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Insulated gate FET (e.g., MOSFET, etc.)

Subclass of:

327 - Miscellaneous active electrical nonlinear devices, circuits, and systems

327365000 - GATING (I.E., SWITCHING INPUT TO OUTPUT)

327419000 - Utilizing three or more electrode solid-state device

327427000 - Field-effect transistor

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
327437000 Complementary metal-oxide semiconductor (CMOS) 32
327436000 Plural devices in series 22
Entries
DocumentTitleDate
20100117714Semiconductor Integrated Circuit - A semiconductor integrated circuit that carries out intermittent operation, includes a processor block; an logical operation block other than a processor; a first switch part configured to supply a normal operation voltage to the logical operation block other than a processor; a second switch part configured to supply the normal operation voltage to the processor block; a third switch part configured to supply a data holding voltage lower than the normal operation voltage to the processor block; and a fourth switch part configured to be turned on, when the second switch means is turned off and the third switch means is turned on, and supply the data holding voltage to the processor block.05-13-2010
20090167412GATE-CHARGE RETAINING SWITCH - The present invention discloses MOSFET or IGBT switch drive circuitry that uses the gate capacitance and the inherently high gate resistance of such switch devices to provide essentially bistable switching. Gate-charge is injected to enhance the switch device(s), invoking an ON state. Gate-charge is removed to deplete the switch device(s), invoking an OFF state. Circuitry is provided to effect charge removal immediately following charge injection, enabling relatively large switch devices to operate efficiently at several MHz. An arrangement for bipolar switch operation is provided.07-02-2009
20130033301STRUCTURE OF OUTPUT STAGE - A structure of an output stage, and the structure includes a first electrode, a second electrode, a third electrode, a plurality of first auxiliary electrodes, a plurality of second auxiliary electrodes, a plurality of third auxiliary electrodes, a plurality of fourth auxiliary electrodes, a first switching unit, and a second switching unit. Wherein, a plurality of first currents flow through the turned-on first switching unit, and a first flowing direction of the first currents in the turned-on first switching unit is from the first electrode to the second electrode. A plurality of second currents flow through the turned-on second switching unit, and a second flowing direction of the second currents in the turned-on second switching unit is from the second electrode to the third electrode.02-07-2013
20100109751HIGH-PERFORMANCE ANALOG SWITCH - Techniques for designing a high performance analog switch for use in electronic circuit applications. In one aspect, a variable bulk voltage generation module is provided to vary the bulk voltage of a transistor in the switch, such that the threshold voltage of the transistor is reduced during the on state. In another aspect, a pulling transistor is provided to pull a middle node of the switch to a DC voltage during the off state to further increase the isolation provided by the switch.05-06-2010
20090115490OPTICAL SEMICONDUCTOR RELAY DEVICE - A transient voltage occurring between output terminals during ON/OFF operation is reduced. There are provided a pair of input terminals IN05-07-2009
20090302927CONTROLLING A MOS TRANSISTOR - A device for controlling (12-10-2009
20110012667Zero Power Drain Pushbutton On Switch - A normally-open pushbutton switch is coupled to and cooperates with a pair of MOSFETs to provide a power on switch function for a personal audio device that does not require power to be drawn from a power source to monitor the pushbutton switch while awaiting operation of the pushbutton switch to cause the personal audio device to be powered on.01-20-2011
20130063200CMOS CIRCUIT AND SEMICONDUCTOR DEVICE - A CMOS circuit and a semiconductor device having small leakage current and a low threshold voltage, and which is operated at high speed and with a small voltage amplitude, including an output stage circuit having MOSTs configured such that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, and upon deactivation, a voltage is applied to the gate of each of the MOSTs to cause a reverse bias to be applied between the gate and source of the MOST. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage.03-14-2013
20130162327METHOD AND SYSTEM FOR REDUCTION OF OFF-CURRENT IN FIELD EFFECT TRANSISTORS - A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn.06-27-2013
