| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 338306000 | WITH BASE EXTENDING ALONG RESISTANCE ELEMENT | 70 |
| 20110285498 | SURFACE-MOUNTED RESISTOR AND SUBSTRATE FOR MOUNTING THE SAME THEREON - A surface-mounted resistor includes a flat-type base member having a first surface, a second surface, and a lateral surface. Each of the first and second surfaces has a rectangular shape. The surface-mounted resistor also includes a resistance element faulted on the first surface; a pair of internal electrodes formed on both ends of the resistance element by being partially superposed with the resistance element; and a pair of external electrodes. Each of the external electrodes has a first bended portion having an L-shape formed by an internal electrode connection portion and a lateral portion, and a second bended portion having an L-shape formed by the lateral portion and a substrate connection portion. The internal electrode and the internal electrode connection portion are fixed to each other through a conductive fixation material, and a position of the base member is biased in a thickness direction toward the first bended portion. | 11-24-2011 |
| 20110241820 | MEANDER RESISTOR - The present invention relates in general to the field of integrated circuits, and more specifically to a meander resistor. Basically, a meander resistor can be considered as a bar resistor with the exception of the corner squares (right-angle bends). The Electrostatic Discharge (ESD) sensitivities of on-chip resistors can be a problem for both electronic manufactures and electronic component users. As others components, passive devices are known to be susceptible to ESD events. The context of this invention is to improve the reliability of the resistors during an ESD event. An ESD stress means that high current and high voltage levels are applied to the device. The device has to be able to dissipate this energy without failure. | 10-06-2011 |
| 20110018677 | CHIP RESISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a chip resistor includes the following steps. A resistor layer is formed on an obverse surface of a material substrate. A plurality of substrate sections are defined in the material substrate by forming, in the obverse surface of the material substrate, a plurality of first grooves each of which is elongated in a first direction. A conductor layer is formed in each of the first grooves. The substrate sections are cut along lines extending in a second direction different from the first direction. | 01-27-2011 |
| 20090322467 | RESISTOR, PARTICULARLY SMD RESISTOR, AND ASSOCIATED PRODUCTION METHOD - The invention relates to a resistor ( | 12-31-2009 |
| 338307000 | Resistance element and/or terminals printed or marked on base | 12 |
| 20090040009 | ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - To provide an electronic component including a resistor element that can be efficiently produced with a range of resistances, and a method for manufacturing the electronic component, the electronic component includes a pair of terminals, and a resistor element disposed between the terminals. The resistor element includes at least two resistive portions (hereinafter referred to as a first resistive portion and a second resistive portion) that are continuously disposed. The first resistive portion includes a plurality of first dots overlapping one another. The second resistive portion includes a plurality of second dots having a different electric resistance from that of the first dots overlapping one another. | 02-12-2009 |
| 20120223805 | IN-MOLDED RESISTIVE AND SHIELDING ELEMENTS - An article of manufacture having an in-molded resistive and/or shielding element and method of making the same are shown and described. In one disclosed method, a resistive and/or shielding element is printed on a film. The film is formed to a desired shape and put in an injection mold. A molten plastic material is introduced into the injection mold to form a rigid structure that retains the film. | 09-06-2012 |
| 20120223804 | METAL AND SEMIMETAL SENSORS NEAR THE METAL INSULATOR TRANSITION REGIME - This invention generally relates to sensors made of granular thin films in the discontinuous phase. More particularly, the invention relates to microbolometers and displacement sensors fabricated from thin films that are close to the metal insulator transition (MIT) or metal semiconductor transition (MST) regime. Sensors of various designs have been fabricated according to the invention and may be used for deflection measurements, nano-indentation, visco-elastic measurements, topographical scanning, explosive detection, low abundance biomolecular detection, electromagnetic radiation detection and other similar detection and measurement systems. | 09-06-2012 |
