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Electro-optic

Subclass of:

385 - Optical waveguides

385001000 - TEMPORAL OPTICAL MODULATION WITHIN AN OPTICAL WAVEGUIDE

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Class / Patent application numberDescriptionNumber of patent applications / Date published
385003000 Phase modulation type 125
Entries
DocumentTitleDate
20110176762OPTICAL MODULATOR AND OPTICAL MODULATOR FABRICATION METHOD - An optical modulator is formed with at least a portion of a semiconductor layer (07-21-2011
20130028551TUNABLE RF FILTER DEVICE USING OPTICAL WAVEGUIDES WITH DISPERSION SLOPES OF OPPOSITE SIGNS AND RELATED METHODS - A tunable Radio Frequency (RF) filter device includes a tunable optical source configured to generate an optical carrier signal, and a modulator coupled to the tunable optical source and configured to modulate the optical carrier signal with an RF input signal. The tunable RF filter device may also include first and second optical waveguides coupled to the modulator and having first and second dispersion slopes of opposite sign, and an optical-to-electrical converter coupled to the first and second optical waveguides and configured to generate an RF output signal with a frequency notch therein based upon the tunable optical source.01-31-2013
20090190875Optical Modulator Including Electrically Controlled Ring Resonator - An optical modulator and related methods are described. In accordance with one embodiment, the optical modulator comprises a waveguide for guiding an optical signal, and further comprises a ring resonator disposed in evanescent communication with the waveguide for at least one predetermined wavelength of the optical signal. The optical modulator further comprises a semiconductor pnpn junction structure that is at least partially coextensive with at least a portion of a resonant light path of the ring resonator. The optical modulator is configured such that the semiconductor pnpn junction structure receives an electrical control signal thereacross. The electrical control signal controls a free carrier population in the resonant light path where coextensive with the pnpn junction structure. A resonance condition of the ring resonator at the predetermined wavelength is thereby controlled by the electrical control signal, and the optical signal is thereby modulated according to the electrical control signal.07-30-2009
20090123108SINGLE PHOTON ABSORPTION ALL-OPTICAL MODULATOR IN SILICON - A single-photon absorption all-optical modulator, systems employing the same, and methods of making and using the same. An illustrative example is provided based on silicon semiconductor technology that employs rectangular waveguides. In some embodiments, it is observed that the waveguides operate with an absorption density of less than 1005-14-2009
20100046878LITHIUM NIOBATE MODULATOR HAVING A DOPED SEMICONDUCTOR STRUCTURE FOR THE MITIGATION OF DC BIAS DRIFT - There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.02-25-2010
20130034322OPTICAL WAVEGUIDE AND SEMIFINISHED PRODUCT FOR THE PRODUCTION OF AN OPTICAL WAVEGUIDE HAVING OPTIMIZED DIFFRACTION PROPERTIES - The invention relates to an optical waveguide and a semifinished product for producing an optical waveguide having optimized diffraction properties, comprising a trench structure that has a radius-dependent graded refractive index curve and/or a concentric depressed refractive index profile within a core zone (02-07-2013
20100111465INTRINSICALLY LOW RESISTIVITY HYBRID SOL-GEL POLYMER CLADS AND ELECTRO-OPTIC DEVICES MADE THEREFROM - A low resistivity hybrid organic-inorganic material may include a proportion of charge traps including a trap element indirectly covalently bonded to a donor or acceptor element. The trap element may include tin. The donor or acceptor element may include indium and/or antimony. Bonding includes cross-linking via oxygen bonds and via organic cross-linkers. The material may be formed as a hybrid sol-gel. The material may have optical transmission and refractive index characteristics. The material may be formed as optical cladding proximal to a non-linear optical layer, and may form a portion of a second order nonlinear optical device. The second order nonlinear optical device may include and electro-optic device including an organic chromophore-loaded modulation layer.05-06-2010
20100111463OPTICAL WAVEGUIDE DEVICE AND METHOD FOR SUPPRESSING TEMPERATURE CROSSTALK OF OPTICAL WAVEGUIDE DEVICE - An optical waveguide device includes: a substrate having an electro-optical effect; an optical waveguide section formed on the substrate; and a plurality of modulating electrodes for modulating optical waves propagating in the optical waveguide section. The optical waveguide section branches into two parts in the propagating direction of the optical waves, thus forming the two main optical waveguides, and each of the main optical waveguides branches into two parts in the propagating direction of the optical waves, thus forming the two sub optical waveguides. The two main optical waveguides constitute a main Mach-Zehnder type optical waveguide, and the two sub optical waveguides are incorporated into the main Mach-Zehnder type optical waveguide to constitute a sub Mach-Zehnder type optical waveguide. A heat conduction suppressing zone is defined on a portion of the substrate disposed between two opposite sub Mach-Zehnder type optical waveguides.05-06-2010
20120183252OPTICAL WAVEGUIDE DEVICE - Provided is a small optical waveguide device with little reflected light, the optical waveguide device including: an optical waveguide element of which a first output waveguide is inclined with respect to an output end face and a second output waveguide is inclined with respect to both the first output waveguide and the output end face; and a lens that allows beams respectively output from the first and second output waveguides to be parallel to each other.07-19-2012
20120183251SEMICONDUCTOR ON INSULANT HIGH-RATE COMPACT OPTICAL MODULATOR - A component, device and improved electro-optical modulation system for increasing compactness, favouring the adaptation of optical and electrical waves, and a method of fabrication. Such a component exhibits a waveguide architecture devised so that the length of the path followed by the luminous flux exhibits, with the length of the path traversed by the electrical control signal, a determined difference for decreasing or compensating for the difference in the speeds of propagation of the luminous flux and of the electrical signal. In particular, the modulation zone includes a path of the luminous flux winding around itself and successively crossing at least two indentations emanating from at least two of these control elements. It thus exhibits a length greater than that traversed by the electrical signal, for example between a first and a second region of interaction between this control signal and this luminous flux.07-19-2012
20120183250COMPOSITE SUBWAVELENGTH-STRUCTURED WAVEGUIDE IN OPTICAL SYSTEMS - A waveguide cores consisting of a subwavelength grating permits transmission of light without diffraction in a discontinuous manner, wherein the energy is provided by field hopping between subwavelength material segments of higher index. The use of alternating segments permits design of waveguides having desired effective index, mode confinement factor, birefringence, polarization mode or mode dispersions, polarization dependent loss, thermal sensitivity, or nonlinear optical coefficient. An optical system comprises a waveguide having such a core, clad on at least one side, extending between two ends, and wavelength-limiting optical components in optical communication with the ends.07-19-2012
20120183249SEMICONDUCTOR OPTICAL MODULATOR AND SEMICONDUCTOR MACH-ZEHNDER OPTICAL MODULATOR - Provided are a semiconductor optical modulator and a semiconductor Mach-Zehnder optical modulator of high efficiency and high reliability.07-19-2012
20090154867OPTICAL MODULATORS - An object of the present invention is, in an optical modulator, to increase the production yield by enhancing the patterning accuracy of the electrodes, as well as to reduce the electrode loss by increasing the thickness of the electrodes. An optical modulator has a substrate 06-18-2009
20090154866OPTICAL MODULATORS - An object of the present invention is to widen the band of the velocity matching frequency as well as to reduce the electrode loss in the modulation electrode. An optical modulator has a substrate made of an electro-optical material, a signal electrode 06-18-2009
20100040321MACH-ZEHNDER TYPE OPTICAL MODULATOR - A Mach-Zehnder type optical modulator includes an optical waveguide formed in an electro-optical substrate, an input section that inputs light to the optical waveguide, a plurality of branch modulation sections that generate branched input light, extend from the input section and modulate the branched input light, an interference photocoupler including a plurality of input ports and a plurality of output ports, the input ports being coupled to the branch modulation sections, and an output photocoupler including a plurality of input ports coupled to the output ports of the interference photocoupler and also including a plurality of output ports.02-18-2010
20130028552TUNABLE RF FILTER DEVICE USING OPTICAL WAVEGUIDE PATHS WITH SPLITTER AND COMBINER PAIRS AND RELATED METHODS - A tunable Radio Frequency (RF) filter device includes a tunable optical source generating an optical carrier signal, and a modulator coupled to the tunable optical source and modulating the optical carrier signal with an RF input signal. The tunable RF filter device may include first and second optical waveguide paths coupled to the modulator and having first and second dispersion slopes of opposite sign from each other, one or more of the first and second optical waveguide paths comprising an optical splitter and combiner pair therein, and an optical-to-electrical converter coupled to the first and second optical waveguide paths and generating an RF output signal with a frequency notch therein based upon the tunable optical source.01-31-2013
20130044973OPTICAL SEMICONDUCTOR ELEMENT - An apparatus includes an optical semiconductor element comprising: a waveguide into which input light is input; a plurality of ring modulators that have different optical perimeter lengths and are optically coupled to the waveguide; and a control unit configured to selectively apply a modulation signal to at least one of the plurality of ring modulators having a resonant wavelength that is the same as a wavelength of the input light.02-21-2013
20130084036Optical Waveguide Device and Method of Manufacturing the Same - An optical waveguide device using a thin substrate having an electro-optical effect and having a thickness of 10 μm or less, in which, even when the thin substrate is adhered to a supporting substrate, breakage of the thin substrate or supporting substrate is suppressed, and performance deterioration such as optical loss due to fine cracks is also suppressed. The optical waveguide device includes a thin substrate, which has an electro-optical effect and a thickness of 10 μm or less, and in which an optical waveguide is formed, and a supporting substrate that is adhered to the thin substrate through an adhesion layer. A structure is formed in a thin-substrate side surface of the supporting substrate, and the supporting substrate is annealed at a high temperature that is equal to or lower than the Curie temperature after forming the concavo-convex structure and before being adhered to the thin substrate.04-04-2013
20130071058Optical Modulator and Method for Manufacturing the Same - An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib.03-21-2013
20110013863OPTICAL WAVEGUIDE ELEMENT MODULE - Disclosed is an optical waveguide element module in which a filter circuit including a capacitor is provided on a line through which a modulation signal is input to a modulating electrode of an optical waveguide element and which is capable of preventing the deterioration of an electric signal in the filter circuit or the occurrence of a resonance phenomenon within the frequency range used and obtaining flat electrical/optical response frequency characteristics in a wide band of more than several tens of gigahertz, even though a single-layer capacitor is used as the capacitor.01-20-2011
