Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Reference signal (e.g., dummy cell)

Subclass of:

365 - Static information storage and retrieval

365185010 - FLOATING GATE

365185180 - Particular biasing

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
365185220 Verify signal 254
365185210 Sensing circuitry (e.g., current mirror) 149
Entries
DocumentTitleDate
20110199820NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES - A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.08-18-2011
20090201724MEMORY DEVICE AND METHOD THEREOF - A device and corresponding method of using a temperature dependent bias generator to generate a voltage that is applied to a control gate of a sense amplifier is disclosed. By applying the temperature dependent bias signal to the sense amplifier, a substantially temperature independent disclosing time can be achieved at a sense node of a sense amplifier.08-13-2009
20090323413VOLTAGE REFERENCE GENERATOR FOR FLASH MEMORY - There is disclosed example embodiments of flash memory including reference generators using big flash memory cells to generate flash array wordline voltages, wherein the reference voltage values can be trimmed by changing the threshold voltage of the flash cells. In addition, the inventive subject matter provides for using the matching characteristics of two source followers in closed loop and open loop to achieve fast stabilization times. Further, the temperature characteristics of the wordline voltages track the temperature characteristics of the array flash cells. Still further, the disclosed reference generators use cascoding reference generators to provide more reliability and accuracy.12-31-2009
20110194345NONVOLATILE SEMICONDUCTOR STORAGE DEVICE INCLUDING FAILURE DETECTION CIRCUIT AND METHOD OF DETECTING FAILURE ON NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - A nonvolatile semiconductor storage device includes: a word line; a reading circuit; and a failure detection circuit. The word line is connected to gates of a plurality of nonvolatile memory cell transistors. The reading circuit is connected to one end of the word line and supplies one of a reading selection voltage and a reading non-selection voltage to the word line. The failure detection circuit is connected to the other end of the word line and detects a voltage of the word line supplied with the one of the reading selection voltage and the reading non-selection voltage by comparing the voltage with a plurality of reference voltages.08-11-2011
20090059661SEQUENCE DETECTION FOR FLASH MEMORY WITH INTER-CELL INTERFERENCE - A memory integrated circuit (IC) includes a read module and a sequence detector module. The read module reads S memory cells (cells) located along one of a bit line and a word line and generates S read signals, where S is an integer greater than 1. The sequence detector module detects a data sequence based on the S read signals and reference signals. The data sequence includes data stored in the S cells. Each of the reference signals includes an interference-free signal associated with one of the S cells and an interference signal associated with another of the S cells that is adjacent to the one of the S cells.03-05-2009
20130077399SYSTEM, SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A method for operating a semiconductor memory device including a memory block constituted by first memory cells used as main memory cells and second memory cells includes reading out an erase count of the memory block stored in the second memory cells, erasing the memory block, increasing the read-out erase count, and storing the increased erase count in the second memory cells.03-28-2013
20100046290FLASH MEMORY DEVICE AND MEMORY SYSTEM - A flash memory device includes a first switch connecting one of a first cell string and a second cell string to a first bit line selectively, a second switch connecting the second cell string to a second bit line, and a control logic circuit providing bias voltages to the first and second cell strings through the first and second bit lines respectively and controlling the first and second cell stings to be simultaneously programmed.02-25-2010
20100046289METHOD OF READING NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of reading a nonvolatile memory device may include, after an n02-25-2010
20090190395NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a nonvolatile semiconductor memory device which can enhance a stable control of a voltage applied to a memory cell and has excellent capability of controlling a drain voltage. The nonvolatile semiconductor memory device includes: a plurality of memory cells; a write buffer receiving data to be written to the plurality of memory cells; a count circuit searching data input to the write buffer and determining bit number of data to be simultaneously programmed to the plurality of memory cells; a write circuit supplying a write voltage to the plurality of memory cells according to the data; and a voltage regulator supplying a control voltage (Vpb) to the write circuit, wherein the voltage regulator includes a controller Counting write bit number and supplying the control voltage (Vpb) according to the counted write bit number.07-30-2009
20090175074DEVICE FOR READING A LOW-CONSUMPTION NON-VOLATILE MEMORY AND ITS IMPLEMENTING METHOD - The reading device enables a non-volatile memory consisting of a matrix of memory cells (T07-09-2009
20130083598Method of Programming Nonvolatile Memory - Each memory cell of a plurality of memory cells of a memory has a well, source and drain regions, a storage layer, and a gate. The memory cells are in a matrix. Same column drain regions connect to the same bit line, same row gates connect to the same word line, and same column source regions connect to the same source line. The memory is programmed by applying a first voltage to a word line electrically connected to a memory cell of the plurality of memory cells, applying a second voltage different from the first voltage by at least a programming threshold to a bit line electrically connected to the memory cell, applying a third voltage different from the first voltage by at least the programming threshold to a source line electrically connected to the memory cell, and applying a substrate voltage to the plurality of memory cells.04-04-2013
20130083597SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes first and second select transistors, memory cells, a driver circuit, first transfer transistors, and a detection circuit. The memory cells are stacked above a semiconductor substrate. The driver circuit outputs a first voltage. The first transfer transistors transfer the first voltage to associated word lines and select gate lines. In data erase, the detection circuit detects a second voltage applied to bit lines and/or a source line and generates a flag in accordance with the detection result. The driver circuit changes the value of the first voltage in response to the flag to cut off the first transfer transistors.04-04-2013
20100321996SEMICONDUCTOR DEVICE AND METHOD FOR ADJUSTING REFERENCE LEVELS OF REFERENCE CELLS - A semiconductor device includes a first reference cell used for programming or reading non-volatile memory cells, and an adjustment circuit adjusting a first reference level of the first reference cell when the first reference level is changed.12-23-2010
20120188820SYSTEM AND METHOD FOR ADDRESSING THRESHOLD VOLTAGE SHIFTS OF MEMORY CELLS IN AN ELECTRONIC PRODUCT - Methods and systems for addressing threshold voltage shifts of memory cells. A method includes reading a pattern of data from a first plurality of memory cells, comparing the read of the pattern of data with a known pattern of data using a reference, and if the read of the pattern of data and the known pattern of data do not match, adjusting the reference to find a reference level that results in a matching of a read of the pattern of data and the known pattern of data. Thereafter, trim sector data is read into a second plurality of memory cells using the adjusted reference level.07-26-2012
20100124107NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device includes a first plane and a second plane, an address decoder configured to decode an externally input address and to output a first plane select signal and a second plane select signal for enabling any one of the first and second planes, a controller configured to output a first plane hold signal and a second plane hold signal for disabling any one of the first and second planes depending on program states of the first plane and the second plane, a first plane control unit configured to enable the first plane in response to a first plane select signal and the first plane hold signal, and a second plane control unit configured to enable the second plane in response to a second plane select signal and the second plane hold signal.05-20-2010
20090237991System for Operating a Memory Device - A system for operating a memory device comprises a memory array having a number of memory cells and a set of dynamic reference cells coupled to the memory cells in word lines. Each of the dynamic reference provides the associated memory cells with a dynamic reference value for determining a status of at least one of the associated memory cells. The dynamic reference value is capable of reflecting a variation in a threshold value of at least one of the associated memory cells.09-24-2009
20090046505FLASH MEMORY DEVICES AND OPERATING METHODS THAT CONCURRENTLY APPLY DIFFERENT PREDETERMINED BIAS VOLTAGES TO DUMMY FLASH MEMORY CELLS THAN TO REGULAR MEMORY CELLS DURING ERASE - Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described.02-19-2009
20090027957VOLTAGE SUPPLY CIRCUIT AND FLASH MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF SUPPLYING OPERATING VOLTAGE - A voltage supply circuit includes a voltage generator and a controller. The voltage generator is configured to pump an externally input voltage and store the pumped external voltage as a first voltage having a set voltage level, before power-up begins, or pump the external voltage, add the pumped voltage to the stored voltage, and output the added voltage as an operating voltage. The controller is configured to output a first control signal to drive the voltage generator or stop operation of the voltage generator, according to an operating state.01-29-2009
20120113713Methods of Operating a Memory Device Having a Buried Boosting Plate - Memory devices are disclosed, such as those that include a semiconductor-on-insulator (SOI) NAND memory array having a boosting plate. The boosting plate may be disposed in an insulator layer of the SOI substrate such that the boosting plate exerts a capacitive coupling effect on a p-well of the memory array. Such a boosting plate may be used to boost the p-well during program and erase operations of the memory array. During a read operation, the boosting plate may be grounded to minimize interaction with p-well. Systems including the memory array and methods of operating the memory array are also disclosed.05-10-2012
