Entries |
Document | Title | Date |
20080218713 | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method - A drive unit drives a wafer stage in a Y-axis direction based on a measurement value of an encoder that measures position information of the wafer stage in the Y-axis direction and based on information on the flatness of a scale that is measured by the encoder. In this case, the drive unit can drive the wafer stage in a predetermined direction based on a measurement value after correction in which a measurement error caused by the flatness of the scale included in the measurement value of the encoder is corrected based on the information on the flatness of the scale. Accordingly, the wafer stage can be driven with high accuracy in a predetermined direction using the encoder, without being affected by the unevenness of the scale. | 09-11-2008 |
20080225252 | Device manufacturing method, lithographic apparatus, and a computer program - A device manufacturing method includes exposing a substrate with a patterned beam of radiation formed by a reticle mounted on a displaceable reticle stage, determining a non-linear function for approximating a height and a tilt profile of a surface of the reticle with respect to the reticle stage, and controlling a displacement of the reticle stage during exposure of the substrate in accordance with the non-linear function. | 09-18-2008 |
20080246933 | Exposure Method And Apparatus, And Device Production Method - Disclosed is an exposure method which illuminates a first object with an exposure beam and exposes a second object with the exposure beam through the first object and a projection optical system, wherein at least a part of one of the first object and the projection optical system is irradiated with a light beam having a wavelength range different from that of the exposure beam through a space waveguide mechanism, to correct an imaging characteristic of the projection optical system. | 10-09-2008 |
20080259297 | Exposure Method and Lithography System - In the case where the previous process (X) and the previous process (Y) are different in step | 10-23-2008 |
20080273184 | APPARATUS AND METHOD FOR REFERENTIAL POSITION MEASUREMENT AND PATTERN-FORMING APPARATUS - A digital exposure apparatus for forming a pattern on a topside surface of a substrate has an alignment unit, which detects a position of the substrate from image data obtained through a camera from a reference mark provided on the topside surface of the substrate. The alignment unit further has a Z-direction sensor to measure a fluctuation amount Δ of the topside surface of the substrate from a predetermined focal plane of the camera. Depending upon the measured amount Δ, a set of distortion correction data is selected from or calculated on the basis of previously stored distortion correction data. The image data of the reference mark is corrected with the selected or calculated distortion correction data, so that errors induced by the fluctuation from the focal plane are corrected without adjusting the position of the substrate in the direction of an optical axis of the camera of the alignment unit. | 11-06-2008 |
20080278699 | Method For Distortion Correction In A Microlithographic Projection Exposure Apparatus - For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens. | 11-13-2008 |
20080291411 | DEVICES AND METHODS FOR REDUCING RESIDUAL RETICLE CHUCKING FORCES - Devices and methods are disclosed for holding an object, particularly a planar object. An exemplary device has a chuck and pressure-changing device. The chuck has an object-mounting surface and a deformable membrane coupled to the object-mounting surface such that conformational changes in the membrane produce corresponding changes in the object-mounting surface. The chuck has a first cavity separated by the membrane from the chuck cavity. The pressure-changing device is coupled to the first cavity to change pressure in the first cavity, relative to outside it, sufficiently to produce a conformational change of the membrane and a corresponding change in the object-mounting surface sufficient to reduce the force with which the object is being held to the object-mounting surface. The pressure change can be a pressure increase or decrease. The change in the object-mounting surface can be, for example, a reduction in area of contact of the object-mounting surface with the object, thereby reducing the holding force. | 11-27-2008 |
20080291412 | Lithographic apparatus and method - A lithographic method is provided that includes using an illumination system to provide a beam of radiation having an illumination mode, using a patterning device to impart the radiation beam with a pattern in its cross-section, and projecting the patterned radiation beam onto a substrate. The illumination mode is adjusted after the radiation beam has been projected onto the substrate. The adjustment is arranged to reduce the effect of optical aberrations due to lens heating on the projected pattern during projection of the pattern onto a subsequent substrate. | 11-27-2008 |
20080297747 | Lithographic Apparatus and Device Manufacturing Method - One or more patterning arrays are mounted to a mounting plate via height adjustment structures that enable the flatness of the active surfaces of the patterning arrays to be controlled. The height adjustment structures may comprise an array of piezoelectric actuators or screws. Alternatively, the backside of the patterning means may be polished to optical flatness and bonded by crystal bonding to an optically flat surface of a rigid mounting body. | 12-04-2008 |
20080309898 | Lithographic Apparatus and Device Manufacturing Method Using Pupil Filling By Telecentricity Control - A method of measuring aberration present in a lithographic apparatus comprising the following steps. Modulating a radiation beam using a reflective patterning device. Projecting the radiation beam using a projection system. Detecting the projected radiation using a sensor. Measuring aberration via interference in the detected radiation beam. The radiation beam is tilted away from the optical axis of the projection system prior to entering the projection system. | 12-18-2008 |
20080309899 | Lithographic Apparatus and Method - Systems and methods are provided for measuring aberration in a lithographic apparatus. A radiation beam is modulated using an array of individually controllable elements, and the modulated beam is projected using a projection system. A pattern is provided on the array of individually controllable elements to modulate the radiation beam, and the pattern comprises a repeating structure that is formed from a plurality of features that are dimensioned such that first order diffraction of the radiation beam substantially fills the pupil of the projection system. A sensor detects the projected radiation and measures interference in the radiation projected by the projection system. Aberration in the detected radiation beam is then measured. | 12-18-2008 |
20080316442 | FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY - A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables. | 12-25-2008 |
