Entries |
Document | Title | Date |
20080273565 | EXCITED STATE QUANTUM CASCADE PHOTON SOURCE - A quantum cascade source, such as a QC laser, is provided comprising a plurality of repeat units each including an active region and an injector region. The active region includes at least two quantum wells that, in response to an applied electrical bias, provide a first, second, and third electron energy level, each resulting from a respective quantum well excited state. The first and second energy levels are configured so that an electron transition from the first energy level to the second energy level emits a photon of a selected wavelength. The second and third energy levels are configured so that an electron transition from the second energy level to the third energy level comprises a nonradiative transition to empty the second energy level sufficiently quickly to promote a population inversion between the first and second energy levels. | 11-06-2008 |
20080273566 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, BACKLIGHT, DISPLAY UNIT, ELECTRONIC DEVICE, AND LIGHT-EMITTING UNIT - A semiconductor light-emitting element includes a nitride-based Group III-V compound semiconductor, wherein the semiconductor light-emitting element has a structure in which an active layer including one or a plurality of well layers is sandwiched between a p-side cladding layer and an n-side cladding layer, and the composition of at least one of the well layers of the active layer is modulated in the direction perpendicular to the thickness direction of the least one of the well layers. | 11-06-2008 |
20080279244 | SINGLE-MODE DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS - The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area. | 11-13-2008 |
20080285611 | Semiconductor Laser Device - An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of <100>DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs. | 11-20-2008 |
20080298414 | SEMICONDUCTOR LASER DIODE - A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical guide layer; a second optical guide layer disposed on the active layer; and a second clad layer disposed on the second optical guide layer, having a greater band gap energy than the second optical guide layer, the band gap energy decreasing as being farther from the second optical guide layer. | 12-04-2008 |
20080298415 | SEMICONDUCTOR DEVICE - A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Be | 12-04-2008 |
20090022196 | HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS - An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted. | 01-22-2009 |
20090034570 | QUANTUM CASCADE LASER STRUCTURE - A quantum cascade laser structure in accordance with the invention comprises a number of cascades ( | 02-05-2009 |
20090034571 | MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUANTUM WELLS - Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well. | 02-05-2009 |
20090052488 | QUANTUM CASCADE LASER ELEMENT - A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element | 02-26-2009 |
20090059985 | EL SEMICONDUCTOR DEVICE - An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity. | 03-05-2009 |
20090135875 | SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A semiconductor laser ( | 05-28-2009 |
20090141765 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer. | 06-04-2009 |
20090168826 | Semiconductor lasers utilizing optimized n-side and p-side junctions - A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio. | 07-02-2009 |
20090213890 | QUANTUM CASCADE LASER - A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels ( | 08-27-2009 |
20090245311 | PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMICONDUCTOR LASER - Provided are a process for producing a nitride semiconductor laser that is a process applied to materials wherein a diffusion of an impurity is not easily attained, such as nitride semiconductor material, and substituted for any process including the step of local diffusion of an impurity, which has been hitherto carried out for GaAlAs based or AlGaInP based semiconductors, and that is a process which is effective, high in precision, and suitable for mass production; and a nitride semiconductor laser produced by this process. The nitride-semiconductor-producing process of the present invention includes the steps of: preparing a substrate having an MQW active layer made of a nitride semiconductor containing In; irradiating a vicinity of a light-emitting end face of the multiquantum well active layer, or a planned region of the light-emitting end face selectively with a laser beam; and performing heating treatment after the laser-irradiating step. | 10-01-2009 |
20090296766 | QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved. | 12-03-2009 |
