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Using surface acoustic waves

Subclass of:

333 - Wave transmission lines and networks

333024000 - COUPLING NETWORKS

333186000 - Electromechanical filter

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
333195000 With wave-modifying means (e.g., reflectors, resonators, diffractors, multistrip couplers, etc.) 70
333194000 Including spurious signal prevention or reduction means 3
20120235769ELASTIC WAVE FILTER - There is provided a tapered elastic wave filter higher in impedance than a conventional filter where one input-side IDT electrode and one output-side IDT electrode are disposed. Filter parts which are the same in the structure of an input-side IDT electrode and in the structure of an output-side IDT electrode are disposed, and when the first filter part is disposed on a lower side and the second filter part is disposed on an upper side of the first filter part so that the input-side IDT electrodes are connected and the output-side IDT electrodes are connected, in cascade (in series) between a signal port and a ground port, an upper busbar in each of the IDT electrodes of the first filter part and a lower busbar in each of the IDT electrodes of the second filter part are electrically connected to each other.09-20-2012
20110133858ELASTIC WAVE ELEMENT AND ELECTRONIC DEVICE USING THE SAME - An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on a piezoelectric device, a first dielectric layer disposed on the piezoelectric substrate such that it covers the IDT electrode, and a second dielectric layer disposed over the first dielectric layer. The second dielectric layer propagates transverse waves faster than that on the first dielectric layer. When a film thickness of the second dielectric layer is greater than a wave length of a major wave excited by the IDT electrode, a cut angle of the piezoelectric substrate in indication of Euler angles (φ, θ, Φ) is set to φ≠0°, θ≠0°, and Φ≠0°. This suppresses deterioration of device characteristics.06-09-2011
20080197943Cancellation of Anti-Resonance in Resonators - Briefly, in accordance with one embodiment of the invention, a resonator such as an electromechanical resonator may be coupled with a cancellation network to reduce and/or cancel an anti-resonance effect in the resonator, which may be due to, for example, a static capacitance inherent in the resonator. Cancellation of an anti resonance effect from the resonator response may allow a resonance effect of the resonator to be a predominant effect to allow the resonator to be utilized as a bandpass filter having a relatively higher Q, for example in a bandpass sigma-delta modulator that may be utilized in a digital RF receiver.08-21-2008
333196000 With response weighting means 3
20080315973SURFACE ACOUSTIC WAVE FILTER, BOUNDARY ACOUSTIC WAVE FILTER, AND ANTENNA DUPLEXER USING SAME - A surface acoustic wave filter includes a piezoelectric substrate including lithium niobate, a series resonator including a first interdigital transducer electrode provided on the piezoelectric substrate, and a parallel resonator including a second interdigital transducer electrode provided on the piezoelectric substrate and being electrically connected to the series resonator. An apodized weighting factor of the first interdigital transducer electrode is smaller than an apodized weighting factor of the second interdigital transducer electrode. This surface acoustic wave filter has a small loss.12-25-2008
20100301969ACOUSTIC WAVE DEVICE - A longitudinally-coupled resonator-type acoustic wave device includes first to third IDT electrodes disposed on a piezoelectric material and first and second reflectors disposed in acoustic wave propagation directions. Each of any two IDT electrodes adjacent to each other in the acoustic wave propagation directions, of the first to third IDT electrodes, has a narrower-pitch electrode finger portion at an edge thereof adjacent to the other IDT electrode. Most portions of the first to third IDT electrodes are apodized, and the narrower-pitch electrode finger portions and the electrode finger portions adjacent thereto are normally shaped.12-02-2010
20110084780Transversal Filter - The filter includes at least one acoustic track formed on a piezoelectric substrate. At least one SAW input transducer and at least one SAW output transducer are arranged in each track. Each track has a RSPUDT structure and thus a distributed excitation. The excitation function includes sources arranged in a main lobe and a tail function including at least one tail lobe. A fine and precise approximation to the desired continuous excitation function is obtained by decreasing the excitation strength in the tail function by a factor of at least 2.04-14-2011
Entries
DocumentTitleDate
20130027156CIRCUIT MODULE AND COMPOSITE CIRCUIT MODULE - A SAW filter includes a piezoelectric substrate, a longitudinal coupling portion disposed on a main surface of the piezoelectric substrate, a support layer and cover layers covering the main surface of the piezoelectric substrate with an air gap on the longitudinal coupling portion, and bumps that are disposed on one of the cover layers and are electrically connected to the longitudinal coupling portion. A mount board is mounted on a motherboard. The SAW filter is mounted on the mount board via the bumps.01-31-2013
20080258843Surface acoustic wave passband control - An apparatus in one example comprises a piezoelectric layer, an input transducer, an output transducer, and at least one electrode set. The input transducer is configured to convert an input signal from an input source to a surface acoustic wave and send the surface acoustic wave from an input portion of the piezoelectric layer to an output portion of the piezoelectric layer. The input transducer comprises a set of input passbands. The output transducer is configured to receive the surface acoustic wave from the output portion of the piezoelectric layer. The output transducer comprises a set of output passbands. The at least one electrode set is configured to apply at least one voltage bias to at least one portion of the piezoelectric layer to create an electric field that controls an acoustic velocity of the surface acoustic wave through the at least one portion of the piezoelectric layer. The at least one electrode set is configured to control one or more of the set of input passbands and the set of output passbands by adjustment of the at least one voltage bias.10-23-2008
