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Solid-state image sensor

Subclass of:

348 - Television

348207990 - CAMERA, SYSTEM AND DETAIL

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
348302000 X - Y architecture 723
348311000 Charge-coupled architecture 259
348300000 With amplifier 229
348296000 Electronic shuttering 76
348297000 Accumulation or integration time responsive to light or signal intensity 28
348295000 Time delay and integration mode (TDI) 9
Entries
DocumentTitleDate
20130044246IMAGING APPARATUS - An imaging apparatus with improved convenience, which can perform various types of processing using an imaging device while performing phase difference detection, is provided.02-21-2013
20130044245SOLID-STATE IMAGER DEVICE, DRIVE METHOD OF SOLID-STATE IMAGER DEVICE AND CAMERA APPARATUS - In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 02-21-2013
20090201399Image Sensor - An image sensor includes an imaging element for imaging an object, a movable member mounted with the imaging element and movably provided, a flexible printed circuit board having a portion on a side of a first end connected to the imaging element, and including a visually recognizable positioning member provided at least on a side of an upper surface and an extension/contraction region formed by folding the flexible printed circuit board with reference to the positioning member, and a circuit board connected with a portion on a side of a second end of the flexible printed circuit board and fixedly set.08-13-2009
20100020213IMAGER ROW-WISE NOISE CORRECTION - An imager having optically and electrically black reference pixels in each row of the imager's pixel array. Since the reference pixels of each row experience the same row-wise noise as active imaging pixels in the associated row, the signals from the reference pixels are used to cancel out row-wise noise from the row of imaging pixels. The reference pixels are designed such that their photosensors are physically or effectively removed from the row-wise noise correction, thus rendering them electrically black or dark. As such, the reference pixels can be used to provide row-wise noise correction without the adverse effects of warm and hot pixels.01-28-2010
20120169907FOCUS-FREE CAMERA MODULE - The present disclosure relates to a focus-free camera module minimized in height deviation of depth of focus, the focus-fixed focus-free camera module including: an image sensor; a PCB (Printed Circuit Board) mounted with the image sensor; a barrel mounted at an upper surface of the image sensor and accommodated with a lens therein; a holder attached to an upper surface of the PCB to accommodate the barrel; and adhesive means adhering an outer circumference of the barrel to an inner circumference of the holder, such that no height deviation in depth of focus is generated by adhesive structure in which a bottom distal end surface of the barrel is tightly adhered to an upper surface of an image sensor side without any separate medium.07-05-2012
20090262226IMAGE SENSOR PACKAGE AND CAMERA MODULE HAVING SAME - An image sensor package includes a first substrate, an image sensor chip, a processing chip and a plurality of passive elements. The first substrate has a supporting surface and a bottom surface opposite to the supporting surface. The image sensor chip is disposed on the supporting surface and electrically connected to the first substrate. The image sensor chip package further includes a second substrate. The processing chip and the passive elements are mounted on the second substrate and electrically connected to the second substrate. The bottom surface of the first substrate defines a cavity for receiving the second substrate, the processing chip and the passive elements therein.10-22-2009
20100079635OPTICAL ELEMENT WAFER MODULE, OPTICAL ELEMENT MODULE, METHOD FOR MANUFACTURING OPTICAL ELEMENT MODULE, ELECTRONIC ELEMENT WAFER MODULE, METHOD FOR MANUFACTURING ELECTRONIC ELEMENT MODULE, ELECTRONIC ELEMENT MODULE AND ELECTRONIC INFORMATION DEVICE - An optical element module according to the present invention includes a plurality of optical elements laminated therein, each optical element including: an optical surface at a center portion thereof; and a spacer section having a predetermined thickness on an outer circumference side of the optical surface, wherein an adhesive is positioned on a further outer circumference side of the spacer section, and the upper optical element and the lower optical element are adhered to each other such that an inside and an outside of the adhesive are ventable through a ventilating section of the adhesive.04-01-2010
20110194003SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND IMAGE PROCESSING DEVICE - An image processing device comprising: first A/D converters that receive output signals of respective columns of a plurality of pixels arranged in a matrix form, convert the output signals into first digital signals, and output the first digital signals; a second A/D converter that receives a correction signal, converts the correction signal into a second digital signal, and outputs the second digital signal; a first correction calculation unit that produces a first correction formula; a second correction calculation unit that produces a second correction formula based on the second digital signal; a determination unit that compares a coefficient of the second correction formula and a coefficient of a second correction formula produced before the second correction formula, and determines whether or not to produce the first correction formula based on the comparison result; and a signal output unit that outputs an update signal when it is determined to produce the first correction formula.08-11-2011
20110194001Image signal processing device, imaging device, image signal processing method and program - An image signal processing device includes: a color mixture correction circuit correcting color mixture among pixels arranged in the row and column directions, having plural light receiving units which perform photoelectric conversion and including filters dividing light incident on respective plural light receiving units into plural color components, wherein the color mixture correction circuit performs correction processing to a signal value of a target pixel of color mixture correction by associating respective signal values of neighboring pixels adjacent to the target pixel of color mixture correction with correction parameters unique to an address of each signal.08-11-2011
20090135283PIXEL ARRAY STRUCTURE FOR CMOS IMAGE SENSOR AND METHOD OF THE SAME - Provided is a pixel array structure and of a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of arranging the same in which unit pixels are arranged diagonally to adjacent unit pixels in a row and column direction. For the arrangement, a pixel array in even rows is shifted to a half of a pitch in a column direction with respect to a pixel array in odd rows.05-28-2009
20130083225SOLID-STATE IMAGE SENSOR AND CAMERA - An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.04-04-2013
20090122171Solid-state image sensor and image-capturing device - A solid-state image sensor includes: a plurality of image-capturing pixels, each equipped with a first micro-lens used to condense light; and a plurality of focus detection pixels engaged in focus detection, each equipped with a second micro-lens used to condense light; the plurality of image-capturing pixels and the plurality of focus detection pixels being disposed in a two-dimensional array. The first micro-lens and the second micro-lens are formed so that a light condensing position at which light is condensed via the second micro-lens is set further toward a micro-lens side than the light condensing position at which light is condensed via the first micro-lens.05-14-2009
20090122170IMAGING APPARATUS AND IMAGING METHOD - An imaging apparatus includes: a solid-state imaging device including a semiconductor substrate, a plurality of photoelectric conversion elements provided in the semiconductor substrate and a spectral element which is provided over the plurality of photoelectric conversion elements that are consecutive in a straight-line manner, in which a trapezoidal opening longitudinal in a direction from a bottom side into which light incident on the plurality of photoelectric conversion elements is introduced to a top side is provided, and which makes a spectral separation occur in the longitudinal direction by interference between the incident light and light reflected from an inner side surface of the trapezoidal opening; and a polarizing element which is provided on an optical path from a photographic subject to the solid-state imaging device and which allows polarized light to be transmitted therethrough.05-14-2009
20100118167METHODS AND APPARATUS PROVIDING SELECTIVE BINNING OF PIXEL CIRCUITS - A pixel circuit configured for optionally connecting the floating diffusion region of the pixel circuit to a floating diffusion region of another pixel circuit. Methods of using the pixel circuit include averaging or summing multiple photosensor outputs in the combined floating diffusion regions, varying the conversion gain of a pixel circuit floating diffusion region, and utilizing multiple readout circuits to readout charges transferred from a single photosensor to the combined floating diffusion regions. A method of window-of-interest averaging that utilizes the combined floating diffusion regions is also disclosed.05-13-2010
20090295952GAIN MATCHING FOR ELECTRON MULTIPLICATION IMAGER - A method and apparatus for equalizing gain in an array of electron multiplication (EM) pixels is disclosed, each pixel having one or more impact ionization gain stages with implants to achieve charge transfer directionality and comprising a phase 12-03-2009
20100073534Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device - An optical element according to the present invention includes: an optical surface at a center portion thereof; and a spacer section having a predetermined thickness on an outer circumference side of the optical surface, wherein a bottom portion for positioning an adhesive is provided on a further outer circumference side of the spacer section with a tapered portion interposed therebetween.03-25-2010
20100073533Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device - An optical element according to the present invention includes: an optical surface at a center portion thereof; a spacer section having a predetermined thickness on an outer circumference side of the optical surface; a support plate including one or a plurality of through holes penetrating the optical surface, inside a transparent resin material; and a penetrating portion and/or a concave portion for releasing the resin material when forming resin, in a further outer peripheral portion of the support plate.03-25-2010
20100073532Optical element, optical element wafer, optical element wafer module, optical element module, method for manufacturing optical element module, electronic element wafer module, method for manufacturing electronic element module, electronic element module and electronic information device - An optical element according to the present invention is provided, which comprises an optical surface at a center portion thereof; and a spacer section having a predetermined thickness on an outer circumference side of the optical surface, in which a surface height of the spacer section is configured to be higher than a surface height of the optical surface.03-25-2010
20100073531OPTICAL ELEMENT, OPTICAL ELEMENT WAFER, OPTICAL ELEMENT WAFER MODULE, OPTICAL ELEMENT MODULE, METHOD FOR MANUFACTURING OPTICAL ELEMENT MODULE, ELECTRONIC ELEMENT WAFER MODULE, METHOD FOR MANUFACTURING ELECTRONIC ELEMENT MODULE, ELECTRONIC ELEMENT MODULE AND ELECTRONIC INFORMATION DEVICE - An optical element according to the present invention includes: an optical surface at a center portion thereof; a spacer section having a predetermined thickness on an outer circumference side of the optical surface; a support plate including one or a plurality of through holes penetrating a portion corresponding to the optical surface, provided inside a transparent resin material, wherein the support plate has light shielding characteristics, an outer circumference portion side of the through hole of the support plate is provided inside the spacer section, and the outer circumference portion side of the through hole is configured to be thicker than a further outer circumference portion side thereof.03-25-2010
20100073530Method and Apparatus for Using Thin-Film Transistors and MIS Capacitors as Light-Sensing Elements in Charge Mapping Arrays - A method and apparatus for using TFT transistors or MIS capacitors as light-sensing elements in charge mapping arrays. A bias stress may be applied to a plurality of pixels in a charge map array. As a result, charge carriers may be trapped in each of the plurality of pixels responsive to the bias stress, which may be observed as a value shift such as a threshold voltage V03-25-2010
20130038767IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE - An imaging apparatus includes a solid-state imaging device and a driving unit. The solid-state imaging device has a plurality of pairs of first and second photoelectric conversion elements having different spectral sensitivity characteristics. The driving unit independently controls an exposure time of a first group of the plurality of first photoelectric conversion elements and an exposure time of a second group of the plurality of second photoelectric conversion elements. A wavelength range where the first photoelectric conversion element of each pair mainly has a spectral sensitivity and a wavelength range where the second photoelectric conversion element of each pair mainly has spectral sensitivity fall within the respective wavelength ranges of specific colors of visible light. A half width in the spectral sensitivity characteristic of each first photoelectric conversion element is wider than a half width in the spectral sensitivity characteristic of each second photoelectric conversion element of the pair.02-14-2013
20130038766APPARATUS AND METHOD FOR CAPTURING STILL IMAGES AND VIDEO USING CODED LENS IMAGING TECHNIQUES - An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array.02-14-2013
20130038765ZOOM LENS AND IMAGE PICKUP APPARATUS EQUIPPED WITH ZOOM LENS - A zoom lens includes a first lens unit of a positive refractive power, a second lens unit of a negative refractive power, a third lens unit of a positive refractive power, and a rear lens group including one or more lens units in order from an object side to an image side, the first, second, and third lens units being moved towards an object side during zooming from a wide-angle end to a telephoto end with respect to an image plane, wherein the first lens unit includes a positive lens and a negative lens, and movement amounts of the first, second, and third lens units during zooming from a wide-angle end to a telephoto end and a focal length of the entire zoom lens at the wide-angle end are appropriately set.02-14-2013
20130038764IMAGE PICKUP APPARATUS AND CAMERA MODULE - An image pickup apparatus includes an optical sensor including a light receiving unit, a sealing material configured to protect the optical sensor on a side of the light receiving unit, an intermediate layer formed at least between the light receiving unit and a first surface of the sealing material, the first surface being an opposed surface to the light receiving unit, and a control film configured to cause a cutoff wavelength to shift to a short wave side in accordance with an incident angle of light that is incident thereon obliquely, in which the control film includes a first control film formed on the first surface of the sealing material, the first surface being the opposed surface to the light receiving unit, and a second control film formed on a second surface of the sealing material, the second surface being opposite to the first surface.02-14-2013
20100045832MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS, SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC IMAGING APPARATUS - A manufacturing method of a solid-state imaging apparatus includes the steps of: preparing a solid-state imaging device having a light receiving region at a main surface thereof; preparing a light transmitting member having an extending portion extending from the solid-state imaging device; preparing a holding member having a space for holding the solid-state imaging device therein, and having a positioning portion for positioning the solid-state imaging device; fixing the light transmitting member to the main surface of the solid-state imaging device in parallel to each other to keep a constant interval therebetween; bringing a side of the solid-state imaging device to meet the positioning portion of the holding member; and fixing the extending portion of the light transmitting member to the holding member.02-25-2010
20100103296SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state imaging apparatus of the invention intends to provide a thin solid-state imaging apparatus having high rigidity, high reliability and an improvement in accuracy using a flexible wiring board, and is a solid-state imaging apparatus comprising a flexible wiring board, a reinforcing plate, a solid-state imaging element substrate, a translucent member, an optical lens and a lens cabinet, and the flexible substrate and the reinforcing plate have the same outer shape and are laminated and integrated, and a positioning hole for being commonly used from the front and the back as a reference in the case of placing the lens cabinet and the case of placing the solid-state imaging element substrate is formed in the reinforcing plate, and the translucent member is placed so as to close an opening part, and the solid-state imaging element substrate and the lens cabinet are oppositely placed in a state of sandwiching an opening part using the positioning hole as a common reference.04-29-2010
20100110246Image sensor and method of manufacturing the same - Provided is an image sensor. The image sensor according to example embodiments may include a substrate having an effective pixel region and an ineffective pixel region adjacent to the effective pixel region. The substrate may also have a shading pattern over the ineffective pixel region of the substrate. The shading pattern includes one or more openings to allow hydrogen ions to pass therethrough but prevent incident light from penetrating to the ineffective pixel region.05-06-2010
20130027593PHOTOELECTRIC CONVERSION DEVICE, IMAGING APPARATUS, AND SOLAR CELL - A photoelectric conversion device includes: a photoelectric conversion layer which includes a thioindigo derivative.01-31-2013
20130033629IMAGE SENSOR WITH IMPROVED BLACK LEVEL CALIBRATION - An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.02-07-2013
20130033628SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.02-07-2013
20100079642Optical element wafer and method for manufacturing optical element wafer, optical element, optical element module, electronic element wafer module, electronic element module, and electronic information device - A method for manufacturing an optical element wafer according to the present invention, in which a plurality of optical elements are arranged in two dimensions, includes: a replica forming step of forming a replica, in which an optical element shape is formed on a front surface side, in each of a plurality of recesses formed in a base; a stamper mold forming step of forming a stamper mold using the optical element shape of the replica; and an optical element wafer forming step of transferring the optical element shape to an optical element material using the stamper mold to form an optical element wafer.04-01-2010
20100157122COLOR INTERPOLATION - An imager has first and second photosensitive sites and an interpolator located in a semiconductor substrate. The first photosensitive site is configured to receive light having a spectral component, and the second photosensitive site is configured to measure the level of the spectral component in light received by the second photosensitive site. The interpolator is configured to estimate the level of the spectral component in the light received by the first photosensitive site based on the measurement by the second photosensitive site.06-24-2010
20120287316RAMP AND SUCCESSIVE APPROXIMATION REGISTER ANALOG TO DIGITAL CONVERSION METHODS, SYSTEMS AND APPARATUS - Successive approximation register (SAR) and ramp analog to digital conversion (ADC) methods, systems, and apparatus are disclosed. An analog voltage signal may be converted into a multiple bit digital value by generating bits of the multiple bit digital value by performing a SAR conversion on the analog voltage signal, where the bits corresponding to a SAR voltage level, and generating other bits of the multiple bit digital value by performing one or more ramp conversions on the analog voltage signal, the ramp conversion comparing the analog voltage signal to a ramp of voltage levels based on the SAR voltage level. The SAR and ramp ADC can provide multi-sampling using one SAR conversion and multiple ramp conversions. The SAR can set the voltage level of a first ramp of a multiple ramp conversion, which can then be used to preset the voltage level prior to subsequent ramps.11-15-2012
20130050550IMAGING APPARATUS - An imaging apparatus with improved convenience, which can perform various types of processing using an imaging device while performing phase difference detection, is provided.02-28-2013
20130070131SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS - A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.03-21-2013
20130070132Time of Flight Sensor with Subframe Compression and Method - A demodulation image sensor, such as used in time of flight (TOF) cameras, extracts all storage- and post-processing-related steps from the pixels to another array of storage and processing elements (proxels) on the chip. The pixel array has the task of photo-detection, first processing and intermediate storage to create subframes, while the array of storage and processing elements provides accumulation into frames. Particularly, sampled values of several subframes are summed in a compressed manner. Possible compression is to use exponential function.03-21-2013
20130070133SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND SIGNAL READING METHOD - Provided are a solid-state imaging device, an imaging device, and a signal reading method, which may reduce the degradation of signal quality, suppress an increase in a chip area, and suppress an increase in current consumption. The solid-state imaging device includes a plurality of pixels classified as first to n03-21-2013
20130050549EMBEDDED CAMERA WITH PRIVACY FILTER - An apparatus includes a housing having an integrated camera. A panel is positioned in front of at least a portion of the camera and is operable to selectively switch between at least a substantially transparent state and at least a substantially opaque state.02-28-2013
20130088623IMAGING APPARATUS AND METHOD OF CALCULATING WHITE BALANCE GAIN - A WB gain calculation unit 04-11-2013
20100002108Solid state imaging device, method for producing the same, and electronic apparatus - A solid state imaging device includes a photoelectric conversion portion in which the shape of potential is provided such that charge is mainly accumulated in a vertical direction.01-07-2010
20100002107SOLID-STATE IMAGE PICKUP APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state image pickup apparatus and a manufacturing method thereof are provided to prevent a burr from dropping off onto a light reception face that causes a black point deterioration of a video image and to improve in productivity. The solid-state image pickup apparatus according to the invention is a solid-state image pickup apparatus including a flat board for placing a solid-state image pickup device and a lens, wherein the flat board has a through opening and has a wiring section for placing the solid-state image pickup device on the opening face that a light reception face of the solid-state image pickup device faces and a step part for placing the lens in the opening end part on the opening face side of the through opening, and the solid-state image pickup device placed on the wiring section and the lens placed in the step part are integrally sealed with a resin.01-07-2010
20100134666IMAGE PROCESSING SYSTEM AND METHOD THEREOF - An image processing system includes a first image processing unit and a second image processing unit. The first image processing unit is utilized for receiving a plurality of images, and the first image processing unit divides a (K+N)06-03-2010
20130088622ZOOM LENS AND IMAGE PICKUP APPARATUS HAVING THE SAME - A zoom lens includes N lens units, in which a lens unit having a positive refractive power is disposed closest to an object side. Each lens unit is moved to effect zooming. An (N−1)th lens unit and an N-th lens unit, counted from the object side, have positive refractive powers. The (N−1)th lens unit includes a first lens subunit having a positive refractive power and a second lens subunit having a negative refractive power in order from the object side to an image side. The second lens subunit is moved to have a component in a direction perpendicular to an optical axis to move an image position. A focal length fN of the N-th lens unit, a back focus bkt at the telephoto end, and an amount of movement mN of the N-th lens unit during zooming from a wide-angle end to a telephoto end are appropriately set.04-11-2013
20090303361SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes: a pixel portion in which at least one pixel with a photo-electric conversion element is arranged; an analog/digital converter comprising: a delay circuit in which delay elements are connected in multiple stages, the delay elements having a delay amount in accordance with a difference between an output voltage that is output from the pixel portion for every pixel and a predetermined reference voltage; and a decoder portion that, after detecting a number of circulations, in the delay circuit, of a pulse propagating in the delay circuit and a number of stages, of the delay elements connected in multiple stages, through which the pulse has propagated, outputs a digital signal based on the detected number of circulations and stages for each of the pixels; and a control circuit which controls the analog/digital converter so as to modify a number of bits of the digital signal that is output from the analog/digital converter, in accordance with on a preset shooting mode, in which the control circuit modifies a period where the pulse propagates in the delay circuit.12-10-2009
20090303360IMAGE-SENSING MODULE FOR DIGITAL OPTICAL DEVICE - An image-sensing module. A base includes a plurality of sidewalls and an accommodation hole encompassed by the sidewalls. A flexible printed circuit board includes an installation portion and a through hole formed on the installation portion. A heat-dissipation board is fixed to a bottom surface of the installation portion of the flexible printed circuit board and is aligned with the through hole. An image sensor is fixed to a top surface of the installation portion of the flexible printed circuit board and is aligned with the through hole. The heat-dissipation board, flexible printed circuit board, and image sensor are accommodated in the accommodation hole of the base.12-10-2009
20130057737SOLID-STATE IMAGE PICKUP DEVICE - In a solid-state image pickup device, each pixel at a selected row outputs to a corresponding column signal line a first analog signal in accordance with an amount of electric charges at an electric charge accumulation section in an initial state and a second analog signal in accordance with an amount of photoelectric charges transferred to the electric charge accumulation section. An A/D converter provided at each column performs A/D conversion on the first and second analog signals to output first and second digital signals, respectively. Of first to third latch circuits provided at each column, the first latch circuit takes in and holds the first digital signal outputted from the A/D converter. The second latch circuit takes in and holds the first digital signal held at the first latch circuit. The third latch circuit takes in and holds the second digital signal outputted from the A/D converter.03-07-2013
20130057738SOLID-STATE IMAGING ELEMENT - According to one embodiment, a solid-state imaging element includes a substrate, and a plurality of color filters. A plurality of photoelectric conversion units is provided in the substrate. The plurality of color filters is provided respectively for the plurality of photoelectric conversion units. The plurality of color filters is configured to selectively transmit light of a designated wavelength band. Each of the plurality of color filters includes a stacked structure unit and a periodic structure unit. A plurality of layers having different refractive indexes is stacked in the stacked structure unit. A plurality of components is provided in the periodic structure unit at different periods according to the designated wavelength band and an incident angle of the light.03-07-2013
20090091647IMAGE SENSOR APPARATUS AND METHODS EMPLOYING UNIT PIXEL GROUPS WITH OVERLAPPING GREEN SPECTRAL CONTENT - An apparatus includes an array of color-selective sensors arranged as a plurality of repeating 2×2 unit pixel groups. Each sensor of a unit pixel group of the array is selective for a color including a green component. The unit pixel group includes respective sensors selective for respective first and second colors and two sensors selective for a third color. Signals from the sensors of the unit pixel groups may define a first color signal space, and the apparatus may further include an image processor circuit configured to receive image sensor signals from the array of color-selective sensors and to process the image sensor signals to generate image signals in a second color signal space.04-09-2009
20110069211ANALOG-TO-DIGITAL CONVERTER FOR CONTROLLING GAIN BY CHANGING A SYSTEM PARAMETER, IMAGE SENSOR INCLUDING THE ANALOG-TO-DIGITAL CONVERTER AND METHOD OF OPERATING THE ANALOG-TO-DIGITAL CONVERTER - Example embodiments are directed to an analog-to-digital converter (ADC) that controls a gain by changing a system parameter, an image sensor including the ADC and a method of operating the ADC. The ADC includes a sigma-delta modulator which receives an input signal and a clock signal and sigma-delta modulates the input signal into a digital output signal based on the clock signal and an accumulation unit which accumulates the digital output signal at each cycle of the clock signal according to an analog-to-digital conversion time and outputs an accumulation result. A system parameter is varied during the analog-to-digital conversion time to control a gain of the ADC. The method of operating the analog-to-digital converter includes sigma-delta modulating an input signal into a digital output signal in response to a clock signal input to the ADC; and accumulating the digital output signal at each cycle of the input clock signal according to an analog-to-digital conversion time and outputting an accumulation result.03-24-2011
20090295959SOLID-STATE IMAGE CAPTURING APPARATUS, DRIVING METHOD OF A SOLID-STATE IMAGE CAPTURING APPARATUS, AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing apparatus according to the present invention includes a pixel area in which pixels for generating a signal charge by a photoelectric conversion on an incident light are arranged in a two dimensional matrix; a row selection section for selecting each pixel row of the pixel area; a plurality of column signal lines, to which an analog pixel signal from each pixel of a pixel row selected by the row selection section is readout; and a signal processing circuit for generating a digital pixel value from the analog pixel signal of each pixel that is read out to each of the column signal lines, where the signal processing circuit includes at least two or more AD conversion circuits for simultaneously converting the analog pixel signal of each pixel of the selected pixel row into a digital pixel value.12-03-2009
20110013063IMAGING DEVICE AND IMAGING DEVICE MANUFACTURING METHOD - A technique capable of satisfying both higher functionality and higher accuracy in a compact imaging device is sought to be provided. In order to accomplish the above object, an imaging device is formed by lamination of a plurality of layers including: an imaging element layer that has an imaging element part; a lens layer that has a lens part whose distance from the imaging element part is changeable, and is disposed between a subject and the imaging element part; and an actuator layer that has an actuator part to move the lens part, and is disposed between the subject and the imaging element part.01-20-2011
20110013062SOLID-STATE IMAGING APPARATUS - In the solid-state imaging apparatus, the carrier holding portion is arranged at a position in a first direction from a photoelectric conversion portion, a floating diffusion region is arranged at a position in a second direction perpendicular to the first direction from the carrier holding portion with a transfer portion sandwiched between the floating diffusion region and the carrier holding portion, the carrier holding portion included in the first pixel is arranged between the photoelectric conversion portion included in the first pixel and the photoelectric conversion portion included in the second pixel, the carrier holding portion included in the first pixel is covered with a light shielding portion, and the light shielding portion extends over a part of each of the photoelectric conversion portions included in the first and second pixels.01-20-2011
20110013061IMAGE SENSING APPARATUS - An image sensing apparatus comprises an image sensing unit including an image sensor having a plurality of image sensing pixels and a plurality of focus detection pixels discretely arranged between the plurality of image sensing pixels, a shift detection unit that detects a shift amount between images obtained by a plurality of image sensing operations, a combining unit that combines signals of the focus detection pixels contained in the images obtained by the plurality of image sensing operations on the basis of the shift amount detected by the shift detection unit, and a focus adjustment unit that adjusts a focus of the imaging lens by using signals of the focus detection pixels before combined by the combining unit, and signals of the focus detection pixels that are combined by the combining unit.01-20-2011
20110013060APPARATUS FOR DETECTING FOCUS - An apparatus that detects an in-focus state has a plurality of line sensors and an image signal output processor. The plurality of line sensors is arranged on a projection area. The image signal output processor outputs image signals of an object on the basis of electric charges accumulated in the plurality of line sensors. Each line sensor is equipped with a plurality of pairs of photoelectric converters, which are arrayed along the longitudinal direction of the line sensor, and a plurality of image-pixel signal-reading circuits. Each image-pixel signal-reading circuit reads electric charges from a corresponding pair of photoelectric converters. Also, each image-pixel signal-reading circuit has a first circuit that reads electric charges accumulated in one photoelectric converter and a second circuit that reads electric charges accumulated in the other photoelectric converter. Each image-pixel signal-reading circuit is positioned between the corresponding pair of photoelectric converters and segments of the first and second circuits being shared.01-20-2011
20110013059IMAGE PICKUP UNIT - An image pickup unit having a lens barrel for an optical system includes an electrode which is formed on at least two of a one end portion of the lens barrel, the other end portion of the lens barrel, and a trunk portion of the lens barrel, a wire portion which connects the electrodes electrically, an image pickup element which is provided on one of the one end portion and the other end portion, a plurality of functional elements which is provided to the lens barrel, and a multiplexed-signal converting element which converts multiplexed signal from a plurality of external electrodes provided to the lens barrel. The wire portion transmits signals between the image pickup element and the plurality of functional elements, and the multiplexed-signal converting element.01-20-2011
20110013058ANALOG-TO-DIGITAL CONVERTER CIRCUIT AND SOLID-STATE IMAGING DEVICE - Certain embodiments provide an ADC includes a comparator, a binary counter and a control circuit. The comparator compares a first analog signal voltage with a first reference voltage, and compares a second analog signal voltage with a second reference voltage. The binary counter counts up the clock signal for a first period until the first reference voltage becomes equal to the first analog signal after the comparator starts to compare the first reference voltage with the first analog signal voltage, and inverts a logic level of the count output having a plurality of bits after the first period elapses. The binary counter counts up the clock signal for a second period until the second reference voltage becomes equal to a second analog signal after the comparator starts to compare the second reference voltage with the second analog signal voltage.01-20-2011
20110013057Output circuit for CCD solid-state imaging device, CCD solid-state imaging device, and imaging apparatus - An output circuit for a CCD solid-state imaging device, includes: a first source follower circuit that is supplied with an imaging signal acquired by a floating diffusion, and includes a driver MOS transistor and a load MOS transistor; and a last source follower circuit that is supplied with an imaging signal amplified by the first source follower circuit, and includes a driver MOS transistor and a load MOS transistor each being a P-channel MOS transistor to provide an output signal.01-20-2011
20090268067SOLID-STATE IMAGING DEVICE AND IMAGING METHOD - A determination unit 10-29-2009
20090268066SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD AND DRIVE METHOD THEREOF, AND CAMERA - A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.10-29-2009
20090268065CMOS LINEAR IMAGE SENSOR OPERATING BY CHARGE TRANSFER - The invention relates to image sensors in the form of a signal-integrating, travelling multi-line linear array for the synchronized readout of one and the same linear image successively by N lines of P photosensitive pixels and the pixel by pixel summation of the signals read out by the various lines. At the start of a photogenerated-charge integration time, the output voltage of a pixel of a previous line of rank i−1 is applied to the photodiode of the pixel of an intermediate line of rank i, the photodiode is isolated, the charges due to light are integrated therein and, finally, at the end of the integration time, the charges of the photodiode are transferred to a storage node of the pixel. A charge-voltage conversion circuit transforms the charges of the storage node into an output voltage of the pixel. Thus, before photogenerated charges are integrated in each pixel, a charge equivalent to an aggregate of charges originating from the previous pixel lines that have observed the same line of a scene is decanted into the photodiode.10-29-2009
20130063631SOLID-STATE IMAGING APPARATUS AND CAMERA - Disclosed herein is a solid-state imaging apparatus including a pixel cell separated by a device separation layer from a group of adjacent pixel cells by taking one pixel cell or a plurality of pixel cells as a unit wherein: the pixel cell has a first-conduction well, and a second-conduction well; the first-conduction well receives light and has an opto-electrical conversion function of carrying out an opto-electrical conversion process to convert the received light into electric charge as well as an electric-charge accumulation function for accumulating the electric charge; in the second-conduction well, a transistor is created to serve as a transistor used for detecting the electric charge accumulated in the first-conduction well and provided with a threshold modulation function.03-14-2013
20130063636SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.03-14-2013
20130063634LENS OPTICAL UNIT AND IMAGING DEVICE - Provided is a lens optical unit, including at least one lens arranged at an object side of a solid-state image sensor. An imaging plane of the image sensor has a non-planar shape causing a sag amount in an optical axis direction to increase as a distance from an optical axis increases, and satisfies the expression: ρ×Sag>0, where ρ represents a Petzval curvature of an optical unit represented by ρ:03-14-2013
20130063635SOLID-STATE IMAGE PICKUP ELEMENT, DRIVING METHOD THEREOF, AND CONTROL PROGRAM - A solid-state image pickup element comprises a plurality of first signal storage units connected to each vertical output line to store a signal transferred from a selected unit cell to each vertical output line, and a plurality of second signal storage units connected to each vertical output line to store the signals transferred from a first number of first signal storage units, wherein the plurality of first signal storage units and the plurality of second signal storage units are selectively driven such that in a period of time for selectively driving the first signal storage unit to store the signal transferred to the vertical output line by driving a signal read-out unit of the selected unit cell, another first signal storage unit connected to the vertical output line and the second signal storage unit to store the signal transferred from the another first signal storage unit are selectively driven.03-14-2013
20130063633SEMICONDUCTOR DEVICE - A semiconductor device includes a pair of sensor units each of which includes a photoelectric conversion unit, a signal holding unit and a transfer unit, and outputs a signal held by the signal holding unit, comprising a control unit including a detector unit, wherein when one of the pair of sensor units operates in a first mode, the other operates in a second mode, the detector unit detects that the output has reached a predetermined value after the one starting a signal transfer, the one ends the signal transfer in response to the detection and determines the held signal, the control unit generates a control signal after that, and the other in the second mode accumulates generated charges and starts a signal transfer in accordance with the control signal, then ends the signal transfer and determines the held signal.03-14-2013
20130063632FOCUS DETECTING APPARATUS AND DRIVING METHOD THEREFOR - A focus detecting apparatus, comprising a first pair of sensor blocks each including a sensor unit and a detection unit, and a power supply unit configured to supply power to the detection unit, wherein when one of the first pair of sensor blocks operates in a first mode, the other operates in a second mode, the detection unit of the sensor block operating in the first mode detects an output of the sensor unit, the sensor unit of the sensor block operating in the second mode accumulates charges and terminates the charge accumulation operation in response to the detection operation, and the power supply unit shuts off power supply to the detection unit of the sensor block operating in the second mode for at least part of the period of time during the operation in the second mode.03-14-2013
20090244337SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section where a plurality of pixels each containing a photoelectric conversion device are formed into an array; a retaining circuit for retaining one or the other of a reset signal and a light signal of the signals from the pixel; and an AD converter, the AD converter includes: a delay circuit having two input signal terminals to one of the input signal terminals of which the signal retained at the retaining circuit is inputted and to the other one of the input signal terminal of which the other signal not retained at the retaining circuit is inputted, said delay circuit having delay devices connected into a multiple of stages for giving to a running pulse a delay amount corresponding to the extent of a difference between the signals inputted to said one and the other input signal terminals; and an encoder for sampling and encoding a running position of the pulse at every predetermined timing to generate a digital value corresponding to the difference between the input signals.10-01-2009
20090237537DIGITAL CAMERA - In order to provide a digital camera which includes a heat dissipating device which can cool sufficiently a solid state image pick-up device and integrated circuits, which has a high rigidity and which affects little the design of the digital camera, there is provided a digital camera comprising a lens unit 09-24-2009
20090237536ANALOG-TO-DIGITAL CONVERSION IN IMAGE SENSORS - An image sensor has a per-column ADC arrangement including first and second capacitors for correlated double sampling, and a comparator circuit. The capacitors are continuously connected to, respectively, the analog pixel signal and a ramp signal without use of a hold operation. The comparator circuit comprises a differential amplifier having one input connected to the junction of the two capacitors and another input connected to a reference signal. The reference signal is preferably sampled and held from a reference voltage. The use of a differential amplifier as first stage of the comparator addresses problems arising from ground voltage bounce when a large pixel array images a scene with low contrast.09-24-2009
