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361 - Electricity: electrical systems and devices

361230000 - ELECTRIC CHARGE GENERATING OR CONDUCTING MEANS (E.G., CHARGING OF GASES)

361233000 - Use of forces of electric charge or field

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DocumentTitleDate
20090080136ELECTROSTATIC CHUCK MEMBER - An electrostatic chuck member comprises an electrode layer and an electric insulating layer, wherein a spray coating layer of an oxide of a Group 3A element in the Periodic Table is formed as an outermost layer of the member and a surface of the spray coating layer is rendered into a densified re-melting layer having an average surface roughness (Ra) Of 0.8-3.0 μm.03-26-2009
20100061033ELECTROSTATIC CHUCK POWER SUPPLY - A power supply is provided for an electrostatic chuck. A signal generating circuit of the power supply is configured to generate a square wave signal. An amplifying circuit is electrically connected to the square wave circuit and configured to amplify the square wave signal. A transformer has a primary and a secondary winding. The primary winding is electrically connected to the amplifying circuit and the secondary winding is configured to be electrically connected to the electrostatic chuck. The secondary winding produces a signal for the electrostatic chuck. A voltage divider circuit is electrically connected to the secondary winding and to the amplifying circuit. The voltage divider circuit is configured to reduce the voltage of the signal for the electrostatic chuck and feed back the reduced voltage signal to the amplifying circuit. The signal from the secondary winding is a trapezoidal waveform with approximately flat tops and minimal dead-time between phase reversals.03-11-2010
20100149720BIPOLAR ELECTROSTATIC CHUCK - A bipolar electrostatic chuck which has excellent dielectric breakdown strength and provides excellent attracting performance. The bipolar electrostatic chuck eliminates difficulty in dismounting a sample from a sample attracting plane as much as possible after application of a voltage to electrodes is finished. The bipolar electrostatic chuck is provided with a first electrode and a second electrode in an insulator and permits a surface of the insulator to be the sample attracting plane. The insulator has the first electrode, an interelectrode insulating layer and the second electrode in this order from the sample attracting plane in the depth direction. The second electrode has a region not overlapping with the first electrode in a normal line direction of the sample attracting plane.06-17-2010
20090122459Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.05-14-2009
20090122458EMBOSSED ELECTROSTATIC CHUCK - An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.05-14-2009
20090273879Electrostatic Attraction Apparatus for Glass Substrate and Method of Attracting and Releasing the Same - An object is providing an electrostatic attraction apparatus and an attracting/releasing method capable of reliably attracting and quickly releasing a glass substrate. An attraction force for attracting a glass substrate is obtained according to the physical properties of the glass substrate. In addition to obtaining an attraction voltage (V11-05-2009
20090059461ELECTROSTATIC CHUCK - An electrostatic chuck of the invention includes a base portion; a heat insulating layer bonded onto the base portion; and a chuck function portion bonded on the heat insulating layer and composed by providing a heater electrode and an electrostatic chuck (ESC) electrode in a ceramic substrate portion. Adhesive layers are respectively provided on the both surface sides of the heat insulating layer. In the case where the base portion and the chuck function portion are bonded together with high adhesion strength, openings are formed in the heat insulating layer and are filled with the adhesive layers.03-05-2009
20090284893Electrostatic chuck - An electrostatic chuck of the invention includes a ceramic dielectric made of a sintered body containing alumina and titanium oxide, with maximum particle size of segregation bodies of titanium compounds being smaller than average particle size of alumina, the ceramic dielectric having a volume resistivity of 1011-19-2009
20100039747ELECTROSTATIC CHUCK ASSEMBLY - Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.02-18-2010
20100103583WAFER GROUNDING METHODOLOGY - An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process.04-29-2010
20100103584ELECTROSTATIC CHUCKING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - An electrostatic chucking apparatus and a method for manufacturing the same is disclosed, which is capable of enabling the increase of lifetime of an electrostatic chuck and realizing a uniform temperature gradient in an entire substrate by preventing an insulating material from being etched, the electrostatic chucking apparatus comprising a base member; and an electrostatic chuck, loaded onto the base member, for chucking a substrate by an electrostatic force, wherein the electrostatic chuck comprises an insulating member formed on the base member and provided with a plurality of first insulating sheets of aluminum nitride; a heater for heating the substrate, the heater positioned among the plurality of first insulating sheets; a direct current electrode formed on at least one first insulating sheet provided above the heater among the plurality of first insulating sheets, the DC electrode electrically connected with a direct current power source; and an insulator etch stopping layer, formed of aluminum oxide on an entire surface of the insulating member, for preventing the insulating member from being etched.04-29-2010
20100110605ELECTROSTATIC CHUCK ASSEMBLY FOR PLASMA REACTOR - Provided is an electrostatic chuck assembly for a plasma reactor. The assembly includes an electrostatic chuck, an electrostatic chuck cover ring, and a cathode assembly cover ring. The electrostatic chuck includes a body part and a protrusion part. The body part has a disk shape of a first diameter. The protrusion part is formed integrally with the body part and protrudes from the body part, and has a disk shape of a second diameter less than the first diameter. The electrostatic chuck cover ring is disposed to surround an outer circumference of the protrusion part. The cathode assembly cover ring is disposed at an upper part of the cathode assembly to surround an outer circumference of the electrostatic chuck cover ring and an outer circumference of the body part.05-06-2010
20100110604ELECTROSTATIC CHUCK GROUND PUNCH - An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.05-06-2010
20130027838ELECTROSTATIC CHUCK - An electrostatic chuck includes: a ceramic substrate; a ceramic dielectric body provided on a top side of the ceramic substrate and having a first major surface where a processing target substrate is to be mounted; and an electrode provided between the ceramic substrate and the ceramic dielectric body. A material of the ceramic dielectric body is a ceramic sintered body. A plurality of protrusions and a groove for supplying a gas are provided on the first major surface of the ceramic dielectric body. A through hole is provided in a bottom face of the groove, the through hole penetrating to a second major surface of the ceramic substrate on a side opposite to the first major surface. A distance between the electrode and the groove is greater than or equal to a distance between the electrode and the first major surface.01-31-2013
20130070384High Surface Resistivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1003-21-2013
20130088808ELECTROSTATIC CHUCK - Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for retaining a substrate includes a base plate, a ceramic plate, supported by the base plate, having a substrate supporting surface, a first plurality of electrodes disposed within the ceramic plate having a first polarity, and a second plurality of electrodes disposed within the ceramic plate have a second polarity opposite from the first polarity, wherein the first and second plurality of electrodes are independently controllable to provide a desired chucking power and frequency.04-11-2013
20130088809ELECTROSTATIC CHUCK WITH TEMPERATURE CONTROL - Embodiments of an apparatus for controlling a temperature of an electrostatic chuck in a process chamber are provided herein. In some embodiments, the apparatus includes an electrostatic chuck disposed in a process chamber, the electrostatic chuck including a ceramic plate having a substrate supporting surface, and a cooling assembly including a plurality of cooling plates disposed below the electrostatic chuck to adjust the cooling capacity of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an inner cooling plate configured to control a temperature of a center portion of the electrostatic chuck, and an outer cooling plate configured to control a temperature of an outer portion of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an upper cooling plate that contacts a bottom surface of the electrostatic chuck, and a lower cooling plate which contacts a bottom surface of the upper cooling plate.04-11-2013
20090040682Method of de-chucking wafer using direct voltage and alternating voltage, and apparatus for fabricating semiconductor device using the same - Example embodiments provide a method of de-chucking a wafer by alternating between using a direct voltage and an alternating voltage, and an apparatus for fabricating a semiconductor device using the same. The method of de-chucking a wafer comprises interrupting a chucking voltage applied to an electrostatic chuck, applying a first de-chucking voltage to the electrostatic chuck, and applying a second de-chucking voltage to the electrostatic chuck.02-12-2009