20100008392 | SEMICONDUCTOR OPTICAL DEVICE - An edge-emitting semiconductor optical device comprises a first cladding layer, an active layer, and a second cladding layer. The first cladding layer is provided on a semiconductor substrate. The active layer is provided on the first cladding layer. The semiconductor substrate has a higher band gap than that of the active layer. The first cladding layer includes a first light-absorbing layer and a first light-transmitting layer. The first light-absorbing layer has a lower band gap than that of the active layer, and the first light-transmitting layer has a higher band gap than that of the active layer. The second cladding layer is provided on the active layer. | 01-14-2010 |
20100040102 | OPTOELECTRONIC DEVICES - Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer formed on the active layer and including a second barrier layer. The active layer is positioned between and adjacent to the first barrier layer and the second barrier layer. | 02-18-2010 |
20100040103 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. | 02-18-2010 |
20100074293 | Single-Photon Source and Method for the Production and Operation Thereof - In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting. | 03-25-2010 |
20100080257 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers. | 04-01-2010 |
20100111127 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures | 05-06-2010 |
20100135349 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 06-03-2010 |
20100150196 | Laser Diode - The present invention provides a laser diode having both a small vertical far-field beam divergence and a large vertical optical confinement factor, as well as a method of fabricating the laser diode. The laser diode comprises a layer stack of semiconductor material, which includes a mode-splitting layer having a low refractive index inserted between waveguide layers. In addition to increasing the vertical near-field beam width of the laser diode, the mode-splitting layer also produces a shoulder in an optical mode generated in an active layer of the layer stack, increasing vertical overlap of the optical mode with the active layer. | 06-17-2010 |
20100150197 | Laser diode epitaxial wafer and method for producing same - A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×10 | 06-17-2010 |
20100166033 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer. | 07-01-2010 |
20100183042 | OPTICAL DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second type semiconductor layer has a first surface and a second surface. The first surface is in contact with the luminous layer. A rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer. | 07-22-2010 |
20100195686 | Quantum cascade detector type device with high injector - The invention relates to a quantum cascade device of detector type comprising two electrodes for applying a control electrical field, and a waveguide positioned between the two electrodes, said device comprising a gain region made up of a plurality of layers and comprising alternating strata of a first type each defining a quantum barrier and strata of a second type each defining a quantum well, each layer of the gain region comprising an injection barrier exhibiting an injection subband of charge carriers with a lower energy level called injector level (i) and an active area, said active area being made of a set of pairs of strata made from semiconductive materials so that each of the wells has at least one upper subband called third subband ( | 08-05-2010 |
20100195687 | Semiconductor laser device - A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide layer held between the p-type cladding layer and the n-type cladding layer, and an active layer containing In held between the p-type guide layer and the n-type guide layer. The In compositions in the p-type guide layer and the n-type guide layer are increased as approaching the active layer respectively. Each of the p-type guide layer and the n-type guide layer may have a plurality of In | 08-05-2010 |
20100195688 | SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a semiconductor laser including a first conductive type of a lower clad layer | 08-05-2010 |
20100238963 | Gallium nitride based semiconductor laser device - A gallium nitride based semiconductor laser device comprises: a first cladding layer having a first conductivity type; an active layer provided on the first cladding layer; an overflow prevention layer having a second conductivity type provided on the active layer; and a second cladding layer having the second conductivity type provided on the overflow prevention layer. The second cladding layer has a ridge portion and a non-ridge portion, and is made of an Al | 09-23-2010 |
20100238964 | Semiconductor laser structure - A semiconductor laser structure includes: a plurality of laser structure units, wherein each laser structure unit includes a N conductive type clad layer, a light emission layer and a P conductive type clad layer, which are stacked in this order; and a tunnel junction layer disposed between two adjacent laser structure units. The tunnel junction layer includes a P conductive type layer and a N conductive type layer. The P conductive type layer includes a dopant of zinc. The N conductive type layer includes a dopant of a group six element. | 09-23-2010 |