20090269000Photonic Systems And Methods For Encoding Data In Carrier Electromagnetic Waves - Various embodiments of the present invention are related to photonic systems and methods that can be used to encode data in carrier electromagnetic waves. In one embodiment of the present invention, a method for encoding data in carrier electromagnetic waves is provided. The method comprises: transmitting a number of carrier electromagnetic waves in a first waveguide; coupling one or more of the carrier electromagnetic waves into a resonant cavity of a photonic crystal coupled to the first waveguide; modulating the one or more carrier electromagnetic waves within the resonant cavity in order to generate data encoded electromagnetic waves; and coupling the data encoded electromagnetic waves into a second waveguide.10-29-2009
20090268999LOW LOSS OPTICAL POLYMER AND DEVICES MADE THEREFROM - A electro-optic composite comprising a polymer having the structure10-29-2009
20130064492OPTICAL WAVEGUIDE DEVICE - An optical waveguide device having a Mach-Zehnder type waveguide formed on a substrate is provided in which a slope of two waveguides input to an optical coupler on an output side of the Mach-Zehnder type waveguide is 0 degrees, a waveguide of the optical coupler after being coupled by the optical coupler is a multi-mode waveguide, and the waveguide which is output from the optical coupler is a three-branched waveguide including an output main waveguide and two output sub waveguides interposing the output main waveguide therebetween.03-14-2013
20130064491OPTICAL MODULATOR - To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (03-14-2013
20090238512Optical device - According to an aspect of an embodiment, an optical device comprising: a first modulator for independently modulating first light having a first predetermined polarization mode; a second modulator for independently modulating second light having a second predetermined polarization mode; and a polarization beam coupler having a first port, a second port, a third port, and a fourth port; the polarization beam coupler for inputting the first light from the first modulator via the first port, inputting the second light from the second modulator via the second port, outputting the first light via the third port and inputting reflected and polarization converted light on the first light by a wave plate and a mirror, and outputting the first light having the converted polarization mode and the second light having the predetermined polarization mode via the fourth port.09-24-2009
20090238510OPTICAL AMPLITUDE MODULATION SYSTEM CAPABLE OF CANCELLING HIGH ORDER COMPONENT - It is an object of the present invention to provide a DSB-SC system capable of suppressing a third order component. The DSB-SC modulation having high extinction ratio can be realized by adjusting the first order component, which is generated by applying a modulation signal (09-24-2009
20090238511Nanoparticle-based Quantum Confined Stark Effect Modulator - An optical modulator includes a first layer that is transparent or semitransparent over a range of optical wavelengths; a modulation layer made from nanoparticles embedded in a matrix; a first electrode and a second electrode that create an electrical field that passes through the modulation layer. A method for forming a nanoparticle modulator includes obtaining and preparing a substrate; forming sub-layers on the substrate; forming a nanoparticle modulator layer, where the nanoparticle modulator layer is an electrical insulator and has a thickness of less than the wavelength of light the nanoparticle QCSE modulator is designed to modulate.09-24-2009
20090232439OPTICAL MODULATORS - An optical modulator having an optical modulation part and a connection part for an optical fiber propagating light. The optical modulation part has a modulation substrate of an electro-optic material, a modulation optical waveguide formed on the modulation substrate, a high frequency interaction part for applying a voltage to the modulation optical waveguide to modulate the propagation of light, a first supporting substrate and a first adhesion layer for adhering the modulation substrate to the first supporting substrate. The connection part has a connection substrate of an electro-optic material, a connection optical waveguide formed on the connection substrate, a second supporting substrate, and a second adhesion layer for adhering the connection substrate to the second supporting substrate. The modulation substrate is adhered to the connection substrate. The first supporting substrate is adhered to the second supporting substrate. The modulation optical waveguide is connected to the connection optical waveguide.09-17-2009
20090010587ELECTRO-OPTICAL MODULATOR WITH CURVING RESONANTOR - An electro-optical modulator includes a structural substrate, having an insulating layer on top. A waveguide layer, disposed on the insulating layer. A curving resonant MOS device, disposed on the insulating layer and having an optical coupling region with the waveguide layer.01-08-2009
20100086252Optical waveguide device - An optical waveguide device includes: a substrate having an electro-optical effect; an optical waveguide formed on the substrate; and a control electrode for applying an electric field to the optical waveguide. The optical waveguide device has the following characteristics. A thickness of the substrate is 30 μm or less. The control electrode has a signal electrode and a ground electrode. A low-permittivity layer is formed at least on a surface portion of the signal electrode in contact with the substrate.04-08-2010
20110019956OPTICAL DEVICE - There is provided an optical device including a substrate having an electro-optical effect, a plurality of optical modulators including bias electrodes to which a bias voltage is applied so as to generate an electric field from one of the bias electrodes to another of the bias electrodes, and the bias electrodes of the optical modulators being disposed above the substrate, and a partition conductor to reduce influence of the electric field from the bias electrode of a first optical modulator to an optical waveguide of a second optical modulator, the partition conductor being disposed above the substrate.01-27-2011
20120237155SCALABLE SILICON PHOTONIC MULTIPLEXERS AND DEMULTIPLEXERS - An optical multiplexer/demultiplexer is described. In this optical multiplexer/demultiplexer, multiple coupled-waveguide grating devices are optically coupled to a bus optical waveguide. A given coupled-waveguide grating device has a band-pass filter characteristic that encompasses multiple optical channels, thereby providing coarse optical filtering. Moreover, the optical multiplexer/demultiplexer includes multiple add/drop filters (such as ring resonators) that optically couple to the coupled-waveguide grating devices. A given add/drop filter has a filter bandwidth corresponding to a given optical channel, thereby providing fine optical filtering. Furthermore, the band-pass filter characteristic of the given coupled-waveguide grating device is approximately equal to or less than a free spectral range (FSR) of the given add/drop filter.09-20-2012
20100266233CONTROLLABLE OPTICAL RING RESONATOR HAVING PERIODICALLY SPACED CONTROL ELECTRODES - A controllable optical ring resonator, a photonic system and a method of controlling an optical ring resonator employ control electrodes periodically spaced apart along a closed loop optical path of an optical waveguide. The controllable optical ring resonator includes the optical waveguide and a plurality of the periodically spaced control electrodes. The photonic system includes an input optical waveguide segment and the controllable optical ring resonator adjacent and optically coupled to the segment. The method includes providing the plurality of periodically spaced control electrodes, providing an optical signal within the optical path, and addressing one or more of the control electrodes to interact with the optical signal within the optical path.10-21-2010
20100002978PHOTOELECTRIC DEVICE USING PN DIODE AND SILICON INTEGRATED CIRCUIT (IC) INCLUDING THE PHOTOELECTRIC DEVICE - Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.01-07-2010
20080298737Integrated Resistor Fabrication Method and Optical Devices Therefrom - In one aspect, a process comprises: a) fabricating polymer layers embedding an electro-optic polymer waveguide; b) fabricating a high speed electrode and a ground electrode, wherein the high speed electrode and ground electrode are positioned to control the electro-optic polymer waveguide; and c) fabricating a resistor at a predetermined location along the high speed electrode.12-04-2008
20120087615Optical waveguide element - An object of present invention is to provide an optical waveguide element that suppresses damage to an optical waveguide element by a pyroelectric effect due to a reinforcement substrate.04-12-2012
20100150494MONOLITHIC OPTOELECTRONIC TWE-COMPONENT STRUCTURE FOR HIGH FREQUENCIES AND LOW OPTICAL INSERTION LOSS - A monolithic optoelectronic device has a spot-size converter optically connected to a waveguide. The overclad extending over the core of the waveguide is thinner and more highly doped that the overclad of the spot-size converter. This structure can be made by applying a process of selective etching and enhanced regrowth to create selective regions of the overclad of different thickness or doping.06-17-2010
20100034496OPTICAL CONTROL DEVICE - A light control element is provided with a thin board having electro-optical effects; an optical waveguide formed on the thin board; and a control electrode for controlling light that passes through the optical waveguide. The light control element performs speed matching between a microwave signal applied to the control electrode and the light, impedance matching of the microwaves, reduction of a driving voltage and high speed operation. In the control electrode of the light control element, a signal electrode and a grounding electrode are arranged on an upper side of the thin board, and on a lower side of the thin board, a second electrode including the grounding electrode is arranged, through a low refractive index layer entirely formed in the length direction of the signal electrode, with a width wider than that of the signal electrode.02-11-2010
20120189239OPTICAL MODULATOR AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.07-26-2012
20100266234Optical control device - The present invention relates to an optical control device capable of achieving an accurate match of modulation timing and modulation intensity between optical waves propagating through optical waveguides disposed between a plurality of signal electrodes in an optical control device using an anisotropic dielectric substrate.10-21-2010
20080260320Optoelectric High Frequency Modulator Integrated on Silicon - An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by means of carrier desertion.10-23-2008
20110311178OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR - The components are a lower clad layer (12-22-2011
20090087132Electro-photonic modulators - Various embodiments of the present invention are directed to modulators that can be operated electronically and used to modulate electromagnetic radiation. In one embodiment of the present invention, a modulator comprises a slot waveguide having a top semiconductor layer, a bottom semiconductor layer, and a transmission layer sandwiched between the top semiconductor layer and the bottom semiconductor layer. The slot waveguide also includes a plurality of holes forming a Bragg grating along the length of the slot waveguide.04-02-2009
20120294564SILICON ACOUSTO-OPTIC MODULATOR STRUCTURE AND METHOD - An electro-optic structure, which may comprise an acousto-optic modulator for use in an opto-acoustic oscillator, comprises a plurality of rigidly connected resonator core components located movably separated over a substrate and anchored to the substrate at an anchor point. An actuator electrode is located separated from a first one of the rigidly connected resonator core components and an optical waveguide is located separated from a second one of the rigidly connected resonator core components. Radio frequency and direct current actuation of the actuator electrode provides a mechanical vibration in the first rigidly connected resonator core component that is mechanically coupled to the second rigidly connected resonator core component which serves to optically modulate light transported through the wave guide. Reverse operation is also contemplated. Embodiments also contemplate a third rigidly connected resonator core component as a radiation pressure driven detector. Further contemplated is a related fabrication method and a related operation method.11-22-2012