20110128065LOAD DRIVING APPARATUS - Semiconductor relays switch power supplied from a power source to drive loads, and further detect current values of electric currents flowing through the loads. A control section intermittently turns ON the semiconductor relays via driving circuits, thereby limiting electric power consumption of the loads. Further, the control section calculates, based on the current values detected by the semiconductor relays, load electric power consumption of the loads, and estimated electric power consumption of the loads when the semiconductor relays are continuously ON, and allows a display section to display, as a value indicative of an energy-saving effect, an electric power amount difference i.e. a saved electric energy that is based on an electric power difference obtained by subtracting the load electric power consumption from the estimated electric power consumption.06-02-2011
20110298525High-Speed Current Switching - A method and circuit for high-speed current switching includes altering the operating voltage of the Current Source using a resistor in non-transmission mode, turning parasitic capacitive coupling into an advantage for faster settling of CS gate bias voltage. The resistor is designed to compensate for the voltage coupling when the Current Source is switched to Transmit mode. This greatly improves the settling time of current and bias voltage of the Current Source transistor without adding any complex circuit and saves 100% of power consumed in non-transmit mode.12-08-2011
20120032728AUTO-OPTIMIZATION CIRCUITS AND METHODS FOR CYCLICAL ELECTRONIC SYSTEMS - Methods, systems, and devices are described for an adjustment module that interacts with a parameter detection module to provide a threshold value for initiating switching of a switching module in a cyclical electronic system. Aspects of the present disclosure provide a switching module used in conjunction with an inductor that is coupled with the switching module. The threshold voltage for switching the switching module may be adjusted to provide switching at substantially zero volts while maintaining sufficient energy in the inductor to drive the voltage at a switching element in the switching module to zero volts. Such auto-adjustment circuits may allow for enhanced efficiency in cyclical electronic systems. The output of an up/down counter may be used to set another parameter that effects the performance of the cyclical electronic system in order to enhance the performance of the cyclical electronic system.02-09-2012
20120007657DISCONNECTOR SWITCH FOR GALVANIC DIRECT CURRENT INTERRUPTION - A disconnecting apparatus for direct current interruption between a direct current source and an electrical device, in particular between a photovoltaic generator and an inverter, has a current-conducting mechanical switching contact and semiconductor electronics connected in parallel with the switching contact. The semiconductor electronics are non-conducting when the switching contact is closed, wherein a control input of the semiconductor electronics is wired with the switching contact in such a way that, when the switching contact opens, an arc voltage generated as a result of an arc via the switching contact switches the semiconductor electronics to become conducting.01-12-2012
20090108910Very low power consumption solid state relay - A normally closed solid state power relay with an optionally optically coupled input circuit at an input terminal with a driver circuit electrically coupled to input terminal to drive one or more a power transistors, preferably MOSFET transistors so that the power transistor is held in the on state by the driver when no voltage or a low level voltage is applied to the input terminal, and the power transistor is held in the off state by the driver when a high level voltage is applied to the input terminal. An energy storage device, a battery or capacitor, is coupled to the driver to powers the driver with the energy storage device being charged by energy from the input terminal when said input terminal when a high level voltage is applied to the input terminal. The energy storage device is charged by leakage current through a diode or through a resistor from the input circuit when the input circuit is in a high state.04-30-2009
20110291739MULTI-USE INPUT - Interfaces for coupling an electronic device to a power source control element and devices therefrom are provided. An interface includes a single node that is configured to receive a state signal and a serial communication signal from the electronic device. The interface also includes a switch circuit that is configured for providing a control signal for the power source control element based on the state signal, the switch signal capable of being influenced by the receipt of the state signal and the serial communication signal at the single node. The interface further includes a switch buffer circuit coupling the single node to the switch circuit, the switch buffer circuit comprising an impedance network configured to prevent the serial communication signal from activating the switch circuit.12-01-2011