20100238965 | Semiconductor laser - A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an Al | 09-23-2010 |
20100278206 | PASSIVATION OF A RESONATOR END FACE OF A SEMICONDUCTOR LASER WITH A SEMICONDUCTOR SUPERLATTICE - The semiconductor laser has a resonator end face ( | 11-04-2010 |
20100296540 | Resonant Cavity Complementary Optoelectronic Transistors - The CMOS field effect transistors, used in microprocessors and other digital VLSI circuits, face major challenges such as thin gate dielectrics leakage and scaling limits, severe short channel effects, limited performance improvement with scaling, complicated fabrication process with added special techniques, and surface mobility degradation. This disclosure proposes a new CMOS-compatible optoelectronic transistor. The current is much higher than the MOS transistors, due to the high carrier mobility with bulk transportation. The optoelectronic transistors are scalable to the sub-nanometer ranges without short channel effects. It is also suitable for low power applications and ULSI circuits. The new transistor consists of a laser or LED diode as drain or source, and a photo sensor diode (avalanche photo diode) as source or drain. The transistor is turned on by applying a gate voltage, similar to the CMOS transistors, and a laser or LED light signal is sent to the nearby photo diode, causing an avalanche breakdown and high drain current. The transistor is surrounded by dielectrics and metal isolations, which serve as a metal box or cavity, so the generated laser or LED lights are confined and reflected back from the metal. The drain current increases exponentially with the drain or gate voltage. This exponential drain current vs. drain or gate voltage characteristics makes the optoelectronic transistor run much faster than the transitional linear MOSFET. | 11-25-2010 |
20100309943 | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES - A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer. | 12-09-2010 |
20110026556 | QUANTUM CASCADE LASER - A quantum cascade laser is configured to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures | 02-03-2011 |
20110044365 | SURFACE-EMITTING LASER DEVICE - A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index n | 02-24-2011 |
20110064108 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER AND VERTICAL-CAVITY SURFACE EMITTING LASER ARRAY - A method of manufacturing a surface emitting laser element of a vertical cavity type in accordance with the present invention is characterized in that comprises the following steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor. | 03-17-2011 |
20110080930 | Highly Power-efficient and Broadband Quantum Cascade Lasers - The present invention relates generally to highly power-efficient quantum cascade sources, such as highly power-efficient quantum cascade lasers having ultra-strong coupling between injector and active regions which may be configured to provide broadband quantum cascade lasers. | 04-07-2011 |
20110080931 | CIRCULAR SEMICONDUCTOR LASERS HAVING LATTICES FOR VERTICAL EMISSION - A semiconductor laser includes a laser resonator ( | 04-07-2011 |
20110103421 | APPLICATION-ORIENTED NITRIDE SUBSTRATES FOR EPITAXIAL GROWTH OF ELECTRONIC AND OPTOELECTRONIC DEVICE STRUCTURES - The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride thin film or films deposited on it for specific electronic or optoelectronic device applications. Such application-oriented nitride substrates, which can be composed of ternary In | 05-05-2011 |
20110128984 | NATIVE GREEN LASER SEMICONDUCTOR DEVICES - A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range. | 06-02-2011 |
20110150020 | II-VI MQW VSCEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD - Light sources are disclosed. A disclosed light source includes a III-V based pump light source ( | 06-23-2011 |
20110158278 | HYBRID SILICON VERTICAL CAVITY LASER WITH IN-PLANE COUPLING - A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer. | 06-30-2011 |
20110216797 | SELF-OSCILLATING SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF - There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode. | 09-08-2011 |
20110243172 | ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES - A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane. | 10-06-2011 |
20110243173 | MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS - Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons. | 10-06-2011 |
20110292958 | ENHANCED PLANARITY IN GaN EDGE EMITTING LASERS - A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 | 12-01-2011 |
20120002695 | METHOD OF DRIVING A LASER DIODE - An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over. | 01-05-2012 |
