Class / Patent application number | Description | Number of patent applications / Date published |
330298000 | Including protection means | 30 |
20080211585 | Adaptive Protection Circuit For a Power Amplifier - A radio frequency device comprises a radio frequency (RF) power amplifier (PA) operably coupled to a protection circuit for minimising voltage standing wave ratio effects, wherein the protection circuit comprises a current limiter indexed to a power supplied to the RF PA. | 09-04-2008 |
20080218271 | RF POWER AMPLIFIER PROTECTION - A circuit and method for protecting a radio frequency power amplifier against peak drain voltage. A detector circuit has an input connected to a drain of a power transistor of an amplification stage of the power amplifier to detect a peak drain voltage therefrom. The detector circuit outputs a protection signal when the detected peak drain voltage exceeds a predetermined reference level. A shutdown circuit is coupled to the detector circuit and inputs the protection signal therefrom. The protection signal is used to remove a gate bias of at least one amplification stage of the power amplifier. High frequency components are used in the detector and protection circuits to immediately reduce the drain voltage from one or more of the amplification stages. | 09-11-2008 |
20080238554 | Serial Link Output Stage Differential Amplifier and Method - Protection for the transmission of higher amplitude outputs required of differential amplifiers formed by thin oxide transistors with limited maximum voltage tolerance used where compliance with communication protocol standards requires handling voltages which may, in transition, exceed desirable levels is provided by limiting the voltage across any two device terminals under power down conditions. | 10-02-2008 |
20080290951 | SEMICONDUCTOR DEVICE - A current limiting circuit is connected to the gate (input terminal) of an amplifying transistor. The current limiting circuit includes a protecting transistor, a first protecting resistor connecting the drain to the gate of the protecting transistor, and a second protecting resistor connecting the source to the gate of the protecting transistor. The current limiting circuit limits current, so that electric power larger than the maximum electric power allowable for the amplifying transistor does not pass. | 11-27-2008 |
20080297260 | RADIO-FREQUENCY POWER AMPLIFIER - A radio-frequency power amplifier for preventing a final-stage HBT from being destroyed is provided. To this end, a radio-frequency multistage power amplifier of the present invention includes: a first amplification stage having a first hetero bipolar transistor of which collector output is detected; a second amplification stage which is prior to the first amplification stage and which has a second hetero bipolar transistor in which the detection result is reflected; a first resistor provided between a collector of the second hetero bipolar transistor and a power supply; and a protection circuit which is connected between a collector of the first hetero bipolar transistor and the collector of the second hetero bipolar transistor, detects output from the collector of the first hetero bipolar transistor, and reduces a voltage of the collector of the second hetero bipolar transistor in accordance with the detected output. | 12-04-2008 |
20080315956 | Saturation Handling - Saturation handling for preventing a power amplifier from going into a saturation condition is disclosed. | 12-25-2008 |
20090039963 | CIRCUIT FOR INHIBITING OVER-CURRENT IN POWER AMPLIFIER - A power amplifier drives a load connected to a first output terminal and a second output terminal. When generation of over-current is detected by the current detection section, the output amplifier control section is controlled to stop the operation of the output amplifier section, and when a voltage greater than or equal to said set value is detected by said voltage detection section, the stopped operation of said output amplifier section is maintained even though generation of the over-current is not detected at the current detection section. When the terminal voltage detection section detects a terminal voltage greater than or equal to a predetermined voltage, over-current at the current detection section is suppressed. | 02-12-2009 |
20090153251 | VOLTAGE DETECTION TYPE OVERCURRENT PROTECTION DEVICE FOR CLASS-D AMPLIFIER - The present invention discloses a voltage detection type overcurrent protection device, which applies to the output stage of a CMOS Class-D audio amplifier. Generally, a Class-D audio amplifier is used to drive a high-load loudspeaker; therefore, it needs a high-current driver. When there is a short circuit in the load, the high current will burn out the driver stage. The present invention detects the output voltage to indirectly monitor whether the output current is too large. Once an overcurrent is detected, the output-stage transistor is turned off to stop high current lest the circuit be burned out. | 06-18-2009 |
