Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Stabilized (e.g., compensated, regulated, maintained, etc.)

Subclass of:

327 - Miscellaneous active electrical nonlinear devices, circuits, and systems

327524000 - SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM

327530000 - With specific source of supply or bias voltage

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
327540000 With voltage source regulating 163
327543000 Using field-effect transistor 130
327539000 Using bandgap 70
327542000 With diverse type transistor devices 4
20090243713REFERENCE VOLTAGE CIRCUIT - A reference voltage circuit which is less dependent on semiconductor process variations compared to bandgap based reference voltage circuits. The circuit comprises a first amplifier having an inverting input, a non-inverting input and an output. A current biasing circuit provides first and second PTAT currents, and a CTAT current. The CTAT current is equal in value to the second PTAT at a first predetermined temperature and opposite in polarity. A first load element is coupled to the non-inverting input of the first amplifier and arranged for receiving the first PTAT current such that a PTAT voltage is developed across the first load element. A feedback load element is coupled between the inverting input and the output of the amplifier for receiving the summation of the CTAT current and the second PTAT current. The feedback load element is such that at a second predetermined temperature the voltage at the output of the amplifier is substantially equal to the voltage at the output of the amplifier at the first temperature.10-01-2009
20100079200PROCESS/DESIGN METHODOLOGY TO ENABLE HIGH PERFORMANCE LOGIC AND ANALOG CIRCUITS USING A SINGLE PROCESS - A method for improving analog circuits performance using a circuit design using forward bias and a modified mixed-signal process is presented. A circuit consisting plurality of NMOS and PMOS transistors is defined. The body terminal of the NMOS transistors are coupled to a first voltage source and the body terminal of the PMOS transistors are coupled a second voltage source. Transistors in the circuit are selectively biased by applying the first voltage source to the body terminal of each selected NMOS transistor and applying the second voltage source to the body terminal of each selected PMOS transistor. In one embodiment, the first voltage source and the second voltage source are modifiable to provide forward and reverse bias to the body terminal of the transistors.04-01-2010
20100164609CIRCUIT FOR GENERATING REFERENCE VOLTAGE - A reference voltage generating circuit includes a reference voltage generating unit generating a uniform reference voltage in response to a bias voltage, a bias voltage generating unit generating the bias voltage, and a start-up circuit, after activating the bias voltage generating unit by receiving a first supply voltage, canceling a change of the first supply voltage to maintain a separation from the bias voltage generating unit. The circuit adopts a start-up circuit having a voltage distributing unit, thereby preventing a quiescent point of a bias voltage generating unit from entering a zero state and prevents a reference voltage from rising in a power-up state that an analog supply voltage rises according to a change of an external design environment such as a power, a temperature, a process parameter and the like, thereby generating a reference voltage more stably. As a result, current consumption and power consumption are minimized.07-01-2010
20110304387CURRENT MIRROR CIRCUIT - In one embodiment, a current mirror circuit includes first to fourth insulated gate field effect transistors (FETs), and a bias circuit. The gate electrodes of the first and second FETs are connected to each other. The source electrode of the third FET is connected to the drain electrode of the first FET, and the drain electrode of the third FET is connected to the gate electrodes of the first and second FETs and a current input terminal. The gate electrode of the fourth FET is connected to the gate electrode of the third FET, the source electrode of the fourth FET is connected to the drain electrode of the second FET, and the drain electrode of the fourth FET becomes a current output terminal. The bias circuit is configured to provide a bias voltage to the gate electrodes of the third and fourth FETs.12-15-2011
Entries
DocumentTitleDate
20130043935POWER BOOSTING CIRCUIT FOR SEMICONDUCTOR PACKAGING - A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to the microelectronic element.02-21-2013
20130043936Method And Apparatus For Controlling Power Supply - A method for controlling the power supply of an integrated circuit, the power supply comprising a power supply unit powered by a main voltage and possessing several transistor groups, comprising turning on in succession at least two transistor groups in order to deliver, as an output from each group, to at least one part of the integrated circuit, an elementary supply voltage derived from the main voltage, characterized in that the method comprises at least one elementary power phase for supplying power to said at least one part of the integrated circuit, wherein the phase comprises defining voltage thresholds respectively associated with the transistor groups, turning on a first transistor group, the first group delivering a first elementary supply voltage and turning on at least one second group when the first elementary supply voltage is higher than or equal to the voltage threshold associated with the second group.02-21-2013
20100156518Dynamic Charge Pump System for Front End Protection Circuit - Various apparatuses, methods and systems for a front end protection circuit with a dynamic charge pump system are disclosed herein. For example, some embodiments provide an apparatus such as a voltage regulator, a current regulator, a driver circuit or a switch protection circuit. The apparatus includes an output switch, a switch controller and a voltage threshold detector. The apparatus operates in a reduced power mode when the threshold detector detects a feedback level passing a threshold. In some particular embodiments, the switch controller includes a charge pump and an oscillator that run at lower speeds to reduce power usage when the feedback level passes the threshold. In various embodiments, the feedback level is a voltage level at the output switch control input, the output voltage from the output switch, or the output current from the output switch.06-24-2010
20090066409BIAS CIRCUIT AND VOLTAGE-CONTROLLED OSCILLATOR - A bias circuit and a voltage-controlled oscillator (VCO) thereof suitable for improving the stability of the bias circuit are provided. The bias circuit includes: an error amplifier circuit, having an inverting input terminal connected to a reference voltage; a voltage-controlled current source, having a voltage control terminal connected to a voltage output terminal of the error amplifier circuit, in which a current generated by the current source is controlled by a voltage at the voltage output terminal of the error amplifier circuit; a delay control circuit, having a current input terminal connected to the voltage-controlled current source, an output terminal connected to a non-inverting input terminal of the error amplifier circuit, and a voltage input terminal connected to a supply terminal of the control voltage, and the delay control circuit is adapted to adjust an output voltage of the delay control circuit according to a control voltage.03-12-2009
20100085114HIGH-VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE PROVIDED THEREWITH AND SEMICONDUCTOR INTEGRATED DEVICE - A voltage generation circuit includes a pump circuit, a first unit, a first switch, and a first capacitor. The pump circuit generates a first voltage and outputs the first voltage to a first node. The first unit includes a first resistance unit to output a second voltage at a second node. The first switch connects the second node and an output terminal. A resistance value of a parasitic resistance formed in an interconnection from the second node to the output terminal is smaller than a resistance value of the first resistance unit. The first capacitor includes one of electrodes and the other electrodes. The one of electrodes is connected to an interconnection connecting the second node and the first switch element. The other of the electrodes is grounded. A capacitance of the first capacitor element is larger than a capacitance connected to the output terminal.04-08-2010
20110193620Reference Voltage Generator for Single-Ended Communication Systems - An improved reference voltage (Vref) generator for a single-ended receiver in a communication system is disclosed. The Vref generator in one example comprises a cascoded current source for providing a current, I, to a resistor, Rb, to produce the Vref voltage (I*Rb). Because the current source isolates Vref from a first of two power supplies, Vref will vary only with the second power supply coupled to Rb. As such, the improved Vref generator is useful in systems employing signaling referenced to that second supply but having decoupled first supplies. For example, in a communication system in which the second supply (E.g. Vssq) is common to both devices, but the first supply (Vddq) is not, the disclosed Vref generator produces a value for Vref that tracks Vssq but not the first supply. This improves the sensing of Vssq-referenced signals in such a system.08-11-2011
20090121783VOLTAGE LEVEL GENERATING DEVICE - The present invention discloses a voltage level generating device. The voltage level generating device includes: a reference voltage generating module, a first circuit module, a second circuit module, and a switch module. The voltage level generating device disclosed in the present invention only requires a buffer, a voltage regulator, and a arithmetic logic unit (ALU) to attain the same function of the conventional common voltage level generating device, and thus the circuit layout area can be reduced so as to decrease the cost of the integrated circuit (IC). In addition, the voltage level generating device disclosed in the present invention also can select different output of voltage level in order to reduce the power consumption of a display device.05-14-2009
20100045366MEASURING INSTRUMENT IN TWO-CONDUCTOR TECHNOLOGY - In a two-conductor technology circuit the use of certain ASIC components is made possible which, for instance, allow for the supply of contact-free rotational angle sensors, although said ASIC components have a high current consumption.02-25-2010
20100102874SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor element including a current mirror circuit, a parasitic resistance formed at the current mirror circuit, and a connection terminal electrically connected to a part of the current mirror circuit via an electric conductor including a bonding wire, the connection terminal being configured to perform input and output relative to an outside of the semiconductor device; wherein a resistance value of the bonding wire is controlled so that a shift of an output electric current of the current mirror circuit based on the parasitic resistance is corrected.04-29-2010
20100109761SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT - A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.05-06-2010
20100109760VOLTAGE BOOSTING CIRCUIT AND SEMICONDUCTOR DEVICE - A voltage boosting circuit includes a first voltage boosting circuit configured to receive an external power supply voltage, and pump the external power supply voltage to a second boosting voltage higher than the external supply voltage in a single pumping stage, and a second voltage boosting circuit configured to receive the second boosting voltage and pump the second boosting voltage to a first boosting voltage higher than the second boosting voltage in two pumping stages.05-06-2010
20090115499Capacitance coupling effect compensating method and apparatus implemented with the method - An electronic apparatus implemented with capacitance coupling effect compensating capability is disclosed. The apparatus includes a first substrate, a common electrode, a second substrate, a coupling catch structure and a compensating circuit. The common electrode is disposed on the first substrate. The coupling catch structure is disposed on the second substrate and configured to receive a first common voltage and output a coupling catch voltage composed of a DC voltage component and a non-DC voltage component. The compensating circuit is configured to receive the coupling catch voltage and a second common voltage, and output an active common voltage applied to the common electrode. The present invention also includes a capacitance coupling effect compensating method.05-07-2009
