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423 - Chemistry of inorganic compounds

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Class / Patent application numberDescriptionNumber of patent applications / Date published
423352000 Ammonia or ammonium hydroxide 80
423385000 Oxygen containing 51
423406000 Binary compound 46
423364000 Carbon containing 38
423413000 Hydrogen containing (e.g., amide, imide, etc.) 9
20080226532LIGHT METAL BASED MATERIAL SYSTEM FOR HYDROGEN STORAGE - The invention provides methods, compositions, and systems for a reversible hydrogen storage material. The hydrogen storage material contains a lithium-magnesium compound, having LiMgN in a dehydrogenated state and a hydrogenated lithium magnesium product in a hydrogenated state, where the hydrogenated and dehydrogenated states are reversible. The lithium-magnesium compound is formed by reacting MgH09-18-2008
20100104493Reactive composite material structures with endothermic reactants - Devices and components that can interact with or modify propagation of electromagnetic waves are provided. The design, fabrication and structures of the devices exploit the properties of reactive composite materials (RCM) and reaction products thereof.04-29-2010
20090202416Separation of Fluids Using Zeolite Itq-32 - The invention relates to a method of separating fluids from mixtures using a zeolite known as ITQ-32 consisting of a two-dimensional pore system comprising channels with openings formed by 8 tetrahedra which are interconnected by channels with openings formed by 12 tetrahedra. The inventive method comprises at least the following steps: a) the zeolite ITQ-32 material is brought into contact with the mixture of fluids, b) one or more of the components are adsorbed in the zeolite ITQ-32 material, c) the non-adsorbed components are extracted, and d) one or more of the components adsorbed in the zeolite ITQ-32 material are recovered.08-13-2009
20120294792ZROX, CE-ZROX, CE-ZR-REOX as Host Matrices for Redox Active Cations for Low Temperature, Hydrothermally Durable and Poison Resistant SCR Catalysts - The present invention relates to application of catalysts for the Selective Catalytic Reduction of oxides of Nitrogen using N-containing reductant. The catalysts are characterised as phase pure lattice oxide materials into which catalytically active cations are incorporated at high levels of dispersion such that conventional analysis reveals a highly phase pure material. The materials are further characterised by high activity, hydrothermal durability and poison tolerance in the intended application.11-22-2012
20100322840METHOD OF PRODUCING A LAYER BY ARC-EVAPORATION FROM CERAMIC CATHODES - A method of producing hard wear resistant layer with improved wear resistance. The method is a reactive arc-evaporation based process using a cathode including as main constituent at least one phase of a refractory compound M12-23-2010
20110206593PROCESSES AND USES OF DISSOCIATING MOLECULES - A process has been developed to selectively dissociate target molecules into component products compositionally distinct from the target molecule, wherein the bonds of the target molecule do not reform because the components are no longer reactive with each other. Dissociation is affected by treating the target molecule with light at a frequency and intensity, alone or in combination with a catalyst in an amount effective to selectively break bonds within the target molecule. Dissociation does not result in re-association into the target molecule by the reverse process, and does not produce component products which have a change in oxidation number or state incorporated oxygen or other additives because the process does not proceed via a typical reduction-oxidation mechanism. Target molecules include ammonia for waste reclamation and treatment, PCB remediation, and targeted drug delivery.08-25-2011
20100239485METHOD OF MANUFACTURING FLUORINATED GAS COMPOUNDS AND APPARATUS FOR MANUFACTURING THE SAME - An apparatus of generating fluorinated gas compounds by means of reacting liquid stock with gaseous material is characterized by providing a circulating system comprised of a reaction chamber where a liquid mixture containing the liquid stock reacts with the gaseous material, a fluid conduit through which the liquid mixture alone flows, an upper fluid channel through which the reacted liquid mixture moves from the top of the reaction chamber to the top of the fluid conduit, and a lower fluid channel through which the liquid mixture moves from the bottom of the fluid conduit to the bottom of the reaction chamber, and sparging into the bottom of the reaction chamber (A) the virgin gaseous material and (B) at least one selected from the fluorinated gas compounds resulted from the reaction in the reaction chamber, including the first fluorinated gas product generated in the first cycle of the reaction and the second or later gas product resulted from further fluorinating the first or later gas product in the succeeding cycle, so as to circulate the liquid mixture.09-23-2010
