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Including plural amplifier channels

Subclass of:

330 - Amplifiers

330250000 - WITH SEMICONDUCTOR AMPLIFYING DEVICE (E.G., TRANSISTOR)

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DocumentTitleDate
20110175680WIRELESS COMMUNICATION DEVICE AND SEMICONDUCTOR PACKAGE DEVICE HAVING A POWER AMPLIFIER THEREFOR - A semiconductor package device comprises a first amplifier block, at least one further amplifier block operably coupled in parallel with the first amplifier block between a common input and a common output, and at least one stabilisation network operably coupled between a node of the first amplifier block and a corresponding node of the at least one further amplifier block. The at least one stabilisation network comprises an inductance operably coupled between the corresponding nodes of the first and at least one further amplifier blocks, and a capacitance operably coupling a mid-point of the inductance to a ground plane.07-21-2011
20110175679Network for controlling the power supply to a system of active elements - The present invention relates to a power supply control network of an amplifying active elements system enabling at least one control signal to be transmitted to N different control systems of the power supply voltage of P different composed active amplifying elements. It comprises a set of distributor elements of power supply control signals connected in cascade.07-21-2011
20130027137RADIATION HARDENED DIFFERENTIAL AMPLIFIER - This disclosure is directed to techniques for preventing or reducing perturbations of an output signal of a differential amplifier caused by ionizing radiation incident upon the amplifier. The amplifier may include an amplification module that includes a plurality of amplification units configured to amplify a difference between a first component and a second component of a differential voltage signal to generate a plurality of amplified difference signals each corresponding to the amplified difference. The amplifier may further include a combination module that combines the plurality of amplified difference signals to generate a common output signal corresponding to the amplified difference.01-31-2013
20100156540AMPLIFIER ARCHITECTURE FOR POLAR MODULATION - The present invention relates to an electronic device for power efficient linear amplification. The electronic device includes an amplifier (RF-PA) for amplifying a phase modulated signal (PM). The amplifier (RF-PA) is adapted to be controlled by a first modulating signal (AM high) for modulating the amplitude of the phase modulated signal (PM) above a predetermined amplitude value. The electronic device is further adapted to attenuate an output signal of the amplifier (RF-PA) for providing amplitude modulation below the predetermined amplitude value.06-24-2010
20100148877INTEGRATED POWER AMPLIFIERS FOR USE IN WIRELESS COMMUNICATION DEVICES - An integrated power amplifier can include a carrier amplifier, where the carrier amplifier is connected to a first quarter wave transformer at the input of the carrier amplifier. In addition, the power amplifier can further include at least one peaking amplifier connected in parallel with the carrier amplifier; a first differential combining structure, where the first combining structure includes a first plurality of quarter wave transformers that are configured to combine respective first differential outputs of the carrier amplifier in phase to generate a first single-ended output signal, and a second differential combining structure, where the second combining structures includes a second plurality of quarter wave transformers that are configured to combine respective second differential outputs of the at least one peaking amplifier in phase to generate a second single-ended output signal, where the first single-ended output signal and the second single-ended output signal are combinable in-phase to provide an overall output.06-17-2010
20090212871MULTI-PLANAR SOLID STATE AMPLIFIER - A solid state power amplifier (SSPA) system may include a radio frequency (RF) input, an RF waveguide split block, multiple monolithic microwave integrated circuit (MMIC) power amplifier modules, and/or a heat spreader. The power amplifier modules and RF waveguide may be distributed about the heat spreader in different planes. Furthermore, the power amplifier modules may be located on opposite sides of the heat spreader and nonplanar to the waveguide split block. A method for dissipating heat within an SSPA may include receiving an RF signal in a first plane, amplifying the RF signal in another plane, and combining the RF signal in yet another plane.08-27-2009
20130082783Semiconductor Device - Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.04-04-2013
20130076446RF DEVICE WITH COMPENSATORY RESONATOR MATCHING TOPOLOGY - An amplifier circuit includes an RF transistor, a parallel resonator and a series resonator. The RF transistor has an input, an output and an intrinsic output capacitance. The parallel resonator is connected to the output of the RF transistor and includes a first inductive component connected in parallel with the intrinsic output capacitance of the RF transistor. The series resonator connects the output of the RF transistor to an output terminal and includes a second inductive component connected in series with a capacitive component. The series resonator is operable to compensate for a change in impedance of the parallel resonator over frequency.03-28-2013
20100045385INTEGRATED CIRCUIT WITH PARALLEL SETS OF TRANSISTOR AMPLIFIERS HAVING DIFFERENT TURN ON POWER LEVELS - A power amplifier circuit includes a power splitter that splits an input signal into a plurality of component input signals. At least two sets of transistor amplifiers are each coupled in parallel to the power splitter to receive and amplify different ones of the component input signals to generate amplified component output signals. The two transistor amplifiers of each set of transistor amplifiers are configured to turn on at different power levels of the input signal relative to each other. A combiner is configured to receive and combine the amplified component output signals from the at least two sets of transistor amplifiers into an output signal. An integrated circuit package encloses the power splitter, the at least two sets of transistor amplifiers, and the combiner.02-25-2010
20130135052INTERFERENCE REDUCTION BETWEEN RF COMMUNICATIONS BANDS - Radio frequency (RF) power amplifier (PA) circuitry and a PA envelope power supply are disclosed. The RF PA circuitry receives and amplifies an RF input signal to provide an RF output signal using an envelope power supply signal, which is provided by the PA envelope power supply. The RF PA circuitry operates in either a normal RF spectral emissions mode or a reduced RF spectral emissions mode. When reduced RF spectral emissions are required, the RF PA circuitry operates in the reduced RF spectral emissions mode. As such, at a given RF output power, during the reduced RF spectral emissions mode, RF spectral emissions of the RF output signal are less than during the normal RF spectral emissions mode. As a result, the reduced RF spectral emissions mode may be used to reduce interference between RF communications bands.05-30-2013
20090115530Doherty-Amplifier System - A Doherty-amplifier system has several amplifier stages, of which the inputs are controlled via a control unit with different phase angles and/or signal amplitudes of an input signal. According to the invention, every output of every amplifier stage is connected directly to an antenna element, without the output signals from the amplifier stages being combined with one another before being supplied to the antenna elements.05-07-2009
20090045877POWER AMPLIFIER CIRCUIT FOR MULTI-FREQUENCIES AND MULTI-MODES AND METHOD FOR OPERATING THE SAME - A multi-frequency and multi-mode power amplifier is provided. The amplifier has a carrier power amplifier and a peaking power amplifier. The carrier power amplifier receives a first signal and outputs a first amplified signal, in which a first transistor size adjusting unit is included to adjust an equivalent transistor size based on a mode indication signal. The peaking power amplifier receives a second signal and outputs a second amplified signal, in which a second transistor size adjusting unit is included to adjust an equivalent transistor size based on the mode indication signal.02-19-2009
20090096530SOLID STATE RF POWER AMPLIFIER - A power amplifier (power amplifier) having multiple solid state sub-amplifiers connected in parallel between the power amplifier input and the power amplifier output are described. The signal input to the power amplifier is provided to an RF splitter connected between the power amplifier input connector and the input of each of the sub-amplifiers. The RF splitter splits the input power from the signal input and provides the power to the sub-amplifier inputs through input electrical paths. The input electrical paths from the power amplifier input to the sub-amplifiers are substantially physically identical. Each of the sub-amplifiers drive an input of an RF combiner connected between the outputs of the sub-amplifiers and the output of the power amplifier. The RF combiner combines the output power from each of the sub-amplifiers through output electrical paths, and provides the combined power to the power amplifier output. The output electrical paths from the sub-amplifiers to the power amplifier output are substantially physically identical.04-16-2009
20120218044Three-Stage GaN HEMT Doherty Power Amplifier for High Frequency Applications - A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.08-30-2012
20110012681LOW DISTORTION AMPLIFIER AND DOHERTY AMPLIFIER USING LOW DISTORTION AMPLIFIER - Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.01-20-2011