20110058303Wafer Support Member, Method for Manufacturing the Same and Electrostatic Chuck Using the Same - To provide a wafer support member that improves soaking properties of heating, the first wafer support member which comprises a base, an insulating material and a bonding layer that bonds the base and the insulating material, wherein the bonding layer has a stacked structure of a plurality of layers including a first layer and a second layer located closer to the insulating material than the first layer, and the first layer and the second layer have different thicknesses.03-10-2011
20130058001ELECTROADHESIVE GRIPPING - An electroadhesive gripping device or system includes a plurality of electroadhesive gripping surfaces, each having electrode(s) and each configured to be placed against respective surface regions of a foreign object, such that one or more electroadhesive forces can be provided between the electroadhesive gripping surfaces and the foreign object. Such electroadhesive forces operating to hold the foreign object against the electroadhesive gripping surfaces while the foreign object is held or moved by the electroadhesive gripping system. The electroadhesive gripping surfaces can be arranged onto a plurality of continuous fingers, and various gripping surfaces on each finger can be coupled together and manipulated with respect to each other by an actuating component, such as a cable actuator. A variable voltage can be delivered to the electrodes to control the amount of electroadhesive force generated, such that only a portion of a foreign object is held or moved.03-07-2013
20110013338Electrostatic chuck device - The object of this invention is to provide an electrostatic chuck device which can properly and promptly diselectrify a substrate to be processed. In an electrostatic chuck device attracting a substrate to be processed on the surface of a susceptor electrically, a diselectrifying circuit is provided which includes diselectrifying electrode means facing the surface of the susceptor, a diselectrifying potential, and a diselectrifying resistance connected between the diselectrifying electrode means and the diselectrifying potential. The resistance value of the diselectrifying resistance is established such that it is lower than that of an insulating layer of the surface of the susceptor and the diselectrifying resistance can hold the potential of the substrate during an electrostatic chuck operation, such that the diselectrifying resistance can dissipate the potential of the substrate into the ground potential when the electrostatic chuck is canceled. This structure can thus appropriately and promptly diselectrify the substrate.01-20-2011
20090067114Non Contact Substrate Chuck - A chuck for releasably retaining a substrate, where the chuck has a body with a substrate receiving surface disposed in an X-Y coordinate plane and adapted to receive the substrate. The body has gas pressure delivery channels and gas vacuum drawing channels, where the gas pressure delivery channels and gas vacuum drawing channels are mutually exclusive within the body. The substrate receiving surface has gas pressure delivery portions in communication with the gas pressure delivery channels, for delivering a gas pressure against the substrate while the substrate is retained by the chuck, and thereby keeping the substrate from contacting the substrate receiving surface. The substrate receiving surface also has gas vacuum drawing portions in communication with the gas vacuum drawing channels, for drawing a gas vacuum against the substrate while the substrate is retained by the chuck, and thereby retaining the substrate proximate the substrate receiving surface. Retaining means retain the substrate in X-Y directions from sliding off of the substrate receiving surface.03-12-2009
20120236458PROCESSING AN EMBEDDED METAL FILM, AND COMPONENT WITH AN EMBEDDED METAL FILM - A method for processing a metal film (09-20-2012
20100309603ELECTROSTATIC-TYPE REINFORCEMENT APPARATUS - A reinforcement apparatus is for reinforcing a thin plate-like reinforcement object which is required to be temporarily reinforced in operating processes. The electrostatic-type reinforcement apparatus includes a reinforcement material body including a thin plate type electrostatic holding part formed by burying an electrode part into an electric insulating layer, and a voltage controller constituted to be separated from the reinforcement material body and having a first connecting terminal configured to allow an reinforcement object conducted to an earth and a second connecting terminal configured to allow the electrode part to be conducted to an earth or a high voltage. The voltage controller includes an attracting process part configured to attract the reinforcement object by generating an attraction force in the electrostatic holding part by supplying an electric charge of a reverse polarity to the charges supplied to the electrode part to the reinforcement object from the earth and an attraction releasing process part configured to cancel an electrostatic attracting ability by releasing charges stored in the reinforcing object and the electrode part from the earth.12-09-2010
20100067165Electrostatic chuck and method for manufacturing same - An electrostatic chuck includes a ceramic member containing yttrium oxide as a main component, containing cerium element and obtained by firing under a nonoxidizing atmosphere. The electrostatic chuck that has high corrosion resistant characteristics and includes a ceramic member having a low volume resistivity with a strong attracting force that utilize the Johnsen-Rahbeck force can be obtained.03-18-2010
20080266747ELECTROSTATIC CHUCK - In an electrostatic chuck for chucking a glass substrate, the electrostatic chuck includes a pair of electrodes embedded in a ceramic material and interlaced with each other, where a volume resistivity of the ceramic material is 1×1010-30-2008
20090284894Electrostatic chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions extending to a height above portions of the surface layer surrounding the protrusions to support the substrate upon the protrusions during electrostatic clamping of the substrate. The protrusions are substantially equally spaced across the surface layer as measured by a center to center distance between pairs of neighboring protrusions.11-19-2009
20100118464ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - In an electrostatic chuck provided inside a processing chamber of a substrate processing apparatus and including a high voltage electrode plate for electrostatically attracting a target substrate, a heater includes a plate-shaped resistor and two electrode plates respectively brought into surface-contact with a front surface and a rear surface of the resistor, and one of the two electrode plates of the heater serves as the high voltage electrode plate for electrostatically attracting the target substrate.05-13-2010
20110299218HEATED ANNULUS CHUCK - A clamping device and method is provided for securing first and second workpieces having different sizes to a clamping device and providing thermal conditioning thereto. An electrostatic clamping plate having a diameter associated with the first workpiece surrounds a central portion of the clamp. A non-electrostatic central portion provides a heater within the annulus, wherein the central portion has a diameter associated with the second workpiece. A workpiece carrier is provided, wherein the workpiece carrier is configured to hold the second workpiece above the heater, and wherein a diameter of the workpiece carrier is associated with the electrostatic clamping plate annulus. The annulus selectively electrostatically clamps the workpiece carrier or a circumferential portion of the first workpiece to its clamping surface, therein selectively maintaining a position of the first or second workpiece with respect to the annulus or non-electrostatic central portion.12-08-2011
20110299217HEATED ELECTROSTATIC CHUCK INCLUDING MECHANICAL CLAMP CAPABILITY AT HIGH TEMPERATURE - An electrostatic clamp is provided, having a clamping plate, wherein a clamping surface of the clamping plate is configured to contact the workpiece. A voltage applied to one or more electrodes selectively electrostatically attracts the workpiece to the clamping surface. One or more auxiliary clamping members are further provided wherein the one or more auxiliary clamping members are configured to selectively secure at least a portion of the workpiece to the clamping surface. A temperature monitoring device configured to determine a temperature of the workpiece is provided, and a controller is configured to selectively clamp the workpiece to the clamping surface via a control of the voltage to the one or more electrodes and the one or more auxiliary clamping members, based, at least in part, on the temperature of the workpiece.12-08-2011
20110292562MATCHED COEFFICIENT OF THERMAL EXPANSION FOR AN ELECTROSTATIC CHUCK - An apparatus and method are provided for selecting materials for forming an electrostatic clamp. The electrostatic clamp has a backing plate having a first coefficient of thermal expansion, wherein the backing plate provides structural support and rigidity to the electrostatic clamp. The electrostatic clamp further has a clamping plate having a clamping surface associated with contact with a workpiece, wherein the clamping plate has a second coefficient of thermal expansion associated therewith. The clamping plate is bonded, attached or grown to the backing plate, wherein minimal deflection of the clamping plate is evident across a predetermined temperature range. The first coefficient of thermal expansion and second coefficient of thermal expansion, for example, are substantially similar, and vary by no greater than a factor of three.12-01-2011
20110292561TRAY FOR TRANSPORTING WAFERS AND METHOD FOR FIXING WAFERS ONTO THE TRAY - A tray for transporting a wafer is herein provided, which can control the temperature of the wafer upon the processing thereof, and which can easily fix the wafer without reducing the effective area on the surface of the wafer and without requiring much time for the adhesion of the wafer thereto and without requiring any post-treatment after the wafer is detached from or attached to the tray. The tray 12-01-2011