20080304316SENSING WITH BIT-LINE LOCKOUT CONTROL IN NON-VOLATILE MEMORY - In sensing a group of cells in a multi-state nonvolatile memory, multiple sensing cycles relative to different demarcation threshold levels are needed to resolve all possible multiple memory states. Each sensing cycle has a sensing pass. It may also include a pre-sensing pass or sub-cycle to identify the cells whose threshold voltages are below the demarcation threshold level currently being sensed relative to. These are higher current cells which can be turned off to achieve power-saving and reduced source bias errors. The cells are turned off by having their associated bit lines locked out to ground. A repeat sensing pass will then produced more accurate results. Circuitry and methods are provided to selectively enable or disable bit-line lockouts and pre-sensing in order to improving performance while ensuring the sensing operation does not consume more than a maximum current level.12-11-2008
20110141807SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR - A semiconductor device includes an insulation layer (06-16-2011
20120236636NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device according to an embodiment includes a memory cell array and a control circuit configured to execute a read operation. The control circuit refers to data of a reference memory cell which is adjacent to a selected memory cell and in which data is written after a data write operation on the selected memory cell. The control circuit applies a first read pass voltage to a non-selected word line adjacent to the selected word line, when the data of the reference memory cell is data causing the shift of the threshold voltage of the selected memory cell. The control circuit applies a second read pass voltage lower than the first read pass voltage to the non-selected word line, when the data of the reference memory cell is data not causing the shift of the threshold voltage of the selected memory cell.09-20-2012
20130163326Nonvolatile Memory Device and Program Method Thereof - Methods of operating nonvolatile memory devices are described. A bit line program voltage is applied to at least one selected bit line and a bit line program-inhibition voltage is applied to at least one unselected bit line. The methods further include concurrently applying a word line program voltage to a selected word line, a first pass voltage to at least one unselected word line and a second pass voltage less than the first pass voltage to at least one unselected word line immediately adjacent the selected word line on a string selection line side of the selected word line.06-27-2013
20130163328INTER-CELL INTERFERENCE ALGORITHMS FOR SOFT DECODING OF LDPC CODES - Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell. A data storage system and article of manufacture are also provided.06-27-2013
20110157977FTP MEMORY DEVICE WITH SINGLE SELECTION TRANSISTOR - An embodiment of a non-volatile memory device integrated in a chip of semiconductor material is proposed. The memory device includes a plurality of memory cells. Each memory cell includes a first well and a second well of a first type of conductivity that are formed in an insulating region of a second type of conductivity. The memory cell further includes a first, a second, and a third region of the second type of conductivity that are formed in the first well; these regions define a selection transistor of MOS type and a storage transistor of floating gate MOS type that are coupled in series. Moreover, the memory device includes a selection gate of the selection transistor, a floating gate of the storage transistor, and a control gate of the storage transistor formed in the second well; the control gate is capacitively coupled with the floating gate. An embodiment, the memory device further includes means for applying a first programming voltage to the first wells and a second programming voltage to the control gates of a subset of the memory cells including at least one memory cell to be programmed (with a difference between the first programming voltage and the second programming voltage that is capable of injecting electric charge into the floating gate of each memory cell to be programmed), for applying the first programming voltage to the third region of each memory cell to be programmed, and for applying a third programming voltage (3.5V) comprised between the first programming voltage and the second programming voltage to the third region of each memory cell of the subset not to be programmed (with a difference between the first programming voltage and the third programming voltage that inhibits the injection of electric charge into the corresponding floating gate).06-30-2011
20100014348Circuit, System, and Method for Programming a Floating Gate - The invention provides circuits, systems, and methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.01-21-2010
20110280067NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME AND PROGRAMMING METHOD THEREOF - A non-volatile memory device which includes a sensing mode selector configured to select a sensing mode according to environment information. A page buffer senses a data state of a memory cell in one of a plurality of sensing methods, depending upon the selected sensing mode.11-17-2011
20110261617SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY BLOCK CONFIGURATION - A memory array including memory mats is arranged in a U shape when seen in two dimensions, and a logic circuit and an analog circuit are arranged in a region unoccupied by the memory array. This facilitates transmission of power supply voltage and signals between the peripheral circuit including the analog and logic circuits and the pad band including power supply and data pads. The analog circuit is positioned close to the power supply pad, so that voltage drop due to the resistance of power supply interconnection is restricted. It is also possible to separate a charge pumping power supply interconnection and a peripheral circuit power supply interconnection in the vicinity of the power supply pad.10-27-2011
20110128783METHOD OF READING NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A method of reading a nonvolatile memory device may include, after an n06-02-2011
20110299332TEST SYSTEM AND HIGH VOLTAGE MEASUREMENT METHOD - Provided are a test system and a related high voltage measurement method. The method includes applying an external voltage signal to one or more of a plurality of DUTs via the shared channel, comparing the external voltage signal with a high voltage signal internally generated by the one or more DUTs and generating a corresponding comparison result, and determining a voltage level for each respective high voltage signal in accordance with the comparison result.12-08-2011
20080310221Reference current sources - Systems, methods, and devices are disclosed, including an electronic device that includes a first data location, a quantizing circuit, and a reference current source, all coupled to an electrical conductor. The reference current source may include a current mirror with a side coupled to the electrical conductor and a second data location coupled to another side of the current mirror.12-18-2008
20100271872ANALOG READ AND WRITE PATHS IN A SOLID STATE MEMORY DEVICE - A memory array in a memory device is coupled to an analog I/O data interface that enables analog voltage levels to be written to the memory array. The I/O interface comprises a plurality of analog data paths that each includes a capacitor for storing charge corresponding to a target voltage to which a selected memory cell, coupled to its respective data path, is to be programmed. A plurality of comparators can be included in the I/O interface, with each such comparator coupled to a respective bit line. Such a comparator can compare a threshold voltage of a selected memory cell to its target voltage and inhibits further programming when the threshold voltage equals or exceeds the target voltage.10-28-2010
20110205792MEMORY DEVICE REFERENCE CELL PROGRAMMING METHOD AND APPARATUS - Memory devices and methods are disclosed, such as those facilitating an assignment scheme of reference cells throughout an array of memory cells. For example, one such assignment scheme assigns reference cells in a staggered pattern by row wherein each column contains a single reference cell. Additional schemes of multiple reference cells assigned in a repeating or a pseudo-random pattern are also disclosed.08-25-2011
20100034018ACCESSING MEMORY USING FRACTIONAL REFERENCE VOLTAGES - Devices, systems, methods, and other embodiments associated with accessing memory using fractional reference voltage are described. In one embodiment, an apparatus includes comparison logic. The comparison logic compares a threshold voltage of a memory cell to at least one pair of fractional reference voltages to generate comparison results. The apparatus includes read logic to determine a bit value of the memory cell based, at least in part, on the comparison results.02-11-2010
20090185414NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device having a plurality of electrically rewritable nonvolatile memory cells connected in series together includes a select gate transistor connected in series to the serial combination of memory cells. A certain one of the memory cells which is located adjacent to the select gets transistor is for use as a dummy cell. This dummy cell is not used for data storage. During data erasing, the dummy cell is applied with the same bias voltage as that for the other memory cells.07-23-2009
20100110786Nonvolatile memory device, memory system including the same, and memory test system - Provided are a nonvolatile memory device and a memory test system. The nonvolatile memory device includes a temperature compensator to calculate a trim value for regulating a characteristic of the nonvolatile memory device that varies with temperature in response to a test signal. The memory test system includes a plurality of nonvolatile memories and a tester. Each of the nonvolatile memories includes a temperature compensator. The tester tests the plurality of nonvolatile memories. The temperature compensator calculates a trim value for regulating a characteristic of the nonvolatile memory device that varies with temperature in response to a test signal of the tester.05-06-2010
20110170346NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, SIGNAL PROCESSING SYSTEM, METHOD FOR CONTROLLING SIGNAL PROCESSING SYSTEM, AND METHOD FOR REPROGRAMMING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes a memory cell array including a data storage area and a reprogram information storage area, and a reprogram information holder circuit configured to store data read from the reprogram information storage area. A reference level switch circuit selects one from a plurality of read reference levels generated by a reference level generator circuit, based on an output of the reprogram information holder circuit. A read circuit reads memory cell data from the data storage area 07-14-2011
20090147570USE OF 8-BIT OR HIGHER A/D FOR NAND CELL VALUE - A system and method, including computer software, for storing digital information uses multiple NAND flash memory cells. Each memory cell is adapted to receive charge during a write operation to an analog voltage that corresponds to a data value having a binary representation of more than 4 bits. An analog-to-digital converter converts the analog voltage from each memory cell into a digital representation of the analog voltage during a read operation of each cell.06-11-2009