20130063215DUAL BAND AMPLIFIER - A dual band amplifier is provided comprising a first matching circuit disposed in a first radiofrequency path between an input port and a first amplifier and a second matching circuit disposed in a second radiofrequency path between the input port and a second amplifier. The first matching circuit transforms a first input impedance of the first amplifier to a predetermined input port impedance when the radiofrequency signal is in a first frequency range and transmits the first input impedance to the input port when the radiofrequency signal is in the second frequency range. The second matching circuit transforms the second input impedance to the input port impedance when the input signal is in the second frequency range and transmits the second input impedance to the input port when the radiofrequency signal is in the first frequency range.03-14-2013
20090243728Splitter circuit - A splitter circuit improves isolation between output ports. The splitter circuit comprises input port 10-01-2009
20090237166HIGH FREQUENCY POWER AMPLIFIER - A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.09-24-2009
20130214867POWER AMPLIFIER DEVICE - A power amplifier device includes an input terminal for a RF input signal. The power amplifier device includes an output terminal a RF output signal. The power amplifier device includes a first power amplifier connected to the input terminal, amplifies the RF input signal with a first gain, and outputs a first amplified signal. The power amplifier device includes a second power amplifier that amplifies a signal on the basis of the first amplified signal and outputs a second amplified signal with a second gain. The power amplifier device includes a low-pass filter or a band-pass filter that filters the second amplified signal. The power amplifier device includes an amplitude comparator to compare the first amplitude of the first comparison signal generated from the RF input signal with the second amplitude of the second comparison signal generated from the filtered signal and to output an amplitude comparison signal.08-22-2013
20080303597SEMICONDUCTOR CIRCUIT - There are included a Wilkinson divider/combiner dividing an input signal, amplifying elements amplifying outputs of the Wilkinson divider/combiner, and a Wilkinson divider/combiner combining outputs of respective amplifying elements. A variable capacitor element is connected to a branch point of a signal transmission path in the Wilkinson divider/combiner. A capacitance value of the variable capacitor element is controlled in correspondence with a frequency of an input signal, whereby a matching frequency is corrected to increase an operating frequency band.12-11-2008
20120235749DOHERTY AMPLIFIER - A Doherty amplifier includes a first amplifier, a second amplifier, a transmission line, a synthesizer, and an output load. The first amplifier amplifies an RF input signal according to a voltage applied to a supply terminal thereof. The second amplifier amplifies a peak component of the RF input signal according to a voltage applied to a supply terminal thereof. The transmission line is coupled to an output terminal of the first amplifier. The synthesizer is coupled to an output terminal of the transmission line and an output terminal of the second amplifier. It is set such that the voltage applied to the supply terminal of the first amplifier is lower than the voltage applied to the supply terminal of the second amplifier, and that an impedance value of the transmission line is smaller than a value twice an impedance value of the output load.09-20-2012
20110279184AREA EFFICIENT CONCURRENT MATCHING TRANSCEIVER - An integrated circuit for transmit and receive matching is described. The integrated circuit includes a transmit amplifier. The transmit amplifier includes a first transistor, a second transistor and a first inductor. The first inductor couples the first transistor to the second transistor. The integrated circuit also includes a low noise amplifier. The low noise amplifier includes a third transistor, a fourth transistor, the first inductor, a second inductor, a third inductor and a transformer. The second inductor couples the first inductor to the third transistor. The third inductor couples the third transistor to ground.11-17-2011
20110285467Distributed Doherty Amplifiers - Doherty and distributed amplifier (DA) designs are combined to achieve, wideband amplifiers with high efficiency dynamic range. A modified Doherty amplifier includes a wideband phase shifter providing first and second outputs, a main amplifier coupled to the first output, an auxiliary amplifier coupled to the second output, and a wideband combining network combining the outputs in phase. A multi-stage DA has a main output and a termination port, and a phase delay module and transforming network allowing power at the termination port to be combined in phase with power at the main output. In one combination, one or more stages of the DA may comprise a Doherty amplifier. In another combination, a modified series-type Doherty amplifying system is achieved by cascading main and auxiliary DAs. In any combination, Doherty topology may include a bias control module.11-24-2011
20110298544TWO STAGE DOHERTY AMPLIFIER - The invention refers to a Doherty power amplifier comprising a first power amplifier (Main PA) adapted to receive an input signal and adapted to provide a first output signal which is phase shifted with respect to the input signal. The amplifier further comprises a second power amplifier (Peak PA), adapted to receive a phase shifted input signal and adapted to provide a second output signal. The power amplifier is characterized in that at least one of the first or the second power amplifiers comprises a first driver power amplifier (T12-08-2011
20090179704LOAD INSENSITIVE BALANCED POWER AMPLIFIER AND RELATED OPERATING METHOD - A balanced power amplifier that is insensitive to load line variations is provided. The balanced power amplifier is suitable for use in wireless transmitter applications, such as cellular telephones, mobile computing devices, and portable communication devices. An embodiment of such a balanced power amplifier includes an input coupler, first and second amplifier devices, and a level adjustment component. The input coupler generates a first signal component and a second signal component from an input signal, where the first signal component and the second signal component are out of phase relative to one another. The first amplifier device generates a first output signal that is influenced by the first signal component, and the second amplifier device generates a second output signal that is influenced by the second signal component. The level adjustment component is coupled between the input coupler device and the input of the first amplifier device. The level adjustment component performs signal level tuning on its input signal. The signal level tuning is adaptively performed in response to the impedance characteristics of the load being driven by the balanced power amplifier.07-16-2009
20100188154Trans-impedance amplifier - Systems and apparatus for converting an input current signal into two or more output voltage signals on an integrated circuit. In one aspect, an integrated circuit includes a first trans-impedance amplifier that includes a first cascode amplifier; and a second trans-impedance amplifier that includes a second cascode amplifier, the second cascode amplifier and the first cascode amplifier sharing an input transistive element; where the first cascode amplifier is coupled to one or more first switches that disable the first trans-impedance amplifier, the second cascode amplifier is coupled to one or more second switches that disable the second trans-impedance amplifier, and control logic coupled to the one or more first switches and the one or more second switches disables at least one of the first trans-impedance amplifier or the second trans-impedance amplifier.07-29-2010
20090189695AMPLIFIER CIRCUIT HAVING STACKED MAIN AMPLIFIER AND PARALLEL SUB-AMPLIFIER - An amplifier circuit for amplifying an input signal to generate an output signal is provided. The amplifier circuit has a stacked main amplifier, a parallel sub-amplifier, and a signal combiner. The stacked main amplifier includes a first amplifier unit for outputting a first amplified signal generated from processing the input signal; and a second amplifier unit for outputting a second amplified signal generated from processing the first amplified signal. The first amplifier unit and the second amplifier unit share bias current. The parallel sub-amplifier is coupled to the stacked main amplifier according to a parallel connection fashion, and outputs a third amplified signal generated from processing the input signal. The signal combiner combines the second amplified signal and the third amplified signal to generate the output signal.07-30-2009
20090212870CASCODE-CASCADE POWER AMPLIFIER ASSEMBLY - A cascode-cascade power amplifier assembly is provided. Which includes a first common-source amplifier, a second common-source amplifier, a phase shift matching network coupled to the first common-source amplifier and the second common-source amplifier for providing a 90-degree phase shift and allowing less than 50% of the output power of the first common-source amplifier to be transmitted to the second common-source amplifier, a common-gate amplifier which forms a series circuit arrangement with the first-common source amplifier and a parallel circuit arrangement with the second common-source amplifier, and an equivalent quarter-wave or three-quarter wave circuit which forms a series circuit arrangement with the common-gate amplifier and a parallel circuit arrangement with the second common-source amplifier. According to the present invention, the first common-source amplifier and the common-gate amplifier form a cascode main amplifier, while the first common-source amplifier and the second common-source amplifier form a cascade auxiliary amplifier.08-27-2009