20090237535ANALOG-TO-DIGITAL CONVERTER, ANALOG-TO-DIGITAL CONVERTING METHOD, SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA SYSTEM - An analog-to-digital converter that converts an analog input signal into a digital signal includes a comparator configured to compare a reference signal with an input signal and, if the input signal matches the reference signal, inverts an output; a counter configured to count a comparison time of the comparator; a control circuit configured to monitor the output of the comparator; a voltage generating circuit configured to generate, if a monitoring result obtained by the control circuit indicates that the output of the comparator is at a predetermined level, a direct current voltage in accordance with the monitoring result; and an analog adder configured to add the voltage generated by the voltage generating circuit to the input signal and supply a sum signal to an input terminal of the comparator.09-24-2009
20090009639Solid-state image capturing device, manufacturing method for solid-state image capturing device, solid-state image capturing apparatus, and electronic information device - A solid-state image capturing device is provided, and in a pixel section in the center of a chip where a plurality of light receiving elements are arranged in two dimensions, an on-chip lens for focusing incident light is provided on each of the plurality of light receiving elements in a corresponding manner; and a dummy pattern made of a material for the on-chip lens is provided on a peripheral circuit section on an outer circumference side of the chip in order to improve the heat-resisting property at the time of reflow soldering.01-08-2009
20090009638IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.01-08-2009
20100085453APPARATUS FOR OPTICALLY COMBINING VISIBLE IMAGES WITH FAR-INFRARED IMAGES - An image sensing apparatus, particularly, an apparatus for optically combining visible images with far-infrared images is provided in which performing a separate signal processing may not be needed. The image combining apparatus emits light that is sensed by an image sensor, and reflects the light toward the image sensor in response to far-infrared rays being sensed from an object, thereby converting far-infrared information into information that can be sensed by the image sensor.04-08-2010
20100085454IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE - An imaging apparatus includes a control unit of performing a series of drive operations of discharging electric charges in photoelectric conversion portions of all pixel units to a semiconductor substrate, simultaneously starting an exposure in all the pixel units, injecting the electric charges generated in the photoelectric conversion portions during the exposure period into floating gates FG during the exposure period, reading first signals corresponding to the electric charges accumulated in the FG after the end of the exposure period, discharging the electric charges in the FG to writing drains and reading drains, and reading second signals corresponding to noises accumulated in the FG, at different times by lines and a CDS generating an image capturing signal for generating image data by subtracting the second signals from the first signals.04-08-2010
20130162873IMAGING APPARATUS - An imaging apparatus includes an image data interface unit that outputs first image data according to a pixel signal input from a solid-state imaging device, an image data reading unit that reads image data from a storage unit and outputs the read image data as second image data, an image synthesis unit that outputs third image data obtained by synthesizing the first image data with second image data, an evaluation value generation unit that generates an evaluation value based on image data, a first image data selection unit that inputs selected image data to the evaluation value generation unit, an image data writing unit that stores image data in the storage unit, a second image data selection unit that inputs selected image data to the image data writing unit, and a display unit that displays an image according to the third read image data read from the storage unit.06-27-2013
20110025892IMAGE SENSOR PIXEL STRUCTURE EMPLOYING A SHARED FLOATING DIFFUSION - A pixel structure for an image sensor includes a semiconductor material portion having a coplanar and contiguous semiconductor surface and including four photodiodes, four channel regions, and a common floating diffusion region. Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants as defined employing a vertical line passing through a point within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor, a source follower transistor, and a row select transistor are located within four different quadrants as defined employing a vertical line passing through a point within one of the photodiodes as an axis.02-03-2011
20090244340IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.10-01-2009
20090009640IMAGE PICKUP APPARATUS AND MONITORING DEVICE AND METHOD - Detection and notification of states where degradation of the image quality occurs due to heat are certainly performed. A temperature detection portion detects the temperature around a logarithmic transformation type image pickup device and supplies a signal indicative of the detected temperature to a notification portion A permissible-temperature setting portion sets a permissible temperature which is a temperature around the logarithmic transformation type image pickup device which allows keeping the degree of degradation of the image quality within a range permitted by an image processing device, on the basis of the illuminance of an object which was detected by an object illuminance detection portion and, then, supplies information indicative of the set permissible temperature to the notification portion. The notification portion outputs an error signal to the image processing device, if the temperature around the logarithmic transformation type image pickup device has exceeded the permissible temperature. The present invention is applicable to an image pickup apparatus having a logarithmic transformation type image pickup device.01-08-2009
20110032400IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME - An image sensor module includes a semiconductor chip, a transparent substrate, and metal lines. The semiconductor chip includes image sensors disposed in an image sensor region, pads electrically connected to the image sensors and disposed in a peripheral region defined along a periphery of the image sensor region, and through-electrodes electrically connected to the pads. The transparent substrate has a groove defined by a surface covering the image sensors and the pads of the semiconductor chip. The metal lines are disposed on a lower surface of the semiconductor chip and are electrically connected to the through-electrodes.02-10-2011
20110109778IMAGING DEVICE AND IMAGING CONTROL METHOD - An imaging device includes an optical imaging system, a solid-state image sensor which converts an optical image of a subject formed by the optical imaging system into an electric image signal, an exposure controller which starts an exposure in response to an instruction to start shooting, an image reader which sequentially read image signals from the solid-state image sensor while the exposure controller continues the exposure, an image processor which sequentially processes the image signals read by the image reader, a display unit which displays image data output from the image processor; and an image display processor which allows the display unit to sequentially display image data processed by the image processor with a predetermined time interval.05-12-2011
20100118170SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.05-13-2010
20110085064SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device and a camera system are provided that are capable of preventing the occurrence of invalid frames if a shutter and a gain are simultaneously set. The solid-state imaging device has a picture element array block 04-14-2011
20120013778METHOD OF DRIVING SOLID-STATE IMAGING APPARATUS - When a horizontal skipping operation is performed in a solid-state imaging apparatus that includes an A/D converting circuit in each column and that applies an arithmetic operation process to a digitalized signal and an arithmetic operation is performed with signals held by a plurality of register circuits, A/D converters and register circuits in columns in which signals are skipped, or not read out, are not involved in the operations. A more consideration is needed in terms of the use efficiency of circuits. A unit for connecting a register circuit of a certain column and a register circuit of a different column is arranged.01-19-2012
20120293698SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM - The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip 11-22-2012
20120293697Image Sensor and Control Method for Image Sensor - An image sensor including a plurality of first sensing pixels, a plurality of second sensing pixels, and a readout circuit is disclosed. The first sensing pixels are disposed within a sensitive region. The second sensing pixels are disposed within a non-sensitive region. The readout circuit repeatedly reads the output signals of the second sensing pixels to obtain an offset. The readout circuit processes the output signals of the first sensing pixels according to the offset.11-22-2012
20100171854Solid-state imaging device - A solid-state imaging device includes: a light-receiving element making a photoelectric conversion and being disposed in each of a plurality of pixels, wherein a honeycomb structure in which a predetermined pixel is surrounded with six pixels neighboring the predetermined pixel out of the plurality of pixels or a structure in which one to three pixels out of the six neighboring pixels are omitted from the honeycomb structure is used as a basic unit.07-08-2010
20100171853Solid-state imaging device, signal processing method of solid-state imaging device, and image capturing apparatus - A solid-state imaging device includes: a plurality of pixel circuits each including a photoelectric conversion element; reading signal lines connected to the pixel circuits; a reference signal output circuit outputting a reference signal whose voltage level varies; a reference signal line connected to the reference signal output circuit; and comparators each having a first input terminal and a second input terminal and each inverting its output depending on a voltage relation of the first input terminal and the second input terminal, wherein the first input terminals of some of the comparators are connected to the reading signal lines and the second input terminals thereof are connected to the reference signal line, and wherein the first input terminals of the other of the comparators are connected to the reference signal line and the second input terminals thereof are connected to the reading signal lines.07-08-2010
20100007778Dynamic range extending method and apparatus using subsampling - A method and apparatus subsampling a plurality of signals from one frame of a pixel array, pixels within the pixel array belonging to one of at least two sets, each set configured to sense values of a same image parameter, includes controlling integration times for first and second signals for each set output from the pixel array, controlling including using a first integration time for the first signal of the set and using a second integration time, different than the first integration time, for the second signal of the set, and calculating a synthesized value for each set using the first and second signals having different integration times.01-14-2010
20110279717SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.11-17-2011
20090207288SIGNAL READOUT METHOD OF SOLID-STATE IMAGING DEVICE AND IMAGE SIGNAL PROCESSING METHOD - The present invention provides a signal readout method of solid-state imaging device which can simultaneously readouts the signals having different properties that can generate multiple images obtained by capturing the same subject under different capturing conditions from one solid-state imaging device.08-20-2009
20120188424COMMON ELEMENT PIXEL ARCHITECTURE (CEPA) FOR FAST SPEED READOUT - The present invention relates to a common element pixel architecture (CEPA) imager. The CEPA includes a first column of pixels and a second column of pixels. The CEPA also includes a first column line and a second column line. A first group of pixels is arranged including pixels from the first column and the second column coupled to the first column line. A second group of pixels is arranged including other pixels from the first column and the second column coupled to the second column line.07-26-2012
20100053394Solid-state image pickup apparatus and electronic device comprising the same - A solid-state image pickup apparatus 03-04-2010
20120105693ZOOM LENS AND PHOTOGRAPHING APPARATUS - A zoom lens according to the invention includes in order starting from an object side a first lens group having a positive refractive power; a second lens group having a negative refractive power and selectively moveable along an optical axis for zooming; an aperture stop; a third lens group having a positive refractive power and including a third-A lens group including a doublet lens including a positive lens and a negative lens and having at least one aspherical surface, selectively moveable along the optical axis for image blur compensation, and having a positive refractive power, and a third-B lens group including a positive lens and a negative lens; and a fourth lens group having a positive refractive power and selectively moveable along the optical axis to compensate for a variation in an image plane caused by the zooming and to perform focusing.05-03-2012
20120099010SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device 04-26-2012
20120099009OPTICAL LENS ASSEMBLY - This invention provides an optical lens assembly comprising, in order from an object side to an image side: a first lens element with positive refractive power; a second lens element with positive refractive power; a third lens element with negative refractive power having a concave object-side surface and a convex image-side surface, at least one of the object-side and image-side surfaces thereof being aspheric; and a fourth lens element with positive refractive power having an aspheric object-side surface and an aspheric image-side surface; wherein the number of lens elements with refractive power is four.04-26-2012
20110285885IMAGING SYSTEM FOR CREATING AN IMAGE OF AN OBJECT - An imaging system provides a serial video signal that is indicative of the intensity of the light. The imaging system has an array of pixel image sensors arranged in rows and columns. A control circuit is in communication with the rows of the array and the plurality of column switches. The control circuit generates reset control signals, transfer gating signals, pixel image sensor initiation signals for each selected row for controlling resetting, integration of photoelectrons generated from the light impinging upon the array of pixel image sensors, charge transfer of the photoelectrons from the photosensing devices to the charge storage device, and to activate the photoelectron sensing devices on each row to generate output signals from each of the pixel image sensors on a selected row. The control circuit generates the column selection signals for transfer of the output signals from selected rows to form a serial video output signal.11-24-2011
20110285883SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied:11-24-2011
20090046183Solid state imaging device and manufacturing method thereof - A plurality of sensor packages (02-19-2009
20110292261ANALOG-TO-DIGITAL CONVERTER AND DEVICES INCLUDING THE SAME - An analog-to-digital converter including a comparator configured to compare a pixel signal received at a first input terminal of the comparator with a ramp signal received at a second input terminal of the comparator and generate a comparison signal as a result of the comparison; and a ramp signal supply circuit configured to provide the ramp signal to the comparator, wherein the ramp signal supply circuit generates a first signal as part of the ramp signal in response to the comparison signal and a first clock signal being received at the ramp signal supply circuit, wherein a slope of the first signal sequentially changes until the comparison signal makes a transition from one logic level to another and, after the transition, the ramp signal supply circuit generates a second signal as part of the ramp signal, wherein a slope of the second signal sequentially changes, wherein the slope of the second signal is opposite the slope of the first signal.12-01-2011
20110292260DATA SELECTION CIRCUIT, DATA TRANSMISSION CIRCUIT, RAMP WAVE GENERATION CIRCUIT, AND SOLID-STATE IMAGING DEVICE - Provided are a data selection circuit, a data transmission circuit, a ramp wave generation circuit, and a solid-state imaging device. A delay section delays signals input to delay units of n (n is a natural number equal to or more than 3) stages that are connected to each other and have the same configuration and outputs delayed signals from the delay units. A delay control section controls a delay amount of the delay units. An output section performs a logical operation on signals output from i-th and j-th (i and j are natural numbers that are different from each other and equal to or more than 1 and equal to or less than n) delay units to generate a signal and outputs the signal to a k-th (k is a natural number equal to or more than 1 and equal to or less than m) first data selection pulse input terminal of a functional circuit having m (m is a natural number equal to or more than 2) first data selection pulse input terminals.12-01-2011
20110285884Circuit for Processing a Time-discrete Analog Signal and Image Sensor - A circuit for processing an analog signal having a time sequence of discrete signal levels, each of which lies in a time interval and represents an information-bearing segment of the interval while the rest of the time interval is a non-information-bearing segment, comprises a transistor in emitter-follower or source-follower configuration, a high emitter or source resistance or, instead, a high-ohm constant current source, and a device for applying a voltage supply, as well as a switch which is connected between the emitter and a reference potential to prevent a current from flowing via the high-ohm resistance or the high-ohm voltage source for charge reversal of an output capacitance of the circuit in one direction, whereas for charge reversal in the other direction the dynamic current boosting effect of the transistor is exploited. This results in a fast emitter-follower or source-follower circuit which is particularly suitable as the output stage for image sensors.11-24-2011
20110141327IMAGE CAPTURING SYSTEM - The present invention discloses an image capturing system comprising a printed circuit board and an image capturing module. The image capturing module comprises a processing device, an image capturing device, a lens and a housing. The processing device is disposed above the printed circuit board and electronically connected with the printed circuit board. The image capturing device is disposed above the processing device and electronically connected with the processing device. The lens is disposed above the image capturing device, and the housing is disposed on the printed circuit board and encloses the processing device, the image capturing device and the lens.06-16-2011
20130215301IMAGE CAPTURING LENS ASSEMBLY - An image capturing lens assembly includes, in order from an object side to an image side: the first lens element with positive refractive power, the second lens element with refractive power, the third lens element with positive refractive power, the fourth lens element with refractive power, the fifth lens element with refractive power, and the sixth lens element with refractive power, at least one surface of the sixth lens element thereof being aspheric and having at least one inflection point. By such arrangement, total track length and the photosensitivity of the image capturing lens assembly can also be effectively reduced while retaining high image quality.08-22-2013
20110169988SOLID-STATE IMAGING DEVICE - In a solid-state imaging device, each of a plurality of switches is connected between a pulse output terminal of each delay unit and a pulse input terminal of the next-stage delay unit. Each of a plurality of switches is connected between the pulse output terminal and the pulse input terminal of each delay unit. A plurality of switches is turned on and a plurality of switches is turned off in conjunction with an oscillation operation, and a plurality of switches is turned off and a plurality of switches is turned on in conjunction with a holding operation.07-14-2011
20090002532SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND CAMERA MODULE - An optical filter layer composed of an infrared cut filter layer, an optical low pass filter layer and the like is formed on a glass substrate. The optical filter layer is made either by attaching or depositing. The glass substrate with the optical filter layer is attached to a semiconductor wafer, in which imaging sections are arranged in a matrix. The glass substrate and the semiconductor wafer are diced along each imaging section to separate individual solid state imaging device.01-01-2009
20100265371Image Sensor Circuit - An image sensor circuit comprises at least one pixel cell for providing an output signal which is variable according to illumination of said pixel cell between a maximum and a minimum level, an analogue-to-digital converter for converting output signals from said pixel cell into digital data, and an offset signal source for providing an offset signal having a level between said maximum and minimum levels. The analogue-to-digital converter is fully differential and is connected to said pixel cell and to said offset signal source.10-21-2010
20100091149ESD INDUCED ARTIFACT REDUCTION DESIGN FOR A THIN FILM TRANSISTOR IMAGE SENSOR ARRAY - A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a photo-sensitive cell; and forming a dielectric interlayer over the pixel. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. After the first conductive layer is formed, the image sensor array is well protected from ESD events because the first conductive layer spreads out any charge induced by tribo-electric charging events that may occur during subsequent fabrication processing steps, thereby reducing the potential for localized damage to the switching transistors upon the occurrence of ESD events.04-15-2010
20100091151SOLID-STATE IMAGE PICKUP DEVICE AND SIGNAL PROCESSING SYSTEM - A solid-state image pickup device includes a pixel unit configured to convert light into an electrical signal; a substrate having a first side on which the pixel unit is formed and a second side opposite the first side; an optical communication unit disposed on the first side of the substrate, and configured to convert a signal read out from the pixel unit into an optical signal and output the optical signal; and a cooling unit disposed on the second side of the substrate and below at least a forming area of the optical communication unit, the forming area being an area where the optical communication unit is formed, and configured to cool or dissipate heat generated in the optical communication unit and transferred through the substrate.04-15-2010
20100091152SOLID-STATE IMAGING DEVICE AND SIGNAL PROCESSING SYSTEM - A solid-state imaging device includes: a pixel portion configured to convert light into an electric signal; a substrate where the pixel portion is formed; an optical communication unit configured to convert a signal read out from the pixel portion into an optical signal, and outputs the optical signal, which is disposed in one surface where the pixel portion is formed of the substrate; and a light shielding portion configured to shield, of signal light to be output from the optical communication unit, light that directs to the pixel portion, and light to be leaked from the optical communication unit, which is disposed around the optical communication unit.04-15-2010
20100091153SOLID-STATE IMAGE PICKUP DEVICE, OPTICAL APPARATUS, SIGNAL PROCESSING APPARATUS, AND SIGNAL PROCESSING SYSTEM - A solid-state image pickup device includes a pixel unit configured to convert light into an electrical signal, an A/D converter configured to convert a signal read from the pixel unit into a digital signal, a light modulation unit configured to modulate an externally input light beam using the signal digitized by the A/D converter and output a signal light beam based on the signal read from the pixel unit, a timing generation unit configured to generate a synchronization signal used for synchronizing input and output of signals of the pixel unit, the A/D converter, and the light modulation unit, and a controller configured to control readout of the signal.04-15-2010
20100091154Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an image sensing device and a via plug. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The image sensing device is disposed over the interconnection. The via plug is formed at a pixel boundary and electrically connects the image sensing device and the interconnection.04-15-2010
20100091155Image Sensor and Method for Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, an interconnection, an insulating layer, an electrode, and an image sensing device. The readout circuitry is disposed in a first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The insulating layer is disposed over the interconnection. The electrode is disposed on the insulating layer. The image sensing device is disposed on the electrode. The electrode and the interconnection provide a capacitive coupling of the image sensing device to the readout circuitry so that a contact formation process to contact the photodiode to the interconnection can be omitted.04-15-2010
20100091156SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.04-15-2010
20100079631Very Small Pixel Pitch Focal Plane Array And Method For Manufacturng Thereof - A method for manufacturing an imaging device is provided. The method comprises forming a contact pad over a semiconductor substrate. The contact pad has a malleable metal. The method further comprises providing a readout circuit having a first side and a contact plug. The contact plug has a base affixed to the first side of the readout circuit and a plurality of prongs extending from the base away from the first side. The first side of the readout circuit is moved towards the substrate so that the prongs of the contact plug are pressed into the pad and displace a portion of the pad into a space defined by and between a first and a second of the prongs. Stop elements formed over the substrate are aligned with and contact stop elements provided on the readout circuit so that the prongs are inhibited from passing completely through the contact pad.04-01-2010
20100079632Correlated double sampling pixel - A correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a sensor circuit to generate a voltage value corresponding to electromagnetic radiation received on a photodetector included therein, and a sample and hold (S/H) stage including a sample switching-element and first and second capacitor-elements. The first capacitor-element is coupled between an output of the sensor circuit through the sample switching-element and a predetermined reference potential. The second capacitor-element has a first node coupled to the output of the sensor circuit through the sample switching-element and a second node coupled in series with an output of the S/H stage, the second node of the second capacitor-element further coupled through a calibration switching-element to a calibration voltage to sample a reset voltage value on the photodetector at a first time at a beginning of an integration period following reset of the sensor circuit.04-01-2010
20100033608Camera module and method of manufacturing the same - Provided is a camera module including a housing that includes one or more lenses which are sequentially fixed and coupled and of which the focus does not need to be adjusted; an image sensor module that is coupled to a lower end portion of the housing; and a main substrate that is coupled to a lower end portion of the image sensor module through a reflow process. The image sensor module includes a module substrate including: a cylindrical upper cavity which is formed inside an upper end portion of the module substrate; a cylindrical lower cavity which is formed inside a lower end portion of the module substrate; and a filter mounting portion which is formed in such a manner that an IR filter seals the upper cavity; and a housing mounting portion which is formed in an upper end portion of the module substrate such that fine focus adjustment can be performed in a sliding manner when the image sensor module is coupled to the lower end portion of the housing; the IR filter which is mounted on the filter mounting portion formed in the module substrate; an image sensor which is fixed in the upper cavity, formed in the module substrate, through wire bonding; and a pad which is formed on a lower end portion of the module substrate and serves as a bonding medium during a reflow process.02-11-2010
20110216233METHOD, APPARATUS, AND SYSTEM PROVIDING AN IMAGER WITH PIXELS HAVING EXTENDED DYNAMIC RANGE - The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.09-08-2011
20110216232METHOD FOR ACCESSING A PIXEL AND A DEVICE HAVING PIXEL ACCESS CAPABILITIES - A method for writing to a pixel, the method includes: activating an input transistor and a second transistor; wherein the second transistor is coupled to a second node and the input transistor is coupled between the second node and a photo-detector; inactivating the second transistor; compensating for second node voltage change resulting from the inactivating of the second transistor by providing a feedback signal to a pixel node that is capacitively coupled to the second node via at least one pixel capacitance; repeating, until a control criterion is fulfilled, the stages of: inactivating the input transistor, and measuring a pixel output signal; and operating the input transistor in a weakly conductive mode and providing to the pixel a feedback signal that is responsive to a result of the measurement of the pixel output signal.09-08-2011
20090195679SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device including a driver-control unit configured to control the operation timing of a pulse-driven actuator driver based on the read timing of the sensor of a solid-state image pickup element is provided.08-06-2009
20090190011Image sensor having high speed operation - An image sensor includes a data formatter and a transformer. The data formatter divides N-bit data into K-bit units with N and K being natural numbers and with K07-30-2009
20120188425IMAGING DEVICE AND IMAGING APPARATUS - An imaging device includes: an image generation pixel including a light receiving element generating a signal for generating an image; a phase-difference detection pixel including a light receiving element generating a signal for performing in-focus determination by phase difference detection; and a holding section holding the signal generated by the light receiving element in the image generation pixel and disposed in an area where subject light is shielded by a light shielding layer in the phase-difference detection pixel.07-26-2012
20100002112CMOS IMAGE SENSOR WITH NOISE CANCELLATION - An image sensor having one or more pixels within a pixel array. A vertical signal line across the pixel array conductively connects to a drain terminal of a transistor of one of the pixels. The drain terminal is driven to a first drain voltage via the vertical signal line so that the transistor enters a triode region. A gate of the transistor is placed into a tri-state during the triode region, the gate being at a first gate voltage prior to the tri-state. The drain terminal is driven to a second drain voltage during the tri-state, whereby the gate is capacitively coupled to a second gate voltage. The second drain voltage may be higher than the first drain voltage so as to effectuate a gate voltage boosting for the transistor. The transistor may be a reset transistor having a drain terminal conductively coupled to reset said photodetector.01-07-2010
20090153709DIGITAL CAMERA - A digital camera has an image-capturing device, an image processor, and a display. The image-capturing device creates a cleaning image which is used for pinpointing dust particles attached to an image sensor. The image processor creates an inverted cleaning image so that the top and bottom of a subject image provided on the image sensor match the top and bottom of a subject image included in the cleaning image. The display displays the inverted cleaning image.06-18-2009
20090153708SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.06-18-2009
20090153707Solid-state image pickup device and electronic device comprising the same - A camera module 06-18-2009
20090147115Solid-state image pick-up device, method for producing the same, and electronics device with the same - In accordance with the present invention of the solid-state image pickup device 06-11-2009
20090147113SYSTEM FOR PROGRAMMING A PLURALITY OF CHIPS, SUCH AS PHOTOSENSOR CHIPS OR INK-JET CHIPS, WITH OPERATING PARAMETERS - An imaging system, such as for recording images as digital data, comprises a plurality of imaging chips. Each chip includes a plurality of imaging elements; a data-in input, the data-in input accepting control data of a first type and control data of a second type, the control data of each type having an effect on at least one operational aspect of the imaging elements; and a selection input, the selection input selectably causing the imaging chip to ignore control data in the data-in input. A data-in line is common to the data-in input of all imaging chips. By controlling the selection input to all chips, the chips can be loaded with control signals in parallel, or in serial, with control data specifically intended for each chip.06-11-2009
20100201855SOLID-STATE IMAGING DEVICE, CAMERA, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.08-12-2010
20100201854SOLID-STATE IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF, IMAGE-PICKUP APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR SUBSTRATE - A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer.08-12-2010
20090147117PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device includes a pixel array in which a plurality of pixels including a photoelectric conversion unit are arrayed, a first storage unit and second storage unit which store pixel signals read out from the pixel array, a first read switch which reads out the pixel signal stored in the first storage unit to a first common signal line, a second read switch which reads out the pixel signal stored in the second storage unit to a second common signal line, and a third read switch which has an input terminal electrically connected to the output terminal of the second storage unit, and an output terminal electrically connected to the output terminal of the first read switch, and reads out the pixel signal stored in the second storage unit to the first common signal line.06-11-2009
20090147116IMAGE-CAPTURING APPARATUS, CAMERA, VEHICLE, AND IMAGE-CAPTURING METHOD - The image-capturing apparatus according to the present invention is an image-capturing apparatus including a solid-state imaging device which generates a first image by image-capturing a subject using a first exposure time, a predicted-flare generating unit which generates a predicted-flare image showing a flare component included in the first image, a subtracting unit which generates a difference image by subtracting the predicted-flare image from the first image, and an amplifying unit which generates an amplified image by amplifying the difference image.06-11-2009
20090147114Circuits and Methods for Image Signal Sampling - This invention discloses a type of image signal sampling circuits and methods. The circuit includes: a signal acquisition unit, a column read out unit, and a working module control circuit. The control circuit includes: a control unit, a source column switch group, a ground column switch group, and a between-column switch group. Each sampling column circuit is equipped with a source column switch and a ground column switch. The source column switch is connected between the inputs of the signal source and the signal acquisition unit. The ground column switch is connected between the ground and the bottom of the signal acquisition unit. The input of the column read out unit is connected to the input of the signal acquisition unit and the output is used to send out the sampled signal. A between-column switch is installed between the input of a front column signal acquisition unit and the bottom of a back signal acquisition unit. The control unit is used to control the switch in each switch group for connected or disconnected operation according to the sampling working module. Employing this invention can realize gain in the image sensor signal, improvement with circuit structure, achieving minimal chip area, and lowered cost.06-11-2009
20100118169APPARATUS AND METHODS FOR CONTROLLING IMAGE SENSORS - A computer-implemented method for controlling an image sensor includes loading an image file having data sets associated with multiple image sensors respectively, identifying the image sensor if identification data included in one of the data sets matches to the image sensor, and configuring the image sensor according to configuration data included in the data set matching to the image sensor. The identification data indicates an identity of the image sensor. The configuration data indicates operation parameters of the image sensor.05-13-2010
20110194002Imaging device and power supply control method of imaging device - Imaging device includes an imaging element for receiving light from a subject and converting the light to an electric signal, a video signal processing circuit for performing signal processing on a video signal generated based on the electric signal, a power supply circuit for supplying power to the video signal processing circuit, a signal detection unit for receiving a backup lamp signal indicating light-on or light-off of a backup lamp from the backup lamp installed at a back part of a vehicle, and a power supply control unit for controlling the power supply circuit based on the backup lamp signal so that the supply of power is turned ON in time of light-on of the backup lamp, the supply of power is turned ON for a preset time after the light-off of the backup lamp, and the supply of power is turned OFF after the preset time has elapsed.08-11-2011
20120188423HIGH-DYNAMIC-RANGE IMAGING DEVICES - High-dynamic-range images may be produced by combining multiple integration periods of varying duration, wherein each integration is obtained using a global shutter operation. Charge accumulated during a first integration period may be stored on a first storage node while charge accumulated during a second and third integration time are carried out. Storage of charges accumulated during the second and third integration periods on a second storage node within a pixel while charge is stored on the first storage node allows capture of a global-shutter-based, high-dynamic-range image. A global-shutter-based image capture base on at least three integration time periods may provide enhanced dynamic range.07-26-2012
20100118168HIGH DENSITY COMPOSITE FOCAL PLANE ARRAY - A composite focal plane assembly with an expandable architecture has a multi-layer, double-sided aluminum nitride (AlN) substrate and vertical architecture to achieve the dual function of focal plane and electronics backplane. Imaging dice and other electrical components are mounted and wire bonded to one surface and then direct backplane connectivity is provided on the opposing surface through a matrix of electrical contacts. In one embodiment, a flexible connector is sandwiched between the AlN focal plane and a FR-4 backplane is used to compensate for differences in coefficient of thermal expansion (CTE) between the AlN and commercially available high density circuit card connectors that are commonly manufactured from materials with CTE properties more closely approximating FR-4. In an alternate embodiment, the FR-4 and flexible connectors are eliminated by using high density circuit card connectors that are fabricated out of materials more closely matching the CTE of AlN.05-13-2010
20090213253SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having a plurality of pixels two-dimensionally arranged into a matrix, each pixel containing a photoelectric conversion section for converting an incident light into signal electric charges, an accumulation section for accumulating the signal electric charges, a transfer section for transferring the signal electric charges to the accumulation section, an amplification section for amplifying and outputting as pixel signal the signal electric charges accumulated at the accumulation section, and a reset section for resetting the accumulation section by supplying an electric potential retained on a power supply line to the accumulation section, the pixel section having output signal lines provided column by column onto which the pixel signal is outputted, connected to the other end of a constant current supply having one end grounded; and a control section where, of a first one of the pixels and a second one of the pixels connected to the same one output signal line, taking the first pixel as one of the pixels subject to reading of pixel signal conforming to the incident light and the second pixel as non-subject one of the pixels set in accordance with a location of the first pixel, an output from the second pixel onto the output signal line is used at the time of outputting of the pixel signal from the first pixel onto the output signal line to effect control so that an electric potential difference between the one end and the other end of the constant current supply is kept in a range where the constant current supply is operable.08-27-2009
20100079634SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes a pixel array, and an analog to digital converter for converting a voltage signal read from the pixel array from analog to digital form, wherein the analog to digital converter includes a counter counting a first clock signal for a period depending on a voltage value of the voltage signal, and wherein a least significant bit of a count value of the counter is determined based on an exclusive OR of outputs of two 1-bit counters operating at a frequency of the first clock signal.04-01-2010
20100079641IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING ELEMENT - In an imaging apparatus having a plurality of pixel portions containing photoelectric converting portions, each of the pixel portions is provided with a writing transistor and a reading transistor, which contain a floating gate provided above a semiconductor substrate in order to store thereinto electric charges generated in the photoelectric converting portion; and a control portion for performing such a driving operation that the electric charges stored in the floating gate are ejected to a writing drain of the writing transistor and a reading drain of the reading transistor.04-01-2010
20100079640Image Sensor and Method For Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor can include a readout circuitry on a first substrate, a metal line on the first substrate and electrically connected to the readout circuitry, an insulation layer on the metal line, an electrode on the insulation layer, an image sensing device on the electrode, and a pixel separation region in the image sensing device.04-01-2010
20100079639Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. An image sensor comprises a readout circuitry, an interlayer dielectric, an interconnection, an image sensing device, and a contact. The readout circuitry is formed at a first substrate. The interlayer dielectric is formed on the first substrate. The interconnection is formed in the interlayer dielectric. The interconnection is electrically connected to the readout circuitry. The image sensing device is formed on the interconnection. The image sensing device comprises a first conductive type layer and a second conductive type layer. The contact connects the first conductive type layer of the image sensing device and the interconnection electrically. The contact is isolated from the second conductive type layer by a trench formed in the second conductive layer around the contact.04-01-2010
20100079636PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MAKING THE SAME - A photoelectric conversion device includes a semiconductor substrate, a first insulating film on the semiconductor substrate, a second insulating film on the first insulating film, a third insulating film on the second insulating film, and a wiring disposed in the third insulating film, the wiring being a wiring layer closest to the semiconductor substrate. A first plug of a shared contact structure and a second plug are disposed in the first insulating film. A third plug and a first wiring that constitute a dual damascene structure are disposed in the second and third insulating films. The first insulating film is used as an etching stopper film during etching of the second insulating film and the second insulating film is used as an etching stopper film during etching of the third insulating film.04-01-2010