20130069713SEMICONDUCTOR DEVICE - A microcomputer includes a first switch coupled between a main power supply terminal and a power supply node, and a second switch coupled between an auxiliary power supply terminal and the power supply node. The microcomputer compares a voltage V1 of the main power supply terminal with a reference voltage VR1. When V1>VR1, the microcomputer turns on the first switch and turns off the second switch, and when V103-21-2013
20090184755CURRENT CONTROL APPARATUS APPLIED TO TRANSISTOR - The present invention provides a current control apparatus applied to a transistor. The transistor has a control terminal, a first terminal, and a second terminal. The current control apparatus includes a current control module, a first current mirror module, a second current mirror module, a current subtractor, and a current adjusting module. The current control apparatus provided by the present invention can be applied to a bipolar junction transistor (BJT) to prevent temperature measurement errors from occurring when using a dual current mode temperature measurement method to measure the temperature of the BJT.07-23-2009
20090322415Regulated Energy Supply for a Circuit - The device (12-31-2009
20100134179CIRCUIT ARRANGEMENT INCLUDING VOLTAGE SUPPLY CIRCUIT - One embodiment of a circuit arrangement includes first and second input voltage terminals for applying an input voltage, and at least one first semiconductor switching element having a drive terminal and a load path, the load path being connected between the input voltage terminals. A drive circuit is configured to receive a supply voltage, and has a drive output connected to the drive terminal of the at least one semiconductor switching element. A free-running oscillator is configured to generate an oscillating output voltage. A voltage supply circuit is provided for receiving the oscillating output voltage or a voltage dependent on the oscillating output voltage, and for providing the supply voltage of the drive circuit.06-03-2010
20120218033INTEGRATED CIRCUIT AND METHOD FOR REDUCTION OF SUPPLY VOLTAGE CHANGES - An integrated circuit and a method. The integrated circuit includes an internal component having an output for providing a driven input signal; an output driver, connected to the internal component, for converting said driven input signal in an output signal; an output pad for outputting said output signal to a component outside the integrated circuit; a power grid configured to supply a supply voltage to the output driver; a controllable current consuming component connected to the power grid, said connectable current consuming component being controllable to consume current in accordance with a supply voltage change reduction pattern; a change detector connected to the internal component and the controllable current consuming component, for detecting a change in said driven input signal prior to said change resulting in a change in said output signal and to control said current consuming component to consume current in response to said detecting.08-30-2012
20090267683INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR DEVICE - Embodiments of the present invention are directed to provide an internal voltage generator of a semiconductor memory device for generating a predetermined stable level of an internal voltage. The semiconductor memory device includes a control signal generator, an internal voltage generator and an internal voltage compensator. The control signal generator generates a reference signal and a compensating signal which are corresponding to voltage level of the reference signal. The internal voltage generator generates an internal voltage in response to the reference signal. The internal voltage compensator compensates the internal voltage in response to the compensating signal.10-29-2009
20090027110HIGH VOLTAGE GENERATOR - A high voltage generator includes a charge pump configured to output a pumping voltage in accordance with a first clock signal and a second clock signal having a level opposed to a level of the first clock signal; a first regulator configured to stabilize the pumping voltage to a voltage having constant level, thereby outputting a first regulation voltage; and a second regulator configured to convert the first regulation voltage into a voltage having constant level, thereby outputting a second regulation voltage. Here, the first regulator increases the pumping voltage by n number so that the first regulation voltage reaches a first level, and the second regulator increases the first regulation voltage by m number so the second regulation voltage reaches a second level smaller than the first level.01-29-2009
20100085113Internal voltage generation circuit - An internal voltage generation circuit includes a signal generation unit which generates first and second level signals and first and second control signals from a reference voltage generated by voltage-dividing an internal power and generates first and second driving signals by comparing levels of the internal power and the reference voltage, a driving control unit which receives the first and second level signals and drives the internal voltage in response to an active signal, and a driving unit which receives the first and second driving signals and drives the internal voltage.04-08-2010
20130162339CURRENT COMPENSATING DEVICE - A compensating device is used for providing current compensation of an IC when operating in the high-voltage. The current compensating device includes a detecting unit, a rectifier, a filtering unit and a switching unit. The detecting unit electrically connected to an AC voltage. The rectifier is electrically connected to the detecting unit. The filtering unit is electrically connected to the rectifier. The switching unit is electrically connected to the filtering unit. The switching unit is conducted and provides a current to the IC when the AC voltage is above a predetermined voltage.06-27-2013
20120235732INTEGRATED CIRCUIT COMPRISING REFERENCE VOLTAGE GENERATION CIRCUITRY AND ELECTRONIC DEVICE - An integrated circuit comprises reference voltage generation circuitry for providing a reference voltage for use within a transmission of electrical signals. The reference voltage generation circuitry comprises a reference voltage node operably coupled via a plurality of resistance elements to a plurality of signal nodes such that the reference voltage node assumes as the reference voltage an average of the voltage values of the signal nodes to which it is coupled.09-20-2012
20130162340MULTI-CHIP PACKAGE - A multi-chip package includes a single lead and a plurality of inner package chips. Each of the plurality of inner package chips includes at least one pad circuit and an internal circuit. The pad circuit is selectively coupled to the lead and configured to provide a chip address signal corresponding to a connection state to the lead. The inner package chip receives the chip address signal to identify a corresponding inner package chip.06-27-2013
20100039169BIAS VOLTAGE GENERATION CIRCUIT AND DRIVER INTEGRATED CIRCUIT - A bias voltage generation circuit includes a data holding section, a correction value storage section, a computing circuit, a voltage dividing circuit and a selection circuit. The data holding section holds a variable n-bit data value that is set from an exterior, wherein n is a positive integer. The correction value storage section stores an n-bit correction value for correcting the n-bit data value. The computing circuit computes the n-bit data value and the n-bit correction value, and outputs an n-bit computing result. The voltage dividing circuit divides a reference voltage into 202-18-2010
20120286855SEMICONDUCTOR DEVICE - Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.11-15-2012
20100171547PSEUDO BANDGAP VOLTAGE REFERENCE CIRCUIT - A pseudo bandgap voltage reference circuit includes a first transistor and a second transistor, each coupled to a supply voltage node. The circuit also includes an amplifier circuit coupled to a gate terminal of each of the first and the second transistors, a current source coupled to the supply voltage node, and a first diode coupled between the current source and a ground reference node. A first input of the amplifier circuit is coupled to a node between the current source and the first diode. In addition, a first terminal of the first transistor is coupled to a second input of the amplifier circuit in a feedback loop. Also, an output reference voltage is developed at an output node coupled to a second terminal of the second transistor. Further, an output current of the current source is independent of a current flowing through the first terminal of the first transistor.07-08-2010
20110074494SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY TESTER - A semiconductor device, a semiconductor memory tester, and a multi-chip package are provided. The semiconductor device includes a plurality of nonvolatile semiconductor memories; a boosting circuit which generates a boosted voltage for operating the plurality of nonvolatile semiconductor memories; and a boosting circuit controller which controls the operation of the boosting circuit to generate the boosted voltage on the basis of an operation sequence of the plurality of nonvolatile semiconductor memories.03-31-2011
20100194469Power Monitoring for Optimizing Operation of a Circuit - An example method for optimizing power consumption of digital circuits using dynamic voltage and threshold scaling (DVTS) is provided. A propagation delay of a signal through a portion of the circuit is determined and if the propagation delay does not meet a specified delay requirement, then a supply voltage and/or threshold voltage of the circuit is adjusted. Subsequently, a power consumption level of the circuit is determined and compared to previous power consumption levels. The supply and/or threshold voltage of the circuit can be readjusted to enable the circuit to meet specified power consumption requirements and the specified delay requirement, for example.08-05-2010
20110291746REALTIME POWER MANAGEMENT OF INTEGRATED CIRCUITS - An integrated circuit comprising a plurality of functional blocks, each functional block being operative to cause one or more power consuming events, each power consuming event being associated with a respective weight. The integrated circuit also comprises at least one accumulation block for monitoring the functional blocks over a time window and generating a weighted count of the number of occurrences of each power consuming event within the time window; and a power calculation module for calculating a runtime power consumption estimate over the time window using the weighted count. The weighted count may comprise a sum of products of each one of the power consuming events by its respective weight. Calculating the runtime power consumption estimate may comprise averaging the weighted count over the time window to generate a dynamic power estimate, calculating a leakage power estimate over the time window, and summing the dynamic power estimate with the leakage power estimate. The integrated circuit may further comprise a power management module for adapting power consumption of the integrated circuit based on a comparison of the runtime power consumption estimate with one or more predetermined thresholds.12-01-2011
20110267139AUTOMATIC LEVEL CONTROL - Some embodiments regard a circuit comprising: a high voltage transistor providing a resistance; an amplifier configured to receive a current and to convert the current to a first voltage that is used in a loop creating the current; and an automatic level control circuit that, based on an AC amplitude of the first voltage, adjusts a second voltage at a gate of the high voltage transistor and thereby adjusts the resistance and the first voltage; wherein the automatic level control circuit is configured to adjust the first voltage toward the first reference voltage if the first voltage differs from a first reference voltage.11-03-2011
20100026377CIRCUIT AND METHOD FOR PROVIDING A DESIRED VOLTAGE DIFFERENCE, CIRCUIT AND METHOD FOR DETECTING, WHETHER A VOLTAGE DIFFERENCE BETWEEN TWO VOLTAGES IS BELOW A DESIRED VOLTAGE DIFFERENCE, AND PROTECTION CIRCUIT - A circuit for providing a desired voltage difference in dependence on a reference signal, the circuit including a first resistor; a second resistor; a regulation circuit configured to regulate a current flowing through the first resistor, such that a voltage difference across the first resistor is determined by the reference signal; and a current mirror, wherein the current mirror is configured to mirror the current flowing through the first resistor to obtain a mirrored current flowing through the second resistor, such that the desired voltage difference is obtained across the second resistor.02-04-2010