20100176868TIME INTERLEAVED TRACK AND HOLD - The present application relates to an apparatus comprising a first transistor element, with at least three terminals, and at least one switching unit. The present application relates also to a method, computer readable medium having a computer program stored thereon and a track and hold circuit comprising the apparatus. The apparatus comprises a first transistor element with at least three terminals, wherein a first terminal is supplied with a first voltage, and wherein a second terminal is supplied with a second voltage. The apparatus comprises a first switching unit, wherein a third terminal is connected to ground potential via the first switching unit. The transistor element comprises a predefined threshold voltage. The first voltage and the second voltage are predefined alternating voltages. The transistor element is configured such that in case a differential voltage between the first predefined alternating voltage and the second predefined alternating voltage is higher than the predefined threshold voltage and the first switching unit is not conductive the third terminal is charged with the first predefined alternating voltage.07-15-2010
20090128220ISOLATION CIRCUIT - An isolation circuit is provided. The isolation circuit is coupled between a master circuit and a slave circuit for isolating or conducting an inter integrated circuit (I2C) signal. While the master circuit has electricity and the slave circuit does not, the isolation circuit isolates the master circuit to prevent the I2C signal being transmitted to the slave circuit. While the master circuit and the slave circuit have electricity, the isolation circuit conducts the master circuit to transmit the I2C signal to the slave circuit. The present invention solves the signal isolation problem between the master and slave circuits, and also improves the operational stability of an I2C bus.05-21-2009
20110260776SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a power phase period when in normal operation, switch portions SW10-27-2011
20110169550Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink - A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.07-14-2011
20100085106Method for Operating a Converter Circuit with Voltage Boosting - Method for operating a converter circuit with voltage boosting with N half-bridges, which in each case can be connected by their center connection to a phase of an N-phase generator and at an end side are connected in parallel with a series circuit formed by two capacitances, wherein each half-bridge contains a Top switch and a Bot switch, in which, in a PWM method with a fixed period duration at the beginning of the period duration, all the TOP switches are simultaneously switched on for the duration of a TOP switched-on interval. After half the period duration all the BOT switches are simultaneously switched on for the duration of a BOT switched-on interval wherein the TOP switched-on interval, and the BOT switched-on interval amount at most to half the duration of the period.04-08-2010
20090212846Insulated gate field effect transistors - A field transistor is divided into a number of cells (08-27-2009
20110169549ELECTRONIC DEVICES AND COMPONENTS FOR HIGH EFFICIENCY POWER CIRCUITS - An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package.07-14-2011
20090289692Nagative voltage switch - A negative voltage switch includes a switch unit, a voltage level converting circuit, and a discharge circuit. The switch unit has an input terminal for receiving a negative input voltage and an output terminal coupled to a load. The voltage level converting circuit receives a control signal and switches the switch unit to a first state or a second state according to the control signal. The switch circuit is switched to the first state if the level of the control signal is higher than a predetermined level and is switched to the second state if the level of the control signal is lower than the predetermined level, and the predetermined level is higher than the level of the negative input voltage.11-26-2009
20130099851SEMICONDUCTOR DEVICE HAVING STRAIN MATERIAL - A semiconductor device having strain material is disclosed in a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to the first cell. The second cell includes a second gate between a second drain and a second source. The semiconductor device further includes a shallow trench isolation area between the first source and the second source. A first amount of strain material over the first source and over the second source is greater than a second amount of strain material over the first drain and over the second drain.04-25-2013
20120032729METHOD AND APPARATUS FOR PROTECTING TRANSISTORS - The invention relates to a method and to an apparatus for protecting transistors (S02-09-2012
20130214846SEMICONDUCTOR DEVICE - The disclosed invention provides a semiconductor device capable of suitably controlling the level of an enable signal to resolve NBTI in a PMOS transistor. An input node receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby. A detection unit receives a signal through the input node and outputs an enable signal. The detection unit sets the enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period. A signal transmission unit includes a P-channel MOS transistor and transmits a signal input to the input node according to control by the enable signal.08-22-2013