20080316443 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus includes a first driving mechanism which drives a first optical element, a second driving mechanism which drives a second optical element, and a control unit which controls the first driving mechanism and the second driving mechanism so as to adjust the astigmatism of a projection optical system. The amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the first optical element by the first driving mechanism have a first ratio, and the amount of change in the first order component of the astigmatism and the amount of change in the second order component of the astigmatism upon driving the second optical element by the second driving mechanism have a second ratio which is different from the first ratio. | 12-25-2008 |
20080316444 | METHOD AND DEVICE FOR THE CORRECTION OF IMAGING DEFECTS - The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components. | 12-25-2008 |
20090002657 | Exposure Apparatus Capable of Asymmetrically Adjusting Light Intensity - An exposure apparatus of a semiconductor device may include an exposure light source; an asymmetric adjustment filter for asymmetrically adjusting intensity of a light which passes through the exposure light source; a photomask for passing the light of which intensity is adjusted by the asymmetric adjustment filter; a projection lens for projecting the light passing through the photomask; and a wafer stage for mounting a wafer on which an image is formed by the light from the projection lens. | 01-01-2009 |
20090033893 | Methods and Systems to Compensate for a Stitching Disturbance of a Printed Pattern in a Maskless Lithography System Not Utilizing Overlap of the Exposure Zones - A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass. | 02-05-2009 |
20090033894 | Method for determining the systematic error in the measurement of positions of edges of structures on a substrate resulting from the substrate topology - A method for determining the lateral correction as a function of the substrate topology and/or the geometry of the substrate holder is disclosed. The substrate is placed on a measuring stage traversable in the X coordinate direction and Y coordinate direction, which carries the substrate to be measured. The substrate is supported on at least three support points which define a plane. An apparatus is provided for determining the position of a plurality of positions on the surface of the substrate in the in the X, Y and Z coordinate directions. The substrate is tiltable about an axis parallel to the X/Y plane, to enable the substrate to be measured in a tilted position. | 02-05-2009 |
20090040483 | MULTIPLE EXPOSURE TECHNIQUE USING OPC TO CORRECT DISTORTION - Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask. | 02-12-2009 |
20090040484 | EXPOSURE EQUIPMENT, EXPOSURE METHOD, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE - Provided is an exposure equipment having high resolution even when a reticle is inclined. The exposure equipment includes: an optical system for projecting on a wafer ( | 02-12-2009 |
20090046262 | EXPOSURE APPARATUS AND EXPOSURE METHOD - An exposure apparatus includes a light source for emitting exposure light, a spatial light modulation means for performing spatial light modulation, based on an image signal, on the exposure light, an imaging means for forming an image on a photosensitive material with the exposure light on which spatial light modulation has been performed, and a focus adjustment means for adjusting focus by changing the optical path length of the modulated exposure light when an image is formed on the photosensitive material with the spatially modulated exposure light. The imaging means forms an image with the spatially modulated exposure light only by a substantially rectangular region of the imaging means including the central portion of the imaging means. | 02-19-2009 |
20090091720 | Force Actuator - Actuator arrangement, serving in particular to effect a deformation of an optical element, with a first, specifically fluidic-based actuator device ( | 04-09-2009 |
20090097001 | Non-Telecentric Lithography Apparatus and Method of Manufacturing Integrated Circuits - A lithography apparatus includes a condenser system and a projection system. The condenser system is configured to irradiate a mask with non-telecentric incident radiation. The projection system is configured to collect and focus a radiation diffracted at an absorber pattern on the mask to a sample. The projection system is further configured to compensate, in the diffracted radiation, a phase and/or intensity variation resulting from the diffraction of the non-telecentric incident radiation, wherein the diffraction results from an absorber pattern provided on the mask. | 04-16-2009 |
20090103065 | EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - The present invention provides an exposure apparatus comprising a projection optical system including an optical element of which at least one of a position, orientation, and shape can be regulated, a regulator configured to regulate the at least one of the position, orientation, and shape of the optical element, and a controller configured to calculate, using quadratic programming, a regulation amount of the optical element that minimizes a value of an objective function expressed by a first dummy variable serving as an upper limit of a linear optical characteristic value of the projection optical system, and a second dummy variable serving as an upper limit of a quadratic optical characteristic value of the projection optical system, and to control the regulator based on the calculated regulation amount. | 04-23-2009 |
20090109415 | LITHOGRAPHIC APPARATUS AND METHOD - A lithographic apparatus includes an illumination system configured to condition a beam of radiation, a support structure configured to hold a reticle, a substrate table configured to hold a substrate, and a projection system configured to project a beam onto the substrate table. The numerical aperture of the illumination system is larger than the numerical aperture of the projection system. The apparatus also includes a radiation redirection device configured to re-direct σ>1 components of the beam of radiation to within the numerical aperture of the projection system. | 04-30-2009 |
20090115981 | DRAWING POINT DATA OBTAINMENT METHOD AND APPARATUS AND DRAWING METHOD AND APPARATUS - A drawing point data obtainment method is a method for obtaining drawing point data that is used when an image is drawn on a drawing object by relatively moving a drawing point formation area, in which a drawing point is formed based on the drawing point data, with respect to the drawing object and by sequentially forming, based on the movement of the drawing point formation area, the drawing points on the drawing object. In the drawing point data obtainment method, information about a drawing point data track of the drawing point formation area in original image data of the image is obtained and a plurality of drawing point data sets corresponding to the drawing point data track is obtained, based on the obtained information about the drawing point data track, from the image data. | 05-07-2009 |
20090153816 | Method of Transferring a Substrate, Transfer System and Lithographic Projection Apparatus - The invention relates to a method of transferring a substrate from a first substrate holder to a second substrate holder in a lithographic projection apparatus by means of a transfer unit on the basis of transfer data available thereto. The second substrate holder has a surface provided with a first plurality of burls. In the method, a memory encoded with burl position data and substrate position data is provided. Subsequently, a substrate is provided on the first substrate holder. The position error and orientation of the substrate is then measured. On the basis of the burl position data, substrate position data and orientation as measured orientation adjustment data are calculated. The orientation of the substrate is subsequently adjusted in accordance with the orientation adjustment data. The substrate is then transferred from the first substrate holder to the second substrate holder by the transfer unit and placed on the second substrate holder. | 06-18-2009 |
