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Injection

Subclass of:

372 - Coherent light generators

372039000 - PARTICULAR ACTIVE MEDIA

372430010 - Semiconductor

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
372450010 Particular confinement layer 450
372500100 Monolithic integrated 333
372460010 Particular current control structure 118
372440011 Crystal orientation 45
372490010 Particular coating on facet 43
Entries
DocumentTitleDate
20110176568NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di107-21-2011
20130044780SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY - Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer.02-21-2013
20130028280SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME - Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges.01-31-2013
20110206079SIDE EMITTING SEMICONDUCTOR PACKAGE - A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides.08-25-2011
20090196317LIGHT EMITTING DEVICE - It is enabled to provide that a light emitting device have an electron blocking layer (08-06-2009
20080259981Photonic device including semiconductor structure having doped region with array of subwavelength recesses - Various aspects of the present invention are directed to photonic devices, such as electro-optic modulators, passive filters, and tunable filters. In one aspect of the present invention, a photonic device includes a semiconductor structure having a p-region and an n-region. A doped region is formed on or within the semiconductor structure. The doped region includes at least one generally periodic array of recesses, with the at least one generally periodic array configured to transmit electromagnetic radiation at a selected dominant wavelength. The selected dominant wavelength is tunable by varying the refractive index of the semiconductor structure.10-23-2008
20130039375PHOTONIC CRYSTAL SURFACE EMISSION LASER - A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein a02-14-2013
20120207185METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.08-16-2012
20090116523HYBRID LASER DIODE - Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.05-07-2009
20130058369SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER - An InGaN-on-substrate structure that includes an InGaN layer and two mirror layers on opposing sides of and sandwiching the InGaN layer. The InGN layer includes an InGaN seed layer and an active InGaN layer grown on the InGaN seed layer. Such a structure is useful in a vertical optoelectronic device.03-07-2013
20080219307Single-Mode Photonic-Crystal Vcsels - This specification discloses a VCSEL (Vertical-Cavity Surface-Emitting Laser) device with single-mode output and optionally single polarization output. This device is given by lateral mode confinement by the PBG (Photonic Band-Gap) effect by shallow etching in a partial VCSEL top mirror. The PBG area encircles a MS-region (Mode-Shaping region), which is characterized by large longitudinal mode losses. The MS-region encircles the LA-region (Light Aperture region), which is characterised by low longitudinal mode losses. The MS-region does not contribute to the lateral mode-confinement to the LA-aperture, and the lateral modes confined by the PBG area. The VCSEL is thus optimized for single fundamental mode operation.09-11-2008
20130163629USER-SELECTABLE LASER AND OPTICAL TRANSMITTER HAVING THE SAME - Provided are a user-selectable laser and an optical transmitter including the same. The user-selectable laser is an external cavity laser including a semiconductor laser diode for outputting an optical signal, and a wavelength selection filter. The user-selectable laser may allow a user to select a wavelength selection filter which is optically coupled with the semiconductor laser diode and selectively causes oscillation at the wavelength of an optical signal output from the semiconductor laser diode.06-27-2013
20090046754Nitride semiconductor device and method of manufacturing the same - A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semiconductor layer grown on a major surface thereof; removing deposits from the surface of the substrate by applying a laser beam having the wavelength to the surface of the substrate at energy density causing substantially no multiphoton absorption on the substrate; and dividing the substrate along the division guide groove.02-19-2009
20120114000METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE - A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.05-10-2012
20130163628PROCESS FOR FORMING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER USING TWO-DIMENSIONAL PHOTONIC CRYSTAL AND PRODUCTION PROCESS THEREOF - A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.06-27-2013
20110280267SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package includes a base body made of resin, a first sealing member mounted on an upper surface of the base body and a translucent second sealing member mounted on a front surface of the base body. The base body has an opening passing through the base body from the upper surface to the front surface, and the side of the opening closer to the upper surface is sealed with the first sealing member, while the side of the opening closer to the front surface is sealed with the second sealing member.11-17-2011
20090207872NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a first layer containing Al as a main ingredient and having a thickness not greater than 10 nm or not less than 3 nm; a second layer containing one or more metals selected from Mo and Nb, so as to suppress the upward diffusion of Al; a third layer containing one or more metals selected from Ti and Pt, to suppress the downward diffusion of Al; and a fourth layer being made of Au, from the side in contact with an n-type nitride substrate in order of mention, and after the laminate structure is formed, the n-type ohmic electrode is annealed.08-20-2009