20120062310SYSTEM AND METHOD FOR CHARGE CONTROL IN A MEMS DEVICE - An electromechanical device is disclosed. The device includes a variable capacitor, and a switch circuit configured to pre-charge an input node with a pulse charge at said selected voltage level. The switch circuit includes only a first switch coupled to the variable capacitor and the first switch is configured to respond to an enable signal having a duration shorter than a mechanical time constant of the variable capacitor and the first switch is configured to apply the selected voltage level across the variable capacitor to cause the pulse charge to accumulate on the variable capacitor.03-15-2012
20090128219SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AND INFORMATION PROCESSING DEVICE - A semiconductor device (05-21-2009
20090128221METAL-INSULATOR-METAL (MIM) SWITCHING DEVICES - A gated nano-electro-mechanical (NEM) switch employing metal-insulator-metal (MIM) technology and related devices and methods which can facilitate implementation of low-power, radiation-hardened, high-temperature electronic devices and circuits. In one example embodiment a gate electrode is configured as a cantilever beam whose free end is coupled to a MIM stack. The stack moves into bridging contact across a source and drain region when the applied gate voltage generates a sufficient electrostatic force to overcome the mechanical biasing of the cantilever beam. A second set of contacts can be added on the cantilever beam to form a complementary switching structure, or to a separate cantilever beam. The switching can be configured as non-volatile in response to stiction forces. NEM circuits provide a number of advantages within a variety of circuit types, including but not limited to: logic, memory, sleep circuits, pass circuits, and so forth.05-21-2009
20110227631Zero Power Drain Pushbutton Controls - A plurality of normally-open pushbutton switches are coupled to and cooperate with a pair of MOSFETs to provide each pushbutton switch of the plurality of pushbutton switches with a power on switch function for a personal audio device that does not require power to be drawn from a power source to monitor each of the pushbutton switches or to identify which of the pushbutton switches was manually operated to power on the personal audio device while awaiting operation of one of the pushbutton switches to cause the personal audio device to be powered on.09-22-2011
20110227630SWITCHING DEVICE FOR ELECTRIC CIRCUIT - A switching device has a main IGFET having a Schottky barrier diode D09-22-2011
20110140763SPDT SWITCH FOR RADIO FREQUENCY SWITCHING AND METHOD FOR ENHANCING ISOLATION THEREOF - Provided is an SPDT switch having improved isolation characteristics in an RF band. The SPDT switch includes a serial switching unit, a current sink unit, a switching isolation unit, and a DC blocking unit. The serial switching unit includes first and second HBTs. The current sink unit sinks a current flowing from a common input terminal to each of first and second output terminals of the serial switching unit. The switching isolation unit causes an unselected output terminal of the first and second output terminals to be electrically isolated from the common input terminal when the serial switching unit operates. The DC blocking unit blocks a DC between the first HBT and the first output terminal and a DC between the second HBT and the second output terminal. Accordingly, it is possible to provide better insertion-loss and isolation characteristics in higher frequency bands than typical switches.06-16-2011
20090002055SEMICONDUCTOR DEVICE - A switching transistor has its drain and source respectively connected to a gate and a source of an output transistor for supplying output current to a load, and its gate connected to an internal grounding wire GW to be connected to a grounding terminal GND. A resistance element R01-01-2009
20090108911ANALOG SWITCH - An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state.04-30-2009
20110102055LOW-SIDE DRIVER HIGH-VOLTAGE TRANSIENT PROTECTION CIRCUIT - A low-side driver circuit includes a low-side driver integrated circuit and a controllable switch. The low-side driver integrated circuit is responsive to an on-off command input signal to selectively operate in an ON mode and an OFF mode. The controllable switch is responsive to the on-off command signal to selectively operate in a CLOSED mode and an OPEN mode. The low-side driver integrated circuit and the controllable switch are configured to simultaneously operate in the ON mode and the CLOSED mode, respectively, and in the OFF mode and the OPEN mode, respectively. During a voltage transient the potential will be realized across the controllable switch, thus protecting the lower voltage rated low-side integrated circuit.05-05-2011
20090121776Bus switch and electronic switch - A bus switch for connecting and disconnecting a bus connection provided by a pair of buses includes a first switching element and a second switching element. The first switching element is coupled between an input terminal and an output terminal of a high-potential side bus of the pair of buses. The second switching element is coupled between an input terminal and an output terminal of a low-potential side bus of the pair of buses. The bus connection is connected when the first switching element and the second switching element are activated, and the bus connection is disconnected when the first switching element and the second switching element are deactivated.05-14-2009