20090068083PROCESS FOR SYNTHESIS OF HALOGENATED NITROGEN - A process for synthesizing a halogenated nitrogen represented by a formula of NF03-12-2009
20110150742CATALYSTS FOR NOX REDUCTION EMPLOYING H2 AND A METHOD OF REDUCING NOX - Disclosed is a catalyst composition for reducing NOx through two steps including reacting NOx with H2 thus producing ammonia which is then reacted with NOx, instead of direct NOx reduction by H2, and a method of reducing NOx using the catalyst composition.06-23-2011
20100329960COMPOSITION FOR GENERATING NITROGENOUS GAS AND INCLUDING AZODICARBONAMIDE, AND METHOD FOR GENERATING NITROGEN GAS BY DECOMPOSITION OF SAID COMPOSITION - A subject matter of the present invention is compositions which generate nitrogenous gas, with a low decomposition temperature, and processes for the generation of nitrogenous gas comprising the decomposition of such compositions. Said compositions comprise: 12-30-2010
20120063986NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.03-15-2012
20120128569DESTRUCTION OF AMMONIUM IONS - The invention relates to a process for converting ammonium formed in a hydroxylamine phosphate oxime process into molecular nitrogen in an ammonium destruction zone, comprising—preparing a vapour stream comprising nitrogen oxide from ammonia, in an ammonia combustion zone;—bringing into contact by feeding to the ammonium destruction zone, individually and/or as pre-mixed combinations, at least part of said vapour stream, and a first liquid stream, comprising ammonium formed in the hydroxylamine phosphate oxime process, and a second liquid stream, comprising at least one acid selected from nitric acid and nitrous acid in a total nitric+nitrous acid concentration of at least 30 wt. %, thereby forming in the ammonium destruction zone a fluid mixture; and—reacting ammonium ions in the fluid mixture with nitrogen oxide under formation of molecular nitrogen, in the ammonium destruction zone. The invention further relates to an installation for converting ammonium formed in a hydroxylamine phosphate oxime process.05-24-2012
20120251428CRYSTAL GROWING APPARATUS, METHOD FOR MANUFACTURING NITRIDE COMPOUND SEMICONDUCTOR CRYSTAL, AND NITRIDE COMPOUND SEMICONDUCTOR CRYSTAL - Disclosed is a crystal growing apparatus, which is useful when growing a nitride semiconductor crystal by means of hydride vapor phase deposition, and which is capable of effectively preventing a reaction tube from breaking, and is capable of growing the high quality nitride semiconductor single crystal. Also disclosed are a method for manufacturing the nitride compound semiconductor crystal using such crystal growing apparatus, and the nitride compound semiconductor crystal. In the horizontal-type crystal growing apparatus for growing the nitride compound semiconductor crystal on a base substrate using the hydride vapor phase deposition, between the reaction tube (10-04-2012
20080299028CATALYST AND PROCESS FOR THE CONVERSION OF NITROUS OXIDE - A catalyst composition and a process for using it to decompose nitrous oxide into nitrogen and oxygen are disclosed. The catalyst composition has surface area of about 1 to about 200 m12-04-2008
20110027161Device and Method for Producing Carbon Dioxide, Nitride and/or Sulfur Dioxide from a Sample - The invention relates to a device for producing CO02-03-2011
20080233039Catalysts For Co Oxidation,Voc Combustion And Nox Reduction And Methods Of Making And Using The Same - The present invention is directed to carbon monoxide oxidation reactions in the presence of an O09-25-2008
20100284888FORMULATION FOR GENERATING NITROGEN GAS - The invention is directed to a solid, porous material, suitable for generating nitrogen gas, said material having a porosity of 20 to 75 vol. %, and a composition comprising, based on the weight of the material of 60 to 90 wt. % of sodium azide, 0.1 to 20 wt. % of an inert chemical coolant based on at least one inorganic salt having a heat capacity of at least 1400 J/K/kg, 0.1 to 20 wt. % of modifying agent selected from metal oxides and metal carbonates, and a binder, selected from the group consisting of at least one alkali metal silicate, preferably waterglass, or a poly-tetrazole, in an amount of between 3 and 15 wt. %.11-11-2010
20120020866METHOD OF PROCESSING LIQUID CHLORINE CONTAINING NITROGEN TRICHLORIDE - A method of processing a stream of liquid chlorine containing nitrogen trichloride from a chloralkali plant. The liquid stream is received into a vaporizer in which it is evaporated 1O1 chlorine gas and nitrogen trichloride gas. The gas stream is processed by destroying the nitrogen trichloride gas, for example in a superheater or a catalytic bed. The processed gas stream is recycled to the chlorine production train of the chloralkali plant. The process avoids the use of organic solvents to decompose the nitrogen trichloride and the creation of a waste stream requiring further handling.01-26-2012