20100091808Semiconductor laser device and manufacturing method therefor - Provides a semiconductor laser device, as well as a manufacturing method therefor, capable of solving a problem of yield decreases in a structure for mounting a nitride semiconductor laser element onto a mount member. The nitride semiconductor laser device has a submount 04-15-2010
20090147812HETEROSTRUCTURE, INJECTOR LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND A SEMICONDUCTOR OPTICAL AMPLIFIER A FINAL STAGE - The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers. The heterostructure, the injection laser, the semiconductor amplifying element, and the semiconductor optical amplifier are proposed, the essential distinction of which consists in modernization of the active region and the leak-in region of the heterostructure, combined choice of location, compositions, refractive indices and thicknesses of the heterostructure layers providing the efficient functioning of the injection lasers, the semiconductor amplifying elements and the semiconductor optical amplifiers in the transient region of formation of controllable emission leak from the active layer.06-11-2009
20090147813LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT EMITTING DEVICE - A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method.06-11-2009
20090022193NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 01-22-2009
20100195684PHOTOELECTROCHEMICAL ETCHING FOR LASER FACETS - A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.08-05-2010
20110200064Optical device and optical apparatus - An optical device includes: an optical element having a first light-emitting region in the vicinity of a first surface and a first metal layer in contact with at least a region of the first surface which does not face the first light-emitting region; a support body disposed on the side of the optical element toward which the first surface faces; and a fuse-bonding layer disposed between the first surface and the support body and in a region which does not face the first light-emitting region, the fuse-bonding layer bonding the first metal layer and the support body.08-18-2011
20090086778NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 04-02-2009
20130010822VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD - Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.01-10-2013
20120106582HEAT SINK FOR A PULSED HIGH-POWER LASER DIODE - A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm05-03-2012
20090290610Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - A method for laterally dividing a semiconductor wafer (11-26-2009
20080240192SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME - A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror.10-02-2008
20080240191SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1010-02-2008
20080273562Nitride Semiconductor Device and Method for Fabricating the Same - A nitride semiconductor device 11-06-2008
20080310470Broadband semiconductor laser - A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.12-18-2008
20080212630Laser apparatus - A laser apparatus includes an excitation light generator for emitting excitation light and a wavelength converter including a solid laser medium for emitting laser light by converting a wavelength of the excitation light. The excitation light generator includes a surface-emitting laser having a first reflector with top and bottom reflectors and an active layer disposed between the top and bottom reflectors. The excitation light generator further includes a second reflector configured to highly reflect the excitation light. The solid laser medium is disposed between the surface-emitting laser device and the second reflector. Reflectivities of the top and bottom reflectors of the first reflector are set so that FWHM of the solid laser medium at the wavelength of the excitation light is greater than a resonance wavelength range of the surface-emitting laser device.09-04-2008
20090129417Surface-Emitting Laser Diode and Method of Manufacturing the Same - A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 05-21-2009
20090129418SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor laser device includes forming a laminate having a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type. The waveguide region is formed to guide light perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer, such that the semiconductor laser device has a first waveguide region and a second waveguide region. The first waveguide region is formed to confine light within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer. In forming the second waveguide region, light is confined therein by providing effective difference in refractive index in the active layer.05-21-2009
20080317080SEMICONDUCTOR LASER DEVICE - In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.12-25-2008
20090097518Vertical cavity surface emitting laser diode and a method for producing the same - A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region around the tunnel junction. The current injected into the second spacer layer is confined by the tunnel junction to reach the active layer, which reduces the increase of the parasitic resistance of the device. The high-resistive region around the tunnel junction reduces the parasitic capacitance of the device.04-16-2009
