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SOLID STATE ACTIVE ELEMENT OSCILLATOR

Subclass of:

331 - Oscillators

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
331108000 Transistors 300
331107000 Tunnel diode oscillators 9
331107000 Acoustoelectric device oscillators 5
20130082787Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe04-04-2013
20120092078VARIABLE RESISTOR CIRCUIT AND OSCILLATION CIRCUIT - A variable resistor circuit is arranged to adjust a resistivity value between a first terminal and a second terminal thereof according to a control signal. The variable resistor circuit includes a first resistivity adjusting circuit and a second resistivity adjusting circuit. The first resistivity adjusting circuit includes a first series resistor circuit formed of a plurality of resistor elements and a first switch portion for selectively connecting one of specific nodes of the first series resistor circuit to the first terminal according to the control signal. The second resistivity adjusting circuit includes a second series resistor circuit formed of a plurality of resistor elements connected to the second terminal and a second switch portion for selectively connecting the first series resistor circuit to one of specific nodes of the second series resistor circuit according to the control signal.04-19-2012
20100060369OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.03-11-2010
20110304403Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.12-15-2011
20120056684METHOD OF FABRICATING RESONATOR, RESONATOR, AND OSCILLATOR - There is provided a method of fabricating a resonator, the method includes, joining a vibrating plate with a substrate at a first surface thereof, grinding a surface of the vibrating plate joined with the substrate, forming an electrode on the ground surface of the vibrating plate, and etching electively a region at a second surface of the substrate, where the second surface is opposite to the first surface and the region is corresponding to a position of the electrode.03-08-2012
20110080221Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.04-07-2011
20090273404Frequency Adjustable Surface Acoustic Wave Oscillator - A frequency adjustable surface acoustic wave oscillator uses circuitry in which the phase relationship between the corresponding input and output signals and the voltage applied to or received by transducer fingers is controlled in such a manner that the frequency of the surface acoustic wave oscillator is arbitrarily controlled over a wide range by digital means. This provides an oscillator that exhibits a wide tunable frequency range while providing low phase noise.11-05-2009
20090160567Oscillator Circuit with Acoustic Single-Port Surface Wave Resonators - The invention refers to the electrical engineering/electronics field and relates to an oscillator circuit consisting of a combination of two frequency-determining elements and one active electronic circuit, wherein the frequency-determining elements are designed as single-port surface wave resonators with interdigital converters. According to the invention, the two single-port surface wave resonators are connected to each other, avoiding inductive components whereas, in the case of a combination in a parallel circuit, the connection is designed as a combination oscillating at high-frequency anti-resonance, and in the case of a combination in a series circuit, the combination is designed as a combination oscillating at high-frequency resonance. In addition, according to the invention, the ratio of the apertures of the interdigital converters to one another, the ratio of their number of prongs to one another, and the thickness of the electrode layer of the single-port surface wave resonators as well as the propagation direction for acoustic surface waves of the single-port surface wave resonators are selected so that the temperature-dependent change of the phase of the combination and the temperature-dependent change of the total phase of the rest of the elements of the oscillator circuit have signs opposite to one another and that the sum of these phase changes in the thermal operating range of the oscillator circuit is smaller than the value of the phase change of the combination and smaller than the value of the phase change of the rest of the elements of the oscillator circuit. The invention can be used with oscillators and sensors based on acoustic surface waves, in particular with components for which the temperature response of the oscillator frequency can be set.06-25-2009
20090160568CIRCUIT AND METHOD FOR A WIRELESS ACCESSORY OF A MOBLIE DEVICE - The invention relates to a circuit and method for a wireless accessory of a portable computer. The circuit comprises an oscillator circuit (06-25-2009
20090201096OSCILLATOR - This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.08-13-2009
20120206209System and Method for Reducing Temperature-and Process-Dependent Frequency Variation of a Crystal Oscillator Circuit - An oscillator may include a crystal resonator, an active element coupled in parallel with the crystal resonator and configured to produce at its output a waveform with an approximate 180-degree phase shift from its input, a voltage regulator a voltage regulator coupled to the active element, a sum of thresholds circuit coupled to the input of the voltage regulator, and a temperature-dependent current source coupled to the input of the voltage regulator. The voltage regulator may be configured to supply a supply voltage to the active element, the supply voltage a function of a reference voltage received at an input of the voltage regulator. The sum of thresholds circuit may be configured to generate the reference voltage such that the reference voltage is process-dependent. The temperature-dependent current source may be configured to generate a temperature-dependent current such that the reference voltage is temperature-dependent.08-16-2012
20100073099STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK - A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.03-25-2010
20120286886Electromechanical Systems Oscillator with Piezoelectric Contour Mode Resonator for Multiple Frequency Generation - Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.11-15-2012
20100164636OSCILLATION DEVICE - To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.07-01-2010
20100045392ELECTROMAGNETIC-WAVE OSCILLATOR - An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.02-25-2010
20100026399Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes - A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tuned to a selected frequency. A different circuit includes a resonant tunneling structure with plural layers, including an outer layer coupled to a further layer made of a material which has a plasma resonance tuned to a selected frequency. Two circuit sections are respectively coupled to the resonant tunneling structure at spaced locations thereon. A bias is applied across the tunneling structure and further layer, and causes the tunneling structure to exhibit a negative resistance.02-04-2010
