Entries |
Document | Title | Date |
20080246580 | VARIABLY POROUS STRUCTURES - A method of making a monolithic porous structure, comprises electrodepositing a material on a template; removing the template from the material to form a monolithic porous structure comprising the material; and electropolishing the monolithic porous structure. | 10-09-2008 |
20080252410 | RESISTOR STRUCTURE AND FABRICATING METHOD THEREOF - A resistor structure includes a substrate, a well of a predetermined conductive type positioned in the substrate, a gate structure positioned on the substrate, a first doping region of the predetermined conductive type positioned at a first side of the gate structure, a second doping region of the predetermined conductive type positioned at a second side of the gate structure. The predetermined conductive type can be P type or N type. A fabricating process of the resistor can be integrated into a conventional MOS transistor fabricating process. Moreover, the resistor has better heat dissipation than conventional resistors. | 10-16-2008 |
20090021340 | MULTILAYER CERAMIC ELECTRONIC COMPONENT - A multilayer ceramic electronic component includes a multilayer body, a first internal electrode provided in the multilayer body, and a second internal electrode provided in the multilayer body and facing the first internal electrode. The multilayer body includes a first ceramic layer, a second ceramic layer provided on a first surface of the first ceramic layer, and a third ceramic layer provided on a second surface of the first ceramic layer opposite to the first surface. The first and second internal electrodes are connected to the first ceramic layer. The first ceramic layer contains mainly ZnO and 0 to 15 mol % of SiO | 01-22-2009 |
20090096568 | VARIABLE RESISTANCE ELEMENT, AND ITS MANUFACTURING METHOD - Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art. | 04-16-2009 |
20090102597 | VARIABLE RESISTANCE ELEMENT - In a variable resistance element having a variable resistor between first and second electrodes and changing its electric resistance when a voltage pulse is applied between both electrodes, data holding characteristics can be improved by increasing a programming voltage and programming in a high current density. Therefore, a booster circuit for supplying a high voltage is needed when the variable resistance element is applied to a nonvolatile memory. When the smaller of the areas of the contact regions between the first electrode and variable resistor and between the second electrode and variable resistor is set to the electrode area of the variable resistance element, it is set within a specific range not larger than the predetermined electrode area. Thereby the programming current density can be increased without raising the programming voltage, and the variable resistance element having preferable data holding characteristics even at a high temperature can be provided. | 04-23-2009 |
20090102598 | SEMICONDUCTOR MEMORY DEVICE WITH VARIABLE RESISTANCE ELEMENT - A semiconductor memory device comprising a variable resistance element having a variable resistor between a first electrode and a second electrode, in which electric resistance is changed by applying a voltage pulse between the electrodes comprises at least one reaction preventing film made of a material having an action of blocking the permeation of a reduction species promoting a reduction reaction of the variable resistor and an oxidation species promoting an oxidation reaction of the variable resistor. This prevents the resistance value of the variable resistance element from fluctuating due to a reduction reaction or an oxidation reaction of the variable resistor caused by hydrogen or oxygen existing in the manufacturing steps, so that a semiconductor memory device having a small variation of the resistance value and having a good controllability can be realized with good repeatability. | 04-23-2009 |
20090121822 | Disc Varistor and Method of Manufacturing the Same - Disclosed herein are a disc varistor having a capability to absorb a double amount of surge and a method of manufacturing the varistor. The varistor includes a disc-shaped first ceramic body having first and second electrodes on opposite surfaces thereof, and a disc-shaped second ceramic body having third and fourth electrodes on opposite surfaces thereof. A first lead wire is in interposed between the second and third electrodes and electrically connected to the second and third electrodes. The varistor also includes a second lead wire. The second lead wire has a body portion electrically connected to the first electrode of the first ceramic body, a first extension extending from the body portion to the second ceramic body, and a second extension extending from the first extension to the fourth electrode. | 05-14-2009 |