20090086400ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck for holding a substrate has a circular dielectric member having a top surface configured to support the substrate, the top surface having a plurality of mesas consisting of n subsets, wherein mesas of each subset are distributed along one of a plurality of concentric bolt circles of increasing radii, and wherein all of the concentric bolt circles center about the center of the circular dielectric member.04-02-2009
20090097185Time-based wafer de-chucking from an electrostatic chuck having separate RF bias and DC chucking electrodes - An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.04-16-2009
20090168292ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - There is provided an electrostatic chuck for adsorbing and holding an adsorption object placed on an upper surface of a base body having an electrostatic electrode embedded therein and for filling inert gas of which a pressure is adjusted into a space formed between the upper surface of the base body and a lower surface of the adsorption object, wherein the base body includes a gas discharge portion embedded therein so as to discharge the inert gas to the space and a gas path embedded therein so as to introduce the inert gas into the gas discharge portion while communicating with the gas discharge portion.07-02-2009
20080285203SUBSTRATE HOLD APPARATUS AND METHOD FOR JUDGING SUBSTRATE PUSH-UP STATE - A substrate hold apparatus is provided an electrostatic chuck for electrostatically attracting and holding a substrate thereon, a push-up member contactable with a position of vicinity of an edge of the substrate on the electrostatic chuck from below for pushing up the substrate, a drive apparatus for driving at least one of the electrostatic chuck and push-up member to thereby allow the push-up member to push up the substrate, a force sensor for detecting a force applied to the push-up member in an pushing-up operation, and a control unit wherein the control unit is configured to measure the force from the force sensor as a first measurement, output a normal state signal when the measured force in the first measurement is equal to or larger than a lower limit value and is equal to or smaller than a upper limit value.11-20-2008
20100008014METHOD AND APPARATUS FOR SUCURELY DECHUCKING WAFERS - A wafer stage installed in a process chamber for safely dechucking a wafer is provided. In one embodiment, the wafer stage comprises: a chuck support for supporting a chuck; a chuck mounted on the chuck support for receiving and attaching a wafer thereto; a support lift means for supporting the wafer; a driving means coupled to the support lift means for gradually raising the support lift means to contact the wafer in response to a variable quantity; a controller for receiving the variable quantity; and a regulating means coupled to the driving means and to the controller, the regulating means for controlling the variable quantity going to the driving means when a predetermined variable quantity is detected.01-14-2010
20090168291ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - There is provided an electrostatic chuck for placing an adsorption object or a base body having an electrostatic electrode embedded therein and generating a coulombic force between the adsorption object and the electrostatic electrode by applying a voltage to the electrostatic electrode so as to hold the adsorption object in an adsorption state, wherein the base body includes a upper surface of the base body opposed to the adsorption object and a protrusion portion provided in the upper surface of the base body so as to come into contact with the adsorption object, and wherein the protrusion portion is provided in a region except for an outer edge portion of the upper surface of the base body, and the outer edge portion is substantially formed in the same plane as that of the upper surface of the base body.07-02-2009
20080278883ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing an electrostatic chuck, the method includes: a step of providing an electrostatic chucking portion including an electrode to which a voltage is applied and a film-like insulating layer covering the electrode; a step of bonding an elastomer layer onto the electrostatic chucking portion; a step of bonding a metal base onto the elastomer layer such that recess portions formed on a surface of the metal base face the elastomer layer.11-13-2008
20090310274ELECTROSTATIC CHUCK AND SUBSTRATE TEMPERATURE CONTROL FIXING APPARATUS - There is provided an apparatus including: an electrostatic chuck for holding an object; and a base plate which supports the electrostatic chuck and controls a temperature of the electrostatic chuck. The electrostatic chuck is fixed onto the base plate via an adhesive layer. The electrostatic chuck includes: a base; an electrostatic electrode built in the base; and a mounting portion containing a dielectric material and detachably mounted on the base. The object is mounted on the mounting portion.12-17-2009
20110149462ELECTROSTATIC CHUCK, PRODUCTION METHOD OF ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK DEVICE - The present invention relates to an electrostatic chuck comprising a specific composite oxide sintered body, wherein in the sintered body, an L* value of a reflected color tone measured by a C light source on a 2° angle visual field condition is 10 or more and 50 or less in a CIEL*a*b* color system prescribed in JIS Z 8729-1994 and an electrostatic chuck device comprising an electrostatic chuck member (A) having a tabular body provided with a clamping surface for clamping a sample by the electrostatic force, an internal electrode layer for clamping a sample by electrostatic force which is provided on the back face of the tabular body and an insulation layer, wherein at least the sample clamping surface of the tabular body in the electrostatic chuck member (A) comprises the composite oxide sintered body constituting the electrostatic chuck described above.06-23-2011
20080266746ELECTROSTATIC CHUCK - This invention relates to a suitable electrostatic chuck to hold a substrate during the manufacture of a semiconductor integrated circuit having excellent cooling performance and insulation performance, and a low level of particulate generation, which is comprised of an electrostatic chuck, comprising a metal substrate, a first insulating layer of silicone rubber formed directly or via an adhesive layer on the metal substrate and having a thermal conductivity of 0.5 W/mK or more, an electrically conducting pattern formed directly or via an adhesive layer on this first insulating layer, a second insulating layer of an insulating polyimide film formed directly or via an adhesive layer on this electrically conducting pattern, and a third insulating layer formed directly or via an adhesive layer on this second insulating layer, wherein this third insulating layer is a silicone rubber containing reinforcing silica, this layer not containing any thermally conductive filler having an average particle size of 0.5 μm or more.10-30-2008
20090086401ELECTROSTATIC CHUCK APPARATUS - An electrostatic chuck includes an angled conduit, or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit and/or the angled laser drilled passage extends along an axis different from an axis of the electric field generated to hold a substrate to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member and the electrode. Finally, the surface of the dielectric member may comprise embossments arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution.04-02-2009
20090273878GAS BEARING ELECTROSTATIC CHUCK - An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas. A seal is disposed in the annulus region of the clamping plate, wherein the seal is configured to generally prevent a leakage of the cushion of gas from the central region to an environment external to the annulus region. One or more electrodes are further electrically connected to a first voltage potential to provide a first clamping force.11-05-2009
20090103232Substrate Holding System and Exposure Apparatus Using the Same - A substrate holding system for holding a substrate based on vacuum attraction and electrostatic attraction including a rim configured to support the substrate, a protrusion for the electrostatic attraction, configured to support the substrate inside the rim, and a protrusion for the vacuum attraction, configured to support the substrate inside the rim. A substrate supporting surface area of the protrusion of the electrostatic attraction is larger than a substrate supporting surface area of the protrusion for the vacuum attraction.04-23-2009
20080212255Electrostatic chuck and method for manufacturing same - An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode. The insulative adhesive is interposed also between the insulator film and a portion of the surface of the dielectric substrate where the electrode is not formed, and the insulative adhesive has a thermal conductivity of 1 W/mK or more.09-04-2008
20100061032ELECTROSTATIC CHUCK ELECTRICAL BALANCING CIRCUIT REPAIR - The present invention includes methods and apparatus for repairing an electrical connection between bipolar electrodes contained within an electrostatic chuck and a conductive mask disposed atop the electrostatic chuck, known as a balancing circuit. Embodiments of the invention are particularly useful after removal of an electrostatic chuck for refurbishment.03-11-2010
20080239614ELECTROSTATIC CHUCK WITH SEPARATED ELECTRODES - Electrostatic clamping devices and methods for reducing contamination to a workpiece coupled to an electrostatic clamping device are disclosed. According to an embodiment an electrostatic clamping device for coupling a workpiece comprises: an embossment portion on a surface of a body to contact the workpiece; and at least two electrodes within the body; wherein the two electrodes are separated by a separation portion below the embossment portion.10-02-2008