20110063020ON-BOARD PERFORMANCE MONITOR AND POWER CONTROL SYSTEM - A system and method for controlling performance and/or power based on monitored performance characteristics. Various aspects of the present invention may comprise an integrated circuit comprising a first circuit module that receives electrical power. A second circuit module may monitor one or more performance characteristics of the first circuit module and/or the integrated circuit. A third circuit module may, for example, determine power control information based at least in part on the monitored performance characteristic(s). The power control information may be communicated to power supply circuitry to control various characteristics of the electrical power. Various aspects of the present invention may also comprise an integrated circuit comprising a first module that monitors at least one performance characteristic of a first electrical device. The integrated circuit may also comprise modules that determine power control information based on the monitored performance characteristic(s) and communicate such power control information to power supply circuitry.03-17-2011
20090295465ALL NPN-TRANSISTOR PTAT CURRENT SOURCE - The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available. For example, the PTAT current source circuit of the invention can be used in radio frequency power amplifiers, in radio frequency tag circuits, in a satellite microwave front-end.12-03-2009
20090206918SEMICONDUCTOR DEVICE AND CELL PLATE VOLTAGE GENERATING APPARATUS THEREOF - A semiconductor device includes a monitor voltage transfer unit and a voltage generating unit. The monitor voltage transfer unit selects one of a plurality of internal voltages including a cell plate voltage in accordance with a test mode to output it to a voltage monitor pad or outputs an external voltage supplied from the voltage monitor pad as a first pre cell plate voltage. The voltage generating unit generates the cell plate voltage using any one of the first pre cell plate voltage and a second pre cell plate voltage generated within itself in accordance with the test mode. The semiconductor device can generate a pre cell plate voltage at the desired level.08-20-2009
20100123513INTERGRATED CIRCUIT FOR GENERATING INTERNAL VOLTAGE - An integrated circuit includes a driver configured to provide an internal voltage by driving an internal voltage node with an external voltage, a controller configured to output a control signal, and a discharger configured to discharge leakage current flowing into the internal voltage node through the driver in response to the control signal.05-20-2010
20110199152INTEGRATED CIRCUITS INCLUDING A CHARGE PUMP CIRCUIT AND OPERATING METHODS THEREOF - An integrated circuit includes a first current source. A second current source is electrically coupled with the first current source via a conductive line. A switch circuit is coupled between the first current source and the second current source. A first circuit is coupled between a first node and a second node. The first node is disposed between the first current source and the switch circuit. The second node is coupled with the first current source. The first circuit is configured for substantially equalizing voltages on the first node and the second node. A second circuit is coupled between a third node and a fourth node. The third node is disposed between the second current source and the switch circuit. The fourth node is disposed coupled with the second current source. The second circuit is configured for substantially equalizing voltages on the third node and the fourth node.08-18-2011
20090153234CURRENT MIRROR DEVICE AND METHOD - In an embodiment, a circuit is disclosed that includes a current mirror including a first transistor pair and a second transistor pair. The first transistor pair includes a first transistor and a second transistor. The second transistor pair includes cascode transistors. The circuit also includes an operational amplifier having an output coupled to both the first transistor and the second transistor.06-18-2009
20090115500VOLTAGE GENERATING CIRCUIT - A voltage generating circuit for outputting a voltage from an output terminal, has a first voltage dividing circuit which is connected between the output terminal and ground; a switch circuit connected between the output terminal and the first voltage dividing circuit; a first voltage detecting circuit which outputs a first pumping signal corresponding to a comparison result; a second voltage dividing circuit which is connected between the output terminal and the ground; a second voltage detecting circuit which outputs a second pumping signal corresponding to a comparison result; a pump circuit that outputs a voltage boosted from a power supply voltage; and a boost circuit which has a capacitive element having one end connected to the voltage dividing resistor of the first voltage dividing circuit.05-07-2009
20090115501Power consumption reduction of a power supply - A power supply includes a first switch to establish a first path to charge an output of the power supply by a voltage source, a second switch to establish a second path to discharge the output, and a third switch connected between the output and a capacitor. When to discharge the output, the third switch is turned on before the second switch turns on, to transfer a portion of energy on the output to the capacitor. When to charge the output, the third switch is turned on before the first switch turns on, to transfer a portion of the energy on the capacitor to the output.05-07-2009
20120194264CURRENT MIRROR AND CURRENT CANCELLATION CIRCUIT - Techniques are described to mirror currents and subtract currents accurately. In an implementation, a circuit includes a first current source coupled to a first node to provide a current IPD08-02-2012
20100102873Output Driving Circuit for an Ethernet Transceiver - An output driving circuit for an Ethernet transceiver is utilized for driving a load, which includes a first loading end and a second loading end. The output driving circuit includes a voltage output driver, a first resistor, a second resistor, a first current source, a second current source, a third current source and a fourth current source. The voltage output driver is utilized for providing an output voltage. The first resistor and the second resistor are utilized for modifying impedance matching with the load. When the output voltage is positive, the first current source and the second current source are turned-on, and the third current source and the fourth current source are turned-off. Whereas when the output voltage is negative, the first current source and the second current source are turned-off, and the third current source and the fourth current source are turned-on.04-29-2010
20090027111 ALTERNATING CURRENT LEVEL DETECTION CIRCUIT - A detection circuit includes a current source with no temperature coefficient; a current generation circuit that generates a VBE proportional reference current from the current source with no temperature coefficient; a current mirror circuit that returns an output current of the current generation circuit; a reference voltage generation circuit that generates a VBE proportional voltage with a negative temperature coefficient on the basis of the current returned by the current mirror circuit so that the VBE proportional voltage is used as a reference voltage of a comparator; and a full-wave rectifying means, having a differential pair and a rectifier circuit, using the current source with no temperature coefficient, having an alternating current signal supplied as an input signal, for generating a direct current voltage with a negative coefficient on the basis of a voltage obtained by full-wave rectifying the alternating current signal, and for using the generated voltage as a comparative voltage of the comparator.01-29-2009
20080278223APPARATUS AND METHOD FOR CONTROLLING THE PROPAGATION DELAY OF A CIRCUIT BY CONTROLLING THE VOLTAGE APPLIED TO THE CIRCUIT - The voltage applied to an integrated circuit is controlled by a temporal process monitor formed as part of the integrated circuit. The temporal process monitor includes a voltage controlled oscillator for producing a first output signal having a first period. A comparator compares the first period to one or more reference values. Should the first period be greater than a first selected reference value the comparator sends a signal to increase the voltage being supplied to the integrated circuit. Should the first period be less than a second selected reference value, the comparator sends a signal to decrease the voltage applied to the integrated circuit. In some embodiments a scaling circuit is provided for producing a second output signal having a second period different from (typically but not necessarily longer than) the first period. By placing the temporal process monitor on an integrated circuit chip, process variations and environmental factors which affect the performance of the integrated circuit can be automatically compensated so that the integrated circuit performs within specifications. Two or more temporal process monitors can be placed on a single integrated circuit chip or on different integrated circuit chips and the longest period produced by the temporal process monitors can be used to control the voltage supplied to all the sections of the integrated circuit chip associated with the temporal process monitors or to all the integrated circuit chips associated with the temporal process monitors. In some embodiments voltages related to the frequency of a temporal process monitor signal and the frequency of a fixed frequency clock are provided to an error amplifier, which changes the voltage applied to the integrated circuit such that the two frequencies are the same.11-13-2008
20080284501REFERENCE BIAS CIRCUIT FOR COMPENSATING FOR PROCESS VARIATION - A reference bias circuit is provided. The reference bias circuit includes a voltage detector, an operational amplifier, a compensation circuit, and a reference current generator. The voltage detector detects a first input voltage and a second input voltage of the operational amplifier based on a voltage of a first node and a voltage of a second node. The voltage of the first and second nodes varies with temperature, which changes the first input voltage and the second input voltage and thus changes the output voltage of the operational amplifier. The compensation circuit compensates for the variation of the voltage of the first and second nodes caused by temperature and/or process variation, thereby preventing the variation of a reference current generated by the reference current generator based on the output voltage of the operational amplifier.11-20-2008
20080284500LOAD-DRIVE CONTROLLER - In a load-drive controller, a first comparing unit compares a load current supplied from an H bridge circuit and a desired setting current; a PWM control unit generates a control signal to control the load current; a gate driver drives and controls output transistors of the H bridge circuit based on the control signal, and a load current monitoring unit determines which is larger a level shift equivalent value of the setting current or a peak hold equivalent value of the load current, and the PWM control unit controls increase or decrease of the load current based on a comparison result of the first comparing unit and on a determination result of the load current monitoring unit, so that the load current quickly reaches the setting current of a micro step drive during decrease of the setting current.11-20-2008
20100264982ELECTRONIC CIRCUIT AND METHOD OF MASKING CURRENT REQUIREMENTS OF AN ELECTRONIC CIRCUIT - A method of masking a current requirement of an electronic circuit (10-21-2010
20120105140VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY USING THE SAME - The voltage generation circuit having a standard voltage generation circuit, a reference voltage, a minimum voltage setting circuit, and a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of resistive elements. The voltage generation circuit includes a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit and another input terminal connected to the minimum voltage setting circuit. The differential amplifier has an output node showing the result of a difference voltage of the inputs. The voltage generation circuit includes a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.05-03-2012
20120105139INTEGRATED CIRCUIT - An integrated circuit includes a first driving unit configured to drive an output terminal to a first power supply voltage in response to an active mode signal, a second driving unit configured to drive the output terminal to a second power supply voltage in response to a standby mode signal, and a current control unit configured to control the current path between the first driving unit and the first power supply voltage terminal in response to a mode control signal denoting the active mode signal and the standby mode signal.05-03-2012
