Entries |
Document | Title | Date |
20080211950 | IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus includes a pixel unit array and a driving unit. Each pixel unit includes a plurality of photoelectric conversion units, a charge-voltage converter common to the plurality of photoelectric conversion units, a plurality of transfer units which transfer electric charges generated by the plurality of photoelectric conversion units to the charge-voltage converter, an output unit which outputs a signal based on the electric charges to a signal line, and a setting unit which sets the electric potential of the charge-voltage converter. Each pixel unit is selected or deselected in accordance with the electric potential set in the charge-voltage converter. The driving unit drives the pixel unit array so that the output unit continuously outputs, to the signal line, the signal based on the electric charges generated by the plurality of photoelectric conversion units in the selected pixel unit without performing an operation of deselecting the selected pixel unit. | 09-04-2008 |
20080211951 | IMAGING DEVICE AND CAMERA - An imaging device is disclosed. The device includes: a unit pixel that outputs an analog electric signal in accordance with a signal charge; a local voltage supply circuit that generates a local voltage different from an operation voltage; a reference signal generation section that generates a reference signal based on the local voltage provided by the local voltage supply circuit; and a processing section that converts, by referring to the reference signal generated by the reference signal generation section, the analog signal provided by the unit pixel into a digital signal. In the imaging device, the reference signal generation section keeps constant a load current of the local voltage supply circuit in an operating state. | 09-04-2008 |
20080211952 | SOLID STATE IMAGE PICK-UP DEVICE AND CAMERA USING THE SOLID STATE IMAGE PICK-UP DEVICE - To suppress an influence exerted on an output video signal due to a high frequency noise from a scanning circuit. In a solid state image pick-up device including horizontal scanning circuits, and a vertical scanning circuit having a lower driving frequency than those of the horizontal scanning circuits which are arranged so as to be adjacent to different side portions of a square chip, pads are arranged at side portions of the chip, except for the side portions on the sides where the horizontal scanning circuits are arranged. The pads include pads through which a voltage or a ground potential is applied to active elements of pixels of a pixel region, pads through which voltages are inputted to amplifiers, and pads through which output signals of the amplifiers are outputted to the outside of the chip. | 09-04-2008 |
20080218620 | ULTRA LOW NOISE CMOS IMAGER - A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal D | 09-11-2008 |
20080218621 | High intrascene dynamic range NTSC and PAL imager - The invention provides a new method and apparatus for NTSC and PAL image sensors which employs fusion of adjacent row pixel charge samples to generate image data for a row. A variety of fusion schemes are possible for fusing the pixel signals from the adjacent rows. The rows of pixels are scanned so that each scan takes an odd row signal sample and, in some cases, an adjacent even row signal sample when specified conditions are met. One sampled row of the two adjacent rows integrate an image with a first integration period while the other adjacent row integrates an image with a second integration period. | 09-11-2008 |
20080225148 | REDUCED PIXEL AREA IMAGE SENSOR - An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and converting the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node. | 09-18-2008 |
20080225149 | Column sample-and-hold cell for CMOS APS sensor - A sample and hold readout circuit, and method of operation which minimizes fixed pattern noise during a read out operation. The circuit improves the consistency of the pixel to pixel output of the pixel array and increases the dynamic range of the pixel output. This is accomplished by eliminating the crowbar between the storage elements in the sample and hold circuit. Switches are added to isolate the sample and hold circuit from the column line coupled to the pixel array and to short the front plates of the capacitors together. Activating these switches allows the signals stored in the sample and hold circuit to be transferred downstream without the use of a crowbar switch. | 09-18-2008 |
20080225150 | Multi junction APS with dual simultaneous integration - A new kind of pixel is formed of two floating diffusions of different sizes and different conductivity type. The two floating diffusions have different image characteristics, and hence form a knee-shaped slope. | 09-18-2008 |
20080231737 | Dual storage node pixel for CMOS sensor - A sensor includes control circuitry and a pixel having a photo site, a first storage node and a second storage node. The control circuitry operates to transfer a first collected signal produced by light from a first image from the photo site to the first storage node during a first period, to transfer a second collected signal produced by light from a second image from the photo site to the second storage node during a second period that follows the first period and to transfer the first and second collected signals out of the pixel during a third period that follows the second period. The first storage node includes a first capacitor and a first reset gate coupled directly between the first capacitor and a reset voltage. The second storage node includes a second capacitor and a second reset gate coupled directly between the second capacitor and the reset voltage. | 09-25-2008 |
20080231738 | IMAGE SENSOR, SINGLE-PLATE COLOR IMAGE SENSOR, AND ELECTRONIC DEVICE - An image sensor includes an imaging area including a plurality of cells arrayed in a matrix on a semiconductor substrate, each of the cells including an avalanche photodiode, the avalanche photodiode including: an anode region buried in an upper portion of the semiconductor substrate; a cathode region buried in the upper portion of the semiconductor substrate separated from the anode region in a direction parallel to the surface of the semiconductor substrate; and an avalanche multiplication region defined between the anode and cathode regions, the avalanche multiplication region having an impurity concentration less than the anode and cathode regions; wherein depths of the anode and cathode regions from the surface of the semiconductor substrate are different from each other. | 09-25-2008 |
20080239124 | SOLID-STATE IMAGING DEVICE, SIGNAL PROCESSING METHOD OF SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device is disclosed. The device includes: a pixel array unit in which unit pixels including photoelectric conversion elements are two-dimensionally arranged and a first signal and a second signal are outputted to a signal line as a pixel signal; a signal processing unit including a variable gain amplifier, and an analog/digital converter; a signal supply unit supplying a reference signal; plural memory units holds the reference signal passed through the signal processing unit so as to correspond to the plural gains respectively when the variable gain amplifier is set at the plural gains respectively; and a correction unit subtracting the reference signal held in the plural memory units from the pixel signal outputted from each unit pixel in an active pixel area of the pixel array unit and passed through the signal processing unit when the variable gain amplifier is set at the plural gains respectively. | 10-02-2008 |
20080239125 | IMAGE SENSOR SUITABLE FOR OPERATING IN SUBRESOLUTION MODE - “An image sensor suitable for operating in subresolution mode, including a plurality of pixels each formed of an elementary cell including a photodiode, and a reset transistor for connecting the photodiode to a reference voltage source, and a readout transistor connected to a column bus bar for acquiring the value of the charge of the photodiode, where the elementary cells are grouped in subsets forming macro-pixels, each subset having a common electrical connection, to which each elementary cell is able to connect by its reset transistor, in order to share the charges between the photodiodes of the elementary cells of said subset, said common electrical connection being suitable for connection to the reference voltage source.” | 10-02-2008 |
20080239126 | CMOS solid-state image pickup apparatus - Basically, en electronic shutter function of a CMOS solid-state image pickup apparatus is implemented by a rolling shutter of which exposure timing sequentially shifts between pixel rows. The exposure period for one pixel row is from a time point when readout of the pixel row is started to a time point when next readout of the pixel row is started. Thus, in order to achieve exposure similar to that of a global shutter with the same exposure period applied to all of the pixel rows, there is set a blank period where no pixel signal is read out from any one of the pixel rows, and an LED is illuminated over a predetermined portion within the blank period. In this way, the CMOS solid-state image pickup apparatus having a rolling shutter function can achieve similar exposure to a global shutter. | 10-02-2008 |
20080239127 | Method and apparatus for processing a pixel signal - An NchMOS transistor Q | 10-02-2008 |
20080246868 | SOLID-STATE IMAGE SENSING DEVICE - In a solid-state image sensing device, a second substrate having transparency, including a via is placed on a solid-state image sensor having a pixel region and a logic region formed in a first substrate and in which a passive component electrically connected with the solid-state image sensor through the via is mounted on the second substrate. Thus, highly efficient location of passive components is attained for miniaturization. | 10-09-2008 |
20080246869 | Differential readout from pixels in CMOS sensor - The present invention provides an improved pixel readout circuit that compensates for common mode noise during a read out operation. This is accomplished by using a differential readout of the signal and reset value from the desired pixel compared with the reset value from a reference pixel. In this manner common mode noise can be offset and therefore minimized. In one embodiment of the invention, the reference pixel is the nearest neighbor pixel in the same row. In another embodiment, the reference pixel is the nearest neighboring pixel in a different row. | 10-09-2008 |
20080252763 | Spatial noise reduction in CMOS imagers - The spatial, so-called: “fixed-pattern” noise of matrix image sensors is reduced via on-line normalization of each pixel's photo-transmission to its own average reset noise. Said normalization is performed per each frame anew. | 10-16-2008 |
20080252764 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE CAPTURING SYSTEM - A photoelectric conversion apparatus is disclosed. A photoelectric conversion apparatus includes a pixel array in which pixels including photoelectric conversion units are arrayed in a row direction and a column direction, a plurality of first column signal lines which are electrically connected to the pixels arrayed in the pixel array in the column direction, respectively, a plurality of column amplification units which amplify signals provided via the plurality of the first column signal lines, respectively, a power supply line which provides a power supply voltage to the plurality of column amplification units, and a plurality of second column signal lines which are electrically connected to output sides of the plurality of column amplification units, respectively. Each column amplification unit includes a current limiting unit which limits the flow of an excessive current to each of the plurality of second column signal lines. | 10-16-2008 |
20080252765 | IMAGE PICKUP DEVICE - The present invention resides in an image pickup device capable of reducing the deformation of the image of the photographed object. An image pickup element included in the image pickup device has a matrix of pixels, for which the control of the charge storage and the readout of image signal data is performed on a row-by-row or column-by-column basis. The storage controller controls the charge storage operation of the image pickup element. On the other hand, the readout controller controls the readout of the image signal data from the image pickup element, while keeping constant the unit period for the readout of the image signal data from the image pickup element. A synchronization signal generator provides a synchronization signal as a timing reference for the frame-based operation of the image pickup element. The synchronization signal period controller variably controls the repetition period of the synchronization signal, while the photographing is under way. | 10-16-2008 |
20080259194 | METHOD, APPARATUS, AND SYSTEM PROVIDING A RECTILINEAR PIXEL GRID WITH RADIALLY SCALED PIXELS - Pixels in an imaging device pixel array are sized according to their geographic location in the pixel array to compensate for various optical characteristics/issues. In one example, pixel size is increased according to the distance of the pixel from the x-axis and/or the y-axis of the pixel array to correct for lens shading. | 10-23-2008 |
20080259195 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having unit pixels arranged into a two-dimensional matrix, each unit pixel containing a photoelectric conversion section for effecting a photoelectric conversion and an amplification section for amplifying and reading signal charges generated at the photoelectric conversion section; a current supply provided for each column for flowing a bias current to the amplification section; a column processing section provided for each column for processing a signal from the amplification section column by column; an output section for sequentially reading signals processed column by column at the column processing section and outputting them to an external signal processing circuit; and a bias current controlling section for controlling the bias current of the current supply in accordance with a gain setting at the external signal processing circuit. | 10-23-2008 |
20080266434 | Solid-State Imaging Device, Optical Sensor and Method of Operating Solid-State Imaging Device - A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element C | 10-30-2008 |
20080266435 | METHOD AND APPARATUS FOR DARK CURRENT AND HOT PIXEL REDUCTION IN ACTIVE PIXEL IMAGE SENSORS - A method of operating an imager pixel that includes the act of applying a relatively small voltage on the gate of a transfer transistor during a charge acquisition period. If a small positive voltage is applied, a depletion region is created under the transfer transistor gate, which creates a path for dark current electrons to be transferred to a pixel floating diffusion region. The dark electrons are subsequently removed by a pixel reset operation. If a small negative voltage is applied to the transfer gate, electrons that would normally create dark current problems will instead recombine with holes thereby substantially reducing dark current. | 10-30-2008 |
20080273107 | Data transfer circuit, solid-state imaging device and camera system - A data transfer circuit includes at least one transfer line transferring digital data, at least one data detecting circuit connecting to the transfer line, multiple holding circuits holding a digital value corresponding to the input level and transferring the digital value to the transfer line, and a scanning circuit selecting the multiple holding circuits, wherein the multiple holding circuits are laid out in parallel, and the transfer line is placed in the direction orthogonal to the direction of the parallel layout of the holding circuit and connects to the data detecting circuit placed in the orthogonal direction. | 11-06-2008 |
20080278613 | Methods, apparatuses and systems providing pixel value adjustment for images produced with varying focal length lenses - Methods, apparatuses and systems are disclosed for providing pixel value corrections in accordance with the focal length of a variable focal length lens used to capture an image. Two or more adjustment surfaces, each corresponding to a focal length of said lens, are stored. If an image is captured using a focal length of the lens which does not correspond to a stored adjustment surface, an interpolated or extrapolated adjustment surface is determined and applied to a captured image. | 11-13-2008 |
20080278614 | SOLID-STATE IMAGING DEVICE HAVING A PLURALITY OF LINES FORMED IN AT LEAST TWO LAYERS ON SEMICONDUCTOR SUBSTRATE - In a MOS-type solid-state imaging device | 11-13-2008 |
20080278615 | Solid-state image pickup device and camera system - A solid-state image pickup device, including: a pixel section including at least one pixel circuit including a mechanism for converting an optical signal into an electric signal and accumulating the electric signal in response to exposure time; a pixel driving section configured to drive the pixel section to carry out signal accumulation and signal outputting; at least one different circuit section configured to carry out a process relating to accessing to the pixel section through the pixel driving section; and a control section configured to control, at least upon the signal accumulation of the pixel circuit, the pixel driving section so as to maintain the pixel circuit in a state wherein the pixel circuit accumulates the electric signal and control supply of a power supply voltage to the different circuit section. | 11-13-2008 |
20080284888 | Image Pickup Device and Image Pickup Result Outputting Method - The present invention is applied to an image pickup device with a CMOS solid-state image pickup element, in which an analog-to-digital conversion circuit is disposed in a surface on an opposite side from an image pickup surface in a semiconductor chip | 11-20-2008 |
20080284889 | IMAGE PICKUP APPARATUS AND METHOD OF CORRECTING CAPTURED IMAGE DATA - An image pickup apparatus includes a solid-state image pickup device including a plurality of pixels arranged in a two-dimensional array, a circuit necessary for the pixel structure being shared between the pixels of a predetermined number having the same arrangement pattern; correction value generating means for generating a correction value for the pixel data read out from the pixel position of each pixel having the same arrangement pattern, the correction value being used for correcting the nonuniformity in pixel characteristics caused by a difference in position between the pixels in the arrangement pattern; and correcting means for correcting each pixel data read out from the solid-state image pickup device on the basis of the correction value for the corresponding pixel data, generated by the correction value generating means. | 11-20-2008 |
20080284890 | SOLID-STATE IMAGE-SENSING DEVICE - A solid-state image-sensing device has a MOS transistor (T | 11-20-2008 |
20080284891 | Image sensor and an electronic information device - An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a matrix which detects a pixel signal of each pixel based on a voltage difference between a reset voltage which is a reference voltage of each pixel and a signal voltage generated by a photoelectric conversion at each pixel, and includes a plurality of read lines located for each pixel column, wherein the reset voltage and the signal voltage are read from the pixel of the corresponding pixel column; and a reset current supply section provided for each read line, wherein at the same time a first reset current is supplied from a pixel to the read line when reading the reset voltage from the pixel, the section supplies a second reset current to the read line such that a sum of the first reset current and the second reset current is constant. | 11-20-2008 |
20080291309 | CURRENT/VOLTAGE MODE IMAGE SENSOR WITH SWITCHLESS ACTIVE PIXELS - A voltage and current mode active pixel sensor for high resolution imaging is presented. The photo pixel is composed of a photodiode and two transistors: reset and transconductance amplifier transistor. The switch transistor is moved outside the pixel, allowing for lower pixel pitch and increased linearity of the output photocurrent. The reset and amplifier (readout) transistors may also be shared among adjacent pixels by the introduction of transfer switches between the photodiodes and the source of the reset transistor and the gate of the readout transistor. The switch transistor outside the pixels provides biasing voltages or currents to the readout transistors to selectively turn them on when readout of the corresponding photodiode is desired and turns the readout transistor off when the corresponding photodiode is not to be read out. The increased linearity of the image sensor has greatly reduced spatial variations across the image after correlated double sampling and the column fix pattern noise is greatly improved. | 11-27-2008 |
20080291310 | Imager and system utilizing pixel with internal reset control and method of operating same - A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line. | 11-27-2008 |
20080291311 | IMAGE PICKUP DEVICE, FOCUS DETECTION DEVICE, IMAGE PICKUP APPARATUS, METHOD FOR MANUFACTURING IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING FOCUS DETECTION DEVICE, AND METHOD FOR MANUFACTURING IMAGE PICKUP APPARATUS - An image pickup device includes a pixel unit which has first pixels and second pixels. A first photoelectric conversion unit is configured to generate charges corresponding to light incident upon each of the first pixels. A first control unit is connected to the first photoelectric conversion unit and configured to control the first photoelectric conversion unit. A second photoelectric conversion unit is configured to generate charges corresponding to light incident upon each of the second pixels. The second photoelectric conversion unit is smaller than the first photoelectric conversion unit. A second control unit is connected to the second photoelectric conversion unit and configured to control the second photoelectric conversion unit. The second control unit is arranged in a space which is generated due to a size difference between the first photoelectric conversion unit and the second photoelectric conversion unit. | 11-27-2008 |
20080291312 | IMAGING SIGNAL PROCESSING APPARATUS - An image signal processing apparatus includes a sensing section which includes R, G, and B pixels and produces R, G, and B color signals, a first adding section which adds, while weighting pixels, a color signal of a center pixel of a pixel arrangement and color signals of the peripheral pixels to produce a first addition signal, a contour signal generating section which generates a contour signal from the color signals before the addition, a second adding section which adds the contour signal to the first addition signal to produce a second addition signal, a ratio coefficient calculation section which calculates a ratio coefficient of an average value of the R, G, and B color signals to a sum-up value of the average values, and an RGB signal generating section which generates new R, G, and B signals using the ratio coefficients and the first or second addition signal. | 11-27-2008 |
20080291313 | High dynamic range imager with a rolling shutter - A high dynamic range imager operates pixels utilizing at least a short integration period and a long integration period. The pixel reading circuits of the imager are adapted to process pixel signals corresponding to the integration periods in parallel. The pixel signals are converted into digital values in parallel. The digital values are each linear functions of the incident light and therefore suitable for use with conventional color processing algorithms. A pipelined rolling shutter operation may be employed where the short integration period of one row of pixels is performed simultaneously with the long integration period of another row of pixels. | 11-27-2008 |
20080303930 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE-PICKUP APPARATUS - In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups. | 12-11-2008 |
20080303931 | Data transfer circuit, solid-state imaging device and camera system - Disclosed herein is a data transfer circuit including, a plurality of data transfer lines, a plurality of data outputting sections, a plurality of data holding sections, a data-acquiring-clock supplying section a clock supplying section, and a column scan section. | 12-11-2008 |
20080303932 | ISOLATION STRUCTURE FOR IMAGE SENSOR DEVICE - Provided is an image sensor device including a substrate with a pixel region and a peripheral region. A first isolation structure is formed on the substrate in the pixel region. The first isolation structure includes a trench having a first depth. A second isolation structure is formed on the substrate in the peripheral region. The second isolation structure includes a trench having a second depth. The first depth is greater than the second depth. | 12-11-2008 |
20080309809 | IMAGE SENSOR AND READOUT METHOD - The invention relates to an image sensor, in particular a CMOS image sensor, for electronic cameras, having a plurality of light sensitive pixels arranged in rows and columns and a number of output amplifiers. The image sensor is made such that the order in which the pixels are switched to the output amplifiers is varied with respect to the order in which the pixels are arranged along a row of the image sensor. | 12-18-2008 |
20090002535 | OFFSET-COMPENSATED SELF-RESET CMOS IMAGE SENSORS - Devices and methods for improving the dynamic range and signal-to-noise ratio of image sensors. Complementary Metal Oxide Semiconductor (CMOS) image sensors that use at least one CMOS image pixel circuit, and methods that the CMOS image sensor integrated circuit is configured to perform. | 01-01-2009 |
20090002536 | Biasing scheme for large format CMOS active pixel sensors - An image sensor includes circuitry compensating for voltage drops in a V | 01-01-2009 |
20090009643 | MOS TYPE SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR DRIVING SUCH MOS TYPE SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A MOS type solid-state image pickup device includes a pixel unit which includes image pickup elements arranged two-dimensionally; a readout shift register; an electronic shutter shift register; a signal processing unit which extracts a pixel signal from the selected pixel; a horizontal shift register which outputs a column selection signal; and an amplifier circuit which amplifies the extracted pixel output signal. Each of the shift registers has a function of generating a dummy pulse during a blanking period. When the blanking period occurs after the completion of scanning up to the last line, a selection signal is outputted alternately to the last line and the second-from-the-last line of the shift register. | 01-08-2009 |
20090009644 | IMAGING APPARATUS AND METHOD FOR CONTROLLING THE SAME - In an imaging apparatus, a first conversion unit multiplexes input signals including control signals for driving an image sensor to generate a multiplex signal having a frequency higher than those of the input signals. A transfer unit transfers the multiplexed signal generated by the first conversion unit according to low-voltage differential signaling. A reception unit receives the multiplexed signal from the transfer unit. A second conversion unit extracts the control signals for driving the image sensor from the multiplexed signal received by the reception unit. A third conversion unit performs at least one of correction processing and development processing on a signal generated by the image sensor. A signal generation unit generates and supplies processing timing control signals to the first conversion unit and the third conversion unit. | 01-08-2009 |
20090009645 | Image Sensor, Method for Operating an Image Sensor, and Computer Program - An image sensor includes a plurality of image elements configured to provide associated image element signals which are dependent on light intensities incident on the image elements. The image sensor includes an accumulation circuit with a plurality of charge storage elements, wherein the accumulation circuit is configured to change charges on the charge storage elements during a phase in dependence on image element signals of respectively associated image elements. The accumulation circuit is further configured to change an association between charge storage elements and associated image elements in successive phases, so that in operation, a charge on one of the charge storage elements depends on image element signals of plural image elements in a plurality of phases. | 01-08-2009 |
20090015699 | IMAGE SENSING APPARATUS DRIVING METHOD, IMAGE SENSING APPARATUS, AND IMAGE SENSING SYSTEM - Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution. | 01-15-2009 |
20090015700 | Apparatus and method for eliminating artifacts in active pixel sensor (APS) imagers - An active pixel sensor (APS) that includes circuitry to eliminate artifacts in digital images. The APS includes a comparator for comparing a signal level from a pixel to an adjusted saturation voltage to determine if the pixel is saturated. If the pixel is saturated, the signal output from the pixel is replaced with an analog voltage having a maximum value corresponding to a brightest pixel in the image. | 01-15-2009 |
20090021623 | Systems, methods and devices for a CMOS imager having a pixel output clamp - Embodiments of a pixel read out circuit in an imager device is described. The pixel read out circuit includes an output node that is connected to a plurality of pixel cells. An output signal from a selected one of the plurality of pixel cells is applied to the output node. The pixel read out circuit also includes a clamp-out circuit that limits the magnitude of the output signal to a voltage determined by the voltage of a reference signal to prevent the output signal from reaching a level that might exceed the dynamic range of analog circuitry receiving the output signal. | 01-22-2009 |
20090021624 | Camera module back-focal length adjustment method and ultra compact components packaging - The present invention relates to methods of manufacturing ultra-compact camera modules, adjusting them, post production, to precise focal point settings, and sealing the precisely aligned assembly to maintain the focal point. Also, the invention specifically relates to ultra-compact camera module apparatuses. | 01-22-2009 |
20090021625 | Solid-State Imaging Device - According to the present invention, as a structure of a pixel section ( | 01-22-2009 |
20090021626 | SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME - A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively. | 01-22-2009 |
20090021627 | HIGH DYNAMIC RANGE CASCADED INTEGRATION PIXEL CELL AND METHOD OF OPERATION - A cascaded imaging storage system for a pixel is disclosed for improving intrascene dynamic range. Charges accumulated in a first capacitor spill over into a second capacitor when a charge storage capacity of the first capacitor is exceeded. A third capacitor may also be provided such that charges accumulated by said second capacitor spill over into the third capacitor when the charge storage capacity of the second capacitor is exceeded. | 01-22-2009 |
20090027531 | PIXEL MIXTURE METHOD - The present invention provides a pixel mixture method for mixing multiple pixels in a high-pixel solid-state image sensing device capable of obtaining a high-definition image while reducing the number of the readout pixels in an imaging device having the high-pixel solid-state image sensing device with a color filter array (CFA). | 01-29-2009 |
20090027532 | IMAGE SENSOR CONTROL METHOD - A method for acquiring images using at least one CMOS-type sensor with four transistors including an acquisition node and a read node, where the read node can receive a compression signal, including a step of reading a reference state of the sensor; a reset step; an integration step, during which the sensor is exposed and during part of which the compression signal is applied to the read node; and a step of reading the data acquired during the integration step; the read node being, during the integration step, isolated from the acquisition node, except immediately before the application of the compression signal, at which time the acquisition node is connected to the read node long enough to enable a transfer of the charges present at the acquisition node to the read node. | 01-29-2009 |
20090027533 | SOLID STATE IMAGING DEVICE AND METHOD OF DRIVING THE SOLID STATE IMAGING DEVICE - A row scanner selects an arbitrary row in an pixel array unit. Per-column AD converters separately convert voltage signals respectively outputted from a column of a plurality of unit pixels in the selected arbitrary row into digital signals. A column scanner sequentially outputs the digital signals by a column-scanning operation thereof. An AD conversion result adjuster judges whether or not the digital signals reach a predetermined judgment value or the status equivalent to the digital signals reaching the predetermined judgment value is generated, and fixes the digital signals to digital pixel values set in accordance with the predetermined judgment value when a result of the judgment is positive. | 01-29-2009 |
20090027534 | IMAGE PICKUP DEVICE - An image pickup device has a signal processing part configured to perform signal process for the first to third color signals. The signal processing part includes a first color generator configured to generate a fourth color signal corresponding to a reference pixel based on a ratio between a second color signal at a pixel located in vicinity of the reference pixel and a first color signal at a pixel located in vicinity of the reference pixel, a second color generator configured to generate a fifth color signal corresponding to the reference pixel based on a ratio between a third color signal at a pixel located in vicinity of the reference pixel and the first color signal at a pixel located in vicinity of the reference pixel, and a image quality converter configured to generate color signals by performing a predetermined image process based on the first to fifth color signals. | 01-29-2009 |
20090033779 | Method, apparatus, and system providing multi-column shared readout for imagers - An imager and method of operating an imager employing multi-column shared readout circuitry. Columns of a pixel array are organized into groups, each group having a respective multi-column shared readout circuit. The columns of each group are readout serially but in parallel with the columns of other groups. Each multi-column shared readout circuit may comprise a black level correction clamp, a multi-column analog gain amplifier, a analog-to-digital converter, a digital offset correction block, and a digital gain calibration block. A single-column analog gain amplifier may amplify an analog pixel signal value of each column prior to processing by a respective multi-column shared readout circuit. | 02-05-2009 |
20090033780 | SOLID STATE IMAGING DEVICE - An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line. Here, the scan timing generation unit and the switch unit, and the external output timing unit and the switch unit control the readout and the output of the pixel signals, respectively, so that a time period required for the readout of the pixel signals from the capacitance element to the signal line is longer than a time period required for the output of the pixel signals from the signal line to the common signal line. | 02-05-2009 |
20090033781 | IMAGE SENSING APPARATUS AND IMAGE CAPTURING SYSTEM - An image sensing apparatus comprises a pixel and a driving unit, wherein the driving unit includes a buffer circuit including a first PMOS transistor and a first NMOS transistor, and letting V | 02-05-2009 |
20090033782 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit. | 02-05-2009 |
20090033783 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises: a pixel array in which a plurality of pixels are arrayed in a row direction and column direction; a selection unit configured to select a row of the pixel array; and a readout unit configured to read out signals from the pixels of the row selected by the selection unit, wherein, when the readout unit reads out signals from the pixels of not all rows but some rows in the pixel array, the selection unit resets the pixels of rows in adjacent regions adjacent to readout rows from which signals are read out, and the pixel array includes rows, in which the pixels are not reset by the selection unit, in regions other than the readout rows and the adjacent regions. | 02-05-2009 |
20090040351 | Method and apparatus for reducing noise in a pixel array - A method and apparatus for sampling pixels from a pixel array, the pixels being sampled at different times. | 02-12-2009 |
20090040352 | SOLID-STATE IMAGE CAPTURE DEVICE, ANALOG/DIGITAL CONVERSION METHOD FOR SOLID STATE IMAGE CAPTURE DEVICE, AND IMAGE CAPTURE DEVICE - A solid state image capture device includes a pixel array unit having unit pixels including a photoelectric conversion element disposed in a matrix shape and analog/digital conversion means for converting an analog pixel signal read from the unit pixel of the pixel array unit into digital data. The analog/digital conversion means includes a comparator unit for converting a magnitude of the pixel signal into information in a time axis direction, a counter unit for performing a count process during a time period from a start time of a comparison process at the comparator unit to an end time of the comparison process, a multi-phase clock generate unit for generating multi-phase clocks having a constant phase difference, a latch unit for latching logic states of the multi-phase clocks, and a decode unit for decoding latch data of the latch unit to obtain a value lower than a count value. | 02-12-2009 |
20090040353 | IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes plural color detection pixels (R, G, B) and plural luminance detection pixels (W). The color detection pixels (R, G, B) and the luminance detection pixels (W) are mixed and arranged in a two-dimensional array on a surface of a semiconductor substrate. The solid state imaging device is configured to read detection signals of the color detection pixels (R, G, B) and detection signals of the luminance detection pixels (W) independently. In driving of the solid-state imaging device, a first time period from a time when the color detection pixels (R, G, B) start to be exposed to a time when the detection signals are read and a second time period from a time when the luminance detection pixels (W) start to be exposed to a time when the detection signals are read are controlled independently. | 02-12-2009 |
20090040354 | IMAGE-PICKUP APPARATUS AND CONTROL METHOD THEREOF - An image-pickup apparatus | 02-12-2009 |
20090046189 | Method and apparatus providing shared pixel straight gate architecture - Methods and apparatuses using four-way-shared readout circuits to increase pixel fill factor. | 02-19-2009 |
20090046190 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM - A solid-state image pickup device includes a pixel array including a plurality of pixels arranged in a matrix, and a pixel signal read-out circuit for reading out a pixel signal from the pixel array in units of a plurality of pixels. The pixel signal read-out circuit includes a plurality of comparators and a plurality of counters. The comparators are disposed to correspond to a column of the pixels, and compare a read-out signal potential and a reference voltage to generate a determination signal and output the determination signal. The counters are controlled by outputs of the comparators. Each of the counters is configured to count a comparison time of a corresponding comparator of the comparators. The counters have a different operation period for each one or a plurality of columns. | 02-19-2009 |
20090051797 | DIGITAL IMAGE CAPTURING DEVICE AND METHOD FOR CORRECTTING IMAGE TILT ERRORS - An digital image capturing device includes an image sensor, a tilt sensor, an image processor, and a memory device. The image sensor is configured for capturing an image of an object. The tilt sensor is configured for sensing a tilt angle of the image sensor. The image processor is configured for adjusting an orientation of the captured image based on the sensed tilt angle to correspond to the orientation of the object. The memory device is used for storing the adjusted image. | 02-26-2009 |
20090051798 | Wide dynamic range linear-and-log active pixel - A pixel circuit having an improved dynamic range is disclosed. When incoming light detected by the photodiode is strong, the accumulated (integrated) charge on a signal capacitor becomes large. To compensate, the excess signal component becomes compressed and the pixel circuit begins operating in logarithmic rather than linear mode. In this way, the circuit can achieve a higher dynamic range more closely resembling the image sensing properties of the human eye. | 02-26-2009 |
20090059048 | IMAGE SENSOR WITH HIGH DYNAMIC RANGE IN DOWN-SAMPLING MODE - An image sensor has an array of photo-sensitive pixels and supports a line-by-line read out of rows. In a normal resolution each row has the same nominal gain and exposure time. In a down-sampling mode the exposure times of the rows are varied according to an alternating sequence having at least two different exposure times. During down-sampling, raw pixel data from rows with different exposure times is combined to simultaneously achieve down-sampling and a high dynamic range. | 03-05-2009 |
20090066825 | SOLID-STATE IMAGING DEVICE AND ITS DRIVING METHOD - A driving method is used in a solid-state imaging device including a plurality of pixel circuits which are arranged in rows and columns, and each of which has a photoelectric conversion unit and a charge accumulation unit and receives a common power source. The driving method includes steps of: reading out, to the outside of the pixel circuit, a photocharge generated at a photoelectric conversion unit in a pixel circuit in a readout row, after resetting a potential of the charge accumulation unit in the pixel circuit to a potential of the common power source while supplying a bias current to the pixel circuit for readout, the photocharge being transferred to the charge accumulation unit as a signal charge; discharging a photocharge generated at a photoelectric conversion unit in a pixel circuit in a discharge row that is to be a readout row later, after resetting a potential of a charge accumulation unit in the pixel circuit to a potential of the common power source, the photocharge being transferred to the charge accumulation unit as an unnecessary charge; and uniformizing a potential of the charge accumulation unit to be reset in the discharging in the case where the discharging is executed following the reading out and in the case where the discharging is executed independently | 03-12-2009 |
20090066826 | Image sensor having a ramp generator and method for calibrating a ramp slope value of a ramp signal - An apparatus and method for calibrating a ramp slope value of a ramp signal to increase the accuracy of the slope of the ramp signal used within CMOS image sensors. An image sensor includes an active pixel sensor (APS) array, a ramp signal generator and an analog-to-digital converter (ADC). The APS array is configured to generate a reset signal and an image signal for a pixel of a selected row of the APS array. The ramp signal generator is configured to generate a ramp signal, a ramp slope value of the ramp signal being adjusted based on a slope control signal. The ADC is configured to generate a digital code based on the ramp signal and a difference between the reset signal and the image signal. | 03-12-2009 |
20090073297 | TWISTED INPUT PAIR OF FIRST GAIN STAGE FOR HIGH SIGNAL INTEGRITY IN CMOS IMAGE SENSOR - Methods for forming conductors and global bus configurations for reducing an interference signal from electromagnetic interference (EMI) source are provided. First and second conductor lines are formed on an integrated circuit in a twisted pair configuration. A differential amplifier is formed on the integrated circuit and coupled to each of the first and second conductor lines. The first and second signals are respectively transmitted through the first and second conductor lines and are modified by the interference signal. The modified first and second signals are differentially amplified by the differential amplifier so that the interference signal is substantially cancelled. | 03-19-2009 |
20090073298 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a pixel including, a column signal line, a readout circuit, an output line, and an output unit. The readout circuit includes a first accumulation unit, a first opening/closing unit, a second accumulation unit, a transmission unit, and a second opening/closing unit. A capacitance of the first accumulation unit is smaller than a capacitance of the second accumulation unit, and the signal held by the second accumulation unit is read out to the output unit based on the capacitance of the second accumulation unit and the capacitance of the output line. | 03-19-2009 |
20090086074 | DUAL MODE CAMERA SOLUTION APPARATUS, SYSTEM, AND METHOD - A camera solution includes an image sensor and an image processing and control system. At least two different operating modes are supported, with one of the modes having a higher dynamic range. Control of the dynamic range is provided at the system level. The system supports statically or dynamically selecting an operating mode that determines the dynamic range of a camera. In one implementation, the system supports the use of either a conventional image sensor that does not natively support a high dynamic range or a dual-mode image sensor. | 04-02-2009 |
20090086075 | SOLID-STATE IMAGE PICKUP DEVICE, DRIVING METHOD THEREOF, AND CAMERA SYSTEM - A solid-state image pickup device includes a pixel array including pixels arranged in a matrix, a pixel signal readout unit, and a timing control unit for controlling processing of the pixel signal readout unit by using a timing signal. The pixel signal readout unit includes: a plurality of comparators for comparing a readout signal potential with a reference voltage to generate a determination signal and outputting the determination signal, and a plurality of counters. Each counter counts a comparison time of each corresponding one of the comparators. The timing control unit (a) divides a predetermined processing period into at least a first-time readout period, a first comparison period, a second-time readout period, and a second-time comparison period, (b) classifies the periods into two periods, and (c) generates a timing signal of processing of each divided period by counting for each divided period in the counter. | 04-02-2009 |
20090086076 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a reflection timing control signal output unit, a data holding unit, and a collective-reflection processing unit. The reflection timing control signal output unit outputs a reflection timing control signal for controlling a timing of outputting operation setting data. The data holding unit latches the operation setting data inputted from outside and outputs the operation setting data. The collective-reflection processing unit collectively latches the operation setting data in synchronism with the reflection timing control signal, and outputs the latched operation setting data to a driving section. The reflection timing control signal output unit receives a vertical synchronization signal and an end-of-communication signal representative of an end of communication of a series of operation setting data from outside, and outputs the reflection timing control signal to the collective-reflection processing unit in synchronism with the vertical synchronization signal after the end-of-communication signal is received. | 04-02-2009 |
20090086077 | SOLID-STATE IMAGE CAPTURE APPARATUS AND IMAGE CAPTURE APPARATUS - A solid-state image capture apparatus includes a pixel array section with a plurality of pixels arranged in two-dimensional directions, each having a photoelectric conversion section, and pixel drive control section for performing pixel signal readout by sequentially scanning the pixel array section either in a row direction or in a column direction, and driving and controlling individual pixels of the pixel array section through a level shifter circuit. The pixel drive control means includes thinning-out readout control means for performing pixel signal readout, reset control means for resetting either a non-readout pixel row or a non-readout pixel column not being selected by the thinning-out readout control means and gate means for causing the pixel drive control means to perform driving control, whereby current concurrently flowing into the level shifter circuit during the thinning-out readout driving, may be avoided and large current caused by the level shifter circuit may be suppressed. | 04-02-2009 |
20090096904 | Method and apparatus providing column parallel architecture for imagers - An imaging apparatus and a method using column processing circuits arranged in multiple rows for processing pixels in a pixel array. | 04-16-2009 |
20090096905 | IMAGE PICKUP APPARATUS - An image pickup apparatus which is capable of providing optimal image quality according to a scene to be shot, and is improved in user-friendliness. A determination unit comprising a comparator, a comparison potential, and an OR element determines an output level of each pixel or each area formed by a plurality of pixels in the image pickup device with reference to a predetermined output level. A system controller changes a charge transfer period in a horizontal blanking period for a line including a pixel or an area of with the output level is not lower than the predetermined output level, according to a result of determination by the determination unit. | 04-16-2009 |
20090109313 | Self-Triggering CMOS Image Sensor - An image sensor and method for using the image sensor to capture an image are disclosed. The image sensor includes an imaging array, a first block amplifier and a controller. A first plurality of pixels in the imaging array includes pixels having a photodiode connected to a first node by a gate transistor, a reset transistor connected between the first node and a reset node, a pixel amplifier having an input connected to the first node and an output, and an output gate for connecting the pixel amplifier output to an output bus. The sensor has a monitoring mode and an image capture mode. In the monitoring mode the reset node is connected to the first block amplifier whose output is monitored and used to trigger the image capture mode when the output exceeds a predetermined threshold. | 04-30-2009 |
20090109314 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 04-30-2009 |
20090122173 | LOW NOISE READOUT APPARATUS AND METHOD FOR CMOS IMAGE SENSORS - A low noise readout apparatus and method for CMOS image sensors having a complementary metal oxide semiconductor with a plurality of pixels, each pixel having a charge-generating unit configured to release a charge, a potential well for receiving the released charge from the charge-generating unit, a first gate, a second gate and a floating gate, in series and adjacent the potential well, the first gate transfers the charge from the potential well to the second gate, the second gate transfers the charge to the floating gate to generate a first corresponding readout voltage, the first gate, the second gate and the floating gate transfer the charge back and forth, at least once, to generate at least a second corresponding readout voltage, and a readout circuit coupled to the floating gate, the readout circuit measures a voltage corresponding to the charge transferred to the floating gate. | 05-14-2009 |
20090122174 | SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME - A solid-state imaging device includes: an effective pixel area in which a plurality of pixels having photodiodes (PD) are provided in row and column directions, the effective pixel area being capable of allowing light from outside to be incident in each PD and generating electric signals by photoelectric conversion; and a non-effective pixel area in which a plurality of pixels covered with a light-shielding film are provided, and a reference area and a failure-detection pattern area are formed as sub-areas. Each pixel in the reference area has a PD. The failure-detection pattern area has a configuration such that pixels with PD and pixels without PD are arranged in combination in a predetermined arrangement pattern. Each of pixels in the effective pixel area is driven so as to output a pixel signal, and each of pixels in the non-effective pixel area including the failure-detection pattern area also can be driven so as to output a pixel signal. A failure such that a signal from an image sensor is not outputted at all can be detected even in a dark environment. | 05-14-2009 |
20090128677 | Dual sensitivity image sensor - A dual sensitivity image sensor provides a standard mode and a high-sensitivity mode of operation via iSoC integration. In addition to boosting sensitivity, the high sensitivity mode also reduces temporal noise thereby optimally boosting the Signal-to-Noise Ratio (SNR) of the image sensor. The circuit does not significantly increase pixel complexity and requires minimal changes to the support circuits in the iSoC including the addition of support and control circuitry to facilitate seamless mode change. | 05-21-2009 |
20090128678 | SOLID-STATE IMAGING DEVICE, DRIVING CONTROL METHOD, AND IMAGING APPARATUS - A solid-state imaging device and an imaging apparatus are provided. The solid-state imaging device performs an AD conversion in a column parallel for an analog pixel signal outputted from each of pixels disposed in a two-dimensional matrix shape. The solid-state imaging device includes: an AD conversion unit including a plurality of pixel signal accumulating units; a first switching unit for disconnecting parallel connection of a second pixel signal accumulating unit other than a first pixel signal accumulating unit which is one of the plurality of pixel signal accumulating units; and a second switching unit for connecting the second pixel signal accumulating unit to a pixel signal line of a second pixel adjacent to the first pixel in a row direction, when parallel connection of the second pixel signal accumulating unit is disconnected by the first switching unit. | 05-21-2009 |
20090128679 | Solid State Image Pickup Device - This invention improves linearity of a solid-state image pickup device beyond that of the prior art source follower to improve image quality. The image pickup device has plural pixels disposed in an array. Each pixel includes: a photodiode (PD); a transfer transistor (Tr | 05-21-2009 |