20090310405Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/-10v BVDS - A nonvolatile memory device includes an array of EEPROM configured nonvolatile memory cells each having a floating gate memory transistor for storing a digital datum and a floating gate select transistor for activating the floating gate memory transistor for reading, programming, and erasing. The nonvolatile memory device has a row decoder to transfer the operational biasing voltage levels to word lines connected to the floating gate memory transistors for reading, programming, verifying, and erasing the selected nonvolatile memory cells. The nonvolatile memory device has a select gate decoder circuit transfers select gate control biasing voltages to the select gate control lines connected to the control gate of the floating gate select transistor for reading, programming, verifying, and erasing the floating gate memory transistor of the selected nonvolatile memory cells. The operational biasing voltage levels are generated to minimize operational disturbances and preventing drain to source breakdown in peripheral devices.12-17-2009
20090310404Memory device and method of controlling read level - Provided are memory devices and read level controlling methods. A memory device may include: a memory cell array that includes a plurality of memory cells; a counter that counts a number of memory cells with a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells; a first decision unit that compares the counted number of memory cells with a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval; and a second decision unit that generates a new reference threshold voltage interval based on the comparison result between the counted number of memory cells and the threshold value.12-17-2009
20100128522Flash memory device and programming/erasing method of the same - A flash memory device includes a bulk region, first through nth memory cell transistors arranged in a row on the bulk region, first through nth word lines respectively connected to gates of the first through nth memory cell transistors, a first dummy cell transistor connected to the first memory cell transistor, a first dummy word line connected to a gate of the first dummy cell transistor, a first selection transistor connected to the first dummy cell transistor, a first selection line connected to a gate of the first selection transistor, and a voltage control unit connected to the first selection line, the voltage control unit being adapted to output to the first selection line a voltage lower than a voltage applied to the bulk region, in an erasing mode for erasing the first through nth memory cell transistors.05-27-2010
20120033491PROGRAMMING OF MEMORY CELLS IN A NONVOLATILE MEMORY USING AN ACTIVE TRANSITION CONTROL - An electrically programmable non-volatile memory array and associated circuitry, including programming circuitry that adaptively senses completed programming of a selected memory cell. A programming bit line driver is connected to the bit line, and a first transistor has its source/drain path connected in series with the memory cell, and its gate connected to the output of the current comparator. As the MOS transistor in the selected cell becomes programmed, its drain current drawn from the bit line driver decays, and a remainder current into the current comparator increases. Upon the remainder current exceeding the reference current, the comparator turns off the first transistor; a second transistor connected between the source and drain of the cell transistor is turned on. In another approach, a summed current controls the gates of the first and second transistors. Programming terminates, and over-programming is avoided.02-09-2012
20090262576FLASH MEMORY DEVICE AND OPERATING METHOD OF FLASH MEMORY DEVICE - Disclosed is an operating method of a flash memory device, which includes normal memory cells and dummy memory cells. The operating method includes programming the normal memory cells and programming the dummy memory cells. A dummy pass voltage used for programming the dummy memory cells is different from a normal pass voltage used for programming the normal memory cells.10-22-2009
20090168511Flash memory device and reading method thereof - Disclosed is a flash memory device including a memory cell array having memory cells arranged at intersections of word lines and bit lines, such that one bit line is associated with a plurality of memory cells connected in series, a voltage generator configured to generate at least a first selection voltage, a row selection circuit configured to drive the non-selected word lines based on at least the first non-selected voltage, and a control logic circuit configured to control the voltage generator and the row selection circuit, such that the voltage generator generates at least the first non-selection voltage based on a location of a selected memory cell in the plurality of memory cells.07-02-2009
20090285019SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (11-19-2009
20090296465NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device and a method of operating the same. The nonvolatile memory device includes a memory cell array including memory cells for storing data, a temperature sensor and a controller. The temperature sensor outputs a temperature detection signal according to ambient temperatures while changing one or more pieces of reference voltage information, which are previously stored, when data is programmed into the memory cell array. The controller performs a verify operation of the program using a fast verify method and decides the number of steps which are comprised in step-shaped verify voltage pulse of the fast verify method according to the temperature detection signal.12-03-2009
20090296464METHOD FOR ELECTRICALLY TRIMMING AN NVM REFERENCE CELL - An integrated circuit memory has a plurality of non-volatile memory cells and a reference cell. The reference cell provides a reference current for reading a selected memory cell of the plurality of non-volatile memory cells. A method comprises trimming the reference cell to a predetermined threshold voltage, wherein trimming the reference cell comprises biasing a control gate, a source terminal, a drain terminal, and a substrate terminal of the reference cell with a predetermined set of bias conditions, wherein in response to the predetermined set of bias conditions, the reference cell will gain or lose charge toward an asymptotic state of charge that no longer changes significantly after a predetermined operating time under the predetermined set of bias conditions. In addition, the integrated circuit memory is also configured to adjust the reference cell gate voltage to output a desired target current reference.12-03-2009
20110199821POWER MANAGEMENT CHIP FURNISHED WITH VOLTAGE CONTROLLER - A power management IC includes a first IC having a boost converter IC which generates a second voltage using a first voltage supplied from an outside and supplies the second voltages to a charge pump, a reference voltage generation circuit, and an EEPROM; and a second IC configured to be inputted with a third voltage and a fourth voltage as outputs of the charge pump and output a fifth voltage and a sixth voltage. The second IC has a voltage regulator which regulates the third voltage and the fourth voltage or the fifth voltage and the sixth voltage and generates an eighth voltage and a ninth voltage as voltages required for programming operation or erasing operation of the EEPROM.08-18-2011
20090168510Method of operating non-volatile memory device - The present invention relates to an operation of a non-volatile memory device. According to a method of operating a non-volatile memory device in accordance with an aspect of the present invention, a first program operation is performed by applying a first program voltage to word lines of memory cells, constituting a memory block. As a result of the first program operation, threshold voltages of the memory cells are firstly measured. A second program operation is performed using a second program voltage, which is increased as much as a difference between a first threshold voltage, that is, a lowest voltage level of the firstly measured threshold voltages and a second threshold voltage, that is, an intermediate voltage level of the firstly measured threshold voltages. The second program operation is repeatedly performed by increasing the second program voltage as much as the difference between the first and second threshold voltages until the lowest threshold voltage becomes higher than a program verify voltage. A pass voltage is then set by reflecting a first voltage level, that is, a difference between a program voltage applied in a last program execution step and the first program voltage.07-02-2009
20090168512NONVOLATILE MEMORY - A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command.07-02-2009
20110002164Semiconductor device - A charge pump circuit, whose output is connected to a first node, starts a boosting operation after start of a test period. A load current application circuit supplies a load current to the first node during the test period. A voltage of the first node is a write voltage. A memory circuit stops application of the write voltage to a memory cell during the test period, and applies the write voltage to the memory cell after end of the test period. A high voltage detection unit compares the write voltage and a predetermined voltage to determine whether or not the write voltage is increased to the predetermined voltage. If the write voltage is less than the predetermined voltage at the end of the test period, the high voltage detection unit activates a disable signal. If the disable signal is activated, the charge pump circuit stops the boosting operation.01-06-2011
20080279000NONVOLATILE SEMICONDUCTOR MEMORY - There is provided a high-density mask ROM operable at a high speed. With the mask ROM, respective source lines are disposed so as to be shared by memory cells in respective columns adjacent to each other, and bit lines are disposed so as to correspond to the respective columns of the memory cells. Further, the dummy cells are disposed for the respective columns of the memory cells. The dummy cells are each made up of a series-circuit including a first switching transistor that is turned into the conducting state in response to a signal potential on a dummy word line (DWL), and a second switching transistor 11-13-2008
20100142267MEMORY CELL SHIFT ESTIMATION METHOD AND APPARATUS - Memory devices and methods are disclosed, such as those facilitating interpolation methods for reference memory cells based on their reference state and/or location in an array of memory cells. For example, a group of reference cells programmed to a subset of possible data states are utilized to interpolate for data states other than those in the subset. Such embodiments might be used to reduce the quantity of reference cells required.06-10-2010
20100135077METHOD OF PERFORMING READ OPERATION IN FLASH MEMORY DEVICE - A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.06-03-2010