| 20090237200 | Chip resistor and its manufacturing process - A chip resistor ( | 09-24-2009 |
| 20110279221 | RESISTOR AND METHOD OF FORMING A RESISTOR - A resistor and a method of forming a resistor are disclosed. The method of forming a resistor in accordance with an embodiment of the present invention can include: providing an electric conductor having a resistance area in which a plurality of through-holes are formed; measuring a resistance value of the resistance area; and compensating the resistance value of the resistance area by selectively removing a portion connecting the plurality of through-holes. Since it is possible to compensate the resistance value precisely by simply removing a portion connecting through-holes, the resistance value can be readily compensated. Moreover, since most of the through-holes needed for the adjustment of the resistance value can be formed by a common process, the production cost for forming a precise resistor can be saved. | 11-17-2011 |
| 20090015369 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A resistor R | 01-15-2009 |
| 20080272879 | Chip resistor and manufacturing method therefor - A chip resistor includes a resistive element ( | 11-06-2008 |
| 20080258862 | RESISTOR LAYOUT STRUCTURE AND MANUFACTURING METHOD THEREOF - A resistor layout structure and a manufacture method thereof are provided. The resistor layout structure includes a substrate, a plurality of metals, and a plurality of resistor lumps. The plurality of metals is disposed on the substrate. The plurality of first resistor lumps is disposed on the substrate. The metals are used as a supporting structure during the disposing process. Besides, the metals are interlaced and connected in series connected with the resistor lumps to form the resistor. Therefore, the present invention decreases the resistance variability of the resistor. | 10-23-2008 |
| 20090231085 | RESISTOR AND DESIGN STRUCTURE HAVING RESISTOR MATERIAL LENGTH WITH SUB-LITHOGRAPHIC WIDTH - A resistor and design structure including at least one resistor material length in a dielectric, each of the least one resistor material length having a sub-lithographic width are disclosed. | 09-17-2009 |
| 20090256670 | THIN FILM RESISTOR STRUCTURE AND FABRICATION METHOD THEREOF - A thin film resistor structure is disclosed. The resistor structure comprises a resistor film comprising a copper oxide layer and a plurality of metal islands thereon. The copper oxide layer has a top surface comprising a plurality of adjacent nodule-shaped recess regions, in which vacancies are formed between the nodule-shaped recess regions and are arranged in reticulate distribution. The plurality of metal islands is respectively distributed in the vacancies between the nodule-shaped recess regions. A method for fabricating the thin film resistor structure is also disclosed. | 10-15-2009 |
| 20100308955 | Ultra-Stable Refractory High-Power Thin Film Resistors for Space Applications - A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor. | 12-09-2010 |
| 20100245030 | Processes for Producing Thin-Film Sensors, Thin-Film Sensors and Thin-Film Sensor Modules - It is an object to provide processes for the production of thin-film sensors whereby crystals are strongly oriented without cost-adding steps such as heating and variations in electrical properties are small among the obtainable products. A process of producing a thin-film sensor is a process of producing a thin-film sensor that include an insulating substrate and an electrical resistor which is made of a metal and is provided on the insulating substrate, the process including a step of forming the electrical resistor by sputtering the metal while applying a negative direct-current voltage to the insulating substrate. | 09-30-2010 |
| 338308000 | Resistance element coated on base | 42 |
| 20090091418 | COATED WIRE AND FILM RESISTOR - A coated wire is solderable with soft solder while maintaining separate phases of the core and the coating. A 100 μm to 400 μm thick nickel wire may be coated galvanically with silver. For a film resistor with coated wires as connection wires, including a platinum measurement resistor on an electrically insulating substrate and connection wires connected to the measurement resistor, the connection wires have a coated nickel core. The coating may be made of silver or glass or ceramic or a mixture of these materials, or on its outside may be made of glass or ceramic or a mixture of these materials. For producing film resistors a thin metal or glass component is deposited on a connection wire connected to a track conductor arranged on an electrically insulating substrate, and a thick glass paste is deposited and fired on this metal or glass component. For mass production of film, several film resistors encased together in glass may be partitioned by fracturing. | 04-09-2009 |