20090309662Systems and Methods for Power Amplifier with Integrated Passive Device - Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency.12-17-2009
20100079210POWER AMPLIFICATION DEVICE - Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.04-01-2010
20080315955CLASS L AMPLIFIER - A new Class L amplifier which dynamically switches between multiple pairs of power rails, and has the ability to select the most advantageous combination of rails for the minimization of power dissipation in the amplifier. In one embodiment, a bridged amplifier system includes two Class L amplifiers to drive a load.12-25-2008
20080290948IMPEDANCE TRANSFORMER FOR AMPLIFIER AND AMPLIFIER INCLUDING THE SAME - An amplifier has an input port, an output port, N gain elements in parallel, an input power splitter coupled between the input port of the amplifier and the input ports of the N gain elements, an output resistor chain extending between the output ports of the first through Nth gain elements, and an output power combiner coupled between the output ports of the N gain elements and the output port of the amplifier. The output power combiner presents a corresponding input impedance to each of the N gain elements. At least two of the input impedances presented by the output power combiner to the N gain elements are substantially different from each other.11-27-2008
20100127780POWER AMPLIFIERS WITH DISCRETE POWER CONTROL - Systems and methods are provided for power amplifiers with discrete power control. The systems and methods may include a plurality of unit power amplifiers; a plurality of primary windings, wherein each primary winding is connected to at least one respective output port of a respective one the plurality of unit power amplifiers; a secondary winding inductively coupled to the plurality of primary windings, where the secondary winding provides an overall output; a bias controller, where the bias controller provides a respective bias voltage based at least in part on a level of output power to one or more of the plurality of unit power amplifiers; and a switch controller, where the switch controller operates to activate or deactivate at least one of the plurality of unit power amplifiers via a respective control signal.05-27-2010
20120139640BOND WIRE TRANSFORMER - A bond wire transformer comprises a plurality of primary bond wires coupled in parallel; and a plurality of secondary bond wires coupled in parallel, each secondary bond wire being spaced apart from and oriented relative to a corresponding primary bond wire so as to achieve a desired mutual inductance between the corresponding primary and secondary bond wires, thereby providing magnetic coupling between the primary and secondary bond wires.06-07-2012
20080258820ACTIVE CIRCUIT HAVING IMPROVED LINEARITY USING MULITIPLE GATED TRANSISTOR - The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.10-23-2008
20080258819ACTIVE CIRCUIT HAVING IMPROVED LINEARITY USING MULTIPLE GATED TRANSISTOR - The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.10-23-2008
20130214866POWER AMPLIFIER TUBE AND POWER AMPLIFICATION METHOD - The present invention discloses a power amplifier tube and a power amplification method, wherein, the power amplifier tube includes a High Voltage Heterojunction Bipolar Transistor (HVHBT) power amplifier die and a Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) power amplifier die, and the HVHBT power amplifier die and the LDMOS power amplifier die are integrated in the same package. The present invention is applied to a Doherty amplifier, which designs a power tube by using a breakthrough new power amplifier die combination, and can achieve high efficient power amplification on the basis of ensuring a small volume of the power amplifier tube, compared with the existing Doherty amplifiers each of which uses the LDMOS power amplifier die.08-22-2013
20130120069HIGH FREQUENCY AMPLIFIER - According to one embodiment, a high frequency amplifier having a division circuit, FET cells, a stabilization circuit and a combination circuit is provided. The division circuit divides an input signal to produce a plurality of signals. The FET cells amplify the signals produced by the division circuit. The stabilization circuit provided with RC parallel-connected circuits which are respectively connected in series between the division circuit and gates of the FET cells. Each of the RC parallel-connected circuits has a capacitor and a resistor connected in parallel with each other. The combination circuit combines the signals amplified by the FET cells.05-16-2013
20110204980INTEGRATED DOHERTY AMPLIFIER - The invention relates to an integrated Doherty amplifier with an input network connecting the input to the main stage and to the peak stage, and with an output network connecting the main stage and the peak stage to the output. The output network has a shunt capacitor to signal-ground in parallel to a parasitic capacitance of the main stage, and has a shunt inductor between the main stage and signal ground. The shunt configuration enables to use the MMIC Doherty amplifier in a wide frequency range. At least some of the inductors of the input network and/or output network are implemented using bond wires. Their orientations and locations provide minimal mutual electromagnetic coupling between the wires and the return RF current paths.08-25-2011
20090085668Inductor Sharing in Radio Frequency Communications - Two or more low noise amplifiers are configured to amplify received radio frequency input signals and one or more shared load or source degeneration inductors are configured to be used for each of the two or more low noise amplifiers. Further, the one or more shared inductors can be configured to be used for processing two or more signal bands in a multi-band communication system.04-02-2009
20090140814RF POWER AMPLIFIER - An RF power amplifier includes a plurality of amplifier cells. Each amplifier cell includes a bipolar transistor and a base circuit that comprises an RF coupling capacitor, a bias resistor, a base capacitor, and a base resistor. The base circuit transmits DC bias current and an RF signal to the base of the bipolar transistor to provide a selectable frequency response. The base circuit may be implemented using a structure of stacked capacitors.06-04-2009
20090140815LOW NOISE AMPLIFIER FOR ULTRA WIDE BAND - A low noise amplifier (LNA) for ultra wide band receives and amplifies identical RF signals in different frequency bands, and includes more than one pair of narrow band LNAs coupled in parallel, and a load circuit which increases load impedance of the entire circuit of the narrow band LNAs. The LNA can not only amplify the RF signal in the UWB but also obtain the low noise and the high gain that are features of the conventional narrow band LNA.06-04-2009
20080315954Integrated Power Amplifier - Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.12-25-2008
20110140786DOHERTY AMPLIFIER - A combination amplifier, in particular a Doherty amplifier allowing dynamic biasing, is provided, the combination amplifier comprising a first amplifier (06-16-2011
20090085667INVERTED DOHERTY AMPLIFIER WITH INCREASED OFF-STATE IMPEDENCE - An amplifier that amplifies an input signal and provides the amplified signal to a load at a summing junction that has a first impedance value. The amplifier includes a splitter network receiving the input signal and providing a phase delayed signal and an undelayed signal; a carrier amplifier path amplifying the phase delayed signal and including a carrier amplifier and a first output match network coupled between the carrier amplifier and the summing node; and a peaking amplifier path amplifying the undelayed signal and including a peaking amplifier, a second output match network coupled to the peaking amplifier, and a phase delay element coupled between the second output match network and the summing node, wherein the phase delay element provides a degree of phase delay and has a designed characteristic impedance value that is larger than the first impedance value for increasing the off-state impedance of the peaking amplifier.04-02-2009
20090096529HIGH-FREQUENCY POWER AMPLIFIER - Amplification transistors respectively amplify an input signal. The output terminals of the amplification transistors are connected in series through respective transmission lines. A harmonic processing circuit is connected to an end of the array of collectors (output terminals) of the amplification transistors. The harmonic processing circuit suppresses harmonics included in output voltages of the amplification transistors. A transmission line and an MIM capacitor form a shorting circuit which establishes a short-circuit for the harmonics between the collector of the amplification transistor nearest to the harmonic processing circuit and the collector of the amplification transistor farthest from the harmonic processing circuit.04-16-2009
20090195317Multi-Mode High Efficiency Linear Power Amplifier - A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.08-06-2009
20120194275Distributed Doherty Amplifiers - Doherty and distributed amplifier (DA) designs are combined to achieve, wideband amplifiers with high efficiency dynamic range. A modified Doherty amplifier includes a wideband phase shifter providing first and second outputs, a main amplifier coupled to the first output, an auxiliary amplifier coupled to the second output, and a wideband combining network combining the outputs in phase. A multi-stage DA has a main output and a termination port, and a phase delay module and transforming network allowing power at the termination port to be combined in phase with power at the main output. In one combination, one or more stages of the DA may comprise a Doherty amplifier. In another combination, a modified series-type Doherty amplifying system is achieved by cascading main and auxiliary DAs. In any combination, Doherty topology may include a bias control module.08-02-2012