20100271152INTEGRATED COUPLING STRUCTURES - An integrated package provides contactless communication through a coupling mechanism embedded in the package. Package types include Surface Mount Technology (SMT), Low Temperature Co-fired Ceramic (LTCC) technology, and dual-in-line integrated circuit pressed ceramic packages generally. The package can include an acoustic wave device (AWD) sensor such as a surface acoustic wave (SAW) device or a bulk acoustic wave (BAW) device. Coupling includes inductive and capacitive effects through plates, loops, spirals, and coils. Coil inductance and SAW capacitance can be parallel resonant at the desired SAW resonance with the coil impedance higher than the SAW impedance, minimizing load-pull effects.10-28-2010
20130057361SURFACE ACOUSTIC WAVE DEVICE AND PRODUCTION METHOD THEREFOR - A surface acoustic wave device includes a surface acoustic wave element including a plurality of electrode pads, and a mount substrate. The surface acoustic wave element is flip-chip mounted on a die-attach surface of the mount substrate by bumps made of Au. The mount substrate includes at least one resin layer including via-holes, a plurality of mount electrodes provided on the die-attach surface of the mount substrate, and via-hole conductors. The mount electrodes are bonded to the electrode pads via the bumps. The via-hole conductors are provided in the via-holes. At least one of each of the electrode pads and each of the mount electrodes includes a front layer made of Au. At least one of the via-hole conductors is located below the corresponding bump.03-07-2013
20130069742DUAL-BAND SURFACE ACOUSTIC WAVE FILTER AND COMPOSITE HIGH-FREQUENCY COMPONENT - A dual-band surface acoustic wave filter is mounted on a circuit board together with a high-frequency switch, constitutes a composite high-frequency component together with the high-frequency switch, and significantly reduces and prevents deterioration of filter characteristics of the composite high-frequency component. A first input terminal is located on a first corner portion of a second principal surface of a wiring board. A second input terminal is located on the second principal surface of the wiring board and along a first long side or a first short side so as to be next to the first input terminal. First and second output terminals are arranged on an edge portion of the second principal surface of the wiring board on a second long side and along the second long side.03-21-2013
20090267707ELASTIC WAVE DEVICE - An elastic wave device is described which includes a piezoelectric substrate, comb-shaped electrodes having teeth electrodes that are disposed so as to face each other on the piezoelectric substrate, a non-overlapping area in which the teeth electrodes of the comb-shaped electrodes do not overlap each other, and a overlapping area in which the teeth electrodes overlap each other and the velocity of sound is higher than that in the non-overlapping area.10-29-2009
20120223789ELASTIC-WAVE FILTER DEVICE AND COMPOSITE DEVICE INCLUDING THE SAME - An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.09-06-2012
20110012695ACOUSTIC WAVE DEVICE AND ELECTRONIC APPARATUS USING THE SAME - An acoustic wave device includes a piezoelectric substrate, an IDT electrode on the substrate, an internal electrode above the substrate, a side wall above the internal electrode, a lid on the side wall, an electrode base layer on the internal electrode, a connection electrode on the electrode base layer, and an anti-corrosion layer between the internal electrode and the side wall. The internal electrode is electrically connected to the IDT electrode. The side wall surrounds the IDT electrode. The lid covers the IDT electrode to provide a space above the IDT electrode. The electrode base layer is provided outside the space and the side wall. The anti-corrosion layer protrudes outside the side wall, and is made of material less soluble in plating solution than the internal electrode. This acoustic wave device prevents the internal electrode from breaking due to plating solution, hence being manufactured at a high yield rate.01-20-2011
20090237181SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device which uses a Rayleigh wave as a surface acoustic wave includes an IDT electrode provided on a piezoelectric substrate composed of quartz having Euler angles of (0°±5°, 0° to 140°, 0°±40°), a piezoelectric film composed of c-axis oriented ZnO arranged so as to cover the IDT electrode, and the piezoelectric film has a convex portion provided on a surface thereof corresponding to the thickness of the ID electrode. The IDT electrode is composed of a metal material primarily including Al, Au, Ta, W, Pt, Cu, Ni, or Mo, and when the wavelength of the surface acoustic wave is represented by λ, the primary metal of the IDT electrode, a normalized thickness of the IDT electrode normalized by the wavelength of the surface acoustic wave, and a normalized thickness of the piezoelectric film normalized by the wavelength of the surface acoustic wave are preferably set within the ranges of each combination shown in Table 1.09-24-2009
20120032759Acoustic Wave Device and Method for Manufacturing Same - A SAW device (02-09-2012