| 20090267726 | METAL FOIL RESISTOR - The metal foil resistor having a metal foil resistive element | 10-29-2009 |
| 20090206982 | THIN-FILM RESISTOR WITH A LAYER STRUCTURE AND METHOD FOR MANUFACTURING A THIN-FILM RESISTOR WITH A LAYER STRUCTURE - A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C. | 08-20-2009 |
| 20120098635 | RESISTIVE ELEMENT AND MANUFACTURING METHOD THEREFOR - A higher precision resistive element suppresses variation of the resistance value due to variation of film thickness. A resistive element includes a first portion having a first film thickness and a first width, and a second portion having the first film thickness and a second width determined by the first width. The sum of the first and second widths is constant. The first portion has an upper surface at a position at which a height from the bottom surface of the resistive element first portion is a first height. The resistive element second portion has an upper surface of the resistive element second portion at a position at which a height from a surface including the bottom surface of the resistive element first portion is the first height. The resistive element first portion and the resistive element second portion are coupled to each other via a coupling portion. | 04-26-2012 |
| 20090206981 | MATCHED RF RESISTOR HAVING A PLANAR LAYER STRUCTURE - The invention relates to an RF resistor, and in particular an RF terminating resistor, having a planar layer structure which has, on a substrate ( | 08-20-2009 |
| 20090261942 | ELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE SAME - An electronic component and a method for producing the electronic component achieve efficient production of resistive elements with various resistances. The electronic component includes a pair of terminals opposite each other and a resistive element disposed between the pair of terminals. The resistive element includes a plurality of dots arranged so as to overlap each other in a reference arrangement pattern excluding a portion of the arrangement pattern. To produce the electronic component, an electronic component is prototyped in advance and includes a resistive element in which the dots are arranged in the entire reference arrangement pattern between the pair of terminals. The prototyped resistive element is then partially removed so as to attain a desired resistance. An electronic component is then produced in which the dots are arranged in the reference arrangement pattern with a portion of the arrangement pattern excluded on the basis of the shape of the partially removed resistive element. | 10-22-2009 |
| 20090002124 | Apertured chip resistor and method for fabricating same - An apertured fixed chip resistor and method for fabricating the same are disclosed according to the present invention, wherein a bonding layer is applied to accordingly bond together a substrate and a metallic sheet structure that has central aperture, and then a passivation layer is applied to partially cover the exposed surface of the metallic sheet structure and to divide the surface of the metallic sheet structure into a central covered region separating two uncovered regions, wherein the uncovered regions are provided to serve as electrode zones, thereby eliminating unnecessary current transmission impedance as in prior art as well as efficiently and stably reducing the temperature coefficient of resistance. The bonding design of the substrate and the metallic sheet structure of the present invention is capable of overcoming the drawback of the high cost of semiconductor processing as applied in prior art, and it provides a simple fabrication process that is capable of increasing process yield and decreasing total production costs. | 01-01-2009 |
| 20090261941 | SURFACE-MODIFIED RUTHENIUM OXIDE CONDUCTIVE MATERIAL, LEAD-FREE GLASS(ES), THICK FILM RESISTOR PASTE(S), AND DEVICES MADE THEREFROM - The invention relates to a surface-modified RuO | 10-22-2009 |
| 20100237982 | METAL STRIP RESISTOR FOR MITIGATING EFFECTS OF THERMAL EMF - A metal strip resistor includes a resistor body having a resistive element formed from a strip of an electrically resistive metal material and a first termination electrically connected to the resistive element to form a first junction and a second termination electrically connected to the resistive element to form a second junction, the first termination and the second termination formed from strips of electrically conductive metal material. The resistive element, the first termination, and the second termination being arranged mitigate thermally induced voltages between the first junction and the second junction. | 09-23-2010 |