20120139641APPARATUS AND METHODS FOR CAPACITIVE LOAD REDUCTION - Apparatus and methods for capacitive load reduction are disclosed. In one embodiment, a power amplifier system includes an envelope tracker configured to provide a supply voltage to a plurality of power amplifiers. The power amplifiers include power supply inputs electrically connected in a star configuration so as to reduce a capacitive load of the envelope tracker. The distributed capacitance of the power amplifiers is used to provide RF grounding so as to reduce the size of or eliminated the use of bypass capacitors.06-07-2012
20100001802INTEGRATED DOHERTY TYPE AMPLIFIER ARRANGEMENT WITH HIGH POWER EFFICIENCY - The present invention relates to an integrated Doherty type amplifier arrangement and an amplifying method for such an arrangement, wherein a lumped element hybrid power divider (01-07-2010
20100225401SEMICONDUCTOR DEVICE - The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced.09-09-2010
20110057730RADIO FREQUENCY POWER AMPLIFIER - To provide a multiband RF power amplifier which operates with improved isolation at multiple bands and in multiple modes in each of the bands.03-10-2011
20100253435RF POWER AMPLIFIER CIRCUIT UTILIZING BONDWIRES IN IMPEDANCE MATCHING - A radio frequency amplifier module includes a first transmitting RF amplifier configured to produce a first amplified RF signal in response to an input RF signal, a second transmitting RF amplifier configured to produce a second amplified RF signal in response to the first amplified RF signal, and an inter-stage impedance matching circuit that is in part formed by a bond wire.10-07-2010
20100253434DISTRIBUTED AMPLIFICATION APPARATUS AND AMPLIFIER - Provided is a distributed amplification apparatus that outputs an output signal obtained by amplifying an input signal input thereto, comprising an input-side transmission line that transmits the input signal; an output-side transmission line that transmits the output signal; and a plurality of amplifiers that are provided in parallel between the input-side transmission line and the output-side transmission line, the amplifiers each amplifying the input signal transmitted on the input-side transmission line and supplying the amplified signal to the output-side transmission line. Each amplifier includes a transistor; a capacitor provided on a line that transmits the input signal to a gate terminal of the transistor; and a gate-ground resistance that is provided between the gate terminal of the transistor and a ground potential.10-07-2010
20090115529POWER AMPLIFIER HAVING INPUT ENDS COMBINED IN SERIES AND OUTPUT ENDS COMBINED IN SERIES - A power amplifier includes a first transformer, a first transistor, a first resistor, a second transformer, a second transistor, a second resistor, and a bias circuit. The first transformer drives the first transistor. The second transformer drives the second transistor. The first transformer is connected in series with the second transformer. The first transistor is connected in series with the second transistor. Therefore, the power amplifier has input impedance and output power both greater than those of a conventional power amplifier.05-07-2009
20110128079MULTI-BAND POWER AMPLIFIER WITH HIGH-FREQUENCY TRANSFORMER - A multi-band power amplifier in a wireless communication system includes: a plurality of matching circuits connected in parallel to an output stage of the power amplifier and corresponding to a plurality of different operation frequencies, respectively; and a plurality of high-frequency amplifiers connected to the plurality of matching circuits, respectively. The plurality of high-frequency amplifiers are selectively operated depending on the operation frequencies. Each of the high-frequency amplifiers may include a plurality of stages. Each of the matching circuits may include a high-frequency transformer.06-02-2011
20100301947RF POWER AMPLIFIER - The RF power amplifier includes first and second amplifiers Q12-02-2010
20110001566RADIO FREQUENCY POWER AMPLIFIER - A radio frequency power amplifier includes: an input terminal to which a radio frequency signal is applied; a first HBT which amplifies the radio frequency signal; a second HBT which amplifies the radio frequency signal; a matching circuit connected to an output node of the second HBT; a switch connected to an output node of the matching circuit; and an output matching circuit connected to an output node of the first HBT. The output node of the switch is connected to the output node of the first HBT via the output matching circuit, and an impedance looking into an output side of the radio frequency power amplifier from the output node of the switch is higher than an impedance looking into the output side of the radio frequency power amplifier from the output node of the first HBT.01-06-2011
20110109393Stacked pre-driver amplifier - A stacked pre-driver stage and a power amplifier including the stacked pre-driver stage are described. The stacked pre-driver stage comprises stacked pre-drivers arranged in series between a supply voltage and a reference voltage. Each pre-driver includes a pre-driving amplifier, together with MOS transistors. Each pre-driver is subject, in operation, to a voltage difference which is inferior to a maximum allowed use voltage of the MOS transistors with a largely reduced voltage drop across the regulator included in the power amplifier.05-12-2011
20110043286Direct conversion receiver - In accordance with at least one embodiment, apparatus providing a direct conversion receiver comprises a phase sampling detector (e.g., a quadrature sampling detector), which comprises a leading phase operational amplifier subsystem and a leading phase analog switch, as well as a lagging phase operational amplifier subsystem and a lagging phase analog switch. In accordance with at least one embodiment, a leading phase analog switch output terminal is coupled to a first leading phase operational amplifier input of the leading phase operational amplifier subsystem, and the leading phase analog switch output terminal is maintained continually at a ground potential. In accordance with at least one embodiment, at least one of element selected from a group consisting of: a resistor feedback switch, a commutating input switch in a resistive feedback loop, a differential capacitor, an unbiased analog switch input terminal, and an unbiased analog switch output terminal is provided.02-24-2011
20110241782POWER AMPLIFIER - A power amplifier comprises a series stack of power amplifier devices, connected in parallel to the amplifier input for receiving an RF input signal, and having output terminals being connected in series to the amplifier output. An intermediate coupling capacitor is connected between each adjacent pair of power amplifier devices in the series stack of power amplifier devices for DC isolation of said power amplifier devices. This reduces the required DC supply voltage, as well as allowing shorting of individual power amplifier devices in response to variation in the DC supply voltage.10-06-2011
20100052792AMPLIFYING APPARATUS, METHOD OF OUTPUT CONTROL AND CONTROL PROGRAM - [PROBLEMS] To provide, for example, a pulse input type power amplifying apparatus that can be operated at low voltage and low power, effectively suppressing generation of harmonic component.03-04-2010
20090033424RADIO RECEIVER - There is provided a method that comprises identifying a parasitic signal transfer in a filter using a signal-directed graph; and adding compensation paths to the filter to reduce or eliminate the effect of the parasitic signal transfer A corresponding filter is provided which comprises a plurality of amplifier stages that generate one or more filter poles; at least one component coupled to at least one of the amplifier stages, the component causing a parasitic effect in the filter; and means for applying a compensation current to the at least one amplifier stage to reduce or eliminate the parasitic effect. A radio receiver is further provided that comprises a filter for receiving and filtering in-phase and quadrature signals; an amplifier for receiving and amplifying one of said filtered in-phase and quadrature signals; means for receiving the amplified and filtered in-phase or quadrature signal from said amplifier, and for regenerating the other one of said in-phase and quadrature signals from said amplified and filtered signal.02-05-2009
20110248784MULTI-CHIP DOHERTY AMPLIFIER WITH INTEGRATED POWER DETECTION - In accordance with an exemplary embodiment of the present invention, a Doherty amplifier is provided for applications in radio frequency, microwave, and other electronic systems. An exemplary Doherty amplifier comprises a first MMIC having a first power detector, and a second MMIC having a second power detector. The first MMIC and the second MMIC are structurally identical. Furthermore, the first MMIC is configured as a carrier amplifier and the second MMIC is configured as a peaking amplifier. In the exemplary embodiment, an amplifier control bias of the carrier amplifier is a function of the power detected by the first power detector and an amplifier control bias of the peaking amplifier is a function of the power detected by the second power detector. The ability to assemble a Doherty amplifier using a single MMIC product results in a simple and less expensive manufacturing process.10-13-2011
20110068873RF Power Amplifiers with Linearization - Designs and techniques associated with power amplifiers for amplifying RF signals to provide variable power amplification and improved linearity in various RF amplification circuits, including power amplifiers operated under the power back-off conditions.03-24-2011