20090135284 | Image sensor with a gated storage node linked to transfer gate - A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel. | 05-28-2009 |
20090141155 | HIGH DYNAMIC RANGE IMAGING CELL WITH ELECTRONIC SHUTTER EXTENSIONS - A pixel sensor cell of improved dynamic range and a design structure including the pixel sensor cell embodied in a machine readable medium are provided. The pixel cell comprises a coupling transistor that couples a capacitor device to a photosensing region (e.g., photodiode) of the pixel cell, the photodiode being coupled to a transfer gate and one terminal of the coupling transistor. In operation, the additional capacitance is coupled to the pixel cell photodiode when the voltage on the photodiode is drawn down to the substrate potential. Thus, the added capacitance is only connected to the imager cell when the cell is nearing its charge capacity. Otherwise, the cell has a low capacitance and low leakage. In an additional embodiment, a terminal of the capacitor is coupled to a “pulsed” supply voltage signal that enables substantially full depletion of stored charge from the capacitor to the photosensing region during a read out operation of the pixel sensor cell. In various embodiments, the locations of the added capacitance and photodiode may be interchanged with respect to the coupling transistor. In addition, the added capacitor of the pixel sensor cell allows for a global shutter operation. | 06-04-2009 |
20090141156 | REFERENCE VOLTAGE GENERATION IN IMAGING SENSORS - The claimed subject matter provides systems and/or methods that facilitate generating and/or maintaining low noise reference voltages for CMOS imaging System-on-Chip (iSoC) sensors. A primary reference voltage can be generated utilizing a low noise bandgap. Further, the primary reference voltage can be filtered via a low pass filter. The filtered, primary reference voltage can thereafter be distributed to a plurality of isolated domains. Each of the isolated domains can generate an independent set of reference voltages based upon the filtered, primary reference voltage. Moreover, subsets of these reference voltages can be employed by programmable digital to analog converters (DACs). Each of the reference voltages can be isolated from switching noise and/or clock glitches generated within each domain. Further, each DAC output can be buffered to have adequately low impedance with appropriate drive capability and requisite signal swing. | 06-04-2009 |
20090141157 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus includes an output unit including a first output line which transmits a first signal of the first pixel, a second output line which transmits a second signal of the first pixel, a third output line which transmits a first signal of the second pixel, a fourth output line which transmits a second signal of the second pixel, a first difference circuit which operates the difference between the first signal and the second signal of the first pixel to generate a first image signal, and a second difference circuit which operates the difference between the first signal and the second signal of the second pixel to generate a second image signal, wherein the first output line is arranged between the third output line and the fourth output line, and the third output line is arranged between the first output line and the second output line. | 06-04-2009 |
20090147119 | OPTICAL SENSOR CIRCUIT AND IMAGE SENSOR - An optical sensor circuit has a photodiode PD, a MOS transistor Q | 06-11-2009 |
20090153713 | Imaging Device - An imaging device including an imaging element having a plurality of pixels for switching a linear conversion mode for linearly converting incident light to an electric signal and a logarithm conversion mode for logarithmically converting incident light to an electric signal on the basis of incident light intensity,
| 06-18-2009 |
20090153714 | Method for resetting time-based CMOS image sensor - A method of resetting a time-based CMOS image sensor may be provided, where the time-based CMOS image sensor may include a photodiode, a transfer transistor transferring photo-generated charges generated in the photodiode to a floating diffusion node and having a gate to which a ramp signal is input, and a reset transistor resetting the photodiode and the floating diffusion node. The method may include generating photo-generated charges at the photodiode, transferring the photo-generated charges to the floating diffusion node in response to a ramp signal; and resetting a reset electron potential of the photodiode to be higher than a reset electron potential of the floating diffusion node. | 06-18-2009 |
20090153715 | PIXEL READ CIRCUITRY - A method of reading voltages from an image sensor having an array of pixels, each pixel Having at least one photodiode connectable to a storage node, the method including: controlling each pixel in a row of pixels to store and output a first voltage value at a first instance, a second voltage value at a second instance, and a third voltage value at a third instance, the first, second and third voltage values being representative of charge accumulated by the photodiodes during an integration phase; comparing the first voltage value from each pixel with a reference threshold; sampling for each pixel, based on the comparison, one of the second and third voltage values: and generating an output pixel value based on the sampled one of the second and third voltage values | 06-18-2009 |
20090153716 | SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid state imaging device is provided and includes: a semiconductor substrate a photoelectric conversion element including a pair of electrodes and a photoelectric conversion layer sandwiched between the pair of electrodes; a signal output circuit including an MOS transistor for outputting a signal responsive to an electric charge generated by the photoelectric conversion layer; a first electric charge storage section which is provided in the semiconductor substrate and in which the electric charge generated by the photoelectric conversion layer is directly stored; a second electric charge storage section provided in the semiconductor substrate and connected to a gate of an output transistor in the signal output circuit; and an electric charge transfer section that transfers the electric charge, stored in the first electric charge storage section, to the second electric charge storage section. | 06-18-2009 |
20090153717 | CMOS ACTIVE PIXEL SENSOR WITH A SAMPLE AND HOLD CIRCUIT HAVING MULTIPLE INJECTION CAPACITORS AND A FULLY DIFFERENTIAL CHARGE MODE LINEAR SYNTHESIZER WITH SKEW CONTROL - An CMOS active pixel sensor (APS) imaging system include circuitry to compensate for different analog offset levels from the CMOS pixel array. More specifically, the compensation is performed in the analog (charge) domain. A digital correction value, which may be measured as part of the operation or testing of the CMOS APS system, is provided to a offset correction block circuit, to generate an analog electrical signal. The analog electrical signal is supplied to a sample-and-hold circuit including a charge amplifier. The signal read from the pixel array, after conditioning through an analog signal chain, is also supplied to the charge amplifier, which has a linear transfer function and outputs the compensated signal. | 06-18-2009 |
20090153718 | ROLLING-RESET IMAGER - An imaging system comprises a rolling-reset imager that forms an electronic image of an object, a light source illuminating the object with pulsed light, and a bandpass optical filter disposed between the object and the rolling-reset imager. The pulsed light has an illumination frequency spectrum and an illumination pulse width defining an effective exposure time for forming the image of the object. The bandpass optical filter has a frequency pass band permitting transmission of a significant portion of the illumination frequency spectrum while at least approximately inhibiting transmission of at least some light having frequencies outside the illumination frequency band. An imaging method illuminates an object with light in a given frequency range, so that the illumination light reflects from the object along with background light. The method filters the reflected light so as to attenuate at least some of the background light by a greater attenuation factor than the illumination light. The method forms a pixelized electronic image based on the filtered light on a rolling-reset basis. | 06-18-2009 |
20090160989 | Low noise readout apparatus and method with snapshot shutter and correlated double sampling - A low noise readout apparatus and method for CMOS image sensors having a photosensitive element configured to collect charge when light strikes the photosensitive element, a reset gate adjacent the photosensitive element and configured to drain excess charge from the photosensitive element, a first electrode, a second electrode and a third electrode, in series and adjacent the photosensitive element, the first electrode actuated to transfer a signal charge from the photosensitive element to the first electrode, the second electrode actuated to transfer the signal charge from the first electrode to the second electrode, the third electrode actuated to transfer the signal charge from the second electrode to the third electrode and onto a sense node, and a readout circuit coupled to the sense node, the readout circuit measures a voltage corresponding to the signal charge transferred to the sense node. | 06-25-2009 |
20090160990 | Imager method and apparatus having combined select signals - An imaging device and method for operating the device. The device comprises a pixel array having a plurality of pixels arranged in rows and columns and a plurality of readout circuits for the pixels. A reset circuit in one readout circuit is simultaneously operated with a row select circuit in another readout circuit using a common select line. A transfer select circuit may also be simultaneously operated with the common select line. | 06-25-2009 |
20090160991 | UNIT PIXEL FOR USE IN CMOS IMAGE SENSOR - A unit pixel of a CMOS image sensor includes one PMOS for receiving light and generating electric signals and one NMOS that outputs the signals applied from the PMOS. Therefore, the pitch size of the pixel itself can be reduced, and the whole area by the image sensor can be also reduced. The present unit pixel improves image embodying characteristics even at low illumination, and does not require integration time, thereby enabling production of a moving picture at high speed. Further, the present unit pixel of the image sensor is formed using only a simple MOS process, which dramatically simplifies the fabrication steps. Therefore, process yield can be improved, while production cost savings can be realized. According to the present discussion, the unit pixel of a CMOS image sensor formed on a P type semiconductor substrate, includes an N type doped well, a PMOS for receiving light and generating electric signals, and an NMOS for outputting the signals from the PMOS. | 06-25-2009 |
20090160992 | IMAGE PICKUP APPARATUS, COLOR NOISE REDUCTION METHOD, AND COLOR NOISE REDUCTION PROGRAM - An image pickup apparatus includes an image sensor including a color filter having pixels of different colors arranged in a predetermined order and a demosaic processor. The image sensor receives a subject image and outputs an image signal including color signals of the different colors. The demosaic processor generates color signals of the different colors for each of pixels of the image from the image signal. The demosaic processor includes a generation unit and a noise reduction unit. The generation unit performs computation using a target color signal representing a predetermined target color signal included in the image signal and a predetermined different color signal so as to generate a color-related signal that associates the target color signal with the predetermined different color signal for a pixel of the target color signal. The noise reduction unit performs a noise reduction process on the color-related signal generated by the generation unit. | 06-25-2009 |
20090167916 | IMAGING APPARATUS AND METHODS, AND STORING MEDIUM HAVING COMPUTER PROGRAM TO PERFORM THE METHODS - An imaging apparatus and method using a line memory controller for writing first image region data of an amount less than the total storage capacity of a line memory among image data output on a line-by-line basis from an imaging device, to the line memory and reading the first image region data from the line memory, an SDRAM controller for writing a second image region data besides the first image region data among image data output from the imaging device on a line-by-line basis to a storage medium and reading the second image region data from that storage medium after image data output from the imaging device is ended, and a line memory controller for writing the second image region data read from the storage medium to the line memory. Thus, the size of and power consumption by the storage medium can be reduced. | 07-02-2009 |
20090174801 | METHOD AND APPARATUS FOR IDENTIFICATION AND CORRECTION OF ABERRANT PIXELS IN AN IMAGE SENSOR - An apparatus and method for identifying aberrant pixels in an image sensor. The apparatus includes a light sensitive element configured to detect a first signal value representing a first level of an incident light and a light sensitive region separate from the light sensitive element configured to detect a second signal value representing a second level of the incident light. Comparing circuitry is configured to compare the first signal value and the second signal value and to output a signal indicating the pixel is an aberrant pixel if the first and second signal values differ by more than a maximum threshold value or less than a minimum threshold value in a threshold value range. | 07-09-2009 |
20090174802 | Image Sensor and Method for Reading Out Pixels of the Image Sensor - Image sensor, which comprises a plurality of pixels arranged as a pixel array with rows and columns and at least one read-out arrangement for reading out the pixels row by row. The columns are grouped into blocks with a certain number N of columns. Each read-out arrangement comprises N column read out circuits and an addressing circuit for with at least two groups of addressing lines for addressing the blocks. The blocks are selectively addressed by the groups of addressing lines in a way that a read-out sequence of blocks addressed by the groups is continuous across all blocks. | 07-09-2009 |
20090180013 | Solid image capture device and electronic device incorporating same - The solid image capture device | 07-16-2009 |
20090180014 | SOLID-STATE IMAGING APPARATUS, IMAGING SYSTEM, AND DRIVE METHOD OF SOLID-STATE IMAGING APPARATUS - The present invention is directed to provide a solid-state imaging apparatus and a method of driving the solid-state imaging apparatus. If the total read out time of all of the pixels is shortened when effective pixels are thinned out to be read out without thinning out OB pixels, then the reset time period of each row is different from each other, and the problem of uneven charge accumulation time periods is caused. An improvement by the present invention is that, if no signals are read out from a part of the rows of the pixels in an effective pixel region to skip the rows, then the time period in which the rows to be skipped are selected is made to be shorter than the time period in which the rows from which signals are read out are selected, and the pixels in the optical black pixel region and the pixels in the effective pixel region are driven by the drive pulses of patterns different from each other. | 07-16-2009 |
20090180015 | WIDE DYNAMIC RANGE PINNED PHOTODIODE ACTIVE PIXEL SENSOR (APS) - An image apparatus and method is disclosed for extending the dynamic range of an image sensor. A first linear pixel circuit produces a first pixel output signal based on charge integration by a first photo-conversion device over a first integration period. A second linear pixel circuit produces a second pixel output signal based on charge integration by a second photo-conversion device over a second integration period, where the second integration period is shorter than the first integration period. A sample-and-hold circuit captures signals representing the first and second pixel output signals. | 07-16-2009 |
20090180016 | DIFFERENTIAL COLUMN READOUT SCHEME FOR CMOS APS PIXELS - The present invention provides an improved column readout circuitry and method of operation which minimizes substrate and other common mode noise during a read out operation. The circuit improves the consistency of the pixel to pixel output of the pixel array and increases the dynamic range of the pixel output. This is accomplished by obtaining a differential readout of the reset signal and integrated charge signal from a desired pixel along with the reset signal and charge signal from a reference circuit. In this manner common mode noise can be minimized by a combination of signals from the desired and reference pixels in the sample and hold aspect of the column circuitry. In one exemplary embodiment of the invention, a 3T pixel arrangement is used. In another exemplary embodiment, a 4T arrangement is used. Additional exemplary embodiments provide differential column readout circuitry that can be used with any two signal sources. | 07-16-2009 |
20090180017 | IMAGE SENSORS WITH PIXEL RESET - Techniques for use with image sensors include transferring a signal level from an active sensor pixel to a readout circuit, performing a flushed reset of the pixel, and isolating the pixel from the readout circuit during resetting of the pixel. | 07-16-2009 |
20090190017 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus includes a pixel array including a light-shielded area where light-shielded pixels are arranged, and an effective area where non-light-shielded pixels are arranged. Each of the light-shielded pixels includes a first photoelectric conversion unit, a first charge-voltage converter which converts charges generated in the first photoelectric conversion unit into a voltage, and a first amplification transistor functioning as a MOS transistor which receives, at the gate, the voltage converted by the first charge-voltage converter. Each of the non-light-shielded pixels includes a second photoelectric conversion unit, a second charge-voltage converter which converts charges generated in the second photoelectric conversion unit into a voltage, and a second amplification transistor functioning as a MOS transistor which receives, at the gate, the voltage converted by the second charge-voltage converter. The gate capacitance of the first amplification transistor is larger than that of the second amplification transistor. | 07-30-2009 |
20090190018 | SOLID-STATE IMAGE SENSING DEVICE, METHOD FOR READING SIGNAL OF SOLID-STATE IMAGE SENSING DEVICE, AND IMAGE PICKUP APPARATUS - An image sensor includes a pixel array having vertical signal lines, each interconnected to one of columns of the pixel array, and a column processor including a unit readout circuit provided for each of sets of a predetermined number of columns. The unit readout circuit includes input switches, each connected to a corresponding one of the vertical signal lines and being sequentially turned on and off, an input capacitor having one end commonly connected to the input switches, a reference switch for selectively providing a reference voltage to the input capacitor, an operational amplifier connected to the other end of the input capacitor, a reset switch for selectively providing a short-circuit between input and output ends of the operational amplifier, and a feedback circuit provided for each of the columns and including a feedback switch and a feedback capacitor connected in series between the two ends of the operational amplifier. | 07-30-2009 |
20090190019 | Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device - A plural line CMOS sensor array device is provided with sensor cells arranged in a matrix of coordinate-wise rows and columns. Each cell comprises a photosensitive area, an output node, and a transfer gate for selectively interconnecting the photosensitive area and the output node. Along at least a first coordinate direction adjacent cells are functionally configured as mutually mirror-symmetric structures in that their proximate output nodes are facing each other and are arranged for separately feeding a respective output channel. | 07-30-2009 |
20090190020 | IMAGER APPARATUS, DRIVING METHOD, AND CAMERA - In an XY address type solid-state imager apparatus comprising a solid-state imager having a plurality of pixels two-dimensionally arranged, and horizontal and vertical scanning circuits to read signals of the pixels, the scanning circuits each have a progressive scanning circuit to progressively read pixel signals by a first scanning control signal, and an interlace scanning circuit to read pixel signals with an interlaced manner by a second scanning control signal different from the first scanning control signal, and arbitrarily carries out combining of progressive reading and interlace reading in one frame in accordance with a combination of the respective scanning control signals, and reads pixel signals. | 07-30-2009 |
20090190021 | Solid-state Image Pickup Device Having Analog-Digital Converters Configured To Sum Values Of Multiple Pixels In The Array And Method For Driving The Same - A CMOS image sensor includes column-parallel ADCs. Each of the ADCs includes a comparator and an up/down counter. With this configuration, digital values of pixels in a plurality of rows can be added without using additional circuits, such as an adder and a line memory device, and the frame rate can be increased while maintaining constant sensitivity. | 07-30-2009 |
20090195681 | Sampling and Readout of an Image Sensor Having a Sparse Color Filter Array Pattern - A CMOS image sensor or other type of image sensor comprises an array of pixels arranged in rows and columns, with the columns being separated into groups each comprising two or more columns that share a common output. The image sensor further comprises sampling and readout circuitry that includes, for each group of columns in the pixel array, a corresponding set of two or more column circuits. The sampling and readout circuitry is configured to sample the common output for each group of columns independently into one of the column circuits associated with that group, and to read out the common output for each group of columns as previously sampled into another of the column circuits associated with that group. The image sensor may be implemented in a digital camera or other type of image capture device. | 08-06-2009 |
20090195682 | Counter array and image sensor including the same - A counter array and an image sensor including the same may be provided. The counter array may include a controller and a plurality of counter units. The controller may output an operation control signal and a direction indication signal. The counter units hold previous output values or may perform a counting operation in response to the operation control signal and may perform an up-count operation or a down-count operation in response to the direction indication signal when performing the counting operation. | 08-06-2009 |
20090195683 | DRIVE UNIT FOR IMAGE SENSOR, AND DRIVE METHOD FOR IMAGING DEVICE - A drive unit for an image sensor of the present invention comprises, for horizontal scanning, a drive section performing addition and readout of a first FD (floating diffusion) shared by two pixels of the same color that are adjacent in a diagonal direction by simultaneously transferring electrical charge of the two pixels of the same color, and for a second FD shared by two pixels of different colors that are adjacent in a diagonal direction, transferring and reading out electrical charge of a pixel of one color among the two pixels of different colors. | 08-06-2009 |
20090201405 | SOLID-STATE IMAGING DEVICE - An imaging apparatus is provided. The apparatus generally comprises an array and storage elements. The array includes photosensitive cells that are arranged in a plurality of columns and a plurality of rows such that each column includes a set of photosensitive cell pairs that have a shared region with a share floating diffusion region and a shared selection transistor. Also, the location of each shared region of each column is shifted by one row in each adjacent column. | 08-13-2009 |
20090201406 | SOLID STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - The invention is to reduce a color mixing resulting from influences of adjacent pixels. The invention provides a solid-state image pickup apparatus including plural pixels each including a PN junction area constituting a photoelectric conversion area, a floating diffusion area for holding a charge outputted from the PN junction area, an amplifying transistor for amplifying the charge in the floating diffusion area, and a wiring for connecting at least the floating diffusion area, a gate electrode of the amplifying transistor and a resetting MOS transistor, and a signal output line for outputting signals from the amplifying transistors, the apparatus including shield lines between the wiring of one pixel or the floating diffusion area and the wiring of one pixel and the signal output line of another adjacent pixel. | 08-13-2009 |
20090201407 | VARIABLE PIXEL CLOCK ELECTRONIC SHUTTER CONTROL - CMOS image sensor with a rolling shutter that uses two separate clocks. One of the clocks is used during normal operation. When timing is changed, the other clock is started and used during an interim period to avoid distortion in the image. After that interim period, the new clock timing is coupled to the original clock circuit. | 08-13-2009 |
20090207291 | Solid-state imaging device, camera, and electronic device - Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings. | 08-20-2009 |
20090207292 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid state imaging apparatus of less fixed pattern noises and less shading comprises an imaging area wherein a plurality of pixel circuits are arranged in two dimensionally, and each of the pixel circuits includes a plurality of photoelectric conversion elements each for generating an electric charge by a photoelectric conversion and for accumulating the electric charge, a single floating diffusion portion for accumulating the charge, a plurality of transfer switches for transferring the electric charges respectively from the plurality of photoelectric conversion elements to the single floating diffusion portion and an amplifying transistor for amplifying a voltage corresponding to the electric charge accumulated by the floating diffusion portion, wherein the plurality of transfer switches transfers the electric charges from the plurality of photoelectric conversion elements sequentially to the floating diffusion portion while maintaining the amplifying transistors at the activation state. | 08-20-2009 |
20090207293 | IMAGE SENSING APPARATUS, IMAGE SENSING APPARATUS CONTROL METHOD, AND IMAGING SYSTEM - An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line. | 08-20-2009 |
20090207294 | METHOD AND APPARATUS FOR IMPROVING SENSITIVITY IN VERTICAL COLOR CMOS IMAGE SENSORS - The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented. | 08-20-2009 |
20090213258 | Imaging Array with Improved Dynamic Range - An image sensor and a method for using the same are disclosed. The image sensor includes an array of pixel sensors, a signal digitizing circuit, and a digitizing controller. The array of pixel sensors includes a plurality of pixel sensors. Each pixel sensor includes a photodetector, a charge conversion circuit, and a gate transistor. The charge conversion circuit generates a voltage signal that is related to a charge on the photodiode, and the gate transistor couples the voltage signal to a bit line in response to a first signal. The signal digitizing circuit converts the voltage signal to a plurality of output digital values. Each output digital value has a different level of digitization noise. One of the output digital values is selected for output in response to an output selection signal that is generated by the digitizing controller. | 08-27-2009 |
20090213259 | Correlation Double Sampling Circuit for Image Sensor - A correlation double sampling (CDS) circuit for sampling a reset signal and a light-sensing signal outputted from a pixel column of an image sensor includes two sampling capacitors and four transistor switches. The operation of the CDS circuit needs not change polarities of the two sampling capacitors, such that MOS capacitors that have higher capacitance per unit area can be utilized for realizing the two sampling capacitors for reducing thermal noises induced when performing sampling. Additionally, fewer transistors are used in the CDS circuit, and thus charge injection noises caused by switching the transistor switches can also be reduced. | 08-27-2009 |
20090213260 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 08-27-2009 |
20090219426 | Embedded cache memory in image sensors - An embodiment of an embedded cache memory in an image sensor comprises a memory cell array wherein the memory cells are substantially isolated from laterally adjacent memory. The memory cell array includes a plurality of memory cells. Each of the memory cells is formed in a standard CMOS image sensor process without the need for SOI processes. Each cell includes first and second n-type and p-type regions arranged around a vertically integrated gate. Data is written to a cell by causing carriers to accumulate in the body of the device through carrier generation mechanisms that may include impact ionization, band-to-band tunneling and/or channel-initiated secondary hot electrons. | 09-03-2009 |
20090219427 | IMAGE SENSOR AND IMAGE DATA PROCESSING METHOD - An image sensor and a method for processing image data, can reduce a large proportion of data signals corresponding to high illumination and a small proportion of data signals corresponding to low illumination in order to generate an image just like the original, by adjusting the reset sampling period pertaining to the data signals outputted from a unit pixel. The image sensor includes a first switch which is operated by a reset sampling signal for sampling reset voltage when a voltage drop in an image data signal occurs, in which the image data signal is applied from a picture element part, a first capacitor for storing the reset voltage applied from the first switch, a second switch which is operated by a data sampling signal for sampling data voltage after completion of the voltage drop in the image data signal, a second capacitor for storing the data voltage from the second switch, and an image data processing circuit equipped with a comparator for comparing the reset voltage with the data voltage. | 09-03-2009 |
20090219428 | SOLID STATE IMAGE CAPTURING APPARATUS AND CAMERA APPARATUS - A solid state image capturing apparatus is disclosed. A pixel array section has unit pixels containing photoelectric conversion elements, the unit pixels being two-dimensionally arranged in a matrix, and column signal wires correspondingly to columns of the matrix of the unit pixels. A line scanning section selectively controls lines of the matrix of the unit pixels of the pixel array section. An analog-to-digital conversion section converts an analog signal outputted from unit pixels of a line of the matrix of the unit pixels selected by the line scanning section through a corresponding column signal line to a digital signal. A conversion clock supply section selectively generates a conversion clock having a first clock period or a second clock period. An addition section adds unit pixel digital signals converted in the analog-to-digital conversion section by the conversion clocks having the first clock period and the second clock period, respectively. | 09-03-2009 |
20090219429 | SOLID-STATE IMAGING APPARATUS, METHOD OF DRIVING SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - There is provided a solid-state imaging apparatus which, while shortening the reading time period, can prevent noise from being mixed. There are included: multiple pixels ( | 09-03-2009 |
20090225210 | IMAGING DEVICE - A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr | 09-10-2009 |
20090237540 | Imager method and apparatus having combined gate signals - An imaging device and method for operating the device. The device comprises a pixel array having a plurality of pixels arranged in rows and columns and a plurality of readout circuits for the pixels. A reset circuit in one readout circuit is simultaneously operated with a dual conversion gain select circuit in another readout circuit using a common select line. Alternatively, a row circuit in one readout circuit is simultaneously operated with a dual conversion gain select circuit in another readout circuit using a common select line. | 09-24-2009 |
20090237541 | Method and apparatus providing reduced metal routing in imagers - An imaging device and method for operating the device. The imaging device comprises a pixel array having a plurality of pixels arranged in rows and columns. At least one pixel of the array comprises a photosensor and a first reset circuit responsive to a first reset control signal for resetting the photosensor. A first terminal of the first reset circuit is coupled to the photosensor and a second terminal of the first reset circuit is configured to receive a first resetting voltage from a control line. | 09-24-2009 |
20090237542 | Image Sensor Circuit - An image sensor circuit comprises | 09-24-2009 |
20090237543 | SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes a first antireflection coating film formed on a light-receiving surface of a first photoelectric conversion element and a second antireflection coating film formed on a light-receiving surface of a second photoelectric conversion element. A total length of first photoelectric conversion element facing portions of gate lines adjacent to the first photoelectric conversion element is shorter than a total length of second photoelectric conversion element facing portions of gate lines adjacent to the second photoelectric conversion element. An area of the first antireflection coating film is larger than that of the second antireflection coating film. | 09-24-2009 |
20090237544 | IMAGE PICKUP APPARATUS - There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor. | 09-24-2009 |
20090237545 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF - An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal. | 09-24-2009 |
20090244344 | SYSTEMS, METHODS, AND DEVICES FOR PREVENTING SHOOT-THROUGH CURRENT WITHIN AND BETWEEN SIGNAL LINE DRIVERS OF SEMICONDUCTOR DEVICES - An imaging device driver for transmitting a signal onto a signal line for controlling transistors of a pixel row. The device includes a controller and associated circuitry for reducing shoot-through current within and between row driver circuits for driving the signal line. The controller reduces shoot-through current by preventing concurrent transmission of high and low signal outputs to the signal line by respective high and low voltage sources of the same or different row driver circuits. | 10-01-2009 |
20090244345 | CMOS image sensor and driving method thereof - A CMOS image sensor is provided. The CMOS image sensor includes a photodiode receiving light and generating photocharges, a transfer transistor connected to the photodiode and transferring the photocharges, a floating diffusion accumulating the photocharges transferred from the transfer transistor, a reset transistor discharging the photocharges accumulated in the floating diffusion, and a merge gate transistor controlling capacitance of the floating diffusion. The CMOS image sensor may obtain a wide dynamic range signal without an increase in size of a pixel. | 10-01-2009 |
20090244346 | IMAGE SENSOR AND DRIVING METHOD THEREFOR - This disclosure concerns an image sensor including: an imaging area; row selection lines; and column signal lines, wherein a pixel includes: a photodiode; a capacitor connected to the photodiode at a first node; a reset transistor connected between the first node and a first power supply; a comparator comparing the potential of the first node with a reference voltage, and outputting a result to a gate of the reset transistor; a counter connected to the comparator, counting an inversion count of an output signal from the comparator, and outputting a digital value according to the inversion count, the output signal being generated from the comparator when the potential of the first node reaches the potential of the first power supply; and a selection transistor connected between the counter and one of the plurality of column signal lines, and having a gate connected to one of the row selection lines. | 10-01-2009 |
20090244347 | IMAGE SENSOR WITH AN IMPROVED SENSITIVITY - An image sensor having a surface intended to be illuminated and pixels, each pixel including a photosensitive area formed in an active area of the substrate, at least one first pixel including a first microlens located on the surface, the sensor including at least one second pixel including a transparent portion forming a pedestal located at least partly on the surface and a second microlens at least partially covering the pedestal. | 10-01-2009 |
20090244348 | METHOD AND APPARATUS PROVIDING PIXEL ARRAY HAVING AUTOMATIC LIGHT CONTROL PIXELS AND IMAGE CAPTURE PIXELS - A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels. | 10-01-2009 |
20090251579 | Image Sensor Circuit - An image sensor circuit includes a CMOS image sensor with light sensitive pixels arranged in rows and columns and a readout circuitry. The readout circuitry includes storage means with a CDS stage for storing signals read out from the pixels at two different time instants between two subsequent reset phases and an analogue-to-digital converter, wherein the CDS stage comprises a subtracting means for subtracting the stored signals from each other and wherein the result of the subtraction is fed to the analogue-to-digital converter as a differential signal. | 10-08-2009 |
20090251580 | Circuit and Method for Reading Out and Resetting Pixels of an Image Sensor - A circuit for resetting and reading out a pixel cell of a CMOS image sensor is proposed. The circuit allows for reading out the pixel cell at least two times during a main integration interval, thereby generating at least two pixel signals. The circuit further comprises means for combining the at least two pixel signals to an output signal. The means for combining are operable to combine the at least two pixel signals weighted in dependence on a saturation level of the pixel cell. A method for controlling the circuit for reading out the image sensor is also proposed. | 10-08-2009 |
20090251581 | Sub-pixels, unit pixels, image sensors and methods of operating the same - An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region. | 10-08-2009 |
20090251582 | SOLID STATE IMAGING DEVICE, DRIVING METHOD OF THE SOLID STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid state imaging device includes: multiple unit pixels including a photoelectric converter generating electrical charge in accordance with incident light quantity and accumulating the charge, a first transfer gate transferring the accumulated charge, a charge holding region holding the transferred charge, a second transfer gate transferring the held charge, and a floating diffusion region converting the transferred charge into voltage; an intermediate charge transfer unit transferring, to the charge holding region, a charge exceeding a predetermined charge amount as a first signal charge; and a pixel driving unit setting the first transfer gate to a non-conducting state, set the second transfer gate to a conducting state, transfer the first signal charge to the floating diffusion region, set the second transfer gate to a non-conducting state, set the first transfer gate to a conducting state, and transfer the accumulated charge to the charge holding region as a second signal charge. | 10-08-2009 |
20090251583 | IMAGE SENSOR FOR REMOVING HORIZONTAL NOISE - Disclosed herein is an image sensor for removing a horizontal noise. The image sensor includes a pixel array including a plurality of unit pixels located at every row or column; an analog bus located at every row or column, for transferring output signals of the pixel array; and a readout circuit for reading the output signals of the pixel array loaded on the analog bus, wherein the readout circuit includes: a plurality of first transistors having a drain connected to the column analog bus and a source connected to a supply voltage; and a second transistor having a drain connected to a gate of the second transistor and gates of the first transistors, and a source connected to the supply voltage, wherein, a size of the second transistor is larger than a size of the first transistor. | 10-08-2009 |
20090256940 | Method and apparatus providing dynamic boosted control signal for a pixel - A method and apparatus that generates boosted control signals for a transistor in a target pixel circuit. At least one modified pixel circuit is provided with a transistor layout that approximates a layout of the target pixel circuit. In the modified pixel circuit, one transistor that corresponds to a transistor in the target pixel that is to be controlled provides a voltage used to generate a control signal for the corresponding transistor in the target pixel. | 10-15-2009 |
20090256941 | Image sensor with sensing transistor having two gates and method of operating the same - Provided is an image sensor including a sensing transistor having two gates and a method of operating the image sensor. The image sensor may include a photoelectric conversion device, a sensing transistor which may have a first gate connected to a floating diffusion region in which charges generated from the photoelectric conversion region are stored and a second gate separated from the first gate, a reset transistor that may be connected to the floating diffusion region and may reset a potential of the floating diffusion region, a control voltage source that may supply a control applied to the second gate, and a column output line which may be connected to a source of the sensing transistor. | 10-15-2009 |
20090256942 | Simultaneous readout of CMOS APS imagers - A new method of reading an imager is achieved. The method comprises providing an imager array comprising n rows and m columns where a pair of rows can be read during a single row access time. A first image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows of the imager array. The reading begins at a first row, and the reading stops when less than three rows are unread. Thereafter pixel values of the next row are read and not stored. Thereafter pixel values of the first row of the imager array are read and not stored. A second image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows. The reading begins at the second row, the reading stops when less than two rows are unread. | 10-15-2009 |
20090273698 | Image-sensing chip package module for reducing its whole thickness - An image-sensing chip package module for reducing its whole thickness can fix an image-sensing unit under a substrate unit via an adhesive body disposed between the substrate unit and the image-sensing unit, so that the image-sensing unit can be firmly fixed under a bottom area (the bottom area is a receiving space formed by using a plurality of first conductive protruding bodies to support the substrate unit up relative to a main PCB) of the substrate unit. In other words, the image-sensing unit is received in the receiving space formed by using the first conductive protruding bodies to support the substrate unit up relative to the main PCB, so that the whole thickness of the image-sensing chip package module can be reduced. Therefore, it is easy for designer to integrate the image-sensing chip package module into any portable electronic devices such as mobile phone or notebook. | 11-05-2009 |
20090278969 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM - A solid-state image pickup device and a camera system in which: (1) counters are organized into a counter group and a memory group on a column-by-column basis; (2) in each column, the individual counters are cascade-connected between individual bits; (3) switches are provided at bit output portions of the individual counters; (4) connecting sides of the individual switches are commonly connected to a column-signal transfer line, and output sides of the switches are shared with the other individual bits; (5) inputs of memories (latch circuits), which store digital data for horizontal transfer, share the column-signal transfer line; and (6) outputs of the memories corresponding to the individual bits are connected via switches to data transfer signal lines wired so as to be orthogonal to the column-signal transfer line. | 11-12-2009 |
20090284633 | IMAGE SENSOR, DATA OUTPUT METHOD, IMAGE PICKUP DEVICE, AND CAMERA - An image sensor includes: a pixel array block configured to get image data by photoelectrically converting light; a register group configured to store information associated with processing of the image sensor; and a parallel interface configured to output the image data to outside in parallel output; wherein the parallel interface further outputs a register value group stored in the register group to outside when the image data is not being outputted to outside. | 11-19-2009 |
20090284634 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, comprising: a pixel section including a matrix having a plurality of pixels, each pixel including photoelectric conversion means, a storage section, transfer means, amplification means, and reset means, on a column basis, an output signal line whose one end is coupled to a constant-current source, and in which the area carrying thereon the matrix of the pixels includes a light-shielding area, a read area, and a transition area disposed between the light-shielding area and the read area; and control means for performing control to keep the potential difference between the one end and the other end of the constant-current source in a range with which the constant-current source can be operated by using the pixel signal to be output to the output signal line at the time of resetting the pixel of the transition area, when outputting the pixel signal corresponding to the incident light from the pixel of the read area. | 11-19-2009 |
20090290058 | SOLID-STATE IMAGING DEVICE - In a solid-state imaging device, provided is a solid-state imaging device in which a first gate insulation film | 11-26-2009 |
20090290059 | CONNECTION/SEPARATION ELEMENT IN PHOTOELECTRIC CONVERTER PORTION, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - Suppressing a fall in sensitivity upon shooting without causing similar effect as a pixel defect in spite of being able to perform focal point detection. When a gate electrode | 11-26-2009 |
20090295965 | METHOD AND CIRCUIT FOR DRIVING ACTIVE PIXELS IN A CMOS IMAGER DEVICE - One embodiment of the present invention describes a pixel circuit that comprises at least one photodiode, a first transistor coupled between the photodiode and a floating diffusion node, a second transistor coupled between the floating diffusion node and a modifiable driving voltage signal, and a third transistor having a gate coupled to the floating diffusion node, a source coupled to a signal output, and a drain coupled to a constant voltage. Another embodiment of the present invention provides a method for driving the pixel circuit, which comprises resetting the photodiode and the floating diffusion node, exposing the photodiode to light to accumulate charges, selecting the pixel circuit by switching the driving voltage signal from a first voltage level to a second voltage level, retrieving a reference voltage from the selected pixel circuit, and retrieving an image signal from the selected pixel circuit corresponding to the accumulated charges. | 12-03-2009 |
20090295966 | SOLID-STATE IMAGING DEVICE AND CAMERA - A column amplifier includes: a load transistor having a gate for receiving a fixed potential; a drive unit configured to drive a current having a current value in accordance with a potential of the input point; a reset transistor configured to turn ON when the pixel signal is at a reset potential and turn OFF when the pixel signal is at a read potential; and a clip transistor configured to turn OFF when a potential of the output point is smaller than a predetermined potential and turn ON when the potential of the output point is the predetermined potential or greater, and the drive unit has a circuit structure configured to selectively apply first and second current driving abilities. | 12-03-2009 |
20090295967 | IMAGING APPARATUS - A plurality of pixels arranged into two dimensions; a differential processing means for effecting a differential processing between a reset level of the pixel and a signal level changing correspondingly to a light signal incident on the pixel so as to produce an imaging signal of the pixel; a reset level detection means for detecting and outputting a result as to whether the reset level is within a predetermined range or outside the predetermined range; an extraction means for extracting pixels to be corrected based on a result of the differential processing by the differential processing means and the result of detection by the reset level detection means; and a correction means for replacing the result of the differential processing by the differential processing means of the pixels to be corrected extracted by the extraction means with an imaging signal corresponding to a saturation level. | 12-03-2009 |
20090295968 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having pixels two-dimensionally arranged into rows and columns each pixel containing a photoelectric conversion means, an amplification means for amplifying and outputting as pixel signal a signal electric charge of the photoelectric conversion means, and a reset means for resetting signal electric charges accumulated at the amplification means; a vertical scanning section for selecting a row to be read out of the pixel section; a vertical signal line provided column by column for outputting the signal from the pixel section; and a sample-and-hold type bias section connected to the vertical signal line containing at least a hold means for setting an electric current flowing into the amplification means. The sample-and-hold type bias section causes to generate an electric current corresponding to a voltage set at the hold means when signal electric charges accumulated at the photoelectric conversion means is read out from the amplification means. | 12-03-2009 |
20090295969 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, comprising, a pixel section including a two-dimensional matrix of a plurality of pixels each provided with a photoelectric conversion section, and an amplifier section that amplifies an output of the photoelectric conversion section and outputs a pixel signal, a column signal line provided on a column basis in the pixel section to receive the pixel signal outputted from the amplification section of each of the pixels, a column amplification section in which a first input terminal is coupled with an end of each of the column signal lines via a first switch device, and a second input terminal is coupled via a second switch device with a load section that is in charge of setting an amplification rate for use to amplify the pixel signal, a third switch device that couples together the load section and others in the plurality of various columns, and a control section that controls coupling and decoupling by the first, second, and third switch devices. | 12-03-2009 |
20090295970 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into rows and columns each pixel containing at least a photoelectric conversion device for converting an incident light into signal electric charges, a transfer device for transferring the signal electric charges generated at the photoelectric conversion device, and an amplification device for amplifying the transferred signal electric charges; vertical signal lines provided in common for each column to read outputs of the pixels; constant current supplies respectively connected to the vertical signal lines; an amplification section for amplifying an image signal obtained from the pixels; a clip section for clipping the vertical signal line so that it does not fall below a predetermined voltage in a read period for outputting the signal electric charges generated at the photoelectric conversion device onto the vertical signal line; and a control section for changing a clip level of the clip section in accordance with setting of an amplification factor at the amplification section. | 12-03-2009 |
20090303366 | INTERLEVEL CONDUCTIVE LIGHT SHIELD - A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via extends from a top surface of the second dielectric layer to a bottom surface of the first dielectric layer is formed in the metal interconnect structure. The conductive light shield may be formed within a contact level between a top surface of a semiconductor substrate and a first metal line level, or may be formed in any metal interconnect via level between two metal line levels. The inventive CMOS image sensor pixel enables reduction of noise in the signal stored in the floating drain. | 12-10-2009 |
20090303367 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having two-dimensionally arranged pixels each containing a photoelectric conversion device for converting a light signal into a signal electric charge and accumulating the signal electric charge, an amplification means for amplifying and outputting as a pixel signal the signal electric charges accumulated at the photoelectric conversion device, a transfer means for transferring the accumulated signal electric charges to the amplification means, and a reset means for resetting the signal electric charges; a vertical scanning section for outputting a vertical scanning signal to drive/control the pixel section row by row; and a vertical selecting section for generating a row transfer signal in accordance with the vertical scanning signal to drive the transfer means and for generating a row reset signal having a falling edge delayed by a predetermined amount from the row transfer signal to drive the reset means. | 12-10-2009 |