| 20100301989 | Sputter deposition of cermet resistor films with low temperature coefficient of resistance - A solution for producing nanoscale thickness resistor films with sheet resistances above 1000Ω/□ (ohm per square) and low temperature coefficients of resistance (TCR) from −50 ppm/° C. to near zero is disclosed. In a preferred embodiment, a silicon-chromium based compound material (cermet) is sputter deposited onto a substrate at elevated temperature with applied rf substrate bias. The substrate is then exposed to a process including exposure to a first in-situ anneal under vacuum, followed by exposure to air, and followed then by exposure to a second anneal under vacuum. This approach results in films that have thermally stable resistance properties and desirable TCR characteristics. | 12-02-2010 |
| 20100134239 | Method of using a switchable resistive perovskite microelectronic device with multi-Layer thin film structure - A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications. | 06-03-2010 |
| 20090002123 | Ti(N) thin-film resistor deposited on ALN substrate and attenuator using same - The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. | 01-01-2009 |
| 20110018678 | POLY-RESISTOR, AND LINEAR AMPLIFIER - The present invention provides a poly-resistor with an improved linearity. Majority charge carrier wells are provided under the poly-strips and are biased in such way that the non-linearity of the resistor is reduced. Further, when such poly-resistors are used in amplifier circuits, the gain of the amplifier remains constant against the poly-depletion effect. | 01-27-2011 |
| 20100039213 | METHOD FOR PRODUCING AN ELECTRICAL RESISTOR ON A SUBSTRATE - A method for producing an electrical resistor, in particular a current sensing resistor, on a substrate, a resistor blank being placed on the substrate and then being heat-treated to form the resistor. To form the resistor blank, a palladium layer is applied to the substrate and a silver layer is applied to the palladium layer, or a silver layer is applied to the substrate and a palladium layer is applied to the silver layer, and the palladium of the palladium layer is then completely alloyed with the silver of the silver layer by heat treatment. | 02-18-2010 |
| 20120306611 | THIN FILM RESISTOR - The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer. | 12-06-2012 |
| 20110304423 | Method of using a buffered electric pulse induced resistance device - A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity. | 12-15-2011 |
| 20090134967 | RESISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a glazed metal film resistor device excellent in TCR characteristics with using an economical base body containing glass by reducing affection to TCR characteristics caused by glass contained in the base body. The resistor device comprises base body | 05-28-2009 |
| 20100245031 | Electrical Multilayer Component and Method for Producing an Electrical Multilayer Component - An electrical multilayer component has a stack of dielectric layers and electrode layers arranged one above another. Electrode layers of identical electrical polarity are jointly contacted to an external contact arranged at a side face of the stack. A resistor sintered to the stack and containing ceramic resistance material is arranged on an end face of the stack. | 09-30-2010 |
| 338309000 | Terminal coated on | 24 |
| 20130027175 | MULTILAYER CERAMIC SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A multilayer ceramic substrate includes a ceramic laminated body including a plurality of ceramic layers stacked on each other, a resistor, and a resistor connecting conductor with a portion overlapping the resistor and an overcoat layer that covers the resistor located on a principal surface of the ceramic laminated body. An overcoat layer is made relatively thick during firing, thereby making cracks less likely to be caused, and after the firing step, the thickness of the overcoat layer is reduced by physically scraping down the surface of the overcoat layer, thereby reducing the trimming time. In the overcoat layer, a region that covers a portion in which a resistor overlaps a resistor connecting conductor is thicker than a region that covers the other portion. | 01-31-2013 |
| 20090115569 | Chip Resistor - [Problem] To provide a chip resistor that is unlikely to suffer from mounting failure and capable of readily lowering its resistance. | 05-07-2009 |