20090257703Optical Device With A Graded Bandgap Structure And Methods Of Making And Using The Same - An optical device includes at least two materials forming a structure with a graded bandgap where photocarriers are generated. A first of the at least two materials has a larger concentration at opposed ends of the graded bandgap structure than a concentration of the first of the at least two materials at an interior region of the graded bandgap structure. The second of the at least two materials has a larger concentration at the interior region of the graded bandgap structure than the concentration of the second of the at least two materials at the opposed ends of the graded bandgap structure.10-15-2009
20100098373Optical XOR logic gate - An all-optical XOR logic gate. In one embodiment, a single photon absorption medium is used to provide enhanced optical response of a gate to an applied optical signal. The apparatus described uses at least two gate inputs and an optical modulation structure such as a Mach-Zehnder interferometer to perform logical XOR operations on an optical input signal using the gate inputs. The result of the XOR operation is provided as information in an optical output signal representative of the result of the XOR operation impressed on the optical input signal.04-22-2010
20100098372ELECTRO-OPTICAL MODULATOR - An optical modulator includes a ring resonator with a waveguide adjacent to and optically coupled to the micro-ring resonator. A p-i-n junction is formed about the ring resonator. An optional additional doped region may be formed opposite the waveguide from the ring resonator and when combined with the p-i-n junction forms a nearly closed p-i-n junction about the ring resonator. The ring resonator may be a silicon micro-ring resonator. Multiple different resonant frequency resonators may be coupled to the waveguide along with different detectors to multiplex light on the waveguide. The spectrum of the resonator may be controlled by an applied voltage. A prepulsing device may be used to enhance electrical transitions to enhance the speed of the modulator.04-22-2010
20110170820EO POLYMER-BASED DUAL SLOT WAVEGUIDE MODULATORS - Electro-optic modulators are disclosed. An electro-optic modulator comprises an electro-optic polymer layer, semiconductor layers, ferroelectric material layers, and electrodes. The semiconductor layers are positioned on each surface of the electro-optic polymer layer. The refractive index of the semiconductor layers in the optical and RF domains is higher than the refractive index of the electro-optic polymer layer in the optical and RF domains. The ferroelectric material layers are positioned on each semiconductor layer opposite the electro-optic polymer layer. The refractive index of the ferroelectric material layers in the RF domain is higher than the refractive indices of both the electro-optic polymer layer and the semiconductor layers in the RF domain. The refractive index of the ferroelectric material layers in the optical domain is lower than the refractive index of the semiconductor layer in the optical domain. The electrodes are positioned on each ferroelectric material layer opposite the semiconductor layer.07-14-2011
20090142014AD CONVERTER USING PHOTONIC CRYSTAL - An AD converter is provided. The AD converter includes a light source unit which provides an optical signal, at least one waveguide unit which consists of a photonic crystal and transmits the optical signal, a modulation unit which applies a RF signal to the at least one waveguide unit, thereby modulating an optical signal output from the at least one waveguide unit, and a digital conversion unit which converts the modulated optical signal to a digital signal. Accordingly, a compact-sized AD convert can be realized.06-04-2009
20090142015OPTICAL MODULATORS - An optical modulator 06-04-2009
20110170819ELECTRO-OPTIC MODULATOR WITH INVERSE TAPERED WAVEGUIDES - An integrated circuit that includes an optical waveguide to convey an optical signal via an optical mode in an on-chip optical waveguide is described. In this integrated circuit, a cross-sectional area of the optical waveguide may be tapered in proximity to an electro-optic modulator in the integrated circuit, such as a germanium electro-optic modulator or a quantum-well (QW) electro-optic modulator. In particular, the cross-sectional area may be tapered from a first diameter distal from the electro-optic modulator to a second diameter proximate to the electro-optic modulator. This so-called ‘inverse taper’ may increase the spatial extent or size of the optical mode, thereby allowing the optical signal to be optically coupled to or from the electro-optic modulator with low optical loss.07-14-2011
20090290829LIGHT CONTROL ELEMENT - In a polarization-independent light control element operable at low voltage, optical waveguides are provided in an X-cut first substrate and control electrodes are disposed thereabove. Optical waveguides are provided in a Z-cut second substrate and control electrodes are disposed thereabove. The control electrodes of the first and second substrates are connected in series to each other in the propagation direction of light. This allows a transverse electric component and a transverse magnetic component to be efficiently controlled because of the incorporation of high electro-optical effects of the optical waveguides of the first substrate on the transverse electric component and high electro-optical effects of the optical waveguides of the second substrate on the transverse magnetic component.11-26-2009
20090297086Light Modulation Device - The present invention is directed to provide a light modulation device capable of not only restricting the faint light propagating in the adhesive layer from being re-incident on the thin substrate but also increasing an adhesive strength of the thin substrate and the supplementing plate. The invention is characterized in a light modulation device having a thin substrate 12-03-2009
20090297087OPTICAL MODULATOR - Herein disclosed is an optical modulator, having: a substrate (12-03-2009
20120294563ELECTRO-OPTIC SILICON MODULATOR - The present invention provides an electro-optic modulator and an optical communication system in which a wider signal electrode may be used without affecting the characteristic impedance of the device or the efficiency of the optical modulation. In embodiments of the invention, asymmetric coplanar electrodes are provided such that the gap between the signal electrode and one reference electrode may be optimized for the optical waveguide and the semiconductor section surrounding it, and the gap between the signal electrode and the other reference electrode may be optimized for a particular characteristic impedance.11-22-2012
20080212914Transparent conducting components and related electro-optic modulator devices - New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.09-04-2008
20100278474DEVICE WITH TUNABLE PLASMON RESONANCE - A device includes a resonator capable of supporting a plasmon mode, a gain structure arranged to couple energy into the resonator, and a memristive layer arranged to provide an interaction with the plasmon mode. An electric signal applied to the memristive layer can change the interaction and change a resonant frequency of the plasmon mode.11-04-2010
20080240644Traveling-Wave-Type Optical Modulator and Method of Adjusting the Same - To provide a traveling-wave-type optical modulator and a method of adjusting the same, in which an occurrence of a jitter can be suppressed when an optical modulator is driven by using a driver, and, in particular, to provide a traveling-wave-type optical modulator and a method of adjusting the same, in which a degree of freedom is improved when combining the driver and the traveling-wave-type optical modulator and an occurrence of the jitter can be effectively suppressed even after combining the driver and the traveling-wave-type optical modulator.10-02-2008
20090034898OPTICAL MODULATOR - Herein disclosed is an optical modulator, comprising: a substrate 02-05-2009
20080267554FIELD DATA DISTRIBUTION SYSTEM WITH FIBER OPTIC CONVERTER - A field data distribution system with a fiber optic converter includes a weatherproof housing with a hinged lid, a panel positioned in the housing and having a plurality of pairs of insulation displacement connector units mounted thereon, and a pair of multi-terminal box connectors on opposite sides thereof. A double pole, single throw switch interconnects each connector unit of a pair to perform testing functions. Auxiliary connectors are interconnected to selected pairs or groups of pairs of the connector units. The connector units and auxiliary connectors enable the connection of communication devices, such as telephone sets, to cables connected to the distribution box, as well as computer modems and network interface adapters. One of the auxiliary connectors is connected to media converter circuitry for converting between an optical data signal interfaced to an optical connector and an electrical data signal interfaced to the auxiliary connector.10-30-2008
20100142879Polarization conversion device and polarization multiplexing modulator - A polarization conversion device converts a polarization state of a light which is input to a first waveguide, that is, TE/TM mode of the light, to output it from the first waveguide. The polarization conversion device includes: a mode converter that performs the inter-conversion of TE/TM modes of the light which is input to the first waveguide; and a polarization separator that receives the light passed through the mode converter and separates the received light into a first light, TE/TM of which mode has been converted by the mode converter and a second light, TE/TM of which mode has not been converted, to output the first light to the first waveguide.06-10-2010
20100142877ELECTRO-OPTIC MODULATOR ON RIB WAVEGUIDE - An electro-optic modulator is formed on a silicon-on-insulator (SOI) rib waveguide. An optical field in the modulator is confined by using an electrically modulated microcavity. The microcavity has reflectors on each side. In one embodiment, a planar Fabry-Perot microcavity is used with deep Si/SiO06-10-2010
20100142878ABSORPTION MODULATOR AND MANUFACTURING METHOD THEREOF - An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.06-10-2010
20110206313Reducing optical loss in an optical modulator using depletion region - An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium includes a slab region and a ridge extending upward from the slab region. The ridge defines a portion of an optical waveguide on the device. A modulator is also positioned on the base. The modulator includes a first doped region of the light-transmitting medium and a second doped region of the light-transmitting medium. The first doped region and the second doped region are configured such that a depletion region forms in the waveguide when an electrical bias is not applied to the modulator. At least a portion of the first doped region is positioned in the ridge and at least a portion of the second doped region is positioned in the slab region. The light-transmitting medium includes a first electrical pathway extending from a first location to the first doped region. The first location is on top of the light-transmitting medium and is spaced apart from the ridge.08-25-2011
20090129719Free-Space Integrated Photodetector With Reduced Phase Tracking Error - A Mach-Zehnder (MZ) interferometer modulator structure for fiberoptic telecommunications is disclosed in which drift of the operating point can be monitored with a reduced phase tracking error. One or more components of free-space light radiated into the substrate of the MZ modulator are selectively detected with one or more photodetectors. Suitable summing circuits are described for nulling out undesired photocurrent contributions in the photodetector(s) from on-state and off-state light radiated from the MZ.05-21-2009
20090129718Light Modulator and Its Fabrication Method - It is an object of the invention to provide a light modulator using a thin plate having a thickness of 20 μm or less and capable of stably holding a conductive film suppressing troubles such as resonance phenomenon of microwaves in a substrate and pyro-electric phenomenon and to provide a method of fabricating the light modulator. The light modulator includes: a thin plate (05-21-2009
20120070111SILICON BASED OPTICAL MODULATORS INCLUDING VERTICAL SLABS AND METHODS OF FORMING - An optical modulator structure can include a core region that comprises an optical transmission path having a refractive index that is modulated via electric charge introduced into the core region. A plurality of first vertical slabs comes into contact with and is spaced along a first side of the core region to provide a first path for the electric charge to/from the core region. A plurality of second vertical slabs come into contact with and is spaced along a second side of the core region, that is opposite to the first side, to provide a second path for the electric charge to/from the core region. Other structures and methods are disclosed.03-22-2012