20090027958VOLTAGE CONVERTER CIRCUIT AND FLASH MEMORY DEVICE HAVING THE SAME - A voltage conversion circuit includes a reference voltage generation unit for generating a reference voltage having a uniform level regardless of a level of an input voltage varying according to an operation mode; and a driver unit for generating and outputting an active voltage or a standby voltage using the reference voltage output by the reference voltage generation unit according to a control signal.01-29-2009
20090129147MULTIPLE PROGRAMMING OF SPARE MEMORY REGION FOR NONVOLATILE MEMORY - Structures, methods, and systems for multiple programming of spare memory region for nonvolatile memory are disclosed. In one embodiment, a nonvolatile memory system comprises a main memory cell array, a spare memory cell array, and a memory controller that divides the spare memory cell array into at least a first region and a second region. The system further comprises a selection module for selecting the main memory cell array and the first region to write data and the first reference cell to write first reference data associated with the data during an initial data writing operation and for selecting the second region to write additional data and the second reference cell to write second reference data associated with the additional data during an additional data writing operation.05-21-2009
20090141551METHOD FOR PERFORMING ERASING OPERATION IN NONVOLATILE MEMORY DEVICE - A method for performing erasing operation in a nonvolatile memory device includes the steps of applying an erasing voltage to P-wells of a selected memory cell block which is composed of a plurality of strings in each of which a plurality of memory cells and side memory cells are connected in series; performing soft programming operation by applying a soft programming voltage to word lines of the selected memory cell block; and programming the side memory cells by applying a programming voltage to the side memory cells.06-04-2009
20090251961FLASH MEMORY DEVICE AND VOLTAGE GENERATING CIRCUIT FOR THE SAME - Disclosed is a flash memory device which includes a memory core, a high voltage generating circuit and a reference voltage generating circuit. The high voltage generating circuit is configured to generate a high voltage to be supplied to the memory core. The reference voltage generating circuit is configured to generate at least one reference voltage to be supplied to the high voltage generating circuit. The reference voltage generating circuit includes a first reference voltage generator configured to generate a first reference voltage in response to a supply voltage, and a second reference voltage generator configured to generate a second reference voltage in response to the first reference voltage. The at least one reference voltage supplied to the high voltage generating circuit includes the second reference voltage.10-08-2009
20110222338METHOD OF HANDLING REFERENCE CELLS IN NVM ARRAYS - A memory chip includes memory cells storing data to be read, at least one reference cell having a reference cell current level, at least one reference gate voltage memory cell storing a reference gate voltage value and a read circuit to read the memory cells with a fixed gate voltage with respect to at least one reference cell activated at a voltage having its associated stored reference gate voltage value.09-15-2011
20090052239Nonvolatile memory devices and data reading methods - Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells.02-26-2009
20110141805METHOD OF PROGRAMMING AN ELECTRICALLY PROGRAMMABLE AND ERASABLE NON-VOLATILE MEMORY POINT, AND CORRESPONDING MEMORY DEVICE - An electrically programmable and erasable non-volatile memory point may have at least one floating-gate transistor connected to a bit line and to a ground line, and may be programmed with a programming voltage. In an erase phase of the memory point, a first, negative, voltage may be applied to the bit line and to the ground line. The absolute value of the first voltage may be smaller than a threshold value of a PN diode. A second positive voltage which is smaller than the programming voltage may be applied to the control gate of the floating-gate transistor. The difference between the second voltage and the first voltage may be equal to the programming voltage, and, in a writing phase, the first negative voltage may be applied to the control gate of the floating-gate transistor, and the second voltage may be applied to the bit line.06-16-2011
20110141806Flash Memory Device and Method for Manufacturing Flash Memory Device - A method of manufacturing a flash memory device is provided. First and second gates are formed on first and second dielectrics and spaced apart from each other on a cell area of a substrate. A third gate is formed on a third dielectric that is formed on first opposing sidewalls of the first gate and extending on a portion of the substrate from the first opposing sidewalls. A fourth gate is formed on a fourth dielectric that is formed on second opposing sidewalls of the second gate and extending on a portion of the substrate from the second opposing sidewalls. The third gate and third dielectric on one of the first opposing sidewalls facing the second gate and the fourth gate and fourth dielectric on one of the second opposing sidewalls facing the first gate are removed. Drain areas are formed at outer sides of the third and fourth gates, and a common source area is formed between the first and second gates.06-16-2011
20090244967FLASH MEMORY DEVICE HAVING DUMMY CELLS AND METHOD OF OPERATING THE SAME - Disclosed is a flash memory device having multiple strings, where each string includes first memory cells and second memory cells. One second memory cell of the second memory cells in each string is set to a programmed state, and remaining second memory cells are set to an erased state.10-01-2009
20090257277Flash memory including reduced swing amplifiers - For realizing low power and high speed flash memory, reduced swing amplifiers are used for reading, such that a first reduced swing amplifier serves as a local sense amp for reading a memory cell through a short local bit line, a second reduced swing amplifier serves as a segment sense amp for reading the local sense amp, and a third reduced swing amplifier serves as a global sense amp for reading the segment sense amp through a global bit line. When reading data, a voltage difference in the local bit line is converted to a time difference by the sense amps for differentiating low data and high data, which realizes low power consumption with the reduced swing amplifiers. And, short local bit line is quickly discharged when reading, which realizes fast operation. Additionally, alternative circuits and memory cell structures for implementing the memory are described.10-15-2009
20090257276NONVOLATILE ANALOG MEMORY - A nonvolatile analog memory has a floating gate point. The nonvolatile analog memory includes a first current source, a second current source, and a current adjuster. The first current source generates a first current, and the second current source generates a second current. The current adjuster turns on or turns off a current path of the second current according to a reference current and the first current. Furthermore, when the current path of the second current is turned on, the first current is adjusted according to the second current, such that the first current is equal to the reference current.10-15-2009
20080259683METHOD AND CIRCUIT FOR PROGRAMMING A MEMORY CELL, IN PARTICULAR OF THE NOR FLASH TYPE - A method programs a memory cell comprising: an initial phase in which a continuous voltage is applied to a drain terminal of said memory cell and a suitable programming voltage signal is applied to a gate terminal thereof; a regulation phase in which a constant voltage value is applied to said gate terminal and a voltage value of said drain terminal is regulated so as to be maintained at a fixed value until a threshold voltage value of said memory cell is set at a desired threshold voltage level; and a disable phase that stops said programming and is triggered as soon as a programming current value of said memory cell goes below a reference current value, said reference current value corresponding to the attainment by the threshold voltage value of said memory cell of the desired threshold voltage value. A programming circuit is suitable for implementing this method.10-23-2008
20100157670High voltage switching circuitry for a cross-point array - Circuitry for generating voltage levels operative to perform data operations on non-volatile re-writeable memory arrays are disclosed. In some embodiments an integrated circuit includes a substrate and a base layer formed on the substrate to include active devices configured to operate within a first voltage range. Further, the integrated circuit can include a cross-point memory array formed above the base layer and including re-writable two-terminal memory cells that are configured to operate, for example, within a second voltage range that is greater than the first voltage range. Conductive array lines in the cross-point memory array are electrically coupled with the active devices in the base layer. The integrated circuit also can include X-line decoders and Y-line decoders that include devices that operate in the first voltage range. The active devices can include other active circuitry such as sense amps for reading data from the memory cells, for example.06-24-2010
20100182830NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device includes an encoder configured to perform a scramble operation on input data, a digital sum value (DSV) generator configured to generate a DSV indicating a difference between a number of data ‘0’ and a number of data ‘1’ in the input data encoded by the encoder, a main cell unit of a page of a memory cell array, wherein the main cell unit is configured to store the input data encoded by the encoder, a spare cell unit of the page, wherein the spare cell unit is configured to store the DSV generated by the DSV generator, and a read voltage setting unit configured to determine a read voltage for the page by comparing a DSV generated from the stored data of the main cell unit and the stored DSV of the spare cell unit.07-22-2010
20100259977VCC CONTROL INSIDE DATA REGISTER OF MEMORY DEVICE - A memory device including current-limiting circuitry coupled to a first inverter inside a data register is provided. The current-limiting circuitry controls a voltage supplied to the first inverter and a reference voltage may be adjusted so that the voltage supplied to the first inverter is prevented from dropping below a voltage supplied to a second inverter inside the data register. The memory device may include a switch to allow coupling to the current-limiting circuitry for programming of the memory device.10-14-2010
