Class / Patent application number | Description | Number of patent applications / Date published |
372500121 | Multiple wavelength emissive | 29 |
20080304531 | Integrated broadband quantum cascade laser - A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed. | 12-11-2008 |
20090052492 | OPTICAL PICKUP AND OPTICAL DISC DEVICE - An optical pickup according to the present invention includes an integrated circuit element (LDD) | 02-26-2009 |
20090067466 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor laser device comprising: a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface. | 03-12-2009 |
20090097523 | SEMICONDUCTOR LASER APPARATUS AND METHOD OF MANUFACTURING THE SAME - Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other. | 04-16-2009 |
20090135878 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount. | 05-28-2009 |
20090207874 | MULTIWAVELENGTH LASER SYSTEM AND METHOD FOR OPHTALMOLOGICAL APPLICATIONS - A multiwavelength laser system for opthalmological applications. The system including a first semiconductor diode laser including a first working beam of a first wavelength; and at least one second semiconductor diode laser having a second working beam of a second wavelength. The second wavelength being different from the first wavelength. | 08-20-2009 |
20090232178 | TWO-WAVELENGTH SEMICONDUCTOR LASER DEVICE - A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf | 09-17-2009 |
20090245316 | MULTI-WAVELENGTH HYBRID SILICON LASER ARRAY - A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within the III-V wafer; and bonding the silicon on insulator wafer with the III-V wafer. | 10-01-2009 |
20090279578 | DUAL WAVELENGTH LASER DEVICE FOR OPTICAL COMMUNICATION - A dual wavelength laser device including a cap, a header, a first laser chip and a second laser chip. The cap includes a cap body and a lens embedded on the cap body. The header forms an accommodating space with the cap. The first laser chip is arranged in the accommodating space and emitting a first laser beam toward the lens. The second laser chip is arranged in the accommodating space and emitting a second laser beam toward the lens. | 11-12-2009 |
20090285254 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W | 11-19-2009 |
20100067559 | LASER DIODE DEVICE, OPTICAL APPARATUS AND DISPLAY APPARATUS - A laser diode device includes a first laser diode element, a second laser diode element and a third laser diode element having a longer lasing wavelength than the first and second 6 laser diode elements. The first, second and third laser diode elements are arranged in a package, and the third laser diode element is not electrically connected to the first and second laser diode elements. | 03-18-2010 |
20100111131 | SEMICONDUCTOR LASER APPARATUS - A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other. | 05-06-2010 |
20100128750 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second mount for emitting light. The first light-emitting element and the second light-emitting element are placed so that the emission direction of light from the second light-emitting element is at an angle of depression with respect to the emission direction of light from the first light-emitting element and that the emission direction of light from the first light-emitting element and the emission direction of light from the second light-emitting element substantially coincide with each other as viewed from above the base. | 05-27-2010 |
20100189155 | LASER LIGHT EMITTING DEVICE - Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring | 07-29-2010 |
20100215073 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base. | 08-26-2010 |
20100246629 | MULTIPLE-WAVELENGTH LASER DEVICE - A multiple-wavelength laser device includes a first semiconductor laser chip having two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; a second semiconductor laser chip having two or less than two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; an optical coupler that combines the output optical axes of the first and the second semiconductor laser chips; and a plurality of drive current pathways or a plurality of signal transmission pathways that are coupled to each of the unit laser portions of the first and the second semiconductor laser chips with a connection conductor. | 09-30-2010 |
20100260227 | SEMICONDUCTOR LASER APPARATUS AND FABRICATION METHOD THEREOF - A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device. | 10-14-2010 |
20100329298 | INTRACAVITY FREQUENCY-CONVERTED SOLID-STATE LASER FOR THE VISIBLE WAVELENGTH REGION - The present invention provides an intracavity frequency-converted solid state laser for the visible wavelength region. The laser comprises a semiconductor laser ( | 12-30-2010 |
20110007771 | SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING THE SAME AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor laser device. The melting point of the second bonding layer is lower than that of the first bonding layer, and a first height from the main surface to a fourth surface of the second semiconductor laser device is larger than a second height from the main surface to a second surface of the first semiconductor laser device. | 01-13-2011 |
