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Semiconductor

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372 - Coherent light generators

372039000 - PARTICULAR ACTIVE MEDIA

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Class / Patent application numberDescriptionNumber of patent applications / Date published
372440010 Injection 1091
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DocumentTitleDate
20100074288SEMICONDUCTOR LASER DEVICE - A semiconductor laser device of the present invention includes a plurality of semiconductor laser elements for emitting a laser beam, a stem and a plurality of leads. The stem includes a base portion and a block portion for supporting the semiconductor laser elements. The base portion includes at least one opening. Each of the leads extends through the opening of the base portion and is electrically connected to a respective one of the semiconductor laser elements. Two or more of the leads extend through one opening while being spaced from each other. The opening is filled with an insulating material.03-25-2010
20100074287SEMICONDUCTOR LASER DEVICE - The present invention includes a semiconductor laser element, a lead, a first packaging member and a second packaging member. The lead includes a mount surface for supporting the semiconductor laser element. The first packaging member includes a first wall and a second wall. The first and the second walls are spaced from each other in a direction that is along the mount surface and crosses a laser beam emission direction of the semiconductor laser element, with the semiconductor laser element arranged between the first and the second walls. The second packaging member is pressed in between the first and the second walls and faces the mount surface and the semiconductor laser element.03-25-2010
20120183006OPTICAL DEVICE, LASER BEAM SOURCE, LASER APPARATUS AND METHOD OF PRODUCING OPTICAL DEVICE - After forming domain inverted layers 07-19-2012
20130039374Semiconductor Laser Light Source - In at least one embodiment of the semiconductor laser light source, the latter includes a carrier and at least two semiconductor lasers. The semiconductor lasers are mounted on a carrier top. The semiconductor laser light source furthermore includes at least one optical component, which is arranged downstream of at least one of the semiconductor lasers in a direction of emission. The semiconductor lasers and the optical component are housed tightly in a common enclosure by way of a cover. The dimensions of the enclosure, viewed in three orthogonal spatial directions, amount in each case to at most 8 mm×8 mm×7 mm.02-14-2013
20100067556DIODE LASER BARS AND METHOD FOR THE PRODUCTION THEREOF - There is provided a method for the production of diode laser bars from a wafer, wherein a metal layer is applied to the wafer in such a way that it does not extend up to the later facets of the diode laser bars to be separated, the diode laser bars are separated and stacked one atop another, the metal layer producing a gap between the facets of the stacked diode laser bars and the metal layer being selected in such a way that clogging of the gap during coating of a facet is prevented.03-18-2010
20130070797LASER UNIT WITH SUPPRESSED FEEDBACK - Laser unit, preferably for gas detection, with a semiconductor laser chip comprising an output mirror with an exit zone for a laser beam and an optical element that reduces self-mixing which is arranged at the exit zone, wherein optical element and laser chip are connected with each other with direct physical contact over an entire surface, at least in the exit zone. Said optical element is connected to the laser chip positively or by means of an optical medium. Thereby optionally a beam-shaping element may be arranged on the optical element that is connected positively or by means of an optical medium with the optical element. Preferably beam-shaping element and optical element have similar or identical refractory indices and are connected with each other and with the laser chip by adhesive agents having corresponding refractory indices.03-21-2013
20090268768METHOD OF MAKING NITRIDE SEMICONDUCTOR LASER, METHOD OF MAKING EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR LASER - A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.10-29-2009
20130064260LIGHT EMITTING DEVICE - Broad light emission is provided and additionally heat conductivity is increased to improve reliability. A light emitting device comprises a light emitting element, a pair of conductor members, a transparent board and a transparent member. The conductor members are spaced away from each other at an interval in a side-surface direction of the light emitting element and are electrically connected to the light emitting element. The transparent board supports the light emitting element and the pair of conductive members. The transparent member is located on the transparent board and seals the light emitting element and the pair of conductor members. The pair of conductor members are provided with a pair of metal plates that are secured thereon. The pair of metal plates project from the transparent member in directions different from each other.03-14-2013
20090034567METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.02-05-2009
20100085995Transistor laser devices and methods - A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.04-08-2010
20090323747ORGANIC SOLID-STATE DYE LASER - An organic solid-state dye laser (12-31-2009