20090190108 | METHOD AND SYSTEM FOR LEVELING TOPOGRAPHY OF SEMICONDUCTOR CHIP SURFACE - A system and method of leveling the topography of a semiconductor wafer surface is presented. The system may induce low-order lens aberration to control the focal plane dynamically. The system may include a leveling sensor which measures the changes in topography on the surface, as well as an analyzer to determine the aberration to be induced. In addition, the system may include a controller that dynamically adjusts at least one lens to induce such aberration. In another arrangement, the system may control the focal plane by dividing the exposure slit into smaller slits. In this arrangement, the analyzer may be used to determine the appropriate number of divisions to make to produce a focal plane that closely matches the surface of the wafer. In addition, the controller may adjust the stage height and tilt for each division to produce such a focal plane. | 07-30-2009 |
20090201473 | Method for Determining Exposure Settings, Lithographic Exposure Apparatus, Computer Program and Data Carrier - Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction. | 08-13-2009 |
20090284719 | ALIGNMENT METHOD AND APPARATUS OF MASK PATTERN - An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern. | 11-19-2009 |
20090284720 | Lithographic Apparatus and Device Manufacturing Method - A lithography apparatus includes a projection system configured to project a radiation beam onto a substrate, a detector configured to inspect the substrate, and a substrate table configured to support the substrate and move the substrate relative to the projection system and the detector. The detector is arranged to inspect a portion of the substrate while the substrate is moved and before the portion is exposed to the radiation beam. | 11-19-2009 |
20090296057 | AUTOMATED DETERMINATION OF HEIGHT AND TILT OF A SUBSTRATE SURFACE WITHIN A LITHOGRAPHY SYSTEM - Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted. | 12-03-2009 |
20090310106 | EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An exposure apparatus which transfers a pattern of a reticle onto a substrate via a projection optical system comprises a controller configured to correct an image of the pattern, formed on the substrate, in accordance with a shape of the reticle in a standby state until an exposure operation starts. | 12-17-2009 |
20090316123 | INJECTION-LOCKED LASER, INTERFEROMETER, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - An injection-locked laser is disclosed. The injection-locked laser comprises a seed laser, an oscillator into which a certain component of light output from the seed laser is injected as seed laser light, a frequency converter which shifts a frequency of the remaining component of the light output from the seed laser, a photodetector which detects light obtained by synthesizing the light output from the oscillator and the light output from the frequency converter, and a controller which controls an optical path length of the oscillator based on a beat signal component contained in the signal output from the photodetector. | 12-24-2009 |
20100002209 | EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An exposure apparatus comprises an optical system configured to illuminate a reticle, including an imaging optical system having an optical element, a reflecting surface which reflects light toward the optical element, and a processor which extracts information from a first signal based on first light which is incident on the imaging optical system and reflected by the reflecting surface and a surface of the optical element, and information from a second signal based on second light which is incident on the imaging optical system, and which obtains information indicating a surface condition of the optical element using the information extracted from the first and second signals. | 01-07-2010 |
20100033696 | METHOD AND APPARATUS FOR PRODUCING AN ELEMENT HAVING AT LEAST ONE FREEFORM SURFACE HAVING A HIGH ACCURACY OF FORM AND A LOW SURFACE ROUGHNESS - A method for producing an element having at least one arbitrarily freely formed surface (freeform surface) having a high accuracy of form and a low surface roughness. The freeform surface is obtained by at least one first processing step with a shaping material processing method in which at least an approximation to the desired freeform surface (target form) is effected, and at least one second step with a material processing method that smooths the surface, wherein at least during the second processing step of the smoothing material processing, the element ( | 02-11-2010 |
20100123884 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An apparatus comprises a controller configured to generate a first list of measurement points arranged symmetrically with respect to a center of a shot region along a direction of scanning at a predetermined pitch, and a control by the controller includes a first control which causes a measurement device to measure a position of a surface with respect to each measurement point included in the first list, and a second control which causes the measurement device to measure the position with respect to each measurement point included in a second list obtained by excluding, from the first list, at least one of a measurement point with respect to which measurement is performed last in a first shot region and a measurement point with respect to which measurement is performed first in a second shot region next to the first shot region. | 05-20-2010 |
20100141913 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light. | 06-10-2010 |
20100182577 | PROJECTION OPTICAL SYSTEM, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - A projection optical system of the present invention includes an optical element group that includes optical elements, and a controller that drives at least one of the first optical elements. The optical element group includes aspheric surfaces having a complementary relationship with each other and are arranged so that the aspheric surfaces face each other. The controller changes a relative position between the optical elements in a first direction and a second direction orthogonal to the first direction to control optical performances of the projection optical system corresponding to each of the first direction and the second direction. | 07-22-2010 |
20100195069 | EXPOSURE METHOD AND EXPOSURE SYSTEM - An exposure method has acquiring first OPE (Optical Proximity Effect) error corresponding to a first and second transcriptional pattern portions formed by transcribing a first and second pattern portions of a mask pattern onto a substrate with an exposure apparatus, computing a first correction amount of an exposure condition, the first correction amount reducing the first OPE error, computing a best focus difference between the first transcriptional pattern portion and the second transcriptional pattern portion transcribed with the exposure apparatus to which the first correction amount is imparted, computing a second correction amount of a projection optical system of the exposure apparatus, the second correction amount reducing the best focus difference, acquiring second OPE error corresponding to the first and second transcriptional pattern portions transcribed with the exposure apparatus to which the first and second correction amounts are imparted, and performing exposure processing with the exposure apparatus using a mask comprising the mask pattern, the first correction amount and the second correction amount being imparted to the exposure apparatus, when the second OPE error is included in a predetermined range. | 08-05-2010 |