20120033699 | SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, DISPLAY APPARATUS INCLUDING THE SURFACE-EMITTING LASER ARRAY AS A LIGHT SOURCE, PRINTER HEAD, AND PRINTER - Provided is a surface-emitting laser including a periodic gain structure, which is capable of improving uniformity of carrier injection into multiple active regions and carrier confinement, to thereby improve laser characteristics. The surface-emitting laser includes: a first DBR layer; a first cladding layer; multiple active regions each including a multiple quantum well structure; an interbarrier layer disposed between the multiple active regions; a second cladding layer; a current confinement structure; and a second DBR layer. The multiple active regions are disposed at multiple positions at which light intensity of a gain region is maximum, and the interbarrier layer has an energy level at a bottom of a conduction band thereof which is higher than an energy level at a bottom of a conduction band of a barrier layer of the multiple quantum well structure of each of the multiple active regions, which are disposed at the multiple positions. | 02-09-2012 |
20120039350 | HIGH POWER, HIGH EFFICIENCY QUANTUM CASCADE LASERS WITH REDUCED ELECTRON LEAKAGE - Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics. | 02-16-2012 |
20120069863 | GROUP III NITRIDE-BASED GREEN-LASER DIODES AND WAVEGUIDE STRUCTURES THEREOF - Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency. | 03-22-2012 |
20120134380 | QUANTUM CASCADE LASER - A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face. | 05-31-2012 |
20120134381 | VERTICAL CAVITY SURFACE EMITTING DEVICES INCORPORATING WAFER FUSED REFLECTORS - A method of forming an optoelectronic device comprising growing a first multi-layer | 05-31-2012 |
20120189030 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including In | 07-26-2012 |
20120300805 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like current block layers is formed above the optical confinement layer and opposed to each other through an opening extending in a first direction. A second cladding layer is formed on the current block layers and the optical confinement layer. A contact layer is formed above the second cladding layer. A mesa portion is formed by being sandwiched between a pair of groove portions. The current block layers and the opening are included in the mesa portion, and an end of each current block layer on an opposite side to the opening and a side wall of the mesa portion are spaced apart by a predetermined value or more in a second direction. | 11-29-2012 |
20130016751 | SEMICONDUCTOR LASER DEVICEAANM TAKADO; ShinyaAACI KyotoAACO JPAAGP TAKADO; Shinya Kyoto JPAANM Kashiwagi; JunichiAACI KyotoAACO JPAAGP Kashiwagi; Junichi Kyoto JP - A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an Al | 01-17-2013 |
20130022074 | LASER EMISSION SYSTEMS, HETEROSTRUCTURE AND ACTIVE ZONE HAVING COUPLED QUANTUM-WELLS, AND USE FOR 1.55 MM LASER EMISSION - An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 μm are disclosed. | 01-24-2013 |
20130044782 | Optical Device Structure Using GaN Substrates and Growth Structures for Laser Applications - Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed. | 02-21-2013 |
20130100978 | HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION - An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region. | 04-25-2013 |
20130121359 | INTEGRATED BROADBAND QUANTUM CASCADE LASER - A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed. | 05-16-2013 |
20130182736 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material. | 07-18-2013 |
20130195136 | SEMICONDUCTOR LASER - A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer. | 08-01-2013 |
20130195137 | METHOD FOR ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER - Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed. | 08-01-2013 |
20130208752 | HYBRID SILICON VERTICAL CAVITY LASER WITH IN-PLANE COUPLING - A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer. | 08-15-2013 |
20130243024 | SEMICONDUCTOR STACK AND VERTICAL CAVITY SURFACE EMITTING LASER - A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Eg | 09-19-2013 |
20130287055 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including In | 10-31-2013 |
20130301667 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD OF THE SAME - This provides a semiconductor laser device of a high light output efficiency, which is high in current confinement effect, small in leak current, and favorable in temperature property, and indicates a low threshold current, and can effectively confine laser light to a stripe region, and is favorable in beam profile. This semiconductor laser device includes the laminated structure of an n-AlInP clad layer, a superlattice active layer section, a p-AlInP first clad layer, a GaInP etching stop layer are formed, and on top of that, there are a p-AlInP second clad layer, a GaInP protective layer and a p-GaAs contact layer, which are processed into a stripe-shaped ridge. A p-side electrode is directly coated and formed on the etching stop layer of ridge top surface. | 11-14-2013 |