20100079638Image Sensor and Method For Manufacturing the Same - Provided is an image sensor that comprises a readout circuitry, an interlayer dielectric, an interconnection, an image sensing device, an ion implantation region, a contact, and a pixel separation layer. The readout circuitry is disposed at a first substrate. The interlayer dielectric is disposed on the first substrate. The interconnection is disposed in the interlayer dielectric, and electrically connected to the readout circuitry. The image sensing device is disposed on the interconnection, and comprises a first conductive type layer and a second conductive type layer. The contact electrically connects the first conductive type layer of the image sensing device and the interconnection. The ion implantation region is formed in the second conductive type layer at a region corresponding to the contact. The pixel separation layer is disposed at a pixel boundary of the image sensing device.04-01-2010
20100079637Image Sensor and Method For Manufacturing the Same - Provided is an image sensor that comprises a readout circuitry, an electrical junction region, an interconnection, and an image sensing device. The readout circuitry is disposed at a first substrate. The electrical junction region is electrically connected to the readout circuitry at the first substrate. The interconnection is disposed in an interlayer dielectric disposed on the first substrate, and electrically connected to the electrical junction region. The image sensing device comprises a first conductive type layer and a second conductive type layer on the interconnection. The first conductive type layer is electrically connected to the interconnection through a contact plug passing through the image sensing device.04-01-2010
20100079633IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR - Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a readout circuitry formed on a first substrate; an interlayer dielectric layer including at least one metal and contact plug electrically connected to the readout circuitry; and an image sensing device formed on a second substrate, bonded to the interlayer dielectric layer, and provided with a first conductive type conduction layer and a second conductive type conduction layer. The image sensor further includes a plurality of uppermost contact plugs arranged in a three-dimensional matrix configuration at an uppermost metal area, each uppermost contact plug extending from an uppermost metal of the at least one metal to an inner portion of the first conductive type conduction layer.04-01-2010
20090295957PHOTOELECTRIC CONVERTER - Provided is a photoelectric converter capable of performing high-speed image reading and resolution switching at the same time. The photoelectric converter includes a plurality of common read lines, and thus parallel output is produced, which enables image reading at high speed. In addition, a photoelectric conversion block (12-03-2009
20100091150SOLID-STATE IMAGING DEVICE AND SIGNAL PROCESSING SYSTEM - A solid-state imaging device includes: a pixel portion configured to convert light into an electric signal; a substrate where the pixel portion is formed; an A/D conversion unit configured to convert a signal read out from the pixel portion into a digital signal; and an optical communication unit configured to convert a signal digitized by the A/D conversion unit into an optical signal, and output the optical signal, with the single optical communication unit or a plurality of the optical communication units being disposed grouped in the vicinity portion of the substrate around the pixel portion.04-15-2010
20080309804Individual Row Calibration in an Image Sensor - A column parallel image sensor such as an active pixel sensor includes a calibration circuit for the readout circuit within the active pixel sensor. The calibration circuit produces a value that is stored and used to offset any noise in the A/D converter. The calibration is carried out each time that each row is read out so in effect the calibration's individual for each pixel. Hence, any noise within the calibration evens out within the image, and is effectively random within the image and hence becomes less noticeable within the image.12-18-2008
20090201398Method and Apparatus for Detecting Camera Sensor Intensity Saturation - A method for detecting intensity saturation of a light sensor includes monitoring an electrical signal from a light sensor for detecting an intensity saturation condition of at least one pixel of the light sensor, converting the electrical signal to a digital signal, imposing a reserved bit combination on the digital signal indicating the intensity saturation condition of the pixel, and transmitting a control signal in response to the digital signal to compensate for the intensity saturation condition of the pixel. Alternatively stated, the method includes monitoring pixel data from an output of a light sensor to determine a number of pixels at saturation and a number of pixels near saturation, comparing the number of pixels at saturation to a predetermined first threshold number, comparing the number of pixels near saturation to a predetermined second threshold number, reprogramming the light sensor to adapt to more brightness if the number of pixels at saturation is above the first threshold number, and reprogramming the light sensor to adapt to less brightness if the number of pixels near saturation is below the second threshold number. An apparatus for detecting intensity saturation of a light sensor includes a saturation detector for detecting and measuring an intensity saturation condition of at least one pixel of a light sensor, the intensity saturation condition of the pixel being at saturation upon receiving light with an intensity above a predetermined level, the saturation detector emitting a digital signal with a reserved bit combination indicating the intensity saturation condition of the pixel, and a processor receiving and processing the digital signal from the saturation detector and transmitting a control signal in response to the digital signal to compensate for the intensity saturation condition of the pixel.08-13-2009
20090201394WIDE DYNAMIC RANGE IMAGE SENSOR UTILIZING SWITCH CURRENT SOURCE AT PRE-DETERMINED SWITCH VOLTAGE PER PIXEL - Disclosed are embodiments of a pixel imaging circuit that incorporates a standard photodiode. However, the imaging circuit is modified with a feedback loop to provide a first photo response over a first portion of the light sensing range (e.g., at higher light intensity range) and a second reduced-sensitivity photo response over a second portion of the light sensing range (i.e., at a lower light intensity range), thereby extending the circuits dynamic range of coverage. Also disclosed are embodiments of an associated imaging method and a design structure that is embodied in a machine readable medium and used in the imaging circuit design process.08-13-2009
20090201397Method and Apparatus for Detecting Camera Sensor Intensity Saturation - A method for detecting intensity saturation of a light sensor includes monitoring an electrical signal from a light sensor for detecting an intensity saturation condition of at least one pixel of the light sensor, converting the electrical signal to a digital signal, imposing a reserved bit combination on the digital signal indicating the intensity saturation condition of the pixel, and transmitting a control signal in response to the digital signal to compensate for the intensity saturation condition of the pixel. Alternatively stated, the method includes monitoring pixel data from an output of a light sensor to determine a number of pixels at saturation and a number of pixels near saturation, comparing the number of pixels at saturation to a predetermined first threshold number, comparing the number of pixels near saturation to a predetermined second threshold number, reprogramming the light sensor to adapt to more brightness if the number of pixels at saturation is above the first threshold number, and reprogramming the light sensor to adapt to less brightness if the number of pixels near saturation is below the second threshold number. An apparatus for detecting intensity saturation of a light sensor includes a saturation detector for detecting and measuring an intensity saturation condition of at least one pixel of a light sensor, the intensity saturation condition of the pixel being at saturation upon receiving light with an intensity above a predetermined level, the saturation detector emitting a digital signal with a reserved bit combination indicating the intensity saturation condition of the pixel, and a processor receiving and processing the digital signal from the saturation detector and transmitting a control signal in response to the digital signal to compensate for the intensity saturation condition of the pixel.08-13-2009
20090201395BACKSIDE ILLUMINATED IMAGING SENSOR WITH REDUCED LEAKAGE PHOTODIODE - A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.08-13-2009
20100123811SOLID-STATE IMAGER, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A solid-state imager includes a photoelectric conversion region for photoelectrically converting a light beam received on a light receiving surface thereof into a signal charge and a waveguide path for guiding the light beam to the light receiving surface. The waveguide path includes a plurality of waveguide members, each waveguide member guiding a light beam incident on a light incident surface thereof to a light output surface thereof. The plurality of waveguide members are laminated on the light receiving surface. A first waveguide member closest to the light receiving surface from among the plurality of waveguide members faces the light receiving surface and is smaller in area than a light incident surface of a second waveguide member farthest from the light receiving surface from among the plurality of waveguide members.05-20-2010
20080211945Image sensor with extended dynamic range - An image sensor includes a first sub-pixel, a second sub-pixel, and an image processor. The first sub-pixel generates a first image signal with a first sensitivity, and the second sub-pixel generates a second image signal with a second sensitivity less than the first sensitivity. The image signal processor adds a change in the second image signal from a saturation level to the first image signal to generate a final image signal when the first sub-pixel is saturated.09-04-2008
20080211946IMAGE SENSING APPARATUS AND IMAGE SENSING SYSTEM - An image sensing apparatus comprises an image sensing element having an image sensing unit configured to include an effective pixel area in which light is incident on arrayed pixels and a shading pixel area in which the arrayed pixels are shaded, analog-to-digital conversion units connected one-to-one to columns of the arrayed pixels, a feedback control unit configured to output, commonly on an input side of each of the analog-to-digital conversion units, an offset compensation signal for compensating for an amount of error between a reference value and an output signal of the shading pixel area output from at least one of the analog-to-digital conversion units, and offset compensation units arranged one-to-one on the input side of each of the analog-to-digital conversion units, and to compensate for offset by subtracting an output signal of the feedback control unit from an output signal of the effective pixel area.09-04-2008
20080211942Method and Design for Using Multiple Outputs of Image Sensor - A method and apparatus for correcting signal differences between at least two adjacent parts of a radiation-sensitive sensor, each containing a contiguous set of radiation-sensitive sites read out through a respective separate electronic processing mean, by increasing the perimeter of the border between the adjacent parts of the sensor read out through separate electronic processing means and using at least one set of adjacent values from each of the adjacent parts to compute a correction to be applied to a signal read out of at least one of the adjacent parts.09-04-2008
20090086070SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged into a two-dimensional array, each pixel having a photoelectric conversion means, a memory means for storing a photoelectric conversion signal of the photoelectric conversion means, a transfer means for transferring the photoelectric conversion signal to the memory means, a reset means for resetting the memory means, a discharge means for discharging the photoelectric conversion signal accumulated at the photoelectric conversion means, and a read means for reading the photoelectric conversion signal of the memory means; a vertical circuit for controlling an operation of the pixels in the pixel section, the vertical circuit having an alternate disposition in the vertical direction of a discharge control signal line connected to the discharge means of vertically adjacent ones of the pixels for controlling the discharge means and a transfer control signal line connected to the transfer means of vertically adjacent ones of the pixels for controlling the transfer means; and a concurrent control means for controlling the vertical circuit so as to cause a concurrent operation respectively of the discharge means and the transfer means.04-02-2009
20090273693SOLID-STATE IMAGING APPARATUS - Provided is a solid-state imaging apparatus which is capable of radiating heat generated in the solid-state imaging element by shifting a position of the solid-state imaging element. Also, a mechanism which suppresses an image blur caused by the shaking of a user's hand is provided therein. The solid-state imaging apparatus includes: an x-direction moving stage onto which a solid-state imaging element chip is fixed and is disposed via a x-direction movable member so as to move only in the x-direction; a y-direction moving stage disposed via a y-direction movable member so as to move only in the y-direction; and a plurality of metal spheres disposed in two-dimension is interposed between the x-direction moving stage and a heat conducting plate which is fixed onto a solid-state imaging apparatus case.11-05-2009
20090295958SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device including a photoelectric conversion portion photoelectrically converting incident light into signal charge and accumulate the signal charge, a plurality of signal lines including a transfer signal line to which a transfer signal for reading the signal charge accumulated in the photoelectric conversion portion to a floating diffusion region is input, a driver circuit inputting a plurality of desired signals into the plurality of signal lines including the transfer signal line, and a terminal circuit connected to a side opposite to a side of the transfer signal line where the driver circuit is connected and to which a control signal for securing the transfer signal line at a constant voltage is input before a desired signal of the plurality of desired signals with respect to a signal line adjacent to the transfer signal line of the plurality of signal lines is input to the signal line adjacent to the transfer signal line.12-03-2009
20090278967SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS - A solid-state image pickup device includes a semiconductor substrate having a light-incident surface, a plurality of pixels arranged on the light-incident surface, a photodiode arranged in each of the pixels, an insulating film arranged on the semiconductor substrate and configured to cover the photodiodes, wirings embedded in the insulating film, an etching stopper film distant from the lowermost wiring among the wirings, arranged adjacent to the semiconductor substrate, configured to cover at least a region where each of the photodiodes is arranged, and composed of silicon carbide, a trench arranged above each of the photodiodes so as to reach the etching stopper film, and an optical waveguide with which each of the trenches is filled, the optical waveguide having a higher refractive index than the insulating film.11-12-2009
20090284629A/D CONVERTER-INCORPORATED SOLID-STATE IMAGING DEVICE - The solid-state imaging device includes: a first node for receiving a first signal from outside the solid-state imaging device; a second node for receiving a second signal from outside the solid-state imaging device; a test signal selection circuit for outputting the first signal received at the first node and the second signal received at the second node as a test signal by switching between the first and second signals at desired timing; and a test signal input circuit for supplying the test signal from the test signal selection circuit to an input of the A/D converter.11-19-2009
20090262228SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND CAMERA - The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.10-22-2009
20090262227PHOTODIODE ARRAY AND SIGNAL READOUT METHOD FOR THE SAME - An easy and inexpensive signal readout method is provided for a photodiode array consisting of n pieces of photodiodes whose signals are sequentially read out from the first through nth photodiodes. The method includes a canceling process that is performed one or more times before performing a complete readout operation for sequentially reading out signals from all the photodiodes, and the canceling process includes the steps of sequentially reading out signals of a predetermined number of photodiodes starting from the first photodiode to cancel the signals of these photodiodes and then returning to the readout of the signal of the first photodiode. According to this method, it is possible to easily set an appropriate charging time for each photodiode and yet prevent the photodiodes from becoming saturated.10-22-2009
20090284628IMAGE SENSOR PACKAGE AND CAMERA MODULE UTILIZING THE SAME - An image sensor package includes an image sensor chip, a sidewall, an encapsulation glass, conductive material, and a plurality of solder balls. The image sensor chip comprises a photosensitive area, a non-photosensitive area surrounding the photosensitive area, and a plurality of bonding pads formed on the non-photosensitive area. The sidewall is located on the non-photosensitive are and defines a plurality of first through holes aligned with and corresponding to the bonding pads. The encapsulation glass is located on the sidewall. A plurality of solder balls are formed on the encapsulation glass aligned with the bonding pads, respectively. The encapsulation glass defines a plurality of second through holes each corresponding to a bonding pad and a corresponding solder ball. The image sensor package further comprises a conductive material through which the first and second through holes penetrate.11-19-2009
20090284631SEMICONDUCTOR PACKAGE AND CAMERA MODULE - A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.11-19-2009
20090284630SOLID-STATE IMAGING DEVICES AND ELECTRONIC DEVICES - A solid-state imaging device is disclosed. The solid-state image device has pixels in which an absorption film that absorbs short wavelength-side light is formed on a photoelectric conversion portion for desired color light through an insulation film.11-19-2009
20100220226FRONT SIDE IMPLANTED GUARD RING STRUCTURE FOR BACKSIDE ILLUMINATED IMAGE SENSOR - An image sensor includes a semiconductor substrate, a guard ring structure in the substrate, and at least one pixel surrounded by the guard ring structure. The guard ring structure is implanted in the substrate by high-energy implantation.09-02-2010
20090290054SOLID-STATE IMAGING DEVICE - A solid-state imaging-device includes a base, frame-shaped ribs provided on the base and forming an internal space, a plurality of wiring members for electrically leading the internal space of a housing formed by the base and the ribs to an external portion, an imaging element fixed to the base inside the internal space, a transparent plate fixed to an upper surface of the ribs, and connecting members electrically connecting electrodes of the imaging element to the wiring members, wherein a plurality of protrusions are provided in a region of the base that faces the imaging element, and the imaging element is fixed by adhesive to the base while being supported by the protrusions. The protrusions enable the imaging element to avoid distortion caused by following the surface of the base, thereby suppressing the effect on electrical properties of the imaging element.11-26-2009
20090290053PREDICTIVE SENSOR READOUT - A predictive sensor readout is suitable for coupling to a sensor. The predictive sensor readout includes a sampling circuit, a predictor, and a preset circuit. The sampling circuit is configured to receive and over-sample previously digitized samples of signals previously input from the sensor. The predictor is coupled to the sampling circuit and is configured to receive the over-sampled digitized samples into a signal history and to generate a predicted input from the sensor based on the signal history. The preset circuit is coupled to the predictor and the sampling circuit and is configured to present the sampling circuit to receive the predicted input from the sensor prior to sampling an actual input from the sensor.11-26-2009
20090295954SOLID-STATE IMAGING DEVICE - For a solid-state image pickup device 12-03-2009
20090102954MULTIPLEXING AND OFFSET CORRECTION SYSTEM FOR AN IMAGE SENSOR ARRAY - An imaging apparatus includes two subsets of photosensors, the two subsets being interleaved along a linear array. Each photosensor is connectable, by the operation of a shift register, to a reference line and a signal line, to permit double-sampling of signals therefrom. Each subset of photosensors is associated with its own reference line and signal line, and signals from the two subsets of photosensors can be read out largely simultaneously.04-23-2009
20090295960PHOTODIODE, PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE - A photodiode that can obtain a clear signal or image in a case in which noise that is not limited to a dark current is high, a photodiode array, and an image pickup device are provided. The photodiode includes a sensor section that is provided on a first semiconductor having a band gap energy which allows input light to be received; a modulated light-emitting section that is positioned behind the sensor section with respect to the input light, and that emits modulated light to the sensor section; and a signal processor that is formed on a second semiconductor which transmits the modulated light, and that is positioned between the sensor section and the modulated light emitting section.12-03-2009
20090096900IMAGE SENSOR DEVICE - An image sensor device is disclosed. The device comprises a plurality of unit pixels, and each unit pixel comprises a substrate and a non-absorptive color separating device overlying the substrate. The substrate comprises a plurality of photodiodes horizontally arranged in a row, and at least one bevel boundary area between the photodiodes. The non-absorptive color separating device disperses incident white light into components thereof arranged in the row according to a gradient of wave lengths of the components of white light, and introduces the components of white light to the photodiodes.04-16-2009
20100134669SOLID-STATE IMAGING APPARATUS AND CAMERA SYSTEM - A solid-state imaging apparatus has a plurality of read out circuits (06-03-2010
20110205413SOLID-STATE IMAGING DEVICE, IMAGING UNIT, AND IMAGING APPARATUS - A solid-state imaging device includes an imaging element having a light receiving surface, and a cover member disposed over and opposite to the light receiving surface of the imaging element with a space therebetween. The cover member has a quartz plate, and the optical axis of the crystal of the quartz plate is parallel to the light receiving surface.08-25-2011
20110205411PIXEL ARRAYS, IMAGE SENSORS, IMAGE SENSING SYSTEMS AND DIGITAL IMAGING SYSTEMS HAVING REDUCED LINE NOISE - A pixel array for an image sensor includes a plurality of pixels arranged in an array. The plurality of pixels are configured to be read out according to a random pattern such that non-adjacent pixels from a plurality of physical lines in the array are read out concurrently. An imaging system includes at least the pixel array and a descrambling unit. The descrambling unit is configured to descramble pixel information read out from the pixel array.08-25-2011
20080211943SOLID-STATE IMAGE PICKUP DEVICE - In a pixel unit, cells are arranged in rows and columns two-dimensionally. Each of the cells accumulates signal charge obtained by photoelectrically converting light incident on photoelectric conversion section and outputs a voltage corresponding to the accumulated signal charge. On the cells, W, R, G, and B color filters are provided. Analog signals output from the W pixel, R pixel, G pixel, and B pixel are converted into digital signals by an analog/digital converter circuit, which outputs a W signal, an R signal, a G signal, and a B signal separately. A W signal saturated signal quantity is controlled by a saturated signal quantity control circuit. Then, a signal generator circuit corrects the R signal, the G signal, and the B signal using the W signal, the R signal, the G signal, and B signal output from the analog/digital converter circuit and outputs the corrected R, G, and B signals.09-04-2008
20100277630IMAGING APPARATUS AND RADIATION IMAGING APPARATUS - Pixels including a photoelectric conversion element 11-04-2010
20110199521SOLID-STATE IMAGE SENSOR - A solid-state image sensor comprises a pixel unit having a substrate including therein a photoelectric conversion section and an optical waveguide arranged on a light incident side of the substrate so as to guide an incident light converted into a guided mode of the optical waveguide and being propagated through the optical waveguide to the photoelectric conversion section. The optical waveguide has a mode conversion section for changing a propagation state of the incident light such that the incident light being propagated through the optical waveguide has an electric field amplitude distributed with the same sign at a light incident surface of the substrate.08-18-2011
20120268632IMAGE SENSING APPARATUS WITH EXPOSURE CONTROLLER - An image sensing apparatus includes: an image sensor which generates an electrical signal commensurate with an amount of incident light, and has a photoelectric conversion characteristic comprised of a linear characteristic area where the electrical signal is outputted after being linearly converted in relation to the amount of incident light, and a logarithmic characteristic area where the electrical signal is outputted after being logarithmically converted in relation to the amount of incident light; an exposure evaluation value detector which detects an exposure evaluation value based on luminance information acquired from a subject in sensing an image of the subject; and an exposure controller which acquires a setting value for exposure based on the exposure evaluation value detected by the exposure evaluation value detector to control exposure of the image sensing apparatus, wherein the exposure controller determines a subject luminance for exposure setting based on the exposure evaluation value, and controls the exposure in such a manner that an output of the image sensor corresponding to the subject luminance for exposure setting is obtained from the linear characteristic area of the image sensor.10-25-2012
20100103299SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate.04-29-2010
20100103298Image Sensor and Method for Manufacturing the Same - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.04-29-2010
20100103297IMAGE DATA GENERATION DEVICE, IMAGE DATA GENERATION METHOD, AND IMAGE DATA GENERATION PROGRAM - An image data generator 04-29-2010
20100060761SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device 03-11-2010
20100060760IMAGING APPARATUS AND DUST REDUCTION APPARATUS - An imaging apparatus includes an imaging device operable to convert light to an electrical signal, a vibrating unit including an optical member arranged on a light-receiving surface side of the imaging device, a vibration applying unit arranged to contact the vibrating unit and vibrates upon application of a voltage, the vibration applying unit vibrating integrally with the vibrating unit to vibrate the vibrating unit, and a member operable to sandwich the vibrating unit and the vibration applying unit. A zero-amplitude reference plane of resonance produced by the integral vibration of the vibrating unit and the vibration applying unit is located on the vibrating unit.03-11-2010
20100060757SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device (03-11-2010
20110267513IMAGING APPARATUS AND PROCESSING METHOD THEREOF - An imaging apparatus is provided having: a pixel unit including an effective pixel region of multiple pixels accumulating charges generated according to incident light to output signals and an ineffective pixel region of multiple pixels outputting signals not dependent on incident light; a plurality of vertical signal lines provided for each column of pixels of pixel unit; a vertical scanning circuit that scans and selects pixels of pixel unit in row units to output signals of selected pixels of same row to plurality of vertical signal lines; and a horizontal scanning circuit that scans and selects signals of plurality of vertical signal lines to output signals of selected vertical signal lines; wherein the vertical scanning circuit selects pixels of same row of effective pixel region in row units once during one frame and selects pixels of same row of ineffective pixel region in row units multiple times during one frame.11-03-2011
20080239121IMAGING APPARATUS INCLUDING NOISE SUPPRESSION CIRCUIT - There is an imaging apparatus including a noise suppression circuit. The noise suppression circuit includes sorting of one signal of a central pixel and four signals of peripheral pixels having the same color which are close to the central pixel in the image signals in order of magnitude, calculating of an average value from the one signal of the central pixel and the four signals of the peripheral pixels, calculating of a difference value from a maximum value and a minimum value of the one signal of the central pixel and the four signals of the peripheral pixels, comparing of the difference value with an assumed noise level, and substituting of the one signal of the central pixel by an average value of two or more pixel values excluding the maximum or minimum values when the first difference value is larger than the noise level.10-02-2008
20080239120IMAGE-SENSING MODULE AND MANUFACTURING METHOD THEREOF, AND IMAGE CAPTURE APPARATUS - An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.10-02-2008
20110205414SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP DEVICE - A solid-state image pickup device including: a resin package which includes a recessed section; a solid-state image pickup element disposed in the recessed section; and a cover fixed to the recessed section via a fixing member so as to cover the solid-state image pickup element, wherein: the resin package includes a substrate integrated therewith; the substrate includes a first protruding section, a second protruding section and a branched section, the first and second protruding sections protruding from a first side of the resin package, and the branched section being disposed inside the resin package and disposed between the first and second protruding sections; and an outer peripheral section of the fixing member is disposed inside an end of the branched section when seen from the direction in which light is incident.08-25-2011
20110205412SOLID STATE IMAGE SENSOR FOR COLOR IMAGE PICK UP - A solid state image sensor for color image pick up, including: a circuit section formed on a substrate; a lower electrode layer arranged on the circuit section; a compound semiconductor thin film with a chalcopyrite structure, which is arranged on the lower electrode layer; a transparent electrode layer arranged on the compound semiconductor thin film; and a visible light filter arranged on the transparent electrode layer, wherein the lower electrode layer, the compound semiconductor thin film and the transparent electrode layer are sequentially stacked on the circuit section, and in addition, thin a film thickness of the compound semiconductor thin film below the visible light filter, and absorb only visible light. A solid state image sensor for color image pick up is provided, which does not require an infrared removal filter for luminous efficacy correction, and matches color reproduction characteristics thereof with human luminous efficacy.08-25-2011
20090167910Photosensitive microelectronic device with avalanche multipliers - Microelectronic image sensor array device comprising a plurality of elementary cells laid out according to an array and each provided with at least one photosensitive zone for capturing photon(s) and converting photon(s) into electron(s), at least one or several of said cells comprising electronic avalanche multiplier means, provided to produce, during cycles known as electron amplification cycles, a greater number of electrons than the number of electrons converted by the photosensitive zone, the device further comprising a control circuit adapted to modulate the amplification gain of each cell individually.07-02-2009
20090033778APPARATUS FOR SAMPLING OF ANALOG VIDEO DATA FROM AN IMAGE PIXEL ARRAY - Disclosed herein is a camera system and camera controller having a modularized design. Camera control functions within the controller are distributed among a number of modules, each module performing a component task of controlling a camera. Individual modules can perform tasks such as generating clock signals, digitizing an analog video signal, and providing multiplexed digital video output. Modules communicate with each other over a common bus sufficient to carry the signals necessary to control the camera. The system implements a RAM-based digital sequencer that provides the capability of loading bit patterns into memory and using these patterns to generate waveforms for clocking a CCD. Clock and readout sequences can be composed in a high level language, compiled and uploaded into the controller. Adjustable clamp and sample signal delays used in digitizing an analog video signal provide the capability to optimize the performance of the system in a given application.02-05-2009
20120287318LENS MODULE, IMAGING APPARATUS, ELECTRONIC SYSTEM, AND METHOD FOR DRIVING LENS MODULE - A compact and thin lens module that uses a flat-plate-shaped displacement device to drive a lens, and a compact, thin imaging apparatus and electronic system using the lens module.11-15-2012
20080291304IMAGING DEVICE AND DRIVING METHOD THEREOF - There is provided an imaging device which eliminates complexity in reading an image in low resolution and reading an image in high resolution and realizes prevention of decrease in frame rate. The device includes a pixel region including a plurality of pixel elements and imaging an incident light of an object as an image and a reading unit for thinning out a pixel element from the pixel region to read a thinned out image in low resolution and reading a partial image in resolution higher than the thinned out image from a partial region of the pixel region (a horizontal shift register and a vertical shift register), wherein the reading unit reads the thinned out image and the partial image from mutually different pixel elements and reads the thinned out image and the partial image as different imaging frames.11-27-2008
20080309807Solid-state image pickup device and electronic apparatus including same - A camera module 12-18-2008
20100182470SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE - A pixel output line (07-22-2010
20110007194SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A solid-state imaging device and an electronic device that includes the solid-state imaging device prevents shifting of a photoelectric conversion region due to long-wavelength light passing to subsurface portions of the solid-state imagine device. The device include a photo diode having an upper layer of a first conductivity type formed over a second layer having an accumulation region of a second conductivity type. The upper layer is a light-receiving portion of the photodiode. A multi-stage element isolation layer is included and has a plurality of layers of the first conductivity type, such that a first lateral side of a first stage of the multi-stage layer abuts the accumulation portion, and a second stage of the multi-stage layer is separated by a width W from the accumulation region of an intermediate portion of a second conductivity type.01-13-2011
20080291303SOLID-STATE IMAGING DEVICE AND CAMERA - Provided is a solid-state imaging device which is able to achieve reductions in size and in thickness of the device, while being also able to have an auxiliary function of imaging lenses, an infrared cut filter, an antireflection function, a dust preventing function for downsizing of packaging, and an infrared light imaging function for capturing images at night. The solid-state imaging device includes: a light-collecting element which collects incident light; and a transparent thin film formed above the light-collecting element, and an air gap is formed between the light-collecting element and the transparent thin film. On the transparent thin film, the auxiliary function of imaging lenses, the infrared cut filter, the antireflection function, the dust preventing function for downsizing of packaging, and the infrared light imaging function for capturing images at night are integrated.11-27-2008
20080291305SOLID STATE IMAGING DEVICE AND CAMERA - In a solid state imaging device having a wide dynamic range, a pixel includes a photodiode that generates a charge in accordance with an intensity of incident light, signal generation units that generate a first voltage level in accordance with an amount of charge generated by the photodiode in an exposure period T11-27-2008
20110007196SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion.01-13-2011
20110007195IMAGE PICKUP LENS, IMAGE PICKUP DEVICE, DIGITAL APPARATUS AND MANUFACTURING METHOD OF IMAGE PICKUP LENS - To provide an inexpensive image pickup lens ensuring mass productivity and preventing deterioration of images due to fluctuation of a paraxial image-point position caused by water absorption, image pickup device, digital apparatus, and a manufacturing method of the image pickup lens, the image pickup lens includes: at least one lens block including a lens substrate, and a lens portion or lens portions formed on at least one of an object-side surface or an image-side surface of the lens substrate. The lens portion is formed of an energy-curable resin material which is different from a material of the lens substrate. At least one lens portion has a dimension change rate caused by water absorption which is larger than a dimension change rate caused by water absorption of the lens substrate, and satisfies the predetermined expression about a change in refractive index the energy-curable resin material caused by water absorption.01-13-2011
20100141816SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA - A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.06-10-2010
20120092536SOLID-STATE IMAGE PICKUP APPARATUS AND CAMERA - A solid-state image pickup apparatus supplies power during a driving for a signal read via a pixel transistor that is adjacent in a Y direction (vertically). In the solid-state image pickup apparatus, for resetting, a drive pulse RsrD is supplied on a drain line connected in the horizontal direction.04-19-2012
20090079857SOLID-STATE IMAGING DEVICE, RECEIVED-LIGHT INTENSITY MEASURING DEVICE, AND RECEIVED-LIGHT INTENSITY MEASURING METHOD - The received-light intensity measuring device includes: a pixel circuit 03-26-2009
20090160984Analog to digital converting device and image pickup device for canceling noise, and signal processing method thereof - An image pick-up device includes a first correlated double sampling circuit configured to generate a first sampling signal by performing correlated double sampling on an active pixel signal output from an active pixel and generating a first comparison signal by comparing the first sampling signal with a reference signal, and a second correlated double sampling circuit to generate a second sampling signal by performing correlated double sampling on an OB pixel signal output from an optical black pixel and generating a second comparison signal by comparing the second sampling signal with the reference signal.06-25-2009
20090128675PHYSICAL INFORMATION ACQUISITION METHOD, A PHYSICAL INFORMATION ACQUISITION APPARATUS, AND A SEMICONDUCTOR DEVICE - In particular for a solid-state image sensor with high resolution, a control line is not driven at any of two end points of the control line, but the control line is driven at two arbitrary dividing points on the control line. Preferably, two points on control line whose distance from a closer end of a range in which skew is to be suppressed is equal to ¼ of the total length of the range may be selected as the dividing points at which the control line is driven. In this case, the time constant at points farthest from the driving points becomes ¼ of that which occurs when the control line is driven at both end points thereof and 1/16 of that which occurs when the control line is driven at one end point thereof, and thus, theoretically, the skew can be reduced to ¼ or 1/16 of that which occurs when the control line is driven at both end points or only one end point.05-21-2009
20090160982SENSOR DEVICE AND METHOD THEREOF - A sensor device determines a value based on a sensed parameter by applying a voltage across two voltage terminals of a sensor. In response, the sensor provides an electrical signal representative of a sensed parameter to a controller via a pair of conductors. The controller samples the electrical signal to determine the value. In addition, the controller alternates the polarity of the voltage applied to the voltage terminals, thereby reducing the risk of damage to the conductors due to ion drift.06-25-2009
20090160985METHOD AND SYSTEM FOR RECOGNITION OF A TARGET IN A THREE DIMENSIONAL SCENE - A method for three-dimensional reconstruction of a three-dimensional scene and target object recognition may include acquiring a plurality of elemental images of a three-dimensional scene through a microlens array; generating a reconstructed display plane based on the plurality of elemental images using three-dimensional volumetric computational integral imaging; and recognizing the target object in the reconstructed display plane by using an image recognition or classification algorithm.06-25-2009
20090185060SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, AND CAMERA - Disclosed is a solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer.07-23-2009
20110025895A/D CONVERTER UNIT FOR IMAGE SENSOR - A high-speed, high-resolution column A/D converter having a noise reduction function to eliminate a fixed pattern noise etc. is provided with a small circuit scale. Each column A/D converter includes a dual-output D/A converter for selecting two reference voltages from among a reference voltage group supplied in common to each column A/D converter, so as to output the two reference voltages to sandwich each sensor signal voltage input to each column A/D converter, along with a charge-redistribution D/A converter having a full scale determined by the above two reference voltages. Thus, the high-speed, high-resolution column A/D converter is achieved with a small circuit scale. Further, by the utilization of high-speed conversion capability, noise reduction is performed through digital calculation after the A/D conversion.02-03-2011
20120069229UNIVERSAL IMAGE SENSOR CHIP INTERFACE - An imaging system including at least one video channel having a plurality of imaging chips. Each imaging chip includes a command interpretation unit. The command interpretation unit includes a clock input, a data-in input and a data valid input. The clock input accepts a clock signal, the data-in input accepts a formatted bit sequence and the data valid input selectably causes the data-in input to accept the formatted bit sequence. The formatted bit sequence includes a class code and a function code. The command interpretation unit is adapted to interpret the formatted bit sequence and subsequently to output a control event based on the formatted bit sequence.03-22-2012
20080316346Color solid-state image pickup device and method for reading out pixel signals - A color solid-state image pickup device includes a pixel section having sets of a total of four adjacent pixels arrayed 2×2 in horizontal and vertical directions. Each of the sets consists of an first pixel serving as an upper left pixel and having a first spectral characteristic, a second pixel serving as an upper right pixel and having a second spectral characteristic, a third pixel serving as a lower left pixel and having a third spectral characteristic, and a fourth pixel serving as a lower right pixel and having a fourth spectral characteristic. The pixel section is formed by arraying the sets in the horizontal and vertical directions so that the sets form a matrix. The color solid-state image pickup device uses, as a unit of addition, a total of 16 pixels consisting of four adjacent sets arrayed 2×2 in the horizontal and vertical directions. The color solid-state image pickup device adds up and reads out respective pixel signals of the pixels. The color solid-state image pickup device creates a luminance signal by adding up and reading out respective pixel signals of the first, second, third, and fourth pixels constituting the set. This makes it possible to achieve both high sensitivity and high resolution by inhibiting the resolution from being reduced by adding up pixel signals.12-25-2008
