Class / Patent application number | Description | Number of patent applications / Date published |
372460012 | Channeled substrate | 31 |
20080267238 | SEMICONDUCTOR LASER DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate. | 10-30-2008 |
20090245313 | MULTI-BEAM SEMICONDUCTOR LASER - An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N≧2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion. | 10-01-2009 |
20090290612 | SEMICONDUCTOR LASER - A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface. | 11-26-2009 |
20100111129 | LASER DIODE AND METHOD OF MANUFACTURING THE SAME - A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer. | 05-06-2010 |
20100202486 | Vertical cavity surface emitting laser and method of manufacturing thereof - A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector. | 08-12-2010 |
20100278207 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside. | 11-04-2010 |
20100290495 | LASER DEVICE, A LIGHT SIGNAL GENERATING DEVICE, AND AN OPTICAL RESONATOR AND A METHOD FOR PRODUCING LIGHT - A laser device ( | 11-18-2010 |
20100290496 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes: an active layer made of a nitride formed on a semiconductor substrate; a stripe-shaped ridge waveguide including a cladding layer having a ridge structure in its upper portion, formed on the active layer; a first current blocking layer transparent to light generated from the active layer, formed at least on a side face of the ridge waveguide; a second current blocking layer having light absorbency, formed on a flat portion of the cladding layer on each side of the ridge waveguide at a position spaced from the side face of the waveguide; and a third current blocking layer formed on the first and second current blocking layers, wherein ηg>η1, ηg>η2, and ηg<η3 are satisfied where η1, η2, η3, and ηg are respectively the heat expansion coefficients of the first, second, and third current blocking layers and gallium nitride. | 11-18-2010 |
20100303115 | METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE - A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF | 12-02-2010 |
20100316081 | VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) DEVICE AND THE METHOD OF MANUFACTURING THEREOF - A Vertical-Cavity Surface-Emitting Laser (VCSEL) device includes a substrate, a first semiconductor multi-layer film of a first conductive type formed on the substrate, an active layer, a second semiconductor multi-layer film of a second conductive type, an electrode pad electrically coupled to the second semiconductor multi-layer film, and a post structure formed on the substrate, the post structure comprising a light emitter, the post structure being continuously surrounded by a first groove, and a second groove being continuously formed outside of the first groove with respect to the post structure. | 12-16-2010 |
20100329295 | LASER DIODE - A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode. | 12-30-2010 |
20110002354 | SEMICONDUCTOR LASER DEVICE - The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other. | 01-06-2011 |
20110013660 | OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY - An optoelectronic semiconductor body comprises a substrate ( | 01-20-2011 |
20110026557 | METHOD OF MANUFACTURING VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD OF MANUFACTURING LASER ARRAY, VERTICAL CAVITY SURFACE EMITTING LASER AND LASER ARRAY, AND IMAGE FORMING APPARATUS WITH LASER ARRAY - A method of manufacturing a vertical cavity surface emitting laser of a mesa structure, the method comprises: sequentially laminating on a substrate a plurality of semiconductor layers including a bottom reflecting mirror, an active layer, a selective oxidation layer and a top reflecting mirror, followed by forming a dielectric film on the laminated semiconductor layers; forming on the dielectric film a first resist pattern comprised of large and small annular opening patterns and large and small annular resist patterns around the same central axis; forming the large and small annular opening patterns in the dielectric film; forming a second resist pattern in the dielectric film so that only the small annular opening pattern is exposed, followed by forming an annular electrode in the exposed small annular opening pattern; and forming a third resist pattern over the annular electrode. | 02-03-2011 |
20110080932 | Laser diode and laser diode device - A laser diode capable of being easily mounted, and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is absorbed in the saturable absorption region to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, and an interaction between the saturable absorption region and the gain region is initiated, thereby self-oscillation can be produced. | 04-07-2011 |
20110090928 | LASER DIODE - A laser diode includes an n-type semiconductor region, a p-type semiconductor region, a semiconductor mesa provided between the n-type semiconductor region and the p-type semiconductor region, the semiconductor mesa including an active layer, and a semiconductor burying region located between the n-type semiconductor region and the p-type semiconductor region, the semiconductor burying region being provided on a side face of the semiconductor mesa. The semiconductor burying region includes an n-type semiconductor burying layer and a p-type semiconductor burying layer. The n-type semiconductor burying layer is provided between the p-type semiconductor region and the p-type semiconductor burying layer. The p-type semiconductor burying layer is doped with an element that forms an electron trapping level in the band gap of the p-type semiconductor burying layer. | 04-21-2011 |
20110116526 | SEMICONDUCTOR OPTICAL DEVICE - By forming upper-bank patterns made of Au with a thickness of 1.5 μm or larger on bank portions, a solder material on a submount and a surface of a conductive layer in an upper part of a ridge portion of a laser chip are separated so as not to be in contact with each other, thereby preventing the stress generated in a bonding portion when bonding the laser chip and the submount from being applied to the ridge portion. | 05-19-2011 |
