Class / Patent application number | Description | Number of patent applications / Date published |
365490110 | Flip-Flop | 10 |
20100165690 | SEGMENTED TERNARY CONTENT ADDRESSABLE MEMORY SEARCH ARCHITECTURE - A segmented ternary content addressable memory (TCAM) search architecture is disclosed. In one embodiment, a TCAM device with a row of TCAM cells includes a first segment of the TCAM cells for determining a match of corresponding search bits of a search string with a first portion of a stored string in the first segment of the TCAM cells, an evaluation module for generating a search enable signal if the match of the corresponding search bits with the first portion of the stored string is determined, and a second segment of the TCAM cells for determining a match of remaining search bits of the search string with a remaining portion of the stored string in response to the search enable signal. | 07-01-2010 |
20100182815 | CONTENT ADDRESSABLE MEMORY - For receiving an input data, a pattern data and a data clock signal and outputting a hit signal and an address signal, a content addressable memory is disclosed to include a plurality of content addressable memory units connected in series, each content addressable memory unit being adapted to receive the input data and the data clock signal and to output a comparison result signal, and an encoder coupled to the comparison result signal of each content addressable memory unit and adapted for outputting a hit signal and a memory address signal subject to the comparison result signal received. | 07-22-2010 |
20110096582 | CONTENT ADDRESSABLE MEMORY WITH CONCURRENT TWO-DIMENSIONAL SEARCH CAPABILITY IN BOTH ROW AND COLUMN DIRECTIONS - A content addressable memory (CAM) device includes an array of memory cells arranged in rows and columns; compare circuitry configured to indicate match results of search data presented to each row of the array; and compare circuitry configured to indicate match results of search data presented to each column of the array, thereby resulting in a two-dimensional search capability of the array. | 04-28-2011 |
20130135914 | XY TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) CELL AND ARRAY - A ternary content addressable memory (TCAM) is formed by TCAM cells that are arranged in an array. Each TCAM cell includes a first and second SRAM cells and a comparator. The SRAM cells predominantly in use have a horizontal topology with a rectangular perimeter defined by longer and shorter side edges. The match lines for the TCAM extend across the array, and are coupled to TCAM cells along an array column. The bit lines extend across the array, and coupled to TCAM cells along an array row. Each match line is oriented in a first direction (the column direction) that is parallel to the shorter side edge of the horizontal topology layout for the SRAM cells in each CAM cell. Each bit line is oriented in a second direction (the row direction) that is parallel to the longer side edge of the horizontal topology layout for the SRAM cells in each CAM cell. | 05-30-2013 |
20130322145 | ROIC Control Signal Generator - A control signal generator to generate control signals for a readout integrated circuit (ROIC) includes a content addressable memory (CAM) and a random access memory (RAM). The CAM may have data stored within it that is indicative of times at which control signal switching events are to occur during generation of the control signals. The RAM may have data stored within it that is indicative of particular control signals that are to be toggled at the times indicated within the CAM. | 12-05-2013 |
20140192579 | TWO PHASE SEARCH CONTENT ADDRESSABLE MEMORY WITH POWER-GATED MAIN-SEARCH - Low leakage CAMs and method of searching low leakage CAMs. The method includes performing a pre-search and compare on a small number of pre-search bits with pre-search CAM cells powered to normal voltage levels at all times while the main-search CAM cells are powered to a lower voltage level. Only if a match is detected on the pre-search bits are the main-search CAM cells powered-up to normal voltage levels and the search of the main-search bits activated. The main-search CAM cells are powered to normal voltage levels during read and write operations. | 07-10-2014 |
20140328103 | IMPLEMENTING COMPUTATIONAL MEMORY FROM CONTENT-ADDRESSABLE MEMORY - A content-addressable memory (CAM) with computational capability is described. The CAM includes an array of CAM cells arranged in rows and columns with a pair of search lines associated with each column of the array and a match line associated with each row of the array. The array of CAM cells is configured to implement, for a given cycle, either a read operation of data contained in a single selected column, or one of a plurality of different bitwise logical operations on data contained in multiple selected columns. All of the pairs of search lines in the columns of the array are configured to a certain state to implement the read operation or one of the plurality of different bitwise logical operations. A result of the read operation or one of the plurality of different bitwise logical operations is outputted onto all of the match lines in the array. | 11-06-2014 |
20150085554 | STATIC NAND CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) - A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor. | 03-26-2015 |
20160005465 | CONTENT ADDRESSABLE MEMORY - The present invention provides a content addressable memory capable of higher frequency operation than conventional. When a search enable signal supplied from a search control circuit is asserted, each of search line drivers transfers search data to each CAM cell of a CAM memory array via a search line pair. The search line enable signal is transmitted to the search line drivers via a single control signal line coupled to the search control circuit. The control signal line is coupled to the search line drivers in such a manner that the search line enable signal passes through coupling nodes between the search line drivers and the control signal line in an arrangement order of the search line drivers from the side far away as viewed from match amplifiers. | 01-07-2016 |
20160172038 | CONVERTING AN XY TCAM TO A VALUE TCAM | 06-16-2016 |