20100007426NONLINEAR PULSE OSCILLATOR METHODS AND APPARATUS - Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.01-14-2010
20090051452Oscillation device and inspection apparatus - An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.02-26-2009
20120105161OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT - An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.05-03-2012
20100026401Terahertz oscillation device - A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.02-04-2010
20120001698OSCILLATOR - An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.01-05-2012
20100026400RESONANT TUNNELING STRUCTURE - A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E02-04-2010
20090302959SYNCHRONOUS DISTRIBUTED OSCILLATOR - A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f12-10-2009
20100117748Wave Reversing System and Method for a Rotary Traveling Wave Oscillator - Circuitry for establishing a traveling wave on a rotary traveling wave oscillator is described. The circuitry includes a gain portion that establishes a wave in a preferred direction by degenerating any wave traveling opposite to the preferred direction and regenerating any wave traveling in the preferred direction. If there are two such gain portions, each having opposite preferred directions, then a wave that is presently established in one direction can be degenerated and a new wave can be established in the opposite direction, thereby achieving reversibility of the traveling wave in real time. Each of the gain portions included in a plurality of regeneration/degeneration elements present on the rotary oscillator. Each of the regeneration/degeneration elements is connected to a pair of taps on the oscillator, the taps being separated by a direction dependent phase difference.05-13-2010
20110304404SIGNAL GENERATORS BASED ON SOLID-LIQUID PHASE SWITCHING - A phase-change oscillator and pulse generator, and related methods, are provided. The phase-change oscillator and pulse generator can include a capacitor, a switching element coupled in parallel connection with the capacitor, and a resistor coupled in series with the switching element and configured to supply a bias voltage to the switching element. The switching element can have a low-resistance state in a liquid-phase and a high-resistance state in a solid phase. In addition, the switching element can have a negative thermal coefficient of resistance. In an aspect, the switching element comprises a wire of a semiconducting material having negative thermal coefficient of resistance, such semiconducting material can be doped n-type or p-type. In an aspect, the liquid-phase is a molten state of the wire and the solid-phase is a solid state of the wire. An oscillatory signal is based at least on transitioning between the molten state and the solid state.12-15-2011
331107000 Significant distributed parameter resonator (e.g., cavity) 4
20130082787Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe04-04-2013
20120092078VARIABLE RESISTOR CIRCUIT AND OSCILLATION CIRCUIT - A variable resistor circuit is arranged to adjust a resistivity value between a first terminal and a second terminal thereof according to a control signal. The variable resistor circuit includes a first resistivity adjusting circuit and a second resistivity adjusting circuit. The first resistivity adjusting circuit includes a first series resistor circuit formed of a plurality of resistor elements and a first switch portion for selectively connecting one of specific nodes of the first series resistor circuit to the first terminal according to the control signal. The second resistivity adjusting circuit includes a second series resistor circuit formed of a plurality of resistor elements connected to the second terminal and a second switch portion for selectively connecting the first series resistor circuit to one of specific nodes of the second series resistor circuit according to the control signal.04-19-2012
20100060369OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.03-11-2010
20110304403Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.12-15-2011
20120056684METHOD OF FABRICATING RESONATOR, RESONATOR, AND OSCILLATOR - There is provided a method of fabricating a resonator, the method includes, joining a vibrating plate with a substrate at a first surface thereof, grinding a surface of the vibrating plate joined with the substrate, forming an electrode on the ground surface of the vibrating plate, and etching electively a region at a second surface of the substrate, where the second surface is opposite to the first surface and the region is corresponding to a position of the electrode.03-08-2012
20110080221Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.04-07-2011
20090273404Frequency Adjustable Surface Acoustic Wave Oscillator - A frequency adjustable surface acoustic wave oscillator uses circuitry in which the phase relationship between the corresponding input and output signals and the voltage applied to or received by transducer fingers is controlled in such a manner that the frequency of the surface acoustic wave oscillator is arbitrarily controlled over a wide range by digital means. This provides an oscillator that exhibits a wide tunable frequency range while providing low phase noise.11-05-2009
20090160567Oscillator Circuit with Acoustic Single-Port Surface Wave Resonators - The invention refers to the electrical engineering/electronics field and relates to an oscillator circuit consisting of a combination of two frequency-determining elements and one active electronic circuit, wherein the frequency-determining elements are designed as single-port surface wave resonators with interdigital converters. According to the invention, the two single-port surface wave resonators are connected to each other, avoiding inductive components whereas, in the case of a combination in a parallel circuit, the connection is designed as a combination oscillating at high-frequency anti-resonance, and in the case of a combination in a series circuit, the combination is designed as a combination oscillating at high-frequency resonance. In addition, according to the invention, the ratio of the apertures of the interdigital converters to one another, the ratio of their number of prongs to one another, and the thickness of the electrode layer of the single-port surface wave resonators as well as the propagation direction for acoustic surface waves of the single-port surface wave resonators are selected so that the temperature-dependent change of the phase of the combination and the temperature-dependent change of the total phase of the rest of the elements of the oscillator circuit have signs opposite to one another and that the sum of these phase changes in the thermal operating range of the oscillator circuit is smaller than the value of the phase change of the combination and smaller than the value of the phase change of the rest of the elements of the oscillator circuit. The invention can be used with oscillators and sensors based on acoustic surface waves, in particular with components for which the temperature response of the oscillator frequency can be set.06-25-2009