20110051773 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device that can suppress size increase of a semiconductor laser element and increase in an interval between light emitting portions and can improve productivity is provided. This semiconductor laser device has a first semiconductor laser element, and a second semiconductor laser element which is a monolithic multi-wavelength semiconductor laser element. The second semiconductor laser element includes a semiconductor substrate, and, of side faces of the semiconductor substrate of the second semiconductor laser element, a side face arranged opposite the first semiconductor laser element is inclined with respect to the normal direction of a major face of the semiconductor substrate so that a distance from the first semiconductor laser element is increasingly large away from a mounting member. | 03-03-2011 |
20110064111 | MOUNTING MEMBER AND SEMICONDUCTOR LASER APPARATUS HAVING THE SAME - Provided is a mounting member having a light receiving element, capable of constraining increase in size and of arranging a plurality of laser element portions closer to each other. The mounting member includes three or more electrodes, which respectively include element mounting portions arranged in a first direction, and a light receiving element disposed in a second direction intersecting with the first direction relative to the element mounting portions. The length in the second direction of at least one of the element mounting portions disposed at both ends in the first direction among the three or more element mounting portions is smaller than the length in the second direction of an element mounting portion disposed at an inner position in the first direction among the three or more element mounting portions. | 03-17-2011 |
20110211610 | Light emitting device and optical apparatus using the same - A light emitting device includes: a support base; a first light emitting element which is provided at one surface side of the support base and has a first substrate; and a second light emitting element which is provided between the first light emitting element and the support base and has a second substrate, which has a light emitting section as a semiconductor layer and a peripheral section other than the light emitting section at the first light emitting element side of the second substrate, and which has an embedded layer formed of a material with higher heat conductivity than the semiconductor layer in the peripheral section. | 09-01-2011 |
20120250718 | MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE - A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of λ | 10-04-2012 |
20130089116 | MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE - A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the bottom face and he side faces of the groove in the block so that their laser beams are emitted in the predetermined direction, | 04-11-2013 |
20130315273 | INTEGRATED SEMICONDUCTOR LASER ELEMENT - Integrated are: semiconductor lasers of distributed feedback type that oscillate in single mode at emission wavelengths different from one another; a coupler that has as many input ports as the semiconductor lasers, the input ports to which output light from the semiconductor lasers are input, the coupler guiding and outputting the output light; and an amplifier that amplifies the output light from the coupler, and a predetermined relation holds true, where “N” is the number of the semiconductor lasers, “Ldfb” is a cavity length of each of the semiconductor lasers, “Δν | 11-28-2013 |
20140146844 | Multi-Wavelength Semiconductor Laser Device - A multi-wavelength semiconductor laser device includes a block having a V-shaped groove with two side faces extending in a predetermined direction; and laser diodes with different light emission wavelengths mounted on the side faces of the groove in the block so that their laser beams are emitted in the predetermined direction. | 05-29-2014 |
20160087399 | Laser Diode Apparatus - Laser diode apparatus, comprising a carrier ( | 03-24-2016 |
20220140572 | Dual Wavelength Visible Laser Source - The dual wavelength laser diode module is a module that consists of two or more wavelengths separated by 10 nm or more nm with the goal to produce an output beam of two different wavelength beams that are not-colinear. Providing to two separate lines in the focal point of a Fourier transform lens. | 05-05-2022 |
20220140574 | HELICAL EMITTER STACKING FOR WAVELENGTH-BEAM-COMBINING LASER SYSTEMS - In various embodiments, multiple laser emitters are helically arranged around a central axis and emit their individual beams toward the central axis. A collection of mirrors is disposed at the central axis, and each mirror is angled so that the reflected beams all exit the helical stack, in parallel and vertically stacked, in the same direction toward a shared exit point. | 05-05-2022 |