20090121823 | VARIABLE-RESISTANCE ELEMENT - The invention provides a variable-resistance element having a multilayer structure. The variable-resistance element includes, for example, a first electrode, a second electrode, and an oxygen ion migration layer disposed between the first electrode and the second electrode. In the oxygen ion migration layer, oxygen vacancy can be produced owing to oxygen ion migration, thereby forming a low resistance path. The variable-resistance element also includes an oxygen ion generation promoting layer disposed between the oxygen ion migration layer and the first electrode and held in contact with the oxygen ion migration layer. | 05-14-2009 |
20090128281 | COMPOSITE CHIP VARISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A composite chip varistor device includes a body; at least one inner varistor, disposed in the body; and a plurality of end electrodes, disposed at two sides of the inner varistor. The body is a highly insulative and imporous mono-material. The body of the present invention provides protection for the inner varistor to avoid being damaged by external factors and the manufacturing cost of the varistor device is effectively reduced. | 05-21-2009 |
20090174519 | NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile memory element comprising: a first electrode | 07-09-2009 |
20090231083 | Variable resistor element and its manufacturing method - A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor. | 09-17-2009 |
20090309690 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition. | 12-17-2009 |
20100052841 | MULTILAYER CHIP VARISTOR - A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode | 03-04-2010 |
20100066479 | MULTILAYER CHIP VARISTOR AND ELECTRONIC COMPONENT - A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face | 03-18-2010 |
20100085142 | VARIABLE RESISTOR ELEMENT, MANUFACTURING METHOD THEREOF, AND MEMORY DEVICE PROVIDED WITH IT - A variable resistor element comprising a first electrode, a second electrode, and a variable resistor positioned between the first and second electrodes, and changing in electric resistance when a voltage pulse is applied between the both electrodes, has posed problems that it has a restriction of having to use noble metal electrodes as an electrode material and is not compatible with a conventional CMOS process. A variable resistor element using an oxynitride of transition metal element as a variable resistor exhibits a stable switching operation, is satisfactory in data retaining characteristics, and requires a small programming current. Since it does not necessarily require noble metal as an electrode material, it is high in compatibility with the existing CMOS process and easy to produce. It can be formed by a simple step of forming a variable resistor material into a film by oxidizing a lower electrode surface consisting of conductive nitride. | 04-08-2010 |
20100085143 | VARISTOR AND PRODUCTION METHOD - A varistor has a disc of ceramic material having opposed faces with face edges. There is an electrode on each face with a gap between each electrode and the edge of the face. Glass passivation is on at least one face in the gap, the passivation not extending from one electrode to the other electrode around the surface of the disc. Because the passivation is only on the planar opposed disc faces, it may be applied in a simple operation such as screen printing. Indeed, the screen printing may be performed while the discs are in the same nest plates as are used for printing of electrode paste. Even though the passivation does not extend from one electrode to the other, it nevertheless breaks a potentially conductive path between the electrodes caused by interaction between the ceramic and encapsulant materials. | 04-08-2010 |
20100123542 | NANO-DIMENSIONAL NON-VOLATILE MEMORY CELLS - A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode. | 05-20-2010 |
20100141376 | ELECTRONIC DEVICE FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING HIGH ASPECT RATIO PARTICLES - One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device. | 06-10-2010 |
20100194520 | MANUFACTURING PROCESS FOR SURGE ARRESTER MODULE USING PRE-IMPREGNATED COMPOSITE - An electrical module assembly used in a surge arrester is manufactured by wrapping an electrical module assembly including at least one metal oxide varistor (MOV) disk to which a reinforcing structure including a pre-impregnated epoxy/glass-fiber composite has been applied with shrink film and compacting the wrapped electrical module assembly by heating the shrink film such that the shrink film shrinks and applies a radially compressive force to the electrical module assembly. The wrapped electrical module assembly then is cured at a temperature at which the shrink film no longer applies a compressive force. | 08-05-2010 |