20090160568CIRCUIT AND METHOD FOR A WIRELESS ACCESSORY OF A MOBLIE DEVICE - The invention relates to a circuit and method for a wireless accessory of a portable computer. The circuit comprises an oscillator circuit (06-25-2009
20090201096OSCILLATOR - This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.08-13-2009
20120206209System and Method for Reducing Temperature-and Process-Dependent Frequency Variation of a Crystal Oscillator Circuit - An oscillator may include a crystal resonator, an active element coupled in parallel with the crystal resonator and configured to produce at its output a waveform with an approximate 180-degree phase shift from its input, a voltage regulator a voltage regulator coupled to the active element, a sum of thresholds circuit coupled to the input of the voltage regulator, and a temperature-dependent current source coupled to the input of the voltage regulator. The voltage regulator may be configured to supply a supply voltage to the active element, the supply voltage a function of a reference voltage received at an input of the voltage regulator. The sum of thresholds circuit may be configured to generate the reference voltage such that the reference voltage is process-dependent. The temperature-dependent current source may be configured to generate a temperature-dependent current such that the reference voltage is temperature-dependent.08-16-2012
20100073099STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK - A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.03-25-2010
20120286886Electromechanical Systems Oscillator with Piezoelectric Contour Mode Resonator for Multiple Frequency Generation - Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.11-15-2012
20100164636OSCILLATION DEVICE - To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.07-01-2010
20100045392ELECTROMAGNETIC-WAVE OSCILLATOR - An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.02-25-2010
20100026399Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes - A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tuned to a selected frequency. A different circuit includes a resonant tunneling structure with plural layers, including an outer layer coupled to a further layer made of a material which has a plasma resonance tuned to a selected frequency. Two circuit sections are respectively coupled to the resonant tunneling structure at spaced locations thereon. A bias is applied across the tunneling structure and further layer, and causes the tunneling structure to exhibit a negative resistance.02-04-2010
20100007426NONLINEAR PULSE OSCILLATOR METHODS AND APPARATUS - Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.01-14-2010
20090051452Oscillation device and inspection apparatus - An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.02-26-2009
20120105161OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT - An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.05-03-2012
20100026401Terahertz oscillation device - A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.02-04-2010
20120001698OSCILLATOR - An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.01-05-2012
20100026400RESONANT TUNNELING STRUCTURE - A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E02-04-2010
20090302959SYNCHRONOUS DISTRIBUTED OSCILLATOR - A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f12-10-2009
20100117748Wave Reversing System and Method for a Rotary Traveling Wave Oscillator - Circuitry for establishing a traveling wave on a rotary traveling wave oscillator is described. The circuitry includes a gain portion that establishes a wave in a preferred direction by degenerating any wave traveling opposite to the preferred direction and regenerating any wave traveling in the preferred direction. If there are two such gain portions, each having opposite preferred directions, then a wave that is presently established in one direction can be degenerated and a new wave can be established in the opposite direction, thereby achieving reversibility of the traveling wave in real time. Each of the gain portions included in a plurality of regeneration/degeneration elements present on the rotary oscillator. Each of the regeneration/degeneration elements is connected to a pair of taps on the oscillator, the taps being separated by a direction dependent phase difference.05-13-2010
20110304404SIGNAL GENERATORS BASED ON SOLID-LIQUID PHASE SWITCHING - A phase-change oscillator and pulse generator, and related methods, are provided. The phase-change oscillator and pulse generator can include a capacitor, a switching element coupled in parallel connection with the capacitor, and a resistor coupled in series with the switching element and configured to supply a bias voltage to the switching element. The switching element can have a low-resistance state in a liquid-phase and a high-resistance state in a solid phase. In addition, the switching element can have a negative thermal coefficient of resistance. In an aspect, the switching element comprises a wire of a semiconducting material having negative thermal coefficient of resistance, such semiconducting material can be doped n-type or p-type. In an aspect, the liquid-phase is a molten state of the wire and the solid-phase is a solid state of the wire. An oscillatory signal is based at least on transitioning between the molten state and the solid state.12-15-2011
20130082787Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe04-04-2013
20120092078VARIABLE RESISTOR CIRCUIT AND OSCILLATION CIRCUIT - A variable resistor circuit is arranged to adjust a resistivity value between a first terminal and a second terminal thereof according to a control signal. The variable resistor circuit includes a first resistivity adjusting circuit and a second resistivity adjusting circuit. The first resistivity adjusting circuit includes a first series resistor circuit formed of a plurality of resistor elements and a first switch portion for selectively connecting one of specific nodes of the first series resistor circuit to the first terminal according to the control signal. The second resistivity adjusting circuit includes a second series resistor circuit formed of a plurality of resistor elements connected to the second terminal and a second switch portion for selectively connecting the first series resistor circuit to one of specific nodes of the second series resistor circuit according to the control signal.04-19-2012
