Class / Patent application number | Description | Number of patent applications / Date published |
372500124 | With vertical output (surface emission) | 59 |
20080253423 | COMPACT OPTO-ELECTRONIC DEVICE INCLUDING AT LEAST ONE SURFACE EMITTING LASER - This relates to an opto-electronic device comprising at least two opto-electronic components ( | 10-16-2008 |
20080273569 | SURFACE-EMITTING LASER DEVICE - A VCSEL device includes a polyimide having a larger thickness (d | 11-06-2008 |
20080298418 | VERTICAL CAVITY SURFACE EMITTING LASER - A vertical cavity surface emitting laser capable of efficiently injecting carries into an active region directly under a photonic crystal mirror is provided. The vertical cavity surface emitting laser includes a first reflective mirror | 12-04-2008 |
20080298419 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE - A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes in the in-plane direction and a part of the periodic-refractive-index structure includes a plurality of parts that disorder the periodicity. | 12-04-2008 |
20080298420 | Surface emitting semiconductor laser element - A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser. | 12-04-2008 |
20080304532 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMING APPARATUS USING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser in which a reflector material is not limited, a film thickness of the reflector is uniform, and a single lateral mode operation can be performed at high light output power. The surface emitting laser includes a resonator including a first refractive index region located at a central portion thereof and a second refractive index region which is located at a peripheral portion thereof and is lower in effective refractive index than the first refractive index region. Further, the resonator is configured such that a resonator length of a region including the first refractive index region satisfies a resonance condition and a resonator length of a region including the second refractive index region does not satisfy the resonance condition. | 12-11-2008 |
20090003401 | SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME - Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion. | 01-01-2009 |
20090010297 | VERTICAL CAVITY SURFACE EMITTING LASER ARRAY AND METHOD FOR MANUFACTURING, AND IMAGE FORMING APPARATUS USING VERTICAL CAVITY SURFACE EMITTING LASER ARRAY - A vertical cavity surface emitting laser array is disclosed which allows wires for individually driving devices arrayed at a small pitch to be provided on the laser array with ease and with a high degree of freedom is provided. The vertical cavity surface emitting laser array includes a first substrate including a plurality of vertical cavity surface emitting laser devices each having an active layer disposed between reflection mirrors constituting a resonator, and a second substrate including wires for providing electrical contact with the surface emitting laser devices and having a configuration which permits transmission of light emitted from the surface emitting laser devices. In the vertical cavity surface emitting laser array, the second substrate is bonded to the first substrate on the laser emitting side of the first substrate. | 01-08-2009 |
20090022199 | SURFACE LIGHT EMITTING LASER ELEMENT, SURFACE LIGHT EMITTING LASER ARRAY PROVIDED WITH IT, ELECTRO-PHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM - A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light. | 01-22-2009 |
20090041077 | OPTICAL READ-OUT - An arrangement for read-out of information from an optical information carrier is disclosed. The system comprises a VCSEL for improving the signal-to-noise ratio of light reflected from and modulated by an information carrier. The VCSEL has a substrate that transmits the emission from the active regions of the VCSEL. Thereby, the need for beam-splitters in the detection branch of the device is completely eliminated. | 02-12-2009 |
20090074025 | Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method - In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength. | 03-19-2009 |
20090074026 | STRUCTURE HAVING PHOTONIC CRYSTAL AND SURFACE-EMITTING LASER - In a structure having a two-dimensional photonic crystal in which structures having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crystal, wherein the structure comprises a one-dimensional photonic crystal in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal. | 03-19-2009 |
20090080489 | VERTICAL CAVITY SURFACE EMITTING LASER AND IMAGE FORMING APPARATUS USING THE VERTICAL CAVITY SURFACE EMITTING LASER - Provided is a laser having a multilayer reflector that suppresses the multimode operation. A vertical cavity surface emitting laser includes a first mirror, a cavity having an active layer, and a second mirror that are laminated. The second mirror is a multilayer reflector comprised of a first layer and a second layer that are alternately plurally laminated, the second layer having a refractive index higher than that of the first layer. At least one of the plural second layers has an oxidized confinement structure having an oxidized region and a non-oxidized region. | 03-26-2009 |