20110298565DEVICE AND METHOD FOR CASCADING FILTERS OF DIFFERENT MATERIALS - Some embodiments of the invention provide a filter having at least one first filter, each first filter being a band-reject type filter having a first set of filter parameters that are a function of a first material used to fabricate the at least one first filter, and at least one second filter, each second filter having a second set of filter parameters that are a function of a second material used to fabricate the at least one second filter, each second filter being one of a band-reject type filter and a band pass type filter. The at least one first filter and the at least one second filter are then cascaded together to form the filter. The first material and the second material are different materials. The cascaded filter has a new third set of filter parameters that are a function of both the first material and the second material. Other embodiments of the invention include a method for fabricating the filter and a method of filtering using such a cascaded filter.12-08-2011
20120098625ELECTROSTATIC BONDING OF A DIE SUBSTRATE TO A PACKAGE SUBSTRATE - A transducer apparatus comprises a package substrate and a transducer disposed over a die substrate. The die substrate is disposed over the package substrate. The transducer apparatus also comprises a voltage source connected between the die substrate and the package substrate, and configured to selectively apply an electrostatic attractive force between the die substrate and the package substrate.04-26-2012
20090278629COMPOSITE FILTER - A composite filter downsized without degrading its characteristics is disclosed. The filter includes a surface acoustic wave filter and a LC filter coupled to the surface acoustic wave filter. The LC filter is formed by combining a π-shaped LC filter formed of two capacitors and an inductor coupled together in a π-shape with a capacitor coupled in parallel to the inductor. The two capacitors of the π-shaped LC filter are placed on a piezoelectric substrate with their comb-shaped electrodes opposed to each other. This opposing direction differs from an opposing direction of comb-shaped electrodes of a surface acoustic wave resonator.11-12-2009
20090085692Elastic wave filter - In an elastic wave filter in which an IDT is configured in a tapered shape, an object of the present invention is to provide a technology capable of suppressing deterioration of attenuation characteristics due to refraction and the like of the elastic wave and also suppressing loss. Then, an input side area adjacent to an input side tapered IDT electrode of this short grating electrode and an output side area close to an output side tapered IDT electrode are made patterns continuous (as if extended) from the input side tapered IDT electrode and the output side tapered IDT electrode respectively. The areas between the input side tapered IDT electrode, the output side tapered IDT electrode and the short grating electrode are set in a manner that the cycle unit λ which is a repeating unit of the electrode fingers is continued without breaking.04-02-2009
20120139665WIDE BANDWIDTH SLANTED-FINGER CONTOUR-MODE PIEZOELECTRIC DEVICES - Contour-mode piezoelectric devices and methods of forming contour mode piezoelectric devices. The contour mode piezoelectric device includes a piezoelectric film having first and second surfaces and suspended so that it is spaced away from a substrate. The contour mode piezoelectric device also includes first and second patterned electrodes respectively disposed on the first and second surfaces of the piezoelectric film, at least one of the first and second patterned electrodes having variable width along a length thereof.06-07-2012
20090153269ACOUSTIC WAVE FILTER - An acoustic wave filter includes: a first acoustic wave filter having a first group of multimode filters connected, a first unbalanced input node and two first balanced output nodes, a first multimode filter among the first group of multimode filters being connected to the two first balanced output nodes; and a second acoustic wave filter having a second group of multimode filters, a second unbalanced input node and two second balanced output nodes, a second multimode filter among the second group of multimode filters having an aperture length different from that of the first multimode filter and a connection with the two second balanced output nodes, the first and second multimode filters having different pass bands. One of the two first balanced output nodes and one of the two second balanced output nodes are unified, and the other first balanced output node and the other second balanced output node are unified.06-18-2009
20090002099Elastic Wave Device - In an elastic wave device including an input side electrode and an output side electrode being a resonant single-phase unidirectional transducers (RSPUDT) provided with respective pairs of bus bars opposing to each other on a piezoelectric substrate and a number of excitation electrode fingers extending in a comb-teeth shape so as to respectively cross each other from the respective bus bars, the elastic waves are repeatedly reflected and amplified between the central part of the input side electrode and the central part of the output side electrode along the direction of extension of the respective bus bars by the excitation electrode fingers of the input side electrode and the output side excitation electrode, the elastic wave device includes a damper at least on either one of the input side bus bar or the output side bus bar in an area between the central part of the input side electrode in the direction of movement of the elastic waves and the central part of the output side electrode in the direction of movement of the elastic waves so that the energy leaked out into the bus bar is absorbed.01-01-2009
20090167462Band Pass Filter - A band pass filter includes partial filters, each of which has a pass band. Pass bands of different ones of the partial filters have center frequencies that are different. A partial filter with a lowest center frequency has a pass band with a first low-frequency edge and a first high-frequency edge. The first low-frequency edge is steeper than first high-frequency edge. A partial filter with a highest center frequency has a pass band with a second low-frequency edge and a second high-frequency edge. The second high-frequency edge is steeper than the second low-frequency edge.07-02-2009