20100195070 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, PROJECTION EXPOSURE APPARATUS, PROJECTION EXPOSURE METHOD AND OPTICAL CORRECTION PLATE - A projection objective is disclosed. The projection objective can include a plurality of optical elements arranged to image a pattern from an object field in an object surface of the projection objective to an image field in an image surface of the projection objective with electromagnetic operating radiation from a wavelength band around an operating wavelength λ. The plurality of optical elements can include an optical correction plate that includes a body comprising a material transparent to the operating radiation, the body having a first optical surface, a second optical surface, a plate normal substantially perpendicular to the first and second optical surfaces, and a thickness profile defined as a distance between the first and second optical surfaces measured parallel to the plate normal. The first optical surface can have a non-rotationally symmetric aspheric first surface profile with a first peak-to-valley value PV | 08-05-2010 |
20100201960 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - In a method for improving imaging properties of an illumination system or a projection objective of a microlithographic projection exposure apparatus, which comprises an optical element having a surface, the shape of the surface is measured directly at various points. To this end, a measuring beam is directed on the points, and the reflected or refracted beam is measured, e.g. using an interferometer. Based on deviations of the measured shape from a target shape, corrective measures are derived so that the imaging errors of the optical system are improved. The corrective measures may comprise a change in the position or the shape of the optical element being analyzed, or another optical element of the optical system. The target shape of the surface may, for example, be determined so that the optical element at least partially corrects imaging errors caused by other optical elements. | 08-12-2010 |
20100265478 | PROJECTION LENS SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE INSTALLATION - A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation. | 10-21-2010 |
20100290016 | MICRODEVICE FABRICATION - According to certain embodiments, systems comprising an energy source; at least one conjugate mask; a magnification device; and a fabrication material; wherein the at least one conjugate mask is disposed between the energy source and the magnification device; and wherein the fabrication material is disposed operable to the magnification device. According to other embodiments, methods and composition employing such systems. | 11-18-2010 |
20110043775 | LITHOGRAPHIC APPARATUS, DISTORTION DETERMINING METHOD, AND PATTERNING DEVICE - The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein said apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, said apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein said patterning device has a main imaging field, and a perimeter and said apparatus is operable to model said higher-order distortions using signals resultant from alignment structures comprised in said perimeter and/or in the imaging field. | 02-24-2011 |
20110122382 | METHOD FOR MODIFYING A POLARIZATION DISTRIBUTION IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure relates to a method for modifying a polarization distribution in a microlithographic projection exposure apparatus, and to a microlithographic projection exposure apparatus. The projection exposure apparatus has an illumination device and a projection objective. The illumination device has an optical axis and a correction arrangement having a lambda/4 plate arranged rotatably about the optical axis and/or a lambda/2 plate arranged rotatably about the optical axis. The method includes determining a polarization distribution in a predetermined plane of the projection exposure apparatus, and rotating the lambda/4 plate and/or the lambda/2 plate about the optical axis so that a local variation of the polarization distribution is reduced after rotation in comparison with the state before the rotating. | 05-26-2011 |
20110128518 | REFLECTIVE RETICLE CHUCK, REFLECTIVE ILLUMINATION SYSTEM INCLUDING THE SAME, METHOD OF CONTROLLING FLATNESS OF REFLECTIVE RETICLE USING THE CHUCK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE CHUCK - Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion. | 06-02-2011 |
20110205509 | TEST METHOD FOR DETERMINING RETICLE TRANSMISSION STABILITY - Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold. | 08-25-2011 |
20110216293 | Lithographic Apparatus and Device Manufacturing Method - A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer. | 09-08-2011 |
20110228242 | Method and apparatus for performing alignment using reference board - An alignment method for the of patterning a work piece in a direct write machine, wherein a reference board provided with board reference features is used to coordinate calibration of a measurement station and a writing station against a common reference. An adjusted pattern is for writing on the work piece is calculated relative to the position of the reference board. | 09-22-2011 |
20110292361 | Exposure apparatus - An exposure apparatus including a warp deformation forming mechanism having a plane-parallel plate for warp deformation provided on a projection optical path of a mask pattern to be projected to a work substrate, and configured to be deformed by warping, a restraint member configured to cause an intermediate part of the plane-parallel plate between neighboring two of corner parts to serve as a fulcrum, each corner part formed by two intersecting sides of the plane-parallel plate, and a pressure member configured to warp and deform the plane-parallel plate with the restraint member used as a fulcrum by applying a pressurizing force to the corner parts of the plane-parallel plate in an optical axis direction of the projection optical path. | 12-01-2011 |
20110292362 | Exposure apparatus - An exposure apparatus which forms a predetermined mask pattern on a target workpiece through exposure by: casting exposure light upon a mask in which the pattern and a mask-side alignment mark are formed, and forming an image of the mask on the target workpiece by projecting the exposure light, which passes the mask, on the target workpiece through a projection lens, includes: an alignment lighting unit configured to cast, as alignment light, light in a wavelength range included in the exposure light onto the mask-side alignment mark of the mask; and an alignment camera unit including an image pickup device for capturing images, and configured to receive the incident alignment light coming from the alignment lighting unit through the mask and the projection lens. | 12-01-2011 |