20110142089 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE DEVICE - A first semiconductor layer, an active layer, a second semiconductor layer, and a contact layer are sequentially stacked on a substrate. A ridge portion extending between both facets of a resonator is provided in the second semiconductor layer and the contact layer. A current confining layer is formed to be in contact with the ridge portion. The current confining layer has an opening on an upper surface of the ridge portion. A first electrode in contact with the contact layer is formed in the opening. A second electrode is provided on the first electrode. A non-current injection portion in contact with the contact layer is provided on the upper surface of the ridge portion near the resonator facet. The current confining layer and the non-current injection portion are formed of the same dielectric film. The second electrode is spaced apart from an upper surface region of the non-current injection portion. | 06-16-2011 |
20110142090 | LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE - A laser diode includes: a substrate; a semiconductor layer including a lower cladding layer, an active layer, and an upper cladding layer; a strip-shaped ridge provided on an upper cladding layer side in the semiconductor layer; and a pair of resonator end faces sandwiching the semiconductor layer and the ridge. The substrate includes strip-shaped grooves provided on both sides of a portion facing the ridge along the portion facing the ridge, and extending in a direction different from a direction orthogonal to the extending direction of the ridge, and L | 06-16-2011 |
20110150022 | GAN LASER ELEMENT - In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction. | 06-23-2011 |
20110164642 | LASER DIODE WITH RIDGE WAVEGUIDE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LD with an improved heat dissipating function in the edge regions is disclosed. The LD provides the core region including the active layer and extending whole of the substrate, and the ridge waveguide structure on the core region that extends in a direction along which the light generated in the active layer is guided. The ridge waveguide structure is buried by a thick resin layer in both sides thereof, but the resin layer is removed in the edge regions close to respective facets of the LD. | 07-07-2011 |
20110182314 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, AND OPTICAL TRANSMISSION DEVICE - A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction. | 07-28-2011 |
20110182315 | Surface-emitting semiconductor laser and manufacturing method thereof - A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure. | 07-28-2011 |
20110216798 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less. | 09-08-2011 |
20110216799 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe. | 09-08-2011 |
20110261856 | VERTICAL-CAVITY SURFACE-EMITTING LASER - A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section configured to have a relatively high reflection coefficient to cause light to be reflected in a predetermined, non-Gaussian, spatial mode across the sub-wavelength grating. The VCSEL also includes a reflective layer and a light emitting layer disposed between the grating layer and the reflector, in which the sub-wavelength grating and the reflector form a resonant cavity. | 10-27-2011 |
20110292959 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge stripe portion and a second scribed level-different portion formed in each side surface thereof extending in parallel to the ridge stripe portion, the first scribed level-difference portion is located between the second scribed level-different portion and the ridge stripe portion, a cross-sectional shape of the first scribe level-different portion taken along the resonator surface is polygonal, and one of angles of inclined parts which is located closer to an associated one of the ridge stripe portions is smaller than the other one of the angles located closer to an associated one of the second scribed portions, the inclined parts being sides of the polygonal shape. | 12-01-2011 |
20110317733 | Nitride semiconductor laser chip and method of fabrication thereof - A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less. | 12-29-2011 |
20120082178 | Vertical cavity surface emitting laser and method for manufacturing the same - A vertical cavity surface emitting laser capable of high-speed modulation and stabilized control of polarization direction of the laser light is provided, including a resonator which is formed by stacking a semiconductor substrate, a lower mirror layer formed on the upper side of the semiconductor substrate, an active layer formed on the upper side of the lower mirror layer, and an upper mirror layer including an oxidized layer formed on the upper side of the active layer, and a portion of which is formed in a mesa shape from a predetermined position to the upper surface in a height direction; an insulation layer covering the side surface of the mesa-shaped portion of the resonator, and the upper surface of the non-mesa-shaped portion of the resonator; and electrodes being wired on the upper surface of the upper mirror layer and on the lower surface of the semiconductor substrate, respectively. Further, a portion of the insulation layer formed on the side surface of the mesa-shaped portion of the resonator is formed to be uniformly thicker than another portion along the height direction of the mesa-shaped portion. | 04-05-2012 |
20120106583 | VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER - A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG. | 05-03-2012 |
20120114003 | LASER DEVICE, A LIGHT SIGNAL GENERATION DEVICE, AND AN OPTICAL RESONATOR AND A METHOD FOR PRODUCING LIGHT - A laser device includes a ridge waveguide having an active layer between upper and lower cladding layers. A ridge formed in the upper cladding layer defines the width of a light guiding region in the active layer, and is formed so that a portion of the light guiding region extends into the ridge. A plurality of reflecting slots extend across and into the ridge to a depth sufficient to extend into the extending portion in order that the reflectivity of each slot is on the order of 2%. The slots intersect more than 20% of the total mode energy in the light guiding region, and this in combination with the gain of the active layer facilitates lasing within the light guiding region independently of the reflectivity of end facets of the waveguide. The laser device is particularly suitable for integrally forming with other optical components on a single semiconductor chip. | 05-10-2012 |