20100060369OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.03-11-2010
20110304403Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.12-15-2011
20120056684METHOD OF FABRICATING RESONATOR, RESONATOR, AND OSCILLATOR - There is provided a method of fabricating a resonator, the method includes, joining a vibrating plate with a substrate at a first surface thereof, grinding a surface of the vibrating plate joined with the substrate, forming an electrode on the ground surface of the vibrating plate, and etching electively a region at a second surface of the substrate, where the second surface is opposite to the first surface and the region is corresponding to a position of the electrode.03-08-2012
20110080221Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.04-07-2011
20090273404Frequency Adjustable Surface Acoustic Wave Oscillator - A frequency adjustable surface acoustic wave oscillator uses circuitry in which the phase relationship between the corresponding input and output signals and the voltage applied to or received by transducer fingers is controlled in such a manner that the frequency of the surface acoustic wave oscillator is arbitrarily controlled over a wide range by digital means. This provides an oscillator that exhibits a wide tunable frequency range while providing low phase noise.11-05-2009
20090160567Oscillator Circuit with Acoustic Single-Port Surface Wave Resonators - The invention refers to the electrical engineering/electronics field and relates to an oscillator circuit consisting of a combination of two frequency-determining elements and one active electronic circuit, wherein the frequency-determining elements are designed as single-port surface wave resonators with interdigital converters. According to the invention, the two single-port surface wave resonators are connected to each other, avoiding inductive components whereas, in the case of a combination in a parallel circuit, the connection is designed as a combination oscillating at high-frequency anti-resonance, and in the case of a combination in a series circuit, the combination is designed as a combination oscillating at high-frequency resonance. In addition, according to the invention, the ratio of the apertures of the interdigital converters to one another, the ratio of their number of prongs to one another, and the thickness of the electrode layer of the single-port surface wave resonators as well as the propagation direction for acoustic surface waves of the single-port surface wave resonators are selected so that the temperature-dependent change of the phase of the combination and the temperature-dependent change of the total phase of the rest of the elements of the oscillator circuit have signs opposite to one another and that the sum of these phase changes in the thermal operating range of the oscillator circuit is smaller than the value of the phase change of the combination and smaller than the value of the phase change of the rest of the elements of the oscillator circuit. The invention can be used with oscillators and sensors based on acoustic surface waves, in particular with components for which the temperature response of the oscillator frequency can be set.06-25-2009
20090160568CIRCUIT AND METHOD FOR A WIRELESS ACCESSORY OF A MOBLIE DEVICE - The invention relates to a circuit and method for a wireless accessory of a portable computer. The circuit comprises an oscillator circuit (06-25-2009
20090201096OSCILLATOR - This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.08-13-2009
20120206209System and Method for Reducing Temperature-and Process-Dependent Frequency Variation of a Crystal Oscillator Circuit - An oscillator may include a crystal resonator, an active element coupled in parallel with the crystal resonator and configured to produce at its output a waveform with an approximate 180-degree phase shift from its input, a voltage regulator a voltage regulator coupled to the active element, a sum of thresholds circuit coupled to the input of the voltage regulator, and a temperature-dependent current source coupled to the input of the voltage regulator. The voltage regulator may be configured to supply a supply voltage to the active element, the supply voltage a function of a reference voltage received at an input of the voltage regulator. The sum of thresholds circuit may be configured to generate the reference voltage such that the reference voltage is process-dependent. The temperature-dependent current source may be configured to generate a temperature-dependent current such that the reference voltage is temperature-dependent.08-16-2012
20100073099STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK - A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.03-25-2010
20120286886Electromechanical Systems Oscillator with Piezoelectric Contour Mode Resonator for Multiple Frequency Generation - Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.11-15-2012
20100164636OSCILLATION DEVICE - To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.07-01-2010
20100045392ELECTROMAGNETIC-WAVE OSCILLATOR - An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.02-25-2010
20100026399Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes - A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tuned to a selected frequency. A different circuit includes a resonant tunneling structure with plural layers, including an outer layer coupled to a further layer made of a material which has a plasma resonance tuned to a selected frequency. Two circuit sections are respectively coupled to the resonant tunneling structure at spaced locations thereon. A bias is applied across the tunneling structure and further layer, and causes the tunneling structure to exhibit a negative resistance.02-04-2010
20100007426NONLINEAR PULSE OSCILLATOR METHODS AND APPARATUS - Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.01-14-2010
20090051452Oscillation device and inspection apparatus - An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.02-26-2009
20120105161OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT - An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.05-03-2012
20100026401Terahertz oscillation device - A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.02-04-2010
20120001698OSCILLATOR - An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.01-05-2012
20100026400RESONANT TUNNELING STRUCTURE - A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E02-04-2010
20090302959SYNCHRONOUS DISTRIBUTED OSCILLATOR - A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f12-10-2009