20090097520INEXPENSIVE VARIABLE REP-RATE SOURCE FOR HIGH-ENERGY, ULTRAFAST LASERS - System for converting relatively long pulses from rep-rate variable ultrafast optical sources to shorter, high-energy pulses suitable for sources in high-energy ultrafast lasers. Fibers with positive group velocity dispersion (GVD) and self phase modulation are advantageously employed with the optical sources. These systems take advantage of the need for higher pulse energies at lower repetition rates so that such sources can be cost effective.04-16-2009
20090097517VCSEL DEVICE AND METHOD FOR FABRICATING VCSEL DEVICE - Provided is a VCSEL device that includes a substrate on which at least a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type are stacked. The second semiconductor multilayer film forms a resonator together with the first semiconductor multilayer film. A conductive first protecting layer is formed in an area in the second semiconductor multilayer film. The area includes at least an emission outlet that emits laser light. An annular electrode is formed on the first protecting layer, and the emission outlet is formed in the annular electrode. An encapsulating material encapsulates at least the first protecting layer and the annular electrode.04-16-2009
20090097519Semiconductor Laser and Method for Producing the Semiconductor Laser - A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (04-16-2009
20080259980Semiconductor Light Emitting Device Including Oxide Layer - A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is grown over an oxide layer disposed between first and second III-nitride layers. The oxide layer may at least partially relieve the strain in the light emitting layer by increasing the in-plane lattice constant of the template on which the light emitting layer is grown. The oxide layer may be formed by growing an AlInN layer in the device, etching a trench to expose the AlInN layer, then oxidizing the AlInN layer.10-23-2008
20100150193MQW Laser Structure Comprising Plural MQW Regions - Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.06-17-2010
20100220757SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer.09-02-2010
20110058583LUMINESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2):03-10-2011
20110058582LUMINESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2):03-10-2011
20100246622BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME - A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.09-30-2010
20090110017SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, a refractive index gradient layer provided on a light extraction surface of the semiconductor layer, and a holding substrate bounded to an outer surface of the refractive index gradient layer with an adhesion layer interposed therebetween. A refractive index of the refractive index gradient layer is changed continuously or stepwise in a film thickness direction such that a semiconductor-layer-side refractive index is substantially equivalent to a refractive index of the semiconductor layer and a holding-substrate-side refractive index is substantially equivalent to a refractive index of the holding substrate. The refractive index gradient layer is formed by vapor plating.04-30-2009
20090067462SEMICONDUCTOR DEVICE - A semiconductor device includes an InP substrate, an AlGaInAs-based first layer, an AlGaInAs-based second layer, an InGaAsP-based third layer, and an InGaAsP-based fourth layer. The first and second layers have compositions which are same or substantially same as each other on an interface therebetween. The composition of the layer varies such that a band gap continuously increases from the first layer side toward the third layer side. The compositions of the second and third layers are set such that energy levels of a valence band maximum are substantially equal to each other on an interface between the second and third layers. The composition of the third layer varies such that a band gap continuously increases from the second layer side toward the fourth layer side. The compositions of the third and fourth layers are same or substantially same as each other on an interface between the third and fourth layers.03-12-2009
20090034568Zinc Oxide Based Compound Semiconductor Device - There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate (02-05-2009
20120243569MULTI-BEAM SEMICONDUCTOR LASER APPARATUS - A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.09-27-2012
20090028201OPTICAL COMMUNICATION SYSTEM AND OPTICAL TRANSMITTER - An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of In01-29-2009
20090213888SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor laser device includes a semiconductor laser, a dangling bond terminating film a cleaved surface of the semiconductor laser and composed of a lithium film or a beryllium film, and a coating film on the dangling bond terminating film.08-27-2009
20110075693SEMICONDUCTOR LASER - The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.03-31-2011
20120201262Edge-Emitting Semiconductor Laser - An edge emitting semiconductor laser (08-09-2012
20090022192Laser Device and Lasing Method - A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (01-22-2009
20090161712SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PRODUCTION EQUIPMENT OF THE SAME06-25-2009
20080310471SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.12-18-2008
20080267236Laser diode with a grating layer - A laser diode is provided comprising a multiple quantum well structure, a current concentrating layer having an oxide-confined aperture, a grating layer having an index of refraction, and a transparent electrode, wherein the transparent electrode has an index of refraction less than the index of refraction of the grating layer.10-30-2008