20100034227INFRARED IMAGING USING MULTIPLE WAVELENGTHS - For an infrared imaging catheter, means of achieving a spread of wavelengths or multiple wavelengths through a stacking arrangement of “monochromatic” laser diodes or LED's are disclosed. Since a stack of diodes or LED's have different temperatures, they produce a wavelength spread many times greater than a single laser diode or LED. The wavelength spread reduces speckle in the corresponding image. Adding wavelengths also improves the corresponding infrared image, since different wavelengths have different light penetration capabilities and can emphasize different biological entities.02-11-2010
20110128980COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE - The present invention provides a method of manufacturing a compound semiconductor device capable of improving yield when a wafer is divided into device regions. The method of manufacturing a compound semiconductor device includes a division step. The division step includes: a first division step of dividing a wafer 06-02-2011
20110280266SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer.11-17-2011
20090310638SEMICONDUCTOR LASER DEVICE - In a semiconductor laser device, a first lead has a mounting portion for mounting a semiconductor laser element on its top surface via a submount member, and a lead portion extending from the mounting portion. Given that a direction in which a primary beam is emitted from the laser element is defined as a forward direction, and that a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and flat. In the one region of the side face of the mounting portion, a recess portion is formed adjacent to the lateral reference surface.12-17-2009
20100195683CURVED COUPLED WAVEGUIDE ARRAY AND LASER - A semiconductor laser that includes an active region, claddings and electrical contacts to stimulate emissions from the active region, where a coupled waveguide guides emission. The waveguide includes a broad area straight coupling region that fans out into an array of narrower Individual curved coupled waveguides at an output facet of the laser. The individual curved coupled waveguides are curved according to Lorentzian functions that define the waveguide curvature as a function of position along the device. The integral length of each individual curved coupled waveguide differs from adjacent individual curved coupled waveguides by an odd number of half- wavelengths. The coupled waveguide array shapes the optical field output of the semiconductor laser such that a large fraction of the power is emitted into a small angular distribution using interference phenomena. A laser of the invention produces high power output with a very high quality, narrow beam shape.08-05-2010
20090274186SURFACE-EMITTING TYPE SEMICONDUCTOR LASER - A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n11-05-2009
20090041074Passivation of Vertical Cavity Surface Emitting Lasers - A vertical cavity surface emitting laser including a substrate, a plurality of epitaxial layers formed on the substrate as an epitaxial stack, and a passivation layer at least partly covering the epitaxial stack including a plurality of sublayers at least some of which are composed of different materials. The composition and thicknesses of the sublayers are chosen to minimise the overall stress of the passivation layer and thereby to increase a mean time before the vertical surface emitting laser fails.02-12-2009
20100111124PUMPED SEMICONDUCTOR LASER SYSTEMS AND METHODS - A method for emitting laser radiation includes: emitting first laser radiation using a first laser, wherein said first laser is a laser diode; receiving the first laser radiation by a second laser comprising CdSe05-06-2010
20080240188Semiconductor laser chip and method of formation thereof - A method for forming a semiconductor laser chip is provided that can suppress layer discontinuity and simultaneously reduce fabrication variations in the light radiation angle in the horizontal direction. The method includes a step of forming, on an n-type GaAs substrate, a semiconductor element layer composed of a plurality of semiconductor layers including an etching marker layer, a step of forming, in a contact layer in the semiconductor element layer, a depressed portion having a depth not reaching the etching marker layer, and a step of forming a ridge portion by etching the semiconductor element layer by dry etching while monitoring, with laser light, the etching depth in the bottom region of the depressed portion.10-02-2008
20080240187SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.10-02-2008
20080240189SEMICONDUCTOR LASER - A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.10-02-2008
20090161711Nitride semiconductor laser diode - A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Al06-25-2009
20090080481Semiconductor Device with Corner Reflector - A semiconductor laser device (03-26-2009
20110142088PHOTON PAIR SOURCE AND METHOD FOR ITS PRODUCTION - The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational behaviour of the photon pair source is determined by adjusting the fine structure splitting of the excitonic energy level of the at least one quantum dot. It is provided according to the invention for the fine structure splitting of the excitonic energy level to be adjusted by depositing the at least one quantum dot on a {111} crystal surface of a semiconductor substrate.06-16-2011
20090122822Semiconductor device having trench extending perpendicularly to cleaved plane and manufacturing method of the same - A method for manufacturing a semiconductor device includes setting cut lines in parallel to a normal direction of a (1-100) plane orthogonal to the principal plane and in parallel to a normal direction of a (11-20) plane orthogonal to the (1-100) plane; forming, along the cut line parallel to the normal direction of the (1-100) plane, a trench from the principal plane of the semiconductor layer to a midpoint of a boundary plane between the semiconductor layer and the substrate; and cutting the wafer along the cut lines to divide the wafer into the plurality of semiconductor device where four side faces which are nonpolar planes orthogonal to the principal plane are set adjacent to the principal plane.05-14-2009