20090141153SOLID-STATE IMAGING DEVICE - To provide a solid-state imaging device that can capture an image which is bright through to its periphery, even when used in a single-lens reflex digital camera that accepts various interchangeable lenses from wide-angle to telephoto. The solid-state imaging device includes a two-dimensional array of unit pixels each of which includes a light-collecting element. A light-collecting element in a unit pixel is a combination of circular-sector-shaped light-collecting elements having different concentric structures. A central axis of the concentric structures is perpendicular to a light-receiving plane of the light-collecting element. Each of the circular-sector-shaped light-collecting elements is divided into concentric zone areas of a width equal to or smaller than a wavelength of incident light. Thus, an image which is bright through to its periphery can be captured even when light incident on a unit pixel changes from wide-angle to telecentric (chief rays are approximately parallel to an optical axis).06-04-2009
20090015698METHOD AND APPARATUS FOR COMPENSATING SIGNAL DISTORTION CAUSED BY NOISE - Provided are an apparatus and a method for compensating signal distortion caused by noise. The apparatus comprises a noise reduction unit which reduces noise of an input signal including non-zero mean random noise, and a signal compensator which compensates the output signal of the noise reduction unit so that a signal distortion due to the non-zero mean random noise is removed from the output signal of the noise reduction unit.01-15-2009
20090033777IMAGE SENSOR WITH CORNER CUTS - The invention relates to image sensors using a chip with cut corners. The sensor comprises a chip with cut corners comprising a matrix (02-05-2009
20110221942DATA PROCESSOR, SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS - A data processor including: a reference signal generator configured to generate a reference signal, which is used to convert a level of an analog processing signal into digital data, that gradually varies to enhance an amplitude of the processing signal; a comparator configured to compare the processing signal with the reference signal generated by the reference signal generator; and a count period controller configured to perform a real number count operation of performing a count process during a period from a time point when the reference signal has a predetermined initial value to a time point when the processing signal is equal to the reference signal or a complement number count operation of performing a count process during a period from a time point when the processing signal is equal to the reference signal to a time point when the reference signal reaches a predetermined final value, on the basis of the comparison result of the comparator, wherein, the count period controller independently controls the real number count operation and the complement number count operation of the counter on the basis of a predetermined criterion.09-15-2011
20110141328SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor including a plurality of pixels formed on a semiconductor substrate, each pixel comprising a photoelectric conversion element including a charge accumulation region of a first conductivity type, a floating diffusion of the first conductivity type, and a transfer transistor which transfers charge in the charge accumulation region to the floating diffusion, comprises an element isolation region made of an insulator and arranged to isolate adjacent pixels from each other, and an impurity diffusion region of a second conductivity type arranged inside the semiconductor substrate to isolate adjacent pixels from each other, wherein a peak position of an impurity concentration of the impurity diffusion region of one pixel is disposed within a width of the floating diffusion, of the one pixel, along a straight line passing through the photoelectric conversion element, a gate electrode of the transfer transistor, and the floating diffusion which are of the one pixel.06-16-2011
20090086067SOLID-STATE IMAGING DEVICE, DRIVING CONTROL METHOD THEREOF, AND IMAGING APPARATUS - A solid-state imaging includes a comparing circuit, an inverting circuit, and a masking circuit, and performs column parallel AD conversion processing of analog pixel signals outputted from a plurality of pixels arranged in a two-dimensional matrix form. The comparing circuit outputs a difference signal obtained by comparing each of the pixel signals outputted from the pixels with a reference signal having a ramp waveform. The inverting circuit inverts a logic of the difference signal outputted from the comparing circuit. The masking circuit masks an output of an output signal of the inverting circuit to a circuit in a subsequent stage during an input offset canceling period in which the comparing circuit is canceling an input offset between the pixel signal and the reference signal.04-02-2009
20090079858IMAGE DISPLAY DEVICE - Disclosed is a scanning image display device for displaying an image on a plurality of display screens. The image display device includes a light source, a scanner for two-dimensionally scanning with light from the light source, and a controller which is electrically connected with the light source and the scanner. The controller controls the light source and the scanner to form an image on the surfaces to be scanned. The scanner is configured to be capable of scanning the independent plurality of scanning surfaces with the light from the light source.03-26-2009
20090079856SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR - A solid-state imaging device and a driving method thereof are disclosed. The solid-state imaging device includes a pixel array, vertical signal lines, a constant current source, a signal processing circuit. The pixel array includes a plurality of pixels arranged in a matrix. The vertical signal lines are disposed for each pixel column in the pixel array and connected to a transistor at an output stage of the pixels in a source-follower configuration. The constant current source supplies a constant current to the vertical signal lines. The signal processing circuit reads out electrical signals from the pixels. One side of the vertical signal lines are connected to the constant current sources, and the other side of the vertical signal lines are connected to the signal processing circuit.03-26-2009
20090086069SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING SYSTEM USING THE SAME - A solid-state imaging device having within a pixel region where pixels containing photoelectric conversion device are two-dimensionally arranged, a plurality of noise extracting pixels for outputting a noise signal not depending on incident light amount provided in an effective pixel region from which image signal associated with object image is outputted, disposed in a manner scattered into two dimensions so that, taking N×N (N being an integer of 2 or more) pixels within the effective pixel region as unit block, at least one is provided in each row and in each column within that unit block.04-02-2009
20090086068SOLID-STATE IMAGE PICK-UP DEVICE AND IMAGE PICK-UP APPARATUS - A solid-state image pickup device includes plural photo sensitive elements. The plurality of photosensitive elements are arranged to form a matrix pattern. The photosensitive elements include first photosensitive elements that obtain simultaneously brightness components and hue components; and second photosensitive elements that obtain hue components. The second photosensitive elements are hue photosensitive elements. And the number of the first photosensitive elements is equal to that of the hue photosensitive elements.04-02-2009
20090190012Solid-state imager device, drive method of solid-state imager device and camera apparatus - In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 07-30-2009
20090096901Image sensor - An image sensor may include a first common column line and/or at least one first pixel. The at least one first pixel may be connected to the first common column line. The at least one first pixel may include a first photoelectron conversion region, a first transfer gate, a first overflow gate, and/or a first overflow drain region. The first transfer gate may be between the first photoelectron conversion region and the first common column line. The first overflow gate may be spaced from the first transfer gate. The first photoelectron conversion region may be between the first overflow gate and the first transfer gate. The first overflow drain region may be on an opposite side of the first photoelectron conversion region with respect to the first transfer gate. The first overflow gate may be between the first overflow drain region and the first photoelectron conversion region.04-16-2009
20090231476SOLID-STATE IMAGING APPARATUS AND APPARATUS USING THE SAME - A solid-state imaging apparatus including: an imaging section having pixels arranged into a matrix; a conversion section for digitizing pixel signals; a block memory section formed of a first line memory corresponding to at least N lines (N being an integral number of 2 or more) for retaining the pixel signals; and a drive control section for controlling so as to read out and cause to be retained at the block memory section pixel signals corresponding to M lines (M being an integral number between 2 and N inclusive) in a period shorter than period necessary for an external circuit to process pixel signals corresponding to 1 line, and then controlling so as to bring into halt condition at least one of imaging section and conversion section in a remaining period in the period necessary for external circuit to process pixel signals corresponding to M lines.09-17-2009
20090231477SOLID-STATE IMAGE PICKUP APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup apparatus includes: a first major surface on which a light receiving portion is formed; a second major surface opposed to the first major surface, and a hermetic seal portion formed on the first major surface, for sealing the light receiving portion, the hermetic seal portion being formed by a flat plate portion made of a transparent inorganic insulating member and a frame portion made of an inorganic insulating film.09-17-2009
20090086066Solid-state imaging device, method of manufacturing the same, and camera - Disclosed is a solid-state imaging device includes for each pixel a photoelectric conversion unit, a charge accumulating portion, and a potential barrier provided between the photoelectric conversion unit and the charge accumulating portion, in a thickness direction of a substrate. When light is received, a first charge derived from one of electron-hole pairs generated by photoelectric conversion is accumulated in the photoelectric conversion unit as signal charge, and the potential barrier is modulated by a second charge derived from the other of the electron-hole pairs so that the first charge that has accumulated in the charge accumulating portion is supplied to the photoelectric conversion unit.04-02-2009
20080316344IMAGE PICKUP ELEMENT MODULE, AND LENS UNIT AND PORTABLE ELECTRONIC DEVICE USING IMAGE PICKUP ELEMENT MODULES - In an image pickup element module, a heat releasing member disposed to be thermally coupled to an FPC substrate and an image pickup element is formed of a PPS resin material having good thermal conductivity. Further, this image pickup element module is configured so that a phase-changing heat storage which is insert-molded or formed into a sheet shape is disposed to be thermally coupled to the heat releasing member.12-25-2008
20080316345IMAGING ELEMENT AND IMAGING DEVICE - An imaging element and an imaging device of the present invention have photoelectric conversion sections arranged two-dimensionally with respect to the surface of a semiconductor substrate; a color filter layer that is made up of a plurality of color filters for decomposing incident light into different colors and brightness filters for causing light including all color components to pass and where the plurality of color filters and the brightness filters are arranged at positions above the photoelectric conversion sections; vertical charge transfer sections linearly extended so as to transfer signal charges read from the respective photoelectric conversion sections; reading regions for reading signal charges generated by the photoelectric conversion sections to the vertical charge transfer sections; and light-shielding films that are provided so as to cover the vertical charge transfer sections and that have opening sections located above the respective photoelectric conversion sections. The opening sections of the light-shielding films of the pixels where the color filters are disposed are formed so as to become smaller than the opening sections of the pixels having the brightness filter in terms of a horizontal distance between the reading region of the adjacent pixel and an open edge of the opening section.12-25-2008
20080316343Method and Apparatus For Allowing Access to Individual Memory - A method for detecting color temperature and an apparatus thereof are disclosed. According to the present invention, the apparatus for detecting color temperature converts RGB color information, generated by interpolating an image signal sequentially inputted in units of pixel from an image sensor, to a three-dimensional coordinate value of luminance, R-G color difference information, and B-G color difference information, and then renews the added value per color, if included in a filtering zone corresponding to a characteristic curve of the image sensor Then, an average value per color is generated in units of frame, and the compensation rate per color is determined such that the average value per color becomes identical to each other With the present invention, accurate colors can be displayed by detecting the color temperature of the current light source and correcting the distorted color information.12-25-2008
20090009641DA CONVERTER, AD CONVERTER, AND SEMICONDUCTOR DEVICE - A DA converter includes a first DA conversion section for obtaining an analog output signal in accordance with a digital input signal value, and a second DA conversion section for obtaining an analog gain control output signal in accordance with a digital gain control input signal value. In the DA converter, the gain control of the analog output signal generated by the first DA conversion section is performed on the basis of the gain control output signal generated by the second DA conversion section.01-08-2009
20090201396Methods for operating image sensors - A method for operating image sensors is provided. The method for operating image sensors includes maintaining a charge transmission unit which transfers charges generated in a photoelectric conversion unit by responding to incident light to a charge detection unit in an inactive state; and toggling the charge transmission unit between an active state and an inactive state while a reset unit resets the charge detection unit, wherein the toggling is repeated multiple times while a reset unit which resets the charge detection unit is maintained in active state.08-13-2009
20090244338SOLID STATE IMAGING APPARATUS - A solid-state imaging apparatus including: a pixel section having a first pixel shielded from light and a second pixel provided in a region over which an object image is formed; a delay circuit having delay devices connected into a multiple of stages for giving to a running pulse a delay amount corresponding to a difference between an analog output value of each pixel from the pixel section and an analog reference value; an encoder to be reset by the unit of pixel with sampling and encoding a running position of the pulse at every predetermined timing; a first storage section for retaining an encoded value corresponding to the first pixel; a second storage section for retaining an encoded value corresponding to the second pixel; and a differential circuit for computing and outputting as a digital pixel signal a difference between an output from the first storage section and an output from the second storage section.10-01-2009
20110228150PHOTOELECTRIC CONVERSION FILM STACK-TYPE SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A photoelectric conversion film stack-type solid-state imaging device includes a semiconductor substrate, a photoelectric conversion layer, and a conductive light shield film. A signal reading portion is formed on the semiconductor substrate. The photoelectric conversion layer is stacked above the semiconductor substrate and includes a photoelectric conversion film formed between a first electrode film and a second electrode films which is divided into a plurality of regions corresponding to pixels respectively. The conductive light shield film is stacked above a light incidence side of the photoelectric conversion layer and is electrically connected to the first electrode film at an outside of an effective pixel region.09-22-2011
20090244334SYSTEMS AND METHODS TO PERFORM DIGITAL CORRELATED DOUBLE SAMPLING USING SUCCESSIVE APPROXIMATION ANALOG TO DIGITAL CONVERSION TECHNIQUES - An imager includes a successive approximation analog-to-digital converter (SA-ADC) and an arithmetic memory. The successive approximation analog-to-digital converter converts analog representations of pixel reset and image signals for a pixel to digital representations of the pixel reset and image signals. The arithmetic memory generates a difference signal that represents the difference between the digital representations of the pixel reset signal and the pixel image signal using a most-significant-bit-first (MSB-first) calculation.10-01-2009
20090251577IMAGE SENSING APPARATUS - An image sensing apparatus has an image sensing device. The image sensing device includes a photoelectric conversion element that photoelectrically converts an optical image to acquire image data, and a readout control unit that reads out, in accordance with a supplied readout rule, the image data acquired by the photoelectric conversion element. The image sensing device also includes an image scaling ratio selection unit that selects the scaling ratio of the image to be output, a readout scheme selection unit that selects, in accordance with the selected image scaling ratio, the readout scheme of the image data to be read out from the photoelectric conversion element by the readout control unit, and a readout rule supply unit that supplies, to the readout control unit, a readout rule corresponding to the readout scheme selected by the readout scheme selection unit.10-08-2009
20090251576SOLID-STATE IMAGE CAPTURING APPARATUS AND ELECTRONIC INFORMATION EQUIPMENT - A solid-state image capturing apparatus according to the present invention includes: a pixel array in which a plurality of pixels are arranged; a driving circuit for driving each pixel of the pixel array; and a power supply circuit for stepping down an external source voltage supplied from an external power source to generate a pixel source voltage to be supplied to each pixel of the pixel array, where the power supply circuit includes a driver transistor for generating a pixel source voltage from the external source voltage and the driver transistor is operative in a saturated state.10-08-2009
20090251575IMAGING APPARATUS AND METHOD FOR DRIVING THE IMAGING APPARATUS - An imaging apparatus includes a solid-state imaging device, a derive section and a signal processing section. The imaging device includes plural pixels arranged on a surface of a semiconductor substrate. The pixels include plural chromatic color pixels for plural colors and plural high-sensitivity pixels having a higher sensitivity to incident light than the chromatic color pixels. The drive section controls the imaging device to simultaneously start exposing the chromatic color pixels and exposing the high-sensitivity pixels, to read first signals from the high-sensitivity pixels during an exposure period, respectively and hold the read first signals, thereafter, to read second signals from the high-sensitivity pixels, respectively, and to read third signals from the chromatic color pixels, respectively. The signal processing section produces color image data based on the first signals, the second signals and the third signals.10-08-2009
20090251574Electronic device, electronic camera, and data transfer program - An electronic device includes: a data transfer unit that transfers data between a first recording medium and a second recording medium; an indication unit that indicates a communication protocol and a data transfer rate to be used in data transfer to the transfer unit; a judgment unit that judges whether or not the data transfer is successful; a control unit that controls the indication unit to indicate a communication protocol and a data transfer rate to be used in data transfer, after the judgment whether or not the data transfer is successful, based on the communication protocol used in the data transfer, the data transfer rate used in the data transfer, and the judgment whether or not the data transfer is successful.10-08-2009
20120105694TIME AD CONVERTER AND SOLID STATE IMAGE PICKUP DEVICE - Disclosed is a time AD converter which is provided with an annular delay circuit, a digital signal generation unit, and an annular delay circuit control unit. The annular delay circuit has n delay units (where n is a natural number equal to or larger than 2). The digital signal generation unit generates a digital signal corresponding to an analog signal by using an output of the annular delay circuit. The annular delay circuit control unit controls a current which is input to the n delay units in accordance with an external environmental signal.05-03-2012
20120105692ANTI-BLOOMING PIXEL SENSOR CELL WITH ACTIVE NEUTRAL DENSITY FILTER, METHODS OF MANUFACTURE, AND DESIGN STRUCTURE - A method of preventing blooming in a pixel array includes affecting an amount of light that impinges on a photoelectric conversion element by adjusting a transmissivity of an electrochromic element based on an output of the photoelectric conversion element.05-03-2012
20090256936METHOD OF DRIVING SOLID-STATE IMAGING APPARATUS - When a horizontal skipping operation is performed in a solid-state imaging apparatus that includes an A/D converting circuit in each column and that applies an arithmetic operation process to a digitalized signal and an arithmetic operation is performed with signals held by a plurality of register circuits, A/D converters and register circuits in columns in which signals are skipped, or not read out, are not involved in the operations. A more consideration is needed in terms of the use efficiency of circuits. A unit for connecting a register circuit of a certain column and a register circuit of a different column is arranged.10-15-2009
20090244335CORRELATED DOUBLE SAMPLING CIRCUIT AND CMOS IMAGE SENSOR UNIT - Embodiments of the present invention provide a correlated double sampling (CDS) circuit and a CMOS image sensor unit using the CDS circuit. The CDS circuit shifts levels of sampled sensing signal and reset signal with equal amounts. Thus a voltage difference of the sampled sensing signal and the reset signal remains unchanged, and their levels may fall within a linear input range by adjusting their levels. Compared to a conventional CDS circuit, a gain of the CDS circuit provided by the embodiment of the present invention is not reduced, and thus a design complexity of a rear circuit thereof is lower, and an induced noise is relatively low. Furthermore, the CMOS image sensor unit using the CDS circuit provided by the embodiment also has these advantages.10-01-2009
20090244336IMAGE SENSING DEVICE OF A CAMERA - An image acquisition device of a camera that has an electronic sensor chip electrically connected to a circuit board, includes an objective situated in an objective carrier, and oriented in regard to situation and inclination in relation to an imager surface of the sensor chip. The situation and inclination of the objective are defined by a contact surface of the objective carrier. The contact surface of the objective carrier lies flat on the sensor chip, so that the imager surface is not covered by the contact surface.10-01-2009
20090273692REFERENCE DATA ENCODING IN IMAGE SENSORS - Data is encoded on an image sensor that has a plurality of pixels including one or more bio-sensing pixels and one or more data encoding pixels. The method includes applying a covering material selectively to the data encoding pixels depending on the data to be encoded, the covering material having a detectable difference in opacity relative to having no covering material present. The method includes reading the data encoding pixels, in the presence of light, and decoding data according to a pre-determined scheme depending on the presence of the covering material on the data encoding pixel. As bio-reagents are typically applied after manufacture of the image sensor, the image sensor can have information encoded for electronic detection subsequent to manufacture.11-05-2009
20080259192Apparatus and method for capturing images - Provided are an apparatus and a method for capturing images by applying different color filters to two pixel regions with IR blocking filters removed so that optical signals in the visible band and IR signals can be received. The apparatus includes a filter unit having a plurality of filters having different wavelength bands; a sensor unit sensing optical signals passing through the filters; and a signal-extraction unit extracting detailed optical signals in respective wavelength bands by using the difference between the sensed optical signals.10-23-2008
20100265372SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes: a semiconductor substrate; photoelectric conversion units formed in array on the semiconductor substrate and forming a light receiving unit; and wiring sections formed in positions among the photoelectric conversion units. The wiring sections include wiring bodies formed by superimposing wiring layers on the light receiving unit and including a bottom wiring body on the semiconductor substrate side, a top wiring body on an uppermost side, and an intermediate wiring body between the bottom wiring body and the top wiring body, and contacts connecting the wiring bodies in order of vertical overlap, and in at least one of the wiring sections, the wiring bodies other than the bottom wiring body are superimposed while being shifted from a position right above the bottom wiring body, and amounts of shift of the intermediate wiring body and the contacts connected to the intermediate wiring body are the same.10-21-2010
20090316029SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes: an image pickup portion in which are arranged a plurality of pixels with a photo-electric conversion element, the pixels which generate and output a signal in accordance with the intensity of an incident electromagnetic wave; a frequency conversion portion that includes a link circuit in which a plurality of inversion circuits with a first terminal and a second terminal are linked in a ring, each of the inversion circuits having a varying delay time from an input signal to an output signal based on the voltage difference between the voltage supplied to the first terminal and the voltage supplied to the second terminal, and the frequency conversion portion which generate clock pulses at a frequency based on the voltage difference; a count portion which counts the clock pulses generated by the frequency conversion portion; and a transistor including: a third terminal to which is input a predetermined voltage; a fourth terminal connected to the first terminals; and a fifth terminal to which are input signals from the pixels, the transistor controlling a current that is passed between the third terminal and the fourth terminal based on a signal that is input to the fifth terminal.12-24-2009
20090316027IMAGE ACQUISITION DEVICE WITH ANTENNA MODULE - An image acquisition device with an antenna module is described. A signal transmission line is electrically connected to an image acquisition unit and the antenna module, so as to deliver an image acquired by the image acquisition unit and a signal received by the antenna module via the signal transmission line.12-24-2009
20090295956Decimation filters, analog-to-digital converters including the same, and image sensors including the converters - An image sensor includes an analog-to-digital converter (ADC) and a decimation filter. The decimation filter includes a first digital data generator and a second digital data generator. The first digital data generator is configured to integrate sigma-delta modulated M-bit pixel data and output N-bit pixel data based on an integration result. The second digital data generator is configured to integrate the N-bit pixel data, generate P-bit pixel data based on an integration result, and output the P-bit pixel data as decimated data.12-03-2009
20100157120IMAGE SENSOR WITH CONTROLLABLE TRANSFER GATE OFF STATE VOLTAGE LEVELS - A CMOS image sensor or other type of image sensor comprises a pixel array and a signal generator coupled to the pixel array. The pixel array comprises a plurality of pixels each having a photosensitive element coupled to a transfer gate. The signal generator is configured to generate a transfer gate signal for application to at least one of the transfer gates. The transfer gate signal has at least an on state voltage level and first and second off state voltage levels, with the first off state voltage level typically having a higher magnitude than that of the second off state voltage level. In an illustrative embodiment, the second off state voltage level is utilized during a readout operation in order to reduce dark current in floating diffusion regions of the pixel array.06-24-2010
20100157121IMAGE SENSOR WITH TIME OVERLAPPING IMAGE OUTPUT - An image sensor system with an image sensor that generates a first image and a second image. The first and second images are transmitted to a processor in a time overlapping manner. By way of example, the images may be transferred to the processor in an interleaving manner or provided on separate dedicated busses.06-24-2010
20100002109IMAGING APPARATUS, METHOD FOR CONTROLLING THE IMAGING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM STORING THE SAME - An imaging apparatus includes an image sensor configured to capture an image of a subject, a finder optical system configured to enable a photographer to optically observe the subject, a light-metering unit configured to perform a light-metering operation for a light flux that enters the finder optical system, an image display unit disposed in the finder optical system and configured to display an image of the subject captured by the image sensor and to enable the photographer to observe an image of the subject captured by the image sensor when the photographer looks in the finder optical system, and a control unit configured to prevent the image display unit from performing the display of the image when the light-metering unit performs the light-metering operation.01-07-2010
20100182467UNIT PIXEL HAVING 2-TRANSISTOR STRUCTURE FOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A unit pixel having a pixel constructed with a photodiode and a 2-transistor for an image sensor is disclosed. The unit pixel having a 2-transistor structure for an image sensor includes: a photodiode containing impurities having an opposite type of a semiconductor material; a reset transistor connected to the photodiode to initialize the photodiode; and a transistor having selecting and reading-out functions connected to the photodiode to have functions of controlling connection between a pixel and an external lead-out circuit and reading-out the information of the pixel. Accordingly, an aperture surface rises and a pixel size decreases, so that sensitivity increases. Also, the fill factor of the photodiode increases significantly due to a decrease of the number of the transistor, so that the sensitivity increases and costs reduce.07-22-2010
20100182471SOLID-STATE IMAGE DEVICE, METHOD FOR PRODUCING THE SAME, AND IMAGE PICKUP APPARATUS - A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.07-22-2010
20100165159SOLID STATE IMAGING DEVICE - A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.07-01-2010
20100165158METHOD AND APPARATUS FOR SENSOR CHARACTERIZATION - The detailed technology relates to optical sensors, and more particularly relates to characterizing local behaviors of a sensor, and using such characterization information in a sensor-based system. In a particular arrangement, output signals produced from each of plural sensing elements in a 2D optical sensor are checked to determine whether they tend to differ from output signals produced by one or more neighboring sensing elements—when combined across plural captured image frames. The results are stored in an associated memory, and can be consulted in determining how image data captured from the sensor should be used. The technology is particularly illustrated in the context of a watermark decoder for a cell phone camera. A variety of other features and arrangements are also detailed.07-01-2010
20090295955SOLID-STATE IMAGE SENSOR DEVICE AND DIFFERENTIAL INTERFACE THEREOF - A solid-state image sensor device and a differential interface thereof that are capable of ensuring stable transmission of image data while reducing power consumption. In an aspect of the present invention, a solid-state image sensor device comprises an image sensor section for outputting analog signals of an image being taken; a plurality of AD converter sections, arranged with respect to the column direction of the image sensor section, for converting the analog signals into digital signals; a drive circuit section for controlling the image sensor section and the AD converter sections; and a plurality of differential interface sections for transmitting the digital signals converted by the AD converter sections as differential output signals to an external device. Further, each of the differential interface sections comprises a current value changeover circuit for selecting a constant current to be applied in each differential interface section in accordance with each of a plurality of operation modes, and an offset voltage holding circuit for maintaining a constant offset voltage level for the differential output signals even when an operation mode changeover is made.12-03-2009
20100188536SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, CAMERA, AND DRIVE METHOD - The semiconductor element according to an aspect of the present invention is a solid-state imaging element formed on a semiconductor substrate, having an overflow drain structure for draining excessive charges generated in photoelectric conversion elements, and reading out signal charges accumulated in the photoelectric conversion elements to a vertical transfer unit via a readout gate electrode. The solid-state imaging element includes: a first voltage generating circuit which applies, to the semiconductor substrate, substrate voltage defining the height of overflow barrier in the overflow drain structure; and a second voltage generating circuit which selectively generates first voltage and second voltage each including the height of pulse wave superimposed onto the substrate voltage, at a time when readout pulse to be applied to the readout gate electrode is generated.07-29-2010
20100002111Photodetecting Circuit - A photodetecting circuit is disclosed which includes a photodetector for generating a signal in response to incident light, astorage node, transfer and reset transistors and an output circuit. The storage node has first and second node terminals. The second node terminal is connected to a compensation signal during a read period of the photodetection circuit. The transfer transistor is disposed intermediate the first node terminal of the storage node and the photodetector and is for electrically connecting the first node terminal and the photodetector during an integration period upon receiving a transfer signal to a gate of the transfer transistor, allowing charge stored in the storage node to change based on the signal of the photodetector. The reset transistor has a control node for receiving a reset signal, a first terminal for receiving a reset voltage, and a second terminal electrically connected to the first node terminal, such that the reset voltage is supplied to the first node terminal when the reset signal is asserted at a gate of the reset transistor. The output circuit generates an output signal during the read period of the photodetecting circuit. The output signal is at least partially based on a voltage at the first terminal. The compensation signal is a logically negated version of the transfer signal.01-07-2010
20100002110IMAGING DEVICE AND METHOD OF DRIVING SOLID STATE IMAGING ELEMENT - An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit drives the solid state imaging element so that the connecting portion and the potential barrier portion are set to a same potential by injecting charges into the connecting portion.01-07-2010
20100002106WIDE DYNAMIC RANGE IMAGING SENSOR AND METHOD - A system and method for sensing an optical input having a wide dynamic range includes providing a semiconductor material extending along a reference axis away from an optical input surface and having more than one substantially planar photodetecting regions disposed therein at different respective depths. The substantially planar photodetecting regions are configured to be overlapping and at least partially transverse to the reference axis, such that more than one of the regions absorb the optical input received through the optical input surface. Each of the photodetecting regions has an associated responsivity representative of the absorption of the incident optical signal. Preferably, the responsivity of each of the photodetecting regions is different for each of the photodetecting regions. A wide dynamic range sensor signal is produced by combining electrical output signals obtained from each of the more than one photodetecting regions.01-07-2010
20100182469IMAGE SENSOR - The present invention relates to an image sensor capable of obtaining a good-quality image with a simple configuration.07-22-2010
20100259657IMAGE SENSOR MODULE - An image sensor module is presented which includes a semiconductor chip, a holder and a coupling member. The semiconductor chip has a semiconductor chip body; an image sensing section over the semiconductor chip body; and bonding pads on the semiconductor chip body. The holder is mounted over the semiconductor chip and has an insulation section over the semiconductor chip body; connection patterns on the insulation section which are electrically coupled to the bonding pads; and a transparent cover over the image sensing section which is connected to the insulation section. The coupling member is interposed between the holder and the semiconductor chip for coupling together the holder to the semiconductor chip.10-14-2010
20090046184IMAGE SENSOR - An image sensor includes a base an image sensor chip, and a cooling element. The base includes an opening disposed in the base. The image sensor chip is connected electrically to the base and covers the opening. The cooling element is received in the opening and is connected thermally to the image sensor chip. Heat produced by the image sensor chip can be dissipated in time by the cooling elements in the image sensor. The cooling elements maintain the image sensor chip works under a temperature no more than the rated working temperature of the image sensor chip and therefore extend the life of the image sensor, and improve the image quality of the image sensor chip.02-19-2009
20090046185IMAGE PICKUP APPARATUS AND SIGNAL PROCESSING METHOD - An image pickup apparatus includes: a solid-state image sensing device that includes a plurality of pixels, each of the pixels including: a photoelectric conversion film; and a photoelectric conversion element that is formed in the semiconductor substrate below the photoelectric conversion film, are made up of at least three types of photoelectric conversion elements for detecting light in different wave ranges, of visible light, and absorbs light in a wave range different from the wave ranges detected in the at least three types of photoelectric conversion elements and generates a charge responsive to the absorbed light, the image pickup apparatus further including: a monochrome image data generation unit; a color image data generation unit; and a record image data generation unit.02-19-2009
20110234870IMAGING APPARATUS FOR FULLY AUTOMATIC SCREEN PRINTER - An imaging apparatus for fully automatic screen printer including two stacked light sources, two stacked beamsplitters, two stacked optical reflectors, two stacked imaging lens and two stacked image sensors, wherein the two stacked optical reflectors and the two stacked light sources are correspondingly disposed on two different sides of the two beamsplitters, the two stacked imaging lens are disposed on another side of the beamsplitters different from that of the optical reflectors and the light sources, the two stacked image sensors are disposed behind the imaging lens; the optical reflectors are provided with an upward reflection plane and a downward reflection plane, the optical axes of the imaging lenses are orthogonal to that of the light sources. The imaging apparatus is of two independent optical paths which capture the image of the printed circuit board and that of the screen respectively. Furthermore, the imaging apparatus is of compact structure, high acquiring speed and optical paths easy to be adjusted.09-29-2011
20100214457Solid-state imaging device, manufacturing method thereof, and imaging apparatus - A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.08-26-2010
20100188537SOLID-STATE IMAGING DEVICE - Light-splitting elements are arranged in at least two columns and two rows to form two pairs 07-29-2010
20100188538SOLID-STATE IMAGE SENSOR AND DRIVE METHOD FOR THE SAME - An independent pixel output line (07-29-2010
20130215300IMAGE PICKUP DEVICE - The present invention includes a photoelectric conversion unit, an amplifying element, a signal holding portion, and a charge transfer portion. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. The signal holding portion includes a first-conductivity-type third semiconductor region and a control electrode disposed above the third semiconductor region via an insulator film. The second semiconductor region has a plurality of regions disposed at different depths. The plurality of regions has a first region that forms a PN junction with the first semiconductor region, a second region disposed at a position deeper than the first region, and a third region disposed between the first region and the second region. The impurity concentration peak P08-22-2013
20090295953IMAGE SENSOR WITH FOCUSING INTERCONNECTION - An image sensor includes a photosensitive region formed in a substrate of an integrated circuit. The substrate has a first layer of metal formed over the surface of the substrate so the first layer of metal defines a first aperture that has a first aperture width through with the incident light passes before illuminating the photosensitive region. The first aperture width is equal to or less than the width of the photosensitive region below the first aperture. The substrate also has a second layer of metal formed over the first layer of metal. The second aperture has a second aperture width that is wider than the first aperture width. The first and second apertures focus the incident light onto the photosensitive region.12-03-2009
20100177223Solid-state imaging device and camera - A solid-state imaging device includes: an avalanche photodiode having a structure including an n07-15-2010
20090160983Method and apparatus providing light traps for optical crosstalk reduction - An imager having layers of light trapping material to reduce optical crosstalk and a method of forming the same.06-25-2009
20100231766IMAGING DEVICE - An imaging device includes an image sensing device provided on a semiconductor substrate; a transparent member provided on a light-receiving area of the image sensing device; and a circuit element provided on the transparent member, wherein the image sensing device and the circuit element are electrically coupled to each other.09-16-2010
20100253821Solid state imaging device, imaging apparatus, electronic apparatus, AD converter, and AD conversion method - A solid state imaging device includes: an AD conversion section having a comparing section, which receives a reference signal from a predetermined reference signal generating section and which compares the reference signal with an analog signal to be processed, and a counter section, which receives a count clock for AD conversion and performs a count operation on the basis of a comparison result of the comparing section, and acquiring digital data of the signal on the basis of output data of the counter section; a count operation period control section controlling an operation period of the counter section on the basis of the comparison result; and a driving control section controlling the reference signal generating section and the AD conversion section such that for the signal to be processed, data of upper N−M bits is acquired in first processing and data of lower M bits is acquired in second processing.10-07-2010
20100253822Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus - A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an insulating layer formed on the first electrode; and a second electrode formed on a planar surface of the first electrode via the insulating layer, wherein the second electrode is formed within the active region and within the first electrode in a planar layout.10-07-2010
20100141815SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME - A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained.06-10-2010
