Class / Patent application number | Description | Number of patent applications / Date published |
327566000 | Having field-effect transistor device | 35 |
20080231354 | Semiconductor Device - The invention provides a semiconductor device that power is stabilized by suppressing power consumption as much as possible. The semiconductor device of the invention includes a logic portion and a memory portion each including a plurality of transistors, a detecting portion for detecting one or both of operation frequencies of the logic portion and the memory portion, a Vth control for supplying a Vth control signal to one or both of the logic portion and the memory portion, and an antenna. Each of the plurality of transistors has a first gate electrode which is input with a logic signal, a second gate electrode which is input with the Vth control signal, and a semiconductor film such that the second gate electrode, the semiconductor film, and the first gate electrode are provided in this order from the bottom. | 09-25-2008 |
20080265985 | Signal Processing Circuit Comprising Ion Sensitive Field Effect Transistor and Method of Monitoring a Property of a Fluid - A signal processing circuit comprising one or more ion sensitive field effect transistors, ISFETs, and a biasing circuit for biasing the or each ion sensitive field effect transistor to operate in the weak inversion region. | 10-30-2008 |
20090021299 | Semiconductor Device and Display Device Utilizing the Same - A source-drain voltage of one of two transistors connected in series becomes quite small in a set operation (write signal), thus the set operation is performed to the other transistor. In an output operation, two transistors operate as a multi-gate transistor, therefore, a current value can be small in the output operation. In other words, a current can be large in the set operation. Therefore, the set operation can be performed rapidly without being easily influenced by an intersection capacitance and a wiring resistance which are parasitic on a wiring and the like. Further, an influence of variations between adjacent ones can be small as one same transistor is used in the set operation and the output operation. | 01-22-2009 |
20090140800 | INTEGRATED CIRCUIT WITH SIGNAL BUS FORMED BY CELL ABUTMENT OF LOGIC CELLS - An integrated circuit with a signal bus formed by the cell abutment of logic cells. The integrated circuit comprises at least two logic cells. The signal bus is formed by cell abutment of the at least two logic cells. The signal bus is configured to receive a signal and to distribute the signal to each of the at least two logic cells. | 06-04-2009 |
20090237154 | SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC EQUIPMENT - The semiconductor device of the present invention has a circuit block in which m (m is an integer of not smaller than two) sets of first through m-th transistor columns where two or more transistors are connected in series, one terminal of the first through m-th transistor columns is connected to a first output node, and the other terminal of the first through m-th transistor columns is connected to a second output node. A control signal for substantially simultaneously turning on and off all the transistors of the first through m-th transistor columns is inputted to the control input terminals of the transistors of the first through m-th transistor columns. | 09-24-2009 |
20090273393 | SUBSTRATE STRESS MEASURING TECHNIQUE - A system, including: a first current mirror having a first current, formed of multiple devices disposed on a substrate, where, when a stress is present, a behavior of a device of the multiple devices forming the first current mirror depends on a direction in which the device of the multiple devices forming the first current mirror is disposed on the substrate; a second current mirror having a second current, formed of multiple devices disposed on the substrate, where, when the stress is present, a behavior of a device of the multiple devices forming the second current mirror depends on a direction in which the device of the multiple devices forming the second current mirror is disposed on the substrate; and a device for measuring a ratio of a difference between the first current and the second current to a sum of the first current and the second current. | 11-05-2009 |
20100001790 | SEMICONDUCTOR DEVICE - In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved. | 01-07-2010 |
20100188144 | Semiconductor integrated circuit, method for driving semiconductor integrated circuit, method for driving electronic apparatus, display device, and electronic apparatus - The present invention provides a semiconductor integrated circuit capable of achieving high voltage. The proposed semiconductor integrated circuit includes a first node [VOUT] connected to a first potential node [VDD], and a first n-channel transistor [NT | 07-29-2010 |
20100194470 | Integrated Circuit Package - An integrated circuit package includes a digital logic die disposed on a substrate; and an interposer die stacked vertically with the digital logic die on the substrate. The interposer die includes at least one vertical transistor configured to selectively provide electrical power to a portion of the digital logic die. | 08-05-2010 |