20090079495Power supply circuit, display driver, electro-optical device, and electronic instrument - A power supply circuit includes a voltage booster circuit that generates a boosted voltage by boosting a second voltage with respect to a first voltage, and a limiter circuit that limits a potential of the boosted voltage. The limiter circuit discharges a charge to or charges a charge from a power supply line so that the boosted voltage becomes a given target voltage, the second voltage being supplied to the power supply line. The voltage booster circuit changes a boost capability corresponding to an output load of the power supply circuit.03-26-2009
20090160536ELECTRONIC DEVICE, LOAD FLUCTUATION COMPENSATION CIRCUIT, POWER SUPPLY, AND TEST APPARATUS - Provided is a load fluctuation compensation circuit, including a first delay circuitry section that delays a clock signal supplied thereto by a delay amount that fluctuates by a prescribed first fluctuation amount in relation to a unit fluctuation amount of a power supply voltage supplied to a performance circuit; a second delay circuitry section that is disposed in parallel with the first delay circuitry section and that delays the clock signal supplied thereto by a delay amount that fluctuates by a second fluctuation amount, which is greater than the first fluctuation amount, in relation to the unit fluctuation amount of the power supply voltage supplied to the performance circuit; a load circuit that is connected to a common power supply wiring in parallel with the performance circuit; and a phase detecting section that detects a phase difference between the clock signal output by the first delay circuitry section and the clock signal output by the second delay circuitry section and that controls an amount of current consumed by the load circuit based on the detected phase difference.06-25-2009
20090160535TEMPERATURE AND PROCESS-STABLE MAGNETIC FIELD SENSOR BIAS CURRENT SOURCE - A temperature and process-stable magnetic field sensor bias current source provides improved performance in Hall effect sensor circuits. A switched-capacitor sensing element is used to sense either a reference current or the bias current directly. A current mirror may be used to generate the bias current from the reference current, and may include multiple current source transistors coupled through corresponding control transistors that are switched using a barrel shifter to reduce variations in the bias current due to process variation. The current mirror control may be provided via a chopper amplifier to reduce flicker noise and the current mirror control voltage may be held using a track/hold circuit during transitions of the chopper amplifier to further reduce noise due to the chopping action.06-25-2009
20090140797Rapidly Activated Current Mirror System - One embodiment of the invention includes a current mirror system. The system comprises a master circuit configured to conduct a first current in response to an activation state of an activation signal. The system also comprises a slave circuit configured to generate at least one second additional current in response to the activation state of the activation signal. Each of the at least one additional current can be proportional to the first current. The system further comprises a current path circuit that is configured as a substantial copy of the master circuit, the current path circuit being configured to conduct the first current in response to a deactivation state of the activation signal.06-04-2009
20090051416Apparatus, electronic component and method for generating reference voltage - An apparatus, includes a plurality of circuits each of which operates with a reference voltage, a constant current generator which generates a substantially constant current, and distributes the substantially constant current to each of the circuits, and a plurality of converters, each of the converters respectively corresponding to each of the circuits, each of which converts the substantially constant current to the reference voltage and respectively provides the reference voltage to each of the circuits.02-26-2009
20090051417Voltage Supply Insensitive Bias Circuits - A voltage-insensitive circuit includes a second circuit, and a biasing means for providing a constant bias current to the second circuit, the bias current being insensitive to power fluctuations of the voltage-insensitive circuit.02-26-2009
20090085650INTERNAL VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE - An internal voltage generating circuit is provided. The internal voltage generating circuit of a semiconductor device includes a control signal generating circuit for generating a control signal according to a number of data bits, a comparator for comparing a reference voltage to an internal voltage to generate a driving signal when the control signal is inactivated, a driving signal control circuit for inactivating the driving signal when the control signal is activated, and an internal voltage driving circuit for receiving an external power voltage and generating the internal voltage in response to the driving signal. Therefore, an internal voltage can be turned to a reference voltage level or to an external power voltage level according to the number of data input and/or output bits of a semiconductor device, and even when the number of data input and/or output bits is increased, a data access speed can be improved.04-02-2009
20090085649Negative Output Regulator Circuit and Electrical Apparatus Using Same - A negative output regulator circuit (04-02-2009
20090212851POWER SUPPLY UNIT - High-accuracy overcurrent detection is performed, while a loss resulting from the current detection is significantly reduced. A switch section outputs the voltage between the both terminals of a current detection resistor using an AND signal between an output signal from a hysteresis comparator and an output signal from a pre-driver. The voltage is filtered by an electrostatic capacitor element and a resistor, and inputted to a comparator. The comparator makes a comparison between the signals inputted to the two input terminals thereof, and outputs the result of the comparison to a digital filter. When an overcurrent begins to flow in a power supply unit, the levels of the voltages inputted to the two input terminals of the comparator are inverted so that the comparator outputs an inversion signal to the digital filter. The digital filter outputs a detection signal to an overcurrent detection circuit when an arbitrary time has elapsed.08-27-2009
20090315617Method and Algorithm of High Precision On-Chip Global Biasing Using Integrated Resistor Calibration Circuits - Systems and methods for providing bias currents to multiple analog circuits are disclosed. An integrated circuit comprises a calibration circuit which compares a high tolerance external component to a plurality of internal components manufactured to span the variability of the process, voltage and temperature. The best fitting internal component is communicated to bias circuits which can select an internal component from a local plurality of internal components with matching desired characteristics. In this manner, analog circuits can be locally biased with the tolerance usually associated with a high tolerance external reference component, without the necessity for a local external reference component.12-24-2009
20090251203REFERENCE VOLTAGE CIRCUIT - Disclosed is a reference voltage circuit including a first I-V(current-to-voltage) converter, a second I-V converter, a current mirror and a control circuit. The first I-V converter includes a parallel connection of a diode and a resistor, and the second I-V converter includes parallel-connected diodes, series-connected resistors connected in parallel with the diodes, and a resistor connected between the diodes and the ground. The current mirror supplies currents to the first and second I-V converters. The control circuit controls so that a preset output voltages of the first and second I-V converters will be equal. A mid-point terminal voltage of the first or second I-V converter is used as a reference voltage Vref.10-08-2009
20100148857METHODS AND APPARATUS FOR LOW-VOLTAGE BIAS CURRENT AND BIAS VOLTAGE GENERATION - Methods and apparatus for low-voltage bias current and bias voltage generation are disclosed. An example bias signal generation circuit disclosed herein comprises a first amplifier stage, an output amplifier stage electrically coupled with the first amplifier stage, the first amplifier stage and the output amplifier stage configured to generate an output bias signal, the output amplifier stage configured to provide the output bias signal, a low impedance circuit electrically coupled with the output amplifier stage, the low impedance circuit configured to reduce an impedance of the output amplifier stage, and a current source electrically coupled with the low impedance circuit, the current source configured to drive the low impedance circuit to reduce loading of the output amplifier stage by the low impedance circuit.06-17-2010
20100259315Circuit and Methods for Temperature Insensitive Current Reference - Circuits and methods for providing a temperature insensitive reference current are disclosed. A voltage source is received having a temperature coefficient. A first resistive element having a positive temperature coefficient and a second resistive element having a negative temperature coefficient are series coupled to form a resistor ladder. The reference current is generated by coupling the voltage source across the resistor ladder. The temperature coefficients of the first and second resistive elements are chosen to cancel the temperature coefficient of the voltage source. In another embodiment a temperature compensated voltage source is coupled to a resistor ladder of a first resistive element and a second resistive element, and the first resistive element has a positive temperature coefficient and the second resistive element has a negative coefficient; these cancel to form a temperature insensitive reference current. A method for forming a temperature insensitive reference current from resistive elements is described.10-14-2010
20090045869SEMICONDUCTOR CIRCUIT AND CONTROLLING METHOD THEREOF - A semiconductor circuit including a bias circuit (02-19-2009
20120126881MEMS SENSOR USING MULTI-LAYER MOVABLE COMBS - A MEMS sensor comprises a substrate and at least one proof mass having a first plurality of combs, wherein the proof mass is coupled to the substrate via one or more suspension beams such that the proof mass and the first plurality of combs are movable. The MEMS sensor also comprises at least one fixed anchor having a second plurality of combs. The first plurality of combs is interleaved with the second plurality of combs. Each of the combs in the first plurality of combs and the second plurality of combs comprises a plurality of conductive layers electrically isolated from each other by one or more non-conductive layers. Each conductive layer is individually coupled to a respective electric potential such that fringing electric fields are screened to reduce motion of the first plurality of combs along a sense axis due to the fringing electric fields.05-24-2012
20090212852POWER SUPPLY CIRCUIT AND SEMICONDUCTOR MEMORY - A power supply circuit outputs different set potentials in response to control signals, wherein a voltage detecting circuit changes levels of a first reference potential and a second reference potential in response to inputs of control signals, and a clock generating circuit increases a frequency of the frequency divided clock signal when the levels of the first reference potential and the second reference potential are greatly changed in response to the inputs of the control signals.08-27-2009
20080231349SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR APPARATUS INTEGRALLY HAVING SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a first power supply whose potential is controlled under control operation from an external control circuit, a second power supply whose potential is controlled under control operation from the external control circuit, and whose potential can be set independently of the first power supply, a first power-supply system comprising a circuit driven by the first power supply, a second power-supply system comprising a circuit driven by the second power supply, and a connecting circuit that performs connecting operation between a first high-potential line of the first power-supply system and a second high-potential line of the second power-supply system in response to a potential-matching signal indicating that the first power-supply system and the second power-supply system are operated by the same potential from the external control circuit.09-25-2008