20110110152NON-VOLATILE MULTILEVEL MEMORY CELLS WITH DATA READ OF REFERENCE CELLS - Embodiments of the present disclosure provide methods, devices, modules, and systems for non-volatile multilevel memory cell data retrieval with data read of reference cells. One method includes programming at least one data cell of a number of data cells coupled to a selected word line to a target data threshold voltage (Vt) level corresponding to a target state; programming at least one reference cell of a number of reference cells coupled to the selected word line to a target reference Vt level, the number of reference cells interleaved with the number of data cells; determining a reference state based on a data read of the at least one reference cell; and changing a state read from the at least one data cell based on a change of the at least one reference cell.05-12-2011
20100238722NONVOLATILE SEMICONDUCTOR MEMORY DEVICES AND VOLTAGE CONTROL CIRCUIT - A memory includes a binary-code setter BCS and the thermometer-code setter TCS, the BCS includes resistance elements with resistance values of R×209-23-2010
20090116283Controlling a memory device responsive to degradation - Embodiments of the present invention disclosed herein include devices, systems and methods, such as those directed to non-volatile memory devices and systems capable of determining a degradation parameter associated with one or more memory cells. Disclosed devices and systems according to embodiments of the present invention include those that utilize the degradation parameter to adjust control signals coupled to the memory cells.05-07-2009
20090073760Minimizing read disturb in an array flash cell - A method of reducing read disturb in NVM cells by using a first drain voltage to read the array cells and using a second, lower drain voltage, to read the reference cells. Drain voltages on global bitlines (GBLs) for both the array and the reference cells may be substantially the same as one another to maintain main path capacitance matching, while drain voltages on local bitlines (LBLs) for the reference cells may be lower than the drain voltage on local bitlines (LBLs) for the array cells to reduce second bit effect. Reducing the drain voltage of the reference cell at its drain port may be performed using a clamping device or a voltage drop device.03-19-2009
20090073759Device for protecting a memory against attacks by error injection - A memory is secured against an error injection during the reading of a datum. The memory includes: means for reading a reference datum in the memory during a phase of reading a datum stored in the memory; means for comparing the reference datum read with an expected value; and means for generating an error signal if the datum read is different from the expected value. Application is provided particularly but not exclusively to the protection of memories integrated into smart cards.03-19-2009
20080291722Charge trapping memory and accessing method thereof - An accessing method for a charge trapping memory including memory cells and tracking cells for storing expected data. The method includes the following steps. In a specific time first, the expected data is written into the tracking cells and the memory cells are not being programmed, read or erased. Next, the data stored in the tracking cells is sensed as read data according to a present reference current. Then, the present reference current is adjusted to an adjusted reference current according to a difference between the read data and the expected data so that the data stored in tracking cells is sensed as corresponding with the expected data according to the adjusted reference current. Thereafter, the memory cells are read according to the adjusted reference current.11-27-2008
20090109742CONTROL OF TEMPERATURE SLOPE FOR BAND GAP REFERENCE VOLTAGE IN A MEMORY DEVICE - Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating temperature slope level and controlling a reference voltage(s) associated with a word-line(s) and/or bit-line(s) to facilitate execution of operations in a memory, while also controlling a respective current level(s) associated with the reference voltage to minimize errors in the memory or harm to the memory. The reference voltage can be controlled based on a first resistance and the current level can be controlled based on a second resistance that can be based on the first resistance. An analyzer component can facilitate determining a desired operating temperature slope level. Trim bits can be employed to facilitate setting the first resistance and/or the second resistance.04-30-2009
20110122688Reading array cell with matched reference cell - A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be read, and reading the bit to be read with respect to a multi-bit reference cell, the reference cell comprising a first bit at a first non-ground programmed state and a second bit at a second non-ground programmed state. Compared with the prior art, the present invention may enable achieving an improved sensing accuracy together with improved read disturb immunity.05-26-2011
20100321995MEMORY CELL THRESHOLD VOLTAGE DRIFT ESTIMATION METHODS AND APPARATUS - Methods of operating memory devices include determining a threshold voltage drift of two or more reference memory cells of the memory device programmed to only a subset of data states of the memory device and, using the determined threshold voltage drift of the two or more reference memory cells, estimating a threshold voltage drift of one or more user data memory cells programmed to a data state of the memory device that is mutually exclusive to the subset of data states of the memory device. Apparatus include memory devices having an array of memory cells having one or more user data memory cells and two or more reference memory cells, and control circuitry configured to maintain locations and initial programmed threshold voltages of the two or more reference memory cells corresponding to only a subset of data states of the memory device.12-23-2010
20110026324Method for Programming a Floating Gate - The invention provides methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.02-03-2011
20120230103Nonvolatile Memory Device And Operating Method Thereof - According to example embodiments, a nonvolatile memory device includes a substrate, at least one string extending vertically from the substrate, and a bit line current controlling circuit connected to the at least one string via at least one bit line. The at least one string may include a channel containing polycrystalline silicon. The bit line current controlling circuit may be configured to increase the amount of current being supplied to the bit line according to a decrease in a temperature such that a current flowing through the channel of the at least one string is increased when a temperature decreases.09-13-2012
20110211392CELL STRING OF A MEMORY CELL ARRAY AND METHOD OF ERASING THE SAME - A cell string included in a memory cell array of a nonvolatile memory device includes a plurality of memory cells, a string select transistor, and a ground select transistor. The plurality of memory cells are connected in series. The string select transistor is connected between a bitline and the plurality of memory cells, and has a structure substantially the same as a structure of each memory cell. The ground select transistor is connected between the plurality of memory cells and a common source line, and has a structure substantially the same as the structure of each memory cell.09-01-2011
20100135076METHOD OF PERFORMING READ OPERATION IN FLASH MEMORY DEVICE - A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.06-03-2010
20110249492SEMICONDUCTOR STORAGE DEVICE AND BOOSTING CIRCUIT - A boosting circuit includes a clock control circuit which outputs a first reference clock signal by controlling the clock signal, and which outputs a second reference clock signal having a same period as that of the first reference clock signal, the second reference clock signal shifted in phase from the first reference clock signal. The boosting circuit includes a first pump clock generation circuit which outputs the first reference clock signal which is input thereto, as a first pump clock signal in accordance with a first pump flag signal. The boosting circuit includes a second pump clock generation circuit which outputs the second reference clock signal which is input thereto, as a second pump clock signal in accordance with a second pump flag signal. The boosting circuit includes a first charge pump which boosts an input voltage in accordance with the first pump clock signal. The boosting circuit includes a second charge pump which boosts an input voltage in accordance with the second pump clock signal.10-13-2011
20080247229NON-VOLATILE STORAGE USING CURRENT SENSING WITH BIASING OF SOURCE AND P-Well - A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.10-09-2008
20090021980Non-volatile memory and operating method thereof - A non-volatile memory and an operating method thereof. The non-volatile memory includes a memory cell array, a first dummy cell array, an address decoding unit and a synchronous programming circuit. The memory cell array includes a first memory cell, and the first dummy cell array includes a first dummy cell. The first dummy cell is adjacent to a first side of a memory cell array and corresponds to the first memory cell. The address decoding unit receives an address signal for decoding. When the address signal is a relative address of the first dummy cell, the synchronous programming circuit controls the first dummy cell and the first memory cell to be synchronously programmed.01-22-2009
20080285340Apparatus for reading data and method using the same - Disclosed are an apparatus and a method for reading data. The method for reading data according to example embodiments includes comparing a threshold voltage of a memory cell with a first boundary voltage, comparing the threshold voltage with a second boundary voltage having a higher voltage level than that of the first boundary voltage, and determining data of the memory cell based on the threshold voltage, the first boundary voltage, and the second boundary voltage.11-20-2008
20080285339VOLTAGE REFERENCE GENERATOR USING BIG FLASH CELL - A voltage reference generator includes multiple closed loop voltage references. Each of the closed loop voltage references uses a flash cell with a variable threshold voltage and a feedback loop to trim a reference voltage. The voltage reference generator includes sample and hold capacitors in output stages to allow reference voltages to be refreshed during a standby mode of operation.11-20-2008
20110134692ADAPTIVE DYNAMIC READING OF FLASH MEMORIES - A data storage device includes a controller and storage elements. The controller is configured to read a threshold voltage of each of a plurality of the storage elements to generate read threshold data and to assign reference voltages defining each of a plurality of voltage threshold states based on the read threshold data.06-09-2011
20080247228NON-VOLATILE STORAGE WITH CURRENT SENSING OF NEGATIVE THRESHOLD VOLTAGES - A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.10-09-2008
20080205135Method of reading the bits of nitride read-only memory cell - A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.08-28-2008
20080205134Charge pump to supply voltage bands - The present invention provides a voltage generating circuit and a control method thereof which is capable of preventing an increase in the occupied area and suitable for raising the voltage of the power supply in a wide range.08-28-2008