20090174485 | OVER-CURRENT SENSING DURING NARROW GATE DRIVE OPERATION OF CLASS D OUTPUT STAGES - Two transistors of a class D output stage are driven by complementary, variable duty cycle signals PWM+ and PWM−. When the pulse width of the PWM+ signal becomes too narrow for reliable operation of prior art over-current protection circuits sensing the drain to source voltage of FET | 07-09-2009 |
20090261908 | POWER SUPPLY PROVIDING ULTRAFAST MODULATION OF OUTPUT VOLTAGE - A power supply for providing a modulated output voltage to a load is disclosed. According to various embodiments, the power supply comprises a plurality of parallel-connected switch-mode power modules and a controller. The controller is connected to each of the power modules and is for controlling the duty cycles of the respective power modules such that the power modules have a common duty cycle in steady state, but in a phase-shifted or “interleaved” manner. In addition, the controller is for controlling the output voltage of the power converter by controlling the ratio of power modules in the forward state at a time to the total number of power modules. In this way, by providing a sufficiently large number of power modules, arbitrarily low output voltage amplitudes and intra-level oscillations can be achieved. Further, the rate of modulation of the output voltage can exceed the switching frequency (f=1/T, where T is the switching period) of the power modules. An rf power amplifier system including such a power supply is also disclosed. | 10-22-2009 |
20090278610 | POWER AMPLIFIER OUTPUT VOLTAGE REDUCTION METHOD - An apparatus and method are provided for reducing the output voltage in a power amplifier. The power amplifier contains a power supply, an amplifier stage, an impedance matching circuit, and a voltage reduction unit connected between the power supply and the amplifier stage. A power amplifier device within the amplifier stage has a gain bandwidth that covers multiple frequency bands. The output voltage of the power amplifier device is a composite voltage that contains fundamental and harmonic components that lie within the gain bandwidth. The voltage reduction unit reduces the supply voltage of the power amplifier device such that the composite output voltage is less than the breakdown voltage in the power amplifier device. The impedance matching circuit is coupled to the power amplifier device output and provides impedance matching for output signals of the fundamental and harmonic frequencies. | 11-12-2009 |
20100026392 | METHOD AND APPARATUS FOR OUTPUT AMPLIFIER PROTECTION - An amplifier circuit includes a first circuit and a second circuit connected in series. The first circuit has a first terminal coupled to a first power supply terminal, a second terminal coupled to an output node, and a control terminal for receiving a first signal for controlling a current flow. The second circuit has a first terminal coupled to the output node, a second terminal couple to a second power supply terminal, and a control terminal for receiving a second signal controlling a current flow in the first circuit. A bias circuit is coupled to the third terminal of the first circuit and is configured to limit a current flow in the first circuit when a voltage at the output node is outside a predetermined voltage range. In an embodiment, the bias circuit includes a plurality of diode devices connected in series and a switch device coupled to the diode devices. | 02-04-2010 |
20100127782 | Common Centroid Electrostatic Discharge Protection for Integrated Circuit Devices - A method of protecting a circuit design implemented within an integrated circuit (IC) from electrostatic discharge (ESD) can include positioning a device array pair comprising first and second device arrays on the IC to share a common centroid, wherein the first and second device arrays are matched. An ESD diode array pair comprising first and second ESD diode arrays can be positioned on the IC adjacent to a first perimeter encompassing the first and second device arrays, wherein the first and second ESD diode arrays share the common centroid and are matched. A cathode terminal of each ESD diode of the first ESD diode array can be coupled to an input of the first device array, and a cathode terminal of each ESD diode of the second ESD diode array can be coupled to an input of the second device array. | 05-27-2010 |