20100295607 | SYSTEM AND METHOD TO REDUCE NOISE IN A SUBSTRATE - A system for reducing noise in a chip is disclosed and may include a substrate, a first well disposed on top of the substrate, a second well and a third well that are both disposed within the first well, a first transistor disposed in the second well, a positive potential of a voltage source connected to a body of the first transistor, and a second transistor disposed in the third well. The first transistor is a PMOS transistor, and the second transistor is an NMOS transistor. A noisy voltage source may be coupled to a source of the first transistor. A body of the first transistor may be resistively coupled to the second well. The system may include a noisy voltage source, where a body and a source of the second transistor are both coupled to the noisy voltage source. | 11-25-2010 |
20100301929 | Power Switching Devices Having Controllable Surge Current Capabilities - Semiconductor switching devices include a wide band-gap power transistor, a wide band-gap surge current transistor that coupled in parallel to the power transistor, and a wide hand-gap driver transistor that is configured to drive the surge current transistor. Substantially all of the on-state output current of the semiconductor switching device flows through the channel of the power transistor when a drain-source voltage of the power transistor is within a first voltage range, which range may correspond, for example, to the drain-source voltages expected during normal operation. In contrast, the semiconductor switching device is further configured so that in the on-state the output current flows through both the surge current transistor and the channel of the power transistor when the drain-source voltage of the power transistor is within a second, higher voltage range. | 12-02-2010 |
20100308905 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT - In the present invention, a decoupling capacitance circuit, a first output terminal and a second output terminal are provided. The decoupling capacitance circuit comprises a TDDB control circuit consisting of a first Tr and a second Tr, and a third Tr. Conductivity types of the first and second Trs are different from each other. A source of the first Tr is connected to a first power supply wiring, and a drain of the first Tr is connected to a gate of the second Tr. A source of the second Tr is connected to a second power supply wiring, and a drain of the second Tr is connected to a gate of the first Tr. The third and first Trs have the same conductivity type. A source and a drain of the third Tr are connected to the first power supply wiring, and a gate of the third Tr is connected to the drain of the second Tr. The first output terminal is connected to the drain of the first Tr, and the second output terminal is connected to the drain of the second Tr. | 12-09-2010 |
20110063023 | STRUCTURE AND METHOD FOR COUPLING SIGNALS TO AND/OR FROM STACKED SEMICONDUCTOR DIES - Signals are coupled to and from stacked semiconductor dies through first and second sets of external terminals. The external terminals in the second set are connected to respective conductive paths extending through each of the dies. Signals are coupled to and from the first die through the first set of external terminals. Signals are also coupled to and from the second die through the conductive paths in the first die and the second set of external terminals. The external terminals in first and second sets of each of a plurality of pairs are connected to an electrical circuit through respective multiplexers. The multiplexers in each of the dies are controlled by respective control circuits that sense whether a die in the first set is active. The multiplexers connect the external terminals in either the first set or the second set depending on whether the bonding pad in the first set is active. | 03-17-2011 |
20110080212 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - To provide a semiconductor device which operates stably with few malfunctions due to noise, with low power consumption, and little variation in characteristics; a display device including the semiconductor device; and an electronic device including the display device. An output terminal is connected to a power supply line, thereby reducing variation in electric potential of the output terminal. In addition, a gate electrode potential which turns ON a transistor is maintained due to the capacitance of the transistor. Further, change in characteristics of the transistor is reduced by a signal line for reverse bias. | 04-07-2011 |
20110128073 | SEMICONDUCTOR INTEGRATED CIRCUIT - According to one embodiment, a semiconductor integrated circuit includes first to six transistors and a constant current source circuit. The first and second transistors form a current mirror circuit connected to a first power source node. The third and fourth transistors form a differential pair circuit. The third and fourth transistors receive first and second external signals at their gates, respectively. The constant current source circuit has one end connected to source terminals of the third and fourth transistors, and the other end connected to a second power source node. The fifth and sixth transistors form a current pathway between a common gate node of the first and second transistors and the constant current source circuit. The gate of fifth transistor is connected to a signal output node. The gate of sixth transistor receives a signal of logic opposite to a signal to be obtained at the signal output node. | 06-02-2011 |