20100329003MEMORY EMPLOYING INDEPENDENT DYNAMIC REFERENCE AREAS - A memory that employs separate Dref areas that are independently accessed to provide a threshold voltage reference signal. The memory includes the separate Dref areas, a data area positioned between the Dref areas, one or more sense amplifiers, and a switch component. The switch component is arranged to receive addressing data and to independently couple one of the separate Dref areas to the sense amplifiers based, at least in part, on a physical proximity of individual memory cells along a word line.12-30-2010
20100214836Semiconductor storage apparatus - A semiconductor storage apparatus has a control circuit. The control circuit deactivates the first and second amplifier circuits, turns off the first, second, fourth and fifth switch circuits, and turns on the third and sixth switch circuits in response to an external signal based on reduction of current dissipation of a power supply which supplies the power supply voltage.08-26-2010
20100020598SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - The present invention is a semiconductor device including: a resistor R01-28-2010
20090244966Threshold Evaluation Of EPROM Cells - Evaluating an embedded EPROM in a host IC device involves using program circuitry to program/unprogram all of the floating-gate cells of the embedded EPROM, then simultaneously transmitting a predetermined test bias voltage to all of the programmed/unprogrammed floating-gate cells, and then evaluating the output terminals of all of the floating-gate cells using a logic (e.g., wired NOR or NAND) circuit, whereby successful operation of all of the embedded EPROM cells causes the wired logic circuit to generate a single positive test result signal, and the failure of one or more of the embedded EPROM cells causes the wired logic circuit to generate a single negative test signal. A reference cell is also evaluated using a bias testing circuit to determine that the reference voltage supplied during normal operation is at an acceptable voltage level.10-01-2009
20110305079NONVOLATILE MEMORY DEVICE INCLUDING DUMMY MEMORY CELL AND PROGRAM METHOD THEREOF - A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.12-15-2011
20080273383HIGH VOLTAGE GENERATOR CIRCUIT AND FLASH MEMORY DEVICE INCLUDING THE SAME - A high voltage generator circuit includes a high voltage generator configured to generate a high voltage; and a control circuit configured to control the high voltage generator so as to vary the high voltage in response to variations of a peripheral temperature.11-06-2008
20110157979SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND CELL ARRAY OF SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device, a method of manufacturing the same, and a cell array of a semiconductor memory device are provided. The semiconductor memory device includes: a first gate insulation layer and a second gate insulation layer, being spaced a predetermined distance from each other, on a portion of a semiconductor substrate; a select gate on the first gate insulation layer; a floating gate on the second gate insulation layer; a third gate insulation layer on the floating gate; a control gate on the third gate insulation layer; a first ion implantation region in the semiconductor substrate between the select gate and the floating gate; a second ion implantation region in the semiconductor substrate at a side of the select gate opposite the first ion implantation region; and a third ion implantation region in the semiconductor substrate at a side of the floating gate opposite the first ion implantation region.06-30-2011
20110157974Novel cell array for highly-scalable , byte-alterable, two-transistor FLOTOX EEPROM non-volatile memory - Two-transistor FLOTOX EEPROM cells are collected to form an alterable unit such as a byte. Each of the two-transistor FLOTOX EEPROM cells has a bit line connected to a drain of a select transistor of each of the two-transistor FLOTOX EEPROM cells and a source line placed in parallel with the bit line and connected to a source of a floating gate transistor of each of the two-transistor FLOTOX EEPROM cells. In a program operation, the bit lines are connected to a very large programming voltage level and the source lines are connected to a punch through inhibit voltage level. The punch through inhibit voltage level is approximately one half the very large programming voltage level. The lower drain-to-source voltage level permits the select transistor and the floating gate transistor to have smaller channel lengths and therefore a lower drain-to-source breakdown voltage.06-30-2011
20110157976Voltage Stabilization Device and Semiconductor Device Including the Same, and Voltage Generation Method - Integrated circuit memory devices include multiple voltage regulators configured to generate respective boosted voltages, which are provided to a memory cell block. A first voltage regulator is configured to increase a well voltage (Vwell) from a first level to an elevated second level during a pull-up time interval when a boosted well voltage level is required within a memory cell block. The increase in the level of the well voltage occurs in response to a transition of a trim signal (Trim) received at an input of the first voltage regulator. A second voltage regulator is also provided. The second voltage regulator is configured to increase a word line voltage (Vwl) from a third level to an elevated fourth level during the pull-up time interval, in response to the transition of the trim signal and in response to the well voltage. A memory cell block is provided, which is configured to receive the well voltage and the word line voltage during the pull-up time interval.06-30-2011
20110157975FTP MEMORY DEVICE WITH PROGRAMING AND ERASING BASED ON FOWLER-NORDHEIM EFFECT - An embodiment of a non-volatile memory device integrated in a chip of semiconductor material is proposed. The memory device includes a plurality of memory cells. Each memory cell includes a first well and a second well of first type of conductivity that are formed in an insulating region of a second type of conductivity. The memory cell further includes a first, a second, a third and a fourth region of the second type of conductivity that are formed in the first well; these regions define a sequence of a first selection transistor of MOS type, a storage transistor of floating gate MOS type, and a second selection transistor of MOS type that are connected in series. The first region is short-circuited to the first well. Moreover, the memory device includes a first gate of the first selection transistor, a second gate of the second selection transistor, and a floating gate of the storage transistor. A control gate of the storage transistor is formed in the second well; the control gate is capacitively coupled with the floating gate.06-30-2011
20120002468CELL DETERIORATION WARNING APPARATUS AND METHOD - Memory devices and methods adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data transfer rates relative to devices processing and generating only binary data signals indicative of individual bits. Programming of such memory devices includes programming to a target threshold voltage range representative of the desired bit pattern. Reading such memory devices includes generating an analog data signal indicative of a threshold voltage of a target memory cell. Warning of cell deterioration can be performed using reference cells programmed in accordance with a known pattern such as to approximate deterioration of non-volatile memory cells of the device.01-05-2012
20100188896NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR DETECTING LEAKAGE DEFECTS OF THE SAME - There is provided a nonvolatile semiconductor memory wherein a normal mode voltage is provided to a selected word line when a normal mode is selected, and a test mode voltage lower than the normal mode voltage is provided to the selected word line when a test mode is selected, thus leakage current is detected by selecting the test mode.07-29-2010
20120008385SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a memory cell array including cell strings each including a plurality of memory cells, bit lines coupled to the respective cell strings, and page buffers configured to compare a reference current and currents of the respective bit line and output sense data corresponding to a level of a threshold voltage of a selected memory cell based on a result of the comparison, in a sense operation.01-12-2012
20120008384Detection of Word-Line Leakage in Memory Arrays - Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit.01-12-2012
20090129148SEMICONDUCTOR MEMORY - A semiconductor memory capable of storing and reading data in a memory cell for holding the data corresponding to a threshold voltage has a reference current generating circuit having a reference current generating section and an amplifier section.05-21-2009
20120206961METHOD FOR OPERATING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method for operating a nonvolatile semiconductor memory device, the device includes a memory unit having a memory string, and a control unit. The memory string includes a plurality of transistors and has a first group being part of the transistors, a adjusting transistor connected next to the first group, and a second group including transistors connected to a side opposite the first group with respect to the adjusting transistor. The method includes rewriting the threshold values of the transistors of the first group, and then performing control so as to set a first threshold value for adjustment to the adjusting transistor to adjust an amount corresponding to relative variations in the threshold values of the transistors of the second group, the relative variations being caused by the rewrite of the threshold values of the transistors of the first group.08-16-2012
20120069651EEPROM-based, data-oriented combo NVM design - A nonvolatile memory device has a combination of FLOTOX EEPROM nonvolatile memory arrays. Each FLOTOX-based nonvolatile memory array is formed of FLOTOX-based nonvolatile memory cells that include at least one floating gate tunneling oxide transistor such that a coupling ratio of the control gate to the floating gate of the floating gate tunneling oxide transistor is from approximately 60% to approximately 70% and a coupling ratio of the floating gate to the drain region of the floating gate tunneling oxide transistor is maintained as a constant of is from approximately 10% to approximately 20% and such that a channel length of the channel region is decreased such that during the programming procedure a negative programming voltage level is applied to the control gate and a moderate positive programming voltage level is applied to the drain region to prevent the moderate positive programming voltage level from exceeding a drain-to-source breakdown voltage.03-22-2012