20130322481 | LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS - Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n-side cladding layer including (Al,In)GaN having an n-type conductivity, an n-side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p-side waveguide layer including (Al,In)GaN having a p-type conductivity, a p-side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets. The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 20 | 12-05-2013 |
20130329761 | QUANTUM CASCADE SEMICONDUCTOR LASER - A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor. | 12-12-2013 |
20140010253 | HYBRID SILICON LASER-QUANTUM WELL INTERMIXING WAFER BONDED INTEGRATION PLATFORM FOR ADVANCED PHOTONIC CIRCUITS WITH ELECTROABSORPTION MODULATORS - Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate. | 01-09-2014 |
20140016659 | Semiconductor Device and Fabrication Method - A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10 | 01-16-2014 |
20140050242 | Optoelectric Integrated Circuit - A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed. | 02-20-2014 |
20140064314 | Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers - A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. | 03-06-2014 |
20140072009 | ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER - A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ | 03-13-2014 |
20140153603 | QUANTUM CASCADE LASER ELEMENT - [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (J | 06-05-2014 |
20140161145 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer. | 06-12-2014 |
20140161146 | LASER DEVICE HAVING A LOOPED CAVITY CAPABLE OF BEING FUNCTIONALIZED - The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide. | 06-12-2014 |
20140169397 | Laser - A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0<ξ<1. | 06-19-2014 |
20140204970 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 07-24-2014 |
20140211823 | SEMICONDUCTOR LASER AND OPTICAL SEMICONDUCTOR DEVICE - In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions. | 07-31-2014 |
20140219306 | Multicolor Photonic Crystal Laser Array - A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission centre wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal centre wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum. | 08-07-2014 |
20140233596 | SEMICONDUCTOR LASERS AND ETCHED-FACET INTEGRATED DEVICES HAVING NON-UNIFORM TRENCHES - An edge-emitting etched-facet optical semiconductor structure includes a substrate, an active multiple quantum well (MQW) region formed on the substrate, a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet disposed in a first window and a waveguide second etched end facet disposed in a second window, and first and second trenches having non-uniform widths extending in substantially the longitudinal direction between the first and second windows. | 08-21-2014 |
20140241391 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING THE SAME, AND DISPLAY APPARATUS - A semiconductor light-emitting element includes a substrate, a recess in the substrate, and a ridge portion disposed in the recess, the ridge portion having a constant width, in which the recess has a width that varies in the longitudinal direction of the ridge portion, the ridge portion is formed of a compound semiconductor multilayer structure including an active layer, and the active layer has a thickness that varies in the longitudinal direction of the ridge portion. | 08-28-2014 |
20140241392 | QUANTUM CASCADE LASER - A quantum cascade laser | 08-28-2014 |
20140247850 | MULTIQUANTUM WELL STRUCTURES FOR SUPPRESSION OF ELECTRON LEAKAGE AND REDUCTION OF THRESHOLD-CURRENT DENSITY IN QUANTUM CASCADE LASERS - Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26. | 09-04-2014 |
20140247851 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having first, second, third, and fourth regions; a stacked semiconductor layer including n-type lower and upper conductive layers, a core layer having a mesa structure, and a cladding layer; first and second buried layers disposed on side surfaces of the core layer and above the substrate; a first electrode disposed on the upper conductive layer above the first region; and a second electrode disposed on the lower conductive layer above the fourth region. The core layer is disposed on the lower conductive layer above the second region. The upper conductive layer is disposed on the first buried layer and the core layer. The cladding layer is disposed on the upper conductive layer above the second region, The substrate and the cladding layer are formed of an undoped or semi-insulating semiconductor. The first and second buried layers are formed of a semi-insulating semiconductor. | 09-04-2014 |
20140286369 | OPTOELECTRONIC COMPONENT - An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of In | 09-25-2014 |