20090303368 | IMAGE SENSOR WITH ON-CHIP SEMI-COLUMN-PARALLEL PIPELINE ADCS - An imaging device with a semi-column-parallel pipeline analog-to-digital converter architecture. The semi-column-parallel pipeline architecture allows multiple column output lines to share an analog-to-digital converter. Analog-to-digital conversions are performed in a pipelined manner to reduce the conversion time, which results in shorter row times and increased frames rate and data throughput. The architecture also enhances the pitch of the analog-to-digital converters, which allows high performance, high resolution analog-to-digital converters to be used. As such, semi-column-parallel pipeline architecture overcomes the shortcomings of the typical serial and column-parallel architectures. | 12-10-2009 |
20090303369 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA - The number of necessary sampling and holding capacitors is reduced. A solid-state image pickup device has signal lines to which photoreceiving elements are connected, a clamp circuit that has clamp capacitors in which one terminal is connected to the signal lines and the other terminals are short-circuited, has a switch for applying a reference voltage to the other terminals by the clamping operation, and adds signals from the plurality of photoreceiving elements provided in the row direction along with the clamping operation, adding means (switches and capacitors) which is connected to the other terminals of the clamp capacitors, adds addition signals of the respective photoreceiving element rows outputted from the other terminals and adds the signals of the plurality of photoreceiving elements provided in the column direction; an amplifier connected to the adding means; a switch for resetting the input side of the amplifier; and circuit means (switches and capacitors) for outputting an offset of the amplifier and the signal from the amplifier. | 12-10-2009 |
20090310003 | IMAGE SENSOR - An image sensor for an electronic imaging device includes an array of pixel detectors. Each pixel detector includes a photosensor ( | 12-17-2009 |
20090310004 | WIDE APERTURE IMAGE SENSOR PIXEL - An image sensor includes a unit cell of four pixels. The unit cell includes four photosensitive regions that collect charge in response to light; four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism; three control wires in which a first control wire controls two of the transfer transistors and a second control wire controls one of the transfer transistors and a third control wire controls one of the transfer transistors; an amplifier connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level. | 12-17-2009 |
20090310005 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into two dimensions for converting an incident light into a signal electric charge and for outputting an electrical signal corresponding to the signal electric charge; vertical signal lines for reading the signals of the pixel section column by column; a horizontal signal line for reading the signals through switches from the vertical signal lines; and a variable amplification section for reading the signal from the horizontal signal line with amplifying it by a predetermined amplification factor, and further includes a control section for effecting a control so that a signal level on the horizontal signal line does not exceed a predetermined limit level when signals are read out from the vertical signal lines to the horizontal signal line. | 12-17-2009 |
20090316031 | CMOS solid state imaging device - Each pixel of a pixel matrix portion includes a photo diode, a floating diffusion, a transfer transistor for transferring a storage charge of the photo diode to the floating diffusion in response to a transfer pulse, a reset transistor for resetting the floating diffusion in response to a reset pulse, and a reading circuit for reading a voltage of the floating diffusion to a column signal line in response to a row selection pulse. A timing generator repeats a counting of subframes, and switches a frame consisting of the subframes in designated number. A vertical scanning circuit controls whether or not the reset pulse, the transfer pulse, and the row selection pulse should be fed to respective rows of the pixel matrix portion every subframe, and controls timings of the reset pulse and the transfer pulse in each subframe. | 12-24-2009 |
20090316032 | IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR - An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film. | 12-24-2009 |
20090316033 | IMAGE SENSING APPARATUS - An image sensing apparatus comprises: a pixel array; a driving unit; a readout unit which, when performing still image shooting parallel to movie shooting, reads out, in each of successive frame periods, first signals from a first pixel group, and reads out, over the successive frame periods, second signals of a first frame period from pixels of a second pixel group that are different from each other between the successive frame periods; and a generation unit which generates an image signal for a movie of one frame in each of the successive frame periods from the first signals read out in each of the successive frame periods, and also generates an image signal for a still image of one frame in the first frame period by composing the first signals read out in the first frame period and the second signals read out over the successive frame periods. | 12-24-2009 |
20090316034 | SOLID STATE IMAGE SENSING DEVICE - A column A/D converter includes two column A/D converting elements. Each of the column A/D converting elements is operable to divide a pixel signal read out from a pixel array into two blocks i.e. an upper block constituted of upper two bit data, and a lower block constituted of lower two bit data, and sequentially perform A/D conversion with respect to the blocks in the unit of one horizontal scanning period. A controller causes each of the column A/D converting elements to concurrently perform A/D conversion with respect to different blocks of pixel signals at different rows. | 12-24-2009 |
20090322922 | SOLID-STATE IMAGING APPARATUS - In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in that, when a clamp operation of a pixel output signal is performed in the signal holding unit, a time changing rate of an amplitude of a drive pulse supplied to the selecting unit for turning from a non-conducting state to a conducting state is not larger than a time changing rate of the amplitude of the drive pulse supplied to the selecting unit for turning from the conducting state to the non-conducting state. | 12-31-2009 |
20090322923 | PHOTOELECTRIC APPARATUS, METHOD OF FABRICATING PHOTOELECTRIC APPARATUS, AND IMAGING APPARATUS - A photoelectric apparatus includes a substrate and an array of a plurality of pixels each having at least one photoelectric device including a lower electrode over the substrate, a photoelectric layer over the lower electrode, and an upper electrode over the photoelectric layer, the photoelectric apparatus further includes an electrically conductive partition between adjacent two of the pixels, the conductive partition being electrically connected with the upper electrode and a transparent insulating layer on the upper electrode, and the pixels is individually sealed in by the partition and the transparent insulating layer. | 12-31-2009 |
20090322924 | SOLID-STATE IMAGING DEVICE DRIVING METHOD - Photosensitive cells each includes a photodiode ( | 12-31-2009 |
20090322925 | PROVIDING CURRENT TO COMPENSATE FOR SPURIOUS CURRENT WHILE RECEIVING SIGNALS THROUGH A LINE - Circuits, methods, and systems are disclosed in which a current is provided to compensate for spurious current while receiving signals through a line. For example, the spurious current can be sensed and the compensating current can be approximately equal to the sensed spurious current. The spurious current could include photocurrent from a bright light, and the compensating current can prevent bright light effects. | 12-31-2009 |
20100002115 | Method for Fabricating Large Photo-Diode Arrays - A photodetector array and method for making the same are disclosed. The photodetector array includes a two-dimensional array of pixels and a controller. Each pixel includes a photodetector and a readout circuit, the readout circuit coupling that pixel to a corresponding bit line when a readout signal is received on a corresponding row line. The controller generates the row selection commands and processes signals on the bit lines. The photodetector array is divided into a plurality of sub-chips fabricated on a semiconductor substrate and having a plurality of metal conductors overlying the substrate. The sub-chips include a plurality of slave sub-chips, each slave sub-chip includes a row decode circuit, and a plurality of the rows of pixels, the row decode circuit in one of the slave-sub-chips providing the readout signals on row lines in that sub-chip in response to one of the row selection commands. | 01-07-2010 |
20100002116 | Apparatus and method for image recording - Apparatuses and methods which involve reading out an image sensor comprising an array of light-sensitive sensor elements are disclosed. In an embodiment, the light-sensitive sensor elements are grouped into a plurality of consecutive sensor element groups, and in an embodiment reading out the light-sensitive sensor elements is performed groupwise in an at least partially not according to the consecutive order of the groups. | 01-07-2010 |
20100002117 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device in which at least a first metal wiring layer and a second metal wiring layer are arranged on a semiconductor substrate in an order named, the semiconductor substrate comprises a pixel region where a plurality of pixels are arrayed in a matrix, each pixel including at least a photoelectric conversion portions and an amplification transistor, wherein the second metal wiring layer includes power supply lines each configured to supply a power supply voltage to the amplification transistors of at least two pixel columns, and wherein the amplification transistor of a pixel column having no power supply line receives the power supply voltage from the power supply line via the first metal wiring layer. | 01-07-2010 |
20100002118 | DUAL SENSITIVITY IMAGE SENSOR - A system of taking images of different sensitivities at the same time uses both an image sensor, and an auxiliary part to the image sensor. The image sensor element can be a photogate, and the auxiliary part can be the floating diffusion associated with the photogate. Both the photogate and the floating diffusion accumulate charge. Both are sampled at different times. The floating diffusion provides a lower sensitivity amount of charge than the photogate itself. The system can have a photogate and floating diffusion in each pixel along with a select transistor, a reset transistor, and a follower transistor. All of this circuitry can be formed of CMOS for example. The system can also operate in a column/parallel mode, where each column of the photo sensor array can have a column signal processor which samples and holds the reset signal, the floating diffusion signal and the photogate signal. | 01-07-2010 |
20100013972 | PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY - A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors. | 01-21-2010 |
20100013973 | PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY - A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors. | 01-21-2010 |
20100013974 | Remote image processing for wireless communication and personal safety applications - This invention relates to wireless communication products, digital camera phones (or wireless transceiver capable of recording and transmitting digital photos); Global Positioning Satellite (GPS) applications in wireless technologies; handheld wireless safety alarms; or wireless accessories combination thereof It streamlines “Threat Phone: camera phone automation for personal safety” (Inventor: Barrett Gay; patent application Ser. No. 11/068,449; publication no. US-2006-0199609-A1; Sep. 9, 2006). Provisional patent application for “Standalone Image Capturing and Remote Digital Processing for Wireless Personal Safety” was granted to Applicant Barrett Gay, Fairburn, Ga. on Feb. 12, 2007 (USPTO-PPA No. 60/900,925). | 01-21-2010 |
20100013975 | IMAGE SENSOR - This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film. | 01-21-2010 |
20100020216 | DEVICE FOR DETECTING AN IMAGE OF A NONPLANAR SURFACE - An image sensing device for detecting an image of a nonplanar surface includes a plurality of pixels configured to detect the image of the nonplanar surface. The plurality of pixels are associated with a plurality of pixel pitches. The plurality of pixels are positioned to maintain a constant image resolution of the nonplanar surface for the plurality of pixels, based on the plurality of pixel pitches associated with the plurality of pixels. | 01-28-2010 |
20100020217 | SOLID-STATE IMAGING DEVICE AND CAMERA - The solid-state imaging device having pixels that are arranged in rows and columns and convert optical signals to electric signals to output the electric signals as voltage signals includes column signal lines each provided for a corresponding one of the columns and transmitting, in the direction of the columns, voltage signals outputted from the pixels, current sources each provided for and connected to a corresponding one of the column signal lines, column amplification circuits each provided for a corresponding one of the column signal lines and amplifying the voltage signals transmitted through the column signal lines, a current-source ground potential supply line supplying the current sources with ground potential, and a column amplification circuit ground potential supply line supplying the column amplification circuits with ground potential. The current-source ground potential supply line and the column amplification circuit ground potential supply line are interconnected at positions corresponding to the columns. | 01-28-2010 |
20100026865 | IMAGE SENSOR HAVING MULTIPLE SENSING LAYERS - An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry. | 02-04-2010 |
20100026866 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of a MOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of a MOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion. | 02-04-2010 |
20100026867 | SOLID-STATE IMAGE SENSING DEVICE AND IMAGE SIGNAL OUTPUT CIRCUIT - A pixel signal obtained by imaging with a solid-state image sensor element can be output selectably either in n bits or in a bit number of an integral multiple of n in synchronization with an output clock. A clock converting unit ( | 02-04-2010 |
20100026868 | Wide Dynamic Range Image Capturing System Method and Apparatus - An image capture system is presented where the dynamic range of photo imaging devices, such as a still or video camera, is increased by varying sensor exposure time on a pixel-by-pixel basis under digital camera processor control. The systems photo sensors are continuously illuminated without reset over the exposure interval. In addition to being interrogated at the end of the exposure interval, the pixels are also non-destructively interrogated at one or more intermediate times during the interval. At each interrogation, the image capture system determines individually whether the pixels have saturated and if not, the parameter value is recorded; if the pixel has saturated, the previously stored value from the preceding interval is maintained. To produce the final sensor value for the whole exposure interval, the data for pixels that reached the saturation level are adjusted to compensate for their shortened exposure. | 02-04-2010 |
20100033612 | Composite Image Device and Related Portable Electronic device - A composite image device having image capturing, laser pointing, lighting and related functions in one includes a first perspective window, a second perspective window, a third perspective window, an image capturing module, laser source module, a light source module and a switchable light modulating module. The image capturing module captures ambient light through the first perspective window to generate digital image data. The laser source module emits a laser through the second perspective window. The light source module emits illuminating light through the third perspective window. The switchable light modulating module includes at least a light modulating gate and a switching device for moving the at least a light modulating gate to a position relatively parallel to the second or third perspective window to modulate the emitted laser or the emitted illuminating light. | 02-11-2010 |
20100039545 | SOLID-STATE IMAGE-PICKUP DEVICE - Pupil correction is performed on wiring lines with a high flexibility by improving an arrangement structure of wiring layers. An image-pickup region is divided in two, the left and right sides. Regarding wiring lines at the position of a pixel that is arranged on the left side (the −X side) with respect to the center of the image-pickup region, a contact unit | 02-18-2010 |
20100039546 | CMOS PHOTOGATE 3D CAMERA SYSTEM HAVING IMPROVED CHARGE SENSING CELL AND PIXEL GEOMETRY - A photosurface for receiving and registering light from a scene, the photosurface comprising: a first semiconductor region in which electron-hole pairs are generated responsive to light incident on the photosurface; a single, first conductive region substantially overlaying all of the first semiconductor region; at least one second semiconductor region surrounded by the first semiconductor region; a different second conductive region for each second semiconductor region that surrounds the second semiconductor region and is electrically isolated from the first conductive region; wherein when the second conductive region is electrified positive with respect to the first conductive region, electrons generated by light incident on the first semiconductor region are collected in the second semiconductor region. | 02-18-2010 |
20100039547 | PHOTO-SENSOR, MEASUREMENT APPARATUS AND CAMERA SYSTEM - The present invention provides a photo-sensor with a stable current limiting function and pixel reset function. When the incident light quantity of the phototransistor is equal to or less than a predetermined quantity and the base potential of the phototransistor is in a first potential of an operation point in a stationary state, an MOSFET for discharging an electric charge is controlled so as to be turned OFF. In addition, when the incident light quantity of the phototransistor is equal to or more than the predetermined quantity, a MOSFET for detecting an electric current is controlled so as to operate in a saturation region. When the base potential of the phototransistor has changed to a second potential from the first potential, the MOSFET for discharging an electric charge is controlled so as to be turned ON. | 02-18-2010 |
20100045835 | IMAGING DEVICE CHIP SET AND IMAGE PICKUP SYSTEM - An imaging device chip set includes an imaging chip | 02-25-2010 |
20100045836 | Image sensor and image sensing system including the same - An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate. | 02-25-2010 |
20100045837 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state imaging device includes a pixel region and a driving circuit region which are disposed on a semiconductor substrate, the pixel region being configured such that a photoelectric conversion unit and a signal scanning circuit unit are included and a matrix of unit pixels is disposed, and the driving circuit region being configured such that a driving circuit for driving the signal scanning circuit unit is disposed, a first pad which is provided on a peripheral region on the semiconductor substrate on a side of a light receiving surface, the light receiving surface being formed on a substrate surface which is opposite to a substrate surface where the signal scanning circuit unit is formed, and a second pad which is provided on a side where the signal scanning circuit unit is formed, and which is disposed only at a position overlapping the pixel region. | 02-25-2010 |
20100045838 | BOOSTER CIRCUIT, SOLID-STATE IMAGING DEVICE, AND CAMERA SYSTEM - A booster circuit includes: an output terminal; a reference voltage generating section that generates a boosting reference voltage; a charge pump section that boosts the reference voltage and outputs the boosted reference voltage from the output terminal; and an output-terminal voltage holding section that holds the output terminal at a voltage of a high level at a standby time. The charge pump section includes an input node, at least one boosting node, at least one reference node, at least one boosting capacitor, and a plurality of switching transistors that are provided between the input node and the at least one boosting node, between a boosting node at a last stage and the output terminal, between the input node and the reference node, and between a reference potential and a reference node, and are switched on or off by a switch signal. | 02-25-2010 |
20100045839 | IMAGE PICKUP APPARATUS - An image pickup apparatus comprising: a plurality of pixels each including a photoelectric converting element; a plurality of capacitor which receive signals from the plurality of pixels at first terminals; a plurality of clamping switches for setting a second terminal of each of the plurality of capacitor into a predetermined electric potential; a plurality of first storing units for storing signals from the second terminals of the plurality of capacitor; a plurality of second storing units for storing the signals from the second terminals of the plurality of capacitor; a first common output line to which the signals from the plurality of first storing units are sequentially output; a second common output line to which the signals from the plurality of second storing units are sequentially output; and a difference circuit for operating a difference between the signal from the first common output line and the signal from the second common output line. | 02-25-2010 |
20100053399 | Analog-digital converter, analog-digital conversion method, image pickup device, method of driving the same, and camera - An analog-digital converter includes: comparators disposed to correspond to analog signals which are converted into digital signals and configured to compare a voltage value of the analog signal, which is converted into the digital signal, with a voltage value of a predetermined reference signal; counters disposed to correspond to the comparators and configured to count a count value at the time point when the comparison process of the corresponding comparator is finished; and a determiner configured to determine a time point when all the comparators finish their comparison processes. | 03-04-2010 |
20100053400 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region. | 03-04-2010 |
20100060764 | HIGH GAIN READ CIRCUIT FOR 3D INTEGRATED PIXEL - An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect. | 03-11-2010 |
20100060765 | Data bus control scheme for and image sensor and image sensor including the same - A memory system including a plurality of memory cells configured to receive digital signals includes an address decoder, a data bus, and a sense amplifier configured to receive data output from memory cells activated by addresses from the address decoder. The pre-charging the data bus and evaluating previous data by the sense amplifier occurs substantially simultaneously during a first period. The data bus and the sense amplifier are isolated from each other during the first period. | 03-11-2010 |
20100060766 | Solid-state imaging device and camera - A solid-state imaging device includes a pixel array unit in which pixels having photoelectric converting elements configured to accumulate electric signals in accordance with the quantity of received light and detecting units configured to detect the electric signals accumulated using the photoelectric converting elements are arrayed in a matrix and a timing signal generator configured to generate a timing signal with which an electric signal accumulation time period of each of respective pixels constituting the pixel array unit is set to be a time period obtained by adding a time period calculated on the basis of a position where each of the respective pixels constituting the pixel array unit is arranged to a predetermined time period. | 03-11-2010 |
20100060767 | ANALOG-SIGNAL PROCESSING CIRCUIT FOR IMPROVING ACCURACY OF ARITHMETIC MEAN OF SIGNALS - In a first signal conversion circuit, a first electrode of a first capacitor is connected to a first signal line, and a second electrode thereof is connected to a first node. In a second capacitor, a third electrode thereof is connected to a second signal line, and a fourth electrode thereof is connected to a second node. In a first inverting amplifier including a first negative feedback switch, a first input electrode is connected to the first node, and a first output electrode is connected to a third node. In a second inverting amplifier including a second negative feedback switch, a second input electrode is connected to the second node. A first averaging switch is connected between a first node and second node. A second averaging switch is connected between third node and fourth node. | 03-11-2010 |
20100066882 | SOLID-STATE IMAGE CAPTURING ELEMENT AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing element according to the present invention includes a pixel array section, in which a well layer is disposed above a semiconductor substrate or a semiconductor region and a plurality of photoelectric conversion elements for performing a photoelectric conversion on and capturing an image of image light from a subject are arranged in a two dimensional array in the well layer, where a high concentration well layer is disposed between the well layer and the semiconductor substrate or the semiconductor region, the high concentration well layer being a same conductivity type as the well layer and having a higher impurity concentration than that of the well layer. | 03-18-2010 |
20100066883 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device includes plural photosensitive elements | 03-18-2010 |
20100066884 | Imaging method that continuously outputs a signal based on electric charges generated by a selected pixel unit without performing an operation of deselecting the selected pixel unit - An imaging apparatus includes a pixel unit array and a driving unit. Each pixel unit includes a plurality of photoelectric conversion units, a charge-voltage converter common to the plurality of photoelectric conversion units, a plurality of transfer units which transfer electric charges generated by the plurality of photoelectric conversion units to the charge-voltage converter, an output unit which outputs a signal based on the electric charges to a signal line, and a setting unit which sets the electric potential of the charge-voltage converter. Each pixel unit is selected or deselected in accordance with the electric potential set in the charge-voltage converter. The driving unit drives the pixel unit array so that the output unit continuously outputs, to the signal line, the signal based on the electric charges generated by the plurality of photoelectric conversion units in the selected pixel unit without performing an operation of deselecting the selected pixel unit. | 03-18-2010 |
20100073539 | SOLID-STATE IMAGING DEVICE - The solid-state imaging device which includes unit pixels arranged in a matrix pattern, and adds signals from the unit pixels, includes: column signal lines which transmit the signals from the unit pixels in a column direction; and ADCs which perform analog-digital conversion on the signals transmitted through the column signal lines, adds the converted signals, and outputs the added signal. The ADCs determines whether or not each signal from the unit pixels is a defective signal exceeding a predetermined voltage rage: when determined as not a defective signal, holds, as a signal to be added, a signal obtained through the analog-digital conversion of the signal determined as not a defective signal; and when determined as a defective signal, holds, as a signal to be added, a signal that is not a signal obtained through the analog-digital conversion of the defective signal. | 03-25-2010 |
20100073540 | MULTIPLE MICROLENS SYSTEM FOR IMAGE SENSORS OR DISPLAY UNITS - An imager or display system with multiple lenses, which are formed, patterned and shaped over one or more pixels in an imager or display array. The multiple lenses provide for an improved concentration of light being refracted onto a photosensitive area or light diffused from a display pixel. | 03-25-2010 |
20100079646 | Vertical 4-way shared pixel in a single column with internal reset and no row select - A method and apparatus for reducing space and pixel circuit complexity by using a 4-way shared vertically aligned pixels in a same column. The at least four pixels in the pixel circuit share a reset transistor and a source follower transistor, can have a plurality of same colored pixels and a plurality of colors, but do not include a row select transistor. | 04-01-2010 |
20100079647 | SOLID-STATE IMAGE PICKUP DEVICE, SEMICONDUCTOR DEVICE, AND CAMERA SYSTEM - A solid-state image pickup device includes a pixel array including pixels, each having a photoelectric conversion element and a detecting unit detecting an acquired electric signal, arranged in a matrix, a signal line provided for each column of the pixel array and connected to the detecting unit through a switching element, a selection line provided for each row of the pixel array and supplied with a selection pulse causing the switching element to conduct, a resetting unit provided in each pixel constituting the pixel array and applying a predetermined potential to the detecting unit of the pixel, and an output control unit provided in each pixel constituting the pixel array and causing the switching element of the pixel to conduct according to the selection pulse supplied to another selection line connected to another switching element of another pixel belonging to another row. | 04-01-2010 |
20100079648 | DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS - A driving method of a solid-state imaging apparatus including multiple reference level supplying units each arranged correspondingly to a predetermined number of signal holding units, to supply a reference level to an output node of the signal holding unit through the selecting unit, wherein the method includes steps of: performing a clamping operation for sampling and holding the signal in the signal holding unit, by terminating turn ON pulses to be supplied to the selecting units successively in separate timings, one for each one of the selecting units, or one for each group of the selecting units while the reference level is supplied from the reference level supplying unit to the output node; and performing an operation of selecting the signal holding units through the selecting units, by supplying the turn ON pulses successively to the selecting units, to read out the signals successively from the signal holding units selected. | 04-01-2010 |
20100079649 | IMAGE SENSOR SYSTEM WITH SYNCHRONIZED SWITHCED-MODE POWER SUPPLY - The invention relates to an image sensor comprising an integrated circuit chip incorporating a matrix of rows and columns of photosensitive pixels and a read amplifier, the amplifier supplying successive signals representing the lighting of the different pixels of the image, with a pixel reading frequency determined by a system clock. The system is powered by a general power supply voltage and the read amplifier is powered by a stabilized power supply voltage supplied by a DC/DC voltage converter receiving the general power supply voltage. The DC/DC converter comprises a switched-mode power supply that uses a switch to chop a direct current at high frequency and a rectifier to rectify and filter the chopped current. The chopping frequency is the pixel reading frequency, which eliminates certain power supply-related noises that degrade the video signal. | 04-01-2010 |
20100079650 | IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING ELEMENT - In an imaging apparatus equipped with a solid-state imagining element includes: a photoelectric converting portion; a floating gate provided above a semiconductor substrate, for storing thereinto electric charges generated in the photoelectric converting portion; and a writing transistor for injecting the electric charges generated in the photoelectric converting portion into the floating gate, the solid-state imaging element is further comprised of: a control portion for driving a writing transistor in such a manner that injecting of the electric charges generated in the photoelectric converting portion into the floating gate is stopped during an exposing time period, and after the exposing time period has accomplished, the electric charges generated in the photoelectric converting portion during the exposing time period are injected into the floating gate. | 04-01-2010 |
20100079651 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method of manufacturing an image sensor. An image sensor may include a first pixel. A first pixel may include a first photodiode and a first readout circuit. An image sensor may include a second pixel. A second pixel may include a second photodiode and a second readout circuit, which may be disposed at one side of a first pixel. An image sensor may include a different threshold voltage of a first drive transistor relative to a threshold voltage of a second drive transistor. A method of manufacturing an image sensor may include forming a first pixel having a first photodiode and a first readout circuit, and may include forming a second pixel having a second photodiode and a second readout circuit, wherein a threshold voltage of a first drive transistor relative to a threshold voltage of a second drive transistor is different. | 04-01-2010 |
20100085457 | SOLID-STATE IMAGE PICKUP APPARATUS - A plurality of image pickup areas is disposed in a semiconductor substrate so as to be separate from one another. Disposed in each of the image pickup areas are rows and columns of unit pixels, each of which includes a photoelectric conversion part and signal scanning circuit parts. Formed on the image pickup areas of the semiconductor substrate and opposite a interconnect layer formed on the semiconductor substrate are optical image formation lenses used for forming object images. Further, between the image pickup areas on the semiconductor substrate is a driving circuit area in which driving circuits are formed for driving the signal scanning circuit parts. | 04-08-2010 |
20100085458 | Solid-state imaging element, driving method therefor, and camera system - A solid-state imaging element includes a pixel array unit having pixels arranged in a matrix, each pixel including a photoelectric conversion element, and a pixel drive control unit capable of controlling driving of the pixel array unit so as to perform a read or reset access operation of the pixel array unit in accordance with specified address information. The pixel drive control unit is capable of setting a desired region in the pixel array unit as a window region to be accessed. The pixel drive control unit includes a function for performing, concurrently with access to the window region and output processing, read or reset access on at least one adjacent outer row that is adjacent to the window region. | 04-08-2010 |
20100091162 | ACTIVE PIXEL SENOR CIRCUIT - The present invention relates to an active pixel sensor circuit and a method of operating same. In one embodiment, the active pixel sensor circuit includes a reset transistor having a gate, a source and a drain, a silicon rich oxide (SRO) photosensor having an anode and a cathode electrically coupled to the source of the reset transistor, and a readout transistor having a gate electrically coupled to the cathode of the SRO photosensor, a source and a drain. | 04-15-2010 |
20100091163 | Image Sensor Having Enhanced Backside Illumination Quantum Efficiency - A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching. | 04-15-2010 |
20100091164 | DUAL PANEL PIXEL READOUT IN AN IMAGER - An imager having two panels of pixels (i.e., the imager's rows of pixels are split into two panels) that are controllable by separate row decoders. The dual panel architecture allows pipelining of pixel readout and column readout operations to improve the imager's frame rate. The dual panel architecture may use a standard pixel configuration, a shared column and/or a shared row and column configuration. | 04-15-2010 |
20100097510 | IMAGE PICKUP ELEMENT AND CONTROL METHOD THEREFOR, AND CAMERA - An image pickup element includes a plurality of read signal lines; a pixel unit in which a plurality of pixel circuits are arranged in a matrix form, the plurality of pixel circuits in the pixel unit being divided into groups of pixel circuits so that each of the groups is provided in a corresponding one of columns, each of the groups of pixel circuits being connected to a corresponding one of the plurality of read signal lines; and a processing unit configured to process read signals that the plurality of pixel circuits, which are divided into groups, output to the plurality of read signal lines, which are connected to the plurality of pixel circuits. | 04-22-2010 |
20100097511 | HIGH EFFICIENCY CMOS IMAGE SENSOR PIXEL EMPLOYING DYNAMIC VOLTAGE SUPPLY - A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided. | 04-22-2010 |
20100103301 | INCREASING READOUT SPEED IN CMOS APS SENSORS THROUGH BLOCK READOUT - A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications. | 04-29-2010 |
20100103302 | SOLID-STATE IMAGE PICKUP APPARATUS AND SOLID-STATE IMAGE PICKUP METHOD - A solid-state image pickup apparatus comprising a pixel section which comprises a plurality of unit pixels which are arranged in a matrix, and converts an input optical signal to an electric signal, a column circuit which processes the electric signal which is outputted from the pixel section column by column, and a column circuit current controlling section which reduces current of column circuit, whose electric signal is not read out, than current of column circuit whose electric signal is read out, when a first mode which thins out and reads out electric signals of column circuits is set. | 04-29-2010 |
20100110254 | VLN BIASING SCHEME TO ACHIEVE LOW VERTICAL SHADING FOR HIGH-SPEED AND LARGE-FORMAT CMOS IMAGE SENSORS WITH TOP/BOTTOM READOUT SCHEME - A VLN biasing scheme implemented in an image sensor with top/bottom readout. A first and second current sink coupled to the top of a first column of pixels and a second column of pixels respectively. A third and fourth current sink coupled to the bottom of a first column of pixels and a second column of pixels respectively. During column readout, each current sink sinks an equal amount of current. | 05-06-2010 |
20100110255 | Chracteristic value generating circuit and imaging device - The present invention is to provide a characteristic value generating circuit and an imaging device that can generate anticipated variation in the performance of an imaging device due to the individual difference and can easily evaluate the result of correction processing for the variation. A variation generating circuit | 05-06-2010 |
20100110256 | Pixel sensor array and image sensor including the same - Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal. | 05-06-2010 |
20100110257 | SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND DRIVING METHOD OF THE SOLID-STATE IMAGE PICKUP APPARATUS - An apparatus includes a pixel array in which pixels for outputting an analog signal are arranged in a matrix, vertical output lines each of which is connected to pixels in a same column, A/D conversion units, which are individually connected to the vertical output lines, for converting the analog signal into a digital signal, and a constant current supply unit for supplying a constant current to the A/D conversion units. Each of the A/D conversion units includes an integration unit for integrating the constant current, a comparison unit for comparing the integrated constant current with the analog signal and outputting a comparison signal, and a digital signal storage unit for storing a digital signal corresponding to the comparison signal. The integration unit includes an input capacitor for receiving the constant current. The comparison unit is connected to the constant current supply unit via the input capacitor. | 05-06-2010 |
20100110258 | IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode. | 05-06-2010 |
20100123812 | Photoelectric Conversion Circuit and Solid State Imaging Device Including Same - A photoelectric conversion circuit (P | 05-20-2010 |
20100128155 | Image sensors and methods of manufacturing the same - Image sensors and methods of manufacturing image sensors, the image sensors including a plurality of photoelectric conversion units formed within active regions defined in a semiconductor substrate; and a plurality of light guides having structures for guiding light incident from an external source onto the semiconductor substrate and the plurality of photoelectric conversion units, the light guides having different widths. | 05-27-2010 |
20100128156 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion. | 05-27-2010 |
20100128157 | SKIMMED CHARGE CAPTURE AND CHARGE PACKET REMOVAL FOR INCREASED EFFECTIVE PIXEL PHOTOSENSOR FULL WELL CAPACITY - An imaging device having pixels that store charge from a photosensor under at least one storage gate during a sampling period. A driver used to operate the at least one storage gate, estimates how much charge in the pixel exceeds a predetermined limit during a non-destructive pixel sensing operation. A specific voltage is stored on the pixel's floating diffusion region to flag how many times the pixel exceeded the limit. The final pixel signal and the stored information is readout at the end of integration period to create a sum that represents the pixel's final signal value. | 05-27-2010 |
20100134672 | UNIT PIXEL INCLUDING THREE TRANSISTORS AND PIXEL ARRAY INCLUDING THE UNIT PIXELS - Provided is a unit pixel which uses three transistors and a pixel array including the unit pixel. The unit pixel includes a photodiode, a charge passing unit, a reset controller, and a voltage converter. The pixel array has a structure in which a plurality of the unit pixels according to the present invention are two-dimensionally arrayed, and includes one or more reset power supply circuits which output two or more different supply voltages in response to a pixel selection control signal. Parts of a plurality of the unit pixels share a voltage output from the reset power supply circuit. | 06-03-2010 |
20100134673 | SOLID-STATE IMAGE SENSING DEVICE AND IMAGE PICKUP APPARATUS - Each pixel circuit of one type includes a transfer transistor and the like and is individually provided for and arranged in a corresponding pixel. Each pixel circuit of another type includes an amplifying transistor, a floating diffusion, a reset transistor and the like and is commonly provided for pixels of respective rows and arranged outside pixel rows. | 06-03-2010 |
20100134674 | AMPLIFICATION-TYPE CMOS IMAGE SENSOR - Pixels are two-dimensionally arranged into rows and columns in an image sensing region of a solid-state image sensing device, and divided into a plurality of vertical blocks. A vertical signal line is connected to each pixel column. A voltage read out from a pixel is A/D-converted and held in a holding circuit. A vertical block selection circuit outputs a vertical block selection signal in response to a horizontal sync pulse. An intra-block line selection circuit selects one pixel row in one block or simultaneously selects a plurality of pixel rows in one block, in accordance with the selection signal and a signal for setting the number of lines to be selected. A pulse selector circuit supplies a pixel driving pulse signal to a pixel row selected by the intra-block line selection circuit. | 06-03-2010 |
20100141821 | Image Sensor Devices Having Dual-Gated Charge Storage Regions Therein - An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals. | 06-10-2010 |
20100149394 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM USING THE SOLID-STATE IMAGING APPARATUS - It is an object of the present invention to provide a solid-state imaging apparatus that outputs digital signals at high speed. A solid-state imaging apparatus is provided that includes plural analog-to-digital converters that convert analog signals obtained by photoelectric conversion into digital signals, plural digital memories that store the digital signals converted by the analog-to-digital converters, plural block digital output lines that are provided to correspond to blocks of the plural digital memories and to which the digital signals stored in the plural digital memories included in the blocks are output, a common digital output line that outputs the digital signals output from the plural block digital output lines, buffer circuits that buffer the digital signals output from the block digital output lines, and block selecting units that can switch the block digital output lines electrically connected to the common digital output line. | 06-17-2010 |
20100149395 | ACTIVE PIXEL SENSOR WITH A DIAGONAL ACTIVE AREA - An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines. | 06-17-2010 |
20100157125 | CMOS SOLID STATE IMAGING DEVICE - A CMOS solid state imaging device capable of achieving a higher image quality while reducing the size and power consumption and increasing the number of pixels and speeds. The CMOS solid state imaging device includes a light-receiving portion that performs photoelectric conversion according to a quantity of received light, a transfer gate used to read out charges obtained through the photoelectric conversion in the light-receiving portion, and a peripheral transistor in a periphery of the light-receiving portion. A voltage applied to the transfer gate is set higher than a voltage applied to the peripheral transistor. | 06-24-2010 |
20100165165 | METHOD AND DEVICE FOR A CMOS IMAGE SENSOR - A method for determining photocurrents corresponding to a plurality of wavelength ranges. The method includes receiving at least a light by a photodiode within a first wavelength range. The first wavelength range includes a second wavelength range and a third wavelength range. The method provides a first bias voltage to the photodiode and determines a first photocurrent within the first wavelength range, the first photocurrent being associated with the photodiode and the first bias voltage. The method also provides a second bias voltage to the photodiode, different from the first bias voltage, and determines a second photocurrent within the first wavelength range, the second photocurrent being associated with the photodiode and the second bias voltage. The method further includes processing information associated with the first and second photocurrents, and determining at least a third photocurrent corresponding to the second wavelength range and a fourth photocurrent corresponding to the third wavelength range. | 07-01-2010 |
20100177228 | NARROW BANDWITH ILLUMINATION IMAGE PROCESSING SYSTEM AND METHOD - A low power color image capturing system having a power source, the system comprising: a narrow bandwidth illuminator adapted to provide illumination having a peak intensity defining a narrow bandwidth; an image capturing device adapted to capture a raw image from an object illuminated by the narrow bandwidth illuminator; and a processor adapted to control the system and having an algorithm operatable upon the raw image to provide a modified image; wherein the modified image has enhanced color intensities over substantially all visible wavelengths. | 07-15-2010 |
20100177229 | Image Sensing System And Method Utilizing A Mosfet - A unit cell includes a MOSFET and an integration capacitor. The MOSFET includes a source, a drain, and a gate. The drain is coupled to the source, and the MOSFET is operable to store a first portion of an electric charge corresponding to a detected light intensity. The integration capacitor includes a first end and a second end. The first end is coupled to the drain of the MOSFET and the second end is coupled to a ground. The integration capacitor is operable to store a second portion of the electric charge corresponding to the detected light intensity. | 07-15-2010 |
20100177230 | IMAGE SENSOR DRIVING APPARATUS - An image sensor driving apparatus is provided with a plurality of output blocks having the functions of both a binary output block and a ternary output block and, therefore, is adaptable to image sensors with various types of specifications. The image sensor is provided with a plurality of dual-purpose binary/ternary output blocks having the functions of both a binary output block and a ternary output block and is configured to change over between binary operations and ternary operations, according to driving/controlling signals from a timing generator or selection signals from the outside of the apparatus. | 07-15-2010 |
20100177231 | SOLID-STATE IMAGE CAPTURING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing apparatus is manufactured, which has a high sensitivity and high resolution with no color filter or no on-chip microlens required and with no shading generated or no variance in performance between pixel sections. In a solid-state image capturing apparatus | 07-15-2010 |
20100177232 | VOLTAGE BIASING CIRCUIT AND DATA PROCESSING SYSTEM HAVING THE SAME - A voltage biasing circuit includes a metal-oxide-semiconductor (MOS) transistor, a voltage control circuit controlling a voltage between a gate and a source of the MOS transistor to operate the MOS transistor in a sub-threshold range, and a capacitor connected to the MOS transistor. The voltage biasing circuit may further include a voltage buffer connected between the voltage control circuit and the MOS transistor. | 07-15-2010 |
20100182473 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of vertical signal lines that propagate, for respective columns of a pixel array, pixel signals from pixels, a plurality of sample-hold-signal converting circuits provided in a number larger than a number of the vertical signal lines, a plurality of switch circuits that connect one of the vertical signal lines and two or more of the sample-hold-signal converting circuits, and a control circuit that separately switches the switch circuits such that one of the vertical signal lines is connected to one of the sample-hold-signal converting circuits. | 07-22-2010 |
20100182474 | IMAGE CAPTURE DEVICE COMPRISING PIXEL COMBINATION MEANS - An image capture device includes n image sensors arranged to capture images respectively of a same scene according to at least three different colors, each of the sensors comprising a pixel array, each pixel being associated with a MOS transfer transistor, the transfer transistors of n neighboring pixels being associated with a same output; and a read circuit associated with control circuitry for reading separately, the output of each transfer transistor, or cumulatively, the outputs of from two to n neighboring transfer transistors. | 07-22-2010 |
20100182475 | BINOCULAR SYSTEM WITH DIGITAL CAMERA - A viewing module is disclosed, being detachably connected to a digital camera module configured to provide a digital image of a scene. In at least one embodiment, the viewing module includes two oculars in which the digital image provided by the camera module may be viewable, the viewing module being adapted for switching the scene viewable in the oculars between an overview of the scene and a detailed view of the scene, where the detailed view of the scene may be a digital still image of the scene. An advantage with at least one embodiment of the invention is that it is possible to use an already available camera, such as a users compact camera, and attach the viewing module, thereby making it unnecessary for the user of the camera to purchase an additional combined camera an binocular as previously known. Instead, the viewing module according to at least one embodiment of the present invention acts as an accessory to the already available camera module, thus providing additional features to an already available camera module. | 07-22-2010 |
20100188543 | SOLID-STATE IMAGE CAPTURING APPARATUS, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state image capturing apparatus includes: a pixel array unit including two-dimensionally arranged pixels each including a photoelectric conversion unit, a transfer transistor that transfers charges accumulated in the photoelectric conversion unit, and a charge discharging transistor that selectively discharges the charges accumulated in the photoelectric conversion unit; and a driving unit that performs driving for reading signals from each pixel of the pixel array unit, and drives the charge discharging transistor by using a signal for the driving. | 07-29-2010 |
20100188544 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND SIGNAL READING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of pixel portions, each of the pixel portions includes: a semiconductor photoelectric conversion portion for generating holes according to an amount of incident light and storing the generated holes; a semiconductor floating diffusion layer for converting the holes generated in the photoelectric conversion portion into a voltage corresponding to an amount of the generated holes; and a transistor having a gate electrode which is connected to an output of the floating diffusion layer and an electron storage portion which is disposed under the gate electrode and an amount of electrons stored in which varies depending on a voltage applied to the gate electrode, and the solid-state imaging device further includes: a reading circuit as defined herein. | 07-29-2010 |
20100188545 | PMOS PIXEL STRUCTURE WITH LOW CROSS TALK FOR ACTIVE PIXEL IMAGE SENSORS - An image sensor with an image area having a plurality of pixels each having a photodetector of a first conductivity type, the image sensor includes a substrate of the first conductivity type; a first layer of the second conductivity type between the substrate and the photodetectors, spanning the image area and biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk; one or more adjacent active electronic components disposed in the first layer within each pixel; and electronic circuitry disposed in the substrate outside of the image area. | 07-29-2010 |
20100188546 | DUAL CONVERSION GAIN GATE AND CAPACITOR AND HDR COMBINATION - A pixel circuit having a shared control line for providing two control signals to the pixel array. One control line is used to provide a control signal to both a high dynamic range circuit and a dual conversion gain circuit to two pixel circuits. The pixel circuits each contain two pixel cells that have separate photo-conversion devices but share readout circuitry. | 07-29-2010 |
20100194952 | DEVICE AND METHOD FOR PROVIDING A REFERENCE SIGNAL - A device that includes: a pixel array and a sample and hold circuit configured to provide sampled current to the pixel array;
| 08-05-2010 |