20080231348Circuit for fixing peak current of an inductor and method thereof - The circuit for fixing the peak current of an inductor includes an operating current, a ramp-type boost converter and a comparator. The magnitude of the operating current is proportional to that of the voltage source of the inductor. The ramp-type boost converter is connected to the operating current. One input end of the comparator is connected to a reference voltage, and the other end is connected to the output of the ramp-type boost converter. The output of the comparator is connected to the gate of a power transistor, which controls the turn-on time of the inductor.09-25-2008
20110109377SEMICONDUCTOR INTEGRATED CIRCUIT - A circuit block operates while receiving a clock from an external circuit. A load balance circuit is connected to a shared power supply terminal together with the circuit block, and provides predetermined power consumption. A clock detection unit detects input of the clock from an external circuit. When the clock detection unit detects stopping of input of the clock, the load balance circuit is switched to the active state.05-12-2011
20100176876FUEL CELL SYSTEM - A fuel cell system, and a method of operating the fuel cell system to measure a performance difference of unit cells via an application-specific integrated circuit (ASIC) and to drive the ASIC with a low voltage from a separately included power source supply device.07-15-2010
20110115554SYSTEM HAVING MULTIPLE VOLTAGE TIERS AND METHOD THEREFOR - A system includes a first circuit, a first charge pump, a second circuit, and a second charge pump. The first circuit has a first power supply terminal coupled to a positive power supply terminal and a second power supply terminal. The first charge pump has an input coupled to positive power supply terminal and an output coupled to the second power supply terminal of the first circuit. The second circuit has a first power supply terminal coupled the second power supply terminal of the first circuit and a second power supply terminal. The second charge pump has an input coupled to the first power supply terminal of the second circuit and an output coupled to the second power supply terminal of the second circuit.05-19-2011
20110115555SEMICONDUCTOR DEVICE - In an RF tag, a mask ROM or a flash memory is used for storing data such as an ID number. Although the mask ROM can be realized at a low price, rewriting is not possible. In addition, in the flash memory, although electric rewriting is possible, production cost increases. Accordingly, it is difficult to provide an RF tag by which data rewriting is possible at a low price. An RF tag is provided with a power supply circuit having a function to generate a power supply voltage from a weak radio signal and a memory which can hold data stored in a data holding portion by the power supply voltage. With the above structure, a high-performance RF tag capable of rewriting data such as an ID number after production can be provided at a low price.05-19-2011
20120242402SEMICONDUCTOR DEVICE AND WAFER - A semiconductor device has a semiconductor substrate. The semiconductor device has a plurality of LSI regions that are formed on the semiconductor substrate and are provided with a first power supply wiring layer including a first power supply wire. The semiconductor device has a first power supply terminal formed on the semiconductor substrate. The semiconductor device has a second power supply wiring layer including a second power supply wire that electrically connects the first power supply wire and the first power supply terminal, the second power supply wiring layer is formed in a dicing region between the LSI regions along a dicing line that separates the LSI regions and the dicing line region. A first barrier metal film is formed at least in the LSI regions at a boundary between the first power supply wire and the second power supply wire.09-27-2012
20110241768SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes a first ground voltage pad, a second ground voltage pad, an internal voltage generation unit, and a division unit. The first ground voltage pad is configured to receive a first ground voltage. The second ground voltage pad is configured to receive a second ground voltage. The internal voltage generation unit includes a comparison unit configured to compare a reference voltage with a feedback voltage by using the first ground voltage, and a driving unit configured to drive an internal voltage terminal in response to an output signal of the comparison unit. The division unit is coupled between the internal voltage terminal and the second ground voltage pad, and configured to divide a voltage of the internal voltage pad and generate the feedback voltage supplied to the internal voltage generation unit.10-06-2011
20100188140Accurate Global Reference Voltage Distribution System With Local Reference Voltages Referred To Local Ground And Locally Supplied Voltage - A system and method for accurately distributing a master reference voltage to a plurality of local circuits within a system. A central master reference voltage is distributed to a plurality of local circuits as a difference in the voltage of a pair of conductors oriented substantially spatially parallel. Local reference voltages are generated based on the master reference voltage and a local voltage source.07-29-2010
20100039170NEGATIVE SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME - A negative supply voltage generating circuit includes a pulse generating circuit and a charge pump. The pulse generating circuit generates a first pulse signal and a second pulse signal in response to a clock signal. The first and second pulse signals have pulse widths different from each other. The charge pump generates a negative supply voltage by performing a charge pumping operation in response to the first and second pulse signals, and has a time interval between a switch-on time duration for charging a flying capacitor and a switch-on time duration for transmitting charges to an output capacitor.02-18-2010
20100013549VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY USING THE SAME - The voltage generation circuit that have a standard voltage generation circuit that generates a reference voltage; a minimum voltage setting circuit that sets a minimum voltage; a voltage setting circuit that has a plurality of resistive elements and a plurality of gate transistors connected to a plurality of the resistive elements, and gradually sets voltage by switching a plurality of the gate transistors to switch a combination of a plurality of the resistive elements; a differential amplifier that has two input terminals and one output node, one input terminal is connected to the reference voltage that is generated by the standard voltage generation circuit, another input terminal is connected to the minimum voltage setting circuit and the voltage setting circuit that has a plurality of resistive elements and a plurality of gate transistors connected to a plurality of the resistive elements, and the output node shows the result of the difference voltage of these two inputs; a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage; and a charge pump circuit that sets up and outputs the voltage by the control signal.01-21-2010
20090033409Bias correction device - A bias correction device to be used on a power supply which has a high voltage output end and a low voltage output end bridges the high voltage output end and the low voltage output end. When the output voltage at the low voltage output end is too low the bias correction device makes the high voltage output end to output a voltage to compensate the low voltage output end so that the voltage at the low voltage output end is raised to be maintained a preset output voltage level.02-05-2009
20110068858FAIL SAFE ADAPTIVE VOLTAGE/FREQUENCY SYSTEM - A system on chip (SoC) has a digital domain. An adaptive voltage/frequency scaling circuit includes a critical path replica circuit with respect to that digital domain. The critical path replica circuit generates a margin signal, and the adaptive voltage scaling circuit responds to the margin signal by decreasing bias voltage (and/or increasing clock frequency) applied to the digital domain of the system on chip so as to recover available margin. A fail-safe timing sensor is included within the digital domain of the system on chip. The timing sensor generates a flag signal when timing criteria within the digital domain are violated. The adaptive voltage scaling circuit responds to the flag signal by increasing the bias voltage (and/or decreasing the clock frequency) applied to the digital domain of the system on chip so as to implement a recovery operation.03-24-2011
20100321101AUTOMATIC INTERNAL TRIMMING CALIBRATION METHOD TO COMPENSATE PROCESS VARIATION - A method is described for performing an automatic internal trimming operation that can compensate process variation and supply voltage variation in an integrated circuit. A reference signal is applied when the integrated circuit is in an automatic internal trimming mode, and integrated circuit timing is trimmed into a predetermined target range after applying predefined reference cycles.12-23-2010
20080204122Circuit for eliminating pop sounds at power on and off by a moderate waveform - A circuit for eliminating pop sounds at power on and off by a moderate waveform, which includes a switch, a feedback network, an operational amplifier and an output network. When power-on, a first input terminal of the switch is connected to a low voltage, and an output terminal of the output network provides an operating DC bias which is gradually increased. When power-off, the first input terminal of the switch is connected to a reference voltage, and the output terminal of the output network provides an operating DC bias which is gradually reduced.08-28-2008
20110163798VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY USING THE SAME - The voltage generation circuit having a standard voltage generation circuit, a reference voltage, a minimum voltage setting circuit, and a voltage setting circuit that gradually sets voltage by switching a plurality of the gate transistors to switch a combination of resistive elements. The voltage generation circuit includes a differential amplifier that has one input terminal connected to the reference voltage generated by the standard voltage generation circuit and another input terminal connected to the minimum voltage setting circuit. The differential amplifier has an output node showing the result of a difference voltage of the inputs. The voltage generation circuit includes a pump control circuit that outputs a control signal controlling a charge-pump motion, based on the differential voltage, and a charge pump circuit that sets up and outputs the voltage by the control signal.07-07-2011
20120146715Temperature Independent Reference Circuit - A temperature independent reference circuit includes first and second bipolar transistors with commonly coupled bases. First and second resistors are coupled in series between the emitter of the second bipolar transistor and ground. The first and second resistors have first and second resistance values, R06-14-2012
20110187444VOLTAGE TRIMMING CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A voltage trimming circuit of a semiconductor memory apparatus may include a first voltage generation block configured to select voltage levels of a first node and a second node and divide a voltage between the first node and the second node to generate a first division voltage group; a second voltage generation block configured to select voltage levels of a third node and a fourth node and divide a voltage between the third node and the fourth node to generate a second division voltage group; a first switch block configured to select one division voltage of the first division voltage group to output the selected division voltage as a first reference voltage; and a second switch block configured to select one division voltage of the second division voltage group to output the selected division voltage as a second reference voltage.08-04-2011
20110260782ELECTRONIC CIRCUIT WITH A REGULATED POWER SUPPLY CIRCUIT - A power supply regulator circuit uses a feedback loop to control current through a first output transistor from a power supply input to a regulated power supply output. The first output transistor is included in an integrated circuit. In order to avoid heating of the integrated circuit in excess of an acceptable level due to permanent supply of a high current through the first transistor, current through a second output transistor in parallel with the first transistor, but outside the integrated circuit is raised when it is detected that the current through the first output transistor exceeds a threshold level. The second output transistor outside the integrated circuit serves to take over supply of a part of the power supply current from first output transistor inside integrated circuit, when long term supply of that part from first output transistor would lead to undesirable heating of the integrated circuit. During a limited time interval a first transistor current above the threshold level is acceptable. During this time interval the current through the second output transistor is raised slowly in order to avoid unpredictable stability problems and the generation of excessive power supply noise.10-27-2011