20090034151Pressure Assisted Wafer Holding Apparatus and Control Method - An electrostatic wafer holding apparatus includes an electrostatic chucking pedestal and a bi-directional backside conduit in fluid communication with a backside of the chucking pedestal. The bi-directional backside conduit is in fluid communication with a backside carrier gas supply line, and is further in fluid communication with a vacuum supply line.02-05-2009
20090034150SUBSTRATE HOLDING SYSTEM AND EXPOSURE APPARATUS USING THE SAME - A substrate holding system including a substrate attracting device, an exhausting device, and a control device to operate the exhausting device so that a pressure around the substrate and a pressure at an interval between the substrate and the substrate attracting device are lowered to a first pressure and that only the pressure at the interval is subsequently lowered to a second pressure, which is lower than the first pressure.02-05-2009
20090034147Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing - A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.02-05-2009
20100014208SUBSTRATE HOLDER - A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system.01-21-2010
20080285204ELECTROSTATIC CHUCK STRUCTURE FOR SEMICONDUCTOR MANUFACTURING APPARATUS - An electrostatic chuck structure according to example embodiments of the present invention may include at least one specific region of a conductor having a thickness relatively smaller than those of other regions, at least one specific region of a dielectric having a thickness relatively larger than those of other regions, or at least one specific region of a conductor having a thickness relatively smaller than those of other regions and at least one specific region of a dielectric having a thickness relatively larger than those of other regions. Therefore, etching rate and CD uniformity can be improved during a semiconductor manufacturing process.11-20-2008
20110007447SUBSTRATE HOLDER, SUBSTRATE HOLDER UNIT, SUBSTRATE TRANSPORT APPARATUS, AND SUBSTRATE BONDING APPARATUS - A substrate holder is reliably transported in a state of holding a substrate. There is provided a substrate holder for holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate holder is to be transported in a state of holding the substrate. The substrate holder includes a holder body that is to have the substrate placed thereon, and a connector terminal that is externally exposed through the holder body, where the connector terminal is attachable to and detachable from an external power supply terminal. There is also provided a substrate transport apparatus for transporting a substrate holder holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate transport apparatus includes a placement section that has a placement surface on which the substrate holder is placed, where the placement section holds the substrate holder, and a power supply terminal that supplies power to the substrate holder placed on the placement surface.01-13-2011
20080266745ELECTROSTATIC CHUCK WITH HEATER - An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina; an electrode disposed in an upper part of the base: and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium.10-30-2008
20100142113DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK - One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.06-10-2010
20100271745ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE - An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.10-28-2010
20090109595METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS - A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.04-30-2009
20090161285ELECTROSTATIC CHUCK AND METHOD OF FORMING - An electrostatic chuck includes an insulating layer, a conductive layer overlying the insulating layer, a dielectric layer overlying the conductive layer, the dielectric layer having pores forming interconnected porosity, and a cured polymer infiltrant residing in the pores of the dielectric layer.06-25-2009
20090161286ELECTROSTATIC CHUCK SUPPORT ASSEMBLY - A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.06-25-2009
20090034149Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing - A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.02-05-2009
20090141418ELECTROSTATIC CHUCK AND APPARATUS HAVING THE SAME - An electrostatic chuck and an apparatus having the electrostatic chuck are provided. The electrostatic chuck may attract a substrate during a substrate assembling process for manufacturing a flat display panel. An elastic layer made of an elastic material may be provided in a base part of the electrostatic chuck, thus preventing non-uniform stress from being distributed on the substrate due to external force, therefore maintaining the flatness of the substrate and improving the quality of assembled substrates. The electrostatic chuck may include an electrostatic force generating part provided on an upper surface of the base part, the force generating part including an insulating layer, an electrode layer, a dielectric layer. The base part may be provided with the elastic layer made of the elastic material having elastic restoring force.06-04-2009
20090201622Detachable electrostatic chuck for supporting a substrate in a process chamber - A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.08-13-2009
20110141650ELECTROSTATIC CHUCK DEVICE AND METHOD FOR DETERMINING ATTRACTED STATE OF WAFER - Provided is an electrostatic chuck device including attraction determining means, which enables a quick and accurate recognition of an attracted state of a substrate, and also provided is a method of determining an attracted state of a substrate, which enables a quick and accurate recognition of the attracted state of the substrate in the electrostatic chuck device. The electrostatic chuck device includes: an electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on an upper surface side of a metal base; and attraction determining means for determining the attracted state of the substrate. Further, the method of determining an attracted state of a substrate is used for the electrostatic chuck device including the electrostatic chuck for attracting the substrate, the electrostatic chuck being provided on the upper surface side of the metal base, the method including obtaining, by a heat flux sensor, a flow of heat transferred from the substrate via the electrostatic chuck, to thereby determine the attracted state of the substrate.06-16-2011
20090002913Polyceramic e-chuck - The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, for example, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about 1E10 ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m. The electrostatic chuck may be bonded to heat sinks coated with anti-arc dielectrics. The heat sink can also be used as an RF electrode. The heat sink may have provisions for coolants and gas channels to feed a cooling gas to the backside of a wafer. The heat sink may have feed thrus to power the segmented electrodes in the electrostatic chuck. The passages for the feed thrus, gas feed holes and lift pins may be lined with ceramics or polymers to prevent any discharge to the heat sink. The electrostatic chuck is for clamping work substrates like Si, GaAs, SiO01-01-2009
20100177455METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.07-15-2010
20090273877Electrostatic Chuck - The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 1011-05-2009
20100177454Electrostatic chuck with dielectric inserts - An electrostatic chuck with dielectric inserts provides conveyance of cooling gas while eliminating arc path to a workpiece surface. The electrostatic chuck includes the workpiece surface configured to support a substrate such as a semiconductor wafer, a plenum configured to carry a cooling gas, and a plurality of dielectric inserts configured to provide communication of the cooling gas between the plenum and the workpiece surface. The dielectric inserts may comprise a passage to provide the communication of the cooling gas. The dielectric inserts may be further configured to prevent line-of-sight between the workpiece surface of the electrostatic chuck and a conducting surface within the electrostatic chuck.07-15-2010
20120033340ELECTROSTATIC CHUCK AND METHODS OF USE THEREOF - An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk.02-09-2012
20100188794Electrostatic chuck and device of manufacturing organic light emitting diode having the same - The present invention discloses an electrostatic chuck sucking and supporting a substrate with an electrostatic force and an OLED manufacturing apparatus having the same. The electrostatic chuck includes an insulating plate having at least one opening penetrating a center thereof, a pair of electrodes mounted on the insulating plate, a first controller applying a voltage to the pair of electrodes, and an electrostatic charge removing unit disposed near the insulating plate and emitting ions into the at least one opening to remove electrostatic charges distributed around a side of the insulating plate.07-29-2010
20100002355WAFER SUPPORT DEVICE AND COMPONENT USED FOR THE SAME - A wafer support device 01-07-2010
20100020463HIGH TEMPERATURE ELECTROSTATIC CHUCK AND METHOD OF USING - An electrostatic chuck configured for high temperature reduced-pressure processing is described. The electrostatic chuck comprises a chuck body having an electrostatic clamp electrode and an optional heating element, and a heat sink body having a heat transfer surface spaced in close relationship with an inner surface of the chuck body, wherein the heat sink body is configured to remove heat from the chuck body due to the close proximity of the inner surface and the heat transfer surface. The electrostatic chuck further comprises a table assembly configured to support the chuck body and the heat sink body, and an expansion joint disposed between the chuck body and the table assembly, and configured to sealably join the chuck body to the table assembly while accommodating for differential thermal expansion of the chuck body and the table assembly.01-28-2010