20100194953 | DEVICE AND METHOD FOR PROVIDING A REFERENCE SIGNAL - A device that includes a pixel array, an interfacing circuit and a sample and hold circuit. The interfacing circuit directs to at least one pixel of the pixel array a sampled voltage that is outputted from the sample and hold circuit. The sample and hold circuit includes an NMOS transistor, a bootstrap circuit, a capacitor, sample phase switches and hold phase switches. During the sample phase the source of the NMOS transistor receives the input voltage; the gate of the NMOS transistor receives, from the bootstrap circuit a gate voltage that exceeds a supply voltage and a capacitor of the sample and hold circuit is charged to the input voltage to provide the sampled voltage. During a hold phase the capacitor stores the sampled voltage; the gate, source and drain of the NMOS transistor are maintained at the same potential and the source of the NMOS transistor is disconnected from an input port through which the input voltage was provided. | 08-05-2010 |
20100194954 | Multiplexed Read-out Architecture for CMOS Image Sensors - This invention targets improvement in CMOS sensors using a multiplexed read-out architecture in which pixels are output at the pixel V | 08-05-2010 |
20100194955 | CMOS IMAGE SENSOR - A pixel of a complementary metal oxide semiconductor (CMOS) image sensor includes a plurality of photodiodes for sensing light to thereby generate photoelectric charges in different regions; a plurality of transfer transistors for transferring photoelectric charges of corresponding photodiodes in response to a first control signal; a floating diffusion region for receiving photoelectric charges transferred by the plurality of transfer transistors; a rest transistor connected between a power supply voltage and the floating diffusion region for resetting the floating diffusion region by controlling a voltage loaded on the floating diffusion region in response to a second control signal; a drive transistor connected between the power supply voltage and the floating diffusion region to serve as a source follower buffer amplifier; and a select transistor connected between the drive transistor and a pixel output terminal for performing an addressing operation in response to a third control signal. | 08-05-2010 |
20100194956 | Apparatus and method for improving dynamic range and linearity of CMOS image sensor - Described herein is a circuit and related method for improving the dynamic range and the linearity characteristic of a CMOS image sensor. In various embodiments of the CMOS image sensor, a current sampler, a comparator, and a 1-bit memory are incorporated in each pixel circuit. In the image sensor, pixels are arranged in columns and a column slice is used to read the digital and analog singles from each column. In addition, a calibration circuit is incorporated in the sensor circuit for providing calibration current, which is used to generate calibration parameter. The image sensor operates in three non-overlapping modes: the difference mode, the WDR mode, and the calibration mode. The image sensor is switched among the three modes by control signals, which are provided to the image sensor by various control circuits. The image sensor normally operates in the difference mode and switches to the WDR mode when the difference between consecutive frames is over a threshold. The calibration mode allows the image sensor generate calibration parameters which are used to improve the linearity of the sensor through a interpolation method. | 08-05-2010 |
20100194957 | COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR - A CMOS image sensor includes a unit pixel including controlled by a high voltage; a reference high voltage generator for generating a reference high voltage; and a high voltage output unit for generating the high voltage by using the reference high voltage as an operating voltage to thereby output the high voltage to the unit pixel, wherein a level of the high voltage is stably maintained regardless of a variations of the reference high voltage level. | 08-05-2010 |
20100201858 | SOLID-STATE IMAGE SENSING DEVICE AND CONTROL METHOD OF SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device includes an image sensing region having pixels arranged in a two-dimensional array. A vertical shift register circuit selects a desired pixel row of the pixels by changing the number of one or more clock signals supplied and timing thereof in one horizontal period. A pulse selector circuit supplies a drive pulse to the desired pixel row selected by the vertical shift register circuit. | 08-12-2010 |
20100201859 | Transparent Conductor Based Pinned Photodiode - A pinned photodiode with improved short wavelength light response. In exemplary embodiments of the invention, a gate oxide is formed over a doped, buried region in a semiconductor substrate. A gate conductor is formed on top of the gate oxide. The gate conductor is transparent, and in one embodiment is a layer of indium-tin oxide. The transparent conductor can be biased to reduce the need for a surface dopant in creating a pinned photodiode region. The biasing of the transparent conductor produces a hole-rich accumulation region near the surface of the substrate. The gate conductor material permits a greater amount of charges from short wavelength light to be captured in the photo-sensing region in the substrate, and thereby increases the quantum efficiency of the photosensor. | 08-12-2010 |
20100201860 | METHOD AND APPARATUS PROVIDING CMOS IMAGER DEVICE PIXEL WITH TRANSISTOR HAVING LOWER THRESHOLD VOLTAGE THAN OTHER IMAGER DEVICE TRANSISTORS - A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V. | 08-12-2010 |
20100208114 | Two-path sigma-delta analog-to-digital converter and image sensor including the same - A two-path sigma-delta analog-to-digital converter and an image sensor including the same are provided. The two-path sigma-delta analog-to-digital converter includes at least one integrator configured to integrate a first integrator input signal during a second half cycle of a clock signal and integrate a second integrator input signal during a first half cycle of the clock signal by using a single operational amplifier; a quantizer configured to quantize integrated signals from the at least one integrator and output a first digital signal and a second digital signal; and a feedback loop configured to feed back the first and second digital signals to an input of the at least one integrator. A first analog signal and a second analog signal respectively input from two input paths are respectively converted to the first and second digital signals using the single operational amplifier, thereby increasing power efficiency and reducing an area. | 08-19-2010 |
20100208115 | SOLID-STATE IMAGE SENSOR - A pixel area with a two-dimensional array of pixels ( | 08-19-2010 |
20100220227 | Method of producing a solid-state image pickup apparatus, solid-state image pickup apparatus, and electronic apparatus - A method of producing a solid-state image pickup apparatus, including the steps of: forming a plurality of light-receiving portions on a substrate; forming a plurality of transfer gates to be connected to the plurality of light-receiving portions formed on the substrate; forming an insulation film on the substrate; exposing a base by etching the insulation film so that the etched part of the insulation film between the adjacent transfer gates tapers away; and injecting an impurity into the exposed part using the insulation film that has remained after the etching as a mask to thus form an impurity injection portion. | 09-02-2010 |
20100225796 | DOUBLE DATA RATE (DDR) COUNTER, ANALOG-TO-DIGITAL CONVERTER (ADC) USING THE SAME, CMOS IMAGE SENSOR USING THE SAME AND METHODS IN DDR COUNTER, ADC AND CMOS IMAGE SENSOR - In a double data rate (DDR) counter and counting method used in, for example, an analog-to-digital conversion in, for example, a CMOS image sensor and method, a first stage of the counter generates a least significant bit (LSB) of the value in the counter. The counter includes at least one second stage for generating another bit of the value in the counter. An input clock signal is applied to a data input of the first stage and a clock input of the second stage. | 09-09-2010 |
20100231770 | SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device has a plurality of pixels, a read-out circuit for reading out electric signals obtained by the photoelectric conversion element, and a signal processing unit for performing signal processing for the electric signal read out from the read-out circuit. The plurality of pixels include a first pixel having a transparent film, a plurality of second pixels each having a first color filter, a plurality of third pixels each having a second color filter, and a plurality of fourth pixels each having a third color filter. The signal processing unit has a color acquisition unit for acquiring a white pixel value and first to third color pixel values, an edge judgment unit, a color separation unit and a single color pixel calculation unit. | 09-16-2010 |
20100231771 | METHODS AND APPARATUS FOR HIGH DYNAMIC OPERATION OF A PIXEL CELL - A pixel circuit providing high dynamic operation, and methods of operating the pixel circuit providing for high dynamic operation. Methods include a lateral overflow and a double exposure mode, and a pixel output signal is determined according to whether a photosensor of the pixel circuit is saturated. | 09-16-2010 |
20100231772 | METHOD OF READING AN IMAGE SENSOR SIGNAL AND IMAGE SENSOR - The invention relates to matrix-array image sensors with MOS-technology active pixels, comprising a matrix-array of pixels arranged in rows and columns. To read the signal from a pixel, the reset potential present on a column conductor is sampled in two capacitors. The first capacitor is linked to an input of a comparator; the other input receives, through the second capacitor, a linear voltage ramp varying in a first direction for a first duration, then a linear voltage ramp in the reverse direction; a digital value N of the time between the start of this second ramp and the switching over of the comparator is counted; the useful potential present on the column conductor and representing the lighting of the pixel is sampled again, but in the first capacitor only; two ramps identical to the preceding ones are applied to the second input, through the second capacitor; a digital value N′ of the time between the start of the second reverse ramp and the switching over of the comparator is counted, the difference between the two counts N and N′ representing a measurement of the lighting of the pixel. | 09-16-2010 |
20100238335 | CLAMP CIRCUIT AND SOLID-STATE IMAGE SENSING DEVICE HAVING THE SAME - A clamp circuit includes a clamp circuit which limits an output of a source follower circuit, includes a first Nch transistor, a first constant current source connected between ground and the output terminal, a second Nch transistor having a gate that receives a bias voltage and a source connected to the output terminal of the source follower circuit, a second constant current source connected between the power supply and a drain of the second Nch transistor, and a first Pch transistor having a gate connected to the drain of the second Nch transistor, a source connected to the power supply, and a drain connected to the output terminal of the source follower circuit. | 09-23-2010 |
20100238336 | POWER-SUPPLY-NOISE CANCELLING CIRCUIT AND SOLID-STATE IMAGING DEVICE - A power supply voltage containing a noise component is supplied to each pixel at the time of sampling of a reset level of a signal read out from each pixel, and a power supply voltage in which the noise component is suppressed is supplied to each pixel at the time of sampling of a read level of the signal read out from each pixel. | 09-23-2010 |
20100238337 | MODULAR PICO PROJECTION WALL - A display system includes a laser projector that projects light onto a the back of a screen, a sensor that detects light reflected from the back of the screen, a processor in communication with the sensor, the processor controlling light projected from the laser projector based on data regarding the light detected from the sensor. The laser projector, sensor, and processor are all contained within a single housing. | 09-23-2010 |
20100238338 | SOLID STATE IMAGING DEVICE, IMAGING APPARATUS AND METHOD OF DRIVING SOLID STATE IMAGING DEVICE - A solid state imaging device includes: a photoelectric converting portion that is formed in a semiconductor substrate and serves to generate an electric charge depending on an incident light; a floating gate that stores the electric charge generated in the photoelectric converting portion; and a transistor that have a control gate and provided with the floating gate between the control gate and the semiconductor substrate. A specific resistance of the floating gate and that of the photoelectric converting portion are almost equal to each other. | 09-23-2010 |
20100238339 | IMAGE SIGNAL PROCESSING DEVICE AND METHOD - When a method or apparatus of assuring simultaneous exposure, such as a mechanical shutter, is not provided with a MOS imaging sensor, moving subjects are distorted with a MOS image sensor when capturing a still image of a fast-moving subject because imaging and reading are not simultaneous across the MOS sensor. Changing the MOS sensor exposure sequence and reading sequence, and interpolating the read data, change and correct the read sequence line by line when imaging a high resolution moving image, and thus improve distortion in moving subjects. | 09-23-2010 |
20100245644 | VARIABLE DYNAMIC RANGE PIXEL SENSOR CELL, DESIGN STRUCTURE AND METHOD - A pixel sensor cell including a column circuit, a design structure for fabricating the pixel sensor cell including the column circuit and a method for operating the pixel sensor cell including the column circuit are predicated upon the measurement of multiple reference data point and signal data point pairs from a floating diffusion at a variable capacitance. The variable capacitance is provided by excluding or including a transfer gate transistor capacitance in addition to a floating diffusion capacitance. Such a variable capacitance provides variable dynamic ranges for the pixel sensor cell including the column circuit. | 09-30-2010 |
20100245645 | Solid-state image pickup apparatus and electronic apparatus - A solid-state image pickup apparatus includes a photoelectric converter, a wiring portion, a micro lens, and an adjustment film. The photoelectric converter is formed on a light incident side in a substrate. The wiring portion is formed on a side of the substrate that is opposite to the light incident side. The micro lens is formed on a light incident side of the photoelectric converter. The adjustment film adjusts variation of a light reception sensitivity in the photoelectric converter with respect to a wavelength of light that enters the photoelectric converter through the micro lens, and the adjustment film is formed between the photoelectric converter and the micro lens. | 09-30-2010 |
20100245646 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 09-30-2010 |
20100245647 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a first chip including a plurality of pixels, each pixel including a light sensing unit generating a signal charge responsive to an amount of received light, and a plurality of MOS transistors reading the signal charge generated by the light sensing unit and outputting the read signal charge as a pixel signal, a second chip including a plurality of pixel drive circuits supplying desired drive pulses to pixels, the second chip being laminated beneath the first chip in a manner such that the pixel drive circuits are arranged beneath the pixels formed in the first chip to drive the pixels, and a connection unit for electrically connecting the pixels to the pixel drive circuits arranged beneath the pixels. | 09-30-2010 |
20100245648 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens. | 09-30-2010 |
20100245649 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR DRIVING THE SAME IN A NUMBER OF MODES - A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals. | 09-30-2010 |
20100259660 | A/D converter, solid-state image sensing device, and camera system - An A/D converter includes: a first comparator that compares an input signal, with a first reference signal which is a ramp wave having a predetermined polarity, and that when the input signal matches the first reference signal, reverses an output signal thereof; a second comparator that compares the input signal, with a second reference signal which is a ramp wave having a different polarity from the first reference signal, and that when the input signal matches the second reference signal, reverses an output signal thereof; and a counter capable of counting up so as to measure the comparison times taken by the first comparator and second comparator, wherein when either of the output signal of the first comparator and the output signal of the second comparator is first reversed, the counter ceases a counting action. | 10-14-2010 |
20100259661 | AMPLIFYING CIRCUIT AND IMAGING DEVICE IMAGING DEVICE - This invention is an amplification circuit which limits increased power consumption and circuit surface area use and an imaging device including this amplification circuit. After initially discharging a capacitor, a signal charge corresponding to the difference between pixel signals is transferred repeatedly to the capacitor during an integration phase storing a signal charge proportional to the number of repetitions. The output of amplification is the signal charge accumulated in the capacitor. The gain is independent of the capacitor capacitance ratio. Thus the capacitor size can be smaller than conventional amplification circuits. | 10-14-2010 |
20100259662 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device includes a pixel array section including a plurality of pixels, a pixel drive line controlling driving the pixels in each row, a signal line reading an analog signal of the pixels in each column, a pixel drive unit driving the pixels to perform a readout through the pixel drive line, and a readout circuit capable of converting the analog signal into a digital signal. At least the number of pixel drive lines or the number of signal lines is more than one, and the pixels of each pixel group are connected to different lines of either the pixel drive lines or the signal lines. The pixel drive unit sequentially drives the pixels in the pixel group at shifted timings, and the readout circuit includes an analog-to-digital converter sequentially receiving analog signals from the pixel group and sequentially converting the analog signals into digital signals. | 10-14-2010 |
20100259663 | IMAGE PICKUP APPARATUS - An image pickup apparatus comprising: a plurality of pixels each including a photoelectric converting element; a plurality of capacitor which receive signals from the plurality of pixels at first terminals; a plurality of clamping switches for setting a second terminal of each of the plurality of capacitor into a predetermined electric potential; a plurality of first storing units for storing signals from the second terminals of the plurality of capacitor; a plurality of second storing units for storing the signals from the second terminals of the plurality of capacitor; a first common output line to which the signals from the plurality of first storing units are sequentially output; a second common output line to which the signals from the plurality of second storing units are sequentially output; and a difference circuit for operating a difference between the signal from the first common output line and the signal from the second common output line. | 10-14-2010 |
20100265375 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a light-receiving element; and a multilayer film which is disposed on a side of a light-receiving surface of the light-receiving element and is formed by laminating a plurality of layers made of materials having different refractive indices, in which a defect layer is included in at least one of the laminated layers, wherein in the defect layer, a plurality of kinds of materials having different refractive indices coexist in a surface parallel to the light-receiving surface. | 10-21-2010 |
20100271524 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 10-28-2010 |
20100271525 | Integrated AD converter, solid state imaging device, and camera system - An integrated AD converter includes: a comparator comparing an input voltage with a reference voltage with a ramp waveform whose voltage value linearly changes with time; a high-bit counter triggered by inversion of an output signal of the comparator to start or stop an operation of counting for every cycle of a main clock signal; a time quantizer latching phase information at a timing at which the output signal is inverted using a plurality of clock signals including main clock signals of different phases, and decodes a value of the latched phase information to thereby output lower bits with a resolution higher than a clock cycle; and a regulating unit synchronizing the output signal with the main clock signal, and determines timings of starting and stopping the operation of the high-bit counter and a value for latching the phase information of the main clock signal using a signal resulting from the synchronization. | 10-28-2010 |
20100277633 | METHOD, APPARATUS AND SYSTEM PROVIDING IMAGER VERTICAL BINNING AND SCALING USING COLUMN PARALLEL SIGMA-DELTA DIGITAL CONVERSION - A method, apparatus and system are disclosed for digitizing a plurality of analog pixel signals of a pixel array in a manner which produces a digital signal representing the combination of said plurality of analog pixel signals. | 11-04-2010 |
20100283881 | Solid-state imaging apparatus, driving method of the solid-state imaging apparatus, and electronic equipment - A solid-state imaging apparatus includes: a pixel array section in which pixels including photoelectric conversion elements are two-dimensionally arranged in a matrix form, and a plurality of systematic pixel drive lines to transmit drive signals to read out signals from the pixels are arranged for each pixel row; and a row scanning section to simultaneously output the drive signals through the plurality of systematic pixel drive lines to a plurality of pixel rows for different pixel columns. | 11-11-2010 |
20100289936 | BUFFER CIRCUIT, IMAGE SENSOR CHIP COMPRISING THE SAME, AND IMAGE PICKUP DEVICE - A buffer circuit includes: first and second cascode constant current sources ( | 11-18-2010 |
20100295980 | CMOS IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A CMOS image sensor includes a pixel array unit, a row selection unit, and a logic circuit. The pixel array unit is used for sensing an object. The pixel array unit includes M pixels and P multiplexers wherein each of the M pixels is electrically connected to one of the P multiplexers. The row selection unit and the logic circuit are electrically connected to the P multiplexers. The row selection unit is used for generating a row selection signal. The logic circuit is used for determining a sensing region corresponding to the object wherein the sensing region includes N of the M pixels. Furthermore, the logic circuit controls Q multiplexers, which are electrically connected to the N pixels, to transmit the row selection signal to the N pixels. | 11-25-2010 |
20100295981 | SOLID-STATE IMAGE CAPTURING APPARATUS AND ELECTRONIC INFORMATION DEVICE - In a three-TR configuration pixel, the solid-state image capturing apparatus according to the present invention is capable of securing an electric potential difference sufficiently between a signal voltage and a reset voltage at the transferring of a signal charge and performing complete transferring of the signal charge from a photoelectric conversion element to an FD section easily and stably. Each pixel section, constituting a pixel array, has a 3TR configuration including reset transistors, transfer transistors and amplifying transistors. In each row of the pixel array, provided are a level shifter for driving reset drain wiring connected to a drain of the reset transistor, with an electric potential higher than a power supply voltage, and another level shifter for driving a reset signal line connected to a gate of the reset transistor, with an electric potential higher than the power supply voltage. | 11-25-2010 |
20100295982 | SOLID-STATE IMAGING DEVICE AND FRAME DATA CORRECTING METHOD - The present invention relates to a solid-state imaging device, etc., having a structure which enables to obtain an image with higher resolution by correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device ( | 11-25-2010 |
20100302424 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes a semiconductor layer having a first conductive type, diffusion layers which are arranged in the semiconductor layer, each having a second conductive type, and each includes a pixel, a pixel transistor disposed on the semiconductor layer, and an insulating layer which is disposed under the pixel transistor and which is not disposed under the diffusion layers. The pixel transistor is disposed between the other pixels different from the pixel being electrically connected to the pixel transistor. | 12-02-2010 |
20100302425 | LINEAR DISTRIBUTED PIXEL DIFFERENTIAL AMPLIFIER HAVING MIRRORED INPUTS - A pixel circuit that partially incorporates an associated column amplifier into the pixel circuitry. By incorporating part of a mirrored amplifier into the pixel, noise from the pixel is reduced. | 12-02-2010 |
20100302426 | PIXEL SENSOR WITH VOLTAGE COMPENSATOR - A photodetecting circuit is disclosed. The photodetecting circuit includes a photodetector, a storage node with first and second node terminals, a transfer transistor disposed intermediate the first node terminal of the storage node and the photodetector for electrically connecting the first node terminal and the photodetector upon receiving a transfer signal to a gate of the transfer transistor, a reset transistor disposed intermediate a reset voltage node and the first node terminal of the storage node for electrically connecting the first node terminal to the reset voltage node upon receiving a reset signal to a gate of the reset transistor, and an output circuit for generating an output signal based on a voltage at the first terminal. First the reset signal is applied, followed by the transfer signal. Next, a compensation signal is applied at the second terminal of the storage node. The compensation signal increases the voltage at the first terminal whilst the output circuit generates the output signal. The compensation signal is a logically negated version of the transfer signal. | 12-02-2010 |
20100321551 | ECLIPSE ELIMINATION BY MONITORING THE PIXEL SIGNAL LEVEL - An anti-eclipse circuit for an imaging sensor monitors the photo signal level output by a pixel to determine whether the photo signal corresponds to the pixel being operated at a saturated state. If so, there is a risk that the pixel may be susceptible to an eclipse distortion. When the pixel is detected as being operated in a saturated state, the anti-eclipse circuit pulls up the reset signal level previously stored in a sample and hold circuit to an appropriate voltage level in order to prevent an eclipse distortion from arising. | 12-23-2010 |
20110001862 | CAMERA MODULE - A camera module includes a lens barrel assembly and a lens holder. The lens assembly includes a lens barrel and a lens received in the lens barrel. The lens include an optical axis. The lens barrel defines a recess in a sidewall of the lens barrel. The barrel holder includes a peripheral sidewall, an inner flange formed on an inner surface of the peripheral sidewall, and a protrusion extending from the inner flange. The peripheral sidewall of the barrel holder is threadedly engaged with the lens barrel. The protrusion extends in a direction parallel to the optical axis and is inserted in the recess. | 01-06-2011 |
20110013066 | EXPOSURE CONTROL FOR IMAGE SENSORS - An imaging system utilizes an exposure control circuit to control the length of an exposure in full frame mode. The exposure control circuit receives as an input the antiblooming current from at least a representative sample of pixels and determines when to end an exposure based on the amount of current received. | 01-20-2011 |
20110013067 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes: a first semiconductor region forming a part of a photoelectric conversion element; a second semiconductor region stacked on the first semiconductor region, and forming a part of the photoelectric conversion element; a third semiconductor region to which a signal charge transferred from the photoelectric conversion element; a fourth semiconductor region of the first conductivity type having an higher impurity concentration, between the first and third semiconductor region and between the second and third semiconductor regions, closer to a main surface than the first semiconductor region, and connected to the first semiconductor region; a first gate electrode over the fourth semiconductor region, an insulating film on the main surface and between the first gate electrode and the fourth semiconductor region; and a second gate electrode between the third and fourth semiconductor regions, and over the insulating film. | 01-20-2011 |
20110019049 | PHOTO DETECTING APPARATUS AND UNIT PIXEL THEREOF - A unit pixel of a photo detecting apparatus includes a photogate, a transfer gate and a floating diffusion region. The photogate includes a junction gate extending in a first direction and a plurality of finger gates extending from the junction gate in a second direction substantially perpendicular to the first direction. The transfer gate is formed adjacent to the junction gate. The floating diffusion region is formed adjacent to the first transfer gate. | 01-27-2011 |
20110019050 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region. | 01-27-2011 |
20110025898 | CMOS ACTIVE PIXEL WITH VERY HIGH FUNCTIONAL DYNAMICS - The invention relates to a structure of an active pixel of the CMOS type ( | 02-03-2011 |
20110025899 | ARRAY OF MICROLENSES WITH INTEGRATED ILLUMINATION - The invention relates to a microlens array with integrated illumination, an imaging system with such a microlens array, an image detection device and also a method for producing the microlens array. | 02-03-2011 |
20110025900 | Solid-state image sensing device, analog-digital conversion method of solid-state image sensing device, and electronic apparatus - A solid-state image sensing device includes: a pixel array unit including pixels arranged in a matrix and a vertical signal line wired with respect to each pixel column; an analog-digital conversion circuit provided with respect to each pixel column and having a comparator using an analog signal as a comparison target input and a counter measuring a time from start to completion of the comparison of the comparator; a reference signal generating unit that generates reference signals with ramp waveforms; a first switch that, in a thinning readout mode, shorts the vertical signal line belonging to one pixel column of a specific group of pixel columns and the vertical signal line belonging to another group of pixel columns from which no signals are readout; and a second switch that, in the thinning readout mode, provides the reference signals to the comparator belonging to the one pixel column and the comparator belonging to the another group, respectively. | 02-03-2011 |
20110032405 | IMAGE SENSOR WITH TRANSFER GATE HAVING MULTIPLE CHANNEL SUB-REGIONS - An image sensor pixel includes a photosensitive element, a floating diffusion region and a transfer transistor channel region. The transfer transistor channel region is disposed between the photosensitive region and the floating diffusion region. The transfer transistor channel region includes a first channel sub-region having a first doping concentration and a second channel sub-region having a second doping concentration that is different from the first doping concentration. | 02-10-2011 |
20110043676 | CMOS IMAGE SENSOR AND IMAGE SIGNAL DETECTING METHOD - A CMOS image sensor includes a photodiode, a switch configured to transfer a signal sensed by the photodiode to a sensing node, and a comparator electrically and directly connected to the sensing node and configured to compare the sensed signal of the sensing node and a ramp signal. Reset offset of the comparator is maintained at a constant offset voltage level during an initialization mode. | 02-24-2011 |
20110058082 | CMOS Image Sensor with Noise Cancellation - An image sensor that has one or more pixels within a pixel array coupled to a control circuit and to one or more subtraction circuits. The control circuit may cause each pixel to provide a first reference output signal and a reset output signal and may then cause each pixel to provide a light response output signal and a second reference output signal. The light response output signal corresponds to the image that is to be captured by the sensor. The subtraction circuit may provide a difference between the reset output signal and the first reference output signal to create a noise signal, and may provide a difference between the second reference output signal and the light response output signal to create a normalized light response output signal. The noise signal may then be subtracted from the normalized light response output signal to generate an image signal having reset noise cancelled therefrom. | 03-10-2011 |
20110074995 | METHODS AND APPARATUS FOR IMAGING SYSTEMS - Imaging arrays comprising at least two different imaging pixel types are described. The different imaging pixel types may differ in their light sensitivities and/or light saturation levels. Methods of processing the output signals of the imaging arrays are also described, and may produce images having a greater dynamic range than would result from an imaging array comprising only one of the at least two different imaging pixel types. | 03-31-2011 |
20110080510 | IMAGE TAKING DEVICE AND CAMERA SYSTEM - An image sensor includes a plurality of pixels, a plurality of sense circuits, and a count circuit. Each sense circuit is configured to read out electrical signals from at least one pixel associated with the sense circuit in order to generate data representing whether or not photons have been received by the sense circuit. The count circuit is in communication with a sense circuit selected from the plurality of sense circuits. The count circuit is configured to provide integration results for the pixels associated with the sense circuits based on the data received from the sense circuits. | 04-07-2011 |
20110080511 | IMAGE SENSORS AND METHODS OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate. | 04-07-2011 |
20110080512 | ANALOG-TO-DIGITAL CONVERTER FOR IMAGE SENSORS - An analog-to-digital (ADC) converter is disclosed that uses aspects of a single-slope ramp ADC, but with jump steps in the ramp voltage to increase speed. A look-ahead controller can cause a ramped voltage level to jump step and detect the number of analog input signals impacted due to the jump step. If the detected number is below a predetermined threshold, the ramp can be maintained from the new voltage level after the jump. If the detected number is above the predetermined threshold, the ramped voltage level can be returned to its original voltage level and trajectory. Thus, jump steps can be used to increase speed, but dynamic testing can be performed to ensure that error rates due to the jump step are minimized. | 04-07-2011 |
20110085067 | MULTILAYER IMAGE SENSOR PIXEL STRUCTURE FOR REDUCING CROSSTALK - An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type. | 04-14-2011 |
20110090385 | IMAGING DEVICE - Charge generated in a photodiode is properly split for difference processing. An imaging element is constituted by a semiconductor such that a charge accumulation portion is connected to a light receiving portion using a buried photodiode and charge is split from the charge accumulation portion by a plurality of gates and is accumulated. An imaging device includes a control device performing control so as to accumulate charge that is generated by a photoelectric conversion at an exposure cycle synchronous with the light emission of a light source. The exposure cycle includes a first period for receiving reflection light from a subject illuminated by light from the light source and a second period for receiving light from the subject illuminated by an environmental light not including the light from the light source. The imaging device includes a charge accumulation region connected to each photoelectric conversion region, a first charge storage region for receiving charge generated in the photoelectric conversion regions during the first period via the charge accumulation portion, and a second charge storage region for receiving charge generated in the photoelectric conversion regions during the second period via the charge accumulation portion. | 04-21-2011 |
20110096219 | IMAGE SENSOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An image sensor package includes a substrate, an image sensor chip, a plurality of metal wires and an encapsulant. The substrate has an upper face, a lower face and a plurality of connecting pads arranged on the upper face. The image sensor chip has an active surface, a back surface opposite to the active surface and a plurality of bonding pads arranged on the active surface. The metal wires electrically connect the bonding pads of the image sensor chip to the connecting pads of the substrate. The transparent cover is arranged above the image sensor chip. A gap is formed between the transparent cover and the image sensor chip. The encapsulant is disposed around the transparent cover and the metal wires, and is used for sealing the metal wires and fixing the transparent cover above the image sensor chip. | 04-28-2011 |
20110102657 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer. | 05-05-2011 |
20110109781 | SOLID STATE IMAGING DEVICE AND METHOD OF CONTROLLING THE SAME - According to one embodiment, a solid state imaging device includes a first photodiode, a first transistor, a floating diffusion, a second transistor, a third transistor. The first photodiode performs photoelectric conversion and accumulates a charge obtained. The first transistor reads the charge. The floating diffusion is one end of a current pathway of the first transistor. The charge is read through the first transistor to the first node. The second transistor's gate is connected to the first node. The second transistor's one end of a current pathway is connected to a vertical signal line. The one end of a current pathway of the third transistor is connected to the floating diffusion. Another end is connected to a power supply. The charge accumulated in the floating diffusion is discharged to the power supply by turning on the third transistor. | 05-12-2011 |
20110115958 | Solid-State imaging device and load current source circuit - Disclosed herein is a solid-state imaging device including: a plurality of pixel circuits each of which converts an optical signal into a pixel signal; a load current source circuit adapted to supply a load current, used to read out the pixel signal from the plurality of pixel circuits, to the pixel circuits on a column-by-column basis; a signal readout circuit adapted to read out a reference signal and the pixel signal from the pixel circuits on a row-by-row basis and output the difference between the reference and pixel signals that have been read out; and a control signal generation circuit adapted to generate a maintenance control signal used to maintain the load current constant during a readout period that lasts from when the reference signal is read out by the signal readout circuit to when the pixel signal is read out by the signal readout circuit. | 05-19-2011 |
20110115959 | Solid-state imaging device, method of driving the device, and camera system - A solid-state imaging device includes: a pixel section formed by pixels performing photoelectric conversion arranged in a matrix; a pixel signal readout section capable of column-parallel processing including an A/D conversion function for reading out a pixel signal from the pixel section and performing analog-digital conversion of the signal, the pixels being read in groups; a voltage sampling section sampling a bias voltage generated by an internal or external voltage generating circuit for a period in accordance with a control signal and supplying the sampled bias voltage to the pixel signal readout section; and a control section controlling the signal readout operation of the pixel signal readout section and the voltage sampling operation of the voltage sampling section. The pixel signal readout section includes a functional portion. The control section exercises control such that the voltage sampling operation is performed in a period other than at least either of a period in which an analog signal is read out or in which A/D conversion is carried out. | 05-19-2011 |
20110115960 | ACTIVE PIXEL SENSOR WITH MIXED ANALOG AND DIGITAL SIGNAL INTEGRATION - An active pixel sensor includes mixed analog and digital signal integration on the same substrate. The analog part of the array forms the active pixel sensor, and the digital part of the array does digital integration of the signal. | 05-19-2011 |
20110122307 | REDUCED PIXEL AREA IMAGE SENSOR - An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and convening the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node. | 05-26-2011 |
20110128429 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE CAPTURING APPARATUS, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A solid state imaging device including a semiconductor substrate; at least one light sensing portion with a charge accumulating portion in the semiconductor substrate; and a dielectric layer over an induced layer of the semiconductor substrate adjacent to the charge accumulation portion, the induced layer being induced by the dielectric layer | 06-02-2011 |
20110128430 | Image Sensors Having Multiple Photoelectric Conversion Devices Therein - Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals. | 06-02-2011 |
20110141333 | SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other. | 06-16-2011 |
20110149136 | COLUMN OUTPUT CIRCUITS FOR IMAGE SENSORS - A pixel array in an image sensor includes multiple pixels arranged in rows and columns with each column of pixels electrically connected to a column output line. A sample and hold circuit is electrically connected to each column output line. In one embodiment in accordance with the invention, each sample and hold circuit includes one capacitor for receiving and storing a signal voltage and a second capacitor for receiving and storing a reset voltage. The sample and hold circuits are divided into distinct groups, with each group including two or more sample and hold circuits. A pair of buffers is electrically connected to each distinct group. One global bus receives the signal voltages from at least a portion of buffers and another global bus receives the reset voltages from at least a portion of the other buffers. The global buses can include one or more signal lines. | 06-23-2011 |
20110149137 | SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a pixel region to be used for generating pixels, a black reference region provided outside the pixel region, and a dummy region provided between the black reference region and the pixel region, and including a light shielding pattern configured to shield the black reference against light coming from the pixel region. | 06-23-2011 |
20110157444 | SUSPENDING COLUMN READOUT IN IMAGE SENSORS - An image sensor includes a two-dimensional array of pixels having multiple column outputs and an output circuit connected to each column output. Each output circuit is configured to operate concurrent sample and read operations. An analog front end (AFE) circuit processes pixel data output from the output circuits and an AFE clock controller transmits an AFE clocking signal to the AFE circuit to effect processing of the pixel data. A timing generator outputs a column address sequence that is received by a column decoder. During one or more sample operations the AFE clock controller suspends the output of the AFE clocking signal and the timing generator suspends the output of the column address sequence during the sample operation. The output of the AFE clocking signal and the column address sequence resume at the end of the sample operation. | 06-30-2011 |
20110157445 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor device comprising a first semiconductor section including a first wiring layer at one side thereof, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other, a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication. | 06-30-2011 |
20110157446 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME, AND SENSOR DEVICE - An image sensor is provided. The image sensor includes a photoelectric conversion portion including a light receiving element; and a well region defined by a wall structure that is formed integrally on the photoelectric conversion portion, wherein the well region is positioned to correspond to the light receiving element of the photoelectric conversion portion. An image sensor device and methods of manufacture are also provided. | 06-30-2011 |
20110157447 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 06-30-2011 |
20110164161 | METHOD OF MANUFACTURING CMOS IMAGE SENSOR USING DOUBLE HARD MASK LAYER - Disclosed is a method of manufacturing a CMOS image sensor, capable of forming silicide in a logic region and facilitating ion implantation into a pixel region while keeping a hard mask layer in a thin thickness without performing a process for removing the hard mask layer. The critical dimension is easily controlled when forming a gate pattern and the uniformity in the critical dimension of a gate photoresist pattern is improved. The method includes the steps of forming a gate conductive layer on a substrate on which a pixel region and a logic region are defined; forming a hard mask pattern on the gate conductive layer in such a manner that a thickness of the hard mask pattern in the pixel region is thicker than a thickness of the hard mask pattern in the logic region; forming a gate pattern in the pixel region and the logic region by etching the gate conductive layer using the hard mask pattern as an etching barrier; removing the hard mask pattern remaining in the logic region; and forming silicide in the logic region. | 07-07-2011 |
20110169991 | IMAGE SENSOR WITH EPITAXIALLY SELF-ALIGNED PHOTO SENSORS - An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed in the first epitaxial layer and has a second conductivity type. The epitaxially grown photo-sensor region includes an extension region that extends under a portion of the transfer transistor gate. | 07-14-2011 |
20110169992 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes: an image area including pixels arranged in a matrix; two row memories each of which alternatively (i) stores at a time pixel signals for each of rows, and (ii) sequentially provides each of the stored pixel signals; a reading control unit, during a horizontal period, sequentially reading the stored pixel signals one by one from a first line memory to cause the first line memory, the first line memory representing one of the two row memories; a holding control unit causing, during the horizontal period, a second line memory to hold pixel signals provided from one of the rows in the image area, the second line memory representing another one of the two row memories; and a reading suspending unit causing the reading control unit to suspend reading out the pixel signals from the first line memory during a noise occurrence predicted period. | 07-14-2011 |
20110176045 | COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR IMAGE SENSOR, DATA READOUT METHOD THEREOF, AND ELECTRONIC SYSTEM INCLUDING THE SAME - A complementary metal-oxide semiconductor (CMOS) image sensor and a pixel data readout method of the same are provided. The CMOS image sensor includes: a first readout line which outputs pixel data from a shared pixel group in an odd row of a column of a pixel array in a Bayer pattern during a horizontal period; and a second readout line which outputs pixel data from a shared pixel group in an even row of the column of the pixel array during the horizontal period, wherein pixel data output to the first and second readout lines during the horizontal period correspond to a basic Bayer pattern and pixels from which pixel data are read out in each column sequentially shifts in a column direction at each horizontal period. | 07-21-2011 |
20110181765 | IMAGING DEVICE - A circuit unit is formed on a supporting member, and a solid state imaging element is formed on the circuit unit. Also, a lens mechanism is provided on a front surface of the solid state imaging element. The solid state imaging element, the circuit unit and the lens mechanism are mounted in a frame body. In addition, photoelectric conversion elements are attached to the outside of the frame body. Each of the photoelectric conversion elements is configured to have almost no light reception sensitivity to the light wavelength region of more than 300 nm and have sensitivity to the light wavelength region of 300 nm or less. The photoelectric conversion element thus configured can sense particularly flames, electric sparks and the like among ultraviolet light. | 07-28-2011 |
20110187909 | METHOD AND SYSTEM FOR CMOS IMAGE SENSING DEVICE - Method and system for manufacturing CMOS image sensing device with reduced blooming. The method includes a step for providing a substrate material. The substrate material can be characterized by a first dimension and a second dimension. In addition, the method includes a step for defining an active region on the substrate material. The active region is characterized by a third dimension and a fourth dimension. The method further includes a step for defining a non-active region on the substrate material. The non-active region is different from the active region. The non-active region is characterized by a fifth dimension and a sixth dimension, the non-active region including a silicon material. The method includes a step for defining a depletion region within the active region. In addition, the method includes a step for forming an n-type region positioned above the depletion region. | 08-04-2011 |
20110187910 | Solid-state imaging device and imaging apparatus - A solid-state imaging device includes: a pixel array section having an effective pixel region formed by a plurality of pixels which are disposed in the form of a matrix, each of which includes a photoelectric conversion device and a transistor reading out an electric charge obtained by photoelectric conversion at the photoelectric conversion device, and which are illuminated by light and a light-shielded pixel region formed by a plurality of pixels which are shielded from light; a row scan section selecting and controlling each row of pixels of the pixel array section to output a signal from each of the pixels of the selected row of pixels to a column signal line provided in association with the row of pixels; and an A-D conversion section converting the signal output from the signal line into a digital signal. | 08-04-2011 |
20110187911 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate. | 08-04-2011 |
20110187912 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device according to an embodiment includes a light sensing part which conducts photoelectric conversion on incident light. The solid state imaging device includes a ferroelectric layer including an organic compound on a surface of the light sensing part on which light is incident. The solid state imaging device includes a transparent electrode formed on the ferroelectric layer. | 08-04-2011 |
20110194007 | CMOS IMAGE SENSOR - Disclosed herein is a Complementary Metal-Oxide Semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array, a frame memory, and an analog-to-digital converter. The pixel array includes N unit pixels for converting optical signals, caused by light, into electric signals. The frame memory eliminates offset voltage included in reset voltage and signal voltage transmitted from the pixel array and internal offset voltage, and performs Correlated Double Sampling (CDS) on the reset voltage and the signal voltage. The analog-to-digital converter converts an analog signal, transmitted from the frame memory, into a digital signal. | 08-11-2011 |
20110194008 | PHOTOGRAPHING APPARATUS - Provided is a photographing apparatus capable of completely removing dust from a surface of an image pickup unit mounted in the photographing apparatus. The photographing apparatus includes: a lens unit comprising a plurality of lenses; an image pickup unit that receives image light from the lens unit to form the image light into an image; a filter disposed on a side of the image pickup unit; a first vibration generating unit that is coupled to a first side of the filter; and a second vibration generating unit that is coupled to a second side of the filter opposite to the first side. | 08-11-2011 |
20110199525 | METHOD AND APPARATUS PROVIDING PIXEL STORAGE GATE CHARGE SENSING FOR ELECTRONIC STABILIZATION IN IMAGERS - An imaging device that stores charge from a photosensor under at least one storage gate. A driver used to operate the at least one storage gate, senses how much charge was transferred to the storage gate. The sensed charge is used to obtain at least one signature of the image scene. The at least one signature may then be used for processing such as e.g., motion detection, auto-exposure, and auto-white balancing. | 08-18-2011 |
20110199526 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR DRIVING THE SAME - A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals. | 08-18-2011 |
20110205417 | METHOD AND IMAGE SENSOR PIXEL WITHOUT ADDRESS TRANSISTOR - The invention describes in detail a solid-state CMOS image sensor, specifically the CMOS image sensor pixel that has only two row lines per pixel, pinned photodiode for sensing light, and one or two column lines. The pixel does not have an address transistor and the sensing and reset transistors are both MOS p-channel type. This architecture results in a low noise operation with a very small output transistor random noise. In addition this new pixel architecture allows for the standard CDS signal processing operation, which reduces the pixel to pixel non-uniformities and minimizes kTC reset noise. The pixel has high sensitivity, high conversion gain, high response uniformity, and low noise, which is enabled by the efficient 3T pixel layout. | 08-25-2011 |