20100117748Wave Reversing System and Method for a Rotary Traveling Wave Oscillator - Circuitry for establishing a traveling wave on a rotary traveling wave oscillator is described. The circuitry includes a gain portion that establishes a wave in a preferred direction by degenerating any wave traveling opposite to the preferred direction and regenerating any wave traveling in the preferred direction. If there are two such gain portions, each having opposite preferred directions, then a wave that is presently established in one direction can be degenerated and a new wave can be established in the opposite direction, thereby achieving reversibility of the traveling wave in real time. Each of the gain portions included in a plurality of regeneration/degeneration elements present on the rotary oscillator. Each of the regeneration/degeneration elements is connected to a pair of taps on the oscillator, the taps being separated by a direction dependent phase difference.05-13-2010
20110304404SIGNAL GENERATORS BASED ON SOLID-LIQUID PHASE SWITCHING - A phase-change oscillator and pulse generator, and related methods, are provided. The phase-change oscillator and pulse generator can include a capacitor, a switching element coupled in parallel connection with the capacitor, and a resistor coupled in series with the switching element and configured to supply a bias voltage to the switching element. The switching element can have a low-resistance state in a liquid-phase and a high-resistance state in a solid phase. In addition, the switching element can have a negative thermal coefficient of resistance. In an aspect, the switching element comprises a wire of a semiconducting material having negative thermal coefficient of resistance, such semiconducting material can be doped n-type or p-type. In an aspect, the liquid-phase is a molten state of the wire and the solid-phase is a solid state of the wire. An oscillatory signal is based at least on transitioning between the molten state and the solid state.12-15-2011
331107000 Gunn-type bulk effect device oscillators 1
20130082787Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe04-04-2013
20120092078VARIABLE RESISTOR CIRCUIT AND OSCILLATION CIRCUIT - A variable resistor circuit is arranged to adjust a resistivity value between a first terminal and a second terminal thereof according to a control signal. The variable resistor circuit includes a first resistivity adjusting circuit and a second resistivity adjusting circuit. The first resistivity adjusting circuit includes a first series resistor circuit formed of a plurality of resistor elements and a first switch portion for selectively connecting one of specific nodes of the first series resistor circuit to the first terminal according to the control signal. The second resistivity adjusting circuit includes a second series resistor circuit formed of a plurality of resistor elements connected to the second terminal and a second switch portion for selectively connecting the first series resistor circuit to one of specific nodes of the second series resistor circuit according to the control signal.04-19-2012
20100060369OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.03-11-2010
20110304403Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.12-15-2011
20120056684METHOD OF FABRICATING RESONATOR, RESONATOR, AND OSCILLATOR - There is provided a method of fabricating a resonator, the method includes, joining a vibrating plate with a substrate at a first surface thereof, grinding a surface of the vibrating plate joined with the substrate, forming an electrode on the ground surface of the vibrating plate, and etching electively a region at a second surface of the substrate, where the second surface is opposite to the first surface and the region is corresponding to a position of the electrode.03-08-2012
20110080221Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.04-07-2011
20090273404Frequency Adjustable Surface Acoustic Wave Oscillator - A frequency adjustable surface acoustic wave oscillator uses circuitry in which the phase relationship between the corresponding input and output signals and the voltage applied to or received by transducer fingers is controlled in such a manner that the frequency of the surface acoustic wave oscillator is arbitrarily controlled over a wide range by digital means. This provides an oscillator that exhibits a wide tunable frequency range while providing low phase noise.11-05-2009
20090160567Oscillator Circuit with Acoustic Single-Port Surface Wave Resonators - The invention refers to the electrical engineering/electronics field and relates to an oscillator circuit consisting of a combination of two frequency-determining elements and one active electronic circuit, wherein the frequency-determining elements are designed as single-port surface wave resonators with interdigital converters. According to the invention, the two single-port surface wave resonators are connected to each other, avoiding inductive components whereas, in the case of a combination in a parallel circuit, the connection is designed as a combination oscillating at high-frequency anti-resonance, and in the case of a combination in a series circuit, the combination is designed as a combination oscillating at high-frequency resonance. In addition, according to the invention, the ratio of the apertures of the interdigital converters to one another, the ratio of their number of prongs to one another, and the thickness of the electrode layer of the single-port surface wave resonators as well as the propagation direction for acoustic surface waves of the single-port surface wave resonators are selected so that the temperature-dependent change of the phase of the combination and the temperature-dependent change of the total phase of the rest of the elements of the oscillator circuit have signs opposite to one another and that the sum of these phase changes in the thermal operating range of the oscillator circuit is smaller than the value of the phase change of the combination and smaller than the value of the phase change of the rest of the elements of the oscillator circuit. The invention can be used with oscillators and sensors based on acoustic surface waves, in particular with components for which the temperature response of the oscillator frequency can be set.06-25-2009
20090160568CIRCUIT AND METHOD FOR A WIRELESS ACCESSORY OF A MOBLIE DEVICE - The invention relates to a circuit and method for a wireless accessory of a portable computer. The circuit comprises an oscillator circuit (06-25-2009
20090201096OSCILLATOR - This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.08-13-2009