20090129422 | HIGH-VOLUME ON-WAFER HETEROGENEOUS PACKAGING OF OPTICAL INTERCONNECTS - An optical connector module complete with optoelectronic devices supporting integrated circuitry, and connector housing may be fabricated on a wafer level. A plurality of cavities may be formed on the backside of the wafer to accommodate an optoelectronic device. Active circuitry may be formed in a front side of the wafer. Through-vias electrically connect the front side to the back side. The backside of the wafer is overmolded with a polymer layer which when singulated into individual dies forms the plastic housing of an optical connector module. | 05-21-2009 |
20090168829 | VERTICAL-CAVITY SURFACE-EMITTING LASER - A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area of the layer structure, wherein a pair of holes sandwiching therebetween the specific area and opposing each other have a dimension or shape different from the dimension or shape of others of the holes. | 07-02-2009 |
20090196319 | VERTICAL CAVITY SURFACE EMITTING LASER - A vertical cavity surface emitting laser is provided which controls the reflectivity at the middle portion and the peripheral portion of the mirror with a simple structure to cause oscillation of a single lateral mode by use of a mirror having the refractive index changing periodically in the mirror plane direction. The vertical cavity surface emitting laser. | 08-06-2009 |
20090201965 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror. | 08-13-2009 |
20090207875 | LIGHT CHIP AND OPTICAL MODULE - There is provided a light chip and an optical module with high reliability. | 08-20-2009 |
20090232179 | SURFACE EMITTING LASER - A surface emitting laser having a photonic crystal layer | 09-17-2009 |
20090238233 | OPTICAL DIE STRUCTURES AND ASSOCIATED PACKAGE SUBSTRATES - Optical die structures and associated package substrates are generally described. In one example, an electronic device includes a package substrate having a package substrate core, a dielectric layer coupled with the package substrate core, and one or more input/output (I/O) optical fibers coupled with the package substrate core or coupled with the build-up dielectric layer, or combinations thereof, the one or more I/O optical fibers to guide I/O optical signals to and from the package substrate wherein the one or more I/O optical fibers allow both input and output optical signals to travel through the one or more I/O optical fibers. | 09-24-2009 |
20090262775 | SURFACE EMITTING LASER - A surface emitting laser which oscillates at a wavelength X of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided. | 10-22-2009 |
20090268773 | SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ELEMENT ARRAY, METHOD OF FABRICATING A SURFACE EMITTING LASER ELEMENT - A surface emitting laser element that includes a cylindrical mesa post in which a plurality of semiconductor layers including an active layer is grown and that emits a laser light in a direction perpendicular to a substrate surface, the surface emitting laser element including a dielectric multilayer film on a top surface of the mesa post in at least a portion over a current injection area of the active layer; and a dielectric portion that includes layers fewer than layers of the dielectric multilayer film and that is arranged on a portion excluding the portion over the current injection area on the top surface of the mesa post and on at least part of a side surface of the mesa post. | 10-29-2009 |
20090268774 | Vertical cavity surface emitting laser and method of manufacturing the same - A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer. | 10-29-2009 |
20090279579 | Two-dimensional photonic crystal surface-emitting laser light source - The present invention provides a two-dimensional photonic crystal surface-emitting laser light source capable of producing a beam that is not accompanied by unnecessary side lobes. A window-shaped electrode | 11-12-2009 |
20090279580 | SURFACE-EMITTING TYPE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME - To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode. | 11-12-2009 |
20090285255 | Two-Dimensional Photonic Crystal Surface Emitting Laser Light Source - An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector | 11-19-2009 |
20090296768 | VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL), VCSEL ARRAY DEVICE, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS - A vertical cavity surface emitting laser (VCSEL) includes a semiconductor substrate, a lower reflecting mirror formed on the semiconductor substrate, and a mesa structure. The mesa structure includes an active layer, a selective oxidization layer that includes a current confined structure, and an upper reflecting mirror. A lower electrode is connected to the semiconductor substrate, and an upper electrode is connected to the upper reflecting mirror. The VCSEL emits laser light perpendicularly to the plane of the semiconductor substrate when an electric current flows between the upper electrode and the lower electrode. The semiconductor substrate is inclined with respect to (100) plane. The active layer includes a quantum well layer having a compressive strain with respect to the substrate, and a spacer layer. The spacer layer has either a compressive strain or a tensile strain with respect to the semiconductor substrate. | 12-03-2009 |
20090304038 | Semiconductor Laser Device - A semiconductor laser device comprising an optically pumped surface emitting vertical emitter ( | 12-10-2009 |
20090304039 | OPTOELECTRONIC SEMICONDUCTOR ELEMENT - An optoelectronic semiconductor component has a semiconductor body ( | 12-10-2009 |