20080205463METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE - A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.08-28-2008
20120177075Semiconductor Laser with Absorber Applied to a Laser Mirror - The invention relates to a semiconductor laser having at least one semiconductor substrate (07-12-2012
20110188527NANOTUBE ARRAY INJECTION LASERS - Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits.08-04-2011
20090175305NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.07-09-2009
20090175304Two-Dimensional Photonic Crystal Surface Emitting Laser Light Source - A two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes 07-09-2009
20090116524Single-exciton nanocrystal laser - A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided.05-07-2009
20120307853DIODE LASER - A diode laser arrangement having a number of laser bars, wherein each laser bar has a number of emitters generating laser beams arranged offset in a stacked manner to one another, in at least two stacks to form the arrangement.12-06-2012
20110158274Optical Device - A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field.06-30-2011
20090135872SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMING APPARATUS INCLUDING SURFACE EMITTING LASER - A surface emitting laser that oscillates at a wavelength λ includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of Al05-28-2009
20090135871Two-Dimensional Photonic Crystal Surface Emitting Laser - An objective of the present invention is to provide a laser capable of producing a radially polarized laser beam with an annular cross section. A laser oscillator 05-28-2009
20090135870Light source based on simultaneous Two-Photon emission - A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.05-28-2009
20110103418SUPERLUMINESCENT DIODES BY CRYSTALLOGRAPHIC ETCHING - An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.05-05-2011
20120314726LASER DIODE USING ZINC OXIDE NANORODS AND MANUFACTURING METHOD THEREOF - Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.12-13-2012
20120128017Electrical Devices Formed using Ternary Semiconducting Compounds - An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport.05-24-2012
20100208760SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region.08-19-2010
20090059983NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.03-05-2009
20120213239SEMICONDUCTOR LASER CHIP PACKAGE WITH ENCAPSULATED RECESS MOLDED ON SUBSTRATE AND METHOD FOR FORMING SAME - A laminate leadless carrier package having a semiconductor chip mounted at the edge of a recess region in a substrate supporting the chip, the substrate having a plurality of conductive and dielectric layers, a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top surface of the substrate. An encapsulation covers the laser chip, the wire bond, and at least a portion of the top surface of the substrate including the recess region. The encapsulation is an optically transparent molding compound. The package is arranged to be mounted as a side-looker and/or a top-looker.08-23-2012
20120177076SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes: a semiconductor laser element which emits light; a package base having a through hole; a lead pin which passes through the through hole and supplies the current to the semiconductor laser element; a glass material which seals the through hole through which the lead pin passes; and a cap which has a window from which light emitted by the semiconductor laser element is taken out and has the semiconductor laser element in the inside thereof, the cap being joined in air sealing relation to the package base. The lead pin is an iron-nickel alloys in which the coefficient of linear expansion is not higher than a predetermined ratio in difference with the glass material, the saturation magneto-striction constant is not higher than a predetermined value, and volume resistivity is not higher than a predetermined rate.07-12-2012
20100265976SEMICONDUCTOR LAYER STRUCTURE - A III-nitride compound device which has a layer of AlInN (10-21-2010
20120263203SEMICONDUCTOR LASER MODULE AND MANUFACTURING METHOD THEREOF - To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.10-18-2012
20080298408SUBSTRATE FOR OPTICAL SEMICONDUCTOR - A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 μm or more and 1 μm or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter.12-04-2008
20080259982SEMICONDUCTOR LASER DIODE FORMED WITH WINDOW AT CLEAVAGE FACET AND FABRICATING METHOD THEREOF - The semiconductor laser diode formed with a window at a cleavage facet and a fabricating method thereof are disclosed, wherein a ridge adjacent to a cleavage facet of the semiconductor laser diode and part of the p-clad layer underneath the ridge are etched to form a window, such that a current is not applied to along the cleavage facet to thereby prevent the cleavage facet from being degraded and to enhance reliability of the diode.10-23-2008
20110235664OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.09-29-2011
20120287955OPTICAL SEMICONDUCTOR ELEMENT PACKAGE AND OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor element package, includes a ceramic wiring substrate portion having a mounting area for mounting an optical semiconductor element in a center part, and including an element electrode for connecting the optical semiconductor element, and an external connection electrode connected to the element electrode, and a metal sealing ring provided on the ceramic wiring substrate portion, and including an opening portion exposing the element electrode and the mounting area, in a center part, and a ring-like protruding portion provided to an outer peripheral part of the opening portion.11-15-2012