20090028487Micro-ring optical detector/modulator - A micro-ring configured to selectively detect or modulate optical energy includes at least one annular optical cavity; at least two electrodes disposed about the optical cavity configured to generate an electrical field in the at least one optical cavity; and an optically active layer optically coupled to the at least one optical cavity. A method of manipulating optical energy within a waveguide includes optically coupling at least one annular optical cavity with the waveguide; and selectively controlling an electrical field in the at least one annular optical cavity to modulate optical energy from the waveguide.01-29-2009
20090245714Optical Resonator Tuning Using Piezoelectric Actuation - An optical resonator configured to be tuned using piezoelectric actuation, includes a core, the core being configured to transmit light; a piezoelectric layer; a first electrode and a second electrode. The piezoelectric layer is interposed between the first electrode and the second electrode. A voltage difference across the first and second electrodes alters a geometric dimension of the piezoelectric layer such that physical force is applied to the core and a resonant optical frequency of the resonator is changed. A method of utilizing mechanical stress to tune an optical resonator includes applying physical force to the resonator by subjecting a piezoelectric material to an electric field, the physical force changing a resonant frequency of the resonator.10-01-2009
20090290828Optical Modulator - An optical modulator is provided which suppresses a radiation mode of a microwave generated in a connection substrate or a termination substrate from entering a signal electrode of the optical modulator and suppresses modulation properties from being degraded.11-26-2009
20090052827Silicon-Compatible Surface Plasmon Optical Elements - This invention provides fundamental science and novel device architectures for surface plasmon (SP)-based, complementary metal oxide semiconductor (CMOS)-compatible, optical elements such as modulators, couplers, and switches. The primary focus of the work is on waveguides based on an ultra-long-range surface plasmon (ULRSP) waveguide mode recently discovered by our team. This mode exists at the metal-dielectric interfaces in a silicon-oxide-metal-silicon layer structure. While initial work focuses on noble metals to support the ULRSP, our analysis shows Si processing-compatible metals such as Cu and Al can also be used. Our modeling has also shown that variation in the thickness of the oxide layer can be used to give unprecedented propagation lengths in such structures. Electrically-induced free carrier modulation of the dielectric constant in the Si adjacent to the oxide can modulate the waveguide properties allowing novel Si-compatible electro-optic devices to be created. These waveguides function as the “wiring” in new classes of optical chips. This invention also provides integration of ULRSP waveguides and switches with other optical elements to create entirely new classes of hybrid optoelectronic technologies for defense applications. These range from chip-based chemical agent detection to extremely high performance processors and even all-optical computations.02-26-2009
20090016666SILICON-BASED GE/SIGE OPTICAL INTERCONNECTS - SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si01-15-2009
20130121631DUAL POLARIZATION QUADRATURE MODULATOR - A dual polarization quadrature modulator includes an input planar lightwave circuit (PLC) configured to deliver coherent light to a polymer-on substrate device including a plurality of electro-optic (E-O) polymer optical modulation waveguides configured to each phase modulate the coherent light, and the E-O polymer optical modulation waveguides output modulated coherent light to an output PLC configured to combine waveguide pairs of phase modulated light into Mach-Zehnder interferometric signals, combine pairs of Mach-Zehnder interferometric signals into quadrature modulated signals. A polarization rotator rotates modulated light from one of the quadrature modulated signals into an orthogonal polarization. The output PLC combines the quadrature-modulated and rotated quadrature modulated light to form a dual polarization, quadrature modulated light signal. The PLCs and the polymer-on-substrate device are integrated onto a single assembly substrate.05-16-2013
20110142391Ring resonator with wavelength selectivity - The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector.06-16-2011
20110142390Optical device having modulator employing horizontal electrical field - The optical device includes a waveguide on a base. The device also includes a modulator on the base. The modulator includes an electro-absorption medium configured to receive a light signal from the waveguide. The modulator also includes field sources for generating an electrical field in the electro-absorption medium. The electro-absorption medium is a medium in which the Franz-Keldysh effect occurs in response to the formation of the electrical field in the electro-absorption medium. The field sources are configured so the electrical field is substantially parallel to the base.06-16-2011
20090220184Electro-Optical Modulator Structure - The present invention discloses an ultra-compact optical modulator comprising at least one resonator on a semiconductor chip. The EO modulator modulates incoming light having a certain wavelength range and comprises a waveguide layer accommodating at least one resonator having a periodic complex refraction index distribution structure defining a periodic defect band-edge and a cladding layer; and at least one electrode; the waveguide layer, the cladding layer and the electrode forming a capacitor structure; such that when an external voltage is applied to the capacitor structure the free carrier concentration in the waveguide layer is controlled, enabling a modulation of the resonator's refractive index; wherein the periodic defect band-edge is selected to be within the wavelength range, enabling a slow-light propagation of the incoming light within the waveguide layer.09-03-2009
20090317032Electro-Optical Tunable Filter and Manufacturing Process - An electro-optical filter made of a support in which an optical guide with a diffused channel waveguide and of a cover, that are created in borosilicate glass, and which includes a gap obtained by the use of suitable spacers, filled with a grating constituted of alternating strips of polymer and liquid crystal called POLICRYPS (Polymer Liquid CRYstal Polymer Slices), and with first electrodes that are coplanar to the support and next to the optical guide with a channel, that electrically control the grating making the filter tunable, and a manufacturing process.12-24-2009
20090245715OPTICAL MODULATORS - An optical modulator 10-01-2009
20110103734OPTICAL MODULATION APPARATUS AND OPTICAL MODULATION/INTEGRATION APPARATUS - An optical modulation apparatus includes: a substrate; a first optical waveguide and a second optical waveguide formed at an interval on the substrate; an electrode provided along at least one of the first optical waveguide and the second optical waveguide; and a power source coupled to the electrode to apply a voltage to at least one of the first optical waveguide and the second optical waveguide, wherein at least one of the first optical waveguide and the second optical waveguide includes a diffraction grating region where light having a wavelength λ is reflected, and a phase shift region where a phase of the light is shifted by an amount in a range of 0 to λ/2.05-05-2011
20100215308ELECTROABSORPTION MODULATORS WITH A WEAKLY GUIDED OPTICAL WAVEGUIDE MODE - An electroabsorption modulator comprises an absorption layer, at least one layer of p-doped semiconductor, and at least one layer of n-doped semiconductor, said absorption layer being provided between said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor, and said layers forming a ridge waveguide structure, wherein the thickness of said absorption layer is between 9 and 60 nm, the width of said absorption layer is between 4.5 and 12 microns, and the width of at least one of said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor is between 4.5 and 12 microns; whereby the width of said ridge waveguide structure is between 4.5 and 12 microns.08-26-2010
20110058765DUAL-RING SILICON ELECTRO-OPTIC MODULATOR - A device, system, and method for the electro-optic modulation of light. The device includes a substrate having a first ring waveguide and a second ring waveguide on the surface. The device includes a first p-doped region inside the first ring waveguide and a second p-doped region inside the second ring waveguide. The device includes a first n-doped region interposed between the first ring waveguide and the second ring waveguide, a second n-doped region outside the first ring waveguide, and a third n-doped region out the second ring waveguide. The device includes a first linear waveguide located on the surface adjacent to the first ring waveguide and the second ring waveguide. The device includes a fourth n-doped region on the surface located adjacent to the first linear waveguide. The device includes a control circuit configured to modulate light in the first linear waveguide using a voltage source and electrical connections.03-10-2011
20110058764ELECTRO-OPTIC MODULATING DEVICE - Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.03-10-2011
20100111464ELECTRO-OPTIC DEVICE - The present invention provides an electro-optic device comprising three or more radio-frequency (RF) signal electrodes, which each include an input segment. The input segments of the three or more RF-signal electrodes are arranged in a fractal pattern followed in an RF-signal transit direction by a parallel-bend pattern. Advantageously, this arrangement allows matching of RF-signal transit times of the input segments and near matching of RF-signal losses of the input segments.05-06-2010
20090274408OPTICAL MODULATOR COMPONENT AND OPTICAL MODULATOR - An optical modulator component 11-05-2009
20090245713INTEGRATED TUNABLE OPTICAL EQUALIZER - Provided is an apparatus and method for use thereof. The apparatus, in one embodiment, includes first and second 1×N couplers integrated on a substrate and configured to receive an optical symbol having an intended time slot, N being at least three. The apparatus, in this embodiment, further includes N waveguide arms integrated on the substrate, having modulators and coupled between the first and second 1×N couplers. The apparatus, in this embodiment, additionally, includes a modulator controller configured to drive the modulators such that, following transmission over a distance, components of the optical symbol outside of the intended time slot are attenuated relative to components within the intended time slot.10-01-2009
20090279825OPTICAL FSK/SSB MODULATOR HAVING INTENSITY BALANCE FUNCTION - It is an object of the present invention to provide an optical modulator which is capable of adjusting optical intensity of optical signals which contains non-desired components so that the intensity of the components become at a similar level, whereby the optical modulator is capable of effectively suppressing the non-desired components when the optical signals are combined.11-12-2009
20090148094DISTRIBUTED AMPLIFIER OPTICAL MODULATOR - Various embodiments described herein comprises an optoelectronic device comprising a waveguide structure including a plurality of optical modulator elements each having an optical property that is adjustable upon application of an electrical signal so as to modulate light guided in the waveguide structure. The optoelectronic device also comprises a plurality of amplifiers in distributed fashion. Each amplifier is electrically coupled to one of the optical modulators to apply electrical signals to the optical modulator.06-11-2009
20100296769SEMICONDUCTOR OPTICAL MODULATOR AND OPTICAL MODULATING APPARATUS - A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.11-25-2010
20100296768RING RESONATOR WITH INDUCTANCE COUPLED HEAT TUNING - A ring resonator has a first optical waveguide arranged in a loop, a second optical waveguide tangentially connected to the first optical waveguide, and an electrical coil inductively coupled to the first optical waveguide.11-25-2010