20120206209System and Method for Reducing Temperature-and Process-Dependent Frequency Variation of a Crystal Oscillator Circuit - An oscillator may include a crystal resonator, an active element coupled in parallel with the crystal resonator and configured to produce at its output a waveform with an approximate 180-degree phase shift from its input, a voltage regulator a voltage regulator coupled to the active element, a sum of thresholds circuit coupled to the input of the voltage regulator, and a temperature-dependent current source coupled to the input of the voltage regulator. The voltage regulator may be configured to supply a supply voltage to the active element, the supply voltage a function of a reference voltage received at an input of the voltage regulator. The sum of thresholds circuit may be configured to generate the reference voltage such that the reference voltage is process-dependent. The temperature-dependent current source may be configured to generate a temperature-dependent current such that the reference voltage is temperature-dependent.08-16-2012
20100073099STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK - A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.03-25-2010
20120286886Electromechanical Systems Oscillator with Piezoelectric Contour Mode Resonator for Multiple Frequency Generation - Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.11-15-2012
20100164636OSCILLATION DEVICE - To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.07-01-2010
20100045392ELECTROMAGNETIC-WAVE OSCILLATOR - An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.02-25-2010
20100026399Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes - A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tuned to a selected frequency. A different circuit includes a resonant tunneling structure with plural layers, including an outer layer coupled to a further layer made of a material which has a plasma resonance tuned to a selected frequency. Two circuit sections are respectively coupled to the resonant tunneling structure at spaced locations thereon. A bias is applied across the tunneling structure and further layer, and causes the tunneling structure to exhibit a negative resistance.02-04-2010
20100007426NONLINEAR PULSE OSCILLATOR METHODS AND APPARATUS - Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.01-14-2010
20090051452Oscillation device and inspection apparatus - An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.02-26-2009
20120105161OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT - An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.05-03-2012
20100026401Terahertz oscillation device - A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.02-04-2010
20120001698OSCILLATOR - An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.01-05-2012
20100026400RESONANT TUNNELING STRUCTURE - A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E02-04-2010
20090302959SYNCHRONOUS DISTRIBUTED OSCILLATOR - A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f12-10-2009
20100117748Wave Reversing System and Method for a Rotary Traveling Wave Oscillator - Circuitry for establishing a traveling wave on a rotary traveling wave oscillator is described. The circuitry includes a gain portion that establishes a wave in a preferred direction by degenerating any wave traveling opposite to the preferred direction and regenerating any wave traveling in the preferred direction. If there are two such gain portions, each having opposite preferred directions, then a wave that is presently established in one direction can be degenerated and a new wave can be established in the opposite direction, thereby achieving reversibility of the traveling wave in real time. Each of the gain portions included in a plurality of regeneration/degeneration elements present on the rotary oscillator. Each of the regeneration/degeneration elements is connected to a pair of taps on the oscillator, the taps being separated by a direction dependent phase difference.05-13-2010
20110304404SIGNAL GENERATORS BASED ON SOLID-LIQUID PHASE SWITCHING - A phase-change oscillator and pulse generator, and related methods, are provided. The phase-change oscillator and pulse generator can include a capacitor, a switching element coupled in parallel connection with the capacitor, and a resistor coupled in series with the switching element and configured to supply a bias voltage to the switching element. The switching element can have a low-resistance state in a liquid-phase and a high-resistance state in a solid phase. In addition, the switching element can have a negative thermal coefficient of resistance. In an aspect, the switching element comprises a wire of a semiconducting material having negative thermal coefficient of resistance, such semiconducting material can be doped n-type or p-type. In an aspect, the liquid-phase is a molten state of the wire and the solid-phase is a solid state of the wire. An oscillatory signal is based at least on transitioning between the molten state and the solid state.12-15-2011
Entries
DocumentTitleDate
20130082787Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe04-04-2013
20120092078VARIABLE RESISTOR CIRCUIT AND OSCILLATION CIRCUIT - A variable resistor circuit is arranged to adjust a resistivity value between a first terminal and a second terminal thereof according to a control signal. The variable resistor circuit includes a first resistivity adjusting circuit and a second resistivity adjusting circuit. The first resistivity adjusting circuit includes a first series resistor circuit formed of a plurality of resistor elements and a first switch portion for selectively connecting one of specific nodes of the first series resistor circuit to the first terminal according to the control signal. The second resistivity adjusting circuit includes a second series resistor circuit formed of a plurality of resistor elements connected to the second terminal and a second switch portion for selectively connecting the first series resistor circuit to one of specific nodes of the second series resistor circuit according to the control signal.04-19-2012
20100060369OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.03-11-2010
20110304403Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.12-15-2011
20120056684METHOD OF FABRICATING RESONATOR, RESONATOR, AND OSCILLATOR - There is provided a method of fabricating a resonator, the method includes, joining a vibrating plate with a substrate at a first surface thereof, grinding a surface of the vibrating plate joined with the substrate, forming an electrode on the ground surface of the vibrating plate, and etching electively a region at a second surface of the substrate, where the second surface is opposite to the first surface and the region is corresponding to a position of the electrode.03-08-2012
20110080221Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.04-07-2011