20110080209METHOD AND APPARATUS FOR IMPLEMENTING SLEW RATE CONTROL USING BYPASS CAPACITOR - A circuit to control the slew rate of charging a capacitance using the capacitance is disclosed. An example circuit includes a regulator circuit to regulate a supply voltage during a normal operation mode of the circuit. A capacitance circuit is coupled to the regulator circuit. The regulator circuit is coupled to charge a capacitance between a first node and a second node of the capacitance circuit with a charge current. A slew rate control circuit is coupled to the regulator circuit and the capacitance circuit. The slew rate control circuit sets a slew rate of a voltage between the first and second nodes during a power up mode of the circuit.04-07-2011
20110095814CIRCUIT AND METHOD FOR GENERATING INTERNAL VOLTAGE, AND SEMICONDUCTOR DEVICE HAVING THE CIRCUIT - An internal voltage generating method performed in a semiconductor device, the internal voltage generating method including generating a plurality of initialization signals corresponding to a plurality of external power supply voltages; detecting a transition of a lastly-generated initialization signal from among the plurality of initialization signals and generating a detection signal; and generating a first internal voltage according to the detection signal.04-28-2011
20100176875Method for Improving Power-Supply Rejection - An electronic circuit may comprise an input stage powered by a supply voltage and configured to receive a reference signal. The circuit may further comprise an output stage powered by the supply voltage and coupled to the input stage, and configured to generate an error signal based on: the reference signal, and a feedback signal based on an output signal. The circuit may also include a pass transistor powered by the supply voltage and configured to generate the output signal based on the error signal. A capacitor coupled between the supply voltage and the output stage may increase the current flowing in the output stage, resulting in the output stage conducting current even during a rising edge of the supply voltage, preventing the output signal from reaching the level of the supply voltage during the rising edge of the supply voltage.07-15-2010
20090179694DISCHARGE CIRCUIT - Provided is a discharge circuit. The discharge circuit for discharging two positive and negative high voltages after an erase operation of a non-volatile memory includes: a negative high voltage side discharge unit flowing constant current from a supply voltage to a negative high voltage node of the non-volatile memory to discharge the negative high voltage node; and a positive high voltage side discharge unit flowing constant current from a positive high voltage node of the non-volatile memory to a ground voltage to discharge the positive high voltage node, the positive high voltage side discharge unit simultaneously operating with the negative high voltage side discharge unit, wherein values of the constant currents flowing from the positive and negative high voltage side discharge units are approximately equal.07-16-2009
20100026378METHODS FOR DESIGNING INTEGRATED CIRCUITS EMPLOYING VOLTAGE SCALING AND INTEGRATED CIRCUITS DESIGNED THEREBY - Various embodiments of methods of designing an integrated circuit (IC). One embodiment of one such method includes: (1) generating a functional design for the IC, (2) determining performance objectives for the IC, (3) determining an optimization target voltage for the IC, (4) determining whether the IC needs voltage scaling to achieve the performance objectives at the optimization target voltage and, if so, whether the IC is to employ static voltage scaling or adaptive voltage scaling, (5) using the optimization target voltage to implement a layout from the functional IC design that meets the performance objectives and (6) performing a timing signoff of the layout at the optimization target voltage.02-04-2010
20100019834Optimized Power Supply for an Electronic System - A method of adjusting a voltage supply to an electronic device coupled to a wired communication link in accordance with a performance metric associated with the wired communication link. A voltage adjust signal is generated based on the performance metric. The voltage adjustment signal is then used for updating the voltage supply to the electronic device.01-28-2010
20100019833VOLTAGE GENERATING CIRCUIT AND ULTRASONIC DIAGNOSING DEVICE - A voltage generating circuit generates a voltage for driving an ultrasonic oscillator, and includes a multi-stage connected power supply circuit without a transformer.01-28-2010
20090174467POWER SUPPLY CIRCUIT FOR THE WALL MOUNTED ELECTRONIC SWITCH - This is a disclosure of a power supply circuit for wall-mounted electronic switches. The disclosed invention is about a power supply circuit for driving circuit inside the wall-mounted electronic switches, which can supply sufficient current demanded by these switch circuits. Recently the functions of wall-mounted electronic switches are being diversified from lamp switching to security, watch, remote control, room temperature control, etc. and the amount of current required inside the switch circuits is increased up to tens of mA. This requires a competitive power supply circuit that can supply a high current. In addition, a space-saving characteristic is also required because the space of a wall-mounted switch is narrow. The invented power supply circuit for electronic switches saves space, supplies a high current, and enhances competitiveness in price and quality, and consequently it makes a considerable contribution to the competitiveness of wall-mounted electronic switches.07-09-2009
20100176877DIRECT-CURRENT POTENTIAL GENERATION CIRCUIT, MULTISTAGE CIRCUIT AND COMMUNICATION APPARATUS - A current source generates a direct-current potential at a terminal of a resistor by supplying a current to the resistor and a diode-connected transistor coupled to the resistor in series.07-15-2010
20090140796SLEW RATE CONTROL IN OUTPUT DRIVER - A slew rate control circuit in output driver of switching circuit to prevent power ground undershoot is introduced. The gate capacitance of lower power transistor is first fast discharged to ensure the operation of the output signal. The gate capacitance of lower power transistor is then slowly discharged to limit OUT SLEW RATE. The gate capacitance of lower power transistor is further slowly discharged when the power ground level is below common ground. With above controlling, the gate voltage slew rate of lower power transistor is reduced when the lower power transistor is almost fully turned OFF. Therefore, undershoot at the power ground is avoided. Similar slew rate control circuit can also be derived in output driver of switching circuit to prevent PVCC overshoot.06-04-2009
20120038415METHOD AND APPARATUS FOR MAINTAINING CIRCUIT STABILITY - A control circuit for a transistor arrangement comprises a monitoring arrangement (02-16-2012
20120249226SEMICONDUCTOR DEVICE - A semiconductor device includes: first and second circuit cell arrays extending in first direction; first and second power supply lines each extending in first direction and arranged over first circuit cell array, first power supply line being supplied with first power source voltage; third power supply line extending in first direction separately from second power supply line, arranged over second circuit cell array, and supplied with second power source voltage; first transistor coupled between second and third power supply lines; and first circuit arranged on first circuit cell array and operating on first and second power source voltages supplied from first and second power supply lines, respectively.10-04-2012
20110156807INTERNAL VOLTAGE CONTROL CIRCUIT - An internal voltage control circuit includes active drivers, a control unit, and a time interval adjustment unit. The active drivers are configured to receive a common internal voltage. The control unit is configured to control respective enable operations of the active drivers. The time interval adjustment unit is configured to respectively supply enable signals, generated by the control unit, to the active drivers at respective predetermined time intervals.06-30-2011
20120013395Internal Voltage Generation Circuit - An internal voltage generation circuit includes a driving control signal generation unit configured to receive a temperature signal enabled when the internal temperature is below a preset temperature and generate first and second driving control signals, and an internal voltage generation unit configured to receive the first and second driving control signals and generate an internal voltage.01-19-2012
20120056666SEMICONDUCTOR APPARATUS - Various embodiments of a semiconductor apparatus are disclosed. In one exemplary embodiment, the semiconductor apparatus may include an internal voltage generation unit configured to generate an internal voltage having a voltage level corresponding to a code value of a voltage control code, a voltage comparison unit configured to compare a voltage level of a target voltage with a voltage level of the internal voltage, and a voltage control code generation unit configured to adjust the code value of the voltage control code based on the comparison result of the voltage comparison unit.03-08-2012
20120206191EDGE RATE CONTROL (ERC) PRE-BIASING TECHNIQUE - This document discusses, among other things, apparatus and methods for pre-biasing an edge rate controlled output stage of a switch circuit. In an example, a switch circuit can include an output transistor and a pre-bias circuit coupled to the output transistor. The pre-bias circuit can include a pre-bias transistor configured to selectively couple a control node of the output device to a first voltage, and wherein the pre-bias transistor can include a lower threshold voltage than the output transistor.08-16-2012
20120025901SENSOR NODE VOLTAGE CLAMPING CIRCUIT AND METHOD - A voltage clamping circuit includes a current source having a fixed current source and a variable current source and a variable resistor receiving current from the current source. The variable resistor varies its resistance in response to an environmental operating condition. The voltage clamping circuit also includes an amplifier configured to compare a sensor node voltage with a reference voltage, the sensor node voltage being in communication with the voltage drop across the variable resistor. The amplifier is configured and connected to provide a control output to control the variable current source to modify current output from the variable current source to at least in part prevent the sensor node voltage from exceeding a reference voltage when certain operating conditions are present.02-02-2012
20120154025DUAL-GATE TRANSISTORS - A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.06-21-2012
20120169411DEVICE AND METHOD FOR COMPENSATING FOR VOLTAGE DROPS - A device that includes at least one current consuming component. The device is characterized by including a compensation circuit adapted to compare between a voltage level at a sensing point within an integrated circuit and between a reference voltage derived from a voltage peak level at the sensing point; and to selectively increase the voltage at the sensing point in response to the comparison. A method for compensating for voltage drops in an integrated circuit, the method includes providing at least a first supply voltage to an integrated circuit; the method is characterized by including: comparing between a voltage level at a sensing point within an integrated circuit to a reference voltage derived from a voltage peak level at the sensing point; and selectively increasing the voltage at the sensing point in response to the comparison.07-05-2012
20100289561INTERNAL VOLTAGE GENERATING CIRCUIT CAPABLE OF CONTROLLING SWING WIDTH OF DETECTION SIGNAL IN SEMICONDUCTOR MEMORY APPARATUS - An internal voltage generating circuit capable of controlling a swing width of a detection signal in a semiconductor memory apparatus is provided. The internal voltage generating circuit of a semiconductor memory apparatus includes an internal voltage level detecting unit configured to compare an internal voltage with a target voltage and then generate a detection signal, and an internal voltage level control unit configured to control the internal voltage based on a voltage level of the detection signal, wherein the internal voltage level detecting unit is configured to control a swing width of the detection signal based on a voltage difference between the internal voltage and the target voltage.11-18-2010