20110133828 | Semiconductor Device - A semiconductor device is provided in which a transistor which supplies a current to a load (an EL pixel and a signal line) can supply an accurate current without being affected by a variation. A voltage of each terminal of a transistor is controlled by using a feedback circuit using an amplifier circuit. A current Idata is inputted from a current source circuit to a transistor and a gate-source voltage (a source potential) required for the transistor to flow the current Idata is set by using the feedback circuit. The feedback circuit is controlled to operate so that a drain potential of the transistor becomes a predetermined potential. Then, a gate voltage required to flow the current Idata is set. By using the set transistor, an accurate current can be supplied to the load (an EL element and a signal line). As a drain potential can be controlled, the kink effect can be reduced. | 06-09-2011 |
20110156810 | INTEGRATED DMOS AND SCHOTTKY - Embodiments relate generally to voltage converter structures including a diffused metal oxide semiconductor (DMOS) field effect transistors (FET). Embodiments include the combination of DMOS devices (e.g., FETs with isolated bodies from the substrate) with Schottky diodes on a single semiconductor die. The Schottky diode can be integrated into a cell of a DMOS device by forming an N-type area in the P-body region of the DMOS device. | 06-30-2011 |
20110193622 | PULSE OUTPUT CIRCUIT, SHIFT REGISTER, AND DISPLAY DEVICE - An object is to suppress change of a threshold voltage of a transistor in a shift register and to prevent the transistor from malfunctioning during a non-selection period. A pulse output circuit provided in the shift register regularly supplies a potential to a gate electrode of a transistor which is in a floating state so that the gate electrode is turned on during a non-selection period when a pulse is not outputted. In addition, supply of a potential to the gate electrode of the transistor is performed by turning on or off another transistor regularly. | 08-11-2011 |
20110204968 | DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT - An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received. | 08-25-2011 |
20110298533 | SEMICONDUCTOR DEVICE HAVING A BIAS RESISTOR CIRCUIT - According to one embodiment, a semiconductor device provided with an input terminal and a resistor circuit is presented. The resistor circuit is provided with first and second transistors, a first resistor, a capacitor and a capacitor. A drain of the first transistor is connected to the input terminal. One end of the first resistor is connected to a gate of the first transistor. A drain of the second transistor is connected to a source of the first transistor. A gate of the second transistor is connected to the other end of the first resistor. A source of the second transistor is connected to a power supply of a source side. The capacitor is connected between the drain and the gate of the first transistor. The voltage supply circuit is connected to the other end of the first resistor and the gate of the second transistor. | 12-08-2011 |
20120056668 | HIGH-IMPEDANCE NETWORK - Apparatus and methods for an integrated circuit, high-impedance network are provided. In an example, the network can include an anti-parallel diode pair coupled between first and second nodes. The anti-parallel diode pair can include a first diode including a P+/N | 03-08-2012 |
20120092066 | INTEGRATED CIRCUITS AND OPERATING METHODS THEREOF - An integrated circuit includes a first pass gate and a first receiver electrically coupled with the first pass gate. The first receiver includes a first N-type transistor. A first gate of the first N-type transistor is electrically coupled with the first pass gate. A first P-type bulk of the first N-type transistor is surrounded by a first N-type doped region. The first N-type doped region is surrounded by a first N-type well. The first N-type doped region has a dopant concentration higher than that of the first N-type well. | 04-19-2012 |
20120176193 | DRIVER FOR A SEMICONDUCTOR CHIP - A driver for a semiconductor chip, the driver having a drain wire with a first end and a second end and p and n-type transistors each with a source, gate and drain. The source of the p-type transistors connected to a positive power supply line, the source of the n-type transistors connected to a ground power supply line. The gates of the p and n-type transistors connected to a first and second input signals respectively. The drains of the p and n-type transistors connected to the drain wire. The p and n-type transistors arranged so that a difference between a number of n-type transistors connected to the drain wire and a number of p-type transistors connected to the drain wire between the first end of the drain wire and all distances along the drain wire being less than two. | 07-12-2012 |
20120306570 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit according to an embodiment includes a transfer transistor including a first gate electrode, the first gate electrode and a diffusion layer being diode-connected with a first wiring, and a clock signal line to which a clock signal is supplied, at least a portion of a first partial clock signal line, which is a portion of the clock signal line, being formed above the first gate electrode. | 12-06-2012 |
