Entries |
Document | Title | Date |
20080231360 | ARRANGEMENT OF SIGNAL LINE PAIRS AND AMPLIFIERS - An arrangement of signal line pairs and amplifiers is disclosed. One embodiment provides each signal line pair of a group of signal line pairs that are directly adjacent and run parallel to one another is respectively assigned an amplifier from a group of amplifiers arranged successively in a signal line direction. Each signal line pair includes a first and a second signal line, between which the amplifier assigned to the respective signal line pair is arranged. The position of an amplifier is assigned to a specific signal line pair in the amplifier group along the signal line direction is chosen in such a way that a first coupling section which forms the first signal line assigned to the respective amplifier together with its adjacent lines along the amplifier group, and a second coupling section, which forms the second signal line assigned to the respective amplifier together with its adjacent lines along the amplifier group, substantially have the same coupling properties. | 09-25-2008 |
20090219089 | Amplifier arrangement and method - An amplifier arrangement having a transistor arrangement comprising a first transistor ( | 09-03-2009 |
20090231034 | Inverse mode SiGe HBT cascode device and fabrication method - Disclosed is a device structure using an inverse-mode cascoded Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) beneficial in applications requiring radiation hardened circuitry. The device comprises a forward-mode common-emitter HBT cascoded with a common-base inverse-mode HBT, sharing a common sub-collector. An exemplary device was measured to have over 20 dB of current gain, and over 30 dB of power gain at 10 GHz, thus demonstrating the use of these circuits for high-frequency circuit applications. In addition, the radiation response and voltage limits were characterized and showed to have negligible performance effects in typical operating conditions. Due to the unique topology, the disclosed device has the benefit of being a more compact cascode design and the additional benefit of providing significantly improved radiation tolerance. | 09-17-2009 |
20090267689 | HIGH EFFICIENCY AMPLIFIER WITH REDUCED PARASITIC CAPACITANCE - A semiconductor amplifier is provided comprising, a substrate and one or more unit amplifying cells (UACs) formed on the substrate, wherein each UAC is laterally surrounded by a first lateral dielectric filled trench (DFT) isolation wall extending at least to the substrate and multiple UACs are surrounded by a second lateral DFT isolation wall of similar depth outside the first isolation walls, and further semiconductor regions lying between the first isolation walls when two or more unit cells are present, and/or lying between the first and second isolation walls, are electrically floating with respect to the substrate. This reduces the parasitic capacitance of the amplifying cells and improves the power added efficiency. Excessive leakage between buried layer contacts when using high resistivity substrates is avoided by providing a further semiconductor layer of intermediate doping between the substrate and the buried layer contacts. | 10-29-2009 |
20090267690 | SIGNAL MODULATION DEVICE AND SIGNAL AMPLIFIER COOPERATIVE THEREWITH - A signal modulation device and a signal amplifier cooperative therewith. The signal modulation device includes a local oscillation signal source, a baseband signal source, a first NMOS transistor, and a second NMOS transistor, wherein the first and second NMOS transistors are coupled with the baseband signal source and form a circuit architecture of a Gilbert-cell based differential pair to be directly switched by a differential baseband signal, and a high-frequency signal from the local oscillation signal source is controlled by the baseband signal so as to generate an amplitude-modulation high-frequency signal at an output end. The single-stage signal power amplifier amplifies the amplitude-modulation signal from the preceding circuit so as to increase the magnitude of signals transmitted and simplify the preceding digital/analog signal conversion circuit in a conventional amplitude-modulation circuit. | 10-29-2009 |
20100156531 | POWER AMPLIFIER, INTEGRATED CIRCUIT, AND COMMUNICATION APPARATUS - A power amplifier of the present invention includes (i) a bipolar transistor for amplifying a signal supplied via a base terminal, so as to obtain an amplified signal, and outputting the amplified signal via a collector terminal and (ii) an inductor between an emitter terminal of the bipolar transistor and a ground. An inductance between the emitter terminal and the ground is larger than a parasitic inductance between the emitter terminal and the ground between which the inductor is not provided. This allows the bipolar transistor to increase an output power without increasing an emitter area. As a result, the present invention makes it possible to provide a highly efficient high-power power amplifier. | 06-24-2010 |
20100182082 | AMPLIFIER CIRCUIT WITH A FIRST AND A SECOND OUTPUT LINE - The present invention relates to an amplifier circuit ( | 07-22-2010 |
20110248780 | CASCODE AMPLIFIER WITH INCREASED LINEARITY - An amplifier circuit for current amplification. An input stage is adapted to receive an input signal. At least one current multiplication stage is connected to the input stage. The current multiplication stage is adapted to receive a current signal from the input stage and to produce a multiplied output current signal at an output of the amplifier circuit. The current multiplication stage includes at least two current multiplication circuits connected to each other. Each current multiplication circuit is adapted to produce an output current signal essentially equal to the current signal from the input stage, such that the output current signal at an output of the amplifier circuit includes a sum of the current signals received at each current multiplication circuit. A method of improving linearity in an amplification circuit. | 10-13-2011 |