20090273404Frequency Adjustable Surface Acoustic Wave Oscillator - A frequency adjustable surface acoustic wave oscillator uses circuitry in which the phase relationship between the corresponding input and output signals and the voltage applied to or received by transducer fingers is controlled in such a manner that the frequency of the surface acoustic wave oscillator is arbitrarily controlled over a wide range by digital means. This provides an oscillator that exhibits a wide tunable frequency range while providing low phase noise.11-05-2009
20090160567Oscillator Circuit with Acoustic Single-Port Surface Wave Resonators - The invention refers to the electrical engineering/electronics field and relates to an oscillator circuit consisting of a combination of two frequency-determining elements and one active electronic circuit, wherein the frequency-determining elements are designed as single-port surface wave resonators with interdigital converters. According to the invention, the two single-port surface wave resonators are connected to each other, avoiding inductive components whereas, in the case of a combination in a parallel circuit, the connection is designed as a combination oscillating at high-frequency anti-resonance, and in the case of a combination in a series circuit, the combination is designed as a combination oscillating at high-frequency resonance. In addition, according to the invention, the ratio of the apertures of the interdigital converters to one another, the ratio of their number of prongs to one another, and the thickness of the electrode layer of the single-port surface wave resonators as well as the propagation direction for acoustic surface waves of the single-port surface wave resonators are selected so that the temperature-dependent change of the phase of the combination and the temperature-dependent change of the total phase of the rest of the elements of the oscillator circuit have signs opposite to one another and that the sum of these phase changes in the thermal operating range of the oscillator circuit is smaller than the value of the phase change of the combination and smaller than the value of the phase change of the rest of the elements of the oscillator circuit. The invention can be used with oscillators and sensors based on acoustic surface waves, in particular with components for which the temperature response of the oscillator frequency can be set.06-25-2009
20090160568CIRCUIT AND METHOD FOR A WIRELESS ACCESSORY OF A MOBLIE DEVICE - The invention relates to a circuit and method for a wireless accessory of a portable computer. The circuit comprises an oscillator circuit (06-25-2009
20090201096OSCILLATOR - This invention relates to an oscillator having reduced sensitivity to acceleration. The oscillator includes a plurality of asymmetrically mounted resonator portions each having an active resonance region. The asymmetric mounting of the resonator portions means that each resonator portion has an axis passing through its active resonance region along which the acceleration sensitivity vector is dominant, i.e. the sensitivity to acceleration along the direction defined by one axis is much greater than the sensitivity to acceleration in other directions. The resonators are mounted in an oscillator such that their dominant axes are directed in different directions, e.g. an anti-parallel arrangement, which means that the dominant acceleration sensitivity vectors can cancel each other out.08-13-2009
20120206209System and Method for Reducing Temperature-and Process-Dependent Frequency Variation of a Crystal Oscillator Circuit - An oscillator may include a crystal resonator, an active element coupled in parallel with the crystal resonator and configured to produce at its output a waveform with an approximate 180-degree phase shift from its input, a voltage regulator a voltage regulator coupled to the active element, a sum of thresholds circuit coupled to the input of the voltage regulator, and a temperature-dependent current source coupled to the input of the voltage regulator. The voltage regulator may be configured to supply a supply voltage to the active element, the supply voltage a function of a reference voltage received at an input of the voltage regulator. The sum of thresholds circuit may be configured to generate the reference voltage such that the reference voltage is process-dependent. The temperature-dependent current source may be configured to generate a temperature-dependent current such that the reference voltage is temperature-dependent.08-16-2012
20100073099STABILIZATION NETWORK AND A SEMICONDUCTOR DEVICE HAVING THE STABILIZATION NETWORK - A stabilization network and a semiconductor device having the stabilization network wherein the stabilization network includes an active element having a negative resistance accompanying a high frequency negative resistance oscillation; and a tank circuit composed of a resistance connected to a main electrode of the active element, an inductance and capacitance which are connected in parallel with the resistance and synchronize with an oscillating frequency of the high frequency negative resistance oscillation, wherein the stabilization network is performed for suppressing a negative resistance accompanying a Gunn oscillation and obtaining stable and highly efficient power amplification.03-25-2010
20120286886Electromechanical Systems Oscillator with Piezoelectric Contour Mode Resonator for Multiple Frequency Generation - Electromechanical systems resonator structures, devices, circuits, and systems are disclosed. In one aspect, an oscillator includes an active component and a passive component connected in a feedback configuration. The passive component includes one or more contour mode resonators (CMR). A CMR includes a piezoelectric layer disposed between a first conductive layer and a second conductive layer. The conductive layers include an input electrode and an output electrode. The passive component is configured to output a first resonant frequency and a second resonant frequency, which is an odd integer harmonic of the first resonant frequency. The active component is configured to output a signal including the first resonant frequency and the second resonant frequency. This output signal can be a substantially square wave signal, which can serve as a clock in various applications.11-15-2012