| 20090115568 | Chip Resistor and Method for Producing the Same - The chip resistor ( | 05-07-2009 |
| 20120235782 | CHIP RESISTOR DEVICE AND A METHOD FOR MAKING THE SAME - A chip resistor device includes: a dielectric substrate that has top and bottom surfaces and two opposite edge faces interconnecting the top and bottom surfaces; two electrodes that are formed on two opposite sides of the dielectric substrate and that cover the edge faces and parts of the top and bottom surfaces; a resistor layer that is formed on one of the top and bottom surfaces of the dielectric substrate between the electrodes and that is brought into contact with the electrodes; and a heat conductive layer that is disposed on the resistor layer oppositely of the dielectric substrate and between the electrodes, that contacts the resistor layer and the two electrodes, and that has a higher resistance than that of the resistor layer. A method for making the chip resistor device is also disclosed. | 09-20-2012 |
| 20130127587 | CO-FIRED MULTI-LAYER STACK CHIP RESISTOR AND MANUFACTURING METHOD - A co-fired multi-layer stack chip resistor is provided. The co-fired multi-layer stack chip resistor includes a ceramic substrate and a multi-layer stack resistance structure monomer. The ceramic substrate is formed by stacking multiple layers of the ceramic membranes, wherein the ceramic membranes is formed of a bearing membrane and a porcelain slurry with the solvent, the binder and the dispersant. The multi-layer stack resistance structure monomer is stacked on the ceramic substrate, and includes multiple bearing membranes and multiple resistive layers, wherein each resistive layer is formed on the surface of the corresponding bearing membrane, the resistive layers are parallel to each other, and the contiguous resistive layers are stacked with the interval of the predetermined distance along the vertical direction. The multi-layer stack resistance structure monomer and the ceramic substrate are sintered and shaped with the predetermined sintering temperature and the predetermined sintering time in a kiln stove. | 05-23-2013 |
| 20080197967 | Circuit boards with embedded resistors - The present invention relates to an adjustable resistor embedded in a circuit board and a method of fabricating the same. The adjustable resistor comprises a resistor with a number of connection terminals, and a number of via holes extending to contact with the resistor. The resistive value of the resistor is variable depending on the size of the via holes, the number of the via holes, or the distance between the via holes. | 08-21-2008 |
| 20080211619 | SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME - A chip resistor includes an insulating substrate | 09-04-2008 |
| 20090040011 | Chip Resistor and Its Manufacturing Method - A chip resistor ( | 02-12-2009 |
| 20100102923 | CHIP RESISTOR AND METHOD OF MAKING THE SAME - A chip resistor includes an insulating substrate, a pair of electrodes formed on a main surface of the substrate and a resistor element electrically connected to the electrodes. The paired electrodes are spaced from each other in a first direction. The main surface of the substrate is formed with a raised portion in the form of a plateau which is smaller in size than the substrate in a second direction perpendicular to the first direction. The paired electrodes are formed on the raised portion. The resistor element is equal in size to the raised portion in the second direction. | 04-29-2010 |
| 20100201477 | CHIP RESISTOR AND METHOD FOR MAKING THE SAME - The present invention relates to a chip resistor and method for making the same. The chip resistor includes a substrate, a pair of bottom electrodes, a resistive film, a pair of main upper electrodes, a first protective coat, a pair of barrier layers, a second protective coat, a pair of side electrodes and at least one plated layer. The first protective coat is disposed over the resistive film, and covers part of the main upper electrodes. The barrier layers are disposed on the main upper electrodes, and cover part of the first protective coat. The second protective coat is disposed on the first protective coat, and covers part of the barrier layers. The plated layers cover the barrier layers, the bottom electrodes and the side electrodes. As a result, the chip resistor features high corrosion resistance. | 08-12-2010 |
| 20090231086 | TERMINAL STRUCTURE OF CHIPLIKE ELECTRIC COMPONENT - A terminal structure of a chip-like electric component capable of blocking entry of electromigration-causing factors through an insulating resin layer in the vicinity of the peak of a raised portion of an electrical element forming layer is obtained. A metal-glaze-based front electrode | 09-17-2009 |