20110110010WALL CRAWLING ROBOTS - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.05-12-2011
20100220425ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric layer 09-02-2010
20100002354ELECTROSTATIC CHUCK DEVICE - An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (01-07-2010
20100254064METHOD FOR MANUFACTURING GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, GAS SUPPLY STRUCTURE IN ELECTROSTATIC CHUCK APPARATUS, AND ELECTROSTATIC CHUCK APPARATUS - Provided is a method of manufacturing a gas supply structure for use in an electrostatic chuck apparatus having an electrostatic chuck on the upper surface side of a metal base (10-07-2010
20110058302METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL - A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.03-10-2011
20100128409ALUMINUM NITRIDE SINTERED PRODUCT, METHOD FOR PRODUCING THE SAME, AND ELECTROSTATIC CHUCK INCLUDING THE SAME - A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu05-27-2010
20100254063STEP DOWN DECHUCKING - A method and an apparatus for dechucking an electrostatic chuck are disclosed. The gas escapes through an opening between a wafer and a chuck in each stage of a multi-stages process. In each stage, during at least a portion of the stage, the chucking voltage is reduced to a value less than the least threshold voltage needed for holding the wafer, so that the wafer is pushed away from the chuck by the gas. Hence, the gas can escape from an opening between the wafer and the chuck, thereby increasing the dechucking rate. By controlling the decrement and/or the duration of the reduced voltage, any potential damages due to the pushed-away wafer can be minimized.10-07-2010
20110032654Electrostatic Clamp Optimizer - A system which may be used to control, monitor and optimize an electrostatic clamp is disclosed. In one embodiment of the invention, there is a computer, a control circuit, and at least one amplifier. Also, a signal assessing circuit may be included and used to provide a sensing signal to an output signal of the control circuit. The signal assessing circuit may provide a sensing signal that can be used to monitor the capacitance of the electrostatic clamp. Further, the signal assessing circuit may include circuitry which monitors performance of the electrostatic clamp, and provide performance information to the control circuit.02-10-2011
20100321856METHOD OF PLATEN FABRICATION TO ALLOW ELECTRODE PATTERN AND GAS COOLING OPTIMIZATION - An electrode pattern and layered assembly is disclosed. This assembly utilizes multiple-piece construction, including at least two electrically conductive layers and at least three electrically insulating layers. By incorporating a second electrically conductive layer, each electrode can be divided into two or more separate portions on the top layer, and joined together using the second conductive layer. Connections between the two conductive layers can be made using any suitable technique, including through-hole vias, conductive rods and the like. The use of a second electrically conductive layer also allows for a different gas distribution strategy. The use of multiple conductive layers allows the use of one or more concentric channels to be used through which the gas can be injected.12-23-2010
20110116207SUBSTRATE MOUNTING TABLE OF SUBSTRATE PROCESSING APPARATUS - A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring.05-19-2011
20090034148Method of making an electrostatic chuck with reduced plasma penetration and arcing - A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.02-05-2009
20100053841WAFER PROCESSING APPARATUS HAVING A TUNABLE ELECTRICAL RESISTIVITY - An article with an etch resistant coating is disclosed. The article is a heating element, wafer carrier, or electrostatic chuck. The article has a base substrate made of a ceramic or other material, and further has one or more electrodes for resistance heating or electromagnetic chucking or both. The eth resistant coating has a plurality of regions made from materials having different electrical volume resistivities, such that the overall coating has a bulk resistivity that can be tailored by varying the relative size of each region.03-04-2010
20110026187Conductive Seal Ring Electrostatic Chuck - The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer.02-03-2011
20100254065ELECTROSTATIC CHUCK - A ceramic electrostatic chuck according to the present invention includes a dielectric layer, a support layer in contact with the back side of the dielectric layer, and an embedded electrostatic electrode. A wafer can be placed on the dielectric layer. The dielectric layer is formed of sintered aluminum nitride containing Sm and has a volume resistivity in the range of 4×1010-07-2010
20100097738ELECTROSTATIC CHUCK AND SUBSTRATE BONDING DEVICE USING THE SAME - An electrostatic chuck and a substrate bonding device equipped with the electrostatic chuck are disclosed. The electrostatic chuck in accordance with an embodiment of the present invention includes: an elastic holder, in which a center portion of one surface of the elastic holder is formed in a convex shape; an electrode, which is coupled to the elastic holder such that the elastic holder is electrically charged; and a holding unit, which holds the other surface of the elastic holder. The electrostatic chuck in accordance with an embodiment of the present invention can prevent a defect caused by a void formed between substrates while bonding the substrates.04-22-2010
20090021885Electrostatic Holding Apparatus, Vacuum Environmental Apparatus Using it and Joining Apparatus - An electrostatic holding apparatus is configured to electrostatically hold objects (W01-22-2009
20100277850Multi-Zone Electrostatic Chuck and Chucking Method - A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.11-04-2010
20110164343HYBRID ELECTROSTATIC CHUCK - An electrostatic chuck (07-07-2011
20100142114ELECTROSTATIC CHUCK WITH COMPLIANT COAT - The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.06-10-2010
20110096461SUBSTRATE FOR ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK - An electrostatic chuck includes a metal base member and an insulating substrate having an opposite surface to an attraction surface joined onto the base member via an adhesive layer. In the substrate, an electrode layer to which a direct current voltage for attraction is applied is embedded in a portion of the substrate, close to the attraction surface. In addition, a plurality of independent RF electrode layers to which different radio frequencies for plasma control are fed, respectively, are embedded in portions of the substrate, at an opposite side of the first electrode layer to the attraction surface. The RF electrode layers are arranged separately in different layers which are not on an identical plane in such a manner as to partially overlap each other in a plan view.04-28-2011
20110096460ELECTROSTATIC CHUCK - An electrostatic chuck has a structure in which a heater is sandwiched between a base member and an electrostatic chuck substrate, the heater being bonded to the base member with an adhesive layer interposing therebetween. The adhesive layer interposing between the heater and the base member has a structure in which a first adhesive layer and a second adhesive layer are stacked, the first adhesive layer being formed by curing an adhesive having high thermal conductivity, the second adhesive layer being formed as gel by curing an adhesive having lower viscosity than the adhesive of the first adhesive layer. Preferably, the first and second adhesive layers are both made of a silicone-based resin.04-28-2011
20100110603WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS - An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.05-06-2010
20090174983ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME - An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.07-09-2009
20100027187Electroadhesion - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.02-04-2010
20080273284Electrostatic chuck - The present invention provides an electrostatic chuck, which has high plasma resistance and high capability of cooling a material to be clamped. As for the basic structure of the electrostatic chuck, an insulating film is formed on a surface of a metal plate by flame spraying, and a dielectric substrate is bonded onto the insulating film by an insulating adhesive layer. The top surface of the dielectric substrate is a surface for mounting a material to be clamped W such as a semiconductor wafer. Electrodes are formed on the lower surface of the dielectric substrate.11-06-2008
20110051307PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL AND METHODS THEREOF - An arrangement for securing a wafer during substrate processing is provided. The arrangement includes a power supply and an electrostatic chuck (ESC). The ESC supports the wafer and includes a positive and a negative terminal. A positive high voltage is provided to the positive terminal through an RF filter and a negative high voltage is provided to the negative terminal through the RF filter. The arrangement also includes a first and a second trans-impedance amplifiers (TIAs) that measure a first set of voltages for determining a value of a positive load current applied to the positive terminal and a third and fourth TIAs that measure a second set of voltages for determining a value of a negative load current applied to the negative terminal. The arrangement yet also includes a program to adjust a bias voltage using the values of the positive load current and the negative load current.03-03-2011