20100002741 | VERTICAL SURFACE LIGHT EMITTING DEVICE WITH MULTIPLE ACTIVE LAYERS - A vertical cavity surface light emitting device (VCSLED) with multiple active layers includes at least one optical resonance unit comprising a highly-doped conduction region ( | 01-07-2010 |
20100027578 | SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer. | 02-04-2010 |
20100040104 | Vertical cavity surface emitting laser - The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength λ | 02-18-2010 |
20100046570 | SURFACE-EMITTING LASER - Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer. | 02-25-2010 |
20100046571 | SURFACE EMITTING LASER DEVICE - A surface emitting laser device can further improve the light emission efficiency thereof to enlarge the degree of freedom of the device. The surface emitting laser device includes an active layer | 02-25-2010 |
20100158067 | OPTICAL MODULE - An optical module comprising a laser device adapted to emit a laser beam from a convex surface and including a horizontal resonator surface-emitting structure provided with a first lens through which an optical axis of the laser beam passes, and a second lens through which the laser beam having passed through the first lens passes, a surface opposed to the second lens-provided surface and the surface provided with the first lens being bonded together through a first adhesive transparent to the laser beam. | 06-24-2010 |
20100220763 | SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser array using a photonic crystal, which allows an active layer to be shared without disconnecting the active layer between the individual surface emitting lasers adjacent to each other, and enables high-density arraying easily. The surface emitting laser array includes: at least two surface emitting lasers formed on a substrate, each having a laminated structure of multiple semiconductor layers including a semiconductor multilayer mirror, an active layer, and a photonic crystal having a refractive index profile in an in-plane direction, the photonic crystal and the semiconductor multilayer mirror in the laminated structure forming a waveguide for guiding light in a resonance mode; and a region without the photonic crystal provided between adjacent surface emitting lasers in the surface emitting laser array, in which the surface emitting lasers have the same semiconductor multilayer mirror and the same active layer. | 09-02-2010 |
20110044369 | SILICON CARRIER OPTOELECTRONIC PACKAGING - An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. A plurality of OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the OE elements positioned in optical alignment with the optical via for receiving the light. A carrier is interposed between electrical interconnect elements. The carrier is positioned between the wiring of the silicon layer and a circuit board and the carrier is electrically connecting first interconnect elements connected to the wiring of the silicon layer and second interconnect elements connected to the circuit board. | 02-24-2011 |
20110122912 | OPTICAL TRANSMITTERS FOR MM-WAVE ROF SYSTEMS - Optical transmitters for radio over fiber systems are disclosed. More particularly, the optical transmitters include optically-injection-locked vertical cavity surface-emitting laser devices (OIL VCSELS). The transmitters include a master laser, at least one slave laser injection-locked by the master laser, and an equalizer/filter unit that enables the ratio of the carrier power to the sideband power in the output signal of the transmitter to be varied and optimized independently of the injection ratio of the transmitter. | 05-26-2011 |
20110150025 | SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer. | 06-23-2011 |
20110182317 | SURFACE EMITTING SEMICONDUCTOR LASER HAVING A PLURALITY OF ACTIVE ZONES - A surface emitting semiconductor laser includes a semiconductor body having at least two active zones that emit laser radiation and are connected to one another by a tunnel junction; an external resonator mirror arranged outside the semiconductor body and forming a laser resonator; and at least one polarization-selective element arranged in the laser resonator. | 07-28-2011 |
20110182318 | SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY - A surface-emitting laser includes a surface relief structure provided on an upper multilayer reflector, the surface relief structure including a region of a first laminate, a region of a second laminate that has a larger optical thickness than the first laminate, and a region of a third laminate that has a larger optical thickness than the first laminate and the second laminate. | 07-28-2011 |
20110188533 | INTEGRATED RARE EARTH DEVICES - The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area. | 08-04-2011 |
20110243176 | INTEGRATING AND ALIGNING LASER CHIPS ON SLIDERS FOR HAMR APPLICATIONS - A method of producing a slider wafer populated with electromagnetic components optically aligned with photonic elements for HAMR applications. Laser chips are transferred from a laser substrate wafer to the slider wafer by a massively parallel printing transfer process. After wafer bonding the laser chips to the slider wafer, the shape and optical alignment of the photonic elements are precisely aligned en masse by lithographic processing. | 10-06-2011 |