20100310206OPTICAL MODULATOR - A technical problem related to a traveling wave electrode type of optical modulator comprising a substrate having the electro-optical effect, optical waveguides formed in the substrate, and a traveling wave electrode formed above the substrate includes improvement of the characteristics such as optical modulation bandwidth, driving voltage, and characteristic impedance of the traveling wave electrode type of optical modulator. To solve the problem, the structure of ridge portions is optimized which is formed in such a manner that a part of the substrate at regions where electric field generated by a high frequency electric signal traveling through the traveling wave electrode is strong is reduced in thickness by digging. Further, a buffer layer is formed over the substrate where the ridge portions are formed and a conducting layer is formed over the buffer layer. The thickness of at least one part of the buffer layer along the normal line of a side surface of the ridge portions is less than the thickness of the buffer layer on a bottom surface between the ridge portions formed by digging and/or the thickness of the buffer layer on a top part of the ridge portions.12-09-2010
20100310205Hybrid Coupling Structure of the short Range Plasmon Polariton and Conventional Dielectric Waveguide, A Coupling Structure of the Long Range Plasmon Polariton and Conventional Dielectric Waveguide, and Applications Thereof - The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.12-09-2010
20090324156Light control device - To provide a light control device which is possible to realize a velocity matching between a microwave and an optical wave or an impedance matching of the microwaves even though a signal path having a high impedance of 70Ω or more, and is possible to reduce a driving voltage.12-31-2009
20110249933OPTICAL INTERCONNECT SYSTEMS AND METHODS - Optical interconnect systems and methods are disclosed. An optical interconnect system includes a substrate, an optical waveguide, and first and second modulators. The optical waveguide has a first waveguide portion extending to a first coupling structure, a second waveguide portion extending from the first coupling structure to a second coupling structure, and a third waveguide portion extending from the second coupling structure. The first modulator is positioned adjacent the first coupling structure, and the second modulator is positioned adjacent the second coupling structure. The optical interconnect method includes modulating light with a first modulator to produce one-time modulated light, and modulating the one-time modulated light with a second modulator to produce two-time modulated light.10-13-2011
20110081107OPTICAL MODULATOR AND OPTICAL TRANSMITTER - An optical modulator including: a substrate which has electro-optic effect; a Mach-Zehnder optical interferometer which is formed in the substrate and which includes a first waveguide and a second waveguide; a signal electrode which applies an electrical field to the Mach-Zehnder optical interferometer through being supplied with an electric signal corresponding to a signal for optical modulation; a ground electrode formed apart from the signal electrode; and a conductor section which is narrow in a middle thereof along the light propagating direction and which gradually becomes wider towards the starting end and the terminating ends thereof along the light propagating direction in an interacting portion at which the electric field applied by the signal electrode interacts with light propagating through the first waveguide and the second waveguide.04-07-2011
20110069924OPTICAL MODULATOR HAVING MACH-ZENDER ARRANGEMENT AND METHOD TO GENERATE MODULATED OPTICAL SIGNAL USING THE SAME - A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the exciton resonance in the refractive index are connected with a resistor. The driving signal is applied to one of the waveguides, while, the signal is applied to the other waveguide through the resistor where the other waveguide is grounded through a resistor. Adjusting the resistance of two resistors and the amplitude of the applied signal, the Mach-Zender modulator shows a substantial modulation degree with substantially no chirping characteristic.03-24-2011
20110075961ELECTROMAGNETIC RADIATION FREQUENCY OPTIMIZING DEVICE AND METHOD - The invention relates to a device, system, and method for optimizing and altering electromagnetic frequency using Doppler shifts of electromagnetic radiation, and, in particular, optimizing frequency for application to photovoltaic devices and the like. The device comprises a crystal positioned in a channel undergoing a vibration, wherein an interaction between an incoming electromagnetic radiation and the vibration of the crystal optimizes a frequency of electromagnetic radiation. Also, a method comprising providing a channel, at least two parallel walls having an reflective surface; separating an incoming electromagnetic radiation into component frequencies; vibrating at least two parallel walls, wherein parallel walls contain at least one crystal capable of vibration; directing incoming electromagnetic radiation toward at least two parallel walls, wherein contact between incoming electromagnetic radiation and vibration of at least one crystal alters a frequency of electromagnetic radiation toward said optimal frequency.03-31-2011
20110058766Transparent Conducting Components and Related Electro-Optic Modulator Devices - New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.03-10-2011
20100296767OPTICAL MODULATOR - Provided is an optical modulator wherein frequency characteristics in a high frequency band are further improved and temperature drift phenomenon is more suppressed. The optical modulator is provided with a substrate (11-25-2010
20100296766SEMICONDUCTOR OPTICAL MODULATOR - The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (11-25-2010
20090324158Optical modulation device and manufacturing method thereof - An optical modulation device includes: a crystal substrate having an electro-optic effect; an optical waveguide formed in the crystal substrate; an electrode formed on the crystal substrate, to apply an electric field to the optical waveguide; and a buried layer of low dielectric constant buried to avoid the optical waveguide, in at least one portion of a lower region of the electrode inside the crystal substrate, which is spaced from both of a front surface of the crystal substrate on which the electrode is formed and a rear surface thereof opposed to the front surface.12-31-2009
20090324157Optical waveguide device and producing method thereof - An optical waveguide device includes; a substrate having an electro-optic effect, and a first optical waveguide and a second optical waveguide formed substantially in parallel on a top face of the substrate. A groove is formed for cutting only the first optical waveguide, of the first optical waveguide and the second optical waveguide. The groove penetrates from the top face to a bottom face of the substrate. Such a groove can be formed for example by fixing a side face of the substrate on the second optical waveguide side to a supporting base of a dicing machine so that the first optical waveguide is positioned on an upper side and the second optical waveguide is positioned on a lower side, and advancing the dicing saw from the bottom face side to the top face side of the substrate.12-31-2009
20090110342Silicon modulator offset tuning arrangement - A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index04-30-2009
20110164843ENHANCED SILICON ALL-OPTICAL MODULATOR - A single-photon absorption all-optical signal-processing device, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, it is observed that the waveguides have surface state density, σ, of not less than 1.5×1007-07-2011
20110164844OPTICAL MODULATOR - It's an object of the invention to provide an optical modulator with high performance. The optical modulator 07-07-2011
20110026868Optical modulator - An optical modulator suppresses a radiation mode of a microwave generated in a connection substrate or termination substrate from entering a signal electrode of the optical modulator and suppresses modulation properties from being degraded. The optical modulator includes an optical modulation element (02-03-2011
20100329600Optical waveguide device - In an optical waveguide device, in a cross direction intersecting an extension direction of waveguide sections, one or more bridge portions of a ground electrode closer to a center of stress distribution of a stress due to a support member, and one or more bridge portions of a ground electrode farther from the center of stress distribution are formed with different shapes. The structure of the ground electrodes is devised so that a stress negating the difference in stress characteristics between the plurality of waveguide sections, generated by the stress applied from the support member to a substrate, is applied from the ground electrode to the substrate.12-30-2010
20110135241OPTICAL WAVEGUIDE ELEMENT MODULE - Provided is an optical waveguide element module which suppresses reflection of a modulation signal and attenuation of a modulation signal, even when an impedance of a modulation electrode of an optical waveguide element and an impedance of a transmission line for inputting the modulation signal from the external of the optical waveguide element are different from each other. The optical waveguide clement module is provided with an optical waveguide element, which has a substrate (06-09-2011
20110255821Optical Component Having a Waveguide Array Heterostructure - The invention relates to an optical component including an array of coupled waveguides, wherein said waveguide array includes: a first area made of parallel waveguides coupled according to a first coupling coefficient; a second area adjacent to the first area and made of parallel waveguides coupled according to a second coupling coefficient lower than the first coupling coefficient; a third area adjacent to the second area and made of parallel waveguides coupled according to a third coupling coefficient higher than the second coupling coefficient; a fourth area adjacent to the third area and made of parallel waveguides coupled according to a fourth coupling coefficient lower than the third coupling coefficient; and a fifth area adjacent to the fourth area and made of parallel waveguides coupled according to a fifth coupling coefficient higher than the fourth coupling coefficient.10-20-2011
20100111462Ring Light Emitting Diode - An optical apparatus includes an optical resonator ring having at least one active region. The active region is configured to generate optical energy under an electrical stimulus. The optical apparatus also includes a corrugated plasmonic body disposed around at least a portion of the resonator ring and radiatively coupled to the active region.05-06-2010
20100158427OPTICAL AMPLIFIER - An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.06-24-2010
20100067840ELECTRONIC DEVICE - An electronic device in which a signal electrode has a bent portion. Earth electrodes are formed with the signal electrode between. A width of a gap at the bent portion between the signal electrode and each earth electrode is narrower than a width of a gap at both ends of the bent portion between the signal electrode and each earth electrode.03-18-2010
20120207424OPTICAL MODULATOR WITH THREE-DIMENSIONAL WAVEGUIDE TAPERS - An integrated circuit that includes an optical waveguide defined in a semiconductor layer is described. In this integrated circuit, light is coupled between the optical waveguide and an optical modulator, which is disposed on the optical waveguide, using 3-dimensional (3-D) taper structures that are proximate to the ends of the optical modulator. The cross-sectional areas of these 3-D taper structures transition, over a distance, from that of the optical waveguide (distal from the optical modulator) to that of optical modulator (proximate to the ends of the optical modulator). In this way, a spatial extent of an optical mode in the optical waveguide and a spatial extent of the optical mode in the optical modulator may be approximately matched to reduce the optical loss when the light is coupled to or from the optical modulator.08-16-2012
20110188798OPTICALLY POWERED ELECTRO-OPTICAL COMPONENT - An optically powered optical modulator comprises an optical modulation component, such as an electro-optical modulator, acousto-optic modulator or magneto-optic modulator, in combination with one or two lens assemblies positioned at one or both apertures of the optical modulation component, so that the optical modulator formed by the combination of the lens assembly or assemblies and the optical modulation component has optical focus power.08-04-2011