20120139630 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue | 06-07-2012 |
20120161867 | METAMATERIAL POWER AMPLIFIER SYSTEMS - Power amplifying systems and modules and components therein are designed based on CRLH structures, providing high efficiency and linearity. | 06-28-2012 |
20120229210 | OVERLAY CLASS F CHOKE - Embodiments of the present disclosure relate to an overlay class F choke of a radio frequency (RF) power amplifier (PA) stage and an RF PA amplifying transistor of the RF PA stage. The overlay class F choke includes a pair of mutually coupled class F inductive elements, which are coupled in series between a PA envelope power supply and a collector of the RF PA amplifying transistor. In one embodiment of the RF PA stage, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. The collector of the RF PA amplifying transistor provides the RF stage output signal. The PA envelope power supply provides an envelope power supply signal to the overlay class F choke. The envelope power supply signal provides power for amplification. | 09-13-2012 |
20130038390 | ATOMIC LAYER DEPOSITION ENCAPSULATION FOR POWER AMPLIFIERS IN RF CIRCUITS - Power amplifiers and methods of coating a protective film of alumina (Al | 02-14-2013 |
20130088295 | Multi-Band Power Amplifier - A power amplifier ( | 04-11-2013 |
20130234794 | MICROWAVE SEMICONDUCTOR AMPLIFIER - A microwave semiconductor amplifier includes a semiconductor amplifier element, an input matching circuit and an output matching circuit. The semiconductor amplifying element includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit is connected to the input electrode. The output matching circuit includes a bonding wire and a first transmission line. The bonding wire includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line. A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit matches the capacitive output impedance of the semiconductor amplifying element to the fundamental impedance of the external load. | 09-12-2013 |
20130293297 | AMPLIFICATION CIRCUIT COMPRISING INPUT SIGNAL LIMITING NETWORK - The present invention relates to an integrated amplification circuit for a transducer signal comprising a semiconductor substrate. The semiconductor substrate comprises a signal limiting network comprising first and second parallel legs coupled between an input of a preamplifier and a first predetermined electric potential of the integrated amplification circuit. The first leg comprises a plurality of cascaded semiconductor diodes coupled to conduct current in a first direction through the limiting network and the second leg comprises a plurality of cascaded semiconductor diodes coupled to conduct current in a second direction through the limiting network. A current blocking member is configured to break a parasitic current path between an anode or a cathode of a semiconductor diode of the first leg or the second leg and the semiconductor substrate. | 11-07-2013 |
20140002187 | INTEGRATED RF FRONT END SYSTEM | 01-02-2014 |
20140002188 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS | 01-02-2014 |
20140253232 | AMPLIFIER CIRCUIT - An amplifier circuit includes: a first filter that receives input of amplitude information of an input signal, and performs filtering so that a gain of a frequency component higher than a first cutoff frequency becomes greater than a gain of a frequency component lower than the first cutoff frequency; a power supply circuit that has a low-pass filter characteristic that a gain of a frequency component lower than a second cutoff frequency is greater than a gain of a frequency component higher than the second cutoff frequency, and receives input of amplitude information outputted from the first filter and generates a power supply voltage corresponding to the amplitude information outputted from the first filter; and an amplifier that receives supply of the power supply voltage generated by the power supply circuit, and amplifies a signal based on the input signal. | 09-11-2014 |
20140266434 | CIRCUITS FOR AND METHODS OF IMPLEMENTING A GAIN STAGE IN AN INTEGRATED CIRCUIT - A circuit for implementing a gain stage in an integrated circuit is described. The circuit comprises a first inductor formed in a first plurality of metal layers; a second inductor formed in a second plurality of metal layers, the second inductor coupled to a center tap of the first inductor; and wherein the second inductor has a diameter that is less than a diameter of the first inductor. A method of implementing a gain stage in an integrated circuit is also described. | 09-18-2014 |
20150008980 | APPARATUS AND METHOD FOR MATCHING HARMONICS - An apparatus of a power amplifier is provided. The apparatus includes an input boosting circuit configured to match a second harmonic input signal using a harmonic control circuit of an input stage to maximize an efficiency and an output power, a die cell configured to receive and amplify an output signal of the input boosting circuit, and an output boosting circuit configured to receive an output signal of the die cell and to match a second harmonic output signal of the output signal of the die cell using a harmonic control circuit of an output stage to maximize the efficiency and the output power. | 01-08-2015 |
20150326190 | Radio Frequency Power Amplifier Non-Linearity Compensation - There is provided compensation for non-linear effects caused by a radio frequency power amplifier. An input sequence is acquired. A pre-distortion parameter is determined based on the input sequence. The pre-distortion parameter is based on a block matrix pseudo-inverse of a regression matrix comprising permutations of the input sequence. The regression matrix is decomposed into at least two block matrices based on at least one physical property of the radio frequency power amplifier. | 11-12-2015 |