20130049852 | MOFSET MISMATCH CHARACTERIZATION CIRCUIT - A semiconductor device comprising a first inverter circuit including a first PMOS transistor and a first NMOS transistor, a drain electrode of the first PMOS transistor coupled to a drain electrode of the first NMOS transistor, and a second inverter circuit including a second PMOS transistor and a second NMOS transistor, a drain electrode of the second PMOS transistor coupled to a drain electrode of the second NMOS transistor. A first output voltage pad coupled to gate electrodes of the first and second PMOS and NMOS transistors, and between the drain electrode of the first PMOS transistor and the drain electrode of the NMOS transistor to self-bias the first inverter circuit. A second output voltage pad coupled between the drain electrode of the second PMOS transistor and the drain electrode of the second NMOS transistor. | 02-28-2013 |
20130093508 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region. | 04-18-2013 |
20130099856 | Methods and Circuits for Achieving Rational Fractional Drive Currents in Circuits Employing FinFET Devices - Disclosed herein are various methods and circuits for achieving rational fractional drive strengths in circuits employing FinFET devices. In one example, the device disclosed herein includes a semiconducting substrate, a first plurality of FinFET transistors formed in and above the substrate, wherein each of the first plurality of FinFET transistors is adapted to produce an individual drive current, and wherein the first plurality of FinFET transistors are configured in a series circuit. The drive current resulting from the series circuit is a rational fraction of the individual drive current. | 04-25-2013 |
20130106504 | INTEGRATED CIRCUITS WITH CASCODE TRANSISTOR | 05-02-2013 |
20140070880 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which change in characteristics of a transistor is suppressed and an output signal is changed sharply without increasing W/L of the transistor can be provided. Two transistors are connected in parallel between a wiring to which a low potential is supplied and an output terminal. When the low potential is output from the output terminal, both of the two transistors are turned on and then one of them is turned off. Thus, change in characteristics of the transistor can be suppressed and an output signal can be changed sharply without increasing W/L of the transistor. | 03-13-2014 |
20140184322 | THROUGH SILICON VIA REPAIR CIRCUIT - A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal. | 07-03-2014 |
20150091641 | Integrated Circuit with a Power Transistor and a Driver Circuit Integrated in a Common Semiconductor Body - An integrated circuit includes a power transistor and a drive circuit. The drive circuit includes at least one drive transistor. The power transistor and the at least one drive transistor are integrated in a common semiconductor body. The power transistor includes at least one transistor cell with a source region, a body region, a drift region, a drain region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The at least one drive transistor includes active device regions integrated in a well-like structure comprising dielectric sidewall layers. | 04-02-2015 |
20150123730 | INTEGRATED CIRCUIT - An integrated circuit is provided. A standard cell includes a plurality of PMOS transistors and a plurality of NMOS transistors. The PMOS transistors are disposed in a first row and a second row in the semiconductor substrate. The NMOS transistors are disposed in a third row in the semiconductor substrate. The third row is adjacent to the first and second rows and arranged between the first and second rows. | 05-07-2015 |
20150340354 | SEMICONDUCTOR INTEGRATED CIRCUIT - Disclosed herein is a semiconductor integrated circuit including: a cell layout region including circuit cells subject to power control the supply and interruption of power to which is controlled by a power switch, and always-on circuit cell groups which are always powered after the activation; a main line laid out in the cell layout region and applied with a source or reference voltage; and first and second branch lines which branch from the main line in the cell layout region. | 11-26-2015 |
20160005687 | RADIO FREQUENCY POWER DEVICE - An electronic RF power device includes a transistor chip, a device input terminal and a device output terminal. Further, the electronic RF power device includes an output impedance transformation circuit, an output contact clip bonded to the transistor chip and to the output device terminal and at least one bond wire bonded to the output impedance transformation circuit and to the transistor chip. | 01-07-2016 |
20160134282 | MULTI-ORIENTATION INTEGRATED CELL, IN PARTICULAR INPUT/OUTPUT CELL OF AN INTEGRATED CIRCUIT - An integrated circuit includes at least one integrated cell disposed at a location of the integrated circuit. The at least one integrated cell may have two integrated devices coupled to at least one site of the integrated cell and a multiplexer, and the two integrated devices respectively oriented in two different directions of orientation. A first integrated device of the two integrated devices that is oriented in one of the two directions of orientation is usable. The integrated circuit may include a controller configured to detect the direction of orientation which, having regard to the disposition of the integrated cell at the location, may allow the first integrated device to be usable, and to control the multiplexer to couple the first integrated device electrically to the at least one site. | 05-12-2016 |