| 20100171584 | CHIP RESISTOR AND METHOD OF MAKING THE SAME - A chip resistor of the present invention includes a substrate, a pair of electrode elements, a resistive layer, and a protective layer. The substrate is made of an insulating material and includes a first surface, a second surface opposite the first surface and a thickness defined between the first surface and the second surface. The electrode elements are formed on the first surface of the substrate and spaced apart from each other. The resistive layer is formed on the first surface of the substrate and electrically connected to the electrode elements. The protective layer is provided to cover the resistive layer. The first surface of the substrate is a mount side surface to face toward a mounting target, on which the chip resistor is mounted. Each of the electrode elements comprises an electrode layer and a conductive layer. The electrode layer is electrically connected directly to the resistive layer. The conductive layer is formed on the electrode layer. The boundary between the electrode layer and the conductive layer in each of the electrode elements is positioned closer to the substrate than the end surface of the protective layer in the thickness direction of the substrate. | 07-08-2010 |
| 20110234365 | CHIP RESISTOR HAVING LOW RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a chip resistor having low resistance and a method for manufacturing the same. The chip resistor includes a substrate, a resistive layer, a pair of conducting layers and at least one protective layer. The substrate has a first surface. The resistive layer is disposed on the first surface of the substrate. The conducting layers are disposed adjacent to the first surface of the substrate. The at least one protective layer is disposed on the resistive layer or the conducting layers. As a result, the resistive layer has a precise pattern, and the duration of sputtering is reduced, thereby improving yield rate and efficiency while reducing manufacturing cost. | 09-29-2011 |
| 20100225439 | ARRAY RESISTOR AND METHOD OF FABRICATING THE SAME - An array resistor may include a body, a first resistor, and a second resistor. The body may have a front surface, a rear surface opposite to the front surface, and side surfaces connecting the front surface and the rear surface. The first resistor may be disposed on the front surface, the first side surface, and the second side surface opposite to the first side surface. The second resistor may be disposed on the rear surface, the third side surface, and the fourth side surface opposite to the third side surface. | 09-09-2010 |
| 20110057767 | ARRAY TYPE CHIP RESISTOR - The present invention provides an array type chip resistor including: a substrate formed in a rectangular parallelepiped shape; lower electrodes disposed on both sides of a bottom surface of the substrate at equal spaces; side electrodes extended from some of lower electrodes, formed on outermost edges of both sides of the substrate, in all lower electrodes, to a side surface of the substrate; a resistive element interposed between lower electrodes of the bottom surface of the substrate; a protection layer covered on the resistive element, the protection layer having both sides which cover a part of the lower electrodes and the resistive element; leveling electrodes being in contact with the lower electrodes exposed to outside of the protection layer; and a plating layer formed on the leveling electrodes. The array type chip resistor can prevent the resistive element from being damaged due to external impact when mounted since the resistive element is printed inside of the lower electrodes of the bottom surface of the substrate. | 03-10-2011 |
| 20080224818 | Chip Resistor and Manufacturing Method Thereof - A chip resistor (A | 09-18-2008 |
| 20090322468 | Chip Resistor and Manufacturing Method Thereof - [Problem] To provide a chip resistor and a method for manufacturing thereof, the chip resistor keeping easily soldering strength even if mounted in a horizontal position, and never projects from a holding recess of a positioning jig in a mounting process, and further does not hinder miniaturization thereof from being promoted, while keeping a good appearance thereof. | 12-31-2009 |
| 20080218306 | Chip resistor and method of making the same - A chip resistor includes an insulating substrate, a pair of electrodes formed on a main surface of the substrate and a resistor element electrically connected to the electrodes. The paired electrodes are spaced from each other in a first direction. The main surface of the substrate is formed with a raised portion in the form of a plateau which is smaller in size than the substrate in a second direction perpendicular to the first direction. The paired electrodes are formed on the raised portion. The resistor element is equal in size to the raised portion in the second direction. | 09-11-2008 |