20100156541 | SEMICONDUCTOR DEVICE - A current limiting circuit is connected to the gate (input terminal) of an amplifying transistor. The current limiting circuit includes a protecting transistor, a first protecting resistor connecting the drain to the gate of the protecting transistor, and a second protecting resistor connecting the source to the gate of the protecting transistor. The current limiting circuit limits current, so that electric power larger than the maximum electric power allowable for the amplifying transistor does not pass. | 06-24-2010 |
20110115564 | Short Circuits and Power Limit Protection Circuits - In one embodiment, a method includes: detecting one of a short-to-ground condition and a short-to-supply condition at an output node; selectively activating a feedback control transistor according to the detecting; detecting a first current passing through a first transistor using a second transistor sized to be smaller than the first transistor; mirroring the detected current using a plurality of transistors to form a feedback current; and providing the feedback current to a gate electrode of the first transistor according to the selectively activating the feedback control transistor. | 05-19-2011 |
20110291765 | OVERDRIVE PROTECTION CIRCUIT - Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed. | 12-01-2011 |
20120062324 | RF POWER AMPLIFIER - An RF power amplifier includes an RF choke coil, a power amplification circuit unit, and an electrostatic discharge (ESD) protection unit. The RF choke coil is connected to a voltage terminal through which an operating voltage is applied. The RF choke coil supplies the operating voltage and interrupts an RF signal. The power amplification circuit unit is supplied with the operating voltage through the RF choke coil. The power amplification circuit unit amplifies an input signal inputted through an input terminal and outputs the amplified input signal through an output terminal. The ESD protection unit is connected between a first connection node and a ground. The ESD protection unit bypasses an ESD voltage from the first connection node to the ground, the first connection node being a node between the voltage terminal and the RF choke coil. | 03-15-2012 |
20130154748 | Apparatus and Method for Thermal Interfacing - An apparatus ( | 06-20-2013 |
20130257543 | POWER AMPLIFIER PROTECTION CIRCUIT, COMMUNICATION DEVICE, AND METHOD - Embodiments of the present application disclose a power amplifier protection circuit, communication device, and method, to protect a power amplifier when an abnormal signal, such as a bun or a pulse, occurs in a circuit. The method according to an embodiment of the present application comprises: detecting and comparing, by an input detection circuit, an abnormal signal in an input signal, outputting a protection control signal, and after processing performed by a delay circuit, controlling a power amplifier to be in an off state in a pulse width of the delayed protection control signal, so that the abnormal signal passes through the power amplifier when the power amplifier is in the off state, thereby preventing the power amplifier from burning, and achieving the effect of protecting the power amplifier. | 10-03-2013 |
20140132355 | Providing An Integrated Directional Coupler In A Power Amplifier - A power amplifier includes a power amplifier core including a plurality of gain stages to receive a radio frequency (RF) signal and to output an amplified RF signal, an output network coupled to the power amplifier core to receive the amplified RF signal and output a transmit output power signal, and a directional coupler coupled to the output network to obtain a coupled signal proportional to the transmit output power signal. Each of these components can be configured on a single semiconductor die, in an embodiment. | 05-15-2014 |
20140167862 | ELECTROSTATIC DISCHARGE PROTECTION OF AMPLIFIER CASCODE DEVICES - Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad. | 06-19-2014 |
20140232471 | RADIO FREQUENCY AMPLIFYING APPARATUS HAVING PROTECTION VOLTAGE VARYING FUNCTION - There is provided a radio frequency amplifying apparatus having a protection voltage varying function, including a radio frequency amplifying unit amplifying a radio frequency signal, and a protection circuit unit connected between an output node of the radio frequency amplifying unit and a ground and limiting a voltage in the output node to a level of a preset protection voltage or less when the voltage in the output node is higher than the preset protection voltage, wherein the protection voltage is varied with a control signal. | 08-21-2014 |