20110058079IMAGING DEVICE AND DRIVING METHOD THEREOF - There is provided an imaging device which eliminates complexity in reading an image in low resolution and reading an image in high resolution and realizes prevention of decrease in frame rate. The device includes a pixel region including a plurality of pixel elements and imaging an incident light of an object as an image and a reading unit for thinning out a pixel element from the pixel region to read a thinned out image in low resolution and reading a partial image in resolution higher than the thinned out image from a partial region of the pixel region (a horizontal shift register and a vertical shift register), wherein the reading unit reads the thinned out image and the partial image from mutually different pixel elements and reads the thinned out image and the partial image as different imaging frames.03-10-2011
20110058078PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device may include a plurality of A/D converters each of which receives a pixel signal from a pixel array that includes pixels arranged two-dimensionally. Each of the pixels may have a photoelectric conversion element. The pixel array may output the pixel signal in accordance with an incident light amount to the photoelectric conversion element. The plurality of A/D converters may convert the pixel signal to a digital value based on a reference voltage. The plurality of A/D converters may output the digital value. A reference voltage wire, which supplies the reference voltage to each of the plurality of A/D converters, may be branched into a plurality of branched reference voltage wires each of which is corresponding to one of the plurality of A/D converters. Each of the plurality of branched reference voltage wires may be connected only to constituent components in a corresponding A/D converter.03-10-2011
20110058076SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device includes: a light receiving portion and a transfer channel formed in a semiconductor substrate; a transfer electrode formed on the transfer channel; an anti-reflection film formed on the light receiving portion; and a light shielding film which covers the transfer electrode, and is in contact with a side surface of the anti-reflection film. An upper surface of the light shielding film at a contact between the light shielding film and a side surface of the anti-reflection film is located below an upper surface of the light shielding film on the transfer electrode.03-10-2011
20100253823IMAGE SENSOR AND IMAGE SENSOR MODULE - An image sensor includes a pulse input and output circuit that identifies a line synchronization pulse and an output start timing pulse sequentially input from an outside of a sensor chip, inputs the identified line synchronization pulse to an inside of the sensor chip and outputs the line synchronization pulse to an outside of the sensor chip, inputs the identified output start timing pulse to the inside of the sensor chip, and outputs an output start timing pulse, which is output from the input of the sensor chip after elapse of a fixed time from the input, to the outside of the sensor chip following the line synchronization pulse output to the outside.10-07-2010
20090002531Solid-state imaging device and camera module - A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and a light-blocking side wall. The plurality of arrayed pixels each includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is provided for blocking infrared light and formed facing toward a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The light-blocking side wall is formed on a lateral wall of the optical inner filter layer.01-01-2009
20090002530APPARATUS AND METHOD FOR PROCESSING IMAGES - The mixing of high-gain and low-gain outputs of a wide dynamic range image sensor uses relationship parameter estimation according to linear regression; and the mixed output is adaptively filtered for noise gap reduction.01-01-2009
20100033609SOLID STATE IMAGING DEVICE - To obtain a solid state imaging device having a data transfer function capable of outputting digital data after A/D conversion to the outside in a high speed.02-11-2010
20120194714SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes a semiconductor region including a plurality of photoelectric converters from which signals are allowed to be independently read out; a first microlens; and a second microlens which is arranged between the first microlens and the semiconductor region, wherein the second microlens includes a central portion and a peripheral portion that surrounds the central portion, and a power of the peripheral portion is a positive value and larger than a power of the central portion.08-02-2012
20120194713FREQUENCY SELECTIVE IMAGING SYSTEM - An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).08-02-2012
20090237534ANALOG-TO-DIGITAL CONVERTER, SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA SYSTEM - An analog-to-digital converter converting an analog input signal into a digital signal includes a comparator comparing a reference signal with an input signal and, if the reference signal matches the input signal, inverting an output; and a counter counting a comparison time. The counter includes flip flops that perform serial input/output. An input and an output of the counter are interconnected. The counter operates in a counter mode and a shift register mode. In the counter mode, a data output of each flip flop is supplied to a clock input of the next flip flop, and, if the output of the comparator is at a predetermined level, the counter functions as a counter synchronized with a counter clock signal. In the shift register mode, the flip flops are cascade-connected, and the counter functions as a shift register synchronized with a shift register clock signal.09-24-2009
20090040348IMAGING APPARATUS AND RADIATION IMAGING SYSTEM - The present invention aims to provide an imaging apparatus capable of reducing image unevenness even if a protective layer including a polarized solvent is used. The imaging apparatus of the present invention includes a plurality of pixels each having a conversion element and a TFT connected to the conversion element, a protective layer disposed over the plurality of pixels, a plurality of bias lines each electrically connected to each of the conversion elements, and a plurality of signal lines each electrically connected to each of the TFT. Then, the plurality of bias lines and the plurality of signal lines are alternately disposed at a predetermined interval within a region in the protective layer. Then, the plurality of bias lines is commonly connected through a connecting wiring on the outside of the region in the protective layer, and the connecting wiring is disposed to cross the plurality of signal lines.02-12-2009
20090040346SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS AND DRIVING METHOD FOR THE SAME - A solid-state imaging device includes first-group pixels 02-12-2009
20090040347PHOTOGRAPHIC APPARATUS - A photographic apparatus comprises an imaging sensor, an image-processing unit, and a display unit. The imaging sensor obtains image data. The image-processing unit performs an image-processing operation on the image data. The display unit displays an image-processing setting picture having a setting-status indication area that shows a setting status of the image-processing operation, and having a color status indication area that displays a diagrammatic representation of a color status in the image-processing operation corresponding to the setting status. The setting-status indication area shows hue in the image-processing operation, as the setting status. The color status indication area has a figure that shows saturations of a plurality of color components in the image-processing operation in order to display the diagrammatic representation of the color status. The figure is rotated according to said hue. A shape of the figure and a size of the figure change in accordance with the saturations.02-12-2009
20090322918IMAGING APPARATUS AND CAMERA - An imaging apparatus having a function of enabling focus detection at high speed while exposing an image sensor to light. Imaging apparatus 12-31-2009
20090073292METHOD FOR ACQUIRING A DIGITAL IMAGE WITH A LARGE DYNAMIC RANGE WITH A SENSOR OF LESSER DYNAMIC RANGE - A method is provided for obtaining an image with a large dynamic range. An image is acquired such that each image pixel is represented by a plurality of values obtained at the same time but for different integration levels (effective exposures). For each pixel, a representative value is selected among those available, such that it is neither saturated nor blackened.03-19-2009
20080284882SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME - A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.11-20-2008
20130128084APPARATUS FOR AND METHOD OF IMAGING TARGETS WITH WIDE ANGLE, ATHERMALIZED, ACHROMATIC, HYBRID IMAGING LENS ASSEMBLY - A wide angle, athermalized, achromatic, hybrid imaging lens assembly captures return light from a target over a field of view, and projects the captured return light onto an array of image sensors of a solid-state imager during electro-optical reading of the target. The assembly includes a plastic lens group for optical aberration compensation, a glass lens group spaced away from the plastic lens group along an optical axis, and an aperture stop between the lens groups and having an aperture through which the optical axis extends. The glass lens group has substantially all the optical power of the imaging lens assembly for thermal stability, and the plastic lens group has substantially no optical power. A holder holds the lenses and the aperture stop in front of the array.05-23-2013
20090115876SOLID-STATE IMAGING APPARATUS, DRIVING METHOD THEREOF, CAMERA, AND COPIER - A solid-state imaging apparatus includes a plurality of unit cells, each including a plurality of pixels having mutually different color components and a first selecting unit outputting one of the signals from the plurality of pixels selectively. The unit cells are classified into groups. The solid-state imaging apparatus further includes holding units, each provided to each of the unit cells and holding the signal output from the first selecting unit, a plurality of common output lines for outputting signals of mutually different color components, and second selecting units, each selecting one of the plurality of common output lines to output the signals held in the holding unit to the selected common output line. The first selecting units severally output a signal of a different color component from each of the unit cell groups.05-07-2009
20090115875IMAGE SENSOR MODULE AND FABRICATION METHOD THEREOF - An image sensor module having a sensor chip closely adhered on a concave surface and a fabrication method thereof are disclosed. The image sensor module includes at least one sensor chip, at least one sensor chip-mounting structure comprising a substrate and a polymer layer formed on the substrate, the polymer layer having an concave surface formed on an upper part thereof by a polymer molding method, so that the sensor chip is bent and bonded on the concave surface, and at least one lens fixed on the at least one sensor chip-mounting structure above the sensor chip.05-07-2009
20090316028Methods and apparatus for reducing color material related defects in imagers - A film is used on the surface of a color filter array to keep tiny particles that remain on the surface so that they do not interfere during subsequent processing steps. The particles may be the result of forming the color filter array or other structures. The film can prevent the formation of particle clusters in an imager.12-24-2009
20110032401Solid-state imaging device, method of driving solid-state imaging device, and imaging apparatus - A solid-state imaging device includes: a pixel unit in which a plurality of photoelectric conversion elements are arranged; a comparison unit comparing a reference signal with a signal acquired by the photoelectric conversion element of the pixel unit; a reference signal generating unit generating the reference signal; a counting unit counting an amount of time when the relative magnitude of the pixel signal and the reference signal is inverted by the comparison unit; and an offset setting unit setting an offset in the reference signal generated by the reference signal generating unit.02-10-2011
20110032402ZOOM LENS AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A zoom lens includes, from an object side to an image side, first to fifth lens units having positive, negative, positive, negative, and positive refractive powers. A distance between the first and second lens units is longer, a distance between the second and third lens units is shorter, and a distance between the fourth and fifth lens units is longer at a telephoto end than at a wide angle end, and a distance between the third and fourth lens units differs between the telephoto end and the wide angle end. Focal lengths of the first and fourth lens units and the entire zoom lens at the wide angle end, a moving amount of the first lens unit during zooming, and a distance from a lens surface closest to the object side in the first lens unit to an image plane at the wide angle end are set properly.02-10-2011
20110032399DOUBLE-LIGHT SOURCES OPTICAL SCANNING DEVICE AND METHOD OF USING THE SAME - A double-light sources optical scanning device and method of using the same is disclosed. The double-light sources optical scanning device comprises: a light-source backlight module, an optical lens, and an area optical sensing device. The light-source backlight module comprising a white light source and an infrared light source, irradiating at least an object for scanning to generate an image. The optical lens projects the image to the area optical sensing device and divides the image generated by the white light source and the infrared light source. Turning on the white light source or the infrared light source through a switching control circuit, wherein determining where the contaminative positions are placed on the object by irradiating with infrared, and cleaning and repairing contaminations and damages shown in the image generated by the white light source.02-10-2011
20110032398IMAGE SENSOR WITH MULTILAYER INTERFERENCE FILTERS - Image sensors are provided for electronic imaging devices. An image sensor can be formed from an array of image pixels. Bragg-type multilayer interference filters can be formed for the image sensor using dielectric layers with alternating high and low indices of refraction. The multilayer interference filters can be configured to form band-pass filters of desired colors and infrared-blocking filters. Dielectric layers with non-flat bulk absorption properties may be used to tune the absorption of the filters. The interference filters may be provided in a uniform pattern so that an image sensor exhibits a monochrome response or may be arranged in a multicolor color filter array pattern such as a Bayer pattern.02-10-2011
20080309805IMAGE SENSOR PACKAGE - An image sensor package includes a printed circuit board (PCB) with a plurality of signal input pads disposed on an upper surface thereof, an image sensor chip, a frame layer, a transparent layer, a plurality of wires and glue. The image sensor chip includes a photosensitive region formed on a top surface thereof, a plurality of bonding pads formed on the periphery thereof, and a carrying region formed between the photosensitive region and the bonding pads. The glue covers a space formed between the PCB, the image sensor chip and the frame layer, for sealing the bonding pads, the input pads and the wires. The frame layer defines a base adhered to the corresponding carrying region and a window corresponding to the photosensitive region. The transparent layer is adhered to cover the window of the frame layer to seal the photosensitive region of the image sensor chip.12-18-2008
20080309806IMAGING SYSTEM, IMAGE SENSOR, AND METHOD OF CONTROLLING IMAGING SYSTEM - An imaging system includes an image sensor and a mechanical shutter which controls the termination of exposure of the image sensor. The image sensor includes a pixel array in which a plurality of pixels are arrayed in a matrix, and a vertical scanning unit which scans the pixel array for each row. The vertical scanning unit parallelly executes some of the reset operations of pixels on at least two adjacent rows of the pixel array. The charge accumulation operation of pixels starts upon completion of the reset operation and terminates in response to light shielding by the mechanical shutter.12-18-2008
20090109308PHYSICAL QUANTITY DISTRIBUTION DETECTOR, PHYSICAL INFORMATION ACQUIRING METHOD, AND PHYSICAL INFORMATION ACQUIRING DEVICE - A physical information acquiring method of acquiring physical information for a predetermined purpose on the basis of change information that is acquired under predetermined detection conditions for a physical quantity using an portion for physical quantity distribution detection. The portion for physical quantity distribution detection includes a detector that detects change information corresponding to a change in a physical quantity made incident on the detector and has unit components that output unit signals based on the change information detected by the detector arranged in a predetermined order. In the physical information acquiring method, a carrier signal is converted into a signal related to a frequency on the basis of the change information detected by the detector. The physical information for a predetermined purpose is acquired using the signal related to a frequency.04-30-2009
20090109307SOLID-STATE IMAGING DEVICE FOR COLOR IMAGING - A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.04-30-2009
20110128423IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a plurality of color sensors, a plurality of depth sensors, a near-infrared cut filter, a color filter, a pass filter and a rejection filter. The color sensors and depth sensors are formed on a substrate. The near-infrared cut filter and the color filter are formed on the color sensors. The pass filter is formed on the depth sensors, and is adapted to transmit light having a wavelength longer than an upper limit of a visible light wavelength. The pass filter has a multi-layer structure wherein a semiconductor material and a semiconductor oxide material are alternately stacked. The rejection filter is formed over the near-infrared cut filter, the color filter and the pass filter, and is adapted to transmit light having a wavelength shorter than an upper limit of a near-infrared light wavelength.06-02-2011
20100302419IMAGE SENSOR WITH PHOTOSENSITIVE THIN FILM TRANSISTORS AND DARK CURRENT COMPENSATION - An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes and source electrodes independently biased to reduce the effects of dark current. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. The photo TFT may be disposed above the storage capacitor to increase the exposed surface area of the photo TFT.12-02-2010
20110122305DIFFRACTIVE OPTICAL ELEMENT, OPTICAL SYSTEM INCLUDING THE SAME, AND IMAGE PICKUP APPARATUS - A diffractive optical element includes multiple diffraction gratings laminated and made of at least three material types, wherein the multiple diffraction gratings include: a first combination part including two diffraction gratings of materials different from each other in which grating side surfaces of grating parts contact with each other or are disposed close to each other in a grating pitch direction; and a second combination part including two diffraction gratings of materials different from each other in which at least one material is different from the materials of the first combination part; and when N1Aw and N1Bw denote refractive indices of the first combination part at a wavelength (w), ν1A and ν1B denote Abbe numbers, N2Ad and N2Bd denote refractive indices of the second combination part on a d-line, ν2A and ν2B denote Abbe numbers, the wavelength (w) is 37005-26-2011
20110122304METHODS OF ACQUIRING IMAGES - Example embodiments are directed to time division of an exposure for image acquisition. More specifically, example embodiments reduce flicker in images taken with an image sensor, such as a CMOS image sensor. At least one example embodiment discloses a method of acquiring an image with an image sensor. The method includes determining, by a controller of the image sensor, an exposure time for image acquisition and dividing, by the controller, the exposure time into at least two active time intervals. The at least two active time intervals are separated by at least one inactive time interval.05-26-2011
20110122303SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING THE SAME, AND CAMERA MODULE - Image quality degradation due to external light irradiated to an edge section of a transparent cover of a solid-state imaging device and external light propagating in the cover is prevented with a simple structure.05-26-2011
20100315540A/D converter, solid-state image capturing apparatus and electronic information device - The CMOS image sensor according to the present invention includes a sample hold section 12-16-2010
20100315541SOLID-STATE IMAGING DEVICE INCLUDING IMAGE SENSOR - According to one embodiment, a solid-state imaging device includes a sensor unit, a resolution extraction circuit and a generation circuit. The sensor unit has a transparent (W) filter and color filters of at least two colors which separate wavelengths of light components that have passed through an optical lens having at least one of spherical aberration and chromatic aberration. The sensor unit converts light that has passed through the transparent filter into a signal W and converts light components that have passed through the color filters into at least first and second color signals. The resolution extraction circuit extracts a resolution signal from signal W converted by the sensor unit. The generation circuit generates red (R), green (G) and blue (B) signals from signal W and the first and second color signals converted by the sensor unit.12-16-2010
20110001856IMAGE SENSOR - An image sensor comprising a plurality of first pixels is provided. The pixels comprise photoelectric converters and first optical members. The first optical member covers the photoelectric converter. Light incident on the photoelectric converter passes through the first optical member. The first pixels are arranged on a light-receiving area. First differences are created for the thicknesses of the first optical members in two of the first pixels in a part of first pixel pairs among all first pixel pairs. The first pixel pair includes two of the first pixels selected from the plurality of said first pixels.01-06-2011
20110242377SIGNAL PROCESSING METHOD AND SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device reads repeatedly M times an analog signal having a black level, during a first A/D conversion period. A frequency divider frequency-divides by M a pulse train depending on the analog signal having a black level that is read repeatedly M times, and a counter circuit counts the pulses of the pulse train, which is frequency-divided by M. Thereafter, the solid-state image sensing device reads repeatedly N times an analog signal having a signal level, during a second A/D conversion period. The frequency divider frequency-divides by N a pulse train depending on the analog signal having a signal level that is read repeatedly N times, and the counter circuit counts the pulses of the pulse train, which is frequency-divided by N. M and N satisfy the relationship N≦M.10-06-2011
20110007193SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD FOR THE SAME - A solid-state imaging apparatus includes: a plurality of pixels generating pixel signals; color filters above the photoelectric conversion elements; a row selecting unit for selecting a plurality of rows of the pixels; a signal line receiving the pixel signal from the pixels of the row selected by the row selecting unit; a plurality of capacitors for accumulating the pixel signal outputted to the signal line; and a plurality of selecting switches connected between the signal line and the plurality of capacitors. During a first adding operation, the row selecting unit adds pixel signals accumulated in a part of the capacitors on the signal line. And, during a second adding operation, the row selecting unit adds pixel signals accumulated in other part of the capacitors with the pixel signals from the pixels of a row different from the row of which pixel signals are added in the first adding operation.01-13-2011
20090066822Image Sensor and Method for Manufacturing the Same - Provided is an image sensor. The image sensor comprises a first substrate, and an image sensing device on the first substrate. The first substrate includes an interconnection and a readout circuitry. The image sensing device is formed on the interconnection. A top electrode is provided on the image sensing device such that reverse bias can be applied to the top side of the image sensing device.03-12-2009
20110025896DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row.02-03-2011
20110025893Single gate pixel and operation method of single gate pixel - A single gate pixel of an image sensor, architecture of the single gate pixel, and an operation method of the single gate pixel may be provided. The single gate pixel includes a first transfer unit to transfer a charge, generated by a light detector element, to an accumulation (ACC) node, a second transfer unit to transfer the charge, accumulated in the ACC node, to a Floating Diffusion (FD) node, a connection unit to connect the light detector element to a driving voltage, and a reset unit to reset a voltage of the FD node based on a reset control signal.02-03-2011
20110025894SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions configured to be formed on the imaging surface of a semiconductor substrate, an element isolation portion in which an impurity diffusion region is formed so as to isolate the plurality of photoelectric conversion portions on the imaging surface, a light shielding portion configured to stop incident light from entering the element isolation portion on the imaging surface, and a plurality of pixel transistors configured to be formed on the imaging surface and to read out and output signal charge, generated in the plurality of photoelectric conversion portions, as data signals, wherein the light shielding portion includes an extending portion extending among the plurality of photoelectric conversion portions and is formed so that the extending portion of the light shielding portion and each of the gate electrodes of the pixel transistor are connected to each other.02-03-2011
20110043672IMAGING MODULE - An imaging module includes an imaging element provided with an external terminal that is disposed at an end of the front surface on which a light-receiving surface is formed and also includes a substrate on which the imaging element is mounted. On the back surface of the imaging element, an external connecting electrode that is electrically connected to the external terminal is disposed. On the main surface of the substrate, an imaging element connecting electrode is disposed at a position opposing the external connecting electrode. The external connecting electrode is connected to the imaging element connecting electrode.02-24-2011
20110043673IMAGE SENSOR AND A CONFIGURATION FOR IMPROVED SKEW TIME - A method of providing a signal to a plurality of signal destinations configured in a planar array, the method comprising: electrically connecting all the signal destinations with at least one conducting element; and providing the signal substantially simultaneously to signal destinations substantially along the perimeter of the planar array and along diagonals of a rectangle.02-24-2011
20100171855METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING DEVICE - The present invention has an object of providing a method for driving a solid-state imaging device which includes photodiodes 07-08-2010
20100149390STAGGERED RESET IN CMOS DIGITAL SENSOR DEVICE - Systems and methods are provided that facilitate staggering resets of rows of pixels in a CMOS imaging iSoC sensor. Reset signals and select signals can be provided to pixels in a pixel array in a coordinated manner when employing full frame integration or sub-frame integration. Further, reset signals and select signals can be transferred to a first row of pixels, while reset signals can be transferred to a second row of pixels during a unique readout time interval when utilizing sub-frame integration. Within the unique readout time interval, reset signals can be transferred to the first row of pixels during a first time period, while reset signals can be transferred to the second row of pixels during a second time period, where the first and second time periods are non-overlapping. Accordingly, cross-talk between rows of pixels during reset can be mitigated, which leads to enhanced uniformity.06-17-2010
20100013968Image sensor module embedded in mobile phone and method of manufacturing the same - Disclosed herein is an image sensor module embedded in a mobile phone and a method of manufacturing the same, in which a device is mounted on an image sensor chip to miniaturize the resulting product, thus enabling cost savings and enhancing product competitiveness.01-21-2010
20100013970Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof - A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.01-21-2010
20110085065SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes, a pixel section, a read pulse amplitude control unit which controls exposure time for which a photo diode carries out the photoelectric conversion and dividing the signal charge accumulated in the photo diode into fractions so that the fractions are read from the photo diode, a plurality of line memories to which the plurality of read signals are saved. And the device further includes an addition unit which synthesizes the plurality of read signals into one signal, the addition unit includes first determination unit which reads the signal saved to the predetermined line memory and comparing a signal level of the read signal with a predetermined level to determine whether or not to add a signal read from a different line memory to the compared signal.04-14-2011
20090244341ACTIVE PIXEL SENSOR (APS) READOUT STRUCTURE WITH AMPLIFICATION - An active pixel sensor (APS) includes an array of individually addressable APS cells ad a pixel readout structure that includes an amplifier. The amplifier may have a two-branched structure and provide a gain of one or higher. Additional switches may be provided in the pixels to provide protection for pixel output transistors from voltage changes in the column line. Structure may also be provided for optional gain selection in the amplifier.10-01-2009
20090244339IMAGE CAPTURING APPARATUS AND IMAGE CAPTURING METHOD - Provided is an image capturing apparatus comprising a plurality of first light receiving elements that are arranged on substantially the same plane and that each receive light of a first color component from a subject; a plurality of second light receiving elements that are arranged on substantially the same plane and with a higher surface density than the plurality of first light receiving elements, and that each receive light of a second color component from the subject; and a polarizing section that blocks polarized light components from the subject except for a first polarized light component so that first-polarized-light receiving elements, which are a portion of the plurality of second light receiving elements, receive the first polarized light component from the subject, the first-polarized-light receiving elements transmitting the light from the subject to be received by the plurality of first light receiving elements.10-01-2009
20090322919SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a photoelectric conversion portion; a floating diffusion region; a transfer gate electrode made of an n-type semiconductor; a sidewall made of an n-type semiconductor formed on the photoelectric conversion portion side of the transfer gate electrode through an insulating film; and a sidewall made of an insulating layer formed on the floating diffusion region side of the transfer gate electrode.12-31-2009
20100013969Solid-state imaging element and camera system - Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel.01-21-2010
20110176041SOLID-STATE IMAGING DEVICE AND CAMERA - A camera with a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.07-21-2011
20100053389SIGNAL PROCESSING APPARATUS, SOLID-STATE IMAGING DEVICE, AND PIXEL SIGNAL GENERATING METHOD - To provide a floating diffusion (FD) for converting accumulated electric charges to a voltage signal and a transistor in which a gate terminal is connected to the FD and a source terminal is connected to an output signal line. When the FD is reset, a power supply voltage is applied to the FD for a predetermined period to set a voltage of the output signal line as a first voltage, and thereafter, the set voltage of the output signal line is set as a second voltage higher than the first voltage.03-04-2010
20100060759SOLID-STATE IMAGING APPARATUS - The present invention is a solid-state imaging apparatus having a plurality of signal accumulating units for accumulating signals from a plurality of pixels each including a photoelectric conversion element, a common signal transferring unit for transferring a signal outputted from the signal accumulating unit, a plurality of reset units for resetting a potential of a signal path of the common signal transferring unit, a horizontal scanning unit for outputting, to the common signal transferring unit, the signal accumulated in the plurality of signal accumulating units, and a plurality of reset controlling units for controlling the reset units, wherein the horizontal scanning unit includes a plurality of horizontal scanning blocks, an operation of the horizontal scanning unit is controlled by a reference pulse supplied to the horizontal scanning block, and the reset controlling unit is arranged in the horizontal scanning block.03-11-2010
20120242876SOLID-STATE IMAGE SENSING DEVICE, CAMERA MODULE, AND SOLID-STATE IMAGE SENSING DEVICE MANUFACTURING METHOD - According to one embodiment, a solid-state image sensing device includes a semiconductor substrate which includes a first surface and a second surface opposite to the first surface, a pixel which is provided in the semiconductor substrate and which photoelectrically converts light emitted via a lens on the second surface, a support substrate which is provided on a first insulating layer covering an element on the first surface and which includes a trench, and a first device which is provided on the first insulating layer and which is accommodated in the trench of the support substrate.09-27-2012
20120242874SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device which includes a pixel region which is provided on a semiconductor substrate, and in which a plurality of pixels including a photoelectric conversion unit having a photoelectric conversion function is arranged, a wiring layer which is provided at one plate surface of the semiconductor substrate, a color filter layer which is divided into a plurality of color filters provided corresponding to each pixel of the plurality of pixels which is arranged in the pixel region, and an inter-pixel light shielding unit which is provided in a boundary portion between the pixels adjacent to each other, between the semiconductor substrate and the color filter layer.09-27-2012
20100053393SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE - A solid-state image sensor includes: a photoelectric conversion section; a floating gate provided above a semiconductor substrate; a first transistor for accumulating charge generated in said photoelectric conversion section into said floating gate; and a second transistor for reading a signal corresponding to the charge accumulated in said floating gate. In an oxide film formed between said floating gate and said semiconductor substrate, at least a part of said oxide film in a region overlapping with the gate electrode of said first transistor is formed thinner than said oxide film in a region overlapping with the gate electrode of said second transistor.03-04-2010
20100053388SOLID-STATE IMAGING DEVICE - A solid-state image pickup device comprising: a multilayer wiring board 03-04-2010
20100053391MINIATURIZED IMAGE CAPTURING DEVICE AND METHOD FOR ASSEMBLING THE SAME - A miniaturized image capturing device comprises: a lens base, which has a first open and a second open; at least one light source, which is disposed on a first PCB and around the periphery of the first open; at least one lens, which is accommodated in the lens base and close to the first open; a lens holder, which is accommodated in the lens base for holding the lens; at least one image sensor, which is accommodated in the lens base and close to the second open, the image sensor having an imaging region therein; and a PCB, which is electrically connected to the image sensor through a plurality of sensor signal pads.03-04-2010
20100053390IMAGE SENSOR AND IMAGING APPARATUS - An image sensor includes a pixel array with a plurality of pixels, wherein each of the plurality of pixels includes: a photoelectric conversion unit; and a waveguide structure in which a side face of a substance that has a higher refractive index than a refractive index of a plurality of insulation films is surrounded by the plurality of insulation films so that light is guided to the photoelectric conversion unit, and wherein an insulation film that surrounds a region where the light is concentrated of the side face of the substance has the lowest refractive index among the plurality of insulation films.03-04-2010
20110176039DIGITAL CAMERA AND OPERATING METHOD THEREOF - A digital camera and an operating method thereof are disclosed. The digital camera includes an image sensing module, a display, an operating element, and a control module. The image sensing module consists of N pieces of image sensing elements. The display is used to show a first image. The operating element is used by a user to select a specific area in the first image and set correction parameters for the specific area. The control module is connected to the image sensing module and the display for obtaining information about a position of the specific area relative to the first image and the correction parameters, and uses the obtained position information and the correction parameters to control M pieces of the image sensing elements in the image sensing module corresponding to the specific area, so that a second image is obtained based on the correction parameters.07-21-2011
20110176042SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING THE SAME, AND CAMERA SYSTEM - Provided is a solid-state imaging element including pixel signal read lines, and a pixel signal reading unit for reading pixel signals from a pixel unit via the pixel signal read line. The pixel unit includes a plurality of pixels arranged in a matrix form, each pixel including a photoelectric conversion element. In the pixel unit, a shared pixel in which an output node is shared among a plurality of pixels is formed, and a pixel signal of each pixel in the shared pixel is capable of being selectively output from the shared output node to a corresponding one of the pixel signal read lines. The pixel signal reading unit sets a bias voltage for a load element which is connected to the pixel signal read line and in which current dependent on a bias voltage flows in the load element, to a voltage causing a current value to be higher than current upon a reference bias voltage when there is no difference between added charge amounts, when addition of pixel signals of the respective pixels in the shared pixel is driven.07-21-2011
20110176040IMAGE SENSING APPARATUS AND CONTROL METHOD THEREFOR - An image sensing apparatus includes an image sensing unit that performs image sensing by converting incoming light into electrical signals, a control unit that controls driving of the image sensing unit so as to read out the electrical signals by each area of a plurality of areas of the image sensing unit, and a signal processing unit that processes the electrical signals read out by each of the plurality of areas. The control unit varies a horizontal cycle that drives the image sensing unit for each of the plurality of areas.07-21-2011
20110176037Electronic Imager Using an Impedance Sensor Grid Array and Method of Making - An novel impedance sensor is provided having a plurality of substantially parallel drive lines configured to transmit a signal into a surface of a proximally located object, and also a plurality of substantially parallel pickup lines oriented substantially perpendicular to the drive lines and separated from the pickup lines by a dielectric to form intrinsic electrode pairs that are impedance sensitive at each of the drive and pickup crossover locations.07-21-2011
20100134668Image sensors - An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.06-03-2010
20100134667Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus - A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.06-03-2010
20110249160INDIUM TIN OXIDE GATE CHARGE COUPLED DEVICE - An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.10-13-2011
20120120290IMAGE SENSING DEVICE AND METHOD FOR OPERATING THE SAME - An image sensing device includes, inter alia, a ramp signal generation unit generating a ramp signal that decreases during first and second periods for finding data values corresponding to a pixel signal and an offset value, respectively. The image sensing device also includes a comparison unit compares the pixel signal with the ramp signal during the first period, and compares the ramp signal with an internally generated offset value during the second period. A first counting unit is configured to perform a counting operation during the first period, and a second counting unit configured to latch a count value of the first counting unit as a data value in response to the result of the first comparison operation during the first period, perform a down-count operation from the latched data value in response to the result of the second comparison operation during the second period, and latch a counting result.05-17-2012
20090027530SOLID-STATE IMAGE PICK-UP DEVICE - A plurality of low-sensitivity pixels 01-29-2009
20090027529Image sensor with wide operating range - An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.01-29-2009
20090027528Solid-state image capturing apparatus and electric information device - A solid-state image capturing apparatus has a plurality of light receiving sections for performing photoelectric conversion on incident light to generate a signal charge, a charge transfer section provided along a light receiving section arranged in a column direction among the plurality of light receiving sections, for transferring signal charges generated in the light receiving section arranged in the column direction to a predetermined direction, and at least two layers of charge transfer electrodes provided on the charge transfer section via an insulation film, where a plane view width readable from the light receiving section is 50% to the whole edge of the edge of the light receiving section on the charge transfer section side.01-29-2009
20120147231PHOTOELECTRIC CONVERSION DEVICE AND CAMERA SYSTEM - A photoelectric conversion device includes a common output line, a sensor cell unit which outputs a signal to the common output line, a transfer circuit unit which is connected to the common output line, holds a signal from the common output line in a transfer capacitor, and transfers the signal, first, second and third memory cell units each of which stores a signal from the common output line in a memory capacitor, inverts and amplifies the signal in the memory capacitor, and outputs the signal to the common output line.06-14-2012
20120200751PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.08-09-2012
20110050968METHOD FOR OPTICALLY DETECTING MOVING OBJECTS - A process for the optical detection of objects moved at a conveying speed. The process comprises illuminating the object in a temporally consecutive manner with a sequence of at least two light pulses of different colors and taking images of the object during each light pulse with a monochromatic optical area sensor comprising many sensor lines. The process comprises reading out and temporarily storing at least as many lines of each image as there are different colors of the light pulses. The read-out lines have a line pitch relative to each other. Sequentially combining lines from images taken under illumination by different colors to form color lines, with the lines combined with each other having the aforesaid line pitch or a multiple thereof relative to each other when they are being read out, and assembling the color lines into an overall color picture.03-03-2011
20110249161SOLID-STATE IMAGING DEVICE - Provided is a solid-state imaging device which can carry out ranging with high precision even when the pixel size is small. The solid-state imaging device including a pixel includes: a photoelectric conversion unit for converting light into an electrical signal; an optical waveguide provided on an light incident side of the photoelectric conversion unit, the optical waveguide being configured so that light entering from a first direction is converted into a first waveguide mode and is guided and light entering from a second direction, which is different from the first direction, is converted into a second waveguide mode and is guided; and a light blocking member provided in the optical waveguide, for reducing more light in the second waveguide mode which is guided to the photoelectric conversion unit than light in the first waveguide mode which is guided to the photoelectric conversion unit.10-13-2011