| 20090108986 | Chip Resistor - [Problem] To provide a chip resistor that readily lowers its resistance and exhibits excellent manufacturing yield. | 04-30-2009 |
| 20090040010 | Embedded resistor and capacitor circuit and method of fabricating same - An embedded resistor and capacitor circuit and fabrication method is provided. The circuit includes a substrate, a conductive foil laminated to the substrate, and a thick film dielectric material disposed on the conductive foil. One or more thick film electrodes are formed on the dielectric material and a thick film resistor is formed at least partially contacting the thick film electrodes. A capacitor is formed by an electrode and the conductive foil. The electrodes serve as terminations for the resistor and capacitor. | 02-12-2009 |
| 20090160602 | Chip Resistor - The chip resistor ( | 06-25-2009 |
| 20080290984 | EMBEDDED RESISTOR DEVICES - An embedded resistor device includes a resistor, a ground plane located near a first side of the resistor and electrically coupled to a first end of the resistor, at the ground plane a hole is provided, a first dielectric layer exists between the resistor and the ground plane, a conductive wire, which is electrically coupled to a second end of the resistor different from the first end of the resistor and partially surrounds the resistor, is used as an auxiliary for supporting a resistor-coating process of the resistor and to provide a terminal of the embedded resistor device at the conductive wire, a conductive region located near a second side of the ground plane different from the first side of the resistor, a second dielectric layer exists between the ground plane and the conductive region, and a conductive path to electrically couple the conductive wire to the conductive region through the hole. | 11-27-2008 |
| 20120126934 | SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME - A chip resistor includes an insulating substrate | 05-24-2012 |
| 20100328022 | METHOD FOR FABRICATING METAL GATE AND POLYSILICON RESISTOR AND RELATED POLYSILICON RESISTOR STRUCTURE - An integrated method includes fabricating a metal gate and a polysilicon resistor structure. A photoresistor layer is defined by an SAB photo mask and covers a part of a polysilicon structure of the polysilicon resistor. When the gate conductor of a poly gate transistor is etched, the part of the polysilicon structure is protected by the patterned photoresistor layer. After the polysilicon resistor and the metal gate are formed. The polysilicon resistor still has sufficient resistance and includes two metal structures for electrical connection. | 12-30-2010 |
| 338311000 | Resistance element mounted in a groove in base | 2 |
| 20080278279 | Semiconductor structure with high breakdown voltage and resistance and method for manufacturing the same - A semiconductor structure with high breakdown voltage and high resistance and method for manufacturing the same. The semiconductor structure at least comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; two first wells having the first conductive type and formed within the deep well; a second well having the first conductive type and formed between two first wells within the deep well, and a implant dosage of the second well lighter than a implant dosage of the first well; and two first doping regions having the first conductive type and respectively formed within the first wells. | 11-13-2008 |
| 20090231087 | RESISTOR AND DESIGN STRUCTURE HAVING SUBSTANTIALLY PARALLEL RESISTOR MATERIAL LENGTHS - A resistor and design structure including a pair of substantially parallel resistor material lengths separated by a first dielectric are disclosed. The resistor material lengths have a sub-lithographic dimension and may be spacer shaped. | 09-17-2009 |
| 338314000 | Resistance element and base formed in layers | 10 |
| 20100109834 | GEOMETRIC AND ELECTRIC FIELD CONSIDERATIONS FOR INCLUDING TRANSIENT PROTECTIVE MATERIAL IN SUBSTRATE DEVICES - A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap. | 05-06-2010 |