20090027130POWER AMPLIFIER - A power amplifier according to the present invention is operated by switching a main power amplifier and a subsidiary power amplifier. The idle current of the subsidiary power amplifier is smaller than the idle current of the main power amplifier. Each of the main power amplifier and the subsidiary power amplifier has a former amplification element for amplifying RF signals, a latter amplification element for amplifying output signals from the former amplification element, a former bias circuit for driving the former amplification elements, and a latter bias circuit for driving the latter amplification elements, respectively. The interval between the latter amplification element of the main power amplifier and the latter amplification element of the subsidiary power amplifier is not more than 100 μm. The interval between the latter amplification element of the main power amplifier and the latter bias circuit of the subsidiary power amplifier is not less than 200 μm.01-29-2009
20110254629MULTI STAGE AMPLIFIER - A multi-stage amplifier includes a first, a second, and a third sub-amplifier, each with respective input and output ports. The multi-stage amplifier also includes a common output port. The output port of the second sub-amplifier is connected to the output port of the first sub-amplifier as well as to the common output port of the multi-stage amplifier, and the output port of the third sub-amplifier is connected to the common output port. The electrical lengths of the connections from the second sub-amplifier's output port both to the first amplifier's output port and to the common output port are longer or shorter than one quarter of a wavelength (λ) of the frequency for which the multi-stage amplifier is intended to operate.10-20-2011
20080204146Wireless Communication Unit, Integrated Circuit and Biasing Therefor - A wireless communication unit comprises a semiconductor power amplifier device and a bias control circuit therefor. The bias control circuit comprises a detector for detecting at least a portion of the RF input signal; and a buffer for buffering the detected RF input signal. The detector is arranged to provide at least one inverted signal of the RF input signal. A semiconductor amplifier device is connected to an output of the bias control circuit and arranged to use an inverted detected signal to extract current from the output. When applied to a Doherty amplifier design, the biasing circuit requires fewer components, for example no video (buffer) amplifier and no delay block are required in the RF path. This facilitates integration of the circuit on a semiconductor die.08-28-2008
20110163813AMPLIFIER CIRCUIT - An amplifier circuit can include a first supply terminal to receive a first reference voltage; a second supply terminal to receive a second reference voltage; a first pair of circuit paths extending between the first and second supply terminals and including a respective output terminal, the first pair of circuit paths including a first pair of transistors, each having a gate connected to a respective one of the input terminals and a source connected to the first supply terminal, and a second pair of transistors, each having a gate connected via a first impedance to a gate of a respective first transistor, and a source coupled to the second supply terminal. The amplifier circuit can also include a second pair of circuit paths extending between the first and second supply terminals, the second pair of circuit paths including a third pair of transistors, each having a gate connected to one of the input terminals, and a source connected to the first supply terminal, and a fourth pair of transistors, each having a source connected to the second supply terminal, and a gate connected via a second impedance to a gate of a second transistor from a respective first circuit path.07-07-2011
20110133843POWER AMPLIFIER DEVICE - Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.06-09-2011
20110254628Multi-Stage Amplifier - The disclosed multi-stage amplifier (10-20-2011
20120146732DOHERTY AMPLIFIER - A Doherty amplifier has a distributor for branching an input signal into two signals, a carrier amplifier to which one of the signals is inputted from the distributor, a peak amplifier to which another signal of the signals is inputted from the distributor, and a synthesizer for synthesizing output signals from the carrier amplifier and the peak amplifier. The carrier amplifier has a compound semiconductor device with at least two terminals. The peak amplifier has a single element semiconductor device. Bias voltages having the same polarity are applied to the two terminals of the compound semiconductor device.06-14-2012
20110095828Multi-Mode High Efficiency Linear Power Amplifier - A power amplifier includes a plurality of amplification paths in which at least one amplification path is selectively enabled and disabled, wherein each amplification path includes an output impedance modification element and an output phase shift element that is operable independently from the output impedance modification element, and wherein the output impedance modification element in each amplification path provides selective impedance for each amplification path.04-28-2011
20100176885N-Way Doherty Distributed Power Amplifier with Power Tracking - A power amplifier using N-way Doherty structure with adaptive bias supply power tracking for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, the present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.07-15-2010
20110187458POWER AMPLIFIER - There is provided a power amplifier capable of improving harmonics characteristics of an output signal of an amplifier circuit by compensating a phase of the output signal. A power amplifier according to an aspect of the invention may include: an amplification section having a plurality of amplification units each amplifying a radio frequency (RF) signal according to a gain being controlled; a phase correction section performing phase correction by removing harmonic components of respective output signals from the plurality of amplification units of the amplification section; and a coupling section coupling the respective output signals phase-corrected by the phase correction section.08-04-2011
20110148528AMPLIFICATION CELL EMPLOYING LINEARIZATION METHOD AND ACTIVE INDUCTOR USING THE SAME - An amplification cell employing a linearization scheme and an active inductor using the same are provided. The active inductor includes: first and second amplification cells each including a main amplifying unit amplifying an input signal, an auxiliary amplifying unit connected in parallel to the main amplifying unit and eliminating nonlinear characteristics of the main amplifying unit while amplifying the input signal, and a negative load unit connected to an output terminal of the main amplifying unit and that of the auxiliary amplifying unit; a plurality of load resistors for tuning frequency; and a plurality of capacitors for tuning frequency, wherein an output from the first amplification cell is negatively fed back to the second amplification cell, an output from the second amplification cell is negatively fed back to the first amplification cell, and the plurality of load resistors and the plurality of capacitors are disposed on negative feedback paths of the first and second amplification cells.06-23-2011
20090027129High Power RF Solid State Power Amplifier System - A high power, high frequency, solid state power amplifier system includes a plurality of input multiple port splitters for receiving a high-frequency input and for dividing the input into a plurality of outputs and a plurality of solid state amplifier units. Each amplifier unit includes a plurality of amplifiers, and each amplifier is individually connected to one of the outputs of multiport splitters and produces a corresponding amplified output. A plurality of multiport combiners combine the amplified outputs of the amplifiers of each of the amplifier units to a combined output. Automatic level control protection circuitry protects the amplifiers and maintains a substantial constant amplifier power output.01-29-2009
20120038424BROADBAND POWER COMBINING METHOD AND HIGH POWER AMPLIFIER USING SAME - A broadband power combining method comprises the steps of converting desired voltage or current relation over a specified frequency band to specified polynomial transfer equation; steps of formulating the said specified polynomial transfer equation and extracting the coefficients of the denominator polynomial functions; steps of comparing the said voltage/current transfer function in first step with the design goal to decide if the design criteria is met; and a multiple-device power combining amplifier using same method is presented. This invention presents an automated method for the designing high power multiple-device amplifier based on a compact, robust and easily extendable combining circuit-synthesis method. By using multiple low-power transistors and the proposed circuit synthesis method, this broadband power combining amplifier can provide high power level with 100% power combining efficiency over any given wide bandwidth, thereby allowing for high-speed communication with less power consumption at lower cost when used in cellular or satellite transceiver systems.02-16-2012
20100225400METHOD AND SYSTEM FOR ON-CHIP IMPEDANCE CONTROL TO IMPEDANCE MATCH A CONFIGURABLE FRONT END - Methods and systems for on-chip impedance control to impedance match a configurable front end are disclosed and may include selectively enabling one or more amplifiers coupled to taps on a multi-tap transformer in a chip including the amplifiers. The impedances of the amplifiers may be matched to impedances of the taps on the transformer. The amplifiers may include low noise amplifiers wherein the input impedance of each of the low noise amplifiers may be different. The amplifiers may include power amplifiers wherein an output impedance of each of the power amplifiers may be different. The transformer may be coupled to an on-chip antenna, or to an antenna integrated on a package coupled to the chip. The multi-tap transformer may be integrated on the package. RF signals may be communicated via the selectively enabled amplifiers and the multi-tap transformer. The multi-tap transformer may include ferromagnetic materials integrated in the chip.09-09-2010