20090079490Circuit Configuration with an End Stage for Switching an Inductive Load - A circuit configuration includes an output stage having at least one inductive load and a switching transistor configuration for switching the at least one inductive load. A supply voltage has a first supply potential and a second supply potential for feeding the supply voltage to the output stage. A registering device registers a particular instance when a potential at a specific circuit node of the output stage is outside a potential range defined by the first and second supply potentials.03-26-2009
20090079491SWITCHING CIRCUIT HAVING LOW THRESHOLD VOLTAGE - A switching circuit for preventing malfunction of a switching device formed of a wide band-gap semiconductor used for switching a high-power main power supply includes a normally-off type FET having a gate electrode, a source electrode connected to the ground, and a drain electrode connected to a power supply potential Vdd, and a normally-on type FET having drain and source electrodes connected to the gate and source electrodes of the FET, respectively, and a gate electrode. In the absence of any power supply, the normally-on type FET turns on. As a result, the gate/source potential of FET attains to 0V, and FET is kept off.03-26-2009
20130187703SYMMETRICALLY OPERATING SINGLE-ENDED INPUT BUFFER DEVICES AND METHODS - Embodiments are described including those pertaining to an input buffer having first and second complementary input terminals. One example buffer has a symmetrical response to a single input signal applied to the first input terminal by mimicking the transition of a signal applied to the second input terminal in the opposite direction. The buffer includes two amplifier circuits structured to be complementary with respect to each other. Each of the amplifier circuits includes a first transistor having a first input node that receives an input signal transitioning across a range of high and low voltage levels, and a second transistor having a second input node that receives a reference signal. The first input node is coupled to the second transistor through a capacitor to mimic the second input node transitioning in the direction opposite to the transition of the input signal.07-25-2013
20090295456SWITCHING CIRCUIT AND IMAGING APPARATUS UTILIZING THE SAME - In a complementary-MOSFET driving circuit for driving the charge multiplication gate of an EM-CCD, a ferrite bead is connected to a conduction-termination direction diode in parallel thereto, the conduction-termination direction diode being inserted into the gate electrodes of complementary MOSFETs in series therewith, the impedance of the ferrite bead at a switching frequency being lower than one-half of the gate-electrode impedance of the MOSFETs, a time during which the MOSFETs are brought into simultaneous conduction being shorter than ¼th of the switching period, the impedance of the ferrite bead at a frequency equivalent to ¼th of the switching period being higher than 2 times the gate-electrode impedance of the MOSFETs, a ferrite bead being connected to the drain electrodes of the complementary MOSFETs in series therewith, the impedance of the ferrite bead at the switching frequency being lower than one-half of the impedance of a capacitive load at the switching frequency, and the impedance of the ferrite bead, at a frequency equivalent to ¼th of the switching period being higher than 2 times the impedance of the capacitive load.12-03-2009
20100237929VOLTAGE GENERATING CIRCUIT FOR ELECTROSTATIC MEMS ACTUATOR - A plurality of capacitors each of which has a first and a second electrode. A plurality of first switches is connected between the first electrodes of the plurality of capacitors and a first power supply. A plurality of second switches is connected between the second electrodes of the plurality of capacitors and a second power supply. A plurality of resistances each of which is connected between the first electrode of one of the plurality of capacitors and the second electrode of another capacitor and which connect the plurality of capacitors in series, a voltage for driving an actuator being output from the last stage of the plurality of capacitors connected in series.09-23-2010
20100225379ANALOG SWITCH - An analog switch including at least one first MOS transistor capable of transferring a signal from a first terminal to a second terminal; a connection circuit for bringing a substrate terminal of the first transistor to a voltage which is a function of the voltages of the first and second terminals; and a circuit for controlling a control voltage of the first transistor with the signal.09-09-2010