20120062862 | Apparatuses And Methods For Compensation Of Carrier Distortions From Measurement Machines - In a method for generating a pattern on a workpiece having at least one die placed thereon, positions of the at least one die and at least two global alignment marks on the workpiece are measured, pattern adjustment data is generated, pattern image data associated with the pattern to be written is adjusted based on the generated pattern adjustment data, and the pattern is generated on the workpiece based on the modified pattern adjustment data. | 03-15-2012 |
20120099089 | APPARATUS AND METHODS FOR MEASURING THERMALLY INDUCED RETICLE DISTORTION - An apparatus and method for measuring thermo-mechanically induced reticle distortion or other distortion in a lithography device enables detecting distortion at the nanometer level in situ. The techniques described use relatively simple optical detectors and data acquisition electronics that are capable of monitoring the distortion in real time, during operation of the lithography equipment. Time-varying anisotropic distortion of a reticle can be measured by directing slit patterns of light having different orientations to the reticle and detecting reflected, transmitted or diffracted light from the reticle. In one example, corresponding segments of successive time measurements of secondary light signals are compared as the reticle scans a substrate at a reticle stage speed of about 1 m/s to detect temporal offsets and other features that correspond to spatial distortion. | 04-26-2012 |
20120120379 | SYSTEM AND METHOD FOR CONTROLLING THE DISTORTION OF A RETICLE - An apparatus for controlling the distortion of a reticle ( | 05-17-2012 |
20120154773 | METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK - A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site. | 06-21-2012 |
20120224156 | METHOD OF CORRECTING FLARE AND METHOD OF PREPARING EXTREME ULTRA VIOLET MASK - A method of correcting flare includes measuring flare of a test pattern, calculating point spread functions (PSFs) of the flare as a function of distance, and correcting the flare using corresponding PSFs for an influence range of the flare. The influence range is divided into a first range less than a predetermined distance and a second range equal to or greater than the predetermined distance, and corresponding PSFs are separately applied to the first and second ranges to correct the flare. | 09-06-2012 |
20120224157 | MOVABLE BODY DRIVE METHOD AND SYSTEM, PATTERN FORMATION METHOD AND APPARATUS, EXPOSURE METHOD AND APPARATUS FOR DRIVING MOVABLE BODY BASED ON MEASUREMENT VALUE OF ENCODER AND INFORMATION ON FLATNESS OF SCALE, AND DEVICE MANUFACTURING METHOD - A drive unit drives a wafer stage in a Y-axis direction based on a measurement value of an encoder that measures position information of the wafer stage in the Y-axis direction and based on information on the flatness of a scale that is measured by the encoder. In this case, the drive unit can drive the wafer stage in a predetermined direction based on a measurement value after correction in which a measurement error caused by the flatness of the scale included in the measurement value of the encoder is corrected based on the information on the flatness of the scale. Accordingly, the wafer stage can be driven with high accuracy in a predetermined direction using the encoder, without being affected by the unevenness of the scale. | 09-06-2012 |
20120257182 | LITHOGRAPHIC METHOD AND ASSEMBLY - A lithographic method of determining a sensitivity of a property of a pattern feature to change in optical aberrations of a lithographic apparatus used to provide that pattern feature. The method includes controlling a configuration of the lithographic apparatus to establish a first aberration state, forming a first image of the pattern feature with that lithographic apparatus when the lithographic apparatus is in that first aberration state, measuring a property of the image, controlling a configuration of the lithographic apparatus to establish a second, different, aberration state, forming an image of the same pattern feature with that lithographic apparatus when the lithographic apparatus is in that second aberration state, measuring a same property of the image, and using the measurements to determine the sensitivity of the property of the pattern feature to changes in the aberration state. | 10-11-2012 |
20120262685 | Double EUV Illumination Uniformity Correction System and Method - A lithographic apparatus includes a uniformity correction system located at a plane and configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers that move into and out of intersection with a beam so as to correct an intensity of respective portions of the radiation beam. According to another embodiment, a method includes for: focusing a beam of radiation at a first plane to form pupil; adjusting the intensity of the beam near the first plane by moving fingers located near the first plane into and out of a path of the beam of radiation, wherein a width of a tip of each of the fingers is larger than that of corresponding actuating devices used to move each corresponding one of the fingers; patterning the beam; and projecting the patterned beam onto a substrate. | 10-18-2012 |
20120281191 | METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes. | 11-08-2012 |
20120307218 | METHOD OF CORRECTING DEFECTS IN A REFLECTION-TYPE MASK AND MASK-DEFECT CORRECTION APPARATUS - According to one embodiment, a method of correcting defects in a reflection-type mask is provided, which comprises acquiring a mask-pattern image of the mask, by using a mask-defect correction apparatus includes a mechanism configured to detect a defect in the mask and a mechanism configured to correct the defect, acquiring a simulated wafer-transfer optical image for the mask, by using an AIMS configured to simulate a wafer-transfer optical image, thereby to determine whether the mask is defective, locating a mask defect, in a mask-pattern image acquired by the mask-defect correction apparatus, by referring to the simulated pattern image acquired by the AIMS, and correcting the defect by the mask-defect correction apparatus, on the basis of the position of the mask defect, thus detected. | 12-06-2012 |
20120327382 | PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY - A projection objective for imaging a pattern arranged in an object surface of the projection objective into an image surface of the projection objective with a demagnified imaging scale has a plurality of optical elements which are arranged along an optical axis of the projection objective and are configured so that a defined image field curvature of the projection objective is set such that an object surface that is curved convexly with respect to the projection objective is imaged into a planar image surface. Such projection objective, with a suitable setting of the object surface curvature, avoids the disturbing effect on the image quality that would otherwise result from gravitation-dictated bending of a mask. | 12-27-2012 |
20130044300 | Double-Sided Maskless Exposure System and Method - A double-sided maskless exposure system and method consists of light sources which includes two light wavelength segments, maskless optical engines in which a 2D spatial light modulation(spatial light modulator) device, such as DMD, is generating a plurality of pixel array of the pattern, vision system, moving substrate and computer control system. The double-sided maskless exposure system at least includes two maskless optical engines with auto-calibration function which can correct any alignment error in-line. Each optical engine is for each side of the substrate. The optical engines are aligned each other in pairs and are simultaneously patterning on each side of the moving substrate. The system also includes a manipulator for moving, stepping or scanning the optical engines, relative to the substrate so that it can create a contiguous whole image on the both sides of the subject. | 02-21-2013 |