20110274131 | TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE - Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same. | 11-10-2011 |
20120106585 | HIGH FILL-FACTOR EFFICIENT VERTICAL-CAVITY SURFACE EMITTING LASER ARRAYS - An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays. | 05-03-2012 |
20120177079 | Laser Hammering Technique for Aligning Members of a Constructed Array of Optoelectronic Devices - A parallel transceiver includes a constructed array of dice. The constructed array comprises an integer number of dies that each have an integer number of optoelectronic devices arranged on the die. Each die forming the constructed array is attached to a respective tab of a shim that is fixed to a first lead frame. Each tab includes a bridge region and a mounting region. Each die is attached to a respective mounting region of a corresponding tab. When necessary, a laser hammering technique is performed whereby laser generated energy is applied along an axis in the bridge region of the shim to adjust the position of the optoelectronic devices on the die attached to the tab in one or more directions relative to the axis. | 07-12-2012 |
20130223466 | OPTICAL ELEMENT FOR VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING LASER - The present invention relates to an optical element for VEC-SELs or VECSEL arrays. The optical element is formed of a substrate ( | 08-29-2013 |
20130308672 | Chip array structure for laser diodes and packaging device for the same - A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall. | 11-21-2013 |
20140010254 | HIGH FILL-FACTOR EFFICIENT VERTICAL-CAVITY SURFACE EMITTING LASER ARRAYS - An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays. | 01-09-2014 |
20140023104 | SURFACE EMITTING LASER DEVICE AND ATOMIC OSCILLATOR - A surface emitting laser device includes a substrate, a lower reflector, an active layer, an upper reflector, and surface emitting lasers configured to emit light. A second phase adjustment layer, a contact layer, a first phase adjustment layer, and a wavelength adjustment layer are successively layered from the active layer side. The total optical thickness from the active layer side of the second phase adjustment layer to the midsection of the wavelength adjustment layer is approximately (2N+1)×λ/4, where λ represents a wavelength of light, and N represents a positive integer. The optical thickness from the active layer side of the second phase adjustment layer to the midsection of the contact layer is approximately Nλ/2. At least two of the surface emitting lasers have the wavelength adjustment layer arranged at different thicknesses and are configured to emit light with different wavelengths. | 01-23-2014 |
20140064315 | METHOD AND APPARATUS INCLUDING MOVABLE-MIRROR MEMS-TUNED SURFACE-EMITTING LASERS - VCSEL apparatus having a substrate, a solid-state gain medium, a reflective mirror on one side of the medium, a movable reflective mirror on an opposite side of the medium, and a mechanism configured to move the movable mirror to tune a characteristic wavelength. Also described is a VCSEL apparatus having a silicon substrate having a slot therethrough and electrical connections formed on a first face, a substrate having VCSELs thereon and mounted across the slot and electrically connected to the electrical connections on the silicon substrate, and a glass substrate affixed to a second face of the silicon substrate. Also described is a VCSEL apparatus having a graded-index lens array having GRIN lenses mounted adjacently in a staggered arrangement, a PCB mounted to the lens array, and VCSEL chips mounted adjacently on the PCB and arranged so as to emit laser light through the lenses. | 03-06-2014 |
20150010034 | SHORT CAVITY SURFACE EMITTING LASER WITH DOUBLE HIGH CONTRAST GRATINGS WITH AND WITHOUT AIRGAP - A short-cavity semiconductor laser heterostructure, such as a vertical-cavity surface emitting laser (VCSEL) comprising a laser cavity having upper and lower surfaces and an active region disposed between the upper and lower surfaces for generating light and emitting light substantially perpendicular to the upper surface of the cavity, an upper high contrast grating (HGC) mirror disposed adjacent to the upper surface of the laser cavity, and a lower HCG mirror disposed adjacent to the lower surface of the laser cavity. | 01-08-2015 |
20150063396 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, VERTICAL CAVITY SURFACEEMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, IMAGE FORMING APPARATUS, OPTICAL TRANSMISSION MODULE AND OPTICAL TRANSMISSION SYSTEM - A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure. | 03-05-2015 |
20150071320 | VCSEL MODULE AND MANUFACTURE THEREOF - The invention describes a method of manufacturing a VCSEL module ( | 03-12-2015 |
20150078412 | Chip Array Structure for Laser Diodes and Packaging Device for the Device - A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall. | 03-19-2015 |
20190146319 | HIGH POWER CAVITY PACKAGE FOR LIGHT EMITTERS | 05-16-2019 |
20190148914 | VERTICAL CAVITY SURFACE EMITTING LASER, METHOD FOR FABRICATING VERTICAL CAVITY SURFACE EMITTING LASER | 05-16-2019 |
20190148918 | CONFIGURING AN EMITTER PATTERN FOR AN EMITTER ARRAY TO AVOID A POTENTIAL DISLOCATION LINE | 05-16-2019 |
20220140573 | EMITTER OXIDATION UNIFORMITY WITHIN A WAFER - A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer. | 05-05-2022 |