Class / Patent application number | Description | Number of patent applications / Date published |
420550000 | Iron, cobalt, or nickel containing | 8 |
20080253925 | TARGET MATERIAL FOR ELECTRODE FILM, METHODS OF MANUFACTURING THE TARGET MATERIAL AND ELECTRODE FILM - Provided are a target material for manufacturing an electrode film of a semiconductor device, methods of manufacturing the target material and manufacturing the electrode film. The target material comprises Al-RE alloy or Al—Ni-RE alloy, in which RE is a mixture of rare earth elements comprising La, Ce, Pr, and Nd. | 10-16-2008 |
20110158845 | Al-Ni ALLOY WIRING ELECTRODE MATERIAL - To provide an Al—Ni alloy wiring electrode material, which has flexibility suitable for organic EL, can be directly bonded to a transparent electrode layer of ITO or the like, and is excellent in corrosion resistance against developers. An Al—Ni alloy wiring electrode material containing aluminum, nickel and boron, wherein the material contains a total of 0.35 at % to 1.2 at % of nickel and boron with the balance being aluminum. It is also preferred that the Al—Ni alloy wiring electrode material contain 0.3 at % to 0.7 at % of nickel and 0.05 at % to 0.5 at % of boron. | 06-30-2011 |
20120328472 | FORGING OF GLASSY ALUMINUM-BASED ALLOYS - A forged devitrified aluminum alloy of forging devitrified aluminum alloys having a desired shape. The alloy is forged in a plane strain forging die with the axis of extrusion being parallel to the direction of forging. The alloy is then forged in a product forming forging die having a desired shape such that the original axis of extrusion is aligned with the axis of the forging die resulting in the desired shape | 12-27-2012 |
20140170018 | ALUMINUM ALLOY INCLUDING IRON-MANGANESE COMPLETE SOLID SOLUTION AND METHOD OF MANUFACTURING THE SAME - Provided are an aluminum alloy including an iron-manganese complete solid solution and a method of manufacturing the same. According to an embodiment of the present invention, iron-manganese alloy powder is provided. The iron-manganese alloy powder is introduced into an aluminum melt. An aluminum alloy including an iron-manganese complete solid solution is manufactured by die casting the aluminum melt. | 06-19-2014 |
420551000 | Titanium, zirconium, hafnium, vanadium, noobium or tantalum containing | 4 |
20090022622 | Ternary aluminum alloy films and targets for manufacturing flat panel displays - A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element is selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf. | 01-22-2009 |
20120308430 | SEALING RING AND PREPARATION METHOD THEREOF - The present invention provides a sealing ring and a preparation method thereof. The sealing ring, based on percent by weight, includes 80%-85% of aluminum, 10%-15% of titanium, 0.1%-1% of scrap iron, and 4%-4.9% of potassium fluoroaluminate. Moreover, the present invention provides a method for preparing sealing ring, which includes the following steps: Step A: melting the aluminum in a medium-frequency induction furnace, adding the potassium fluoroaluminate to the medium-frequency induction furnace after melting the aluminum, melting and stirring the mixture evenly; Step B: adding titanium scrap or sponge titanium, and scrap iron to the mixture successively, melting and mixing the mixture totally at 800° C. to 1200° C., standing the mixture after stirring evenly; Step C: removing scum on the surface; Step D: casting into a mould to obtain a final sealing ring. | 12-06-2012 |
20120321507 | ALUMINUM ALLOY CONDUCTOR - An aluminum alloy conductor, containing: 0.4 to 0.9 mass % of Fe, with the balance being Al and inevitable impurities, | 12-20-2012 |
20140086791 | AL ALLOY FILM FOR DISPLAY OR SEMICONDUCTOR DEVICE, DISPLAY OR SEMICONDUCTOR DEVICE HAVING AL ALLOY FILM, AND SPUTTERING TARGET - Provided is an Al alloy film for display devices, which has excellent heat resistance under high temperatures, low electric resistance (wiring resistance), and excellent corrosion resistance under alkaline environments. The present invention relates to an Al alloy film containing Ge (0.01-2.0 at. %) and a group X element (Ta, Ti, Zr, Hf, W, Cr, Nb, Mo, Ir, Pt, Re, and/or Os), wherein, with regard to precipitates each containing Al, the group X element and Ge generated when a heat treatment at 450 to 600° C. is carried out, the density of some of the precipitates which have equivalent circle diameters of 50 nm or more is controlled. | 03-27-2014 |