20110019043SOLID-STATE IMAGING DEVICE, AND CAMERA - A solid-state imaging device includes: an imaging unit wherein a plurality of light sensing units formed in a matrix and a plurality of interconnections are formed among the plurality of light sensing units; a color filter that is disposed over the imaging unit, and delivers colors to the light sensing units in accordance with a predefined rule; and on-chip lenses that are disposed corresponding to the light sensing units on a one-by-one basis over the color filter, and have light-collection characteristics varying in accordance with differences among sensitivities of the light sensing units, where the differences among the sensitivities of the light sensing units are generated, when the same colors are delivered to the light sensing units in accordance with the same rule, owing to the fact that positions of the individual interconnections relative to the light sensing units vary periodically.01-27-2011
20110001857PHOTOGRAPHING MODULE - A photographing module is provided. The photographing module includes a lens unit including at least one lens; an imaging device which converts image light, transmitted through the lens unit, into an electrical signal; and a signal transmission member including a plurality of lead units which transmit the electrical signal to an outside, and a mold unit in which a groove which accommodates at least a portion of the imaging device is formed. At least one of the lead units includes a first lead terminal which is exposed at an inner portion of the groove and electrically connected to a terminal of the imaging device; a second lead terminal which has a different height from the first lead terminal and is exposed outside the signal transmission member; and a connection portion which connects the first lead terminal to the second lead terminal.01-06-2011
20100053392SOLID-STATE IMAGING DEVICE - The objective of this invention is to provide a solid-state imaging device and drive method with which sampling before the output values from pixels have reached a constant value can be avoided. The solid-state imaging device comprises photosensitive pixels arranged in the form of an array on a photosensitive surface and that have a photodiode that generates and stores a photocharge, a transfer transistor that transfers the photocharge, a floating diffusion to which the photocharge is transferred, and an amplifying transistor that converts the photocharge into a voltage signal and that amplifies the signal; photosensitive-surface output line connected to the source/drain of one of the amplifying transistors; power source connected thereto; sampling circuit connected to the photosensitive-surface output line; and current source regulating circuit, which regulates the current source current, connected to the current source so that, for sampling of the output values, the sampling circuit samples the output values after the output values have essentially become constant by comparing the output values immediately after they are output to the photosensitive-surface output lines.03-04-2010
20090278966IMAGE SENSOR AND IMAGING APPARATUS - An image sensor 11-12-2009
20080246866Solid-state image sensing device and electronic apparatus comprising same - A camera module 10-09-2008
20120033117SOLID-STATE IMAGING DEVICE AND DRIVING METHOD - A plurality of pixel circuits arranged in rows and columns, and each of which outputs an electric signal according to an amount of received light; a first column signal line provided for each of the columns, and for sequentially transferring the electric signals from said pixel circuits in a corresponding column; and a holding circuit provided for each of the pixel circuits in each column, and which holds the electric signal transferred through the column signal line in the corresponding column are provided. A holding circuit includes a first capacitor which holds a first electric signal of the corresponding pixel circuit in a reset state; and a second capacitor which holds a second electric signal after the corresponding pixel circuit receives light. A difference circuit calculates a difference between two electric signals held by the first capacitor and the second capacitor in a same holding circuit.02-09-2012
20120033116SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes first-color pixels and second-color pixels, each of the first-color pixels including a first antireflection film and a first color filter, and each of the second-color pixels including a second antireflection film and a second color filter, wherein the solid-state image sensor satisfies02-09-2012
20090128673Image Sensor - In this image sensor, a first spring member is so arranged that the urging direction of the first spring member is inclined with respect to the axis of a first rotating shaft of a first driving source thereby inclining a transmission member urged by the first spring member with respect to the axis of the first rotating shaft and bringing the transmission member into contact with a first pressing member engaging with the first rotating shaft, so that the first pressing member engages with the first rotating shaft while the axis of the first pressing member is inclined with respect to the axis of the first rotating shaft.05-21-2009
20080266432IMAGE PICKUP SYSTEM, IMAGE PROCESSING METHOD, AND COMPUTER PROGRAM PRODUCT - An image pickup system for processing a signal from a CCD includes a noise reducing unit for performing a noise reduction processing on the signal from the CCD, an edge direction detection unit for detecting an edge direction from the signal having been subjected to the noise reduction processing, and an edge extraction unit for extracting an edge component from the signal from the CCD on the basis of the edge direction.10-30-2008
20080211944Imaging device, image recording/playback apparatus, and power supply control method for imaging device - An imaging device with a solid-states image sensor includes a recording/playback section that records a captured image signal on a recording medium and reads the recorded signal, a recording/playback control section that controls recording and playback operations of the recording/playback section, a monitor image processing section that generates a display image signal for monitor displaying on the basis of the captured image signal, a power supply section having power supply circuits for at least the above three sections, and a system control section that controls a power supply condition by selecting one of operation modes including a power save mode in which power is not supplied to the recording/playback section and the recording/playback control section performs minimum processing necessary for a recovery operation of the recording/playback section, while power is supplied to the monitor image processing section to generate the display image signal.09-04-2008
20080273104IMAGE SENSOR PIXEL WITH GAIN CONTROL - A method for reading out an image signal, the method comprising: providing at least two photosensitive regions; providing at least two transfer gates respectively associated with each photosensitive region; providing a common charge-to-voltage conversion region electrically connected to the transfer gates; providing a reset mechanism that resets the common charge-to-voltage conversion region; after transferring charge from at least one of the photo-sensitive regions, disabling all transfer gates at a first time; enabling at least one transfer gate at a subsequent second time; and transferring charge from at least one of the photosensitive regions at a subsequent third time while the at least one transfer gate from the second time remains enabled.11-06-2008
20080266433Solid-state imaging device - In a solid-state imaging device, bus lines are provided at both sides of an imaging area vertically to send vertical-transfer clock pulses to shunt wires disposed on or over the imaging area at both ends of the signal lines of the shunt wires. Bus lines disposed closer to a horizontal transfer register are placed at a boundary area of the imaging area and the horizontal transfer register. Since the bus lines pass through an upper layer of the boundary area, imaging performed by light receiving elements is not performed but dummy pixels having almost the same structure as the light receiving sections are disposed and vertical transfer registers are provided in the boundary area to just transfer signal charges by the vertical transfer registers with a characteristic similar to that in the imaging area to the horizontal transfer register.10-30-2008
20080266431SENSOR - A sensor includes a first pixel for measuring a distance to an object by detecting reflected light applied from a light source and reflected by the object, wherein the first pixel includes a first charge increasing portion for increasing signal charges stored in the first pixel by impact ionization.10-30-2008
20080259191Image Input Apparatus that Resolves Color Difference - A microcomputer outputs correction data. A shading correction circuit performs a shading correction to a digital image signal using the correction data outputted from the microcomputer. A YC processing circuit generates a video signal from the digital image signal having undergone the shading correction, performs processing such as a gamma correction to the generated video signal, and outputs the video signal having undergone the processing such as the gamma correction.10-23-2008
20100321547A/D CONVERSION APPARATUS, SOLID-STATE IMAGE CAPTURING APPARATUS AND ELECTRONIC INFORMATION DEVICE - An A/D conversion apparatus according to the present invention for comparing a reference signal with an analog signal, and when the reference signal matches with the analog signal, outputting a corresponding digital value, is provided, and the A/D conversion apparatus includes a gray code counter for generating the digital value from a reference clock or a reverse clock of the reference clock, and uses a gray code, in which a most significant bit to a second least significant bit of the digital value is a count value of the gray code counter and a least significant bit of the digital value is generated from the reference clock or the reverse clock thereof and defined as a least significant bit of the gray code counter.12-23-2010
20100321546Zoom lens and image pickup apparatus equipped with same - A zoom lens is composed, in order from the object side thereof, of a front side lens unit having a negative refracting power at the wide angle end and a rear side lens unit having a positive refracting power at the wide angle end. The front side lens unit includes a first lens unit located closest to the object side and having a positive refracting power and a second lens unit located on the image side of the first lens unit and having a negative refracting power. The distance between the first lens unit and the second lens unit is larger at the telephoto end than at the wide angle end. The rear side lens unit includes a third lens unit located closer to the object side at the telephoto end than at the wide angle end and having a positive refracting power, the distance between the third lens unit and the second lens unit being smaller at the telephoto end than at the wide angle end. The third lens unit satisfies the following condition: 0.0112-23-2010
20100321545Zoom lens and image pickup apparatus equipped with same - A zoom lens is composed, in order from the object side thereof, of a front side lens unit having a negative refracting power at the wide angle end and a rear side lens unit having a positive refracting power at the wide angle end. The front side lens unit includes a first lens unit located closest to the object side and having a positive refracting power and a second lens unit located on the image side of the first lens unit and having a negative refracting power. The distance between the first lens unit and the second lens unit is larger at the telephoto end than at the wide angle end. The rear side lens unit includes a third lens unit located closer to the object side at the telephoto end than at the wide angle end and having a positive refracting power, the distance between the third lens unit and the second lens unit being smaller at the telephoto end than at the wide angle end. The third lens unit satisfies the following condition:12-23-2010
20100321544SEMICONDUCTOR DEVICE, CAMERA MODULE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device comprises a semiconductor substrate, a through contact and a metal film. The semiconductor substrate has a semiconductor element at a first face. The wiring pattern includes a grounding line and is located at a side of a second face opposite to the first face of the semiconductor substrate. The through contact penetrates the semiconductor substrate from the first face to the second face and electrically connects between the semiconductor element and the wiring pattern. The metal film is located between the second face of the semiconductor substrate and a face where the wiring pattern exists and electrically connected with the grounding line.12-23-2010
20080246865IMAGE SENSING APPARATUS AND IMAGE CAPTURING SYSTEM - An image sensing apparatus includes a pixel unit which has an array of a plurality of groups each including a plurality of pixels arrayed in a row direction and a column direction, and an adding unit configured to add, of pixel signals output from the plurality of pixels arrayed in the groups, homochromatic pixel signals. The adding unit has, for each group, a common pixel amplifier commonly connected to homochromatic pixels. The adding unit adds the pixel signals of the homochromatic pixels in the gate portion of the common pixel amplifier so that the spatial centers of gravity of the pixels added in the group are arranged at equal pitches in at least one of the row direction and the column direction.10-09-2008
20080252760COMPACT IMAGE SENSOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - An exemplary image sensor package includes a base, an image sensor chip, a bonding layer, and an imaging lens. The image sensor chip is disposed on the base. The image sensor chip includes a photosensitive area. The bonding layer is disposed on at least one of the image sensor chip and the base. The bonding pads surround the photosensitive area. The imaging lens is adhered onto the bonding layer and hermetically seals the photosensitive area with the bonding layer. The imaging lens is configured for forming images on the photosensitive area. The present invention also relates to a method for manufacturing the image sensor package.10-16-2008
20080204582Image sensors, interfaces and methods capable of suppressing effects of parasitic capacitances - An interface capable of suppressing parasitic capacitance effects includes an array of switches switched in response to a switching signal. The interface suppresses effects of parasitic capacitance included in a bus, which transmits a reset signal and an image signal output from an image sensor. The suppressed parasitic capacitance effects suppress distortion of a digital image signal.08-28-2008
20110164158IMAGE SENSOR, SINGLE-PLATE COLOR IMAGE SENSOR, AND ELECTRONIC DEVICE - An image sensor includes an imaging area including a plurality of cells arrayed in a matrix on a semiconductor substrate, each of the cells including an avalanche photodiode, the avalanche photodiode including: an anode region buried in an upper portion of the semiconductor substrate; a cathode region buried in the upper portion of the semiconductor substrate separated from the anode region in a direction parallel to the surface of the semiconductor substrate; and an avalanche multiplication region defined between the anode and cathode regions, the avalanche multiplication region having an impurity concentration less than the anode and cathode regions; wherein depths of the anode and cathode regions from the surface of the semiconductor substrate are different from each other.07-07-2011
20100283878METHOD AND APPARATUS OF USING PROCESSOR WITH ANALOG-TO-DIGITAL CONVERTER WITHIN IMAGE SENSOR TO ACHIEVE HIGH DYNAMIC RANGE OF IMAGE SENSOR - A scheme is provided that enhances the dynamic range performance of images via multiple readouts during one exposure. The readout process circuit structure includes at least an analog-to-digital converter (ADC). The analog-to-digital converter converts analog data generated from an image sensor into digital data, allowing sub-frame readouts for improving a dynamic range of the image sensor. Additionally, methods of partial digitization (not a full number of bits) and image array are provided.11-11-2010
20100283877IMAGE SENSING DEVICE AND IMAGE SENSING METHOD - An image sensing device and image sensing method is described, in which an interrupt circuit is disposed to interrupt a clock signal input to a logic circuit not associated with the reading of image data when the image data is read, so as to temporarily interrupt the operation of the logic circuit, thereby reducing the power noises caused by the current generated during the operation of the logic circuit.11-11-2010
20110134294Optical Aliasing Filter, Pixel Sensor Arrangement and Digital Recording Device - A refraction at a suitably structured surface for example with an arrangement of the same between image plane and mapping optics is used to realize on the one hand a desired aliasing filtering or spatial low-pass filtering on the image plane wherein on the other hand the manufacturing of such structured surfaces may be realized in a cost-effective way. In addition to that, the plate thickness except for the amplitude of the surface structure and aspects of the stability of the plate is of no importance for handling the same, so that the integration into optical systems is facilitated.06-09-2011
20100238331SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.09-23-2010
20090213254Solid-state image pickup device and electronic instruments - A solid-state image pickup device which includes a circuit board provided with a hole and with a circuit layer formed thereon, a solid-state image pickup element housed in the hole and having an upper surface constituting a light-receiving face and electrodes formed on a peripheral portion of the upper surface, and a glass plate disposed over the light-receiving face and provided with a connecting conductive layer which is extended from the underside of the glass plate, via the sidewall of the glass plate, to the upper surface of the glass plate. The electrode is electrically connected with the connecting conductive layer formed on the underside of glass plate, and the connecting conductive layer is electrically connected with the circuit layer formed on the upper surface of the circuit board.08-27-2009
20110254985IMAGE PICKUP DEVICE AND SOLID-STATE IMAGE PICKUP ELEMENT - The solid-state image sensor of this invention includes an array of pixels and light-transmitting portions 10-20-2011
20110096215Image Sensors and Methods of Manufacturing Image Sensors - An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.04-28-2011
20110096214SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a light blocking section, and a protective layer. The protective layer protects the photoelectric conversion element and the light blocking section. A step section is formed on a surface of the protective layer. The step section is formed having a difference in height in a direction perpendicular to an irradiation surface of the photoelectric conversion element. The step section is provided in the light receiving area.04-28-2011
20100110247IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a readout circuitry, an electrical junction region, a poly contact, an interconnection, and an image sensing device. The readout circuitry is formed on a first substrate. The electrical junction region is formed in the first substrate. The electrical junction region is electrically connected to the readout circuitry. The poly contact is formed on the electrical junction region. The interconnection is formed on the poly contact. The image sensing device is formed on the interconnection. The image sensing device is electrically connected to the readout circuitry through the interconnection, the poly contact, and the electrical junction region.05-06-2010
20100214458Method for Manufacturing Imaging Device, Imaging Device and Portable Terminal - Provided are a manufacturing method for obtaining a low-cost imaging device, and the low-cost imaging device manufactured by such method. The method for manufacturing the imaging device is provided with a step of integrally forming a plurality of imaging devices by using a plurality of imaging optical systems for guiding photographing object light and a plurality of imaging elements for photoelectrically converting the photographing object light, and a step of dividing the integrally formed imaging devices by cutting into individual imaging devices. In the step of integrally forming the imaging devices, a shape for positioning the integrally formed imaging devices is formed.08-26-2010
20100214459SOLID-STATE IMAGING DEVICE AND CAMERA - Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.08-26-2010
20100214456CAMERA MODULE AND METHOD OF MANUFACTURING CAMERA MODULE - A small-sized and low-height camera module is provided.08-26-2010
20110176038SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.07-21-2011
20120206633TIMING GENERATOR AND METHOD OF GENERATING TIMING SIGNALS - Timing generators and methods of generating timing signals are disclosed. In one implementation, a timing generator for an imaging device includes a timing generator memory configured to store timing information, a timing core coupled to the timing generator memory and configured to read the timing information from the timing generator memory, and a processor core coupled to the timing core and configured to control a plurality of counters. The timing core can be further configured to generate a plurality of timing patterns based on the timing information and the plurality of counters. The timing generator can also be configured to generate a plurality of toggle positions for a plurality of timing signals based on the plurality of timing patterns.08-16-2012
20100194943SOLID-STATE IMAGE PICKUP DEVICE - In a rear surface incidence type CMOS image sensor having a wiring layer 08-05-2010
20100194942LIGHT SPOT POSITION DETECTION DEVICE, OPTICAL DEVICE INCLUDING THE SAME, AND ELECTRONIC EQUIPMENT INCLUDING THE OPTICAL DEVICE - In a light spot position detection device, in one frame of operation, under control of a control unit, pixel data obtained in a pixel section in exposure of a solid-state image sensor in synchronization with light emission of a light emitting element are added to corresponding storage portions in a memory unit, and pixel data obtained in exposure of the image sensor asynchronous to the light emission of the light emitting element are subtracted from the corresponding storage portions, to store pixel data of only signal light in the storage portions. A given number of frames of operation are repetitively performed to accumulate pixel data of only the signal light in the storage portions. The position of a light spot on the pixel section is calculated based on the pixel data of only the signal light and outputted whether the storage portions are saturated or not with the pixel data.08-05-2010
20090174799Method of driving an image sensor - For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.07-09-2009
20090174798EXIF OBJECT COORDINATES - An image acquisition device may include a sensing unit to register optical information and convert it into raw image data including intensity information associated with the optical information; and a processing unit to convert the raw image data into digital image information, where the processing unit is configured to identify one or more objects in the converted digital image information and store coordinates associated with the identified one or more objects as metadata.07-09-2009
20100026864IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises: a readout circuitry, an interconnection, a contact plug, and an image sensing device. The readout circuitry is formed in a first substrate. The interconnection is electrically connected to the readout circuitry over the first substrate. The contact plug is formed over the interconnection, and includes an insulating layer at regions in an upper side thereof. The image sensing device is formed over the contact plug.02-04-2010
20100026863IMAGE SENSOR AND FABRICATION METHOD THEREOF - An image sensor is provided. The image sensor comprises a semiconductor substrate, a dielectric interlayer, an interconnection, an image sensing unit, a via hole piercing the image sensing unit and the dielectric layer, and a bottom electrode. The semiconductor substrate includes a readout circuit. The dielectric interlayer is disposed on the semiconductor substrate. The interconnection is disposed in the dielectric interlayer and connected electrically to the readout circuit. The image sensing unit is disposed on the dielectric interlayer and includes a stack of a first impurity region and a second impurity region. The via hole pierces the image sensing unit and the dielectric interlayer to expose the interconnection. The bottom electrode is disposed in the via hole to electrically connect the interconnection and the first impurity region of the image sensing unit.02-04-2010
20100020214SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME - The present invention is a semiconductor device including: a resistor R01-28-2010
20100020212IMAGE PICKUP DEVICE - A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.01-28-2010
20100020211SOLID-STATE IMAGE PICKUP DEVICE, DRIVING CONTROL METHOD, AND IMAGE PICKUP APPARATUS - The present invention relates to a solid-state image pickup device, a driving control method, and an image pickup apparatus that are capable of performing, in the case of changing the resolution of AD conversion, changing of only a pulse that needs to be changed, with a more simplified configuration.01-28-2010
20100020210Image Sensing Device And Image Processing Device - There is provided an image sensing device including: an image acquisition portion that switches between a plurality of reading methods in which pixel signals of a group of light receiving pixels arranged in an image sensor are read and that thereby acquires, from the image sensor, a first image sequence formed such that a plurality of first images having a first resolution are arranged chronologically and a second image sequence formed such that a plurality of second images having a second resolution higher than the first resolution are arranged chronologically; and an output image sequence generation portion that generates, based on the first and second image sequences, an output image sequence formed such that a plurality of output images having the second resolution are arranged chronologically, in which a time interval between sequentially adjacent two output images among the plurality of output images is shorter than a time interval between sequentially adjacent two second images among the plurality of second images.01-28-2010
20100020209Imaging method and apparatus - Disclosed are an imaging method and apparatus. The apparatus may include an image sensor that may include a plurality of pixels, wherein at least one pixel of the plurality of pixels includes a light-detector element and a filter that band-passes a select visible light component to the light-detector element and band-passes a select non-visible light component to the light-detector element. A color value and depth value may be obtained using the same pixel through the image sensor.01-28-2010
20120069230SOLID-STATE IMAGING APPARATUS AND CAMERA USING THE SAME - At least a solid-state imaging device and one or a plurality of bare ICs that are disposed on the back face or on the back face side of the solid-state imaging apparatus and serve as peripheral circuits. The bare ICs are sealed by a resin. A circuit board may be interposed between the solid-state imaging device and the bare ICs, or the solid-state imaging device and the ICs are directly bonded together. According to another aspect, IC chips and other parts as peripheral circuits of a solid-state imaging device are disposed on the inner surface, mainly the ceiling surface, of a light-shielding case. According to a further aspect, a solid-state imaging apparatus for photoelectrically converting, with an imaging device, an image formed by introducing imaging light into the inside of the apparatus is provided with a package having a dark space in itself and accommodating the imaging device in the dark space, and a pinhole for introducing imaging light into the dark space and forming an image of an imaging object on the imaging face of the imaging device.03-22-2012
20090160986PIXEL SENSOR - A photodetecting circuit is disclosed. The photodetecting circuit includes a photodetector for generating a signal in response to incident light, a storage node having first and second node terminals, a transfer transistor, disposed intermediate the first node terminal of the storage node and the photodetector, for electrically connecting the first node terminal and the photodetector upon receiving a transfer signal to a gate of the transfer transistor, allowing charge stored in the storage node to change based on the signal of the photodetector, a reset transistor, disposed intermediate a reset voltage node and the first node terminal of the storage node, for electrically connecting the first node terminal to the reset voltage node upon receiving a reset signal to a gate of the reset transistor, and an output circuit for generating an output signal during a read period of the photodetecting circuit, the output signal being at least partially based on a voltage at the first terminal. The photodetecting circuit is configured to receive the reset signal, receive the transfer signal, and receive a compensation signal at the second terminal of the storage node at least during the read period, the compensation signal increasing the voltage at the first terminal whilst the output circuit generates the output signal, the compensation signal being a logically negated version of the transfer signal.06-25-2009
20120147233IMAGING DEVICE AND IMAGING APPARATUS - An imaging device includes: a pixel array that has a plurality of pixels disposed according to an oblique pixel arrangement; a first conversion means for performing digital conversion for pixel signals output from pixels in an even column of the pixel array; a second conversion means for performing digital conversion for pixel signals output from pixels in an odd column of the pixel array; and an addition means for adding pixel data output from the first conversion means and the second conversion means, wherein each of the first conversion means and the second conversion means includes a counter having a flip-flop, a first latch circuit, and a second latch circuit.06-14-2012
20110050967DA CONVERTER AND SOLID-STATE IMAGING DEVICE - A DA converter includes: a reference current generating circuit that generates a reference current; current sources that supply currents according to the reference current; a voltage output circuit that outputs a voltage according to a current to be supplied thereto; switch circuits provided for the current sources respectively to each switch a connection of each of the current sources to the voltage output circuit or a predetermined load; a control section that controls the switch circuits based on an input digital signal to select that of the current sources which is to be connected to the voltage output circuit, and outputs a voltage according to the digital signal from the voltage output circuit; and a switch that stops an operation of at least one of the current sources based on a control signal from the control section, without stopping an operation of the reference current generating circuit.03-03-2011
20110149128Anthraquinone dye-containing material, composition including the same, camera including the same, and associated methods - A (meth)acrylate ester includes a (meth)acrylate moiety having an ester oxygen, an anthraquinone moiety having a transmittance spectrum producing blue light, and a linking group covalently bound to the ester oxygen and to a ring of the anthraquinone moiety, the linking group including, as a first component: phenyl, naphthyl, a linear alkyl group having from 1 to about 6 carbons, a branched alkyl group having from 3 to about 6 carbons, a cycloalkyl group having from about 3 to about 20 carbons, or a substituted aromatic group.06-23-2011
20110304754IMAGE SENSOR MODULE AND CAMERA MODULE - An exemplary image sensor module includes a plate, an image sensor, and a number of conductive wires. The plate includes a top surface, a bottom surface, a light passing through hole, a number of spaced receiving holes extending through the top surface and the bottom surface, and a number of conductive pads on the top surface. The receiving holes surround the through hole. The sensor includes a first surface and a number of bonding pads corresponding to the respective conductive pads. The first surface opposes the bottom surface, and is mounted on the bottom surface. The first surface includes a light sensitive region aligned with the through hole, and a light insensitive region surrounding the light sensitive region. The bonding pads are arranged on the light insensitive region. The wires pass through the respective receiving holes, and respectively electrically connect the bonding pads to the corresponding conductive pads.12-15-2011
20110304755Solid-state image pickup element and camera system - The present disclosure provides a solid-state image pickup element, including, a pixel portion in which plural pixels each carrying out photoelectric conversion are disposed in a matrix, and a pixel signal reading portion having a function of reading out pixel signals from the pixel portion to signal lines, and sampling reset levels and signal levels of the pixels, wherein the pixel signal reading portion includes column processing units converting analog signals read out into digital signals in correspondence to a column disposition of the pixels, respectively, and each of the column processing units carries out the sampling for the reset level of the pixel plural times, and averages a result of the sampling after the result of the sampling is integrated in a digital integrating circuit within each of the column processing units.12-15-2011
20110141329IMAGE PICKUP APPARATUS - The image pickup apparatus includes an image pickup element 06-16-2011
20120038803IMAGE SENSOR MODULE AND CAMERA MODULE - An exemplary image sensor module includes a plate, an image sensor, and a number of conductive wires. The plate includes a top surface, a bottom surface, an light passing through hole, and a number of conductive pads on the top surface. The sensor includes a first surface and a number of bonding pads corresponding to the respective conductive pads. The first surface opposes the bottom surface. The first surface includes a light sensitive region aligned with the through hole, and a light insensitive region surrounding the light sensitive region. The insensitive region is mounted on the bottom surface. The bonding pads are arranged on the light insensitive region. The wires pass through the light passing through hole, and respectively electrically connect the bonding pads to the corresponding conductive pads.02-16-2012
20110109779SOLID-STATE IMAGING DEVICE, ITS PRODUCTION METHOD, CAMERA WITH THE SOLID-STATE IMAGING DEVICE, AND LIGHT RECEIVING CHIP - Provided is a light-receiving chip whose transparent protection plate has an area equal to or smaller than an area of the light-receiving chip, and which does not require a base portion for mounting. Provision of the light-receiving chip contributes to reduction in size and weight of cameras. In addition, provision of a solid-state imaging apparatus having excellent productivity contributes to reduction in price of cameras. A solid-state imaging apparatus (05-12-2011
20110109780IMAGING DEVICE THAT PREVENTS LOSS OF SHADOW DETAIL - An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.05-12-2011
20120038804SOLID-STATE IMAGING DEVICE, DRIVING CONTROL METHOD THEREOF, AND IMAGING APPARATUS - A solid-state imaging including a comparing circuit, an inverting circuit, and a masking circuit, and that performs column parallel AD conversion processing of analog pixel signals output from a plurality of pixels arranged in a two-dimensional matrix form. The comparing circuit outputs a difference signal obtained by comparing each of the pixel signals outputted from the pixels with a reference signal having a ramp waveform. The inverting circuit inverts a logic of the difference signal outputted from the comparing circuit. The masking circuit masks an output of an output signal of the inverting circuit to a circuit in a subsequent stage during an input offset canceling period in which the comparing circuit cancels an input offset between the pixel signal and the reference signal.02-16-2012
20120147232IMAGING APPARATUS - An imaging apparatus has two-dimensional image sensors which are discretely disposed, an imaging optical system which enlarges an image of an object and forms an image thereof on an imaging plane of the two-dimensional image sensors, and a moving unit which moves the object in order to execute a plurality of times of imaging while changing the divided area to be imaged by each of the two-dimensional image sensors. At least a part of the plurality of divided areas is deformed or displaced on the imaging plane due to aberration of the imaging optical system. Each position of the two-dimensional image sensors is adjusted according to a shape and position of the corresponding divided area on the imaging plane.06-14-2012
20100225794Digital filter, analog-to-digital converter, and applications thereof - In one embodiment, the ADC includes a modulator configured to generate a symbol sequence, an operand generator configured to generate operands, and a selector configured to selectively output at least one of (1) a reference value and (2) at least one of the operands based on the symbol sequence. The ADC further includes an accumulator configured to accumulate output from the selector.09-09-2010
20110063484IMAGE PICKUP DEVICE AND IMAGE PICKUP ELEMENT - A technology of a phase-difference detecting image pickup element that can precisely perform focus detection even if the position of an exit pupil with respect to the image pickup element changes is provided. The image pickup element of an image pickup device includes an AF pixel pair 03-17-2011
20110063486SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state imaging device according o an implementation of the present invention includes a plurality of unit pixels arranged in rows and columns. The unit pixels each include a photodiode which performs photoelectric conversion, a top lens which collects light, and an intralayer lens which collects, onto the photodiode, the light collected by the top lens. A centroid of the photodiode is displaced from the center of the unit pixel in a first direction. The center of the top lens is displaced from the center of the unit pixel in the first direction. A centroid of the intralayer lens is displaced from the center of the unit pixel in the first direction.03-17-2011
20110063483Image sensor with wide dynamic range - An image sensor, system and method that alternates sub-sets of pixels with long exposure times and pixels with short exposure times on the same sensor to provide a sensor having improved Wide Dynamic Range (WDR). The sub-sets of pixels are reset at different time intervals after being read, which causes the respective integration times to vary. By combining information contained in the both the short and long integration pixels, the dynamic range of the sensor is improved.03-17-2011
20110063485PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR DRIVE METHODS - A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula.03-17-2011
20110317051SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of pixels, which convert light into signal voltages, and a plurality of analog-digital (AD) converters, which convert the signal voltages into a plurality of digital signals. Each of the plurality of AD converters includes an analog circuit, which receives a same power as a power of the plurality of pixels, and a digital circuit, which receives power having a voltage lower than a voltage of the analog circuit. The solid-state imaging device further includes a controller configured to suspend supplying the same power to the analog circuit, which is included in one of the plurality of AD converters that has finished a conversion.12-29-2011
20110317050METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND CAMERA MODULE - According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an insulating film, on a surface of the semiconductor substrate including a surface exposed by the polishing.12-29-2011
20110317049IMAGING DEVICE AND IMAGING CONTROL CIRCUIT - An imaging device 12-29-2011
20110317048IMAGE SENSOR WITH DUAL LAYER PHOTODIODE STRUCTURE - An image system with a dual layer photodiode structure is provided for processing color images. In particular, the image system can include an image sensor that can include photodiodes with a dual layer photodiode structure. In some embodiments, the dual layer photodiode can include a first layer of photodiodes (e.g., a bottom layer), an insulation layer disposed on the first layer of photodiodes, and a second layer of photodiodes (e.g., a top layer) disposed on the insulation layer. The first layer of photodiodes can include one or more suitable pixels (e.g., green, blue, clear, luminance, and/or infrared pixels). Likewise, the second layer of photodiodes can include one or more suitable pixels (e.g., green, red, clear, luminance, and/or infrared pixels). An image sensor incorporating dual layer photodiodes can gain light sensitivity with additional clear pixels and maintain luminance information with green pixels.12-29-2011
20110157438PAUSING COLUMN READOUT IN IMAGE SENSORS - An image sensor includes a two-dimensional array of pixels having multiple column outputs and an output circuit connected to each column output. Each output circuit is configured to operate concurrent sample and read operations. An analog front end (AFE) circuit processes pixel data output from the output circuits and an AFE clock controller transmits an AFE clocking signal to the AFE circuit to effect processing of the pixel data. A timing generator outputs a column address sequence that is received by a column decoder. During one or more sample operations the timing generator suspends the column address sequence and subsequently during the one or more sample operations the AFE clock controller suspends the AFE clocking signal. The AFE clocking signal and the column address sequence resume at the end of the one or more sample operations.06-30-2011
20120002088PHYSICAL QUANTITY DISTRIBUTION DETECTOR HAVING A PLURALITY OF UNIT COMPONENTS WITH SENSITIVITY TO A PHYSICAL QUANTITY CHANGE OF LIGHT - A physical information acquiring method of acquiring physical information for a predetermined purpose on the basis of change information that is acquired under predetermined detection conditions for a physical quantity using an portion for physical quantity distribution detection. The portion for physical quantity distribution detection includes a detector that detects change information corresponding to a change in a physical quantity made incident on the detector and has unit components that output unit signals based on the change information detected by the detector arranged in a predetermined order. In the physical information acquiring method, a carrier signal is converted into a signal related to a frequency on the basis of the change information detected by the detector. The physical information for a predetermined purpose is acquired using the signal related to a frequency.01-05-2012
20120002087Camera Module - Disclosed is a camera module including a WLO (wafer level optic) which is manufactured as a wafer optical device; an image sensor which converts an optical signal from the WLO into an electric signal; a holder which functions as a housing of the camera module; and a substrate which has a circuit pattern and transfers the converted electrical signal to a main body, wherein a stumbling sill is formed at an outer edge portion of the substrate so that a lower end of the holder is mounted on the stumbling sill.01-05-2012
20120008025SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.01-12-2012
20120008024SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, SOLID-STATE IMAGING APPARATUS, AND IMAGE CAPTURING APPARATUS - A solid-state imaging device includes: a semiconductor substrate that has a light sensing portion which photoelectrically converts incident light; an infrared cut filter layer or a light shielding layer that is provided on a surface side opposite to a light receiving surface of the semiconductor substrate and is formed on substantially the entire surface of an area corresponding to an area in which the light sensing portion of the semiconductor substrate is formed; and a wiring layer that is provided on an upper layer of the infrared cut filter layer or the light shielding layer.01-12-2012
20110096213WAFER-SHAPED OPTICAL APPARATUS AND MANUFACTURING METHOD THEREOF, ELECTRONIC ELEMENT WAFER MODULE, SENSOR WAFER MODULE, ELECTRONIC ELEMENT MODULE,SENSOR MODULE, AND ELECTRONIC INFORMATION DEVICE - A single material is used for an optical member, such as a lens, to obtain high optical accuracy. A glass substrate with a plurality of holes is used as a base material (framework), and overall resin contraction occurred during manufacturing is restrained and a wafer-shaped lens module having a plurality of resin lenses with high dimensional accuracy can be formed. Further, variation in the thickness of the glass substrate is absorbed by lens resin formed on the glass substrate, and the thickness of a flange section can be controlled accurately and variation between resin lenses can also be controlled accurately when layered. Further, a lens portion of the resin lens is made only of a single lens resin, and the refractive index can be maintained even, the designing can be facilitated, and the thickness can be controlled accurately to manufacture a condensing lens with high accuracy.04-28-2011