20080290968BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A boundary acoustic wave device includes a first medium, a second medium, and an IDT electrode disposed at an interface between the first medium and the second medium, the IDT electrode having an Au layer defining a main electrode layer, wherein a Ni layer is laminated so as to contact at least one surface of the Au layer, and a portion of Ni defining the Ni layer is diffused from the Ni layer side surface of the Au layer toward the inside of the Au layer.11-27-2008
20080272858Surface Acoustic Wave Device - A surface acoustic wave device having a three-layered structure of sealing resin for sealing a mounting substrate and a surface acoustic wave element in which the elastic modulus of resin of the intermediate layer is higher than that of resin of the outermost layer and the elastic modulus of resin of the innermost layer is lower than that of resin of the outermost layer. The three-layered structure of the sealing resin suppresses crush of a bump when a pressure is applied from the outside and reduces stress applied to the bump due to the change in temperature.11-06-2008
20080315972Acoustic Wave Transducer and Filter Comprising Said Transducer - A transducer includes an acoustic track in which an acoustic wave can be propagated, the acoustic track having a transversal fundamental mode, the acoustic track being subdivided in a transversal direction into an excitation area and two peripheral areas. The transducer also includes a first outside area and a second outside area bordering the acoustic track such that the acoustic track is arranged in the transversal direction between the first and second outside area. The transducer also includes peripheral areas configured such that the longitudinal phase velocity v12-25-2008
20080211602High-Frequency Acoustic Wave Device - An acoustic wave device comprising a piezoelectric layer on an omnidirectional acoustic mirror and excitation and/or reception means on a surface of said piezoelectric layer, capable of exciting waves in a band gap of the acoustic mirror.09-04-2008
20080258844METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE - A method for manufacturing a surface acoustic wave filter device includes a step of forming grooves in one principal surface of a piezoelectric substrate, a step of embedding a metallic film in the grooves to form IDT electrodes, a step of performing a process of removing a portion of the piezoelectric substrate from the one principal surface of the piezoelectric substrate, thereby forming a recessed portion including the bottom surface in which the IDT electrodes are embedded, and a step of bonding a cover member to the piezoelectric substrate.10-23-2008
20110204998ELASTIC WAVE ELEMENT AND ELECTRONIC DEVICE USING THE SAME - Offers elastic wave device that has convex portion on the top face of first dielectric layer over IDT electrode when elastic wave device has a structure of a boundary wave device in which a film thickness of second dielectric layer is not less than 1.6 times as much as pitch width p of IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.08-25-2011
20110221546ELASTIC WAVE DEVICE - An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, an internal electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a support pillar disposed on the piezoelectric substrate and provided around the IDT electrode, a top panel provided on the support pillar to cover a space above the IDT electrode, an insulation protector provided to cover the support pillar and the top panel, an external electrode disposed on the insulation protector, a conductor pattern disposed on the insulation protector in order to obtain inductance, and a connection electrode provided through the insulation protector, to connect the external electrode and the internal electrode to each other.09-15-2011
20110140808ELASTIC WAVE DEVICE - An elastic wave device that suppresses high-frequency spurious components caused by unwanted waves, such as bulk waves, and improves filter characteristics, includes a piezoelectric substrate, an electrode structure including an IDT electrode provided on the substrate, a first wiring portion that is electrically connected to the IDT electrode, and a second wiring portion provided on a first insulating film that includes a through-hole partially exposing the first wiring portion therethrough. The second wiring portion extends into the through-hole and is electrically connected to the first wiring portion. The second wiring portion is arranged over an area other than the area in which the IDT electrode is disposed.06-16-2011
20090096551SURFACE ACOUSTIC WAVE ELEMENT, SURFACE ACOUSTIC WAVE APPARATUS, AND COMMUNICATION APPARATUS - The invention provides a surface acoustic wave element having improved heat dissipation and power durability. These characteristics are achieved by configuring the SAW such that either of an input or ground electrode is disposed between serial arm portions of the SAW comprising resonators.04-16-2009
20090201102BOUNDARY ACOUSTIC WAVE ELEMENT, BOUNDARY ACOUSTIC WAVE DEVICE, AND MANUFACTURING METHODS FOR THE SAME - A boundary acoustic wave element includes an IDT electrode arranged at the interface between a piezoelectric substance and a dielectric layer, a heat dissipation film is arranged on the outer side surface of the dielectric layer or on the outer side surface of a sound-absorbing film laminated on the outer side of the dielectric layer, the heat dissipation film is arranged to have a portion that overlaps the IDT electrode in plan view, and the heat dissipation film is connected to a bump provided on the outer side surface of the sound-absorbing film, and is connected to a via-hole conductor that extends through the sound-absorbing film. The boundary acoustic wave element and a boundary acoustic wave device are excellent in a heat dissipation property and hence can provide enhanced electric power resistance, without causing an increase in chip size and an increase in the area of the mounting space.08-13-2009