20100244937Compensation Techniques for Reducing Power Consumption in Digital Circuitry - A compensation circuit for reducing power consumption in at least one digital circuit includes a first sample circuit connected to a first supply voltage, a second sample circuit connected to a second supply voltage, and a controller connected to the first and second sample circuits. The first and second sample circuits are substantially functionally equivalent to one another but optimized for different regions of operation within a specified range of PVT conditions. The controller is operative to receive respective output signals from the first and second sample circuits, to monitor a functionality of the second sample circuit relative to the first sample circuit, and to adjust a level of the second supply voltage to ensure correct operation of the second sample circuit throughout the specified range of PVT conditions. The digital circuit is operative from the second supply voltage.09-30-2010
20100244938FUNCTIONAL MOLECULAR ELEMENT, PROCESS FOR PRODUCING THE SAME AND FUNCTIONAL MOLECULAR DEVICE - A functional molecular element having a structure in which the contact resistance at the interface between a constituting molecule and an electrode can be reduced, the functional molecular element having a specific conductivity, a process for producing the same, and a functional molecular device, are provided. A π-electron conjugated molecule 09-30-2010
20120161859INTERNAL SUPPLY VOLTAGE GENERATING CIRCUIT AND METHOD FOR GENERATING INTERNAL SUPPLY VOLTAGE - An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator, and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.06-28-2012
20110181347MEMRISTOR-PROTECTION INTEGRATED CIRCUIT AND METHOD FOR PROTECTION OF A MEMRISTOR DURING SWITCHING - A memristor-protection integrated circuit. The memristor-protection integrated circuit includes a first current-bias circuit, a second current-bias circuit, an inverter, and a current limiter. The first and second current-bias circuits are configured to be coupled to first and second power-supply rails, respectively. The inverter is coupled to the first current-bias circuit and to the second current-bias circuit, and is configured to couple at least one memristor to at least one of the first current-bias circuit and the second current-bias circuit in response to an input signal applied to the inverter. The current limiter is coupled to the first current-bias circuit and coupled to the second current-bias circuit, and is configured to limit current flowing through the memristor.07-28-2011
20090058510SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a voltage detector configured to detect a voltage level of an external power supply voltage, a first core voltage generation driver configured to operate when the external power supply voltage is in a high level region and a second core voltage generation driver configured to operate when the external power supply voltage is in a low level region.03-05-2009
20120169412FAST POWER-ON BIAS CIRCUIT - Conventional bias circuits exhibit a number of limitations, including the time required to power-up a bias circuit following a low-power state. Large current surges in the supply network induce ringing, further complicating a power-up process. Example embodiments reduce power-up time and minimize current surges in the supply by selectively charging and discharging capacitance to the circuit during power-up and power-down of the bias circuit.07-05-2012
20100052773CIRCUIT ARRANGEMENT FOR THE POWER SUPPLY OF AN INTEGRATED CIRCUIT - In a circuit arrangement (03-04-2010
20120176185TECHNIQUES FOR ATTENUATING RESONANCE INDUCED IMPEDANCE IN INTEGRATED CIRCUITS - Provided is an integrated circuit system and method for biasing the same that features bifurcating a power distribution network to provide a bias voltage to the integrated circuit system. One of the branches of the power distribution network attenuates an impedance in the power distribution network that supplies transient currents and the remaining branch supplies a substantially steady-state currents.07-12-2012
20120176184METHOD AND CIRCUIT FOR AN OPERATING AREA LIMITER - The present invention relates to circuits and methods for limiting the operating area of a transistor in a constant current source. The circuits and methods use a detector and a driver to limit the operating area of a transistor. The detector and driver have parameters selected so that, when the voltage at the drain of the transistor satisfies a reference condition, the driver causes drain current of the transistor to decrease. The reference condition is determined relative to the maximum safe drain-to-source voltage at the design drain current of the constant current source.07-12-2012
20120313696ULTR-LOW-POWER POWER SUPPLY SYSTEM FOR AN IC CHIP - Embodiments of the present invention may provide a power supply system that uses a capacitive voltage divider to selectively monitor various power supplies on an IC chip. The power supply system may sample a monitored power supply to a capacitor and select certain capacitors from a set of switched capacitors to divide down the sampled voltage. The resulting voltage may be compared to a voltage reference. Using different selections of switched capacitors, the monitored power supply may be compared for different voltage levels. The ratio of the sampling capacitor to the selected capacitors may determine a voltage level the comparator will trigger. Further, based on the monitored power supply level, the power supply system may turn on a switch between an external power supply and a regulated digital power supply to charge the regulated digital power supply while a main LDO is turned off.12-13-2012
20110121889Temperature independent reference circuit - A temperature independent reference circuit includes first and second bipolar transistors with commonly coupled bases. First and second resistors are coupled in series between the emitter of the second bipolar transistor and ground. The first and second resistors have first and second resistance values, R05-26-2011
20110121888LEAKAGE CURRENT COMPENSATION - Implementations related to compensating for on-current leakage associated with current source arrangements are disclosed. An implementation may be provided that includes a replicated current mirror output stage. A circuit may be disposed between a current mirror output stage and the replicated current mirror output stage. The circuit may be implemented to drive a voltage associated with the current mirror output stage to a voltage level associated with the replicated current mirror output stage. A current may be supplied by the circuit to drive the voltage associated with the current mirror output stage. In one implementation, the current is substantially equal to an on-current leakage associated with the current mirror output stage.05-26-2011
20100327960INTEGRATED CIRCUIT OPERABLE IN A STANDBY MODE - An integrated circuit, comprises a wakeup terminal; a supply voltage terminal configured to receive a supply voltage; and a power control circuit. The power circuit comprises an enable circuit coupled to the wakeup terminal and configured to generate a voltage monitoring enable signal as a response to a wakeup signal received at the wakeup terminal, and a voltage monitoring circuit for generating a supply voltage level indication signal. The voltage monitoring circuit is coupled to the supply voltage terminal and comprises an operation switch controlled by the voltage monitoring enable signal. The voltage monitoring circuit is configured to determine if the supply voltage is above a threshold voltage and set the supply voltage level indication signal accordingly. The integrated circuit further comprises processing circuitry, with the supply voltage level indication signal controlling the switching between a normal operation state and a standby state of the processing circuitry.12-30-2010
20120319765SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF SUPPLYING POWER TO THE SAME - A semiconductor IC including a supply voltage generator, one or more first circuit blocks, and one or more second circuit blocks. The supply voltage generator is configured to generate a first supply voltage and a second supply voltage based on an external supply voltage, and to provide the first supply voltage to a first power bus and the second supply voltage to a second power bus. The first circuit blocks are connected between the first power bus and the second power bus, and the second circuit blocks are connected between the second power bus and ground.12-20-2012
20120319766SIGNAL OUTPUT CIRCUIT - In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.12-20-2012
20120319764Energy Borrowing to Reduce System Voltage Drop - An integrated circuit (IC) includes a first section having a sinking component sinking excessive current. A second section includes at least one sourcing component that, in operation, stores energy. A structure is provided to provide the stored energy from the at least one sourcing component to the sinking component, the stored energy being utilized by a load component included within the second section.12-20-2012
20130169353INTERNAL VOLTAGE GENERATION CIRCUIT - An internal voltage generation circuit includes a pumping voltage generation unit configured to generate a pumping voltage when a first internal voltage has a lower level than a first reference voltage or a second internal voltage has a lower level than a second reference voltage, and a select transmission unit configured to selectively transmit the pumping voltage as the first internal voltage or the second internal voltage.07-04-2013
20120268197PAD CONTROLLING APPARATUS - Disclosed herein is a pad controlling apparatus controlling current and voltage applied to a pad, the pad controlling apparatus including: a voltage drop unit dropping the voltage applied to the pad; a switching unit connected in parallel with the voltage drop unit; and a control unit comparing a level of the dropped voltage and first reference voltage with each other and turning on the switching unit on when the level of the dropped voltage is larger than the first reference voltage. According to the present invention, even though interrupt occurs from the outside, a chip may be normally operated.10-25-2012
20100231290MEASUREMENT DEVICE, ELECTRONIC SYSTEM, AND CONTROL METHOD UTILIZING THE SAME - A measurement device independent of an integrated circuit including a transistor is disclosed. A current supply provides a first current and a second current. A switching unit transmits the first or the second current to the transistor. A current detection unit generates a first voltage and a second voltage according to a first base current of the transistor and the first current and generates a third voltage and a fourth voltage according to a second base current of the transistor and the second current. A voltage processing unit processes the first and the second voltages to generate a first differential value and processes the third and the fourth voltages to generate a second difference value. A calculation unit divides the second differential value by the first differential value to obtain a current ratio and adjusts at least one of the first and the second currents according to the current ratio.09-16-2010
20100201436AMPLIFIER AND SOURCE DRIVER UTILIZING THE AMPLIFIER - A source driver includes an amplifier, and the amplifier includes an input stage, an output stage, a first current source, a second current source, a third current source, and a switch module. The first current source is utilized to provide a first bias current to the input stage, the second current source is utilized to provide a second bias current to the output stage, and the third current source is utilized to provide a third bias current. The switch module is utilized for selectively connecting the third current source to the input stage or the output stage.08-12-2010
20130015913ELECTRONIC APPARATUSAANM HORIKAWA; SeiichiroAACI KanagawaAACO JPAAGP HORIKAWA; Seiichiro Kanagawa JPAANM Akita; KojiAACI KanagawaAACO JPAAGP Akita; Koji Kanagawa JPAANM Kasami; HideoAACI KanagawaAACO JPAAGP Kasami; Hideo Kanagawa JP - In an embodiment, an electronic apparatus is mounted with a card unit including first and second devices driven with different driving voltages. The electronic apparatus includes: first and second voltage generating units, first and second control units. The first voltage generating unit generates a first driving voltage for driving the first device and a second driving voltage for driving the second device using electric power from the battery. The second voltage generating unit generates the first driving voltage and second driving voltage using electric power transmitted from the external device. The first control unit controls the first selection unit such that any one of the first driving voltage generated by the first voltage generating unit and the first driving voltage generated by the second voltage generating unit is selected depending on the electric power supply capability of the battery.01-17-2013