20120057057IMAGE CAPTURING APPARATUS - An image capturing apparatus comprising an image sensor including image forming pixels each of which generates a signal for image generation, and focus detection pixels each of which generates a signal for phase difference detection, readout means for reading out the signal of each pixel of the image sensor, focus detection means for detecting a focus by a phase-difference detection method using the signals for phase difference detection from the focus detection pixels, and switching means for switching a combination of the focus detection pixels to be used for focus detection by the focus detection means between a case in which the readout means reads out the signals of the pixels of the image sensor after thinning-out and a case in which the readout means reads out the signals of the pixels of the image sensor without thinning-out.03-08-2012
20120057056SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.03-08-2012
20120307118SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, AND IMAGING DEVICE - a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.12-06-2012
20120307117SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes: a pixel array section in which pixels that accumulate photoelectrically-converted charges are arranged in a matrix shape; and an analog-voltage stabilizing circuit configured to supply, when an analog voltage exceeds a predetermined value, the analog voltage as a power supply voltage for the pixels and supply, when the analog voltage is equal to or smaller than the predetermined value, the analog voltage as the power supply voltage for the pixels after boosting the analog voltage.12-06-2012
20120154651IMAGE SENSING APPARATUS AND METHOD OF CONTROLLING THE IMAGE SENSING APPARATUS - A sensed image generated from an image signal output from an image sensor for receiving light that becomes incident sequentially through an imaging lens and a microlens array that is a two-dimensional array including a plurality of microlenses is acquired. A list is created in which, for each pixel position on the image sensor, the correspondence between the coordinates of the light incident at the pixel position on the imaging lens and the coordinates of the pixel position is registered. Images obtained by rearranging pixels at the coordinate positions on the image sensor corresponding to the coordinates in accordance with the arrangement order of the coordinates on the imaging lens are generated as a parallax image group.06-21-2012
20120154650SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A solid-state image sensor includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type that is arranged to contact a lower face of the first semiconductor region and functions as a charge accumulation region, a third semiconductor region including side faces surrounded by the second semiconductor region, a fourth semiconductor region of the second conductivity type that is arranged apart from the second semiconductor region, and a transfer gate that forms a channel to transfer charges accumulated in the second semiconductor region to the fourth semiconductor region. The third semiconductor region is one of a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type whose impurity concentration is lower than that in the second semiconductor region.06-21-2012
20120154649COUNTER CIRCUITS, ANALOG TO DIGITAL CONVERTERS, IMAGE SENSORS AND DIGITAL IMAGING SYSTEMS INCLUDING THE SAME - In at least one example embodiment, a counter circuit includes a latch stage configured to generate a latch stage output clock based on a first rising edge of an enable signal, a state of a counter clock at a previous falling edge of the enable signal, and a state of the output clock at the previous falling edge of the enable signal such that the latch stage output clock and the counter clock have a different state if the state of the counter clock at the previous falling edge and the state of the output clock at the previous falling edge are the same and such that the latch stage output clock and the counter clock have a same state if the state of the counter clock at the previous falling edge and the state of the output clock at the previous falling edge are different.06-21-2012
20110058077SOLID-STATE IMAGING APPARATUS AND DIGITAL CAMERA - The solid-state imaging apparatus illustrates a solid-state imaging element having a light receiving portion; a package which contains the solid-state imaging element; a light-transmissive member which is provided above the solid-state imaging element; and a partitioning member which is fixed to the package to isolate the light receiving portion of the solid-state imaging element from the surrounding portion of the light receiving portion of the solid-state imaging element.03-10-2011
20120062771SOLID-STATE IMAGING DEVICE - In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging element.03-15-2012
20090153706IMAGING MODULE PACKAGE - An imaging module package includes a substrate, an imaging sensor chip, a functional unit, a housing, and a lens module positioned in the housing. The substrate defines an upper chamber extending through a top surface thereof, and a lower chamber extending through a bottom surface thereof. The imaging sensor chip is positioned in the upper chamber and is electrically connected to the substrate. The functional unit is positioned in the lower chamber and is electrically connected to the substrate. The housing is mounted on the top surface of the substrate and is disposed above the imaging sensor chip.06-18-2009
20120026369Imaging Pickup Lens, Imaging Pickup Apparatus and Moblile Terminal - Provided is a small-sized five-element image pickup lens which ensures a sufficient lens speed of about F2 and exhibits various aberrations being excellently corrected. The image pickup lens is composed of, in order from the object side, a first lens with a positive refractive power, including a convex surface facing the object side; a second lens with a negative refractive power, including a concave surface facing the image side; a third lens with a positive or negative refractive power; a fourth lens with a positive refractive power, including a convex surface facing the image side; and a fifth lens with a negative refractive power, including a concave surface facing the image side. The image-side surface of the fifth lens has an aspheric shape, and includes an inflection point at a position excluding an intersection point with the optical axis.02-02-2012
20110069212IMAGE PICKUP LENS, IMAGE PICKUP MODULE, METHOD FOR MANUFACTURING IMAGE PICKUP LENS, AND METHOD FOR MANUFACTURING IMAGE PICKUP MODULE - In order that an image pickup lens etc. may be realized which make it possible to easily realize an arrangement which reduces a possibility of deterioration of an optical characteristic, and which is suitable for a reduction in manufacturing costs and for mass-production, an image pickup lens of the present invention satisfies the following formulas (1) and (2);03-24-2011
20100123810Flicker Detection Circuit for Imaging Sensors that Employ Rolling Shutters - Circuitry, apparatus and methods provide flicker detection and improved image generation for digital cameras that employ image sensors. In one example, circuitry and methods are operative to compare a first captured frame with a second captured frame that may be, for example, sequential and consecutive or non-consecutive if desired, to determine misalignment of scene content between the frames. A realigned second frame is produced by realigning the second frame with the first frame if the frames are determined to be misaligned. Luminance data from the realigned second frame and luminance data from the pixels of the first frame are used to determine if an undesired flicker condition exists. If an undesired flicker condition is detected, exposure time control information is generated for output to the imaging sensor that captured the frame, to reduce flicker. This operation may be done, for example, during a preview mode for a digital camera, or may be performed at any other suitable time.05-20-2010
20130010166IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND SOLID-STATE IMAGE PICKUP DEVICE - According to one embodiment, an image processing device includes a black level regulating unit. The black level regulating unit has a frame integration average holding unit. A frame integration average is an integration average of an optical black signal using a video frame as a unit. The frame integration average holding unit holds the frame integration average as a signal to be applied to a black level regulation of an effective pixel signal. The frame integration average holding unit updates the frame integration average when an image pickup condition is changed.01-10-2013
20130010167HANDHELD IMAGING DEVICE WITH IMAGE PROCESSOR AND IMAGE SENSOR INTERFACE PROVIDED ON SHARED SUBSTRATE - A handheld imaging device includes an image sensor for sensing an image; a processor for processing the sensed image; a plurality of processing units provided in the processor, the plurality of processing units connected in parallel by a crossbar switch to form a multi-core processing unit for the processor; and an image sensor interface for converting signals from the image sensor to a format readable by the plurality of processing units, the image sensor interface sharing a wafer substrate with the processor. The image sensor interface provides communication between the micro-controller and the image sensor. The bus interface provides communication between the micro-controller and devices external to the micro-controller other than the image sensor. Communication between the image sensor interface and the micro-controller is conducted entirely on the shared wafer substrate.01-10-2013
20110090384SOLID-STATE IMAGING DEVICE - Provided is a solid-state imaging device capable of reducing occurrence of noise resulting from reflected light to improve light use efficiency in a case where a solid-state imaging device is constructed to have a structure in which incident light passing through a substrate is reflected toward a photoelectric conversion unit. The solid-state imaging device includes: a photoelectric conversion unit formed in an inner portion of a substrate; a condensing unit provided on a side of the substrate which incident light enters, for condensing the incident light to the photoelectric conversion unit; and a reflecting unit provided on a side of the substrate which is opposed to the condensing unit, the reflecting unit being concave to the substrate, in which the reflecting unit has a structure for substantially aligning a same magnification imaging position of the reflecting unit with a focusing position of the condensing unit.04-21-2011
20110090383SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.04-21-2011
20110102653IMAGING UNIT - The present invention relates to an imaging unit including an imaging device for performing photoelectric conversion. There is provided an imaging unit with which the mechanical strength of an imaging device can be ensured while allowing light to pass through the imaging device so as to improve the usability in various operations using the imaging device. An imaging unit (05-05-2011
20110102652Image Detecting Module and Lens Module - An image detecting module includes a socket, a circuit board, an image sensor, an elastic element, a filter and a holder. The socket comprises an inner circumference wall along a main axis for defining an inner space and a platform that extended from the inner circumference wall. Pluralities of mounting holes are provided on the holder and pluralities of protrusions are provided on the socket; thus the elastic element and the filter could be fixed between the platform and the holder by fitting the protrusions into the mounting holes.05-05-2011
20120120289IMAGE OUTPUTTING APPARATUS, IMAGE OUTPUTTING METHOD, IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, PROGRAM, DATA STRUCTURE AND IMAGING APPARATUS - An image outputting apparatus includes a header production section for producing a header including header information formed from first and second frame information regarding whether pixel data included in a payload are of first and last lines of one frame, respectively, first line information regarding whether or not the pixel data included in the payload are valid, and second line information regarding a line number of a line formed from the pixel data included in the payload, and an error detection code for use for detection of an error of the header information. A packet production section produces a packet which includes, in the payload thereof, pixel data for one line which configure an image obtained by imaging by an imaging section and to which the header is added. An outputting section outputs the produced packet to an image processing apparatus.05-17-2012
20120249847SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.10-04-2012
20120249846SOLID-STATE IMAGE SENSOR AND IMAGE CAPTURING APPARATUS - A solid-state image sensor which comprises a pixel group in which unit pixels each including a microlens and a plurality of photo-electric converters are arrayed two-dimensionally, wherein a shielding unit that shields part of all of a plurality of photo-electric converters corresponding to a single microlens is provided in a portion of the unit pixels.10-04-2012
20100245640CCD IMAGING ARRAY WITH EXTENDED DYNAMIC RANGE - A CCD such as a frame transfer CCD has an extended dynamic range. The image built up in the image region 09-30-2010
20100245639Imaging device, method of converting read-out signal, and camera - An imaging device includes: a pixel unit that converts incident light into an electrical signal corresponding to the amount of the incident light; and a read-out unit that reads out a read-out signal from the pixel unit for a first period and a second period, wherein the read-out unit includes a clock signal generating section that generates clock signals having a frequency corresponding to the voltage of the read-out signal, a first counter section that counts the clock signals generated by the clock signal generating section, a second counter section that counts output clock signals of the first counter section, a first correction section that corrects the voltage of the read-out signal to be constant before start of counting of the first and second counter sections for the first period and stops correction of the voltage of the read-out signal after the start of counting of the first and second counting sections for the first period and during the second period, and a second correction section that corrects a frequency of the output clock signal of the first counter section to a frequency that is higher than the frequency of the output clock signal.09-30-2010
20120127352SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A solid-state image pickup apparatus includes a reading unit having a plurality of pixels connected thereto, holding signals from the pixels, and a control unit capable of controlling operations of the pixels and reading unit. The control unit controls the pixels and reading unit in a first operation mode without addition, in a second operation mode in which signals from aa of the pixels are added, aa being an integer greater than one, and in a third operation mode in which signals from bb of the pixels are added, bb being an integer greater than aa. The reading unit includes a holding unit having a capacitance value of C, and the holding unit includes a first capacitor having a capacitance value of C/bb and a second capacitor having a capacitance value of C/p, p being a common multiple of aa and bb.05-24-2012
20110001858IMAGING APPARATUS - An imaging apparatus with improved convenience, which can perform various types of processing using an imaging device while performing phase difference detection, is provided.01-06-2011
20100208111Driving module for imaging apparatus and driving method thereof - A driving method for an imaging apparatus is provided, wherein the driving method is applied to protect an electronic device that includes the imaging apparatus. The method includes the following steps: blanking a vertical pulse signal outputted by a timing generator unit when the electronic device is booting; and then removing the blanking function so that the timing generator unit may output the vertical pulse signal normally to the imaging apparatus when the electronic apparatus has finished booting.08-19-2010
20100208112Ramp generators and image sensors including the same - A ramp generator includes a row decoder, a column decoder, a current cell matrix and a current-voltage converter. The row decoder generates row selection signals, and the column decoder generates column selection signals. Each of current cells included in the current cell matrix is turned on to provide a unit current if a corresponding row selection signal and a corresponding column selection signal are activated. Each of the current cells is maintained to be turned on even if the corresponding row selection signal or the corresponding column selection signal is deactivated. The current cell matrix outputs an output current by summing unit currents provided from the current cells that are turned on. The current-voltage converter converts the output current of the current cell matrix into a ramp voltage. Therefore, the ramp generator may have a small size and prevent a glitch.08-19-2010
20120212656SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE - The solid-state image sensor of the present invention includes an array of photosensitive cells, an array 08-23-2012
20120133810SOLID STATE IMAGING DEVICE - A solid state imaging device has a semiconductor substrate, a light receiving region provided on a surface layer on a first surface side of the semiconductor substrate, the light receiving region having a silicided surface, second impurity diffusion layer provided adjacent to the light receiving region on the surface layer on the first surface side of the semiconductor substrate, a gate insulating film provided adjacent to the second impurity diffusion layer on the first surface of the semiconductor substrate, a gate electrode provided on the gate insulating film, and a third impurity diffusion layer provided on an opposite side to the second impurity diffusion layer, with the gate insulating film and the gate electrode sandwiched.05-31-2012
20120133808CORRELATED DOUBLE SAMPLING CIRCUIT, METHOD THEREOF AND DEVICES HAVING THE SAME - A CDS circuit is provided. The CDS circuit includes a signal compressor which compresses each of a pixel signal and a ramp signal using capacitive dividing and outputs a compressed pixel signal and a compressed ramp signal, and a comparator which compares the compressed pixel signal with the compressed ramp signal and outputs a comparative signal corresponding to a comparison result.05-31-2012
20120133809SOLID STATE IMAGE SENSOR - A solid state image sensor has a plurality of ranging pixels on the imaging area thereof and each of the ranging pixels has a photoelectric conversion section and an optical waveguide arranged at the light-receiving side of the photoelectric conversion section. The optical waveguide has at least two optical waveguides including a first optical waveguide arranged at the light-receiving side and a second optical waveguide arranged at the side of the photoelectric conversion section in the direction of propagation of light. The core region of the first optical waveguide shows a refractive index lower than the refractive index of the core region of the second optical waveguide and is designed so as to show a high light-receiving sensitivity relative to light entering at a specific angle.05-31-2012
20120218449AUTOFOCUS CAMERA MODULE PACKAGING WITH CIRCUITRY-INTEGRATED ACTUATOR SYSTEM - A camera module with no PCB that instead has a lens actuator/housing that has circuitry on a bottom surface thereof for direct electrical connection to a mobile electronic device. The housing further has a recess formed in the bottom surface thereof to receive an image sensor. The circuitry is three-dimensional in that it includes a first set of contact pads on one planar surface for connection to the mobile electronic device, a second set of contact pads on a planar surface within the recess for connection to the image sensor, and conductive traces that connect each of the contact pads of the first set with an associated one of the contact pads of the second set by having the trace follow a path from the first planar surface, along a intersecting third planar surface to the second planar surface.08-30-2012
20120162489IMAGE SENSING DEVICE AND IMAGE SENSING METHOD - An image sensing device and image sensing method is described, in which an interrupt circuit is disposed to interrupt a clock signal input to a logic circuit not associated with the reading of image data when the image data is read, so as to temporarily interrupt the operation of the logic circuit, thereby reducing the power noises caused by the current generated during the operation of the logic circuit.06-28-2012
20100259658SOLID-STATE IMAGE CAPTURING ELEMENT AND DRIVING METHOD FOR THE SAME, METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURING ELEMENT, AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing element according to the present invention includes, disposed in a surface portion from an upper part of the photodiode region to the electric charge detecting section: a second conductivity type first region; a second conductivity type second region; and a second conductivity type third region, one end of which is adjacent to the second conductivity type second region and the other end of which is adjacent to the electric charge detecting section, where each impurity concentration of the first, second and third regions is set in a manner to form an electric field being directed from the second conductivity type first region through the second conductivity type second region to the second conductivity type third region.10-14-2010
20090059044WIDE DYNAMIC RANGE CMOS IMAGE SENSOR - An image sensor with a pixel array that includes at least one pixel. The sensor may also include a circuit that is connected to the pixel and provides a final image pixel value that is a function of a sampled reset output signal generated from the pixel. The final image pixel value is set to a reserved value if the sampled reset output signal exceeds a threshold. The final image may be a function of first, second and/or third images and a field that provides information on whether the final image includes a first exposure rate, a second exposure rate and/or a third exposure rate.03-05-2009
20090059043PORTABLE ELECTRONIC DEVICE HAVING HIGH-RESOLUTION CAMERA WITH AUTO FOCUS LENS - An improved system for incorporating a high-resolution digital camera function into a multifunction portable electronic device is provided. In exemplary embodiments, a clamshell portable electronic device, such as a mobile telephone, is provided with a digital camera function. The lens of the camera function is located in one portion of the clamshell, and the image sensor is located in another portion of the clamshell. When the clamshell is closed, the lens and image sensor become optically aligned so that the camera function may be employed. By providing a system in which the digital camera function is used with the clamshell in the closed position, the potential focal length is effectively doubled as compared to that in the typical clamshell mobile telephone.03-05-2009
20090128674Solid-state image capturing apparatus, driving method of the solid-state image capturing apparatus, and electronic information device - A solid-state image capturing apparatus includes a plurality of pixel sections, a vertical transfer section, and a horizontal transfer section, wherein the horizontal transfer section includes a plurality of transfer gates consecutively arranged in a horizontal direction and a signal wiring for supplying a driving signal to the transfer gates, and wherein a layout pattern of at least one layer of constituent members which constitute the horizontal transfer section is a pattern in which the transfer gates and the signal wiring are connected so that electric charge transfer directions become opposite from each other on both sides of a branching position in the horizontal transfer section.05-21-2009
20100271517IN-PIXEL CORRELATED DOUBLE SAMPLING PIXEL - An in-pixel correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a photodetector to accumulate radiation induced charges, a floating diffusion element electrically coupled to an output of the photodetector through a transfer switch, and. a capacitor-element having an input node electrically coupled to an amplifier and through the amplifier to the floating diffusion element and an output node electrically coupled to an output of the pixel. The capacitor-element is configured to sample a reset value of the floating diffusion element during a reset sampling and to sample a signal value of the floating diffusion element during a signal sampling.10-28-2010
20100271516IMAGE SENSOR WITH A SPECTRUM SENSOR - There is provided an image sensor with a spectrum sensor including an image sensor region having a plurality of light-detection parts and a spectrum sensor region located in the image sensor region. The present invention provides an advantage of manufacturing a low-cost image sensor with a spectrum sensor. Thus, the image sensor with a spectrum sensor is commercially available to measure the structure and quantity of an organic material in an object in a simple manner.10-28-2010
20120075512IMAGE PICKUP APPARATUS - There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.03-29-2012
20100007779SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGING APPARATUS - A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.01-14-2010
20090021618Image Pick-Up Module - An image pick-up module, in particular for an endoscope or a miniature camera, has an electronic image sensor, which has a plurality of contact fingers that are arranged in at least one row, and a rigid circuit board to which the contact fingers are electrically contact-connected, the image sensor and the circuit board being arranged approximately parallel to one another, and the contact fingers extending along at least one longitudinal side of the circuit board, which extends approximately transversely to the image sensor, and also a flexible multi-core cable which leads from the circuit board in the direction away from the image sensor and whose cores are likewise electrically contact-connected to the circuit board. The cores are contact-connected at contact-connection points on the circuit board which are closer to the image sensor than that side of the circuit board which is remote from the image sensor.01-22-2009
20090021617On-chip time-based digital conversion of pixel outputs - An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.01-22-2009
20090021616IMAGE-TAKING APPARATUS - In response to a release button being pushed, a system control section informs a timing generation section of the number of images to be shot to carry out high-speed continuous shooting. A first image obtained by continuous shooting is stored in a frame memory of an imaging section. While a superimposed image based on continuously shot images is generated by a camera-shake correction section, the first image stored in the frame memory is output to a preprocessing section so that the preprocessing section generates a high-sensitivity image by increasing the gain of an amplifying circuit in the preprocessing section. A signal processing section reads the superimposed image generated by the camera-shake correction section and the high-sensitivity image generated by the preprocessing section and applies image processing to these two images. The system control section causes a recording/reproducing section to record the two images in a recording medium.01-22-2009
20090021615OBJECTIVE HOLDER FOR CAMERA MODULE - An exemplary objective holder for engaging with a PCB substrate having an image sensor and several passive components arranged thereon, includes a base and several continuously connected walls extending from the base. The walls enclose a chamber thereamong for receiving the image sensor and define notches therein for receiving the passive components.01-22-2009
20120081585DRIVE CIRCUIT OF SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM OF SOLID-STATE IMAGE PICKUP DEVICE - There is provided a drive circuit of a solid-state image pickup device capable of generating pulse for vertical scanning the interval of which changes non-linearly and pulse other than the pulse for vertical scanning without increasing a circuit size and communication time for setting an electronic shutter. There is provided a drive circuit of a solid-state image pickup device including a polynomial arithmetic operation unit for carrying out an arithmetic operation of first or higher order of polynomial; an arithmetic operation controller of generating a variable of the polynomial to control an arithmetic operation in the polynomial arithmetic operation unit; and a pulse generator of generating a pulse based on a result of an arithmetic operation on a polynomial of the polynomial arithmetic operation unit.04-05-2012
20120262612ELECTRO OPTICAL MODULATOR, ELECTRO OPTICAL SENSOR, AND DETECTING METHOD THEREOF - The disclosure relates to an electro optical sensor, which comprises a light source generating device, an electro optical modulator, a supporting module, and an image capturing module. The light source generating device emits a light beam. After the electro optical modulator modulates the light beam, the modulated light beam emits onto a subject. The supporting module includes a transparent substrate, supporting the subject and allowing the modulated light beam to incidentally emit into the transparent substrate. The image capturing module converts the light beam reflected from the supporting module into a video signal.10-18-2012
20100328506METHOD AND APPARATUS FOR PROVIDING CURRENT PULSES TO ILLUMINATION SOURCE IN IMAGING SCANNER - A method and apparatus for providing current pulses to the illumination source in an imaging scanner. The method includes: (1) sensing a current supplied from a current port to obtain a current-monitoring signal; (2) controlling a charge current provided to a storage capacitor based on the current-monitoring signal; (3) measuring a parameter related to a voltage across the storage capacitor; and (4) generating a driving current for the illumination source by the illumination driver circuit, if the parameter is above a predetermined threshold value, to provide a driving current for a illumination source in an imaging scanner.12-30-2010
20080297636SOLID-STATE IMAGE PICKUP DEVICE AND SIGNAL PROCESSING METHOD USING SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device having a reduced signal transfer time and a signal processing method using the solid-state image pickup device. A pixel array includes a plurality of light-receiving pixel elements and a plurality of light-blocked pixel elements. A read block reads the output signals of the plurality of light-blocked pixel elements. An AD conversion processing block includes a circuit for summing up the output signals of adjacent light-blocked pixel elements and transferring the signals of the light-blocked pixel elements in a reduced period.12-04-2008
20080297635IMAGING APPARATUS - An imaging apparatus for converting an object image formed by a taking optical system into an image signal, the imaging apparatus including: a solid-state imaging device for converting the object image into the image signal, attached to a case body of the imaging apparatus such that its light receiving plane is movable on a plane crossing an optical axis of the taking optical system; a first thermal conduction member attached to the solid-state imaging device; and a second thermal conduction member connected at one end to the first thermal conduction member and at the other end to a thermal radiation member having a thermal capacity greater than the first thermal conduction member.12-04-2008
20080297634IMAGE PICKUP DEVICE, METHOD OF PRODUCING IMAGE PICKUP DEVICE, AND SEMICONDUCTOR SUBSTRATE FOR IMAGE PICKUP DEVICE - An image pickup device including a semiconductor substrate that is irradiated with light from a first surface side thereof, and reading signal charges generated in the semiconductor substrate in accordance with the light from a second surface side thereof, wherein the semiconductor substrate includes: a photoelectric converting layer that includes a plurality of impurity diffusion layers on the second surface side of the semiconductor substrate, and that produces the signal charges by photoelectric conversion; and an embedded member that includes a light blocking material, and that is embedded in an impurity diffusion layer on a surface side of the photoelectric converting layer, the surface side facing the second surface side of the semiconductor substrate.12-04-2008
20120320244AD CONVERSION CIRCUIT AND SOLID-STATE IMAGING APPARATUS - A comparison section includes an analog signal to be subjected to AD conversion to a reference signal that increases or decreases with the passage of time, and terminates a comparison process at a timing at which the reference signal has satisfied a predetermined condition for the analog signal. A first count section counts a clock signal of a predetermined frequency as a count clock and outputs a count value. A latch section latches the count value output from the first count section. A latch control section enables the latch section at a first timing related to an end of the comparison process and causes the latch section to execute a latch operation at a second timing delayed by a predetermined time from the first timing.12-20-2012
20110216231CMOS Imaging Array with Improved Noise Characteristics - A pixel cell and imaging arrays using the same are disclosed. The pixel cell includes a photodiode that is connected to a floating diffusion node by a transfer gate that couples the photodiode to the floating diffusion node in response to a first gate signal. A shielding electrode shields the floating diffusion node from the first gate signal. An output stage generates a signal related to a charge on the floating diffusion node. In one aspect of the invention, the photodiode is connected to the floating diffusion node by a buried channel, and the shielding electrode includes an electrode overlying the channel and positioned between the transfer gate and the floating diffusion node. The shielding electrode is held at a potential that prevents charge from accumulating under the shielding electrode when the floating diffusion is at the second potential.09-08-2011
20120320243AD CONVERSION CIRCUIT AND IMAGING APPARATUS - A ramp section generates a reference signal. A comparison section compares an analog signal to the reference signal, and terminates a comparison process at a timing at which the reference signal has satisfied a predetermined condition for the analog signal. A main count section performs a count operation and outputs a count value. A latch section latches a second count value at a second timing related to the end of the comparison process corresponding to a second analog signal after latching a first count value at a first timing related to the end of the comparison process corresponding to a first analog signal. A column count section sequentially counts values of bits constituting the second count value retained in the latch section after an initial value has been set on the basis of values of bits constituting the first count value retained in the latch section.12-20-2012
20100060758SOLID-STATE IMAGING DEVICE AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor.03-11-2010
20120086839TIMING ADJUSTMENT CIRCUIT, SOLID-STATE IMAGE PICKUP ELEMENT, AND CAMERA SYSTEM - A timing adjustment circuit includes at least one data line; a phase synchronization circuit that includes a plurality of oscillation delay elements which oscillate an oscillation signal, and that is configured to oscillate the oscillation signal by synchronizing a phase of a feedback clock with a phase of a reference clock; at least one delay circuit that includes a delay element which is disposed on the data line and which is equivalent to one of the plurality of oscillation delay elements, and that is configured to delay data which is to be transmitted on the data line; and a delay adjustment unit configured to adjust an amount of delay of the delay element of the delay circuit in accordance with a signal associated with oscillation of the phase synchronization circuit.04-12-2012
20120327278SOLID STATE IMAGING DEVICE, DRIVING METHOD OF THE SOLID STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid state imaging device includes: multiple unit pixels including a photoelectric converter generating electrical charge in accordance with incident light quantity and accumulating the charge, a first transfer gate transferring the accumulated charge, a charge holding region holding the transferred charge, a second transfer gate transferring the held charge, and a floating diffusion region converting the transferred charge into voltage; an intermediate charge transfer unit transferring, to the charge holding region, a charge exceeding a predetermined charge amount as a first signal charge; and a pixel driving unit setting the first transfer gate to a non-conducting state, set the second transfer gate to a conducting state, transfer the first signal charge to the floating diffusion region, set the second transfer gate to a non-conducting state, set the first transfer gate to a conducting state, and transfer the accumulated charge to the charge holding region as a second signal charge.12-27-2012
20120092537Image Pickup Apparatus - An inflection point variation correction unit 04-19-2012
20120287317Imaging Device - An imaging device of the present invention, which is an imaging device for shooting images or video of a photographic subject, includes: an imaging element for taking an optical image of the photographic subject and generating image data therefrom; a main circuit board that is for conducting signal processing on the image data generated by the imaging element and that includes a main circuit board ground (“GND”) having a ground potential; an imaging element flexible cable that is connected to the main circuit board and on which the imaging element is mounted; a mount for fixing the imaging element and that includes a metallic component; and a metal plate that is connected to the mount and is disposed between the imaging element and the main circuit board. Wherein, the mount and the main circuit board GND are electrically connected.11-15-2012
20120287319LENS BARREL AND IMAGING APPARATUS - When the lens barrel is in the storage state, a part of a lens group and a group cylinder are inserted into an aperture of a diaphragm unit and a shutter blade of a shutter unit is closed for light shielding. With this arrangement, the cylinder length in the storage state is shortened, and the performance degradation of an image sensor and optical components provided on a front side of an image sensor can be prevented as well.11-15-2012
20100182468METHOD FOR THE GENERATION OF AN IMAGE IN ELECTRONIC FORM, PICTURE ELEMENT (PIXEL) FOR AN IMAGE SENSOR FOR THE GENERATION OF AN IMAGE AS WELL AS IMAGE SENSOR - A method for continuously generating a (grayscale) map of a scene in electronic form, characterized by high time resolution and minimal data volume, is presented. The method involves repeated measurement of the instantaneous exposure of the image elements in an image sensor, the start of every exposure measurement being determined autonomously and asynchronously by every image element independently, and hence the redundancy which is typical of synchronous image sensors in the image data to be transmitted being largely suppressed.07-22-2010
20130016261IMAGING LENS SYSTEM, IMAGING OPTICAL DEVICE, AND DIGITAL APPLIANCEAANM Tanaka; HiroakiAACI Sakai-shiAACO JPAAGP Tanaka; Hiroaki Sakai-shi JPAANM Matsusaka; KeijiAACI Osaka-shiAACO JPAAGP Matsusaka; Keiji Osaka-shi JPAANM Sano; EigoAACI Hino-shiAACO JPAAGP Sano; Eigo Hino-shi JPAANM Nishida; MaikoAACI Sakai-shiAACO JPAAGP Nishida; Maiko Sakai-shi JP - A single-focal-length imaging lens system achieves focusing by, while keeping first and third lens groups stationary relative to the image plane, moving a second lens group along the optical axis. The second lens group includes a positive lens element. The third lens group includes an aspherically shaped lens element having an inflection point at a position other than the intersection with the optical axis. The first and second air lenses formed by the intervals between the first and second and between the second and third lens groups have negative and positive refractive powers respectively. The conditional formula 0≦|Fi01-17-2013
20130016259IMAGE SENSOR AND BLACK LEVEL CALIBRATION METHOD THEREOFAANM MENG; Chao-YuAACI Hsinchu CityAACO TWAAGP MENG; Chao-Yu Hsinchu City TWAANM Hsu; WeiAACI Longtan TownshipAACO TWAAGP Hsu; Wei Longtan Township TWAANM Wuen; Wen-ShenAACI Xinfeng TownshipAACO TWAAGP Wuen; Wen-Shen Xinfeng Township TW - An image sensor including a pixel array, a sampling circuit and a black level calibration circuit is provided. The pixel array includes a first optical black area, a second optical black area and an active pixel area. The sampling circuit respectively reads first optical black information, second optical black information and active pixel information from the first optical black area, the second optical black area and the active pixel area. The black level calibration circuit determines a black level offset according to the first optical black information, and determines a black level calibration value for calibrating the active pixel information.01-17-2013
20130016260SOLID-STATE IMAGE PICKUP DEVICEAANM MARUTA; MasanaoAACI KanagawaAACO JPAAGP MARUTA; Masanao Kanagawa JPAANM MAGANE; MitsuoAACI KanagawaAACO JPAAGP MAGANE; Mitsuo Kanagawa JP - A solid-state image pickup device includes plural pixels, a voltage generator that generates a reference voltage, plural comparators that are aligned in one direction, and compare respective voltages output from the pixels with the reference voltage, a counter that counts in tandem with a change in the reference voltage generated by the voltage generator, plural buffer circuits that are connected in series with the counter, and each sequentially receives an output of the counter; plural latch circuits that take in a value input to an input terminal thereof according to respective trigger signals output from the comparators, a common signal line that is commonly connected to respective inputs of the latch circuits, and plural signal lines that are connected to respective outputs of the buffer circuits, and allow the output of the counter to propagate therethrough.01-17-2013
20130021508SOLID STATE IMAGING DEVICE AND DIGITAL CAMERA - A difference between sensitivity of one of focus detection pixels to incident light from an upper right oblique direction and sensitivity of the other focus detection pixel to incident light from an upper left oblique direction is eliminated.01-24-2013
20120242877SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a low-order latch circuit, a state variation detection circuit, and an encode signal latch circuit. The state variation detection circuit sequentially compares pulse signals output from two delay elements of a plurality of delay elements among pulse signals latched by the low-order latch circuit and outputs a state variation detection signal when states of the two pulse signals are different. The encode signal latch circuit latches an encode signal when the encode signal having a state corresponding to a delay element outputting a pulse signal input to the state variation detection circuit is input and the state variation detection signal is input.09-27-2012
20120242875SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.09-27-2012
20080316342ACCURATE GAIN IMPLEMENTATION IN CMOS SENSOR - The claimed subject matter provides systems and/or methods that facilitate combining analog and digital gain for utilization with CMOS sensor imagers. The analog gain can provide coarse gain steps and the digital gain can provide finer gain steps between adjacent coarse analog gain values. Further, since analog gain can suffer from low precision, dispersion, etc., on-chip calibration can be implemented to calibrate the analog and digital gain. For example, a digital amplifier can be calibrated to compensate for differences between actual and nominal analog gains associated with one or more analog amplifiers.12-25-2008
20080246864Electronic Imaging Carousel - An electronic motion picture camera apparatus has more than one imaging sensor arranged around a central axis. Image sensors are exposed individually at a single optical gate by being physically rotated into position. The optical gate is covered during the arrangement's rotation by a coordinated rolling shutter. Image information is transmitted from the rotating arrangement to a stationary receiver. The ability to use multiple and separate sensors allows the usage of higher quality image sensors even when such sensors are not normally conducive to video applications.10-09-2008
20080231736Method, apparatus and system providing an image sensor having pixels with multiple exposures, diodes and gain readouts - A method, apparatus and system are described providing a high dynamic range pixel. Operating conditions, including integration time and sensitivity of different photosensors, and signal processing, including gain settings, are selected to provide multiple possible response curves. An output is selected from the possible response curves and used to provide an overall pixel response curve to increase the pixel dynamic range.09-25-2008