20100182101COMPOSITE SUBSTRATE AND ELASTIC WAVE DEVICE USING THE SAME - A composite substrate 07-22-2010
20100259342BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a piezoelectric substrate having an upper surface in which grooves are provided, IDT electrodes which are at least partially embedded in the grooves in the upper surface of the piezoelectric substrate in a thickness direction of the IDT electrodes, and first and second dielectric layers stacked on the upper surface of the piezoelectric substrate. The second dielectric layer has an acoustic velocity greater than that of the first dielectric layer.10-14-2010
20100259341Surface Acoustic Wave Device and Communication Device - To provide a communication apparatus and a SAW device wherein the steepness in the vicinity of the outside of the lower frequencies of a passband can be improved. On a piezoelectric board 10-14-2010
20130187730ACOUSTIC WAVE DEVICE AND FABRICATION METHOD OF THE SAME - An acoustic wave device includes: a substrate; an input terminal that is located on a first surface of the substrate, and to which a high-frequency signal is input; a resonator that is connected to the input terminal, and to which a high-frequency signal input to the input terminal is input; and an insulating layer that is located between the input terminal and the substrate, and has a permittivity smaller than that of the substrate.07-25-2013
20090295507ACOUSTIC WAVE ELEMENT - An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.12-03-2009
20080309433Elastic Wave Filter and Communication Device Equipped With the Elastic Wave Filter - An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.12-18-2008
20110102107FILTER, PORTABLE TERMINAL AND ELECTRONIC COMPONENT - An object is to obtain a steep and large attenuation amount in attenuation bands close to each other out of a band of a TV wave and to provide a filter in which the use number of inductors is reduced thereby to be able to contribute to downsizing of a device. Elastic wave resonators of a plurality of parallel arms for each forming plurality of attenuation band are connected to the same electric potential point in a signal path without aid of an inductor. Otherwise, a series circuit of a plurality of element parts generating series resonance is connected in a signal path as a parallel arm. Therefore, a large attenuation amount can be obtained in each of the plural attenuation bands, but a region equivalent to what is called a zero point exists between adjacent poles. However, there can be obtained a characteristic in which steep attenuations occur in both sides of the zero point even if the zero point exists. Sets of elastic wave resonators (sets of resonators) connected to the same potential points or parallel arms constituted by the series circuits are connected in a signal path in a plurality of stages, and an inductor for inverting a phase intervenes between the stages.05-05-2011
20090201103SURFACE ACOUSTIC WAVE FILTER DEVICE - A first and a second longitudinally coupled resonator-type surface acoustic wave filter are disposed on a piezoelectric substrate. One end of a first IDT arranged at the middle of the first longitudinally coupled resonator-type surface acoustic wave filter is connected to a first unbalanced terminal, and one end of a first IDT arranged at the middle of the second longitudinally coupled resonator-type surface acoustic wave filter is connected to a second unbalanced terminal. Signal terminals of second IDTs of the first and the second longitudinally coupled resonator-type surface acoustic wave filter are connected to each other with a first signal line. Third IDTs are connected to each other with a second signal line. A capacitor is connected between the first and the second signal line. The above arrangement provides a cascaded longitudinally coupled resonator-type surface acoustic wave filter device including an inter-stage capacitor is miniaturized.08-13-2009
20090072926Saw filter frequency characteristic control - An apparatus in one example comprises an insulating piezoelectric layer, a base electrode along a first side of the insulating piezoelectric layer, and at least one gradient electrode along a second side of the insulating piezoelectric layer. The at least one gradient electrode is configured to provide a voltage gradient across an aperture of a surface acoustic wave (SAW) filter. The base electrode and the at least one gradient electrode are configured to provide a voltage bias across the insulating piezoelectric layer. The voltage bias comprises a gradient based on the voltage gradient across the aperture of the SAW filter. The base electrode and the at least one gradient electrode are configured to control at least one frequency characteristic of the SAW filter based on the voltage bias across the insulating piezoelectric layer.03-19-2009
20110001581ACOUSTIC WAVE DEVICE - An acoustic wave device includes an input terminal; a balun that is connected to the input terminal, converts a signal input from the input terminal into two anti-phase signals, and outputs the two anti-phase signals; and a filter that is connected to the balun, and outputs the two anti-phase signals input from the balun as balanced output signals. An output impedance of the balun is equal to an input impedance of the filter, and is larger than an output impedance of the filter.01-06-2011
20100219910Surface acoustic wave device - A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.09-02-2010
20100219911ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME - A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.09-02-2010