20140294029 | NITRIDE SEMICONDUCTOR LASER ELEMENT - To realize a nitride semiconductor laser element having improved internal quantum efficiency. The nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; wherein the n-type semiconductor layer includes an n-side optical guide layer; wherein the active layer includes two or more well layers, and at least one barrier layer provided between the well layers; wherein the barrier layer includes a barrier layer having band gap energy higher than that of the n-side optical guide layer; wherein the p-type semiconductor layer includes: an electron barrier layer having band gap energy higher than that of all barrier layers included in the active layer, and a p-side optical guide layer provided between a final well layer, that is a well layer nearest to the p-type semiconductor layer of the two or more well layer, and the electron barrier layer; and wherein the p-side optical guide layer includes: a first region that is disposed on a side of the final well layer and has band gap energy lower than that of the n-side optical guide layer, and a second region that is disposed on a side of the electron barrier layer and has band gap energy higher than that of the n-side optical guide layer. | 10-02-2014 |
20140301420 | SEMICONDUCTOR LASER - A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire. | 10-09-2014 |
20140334512 | DISTRIBUTED FEEDBACK LASER DIODE AND MANUFACTURING METHOD THEREOF - Provided is a distributed feedback-laser diode (DFB-LD) and manufacturing method thereof. The DFB-LD includes a substrate; a lower clad layer having a grating on the substrate; an active waveguide extended in a first direction on the lower clad layer; an upper clad layer on the active waveguide; a signal pad on the upper clad layer; and at least one ground pad spaced apart from the active waveguide, the upper clad layer, and the signal pad in a second direction crossing the first direction, the at least one ground pad being coupled to the lower clad layer. | 11-13-2014 |
20140341245 | ON-CHIP ELECTRICALLY PUMPED OPTICAL PARAMETRIC SOURCE - A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 μm; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer. | 11-20-2014 |
20140341246 | VERTICAL CAVITY SURFACE EMITTING LASER - A vertical cavity surface emitting laser includes an active layer that includes a quantum well, a first cladding layer and a second cladding layer between which the active layer is interposed. A first multilayer reflector layer is arranged on a side of the first cladding layer opposite to that on which the active layer is arranged. A second multilayer reflector layer is arranged on a side of the second cladding layer opposite to that on which the active layer is arranged. At least one of the first cladding layer and the second cladding layer includes a low activity energy layer having a band gap that is smaller than a smallest band gap of an optical confinement layer for forming the quantum well of the active layer and larger than a band gap of the quantum well. | 11-20-2014 |
20140355637 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction. | 12-04-2014 |
20140376584 | ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS - An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer. | 12-25-2014 |
20150030046 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer. | 01-29-2015 |
20150036709 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an Al | 02-05-2015 |
20150055671 | PHOTONIC DEVICES WITH EMBEDDED HOLE INJECTION LAYER TO IMPROVE EFFICIENCY AND DROOP RATE - The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer. | 02-26-2015 |
20150063395 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: | 03-05-2015 |
20150117485 | QUANTUM CASCADE LASER ELEMENT - To raise the upper limit of the temperature range in which a quantum cascade laser (QCL) element for THz range operates at a single frequency. In a quantum cascade laser element in one embodiment of the present invention, each unit structure | 04-30-2015 |
20150131689 | QUANTUM CASCADE LASERS WITH IMPROVED PERFORMANCE USING INTERFACE ROUGHNESS SCATTERING - A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level. | 05-14-2015 |
20150146756 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×10 | 05-28-2015 |
20150303655 | METHOD FOR A GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL) - Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials. | 10-22-2015 |
20150318668 | QUANTUM CASCADE LASER AND METHOD FOR MANUFACTURING QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having first and second regions; a stacked semiconductor layer disposed on the second region, the stacked semiconductor layer including an active layer, the stacked semiconductor layer having a first end facet and a second end facet that constitute a laser cavity; an insulating layer disposed on the first end facet and an upper surface of the stacked semiconductor layer, the insulating layer having an opening on the upper surface; a conductive layer disposed on the insulating layer and in the opening, the conductive layer being in contact with the upper surface through the opening; and a metal layer disposed on the conductive layer on the first end facet and an upper surface. The first end facet of the stacked semiconductor layer is retreated from an end facet of the substrate to a boundary between the first and second regions. | 11-05-2015 |