20120307412ELECTROSTATIC CHUCK ALN DIELECTRIC REPAIR - The present invention generally relates to a refurbished electrostatic chuck and a method of refurbishing a used electrostatic chuck. Initially, a predetermined amount of dielectric material is removed from the used electrostatic chuck to leave a base surface. Then, the base surface is roughened to enhance the adherence of new dielectric material thereto. The new dielectric material is then sprayed onto the roughened surface. A mask is then placed over the new dielectric material to aid in the formation of mesas upon which a substrate will sit during processing. A portion of the new dielectric layer is then removed to form new mesas. After removing the mask, edges of the mesas may be smoothed and the refurbished electrostatic chuck is ready to return to service after cleaning.12-06-2012
20080285202IN SITU MONITORING OF WAFER CHARGE DISTRIBUTION IN PLASMA PROCESSING - A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.11-20-2008
20100265631REMOVAL OF CHARGE BETWEEN A SUBSTRATE AND AN ELECTROSTATIC CLAMP - An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 10-21-2010
20130010398Materials for Electroadhesion and Electrolaminates - An electroadhesive device includes an outer surface adapted to interface with a surface of a foreign substrate, a plurality of electrodes (01-10-2013
20100008016ELECTROSTATIC CHUCK ASSEMBLY WITH CAPACITIVE SENSE FEATURE, AND RELATED OPERATING METHOD - A semiconductor workpiece processing system for treating a workpiece, such as a semiconductor wafer, is provided. A related operating control method is also provided. The system includes an electrostatic chuck configured to receive a workpiece, and a clamping voltage power supply coupled to the electrostatic chuck. The electrostatic chuck has a clamping electrode assembly, and the clamping voltage power supply is coupled to the clamping electrode assembly. The clamping voltage power supply includes a direct current (DC) voltage generator configured to generate a DC clamping voltage for the clamping electrode assembly, an alternating current (AC) voltage generator configured to generate an AC excitation signal for the clamping electrode assembly, and a processing architecture coupled to the clamping electrode assembly. The processing architecture is configured to analyze attributes of a workpiece presence signal obtained in response to the AC excitation signal, and, based on the attributes, verify proper/improper positioning of the workpiece relative to the electrostatic chuck.01-14-2010
20110063772METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK - A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table.03-17-2011
20110063771ELECTROSTATIC CHUCK AND METHOD FOR PRODUCING THE SAME - An electrostatic chuck 03-17-2011
20120044609Electrostatic Chuck With Polymer Protrusions - In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of polymer protrusions and a charge control layer to which the plurality of polymer protrusions adhere, the plurality of polymer protrusions extending to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.02-23-2012
20090040681Electrode Sheet for Electrostatic Chuck, and Electrostatic Chuck - An electrostatic chuck electrode sheet which allows the difference in capacitance between electrodes due to the presence or absence of a substrate to be increased to a level which can be accurately detected using a known substrate detection device, and allows an electrostatic chuck to exhibit an excellent attraction force, and an electrostatic chuck using the electrode sheet, are disclosed. The electrode sheet has a layered structure in which a first insulating layer, a first electrode layer, an inter-electrode insulating layer, a second electrode layer, and a second insulating layer are stacked and attracts a substrate on the first insulating layer, the first electrode layer having a plurality of openings in a specific planar area, and the second electrode layer having opening equivalent portions provided at positions at which the openings in the first electrode layer are projected onto the second electrode layer in a depth direction of the electrode sheet and having almost the same area as the projected openings, and connection portions that connect the opening equivalent portions. The electrostatic chuck is formed using the electrode sheet.02-12-2009
20090097184ELECTROSTATIC CHUCK ASSEMBLY - The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.04-16-2009
20120154974HIGH EFFICIENCY ELECTROSTATIC CHUCK ASSEMBLY FOR SEMICONDUCTOR WAFER PROCESSING - The present invention generally provides a high efficiency electrostatic chuck including a flex stack having an electrode disposed between two layers of dielectric material. At least one of the layers is a standard or high purity thermoplastic film. The flex stack may have a matte finish on the substrate supporting surface to provide benefits such as improved temperature distribution across the surface of the chuck. The non-substrate supporting or pedestal receiving side of the flex stack may be plasma treated to provide a desired surface finish, which is then bonded to a pedestal using an acrylic or epoxy adhesive resulting in superior bonding strength compared to traditional polymer electrostatic chucks. The electrode may be a sheet electrode on a release liner, which enables ease of manufacturing.06-21-2012
20120300357METHOD AND APPARATUS FOR REPAIRING AN ELECTROSTATIC CHUCK DEVICE, AND THE ELECTROSTATIC CHUCK DEVICE - In a repairing method for an electrostatic chuck device in which at least an adhesive layer and an attracting layer are provided on a metal base, a side surface of an eroded adhesive layer is wound with a string-like adhesive and thermal compression is performed thereafter. A repairing apparatus for an electrostatic chuck device, which is used in the repairing method, includes a rotatable table for rotating the electrostatic chuck device and a bobbin for supplying the adhesive to the adhesive layer.11-29-2012
20100027188Replaceable Electrostatic Chuck Sidewall Shield - A replaceable electrostatic chuck sidewall shield is provided. The replaceable electrostatic chuck sidewall shield fills or partially fills an indentation located between a base member and a top member of an electrostatic chuck, such that the replaceable electrostatic chuck sidewall shield may protect an epoxy in the indentation or may replace the epoxy within the indentation. The replaceable electrostatic chuck sidewall shield may be fully contained with the indentation. The replaceable electrostatic chuck sidewall shield may also cover an epoxy in the indentation such that the replaceable electrostatic chuck sidewall shield protrudes beyond the indentation. In an alternate embodiment, the replaceable electrostatic chuck sidewall shield substantially covers the area in which a conductive pole is embedded in a bipolar electrostatic chuck.02-04-2010
20090135540Electrostatic holding apparatus and electrostatic tweezers using the same - To provide an electrostatic holding apparatus which is capable of performing handling for a long period of time even when a direct current high-voltage power supply is separated from the electrostatic holding apparatus. The electrostatic holding apparatus holds a workpiece to be held with an electrostatic force by applying prescribed voltages from the direct current high-voltage power supply to a plurality of electrode groups having the electrode groups as a holding section. The electrostatic holding apparatus is provided with an electrode potential drop modifying apparatus which modifies drops of potentials applied to the electrode groups by being separated from the direct current high-voltage power supply by switches. The electrode potential drop modifying apparatus includes, for instance, capacitors.05-28-2009
20110090613APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER - The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.04-21-2011
20110102965BIPOLAR ELECTROSTATIC CHUCK - Provided is a bipolar electrostatic chuck, which has excellent substrate attracting/holding performance when a voltage is applied, and excellent residual charges reducing performance when voltage application is stopped. The bipolar electrostatic chuck includes at least an electrode layer including a first electrode and a second electrode, and an upper insulating layer which forms a substrate attracting surface for attracting a substrate. In a case where a surface of the electrode layer is regarded to be divided into a plurality of virtual cells having a predetermined width (L) in an x direction and a y direction, first electrode sections forming the first electrode and second electrode sections forming the second electrode are alternately arranged in the plurality of virtual cells in the x direction, and are alternately arranged in the plurality of virtual cells in the y direction.05-05-2011
20120120544ELECTROADHESIVE DEVICES - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.05-17-2012
20120120545ELECTROSTATIC ATTRACTING STRUCTURE AND FABRICATING METHOD THEREFOR - Provided are an electrostatic attracting structure which allows a strongly integrated structure to be maintained when used, and also allows the structure to be changed freely in configuration after the use, and a method of fabricating the same. The electrostatic attracting structure includes: a plurality of sheet members each having an electrode which is sandwiched between two dielectric materials; and at least one attraction power source, in which the plurality of sheet members are stacked, and by applying a voltage between the electrodes of facing sheet members, the facing sheet members are electrically attracted and fixed, when the electrostatic attracting structure is used, the dielectric material of any one of or both of outermost sheet members attracts the object to be attracted, and after the use, the stacked plurality of sheet members are made separable from one another by canceling the application of the voltage.05-17-2012