20110050348RADIO FREQUENCY POWER AMPLIFIER - An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates.03-03-2011
20110316633AMPLIFYING DEVICE - In an amplifying device, an amplification unit includes a first amplifier which amplifies a signal and a second amplifier which amplifies a signal when the signal has a predetermined level or more. A detector detects a temperature change. A calculation unit calculates an adjacent channel leakage power ratio of an output signal output from the amplification unit based on detection of the temperature change of the detector. A controller controls gate biases of the first and second amplifiers based on the adjacent channel leakage power ratio calculated by the calculation unit.12-29-2011
20090045878Amplifier - An amplifier includes a carrier amplifier which performs signal amplification at all times, a peak amplifier which operates only at a time when the high electric power is outputted, a combiner which combines the output from the carrier amplifier and the peak amplifier, and a distributor which distributes an input signal to the carrier amplifier and the peak amplifier. The carrier amplifier and the peak amplifier are included in a single package transistor.02-19-2009
20120001695RADIO FREQUENCY POWER AMPLIFIER - The radio frequency power amplifier is connected between an other end of the first switching element and an other end of the second switching element, supplies power to a second amplifier via the first switching element and a second matching circuit, and includes a first power supply line for supplying power to the third amplifier via a second switching element and a third matching circuit, and the other end of the first switching element is connected to an input node of the first matching circuit, the other end of the second switching element is connected to the input node of the first matching circuit via the first power supply line, and an impedance of an output side of the RF power amplifier as viewed from an output node of the third amplifier is higher than an impedance of the RF power amplifier as viewed from an output node of the second amplifier.01-05-2012
20090167438HARMONIC TUNED DOHERTY AMPLIFIER - Disclosed is a Doherty amplifier which includes a carrier amplifier for always performing a signal amplification operation regardless of a level of an input signal, a peaking amplifier for performing an amplification operation, starting from a high power output where a level of an input signal is equal to or greater than a predetermined level, an output combination circuit for combining and outputting outputs of the carrier amplifier and the peaking amplifier, and an input division circuit for dividing an input signal into the carrier amplifier and the peaking amplifier, the Doherty amplifier including a carrier amplifier output harmonic impedance tuning network which is installed at a rear end of the carrier amplifier so as to tune an output harmonic impedance of the carrier amplifier, and a peaking amplifier output harmonic impedance tuning network which is installed at a rear end of the peaking amplifier so as to tune an output harmonic impedance of the peaking amplifier.07-02-2009
20120013405RF DETECTOR WITH CREST FACTOR MEASUREMENT - An RF detector configured to provide two outputs, one being a function of the true RMS power level of an RF input signal, and the other being a function of the instantaneous/peak power of the RF input signal, normalized to the average power level. The RF detector includes a variable gain detection subsystem including a single detector or detector array that provides a representation of the power level of the RF input signal. The detector or detector array is common to both the RMS power detection channel and the instantaneous/peak power detection channel of the RF detector. A method of RF detection includes providing representations of the RF input signal at different gain levels, selecting one or more of the representations, and averaging the selected signals. The gain levels of the selected representations is adjusted to provide information about the average power level of the RF input signal.01-19-2012
20120056676RF Amplifier with Digital Filter for Polar Transmitter - An RF power amplifier for a polar transmitter converts an amplitude component signal into a 1-bit digital amplitude signal, which is fed to a digital finite impulse response filter. Successive taps of the filter each have an RF amplification stage arranged to amplify successively delayed versions of the 1-bit digital amplitude signal, the amplifying being according to a respective tap coefficient, and according to the RF carrier modulated by the phase component. The filter is arranged to combine the outputs of the taps to provide the amplified RF signal. The power amplifier uses a one bit stream which therefore has only two states (2 values), thus achieving linearity in principle. Device mismatch between taps does not lead to non-linearity or distortion.03-08-2012
20120154054APPARATUS AND METHODS FOR OSCILLATION SUPPRESSION - Apparatus and methods for oscillation suppression are disclosed. In one embodiment, a power amplifier system includes a plurality of power amplifiers for amplifying an input radio frequency (RF) signal to generate an output RF signal. The plurality of power amplifiers include a first power amplifier, a second power amplifier, and a third power amplifier, each of which are configured to be individually switchable between an enabled state and a disabled state so as to control a power amplification of the power amplifier system. A first capacitor is electrically connected between the outputs of the first and second power amplifiers, and a second capacitor is electrically connected between the outputs of the second and third power amplifiers. The first and second capacitors are configured to allow signals generated using the first, second, and third power amplifiers to combine constructively to generate the output RF signal.06-21-2012
20120025915DOHERTY AMPLIFIER - A Doherty amplifier includes: an input distributor; a coupler; a plurality of Doherty circuit connected between the input distributor and the coupler; wherein each of Doherty circuits has a carrier amplifier, a peaking amplifier, a distributor distributing a input signal to the carrier amplifier and the peaking amplifier, and a combiner that transforms an output impedance of the carrier amplifier and combines outputs of the carrier amplifier and the peaking amplifier.02-02-2012
20120025916DOHERTY AMPLIFIER - An amplifier includes a Doherty amplifier composed of a distributor distributing an input signal to two signals, a carrier amplifier that receives one of the two signals and has a first FET, a peaking amplifier that receives the other one of the two signals and has a second FET, and a combiner that transforms an output impedance of the carrier amplifier and combines outputs of the carrier amplifier and the peaking amplifier, and a voltage controller that changes at least one of a gate voltage and a drain voltage supplied to at least one of the first FET and the second FET in accordance with a frequency of the input signal when the frequency of the input signal varies.02-02-2012
20120133442RADIOFREQUENCY AMPLIFIER - An integrated radiofrequency amplifier with an operational frequency includes first and second Doherty amplifiers each having a main device, and a peak device connected at respective inputs and outputs by respective phase shift elements configured to provide a 90 degree phase shift at the operational frequency. An input of the amplifier is connected to the input of the main device of the first Doherty amplifier, an output of the amplifier is connected to the outputs of the peak devices of the first and second Doherty amplifiers and the input of the peak device of the first Doherty amplifier is connected to the input of the main device of the second Doherty amplifier by a phase shift element providing a 90 degree phase shift at the operational frequency.05-31-2012
20090058532NITRIDE SEMICONDUCTOR DEVICE, DOHERTY AMPLIFIER AND DRAIN VOLTAGE CONTROLLED AMPLIFIER - A nitride semiconductor device includes a substrate, a stacked semiconductor structure formed over the substrate and including a electron channel layer of an undoped nitride semiconductor and an electron supplying layer of an n-type nitride semiconductor formed epitaxially over the electron channel layer, the n-type nitride semiconductor having an electron affinity smaller than an electron affinity of said undoped nitride semiconductor and a two-dimensional electron gas being formed in the electron channel layer along an interface to the electron supply layer, a gate electrode formed over the stacked semiconductor structure in correspondence to a channel region, and source and drain electrodes formed over the stacked semiconductor structure in ohmic contact therewith respectively at a first side and a second side of the gate electrode, the stacked semiconductor structure including, between the substrate and the electron channel layer, an n-type conductive layer and a barrier layer containing Al formed consecutively and epitaxially.03-05-2009
20100007423INTEGRATED POWER AMPLIFIER - Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.01-14-2010