20080225146IMAGING APPARATUS AND IMAGE DATA RECORDING METHOD - An imaging apparatus, includes a photoelectrical conversion element with a rectangular light receiving surface, an image cut-out device that cuts out image data of a cut-out area of a square in which the number of pixels in the horizontal direction is the same as the number of pixels in the vertical direction from the image data of a rectangular image imported by the photoelectrical conversion element, and an image recording device which records the image data compressed by an image compression device or the image data cut out by the image cut-out device.09-18-2008
20080225145SOLID-STATE IMAGE PICKUP APPARATUS AND METHOD FOR DRIVING THE SAME - A solid-state image pickup apparatus includes pixels arranged in a matrix, each pixel converting incident light into an analog electrical signal and outputting the analog electrical signal; AD converters in correspondence with individual columns, each AD converter converting the analog electrical signal from a corresponding pixel into a digital signal and outputting the digital signal from an output terminal; register circuits in correspondence with the individual columns, each register circuit receiving at an input terminal the digital signal output from the output terminal of a corresponding AD converter and storing the digital signal; and connection units, each of which connects the output terminal of a corresponding AD converter for one column to the input terminal of a corresponding register circuit for a different column or to connect the output terminal of a corresponding register circuit for one column to the input terminal of a corresponding register circuit for a different column.09-18-2008
20080225144Multi-purpose image sensor circuits, imager, system and method of operation - Methods, devices, and systems for image sensors are disclosed that include a multi-mode circuit that can be configured for operating as an imaging pixel and a memory. The multi-mode circuit includes a photo-detector for collecting electrons generated by radiation impinging on the photo-detector. A transfer gate is configured for transferring the collected electrons from the photo-detector to a floating diffusion node when the transfer gate is enabled. A write circuit receives and stores a multi-value voltage on the floating diffusion node and a read circuit is configured for reading a state of the floating diffusion node. The state of the floating diffusion node corresponds to the amount of transferred electrons in an image mode or the multi-value voltage in a memory mode. The semiconductor image sensor may be included in as part of an imaging system that includes a memory for storing a digital representation of an image.09-18-2008
20110261239COLLIMATOR BONDING STRUCTURE AND METHOD - An image sensor is disclosed that includes a solid state semiconductor imager having a metallized catch pad, a collimator having a metallized layer that faces a sensor anode, the metallized layer joined with the metallized catch pad to form a metal bond between the solid state semiconductor imager and the collimator. Methods of making the joined solid state semiconductor imager and collimator assembly are also disclosed.10-27-2011
20130176469Imaging Lens, Imaging Device and Portable Terminal - Provided is a small-sized five-element image pickup lens which ensures a sufficient lens speed of about F2 and exhibits various aberrations being excellently corrected. The image pickup lens is composed of, in order from the object side, a first lens with a positive refractive power, including a convex surface facing the object side; a second lens with a negative refractive power, including a concave surface facing the image side; a third lens with a positive or negative refractive power; a fourth lens with a positive refractive power, including a convex surface facing the image side; and a fifth lens with a negative refractive power, including a concave surface facing the image side. The image-side surface of the fifth lens has an aspheric shape, and includes an inflection point at a position excluding an intersection point with the optical axis.07-11-2013
20130176467Image Capturing Device, Dust Removal System and Vibrating Dust Removal Method Thereof - An image capturing device, a dust removal system and a vibrating dust removal method thereof. The image capturing device comprises an image sensor, a vibrating dust removal unit, an optical component adapter, a detector, a touch screen and a controller. The image sensor receives an optical signal and converts the optical signal into an image signal. The vibrating dust removal unit produces a vibration to remove dust from the image sensor. The detector detects whether a detachable optical component is connected to the optical component adapter and generates a detecting signal. The touch screen displays the image signal and allows a user to designate a dust-removal position. The controller receives the detecting signal to enter into a dust-removal mode or controls the frequency or amplitude of the vibration produced by the vibrating dust removal unit according to the dust-removal position.07-11-2013
20130176468SOLID-STATE IMAGE SENSOR, DRIVING METHOD THEREOF, AND CAMERA - A solid-state image sensor, comprising a pixel array complying with a Bayer array, a first signal processor configured to process each of red-pixel and blue-pixel signals output from the pixel array, a second signal processor configured to process each of green-pixel signals output from the pixel array, and a control unit configured to control the pixel array, the first signal processor, and the second signal processor, wherein the solid-state image sensor selects a readout method, by changing timings of the control signals, from a progressive method, an interlace method, and a pseudo-progressive method.07-11-2013
20080218618Digital Image Capturing Device with Scan Type Flash - The invention relates to a digital image capturing device (09-11-2008
20080218616Method and apparatus for video acquisition - A system for video acquisition has a mechanism for sensing the integrated brightness on an image sensor. When the integrated brightness at a sensor element reaches a predetermined level, a message including the spatial position of the sensor element is sent. The message may also include a timestamp indicative of the time of the message. As such, the video acquisition provides a sequence of messages. The integrated brightness can be obtained from counting the photons or measuring the electrical charges produced by the photons. When the message has been generated and sent, the photon counter or electrical charge accumulator is reset to an initial value, typically zero. It is also possible to provide the integrated brightness as sensed at a master sensor element so that the sending of messages is also based on the integrated brightness at the master sensor element.09-11-2008
20080218615Apparatus and method for stabilizing image sensor black level - A black clamp stabilization circuit for an image sensor utilizes a mixed-signal SoC block comprising sub-blocks to dynamically and precisely adjust the black level based on comparison to a reference black level. The black level adjustments include a first level regulation using digital control of an analog signal in a feedback loop that includes a programmable gain amplifier and high-resolution A/D converter. By applying the black clamping in the analog domain, dynamic range is extended. Additional black level regulation is subsequently performed in the digital domain to differentially eliminate line noise and column noise generated within the imaging System-on-Chip. By providing information between the sub-blocks, the algorithms can converge more quickly. The technique enables multiple signal paths to separately handle individual colors and to increase imaging data throughput.09-11-2008
20130093932ORGANIC PIXELS INCLUDING ORGANIC PHOTODIODE, MANUFACTURING METHODS THEREOF, AND APPARATUSES INCLUDING THE SAME - Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.04-18-2013
20130093931METHOD FOR ACQUIRING DATA WITH AN IMAGE SENSOR - To avoid reset noise in a CMOS chip for direct particle counting, it is known to use Correlative Double Sampling: for each signal value, the pixel is sampled twice: once directly after reset and once after an integration time. The signal is then determined by subtracting the reset value from the later acquired value, and the pixel is reset again. In some embodiments of the invention, the pixel is reset only after a large number of read-outs. Applicants realized that typically a large number of events, typically approximately 10, are needed to cause a full pixel. By either resetting after a large number of images, or when one pixel of the image shows a signal above a predetermined value (for example 0.8×the full-well capacity), the image speed can be almost doubled compared to the prior art method, using a reset after acquiring a signal.04-18-2013
20130093930SOLID-STATE IMAGING DEVICE, CAMERA MODULE, AND ILLUMINANCE DETECTION METHOD - According to one embodiment, a solid-state imaging device includes a luminance integrating unit, a luminance observation value calculating unit, and an illuminance value conversion unit. The luminance integrating unit integrates a luminance value detected for every pixel. The luminance observation value calculating unit calculates a luminance observation value based on an integration result in the luminance integrating unit. The luminance observation value is an observation result of the luminance for an entire imaging screen. The illuminance value conversion unit converts the luminance observation value to an illuminance value. The luminance integrating unit integrates the luminance value discriminated in accordance with a condition set with respect to a luminance level.04-18-2013
20130100324METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP ELEMENT, SOLID-STATE IMAGE PICKUP ELEMENT, IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS, SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - Disclosed herein is a method of manufacturing a solid-state image pickup element having a lens provided above a light receiving portion. The manufacturing method includes: forming a lens base material layer composing the lens; forming an intermediate film having a thermal expansion coefficient larger than that of a resist on the lens base material layer; forming the resist in contact with the intermediate film; forming the resist into a lens shape by thermal reflow; and transferring the lens shape of the resist to the lens base material layer by etching, thereby forming the lens.04-25-2013
20130100323IMAGE FORMING OPTICAL SYSTEM, IMAGE PICKUP APPARATUS USING THE SAME, AND INFORMATION PROCESSING APPARATUS - An image forming optical system of four lenses includes in order from an object side, a first lens having a positive refractive power, which is a biconvex lens, a second lens having a negative refractive power, of which, an image-side surface is a concave surface, a third lens having a positive refractive power, which is meniscus-shaped with a concave surface directed toward the object side, a fourth lens having a negative refractive power, of which, an image-side surface is a concave surface, and an aperture stop which is disposed nearest to the object side. The image forming optical system satisfies predetermined conditional expressions.04-25-2013
20130113965IMAGING APPARATUS AND IMAGING METHOD - An imaging apparatus includes a solid-state imaging device that has a plurality of pairs of a first photoelectric conversion element and a second photoelectric conversion element, which have different spectral sensitivity characteristics, respectively. A wavelength range where the first photoelectric conversion element of each pair mainly has a spectral sensitivity and a wavelength range where the second photoelectric conversion element of the pair mainly has a spectral sensitivity fall within wavelength ranges of specific colors of visible light respectively. The plurality of pairs include a plurality of types of pairs having different specific colors. A half-width in a spectral sensitivity characteristic of the second photoelectric conversion element of each pair is wider than a half width in a spectral sensitivity characteristic of the first photoelectric conversion element of the pair.05-09-2013
20110267512SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.11-03-2011
20110267511CAMERA - A camera includes an image sensor that includes a first pixel row at which a plurality of first pixels that output focus adjustment signals are disposed, and second pixel rows each made up exclusively with a plurality of second pixels that output image data generation signals; and an interpolation processing device that executes, when outputs from a plurality of pixel rows are provided as a combined output according to a predetermined combination rule, interpolation processing for an output from a specific second pixel row which would be combined with an output from the first pixel row according to the predetermined combination rule, by using the output of the specific second pixel row and a combined output of second pixel rows present around the specific second pixel row.11-03-2011
20130128085SOLID-STATE IMAGE PICKUP ELEMENT, DISTANCE DETECTING APPARATUS INCLUDING SOLID-STATE IMAGE PICKUP ELEMENT, AND CAMERA INCLUDING DISTANCE DETECTING APPARATUS - A solid-state image pickup element includes a pixel and a signal detecting unit. The pixel has at least two photoelectric conversion units including a first photoelectric conversion unit and a second photoelectric conversion unit in a semiconductor. The first photoelectric conversion unit has a higher impurity density than the second photoelectric conversion unit and is configured to allow the transfer of a charge occurring in the second photoelectric conversion unit to the first photoelectric conversion unit. The signal detecting unit commonly detects the charge amount in the first photoelectric conversion unit and the second photoelectric conversion unit.05-23-2013
20130141617SOLID-STATE IMAGING DEVICE, CAMERA, AND DESIGN METHOD FOR SOLID-STATE IMAGING DEVICE - A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.06-06-2013
20110273600Optical Imaging Apparatus And Methods Of Making The Same - The present invention provides optical imaging apparatus comprising solid state sensing elements and optical components operable to be manufactured and assembled at the wafer level.11-10-2011
20110273599IMAGE-CAPTURING DEVICE AND IMAGING APPARATUS - An image-capturing device includes: a first image sensor equipped with first and second image-capturing pixels and first focus detection pixels, each of which receives one of light fluxes formed by splitting subject light having passed through an optical system, the first and the second image-capturing pixels generating first and second color signals respectively and the first focus detection pixels outputting focus detection signals indicating a state of focus detection pertaining to the optical system; and a second image sensor equipped with third image-capturing pixels and second focus detection pixels, each of which receives another light flux, the third image-capturing pixels generating third color signals and the second focus detection pixels outputting focus detection signals, wherein: when n represents a quantity of the first image-capturing pixels, quantities of the second and the third image-capturing pixels, and the first and the second focus detection pixels are n, 2n, 2n and 2n respectively.11-10-2011
20080198250Solid-state image capturing device, smear charge removing method and digital still camera using the same - In a solid-state image capturing device including a pixel array arranged in a row direction and a column direction orthogonal thereto, and a vertical register having a plurality of transfer electrodes which serves to read signal charges Qa, Qb, . . . generated by light receipt of each of pixels A, B, . . . and to sequentially transfer the signal charge in the column direction upon receipt of a transfer pulse, an electric potential well for a smear charge is generated and an unnecessary charge q in the vertical register is collected into the electric potential well for a smear charge before the signal charge is read from the pixels A, B, . . . onto the vertical register (a timing t08-21-2008
20080198249IMAGE SENSOR DEVICE - An object of the present invention is to provide a small-sized image sensor device having high precision of moving an object to be moved. The image sensor device includes: a fixed unit; a movable unit including an image sensor; a beam unit fixed to the fixed unit and movably supporting the movable unit; a driving unit for applying a driving force for moving the movable unit; and a wire unit provided for the beam unit and electrically connecting the image sensor and an external circuit.08-21-2008
20100091148System and method for fixing an image sensor to a beamsplitter - Exemplary embodiments of the present invention relate to a method for fixing an image sensor to a beamsplitter. An exemplary method comprises placing a first fixative agent comprising an ultraviolet adhesive between the image sensor and the beamsplitter and positioning the image sensor relative to the beamsplitter. The position of the image sensor is initially fixed relative to the beamsplitter by the first fixative agent. The exemplary method further comprises securing the image sensor to the beamsplitter with a second fixative agent.04-15-2010
20110221943SOLID IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF DRIVING SOLID IMAGE PICKUP DEVICE - The solid image pickup device of the present invention comprises a photoelectric conversion part, a charge-voltage conversion part for converting electric charges from the photoelectric conversion part to voltage signals, a signal amplifier for amplifying the voltage signals generated in the charge-voltage conversion part, charge transfer means for transferring photo-electric charges from the photoelectric conversion part to the charge-voltage conversion part, and means for applying a certain voltage to a charge-voltage conversion part, wherein at least two readout operations for reading out the photo-electric charges accumulated during a period of accumulating photo-electric charges in the photoelectric conversion part via a signal amplifier.09-15-2011
20110221941SOLID-STATE IMAGING DEVICE APPLIED TO CMOS IMAGE SENSOR - According to one embodiment, a solid-state imaging device includes a pixel array, two signal lines and a row scanning circuit. The row scanning circuit simultaneously renders conductive, by the first read-out row scanning circuit and the second read-out row scanning circuit, the two transfer transistors, which are connected to two photoelectric conversion elements do not share a floating diffusion portion neighboring in the column direction, thereby reading out signals in parallel from the photoelectric conversion elements of the pixels of two rows of an odd-numbered row and an even-numbered row.09-15-2011
20110228151PHOTOELECTRIC CONVERSION FILM-STACKED SOLID-STATE IMAGING DEVICE WITHOUT MICROLENSES, ITS MANUFACTURING METHOD, AND IMAGING APPARATUS - There are provided a semiconductor substrate; a photoelectric conversion film stacked on a layer that is disposed on the light incidence side of the semiconductor substrate; signal reading unit formed in a surface portion of the semiconductor substrate, for reading out, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film according to incident light quantities; a transparent substrate bonded to a layer that is disposed on the light incidence side of the photoelectric conversion film with a transparent resin as an adhesive; and electric connection terminals which are connected to the signal reading unit by interconnections and which penetrate through the semiconductor substrate and are exposed in a surface, located on the opposite side to the side where the photoelectric conversion film is provided, of the semiconductor substrate.09-22-2011
20130147994Imaging System And Method Having Extended Depth of Field - An imaging system and method having a selected depth of field include an imaging lens for forming images of an object, the imaging lens having chromatic aberration and a color image sensor for receiving the images of the object. The color image sensor has a selected spectral response, the selected spectral response of the color image sensor defining a selected first center wavelength, a selected second center wavelength and a selected third center wavelength, wherein the selected first center wavelength is larger than the selected second center wavelength and the selected second center wavelength is larger than the selected third center wavelength. The selected spectral response defines the depth of field of the imaging system. A difference between the selected first center wavelength and the selected third center wavelength is greater than 150 nm.06-13-2013
20100289931SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels for converting analog image signals from the pixels into digital signals including a higher digit bit and a lower digit bit in time series. The A/D converter includes a first holding unit for holding the higher digit bit of the digital signal, a second holding unit for holding the lower digit bit of the digital signal, a third holding unit for holding the digital signal from the first holding unit, and a fourth holding unit for holding the digital signal from the second holding unit. A first pair including the first and third holding units, and a second pair including the second and fourth holding units are arranged in a direction along the column of the two-dimensional array of pixels.11-18-2010
20090122169HIGHLY MINIATURIZED, BATTERY OPERATED, DIGITAL WIRELESS CAMERA USING PROGRAMMABLE SINGLE CHIP ACTIVE PIXEL SENSOR (APS) DIGITAL CAMERA CHIP - A miniaturized camera which is programmable and provides low power consumption. An active pixel image sensor used in the highly miniaturized camera provides improved imaging functionality as well as reduced power consumption, extending the possible life time of the camera system. The spread spectrum nature of transmission and reception improves data integrity as well as data security. The ability of the highly miniaturized wireless camera to receive commands as well as transmit image data provides improved functionality and a variable rate of power consumption to be set according to the application and needs of the situation.05-14-2009
20120274821IMAGING APPARATUS - An imaging apparatus for performing efficient signal processing depending on the operational mode. In the finder mode, a CCD interface 11-01-2012
20120274820COMPACT LABEL FREE IMAGING SYSTEM - A compact microplate imaging system, including: a tunable light source; a lens ensemble to collimate the light source onto the microplate and to transmit light that is reflected from the microplate; a beam splitter to divert a portion of the reflected light; an imaging lens to collect diverted light and to produce an optical image of the at least one sensor of the microplate; and an image sensor for receiving the optical image of the at least one sensor of the microplate. A method for interrogating a sensor using the compact microplate imaging system, as further defined herein, is also disclosed.11-01-2012
20100309354SOLID-STATE IMAGE PICKUP DEVICE - A cover member fixed to a pickup element has a non-vertical surface and an upright surface and satisfies H12-09-2010
20100309353SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DEVICE - According to one embodiment, a solid-state imaging device includes a substrate, a lens, a lens holder, and a metal shield. The substrate includes a pixel region having a first well and has a second well at a periphery thereof, the second well being independent of the first well. The lens is provided above the pixel region in the substrate. The lens holder holds the lens. The metal shield is provided on the substrate and the lens holder and electrically connected to the second well of the substrate12-09-2010
20100309352SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a photoelectric conversion section, first circuit, second circuit, and third circuit. The photoelectric conversion section generates signal charge corresponding to the intensity of the irradiation light. The first circuit reads the signal charge generated by the photoelectric conversion section. The second circuit detects that the signal charge in the photoelectric conversion section has overflowed. The third circuit produces a signal corresponding to the time elapsed from the start of generation of the signal charge in the photoelectric conversion section, and holds and reads the signal at a timing at which the overflow has been detected by the second circuit.12-09-2010
20110242376SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS AND CAMERA MODULE - A solid-state imaging device includes a photoelectric conversion portion, a charge-receiving portion to which charges are transferred from the photoelectric conversion portion, and a light control film having a reverse tapered opening over the photoelectric conversion portion to reduce the intensity of diffracted light diffusing to regions other than the photoelectric conversion portion.10-06-2011
20110242375IMAGE SENSOR AND OPERATING METHOD - The present invention relates to an image sensor, in particular a CMOS image sensor, for electronic cameras, having a plurality of light-sensitive pixels arranged in rows and columns, wherein all or at least some of the pixels of a column are connected to a respective common column line, and wherein the image sensor has a signal preprocessing device for one or more of the column lines to process a exposure signals generated by the pixels which can be applied to the respective column line. The image sensor is made selectively to apply one of at least two test input signals to the column lines.10-06-2011
20110234869SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS - A solid-state image sensor according to the present invention includes: a semiconductor layer (09-29-2011
20110234868PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion apparatus comprises multiple photoelectric conversion portions (09-29-2011
20110234867SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a VOB region, an effective pixel region, a comparator, a holder, and a drive controller. The effective pixel region outputs the reset signal, and an image signal to the vertical signal line. The comparator compares the reset signal transferred from the VOB region through the vertical signal line with a reference signal, and determining whether the reset signal is within a digital level range. The holder is capable of holding either a value representing a first result or a value representing a second result, according to a determination result of the comparator. The drive controller varies a pulse timing period according to the value held by the holder, and automatically sets the period when the reset signal is read from the effective pixel region to the vertical signal line. A voltage of the vertical signal line is clamped in the period.09-29-2011
20110234866PHOTOELECTRIC CONVERSION ELEMENT UNIT AND IMAGE PICKUP APPARATUS - A photoelectric conversion element unit includes a package includes a package including a photoelectric conversion element configured to perform a photoelectric conversion for an optical image of an object, a substrate mounted with an electronic component that includes a drive circuit configured to drive the photoelectric conversion element and a signal processing circuit configured to process a signal from the photoelectric conversion element, and a fixing plate having an opening, wherein the package and the electronic component are adjacent to each other in a direction orthogonal to an optical axis in the opening, and the package and the substrate are fixed onto the fixing plate.09-29-2011
20120281125SOLID STATE IMAGE PICK-UP DEVICE - The solid state image pick-up device comprises a chip wherein an object to be photographed is put directly on the back surface of the chip, a light incident on the object enters the inner portion of the chip, signal electric charges generated in the inner portion of the chip by the light, the signal electric charges are collected in a photo detective region and the photo detective region has a barrier diffusion layer adjacent thereto so as to collect the signal electric charges effectively. The above-mentioned structure of the solid state image pick-up device can provide superior features that the chip of the solid state image pick-up device is protected from the deterioration of elements included in the chip and the destruction of the elements by Electro Static Discharge, resulting in the reliability improvement of the chip.11-08-2012
20120281124SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, AND CAMERA - A solid-state imaging device according to the present invention includes: first vertical transfer units; transfer control units disposed in correspondence with the first vertical transfer units on m columns, and each configured to selectively transfer the signal charges transferred by any of the corresponding first vertical transfer units; and second vertical transfer units each configured to transfer the signal charges transferred by a corresponding one of the transfer control units. Each of the second vertical transfer units is disposed for horizontal transfer electrodes forming a transfer packet of a horizontal transfer unit and has a region in which a transfer width tapers from the corresponding one of the transfer control units toward the horizontal transfer unit. Moreover, each of the second vertical transfer units is provided with a vertical transfer electrode independent of vertical transfer electrodes of the first vertical transfer units and the transfer control units.11-08-2012
20130182158IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type.07-18-2013
20130155299FREQUENCY SELECTIVE IMAGING SYSTEM - An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).06-20-2013
20130182155SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state image sensor has a photoelectric conversion element array, a light collecting optical element array, wavelength-selective elements and a reflecting unit. Wavelength-selective elements pass light of the color which is to be detected, and reflect other colors. The reflecting unit further reflects the light that has been reflected by the wavelength-selective elements. The cell includes photoelectric conversion elements for three different light colors. A microlens serving as a light collecting optical element is arranged corresponding to the cell. The reflecting unit includes at least a first reflecting surface and a second reflecting surface. The first reflecting surface faces the wavelength-selective elements. In every cell, the second reflecting surface is enclosed between wavelength-selective elements and the first reflecting surface.07-18-2013
20130182156SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device which includes a focus detection pixel that has a light shielding film, which is formed on a light receiving surface of a photoelectric conversion portion and shields light in a part of the light receiving surface, performs pupil division and photoelectric conversion of a received light flux and acquires a phase difference detection signal, where the light shielding film is formed avoiding a gate electrode of a reading gate portion to read a signal charge from the photoelectric conversion portion.07-18-2013
20130182157SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING THE SAME - A solid-state imaging apparatus includes: a plurality of pixels; a reference signal generating circuit configured to generate a ramp signal; a counter performing a counting operation according to the changing of the ramp signal; a read out circuit having a comparator comparing a signal read out from the pixel with the ramp signal, and converting an analog signal outputted from the pixel to a digital signal; and a control circuit configured to adjust a reset potential to be used when the comparator is reset, wherein the control circuit obtains a conversion value derived by converting an analog signal derived of a reset level of the pixel to a digital signal, and adjusts a reference potential based on the conversion value to make a dynamic range of A/D conversion follow the fluctuation of the reset level of the pixel.07-18-2013
20130182159IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An image pickup apparatus according to one or more embodiments includes a power line and first through fourth photodiodes. The first, second, and third photodiodes are arranged along a first direction so that the first photodiode is adjacent to the second photodiode, and the second photodiode is adjacent to the third photodiode. The power line includes a first conductor disposed along the first direction and a second conductor disposed along a second direction that intersects the first direction. The second conductor is disposed on a region between the second and third photodiodes. First and second transistors corresponding to the first and second photodiode, respectively, are connected to the power line. The fourth photodiode is disposed adjacent to the second photodiode in the second direction. A third transistor corresponding to the fourth photodiode is connected to the power line.07-18-2013
20110285882Camera with volumetric sensor chip - A camera using a volumetric sensor chip as an image sensor is proposed. The volumetric sensor chip has three or more sensor areas shaped like simple convex polygons. Light diverting elements are arranged at edges between neighboring sensor areas of the volumetric image sensor chip.11-24-2011
20110292259POWER SUPPLY CIRCUIT, INTEGRATED CIRCUIT DEVICE, SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC APPARATUS - A power supply circuit includes: a comparison unit that compares a reference voltage and an input voltage and outputs a voltage difference signal; an output voltage generating unit that generates an output voltage based on the voltage difference signal; an input voltage generating unit that generates the input voltage based on the output voltage; a current output unit that outputs a reference current; a resistor that generates the reference voltage in accordance with the reference current; and a capacitor that is connected to the resistor in parallel and is charged by the reference current, wherein the current output unit allows the reference current at the time of startup to be lower than the reference current during an operation.12-01-2011
20130120623IMAGE METHOD AND APPARATUS - Disclosed is an imaging sensor. The image sensor may comprise a plurality of pixels. At least one of the plurality of pixels may comprise a plurality of photo-diodes, wherein the plurality of photo-diodes share a portion of a detecting. The detecting circuit may comprise at least one of a reset transistor, a source follower, a selective transistor and a Floating Diffusion (FD) node.05-16-2013
20130120622SOLID-STATE IMAGING DEVICE, IMAGING SYSTEM, AND METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE - In a solid-state imaging device which includes column analog-to-digital conversion circuits (ADCs) for converting pixel signals output from pixels into digital signals, each of the column ADCs includes a comparator which outputs a result of voltage comparison (comparison result signal) between the voltage of the pixel signal and an analog ramp voltage; a column counter which counts a column counter clock signal, which is either a clock signal or a phase-shifted clock signal, and stores a value represented by upper bits of a count value at a time of change in the comparison result signal; and a first latch unit which stores a value represented by lower bits of the count value. A second latch unit stores the value stored in the first latch unit.05-16-2013
20110310279PROVIDING MULTIPLE VIDEO SIGNALS FROM SINGLE SENSOR - A method for using a capture device to capture at least two video signals corresponding to a scene, includes: providing a two-dimensional image sensor having a plurality of pixels; reading a first group of pixels from the image sensor at a first frame rate to produce a first video signal of the image scene; reading a second group of pixels from the image sensor at a second frame rate for producing a second video signal; and using at least one of the video signals for adjusting one or more of the capture device parameters.12-22-2011
20110310278SYSTEMS AND METHODS FOR ADAPTIVE CONTROL AND DYNAMIC RANGE EXTENSION OF IMAGE SENSORS - Systems and methods are provided for obtaining adaptive exposure control and dynamic range extension of image sensors. In some embodiments, an image sensor of an image system can include a pixel array with one or more clear pixels. The image system can separately control the amount of time that pixels in different lines of the pixel array are exposed to light. As a result, the image system can adjust the exposure times to prevent over-saturation of the clear pixels, while also allowing color pixels of the pixel array to be exposed to light for a longer period of time. In some embodiments, the dynamic range of the image system can be extended through a reconstruction and interpolation process. For example, a signal reconstruction module can extend the dynamic range of one or more green pixels by combining signals associated with green pixels in different lines of the pixel array.12-22-2011
20120008026SOLID-STATE IMAGING DEVICE, METHOD OF MAKING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.01-12-2012
20130194468SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus wherein an FD capacitor value is variable without increasing the number of elements. There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion elements arranged in a horizontal direction and a vertical direction, for generating an electric charge by photoelectric conversion; a plurality of transfer transistors each connected to each of the photoelectric conversion elements, for transferring the electric charge generated by the plurality of photoelectric conversion elements; a plurality of floating diffusion regions for holding the electric charge transferred by the transfer transistors; a plurality of amplifiers each connected to each of the floating diffusion regions, for amplifying a signal based on the electric charge in the plurality of floating diffusion regions; and a connecting unit for connecting and disconnecting between the plurality of floating diffusion regions.08-01-2013
20130194467ZOOM LENS WITH HIGH OPTICAL PERFORMANCE AND IMAGE PICKUP APPARATUS HAVING THE SAME - A zoom lens comprises a first lens unit having a positive refractive power, a second lens unit having a negative refractive power, and a rear group including at least two lens units and having a positive refractive power as a whole, in order from an object side to an image side. An interval of each of the lens units changes in a zoom operation, the rear group includes a lens unit R having a positive refractive power at the most image side, the lens unit R includes a lens having a concave surface at the image side and having an aspherical surface shape where a negative refractive power becomes stronger with increasing distance from an optical axis, and focal lengths f08-01-2013
20130194466INTERCHANGEABLE ZOOM LENS ACTUATOR WITH AUTO-FOCUS ADJUSTMENT - The subject matter disclosed herein relates to an optical module that includes interchangeable lenses to adjust a zoom level or focus of the optical module.08-01-2013
20130194465ZOOM LENS AND IMAGE PICKUP APPARATUS EQUIPPED WITH THE SAME - A zoom lens includes a first lens unit having positive refractive power, a second lens unit having negative refractive power, a third lens unit having positive refractive power, and a fourth lens unit having positive refractive power. During zooming from a wide-angle end to a telephoto end, each lens unit moves so that a distance between the first lens unit and the second lens unit increases, and a distance between the second lens unit and the third lens unit decreases. Each of the first lens unit, the second lens unit, and the third lens unit consists of a single positive lens and a single negative lens, and the fourth lens unit consists of a single positive lens. Focal lengths of the entire zoom lens at the wide-angle end and the telephoto end and focal lengths of the first lens unit and the second lens unit are appropriately set.08-01-2013
20130194464IMAGE PICKUP APPARATUS AND CAMERA MODULE - An image pickup apparatus includes an optical device, a transparent conductive film, an electrode pad, and a penetrating electrode. In the optical device, an optical element area for receiving light is formed on a first surface side of a substrate, and an external connection terminal is formed on a side of a second surface opposite to the first surface of the substrate.08-01-2013
20130201371IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND SOLID-STATE IMAGING DEVICE - According to one embodiment, a noise reduction circuit includes a noise reduction filter for converting a pixel value of a pixel of interest through a calculation that uses the pixel value of the pixel of interest and pixel values of adjacent pixels. The noise reduction filter is set, for the calculation, with a heavier weighting for vertically adjacent pixels than that for horizontally adjacent pixels. The horizontally adjacent pixels are adjacent pixels that are located in parallel with the pixel of interest in a horizontal direction. The vertically adjacent pixels are adjacent pixels that are located in parallel with the pixel of interest in a vertical direction.08-08-2013
20130201370ZOOM LENS AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A zoom lens includes, in order from an object side to an image side, a first lens unit having a positive refractive power, a second lens unit having a negative refractive power, and a rear lens group including lens units and as a whole having a positive refractive power. Distances between the lens units change during zooming. The second lens unit includes, in order from the object side to the image side, a negative lens component and a cemented lens including a negative lens component and a positive lens component. The second lens unit includes at least five lens components. A focal length f08-08-2013
20130201372PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.08-08-2013
20130100325ZOOM LENS AND IMAGE PICKUP APPARATUS HAVING THE SAME - A zoom lens includes, in order from an object side to an image side, a front lens group including a first lens unit having positive refractive power and a second lens unit having refractive power, and a rear lens group including a plurality of lens units. The second lens unit includes a reflective member configured to bend an optical path. At least the first lens unit and at least two lens units of the rear lens group move during zooming. The second lens unit does not move for zooming. A reflection unit including the reflective member moves perpendicularly to an optical axis of the front lens group during retraction. At least part of the front lens group is retractable into a space caused by movement of the reflection unit. A focal length f04-25-2013
20130100322SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor has a plurality of pixel units, each pixel unit including a plurality of pixels, and a charge-voltage converter shared by the plurality of pixels. The sensor includes a structural portion including a plurality of wiring layers, an interlayer insulating film, and light waveguides configured by embedding, in portions of the interlayer insulating film located above the photoelectric converters, a material having a refractive index higher than that of the interlayer insulating film. A dummy pattern is formed in the structural portion to reduce a difference between a sensitivity of a first pixel and that of a second pixel, which is produced by a difference between a structure in a periphery of the light waveguide arranged above the photoelectric converter of the first pixel and that of the second pixel.04-25-2013
20120300103Image Detecting Module and Lens Module - An image detecting module includes a socket, a circuit board, an image sensor, an elastic element, a filter and a holder. The socket comprises an inner circumference wall along a main axis for defining an inner space and a platform that extended from the inner circumference wall. Pluralities of mounting holes are provided on the holder and pluralities of protrusions are provided on the socket; thus the elastic element and the filter could be fixed between the platform and the holder by fitting the protrusions into the mounting holes.11-29-2012
20120300102PHOTOELECTRIC CONVERSION APPARATUS AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.11-29-2012
20130208155ZOOM LENS AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A zoom lens includes an imaging lens unit having a positive refractive power and provided nearest to an image-side end, and a focusing lens unit having a positive refractive power and provided on an object side of the imaging lens unit. A distance between the imaging lens unit and the focusing lens unit changes during zooming. The focusing lens unit moves during focusing. The imaging lens unit includes, at a position thereof nearest to an object-side end, a negative meniscus lens component that is concave on the object side thereof.08-15-2013

Patent applications in class Solid-state image sensor

Patent applications in all subclasses Solid-state image sensor