20110205418 | PIXEL DRIVE CIRCUIT, IMAGE CAPTURE DEVICE, AND CAMERA SYSTEM - A pixel drive circuit includes a plurality of pixel circuits each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed. | 08-25-2011 |
20110205419 | PIXEL DRIVE CIRCUIT, IMAGE CAPTURE DEVICE, AND CAMERA SYSTEM - A pixel drive circuit including a plurality of pixel circuits, each including a photoelectric converting unit for converting an incident light into an electric charge and accumulating the converted electric charge, the plurality of pixel circuits being arranged in a matrix shape, an address decoder for selecting the pixel circuits to be controlled which are arranged on an identical line, a storage circuit for storing operation information to be executed by the pixel circuits selected by the address decoder, and a control circuit for controlling an operation of the pixel circuits selected by the address decoder in accordance with a storage state of the storage circuit. The control circuit controls a charge discharging operation of discharging an electric charge remaining in the photoelectric converting unit of each of the pixel circuits. The storage circuit holds the storage state until the charge discharging operation is completed. | 08-25-2011 |
20110211103 | SOLID-STATE IMAGE PICKUP APPARATUS, DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC DEVICE - A solid-state imaging device with a photodiode, a first charge accumulation region electronically connected to the photodiode, a second charge accumulation region electronically connected to the photodiode, where a charge generated in the photodiode is distributed into the first charge accumulation region and the second charge accumulation region based on an amount of charge. | 09-01-2011 |
20110228153 | CMOS IMAGER WITH INTEGRATED CIRCUITRY - A CMOS imager is integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. Integrating a CMOS imager and peripheral circuitry allows for a single chip image sensing device. | 09-22-2011 |
20110234875 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively. | 09-29-2011 |
20110234876 | IMAGE SENSOR WITH DOUBLE CHARGE TRANSFER FOR LARGE DYNAMIC RANGE AND METHOD OF READING - The invention relates to image sensors with active pixels. | 09-29-2011 |
20110242384 | Image sensor using light-sensitive device and method of operating the image sensor - Provided are an image sensor using a light-sensitive oxide semiconductor material as a light-sensitive device and a method of operating the image sensor for acquiring RGB values of incident light in the image sensor, the image sensor includes an array of a plurality of light-sensing cells wherein each of the light-sensing cells includes a light-sensitive oxide semiconductor layer that forms a channel region of an oxide semiconductor transistor. Electronic characteristics of the light-sensitive oxide semiconductor layer vary according to an amount of light irradiated onto the light-sensitive oxide semiconductor layer. Each of the light-sensing cells constitutes a single unit color pixel. | 10-06-2011 |
20110242385 | Solid-state imaging device and camera system - A solid-state imaging device includes: a pixel circuit including a photoelectric conversion device and an amp device that outputs electric charges, which are photoelectrically converted by the photoelectric conversion device, through electric potential modulation of an output signal line; and a reading section including an AD (analog digital) conversion circuit that compares an output level of the signal line with a reference signal which changes with a regular slope and digitalizes an output signal on the basis of a timing at which a previously-defined relationship is satisfied between the output signal and the reference signal. | 10-06-2011 |
20110242386 | SOLID-STATE IMAGE PICKUP DEVICE, DRIVING METHOD OF SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC DEVICE - A solid-state image pickup device includes: a plurality of unit pixels including at least a photoelectric converting section, a charge-to-voltage converting section, and one or more transfer means for transferring a charge in a predetermined path; a light shielding film for shielding a surface of the plurality of unit pixels excluding at least a light receiving section of the photoelectric converting section from light; and voltage controlling means for controlling a voltage applied to the light shielding film; wherein transfer of the charge by one of the transfer means is controlled by controlling the voltage applied to the light shielding film. | 10-06-2011 |
20110242387 | PHOTOELECTRIC CONVERSION APPARATUS AND MANUFACTURING METHOD FOR A PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus ( | 10-06-2011 |
20110242388 | IMAGE SENSING DEVICE AND CAMERA - An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region. | 10-06-2011 |
20110249162 | ANALOG TO DIGITAL CONVERSION IN IMAGE SENSORS - An image sensor has a pixel array and an input circuit. The input circuit includes a first input, a second input and two coupling capacitors. The first input receives an analog signal from a pixel of the pixel array which has a first level during a first calibration period and a second level during a second read period. The second input receives a reference ramp signal. A comparator circuit compares the ramp signal and the analog signal. The analog signal and the ramp signal are constantly read onto the coupling capacitors during both the first calibration period and the second read period. The ramp circuit begins providing the ramp signal during the second read period so as to determine the change in magnitude of the analog signal between the first calibration period and the second read period, the ramp circuit also begins providing the ramp signal during the first calibration period so as to compensate for any delay in the ramp circuit providing the ramp signal during the second read period. | 10-13-2011 |
20110249163 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-13-2011 |
20110249164 | IMAGE PICKUP APPARATUS - This invention provides an image pickup device comprising a plurality of pixels each including a photoelectric conversion unit, a semiconductor area to which a signal from the photoelectric conversion unit is transferred, a transfer switch for transferring the signal from the photoelectric conversion unit to the semiconductor area, and a read unit for reading out the signal from the semiconductor area, and a drive circuit for outputting a first level at which the transfer switch is set in an OFF state, a second level at which the transfer switch is set in an ON state, and a third level between the first level and the second level, wherein the drive circuit controls to hold the third level for a predetermined time while the transfer switch is changing from the ON state to the OFF state. | 10-13-2011 |
20110254987 | CMOS IMAGE SENSOR ARRAY WITH INTEGRATED NON-VOLATILE MEMORY PIXELS - An imaging system includes an imaging array and readout circuitry. The imaging array includes image sensor pixels for capturing image data and one or more non-volatile memory (NVM) pixels for storing NVM data. The readout circuitry is coupled to the imaging array to readout the image data and the non-volatile memory data. | 10-20-2011 |
20110254988 | SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state image sensing element ( | 10-20-2011 |
20110261242 | IMAGING DEVICE MODULE - An imaging device module includes an imaging device including a light incident plane on which light is incident, and a reverse face disposed on an opposite side of the light incident plane; and a thermal conductive sheet provided on the reverse face for dissipating heat generated from the imaging device. | 10-27-2011 |
20110267521 | IMAGE SENSING DEVICE - An image sensing device includes an image sensing chip, an optical module and a protecting element. The image sensing chip has a front surface defining an image sensing region thereon. The optical module includes a barrel and at least one transparent element. The barrel is directly disposed on the front surface and around the image sensing region. The transparent element is disposed in the barrel and faces to the image sensing region. The protecting element covers an area of the front surface outside the optical module and surrounds the barrel. The image sensing device has a thin thickness. | 11-03-2011 |
20110267522 | Solid-state imaging device, drive method thereof and camera system - A solid-state imaging device includes: pixel signal reading lines; a pixel unit in which pixels including photoelectric conversion elements are arranged; and a pixel signal reading unit performing reading of pixel signals from the pixel unit through the pixel signal reading lines, wherein the pixel signal reading unit includes current source circuits each of which includes a load element as a current source connected to the pixel signal reading line forming a source follower, and the current source circuit includes a circuit generating electric current according to a slew rate of the pixel signal reading line and replicating electric current corresponding to the above electric current to flow in the current source. | 11-03-2011 |
20110279722 | IMAGE SENSOR - The invention relates to an image sensor, in particular to a CMOS image sensor, for digital cameras, having a plurality of pixels arranged in rows and columns, wherein the respective pixel comprises: a light sensitive detector element to generate electrical charge from incident light during an exposure procedure, a readout node, a transfer gate to which a transfer control pulse can be applied to allow a charge transfer from the detector element to the readout node, and a reset device to reset a charge present in the readout node to a reference value. The image sensor furthermore has a control device for the control of the transfer gate and of the of the reset device of the respective pixel. The control device is designed so that the respective pixel is read out in a plurality of readout steps during the ongoing charge generation in a single exposure procedure, and indeed such that a respective transfer control pulse is applied to the transfer gate for each of the plurality of readout steps and a respective readout result is then produced; wherein the reset device is activated between the transfer control pulses of the respective exposure procedure; and wherein only the last transfer control pulse enables a complete charge transfer of the respective charge present in the detector element to the readout node. | 11-17-2011 |
20110279723 | Signal processing circuit, solid-state imaging device, and camera system - A signal processing circuit includes: a reference signal generating circuit that generates a reference signal of a ramp waveform of which a voltage value varies with the lapse of time by changing a current; and a signal processing unit including a plurality of processing sections that process the reference signal as a ramp wave and a potential of a supplied analog signal, wherein the reference signal processing circuit has a function of adjusting an offset of the reference signal by adjusting the current from the time of starting the generation of the reference signal or adjusting the level of the reference signal at least at the time of starting the generation of the reference signal. | 11-17-2011 |
20110279724 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device includes: a pixel unit in which a plurality of pixels that perform photoelectric conversion are arranged in the form of a matrix; a pixel signal reading unit performing reading of a pixel signal in a signal line from the pixel unit in the unit of plural pixels, and performing column signal processing with respect to an input signal; and an evaluation pattern generation unit receiving a control signal and a signal line interception signal and generating a pseudo-evaluation pattern according to the control signal. | 11-17-2011 |
20110279725 | IMAGE SENSOR IN CMOS TECHNOLOGY WITH HIGH VIDEO CAPTURE RATE - An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix. | 11-17-2011 |
20110285889 | CAMERA MODULE AND METHOD OF MANUFACTURING THE CAMERA MODULE - A camera module includes an image sensor chip including a substrate having first and second opposite surfaces and a ground pad on the first surface, a housing surrounding the sides of the image sensor chip but which leaves the second surface of the image sensor chip exposed, an electromagnetic wave-shielding film united with the housing, and an electrical conductor electrically connected to the ground pad. The camera module also has an optical unit disposed on the first surface of the image sensor chip in the housing to guide light from an object to the image sensor chip. The electrical conductor extends through a side of the housing. The conductor also contacts the electromagnetic wave-shielding film to electrically connect the ground pad and the electromagnetic wave-shielding film. | 11-24-2011 |
20110285890 | CAMERA MODULE - A camera module has a lens unit including a lens, a first chip having an image region on which an image is formed from light having passed through the lens unit, a housing enclosing side surfaces of the lens unit and the first chip, a second chip and at least one printed circuit board. The chips are mounted to the at least one printed circuit board. | 11-24-2011 |
20110285891 | Integrated Display Camera Using Masked Display Elements - Embodiments of the present invention provide a system for capturing photographic images with a camera integrated in an electronic display. The system includes: a display screen; a set of display elements coupled to a front side of the display screen; a set of masking elements coupled behind the set of display elements; and an image-capturing mechanism coupled to a backside of the display screen. The masking elements are configured to prevent the display elements from displaying behind the masking elements and wherein some portion of the display screen is at least partially transparent. | 11-24-2011 |
20110285892 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device including a pixel region having a photoelectric converter, and a transfer MOS transistor for transferring charges in the photoelectric converter to a floating diffusion, comprises a first insulating film continuously arranged to cover the photoelectric converter, and a first side surface and a first region of an upper surface of a gate electrode of the transfer MOS transistor while not arranged on a second region of the upper surface, the first insulating film being configured to function as an antireflection film, a contact plug connected with the floating diffusion, and a second insulating film continuously arranged to cover a periphery of the contact plug on the floating diffusion, and the second side surface and the second region while not arranged on the first region, the second insulating film being configured to function as an etching stopper in forming the contact plug. | 11-24-2011 |
20110292265 | Integrating A/D converter, integrating A/D conversion method, solid-state imaging device and camera system - An integrating A/D converter includes: a comparator comparing an input voltage to a reference voltage having a ramp waveform, a voltage value of which linearly varies with time; a higher-order bit counter starting operation or stopping operation triggered by inversion of an output signal of the comparator and outputting higher order bits by performing counting in a cycle of a clock signal; and a time-to-digital converter latching phase information of the clock signal corresponding to plural signals obtained by delaying an output signal of the comparator and decoding the latched values to output lower order bits having higher resolution than the clock cycle. | 12-01-2011 |
20110292266 | Electro-Active Focus and Zoom Systems - Aspects of the present invention provide dynamic focusing systems and dynamic zoom systems having no moving parts. The dynamic focusing systems can include an electro-active lens, a fixed focus lens in optical communication with the electro-active lens and a focal plane. The dynamic zoom systems can include a first electro-active lens, a second electro-active lens, a fixed focus lens, and a focal plane. The electro-active lenses of the present invention can have an adjustable optical power to provide variable focusing capability. The dynamic focusing systems and dynamic zoom systems can include a controller for altering the adjustable optical powers of the electro-active lenses. The dynamic focusing systems can focus on objects at various distances based on the controlled optical power of the included electro-active lenses. The dynamic zoom systems can provide magnification and de-magnification based on the controlled optical power of the included electro-active lenses. | 12-01-2011 |
20110298955 | Clock multiplying circuit, solid-state imaging device, and phase-shift circuit - A clock multiplying circuit includes: first and second inverters being ON/OFF-controlled by a positive- or negative-phase signal, respectively, of a first clock signal and including current source and current sync terminals; a capacitive element provided between output ends of the inverters; a current supplying unit increasing, if a frequency of the first clock signal increases, the control current and supplying the control current to the current source terminals of the inverters and outputting, from the current sync terminals of the inverters, a control current the same current amount as that of a control current to the current source terminal; a differential detecting unit receiving input of a potential difference signal between both electrodes of the capacitive element and generating a second clock signal having a phase difference of 90 degrees; and a multiplied-signal generating unit generating a double signal of the first clock signal on the basis of the clock signals. | 12-08-2011 |
20110298956 | LINEAR IMAGE SENSOR IN CMOS TECHNOLOGY - A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state. | 12-08-2011 |
20110298957 | IMAGE DATA PROCESSING METHOD, IMAGE SENSOR AND IMAGE DATA PROCESSING SYSTEM USING THE METHOD - An image sensor supporting a normal sampling mode and a 1/N sampling mode for transmitting image data detected by a plurality of unit image sensors and stored in a plurality of latch circuits to a data processor using a plurality of transmission lines, wherein N is a natural number greater than 2, the image sensor including a horizontal address generator configured to generate horizontal addresses corresponding to addresses of the plurality of latch circuits, and to generate, based on the horizontal addresses, a first channel selection control signal and a second channel selection control signal of which activation times at least partially overlap. | 12-08-2011 |
20110304758 | HIGH SPEED IMAGING THROUGH IN-PIXEL STORAGE - Disclosed are a system, a method and an apparatus of high speed imaging through in-pixel storage. In one embodiment, an image sensor includes an event sensor to detect events in a process. In addition, the image sensor includes an in-pixel storage to increase an event capture rate of the events through a separation of an event capture operation from other operations of the image sensor. | 12-15-2011 |
20110310282 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent. | 12-22-2011 |
20110317055 | SOLID-STATE IMAGING DEVICE, CAMERA MODULE, AND IMAGING METHOD - According to one embodiment, a third optical black portion is arranged in parallel with a first optical black portion in a row direction and in parallel with a second optical black portion in column direction. At least one of the vertical line correction circuit and the horizontal line correction circuit adds/subtracts arithmetic average of the third black level signal generated by the third optical black portion. | 12-29-2011 |
20110317056 | IMAGING ELEMENT AND IMAGING DEVICE - Disclosed herein is an imaging element including a pixel array section, a first current source, a first ground line, a first switch, a first capacitive element, a second switch, and a current control circuit. | 12-29-2011 |
20120002092 | LOW NOISE ACTIVE PIXEL SENSOR - A vertically-integrated active pixel sensor includes a sensor layer connected to a circuit layer. At least one pixel region on the sensor layer includes a photodetector and a charge-to-voltage converter. At least one pixel region on the circuit layer consists of a source follower input transistor. A connector connects the charge-to-voltage converter to a gate of the source follower input transistor. The connector is used to transfer a signal from the charge-to-voltage converter to the source follower input transistor. | 01-05-2012 |
20120008032 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a comparison section comparing a pixel signal from a pixel with a ramp signal and outputting a comparison signal. A measurement section starts counting in synchronism with the ramp signal and continues the counting until a signal supplied thereto reverses to measure comparison time. A comparator output controlling section interposed between the output of the comparison section and the input of the measurement section stops, if a pixel signal value exceeds a predetermined value determined based on a tanning phenomenon when the counting is started, the counting when the comparison signal is supplied to the measurement section to reverse the comparison signal, but supplies, if the pixel signal value does not exceed the predetermined value, a signal which is not reversed within a measurement period to the measurement section to continue the counting during the measurement period. | 01-12-2012 |
20120008033 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM - A solid-state image pickup device and a camera system in which: (1) counters are organized into a counter group and a memory group on a column-by-column basis; (2) in each column, the individual counters are cascade-connected between individual bits; (3) switches are provided at bit output portions of the individual counters; (4) connecting sides of the individual switches are commonly connected to a column-signal transfer line, and output sides of the switches are shared with the other individual bits; (5) inputs of memories (latch circuits), which store digital data for horizontal transfer, share the column-signal transfer line; and (6) outputs of the memories corresponding to the individual bits are connected via switches to data transfer signal lines wired so as to be orthogonal to the column-signal transfer line. | 01-12-2012 |
20120013780 | OPTICAL BLACK PIXEL CELL READOUT SYSTEMS AND METHODS - This is generally directed to systems and methods for reading optical black pixel cells. For example, in some embodiments, the columns of a pixel array can be shunted together during an optical black pixel readout phase of the imaging system. This may, for example, help improve correction of column fixed pattern noise or other noise. In some embodiments, the column may be shunted together during the optical black pixel readout phase of the imaging system and not shunted during other phases of the imaging system (e.g., when reading values from active pixel cells, barrier pixel cells, etc). In some embodiments, circuitry for providing the column shunting can be implemented as an independent block of the imaging system. In other embodiments, this circuitry can be implemented within other blocks of the imaging system. As an illustration, the shunting circuitry can be implemented within a VLN block of the imaging system. | 01-19-2012 |
20120019697 | Solid-state imaging device and camera system - A solid-state imaging device includes: a pixel section in which pixels performing photoelectric conversion are arranged in a matrix shape; and a pixel signal reading section that has an AD conversion section which reads pixel signals through pixel units from the pixel section and performs analog digital (AD) conversion. The pixel signal reading section includes comparators each of which compares a reference signal, which is a ramp wave, with read analog signal potentials of pixels in a corresponding column, counter latches each of which is disposed to correspond to each of the comparators, is able to count a comparison time of the corresponding comparator, stops the count when an output of the corresponding comparator is inverted, and retains a corresponding count value, and an adjustment section that performs offset adjustment on the reference signal for each row on which the AD conversion is performed. | 01-26-2012 |
20120019698 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM - Provided is a solid-state image pickup device including a pixel section arranged with multiple pixel circuits in matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state. | 01-26-2012 |
20120019699 | Solid-State Imaging Device - A trace control unit | 01-26-2012 |
20120033121 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a pixel that outputs a photoelectrically-converted pixel signal, a column ADC circuit that converts the pixel signal output from the pixel into a digital value, a test-signal generating unit that generates a test signal with which the column ADC circuit is tested, and a switching circuit that switches between the pixel signal output from the pixel and the test signal generated in the test-signal generating unit to input to the column ADC circuit are included. | 02-09-2012 |
20120038809 | DIFFERENTIAL COLUMN ADC ARCHITECTURES FOR CMOS IMAGE SENSOR APPLICATIONS - Circuits, methods, and apparatus that provide differential-input, single-slope, column-parallel analog-to-digital converter (ADC) architectures for use in high-resolution CMOS image sensors (CIS) are described. A column ADC is coupled with a column of a pixel array and configured to convert a pixel signal level to a corresponding digital output value according to a ramp generator output. Each pixel is configured to output a pixel reset level and a pixel signal level at different operating stages, and the ramp generator output includes a ramp reset level and a ramp signal level at the same or different at different operating stages. The pixel and ramp outputs are used to differentially drive a comparator stage of the column ADC, for example, to reduce power supply noise. | 02-16-2012 |
20120038810 | IMAGE CAPTURING APPARATUS - An image capturing apparatus includes: an image sensor including image sensing pixels that generate a signal for image generation, and focus detection pixels dividing the pupil region of an imaging lens into pupil regions and generating a signal for phase difference detection by photoelectrically converting object images from the pupil regions obtained by the division; a switching unit that switches between an all-pixel readout mode in which signals from all of the multiple pixels are read out and a thinning readout mode in which the signals of the multiple pixels are thinned and read out; and a control unit that, in the case where the mode has been switched by the switching unit to the thinning readout mode, controls the accumulation of charges in imaging rows used for image generation and focus detection rows including the focus detection pixels independent from each other. | 02-16-2012 |
20120038811 | METHODS FOR ENHANCING QUALITY OF PIXEL SENSOR IMAGE FRAMES FOR GLOBAL SHUTTER IMAGING - The image qualify of an image frame from a CMOS image sensor array operated in global shutter mode may be enhanced by dispersing or randomizing the noise introduced by leakage currents from floating drains among the rows of the image frame. Further, the image quality may be improved by accounting for time dependent changes in the output of dark pixels in dark pixel rows or dark pixel columns. In addition, voltage and time dependent changes in the output of dark pixels may also be measured to provide an accurate estimate of the noise introduced to the charge held in the floating drains. Such methods may be employed individually or in combination to improve the quality of the image. | 02-16-2012 |
20120044398 | CMOS SENSOR WITH LOW PARTITION NOISE AND LOW DISTURBANCE BETWEEN ADJACENT ROW CONTROL SIGNALS IN A PIXEL ARRAY - A CMOS image sensor includes a pixel array including a plurality of unit pixels with individual rows of unit pixels being coupled to respective row control signal lines, and a buffer including plural row control signal drivers. Each driver is coupled to a respective one of the row control signal lines and is configured to provide a row control signal pulse to a respective row control signal line in response to an input pulse when the row control signal line is in an active state and to bias the row control signal line at a ground voltage when the respective row control signal line is in an inactive state. Each driver has a first drive capability when the row control signal line is in the active state and a second drive capability greater than the first drive capability when the row control signal line is in an inactive state. | 02-23-2012 |
20120075514 | Hybrid Camera Sensor for Night Vision and Day Color Vision - A hybrid imaging array and method for using the same is disclosed. The image array includes a low-light imaging array and a color imaging array. The two imaging arrays can be utilized separately or in conjunction with one another. The low-light imaging array is optimized for night vision or situations in which the light levels are too low to allow a conventional color image to be formed by the color imaging array. The color imaging array is optimized for daylight or color photography. The low-light imaging array can be utilized in conjunction with the color imaging array to provide a color image with reduced noise. | 03-29-2012 |
20120081588 | PIXEL SENSOR CELL WITH HOLD NODE FOR LEAKAGE CANCELLATION AND METHODS OF MANUFACTURE AND DESIGN STRUCTURE - A reference pixel sensor cell (e.g., global shutter) with hold node for leakage cancellation, methods of manufacture and design structure is provided. A pixel array includes one or more reference pixel sensor cells dispersed locally throughout active light sensing regions. The one or more reference pixel sensor cells provides a reference signal used to correct for photon generated leakage signals which vary by locality within the active light sensing regions. | 04-05-2012 |
20120081589 | IMAGING DEVICE AND CAMERA SYSTEM - An imaging device includes: a pixel array section functioning as a light receiving section which includes photoelectric conversion devices and in which a plurality of pixels, which output electric signals when photons are incident, are disposed in an array; a sensing circuit section in which a plurality of sensing circuits, which receive the electric signals from the pixels and perform binary determination regarding whether or not there is an incidence of photons on the pixels in a predetermined period, are arrayed; and a determination result integration circuit section having a function of integrating a plurality of determination results of the sensing circuits for the respective pixels or for each pixel group, wherein the determination result integration circuit section derives the amount of photon incidence on the light receiving section by performing photon counting for integrating the plurality of determination results in the plurality of pixels. | 04-05-2012 |
20120086842 | SOLID-STATE IMAGE-PICKUP DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGE-PICKUP DEVICE, AND IMAGE-PICKUP APPARATUS - A CMOS image sensor in which column-parallel ADCs are mounted. Reference voltages Vref | 04-12-2012 |
20120086843 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 04-12-2012 |
20120086844 | CIRCUIT AND PHOTO SENSOR OVERLAP FOR BACKSIDE ILLUMINATION IMAGE SENSOR - A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel. | 04-12-2012 |
20120092540 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a voltage supply circuit configured to supply a voltage to load MOS transistors provided to vertical output lines and columnar signal-processing circuits. The voltage supply circuit includes a first amplifier circuit configured to amplify a predetermined voltage supplied to an input part thereof from a voltage generator and to output an amplified voltage to a voltage supply wire, and a sample-and-hold circuit including a sampling switch provided on a path between the voltage generator and the input part and a hold capacitor configured to hold the voltage sampled by the sampling switch. | 04-19-2012 |
20120099011 | CMOS IMAGER WITH INTEGRATED CIRCUITRY - A CMOS imager is integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. Integrating a CMOS imager and peripheral circuitry allows for a single chip image sensing device. | 04-26-2012 |
20120105698 | SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM - A MOS type solid state imaging device having unit pixels, each having a photodiode a transfer transistor for transferring the signal of the photodiode to a floating node, an amplifier transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node. A gate voltage of the reset transistor is controlled by three values of a power source potential (for example 3V), a ground potential (0V), and a negative power source potential (for example −1V). | 05-03-2012 |
20120113306 | IMAGE SENSOR WITH PIPELINED COLUMN ANALOG-TO-DIGITAL CONVERTERS - An image sensor includes a plurality of pixel cells organized into rows and columns of a pixel array. A bit line is coupled to each of the pixel cells within a line of the pixel array. Readout circuitry is coupled to the bit line to readout the image data from the pixel cells within the line. The readout circuitry includes a line amplifier coupled to the bit line to amplify the image data and first and second sample and convert circuits coupled in parallel to an output of the line amplifier to reciprocally and contemporaneously sample the image data and convert the image data from analog values to digital values. | 05-10-2012 |
20120120294 | Solid-state imaging device and electronic apparatus - An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate. | 05-17-2012 |
20120120295 | IMAGE SENSOR, DATA OUTPUT METHOD, IMAGE PICKUP DEVICE, AND CAMERA - An image sensor includes: a pixel array block configured to get image data by photoelectrically converting light; a register group configured to store information associated with processing of the image sensor; and a parallel interface configured to output the image data to outside in parallel output; wherein the parallel interface further outputs a register value group stored in the register group to outside when the image data is not being outputted to outside. | 05-17-2012 |
20120127355 | DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS AND SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a pixel portion including a plurality of pixels, wherein each pixel including a photoelectric conversion portion, an accumulation portion for accumulating the charge, a first transfer portion connecting the photoelectric conversion portion to the accumulation portion, a second transfer portion connecting the accumulation portion to a floating diffusion portion, and a third transfer portion connecting the photoelectric conversion portion to a power source, and wherein, from a state where no potential barrier is formed in the second transfer portion, a potential barrier is formed in the second transfer portion under a condition that a potential barrier is formed in the first transfer portion and no potential barrier is formed in the third transfer portion, and then a potential barrier is formed in the third transfer portion, thereby the operation of accumulating charges in the pixels is started. | 05-24-2012 |
20120133812 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid state imaging apparatus of less fixed pattern noises and less shading comprises an imaging area wherein a plurality of pixel circuits are arranged in two dimensionally, and each of the pixel circuits includes a plurality of photoelectric conversion elements each for generating an electric charge by a photoelectric conversion and for accumulating the electric charge, a single floating diffusion portion for accumulating the charge, a plurality of transfer switches for transferring the electric charges respectively from the plurality of photoelectric conversion elements to the single floating diffusion portion and an amplifying transistor for amplifying a voltage corresponding to the electric charge accumulated by the floating diffusion portion, wherein the plurality of transfer switches transfers the electric charges from the plurality of photoelectric conversion elements sequentially to the floating diffusion portion while maintaining the amplifying transistors at the activation state. | 05-31-2012 |
20120140101 | WAFER LEVEL CAMERA MODULE WITH ACTIVE OPTICAL ELEMENT - A wafer level camera module can be easily connected to a host device via mounting surface contacts. The module includes an electrically controllable active optical element and a flexible printed circuit that provides electrical connection between the optical element and surface conductors on a mounting surface of the module. The surface conductors can be a group of solder balls, and the module can have another group of solder balls that make connection to another electrical component of the module, such as an image sensor. All of the solder balls can be coplanar in a predetermined grid pattern, and all of the components of the device can be surrounded by a housing such that the camera module is an easily mounted ball grid array type package. | 06-07-2012 |
20120154655 | SUSPENDING COLUMN ADDRESSING IN IMAGE SENSORS - An image sensor includes a two-dimensional array of pixels having multiple column outputs and an output circuit connected to each column output. Each output circuit is configured to operate concurrent sample and read operations. A timing generator outputs a column address sequence that is received by a column decoder that is electrically connected to each output circuit. The timing generator suspends the output of the column address sequence during a sample operation and resumes the output of the column address sequence at the end of the sample operation. | 06-21-2012 |
20120154656 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - A solid-state imaging element is disclosed which includes: a pixel array portion configured to have a plurality of unit pixels arrayed two-dimensionally, the unit pixels being furnished with a photoelectric conversion portion, a transfer section, and a reset section, the transfer section being configured to transfer electrical charges accumulated in the photoelectric conversion portion to a charge retention portion, the reset section being configured to reset the electrical charges of the charge retention portion; and a drive control section configured to control the driving of the unit pixels; wherein the drive control section controls the driving of the unit pixels in such a manner that prior to the charge transfer by the transfer section, the reset section resets the electrical charges of the charge retention portion in increments of a plurality of rows of the unit pixels, the plurality of rows being not adjacent to one another. | 06-21-2012 |
20120154657 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device including a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode with an insulating film therebetween; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode. | 06-21-2012 |
20120188430 | IMAGER PIXEL ARCHITECTURE WITH ENHANCED COLUMN DISCHARGE AND METHOD OF OPERATION - A pixel circuit includes a photosensor and a floating diffusion node. A circuit is coupled to the floating diffusion node, for selectively providing a pixel output signal to a column line. A reset circuit, which resets the floating diffusion node, is configured to be activated by the column line. A pullup circuit is included for controlling the reset circuit through a signal on the column line. A discharge circuit, which is separate from the reset circuit, is used for discharging the pixel output signal on the column line. The discharge circuit includes a transistor having a first source/drain terminal coupled to the column line and a second source/drain terminal coupled to a fixed voltage level. The gate of the transistor activates the discharging of the column line. | 07-26-2012 |
20120194722 | DYNAMIC RANGE EXTENSION FOR CMOS IMAGE SENSORS FOR MOBILE APPLICATIONS - Aspects of the invention provide dynamic range extension for CMOS image sensors for mobile applications. An embodiment of the invention may comprise setting for each pixel in a pixel array one of a plurality of integration times and one of a plurality of signal gains, wherein the settings may be used to generate corresponding digital data for each pixel in the pixel array. The corresponding digital data for adjacent pixels for the same color plane may then be grouped into a superpixel, where each pixel has associated with it a different combination of integration time and signal gain. | 08-02-2012 |
20120194723 | SOLID STATE IMAGE CAPTURE DEVICE AND CAMERA SYSTEM - A solid-state image capture device includes: a pixel section in which pixels are arranged in a matrix; control lines; a pixel drive section that performs control, through the control lines, an operation of the pixels so as to perform a shutter operation of the pixel section and so as to perform reading; a reading circuit that reads signals from the pixels; and a shutter-mode switching section that controls an operation of the pixel drive section in accordance with a rolling shutter system in which exposure is performed for each row or a global shutter system in which exposure is simultaneously performed on all the pixels. The pixel drive section includes a shutter-mode corresponding section that causes an impedance value from the control lines to a power supply in a global shutter operation to be greater than an impedance value in a rolling shutter operation. | 08-02-2012 |
20120206635 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD AND ELECTRONIC EQUIPMENT - Disclosed herein is an image processing apparatus including: a storage section configured to store a correction matrix correcting crosstalk generated by a light or electron leak from an adjacent pixel existing among a plurality of pixels for receiving light in an imaging device; and a processing section configured to carry out processing to apply the correction matrix stored in the storage section to an image signal generated by the imaging device for each of the pixels. | 08-16-2012 |
20120224089 | SOLID STATE IMAGING APPARATUS - While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires. | 09-06-2012 |
20120224090 | SOLID-STATE IMAGING DEVICE, CAMERA, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings. | 09-06-2012 |
20120229684 | IMAGE SENSOR WITH RAISED PHOTOSENSITIVE ELEMENTS - An image sensor having a pixel array comprises periphery elements formed over a substrate, an oxide layer formed over the periphery elements, an epitaxial layer formed in an opening in the oxide layer in a pixel array area, and a plurality of photosensitive elements of the pixel array formed in the epitaxial layer. Formation of an initial metallization layer occurs after the formation of the photosensitive elements in the epitaxial layer. The photosensitive elements can thus be formed in the epitaxial layer at a higher level within an image sensor stack than that of the initial metallization layer. This advantageously allows stack height and pixel size to be reduced, and fill factor to be increased. The image sensor may be implemented in a digital camera or other type of digital imaging device. | 09-13-2012 |
20120249851 | ECLIPSE DETECTION USING DOUBLE RESET SAMPLING FOR COLUMN PARALLEL ADC - An imager includes a column line connected to a pixel array for providing a pixel output signal. The pixel output signal is sampled during reset and readout phases. An analog-to-digital converter (ADC), which is coupled to the column line, samples the pixel output signal and provides a digital output signal. The ADC is configured to sample the pixel output signal twice, during the reset phase, in order to detect eclipse in the pixel output signal. The ADC includes a comparator, sequentially operated by a reset control, for comparing a first pixel output voltage and a second pixel output voltage, respectively, during the reset phase. The comparator is configured to provide an output bit indicating detection of an eclipse, based on a difference between the first and second pixel output voltages. | 10-04-2012 |
20120268637 | CAPTURING REFLECTED LIGHT FROM A SAMPLING SURFACE - A mechanism is disclosed for capturing reflected rays from a surface. A first and second lens aligned along a same optical center axis are configured so that a beam of light collimated parallel to the lens center axis directed to a first side, is converged toward the lens center axis on a second side. A first light beam source between the first and second lenses directs a light beam toward the first lens parallel to the optical center axis. Second light beam source(s) on the second side of the first lens, direct a light beam toward a focal plane of the first lens at a desired angle. An image capturing component, at the second side of the second lens, has an image capture surface directed toward the second lens to capture images of the light reflected from a sample capture surface at the focal plane of the first lens. | 10-25-2012 |
20120300106 | SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate. | 11-29-2012 |
20120327282 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device including a photoelectric conversion portion, plural signal lines including a transfer signal line to which a transfer signal for reading signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting desired signals into the plural signal lines, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of is input to the signal line adjacent to the transfer signal line. | 12-27-2012 |
20130016264 | SOLID-STATE IMAGE SENSING APPARATUSAANM Ono; ToshiakiAACI Ebina-shiAACO JPAAGP Ono; Toshiaki Ebina-shi JP - A solid-state image sensing apparatus, comprising, a pixel portion, a conversion portion including a first group and a second group each of which includes at least one analog/digital conversion unit to convert an analog signal of the pixel portion into a digital signal, and a clock supply unit including a first clock buffer and a second clock buffer connected in series for propagation of a clock signal, wherein each of the analog/digital conversion units includes a comparison unit and a counter unit, the comparison unit compares the analog signal with a comparison reference potential, the counter unit measures a time from the start of the comparison to the change of the comparison result, each of the first clock buffer and the second clock buffer corrects a duty ratio of a clock signal by using a differential circuit. | 01-17-2013 |
20130016265 | QUAD-CORE IMAGE PROCESSOR FOR FACIAL DETECTION - A quad-core processor for a hand held device with a CMOS image sensor to capture a scene. The quad-core processor has an image sensor interface for receiving data from the CMOS image sensor and four processing units for simultaneously processing the data. The image sensor and the four processing units being incorporated onto a single chip and the processing units are configured to detect faces within the scene. | 01-17-2013 |
20130021511 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read. | 01-24-2013 |
20130033632 | IMAGE PICKUP DEVICE THAT IS PROVIDED WITH PERIPHERAL CIRCUITS TO PREVENT CHIP AREA FROM BEING INCREASED, AND IMAGE PICKUP APPARATUS - An image pickup device which suppresses an increase in chip area of peripheral circuits without degrading the performance of a pixel section and makes it possible to prevent costs from being increased. The image pickup device includes a first semiconductor substrate and a second semiconductor substrate. A pixel section includes photo diodes each for generate electric charges by photoelectric conversion, floating diffusions each for temporarily storing the electric charges generated by the photo diode, and amplifiers each connected to the floating diffusion, for outputting a signal dependent on a potential of the associated floating diffusion. Column circuits are connected to vertical signal lines, respectively, for performing predetermined processing on signals output from the pixel section to vertical signal lines. | 02-07-2013 |
20130050553 | IMAGE SENSOR HAVING A SAMPLER ARRAY - The invention relates to an image sensor with N rows of P active photosensitive pixels using MOS technology. The sensor comprises digitizing circuits organized with N rows of P processing circuits, each processing circuit of row rank i and of column rank j comprising a respective sampler for carrying out a correlated double sampling of the signals present on a column conductor of rank j and corresponding to the observation of an image dot over the same integration time for all the rows, and an analog-digital conversion means in order to supply digital values of the analog signals sampled. The sensor is particularly suited to operating in TDI (image scanning and integration) mode. | 02-28-2013 |
20130063641 | DUAL-SIDED IMAGE SENSOR - An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions. | 03-14-2013 |
20130063642 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD FOR IMAGE CAPTURING APPARATUS - An image capturing apparatus comprises an optical system, an image sensor having pixels each including a plurality of photoelectric converters capable of outputting image signals independently, a driving unit which controls driving of the image sensor, a focus detection unit, and an addition unit which adds the output image signals on a per-pixel basis. In each pixel, the photoelectric converters are divided into groups each including at least two photoelectric converters and a charge accumulation period for one group is delayed from and partially overlaps a charge accumulation period for another. The driving unit drives the image sensor so that image signals are read from the groups in turn, and the focus detection unit detects a focus state using a phase difference method based on the read image signals independently output from the photoelectric converters. | 03-14-2013 |
20130076950 | IMAGE MATCHING, DATA COMPRESSION AND TRACKING ARCHITECTURES - Integrated photo detector receptor with Memristor Memory cell to perform simultaneous image capture and image matching as part of meta-security camera. | 03-28-2013 |
20130076951 | IMAGING ELEMENT, IMAGE PICKUP APPARATUS, MANUFACTURING APPARATUS AND MANUFACTURING METHOD - There is provided an imaging element including a transmission channel region provided in an optical black pixel region shielded from light from an outside of a semiconductor substrate by a light shielding film, for transmitting a charge existing inside the semiconductor substrate of the optical black pixel region to an outside of the optical black pixel region. | 03-28-2013 |
20130076952 | CMOS Image Sensor, Timing Control Method and Exposure Method Thereof - The invention discloses a CMOS image sensor, a timing control method and an exposure method thereof. The image sensor includes a pixel array composed of multiple pixel rows and a control chip controlling the array. The control chip controls each pixel row to expose in the exposure time during one exposure period of the pixel row, and then wait predetermined time after the exposure time to output data. In the invention, the exposure time of the image sensor is separated from the time of outputting data. Therefore, the working mode of the image sensor can be controlled more flexibly. By the manner of controlling the pixel rows in the sub-array of the image sensor to expose synchronously, the flash time of the light source is the same as the exposure time of each single sub-array, thereby improving the utilization efficiency of the source energy and ensuring real-time image sampling. | 03-28-2013 |
20130083227 | SOLID-STATE IMAGE CAPTURING ELEMENT AND METHOD FOR DRIVING SOLID-STATE IMAGE CAPTURING ELEMENT - A solid-state image capturing element includes: a plurality of pixels arranged in rows and columns, each of which outputs an electric signal corresponding to an amount of received light; a plurality of column signal lines each of which is disposed for a corresponding one of columns of the pixels and sequentially transfers the electric signal provided from the corresponding one of the columns of the pixels; and a plurality of holding circuits each of which is disposed for a corresponding one of the column signal lines and holds the electric signal transferred via the corresponding one of the column signal lines. Each of the holding circuits includes a circuit element including an input capacitance, and holds the electric signal in the input capacitance. | 04-04-2013 |
20130088628 | SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM - A solid-state imaging device includes a plurality of pixels arranged in a matrix, a plurality of readout circuits provided in each column of the plurality of pixels arranged in a matrix, configured to read out for each column a signal of the plurality of pixels, a plurality of comparison units configured to compare a signal output from the plurality of readout circuits with a reference signal whose level changes with time, a counter configured to perform a count operation from when the level of the reference signal starts to change, first and second buffers each configured to buffer a count value of the counter, and a plurality of storing units connected to the plurality of comparison units, configured to store a count value of the counter when a magnitude relation between a signal output from the plurality of the readout circuits and the reference signal is inverted. | 04-11-2013 |
20130093934 | A/D CONVERTER, SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - An A/D converter includes: plural comparators to which reference voltages as ramp waves different from each other are supplied, which are configured to compare the supplied reference voltages with an analog input signal; and plural latches arranged so as to correspond to the plural comparators, which are configured to count comparison time of the corresponding comparators, to stop counting when an outputs of the comparator is inverted and to store the count value, wherein the plural reference voltages are offset by an arbitrary voltage at the same time point. | 04-18-2013 |
20130107096 | SCANNING CIRCUIT, SOLID-STATE IMAGE SENSOR, AND CAMERA | 05-02-2013 |
20130107097 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130113969 | METHOD, APPARATUS AND SYSTEM FOR PROVIDING IMPROVED FULL WELL CAPACITY IN AN IMAGE SENSOR PIXEL - Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle. | 05-09-2013 |