20100188173ACOUSTIC WAVE DEVICE, TRANSMISSION APPARATUS, AND ACOUSTIC WAVE DEVICE MANUFACTURING METHOD - A first acoustic wave device includes a second acoustic wave device. The second acoustic wave device includes a substrate made of a piezoelectric material, a pair of interdigital electrodes formed on the substrate, each of the intergidital electrodes including a plurality of electrode fingers, and a adjustment medium. The adjustment medium includes at least a single layer and is formed on at least a part of the pair of the intergidital electrodes. The adjustment medium further includes a thick portion and a thin portion being null or thinner than the thick portion, an area of the thick portion opposed to a region being determined according to a predetermined characteristic value, the area including the intergital electrodes and a plurality of spaces between the electrode fingers adjacent each other.07-29-2010
20090322449Transversal type filter - To provide a transversal type filter having weighted finger electrodes of at least either of an input IDT and an output IDT provided on a piezoelectric substrate, in which a diffraction of elastic wave output from an end face of the weighted IDT electrode is suppressed, a band width is wide, and a high flatness and a high selectivity are realized. In at least either of an input IDT and an output IDT, an apodized region in which a weighting is performed by using an apodizing method with which an aperture of finger electrodes is continuously changed is formed on a center portion of the electrode with respect to a propagation direction of an elastic wave, and dog-leg regions in which a weighting is performed by using a dog-leg method with which the aperture is made into 1/n by floating electrodes to form n tracks are formed on both sides of the apodized region. Subsequently, finger electrodes in each track of the dog-leg region are further weighted by using the apodizing method.12-31-2009
20100052818MULTI-CHANNEL SURFACE ACOUSTIC WAVE FILTER DEVICE WITH VOLTAGE CONTROLLED TUNABLE FREQUENCY RESPONSE - A multi-channel surface acoustic wave (SAW) filter includes a voltage controlled velocity tunable piezoelectric substrate, an input transducer fabricated on the substrate, and an output transducer fabricated on the substrate. The input transducer further includes multiple input sub-transducers that are electrically and physically connected in parallel. The output transducer further includes multiple output sub-transducers that are electrically and physically connected in parallel. Corresponding pairs of input sub-transducers and output sub-transducers form multiple parallel channels for SAW propagation. The input transducer produces a voltage controlled tunable COMB frequency response that is combined with a voltage controlled tunable COMB frequency response produced by the output transducer to produce a SAW filter voltage controlled tunable frequency response. Further embodiments include a multi-channel SAW resonator, a SAW filter device connecting two novel SAW filters in series, and a SAW filter device connecting two novel SAW resonators in series.03-04-2010
20080204167METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE DEVICE - A method for manufacturing a surface acoustic wave device includes the steps of forming an IDT electrode, a first wiring pattern, and a third wiring pattern on a piezoelectric substrate, forming an insulating film covering the IDT electrode and the wiring patterns, forming a photosensitive resin film, obtaining the photosensitive resin film, and forming a second wiring pattern on an insulating layer composed of the insulating film and the photosensitive resin film laminated on the insulating film so that the second wiring pattern three-dimensionally crosses the first wiring pattern.08-28-2008
20110260809SURFACE ACOUSTIC WAVE DEVICE AND SURFACE ACOUSTIC WAVE OSCILLATOR - A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (φ, θ, ψ) of (0°, 95°≦θ≦155°, 33°≦|ψ|≦46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.10-27-2011
20110095850Notched saw image frequency rejection filter system - A notched SAW image frequency rejection filter system includes a SAW filter having an input, an output and a ground output and an impedance matching network including a first matching inductance connected to the SAW filter output and a second matching inductance connected to the ground output of the SAW filter; the SAW filter having an inherent internal capacitance that produces a predetermined capacitive leakage current at the image frequency; an inherent internal inductance that produces an inductance leakage current at the image frequency; and a boosted inherent parasitic ground inductance at the ground output of the SAW filter for generating a voltage across the second matching inductance to produce a compensation current which is substantially opposite in phase and substantially matched in magnitude with the capacitive leakage current for reducing the capacitive leakage current and increasing the image frequency rejection.04-28-2011
20110133857INTERFACE ACOUSTIC WAVE DEVICE - The present invention relates to the field of acoustic wave devices, and particularly to that of transducers capable of operating at very high frequencies, from a few hundred MHz to several gigahertz, and its subject is more particularly an interface acoustic wave device including at least two substrates and a layer of ferroelectric material, the latter being contained between a first electrode and a second electrode and having first positive-polarization domains and second negative-polarization domains, the first and second domains being alternated, wherein the assembly constituted by the first electrode, the layer of ferroelectric material, and the second electrode is contained between a first substrate and a second substrate.06-09-2011