20100158062Adapted Semiconductor Laser Package - An adapted semiconductor laser package that may convert a first type of package pin-out arrangement to a desired pin-out arrangement. The laser package may include a laser package including a laser, an isolator, a lens, a fiber sleeve, and a pin-out arrangement. The isolator and the fiber sleeve may be jointly arranged away from the laser. The laser package may also include an adapter with a first section with a plurality of holes geometrically arranged and mated with the package pin-out arrangement, a second section with an adapter pin-out arrangement with two rows of pins extending along opposite sides of the package, and electrical connections between the plurality of holes and the pins.06-24-2010
20120033696SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a package having sealed space inside and a semiconductor laser chip arranged in the sealed space. The package has a first member and a second member bonded to each other with an adhesive, a covering agent made of an ethylene-vinyl alcohol copolymer is formed on a bonded region of the first member and the second member in the sealed space, and the adhesive is covered with the covering agent.02-09-2012
20120033695SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer.02-09-2012
20100189146METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER DEVICE AND LIGHT APPARATUS - A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.07-29-2010
20100226400FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS - A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.09-09-2010
20090323746Nitride Semiconductor Laser and Method for Fabricating Same - In one embodiment of the present invention, in a method of fabricating a nitride semiconductor laser device, after an insulating film is formed on a layered nitride semiconductor portion on a substrate, a resist mask is formed on the insulating film, such that the insulating film is exposed near a position where an exit-side cleaved facet and a reflection-side cleaved facet are formed. The insulating film near a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed is then removed, and, after the resist mask is removed, cleavage is performed. As a result, even if the substrate and the layered nitride semiconductor portion are cleaved at a position where the exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulating film is not broken. This helps prevent fragments produced from the insulating film from being adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.12-31-2009
20110032964FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS - A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.02-10-2011
20100296537OPTICAL COMPONENT AND METHOD OF MANUFACTURING THEREOF - An optical component includes a supporter and a semiconductor laser device. The supporter has a metal wiring layer formed over the substrate and a fusing metal layer formed on the metal wiring layer. The semiconductor laser device includes an electrode and stacked semiconductor films including an active layer. A protrusion is formed on one of the supporter and the semiconductor laser device, and the end face of the protrusion is in area contact with the other one of these components. The metal wiring layer and the electrode are integrated with each other via the fusing metal layer, at a location different from the protrusion.11-25-2010
20100322275WHITE LIGHT-EMITTING LAMP AND ILLUMINATING DEVICE USING THE SAME - A white light-emitting lamp (12-23-2010
20100260222Semiconductor layer, method of manufacturing the same, laser diode, and method of manufacturing the same - A method of manufacturing a semiconductor layer with which inactivation of impurity is able to be inhibited by a simple method, a semiconductor layer in which inactivation of impurity is inhibited, a method of manufacturing a laser diode with which inactivation of impurity is able to be inhibited by a simple method, and a laser diode including a semiconductor layer in which inactivation of impurity is inhibited are provided. In the method of manufacturing a semiconductor layer, after a semiconductor layer is formed by epitaxial growth with the use of AsH10-14-2010
20090201960THREE-DIMENSIONAL PHOTONIC CRYSTAL LIGHT EMITTING DEVICE - The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.08-13-2009
20090310637SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME - A convex-portion forming layer is formed between a current-confinement aperture and a multilayer mirror, and forms a convex portion on each boundary between layers forming the multilayer mirror. The convex portion includes a plane equal to or larger than a spot size of the laser light, where the spot size is decided by a diameter of the current-confinement aperture, a predetermined diffraction angle of the laser light due to the current-confinement aperture, and a distance from the current-confinement aperture.12-17-2009
20090213887Semiconductor laser and method of manuracture - The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterised in that the slot is substantially filled with a reflective material having a large imaginary index relative to the laser cavity material. The interfaces of the slot may be inclined or may have a step for introducing a quarter wave phase shift.08-27-2009