20100027935OPTICAL DEVICE - The optical device includes a substrate having an electrooptic effect; a plurality of optical waveguides formed in the substrate in parallel to one another; and a polarization inversion region which is disposed a part of the substrate and which has a polarization characteristic that is an inverse to that of the substrate, wherein a profile of a boundary between the polarization inversion region and a remaining region in which the polarization is not inverted is configured such that accumulated amounts of distortion that affects the respective waveguides over coordinates along a light propagation direction are substantially identical.02-04-2010
20100027934Traveling wave optical modulator - An object of the invention is to provide a traveling-wave-type optical modulator capable of adjusting the frequency characteristics of an electric/optical conversion response over a wide frequency band, preventing the occurrence of jitter, and improving optical transmission characteristics.02-04-2010
20120308173METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL MODULATOR AND SEMICONDUCTOR OPTICAL MODULATOR - A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer.12-06-2012
20110305413OPTICAL MODULATOR, INTEGRATED OPTICAL CIRCUIT, AND METHOD FOR MODULATING AN OPTICAL SIGNAL - The invention relates to an optical modulator, comprising a first waveguide for a signal to be modulated, a second waveguide for a control signal, and an auxiliary waveguide, wherein the auxiliary waveguide is supported by a carrier which can be deflected to change a distance between the first waveguide and the auxiliary waveguide, wherein the carrier also comprises two layers with different coefficients of thermal expansion and the second waveguide is guided in such a way that a temperature of the carrier at least in a section can be manipulated by light transported by the second waveguide. The invention further relates to an integrated optical circuit comprising such an optical modulator, and to a modulation method which can be performed with such a modulator.12-15-2011
20110305412OPTICAL WAVEGUIDE, OPTICAL MODULATOR AND OPTICAL COUPLER - An optical waveguide formed in a substrate including: a curved waveguide; and a splitter that is coupled to the curved waveguide and branches, wherein a low refraction index portion having an effective refraction index that is lower than that of a start point of the curved waveguide on an opposite side of the splitter is provided in a waveguide extending from the start point of the curved waveguide to the splitter.12-15-2011
20090067770LITHIUM NIOBATE OPTICAL MODULATOR - An optical modulator comprises a Z-cut lithium niobate substrate on which is formed a Mach-Zehnder interferometer having two generally parallel waveguides lying beneath a buffer layer of dielectric material. First and second ground electrodes and a hot electrode are disposed on the buffer layer, the first and second ground electrodes being spaced either side of the hot electrode, the hot electrode and the first ground electrode being proximate to at least apart of the respective waveguides. The electrode structure is unsymmetrical in that (a) the hot electrode and the first ground electrode each have a width substantially less than that of the second ground electrode and or (b) the spacing between the first ground and hot electrodes is different from the spacing between the second ground and hot electrodes. whereby a range of chirp values can be obtained. When the spacing between the first ground and hot electrodes is smaller than the spacing between the second ground and hot electrodes, and preferably the hot and first ground electrodes have a width not exceeding 15 .μm, the modulator is capable of operation at frequencies above 10 GHz, possibly up to around 40 GHz.03-12-2009
20120039560ALL-OPTICAL LOGIC GATES AND METHODS FOR THEIR FABRICATION - The present invention provides optical devices that employ nonlinear optical effects for processing optical signals. For example, such an optical device can include a nano-sized interferometric component that provides an optical output signal via interference of two input signals subsequent to their asymmetric nonlinear phase accumulation. The interferometric element can have a variety of configurations, such as Sagnac, Mach-Zehnder or Michelson configurations.02-16-2012
20120148184SEMICONDUCTOR OPTICAL MODULATOR AND METHOD FOR MANUFACTURING THE SAME - A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.06-14-2012
20120148183Electro-Optic Waveguide Polarisation Modulator And A Method of Modulation - An electro-optic waveguide polarisation modulator includes cladding layers, and a waveguide core sandwiched between the cladding layers, wherein the waveguide core has a higher refractive index than the cladding layers. The modulator further includes primary electrodes arranged on the opposite side of one cladding layer to the core and a secondary electrode arranged on the opposite side of another cladding layer to the core. The electrodes are arranged to provide an electric field having field components in perpendicular directions within the waveguide core so as to modulate the refractive index such that electromagnetic radiation propagating through the core is converted from a first polarisation state to a second polarisation state. The modulator further includes a grading layer sandwiched between the cladding layers and the core, the grading layer having an effective refractive index intermediate between that of the waveguide core and the cladding layer.06-14-2012
20120099812ELECTRO-OPTIC DEVICE - An electro-optic device is disclosed, in which an RF signal electrode is used as a bias ground electrode. Thus, for Z-cut lithium niobate electro-optic crystals, there is no need to place a buried bias electrode under the RF signal electrode and over the optical waveguide. As a result, both optical and the RF wave propagation losses are reduced. In another embodiment, a buried bias electrode is placed over the optical waveguide between two buffer layers having a different electrical conductivity. The buffer layer underneath the buried bias electrode has a larger electrical conductivity than the buffer layer above the buried bias electrode. The buffer layer underneath the buried bias electrode reduces the optical loss penalty due to the buried bias electrode located above the optical waveguide, while the buffer layer above the bias electrode reduces leakage currents.04-26-2012
20110158574OPTICAL HYBRID CIRCUIT, OPTICAL RECEIVER, AND OPTICAL RECEIVING METHOD - An optical hybrid circuit includes a multimode interference coupler; a first 2:2 optical coupler; a second 2:2 optical coupler; a third 2:2 optical coupler; and a phase controlling region. The first 2:2 optical coupler, the second 2:2 optical coupler, and the third 2:2 optical coupler are coupled to one of the pair of first output channels, the pair of second output channels, the pair of third output channels, and the pair of fourth output channels of the multimode interference coupler. The phase controlling region is provided in one or both of each pair of at least two pairs of output channels from among three pairs of output channels to which the first 2:2 optical coupler, the second 2:2 optical coupler, and the third 2:2 optical coupler are coupled, respectively.06-30-2011
20120045164ELECTROMAGNETIC RADIATION FREQUENCY OPTIMIZING DEVICE AND METHOD - The invention relates to a device, system, and method for optimizing and altering electromagnetic frequency using Doppler shifts of electromagnetic radiation, and, in particular, optimizing frequency for application to photovoltaic devices and the like. The device comprises a crystal positioned in a channel undergoing a vibration, wherein an interaction between an incoming electromagnetic radiation and the vibration of the crystal optimizes a frequency of electromagnetic radiation. Also, a method comprising providing a channel, at least two parallel walls having an reflective surface; separating an incoming electromagnetic radiation into component frequencies; vibrating at least two parallel walls, wherein parallel walls contain at least one crystal capable of vibration; directing incoming electromagnetic radiation toward at least two parallel walls, wherein contact between incoming electromagnetic radiation and vibration of at least one crystal alters a frequency of electromagnetic radiation toward said optimal frequency.02-23-2012
20120045163OPTICAL CIRCUIT APPARATUS, METHOD, AND APPLICATION - A new photonic integrated circuit in the form of an optical pulse-train generator utilizes a time-interleaved architecture. The circuit can generate multiple optical pulses sequentially from a single trigger pulse, with the timing and amplitude of each pulse determined by circuit design. The circuit has application in optical arbitrary waveform generation and ultrafast electro-optic modulation.02-23-2012
20120045162Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process - New circuit architecture for electro-optic modulator based on free-carrier dispersion effect is invented, in which the waveguide capacitor of the modulator is embed in the circuits and physically layout together with transistors, the switching of the modulator occurs in transistors, and as the result, the electro-optical modulation occurs in the waveguide capacitor. The invented modulator is not one physical device, it is actually a circuit. Several circuit design techniques are imported, leading to several new modulator circuits that have very high operation speed and very small power consumption. Several new waveguide capacitor structures are also invented that allow high efficient modulator circuits to be built.02-23-2012
20120008895SEMICONDUCTOR OPTICAL DEVICE, OPTICAL TRANSMITTER MODULE, OPTICAL TRANSCEIVER MODULE, AND OPTICAL TRANSMISSION EQUIPMENT - Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.01-12-2012
20090297088INTEGRATED ON-CHIP INDUCTORS AND CAPACITORS FOR IMPROVED PERFORMANCE OF AN OPTICAL MODULATOR - An optical modulator for fiberoptic telecommunications is disclosed in which the optical signal velocity in the modulator waveguide and the electrical signal velocity in the traveling wave signal electrode are purposely mismatched by a factor of up to about 4. On-chip integrated inductors and capacitors are implemented to achieve the velocity mismatch. Improved electro-optic characteristics, such as return loss and sharper cut-off bandwidth are obtained.12-03-2009
20120301070Optical Waveguide Element Module - An optical waveguide element module includes an optical waveguide formed on a substrate, an optical waveguide element having a modulation electrode for modulating an optical wave propagating through the optical waveguide, a connector where an external signal line for inputting a modulation signal into the modulation electrode is connected, and a relay line formed on a relay substrate to connect the connector and the modulation electrode. The relay line is a coplanar-type line, in which a signal electrode is interposed between ground electrodes. The impedance of the relay line changes stepwise or continuously so as to suppress reflection of the modulation signal in the optical waveguide element module. A filter circuit including a capacitor is arranged in the middle of the relay line.11-29-2012
20120301069Electro-Optical Modulator Structure - The present invention discloses an ultra-compact optical modulator comprising at least one resonator on a semiconductor chip. The EO modulator modulates incoming light having a certain wavelength range and comprises a waveguide layer accommodating at least one resonator having a periodic complex refraction index distribution structure defining a periodic defect band-edge and a cladding layer; and at least one electrode; the waveguide layer, the cladding layer and the electrode forming a capacitor structure; such that when an external voltage is applied to the capacitor structure the free carrier concentration in the waveguide layer is controlled, enabling a modulation of the resonator's refractive index; wherein the periodic defect band-edge is selected to be within the wavelength range, enabling a slow-light propagation of the incoming light within the waveguide layer.11-29-2012
20120301068OPTICAL WAVEGUIDE WITH CASCADED MODULATOR CIRCUITS - A silicon optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along a silicon optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.11-29-2012