20100019867Piezoelectric component and manufacturing method thereof - The invention relates to a piezoelectric component and a manufacturing method thereof, that includes: a first piezoelectric element composed of a piezoelectric substrate, comb-shaped electrodes formed on a principal surface of the piezoelectric substrate, and wiring electrodes having element wiring disposed adjacent to the comb-shaped electrodes; terminal electrodes formed on the piezoelectric substrate; and a plurality of second piezoelectric elements on the principal surfaces of which are formed solder electrodes which contact the terminal electrodes, and comb-shaped electrodes and wiring electrodes. The second piezoelectric elements are sealed by a resin seal layer composed of a photosensitive resin sheet such that a hollow section is formed between both principal surfaces with the principal surface of the first piezoelectric element and the principal surface of the second piezoelectric element opposed, and comprise through electrodes which penetrate the resin seal layer and contact the terminal electrodes at their top end section. Small size, high performance, and cost reduction for the piezoelectric component is realized by the present invention.01-28-2010
20120146746Surface Acoustic Wave Device - A SAW device 06-14-2012
20120306594ACOUSTIC WAVE DEVICE - An acoustic wave device has a substrate and adjacent IDT electrodes. One IDT electrode has a signal connecting bus bar at one side in a direction orthogonal to a propagation direction and is connected to a signal line. A ground bus bar is grounded and located at the other side in the orthogonal direction. The other IDT electrode has a signal connecting bus bar which is located at the other side in the orthogonal direction and is connected to a signal line. A ground bus bar is grounded and located at the one side in the orthogonal direction. The acoustic wave device further has a floating member on the substrate, which is located at a space between the ground bus bar of the IDT electrode and the signal connecting bus bar of the IDT electrode and is not connected to the ground bus bar nor the signal connecting bus bar.12-06-2012
20120146745VARIABLE ACOUSTIC GRATING BASED ON CHANGING ACOUSTIC IMPEDANCES - An embodiment is a variable acoustic grating. Each of the local grating structures in an array of local grating structures has a variable impedance such that the impedance is modified, steering an ultrasonic signal impinging on the array in a reflection or transmission mode through a medium.06-14-2012
20120105174SINGLE-INPUT MULTI-OUTPUT SURFACE ACOUSTIC WAVE DEVICE - A single-input multi-output surface acoustic wave (“SAW”) device contains two or more output inter-digital transducers (“IDTs”) arranged in a longitudinal direction of a single input IDT. The detection sensitivity and reliability of the SAW device may be improved by eliminating the deviation and signal interference between multiple input IDTs.05-03-2012
20110156840SURFACE ACOUSTIC WAVE DEVICE, OSCILLATOR, MODULE APPARATUS - A surface acoustic wave device includes: a sapphire substrate having a C-plane main surface; an aluminum nitride film which is formed on the main surface of the sapphire substrate; comb-like electrodes which are formed on the surface of the aluminum nitride film to excite surface acoustic waves; and a silicon dioxide film which covers the comb-like electrodes and the surface of the aluminum nitride film.06-30-2011
20110080234BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes an electrode structure that is provided at the interface between a piezoelectric substrate and a dielectric layer. The electrode structure defines a ladder filter in which at least two ground pads of a plurality of ground pads, to be connected to a ground potential, provided on the piezoelectric substrate are electrically connected by a connection conductor provided on the dielectric layer, and all of the ground pads are electrically connected.04-07-2011
20120119849ACOUSTIC WAVE DEVICE - An acoustic wave device includes a supporting substrate made of lithium tantalate, an element substrate made of lithium tantalate, and having a lower surface bonded to and arranged on an upper surface of the supporting substrate, and a comb-like electrode formed on an upper surface of the element substrate and exciting an acoustic wave. A propagation direction of the acoustic wave in the element substrate is an X-axis of the acoustic wave. A normal direction of the upper surface of the supporting substrate is an X-axis or a Y-axis of the supporting substrate. The propagation direction of the acoustic wave is not parallel to a Z-axis of the supporting substrate.05-17-2012
20100289600ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An elastic wave device has a structure that prevents flux from flowing into a hollow space of the device during mounting of the device using solder bumps. The elastic wave device includes a substrate, a vibrating portion located on a first main surface of the substrate, pads located on the first main surface of the substrate and electrically connected to electrodes of the vibrating portion, a supporting layer arranged on the first main surface of the substrate so as to enclose the vibrating portion, a sheet-shaped cover layer composed of resin including synthetic rubber and disposed on the supporting layer so as to form a hollow space around the periphery of the vibrating portion, a protective layer composed of resin having resistance to flux and disposed on a side of the cover layer remote from the supporting layer, via conductors extending through the protective layer, the cover layer, and the supporting layer and connected to the pads, and external electrodes including solder bumps, disposed at ends of the via conductors adjacent to the protective layer11-18-2010