20100225438 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT - A method for manufacturing a variable resistance element includes the steps of: depositing a variable resistance material ( | 09-09-2010 |
20100259357 | THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME - A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit. | 10-14-2010 |
20110037558 | CONTINUOUSLY VARIABLE RESISTOR - A continuously variable resistor is disclosed. The continuously variable resistor may comprise a first chalcogenide layer and a second chalcogenide layer. The second chalcogenide layers may be connected to the first chalcogenide layer and may have a metal interspersed within it. The second chalcogenide layer may be metal-rich, in a state of solid solution with the interspersed metal. The continuously variable resistor may be configured to exhibit NDR behavior. The continuously variable resistor may be configured to have three or more substantially non-volatile resistance states. | 02-17-2011 |
20110057763 | Voltage Dependent Resistor with Overheated Protection Structure - A new voltage dependent resistor with overheated protection structure. The said voltage dependent resistor includes a ceramic body. Metal electrodes are set at the two opposite sides of the ceramic body, and each of the metal electrodes is connected to one electrode lead. The said voltage dependent resistor further includes a conductive connector structure which can connect the two metal electrodes when a heat-fusing insulating layer that is set between the conductive IN connector structure and the metal electrodes is melt down. | 03-10-2011 |
20110074539 | VARIABLE RESISTANCE ELEMENT AND MANUFACTURING METHOD OF THE SAME - A variable resistance element capable of increasing stability of a resistance changing operation and reducing a current necessary for changing, to a low resistance state for the first time, the variable resistance element in an initial state immediately after manufacture. The variable resistance element includes: a first electrode ( | 03-31-2011 |
20110140828 | NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile memory element comprising: a first electrode | 06-16-2011 |
20110163842 | Method for Increasing the ESD Pulse Stability of an Electrical Component - A method for increasing the ESD pulse stability of an electrical component is disclosed. An electrical component is pre-aged by means of an aging pulse generated by a pulse generator. The degradation of an electrical characteristic curve of the component by ESD pulses that occur during operation of the electrical component is improved by the pre-aging. | 07-07-2011 |
20110175700 | CONDUCTIVE POLYMER ELECTRONIC DEVICES WITH SURFACE MOUNTABLE CONFIGURATION AND METHODS FOR MANUFACTURING SAME - Surface-mountable conductive polymer electronic devices include at least one conductive polymer active layer laminated between upper and lower electrodes. Upper and lower insulation layers, respectively, sandwich the upper and lower electrodes. First and second planar conductive terminals are formed on the lower insulation layer. First and second cross-conductors are provided by plated through-hole vias, whereby the cross-conductors connect each of the electrodes to one of the terminals. Certain embodiments include two or more active layers, arranged in a vertically-stacked configuration and electrically connected by the cross-conductors and electrodes in parallel. Several embodiments include at least one cross-conductor having a chamfered or beveled entry hole through the upper insulation layer to provide enhanced adhesion between the cross-conductor and the insulation layer. Several methods for manufacturing the present surface-mountable conductive polymer electronic devices are also provided. | 07-21-2011 |
20110234363 | ELECTRONIC DEVICE FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING HIGH ASPECT RATIO PARTICLES - One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device. | 09-29-2011 |
20110248816 | VARISTOR COMPRISING AN ELECTRODE HAVING A PROTRUDING PORTION FORMING A POLE AND PROTECTION DEVICE COMPRISING SUCH A VARISTOR - An exemplary varistor is disclosed which includes at least two poles; a non-linear block; a conductive plate arranged on a main face of the block and having a protruding portion forming one of the poles; and an electrically insulating coating applied to the main face of the block. The part forming the connection pole emerges from the electrically insulating coating and has a braze surface extending above the electrically insulating coating; and the protruding part forming the connection pole is connected to the rest of the plate over at least half of the perimeter thereof. | 10-13-2011 |