20130113970 | METHOD FOR STROBOSCOPICALLY EXAMINING REPEATING PROCESSES AND ARRANGEMENT FOR PERFORMING SAID METHOD - Apparatus for examining vocal folds and a method for operating said arrangement that avoid the large fluctuations in the image brightness of the camera system and thus the flickering, which is unpleasant for the user, is provided. The apparatus comprises a stroboscopic light source, a camera control unit having a camera head, a microphone, an optical waveguide, and an optical assembly, wherein the stroboscopic light source has a signal-conducting connection to the camera control unit, and the camera head is placed on the optical assembly, wherein the camera head and the microphone have signal-conducting connections to the camera control unit, and the optical assembly is connected to the light source by means of the optical waveguide. | 05-09-2013 |
20130113971 | SOLID-STATE IMAGE SENSOR AND IMAGE CAPTURE DEVICE INCLUDING THE SENSOR - In an embodiment, an image sensor includes pixels arranged in columns and rows, read signal lines connected to pixels arranged in the row direction. Each pixel is read in either a first exposure time or in a second exposure time shorter than the first exposure time. Each of a first type of read signal lines is connected to a group of pixels associated with the first exposure time, and each of a second type of read signal lines is connected to a group of pixels associated with the second exposure time. In two vertically adjacent horizontal pixel lines, the first type of read signal line is shared by two horizontally adjacent pixels associated with the first exposure time, and the second type of read signal line is shared by two horizontally adjacent pixels associated with the second exposure time. | 05-09-2013 |
20130113972 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND05-09-2013 | |
20130120626 | CMOS IMAGE SENSOR WITH SHARED MULTIPLEXER AND METHOD OF OPERATING THE SAME - A CMOS image sensor includes a pixel array unit, a row selection unit, and a logic circuit. The pixel array unit is used for sensing an object. The pixel array unit includes M pixels and P multiplexers and each of the M pixels is electrically connected to one of the P multiplexers, wherein M is a positive integer and P is a positive integer smaller than M. The row selection unit and the logic circuit are electrically connected to the P multiplexers. The row selection unit is used for generating a row selection signal. The logic circuit is used for determining a sensing region corresponding to the object wherein the sensing region includes N of the M pixels. Furthermore, the logic circuit controls Q multiplexers, which are electrically connected to the N pixels, to transmit the row selection signal to the N pixels. | 05-16-2013 |
20130128088 | SOLID-STATE IMAGE PICKUP ELEMENT AND CAMERA SYSTEM HAVING MECHANISM FOR CANCELING POTENTIAL DROP ON SIGNAL LINE - A pixel driving portion | 05-23-2013 |
20130128089 | VERTICAL 4-WAY SHARED PIXEL IN A SINGLE COLUMN WITH INTERNAL RESET AND NO ROW SELECT - A method and apparatus for reducing space and pixel circuit complexity by using a 4-way shared vertically aligned pixels in a same column. The at least four pixels in the pixel circuit share a reset transistor and a source follower transistor, can have a plurality of same colored pixels and a plurality of colors, but do not include a row select transistor. | 05-23-2013 |
20130135503 | AMPLIFIER APPARATUS AND METHODS USING VARIABLE CAPACITANCE DEPENDENT ON FEEDBACK GAIN - An apparatus includes an operational amplifier circuit comprising at least one operational amplifier and a feedback circuit coupled between the output terminal and input terminal of the operational amplifier circuit and configured to apply a feedback gain to an output signal at the output of the first operational amplifier. The apparatus further includes a variable compensation capacitor coupled to the output terminal of the operational amplifier circuit and configured to vary a capacitance thereof responsive to the feedback gain. | 05-30-2013 |
20130141621 | IMAGING APPARATUS - An imaging apparatus, which includes an imaging device having a plurality of image sensors, is configured to receive light incident on the imaging device, obtain an output voltage based the received light, and generate an image based on the output voltage. The plurality of image sensors have an aperture pixel region that accumulates and outputs the charges generated based on the incident light and a shielded optical black region. The imaging device performs a skipping operation for arbitrarily and non-sequentially selecting a read row. By performing an offset correction of a step amount produced during the non-sequential reading due to the skip operation, the step resulting from the skip reading can be corrected. | 06-06-2013 |
20130147999 | A/D CONVERSION CIRCUIT, SOLID-STATE IMAGE SENSOR, AND CAMERA SYSTEM - An A/D conversion circuit in which a counter is made to be capable of performing counting at both edges of a clock, up/down count values can be switched while the up/down count values are held, and the duty of the counting operation is difficult to be distorted even with the both-edge counting, a solid-state image sensor, and a camera system. | 06-13-2013 |
20130148000 | SOLID-STATE IMAGING DEVICE - The MOS solid-state imaging device includes: pixels arrayed two-dimensionally; first column signal lines; first holding circuit units each of which corresponds to one of the first column signal lines and holds electrical signals that are transmitted from the pixels through one of the first column signal lines; and first difference circuit units that each output a difference between one of the electrical signals in the reset state and one of the electrical signals in the light-received state that are held by one of the first holding circuit units, in which the first holding circuit units each include pixel-wise holding circuits, the number of which is identical to the number of the pixels provided for the corresponding one of the first column signal lines, the pixel-wise holding circuits being able to hold electrical signals in the reset state of the pixels and electrical signals in the light-received state of the pixels. | 06-13-2013 |
20130188078 | IMAGE SENSOR, OPERATING METHOD THEREOF, AND PORTABLE DEVICE HAVING THE SAME - An image sensor includes a photo detector for accumulating charges in response to an incident light, a storage unit for storing the charges, a first transmission gate for transmitting the charges from the photo detector to the storage unit, a second transmission gate for transmitting the charges from the storage unit to the floating diffusion node, a reset gate for resetting the floating diffusion node in response a reset gate signal, and a coupling circuit connected between the reset gate and the storage unit. | 07-25-2013 |
20130188079 | SOLID-STATE IMAGE SENSOR, SIGNAL PROCESSING METHOD AND ELECTRONIC APPARATUS - There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s). | 07-25-2013 |
20130194471 | SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM - Provided is a solid-state image sensor including a pixel array portion formed from a two-dimensional array of ordinary imaging pixels each having a photoelectric conversion unit and configured to output an electric signal obtained through photoelectric conversion as a pixel signal, and focus detection pixels for detecting focus. The focus detection pixels include at least a first focus detection pixel and a second focus detection pixel each having a photoelectric conversion unit and configured to transfer and output an electric signal obtained through photoelectric conversion to an output node. The first focus detection pixel and the second focus detection pixel share the output node. The first focus detection pixel includes a first photoelectric conversion unit, and a first transfer gate for reading out an electron generated through photoelectric conversion in the first photoelectric conversion unit to the shared output node. | 08-01-2013 |
20130194472 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC DEVICE - There is provided a solid-state image pickup device including a pixel area in which a plurality of pixels are arranged. The pixels include an accumulation section accumulating a charge acquired by photoelectric conversion, a plurality of detection sections detecting the charge accumulated in the accumulation section, a connection separation control section controlling connection or separation of the detection sections, an output section outputting a first signal corresponding to a potential of each detection section in a separation state in which the connection separation control section separates the detection sections, or outputting a second signal corresponding to a potential of each detection section in a connection state in which the connection separation control section connects the detection sections, and an output selection section selecting whether to output the first signal from the output section or output the second signal from the output section, based on a value of the first signal. | 08-01-2013 |
20130194473 | SOLID-STATE IMAGE PICKUP APPARATUS AND METHOD OF PRODUCING THE SAME - In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 μm or less from an end, on a side of the floating diffusion region, of the gate electrode. | 08-01-2013 |
20130194474 | SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND DRIVING METHOD OF THE SOLID-STATE IMAGE PICKUP APPARATUS - An apparatus includes a pixel array in which pixels for outputting an analog signal are arranged in a matrix, vertical output lines each of which is connected to pixels in a same column, A/D conversion units, which are individually connected to the vertical output lines, for converting the analog signal into a digital signal, and a constant current supply unit for supplying a constant current to the A/D conversion units. Each of the A/D conversion units includes an integration unit for integrating the constant current, a comparison unit for comparing the integrated constant current with the analog signal and outputting a comparison signal, and a digital signal storage unit for storing a digital signal corresponding to the comparison signal. The integration unit includes an input capacitor for receiving the constant current. The comparison unit is connected to the constant current supply unit via the input capacitor. | 08-01-2013 |
20130201375 | A/D CONVERTER, SOLID-STATE IMAGE SENSING DEVICE, AND CAMERA SYSTEM - An A/D converter includes: a first comparator that compares an input signal, with a first reference signal which is a ramp wave having a predetermined polarity, and that when the input signal matches the first reference signal, reverses an output signal thereof; a second comparator that compares the input signal, with a second reference signal which is a ramp wave having a different polarity from the first reference signal, and that when the input signal matches the second reference signal, reverses an output signal thereof; and a counter capable of counting up so as to measure the comparison times taken by the first comparator and second comparator, wherein when either of the output signal of the first comparator and the output signal of the second comparator is first reversed, the counter ceases a counting action. | 08-08-2013 |
20130201376 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD AS WELL AS ELECTRONIC APPARATUS - A solid-state imaging device includes first and second sets of pixels. The first pixels have light reception elements and a discharging unit that discharges charge corresponding to light received by the first pixels. The second pixels have corresponding light reception elements but are covered with a light shielding film. Signals stored in the second light reception elements are read to a next stage when the discharging units corresponding to the first light reception elements are enabled. | 08-08-2013 |
20130208161 | Portable Magnifying Apparatus Having Multi Angular Positioned Handle - Provided is a portable magnifying apparatus that can be easily carried around. More particularly, provided is a portable magnifying apparatus which is conveniently used for users either left-handed or right-handed and has a multi angular positioned handle that can be manipulated without putting strain on the wrist. | 08-15-2013 |
20130208162 | DRIVING METHOD OF SOLID-STATE IMAGING APPARATUS AND CAMERA SYSTEM - Provided is a method of driving a solid-state imaging apparatus including discharging a signal charge from a photoelectric transducer, by turning on a transfer section and turning on a reset section, at a first timing, in a shutter operation for starting an accumulation of the signal charge for the photoelectric transducer while a selection section is turned off, boosting a floating diffusion section, by turning on the transfer section and turning off the reset section, at a second timing which follows the first timing and taking in an electric signal output to an output signal line by a peripheral circuit section, in a state in which the transfer section is turned on, and generating a pixel signal from the taken in signal. | 08-15-2013 |
20130215308 | SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device is configured such that a first voltage is applied to a first conductivity type semiconductor region and a second voltage is applied to source-drain regions having a second conductivity type of the MOS capacitance to apply inverse bias between the semiconductor region and the source-drain regions of the MOS capacitance. | 08-22-2013 |
20130215309 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND CAMERA SYSTEM - There is provided a solid-state imaging device including a pixel part obtained by arranging a plurality of pixels performing photoelectric conversion, and a pixel signal readout part including a logic part and reading out a pixel signal from the pixel part, wherein the pixel part and the logic part are formed as a layered structure, wherein the layered structure includes a low hardness layer at least lower in hardness than another layer out of a plurality of layers, and wherein a dividing part different from the other layer is formed in a side portion of the low hardness layer. | 08-22-2013 |
20130215310 | METHOD FOR DRIVING PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a plurality of pixels arranged in a matrix, each pixel including a photoelectric conversion unit, first and second holding units that hold electric charge, a first transfer unit that connects the photoelectric conversion unit and the first holding unit, a second transfer unit that connects the first and second holding units, and a third transfer unit that connects the photoelectric conversion unit and a power supply, each pixel is controlled so that the potential of the third transfer unit for electric charge held in the photoelectric conversion unit is higher than that of the first transfer unit at least during a charge accumulation period of the pixel, and thereafter, the potential of the third transfer unit is higher than that of the photoelectric conversion unit while the potentials of the first and second transfer units are lower than that of the photoelectric conversion unit. | 08-22-2013 |
20130215311 | CAMERA DEVICE, ELECTRONIC APPARATUS AND FLEXIBLE CHASSIS - A camera device includes: a metal panel to be grounded; a main board on which a CMOS imaging device is mounted; a sub board having a ground plane obtained by leading out a ground pattern of the main board through a flexible portion and mounting the led-out ground pattern, which is connected to the main board through the flexible portion; and a metal support plate one surface of which is fixed to the main board through an adhesive layer, wherein the ground plane of the sub board is connected to the other surface of the support plate by bending the flexible plate, which electrically connects the ground pattern of the main board to the panel through the support plate to be grounded. | 08-22-2013 |
20130222662 | IMAGING DEVICE, IMAGING SYSTEM, AND METHOD FOR DRIVING IMAGING DEVICE - Conventionally, in order to obtain a difference signal between an A+N signal and an N signal and a difference signal between an A+B+N signal and the A+N signal, the A+N signal needs to be held in two different capacitors. Hence, there is a problem in that, due to variations in capacitance of the two capacitors, the difference signal between the A+N signal and the N signal and the difference signal between the A+B+N signal and the A+N signal may not accurately be obtained. An imaging device generates a signal obtained by subtracting the same digital N signal from each of the digital A+N signal and the digital A+B+N signal. | 08-29-2013 |
20130229560 | SOLID-STATE IMAGE-PICKUP DEVICE, IMAGE-PICKUP DEVICE, AND SIGNAL READING METHOD - A solid-state image pickup device according to one aspect of the present invention includes, but is not limited to: first and second substrates on which circuit elements constituting a pixel; a coupler electrically coupling the first and second substrates; a first photoelectric conversion element on the first substrate; a first amplifier circuit on the first substrate; a first storing unit on the second substrate; and an output circuit on the second substrate. The first photoelectric conversion element performs photoelectric conversion on a first incident light to generate a first signal. The first amplifier circuit is coupled in series to the first photoelectric conversion element. The first amplifier circuit amplifies the first signal to generate a first amplified signal and output the first amplified signal to the coupler. The first storing unit stores the first amplified signal. The output circuit sequentially outputs the first amplified signal stored. | 09-05-2013 |
20130235242 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD, AND ELECTRONIC APPARATUS - Disclosed is a solid-state imaging device including a pixel array, two vertical scanning circuits, and a control part. The pixel array has a plurality of pixels arranged in a two-dimensional matrix form. The two vertical scanning circuits are configured to sequentially select and scan each of the pixels in a vertical direction per row. The control part is configured to generate, based on a mode signal corresponding to an imaging mode, a driving switch signal to stop driving of one of the two vertical scanning circuits. | 09-12-2013 |
20130235243 | SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC APPARATUS - A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region. | 09-12-2013 |
20130235244 | IMAGE PICKUP DEVICE AND SIGNAL PROCESSING METHOD THEREOF - An image pickup device is provided, capable of complete correction with data of once analog-to-digital conversion, and prevention of excess use of switches and analog devices and/or erroneous correction, including: an image sensor having a plurality of analog-to-digital converters determining conversion results from a digital signal of higher order bit through separate steps of two or more times; a first correction unit which has a correction factor for correcting nonlinear errors of the plurality of analog-to-digital converters so as to adapt to the analog-to-digital converters and corrects a nonlinear error of a digital signal output from respective analog-to-digital converters based on a correction factor corresponding to respective analog-to-digital converters, characterized in that the first correction unit corrects the nonlinear errors after converting the digital signals from the plurality of analog-to-digital converters into a serial output. | 09-12-2013 |
20130242155 | Back Side Illuminated Image Sensor Architecture, And Method Of Making Same - An image sensor device that includes a substrate and a plurality of color filters. The substrate includes a plurality of photo detectors (wherein a first portion of the plurality of photo detectors each has a lateral size that is smaller than that of each of a second portion of the plurality of photo detectors) and a plurality of contact pads which are electrically coupled to the photo detectors. The plurality of color filters are each disposed over one of the photo detectors. The plurality of photo detectors are configured to produce electronic signals in response to light incident through the color filters. A third portion of the plurality of photo detectors are laterally disposed between the first and second portions of the photo detectors, and each having a lateral size between those of the first and second portions of the photo detectors. | 09-19-2013 |
20130250152 | IMAGING DEVICE - An imaging device includes a plurality of first pixels, each of which outputs a first pixel signal, a plurality of second pixels, each of which outputs a second pixel signal, a ramp wave generator that outputs a ramp signal that monotonously increases or monotonously decreases over time, a phase shift pulse generator that outputs first to n-th phase shift pulse signals, a first pixel latch group that latches the first to n-th phase shift pulse signals when the first pixel signal and the ramp signal have a predetermined relationship, a second pixel latch group that latches the first to n-th phase shift pulse signals when the second pixel signal and the ramp signal have the predetermined relationship, first to n-th power source lines to supply a power source and first to n-th phase shift pulse supply lines to supply the phase shift pulses. | 09-26-2013 |
20130250153 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATELY ARRANGED PIXEL COMBINATIONS - A solid-state imaging device includes: photodiodes formed for pixels arranged on a light sensing surface of a semiconductor substrate; a signal reading unit formed on the semiconductor substrate to read a signal charge or a voltage; an insulating film formed on the semiconductor substrate and including optical waveguides; color filters formed on the insulating film; and on-chip lenses formed on the color filters. The first and second pixel combinations are alternately arranged both in the horizontal and vertical directions, the first pixel combination having a layout in which two green pixels are arranged both in the horizontal and vertical directions and a total of four pixels are arranged, the second pixel combination having a layout in which two pixels are arranged both in the horizontal and vertical directions, a total of four pixels are arranged, and two red pixels and two blue pixels are arranged cater cornered. | 09-26-2013 |
20130258152 | CAMERA DEVICE FOR ACQUIRING STEREO IMAGES WITH ONE SENSOR - A camera device for acquiring stereo images with one sensor is provided. The camera comprises: two apertures in a housing of the camera device, the two apertures separated by a human interocular distance; a sensor for sequentially acquiring electronic images from each of the two apertures; at least one minor enabled to change state for sequentially directing light from each of the two apertures to the sensor; and a controller for synchronizing the sensor with the state of the at least one mirror such that a first electronic image is acquired at the sensor from a first one of the two apertures when the at least one mirror is in a first state and a second electronic image is acquired at the sensor from the other of the two apertures when the at least one minor is in a second state. | 10-03-2013 |
20130258153 | Hybrid CCD-CMOS Camera Adapted for Forming Images of Moving Scenes - A camera adapted for taking pictures of a moving scene is disclosed. The camera includes an imaging array, a plurality of charge-coupled device (CCD) shift registers, and a controller. The imaging array includes a plurality of CMOS pixel sensors organized as a plurality of columns and rows. The image moves in the column direction. One CCD shift register corresponds to each of the columns. Each CMOS pixel sensor includes a first transfer gate that transfers charge accumulated in the pixel sensor to a corresponding cell in the CCD shift register. The controller controls the CCD shift registers such that charge stored in a first cell in a CCD shift register is moved to a second cell in the CCD shift register where the charge is combined with charge accumulated by the pixel sensor that is connected to the second cell, the combined charge being generated from the same image pixel. | 10-03-2013 |
20130258154 | SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS - A solid-state imaging element includes a light receiving unit formed on a semiconductor base, and an anti-reflection film formed on the light receiving unit. The anti-reflection film has a plurality of planar layers whose planar layer in an upper layer is narrower than the planar layer in a lower layer. | 10-03-2013 |
20130258155 | IMAGE PICKUP APPARATUS INCLUDING IMAGE PICKUP ELEMENT HAVING IMAGE PICKUP PIXEL AND FOCUS DETECTION PIXEL AND SIGNAL PROCESSING METHOD - An image pickup apparatus | 10-03-2013 |
20130258156 | SOLID-STATE IMAGE SENSOR, DRIVING METHOD AND ELECTRONIC APPARATUS - There is provided a solid-state image sensor including a pixel region in which a plurality of pixels of a preset plurality of colors are arranged in a two-dimensional matrix shape, a vertical signal line corresponding to a pixel column of the pixel region, a trigger line corresponding to a pixel row of the pixel region and supplying a trigger pulse corresponding to each of the colors of the plurality of pixels, and a trigger pulse supply part supplying, via the trigger line, the trigger pulse in a manner that a signal voltage of each pixel of a predetermined color in the pixel region is read out for each pixel row via the vertical signal line, and thereafter, a signal voltage of each pixel of another color in the pixel region is read out for each pixel row via the vertical signal line. | 10-03-2013 |
20130265472 | METHOD, APPARATUS AND SYSTEM FOR REDUCING PIXEL CELL NOISE - Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces. | 10-10-2013 |
20130278807 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween. | 10-24-2013 |
20130293755 | PHOTOGRAPHING APPARATUS OF WHICH IMAGE PICKUP AREA IS DIVIDED, AND IMAGE PICKUP DEVICE THEREOF - A photographing apparatus and an image pickup device thereof include an image pickup device of which an image pickup area includes a plurality of pixels and is divided into a plurality of sub-image pickup areas, and at least one pixel included in each of the sub-image pickup areas outputs image signals at a same time. | 11-07-2013 |
20130300907 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device and a camera system are provided. The solid-state imaging device capable of performing an intermittent operation includes a pixel unit and a pixel signal readout unit for reading out a pixel signal from the pixel unit in units of a plurality of pixels for each column. The pixel signal readout circuit includes a plurality of comparators and a plurality of counters whose operations are controlled by outputs of the comparators. Each of the comparators includes an initializing switch for determining an operating point for each column at a start of row operation, and is configured so that an initialization signal to be applied to the initializing switch is controlled independently in parallel only a basic unit of the initialization signal used for a horizontal intermittent operation, and the initializing switch is held in an off-state at a start of non-operating row. | 11-14-2013 |
20130308031 | Image sensor and method for power efficient readout of sub-picture - An image sensor ( | 11-21-2013 |
20130314575 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device is provided, which includes a pixel region in which pixels including a photoelectric conversion section and a plurality of pixel transistors are arranged. In the solid-state imaging device, a transfer transistor of the pixel transistors includes: a transfer gate electrode extended in a surface of the substrate formed on the surface of a semiconductor substrate; and a transfer gate electrode buried in the substrate which is electrically insulated from the transfer gate electrode extended in a surface of the substrate and is embedded in the inside of the semiconductor substrate in the vertical direction through the transfer gate electrode extended in a surface of the substrate. | 11-28-2013 |
20130314576 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer. | 11-28-2013 |
20130321685 | UNIT PIXEL OF IMAGE SENSOR AND PIXEL ARRAY INCLUDING THE UNIT PIXEL - A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased. | 12-05-2013 |
20130329105 | IMAGING DEVICE - An imaging device includes an image capturing unit configured to capture an optical image of a corresponding one of pixels included in a screen, and the image capturing unit of part of the pixels in the screen includes an adjustment unit which contains an electric field responsive material and is configured to adjust a transmittance of light by the electric field responsive material, and a light-receiving unit configured to receive the light for which the transmittance has been adjusted by the adjustment unit. | 12-12-2013 |
20130329106 | MEMS Fast Focus Camera Module - An auto focus camera module includes a camera module housing defining an aperture and an internal cavity to accommodate camera module components, an image sensor coupled to or within the housing, a lens barrel within the housing that contains an optical train including at least one movable lens disposed relative to the aperture and image sensor to focus images of scenes onto the image sensor along an optical path, and a fast focus MEMS actuator coupled to one or more lenses of the optical train including the at least one movable lens and configured to rapidly move said at least one movable lens relative to the image sensor to provide autofocus for the camera module in each frame of a preview or video sequence or both. | 12-12-2013 |
20130335610 | IMAGE PICKUP UNIT AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor. Each of the pixels includes a light-blocking layer in a peripheral region of the photoelectric conversion device, and the light-blocking layer is maintained to a predetermined electric potential. | 12-19-2013 |
20140002704 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE | 01-02-2014 |
20140002705 | CMOS PIXEL CONTROL METHOD | 01-02-2014 |
20140002706 | LENS DRIVING CONTROL APPARATUS AND LENS APPARATUS | 01-02-2014 |
20140009656 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device includes a pixel array section including a plurality of pixels, a pixel drive line controlling driving the pixels in each row, a signal line reading an analog signal of the pixels in each column, a pixel drive unit driving the pixels to perform a readout through the pixel drive line, and a readout circuit capable of converting the analog signal into a digital signal. At least the number of pixel drive lines or the number of signal lines is more than one, and the pixels of each pixel group are connected to different lines of either the pixel drive lines or the signal lines. The pixel drive unit sequentially drives the pixels in the pixel group at shifted timings, and the readout circuit includes an analog-to-digital converter sequentially receiving analog signals from the pixel group and sequentially converting the analog signals into digital signals. | 01-09-2014 |
20140016010 | IMAGE SENSOR AND IMAGE CAPTURING APPARATUS - An image sensor comprises a pixel region in which a plurality of pixels are arranged in a row direction and a column direction. An A/D conversion circuit, arranged for each column, which compares an input signal with a ramp signal that changes with temporal unidirectionality, and converts the input signal into digital data. The sensor comprises an amplitude control unit configured to compare the pixel signal with a predefined reference voltage, and input, to the A/D conversion circuit, the pixel signal if the pixel signal has a voltage less than the reference voltage, or a signal obtained by reducing an amplitude of the pixel signal if the pixel signal has a voltage of not less than the reference voltage, and a data expansion unit configured to add a predetermined number of bits to an A/D-converted data | 01-16-2014 |
20140016011 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR DRIVING THE SAME IN SOLID-STATE IMAGING PICKUP DEVICE AND METHOD FOR DRIVING THE SAME IN A NUMBER OF MODES - A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals. | 01-16-2014 |
20140022430 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD - There is provided a solid-state imaging device including an imaging unit including a plurality of image sensors, and an analog to digital (AD) conversion unit including a plurality of AD converters arranged in a row direction, each AD converter performing AD conversion of an electrical signal output by the image sensor. Each of the AD converters includes a comparator having a differential pair at an input stage, the differential pair including a first transistor and a second transistor, the first and second transistors are each divided into an equal number of a plurality of division transistors, and an arrangement pattern of the plurality of division transistors constituting the comparator in a predetermined column and an arrangement pattern of the plurality of division transistors constituting the comparator in an adjacent column adjacent to the predetermined column are different from each other. | 01-23-2014 |
20140022431 | CMOS IMAGE SENSOR - A CMOS image sensor comprising: an array of pixels for converting incident light to electrical output signals; interface circuitry configured to connect to the array and configured to: determine whether, and when, the output signal generated by each pixel meets one or more readout thresholds; and read out the output signals from the pixels that have met the one or more readout thresholds. | 01-23-2014 |
20140022432 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region. | 01-23-2014 |
20140036125 | IMAGING APPARATUS - An imaging apparatus capable of reducing deterioration of AD conversion accuracy is provided, wherein, when performing the AD conversion on a pixel signal corresponding to a reset level, a latch control unit causes a latch circuit of a latch unit to enter an enabled state (third timing) at a first timing according to a comparison start in a comparing unit, and then causes the latch circuit of the latch unit to execute latching at a fourth timing at which a predetermined time has lapsed from a second timing according to a comparison end in the comparing unit. Further, when performing the AD conversion on the pixel signal corresponding to the signal level, the latch control unit causes the latch circuit of the latch unit to enter the enabled state at the second timing according to the comparison end in the comparing unit. | 02-06-2014 |
20140043511 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a plurality of first unit pixels configured to generate a signal by a photoelectric conversion; a first output line connected to the plurality of first unit pixels; and a first amplifier configured to amplify a signal from the first output line, wherein the first amplifier includes an operational amplifier ( | 02-13-2014 |
20140043512 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit. | 02-13-2014 |
20140055655 | SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device includes: a photodiode which is provided in a pixel region in which each pixel in a pixel forming region above a substrate is disposed; an interconnection layer which includes interconnections to connect the photodiode to peripheral circuits and an interlayer insulating film to insulate the interconnections from each other, and is provided above the photodiode; a color filter which is provided above the interconnection layer corresponding to the pixel region, and limits a wavelength of light incident on the photodiode. A light incident position correcting layer is provided between the color filter corresponding to the pixel disposed in at least the outer peripheral portion of the pixel forming region and the interconnection layer, and includes an anti-reflection film which is provided above the interconnection layer, and materials which have a negative refraction index and provided above the anti-reflection film. | 02-27-2014 |
20140063308 | METHOD FOR DRIVING IMAGING APPARATUS, METHOD FOR DRIVING IMAGING SYSTEM, IMAGING APPARATUS, AND IMAGING SYSTEM - A method for driving an imaging apparatus, a method for driving an imaging system, an imaging apparatus, and an imaging system are disclosed in which the number of times of operation which generates digital signals based on an offset component of a comparing circuit is fewer than the number of times of operations which generate digital signals based on photoelectric conversion signals output by a plurality of rows of pixels. | 03-06-2014 |
20140071321 | SOLID-STATE IMAGING DEVICE - According to an embodiment, a solid-state imaging device includes: a pixel region in which multiple unit pixels are two-dimensionally arranged in a matrix; and a timing generator configured to control application timings of a reset signal and a read signal to be supplied to the pixel region; and during a period for performing a long-time-period exposure once for a first pixel group constituted by multiple unit pixels of the pixel region, a short-time-period exposure is performed multiple times for a second pixel group constituted by multiple unit pixels different from the unit pixels of the first pixel group. | 03-13-2014 |
20140085522 | SOLID-STATE IMAGING DEVICE, CAMERA MODULE, AND IMAGING METHOD - According to one embodiment, a solid-state imaging device includes a pixel array and a row selection circuit. The pixel array outputs a signal for each cell. The cell includes a plurality of pixels arranged in parallel in a column direction. The cells are arranged such that positions in the column direction of a first cell and a second cell are staggered. The first cell includes a blue pixel and a green pixel. The second cell includes a green pixel and a red pixel. In a binning process in the column direction, the row selection circuit selects rows including the green pixel in the first cell at the same time for the first cell. In the binning process in the column direction, the row selection circuit selects rows including the green pixel in the second cell at the same time for the second cell. | 03-27-2014 |
20140092289 | METHOD AND DEVICE FOR PROCESSING CAPTURED-IMAGE SIGNALS - A device for processing captured-image signals, the device includes a pixel array having a plurality of lines, each having first pixels and second pixels including pixels interposed between the first pixels, a scanner configured to alternately perform, in one frame, first scanning for reading, from the pixel array, captured-image signals of the first pixels along each line in one of a direction from a first one of the lines to a last one thereof and a direction from the last line to the first line and second scanning for reading, from the pixel array, captured-image signals of the second pixels along each line in the other direction, and a processor coupled to a memory and configured to combine the read captured-image signals of the first pixels and the read captured-image signals of the second pixels. | 04-03-2014 |
20140098272 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device includes a plurality of pixels arranged in a plurality of columns, a plurality of comparators provided correspondingly to the respective columns, a reference signal generation unit configured to supply a reference signal to the plurality of comparators, a counter configured to generate a count signal that includes a plurality of bits in synchronization with a first clock signal, a synchronization unit configured to synchronize the plurality of bits with a second clock signal to generate a synchronized count signal and to output the generated synchronized count signal, and a plurality of memories provided correspondingly to the respective comparators, the memories each being configured to store the synchronized count signal in response to a change in an output of a corresponding one of the comparators. | 04-10-2014 |
20140104473 | IMAGE SENSOR CHIPS - An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure. | 04-17-2014 |
20140104474 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP SYSTEM - A solid-state image pickup device includes an array of a first pixel and a second pixel. The second pixel includes a light shielding portion provided above a photoelectric conversion portion thereof and configured to block some of incident light so as to perform focus detection, and a light guiding portion provided at least above an upper face of the light shielding portion. | 04-17-2014 |
20140111676 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A solid-state imaging device includes: a pixel unit in which a plurality of unit pixels is arranged in rows and columns, the unit pixels performing photoelectric conversion of incident light to generate pixel information; and a secondary memory unit in which a plurality of unit memories is arranged in rows and columns, the unit memories holding the pixel information, wherein each of the columns in the secondary memory unit includes, as a unit memory block, the unit memories in the column, the secondary memory unit includes: a memory signal line provided for each of the columns in the memory unit; and a selection transistor provided between the unit memory block and the memory signal line, and shared by the plurality of unit memories in the unit memory block. | 04-24-2014 |
20140118591 | Dynamic Coded Aperture Camera - Embodiments of the present invention provide a system for capturing photographic images with a dynamic coded aperture camera coupled to an electronic display. The system includes: a display screen; a set of display elements coupled either to a front side of the display screen or to a front side of an imaging-capturing mechanism; a set of masking elements behind the set of display elements coupled to a front side of an image-capturing mechanism; and the image-capturing mechanism coupled to a backside of the display screen. The image-capturing mechanism is configured to capture a photographic image of objects in front of the display screen through the display screen and through the display and masking elements while the display and masking elements are in the inactive state. | 05-01-2014 |
20140118592 | CMOS IMAGE SENSORS WITH FEATURE EXTRACTION - A CMOS imaging sensor with ernbedded feature extraction capability operatable in different modes by a method that includes the steps of: (a) operating the CMOS imaging sensor in a motion-detecting mode at a first power level using circuitry on the imaging sensor that generates motion data based on received images detected by pixels in the pixel array; (b) switching the imaging sensor from the motion-detecting mode to a feature extraction mode in response to detecting motion; and (c) operating the imaging sensor in the feature extraction mode at a second power level that is higher than the first power level. | 05-01-2014 |
20140118593 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines. | 05-01-2014 |
20140125855 | METHOD OF ACQUIRING PHYSICAL INFORMATION AND PHYSICAL INFORMATION ACQUIRING DEVICE - Disclosed is a method of acquiring physical information that acquires physical information by using a semiconductor device. The semiconductor device includes unit elements, each of which has a detecting unit and a unit signal generating unit. The method includes the steps of: providing an operation current supply unit supplying an operation current such that the unit signal generating unit outputs a unit signal, and a signal processing unit receiving the unit signal output from each of the unit elements forming the semiconductor device and outputting an output unit signal; and when a selective read mode is designated for reading the unit signal from a portion of the respective unit elements, an operation current of the output signal line of the unit signal generating unit not to be read is reduced so as to be smaller than an operation current of the output signal line of the unit signal generating unit to be read. | 05-08-2014 |
20140132813 | CAMERA MODULE HAVING PASSIVE COMPONENTS - A camera module includes a substrate, an image sensor chip, a lens module and a number of passive components. The substrate includes a supporting surface. The image sensor chip is supported by the supporting surface, and electrically connected to the substrate. The lens module is positioned on the supporting surface with the image sensor chip being received in the lens module. The passive components are positioned on the supporting surface and mechanically and electrically connected to the substrate. The passive components are all located outside the lens module. | 05-15-2014 |
20140132814 | SEMICONDUCTOR INTEGRATED CIRCUIT, CURRENT CONTROL METHOD, AD CONVERTER, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC SYSTEM - A semiconductor integrated circuit includes: a plurality of current sources including a first transistor individually connected to a power source line and a bias line; and a plurality of bias blocks including a second transistor configured to constitute a current mirror circuit together with the first transistor, and to divide a reference current to be a reference of the current sources so that the reference current flows through the bias line. | 05-15-2014 |
20140132815 | Digital camera structure capable of selectively mounting a camera lens - A digital camera structure is provided with a housing and at least one optical assembly. The housing defines a substantially inverted cone-shaped recess at its front that accommodates therein a CMOS image sensor being electrically connected to a control board within the housing. The optical assembly is selectively and releasably mounted into the inverted cone-shaped recess corresponding to the CMOS image sensor. The optical assembly is constructed of a wide-angle lens module for providing a wider angle of view, a telephoto lens module for bringing distant objects closer, a close-up lens module for monitoring miniature objects, or a filtering module for reducing undesired light. | 05-15-2014 |
20140139713 | SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND SIGNAL READING METHOD - This solid-state imaging device includes a first substrate and a second substrate which have circuit elements constituting pixels disposed therein are electrically connected to each other. The pixels includes: a photoelectric conversion element disposed in the first substrate; an amplifier circuit that amplifies a signal generated in the photoelectric conversion element to output the amplified signal; a signal accumulation circuit which is disposed in the second substrate and accumulates the amplified signal which is output from the amplifier circuit; and an output circuit that outputs the amplified signal accumulated in the signal accumulation circuit from the pixel. | 05-22-2014 |
20140139714 | SOLID STATE IMAGING DEVICE - A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer. | 05-22-2014 |
20140139715 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF CONTROLLING SOLID-STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP DEVICE - A solid-state image pickup device includes a plurality of pixels arranged in a two-dimensional matrix, and outputs signals corresponding to the light quantity incident on each pixel. Each pixel includes: a first pixel that is equipped with a first photoelectric conversion means that converts incident light into an electrical signal to store it; and a second pixel that is equipped with a second photoelectric conversion means that converts incident light into an electrical signal to store it, and a light beam selecting means that selects a light beam that is incident on the second photoelectric conversion means. The solid-state image pickup device includes: a first scanning circuit; and a second scanning circuit. The solid-state image pickup device outputs the electrical signals stored in the first photoelectric conversion means as image signals, and outputs the electrical signals stored in the second photoelectric conversion means as focus signals. | 05-22-2014 |
20140146211 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; | 05-29-2014 |
20140152880 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes unit pixels each having a light-collecting element for collecting incident light, the light-collecting element: is divided into a plurality of zones each having a ring shape of concentric structure and a line width shorter than a wavelength of the incident light; and has an effective refractive index distribution controlled according to a combination of the zones, and in at least one of the zones, a light-transmissive film which is included in the zone is divided in a circumferential direction of the concentric structure at an interval shorter than the wavelength of the incident light. | 06-05-2014 |
20140152881 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATELY ARRANGED PIXEL COMBINATIONS - A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element. | 06-05-2014 |
20140160332 | SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM - A pixel includes an embedded photo diode (PD), an amplification transistor forming a source follower circuit having a gate for input and a source for output, and a transfer transistor that transfers a charge to the gate of the amplification transistor, the charge being photoelectrically converted by the PD. The amplification transistor is formed in a semiconductor substrate electrically isolated from a substrate on which the embedded PD and the transfer transistor are formed and the substrate of the amplification transistor is in a floating state. The reading unit includes a ΔΣ modulator that inputs/outputs the image signal per pixel unit and the output of the ΔΣ modulator is given, as feedback, to a capacitative unit functioning as a capacity to integrate the pixel. | 06-12-2014 |
20140160333 | IMAGE SENSOR AND IMAGE SENSING APPARATUS - An image sensor comprises: a pixel unit array; a driving unit; a second holding block; a first output amplifier; and a second output amplifier, each column of the pixel unit array including a plurality of first pixel units and a plurality of second pixel units, wherein the driving unit drives the pixel unit array to parallel-perform, on each column of the pixel unit array, an operation to transfer signals from the first pixel units to the first holding block via the first vertical output line, and an operation to transfer signals from the second pixel units to the second holding block via the second vertical output line. | 06-12-2014 |
20140160334 | IMAGE PICKUP DEVICE, CONTROL METHOD, AND IMAGE PICKUP APPARATUS - The present disclosure relates to an image pickup device, a control method, and an image pickup apparatus, which can implement more various data outputs. | 06-12-2014 |
20140168491 | SOLID-STATE IMAGING APPARATUS - An object is to provide a solid-state imaging apparatus capable of causing driving signals of pixels to reach the entire screen and of driving all the pixels. The solid-state imaging apparatus includes a pixel region including a plurality of pixels therein, each pixel having a photoelectric conversion element and at least one transistor, and a plurality of driving lines, each driving each of the plurality of transistors arranged in the pixel region, wherein the driving line supplies a driving signal through a buffer arranged in the pixel region to the transistor, and the number of the buffers is smaller than the number of the pixels. | 06-19-2014 |
20140168492 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 06-19-2014 |
20140176771 | SOLID-STATE IMAGING DEVICE AND DIGITAL CAMERA - A solid-state imaging device comprises first pixels and second pixels. The first pixel has a first PD and a first photoelectric conversion film. The second pixel has a second PD and a second photoelectric conversion film. The first PD and the second PD are formed in a surface layer of a semiconductor substrate. The first photoelectric conversion film is formed over the first PD, in a position shifted in a rightward direction relative to the center of the first PD. The second photoelectric conversion film is formed over the second PD, in a position shifted in a leftward direction relative to the center of the second PD. The first photoelectric conversion film photoelectrically converts incident light incident on a right area of the first PD. The second photoelectric conversion film photoelectrically converts incident light incident on a left area of the second PD. | 06-26-2014 |
20140184866 | IMAGE PICKUP ELEMENT, IMAGE PICKUP APPARATUS, AND METHOD AND PROGRAM FOR CONTROLLING THE SAME - An image pickup element generates an AF evaluation value to be used for image-pickup in accordance with an image signal corresponding to a voltage signal obtained from a first pixel group among a plurality of pixels. The image pickup element further outputs an image signal corresponding to a voltage signal obtained from a second pixel group among the plurality of pixels as a live-view display signal for image display. In accordance with the AF evaluation value, a control unit controls a mechanical optical unit having a focus lens and performs live-view display on an image display unit in accordance with the live-view display signal. | 07-03-2014 |
20140204257 | IMAGE READER COMPRISING CMOS BASED IMAGE SENSOR ARRAY - The invention features an image reader and a corresponding method for capturing a sharp distortion free image of a target, such as a one or two-dimensional bar code. In one embodiment, the image reader comprises a two-dimensional CMOS based image sensor array, a timing module, an illumination module, and a control module. The time during which the target is illuminated is referred to as the illumination period. The capture of the image by the image sensor array is driven by the timing module that, in one embodiment, is able to simultaneously expose substantially all of the pixels in the array. The time during which the pixels are collectively activated to photo-convert incident light into charge defines the exposure period for the sensor array. In one embodiment, at least a portion of the exposure period occurs during the illumination period. | 07-24-2014 |
20140204258 | IMAGE SENSOR, METHOD FOR OPERATING THEREOF, AND IMAGE PICK-UP DEVICE HAVING THE SAME - The image sensor includes a plurality of column lines, a plurality of active road circuits and a selection circuit. The plurality of column lines are each connected to a corresponding one of a plurality of pixels. The plurality of active road circuits are each connected to a corresponding one of the plurality of column lines. The selection circuit is configured to enable a portion of the plurality of active road circuits based on a plurality of column selection signals. | 07-24-2014 |
20140211056 | VERTICALLY STACKED IMAGE SENSOR - A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate. | 07-31-2014 |