20120262237POWER AMPLIFIER DEVICE - A power amplifier device that satisfies both delivering a high output and reducing the chip area occupied by the power amplifier device. Over a substrate, are primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern extends from a portion of a region inside the circular primary inductor into regions outside the primary inductor, and grounded at a plurality of points in the regions outside the primary inductor. The primary inductors are coupled to the ground pattern through transistors.10-18-2012
20120229217HIGH-FREQUENCY POWER AMPLIFIER - There is a need to provide a high-frequency power amplifier capable of reducing a talk current and reducing a phase deviation in output. The high-frequency power amplifier includes differently sized first through fifth power amplification transistors and impedance matching circuits for example. The high-frequency power amplifier changes a signal path to be used in accordance with a power specification signal. The high-frequency power amplifier uses a signal path from the first transistor to the second transistor in high power mode. The high-frequency power amplifier uses a signal path from the first transistor to the third transistor in medium power mode. The high-frequency power amplifier uses a signal path from the fourth transistor to the fifth transistor in low power mode. The high-frequency power amplifier is configured so that each of the signal paths includes the same number of stages of power amplification transistors and impedance matching circuits.09-13-2012
20120319780WIDEBAND DOHERTY AMPLIFIER CIRCUIT HAVING A CONSTANT IMPEDANCE COMBINER - A three way wideband Doherty amplifier circuit includes a first peaking amplifier operable to turn on at a first power level, a second peaking amplifier operable to turn on at a second power level below the first power level and a main power amplifier operable to turn on at all power levels. The main power amplifier has a high impedance load modulated state when the first and second peaking amplifiers are turned off. The three way wideband Doherty amplifier circuit further includes a constant impedance combiner connected to an output of each amplifier. The constant impedance combiner has a characteristic impedance which matches the impedance of the main amplifier in the high impedance load modulated state with or without an output matching device connecting the main amplifier output to the constant impedance combiner, as viewed from the output of the main amplifier.12-20-2012
20130169367ACTIVE CIRCULATOR - An active circulator for a microwave system. The microwave system includes at least one front-end arrangement. Each front-end arrangement includes a power amplifier function arranged to deliver an amplified output signal via a circulator function to an antenna in a transmit mode. A low noise amplifier function is arranged to amplify an input signal from the antenna via the circulator function in a receive mode. The circulator function is arranged to direct a signal flow between the transmit and receive modes. Each front-end arrangement includes one active circulator. The active circulator includes the power amplifier function, the low noise amplifier function and the circulator function of directing a signal flow. The functions integrated into one module. Also, a method to manufacture the active circulator.07-04-2013
20110037520MULTISTAGE AMPLIFYING CIRCUIT - A multistage amplifying circuit includes a first amplifying circuit that either samples a first analog voltage input or amplifies a difference between the first analog voltage and a first digital voltage converted from the first analog voltage, in response to a control signal. A second amplifying circuit either samples a second analog voltage input or amplifies a difference between the second analog voltage and a second digital voltage converted from the second analog voltage, in response to the control signal. A common amplifier receives output voltages of the first amplifying circuit and the second amplifying circuit and either resets the output voltage of the first amplifying circuit and determines an output voltage by using the second amplifying circuit, or resets the output voltage of the second amplifying circuit and determines an output voltage by using the first amplifying circuit, in response to the control signal.02-17-2011
20120268213HIGH POWER AMPLIFIER - A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.10-25-2012
20110304400HIGH EFFICIENCY BALANCED OUTPUT AMPLIFIER SYSTEM - A high efficiency amplifier system may include multiple output stages cooperatively operating to produce an amplified output signal. The amplifier system may be used in an audio system. The amplifier system may include a non-switchmode amplifier stage cooperatively operating with a switchmode amplifier stage to generate the amplifier output signal. The non-switchmode amplifier stage may selectively enable and disable the switchmode amplifier stage to optimize efficient operation. In addition, the switchmode amplifier stage may include multiple switching stages operated with interleave. The switching stages may be controlled to balance current output of the respective switching stages based on a measured current flow in at least one of the switching stages.12-15-2011
20120092074APPARATUS AND METHOD FOR A SWITCHED CAPACITOR ARCHITECURE FOR MULTI-BAND DOHERTY POWER AMPLIFIERS - An apparatus and method for a switched capacitor architecture for multi-band Doherty power amplifiers are provided. The apparatus is for amplifying Radio Frequency (RF) signals, and the apparatus includes a multi-band Power Amplifier (PA) including a plurality of input matching circuits including switchable capacitors, and a plurality of output matching circuits including the switchable capacitors, wherein the multi-band PA is tunable to more than one RF frequency band.04-19-2012
20120286876MULTI-BAND POWER AMPLIFIER - Disclosed is a multi-band power amplifier capable of operating at multiple frequency bands. The multi-band power amplifier includes: a power amplification unit which amplifies an input signal; a matching network circuit which provides impedance matching between the power amplification unit and a load; and an auxiliary amplification unit which additionally supplies a certain magnitude of electric current to the load.11-15-2012
20120286875SYSTEM PROVIDING SWITCHABLE IMPEDANCE TRANSFORMER MATCHING FOR POWER AMPLIFIERS - System providing switchable impedance transformer matching for power amplifiers. In an exemplary implementation, an amplifier providing switchable impedance matching includes an output inductor (L11-15-2012
20130009709POWER AMPLIFIER - A power amplifier comprises a plurality of primary inductors provided on a substrate in a circular geometry as a whole; a plurality of amplifier pairs; a secondary inductor; and a connection wiring. Each amplifier pair is coupled to two ends of a corresponding primary inductor, and amplifies and output to the corresponding primary inductor a pair of first and second signals given as differential input signals, respectively. The secondary inductor is provided adjacent to the primary inductors in a circular geometry, further combines and outputs signals made by combining first and second signals in each primary inductor. The connection wiring is provided inside the primary inductors on the substrate and electrically couples middle points of respective primary inductors with each other.01-10-2013
20130009707N-WAY DOHERTY DISTRIBUTED POWER AMPLIFIER WITH POWER TRACKING - A power amplifier using N-way Doherty structure with adaptive bias supply power tracking for extending the efficiency region over the high peak-to-average power:ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.01-10-2013
20130009708WIDEBAND DOHERTY AMPLIFIER CIRCUIT WITH IMPEDANCE COMBINER - An amplifier circuit includes a first amplifier operable to turn on at a first power level, a second amplifier operable to turn on at a second power level below the first power level and a third amplifier operable to turn on at all power levels. A first power combiner is operable to combine an output of the third amplifier with an output of the second amplifier at a first power combining node to form a first combined amplifier output. A second power combiner is operable to combine the first combined amplifier output with an output of the first amplifier at a second power combining node to form a second combined amplifier output. An impedance transformer is operable to transform a load impedance of the amplifier circuit to a transformed impedance at the second power combining node, the transformed impedance matching an impedance of the first and second power combiners.01-10-2013
20120146731APPARATUS AND METHODS FOR CAPACITIVE LOAD REDUCTION - Apparatus and methods for capacitive load reduction are disclosed. In one embodiment, a power amplifier system includes a plurality of power amplifiers and an envelope tracking module for generating a supply voltage for the power amplifiers. The power amplifier system further includes a switch and a decoupling capacitor operatively associated with a first power amplifier of the system. The switch is configured to electrically float an end of the decoupling capacitor when the first power amplifier is disabled so as to reduce capacitive loading of the envelope tracker and to operate as a dampening resistor when the power amplifier is enabled so as to improve the stability of the system.06-14-2012
20130021104AMPLIFIER ARRANGEMENT - An amplifier arrangement for amplifying a radio signal comprising at least a first amplifier module and a second amplifier module is presented wherein a splitter stage for dividing an amplifier stage input signal into several signal portions. The signal portions are amplified in the at least two parallel amplifier modules. A combiner stage combines the separate amplifier output signals into a single amplifier arrangement output signal.01-24-2013