20130188160 | Optical System of a Microlithographic Projection Exposure Apparatus and Method of Reducing Image Placement Errors - A method of reducing image placement errors in a microlithographic projection exposure apparatus includes providing a mask, a light sensitive layer and a microlithographic projection exposure apparatus which images features of the mask onto the light sensitive surface using projection light. Subsequently, image placement errors associated with an image of the features formed on the light sensitive surface are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced. | 07-25-2013 |
20130201461 | METHOD AND APPARATUS TO CHARACTERIZE PHOTOLITHOGRAPHY LENS QUALITY - Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient. | 08-08-2013 |
20130201462 | METHOD OF DETERMINING OVERLAY ERROR AND CONTROL SYSTEM FOR DYNAMIC CONTROL OF RETICLE POSITION - A method of determining overlay error. The method includes transferring a pattern from a reticle to a wafer and selecting a first set of data points to measure the positional difference between features on the reticle and features on the wafer. The method also includes determining a second set of data points characteristic of the first set of data points but containing fewer data points. A control system for using the second set of data points to dynamically adjust the position of the reticle. | 08-08-2013 |
20130222777 | EXPOSURE APPARATUS, EXPOSURE CONTROL SYSTEM, AND EXPOSURE METHOD - According to one embodiment, there is provided an exposure apparatus including an acquisition unit, and a calculation unit. The acquisition unit obtains a plurality of measured values. The plurality of measured values is measured for a plurality of focus offset quantities different from each other. Each of the plurality of measured values represents positional deviation distribution within a shot area. The calculation unit calculates a plurality of distortion errors from the plurality of measured values and obtains a correlation between the focus offset quantity and alignment compensation value to compensate for the distortion error, in response to the plurality of focus offset quantities and the plurality of distortion errors. | 08-29-2013 |
20130265558 | CONTROL APPARATUS, LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a control apparatus including a feed-forward controller configured to perform feed-forward control of a controlled object, the apparatus being configured to obtain a first response data sequence of the controlled object measured by applying a first manipulated variable to the controlled object, and determining, assuming that a second response data sequence of the controlled object to be obtained if a second manipulated variable data sequence, obtained by respectively multiplying the first manipulated variable by gains as variables which can vary with time, is applied to the controlled object, is expressed as a linear combination of the first response data sequence with the gains as coefficients of the liner combination, the gains so that a discrepancy between the second response data sequence and a target data sequence falls within a tolerance. | 10-10-2013 |
20130286367 | ROLL-TO-ROLL DIGITAL PHOTOLITHOGRAPHY - A system for making flexible circuit films includes an inelastic conveyor, a web handling apparatus configured to pass a flexible substrate around the inelastic conveyor, an image acquisition apparatus configured to measure positions of a first set of alignment marks on the flexible substrate at a first conveyor location, an exposure apparatus configured to patternwise expose a photosensitive material on the flexible substrate at a second conveyor location, and an image processor configured to receive the measured positions of the first set of alignment marks, and to compare the measured positions with reference positions of the first set of alignment marks. The exposure apparatus is configured to patternwise expose the photosensitive material based on the comparison between the measured positions and the reference positions. | 10-31-2013 |
20130335718 | METHOD FOR MEASURING DISTORTION OF PROJECTION OBJECTIVE - A method for measuring distortion of a projection objective, which includes: obtaining a plurality of first positional deviations between two groups of patterns formed respectively after two exposures performed in a same exposure field during a stepping and exposing process of the reticle stage (S | 12-19-2013 |
20140036243 | METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK - The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask. | 02-06-2014 |
20140049760 | LITHOGRAPHIC PRINTING SYSTEM WITH PLACEMENT CORRECTIONS - The technology disclosed relates to methods and devices that compensate for displacements in a pattern or deformations of a workpiece. In particular, this relates to using timing to compensate for displacements along a first axis along the scanning direction while using resampling, interpolation or a similar method to compensate for displacements along a second axis that is substantially orthogonal to the first axis. The scanning direction may be an actual direction of movement of the scanning head or it may be a direction perpendicular to an orientation of an image projected onto a workpiece. | 02-20-2014 |
20140071413 | PATTERN FORMATION METHOD, PATTERN FORMATION APPARATUS, AND RECORDING MEDIUM RECORDED WITH ALIGNMENT PROGRAM - According to one embodiment, a pattern formation method includes placing a master on a substrate including a concave-convex pattern, performing alignment between the master and the substrate, curing a photosensitive resin applied onto the substrate, with the pattern brought into contact with the resin, and removing the master from the resin. The performing alignment includes measuring amount of misalignment of first marks provided at least three of four corners of the shot region and performing alignment of the corners, after the alignment of the corners, measuring misalignment of a second mark, calculating a target value of amount of movement of the corners so as to minimize the amount of misalignment of the first marks and amount of misalignment of the second mark, and performing alignment between the master and the substrate so that the amount of movement of the corners is made close to the value. | 03-13-2014 |
20140125960 | EXPOSURE APPARATUS AND DEVICE FABRICATION METHOD - The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a driving unit configured to drive a plurality of optical elements which form the projection optical system so as to adjust an imaging state of light which passes through the projection optical system, a detecting unit configured to detect a driving error when the driving unit drives a first optical element of the plurality of optical elements, and a control unit configured to control the driving unit to drive a second optical element different from the first optical element of the plurality of optical elements so as to reduce a change in the imaging state of the light which passes through the projection optical system due to the driving error. | 05-08-2014 |