20100164636OSCILLATION DEVICE - To provide an oscillation device having a long oscillation wavelength in which wavelength variable width is relatively broad and wavelength sweep rate is relatively high. An oscillation device includes a gain medium having a gain with respect to an electromagnetic wave to be oscillated, cavity structures for resonating the electromagnetic wave, and energy injection means and for injecting pumping energy into the gain medium. The gain medium is sandwiched between a first negative permittivity medium and a second magnetic permittivity medium each of which real part of permittivity with respect to the electromagnetic wave is negative. Electric field application means is provided for at least one of the first negative permittivity medium and the second negative permittivity medium to apply an electric field for changing a depletion region formed at a boundary part with the gain medium.07-01-2010
20100045392ELECTROMAGNETIC-WAVE OSCILLATOR - An electromagnetic-wave oscillator includes a substrate, an EMW oscillating unit including a gain portion, an EMW resonance portion, an EMW radiating portion, and a ground (GND) portion, and a supplying unit for supplying electric power to the EMW oscillating unit. The ground portion regulates a predetermined reference electric potential for the gain portion, the EMW resonance portion, and the EMW radiating portion. The EMW oscillating unit is disposed on a first surface of the substrate. The supplying unit is disposed on a second surface of the substrate extending on an opposite side to the first surface. The EMW oscillating unit and the supplying unit are electrically connected via a penetrating electrode formed in the substrate.02-25-2010
20100026399Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes - A circuit includes a resonant tunneling device having first and second terminals, and biased to exhibit a negative resistance between the terminals, the terminals being coupled at spaced locations to a further section made of a material which has a plasma resonance tuned to a selected frequency. A different circuit includes a resonant tunneling structure with plural layers, including an outer layer coupled to a further layer made of a material which has a plasma resonance tuned to a selected frequency. Two circuit sections are respectively coupled to the resonant tunneling structure at spaced locations thereon. A bias is applied across the tunneling structure and further layer, and causes the tunneling structure to exhibit a negative resistance.02-04-2010
20100007426NONLINEAR PULSE OSCILLATOR METHODS AND APPARATUS - Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.01-14-2010
20090051452Oscillation device and inspection apparatus - An oscillation device has a resonant tunneling diode formed by interposing a gain medium including a first barrier layer, a quantum well layer and a second barrier layer between a first thickness adjusting layer and a second thickness adjusting layer. The oscillation device also has a switch for switching the polarity of a bias voltage being applied to the resonant tunneling diode. The first thickness adjusting layer and the second thickness adjusting layer have different thicknesses. Thus, a single oscillation device is driven to oscillate with different oscillation frequencies.02-26-2009
20120105161OSCILLATOR HAVING NEGATIVE RESISTANCE ELEMENT - An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.05-03-2012
20100026401Terahertz oscillation device - A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.02-04-2010
20120001698OSCILLATOR - An oscillator includes a resonator section structured such that a dielectric is interposed between first and second conductors and such that the first and second conductors are electrically connected to a resonant tunneling diode, a capacitor section structured such that the dielectric is interposed between the first and second conductors, a line section configured to electrically connect the resonator section and the capacitor section in parallel to each other, and a resistor section configured to electrically connect the first and second conductors to each other. A first position of the resonator section and a second position of the capacitor section are connected to each other by the line section so that the first position and the second position are substantially electrically equivalent to each other in a wavelength range larger than a wavelength of an electromagnetic wave that resonates in the resonator section.01-05-2012
20100026400RESONANT TUNNELING STRUCTURE - A resonant tunneling structure for generating oscillation with multiple fundamental oscillation frequencies is provided. A first quantum well layer has a second sub-band (E02-04-2010
20090302959SYNCHRONOUS DISTRIBUTED OSCILLATOR - A distributed oscillator includes an odd number of serially connected amplifying elements. An output of a last amplifying element is looped back to an input of a first amplifying element via a first transmission line. The oscillator oscillates at a first frequency f12-10-2009
20100117748Wave Reversing System and Method for a Rotary Traveling Wave Oscillator - Circuitry for establishing a traveling wave on a rotary traveling wave oscillator is described. The circuitry includes a gain portion that establishes a wave in a preferred direction by degenerating any wave traveling opposite to the preferred direction and regenerating any wave traveling in the preferred direction. If there are two such gain portions, each having opposite preferred directions, then a wave that is presently established in one direction can be degenerated and a new wave can be established in the opposite direction, thereby achieving reversibility of the traveling wave in real time. Each of the gain portions included in a plurality of regeneration/degeneration elements present on the rotary oscillator. Each of the regeneration/degeneration elements is connected to a pair of taps on the oscillator, the taps being separated by a direction dependent phase difference.05-13-2010
20110304404SIGNAL GENERATORS BASED ON SOLID-LIQUID PHASE SWITCHING - A phase-change oscillator and pulse generator, and related methods, are provided. The phase-change oscillator and pulse generator can include a capacitor, a switching element coupled in parallel connection with the capacitor, and a resistor coupled in series with the switching element and configured to supply a bias voltage to the switching element. The switching element can have a low-resistance state in a liquid-phase and a high-resistance state in a solid phase. In addition, the switching element can have a negative thermal coefficient of resistance. In an aspect, the switching element comprises a wire of a semiconducting material having negative thermal coefficient of resistance, such semiconducting material can be doped n-type or p-type. In an aspect, the liquid-phase is a molten state of the wire and the solid-phase is a solid state of the wire. An oscillatory signal is based at least on transitioning between the molten state and the solid state.12-15-2011

Patent applications in class SOLID STATE ACTIVE ELEMENT OSCILLATOR

Patent applications in all subclasses SOLID STATE ACTIVE ELEMENT OSCILLATOR