20150349726 | Mutual Coupling Inductor Based Ultra-Wideband Power Amplifier And Design Method Thereof - A transformer based power amplifier introducing leakage inductance to extend a working bandwidth thereof and corresponding design methodology are provided. An ultra-wideband transformer comprises a primary coil, a secondary coil mutual coupling with the primary coil, a primary tuning capacitor coupled with the primary coil in parallel and a secondary tuning capacitor coupled with the secondary coil in parallel. By means of setting a self-inductance of the primary coil, a self-inductance of the secondary coil, a mutual coupling factor between the primary coil and the secondary coil, a capacitance value of the primary tuning capacitor, and a capacitance value of the secondary tuning capacitor, a 3 dB bandwidth of the transformer covers a first mutual resonated frequency and a second mutual resonated frequency formed by the transformer. This is also applicable to single-stage or transformer coupled multi-stage amplifier design, and to multi-coil coupled implementations, such as transformer-based power combiner power amplifiers. | 12-03-2015 |
20150381121 | INTEGRATED PASSIVE DEVICE ASSEMBLIES FOR RF AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF - An embodiment of an integrated passive device (IPD) assembly includes a first capacitor formed over a semiconductor substrate, where the first capacitor includes a first capacitor electrode, a second capacitor electrode, and dielectric material that electrically insulates the first capacitor electrode from the second capacitor electrode. The IPD assembly also includes a first contact pad exposed at a top surface of the IPD assembly and electrically coupled to the second capacitor electrode, and a second contact pad exposed at the top surface of the IPD. A second capacitor is coupled to the top surface of the IPD, and includes a first terminal electrically coupled to the first contact pad, and a second terminal electrically coupled to the second contact pad. The IPD assembly may be included in a packaged RF device, forming portions of an output impedance matching circuit and an envelope frequency termination circuit. | 12-31-2015 |
20160087586 | PACKAGED RF AMPLIFIER DEVICES AND METHODS OF MANUFACTURE THEREOF - An embodiment of a packaged radio frequency (RF) device includes a device substrate with a voltage reference plane, a first input lead coupled to the device substrate, a first output lead coupled to the device substrate, a first transistor die coupled to a top surface of the device substrate with a solder bond, a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane, and non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead. | 03-24-2016 |
20160094190 | AUTOMATIC IMPEDANCE MATCHING USING TRUE POWER INFORMATION - Aspects of this disclosure relate to systems and methods of performing dynamic impedance tuning. Certain aspects may be performed by or include a dynamic impedance matching network. The dynamic impedance matching network can determine a desired output power for a power amplifier, true power information for the power amplifier, and an output power delivered to a load by the power amplifier. In addition, the dynamic impedance matching network can determine whether the output power satisfies the true power information. Responsive to this determination, the dynamic impedance matching network may modify a load line impedance for the power amplifier using an impedance tuning network. | 03-31-2016 |
20160126905 | BROADBAND RADIO FREQUENCY POWER AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF - An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output. | 05-05-2016 |
20160142013 | SUPPLY MODULATION FOR RADIO FREQUENCY POWER AMPLIFICATION - The subject matter described herein relates to supply modulation for power amplification. In one embodiment, the voltage level of the envelope with a tunable threshold voltage. The high level part of the envelope above the threshold voltage is maintained and amplified, for example, by the linear amplification process. On the other hand, the low level part of the envelope is replaced with the constant low voltage level. In amplification, the shaped low level part can be prompted to the predefined low supply voltage which may be directly output to the RFPA. By eliminating complicated amplification process on the lower level part of the envelope, the efficiency and bandwidth of the supply modulation can be improved and the circuitry can be simplified, without introducing any timing mismatch or delays. | 05-19-2016 |
20160164465 | BUFFER CIRCUIT CAPABLE OF IMPROVING AMPLIFICATION PERFORMANCE - A buffer circuit may include an amplification reference voltage generation unit and an amplification unit. The amplification reference voltage generation unit may generate an amplification reference voltage. The amplification reference voltage generation unit configured to change a level of the amplification reference voltage based on a level of an output signal. The amplification unit may generate the output signal by differentially amplifying an input signal and the amplification reference voltage. | 06-09-2016 |
20160164476 | AMPLIFIER WITH TRIPLE-COUPLED INDUCTORS - An apparatus includes an amplifier and a first inductor coupled to an input of the amplifier. The apparatus also includes a second inductor that is inductively coupled to the first inductor and that couples the amplifier to a first supply node. The apparatus further includes a third inductor that is inductively coupled to the first inductor and to the second inductor and that couples the amplifier to a second supply node. | 06-09-2016 |