20110091148Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process - New circuit architecture for electro-optic modulator based on free-carrier dispersion effect is invented, in which the waveguide capacitor of the modulator is embed in the circuits and physically layout together with transistors, the switching of the modulator occurs in transistors, and as the result, the electro-optical modulation occurs in the waveguide capacitor. The invented modulator is not one physical device, it is actually a circuit. Several circuit design techniques are imported, leading to several new modulator circuits that have very high operation speed and very small power consumption. Several new waveguide capacitor structures are also invented that allow high efficient modulator circuits to be built.04-21-2011
20110091147INTEGRATED SEMICONDUCTOR OPTICAL DEVICE - An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary.04-21-2011
20110091146OPTICAL MODULATORS EMPLOYING CHARGE STATE CONTROL OF DEEP LEVELS - A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.04-21-2011
20120207425Optical Waveguide Device - Disclosed is an optical waveguide element wherein a plurality of Mach-Zehnder waveguides to be used for DQPSK modulation and the like are integrated on a thin substrate and the on/off extinction ratio is improved. The optical waveguide element has the thin board, which is formed of a material having electrooptical effects and has a thickness of 08-16-2012
20100247023OPTICAL WAVEGUIDE TYPE MODULATOR - An optical waveguide type modulator with a decreased driving voltage and an improved return loss of a driving signal is provided which includes an optical waveguide having a Mach-Zehnder type optical waveguide portion and a signal electrode and a ground electrode modulating an optical wave guided in the optical waveguide. The signal electrode is arranged along at least one of two branched waveguides and Y-branched portions of the Mach-Zehnder type optical waveguide portion and along a part of one Y-branched portion connected to the one branched waveguide. Outside the part of one Y-branched portion, the signal electrode is drawn across a symmetric axis of the Mach-Zehnder type optical waveguide portion with a gap from the one Y-branched portion, and is drawn so as not to extend along the other Y-branched portion connected to the one branched waveguide and so as not to extend across the symmetric axis with a gap from the one branched waveguide.09-30-2010
20100247024OPTICAL WAVEGUIDE TYPE DEVICE - An optical waveguide type device employing an X-cut substrate having an electro-optical effect is provided in which the modulation efficiency due to an electric field formed by control electrodes is improved. The optical waveguide type device includes: an X-cut substrate having an electro-optical effect; an optical waveguide formed on the substrate; and a control electrode controlling an optical wave propagating in the optical waveguide and including a signal electrode and a ground electrode. Here, the bottom surface of at least one of the signal electrode and the ground electrode disposed to interpose the optical waveguide therebetween is lower (by a height difference d) than the top surface on which the optical waveguide is formed.09-30-2010
20120128289OPTICAL MODULATOR AND OPTICAL MODULATION CONTROL METHOD - An optical modulator includes: a modulator including an optical waveguide provided in a semiconductor substrate having an electro-optical effect and an electrode for applying an electric field depending on a bias voltage and a modulation signal to the optical waveguide; a modulation signal generator to generate the modulation signal of a first frequency; a superimposer to superimpose a signal of a second frequency different from the first frequency on the bias voltage; and a bias controller to control the bias voltage in a modulation direction of the modulator and the bias voltage in an orthogonal direction which is orthogonal to the modulation direction based on a phase of the second frequency component extracted from a modulated optical signal generated by the modulator.05-24-2012
20100209040OPTICAL MODULATOR - In an optical modulator comprising substrate 08-19-2010
20110182543Electrically Driven Optical Frequency Shifter - Disclosed herein is an optical frequency shifter (07-28-2011
20120134618PHOTOVOLTAIC DEVICE WITH FREQUENCY CONVERSION REGION - The present invention provides an organic fibrous photovoltaic device with a frequency conversion region comprising a waveguide being arranged normal to the axis of the fiber.05-31-2012
20120251029OPTICAL WAVEGUIDE STRUCTURE - Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, four-fold, five-fold, etc.).10-04-2012
20100046881OPTICAL CONTROL DEVICE - A light control element is provided with a thin board having electro-optical effects; an optical waveguide formed on the thin board; and a control electrode for controlling light that passes through the optical waveguide. The light control element performs speed matching between a microwave signal applied to the control electrode and the light, impedance matching of the microwaves, reduction of a driving voltage and high speed operation. In the control electrode of the light control element, a signal electrode and a grounding electrode are arranged on an upper side of the thin board, and on a lower side of the thin board, a second electrode including the grounding electrode is arranged. The second electrode is arranged not to exist below the signal electrode, especially for achieving impedance matching.02-25-2010
20100046880OPTICAL CONTROL DEVICE - In a light control element comprising a thin plate having a thickness of 10 [mu]m or less and exhibiting electro optic effect, an optical waveguide formed on the thin plate, and a control electrode for controlling light passing through the optical waveguide, the control electrode includes a first electrode and a second electrode so arranged as to sandwich the thin plate, and the first electrode has a coplanar electrode consisting of a first signal electrode and a ground electrode, while the second electrode has a second signal electrode. Modulation signals having mutually inverted amplitudes are inputted to the first signal electrode of the first electrode and the second signal electrode of the second electrode such that the modulation signals cooperate to apply an electric field to the optical waveguide.02-25-2010
20100046879Optical Modulator - An optical modulator includes an input waveguide, a splitting point, a first interaction arm of length L02-25-2010
20120251030DEVICE FOR COUPLING AN ELECTROMAGNETIC WAVE BETWEEN A WAVEGUIDE AND A SLIT METAL GUIDE, METHOD FOR MANUFACTURING SUCH A DEVICE, AND OPTICAL AND ELECTRIC COUPLER FOR AN OBJECT USING THE OPTICAL COUPLING DEVICE - The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.10-04-2012
20090060409OPTICAL FOCAL PLANE DATA COUPLER - Systems are disclosed that utilize electrical signals from detectors of an imaging focal plane array or antenna elements of an antenna array to modulate optical signals. Antenna or focal plane array elements are coupled to optical waveguides by way of whispering gallery mode resonators made of electro-optic material. The resonators modulate optical signals in the waveguides based on the electrical signals from the detectors/antenna elements. The signals received by the array are converted into the optical domain, allowing subsequent optical processing and/or distribution. Each detector/antenna element involved can be identified by the specific wavelength and waveguide through which its signal is coupled, enabling subsequent optical processing of the signals such as by wavelength division multiplexing systems. Additionally disclosed are imaging sensor photonic systems that include WDM components and other optical components such one or more optical narrow-band amplifiers and/or filters. Related electro-optic modulation and tuning methods are also described.03-05-2009
20090060410STACKED THREE DIMINESIONAL PHOTONIC CRYSTAL, LIGHT EMITTING DEVICE, AND IMAGE DISPLAY APPARATUS - Provided is a light emitting structure which can emit light having a plurality of wavelength distributions from a single light emitting structure, can be integrated at high density, and can control a radiation mode pattern of radiation light and polarization thereof. A stacked three-dimensional photonic crystal is composed of a plurality of three-dimensional photonic crystals having photonic band gaps different from one another, which are stacked. Each of the plurality of three-dimensional photonic crystals includes a resonator in which a point defect is formed.03-05-2009
20080298735Method of biasing and operating electro-optic polymer optical modulators - A method that includes (a) thermally biasing an electro-optic polymer device using an electrode; and (b) driving the electro-optic polymer device by applying a high frequency signal to the device using the same electrode.12-04-2008
20080298736Broadband Electro-Optic Polymer Modulators With Integrated Resistors - In one aspect, an electro-optic device comprises: a) a high speed electrode; b) a ground electrode; c) polymer layers embedding an electro-optic polymer waveguide; and d) at least one integrated resistor in electrical contact with the high speed electrode and the ground electrode, wherein the high speed electrode and the ground electrode are positioned to control light in the electro-optic polymer waveguide.12-04-2008
20110002573OPTICAL ISOLATION CREATED BY INDIRECT INTERBAND PHOTONIC TRANSITIONS - The refractive index of the at least one photonic structure having two separate photonic bands is modulated, so that light supplied to the at least one photonic structure and initially in one of the two photonic bands of the traveling along a forward direction in the at least one photonic structure is converted to light in a second one of the photonic bands, and light in the one photonic band traveling along a backward direction opposite to the forward direction in the at least one photonic structure is not converted and remains in the one photonic band, achieving non-reciprocity. An interferometer comprises a first and a second photonic structure coupled at two coupler regions. The first photonic structure has two separate photonic bands. The refractive index of the first photonic structure is modulated, so that light supplied to the first photonic structure and initially in a first one of the photonic bands traveling along a forward direction in the at least first photonic structure is converted to light in a second one of the photonic bands, and light in the first photonic band traveling along a backward direction opposite to the forward direction in the at least first photonic structure is not converted and remains in the first photonic band. Light supplied to a first end of the first photonic structure and initially in the first photonic band traveling along a forward direction in the photonic structures will pass to a second end of the first photonic structure, and light supplied to the second end of the first photonic structure and traveling along a backward direction in the photonic structures will pass to an end of the second photonic structure.01-06-2011
20120321240ELECTRO-OPTICAL DEVICE AND METHOD FOR PROCESSING AN OPTICAL SIGNAL - An electro-optical device for processing an optical signal, comprises an electrode that is arranged and designed so that the optical signal at least partially intrudes the electrode when the optical signal is processed in the electro-optical device. An insulator is arranged adjacent to the electrode so that one face of the electrode contacts the insulator. A gate is arranged so that a voltage is applicable between the electrode and the gate such that a charge layer is induced on the face of the electrode that is contacting the insulator.12-20-2012
20100158426ELECTRO-OPTIC MODULATOR - A doping profile for a modulator facilitates rapidly changing the carrier density in a waveguide. The carrier density change causes rapid changes in the index of refraction of the waveguide. Example modulators include a ring modulator and a Mach Zender modulator. A charge reciprocating section may be provided to control the amount of injected charge.06-24-2010
20110235960OPTICAL MODULATOR AND MANUFACTURING METHOD THEREFOR - An optical modulator includes a modulation region for modulating light, and a passive region adjacent the modulation region. The modulation region and the passive region include, in common, a semiconductor substrate, an n-type cladding layer on the semiconductor substrate, a core layer on the n-type cladding layer, and a p-type cladding layer on the core layer. The modulation region further includes a contact layer on the p-type cladding layer, and a P-side electrode on the contact layer. The passive region further includes an undoped cladding layer between the core layer and the p-type cladding layer.09-29-2011