| 20100066483 | RF TERMINATING RESISTOR OF FLANGED CONSTRUCTION - An RF terminating resistor with a flange body, a planar layer structure, an upper face of a substrate, a resistance layer, an input conductor track, and an earth connection conductor track. The input conductor track electrically connected to opposite ends of the resistance layer. The substrate having a contact face, facing away from the layer structure. The flange body being bent around in a direction parallel to a first edge facing the earth conductor track, and a predetermined section bent around in a direction at right angles to this edge. The bent-around section extending in a space between a first plane, defined by the contact face, and a second plane, defined by the upper face, with the substrate abutting on the bent-around section connecting the contact face to the upper face and facing the earth connection conductor track on the upper face. | 03-18-2010 |
| 20090302993 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process. | 12-10-2009 |
| 20090267727 | Thin film resistor element and manufacturing method of the same - In order to provide a thin-film resistor and a manufacturing method thereof capable of restraining reduction of a Q-value of varactor by reducing a parasitic capacitance between the resistor and the substrate, the thin-film resistor includes a semiconductor substrate | 10-29-2009 |
| 20130127588 | HIGH FREQUENCY RESISTOR - An ultra wideband frequency compensated resistor and related methodologies for frequency compensation are disclosed. In exemplary configuration, a resistive layer is provided over a substrate, and a frequency compensating structure is provided over at least a portion of the resistive layer and separated therefrom by an insulative layer. In certain embodiments, the insulating layer may be an adhesive that may also be effective to secure a protective cover over the resistive material and supporting substrate. In selected embodiments, the frequency compensating structure corresponds to a plurality of conductive layers, one or more of which may be directly electrically connected to terminations for the resistive material while one or more of the conductive layers are not so connected. | 05-23-2013 |
| 20090284342 | CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME - A chip resistor includes a resistor element, a reinforcing member, and a pair of electrodes. The resistor element includes a first surface and a second surface opposite to the first surface. The reinforcing member is bonded to the first surface of the resistor element. The pair of electrodes are formed on the second surface of the resistor element. The resistor element is formed with a slit located between the pair of electrodes. | 11-19-2009 |
| 20120200383 | CURRENT SENSING RESISTOR - A resistor device includes a resistor plate and an electrode structure. The electrode structure includes an electrode layer and an auxiliary layer. The electrode layer is disposed at a first face of the resistor plate and includes a first portion and a second portion overlying a first side and a second side of the resistor plate, respectively, and a current path is conducted between the first portion and the second portion through the resistor plate. The auxiliary layer is disposed at a second face of the resistor plate and includes at least a first block and a second block overlying the first side of the resistor plate, and at least a third block overlying the second side of the resistor plate, wherein the first, second and third blocks of the auxiliary layer are separated from one another so that any current flow among the blocks is blocked. | 08-09-2012 |
| 20110063072 | RESISTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A resistor device includes a resistor plate having a first aperture, a second aperture, a third aperture and a fourth aperture respectively arranged on a first side, a second side, a third side and a fourth side thereof. A first electrode plate is coupled to the first side of the resistor plate and includes a first measurement zone and a second measurement zone disposed at opposite sides of the first aperture; and a second electrode plate is coupled to the third side of the resistor plate and including a third measurement zone and a fourth measurement zone disposed at opposite sides of the third aperture, wherein the first measurement zone and the third measurement zone are disposed at opposite sides of the second aperture, and the second measurement zone and the fourth measurement zone are disposed at opposite sides of the fourth aperture. | 03-17-2011 |
| 20120062355 | NANOFLAT RESISTOR - A nanoflat resistor includes a first aluminum electrode ( | 03-15-2012 |
| 20110273266 | Resistor having parallel structure and method of fabricating the same - There are provided a resistor and a method of fabricating the same. More particularly, there are provided a resistor having a parallel structure capable of easily implementing a resistance value when forming a resistor directly on a wafer during a wafer process, and a method of fabricating the same. | 11-10-2011 |