20140168620 | METHOD OF CALIBRATING A LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD AND ASSOCIATED DATA PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT - A lithography tool is calibrated using a calibration substrate having a set of first marks distributed across its surface in a known pattern. The tool is operated to apply a pattern comprising a plurality of second marks at various positions on the substrate, each second mark overlying one of the first marks and being subject to an overlay error dependent on an apparatus-specific deviation. The second marks are applied by multiple exposures while the substrate remains loaded in the tool. An operating parameter of the apparatus is varied between the exposures. An overlay error is measured and used to calculate parameter-specific, apparatus-specific calibration data based on knowledge of the parameter variation used for each exposure. | 06-19-2014 |
20140176923 | Wynn-Dyson imaging system with reduced thermal distortion - A Wynn-Dyson imaging system with reduced thermal distortion is disclosed, wherein the reticle and wafer prisms are made of glass material having a coefficient of thermal expansion of no greater than about 100 ppb/° C. The system also includes a first IR-blocking window disposed between the reticle and the reticle prism, and a second matching window disposed between the wafer and the wafer prism to maintain imaging symmetry. The IR-blocking window substantially blocks convective and radiative heat from reaching the reticle prism, thereby reducing the amount of thermally induced image distortion in the reticle image formed on the wafer. | 06-26-2014 |
20140176924 | PROJECTION EXPOSURE APPARATUS WITH OPTIMIZED ADJUSTMENT POSSIBILITY - A projection exposure apparatus for microlithography includes: an illumination system configured to illuminate a mask in an object field with exposure light; and a projection objective comprising multiple optical elements configured to image the exposure light from the mask in the object field to a wafer in an image field. The projection exposure apparatus is a wafer scanner configured to move the wafer relative to the mask during an exposure of the wafer with the exposure light. The projection objective further includes at least one manipulator configured to manipulate at least one of the optical elements and a control unit configured to control the manipulator. The control unit is configured to manipulate the optical element with the manipulator during the exposure of the wafer with the exposure light. | 06-26-2014 |
20140192335 | EUV EXPOSURE APPARATUS, EUV MASK, AND METHOD OF MEASURING DISTORTION - An EUV exposure apparatus according to embodiments includes a reticle stage which suctions a rear surface side of an EUV mask to retain the EUV mask. In addition, the EUV exposure apparatus includes a detection unit which detects a position of a measurement mark formed on the rear surface of the EUV mask in the state where the EUV mask is suctioned on the reticle stage. In addition, the EUV exposure apparatus includes a control unit which calculates a distortion amount of the EUV mask based on the position of the measurement mark and performs exposure control on a wafer while correcting the distortion amount. | 07-10-2014 |
20140204353 | EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - Provided is an exposure method that includes setting a first exposure condition so as to calculate a coefficient for predicting the fluctuation in the imaging characteristics of the projection optical system under a certain exposure condition; determining the coefficient and a permissible value calculated from aberration measurement reproducibility based on a fluctuation characteristic model; calculating a predicted amount of the fluctuation in the imaging characteristics under the first exposure condition based on the coefficient; determining whether or not the predicted amount is less than the permissible value for each time instant; and starting calculation of the predicted amount of the fluctuation in the imaging characteristics under a second exposure condition at the time at which it is determined by the determining that the predicted amount is less than the permissible value. | 07-24-2014 |
20140204354 | METHOD FOR CONTROLLING A MOTION OF OPTICAL ELEMENTS IN LITHOGRAPHY SYSTEMS - A method for controlling a vibrating optical element of a lithographic system the optical element having a predetermined number of degrees of freedom comprises: detecting a number of displacements of the optical element, each displacement corresponding to a degree of freedom, wherein the number of detected displacements is larger than the number of degrees of freedom; for each displacement according to a degree of freedom, generating a sensor signal corresponding to a movement in a degree of freedom; wherein the optical element moves as a function of a rigid body transformation matrix, the optical element movement including a first type of movement and a second type of movement; and modifying the sensor signals as a function of a modified transformation matrix, wherein the modified transformation matrix at least partially reduces at least one eigen mode or resonance of one of the first type of movements or the second type of movements. | 07-24-2014 |
20140268075 | SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING COUNTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS - Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output | 09-18-2014 |
20140347643 | LITHOGRAPHY APPARATUS, LITHOGRAPHY METHOD, LITHOGRAPHY SYSTEM, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a lithography apparatus which forms a pattern on a substrate, the apparatus including a first dosing device configured to apply a first dose to the substrate based on data corresponding to the pattern, an acquiring device configured to acquire information of an error of a dimension of a pattern formed on the substrate via application of the first dose thereto, and a second dosing device configured to apply a second dose to the substrate based on the acquired information. | 11-27-2014 |
20150022791 | EXPOSURE APPARATUS AND TRANSFER CHARACTERISTICS MEASURING METHOD - According to one embodiment, an exposure apparatus includes a light blocking unit that blocks an exposure light reflected on a reflective mask at a part other than an aperture; a detection unit that measures a light intensity of the exposure light passed through the light blocking unit; and a calculation unit that calculates, based on the light intensity, a transfer characteristic when a pattern on the reflective mask is transferred to a substrate. In the light blocking unit, a position on an aperture plane and a position in an optical axis direction of the exposure light are adjusted. The calculation unit calculates the transfer characteristic based on the position in the optical axis direction in which the light intensity is maximized. | 01-22-2015 |
20150022792 | MICROLITHOGRAPHIC APPARATUS AND METHOD OF CHANGING AN OPTICAL WAVEFRONT IN SUCH AN APPARATUS - A microlithographic apparatus comprises an optical wavefront manipulator. The latter includes an optical element and a gas-tight cavity that is partly confined by the optical element or contains it. A gas inlet device directs a gas jet towards the optical element. The location, where the gas jet impinges on the optical element after it has passed through the cavity, is variable in response to a control signal supplied by a control unit. A gas outlet is in fluid connection with the vacuum pump so that, upon operation of the vacuum pump, the pressure within the cavity is less than 10 mbar even if the gas jet passes through the cavity. | 01-22-2015 |