20110080928LASER DEVICE - To provide a laser device having high strength against mechanical stress. The laser device includes: a laser element; a plate-like lead frame including through-holes, and on whose front plane the laser element is mounted; lead terminals; trenches provided between an end of the lead frame in a laser emission direction of the laser element and the through-holes; and a resin dam formed on the front plane of the lead frame using a molding resin to protrude in an area surrounding the laser element including positions of the through-holes, and having an open part in the laser emission direction. The molding resin further fills the through-holes and the trenches, and bonds the lead frame and the resin dam by sealing together a part of each of the lead terminals and a part of the front plane and the back plane of the lead frame, in a vicinity of the lead terminals.04-07-2011
20110026553ORGANIC LASER - A device is provided. The device includes a first organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first electrode and the second electrode. The device also includes a first laser device, which further comprises an optical cavity and an organic lasing material disposed within the optical cavity. A focus mechanism is disposed to focus light emitted by the first organic light emitting device onto the first laser device. Preferably, the focus mechanism provides light incident on the first laser device at least 10 times greater, and more preferably at least 100 times greater, in intensity than the light emitted by the first organic light emitting device.02-03-2011
20090022191METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LASER ELEMENT AND A NITRIDE SEMICONDUCTOR LASER ELEMENT - A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the island layer, and an auxiliary groove provided along an end face of the cavity, and with which the cavity end face is obtained by dividing the laminate and the substrate along the first auxiliary groove, the method comprises a step of: forming the laminate over the substrate; removing part of the laminate to separate the laminate into the element region and the island layer and to form the exposed region provided continuously in the cavity direction of the nitride semiconductor laser element; forming the first auxiliary groove so as to be adjacent to the island layer; and dividing so that the island layer is disposed in a corner of the nitride semiconductor laser element to obtain a nitride semiconductor laser element.01-22-2009
20110158273SEMICONDUCTOR LASER DEVICE, OPTICAL PICKUP DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.06-30-2011
20080291958SEMICONDUCTOR LASER DEVICE - In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.11-27-2008
20100329294Nitride semiconductor laser device and wafer - Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.12-30-2010
20110261848OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1010-27-2011
20100215070MULTIWAVELENGTH OPTICAL DEVICE AND MANUFACTURING METHOD OF MULTIWAVELENGTH OPTICAL DEVICE - A multiwavelength optical device includes a substrate; a first mirror section including a plurality of first mirror layers stacked on the substrate; an active layer stacked on the first mirror section, the active layer including a light emission portion; a second mirror section including a plurality of second mirror layers stacked on the active layer; a first electrode disposed between the active layer and the second mirror section; and a second electrode disposed between the first mirror section and the active layer.08-26-2010
20120147915LASER DIODE AND METHOD OF FABRICATION THE LASER DIODE - The laser diode is based on Al In Ga N alloy and consists of: a bottom cladding layer of n-type conductivity, a bottom waveguide layer of n-type conductivity, a light emitting layer, an electron blocking layer of p-type conductivity, an upper waveguide layer of p-type conductivity, an upper cladding layer of p-type conductivity and a subcontact layer, doped with acceptors with concentration level above 1006-14-2012
20120002693NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 01-05-2012
20120002692Surface-emitting laser light source using two-dimensional photonic crystal - The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer created from a plate-shaped matrix body in which a large number of holes are periodically arranged and an active layer arranged on one side of the two-dimensional photonic crystal layer, the holes are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer, the surface-emitting laser source using a two-dimensional photonic crystal has a Q01-05-2012
20110007763METHOD OF MAKING NITRIDE SEMICONDUCTOR LASER, METHOD OF MAKING EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR LASER - A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.01-13-2011
20120314725OPTICAL DEVICE, MODULATOR MODULE, AND METHOD FOR MANUFACTURING THE OPTICAL DEVICE - An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.12-13-2012
20120128016III-NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.05-24-2012
20090059982Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles - A radiation-emitting device includes a nanowire that is structurally and electrically coupled to a first electrode and a second electrode. The nanowire includes a double-heterostructure semiconductor device configured to emit electromagnetic radiation when a voltage is applied between the electrodes. A device includes a nanowire having an active longitudinal segment selectively disposed at a predetermined location within a resonant cavity that is configured to resonate at least one wavelength of electromagnetic radiation emitted by the segment within a range extending from about 300 nanometers to about 2,000 nanometers. Active nanoparticles are precisely positioned in resonant cavities by growing segments of nanowires at known growth rates for selected amounts of time.03-05-2009