20140211057 | Black Level Control for Image Sensors - An embodiment image sensor includes a pixel region spaced apart from a black level control (BLC) region by a buffer region. In an embodiment, a light shield is disposed over the BLC region and extends into the buffer region. In an embodiment, the buffer region includes an array of dummy pixels. Such embodiments effectively reduce light cross talk at the edge of the BLC region, which permits more accurate black level calibration. Thus, the image sensor is capable of producing higher quality images. | 07-31-2014 |
20140211058 | IMAGE PICKUP DEVICE AND CAMERA SYSTEM - Provided are an image pickup device and a camera system that are capable of performing high-precision image pickup with less noise both at low illuminance and high illuminance without increasing the speed of a sense circuit and power consumption. The image pickup device includes a pixel array section including a plurality of pixels arranged in an array, each of the pixels including a photoelectric conversion device, a storage section, and an amplifier device configured to output an accumulated charge as an electrical signal, each of the pixels configured to output an electrical signal to an output signal line in response to photon incidence; and a sense circuit section including a sense circuit, the sense circuit configured to perform decision as to whether or not a photon is incident on the pixel in a predetermined period, in which the sense circuit includes an AD conversion device connected to the output signal line, the AD conversion device is allowed to operate by at least two modes, i.e., a one-bit output mode by binary decision and a gray-scale output mode by multi-bit resolution, and at least when the one-bit output mode is selected, the AD conversion device integrates output results from each of the pixels by a plurality of exposures to determine intensity of light incident on each of the pixels by calculation. | 07-31-2014 |
20140218578 | CAMERA MODULE, SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING THE SAME - According to an embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a plurality of photoelectric conversion devices and an amplifier transistor. The plurality of photoelectric conversion devices photoelectrically converts an incident beam into signal charges. The amplifier transistor is provided on a face on the opposite side of the light incidence plane of the photoelectric conversion devices through an interlayer insulating film as the amplifier transistor is laid over the photoelectric conversion devices. The amplifier transistor has the area of a channel greater than the area of the incidence plane of a single photoelectric conversion device, and the amplifier transistor amplifies the signal charges. | 08-07-2014 |
20140218579 | Image Capture Device with Shared Focusing Mechanism - An image capture device includes a focusing mechanism, a plurality of lenses, and an image sensing element. The lenses are driven by the focusing mechanism to perform focus operation. The image sensing element selectively receives an image through one of the lenses. | 08-07-2014 |
20140218580 | PIXEL-GROUPING IMAGE SENSOR - The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel. | 08-07-2014 |
20140232918 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer. | 08-21-2014 |
20140232919 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device and a camera system are provided. The solid-state imaging device capable of performing an intermittent operation includes a pixel unit and a pixel signal readout unit for reading out a pixel signal from the pixel unit in units of a plurality of pixels for each column. The pixel signal readout circuit includes a plurality of comparators and a plurality of counters whose operations are controlled by outputs of the comparators. Each of the comparators includes an initializing switch for determining an operating point for each column at a start of row operation, and is configured so that an initialization signal to be applied to the initializing switch is controlled independently in parallel only a basic unit of the initialization signal used for a horizontal intermittent operation, and the initializing switch is held in an off-state at a start of non-operating row. | 08-21-2014 |
20140240568 | ELECTRONIC APPARATUS, CONTROL METHOD, AND IMAGE SENSOR - An electronic apparatus includes: a reference-signal output section that outputs a reference signal; a comparator that compares an electrical signal output from a pixel with the reference signal; a counter that obtains a count value as an AD conversion result of the electrical signal, the count value being obtained by counting time taken for the reference signal to change until the electrical signal and the reference signal match each other; and an auto-zero control section that performs control so that auto zero processing for setting the comparator is completed in a reset period, in which the pixel is reset, so that a comparison result indicating that two input signals supplied to the comparator match each other. | 08-28-2014 |
20140240569 | IMAGE SENSOR - An image sensor includes a pixel array including at least one active pixel and at least one line-optical black (L-OB) pixel arranged in a matrix including first to n | 08-28-2014 |
20140240570 | IMAGING APPARATUS, IMAGING SYSTEM, AND METHOD FOR DRIVING IMAGING APPARATUS - There are provided an imaging apparatus, an imaging system, and a method for driving the imaging apparatus, which include a pixel including a conversion unit and an AD conversion unit for converting a signal output from the conversion unit into a digital signal, a first bias line electrically connected to the conversion unit, and a capacitance element for storing the voltage based on the potential of the first bias line, wherein the AD conversion unit is driven by the voltage stored in the capacitance element. | 08-28-2014 |
20140240571 | IMAGE DATA PROCESSING METHOD, IMAGE SENSOR AND IMAGE DATA PROCESSING SYSTEM USING THE METHOD - An image sensor supporting a normal sampling mode and a 1/N sampling mode for transmitting image data detected by a plurality of unit image sensors and stored in a plurality of latch circuits to a data processor using a plurality of transmission lines, wherein N is a natural number greater than 2, the image sensor including a horizontal address generator configured to generate horizontal addresses corresponding to addresses of the plurality of latch circuits, and to generate, based on the horizontal addresses, a first channel selection control signal and a second channel selection control signal of which activation times at least partially overlap. | 08-28-2014 |
20140247381 | IMAGE PICKUP APPARATUS, DRIVING METHOD FOR IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND DRIVING METHOD FOR IMAGE PICKUP SYSTEM - In an image pickup apparatus, a counter configured to output a count signal to a second AD conversion unit starts, with a delay, counting clock signals as compared with a counter configured to output a count signal to a first AD conversion unit by a time period corresponding to a delay of a reference signal output to a comparator of the second AD conversion unit with respect to a reference signal output to the comparator of the first AD conversion unit. | 09-04-2014 |
20140253774 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - The present invention provides a photoelectric conversion apparatus capable of preventing dark current noise due to a leakage current of a transistor and improving the signal-to-noise ratio. A photoelectric conversion apparatus includes a pixel which in turn includes a photoelectric conversion element adapted to convert light into an electric charge, buffers whose input terminals are connected to an output terminal of the photoelectric conversion element and which buffer a voltage corresponding to the electric charge of the photoelectric conversion element, a capacitor whose first electrode is connected to an output terminal of the photoelectric conversion element, a first switch connected between a second electrode of the capacitor and output terminals of the buffers, and a second switch connected between the second electrode of the capacitor and a fixed voltage node. | 09-11-2014 |
20140267859 | IMAGE SENSOR, OPERATING METHOD THEREOF, AND DEVICE INCLUDING THE IMAGE SENSOR - An image sensor includes a first photoelectric conversion element supplying charges to a first charge storage node, a first charge storage element adjusting an amount of charges supplied from a charge supply source to the first charge storage node in response to a feedback signal, and a feedback signal generating circuit generating the feedback signal based on an amount of charges in the first charge storage node. | 09-18-2014 |
20140267860 | IMAGE SENSOR WITH SUBSTRATE NOISE ISOLATION - A process including forming an a backside-illuminated (BSI) image sensor in a substrate, the image sensor including a pixel array formed in or near a front surface of the substrate and one or more circuit blocks formed in the substrate near the pixel array, each circuit block including at least one support circuit. An interconnect layer is formed on the front surface of the substrate that includes a dielectric within which are embedded traces and vias, wherein the traces and vias electrically couple the pixel array to at least one of the one or more support circuits. An isolation trench is formed surrounding at least one of the one or more circuit blocks to isolate the pixel array and other circuit blocks from noise generated by the at least one support circuit within the circuit block surrounded by the isolation trench. Other embodiments are disclosed and claimed. | 09-18-2014 |
20140267861 | IMAGE SENSORS - An image sensor includes a pixel array and a plurality of pairs of column lines. The pixel array includes a plurality of unit pixel areas arranged in a plurality of rows and columns. Each of the unit pixel areas includes a readout circuit connected to a corresponding pair of column lines, and first and second photo-electric conversion devices sharing the readout circuit. Each of the unit pixel areas is configured to output a first pixel signal corresponding to a photoelectron generated by the first photo-electric conversion device through the first column line, and to output a second pixel signal corresponding to a photoelectron generated by the second photo-electric conversion device through the second column line. | 09-18-2014 |
20140267862 | SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING THE SAME, AND CAMERA SYSTEM - Provided is a solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven. | 09-18-2014 |
20140267863 | Electronic Device and Imaging Method Thereof - An electronic device and an imaging method thereof are described. The electronic device includes at least one display unit and at least one image acquisition unit. The display unit is arranged adjacent to said image acquisition unit. The image acquisition unit is provided with a lens for collecting optical signals and a photosensitive diode unit for converting the optical signals into electrical signals. The lens is arranged in the direction of the incident light of the photosensitive diode unit. The electronic device and the imaging method thereof can implement better imaging effects. | 09-18-2014 |
20140285697 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR DRIVING THE SAME - A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals. | 09-25-2014 |
20140293106 | ANALOG-TO-DIGITAL CONVERSION CIRCUIT, AND IMAGE SENSOR INCLUDING THE SAME - One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node. | 10-02-2014 |
20140293107 | IMAGE PICKUP DEVICE AND CAMERA SYSTEM - Provided are an image pickup device and a camera system that are capable of detecting an extremely small signal from a pixel or one photon signal with low noise and high precision at high speed, and are capable of performing various kinds of high-performance shooting by increasing a frame rate with use of this. Each sense circuit includes a comparator configured to compare an output signal from a pixel with a reference signal, and when signal detection is performed, a charge allowing a first pixel signal output from a selected pixel to be cancelled out is held in one or both of input sections of the comparator, an independent offset bias for each comparator is applied to one of the input sections of the comparator to cancel out an offset of the comparator, and a digital decision on intensity of light incident on the pixel is performed by comparing a reference signal changing in steps with a second pixel signal output from the selected pixel. | 10-02-2014 |
20140307142 | SOLID-STATE IMAGING DEVICE, SIGNAL PROCESSING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel array section that includes a light-blocked pixel portion, and an effective pixel portion, and a signal process circuit that processes a pixel signal output from each pixel of the pixel array section. The signal processing circuit calculates, as held data, a row statistic obtained by performing a statistical process on pixel signals of the light-blocked pixel portion in the unit of rows, holds the held data items of a plurality of rows including a process target row of the pixel array section, randomly selects one of the held data items of a plurality of rows, and subtracts the randomly selected held data item from a pixel signal of the pixel of the process target row in the effective pixel portion. | 10-16-2014 |
20140313386 | HIGH DYNAMIC RANGE CMOS IMAGE SENSOR HAVING ANTI-BLOOMING PROPERTIES AND ASSOCIATED METHODS - A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time. | 10-23-2014 |
20140313387 | IMAGE SENSOR SAMPLED AT NON-UNIFORM INTERVALS - In an integrated-circuit image sensor, binary sample values are read out from an array of pixels after successive sampling intervals that collectively span an image exposure interval and include at least two sampling intervals of unequal duration. Each pixel of the array is conditionally reset after each of the successive sampling intervals according to whether the pixel yields a binary sample in a first state or a second state. | 10-23-2014 |
20140320717 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - The present disclosure relate to photoelectric conversion apparatus and imaging system. The photoelectric conversion apparatus has a plurality of pixels arranged in rows and columns, and each configured to generate a signal by photoelectric conversion, a plurality of holding capacitors arranged correspondingly to the respective columns of the plurality of pixels, and configured to hold signals based on the pixels, a first output line, a second output line, a first switch arranged between the holding capacitor and the first output line, a second switch arranged between the holding capacitor and the second output line, and a column selecting line configured to control the second switch, wherein a wiring structure of a portion at which the column selecting line intersects the first output line is different from a wiring structure of a portion at which the column selecting line intersects the second output line. | 10-30-2014 |
20140320718 | Vertically Stacked Image Sensor - A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate. | 10-30-2014 |
20140320719 | SOLID-STATE IMAGE DEVICE, METHOD FOR DRIVING SAME, AND CAMERA SYSTEM - Provided is a solid-state image device including a pixel unit adapted to have a plurality of pixels arrayed in a matrix form, the plurality of pixels including a photoelectric conversion element which converts an optical signal into an electrical signal and stores signal charge corresponding to exposure time, peripheral circuits adapted to be arranged adjacent to edge portions of the pixel unit that face each other and adapted to be driven in association with at least read operation of a pixel signal, and a pixel signal readout unit adapted to read the pixel signal from the pixel unit in a unit of a plurality of pixels. | 10-30-2014 |
20140327801 | IMAGE SENSOR, IMAGING APPARATUS AND LIVE BODY IMAGING APPARATUS - There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter. | 11-06-2014 |
20140327802 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD OF THE SAME, AND ELECTRONIC DEVICE EQUIPPED WITH THE SAME - A pixel includes detection portions which detect transferred charges, a reset portion which resets the plurality of detection portions, a connection/separation control portion which controls connection and separation of the detection portions, and an output portion which outputs a signal corresponding to the potential of a detection portion. In a state where the connection/separation control portion connects the detection portions, the output portion outputs a connection-state reset level signal and a connection-state output signal and, in a state where the connection/separation control portion separates the detection portions, the output portion outputs a separation-state reset level signal and a separation-state output signal. A first pixel signal is generated by a difference between the connection-state reset level signal and the connection-state output signal, and a second pixel signal is generated by a difference between the separation-state reset level signal and the separation-state output signal. | 11-06-2014 |
20140333814 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group. | 11-13-2014 |
20140333815 | SOLID-STATE IMAGING APPARATUS AND CAMERA - A solid-state imaging apparatus including a pixel array, the column signal lines, arranged so as to correspond to each column of the pixel array, for reading out signals from the pixel array, the current sources, for supplying currents corresponding to potentials of controlling terminals of the current sources to the column signal lines, and a supplying unit for supplying a first potential and a second potential to the controlling terminals, wherein in a first mode for reading out the signals from the pixel array, the supplying unit supplies the first potential to the controlling terminals, and in a second mode for stopping the reading out, the supplying unit supplies the second potential to the controlling terminals, and the currents supplied by the current sources of the second mode is smaller than that of the first mode. | 11-13-2014 |
20140333816 | IMAGE PICKUP APPARATUS - An image pickup apparatus comprising a pixel configured to convert optical signal into an electrical signal, a comparison unit configured to compare a pixel signal from the pixel with a reference voltage, an A/D conversion unit configured to analog/digital (A/D)-convert the pixel signal in a conversion mode selected based on a comparison result of the comparison unit, and a correction unit configured to correct at least one of an offset and a gain generated by the A/D conversion for an output data of the A/D conversion unit, wherein a value for offset correction or gain correction performed by the correction unit is changed according to the selected conversion mode. | 11-13-2014 |
20140333817 | IMAGE PICKUP APPARATUS - An output impedance of a drive unit configured to drive a drive line is set to be varied during a period in which a drive pulse for setting each transfer transistor to be in a conductive state is supplied and during a period in which a drive pulse for setting each transfer transistor to be in a non-conductive state is supplied. | 11-13-2014 |
20140340555 | IMAGE SENSING APPARATUS - An image sensing apparatus including a plurality of pixels arranged in a row direction and a column direction. Each pixel including a first photoelectric conversion element, a second photoelectric conversion element. A processing unit including a first capacitor and a second capacitor which are configured to hold a signal obtained by a signal of the first photoelectric conversion element and a signal of the second photoelectric conversion element. In a first image sensing mode, the processing unit holds an image sensing signal obtained by adding the signal of the first photoelectric conversion element and the signal of the second photoelectric conversion element in the second capacitor. In a second image sensing mode, the processing unit holds the added image sensing signal in a combined capacitance obtained by connecting the first capacitor and the second capacitor in parallel. | 11-20-2014 |
20140347536 | IMAGE PICKUP DEVICE AND IMAGE PICKUP DISPLAY SYSTEM - Provided is an image pickup device that includes: pixels each including a photoelectric conversion element and one or more switching elements; control lines provided to perform open/close control of at least one first switching element; a buffer circuit provided for each control line, and configured to output a voltage to each control line; second switching elements each provided between corresponding one of the control lines and a power source of the corresponding buffer circuit; and a switch control circuit that is, upon image pickup driving, configured to control one of the second switching elements, provided between a defect holding line that includes an electrically short-circuited part in the plurality of control lines and the power source of the buffer circuit of the defect holding line, to be in an open state, and configured to control another one of the second switching elements to be in a closed state. | 11-27-2014 |
20140347537 | IMAGING SENSOR CAPABLE OF PHASE DIFFERENCE FOCUS DETECTION - An imaging device capable of phase difference focus detection is described. The imaging device includes a plurality of pixels that are 2-dimensionally arranged and which receive image light. At least one pixel of the plurality of pixels comprises: a micro lens; a plurality of photoelectric conversion units, which are biased around an optical axis of the micro lens; and a control unit, which limits generation of electrons photoelectrically converted at at least one photoelectric conversion unit of the plurality of photoelectric conversion units. | 11-27-2014 |
20140347538 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPLIANCE - The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device | 11-27-2014 |
20140347539 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD OF THE SAME, AND IMAGING APPARATUS - A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate. | 11-27-2014 |
20140354865 | ANALOG TO DIGITAL CONVERSION CIRCUIT, IMAGE SENSING DEVICE HAVING THE SAME AND METHOD OF DRIVING IMAGE SENSING DEVICE - An analog-to-digital conversion circuit includes a reference current generating unit suitable for generating a reference current varied by a given level in a sampling stage, a ramp voltage generating unit suitable for generating a ramp voltage corresponding to the reference current, and a comparison unit suitable for comparing the ramp voltage with a voltage level of a pixel signal to output a comparison signal. | 12-04-2014 |
20140354866 | IMAGE SENSING DEVICE AND METHOD FOR OPERATING THE SAME - An image sensing device includes a plurality of pixels arranged in rows and columns and a sampling unit suitable for sampling the plurality of pixels in units of M by N in a binning mode, M and N being a positive integer greater than 2. | 12-04-2014 |
20140362269 | IMAGE PROCESSING DEVICE AND IMAGING METHOD - An image processing apparatus that comprises a plurality of read out rows in an imaging unit of the apparatus. The imaging region comprises of a plurality of pixels which are equipped with color filters of the red, blue and green type. The apparatus comprises a controller configured to set a frame rate for a first row scanning unit and a second frame rate for a second row scanning unit. The apparatus is further configured to perform image interpolation and perform the auto focus, auto exposure, auto black white or the like functions and display an image with a high resolution on a display unit. | 12-11-2014 |
20140362270 | METHOD AND APPARATUS FOR BUFFERING ANALOG INFORMATION - Generally, an integrated circuit, an apparatus and a method for buffering analog information capture first analog information with a capture element and store at least portions of the analog information in a first passive variable resistance memory element coupled to the capture element and in a second passive variable resistance memory element. The portions of the analog information stored in the first passive variable resistance memory element and in the second passive variable resistance memory element may be the same or may be different. | 12-11-2014 |
20140362271 | AD CONVERTER, SIGNAL PROCESSING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is an AD converter including a first AD converting unit in which pixel columns of a pixel array are divided into at least two groups, and that compares a first ramp signal and a first pixel signal output from a first group of the pixel columns and performs AD conversion on the first pixel signal; and a second AD converting unit that compares a second ramp signal and a second pixel signal output from a second group of the pixel columns and performs AD conversion on the second pixel signal, in which the first ramp signal is a signal of which a level is decreased with a constant slope over time in a D-phase period for detecting a signal level of a pixel signal, and the second ramp signal is a signal of which a level is increased with a constant slope over time in the D-phase period. | 12-11-2014 |
20140362272 | METHOD OF GENERATING PIXEL ARRAY LAYOUT FOR IMAGE SENSOR AND LAYOUT GENERATING SYSTEM USING THE METHOD - A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials. | 12-11-2014 |
20140362273 | SOLID-STATE IMAGING APPARATUS AND SEMICONDUCTOR DEVICE - The present invention provides a small-sized inexpensive solid-state imaging apparatus. A D/A converter included in a successive comparison type A/D converter of the solid-state imaging apparatus includes a multiplexer which selects any of reference voltages VR | 12-11-2014 |
20140368710 | PIXEL SIGNAL PROCESSING APPARATUS AND CMOS IMAGE SENSOR USING THE SAME - A CMOS image sensor may include an active pixel sensor suitable for generating a pixel signal corresponding to incident light, a reference pixel array suitable for shielding incident light and generate a reference value, a readout circuit suitable for comparing the pixel signal and the reference value with a ramp signal and for removing a first noise of the pixel signal in a common mode, and a pixel signal processing circuit suitable for performing a linear operation on an output signal from the readout circuit and the reference value, and for removing a second noise of the pixel signal in the common mode. | 12-18-2014 |
20140368711 | REDUCED HEIGHT CAMERA MODULE FOR SMALL FORM FACTOR APPLICATIONS - A camera module for a mobile device includes a cover, a base and a lens module. The cover has an outer side from which an annular axial extension protrudes. The axial extension defines a lens opening and a lens movement axis. The axial extension has an outer end surface defining an outer end of the camera module. The outer side of the cover laterally adjacent the axial extension defines a gasket sealing surface against which a gasket can be compressed for sealing. The base defines an inner end of the camera module opposite the outer end. The lens barrel is positioned within the module and driveable to extend and retract relative to the base and within the axial extension. The lens barrel at an outermost position is axially recessed from the end surface of the axial extension and is laterally separated from the gasket sealing surface by the axial extension. | 12-18-2014 |
20140368712 | IMAGE ADJUSTMENT APPARATUS AND IMAGE SENSOR FOR SYNCHRONOUS IMAGE AND ASYNCHRONOUS IMAGE - Disclosed is an image adjustment apparatus including a receiver which is configured to receive a first input image of an object which is time-synchronously captured and a second input image in which a motion event of the object is sensed time-asynchronously, and an adjuster which is configured to adjust the first input image and the second input image. | 12-18-2014 |
20140368713 | SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A voltage limiting unit of a solid state imaging device limits a voltage of a signal line so as not to become a predetermined value or less. A signal processing unit to which a pixel signal is input via a signal line. A controlling unit is disposed between the voltage limiting unit and the signal processing unit on the signal line. Further, the controlling unit causes the voltage limiting unit and the signal processing unit to be non-conductive in a period in which a transfer unit of a pixel transfers the electric charge converted by a photoelectric conversion unit of the pixel to a floating diffusion region of the pixel. | 12-18-2014 |
20140368714 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a first chip including a plurality of pixels, each pixel including a light sensing unit generating a signal charge responsive to an amount of received light, and a plurality of MOS transistors reading the signal charge generated by the light sensing unit and outputting the read signal charge as a pixel signal, a second chip including a plurality of pixel drive circuits supplying desired drive pulses to pixels, the second chip being laminated beneath the first chip in a manner such that the pixel drive circuits are arranged beneath the pixels formed in the first chip to drive the pixels, and a connection unit for electrically connecting the pixels to the pixel drive circuits arranged beneath the pixels. | 12-18-2014 |
20140375858 | RAMP SIGNAL GENERATOR AND IMAGE SENSOR INCLUDING THE SAME - A ramp signal generator includes a rising-edge current unit, a falling-edge current unit and a current-voltage converter. The rising-edge current unit provides a rising-edge output current that sequentially increases or decreases in synchronization with rising edges of a clock signal. The falling-edge current unit provides a falling-edge output current that sequentially increases or decreases in synchronization with falling edges of the clock signal. The current-voltage converter outputs a ramp voltage by converting a summed current of the rising-edge output current and the falling-edge output current. | 12-25-2014 |
20140375859 | SOLID-STATE IMAGE SENSOR - Each of pixels in a pixel array includes a photoelectric converter and a readout circuit which outputs a signal in accordance with charges generated in the photoelectric converter. The readout circuit includes a group of transistors which are disposed so as to form a current path fed by a current source. The readout circuit of a pixel in a first line in the array and the readout circuit of a pixel in a second line in the array are disposed between the photoelectric converter of the pixel in the first line and the photoelectric converter of the pixel in the second line. Directions of currents respectively flowing through the group of transistors in the readout circuit of the pixel in the first line and the plurality of transistors in the readout circuit of the pixel in the second line are the same. | 12-25-2014 |
20150009385 | IMAGING APPARATUS AND DRIVING METHOD THEREOF - An imaging apparatus includes: pixel circuits ( | 01-08-2015 |
20150009386 | A/D CONVERSION CIRCUIT, AND SOLID-STATE IMAGE PICKUP APPARATUS - Provided is an ADC in which a plurality of pixel signals input through a vertical signal line of a solid-state image pickup apparatus are held in advance using some capacitors among a plurality of capacitors within the ADC. A potential of a node is generated by the respective pixel signals held in the capacitors. Thereafter, the potential of the node is changed by changing the voltages of counter electrodes of the capacitors, and the digital values of the pixel signals are generated by comparing the potential of the node with a predetermined potential. | 01-08-2015 |
20150009387 | DATA PROCESSOR, SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS - A data processor including: a reference signal generator to generate a reference signal, used to convert a level of an analog processing signal into digital data; a comparator to compare the processing signal with the reference signal; and a count period controller to perform a real number count operation or a complement number count operation, on the basis of the comparison result of the comparator. The count period controller independently controls the real number count operation and the complement number count operation of the counter on the basis of a predetermined criterion. | 01-08-2015 |
20150009388 | SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate. | 01-08-2015 |
20150009389 | PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter. | 01-08-2015 |
20150015757 | IMAGE SENSOR PIXEL CELL READOUT ARCHITECTURE - An image sensor includes a pixel array including a plurality of pixel cells each including a floating diffusion node, a photosensitive element coupled to selectively transfer image charge to the floating diffusion node, and a feedback coupling capacitor coupled between the floating diffusion node and an output line. A bit line is coupled to selectively readout image data output from each one of a group of the plurality of pixel cells. An integrator is capacitively coupled to the bit line. The integrator is coupled to output an output signal on the output line in response to the image data. The output signal on the output line is capacitively coupled to the floating diffusion node through the feedback coupling capacitor to suppress a potential swing at the floating diffusion node of each one of the group of the plurality of pixel cells in response to the output signal. | 01-15-2015 |
20150015758 | IMAGE SENSOR, PRODUCTION APPARATUS, PRODUCTION METHOD, AND ELECTRONIC DEVICE - Provided is an image sensor including a photoelectric conversion unit for converting a received light into an electric charge; a semiconductor substrate including the photoelectric conversion unit; and a plurality of areas each having a refractive index different from a refractive index of the semiconductor substrate formed between a surface of the semiconductor substrate on which light is incident and the photoelectric conversion unit. Also, provided are an apparatus and a method of producing the image sensor, and an electronic device including the image sensor. | 01-15-2015 |
20150015759 | SELF-RESET ASYNCHRONOUS PULSE FREQUENCY MODULATED DROIC WITH EXTENDED COUNTING AND HAVING REDUCED QUANTIZATION NOISE - The present invention proposes a CMOS sensor pixel with a pulse frequency modulated digital readout integrated circuit (DROIC) comprising a photon sensitive element for receiving a plurality of photons and providing a charge signal indicative of the received photons, an integration capacitor connected to said photon sensitive element for determining a cumulative signal based on the charge signal for a certain integration time and producing an integrator output signal based on the cumulative signal and a comparator connected to the integrator for producing a comparator output signal. Each of said pixels further comprises a DAC that switches at each clock cycle following the end of an integration time and two counters respectively counting nunber of resets of said integration capacitor and voltage difference between an integrator output residue signal and a reference voltage of said comparator. | 01-15-2015 |
20150022703 | SOLID-STATE IMAGING DEVICE, SIGNAL PROCESSING DEVICE AND SIGNAL PROCESSING METHOD FOR SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a pixel array unit in which unit pixels are arranged in a matrix shape and a signal processing circuit that obtains a first video signal and performs processing for combining the first and second video signals. The signal processing circuit includes judging means that judges whether a pixel of interest in the pixel array unit is a pixel to be saturated during an exposure period, calculating means that sets the pixel of interest as a correction pixel and calculates a correction amount on the basis of a luminance value of the second video signal of a peripheral pixel of the correction pixel, and correcting means that applies the correction amount to a luminance value of the first video signal of the correction pixel to thereby correct a noise signal amount due to photo-charges leaking from the peripheral pixel into the correction pixel. | 01-22-2015 |
20150029371 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a pixel array unit, a column ADC circuit, and a calculation circuit are provided. In the pixel array unit, pixels accumulating photoelectric converted charges are arranged in a matrix form. The column ADC circuit performs count operation based on phase relationship between a first clock and a second clock of which cycle is different from that of the first clock by looking up a comparison result between a reference voltage and a pixel signal that is read from the pixel. The calculation circuit calculates an AD conversion value of the pixel signal on the basis of a count result of the column ADC circuit. | 01-29-2015 |
20150029372 | IMAGE SENSOR AND METHOD OF CONTROLLING THE SAME - Provided is an image sensor including a sensor array including a plurality of pixels arranged in rows and columns. The image sensor may include a ramp signal generator which may generate a ramp signal. The intensity of the ramp signal may increase or decrease in response to a ramp enable signal. The image sensor may include an analog-digital converter electrically connected to one of the columns of the pixels. The analog-digital converter may be configured to compare an output signal from the one of the columns of the pixels with the ramp signal, thereby generating time information. The analog-digital converter may be configured to convert the time information to digital information in response to a counter enable signal. An activation of the counter enable signal may be delayed by a predetermined time delay, compared with that of the ramp enable signal. | 01-29-2015 |
20150029373 | IMAGE SENSOR, CONTROL METHOD, AND ELECTRONIC APPARATUS - There is provided an image sensor that includes a pixel array section, a column processing section, and a row control section. The pixel array section is configured to include two or more shared pixel cells arranged in a two-dimensional array, the shared pixel cells each including a plurality of pixels that output electric signals by photoelectric conversion. The column processing section is configured to process the electric signals that are read at the same time from the shared pixel cells on a plurality of rows in the two-dimensional array. The row control section is configured to perform access control differently between one and another of the rows for reading the electric signals from the pixels in the shared pixel cells. | 01-29-2015 |
20150029374 | IMAGE SENSOR, MANUFACTURING APPARATUS AND METHOD, AND IMAGING APPARATUS - The present disclosure relates to an image sensor, a manufacturing apparatus and method, and an imaging apparatus that are capable of further enlarging a charge accumulation region. In the image sensor of this disclosure, a channel portion of a readout transistor that constitutes a pixel and a floating diffusion are formed so as to be overlaid with each other at least partly. For example, the channel portion and the floating diffusion are formed in the form of a column on a surface of a photodiode that constitutes the pixel. This disclosure can be applied to the manufacturing apparatus and method, and the imaging apparatus, in addition to the image sensor. | 01-29-2015 |
20150029375 | SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus including: two-dimensionally arrayed unit pixels, each including a PD performing optical-electrical conversion of an incident light; an FD and two output terminals provided for each of pixel groups, each including one or more unit pixels, the two output terminals being capable of outputting a noise signal and a signal-noise sum signal separately; first and second transfer lines to which the output terminals are connected in common and which are capable of holding noise signal voltage and signal-noise sum signal voltage, respectively; first switches arranged between the output terminals and the first transfer lines; second switches arranged between the output terminals and the second transfer lines; third and fourth switches provided for the transfer lines, respectively; and third and fourth transfer lines to which the transfer lines are connected in parallel via third and fourth switches, respectively. | 01-29-2015 |
20150029376 | SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes: two-dimensionally arrayed unit pixels, each including a PD performing optical-electrical conversion of an incident light; an FD and an output terminal provided for each of pixel groups, each including one or more pixels, the terminal being capable of outputting a noise signal and a signal-noise sum signal separately; first lines to which the terminals are connected in common and which are capable of holding voltages based on signals outputted from the terminals; second lines provided in parallel with the first lines and capable of holding a voltage; inter-transfer-line capacitive elements connecting the second lines and the first lines; a reset switch resetting each of the second lines to a reset voltage; a readout switch provided for each of the second lines; and a third line to which the second lines are connected in parallel via the readout switches, respectively. | 01-29-2015 |
20150036035 | RESET NOISE REDUCTION FOR PIXEL READOUT WITH PSEUDO CORRELATED DOUBLE SAMPLING - Provided are an imaging device implementing pseudo correlated double sampling (CDS), and an imaging method and a control method of the image device. The imaging device includes: a pixel array comprising a pixel configured to generate a current in response to incident light; a readout circuit configured to read out a plurality of output signals of the pixel, the plurality of output signals corresponding to a plurality of consecutive integration periods of the pixel within an aggregating period; and an aggregator configured to aggregate the plurality of output signals read out by the readout circuit to obtain a final aggregated output corresponding to illuminance for the aggregating period, wherein the readout circuit is configured to read out the plurality of output signals by, for each output signal, sampling a signal voltage of the pixel and sampling a subsequent reset voltage of the pixel and obtaining a difference therebetween. | 02-05-2015 |
20150049229 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor comprises an image sensing substrate that in turns includes an image sensing device, a first sensor pixel, a second sensor pixel, and a divider. The divider is between the first sensor pixel and the second sensor pixel. | 02-19-2015 |
20150049230 | IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A method of operating an image sensor includes generating a plurality of sub pixel signals using a sub pixel group. The sub pixel group includes a plurality of sub pixels and corresponds to a single pixel. The method further includes generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage. Each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor. | 02-19-2015 |
20150049231 | SENSORY ARRAY WITH NON-CORRELATED DOUBLE SAMPLING RANDOM ACCESS-RESET PIXEL AND MULTI-CHANNEL READOUT - Integration of high-fidelity readout and compressive readout channels in a signal sensor array system is provided. A high-fidelity representation of the sensor array is recovered by combining the data from both the high-resolution and compressive readout channels. The signal sensory array system uses a non-correlated-double-sampling (non-CDS) pixel block readout, random-access-reset pixel, ADC-integrated image compression, high-resolution successive-approximation-register (SAR) analog-to-digital-converters (ADC), SAR ADC self-calibration, and low-noise time-domain comparator. | 02-19-2015 |
20150049232 | IMAGE SENSOR AND ANALOG TO DIGITAL CONVERTER AND ANALOG TO DIGITAL CONVERTING METHOD THEREOF - An image sensor is provided. The image sensor includes a pixel array having active pixel sensors arranged in rows and columns; a correlated double sampler that converts sensing signals transferred from pixels sensors selected from the active pixel sensors to correlated double sampling signals and outputs a conversion result by column; and an analog-to-digital converter that converts the correlated double sampling signals corresponding to plural columns to digital signals using a global code. The analog-to-digital converter includes a column shared operator that performs a digital conversion operation on correlated double sampling signals corresponding to two or more columns of the plural columns. | 02-19-2015 |
20150054998 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels arranged in an array, each including a photoelectric converter and a transfer transistor, a driving circuit configured to supply a control signal to the transfer transistor of each of the plurality of pixels, and a plurality of driving lines connecting the transfer transistors of the plurality of pixels and the driving circuit. The plurality of pixels include a first pixel and a second pixel connected to the same driving line. A distance from the driving circuit to the first pixel is longer than a distance from the driving circuit to the second pixel. A driving force of the transfer transistor in the first pixel is lower than a driving force of the transfer transistor in the second pixel. | 02-26-2015 |
20150054999 | IMAGE SENSORS FOR GENERATING FLOATING POINT NUMBERS - An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to perform exponent conversion during a first time period at a nominal reference voltage level and to perform mantissa conversion a subsequent time period at an adjustable reference voltage level that can be less than the nominal reference voltage level. Readout circuitry implemented in this way can perform conversion in a shorter period of time using a reduced resolution ADC to serve effectively as a higher resolution ADC. | 02-26-2015 |
20150055000 | FLOATING POINT IMAGE SENSORS WITH DIFFERENT INTEGRATION TIMES - An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a floating point number. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in respective shutter tile column memory circuits. A rolling shutter scheme may be implemented to read signals out from the array. Each tile may be allowed to integrate for a different period of time depending on the exponent value stored in the shutter tile column memory circuits. During readout, the signal generated from the ADC circuitry may represent a mantissa value that is combined with the exponent value to yield a floating point number. | 02-26-2015 |
20150055001 | FLOATING POINT IMAGE SENSORS WITH TILE-BASED MEMORY - An image sensor may include an array of image sensor pixels arranged in rows and columns. Each image pixel arranged along a given column may be coupled to analog-to-digital converter (ADC) circuitry that is capable of converting analog pixel signals into a digital floating point equivalent representation. The ADC circuitry may be configured to obtain an illumination value during an auto exposure period. The illumination value, which serves as an exponent value, can be stored as tile data in a tile column memory circuit. During actual readout, the ADC circuitry may be configured to perform mantissa conversion. During mantissa conversion, the ADC circuitry may use a reference voltage value that is adjusted based on the tile data. A mantissa value that is obtained during the mantissa conversion may then be combined with the exponent value for that tile to yield a final floating number point for that image pixel. | 02-26-2015 |
20150055002 | MULTIMODE PIXEL READOUT FOR ENHANCED DYNAMIC RANGE - An image sensor having image sensor pixels operable in multiple gain modes is provided. An image sensor pixel may include a photodiode, a charge transfer transistor, a reset transistor, a source follower (SF) transistor, a row select transistor, and a capacitor that is directly connected across the gate terminal and a selected source-drain terminal of the SF transistor. The SF transistor and the row select transistor may be selectively coupled to a power supply line and a column output line by asserting either a first control signal or a second control signal. The first control signal is asserted to place the pixel in a low conversion gain mode, whereas the second control signal is asserted to place the pixel in a high conversion gain mode. The charge transfer transistor may always be activated during the low conversion gain mode and may be selectively activated during the high conversion gain mode. | 02-26-2015 |
20150070553 | IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME - A method of operating an image sensor, which includes a plurality of pixels including a photo diode that accumulates photocharges generated according to incident light, is provided. The method includes changing a potential of the photo diode by applying a hulk control signal at a first voltage level to a ground terminal, transferring the photocharges accumulated at the photo diode to a floating diffusion node, and generating a pixel signal according to a potential of the floating diffusion node. | 03-12-2015 |
20150070554 | SOLID-STATE IMAGING APPARATUS, DRIVING METHOD FOR THE SAME, AND IMAGING SYSTEM - A solid-state imaging apparatus includes: a photoelectric conversion unit configured to convert light into an electric charge; a floating diffusion region configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge from the photoelectric conversion unit to the floating diffusion region; and a transfer transistor driving circuit configured to control a gate potential of the transfer transistor, wherein the transfer transistor driving circuit controls the gate potential so as to be changed in at least two changing rates during a period of transition from the ON state to the OFF state of the transfer transistor, and the second changing rate out of the two changing rates is higher than the first changing rate. | 03-12-2015 |
20150070555 | COMPRESSIVE IMAGE SENSING DEVICE AND METHOD - A CMOS image sensor including: a plurality of pixels; a first analog circuit for calculating one or a plurality of statistical estimators based on the analog output values of sensor pixels; and a second circuit capable of implementing a compressive image sensing method, wherein the applied compression rate is a function of the statistical estimator(s) calculated by the first circuit. | 03-12-2015 |
20150077611 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes unit cells including a photoelectric conversion element, a signal detector and the amplifier transistor, respectively; a vertical signal line supplied with a reset signal and a pixel signal of the cell; a first interconnect connected to the signal detectors via a capacitance element; a second interconnect connected between the signal detectors and the amplifier transistors; and a switch element between the vertical signal line and the first interconnects. Unit cells arranged in a column direction is connected to a common vertical line and a common first interconnect. | 03-19-2015 |
20150077612 | IMAGING APPARATUS, IMAGING METHOD, MANUFACTURING APPARATUS, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS - There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF. | 03-19-2015 |
20150077613 | Foveal Imager Readout Integrated Circuit (ROIC) - An image comprising a plurality of pixels at a predetermined pixel pitch, is received, A plurality of image intensity signals, are received at readout circuitry responsive to an image intensity per pixel. A portion of the received image is divided into a plurality of fixed paxels, each paxel comprising a rectilinear collection of pixels, having a first length and first predetermined number of rows, and second width having second predetermined number of columns. The plurality of fixed paxels are provided to a respective plurality of configurable Analog to Digital Converters (ADCs) responsive to a respective plurality of paxels and configurable to generate respective ADC output signals that implement a tradeoff between Effective Number of Bits (ENoB) and power consumption while maintaining a substantially fixed spatial frequency. Some paxels corresponding to a first predetermined fixation point are digitized with higher ENoB than the other paxels. A foveated image is generated. | 03-19-2015 |
20150092097 | IMAGING APPARATUS - An imaging apparatus comprises: a pixel generating a photoelectric conversion signal; a comparator configured to compare a base signal based on the pixel at a reset state with a time-changing first reference signal, and for comparing an effective signal based on the pixel at a non-reset state with a time-changing second reference signal, wherein the second reference signal has a larger time-changing ratio than that of the second reference signal; a counter configured to count a first count value until an inversion of a magnitude relation between the base signal and the first reference signal, and configured to count a second count value until an inversion of a magnitude relation between the effective signal and the second reference signal; a correcting unit configured to correct a difference of resolutions of the first and second count values, and configured to correct a difference between the first and second count values corrected. | 04-02-2015 |
20150097998 | IMAGING DEVICE AND METHOD OF PRODUCING THE SAME - An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied. | 04-09-2015 |
20150103221 | IMAGING SENSOR, IMAGING APPARATUS, ELECTRONIC DEVICE, AND IMAGING METHOD - There is provided an image sensor including at least three pixel transfer control signal lines, on a per line basis, configured to control exposure start and end timings of a pixel in order for exposure timings of a plurality of the pixels constituting one line in a specific direction to have at least three patterns. | 04-16-2015 |
20150109506 | SOLID-STATE IMAGE SENSING DEVICE - A CMOS image sensor used as a solid-state image sensing device includes a pixel circuit for outputting a voltage of a level corresponding to the illuminance, and an A/D converter for converting an output voltage of the pixel circuit into a digital signal. The resolution on the low illuminance side is higher than the resolution on the high illuminance side in the A/D converter. Thus, the dynamic range can be increased and the operation speed can be increased, compared to the case in which the resolution is constant independent of the illuminance. | 04-23-2015 |
20150116564 | ADDRESS MAPPED REPARTITIONED DIGITAL PIXEL - By adding stabilization and super-sampling to a digital pixel readout integrated circuit (ROIC), line of sight motion, that is usually costly and difficult to control, instead becomes an ally, doubling the effective FPA resolution in some systems. The base repartitioned digital pixel architecture supplements analog signal accumulation with off-pixel digital accumulation, greatly increasing dynamic range. Adding address mapping and increasing the ratio of memory locations to pixels, enables stabilization and resolution enhancement. Additional stabilization at sub-frame intervals limits the effect of latency and simplifies complex address mapping. Pixels gains are compensated in-ROIC, without requiring multipliers. A unique partitioning of functions between the ROIC and subsequent logic allows pixel biases and non-isomorphic sampling effects to be compensated off-ROIC, reducing overall system complexity and power. | 04-30-2015 |