20100052819ACOUSTIC WAVE DEVICE AND SYSTEM - An acoustic wave device includes: a piezoelectric substrate; at least five IDTs (InterDigital Transducers) arranged on the substrate in directions of SAW (Surface Acoustic Wave) propagation; and two balanced terminals connected to two first IDTs that are two out of the at least five IDTs and are 180 degrees out of phase. One of a pair of comb electrodes of one of the two first IDTs is connected to one of the two balanced terminals, and one of a pair of comb electrodes of the other one of the two first IDTs being connected to the other one of the two balanced terminals. The other comb electrodes of the two first IDTs are connected in series, and one of a pair of comb electrodes that form an IDT that is included in the at least five IDTs and is not connected to the two first IDTs is grounded.03-04-2010
20100001814THIN FILM ACOUSTIC REFLECTOR STACK - The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.01-07-2010
20120182091ACOUSTIC WAVE DEVICE AND METHOD FOR PRODUCING SAME - An acoustic wave device comprises a substrate and an acoustic wave element on one main surface of the substrate. Side surfaces of the substrate comprises a protruding portion which protrudes out at a side of an another main surface closer than a side with the one main surface side.07-19-2012
20120319802ACOUSTIC WAVE DEVICE - A SAW device (12-20-2012
20100231330Component Working with Guided Bulk Acoustic Waves - A component working with guided bulk acoustic waves is disclosed with at least one substrate and a layer system that is connected to this substrate and suitable for wave propagation. The layer system includes a metallization layer, a first dielectric layer, and a second dielectric layer. The velocity of the acoustic wave is greater in the second dielectric layer than in the first dielectric layer. At least one of the dielectric layers contains TeO09-16-2010
20120326808MICRO-ACOUSTIC FILTER HAVING COMPENSATED CROSS-TALK AND METHOD FOR COMPENSATION - The invention relates to a micro-acoustic filter having a first and a second converter, in which the electromagnetic and capacitive cross-talk between the first and second converters is compensated for by providing additional coupling capacitors and additional current loops. Additional coupling capacitors and current loops are arranged in such a manner that they can counteract the sign of the natural coupling specified by the design and thus completely compensate for said coupling.12-27-2012
20130021116ELASTIC WAVE DEVICE - An elastic wave device includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a capacitive electrode that is located on the piezoelectric substrate and is connected in series with the IDT electrode. The capacitive electrode includes a plurality of capacitive electrode portions, each of which includes a pair of mutually interdigitated comb-shaped electrodes. The plurality of capacitive electrode portions are connected with each other in parallel. The plurality of capacitive electrode portions are arranged such that an intersecting width direction D01-24-2013
20080224799SAW FILTER DEVICE - A SAW filter device includes a SAW filter chip in which one-port surface acoustic wave resonators each including an IDT made of Al or an Al alloy, are provided on a θ-rotated Y-cut X-propagation LiNbO09-18-2008
20130176087ELASTIC WAVE FILTER - An elastic wave filter that prevents damage caused by ESD is constructed such that a distance between an electrode finger or a dummy electrode of a first IDT electrode and an adjacent electrode finger or an adjacent dummy electrode of a fourth comb-shaped electrode, which is a floating electrode that is not connected to any of an input terminal, output terminals, and a ground terminal, is longer than a distance between the electrode finger or the dummy electrode of the first IDT electrode and an adjacent electrode finger or an adjacent dummy electrode of a third comb-shaped electrode, which is connected to the input terminal, the output terminal, or the ground terminal.07-11-2013
20130093537ACOUSTIC WAVE DEVICE - An acoustic wave device includes: an electrode that is located on a substrate and excites an acoustic wave; and an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.04-18-2013
20130187729SWITCHABLE FILTERS AND DESIGN STRUCTURES - Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.07-25-2013
20130120084SAW Filter Operating in a Balanced/Unbalanced Manner - A SAW filter has two DMS tracks. Each DMS track includes six converters, with two converters each acting as input or output converters. The two DMS tracks are electrically connected in series by way of four pairs of coupling converters and the associated coupling lines. A common inner ground line is provided between the two DMS tracks, which extends over the entire length of the DMS tracks and crosses the coupling lines. The input converters of the first DMS track are connected to an asymmetrical port, while the output converters of the second DMS track are connected to a symmetrical port.05-16-2013
20120280768ELASTIC WAVE DEVICE - An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, a wiring electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a first insulator disposed on the piezoelectric substrate to seal the IDT electrode and the wiring electrode, a resin layer provided on the first insulator, an inductor electrode disposed on the resin layer, a second insulator disposed on the resin layer to cover the inductor electrode, a terminal electrode disposed on the second insulator, and a connecting electrode passing through the first insulator, the second insulator, and the resin layer to electrically connect the wiring electrode, the terminal electrode, and the inductor electrode. The first insulator includes a resin and filler dispersed in the resin. A density of filler in the resin layer is smaller than an average density of the filler in the first insulator. This elastic wave device has excellent characteristics of the inductor while reducing variations of the characteristics.11-08-2012
20130207747ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE DEVICE USING SAME - A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.08-15-2013

Patent applications in class Using surface acoustic waves

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