20140232472 | Method and Device for Protecting a High-Frequency Power Amplifier Against a Termination fault - A mismatch protection circuit for high frequency power amplifiers includes a waveguide coupler connected to the output of the high frequency power amplifier. The waveguide coupler includes a first detector diode, which supplies, according to the power level being applied, a first voltage, which corresponds to the effective power that is fed in. The waveguide coupler also includes a second detector diode, the outputted second voltage of which corresponds to the power that is reflected due to the mismatch. The protection circuit further includes a control circuit, with which the amount of a mismatch is determined from the difference between the voltage value at the second diode and a reference voltage. The output stage(s) of the high frequency power amplifier(s) is and/or are switched on or off, depending on whether the voltage difference drops below or exceeds a given reference value. | 08-21-2014 |
20140292415 | SEMICONDUCTOR DEVICE HEAT DISSIPATION USING HIGH THERMAL CONDUCTIVITY DIELECTRIC LAYER - Semiconductor devices are disclosed including a bulk substrate, an epitaxial collector layer, an epitaxial base layer, an epitaxial emitter layer and an electrical insulator layer in direct thermal contact with at least a portion of the base layer, emitter layer, and/or collector layer. At least a portion of the electrical insulator layer has high thermal conductivity properties, which can provide for dissipation of undesirable thermal energy through the electrical insulator layer. | 10-02-2014 |
20140368280 | Protection Module for RF-Amplifier - A protection module ( | 12-18-2014 |
20150084702 | ELECTROSTATIC DISCHARGE (ESD) CIRCUITRY - Embodiments of the present disclosure describe electrostatic discharge (ESD) circuitry and associated techniques and configurations. In one embodiment, ESD circuitry includes a first node coupled with a supply voltage node and a ground node, a first transistor coupled with the first node and the supply voltage node, a second transistor coupled with the first node and the ground node, a second node coupled with the first transistor and the second transistor, a third transistor coupled with the second node and a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node. Other embodiments may be described and/or claimed. | 03-26-2015 |
20150311872 | APPARATUS AND METHODS FOR AMPLIFIER INPUT PROTECTION - Apparatus and methods for amplifier input protection are provided. In certain implementations, an amplifier input protection circuit includes a first JFET electrically connected between a first input and a first output, and a second JFET electrically connected between a second input and a second output. Additionally, a first clamp is electrically connected to the first output, and a second clamp is electrically connected to the second output. A first current mirror mirrors a current through the first clamp, and provides the mirrored current to a third JFET electrically connected between the first JFET's source and gate. Additionally, a second current mirror that mirrors a current through the second clamp, and provides the mirrored current to a fourth JFET that is electrically connected between a source and gate of the second JFET. Configuring the protection circuit in this manner can provide the benefits of both low noise and low fault current. | 10-29-2015 |
20150341001 | SEMICONDUCTOR DEVICE INCLUDING AMPLIFIER - Disclosed here is an apparatus that comprises an amplifier having first and second input nodes, first and second resistors, a first electrostatic discharge protection circuit coupled between the first input node and the first resistor, and a second electrostatic discharge protection circuit coupled between the second input node and the second resistor. | 11-26-2015 |
20160191000 | PROTECTION DEVICE - In a protection device of a current amplifier circuit, to protect the current amplifier circuit against more high-speed operation than recovery time of a relay device and to protect operation of the current amplifier circuit in a wide range from low frequency side to high frequency side. | 06-30-2016 |
20220140792 | AMPLIFIER HAVING ELECTROSTATIC DISCHARGE AND SURGE PROTECTION CIRCUIT - Amplifier having electrostatic discharge and surge protection circuit. In some embodiments, a radio-frequency integrated circuit can include an amplifier, a controller configured to control operation of the amplifier, and a clamp circuit configured to provide electrostatic discharge protection and surge protection for either or both of the amplifier and the controller. The clamp circuit can include a feedback combination clamp implemented to direct a current associated with either or both of an electrostatic discharge and a surge at a first node to a second node. | 05-05-2022 |