20130021090POWER CONTROL DEVICE AND METHOD THEREFOR - Power control is facilitated. In accordance with one or more embodiments, power is supplied to power rails of an integrated circuit using a power control circuit including a power regulator and a reset circuit that is responsive to a supply voltage. The power regulator provides power to the power rails, based upon a control signal. The reset circuit controls the power regulator to provide power to the power rails independently of the control signal when the supply voltage is below an operational voltage level, and controls the power regulator to provide power to the power rails in response to the control signal when the supply voltage reaches the operational voltage level.01-24-2013
20080252362NEGATIVE VOLTAGE CONVERTER - A negative voltage converter includes six transistors. A first end and a control end of a first transistor are coupled to a signal input. A first end of a second transistor is coupled to the signal input, and a control end of which is coupled to a first clock and the first transistor. A first end of a third transistor is coupled to the signal input, a control end of the third transistor is coupled with a second clock and the second transistor. A first end of a fourth transistor is coupled to the second end of the third transistor, a control end of which is coupled with the first clock and the third transistor. A first end of a fifth transistor is coupled to the second end of the third transistor, and a control end of which is coupled with the second clock and the fourth transistor A first end of a sixth transistor is coupled to the second end of the third transistor, and a control end of which is coupled with the first clock and the fifth transistor.10-16-2008
20110273226GATE DRIVING CIRCUIT - An exemplary gate driving circuit is adapted for receiving an external gate power supply voltage and an external control signal, sequentially generating multiple internal shift data signal groups and thereby sequentially outputting multiple gate signals. Each of the internal shift data signal groups includes multiple sequentially-generated internal shift data signals. The gate driving circuit includes multiple gate signal generating modules. Each of the gate signal generating modules includes a voltage modulation circuit and a gate output buffer circuit. The voltage modulation circuit modulates the external gate power supply voltage according to a corresponding one of the internal shift data signal groups and the external control signal, and thereby a modulated voltage signal is obtained. The gate output buffer circuit includes a plurality of parallel-coupled output stages. The output stages output the modulated voltage signal as a part of the gate signals during the output stages being sequentially enabled.11-10-2011
20130135037VOLTAGE MULTIPLYING CIRCUIT, SIGNAL SWITCH CHIP AND IMPEDANCE ADJUSTING METHOD THEREOF - A signal switch chip with a chip voltage is disclosed. The signal switch chip includes a transmission gate and a voltage multiplying circuit. The voltage multiplying circuit receives a basic voltage to generate a multiplying voltage, and the multiplying voltage is N times the basic voltage. N is a positive integer, and N is greater than 1. The transmission gate is coupled to the multiplying circuit and receives the multiplying voltage to adjust an equivalent impedance of the transmission gate, and the multiplying voltage is higher than the chip voltage.05-30-2013
20130113548METHODS AND CIRCUITS FOR GENERATING REFERENCE VOLTAGE - A circuit for generating a reference voltage includes a first reference voltage generating circuit disposed outside a chip and a second reference voltage generating circuit disposed inside the chip. The first and second reference voltage generating circuits output first and second reference voltages to first and second output terminals, respectively. The second reference voltage generating circuit includes at least one pull-up resistor and at least one pull-down resistor. The pull-up resistor is coupled between a first node where an internal power supply voltage is coupled and the second output terminal. The pull-down resistor is coupled between a second node and the second output terminal, wherein a voltage at the second node is relatively lower than a voltage at the first node. A third reference voltage is outputted from a node where the first output terminal is coupled to the second output terminal.05-09-2013
20130127525IC CIRCUIT - The present invention relates to an IC circuit. In an embodiment, an IC circuit includes: an RT terminal connected to an external; a current mirroring unit conducting a channel current between internal voltage power and the RT terminal and generating an internal reference current mirrored with the channel current; a negative feedback unit receiving the internal reference current, equalizing voltages of an RT terminal connection terminal and an internal reference current output terminal of the current mirroring unit to make the internal reference current constant, and providing the internal reference current inside the IC circuit; and an IC state indicating unit having a transistor, which operates complementarily with the current mirroring unit, connected between the RT terminal and a ground and providing the state of an IC or a system to the RT terminal by being linked with the complementary operation of the current mirroring unit.05-23-2013
20110221516INFORMATION TECHNOLOGY EQUIPMENT - Information technology equipment includes a circuit block, a local power source line for supplying a power source to the circuit block, a power source line, and a first transistor which is provided with a source-drain path thereof between the power source line and the local power source line, in which the first transistor is controlled to an OFF state in a first state, and is controlled to an ON state in a second state, and when the first state is shifted to the second state, the first transistor is controlled such that a rate of changing a current flowing in the source-drain path of the first transistor does not exceed a predetermined value.09-15-2011
20130147544REFERENCE VOLTAGE GENERATION CIRCUIT AND INTERNAL VOLATAGE GENERATION CIRCUIT USING THE SAME - A reference voltage generation circuit configured to generate a reference voltage level that is compensated for based on an internal temperature change, where the reference voltage level is adjusted based on a resistance value controlled in response to a control signal.06-13-2013
20100289560Systems and Methods of Bit Stuffing Pulse Width Modulation - Systems and methods for bit stuffing pulse width modulation are provided. Example embodiments of the systems and methods of bit stuffing pulse width modulation disclosed herein may allow for a significant reduction in the size of the bootstrap capacitor while giving up only a small percentage of output drive, and reduce die space. Included in such systems and methods is the ability to digitally detect inactivity on the PMW signals for a class D power amplifier, and to digitally insert small charge pulses at a fairly low repetition rate relative to the normal switching frequency. The low repetition rate may preserve the maximum output power while still allowing enough charge to transfer to the bootstrap capacitor.11-18-2010
20120274395BATTERY MANAGEMENT SYSTEM WITH MOSFET BOOST SYSTEM - A boost converter for driving the gate of n-channel MOSFET power devices is described. The boost converter includes a monitoring circuit and a kick start circuit to quickly bring the boost converter online when required to drive the MOSFET on.11-01-2012
20110234308BIAS GENERATOR PROVIDING FOR LOW POWER, SELF-BIASED DELAY ELEMENT AND DELAY LINE - An improved bias generator incorporates a reference voltage and/or a reference current into the generation of bias voltages. In some cases, the output of a biased delay element has a constant voltage swing. A delay line of such constant output voltage swing delay elements may be shown to provide reduced power consumption compared to some known self-biased delay lines. Furthermore, in other cases, providing the reference current to a novel bias generator allows a delay line of delay elements biased by such a novel bias generator to show reduced sensitivity to operating conditions, reduced sensitivity to variation in process parameters and improved signal quality, thereby providing more robust operation.09-29-2011
20110234307COUNTERMEASURE METHOD AND DEVICE AGAINST AN ATTACK BY FAULT INJECTION IN AN ELECTRONIC MICROCIRCUIT - The disclosure relates to a method for detecting an attack in an electronic microcircuit, comprising: forming the microcircuit in a substrate, forming in the substrate a first well electrically isolated from the substrate, by a second well and an embedded well, forming in the first and second wells a data processing circuit comprising a ground terminal formed in the first well and a power supply terminal formed in the second well, and activating a detection signal when a voltage at the ground or power supply terminal of the data processing circuit crosses a threshold voltage.09-29-2011
20120007663INTEGRATED CIRCUIT WITH DEVICE FOR ADJUSTMENT OF THE OPERATING PARAMETER VALUE OF AN ELECTRONIC CIRCUIT AND WITH THE SAME ELECTRONIC CIRCUIT - An integrated circuit includes an electronic circuit and a device for adjustment of the operating parameter value of the electronic circuit. The electronic circuit comprises a resistive stage. The device comprises a first circuit portion adapted to adjust said operating parameter when the device is active and the electronic circuit is inactive, and adapted to be inactive when the electronic circuit is active, and a second circuit portion adapted to determine the active or inactive state of the device in response to the value of an external control signal. The integrated circuit comprises a first external terminal for the connection to ground, a second external terminal for inputting said control signal, a further external terminal for inputting a further external signal and a deactivation circuit driven by said further external signal to deactivate the electronic circuit when the device is active.01-12-2012
20130194032APPARATUSES AND METHODS FOR PROVIDING CAPACITANCE IN A MULTI-CHIP MODULE - Apparatuses, multi-chip modules, capacitive chips, and methods of providing capacitance to a power supply voltage in a multi-chip module are disclosed. In an example multi-chip module, a signal distribution component may be configured to provide a power supply voltage. A capacitive chip may be coupled to the signal distribution component and include a plurality of capacitive units. The capacitive chip may be configured to provide a capacitance to the power supply voltage. The plurality of capacitive units may be formed from memory cell capacitors.08-01-2013
20120025900SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A semiconductor device includes a first internal voltage driving unit configured to drive an internal voltage, a second internal voltage driving unit configured to drive the internal voltage in an operation period corresponding to an enable signal, a current amount detection unit configured to detect amount of current supplied by the first internal voltage driving unit, and a current amount comparison unit configured to compare the amount of detected current by the current amount detection unit with amount of a reference current, and determine whether or not to activate the enable signal in response to a comparison result.02-02-2012
20120299643DRIVING CIRCUIT FOR A CIRCUIT GENERATING AN ULTRASONIC PULSE, IN PARTICULAR AN ULTRA-SONIC TRANSDUCER, AND CORRESPONDING DRIVING METHOD - A driving circuit has output terminal connected to an ultrasonic transducer and provides an output voltage. The driving circuit includes an output transistor coupled between a voltage reference and the output terminal, a high voltage comparator coupled to said output terminal and to a threshold voltage reference), a start-up circuit controlled by a setting signal; and a switching ON/OFF circuit having an input coupled to the start-up circuit an input coupled to the comparator, and an output coupled to a control terminal of the output transistor. The start-up circuit provides an ON signal to the switching on/off circuit and the comparator provides an OFF signal to the switching on/off circuit which switches off the output transistor. The high voltage comparator generates the switching off signal in response to the output voltage reaching a desired supply voltage value which depends on the value of the first threshold voltage reference.11-29-2012

Patent applications in class Stabilized (e.g., compensated, regulated, maintained, etc.)

Patent applications in all subclasses Stabilized (e.g., compensated, regulated, maintained, etc.)