Class / Patent application number | Description | Number of patent applications / Date published |
372500220 | Having an amplifier | 12 |
20080298417 | OPTICAL SPECTRAL FILTERING AND DISPERSION COMPENSATION USING SEMICONDUCTOR OPTICAL AMPLIFIERS - The invention provides a device and a method for extending the bandwidth of short wavelength and long wavelength fiber optic lengths. The invention provides for an optical transmitter package device comprising: a laser diode; and a semiconductor optical amplifier connected directly after and in close proximity to the laser diode, wherein the semiconductor optical amplifier is adapted to operate in a frequency domain such that the semiconductor optical amplifier filters and reshapes optical wavelengths from the laser diode, and wherein the semiconductor optical amplifier is biased below an amplification threshold for the semiconductor optical amplifier. The device may also comprises a feedback circuit which comprises an optical splitter, wherein the feedback circuit samples reshaped optical output from the semiconductor optical amplifier and dynamically adjusts one or both of the semiconductor optical amplifier and the laser diode. In the case of a multimode fiber, the present invention provides the additional ability to provide a controlled offset launch into the fiber and the ability to control modal noise devoid of a specialized optical connector. | 12-04-2008 |
20100329297 | HIGHLY INTEGRABLE EDGE EMITTING ACTIVE OPTICAL DEVICE AND A PROCESS FOR MANUFACTURE OF THE SAME - Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates for a number of applications, many of which are in the field of communications. The thinness of these platelets and the precision with which their dimensions are defined using the process described herein makes it conducive to assemble them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. This technology has been used to integrate edge emitting lasers onto silicon substrates, a significant challenge in the field of silicon optoelectronics. | 12-30-2010 |
20110134957 | Low Chirp Coherent Light Source - A coherent light source having a semiconductor laser resonator and an optical amplifier which amplifies coherent light emitted by the semiconductor laser resonator in response to current injection, in which the amount of current injected into the semiconductor laser is controlled for conformity with a chirp requirement of an optical communication system. The optical amplifier, which introduces no chirp, may be controlled to match an optical power requirement of the optical communication system. A heater may be provided to introduce a low frequency chirp in order to suppress interferometric intensity noise and unwanted second-order effects such as stimulated Brillouin Scattering. The optical amplifier may be monolithically formed with the semiconductor laser resonator, with separate electrodes provided for injecting current into the semiconductor laser resonator and the optical amplifier. | 06-09-2011 |
20110216800 | TWO-STAGE LASER SYSTEM FOR ALIGNERS - The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser ( | 09-08-2011 |
20120002696 | ALIGNMENT METHOD OF SEMICONDUCTOR OPTICAL AMPLIFIER AND LIGHT OUTPUT DEVICE - Provided is an alignment method of a semiconductor optical amplifier with which optimization of coupling efficiency between incident laser light and light waveguide of the semiconductor optical amplifier is enabled without depending on an external monitoring device. The alignment method of a semiconductor optical amplifier is a method that optically amplifies laser light from a laser light source and outputs the optically amplified laser light, which adjusts relative position of the semiconductor optical amplifier with respect to the laser light entering into the semiconductor optical amplifier by flowing a given value of current to the semiconductor optical amplifier while entering the laser light from the laser light source to the semiconductor optical amplifier so that a voltage applied to the semiconductor optical amplifier becomes the maximum. | 01-05-2012 |
20120093191 | METAL DIFFRACTION GRATING WITH HIGH REFLECTION RESISTANCE TO A FEMTOSECOND MODE FLOW, SYSTEM INCLUDING SUCH AN GRATING, AND METHOD FOR IMPROVING THE DAMAGE THRESHOLD OF A METAL DIFFRACTION GRATING - A reflection metal diffraction grating has a high diffraction efficiency for diffracting femtosecond mode laser pulses, and includes a substrate with a set of lines having a pitch Λ. The substrate is made of metal or covered with a metal layer, and the grating includes a thin film of dielectric material having a thickness, the dielectric film covering the metal surface of the lines of the grating, the grating being suitable for receiving a pulsed electromagnetic lightwave in a femtosecond mode. The thickness of the dielectric thin film is lower than 50 nm, and is suitable for reducing by a third order factor at least the maximum of the square of the electric field of the electromagnetic lightwave on the metal surface and in the metal layer of the substrate as compared to the square of the electric field at the surface of a metal grating not having a dielectric thin film. | 04-19-2012 |
20120236894 | WAVELENGTH CONVERSION DEVICE, SOLID-STATE LASER APPARATUS, AND LASER SYSTEM - A wavelength conversion device in this disclosure may include: a nonlinear crystal including a first surface; a first film to be joined to the first surface and including at least one layer; and a first prism to be joined to the first film. | 09-20-2012 |
20130121361 | Interband Cascade Laser Amplifier Medium - An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film ( | 05-16-2013 |
20130121362 | Infrared Laser - Laser devices are presented in which a graphene saturable absorber and an optical amplifier are disposed in a resonant optical cavity with an optical or electrical pump providing energy to the optical amplifier. | 05-16-2013 |
20130294472 | Integration of laser into optical platform - An optical device includes a laser or amplifier positioned on a base. The laser includes a ridge of a gain medium positioned on the base such that the base extends out from under the ridge. The ridge includes a top that connects lateral sides of the ridge. Electronics are configured to drive an electrical current through the ridge such that the electrical current passes through one or more of the lateral sides of the ridge. | 11-07-2013 |
20140376585 | Infrared Laser - Laser devices are presented in which a graphene saturable absorber and an optical amplifier are disposed in a resonant optical cavity with an optical or electrical pump providing energy to the optical amplifier. | 12-25-2014 |
20150049777 | HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE - Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser. | 02-19-2015 |