20120300545SYSTEMS AND METHODS FOR GENERATING SOFT INFORMATION IN NAND FLASH - Systems and methods are provided to generate soft information related to the threshold voltage of a memory cell. A range of threshold voltages for the memory cell is divided into subregions of threshold voltage values herein referred to as bins. An output of the memory cell in response to an applied reference signal is measured. The applied reference signal includes a voltage value and position information. A single bin is identified based on the position information of the reference signal. The identified bin is split into more than one bin based on the output of the memory cell and the voltage value of the reference signal. The newly split bins and all the other bins that were not split are assigned new bin indices.11-29-2012
20090135646OPERATION SEQUENCE AND COMMANDS FOR MEASURING THRESHOLD VOLTAGE DISTRIBUTION IN MEMORY - A memory device generates one or more read reference voltages rather than being explicitly supplied with each read reference voltage from an external host controller. The technique involves providing a command to the memory device that causes a reading of a set of storage elements by the memory device using a reference voltage which is different than a reference voltage used in a previous reading, where the new read reference value is not explicitly set outside the memory device. In one implementation, the memory device is provided with an initial reference voltage and a step size for generating additional reference voltages. The technique can be used, e.g., in determining a threshold voltage distribution of a set of storage elements. In this case, a voltage sweep can be applied to a word line associated with the set of storage elements, and data obtained based on the number of conductive storage elements.05-28-2009
20100246256NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory includes: a lower semiconductor layer; a first cell string having a plurality of memory cells formed on the lower semiconductor layer; an upper semiconductor layer formed above the lower semiconductor layer; and a second cell string having a plurality of memory cells formed on the upper semiconductor layer. A memory cell formed on a crystal defect of the upper semiconductor layer among the plurality of memory cells that form the second cell string is operated as a dummy cell.09-30-2010
20100246255NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR CONTROLLING THE SAME - A nonvolatile semiconductor storage device includes a memory cell array and a peripheral circuit. The memory cell array includes active areas extending in a first direction, a dummy active area extending in the first direction, memory cells on the plurality of active areas, first dummy cells on the dummy active area, diffusion layer areas each connected to the corresponding memory cell and the corresponding first dummy cell, first contacts in the respective active areas, and a second contact in the dummy active area. The peripheral circuit includes a voltage applying unit configured to apply to each of the first contacts a first voltage to set each of the memory cells in a write enable state or a second voltage to set the memory cells in a write inhibit state, and to apply to the second contact a third voltage to change a threshold of the dummy cell.09-30-2010
20120163075NON-VOLATILE STORAGE DEVICE - There is provided a non-volatile storage device including: a bit line that is connected to a non-volatile storage element and is applied with a voltage of magnitude corresponding to the logic value stored in the storage element; a charging section that charges the bit line to a voltage of equivalent magnitude to the reference voltage; a voltage generation section that is connected between the reference voltage line and the bit line, comprises a capacitance load for generating coupling charge when charging by the charging section has been performed, and employs the capacitance load to generate a voltage according to a difference between the magnitude of the voltage of the reference voltage line and the magnitude of the voltage of the bit line as a voltage expressing the comparison result; and a charge absorbing section for absorbing the coupling charge generated by the capacitance load.06-28-2012
20120163074Early degradation detection in flash memory using test cells - A Flash memory system and a method for data management using the embodiments of the invention use special test cells with Early Degradation Detection (EDD) circuitry instead of using the actual user-data storage cells are described. The Flash memory test cells can be made to serve as a “canary in a coal mine” by being made more sensitive than the standard cells by using experimentally determined sensitive write V06-28-2012
20120163073Early detection of degradation in NOR flash memory - The embodiments of the invention in this disclosure describe techniques for early warning of degradation in NOR Flash memories by estimating the dispersion of the threshold voltages (V06-28-2012
20110182118ADAPTIVE DYNAMIC READING OF FLASH MEMORIES - Each of a plurality of flash memory cells is programmed to a respective one of L≧2 threshold voltage states within a threshold voltage window. Values of parameters of threshold voltage functions are adjusted in accordance with comparisons of the threshold voltages of some or all of the cells to two or more of m≧2 threshold voltage intervals within the threshold voltage window. Reference voltages for reading the cells are selected based on the values. Alternatively, the m threshold voltage intervals span the threshold voltage window, and respective threshold voltage states are assigned to the cells based on numbers of cells whose threshold voltages are in the intervals, without re-reading the cells.07-28-2011
20110182116SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (07-28-2011
20120213001RELIABILITY METRICS MANAGEMENT FOR SOFT DECODING - Embodiments provide a method for reading a target memory sector of a memory. The method comprises, based on read data corresponding to a plurality of memory sectors of the memory, estimating first one or more reference voltages and, using the first one or more reference voltages, performing a first read operation on the target memory sector. The method further comprises determining an error correcting code (ECC) decoding failure of the first read operation and, in response to determining the ECC decoding failure of the first read operation and based on read data corresponding to the target memory sector, updating the estimate of the first one or more reference voltages to generate second one or more reference voltages. The method also comprises using the second one or more reference voltages, performing a second read operation on the target memory sector.08-23-2012
20120236638OBTAINING SOFT INFORMATION USING A HARD INTERFACE - A flash memory controller, a computer readable medium and a method for generating reliability information using a hard information interface, the method may include performing multiple read attempts, while using the hard information interface, of a plurality of flash memory cells to provide multiple read results; wherein each flash memory cell is read by providing a reference voltage to the flash memory cell; wherein a same reference voltage is provided during the multiple read attempts; and generating, for each flash memory cell, reliability information based upon multiple read results of the flash memory cell.09-20-2012
20120236637NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device according to one embodiment includes a memory cell array that has NAND cell units in which a plurality of memory cells are connected in series, the control gate of each of the plurality of memory cells being connected to a word line, and a control circuit configured to execute a write operation by applying a write voltage to the word line. The control circuit is configured to execute a correction write operation accompanied by the write operation and executed on a selected memory cell, when a threshold voltage of data written in a reference memory cell is an erase level, the reference memory cell being the memory cell adjacent to the selected memory cell and in which the data is written after the write operation on the selected memory cell.09-20-2012
20120075929SENSING OF MEMORY CELLS IN NAND FLASH - An analog voltage NAND architecture non-volatile memory data read/verify process and circuits is described that senses analog voltages in non-volatile cells utilizing source follower voltage sensing. In a source follower sensing or read operation the programmed threshold voltage of a cell in a NAND string of a NAND architecture Flash memory array is read by applying an elevated voltage to the source line, an elevated pass voltage (V03-29-2012
20120176836NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a non-volatile semiconductor memory device comprises memory strings. Each memory string comprises a semiconductor layer, control gates, a first selection gate, and a second selection gate. A semiconductor layer comprises a pair of pillar portions which extend in a vertical direction to a substrate, and a coupling portion formed to couple the pair of pillar portions. Control gates orthogonally intersect one of the pair of pillar portions or the other of the pair of pillar portions. A first selection gate orthogonally intersects one of the pair of pillar portions and is formed above the control gates. A second selection gate orthogonally intersects the other of the pair of pillar portions, is formed above the control gates, and is on the same level as the first selection gate as well as integrated with the first selection gate.07-12-2012
201002718733-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.10-28-2010
20100271871METHODS FOR PROGRAMMING A MEMORY DEVICE AND MEMORY DEVICES USING INHIBIT VOLTAGES THAT ARE LESS THAN A SUPPLY VOLTAGE - Methods for programming a memory array and memory devices are disclosed. In one such method, inhibited bit lines are charged to an inhibit voltage that is less than a supply voltage. The word lines of memory cells to be programmed are biased at a programming preparation voltage that is less than a nominal programming preparation voltage as used in the conventional art. Programming pulses can be applied to selected word lines of the memory cells to be programmed when the uninhibited bit lines are at 0V.10-28-2010
20100008136Methods of operating memory devices - Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.01-14-2010
20100008137NONVOLATILE MEMORY DEVICE AND PROGRAM OR ERASE METHOD USING THE SAME - A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.01-14-2010
20120218817NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE - A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines08-30-2012
20120257450METHODS AND DEVICES FOR MEMORY READS WITH PRECHARGED DATA LINES - Methods and devices for memory reads involving precharging adjacent data lines to a particular voltage for a read operation. During the operation, a data line associated with a selected memory cell is selectively discharged from the particular voltage depending upon the data value of the selected memory cell while the adjacent data line is maintained at the particular voltage. Various embodiments include the array architecture to facilitate precharging the adjacent pair of data lines to a particular voltage and maintaining the unselected data line at the particular voltage during a sensing phase of a read operation10-11-2012