20150325981 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. | 11-12-2015 |
20150349494 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. | 12-03-2015 |
20150357794 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor region having a main surface including first and second regions arranged in a first axis direction; a stacked semiconductor layer disposed on the second region, the stacked semiconductor layer including a core layer and an upper cladding layer disposed on the core layer; and a distributed Bragg reflector disposed on the first region, the distributed Bragg reflector including at least one semiconductor wall having a side surface extending in a second axis direction perpendicular to the main surface of the semiconductor region, the semiconductor wall including the core layer and the upper cladding layer. The side surface of the semiconductor wall is optically coupled to an end facet of the stacked semiconductor layer. The side surface of the semiconductor wall includes a side surface of the core layer having a recess portion depressed from a side surface of the upper cladding layer in the semiconductor wall. | 12-10-2015 |
20150372456 | HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES - A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems. | 12-24-2015 |
20150380901 | METHOD AND APPARATUS INCLUDING IMPROVED VERTICAL-CAVITY SURFACE-EMITTING LASERS - VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure. | 12-31-2015 |
20160028213 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a mesa stripe structure including an n-type cladding layer, an active layer, and a p-type cladding layer laid one on another; and a buried layer buried on opposite sides of the mesa stripe structure, wherein the active layer is a multiple quantum well structure having well layers and carbon-doped barrier layers, the buried layer includes a p-type semiconductor layer and an Fe-doped or Ru-doped high-resistance semiconductor layer laid one on another, side surfaces of the n-type cladding layer are covered with the p-type semiconductor layer and are not contiguous with the high-resistance semiconductor layer, and side surfaces of the active layer are not contiguous with the p-type semiconductor layer. | 01-28-2016 |
20160049771 | ELECTRON BEAM PUMPED VERTICAL CAVITY SURFACE EMITTING LASER - A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ | 02-18-2016 |
20160064902 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. | 03-03-2016 |
20160079727 | INTEGRATED SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD FOR SAME - The present invention relates to an optical semiconductor integrated element and manufacturing method for same solves difficulty in element manufacture, and reduces optical transmission loss. The present invention is provided with a stripe-shaped waveguide configured from a multilayer structure wherein at least a first conductivity-type lower cladding layer, a waveguide core layer, and an upper cladding layer are layered, and the upper cladding layer is formed using a second conductivity-type upper cladding layer, and an i-type upper cladding layer, which has a bent portion by being shifted in the perpendicular direction with respect to the main extending direction of the waveguide. | 03-17-2016 |
20160087408 | QUANTUM-CASCADE LASER - A quantum cascade laser is configured with a semiconductor substrate and first and second active layers provided in series on the substrate. A unit laminate structure of the first active layer has a subband level structure having an emission upper level and an emission lower level, and is configured so as to be able to generate light of a first frequency ω | 03-24-2016 |
20160094015 | QUANTUM CASCADE LASER - A quantum cascade laser includes a substrate having a principal surface including first and second regions arranged along a first axis; a laser structure disposed on the principal surface in the second region, the laser structure having an end facet intersecting the first axis, the laser structure including a stripe-shaped stacked semiconductor layer extending along the first axis; and a distributed Bragg reflection structure disposed on the principal surface in the first region, the distributed Bragg reflection structure including a semiconductor wall made of a single semiconductor material, the distributed Bragg reflection structure being optically coupled to the end facet of the laser structure. The semiconductor wall has first and second side surfaces that intersect the first axis and extend along a second axis intersecting the principal surface. The semiconductor wall is located away from the end facet of the laser structure. | 03-31-2016 |
20160111858 | HYBRID LASER INCLUDING ANTI-RESONANT WAVEGUIDES - Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed. | 04-21-2016 |
20160156153 | Generating Terahertz Frequency Combs from Quantum Cascade Lasers using Nonlinear Frequency Mixing | 06-02-2016 |
20170237234 | A METHOD FOR GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL) | 08-17-2017 |