20090323748Photoelectric conversion device, photoelectric conversion module and method of manufacturing photoelectric conversion device - A photoelectric conversion device includes a circuit substrate that has a first concave portion having a light transmission hole, a first metal interconnection that is formed from a bottom of the first concave portion to a face of the circuit substrate where the first concave portion is formed, an optical element that is arranged in the first concave portion so that an optical axis thereof passes through the light transmission hole and is flip-chip bonded to the first metal interconnection on the bottom of the first concave portion, and a circuit chip that is a driver circuit chip for driving the optical element or an amplifier circuit chip for amplifying a signal from the optical element and is flip-chip bonded to the first metal interconnection of the face where the first concave portion is formed.12-31-2009
20120230357GAN LASER ELEMENT - In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.09-13-2012
20110122907Edge Emitting Semiconductor Laser Having a Phase Structure - An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.05-26-2011
20100232464MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER - A method of manufacturing a semiconductor device including a semiconductor layer and a dielectric layer deposited on the semiconductor layer, including: forming the semiconductor layer; performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed; forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed; and changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed.09-16-2010
20110249694SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.10-13-2011
20100202482Semiconductor device - The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.08-12-2010
20110261847LIGHT EMITTING DEVICES - A light emitting device includes a number of light emitting chips, a substrate to support the light emitting chips, a patterned first conductive layer over the substrate to facilitate radiation and reflection of light from the light emitting chips, and a patterned second conductive layer on the patterned first conductive layer, wherein the light emitting chips are located on the patterned second conductive layer.10-27-2011
20090219966LASER DIODE WITH IMPROVED HEAT DISSIPATION - A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.09-03-2009
20080198885LOW CREEP METALLIZATION FOR OPTOELECTRONIC APPLICATIONS - A metallization on a semiconductor substrate is disclosed in the form of a laminate comprising a plurality of layers of a “conducting” metallization for providing electrical conductivity, interspersed with a plurality of layers of another metallization. By providing many layers the thickness of each individual layer can be reduced. Reduction in thickness of each layer leads to a reduction in grain size and a consequent reduction in creep over the lifetime of a device.08-21-2008
20100316074SEMICONDUCTOR LASER - A semiconductor laser includes a semiconductor laser region and a wavelength-monitoring region. The semiconductor laser region includes a first optical waveguide that includes a gain waveguide, the first optical waveguide having one end and another end opposite the one end. The wavelength-monitoring region includes a second optical waveguide that is optically coupled to the first optical waveguide with the one end therebetween, and a photodiode structure that is optically coupled to the second optical waveguide. In the wavelength-monitoring region, the second optical waveguide is branched into three or more optical waveguides, and at least two optical waveguides among the three or more optical waveguides form first ring resonators having optical path lengths different from each other.12-16-2010
20130195134SEMICONDUCTOR LASER DEVICE - A semiconductor laser device having stable heat dissipation property is provided. The semiconductor laser device includes a semiconductor laser element, a mounting body on which the semiconductor laser element is mounted, and a base body connected to the mounting body. The base body has a recess configured to engage with the mounting body and a through portion penetrating through a part of a bottom of the recess. In the specification, the remainder, which is a part of the bottom of the recess except for the through portion has a thickness equal or less than half of the largest thickness of the base body. The lowermost surface of the mounting body is spaced apart from the lowermost surface of the base body through the remainder.08-01-2013
20120093185METHOD FOR MANUFACTURING SEMICONDUCTOR LASER APPARATUS, SEMICONDUCTOR LASER APPARATUS, AND OPTICAL APPARATUS - This method for manufacturing a semiconductor laser apparatus includes steps of forming a first semiconductor laser device having a first electrode, forming a second semiconductor laser device having a second electrode, forming a first solder layer with a first melting point through a first barrier layer on a third electrode, forming a second solder layer with a second melting point through a second barrier layer on a fourth electrode, bonding the first electrode to the third electrode through a first reaction solder layer, a melting point of which rises to a third melting point higher than the second melting point by reacting the first electrode with the first solder layer, and bonding the second electrode to the fourth electrode by applying heat of a first heating temperature to melt the second solder layer with the second melting point after the step of bonding the first electrode to the third electrode.04-19-2012

Patent applications in class Semiconductor

Patent applications in all subclasses Semiconductor