20100232738METHODS OF MANIPULATING OPTICAL ENERGY WITHIN A WAVEGUIDE - A micro-ring configured to selectively detect or modulate optical energy includes at least one annular optical cavity; at least two electrodes disposed about the optical cavity configured to generate an electrical field in the at least one optical cavity; and an optically active layer optically coupled to the at least one optical cavity. A method of manipulating optical energy within a waveguide includes optically coupling at least one annular optical cavity with the waveguide; and selectively controlling an electrical field in the at least one annular optical cavity to modulate optical energy from the waveguide.09-16-2010
20100232737OPTICAL DEVICE - There is provided an optical device including a plurality of Mach-Zehnder modulators; and an input branching waveguide to split an input light so as to direct the resulting light to the plurality of Mach-Zehnder modulators; the Mach-Zehnder modulator comprising: a splitter coupled to the input branching waveguide; pair of waveguides coupled to the splitter; a combiner coupled to the pair of waveguides; and a signal electrode to apply signals to the pair of waveguides; wherein the splitters are disposed in a different orientation to each other.09-16-2010
20100232736Optical Control Device - It is an object to provide an optical control device capable of realizing speed matching between a microwave and a light wave or impedance matching of microwaves and of reducing a driving voltage. An optical control device including a thin plate 09-16-2010
20120087616Optical control element - An optical control element which has a thin plate having an electro-optical effect and a thickness of 10 μm or less, optical waveguides formed in the thin plate, and a plurality of optical control portions for controlling light propagating through the optical waveguide, wherein, a portion between a plurality of optical control portions is connected by a control signal wiring line that includes any one of a coplanar waveguide type disposed only on a surface of the thin plate, a coplanar waveguide type disposed on the surface of the thin plate and a ground electrode disposed on a back surface thereof, or a micro strip line, for arrival times of light and electric signal set to be substantially the same.04-12-2012
20120087614OPTICAL MODULATOR - An optical modulator includes: a semiconductor chip; a waveguide in the semiconductor chip; a traveling wave electrode including an input portion and an output portion, to which a signal is applied for modulating light passing through the waveguide; a power supply line connected to the input portion via a first wire; and a termination resistor connected to the output portion via a second wire. Capacitance between the output portion and a grounding point is larger than capacitance between the input portion and the grounding point.04-12-2012
20100202723OPTICAL MODULATOR - In an optical modulator, an intermediate substrate is provided separate from a main substrate on which a plurality of optical modulation sections are provided in parallel, and signal lines corresponding to the optical modulation sections are formed on the intermediate substrate. The signal lines are connected to signal electrodes corresponding to the main substrate, and have electrical lengths that are different from each other. Furthermore, the propagation loss per unit length in the signal lines on the intermediate substrate is preferably less than the propagation loss per unit length in the signal electrodes on the main substrate. As a result, even if a plurality of optical modulation sections are arranged in parallel, and the input ends of the signal electrodes of the optical modulation sections are arranged side by side on one side face of the substrate, synchronized modulation light of a low noise at a wide band width can be output from the optical modulation sections.08-12-2010
20100202722OPTICAL MODULATOR - In an optical modulator, respective lights for where one input light has been branched, are input via a curved waveguide to a plurality of optical modulation sections arranged in parallel on the same substrate. In a Mach-Zehnder type optical waveguide, a spacing between the pair of branching waveguides of the adjacent optical modulation sections, is formed so as to become wider in the vicinity of a border of an input side polarization inversion region than in the vicinity of a start point of an interaction portion. As a result, even if a signal electrode of the optical modulation sections shifts at the boundary portion of the polarization inversion region, the spacing between the signal electrodes does not become narrow, and hence the radius of curvature of curved waveguides for guiding the input light to the respective optical modulation sections can be increased, so that it becomes possible to apply input light to the optical modulation sections at low loss.08-12-2010
20080232735Surface parallel modulator - SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si09-25-2008
20080226215OPTICAL WAVEGUIDE DEVICES - The present invention provides an optical waveguide device having a configuration such that the optical waveguide is folded back on an end area of the optical waveguide substrate to widen the modulation band. The optical waveguide device includes a substrate body made of an electro-optical material, optical waveguide, and modulation electrodes for applying a voltage on the optical waveguide. The optical waveguide includes first primary areas, a first curved area, first folding-back areas provided between the first curved area and a folding-back point, second primary areas, a second curved area, and second folding-back areas provided between the second curved area and the folding-back point. At least a part of the signal electrode is provided in a folding-back region extending from the first curved area and the second curved area to the folding-back point.09-18-2008
20110262071BRANCHED OPTICAL WAVEGUIDE, OPTICAL WAVEGUIDE SUBSTRATE AND OPTICAL MODULATOR - An optical waveguide is formed on a ferroelectric substrate having a thickness of 20 μm or less by diffusion of a dopant or ion exchange. The optical waveguide has a non-branched section 10-27-2011
20080212913 HIGH SPEED SEMICONDUCTOR OPTICAL MODULATOR - The present invention provides an optical waveguide modulator. In one embodiment, the optical waveguide modulator includes a semiconductor planar optical waveguide core and doped semiconductor connecting paths located adjacent opposite sides of the core and capable of applying a voltage across the core. The optical waveguide core and connecting paths form a structure having back-to-back PN semiconductor junctions. In another embodiment, the optical waveguide modulator includes a semiconductor optical waveguide core including a ridge portion wherein the ridge portion has at least one PN semiconductor junction located therein. The optical waveguide modulator also includes one or more doped semiconductor connecting paths located laterally adjacent the ridge portion and capable of applying a voltage to the ridge portion.09-04-2008
20130209021OPTICAL SEMICONDUCTOR MODULATOR DEVICE AND OPTICAL MODULE - In an optical semiconductor device related to the present invention, a first light source outputting light having a first polarization, a second light source outputting light having a second polarization, a first optical modulator being optically connected to an output side of the first light source and modulating the light that is output from the first light source to output a light signal, a second optical modulator being optically connected to an output side of the second light source and modulating the light that is output from the second light source to output a light signal, and an optical multiplexer coupling the light signal that is output from the first optical modulator with the light signal that is output from the second optical modulator to output a coupled light signal, are integrated on a semiconductor substrate together.08-15-2013
20130114922FLEXIBLE OPTICAL DEVICE - A flexible and optionally highly elastic waveguide capable of propagating and emitting light is disclosed. The flexible waveguide comprises a flexible material having a surface and an end, wherein a first portion of the light is emitted through at least a portion of the surface of the flexible waveguide, and a second portion of the light is emitted through the end. The flexible waveguide can be used, for example as an area illuminator for many applications. Additionally disclosed is a clothing device for providing illumination. The clothing device comprises clothing (or even optionally a sheet) and a light source for providing light. In one embodiment the clothing device comprises the flexible waveguide.05-09-2013
20110268382Optical waveguide device module - An optical waveguide device module is provided, wherein a control electrode includes a signal electrode and ground electrodes disposed to sandwich the signal electrode, a connection substrate is provided with a signal line and ground lines disposed to sandwich the signal line, the distance W11-03-2011
20110211786SILICON-BASED ELECTRO-OPTIC DEVICE - In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.09-01-2011
20080199123ULTRAFAST GE/SI RESONATOR-BASED MODULATORS FOR OPTICAL DATA COMMUNICATIONS IN SILICON PHOTONICS - An optical modulator structure includes at least two waveguide structures for inputting and outputting an optical signal. At least one ring resonator structure provides coupling between the at least two waveguide structures. The at least one ring resonator structure includes Ge or SiGe.08-21-2008
20100284644OPTICAL MODULATOR - An optical modulator includes a substrate that is formed of a material having an electro-optic effect, an optical waveguide 11-11-2010
20100316324Silicon-Based Optical Modulator With Improved Efficiency And Chirp Control - A silicon-based optical modulator exhibiting improved modulation efficiency and control of “chirp” (i.e., time-varying optical phase) is provided by separately biasing a selected, first region of the modulating device (e.g., the polysilicon region, defined as the common node). In particular, the common node is biased to shift the voltage swing of the silicon-based optical modulator into its accumulation region, which exhibits a larger change in phase as a function of applied voltage (larger OMA) and improved extinction ratio. The response in the accumulation region is also relatively linear, allowing for the chirp to be more easily controlled. The electrical modulation input signal (and its inverse) are applied as separate inputs to the second region (e.g., the SOI region) of each arm of the modulator.12-16-2010
20130188902Electro-optic device - An electro-optic device, comprising a layer of light-carrying material; and a rib, projecting from the layer of light-carrying material, for guiding optical signals propagating through the device. The layer of light-carrying material comprises a first doped region of a first type extending into the rib, and a second doped region of a second, different type extending into the rib such that a pn junction is formed within the rib. The pn junction extends substantially parallel to at least two contiguous faces of the rib, resulting in a more efficient device. In addition, a self-aligned fabrication process can be used in order to simplify the fabrication process and increase reliability and yield.07-25-2013
20110317956SEMICONDUCTOR OPTICAL MODULATOR, SEMICONDUCTOR OPTICAL INTEGRATED DEVICE, AND METHOD OF MANUFACTURING THE SAME - The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (12-29-2011
20130202243Electro-optic Devices - An electro-optic device 08-08-2013
20100014800Hybrid Strip-Loaded Electro-Optic Polymer/Sol-Gel Modulator - A hybrid strip-loaded EO polymer/sol-gel modulator in which the sol-gel core waveguide does not lie below the active EO polymer waveguide increases the higher electric field/optical field overlap factor Γ and reduces inter-electrode separation d thereby lowering the modulator's half-wave drive voltage Vπ, reducing insertion loss and improving extinction. The strip-loaded modulator comprises an EO polymer layer that eliminates optical scattering caused by sidewall roughness due to etching. Light does not encounter rough edges as it transitions to and from the sol-gel and EO polymer waveguides. This reduces insertion loss.01-21-2010
20130209020THREE PORT TRANSCEIVER - An optical coherent transceiver comprising a polarization and phase-diversity coherent receiver and a polarization and phase-diversity modulator on the same substrate interfaced by three grating couplers, on grating coupler coupling in a signal, one grating coupler coupling in a laser signal, and a third grating coupler coupling out a modulated signal.08-15-2013

Patent applications in class Electro-optic

Patent applications in all subclasses Electro-optic