20120081957FLASH MEMORY DEVICE AND WORDLINE VOLTAGE GENERATING METHOD THEREOF - A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.04-05-2012
20120327710ADAPTIVE WRITE PROCEDURES FOR NON-VOLATILE MEMORY - A method includes performing a write operation on memory cells of a memory array to a first logic state using a voltage of a charge pump. A portion of the write operation is performed on the memory cells of the memory array using the voltage of the charge pump. A level of the voltage is compared to a reference. If the level of the voltage is below the reference, the write operation is continued with an increased level of the voltage by reducing load on the charge pump by providing the voltage on a reduced number of memory cells, wherein the reduced number of memory cells is a first subset of the memory cells.12-27-2012
20120268987System and Method for Detecting Disturbed Memory Cells of a Semiconductor Memory Device - A method of detecting a disturb condition of a memory cell includes application of multiple sets of conditions to the memory cell and determining whether the memory cell behaves as a programmed memory cell in response to the sets of conditions. A disturbed memory cell can be detected if the memory cell responds as a programmed memory cell in response to one of the sets of conditions, but responds as an erased memory cell in response to another of the sets of conditions.10-25-2012
20110222340FLASH MEMORY DEVICE AND OPERATING METHOD FOR CONCURRENTLY APPLYING DIFFERENT BIAS VOLTAGES TO DUMMY MEMORY CELLS AND REGULAR MEMORY CELLS DURING ERASURE - Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described.09-15-2011
20120087187Method for Programming a Floating Gate - The invention provides methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.04-12-2012
20130010536WORD-LINE VOLTAGE REGULATING CIRCUIT AND SINGLE POWER SUPPLY MEMORY - A word-line voltage regulating circuit and a single power supply memory are disclosed. The word-line voltage regulating circuit includes: a charge pump for raising an input voltage to a desired value and outputting the raised input voltage as an output voltage; a controller for inputting a refresh signal to the charge pump according to the output voltage of the charge pump; and a comparator for inputting a feedback signal to the charge pump according to a comparison result between the output voltage of the charge pump and a reference voltage. The charge pump works under control of the refresh signal when the memory is in an active mode, and works under control of the feedback signal when the memory is in a standby mode. The word-line voltage regulating circuit can effectively reduce the power consumption and can meet the requirement for proportional scale-down of integrated circuits.01-10-2013
20130094287SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a bit line, a first cell string and a second cell string. The first cell string includes a first selecting transistor connected to the bit line in series and having a threshold voltage greater than a first reference voltage, a second selecting transistor having a threshold voltage smaller than a second reference voltage, cell transistors and a ground selecting transistor. The second cell string includes a third selecting transistor connected to the bit line in series and having a threshold voltage smaller than the first reference voltage, a fourth selecting transistor having a threshold voltage greater than the second reference voltage, cell transistors and a ground selecting transistor. A channel region of the first selecting transistor has an enhancement mode and a first conductive type. A channel region of the third selecting transistor has a depletion mode and a second conductive type.04-18-2013
20130094286DETERMINING OPTIMAL READ REFERENCE AND PROGRAMMING VOLTAGES FOR NON-VOLATILE MEMORY USING MUTUAL INFORMATION - Approaches for operating a memory device comprising memory cells are disclosed. Optimal values for one or more of programming voltages used to program memory cells of the memory device and read reference voltages used to read the memory cells are determined using a mutual information function, I(X; Y), where X represents data values programmed to the memory cells and Y represents data values read from the memory cells. The read reference and/or programming voltages used for reading and/or programming the memory cells are adjusted using the optimal values.04-18-2013
20130100734APPARATUS AND METHOD FOR TRIMMING REFERENCE CELL IN SEMICONDUCTOR MEMORY DEVICE - A method of trimming a reference cell in a semiconductor memory device comprises the steps of: generating a reference current based on a bias voltage applied to the reference cell; generating a first current and a second current based on the value of a control voltage and the resistance of a precision resistor disposed outside the semiconductor memory device; comparing the reference current with the first current; comparing the reference current with the second current; programming the reference cell if the value of the reference current is greater than that of the first current; and erasing the reference cell if the value of the reference current is less than that of the second current. The value of the second current is less than that of the first current.04-25-2013
20130100735Flash Memory Device and Operating Method for Concurrently Applying Different Bias Voltages to Dummy Memory Cells and Regular Memory Cells During Erasure - Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described.04-25-2013
20130176775FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY - An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value.07-11-2013
20130141969SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR MEMORY - A semiconductor integrated circuit includes a first constant current output circuit that outputs a first constant current from a first constant current terminal to a first output terminal. The semiconductor integrated circuit includes an error current output circuit that outputs an error current from an error current terminal to the first output terminal.06-06-2013
20110222339NONVOLATILE MEMORY DEVICE FOR REDUCING INTERFERENCE BETWEEN WORD LINES AND OPERATION METHOD THEREOF - Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line. Accordingly, when a program operation is performed, a charge loss of a memory cell connected to a word line adjacent to a dummy word line can be reduced by changing a voltage applied to the dummy word line according to a select word line.09-15-2011
20110235411FAST PROGRAMMING MEMORY DEVICE - In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.09-29-2011
20130148423SEMICONDUCTOR MEMORY DEVICE - A main bit line is disposed between a reference main bit line and core main bit lines. A selection transistor disposed between a sub bit line connected to a cell and the main bit line can switch between a conductive state and a non-conductive state independently of other selection transistors. A dummy main bit line can be set to ground potential by a shield grounding section, and can be used as a shield line of the reference main bit line.06-13-2013
20120281470NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory includes a first power supply voltage pad to which a first power supply voltage required for a writing, reading or erasing operation of the memory cells is applied. The nonvolatile semiconductor memory includes a second power supply voltage pad to which a second power supply voltage that is lower than the first power supply voltage and to be supplied to the I/O circuit is applied. The nonvolatile semiconductor memory includes a first voltage down-converting circuit that converts the first power supply voltage down to a first down-converted voltage that is higher than the second power supply voltage. The nonvolatile semiconductor memory includes a second voltage down-converting circuit that converts the second power supply voltage down to a second down-converted voltage that is lower than the first down-converted voltage.11-08-2012
20130182502Operating Methods of Nonvolatile Memory Devices - Disclosed are methods of operating a nonvolatile memory device which includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of memory cells stacked in a direction perpendicular to the substrate. The methods may include applying a word line erase voltage to word lines connected to memory cells of the plurality of cell strings; floating ground selection lines connected to ground selection transistors of the plurality of cell strings and string selection lines connected to string selection transistors of the plurality of cell strings; applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings; applying an erase voltage to the substrate; and floating the at least one lower dummy word line after applying of the erase voltage.07-18-2013
20110310664NON-VOLATILE MEMORY APPARATUS AND METHODS - Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.12-22-2011
20120008386Determining Optimal Reference Voltages For Progressive Reads In Flash Memory Systems - A system including a reference voltage module to select a first reference voltage between a first threshold voltage corresponding to a first state of a memory cell and a second threshold voltage corresponding to a second state of the memory cell, a second reference voltage less than the first reference voltage, and a third reference voltage greater than the first reference voltage. The system includes a read module to perform a first read operation to determine a state of the memory cell based on the first reference voltage, and in response to a first failure to decode data read from the memory cell in the first read operation, perform a second read operation to determine the state based on the second reference voltage and a third read operation to determine the state based on the third reference voltage.01-12-2012
20130201758NON-VOLATILE MEMORY DEVICE HAVING VERTICAL STRUCTURE AND METHOD OF OPERATING THE SAME - Provided is a method of operating a non-volatile memory device. The method includes applying a turn-on voltage to each of first and second string select transistors of a first NAND string, applying first and second voltages to third and fourth string select transistors of a second NAND string, respectively, and applying a high voltage to word lines connected with memory cells of the first and second NAND strings.08-08-2013
20130208538NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS AND DATA SENSING METHOD THEREOF - A nonvolatile semiconductor memory apparatus includes a memory cell block, a plurality of page buffers, and a reference page buffer unit. The memory cell block includes a plurality of memory cell strings each of which includes a plurality of memory cells and a dummy memory cell string which includes a plurality of dummy memory cells. The page buffers sense data stored in the memory cells and apply the sensed data to an output node. The reference page buffer unit senses the dummy memory cells and adjusts the timing to apply the values sensed by the page buffers to the output node.08-15-2013

Patent applications in class Reference signal (e.g., dummy cell)

Patent applications in all subclasses Reference signal (e.g., dummy cell)