20120250213SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. DC discharge is generated between a wafer and the chamber by setting the potential of the electrostatic electrode plate of the electrostatic chuck which is maintained at a first predetermined potential during a plasma etching process to a ground potential after the plasma etching process to increase the absolute value of the potential difference between the wafer and the chamber. DC discharge is then re-generated by applying, to the electrostatic electrode plate, DC voltage having the same potential as a second predetermined potential which is generated at the wafer after the DC discharge is generated, and by increasing the absolute value of the potential difference between the wafer and the chamber. The wafer is then easily removed from the electrostatic chuck.10-04-2012
20120250211MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS - An electrostatic chuck is provided with a ceramic substrate 10-04-2012
20100208409METHOD FOR OPTIMIZED REMOVAL OF WAFER FROM ELECTROSTATIC CHUCK - Systems and methods for optimally dechucking a wafer from an electrostatic chuck are described. The force on a lift-pin mechanism is monitored and a dechuck voltage is determined based on the force. The wafer is dechucked at the determined dechuck voltage.08-19-2010
20120134065ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas.05-31-2012
20090059462Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.03-05-2009
20100271746ELECTROADHESIVE DEVICES - Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.10-28-2010
20100008013METHOD AND APPARATUS FOR SAFELY DECHUCKING WAFERS - A wafer stage installed in a process chamber for safely dechucking a wafer is provided. In one embodiment, the wafer stage comprises: a chuck support for supporting a chuck; a chuck mounted on the chuck support for receiving and attaching a wafer thereto; a support lift means for supporting the wafer; a driving means coupled to the support lift means for gradually raising the support lift means to contact the wafer in response to a variable quantity; a sensor attached to the driving means for detecting a change in the variable quantity; and a controller for controlling the variable quantity to the driving means when a predetermined variable quantity is detected in comparison to the change in the variable quantity for a predetermined time.01-14-2010
20100008015CAPACITIVELY-COUPLED ELECTROSTATIC (CCE) PROBE ARRANGEMENT FOR DETECTING DECHUCKING IN A PLASMA PROCESSING CHAMBER AND METHODS THEREOF - A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.01-14-2010
20100284121ELECTROSTATIC CHUCK - An electrostatic chuck includes a dielectric board having an upper surface on which a plurality of projections for supporting a substrate on top surfaces and recesses surrounding the projections are formed, an electrode formed inside the dielectric board, and an external power supply which applies a voltage to the electrode. The dielectric board includes a conductor film formed on at least the top surface of each projection, and has a three-dimensional structure which causes the conductor film to generate a Johnson-Rahbeck force between the substrate and conductor film when a voltage is applied to the electrode.11-11-2010
20120262834ELECTROSTATIC CHUCK AND A METHOD FOR SUPPORTING A WAFER - An electrostatic chuck includes an isolating substrate that surrounds at least one electrode; multiple protrusions having upper portions arranged to contact a wafer; and at least one discharging element positioned between the at least one electrode and the upper portions of the multiple protrusions; which discharging element, once coupled to a discharging circuit, is arranged to discharge charge accumulated in the isolating substrate.10-18-2012
20080297971PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL - A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal (−ESC) for providing a second force to the wafer. The plasma processing system may also include a first trans-impedance amplifier (TIA) and a second TIA configured to measure a first set of voltages for calculating a value of a positive load current applied to the positive terminal. The plasma processing system may also include a third TIA and a fourth TIA configured to measure a second set of voltages for calculating a value of a negative load current applied to the negative terminal.12-04-2008
20120320491ELECTROSTATIC CHUCK - An electrostatic chuck for manufacturing a flat panel display is disclosed. In one embodiment, the electrostatic chuck includes i) a base substrate, ii) an insulating layer formed on the base substrate and iii) a conductive layer formed on the insulating layer and electrically connected to a power device. The electrostatic chuck further includes iv) a dielectric layer formed on the conductive layer and comprising an emboss part and a trench part, wherein the emboss part comprises at least one protrusion, and wherein the trench part comprises at least one channel and surrounds the emboss part and v) a cooling gas line extending through the base substrate, the insulating layer, the conductive layer, and the dielectric layer.12-20-2012
20120087058Image-Compensating Addressable Electrostatic Chuck System - Systems and methods are provided for utilizing an image-compensating addressable electrostatic chuck to correct for imaging errors of a lithographic system. An image-compensating addressable electrostatic chuck comprises a substrate, a plurality of first electrodes, a plurality of second electrodes, and a support layer. The plurality of first electrodes are disposed on the substrate and spaced evenly in a first direction. The plurality of second electrodes are disposed on the substrate and spaced evenly in a second direction, the second direction being generally orthogonal to the first direction. The support layer is disposed above the pluralities of electrodes to support an object. Positionally overlapping portions of the plurality of first and second electrodes form a matrix of electrostatic force points, such that a non-uniform electrostatic force acts on the object in proximity of a given force point upon energizing a pair of the plurality of first and second electrodes associated with the given force point.04-12-2012
20120287552SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE - A disclosed substrate temperature adjusting-fixing device includes an electro static chuck attracting and holding an attractable object onto a base body having a built-in electrode by applying a voltage to the electrode, a base plate fixing the electro static chuck via an adhesive layer, a power supplying portion electrically connected to the electrode, and a retaining portion holding the power supplying portion, wherein the retaining portion includes a main body and a sealing portion, the main body is fixed to the base plate and has recesses opened on an opposite side of the adhesive layer and a through hole penetrating through the main body, the power supplying portion includes an electrode pin and an electric wire, the electric wire is wired inside the adhesive layer, the through hole and the recesses to electrically connect the electrode with the electrode pin, and the sealing portion fills the recesses.11-15-2012
20110157761ELECTROSTATIC CHUCK - Provided is an electrostatic chuck (06-30-2011
20110157760ELECTROSTATIC CHUCK WITH REDUCED ARCING - Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.06-30-2011
20130021717ELECTROSTATIC CHUCK WITH WAFER BACKSIDE PLASMA ASSISTED DECHUCK - An electrostatic chuck assembly useful in a plasma processing chamber, comprising a support surface on which a semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode which applies an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, at least one outlet in the support surface which delivers a heat transfer gas to an underside of the wafer, at least one gas passage connected to a source of heat transfer gas operable to supply heat transfer gas at a desired pressure to the at least one gas passage, and at least one cavity and plasma generating electrode along the at least one gas passage, the plasma generating electrode operable to form a dechucking plasma in the cavity, the dechucking plasma being effective to neutralize charges on the underside of the wafer and support surface of the electrostatic chuck and thereby reduce a residual sticking force between the wafer and the support surface.01-24-2013
20080232022Method and Device for Electrostatic Fixing of Substrates With Polarizable Molecules - Method for handling a substrate with polarizable molecules including providing a carrier with a first junction electrode and disposing the substrate between the first junction electrode and a second junction electrode. Fixing the substrate on the carrier is achieved by applying a voltage between the first junction electrode and the second junction electrode, so that the polarizable molecules are polarized. After removing the second junction electrode, the substrate remains fixed on the carrier.09-25-2008
20100085679METHOD FOR USING AN RC CIRCUIT TO MODEL TRAPPED CHARGE IN AN ELECTROSTATIC CHUCK - A method for simulating the effect of trapped charge in an electrostatic chuck on the chuck performance comprises creating a trapped-charge electrical model having a trapped-charge capacitor and a gap-trapped resistor, and coupling the model to a plurality of voltage sources. The trapped-charge capacitor and the gap-trapped resistor may be varied in relation to a plurality of electrostatic chuck physical parameters.04-08-2010
20120250212METHOD FOR PRODUCING ELECTROSTATIC CHUCK AND ELECTROSTATIC CHUCK - A method for producing an electrostatic chuck 10-04-2012
20120250214SUBSTRATE REMOVING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes an electrostatic chuck enclosing an electrostatic electrode plate and a chamber having a ground potential and housing the electrostatic chuck. When the absolute value of the potential generated at a wafer after DC discharge is generated between the wafer and the chamber is 0.5 kV, the potential of the electrostatic electrode plate is changed from 2.5 kV to 1.5 kV to generate DC discharge so that the absolute value of the potential of a placing surface of the wafer of the electrostatic chuck becomes 0.5 kV after the plasma etching process, the polarities of the potential of the placing surface after the change and the wafer become the same, and the absolute value of the potential difference between the wafer and the chamber becomes 0.5 kV or more. The wafer is then removed from the electrostatic chuck.10-04-2012