20110298578 | Electrical Multilayer Component - An electrical multilayer component includes a base body with at least two external electrodes. The electrical multilayer component includes at least a first and a second internal electrode, which are each electrically conductively connected to a respective external electrode. The electrical multilayer component includes at least one ceramic varistor layer encompassing at least the first internal electrode. The electrical multilayer component includes at least one dielectric layer arranged between the at least one varistor layer and the second internal electrode. The dielectric layer has at least one opening, which can be filled with a gaseous medium. | 12-08-2011 |
20120044039 | Electrical Multilayer Component - The electrical multilayer component includes a base body with external electrodes and internal electrodes. A ceramic varistor layer is provided with the first internal electrode, and a dielectric layer adjoins the varistor layer. The dielectric layer has at least one opening filled with a semiconducting material or a metal. | 02-23-2012 |
20120126931 | ELECTROLYTE COMPOSITION - This invention relates to an electrolyte composition comprising an ionic liquid, a gellant selected from a cellulose derivative, gelatine and combinations thereof, and a radiation-curabie base. It also provides an electrochemical device comprising the electrolyte composition | 05-24-2012 |
20120126932 | RESISTIVE SWITCHES - Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold. | 05-24-2012 |
20130135078 | CERAMIC, GRADED RESISTIVITY MONOLITH USING THE CERAMIC, AND METHOD OF MAKING - According to one embodiment, a monolithic cassette with graded electrical resistivity is presented. The monolithic cassette has a continuous grain structure between a first end and a second end; wherein electrical resistivity of the monolithic cassette is graded such that the resistance varies continuously from the first end to the second end. Methods and compositions for forming the monolithic cassette are also presented. | 05-30-2013 |
20130307662 | NEGATIVE DIFFERENTIAL RESISTANCE DEVICE - Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes. | 11-21-2013 |
20140077923 | CONDUCTIVE POLYMER ELECTRONIC DEVICES WITH SURFACE MOUNTABLE CONFIGURATION AND METHODS FOR MANUFACTURING SAME - Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress. In other embodiments, these advantages are achieved by having at least one cross-conductor in physical contact with a metallized anchor pad on the first insulation layer. | 03-20-2014 |
20140125447 | Resistance calibrating circuit - A resistance calibrating circuit includes an external power source; a reference unit, a current calibrating circuit and a voltage calibrating unit which are respectively connected to the external power source; an external reference voltage which is respectively connected to the reference unit and the voltage calibrating unit; an to-be-calibrated voltage-controlled resistor which is respectively connected to the current calibrating unit and the voltage calibrating unit, wherein the current calibrating unit is further connected to the reference unit. The resistance calibrating circuit is capable of automatically adjusting a resistance of the to-be-calibrated voltage-controlled resistor highly precisely and highly efficiently. | 05-08-2014 |
20140253283 | OVERVOLTAGE PROTECTION ELEMENT - An overvoltage protection element is disclosed that includes a housing, connections for electrically connecting the overvoltage protection element to a current path or a signal path to be protected The overvoltage protection element further includes two varistors arranged inside the housing and electrically connected in parallel, and a center electrode arranged at least partially between the varistors. The housing has two housing halves made of metal and electrically connected to each other, wherein the center electrode is isolated from the housing halves and is electrically connected at the opposite sides of the electrode to a first connection area of a varistor and wherein the two varistors and the center electrode are sandwiched between the two housing halves. The overvoltage protection element includes an arrester between one terminal of the overvoltage protection element and the parallel connection of the two varistors. | 09-11-2014 |
20140361864 | Resistance Change Device, and Method for Producing Same - To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device | 12-11-2014 |
20140375416 | SIGNAL ADJUSTING DEVICE COMPRISING TERMINATION RESISTOR UNIT IN WHICH A SIGNAL LINE IS SUBJECTED TO TERMINATION - A detection signal receiving unit receives, via signal lines, a detection signal output from a position detector which is used in a motor control device. The resistance value of a termination resistor unit is changed to a resistance value determined depending on the type of the position detector in accordance with the received detection signal and the reference value determined depending on the type of the position detector. | 12-25-2014 |