20130169366DOHERTY AMPLIFIER AND SEMICONDUCTOR DEVICE - A Doherty amplifier includes a carrier amplifier including a first FET, the first FET having a plurality of gate electrodes, and a peaking amplifier including a second FET, the second FET having a plurality of gate electrodes, a gate-to-gate interval of the gate electrodes of the second FET being shorter than a gate-to-gate interval of the first FET.07-04-2013
20130141166POWER AMPLIFIER TUBE AND POWER AMPLIFICATION METHOD - A power amplifier tube and a power amplification method are disclosed in the present invention. The power amplifier tube includes a high voltage heterojunction bipolar transistor (HVHBT) power amplifier tube core and a high electron mobility transistor (HEMT) power amplifier tube core, and the HVHBT power amplifier tube core and the HEMT power amplifier tube core are integrated in the same encapsulation. In the present invention, it should be configured as a Doherty amplifier, and the power tube is designed in a breakthrough combination manner of new power amplifier tube cores, compared with all the existing Doherty amplifiers which employ LDMOS power amplifier tube cores, the power amplification with high efficiency can be achieved on the basis of ensuring small volume of power amplifier tube.06-06-2013
20110260797SYSTEMS AND METHODS FOR A DISCRETE RESIZING OF POWER DEVICES WITH CONCURRENT POWER COMBINING STRUCTURE FOR RADIO FREQUENCY POWER AMPLIFIER - Systems and methods are provided for discrete resizing of power devices. The systems and methods can include a plurality of unit power amplifiers arranged in parallel, where each unit power amplifier includes at least one first input port, at least one first output port, and a plurality of sub-power-device cells configured in parallel between the at least one first input port and the at least one first output port; a switch controller, where the controller is operative to activate or deactivate at least one of the plurality of sub-power-device cells of a respective unit power amplifier; and an output matching network, where the matching network is configured to combine respective outputs from the respective plurality of unit power amplifiers to generate a system output, wherein during an operational state, all of the plurality of unit power amplifiers contribute outputs to the matching network to generate the system output.10-27-2011
20110273236POWER CONTROL OF RECONFIGURABLE OUTPHASING CHIREIX AMPLIFIERS AND METHODS - Various embodiments relate to a reconfigurable integrated digital Chireix out-phasing power amplifier for use in high power base stations is described and a related method of said design. The power amplifier may include a power transistor circuitry having plurality of power transistors and shunt-series circuitry (L11-10-2011
20110273235FEEDFORWARD CONTROLLED ENVELOPE MODULATOR AND FEEDFORWARD CONTROL CIRCUIT THEREOF - The present disclosure illustrates a feedforward controlled envelope modulator and a feedforward control circuit thereof. The feedforward controlled envelope modulator comprises a linear amplifier circuit, a switching amplifier, and a feedforward control circuit. The linear amplifier circuit amplifies an input voltage signal, so as to output an output voltage signal to a load node. The switching amplifier receives a comparison signal, and outputs a switching current to the load node according to the comparison signal. The feedforward control circuit comprises a duplicate linear amplifier circuit and a hysteresis comparator. The duplicate linear amplifier circuit amplifies the input voltage signal, so as to output a reference voltage signal, wherein an amplifying gain of the duplicate linear amplifier circuit is identical to an amplifying gain of the linear amplifier circuit. The hysteresis comparator compares the output voltage signal and the reference voltage signal, so as to output the comparison signal.11-10-2011
20110273234RECONFIGURABLE OUTPHASING CHIREIX AMPLIFIERS AND METHODS - Various embodiments relate to a reconfigurable integrated digital Chireix out-phasing power amplifier for use in high power base stations is described and a related method of said design. The power amplifier may include a power transistor circuitry having plurality of power transistors and shunt-series circuitry (L11-10-2011
20130099866System and Method for a Multi-Band Power-Amplifier - In accordance with an embodiment, a method of amplifying a plurality of frequency bands includes amplifying a first frequency band and a second frequency band with a main amplifier, amplifying the first frequency band with a first peaking amplifier, amplifying the second frequency band with a second peaking amplifier, and simultaneously load modulating an output of the main amplifier with an output of the first peaking amplifier and with an output of the second peaking amplifier.04-25-2013
20130099867APPARATUS FOR DOHERTY POWER AMPLIFIER AND METHOD FOR POWER AMPLIFICATION - The present invention discloses a Doherty power amplifier apparatus and a power amplification method. The apparatus includes an auxiliary power amplifier apparatus and a main power amplifier apparatus, the auxiliary power amplifier apparatus is used to amplify signal power by adopting a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device; and the main power amplifier apparatus is used to amplify signal power by adopting a High Electron Mobility Transistors (HEMT) device. The present invention adopts the HEMT device as the main power amplifier. Compared with the existing Doherty power amplifier in which both the main power amplifier and the auxiliary power amplifier adopt LDMOS, with the present invention, the power amplifier efficiency of the main power amplifier in the Doherty power amplifier can be enhanced, thereby making the power amplifier efficiency of the whole Doherty power amplifier be substantially increased.04-25-2013
20130127542ACTIVE ANTENNA ARRANGEMENT WITH DOHERTY AMPLIFIER - A Doherty amplifier (05-23-2013
20130127543POWER AMPLIFIER - A power amplifier includes an input terminal into which an input signal is input; a first amplification element amplifying the input signal; a second amplification element amplifying an output signal of the first amplification element; an output terminal from which an output signal of the second amplification element is output; a first matching circuit connected between an output of the second amplification element and the output terminal; a first switch connected between an output of the first amplification element and an input of the second amplification element; a second switch having a first end connected to the output of the first amplification element, and a second end; and a second matching circuit having a first end connected to the second end of the second switch, and a second end directly connected to the output of the second amplification element.05-23-2013
20100283548MULTI-PRIMARY DISTRIBUTED ACTIVE TRANSFORMER AMPLIFIER POWER SUPPLY AND CONTROL - An integrated power combiner is disclosed. The power combiner includes a first circular geometry primary winding having one or more inductive elements, such as an active winding with one or more driver stages. A circular geometry secondary winding is disposed adjacent to the first primary winding, such as an active winding with one or more driver stages. A second circular geometry primary winding is disposed adjacent to the secondary winding and has one or more inductive elements. One or more connections are provided between one or more of the inductive elements of the first circular geometry primary winding and one or more of the inductive elements of the second circular geometry primary winding.11-11-2010
20100308920WIDE-BAND AMPLIFIER CIRCUIT WITH IMPROVED GAIN FLATNESS - There is provided a wide-band amplifier circuit with improved gain flatness. The wide-band amplifier circuit includes a first resonant load unit connected to an operating power terminal, providing a preset first load, and forming a preset first resonant point, a second resonant load unit connected to the operating power terminal, providing a preset second load, and forming a second resonant point set to a frequency different from the first resonant point; a first amplification unit receiving operating power via the first load of the first resonant load unit, having an amplification band characteristic determined according to the first resonant point of the first resonant load unit, and amplifying an input signal; and a second amplification unit receiving operating power via the second load, having an amplification band characteristic determined according to the second resonant point, and amplifying an input signal from the first amplification unit.12-09-2010
20110234321MULTI-FUNCTION MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) OPERATING AS AMPLIFIER SWITCH - A multi-function MMIC operated by a switch using an amplifier is disclosed. A switch may be configured by connecting an input or an output of a plurality of amplifiers, and an insertion loss may be reduced by selecting a transmission mode or a reception mode of an MMIC using the switch. A noise characteristic, a power characteristic, and a gain characteristic may also be improved.09-29-2011
20120019326DOHERTY AMPLIFIER AND SEMICONDUCTOR DEVICE - A Doherty amplifier includes a carrier amplifier including a first FET, the first FET having a plurality of gate electrodes, and a peaking amplifier including a second FET, the second FET having a plurality of gate electrodes, a gate-to-gate interval of the gate electrodes of the second FET being shorter than a gate-to-gate interval of the first FET.01-26-2012
20130207726AMPLIFICATION DEVICE AND AMPLIFICATION METHOD - In an amplification device, an amplification unit has a transistor and amplifies a signal that is input. A control unit applies, when a power source is turned on, a pinch-off voltage to a gate of the transistor before applying a drain bias voltage to a drain of the transistor and then applies a gate bias voltage to the gate of the transistor.08-15-2013

Patent applications in class Including plural amplifier channels