20130100573APPARATUS AND METHOD FOR HOLDING A WAFER - An apparatus and a method for holding a wafer are provided in this disclosure. The wafer holding apparatus includes: an electrostatic chuck which has a plurality of zones arranged in a matrix; a plurality of power supply units, each of which is adapted to apply a voltage to the plurality of zones of the electrostatic chuck independently; and a control unit which is adapted to control each of the power supply units independently to start or stop applying the voltage to a corresponding zone of the electrostatic chuck. Surface flatness is improved when the wafer is chucked on the wafer holding apparatus according to the disclosure, and the risk of particles contamination can be reduced when the wafer is flattened and gets back into warpage from flatness.04-25-2013
20130100572APPARATUS AND METHOD FOR HOLDING A WAFER - An apparatus and a method for holding a wafer are provided in this disclosure. The wafer holding apparatus includes: an electrostatic chuck, the electrostatic chuck having a plurality of concentric zones; a plurality of power supply units, each adapted for applying a voltage to one of the zones of the electrostatic chuck independently; and a control unit, adapted for controlling each of the power supply units independently to start or stop applying the voltage to a corresponding zone of the electrostatic chuck. Surface flatness is improved when the wafer is chucked on the wafer holding apparatus according to the disclosure, and the risk of particle contamination can be reduced when the wafer is flattened and gets back into warpage from flatness.04-25-2013
20130114181Substrate Clamping System and Method for Operating the Same - An electrostatic chuck includes an electrically conductive baseplate and an electrically non-conductive substrate support member disposed on the baseplate. First and second sets of clamp electrodes are disposed within the support member. A power supply system includes a clamp power supply, a center tap power supply, and a baseplate power supply. The clamp power supply generates a positive output voltage and a negative output voltage, each of which is equidistant from a center tap voltage. The positive output voltage is electrically connected to the first set of clamp electrodes. The negative output voltage is electrically connected to the second set of clamp electrodes. The center tap power supply is defined to control the center tap voltage of the clamp power supply. The baseplate power supply is defined to generate a baseplate output voltage independent from the center tap voltage. The baseplate output voltage is electrically connected to the baseplate.05-09-2013
20130120897Electrostatic Chuck with Photo-Patternable Soft Protrusion Contact Surface - In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer.05-16-2013
20130128409Peripheral RF Feed and Symmetric RF Return for Symmetric RF Delivery - Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.05-23-2013
20130141833MOBILE ELECTROSTATIC CARRIERS FOR THIN WAFER PROCESSING - In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.06-06-2013
20110228439SUBSTRATE MOUNTING AND DEMOUNTING METHOD - A substrate mounting and demounting method that can prevent fine particles from getting stuck in a rear surface of a substrate. A substrate processing apparatus that implements the substrate mounting and demounting method has an electrostatic chuck that has therein an electrode plate to which a DC voltage is applied, and attracts and holds a substrate through an electrostatic force generated due to the applied DC voltage, and a heat-transmitting gas supply unit that supplies a heat-transmitting gas into a gap between the attracted and held substrate and the electrostatic chuck. When the DC voltage applied to the electrode plate is increased while being gradually changed, the pressure of the supplied heat-transmitting gas is increased in stages in response to the increase in the DC voltage.09-22-2011
20130148253SUBSTRATE TEMPERATURE ADJUSTING-FIXING DEVICE AND MANUFACTURING METHOD THEREOF - A substrate temperature adjusting-fixing device includes an electro static chuck attracting and holding an object to be attracted; a base plate to which the electro static chuck is fixed; an adhesive layer formed between the electro static chuck and the base plate; and a heat insulation layer formed between the electro static chuck and the base plate, wherein the electro static chuck includes a base body having a mounting surface on which the object to be attracted is mounted, a heat generator directly formed on a surface opposite to the mounting surface of the base body, and an insulating layer formed to cover the heat generator.06-13-2013
20130135784Electrostatic Chuck Robotic System - A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.05-30-2013
20100309604Method and Apparatus for Chuck Thermal Calibration - Wafer temperature is measured as a function of time following removal of a heat source to which the wafer is exposed. During the wafer temperature measurements, a gas is supplied at a substantially constant pressure at an interface between the wafer and a chuck upon which the wafer is supported. A chuck thermal characterization parameter value corresponding to the applied gas pressure is determined from the measured wafer temperature as a function of time. Wafer temperatures are measured for a number of applied gas pressures to generate a set of chuck thermal characterization parameter values as a function of gas pressure. A thermal calibration curve for the chuck is generated from the set of measured chuck thermal characterization parameter values and the corresponding gas pressures. The thermal calibration curve for the chuck can be used to tune the gas pressure to obtain a particular wafer temperature during a fabrication process.12-09-2010
20120281334ELECTROSTATIC CHUCK APPARATUS - Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.11-08-2012
20120281333TEMPERATURE-CONTROLLABLE ELECTROSTATIC CHUCK - The invention is directed to a temperature-controllable electrostatic chuck having a heat-transfer body, one or more electrodes and one or more thermopile devices. The heat-transfer body transfers heat between the interior of the electrostatic chuck and the exterior of the electrostatic chuck via a heat-transfer assembly with heat-transfer fluid circulated to and from an external chiller. The one or more thermopile devices are in series between the heat-transfer body and a top surface of the electrostatic chuck, so that heat may be further transferred between a workpiece held on the top surface and the heat-transfer body. Accordingly, because the workpiece temperature may be adjusted by both the external chiller and the thermopile devices, the workpiece temperature may be further lowered when the cold sides of the thermopile device face the workpiece. Otherwise, the workpiece temperature may be further elevated when the hot sides of the thermopile device face the workpiece.11-08-2012
20130155569High Conductivity Electrostatic Chuck - In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 1006-20-2013
20130155568EXTENDED AND INDEPENDENT RF POWERED CATHODE SUBSTRATE FOR EXTREME EDGE TUNABILITY - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.06-20-2013
20110310525SYSTEM FOR SECURELY DECHUCKING WAFERS - A system for chucking and de-chucking a work piece comprises a wafer stage having a chuck support for supporting a chuck. The wafer stage further comprises a chuck mounted on the chuck support for receiving and attaching the work piece thereto; a support lift means for supporting the work piece; a driving means coupled to the support lift means for gradually raising the support lift means to contact the work piece in response to a variable quantity; a controller for receiving the variable quantity; and a regulating means coupled to the driving means and to the controller, the regulating means for controlling the variable quantity going to the driving means when a predetermined variable quantity is detected.12-22-2011
20110310524WAFER CHUCK FOR EUV LITHOGRAPHY - A wafer chuck (12-22-2011
20120002345SUBSTRATE SUPPORT TABLE OF PLASMA PROCESSING DEVICE - A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate (01-05-2012
20100046134Electrostatic chuck device - An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.02-25-2010
20130201598ELECTROSTATIC CHUCK AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK - An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and a method for manufacturing the electrostatic chuck is provided.08-08-2013
20130201597ELECTROSTATIC CHUCK - An electrostatic chuck comprises: a dielectric substrate having a protrusion and a planar surface part. The protrusion is formed on a major surface of the dielectric substrate. An adsorption target material is mounted on the major surface. The planar surface part is formed in a periphery of the protrusion. The dielectric substrate is formed from a polycrystalline ceramics sintered body. A top face of the protrusion is a curved surface, and a first recess is formed in the top face to correspond to crystal grains that appear on the surface. The planar surface part has a flat part, and a second recess is formed in the flat part. A depth dimension of the first recess is greater than a depth dimension of the second recess. The electrostatic chuck can suppress the generation of particles and can easily recover a clean state of the electrostatic chuck surface.08-08-2013
20130201596Electrostatic Chuck with Multi-Zone Control - An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.08-08-2013

Patent applications in class Pinning