20150116565 | IMAGE SENSOR AND DEVICES HAVING THE SAME - An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge. | 04-30-2015 |
20150116566 | SOLID STATE IMAGING DEVICE, SIGNAL PROCESSING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a group of a plurality of pixels configured to include pixels of the same color coding and with no pixel sharing between each other; and a color filter that is formed by Bayer arrangement of the group of a plurality of pixels. | 04-30-2015 |
20150124137 | A/D CONVERSION DEVICE, SOLID-STATE IMAGE-CAPTURING DEVICE, AND ELECTRONIC DEVICE - The present invention is to provide an A/D conversion device, a solid-state image-capturing device, and an electronic device capable of removing fixed pattern noise, capable of preventing an image from being corrupted, capable of generating an appropriate carry signal during bit shift, and capable of avoiding bit inconsistency even when the frequency of the carry signal increases due to the bit shift. A reading unit includes a comparator configured to compare the analog signal potential with a reference signal of which slope is variable, a counter latch unit capable of AD conversion based on processing according to the output of the comparator, and a bit shift function unit capable of bit-shifting the digital data obtained by the counter latch unit, and when digital Correlated Double Sampling (CDS) is performed with a first signal and a second signal having different bit precisions obtained from the comparison with reference signals of different slopes, the bit shift function unit bit-shifts the first signal or the second signal. | 05-07-2015 |
20150124138 | SOLID-STATE IMAGE SENSING DEVICE - Provided is a solid-state image sensing device that performs an A/D conversion operation at high speed. A sample-and-hold section | 05-07-2015 |
20150124139 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions. | 05-07-2015 |
20150124140 | SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS - A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate. | 05-07-2015 |
20150124141 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, AND IMAGING DEVICE - a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time. | 05-07-2015 |
20150130977 | IMAGE SENSORS WITH N-ROW PARALLEL READOUT CAPABILITY - An image sensor configured to readout an arbitrary number of rows in parallel is described, comprising a rolling global shutter pixel array which can be operated as a true global shutter. Shielding structures may be formed in the pixel array to minimize signal coupling between adjacent pixels when multiple rows are simultaneously reset and read out. A plurality of column select lines may be formed in a given pixel pitch, and the image sensor may utilize read out components and circuitry associated with conventional readout circuits to be used in simultaneously reading out a two-dimensional region of the image sensor. The image sensor may be configured to use charge binning between rows that are reset and read out in parallel to improve power consumption. The image sensor may include redundant output stages with routing circuitry that improves image sensor yield by compensating for yield loss in the output stage. | 05-14-2015 |
20150138415 | IMAGE SENSOR AND IMAGE SENSING SYSTEM - An image sensor including a pixel unit in which a plurality of pixels are arranged in a matrix, an A/D conversion circuit provided corresponding to each column of the matrix and configured to A/D-convert a pixel signal output from the pixel unit and output digital data corresponding to the pixel signal, a memory provided on each column, and a redundant data generation unit configured to generate redundant data based on a generating rule of an error correction code for the digital data, wherein the digital data and the redundant data are stored in the memory. | 05-21-2015 |
20150146066 | SAR ANALOG-TO-DIGITAL CONVERTING APPARATUS AND OPERATING METHOD THEREOF AND CMOS IMAGE SENSOR INCLUDING THE SAME - A Successive Approximation Register (SAR) analog-to-digital converting apparatus includes a reference voltage supply unit suitable for supplying different reference voltages depending on bits of a pixel output signal to be converted, an N bit SAR analog-to-digital conversion unit suitable for sequentially converting upper N−1 bits and lower N bits of the pixel output signal by selectively using the reference voltages supplied from the reference voltage supply unit, where N is a natural number, and an error correction unit suitable for calculating an error correction value based on a difference between conversion results of the lower N bits, and outputting a 2N−2 bit analog-to-digital conversion result by combining converted upper N−1 bits and converted lower N bits and correcting an error of the reference voltages using the error correction value in the combining. | 05-28-2015 |
20150146067 | PIXEL ARRAY AND IMAGE SENSOR INCLUDING SAME - A pixel array to which a high dynamic range and a white pixel are applied, and an image sensor including the same are provided. The pixel array of the image sensor includes: a plurality of pixel groups, each pixel group including one or more long exposure pixels and one or more short exposure pixels, wherein each pixel group includes a first pixel, among the one or more long exposure pixels and the one or more short exposure pixels, having a white component and second to fourth pixels, among the one or more long exposure pixels and the one or more short exposure pixels, having first to third color components, the first pixel belonging to a first pixel group is a long exposure pixel, and the first pixel belonging to a second pixel group that is adjacent to the first pixel group is a short exposure pixel. | 05-28-2015 |
20150296158 | Reconfigurable CMOS Image Sensor - CMOS image sensors are generally customized and designed for specific functions and capabilities. Chip layout design and the development of fabrication schemes are very expensive. This high non-recurring engineering cost presents a significant barrier to the development of chips performing new processing schemes, for example specialty chips for small markets. Accordingly, there is a need in the art for simplified means of providing customized image sensors. Disclosed herein are novel stacked image sensors comprising an image sensor wafer stacked on one or more customizable processing wafers. The processing wafer comprises one or more reconfigurable components that can be programmed and customized to perform a very broad set of operations, providing the art with a means of obtaining a customizable image sensor without the substantial non-recurring engineering costs encountered using current technologies. Reconfigurable components include ADC components, memory components, chip control components, data processing components, and I/O interface components. | 10-15-2015 |
20150296159 | Image Sensors Comprising Hybrid Arrays of Global and Rolling Shutter Pixels - Provided herein are novel hybrid sensor arrays comprising both global and rolling shutter pixels. The hybrid pixel arrays of the invention can be made predominantly of inexpensive rolling shutter pixels, augmented with smaller number of global shutter pixels. Data from the global shutter pixels can be used in various ways, for example, to rectify rolling shutter artifacts captured by the majority of the pixels in the array. These novel designs and associated methods advantageously enable the correction of rolling shutter artifacts while retaining the advantages of rolling shutter pixel cost and ease of manufacture. | 10-15-2015 |
20150296163 | IMAGE CAPTURING APPARATUS AND IMAGE CAPTURING SYSTEM - An image capturing apparatus includes: plural pixels arranged in matrix, each outputting a signal from a photoelectric conversion element; and plural readout circuits each provided for a corresponding column of the pixels, signals from the pixels being input to the readout circuits. The readout circuit includes an amplifier unit configured to amplify the signal from the pixel, and have a variable gain, and a hold capacitance connected to an output terminal of the amplifier unit via a sampling switch, and having a variable capacitance value. When the variable gain of the amplifier unit is set to be a first gain, the variable capacitance value of the hold capacitance is set to be a first capacitance value. When the variable gain is set to be a second gain larger than the first gain, the variable capacitance value is set to be a second capacitance value smaller than the first capacitance value. | 10-15-2015 |
20150296164 | SOLID-STATE IMAGE SENSOR, METHOD OF CONTROLLING THE SAME, ELECTRONIC DEVICE, AND STORAGE MEDIUM - A stacked-type solid-state image sensor including a first semiconductor layer in which an imaging pixel portion is implemented, and a second semiconductor layer in which a digital signal processing unit is implemented, comprises a first timing control unit configured to generate a drive timing signal of the imaging pixel portion, an A/D converter configured to convert an analog signal output from each pixel of the imaging pixel portion into a digital signal, a second timing control unit configured to generate a drive timing signal of the A/D converter; and a status generation unit configured to receive an event signal generated by at least one of the first timing control unit and the second timing control unit and generate a status signal to restrict an operation of the digital signal processing unit. | 10-15-2015 |
20150304577 | IMAGE-SENSING METHOD HAVING A VERY SHORT INTEGRATION TIME - The invention relates to image sensors, and more particularly to matrix sensors having active pixels in CMOS technology. | 10-22-2015 |
20150304578 | SOLID-STATE IMAGE SENSING DEVICE AND ELECTRONIC DEVICE - The present invention provides a technique for achieving higher picture quality of a captured image by reducing noise which occurs at the time of resetting in a solid-state image sensing device and the like. A pixel array in a solid-state image sensing device includes a plurality of pixels and includes an OB pixel region and an effective pixel region. The solid-state image sensing device has a signal processing unit outputting a pixel signal of each of the pixels in the effective pixel region on the basis of the signal level of a signal output from each of the pixels. The solid-state image sensing device obtains a signal without applying a reset signal to each of the pixels in the OB pixel region, obtains the difference between the signal and a signal of a pixel in the effective pixel region, and outputs an image signal. | 10-22-2015 |
20150312461 | IMAGE SENSOR INCLUDING A PIXEL HAVING PHOTOELECTRIC CONVERSION ELEMENTS AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR - An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels. | 10-29-2015 |
20150312492 | IMAGE DATA PROCESSING DEVICE HAVING IMAGE SENSOR WITH SKEWED PIXEL STRUCTURE - An image data processing device includes an image sensor which includes a first pixel disposed in a first layer and a second pixel which is disposed in a second layer and is partially overlapped with the first pixel to form an overlapped area, and is configured to output a first signal from the first pixel and a second signal from the second pixel; and an image signal processor configured to output a first data for the overlapped area using a ratio for the overlapped area between the first pixel and the second pixel and the first signal, and output a second data for the overlapped area using the ratio and the second signal. | 10-29-2015 |
20150312503 | IMAGING SYSTEM, IMAGING APPARATUS, AND IMAGING METHOD - An imaging system includes an encoding apparatus that performs a multiple sampling process on charge signals in a plurality of wavelength bands and encodes image information and a decoding apparatus that decodes the image information. In the multiple sampling process, the charge signals of pixels in a pixel group having a predetermined arrangement pattern are analog-summed and the sum is converted into a new digital signal. The encoding apparatus performs the multiple sampling process on charge signals in at least two of the wavelength bands and outputs a digital image signal in each of the wavelength band. The at least two pixel groups have different arrangement patterns, and combinations of the arrangement patterns for all the wavelength bands differ from one another. The decoding apparatus generates a reconstructed image from the digital image signals in the wavelength bands using multiple sampling information and outputs the image. | 10-29-2015 |
20150319383 | METHOD OF READING OUT A CMOS IMAGE SENSOR AND A CMOS IMAGE SENSOR CONFIGURED FOR CARRYING OUT SUCH METHOD - The invention relates to a method of reading out a CMOS image sensor. The respective pixels having a first mode and a second mode. The method comprises: i) setting a respective pixel (Pxl) in the first mode (SS); ii) resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde) and the first capacitance (C_low); iii) collecting charge carriers generated by the incident light on the respective photo-diode (Dde), wherein the collected charge carriers reduce the pixel potential (Vp) on the respective photo-diode (Dde) iv) reading out the respective pixel (Pxl) while set in the first mode (SS) and storing the pixel potential (Vp); v) reading out the respective pixel (Pxl) while set in the second mode (LS) and storing the pixel potential (Vp); vi) resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high); vii) reading out the respective pixel (Pxl) while set in the second mode (LS) and storing the pixel potential (Vp), and viii) reading out the respective pixel (Pxl) while set in the first mode (SS) and storing the pixel potential (Vp). The method results in an increased dynamic range of the CMOS image sensor. The invention also relates to the CMOS image sensor as such. | 11-05-2015 |
20150325620 | SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating film to cover the gates of the first and second MOSs, etching the first insulating film in the peripheral circuit area in a state that the pixel area is masked to form a side spacer on a side face of the gate of the second MOS, etching the first insulating film in the pixel area in a state that the peripheral circuit area is masked, and forming the second insulating film to cover the gates of the first and second MOSs and the side spacers. | 11-12-2015 |
20150326803 | AD CONVERTER, SIGNAL PROCESSING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is an AD converter including a first AD converting unit in which pixel columns of a pixel array are divided into at least two groups, and that compares a first ramp signal and a first pixel signal output from a first group of the pixel columns and performs AD conversion on the first pixel signal; and a second AD converting unit that compares a second ramp signal and a second pixel signal output from a second group of the pixel columns and performs AD conversion on the second pixel signal, in which the first ramp signal is a signal of which a level is decreased with a constant slope over time in a D-phase period for detecting a signal level of a pixel signal, and the second ramp signal is a signal of which a level is increased with a constant slope over time in the D-phase period. | 11-12-2015 |
20150326804 | BIAS SAMPLING DEVICE AND CMOS IMAGE SENSOR INCLUDING THE SAME - A bias sampling device includes a reference current generation unit suitable for generating a reference current; a plurality of multi-staged current mirror circuits suitable for receiving the reference current generated from the reference current generation unit and outputting a bias voltage; and a bias sampling unit suitable for performing sampling on a first bias voltage of a first current mirror circuit of the plurality of multi-staged current mirror circuits, wherein the first bias voltage of the first current mirror circuit, which is located prior to a final-staged current mirror circuit of the plurality of multi-staged current mirror circuits, is preset. | 11-12-2015 |
20150326807 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines. | 11-12-2015 |
20150326811 | COLUMN A/D CONVERTER, COLUMN A/D CONVERSION METHOD, SOLID IMAGING DEVICE, AND CAMERA SYSTEM - The present invention relates to a column A/D converter, column A/D conversion method, imaging device, and camera system that can reduce the amount of IR drop by dispersing the current consumed during the count operation, mitigate the counter characteristic degradation, readily reduce the amount of fluctuation in the power source voltage, and achieve operation at a low power source voltage. The column A/D converter includes a plurality of column processing units including an A/D conversion function, a plurality of counters configured to generate digital codes in response to a reference clock and arranged corresponding to each or a set of the column processing units, and a count start offset unit configured to trigger a pseudo count operation in each of the counters and to offset a count start code for at least two or more counters among the plurality of counters before the reference clock is supplied to the counters. | 11-12-2015 |
20150326836 | IMAGE SENSING DEVICE - An image sensing device includes: a pixel array including a plurality of pixels arranged in row and column directions; a row control portion suitable for controlling a part of a plurality of rows included in the pixel array by an unit of two or more sequential rows so that pixel signals are simultaneously outputted from the pixel array through the sequential rows; a first readout circuit portion suitable for sequentially reading out a part of the pixel signals in row sequence order; a second readout circuit portion suitable for sequentially reading out the rest of the pixel signals in row sequence order; and a storage portion suitable for storing on row by row basis the read out signals sequentially read out in row sequence order from the first and second readout circuit portions. | 11-12-2015 |
20150334327 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit. | 11-19-2015 |
20150334329 | SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING THE SAME, AND CAMERA SYSTEM - A solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven. | 11-19-2015 |
20150341531 | CAMERA MODULE AND SOLID-STATE IMAGING DEVICE - According to embodiments, a camera module has a lens unit, a photoelectric converting section configured to perform photoelectric conversion on light incident through the lens unit and output image data, and a frame composer configured to output frame data obtained by adding vector data calculated from an angular velocity signal to the image data output from the photoelectric converting section. | 11-26-2015 |
20150341578 | Curved Image Sensor for a Curved Focal Surface - This document describes curved image sensors capable of sensing light from a monocentric lens. This curved image sensor receives light focused at a curved focal surface and then provides electric signals from this curved image sensor to a planar computing chip, such as a CMOS chip. By so doing, the higher image quality, smaller size, and often smaller weight of monocentric lenses can be gained while using generally high-quality, low-cost planar chips. | 11-26-2015 |
20150341585 | IMAGE SENSOR, METHOD OF OPERATING THE SAME, AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME - The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode. | 11-26-2015 |
20150349013 | METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA - A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor. | 12-03-2015 |
20150350574 | IMAGE SENSOR AND CONTROL METHOD THEREOF, AND IMAGE CAPTURING APPARATUS - An image sensor comprises: a plurality of pixels; a plurality of column output lines; and a control unit configured to control a signal to be output from pixels selected from the plurality of pixels to the plurality of column output lines, and each of the plurality of pixels includes: a photoelectric conversion portion; a floating diffusion portion for holding charge transferred from the photoelectric conversion portion; and an addition portion to add capacitance to the floating diffusion portion. The control unit controls to add the capacitance to the floating diffusion portion in a case where signals are simultaneously output to the same column line from the selected pixels. | 12-03-2015 |
20150350585 | RAMP SIGNAL CALIBRATION APPARATUS AND METHOD AND IMAGE SENSOR INCLUDING THE RAMP SIGNAL CALIBRATION APPARATUS - Provided are a ramp signal calibration apparatus and method and image sensor including the apparatus. The apparatus includes: an analog-to-digital converter (ADC) including a trimmable transistor having a gain value that varies according to stored data , and configured to receive a ramp signal in a state where the gain value is a first gain value, and to output first and second output signals; a subtractor configured to calculate a difference between the first and second output signals; a digital comparator configured to compare the difference with a reference value and to determine whether a slope of the ramp signal has changed; and a counter configured to change the stored data based on whether the slope of the ramp signal has changed, wherein when the counter changes the data, the first gain value of the trimmable transistor is changed to a second gain value according to the changed data. | 12-03-2015 |
20150358568 | SOLID-STATE IMAGE CAPTURING APPARATUS, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device, with (a) a pixel array unit including two-dimensionally arranged pixels each including (i) a photoelectric conversion element, (ii) a select transistor configured to perform pixel selection, and (iii) a charge discharging transistor configured to selectively discharge the charges accumulated in the photoelectric conversion element; and (b) driving circuitry operable to drive reading of output signals from the pixels of the pixel array unit, for each pixel the driving circuitry driving the charge discharging transistor using a select transistor driving signal | 12-10-2015 |
20150358571 | ADVANCED REGION OF INTEREST FUNCTION FOR IMAGE SENSORS - The present invention relates to reading-out sensor array pixels. In particular, the present invention provides an approach according to which only a region of interest is may be read out from the sensor array, thus leading to substantial time savings. In order to achieve this, a circuitry for configuring a region of interest for the sensor array is provided as well as a reading-out circuitry for reading-out pixels belonging to the region of interest. In addition, the corresponding methods for programming the region of interest and for reading-out the region of interest are provided. The circuitry for programming and/or reading-out the region of interest includes per pixel provided storage elements for storing an indication of whether a pixel belongs to a region of interest (ROI). These are configured by the programming circuitry and using when reading-out the ROI for only reading out the pixels of the ROI. | 12-10-2015 |
20150365567 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips. | 12-17-2015 |
20150365610 | AUTOMATIC REGION OF INTEREST FUNCTION FOR IMAGE SENSORS - The present invention relates to reading-out sensor array pixels. In particular, the present invention provides an approach according to which only a region of interest with arbitrary geometry may be read out from the sensor array, thus leading to substantial time savings. In order to achieve this, a circuitry is provided for automatic determining of a ROI and reading out the ROI from the sensor array. The circuitry includes a fast reading-out circuitry which is less precise but faster than the accurate reading-out circuitry for reading-out the pixels of the sensor array. The fast reading-out circuitry reads out the pixels with low-level precision and determines by the processing of the fast read-out pixels the ROI which is then provided to an in-pixel ROI programming circuit for storing the ROI identification and by means thereof to the accurate reading-out circuit which then reads out only the pixels determined to belong to the ROI. The accurate read-out circuit is slower than the fast read-out circuit. | 12-17-2015 |
20150370012 | IMAGING APPARATUS - An imaging apparatus includes an imaging optical system, an imaging element, and an optical fiber bundle composed of a plurality of optical fibers configured to guide light from the imaging optical system to the imaging element. Each of the optical fibers includes a core portion and a clad portion around the core portion. A diameter of the core portion on a light emit face of the optical fibers is larger than a diameter of the core portion on a light incident face. An optical fiber not parallel to an optical axis of the imaging optical system satisfies the following expression: | 12-24-2015 |
20150372043 | SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC APPARATUS - A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region. | 12-24-2015 |
20150381916 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device including a photoelectric conversion portion photoelectrically converting incident light into signal charge and accumulate the signal charge, a plurality of signal lines including a transfer signal line to which a transfer signal for reading the signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting a plurality of desired signals into the plurality of signal lines including the transfer signal line, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of the plurality of desired signals with respect to a signal line adjacent to the transfer signal line of the plurality of signal lines is input to the signal line adjacent to the transfer signal line. | 12-31-2015 |
20150381918 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns. | 12-31-2015 |
20160005784 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THEREOF, AND ELECTRONIC APPARATUS - Provided is a solid-state image pickup device including: a plurality of pixels, each of which includes a photoelectric conversion portion and a pixel transistor formed in a front surface side of a substrate, wherein a rear surface side of the substrate is set as a light receiving plane of the photoelectric conversion portion; and an element, which becomes a passive element or an active element, which is disposed in the front surface side of the substrate so as to be superimposed on the photoelectric conversion portion. | 01-07-2016 |
20160006957 | IMAGE SENSORS, METHODS OF OPERATING THE SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - An image sensor may include a comparator including a first input terminal configured to receive a reset signal, a second input terminal configured to receive an image signal, a third input terminal configured to receive a ramp signal configured to ramp in one direction, and an output terminal. The comparator may further include a switch circuit including a plurality of switches. The comparator may be configured to compare the reset signal with the ramp signal and output a first comparison signal through the output terminal according to a first arrangement of the switches in a reset phase and the comparator may be configured to compare the image signal with the ramp signal and output a second comparison signal through the output terminal according to a second arrangement of the switches in an image phase. | 01-07-2016 |
20160006965 | IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE SAME, AND PORTABLE ELECTRONIC DEVICE INCLUDING THE SAME - An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel. | 01-07-2016 |
20160006966 | IMAGING DEVICE - An imaging device comprising: a pixel array that includes pixels arranged in rows and columns, each of the pixels outputting a pixel signal; vertical signal lines each of which is provided for each of the columns; a reference-signal generator that generates a reset signal corresponding to a reset voltage of the pixels; a signal processor that outputs a differential signal corresponding to a difference between the pixel signal and the reset signal; a first switch that is connected between one of the vertical signal lines and the signal processor, the first switch switching between input and interruption of the pixel signal from each of the pixels to the signal processor; and a second switch that is connected between the reference-signal generator and the signal processor, the second switch switching between input and interruption of the reset signal from the reference-signal generator to the signal processor. | 01-07-2016 |
20160006969 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD, AND ELECTRONIC DEVICE - Provided is a solid-state imaging device including: a pixel section configured to include a plurality of pixels arranged in a matrix form, the plurality of pixels performing photoelectric conversion; column signal lines configured to transmit pixel signals output from the pixels in units of columns; an AD converting section configured to include a comparator that compares a reference signal serving as a ramp wave with the pixel signals transmitted via the column signal line and convert a reference level and a signal level of the pixel signals into digital signals independently based on a comparison result of the comparator; a switch configured to be connected with the column signal lines; and a control section configured to turn on the switch only during a certain period of time in a period of time in which the comparator is reset and cause the column signal lines to be short-circuited. | 01-07-2016 |
20160014361 | CORRELATED MULTIPLE SAMPLING CMOS IMAGE SENSOR | 01-14-2016 |
20160014363 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS | 01-14-2016 |
20160014365 | SOLID-STATE IMAGING DEVICE, IMAGE DATA TRANSMISSION METHOD, AND CAMERA SYSTEM | 01-14-2016 |
20160021318 | IMAGE SENSOR - An image sensor includes a comparator configured to compare a pixel signal with a ramp signal and generate a comparison signal and a counter configured to be reset by a counter reset value based on an offset of the comparator and to generate a digital pixel signal according to the comparison signal. | 01-21-2016 |
20160021321 | IMAGE SENSOR INCLUDING ROW DRIVERS AND IMAGE PROCESSING SYSTEM HAVING THE IMAGE SENSOR - An image sensor includes multiple pixel groups arranged in a row included in a pixel array, the row including multiple pixels respectively allocated to the multiple pixel groups. The image sensor further includes multiple row drivers configured to respectively control operations of the pixels respectively allocated to the pixel groups in the row, and multiple readout circuits configured to respectively read out pixel signals output by the pixels respectively allocated to the pixel groups in the row. | 01-21-2016 |
20160027830 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan. | 01-28-2016 |
20160037113 | PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM, AND DRIVING METHOD FOR THE PHOTOELECTRIC CONVERSION APPARATUS - An output control unit configured to set an amplitude of a signal output to a signal line to be smaller as compared with a case where an amplification unit outputs a signal on the basis of a potential of the input node or put the amplification unit into a non-operating state is provided. | 02-04-2016 |
20160037117 | SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP SYSTEM - At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units. | 02-04-2016 |
20160044264 | SOLID-STATE IMAGE PICKUP DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS - A photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof, a transfer transistor (TRG) that transfers the charges accumulated by the photoelectric conversion element, a first charge voltage conversion section that converts the charges transferred by the transfer transistor (TRG) into a voltage, and a substrate electrode of a MOS capacitor (a region of a second charge voltage conversion section facing a gate electrode) that connects the first charge voltage conversion section via a connection transistor (FDG). The gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the first charge voltage conversion section and in a period other than the read period. The present disclosure can also be applied to a CMOS image sensor or the like. | 02-11-2016 |
20160044265 | SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - Provided is a solid-state imaging device in which a first substrate and a second substrate having circuit elements, which constitute pixels, arranged thereon are electrically connected to each other. Each pixel includes: a photoelectric conversion unit disposed on the first substrate that outputs a signal based on incident light; a sampling transistor disposed on the second substrate that includes a gate terminal, a source terminal, and a drain terminal, that samples and holds the signal input from the photoelectric conversion unit to a first terminal, and outputs the sampled and held signal from a second terminal; a capacitor disposed on the second substrate that stores the signal output from the second terminal; and a potential fixing circuit that fixes a potential of the first terminal to a potential based on a predetermined fixed potential during a readout period in which the signal stored in the capacitor is read out. | 02-11-2016 |
20160044266 | SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - A solid-state imaging element that includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line. | 02-11-2016 |
20160049432 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device has a first substrate and a second substrate in which circuit elements constituting pixels are arranged. The pixel includes: a pixel section that includes a photoelectric conversion element; a ground potential controller that switches a potential to which a circuit element included in the pixel section is grounded; and a reading section that outputs a signal corresponding to the signal charge as a pixel signal output by the pixel. The pixel section includes: the photoelectric conversion element; an amplification transistor that outputs an amplification signal amplified according to the signal charge generated by the photoelectric conversion element; and a switch circuit that switches a ground of the amplification transistor according to a first output mode and a second output mode. The ground potential controller supplies a first potential in the first output mode and supplies a second potential in the second output mode. | 02-18-2016 |
20160057320 | SOLID-STATE IMAGE PICKUP UNIT, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS - A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region. | 02-25-2016 |
20160065867 | DIGITAL DOUBLE SAMPLING METHOD, A RELATED CMOS IMAGE SENSOR, AND A DIGITAL CAMERA COMPRISING THE CMOS IMAGE SENSOR - A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage. | 03-03-2016 |
20160065871 | SOLID-STATE IMAGE PICKUP APPARATUS, SIGNAL PROCESSING METHOD FOR A SOLID-STATE IMAGE PICKUP APPARATUS, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range. | 03-03-2016 |
20160065872 | IMAGE SENSOR - An image sensor includes readout circuits coupled to read out integrated light signals from pixels via bitlines respectively. Each readout circuit includes a correlated double sampling (CDS) circuit, followed by an analog-to-digital converter (ADC). At least two pixels of a row share a bitline and an associated readout circuit. The ADC operates concurrently with the CDS circuit, such that their operating periods are substantially overlapped with each other. | 03-03-2016 |
20160065875 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines. | 03-03-2016 |
20160071901 | IMAGING DEVICE AND IMAGING SYSTEM - An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another. | 03-10-2016 |
20160080673 | High Definition Camera And Method - A high definition (HD) camera and a method for implementing the HD camera is described. A CMOS sensor of high frame rate captures frame images and provides light to N consecutive frame images with an interval of M consecutive frame images in the captured frame images using an auxiliary light source when the auxiliary light source is on. The auxiliary light source turns on and off according to a duty cycle. The M is 0 or a positive integer. The N is a positive integer. The mechanism has good light performances, reduced deformation of moving objects, and reduced costs. | 03-17-2016 |
20160088247 | METHOD FOR DRIVING PHOTOELECTRIC CONVERSION DEVICE - After accumulating electric charges in pixels in first, second, and third rows, signals are output from the pixels in the first and second rows in a first frame, and thereafter, after accumulating electric charges in the pixels in the first row without accumulating electric charges in the pixels in the second and third rows, signals are output from the pixels in the first and third rows in a second frame following the first frame. Furthermore, the photoelectric conversion units of the pixels in the second and third rows are reset by the resetting units included in the pixels in the second and third rows in the first frame. | 03-24-2016 |
20160088250 | PIXEL ARRAY WITH SHARED PIXELS IN A SINGLE COLUMN AND ASSOCIATED DEVICES, SYSTEMS, AND METHODS - Pixel array with shared pixels in a single column and associated devices, systems, and methods are disclosed herein. In one embodiment, a pixel array includes a floating diffusion region, a source a source follower transistor having a gate coupled to the floating diffusion region, a plurality of first pixels associated with a first color, and a plurality of second pixels associated with a second color different than the first color and arranged in a single column with the first pixels. The first and second pixels are configured to transfer charge to the floating diffusion region. | 03-24-2016 |
20160088252 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR DRIVING THE SAME IN SOLID-STATE IMAGING PICKUP DEVICE AND METHOD FOR DRIVING THE SAME IN A NUMBER OF MODES - A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals. | 03-24-2016 |
20160094794 | SOLID-STATE IMAGE PICKUP APPARATUS, SIGNAL PROCESSING METHOD FOR A SOLID-STATE IMAGE PICKUP APPARATUS, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range. | 03-31-2016 |
20160118978 | REFERENCE VOLTAGE GENERATOR HAVING NOISE CANCELLING FUNCTION AND CMOS IMAGE SENSOR USING THE SAME - The reference voltage generator may include a reference current generation unit suitable for generating a reference current based on a first power supply voltage and a first ground voltage, a current amount adjustment unit suitable for adjusting a current amount of the reference current generated by the reference current generation unit based on a second power supply voltage and a second ground voltage, and a reference voltage generation unit suitable for generating a reference voltage corresponding to the reference current, of which the current amount is adjusted by the current amount adjustment unit, based on the first power supply voltage and the first ground voltage. | 04-28-2016 |
20160119568 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE - An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring. | 04-28-2016 |
20160119569 | IMAGE SENSOR AND METHOD OF CONTROLLING THE SAME - According to embodiments of the present invention, an image sensor is provided. The image sensor includes a plurality of photodetectors, a plurality of pixel circuits, each pixel circuit including a first transistor, wherein the first transistor is coupled to a respective photodetector of the plurality of photodetectors, and an interconnection bus, wherein, in an imaging mode, the plurality of photodetectors are configured for imaging, and wherein, in a sensing mode, the plurality of photodetectors are configured to detect ambient light condition, and wherein the interconnection bus is connectable between the plurality of pixel circuits and an ambient light readout circuit to carry signals corresponding to the detected ambient light condition from the plurality of photodetectors through the first transistors to the ambient light readout circuit. According to further embodiments, a display including an image sensor and a method of controlling an image sensor are also provided. | 04-28-2016 |
20160119570 | CMOS IMAGE SENSOR AND IMAGING METHOD IMPLEMENTING CORRELATED DOUBLE SAMPLING AND COMPRESSION - An image sensing device may include one or more compression modules that compress digitized pixel reset values obtained from light sensing elements. The device may perform a CDS operation in which the compressed reset values are stored, decompressed, and then subtracted from light dependent values obtained from the light sensing elements. The compressed reset values may also be output from the device without CDS subtraction having been performed. The light dependent values may also be compressed. CDS corrected output pixel values may also be compressed. | 04-28-2016 |
20160127666 | SOLID-STATE IMAGING ELEMENT HAVING IMAGE SIGNAL OVERFLOW PATH - Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows. | 05-05-2016 |
20160127668 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a sensor panel section and a readout circuit section. The sensor panel section is disposed on a glass substrate and has a photodetecting section including pixels arrayed in M rows and N columns, row selection lines, and readout lines. The readout circuit section is disposed on a substrate and has N integration circuits. Rectifier circuits are connected between nodes, between N panel-side connection points and the integration circuits, and a constant potential line. Circuit elements having resistance components are connected between the nodes and readout lines. | 05-05-2016 |
20160133664 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a first substrate and a second substrate electrically connected to the first substrate. The first substrate includes a first semiconductor layer and one or more first wiring layers. The second substrate includes a second semiconductor layer and one or more second wiring layers. The first photoelectric conversion element overlaps any of the one or more first wiring layers at all positions on the first photoelectric conversion element in a planar view of the first substrate. The second photoelectric conversion element does not overlap any of the one or more first wiring layers at some positions on the second photoelectric conversion element in the planar view of the first substrate. | 05-12-2016 |
20160134822 | IMAGE SENSOR AND METHOD FOR DRIVING SAME - The present invention provides an image sensor comprising: pixels arranged along a plurality of row lines and column lines in a matrix form; a scan driving unit for selecting the row lines in the unit of n lines in a binning mode; and a read circuit unit for outputting n*m binning signals generated by sampling n*1 signals output in every column line according to the selection of the row lines and averaging the sampled n*1 signals in the unit of m neighboring column lines, wherein each of n and m is a natural number larger than or equal to 2. | 05-12-2016 |
20160142657 | SYSTEM AND METHOD FOR USING FILTERING AND PIXEL CORRELATION TO INCREASE SENSITIVITY IN IMAGE SENSORS - An over sampled image sensor in which the pixel size is small enough to provide spatial oversampling of the minimum blur size of the sensor optics is disclosed. Image processing to detect targets below the typical limit of 6× the temporal noise floor is also disclosed. The apparatus is useful in detecting dimmer targets and targets at a longer range from the sensors. The inventions exploits signal processing, which allows spatial temporal filtering of the superpixel image in such manner that the Noise Equivalent Power is reduced by a means of Superpixel Filtering and Pooling, which increases the sensitivity far beyond a non-oversampled imager. Overall visual acuity is improved due to the ability to detect dimmer targets, provide better resolution of low intensity targets, and improvements in false alarm rejection. | 05-19-2016 |
20160150169 | IMAGE SENSOR PIXELS HAVING P-CHANNEL SOURCE FOLLOWER TRANSISTORS AND INCREASED PHOTODIODE CHARGE STORAGE CAPACITY - An image sensor may include image sensor pixels formed on a substrate. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. The pixel may include an n− type doped well region and a p-channel MOS source follower transistor formed within the n-well region. An n-channel MOS reset transistor may be coupled between the floating diffusion region and a bias voltage column line and may have a drain terminal that overlaps with the n-well region. If desired, the pixel may include a p-channel JFET source follower transistor formed within the floating diffusion region on the substrate and an n-channel MOSFET reset transistor coupled to the floating diffusion. The polarities of the doping in the substrate on which the pixels are formed may be reversed. The pixel may be formed without row select transistors to increase photodiode area and charge storage capacity. | 05-26-2016 |
20160150170 | CONTROL OF THE DURATION OF INTEGRATION IN A PHOTOSENSITIVE DEVICE - A control method for a photosensitive device comprises a matrix of photosensitive pixels distributed at the intersections of rows and columns of the matrix, each of the pixels comprising a photosensitive element able to generate an electrical signal under the effect of incident radiation and a switch controlled by a row conductor, the switch allowing the electrical signal to be transferred to a column conductor, the device further comprising a readout circuit connected to the column conductor to read out successively the various pixels connected to the column conductor, the method consisting, for each of the pixels, in activating the switch a first time by deactivating the associated readout circuit and in activating the switch a second time by activating the associated readout circuit, the duration separating the first activation and the second activation of the switch being equal to a predefined duration of integration. | 05-26-2016 |
20160150173 | METHOD AND SYSTEM FOR IMPLEMENTING CORRELATED MULTI-SAMPLING WITH IMPROVED ANALOG-TO-DIGITAL CONVERTER LINEARITY - A method of implementing Correlated Multi-Sampling (CMS) in an image sensor with improved analog-to-digital converter (ADC) linearity starts with an ADC circuitry included in a readout circuitry that generates a plurality of uncorrelated random numbers used as a plurality of ADC pedestals for sampling image data. A Successive Approximation Register (SAR) included in the ADC circuitry stores a different one of the ADC pedestals before each sampling of the image data. The ADC circuitry samples an image data from a row a plurality of times against plurality of ADC pedestals to obtain a plurality of sampled input data. The ADC circuitry converts each of the plurality of sampled input data from analog to digital, which includes performing a binary search using the SAR. Other embodiments are also described. | 05-26-2016 |
20160150174 | IMAGE SENSOR PIXELS HAVING BUILT-IN VARIABLE GAIN FEEDBACK AMPLIFIER CIRCUITRY - An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. An amplifying transistor may have a gate terminal coupled to the floating diffusion and a drain terminal coupled to an output node. The amplifying transistor may provide signal corresponding to transferred charge with a greater than unity voltage gain. A negative voltage feedback capacitor having variable capacitance may be coupled between the output node and the floating diffusion node thereby increasing the pixel dynamic range. A reset transistor may be coupled between the floating diffusion and output node. The amplifying transistor may include a p-channel transistor formed within a mini n-well region of the pixel or an n-channel transistor formed within a mini p-well region. The pixel may have increased storage capacity and dynamic range relative to conventional designs. | 05-26-2016 |
20160156861 | IMAGE SENSOR, IMAGE CAPTURING APPARATUS, AND CELLULAR PHONE | 06-02-2016 |
20160156862 | SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS | 06-02-2016 |
20160156863 | IMAGE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME | 06-02-2016 |
20160165160 | PIXEL READOUT ARCHITECTURE FOR FULL WELL CAPACITY EXTENSION - Certain aspects relate to systems and techniques for full well capacity extension. For example, a storage capacitor included in the pixel readout architecture can enable multiple charge dumps from a pixel in the analog domain, extending the full well capacity of the pixel. Further, multiple reads can be integrated in the digital domain using a memory, for example DRAM, in communication with the pixel readout architecture. This also can effectively multiply a small pixel's full well capacity. In some examples, multiple reads in the digital domain can be used to reduce, eliminate, or compensate for kTC noise in the pixel readout architecture. | 06-09-2016 |
20160165165 | FLOATING DIFFUSION RESET LEVEL BOOST IN PIXEL CELL - A reset level in a pixel cell is boosted by switching ON a reset transistor of the pixel cell to charge the floating diffusion to a first reset level during a reset operation. A select transistor is switched from OFF to ON during the floating diffusion reset operation to discharge an output terminal of an amplifier transistor. The reset transistor is switched OFF after the output terminal of the amplifier transistor has been discharged in response to the switching ON of the select transistor. The output terminal of the amplifier transistor charges to a static level after being discharged. The floating diffusion coupled to the input terminal of the amplifier transistor follows the output terminal of the amplifier transistor across an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor to boost the reset level of the floating diffusion. | 06-09-2016 |
20160172393 | CURVED IMAGE SENSOR, METHOD FOR FABRICATING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME | 06-16-2016 |
20160172399 | SOLID STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE | 06-16-2016 |
20160182842 | IMAGING DEVICE AND ELECTRONIC APPARATUS | 06-23-2016 |
20160182848 | IMAGE SENSOR FOR REDUCING CHANNEL VARIATION AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME | 06-23-2016 |
20160198106 | SOLID STATE IMAGE PICKUP DEVICE | 07-07-2016 |
20160198108 | Image sensor with multi-range readout | 07-07-2016 |
20160205333 | SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE | 07-14-2016 |
20160205334 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM | 07-14-2016 |
20160205335 | SOLID-STATE IMAGING DEVICE | 07-14-2016 |
20160255293 | RAMP-TYPE ANALOGUE-DIGITAL CONVERSION, WITH MULTIPLE CONVERSIONS OR SINGLE CONVERSION, DEPENDING ON THE LIGHT LEVEL RECEIVED BY A PIXEL | 09-01-2016 |
20160381311 | UNIVERSAL FOUR-SIDE BUTTABLE DIGITAL CMOS IMAGER - An imager including sub-imager pixel arrays having a plurality of four-side buttable imagers distributed on a substrate and an on-chip digitizing readout circuit. Pixel groupings formed from among the plurality of four-side buttable imagers. The readout electronics including a buffer amplifier for each of the pixel groupings and connected to respective outputs of each four-side buttable imager of the pixel grouping. A plurality of shared analog front ends, each shared analog front end connected to respective multiple buffer amplifiers from among the plurality of pixel groupings. An analog-to-digital converter located at a common centroid location relative to the plurality of shared analog front ends, the analog-to-digital converter having a fully addressable input selection to individually select an output from each of the plurality of shared analog front ends. An output of the analog-to-digital converter connected to a trace on a back surface of the wafer substrate by a through-substrate-via. | 12-29-2016 |
20160381312 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device and a camera system are provided. The solid-state imaging device capable of performing an intermittent operation includes a pixel unit and a pixel signal readout unit for reading out a pixel signal from the pixel unit in units of a plurality of pixels for each column. The pixel signal readout circuit includes a plurality of comparators and a plurality of counters whose operations are controlled by outputs of the comparators. Each of the comparators includes an initializing switch for determining an operating point for each column at a start of row operation, and is configured so that an initialization signal to be applied to the initializing switch is controlled independently in parallel only a basic unit of the initialization signal used for a horizontal intermittent operation, and the initializing switch is held in an off-state at a start of non-operating row. | 12-29-2016 |
20170237916 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE | 08-17-2017 |
20170237917 | SIGNAL PROCESSING DEVICE AND METHOD, IMAGING ELEMENT, AND ELECTRONIC DEVICE | 08-17-2017 |
20170237921 | SOLID-STATE IMAGING ELEMENT AND DRIVING METHOD THEREFOR, AND ELECTRONIC APPARATUS | 08-17-2017 |
20170237922 | IMAGE SENSOR AND METHOD FOR DRIVING UNIT PIXEL OF IMAGE SENSOR | 08-17-2017 |
20170237923 | SELECTIVELY ATTENUATING LIGHT ENTERING AN IMAGE SENSOR | 08-17-2017 |
20170237924 | SIGNAL PROCESSING DEVICE, IMAGE PICKUP ELEMENT, AND ELECTRONIC DEVICE | 08-17-2017 |
20170237925 | IMAGE SENSOR, IMAGE CAPTURING APPARATUS AND CELLULAR PHONE | 08-17-2017 |
20180027192 | IMAGE SENSOR, METHOD OF READING CONTROL, AND ELECTRONIC DEVICE | 01-25-2018 |
20180027201 | LENSLESS IMAGING SYSTEM USING AN IMAGE SENSOR WITH ONE OR MORE ATTENUATING LAYERS | 01-25-2018 |
20180027202 | IMAGE SENSING DEVICE AND CONTROL METHOD THEREOF | 01-25-2018 |
20190149759 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE | 05-16-2019 |
20220141411 | SOLID-STATE IMAGING DEVICE, ELECTRONIC DEVICE, AND CONTROL METHOD OF SOLID-STATE IMAGING DEVICE - To improve charge transfer efficiency in a solid-state imaging device that transfers a charge from a photoelectric conversion element to a floating diffusion layer. A solid-state imaging device is provided with a transfer transistor and a potential control unit. In this solid-state imaging device, the transfer transistor transfers a charge from a photoelectric conversion element to a floating diffusion layer in a predetermined transfer period according to a transfer signal transmitted through a predetermined transfer line. Furthermore, the potential control unit makes a potential in a transfer period of a predetermined signal line capacitively coupled with the floating diffusion layer higher than that outside the transfer period. | 05-05-2022 |