Class / Patent application number | Description | Number of patent applications / Date published |
420427000 | TANTALUM BASE | 7 |
20080267809 | Tantalum Based Alloy That Is Resistant to Aqueous Corrosion - A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Jr, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy. | 10-30-2008 |
20090214378 | METHOD FOR THE PRODUCTION OF VALVE METAL POWDERS - The present invention relates to a process for the deoxidation of valve metal primary powders by means of reducing metals and/or metal hydrides, and a process for the production of tantalum powders that are suitable as anode material for electrolytic capacitors. | 08-27-2009 |
20090285714 | Implantable medical Devices Composed of a Radiopaque Alloy and Method of Making the Alloy - Implantable medical devices made from a single beta phase Tantalum alloy utilizing Titanium as an alloying agent that are biocompatible, radiopaque and visible under x-ray and fluoroscopy, the alloy having mechanical properties that allow it to be machined by conventional, machining methods for forming the devices, and a method for making the alloy. The alloy is between approximately 10 percent and 25 percent Ti by weight and preferably has a density of 12 g/cm | 11-19-2009 |
20100158747 | Fine Particle Recovery Methods For Valve Metal Powders - A process and system for producing tantalum or other valve metal particles is provided comprising forming tantalum particles in a reduction process carried out in a reactor vessel, and using a siphon to transfer fine tantalum particles out of the reaction mixture to a recovery vessel. This particle transfer can occur while the reaction mixture is agitated. The tantalum particles can be automatically withdrawn when the reaction mixture has a depth level greater than the fluid level of the tantalum fine particle recovery vessel, and outflow automatically stops when the fluid levels of the reactor and particle recovery vessel equilibrate. Tantalum or other valve metal powders made by the processes, and capacitors made with valve metal powders are also provided. | 06-24-2010 |
20110116965 | REDUCTION METHOD - Processes comprising: melting a mixture comprising a valve metal precursor and a diluting agent in at least one first vessel under a first set of temperature and residence time conditions; transferring the mixture to at least one second vessel; and initiating, in the at least one second vessel, a reaction of the valve metal precursor to form a valve metal under a second set of temperature and residence time conditions; valve metal powder prepared thereby and uses therefor. | 05-19-2011 |
20150064056 | TANTALUM SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND BARRIER FILM FOR SEMICONDUCTOR WIRING FORMED BY USING TARGET - Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 μm or more and 200 μm or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance). | 03-05-2015 |
20150329959 | TANTALUM SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. By controlling the crystal grain size of the target, or the crystal grain size and the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed. | 11-19-2015 |