20150049315 | EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An exposure apparatus projects an image of a pattern formed on a mask onto a substrate through a projection optical system. The exposure apparatus includes: a prediction unit configured to predict an imaging characteristic fluctuation of the projection optical system which is caused by thermal action due to exposure, by using a model formula modeling the imaging characteristic fluctuation; and a correction unit configured to correct the imaging characteristic based on a prediction result obtained by the prediction unit. The model formula includes a composition of a plurality of functions modeling the imaging characteristic fluctuation and indicating a time dependency, each of the plurality of functions having an exposure-angle-of-view dependency and the exposure-angle-of-view dependencies of the plurality of functions being different from each other. | 02-19-2015 |
20150116678 | System and Method for Real-Time Overlay Error Reduction - Disclosed is a lithography system. The lithography system includes a radiation source to provide radiation energy for lithography exposure; a substrate stage configured to secure a substrate; an imaging lens module configured to direct the radiation energy onto the substrate; at least one sensor configured to detect a radiation signal directed from the substrate; and a pattern extraction module coupled with the at least one sensor and designed to extract a pattern of the substrate based on the radiation signal. | 04-30-2015 |
20150293461 | OVERLAP MARK SET AND METHOD FOR SELECTING RECIPE OF MEASURING OVERLAP ERROR - An overlap mark set is provided to have at least a first and a second overlap marks both of which are located at the same pattern layer. The first overlap mark includes at least two sets of X-directional linear patterns, having a preset offset a | 10-15-2015 |
20150309418 | APPARATUS AND METHODS FOR MEASURING THERMALLY INDUCED RETICLE DISTORTION - An apparatus and method for measuring thermo-mechanically induced reticle distortion or other distortion in a lithography device enables detecting distortion at the nanometer level in situ. The techniques described use relatively simple optical detectors and data acquisition electronics that are capable of monitoring the distortion in real time, during operation of the lithography equipment. Time-varying anisotropic distortion of a reticle can be measured by directing slit patterns of light having different orientations to the reticle and detecting reflected, transmitted or diffracted light from the reticle. In one example, corresponding segments of successive time measurements of secondary light signals are compared as the reticle scans a substrate at a reticle stage speed of about 1 m/s to detect temporal offsets and other features that correspond to spatial distortion. | 10-29-2015 |
20150316859 | METHOD AND APPARATUS TO CHARACTERIZE PHOTOLITHOGRAPHY LENS QUALITY - Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient. | 11-05-2015 |
20150346608 | METHOD FOR ASCERTAINING DISTORTION PROPERTIES OF AN OPTICAL SYSTEM IN A MEASUREMENT SYSTEM FOR MICROLITHOGRAPHY - A method for ascertaining distortion properties of an optical system in a measurement system for microlithography is provided, wherein the optical system images at least one structure to be measured into a measurement image. In accordance with one aspect, a method according to the invention comprises the following steps: measuring the field-dependent image aberrations of the optical system; determining a first distortion pattern present in the first image field generated by the optical system during measurement of at least one predefined structure; carrying out an optical forward simulation for the predefined structure taking account of the field-dependent image aberrations measured previously, with a second image field being generated; determining a second distortion pattern for the second image field generated previously; and ascertaining the structure-independent distortion properties of the optical system by calculating a third distortion pattern as the difference between the first distortion pattern and the second distortion pattern. | 12-03-2015 |
20150378251 | EFFICIENT SOLUTION FOR REMOVING EUV NATIVE DEFECTS - The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by providing an EUV mask substrate having a multi-layer coating disposed over a low thermal expansion material. The sizes of one or more native defects within the EUV mask substrate are measured and printable native defects having a measured size that violates one or more sizing thresholds are identified. A position at which a patterned absorber material is to be formed over the multi-layer coating is determined. The position minimizes a number printable native defects that interact with EUV radiation during an EUV lithography process. By mitigating a number of printable native defects violating the one or more sizing thresholds, the process window of an EUV reticle formed from the EUV mask substrate is improved. | 12-31-2015 |
20160018741 | ASYMMETRY COMPENSATION METHOD USED IN LITHOGRAPHY OVERLAY PROCESS - An asymmetry compensation method used in a lithography overlay process and including steps of: providing a first substrate, wherein a circuit layout is disposed on the first substrate, a first mask layer and a second mask layer together having an x-axis allowable deviation range and an y-axis allowable deviation range relative to the circuit layout are stacked sequentially on the circuit layout, wherein the x-axis allowable deviation range is unequal to the y-axis allowable deviation range; and calculating an x-axis final compensation parameter and an y-axis final compensation parameter base on the unequal x-axis allowable deviation range and the y-axis allowable deviation range. | 01-21-2016 |
20160018742 | Method of Measuring Overlay Error and a Device Manufacturing Method - The overlay error of a target in a scribelane is measured. The overlay error of the required feature in the chip area may differ from this due to, for example, different responses to the exposure process. A model is used to simulate these differences and thus a more accurate measurement of the overlay error of the feature determined. | 01-21-2016 |
20160026093 | MODEL-BASED CONTROL OF AN OPTICAL IMAGING DEVICE - The disclosure provides a method for determining an actual input value of an input variable for a control unit of an imaging device. | 01-28-2016 |
20160026094 | METHOD AND DEVICE FOR THE CORRECTION OF IMAGING DEFECTS - The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component. | 01-28-2016 |
20160054662 | PROJECTION EXPOSURE APPARATUS WITH A HIGHLY FLEXIBLE MANIPULATOR - The invention relates to a projection exposure apparatus for semiconductor lithography, comprising at least one manipulator for reducing image aberrations, wherein the manipulator has at least two optical elements that can be positioned relative to one another, wherein at least one of the optical elements is spatially dependent in terms of its effect on an optical wavefront passing therethrough such that a local phase change of a wavefront propagating in the optical system is produced in the case of a relative movement of the optical elements against one another. Here, the spatially dependent effect of the at least one optical element can be set in a reversible dynamic manner. | 02-25-2016 |