20140375417 | ELECTRICALLY-DRIVEN PHASE TRANSITIONS IN FUNCTIONAL OXIDE HETEROSTRUCTURES - A tunable resistance system includes a layer of a first functional material deposited on a component of the system. The first functional material undergoes a phase transition at a first critical voltage. An insulating layer is deposited upon the layer of first functional material. A layer of a second functional material deposited on the insulating layer. The second functional material undergoes a phase transition at a second critical voltage. The insulating layer is configured to induce a stress on the layer so as to change the first critical voltage. In this way, the resistance of the system is tunable, allowing the system to undergo multi-stage electrical switching of resistive states. | 12-25-2014 |
20150109093 | VARIABLE RESISTANCE ELEMENT - With miniaturization of a variable resistance element, it is becoming difficult to suppress the adverse effect CMP or etching might have on the resistance variable element. There is proposed a variable resistance element comprising an insulation film and a lower electrode equipped with a first portion surrounded by the insulation film and a columnar-shaped second portion protruded upwards from the first portion beyond an upper surface of the insulation film. The variable resistance element also comprises a variable resistance film that covers a preset region of the insulation film, the present region including the lower electrode, and that is electrically connected to at least an upper surface of the second portion of the lower electrode. The variable resistance element further comprises an upper electrode that covers the variable resistance film and that is electrically connected to the variable resistance film. | 04-23-2015 |
20150145638 | ZnO MULTILAYER CHIP VARISTOR WITH BASE METAL INNER ELECTRODES AND PREPARATION METHOD THEREOF - Provided are a multilayer chip ZnO varistor with base metal inner electrodes and a preparation method thereof. The varistor is formed by ceramic sheets and inner electrodes which were alternately laminated. Wherein the main material of inner electrodes is the base metal nickel(Ni), both ends of the varistor are coated with silver electrodes. The present invention has the following beneficial effects: (1) the material formula of ZnO varistor is suitable for the preparation process of reduction and reoxidation; (2) the base metal Ni is used as inner electrodes which can sharply reduce the preparation cost of a multilayer chip ZnO varistor; (3) using a conventional solid-phase sintering method, it can complete the burning of silver and the oxidation of the ceramic simultaneously which is suitable for mass production; (4) the nonlinear coefficient of the ZnO multilayer chip varistor produced by the method of this invention can reach 30 or more, the varistor breakdown voltage is less than 20V and the size can be standard chip package size 0805,0603,0402 and 0201. | 05-28-2015 |
20160027561 | CERAMIC ELECTRONIC COMPONENT - A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes on a surface of the ceramic element. The coating film includes cationic elements from a constituent element of the ceramic element, which are ionized and deposited from the ceramic element, and a resin. The surface of the coating film is recessed relative to a surface of wrapping parts of the external electrodes on the surface of the ceramic element. | 01-28-2016 |
20160035466 | ELECTRODE COMPONENT WITH PRETREATED LAYERS - An electrode component with pretreated layers includes a ceramic substrate, two pretreated layers formed on two opposite surfaces of the ceramic substrate, two electrode layers respectively formed on the two pretreated layers, two pins respectively connected to the electrode layers, and an insulating layer enclosing the ceramic substrate, the pretreated layers, the electrode layers, and portions of the two pins. The pretreated layer formed between the ceramic substrate and the electrode layer replaces the fabrication means for conventional silver electrode layer to provide good binding strength between the ceramic substrate and the electrode layer. Besides same electrical characteristics for original products, the electrode component can get rid of the use of precious silver in screen printed silver electrode and avoid pollution caused by evaporation and thermal dissolution of organic solvent while lowering the ohmic contact resistance between the electrode layer and the ceramic substrate. | 02-04-2016 |
20190148041 | VERTICALLY-CONSTRUCTED, TEMPERATURE-SENSING RESISTORS AND METHODS OF MAKING THE SAME | 05-16-2019 |