20130022071NITRIDE SEMICONDUCTOR LASER DEVICE AND WAFER - A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.01-24-2013
20130022070SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a semiconductor laser device capable of reliably suppressing degradation of an end face due to interface oxidation and distortion application, and to a manufacturing method of the same.01-24-2013
20080240190METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.10-02-2008
20080232414LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ASSEMBLY, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT ASSEMBLY - A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.09-25-2008
20080232413Multiple Phonon Resonance Quantum Cascade Lasers - Quantum-cascade lasers are provided with an active section in which relaxation of carriers from a lower laser level is provided by three or more phonon-assisted transitions to levels within the active section whose energies are below the energy of the lower laser level. The gain region of the laser consists of alternating active and injector sections, with an injection barrier inserted between each injector section and the adjacent active section, and an exit barrier inserted between each active section and the adjacent injector section. The active section comprises a sufficient number of quantum wells separated by quantum barriers to produce the desired energy-level structure consisting of an upper laser level, a lower laser level, and at least three levels that have lower energies than the lower laser level, with the separation of adjacent energy levels below and including the lower laser level that are at least equal to the energy of the quantum well material's longitudinal optical phonon.09-25-2008
20080225920SEMICONDUCTOR LASER DIODE APPARATUS AND METHOD OF FABRICATING THE SAME - A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.09-18-2008
20080225919Power Semiconductor Laser with Low Divergence and Low Astigmatism, and Method for the Production Thereof - The present invention relates to a high-power semiconductor laser having low divergence and low astigmatism, this laser being including, in an active layer, a first part in the form of a narrow monomode stripe with transverse index guiding terminating in a second part flaring out from the first part, also with transverse index guiding.09-18-2008
20080225918INDEX GUIDED SEMICONDUCTOR LASER WITH LOSS-COUPLED GRATINGS AND CONTINUOUS WAVEGUIDE - A system and a method of manufacture for a semiconductor laser with a continuous waveguide ridge extending the length of the laser. The continuous waveguide ridge is positioned through the center of the optical components of the semiconductor laser. The optical components including the waveguide ridge may be distributed Bragg reflectors (DBRs), outcoupling gratings, and phase controllers. The illustrated embodiments include lateral-grating grating-stabilized edge-emitting lasers and lateral-grating grating-stabilized surface-emitting (GSE) lasers. Both loss-coupled and non-loss-coupled lateral-grating components are illustrated.09-18-2008
20130142209SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements.06-06-2013
20080219309METHOD OF FABRICATING SEMICONDUCTOR LASER DIODE APPARATUS AND SEMICONDUCTOR LASER DIODE APPARATUS - A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.09-11-2008
20080219308Quantum cascade laser - A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures 09-11-2008
20130128909Edge-Emitting Semiconductor Laser - An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.05-23-2013
20130148681METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE - There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed.06-13-2013
20130156057SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.06-20-2013
20130156058LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a substantially cuboid package made up of a molded article and a lead that is embedded in the molded article, and a light emitting element that is installed in the package. The lead has a connector where the light emitting element is installed, and a terminal part and an exposed part that are linked to the connector. The package has a bottom face, a front face that is a light emission face contiguous with the bottom face, and a rear face that is contiguous with the bottom face and is opposite the front face. The first terminal part and the exposed part are linked to the rear face side of the connector are exposed from the molded article and contiguous with the bottom face and the rear face, and are isolated at the bottom face.06-20-2013
20130182733WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE - A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction.07-18-2013
20130188662SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.07-25-2013
20120287956SEMICONDUCTOR LASER - A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction.11-15-2012
20120093186NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND OPTICAL APPARATUS - This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film.04-19-2012
20130208748LASER DIODE WITH HIGH EFFICIENCY - It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.08-15-2013
20130208747SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In08-15-2013

Patent applications in class Injection

Patent applications in all subclasses Injection