20100225378RADIO FREQUENCY SWITCHING CIRCUIT AND SEMICONDUCTOR DEVICE - A radio frequency switching circuit includes: a first switching element; a second switching element; a first biasing resistive element connected to a control terminal of the first switching element; a second biasing resistive element connected to a control terminal of the second switching element; and a control circuit which controls the first switching element and the second switching element according to a control signal being output from a control signal output terminal. C09-09-2010
20110057715HIGH BANDWIDTH SWITCH DESIGN - An analog switch includes a transistor having a current path between an input and an output, a gate coupled to a control terminal, and a bulk terminal, and a switched bulk control circuit coupled to the control terminal, the bulk terminal, and ground to reduce an equivalent capacitance seen from a source terminal or drain terminal of the transistor towards the bulk terminal of the transistor. The bulk control circuit includes an all-NMOS bulk control circuit if an NMOS transistor switch is used.03-10-2011
20110057714High Voltage Switch Utilizing Low Voltage MOS Transistors with High Voltage Breakdown Isolation Junctions - A high voltage switch having first and second states includes an input receiving an input voltage that is greater than a supply voltage. Each of first, second, and third MOS structures of a first conductivity type has a gate, a source, and a drain. The sources and drains of each of the MOS structures are electrically coupled in series between the input and ground. An output is electrically coupled to the input. When the switch is in the first state, the gate of the first MOS structure is pulled to ground, the gate of the second MOS structure is pulled to the supply voltage, and the gate of the third MOS structure is pulled to a voltage greater than the supply voltage and less than the input voltage. When the switch is in the second state, the gates of all of the MOS structures are pulled to the supply voltage.03-10-2011
20090284303CONTROL CIRCUITS AND METHODS FOR CONTROLLING SWITCHING DEVICES - An integrated circuit is disclosed. The integrated circuit includes first and second transistors, first and second diodes, a first pin connected to the first transistor, a second pin connected to the second transistor, a third pin connected to the first diode, and a fourth pin connected to the second diode.11-19-2009
20100301922FIELD EFFECT TRANSISTOR WITH INTEGRATED GATE CONTROL AND RADIO FREQUENCY SWITCH - A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.12-02-2010
20110121885Current reference source circuit that is independent of power supply - A current reference source circuit that is independent of power supply which is used for producing a current reference source that is independent of power supply, the circuit at least includes a resistor Rs and a mirror image circuit which is formed with four MOSs, M05-26-2011
20110241756FAST TIME-TAGGED EVENT DETECTION USING RESISTIVE SWITCHING DEVICES - A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by means of an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event.10-06-2011
20120242397POWER DOWN ENABLED ANALOG SWITCH - This document discusses, among other things, apparatus and methods for passing a signal in a power down state. An example switch device can include a first depletion-mode transistor configured to pass an analog signal between a first node and a second node in a first state and to isolate the first node from the second node in a second state, a control circuit coupled to a control node of the first depletion-mode transistor and configured to isolate the control node from a first supply input in the first state and to couple the control node to the first supply input in the second state, and a tracking circuit configured to couple the control node of the first depletion-mode transistor to the first node during the first state and to isolate the control node of the first depletion-mode transistor from the first node in the second state.09-27-2012
20110068852SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE - The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.03-24-2011
20110148506INTEGRATION OF MOSFETS IN A SOURCE-DOWN CONFIGURATION - An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a “source-down” configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch.06-23-2011
20110248771INVERSE-MODE BIPOLAR TRANSISTOR RADIO-FREQUENCY SWITCHES AND METHODS OF USING SAME - The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (“RF”) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel.10-13-2011
20080252359SWITCH CONTROL CIRCUIT FOR EXTERNAL HARD DISK - A switch control circuit includes a N-channel MOSFET, a first bleeder unit, a P-channel MOSFET and a second bleeder unit. The N-channel MOSFET has a first input terminal, a first output terminal and a first control terminal. The first output terminal is connected to ground. The first bleeder unit has a voltage-dividing function to the voltage from an input and output interface of a computer. The first bleeder unit is connected with the first control terminal and the first output terminal of the N-channel MOSFET. The P-channel MOSFET has a second input terminal, a second output terminal and a second control terminal. The second output terminal is connected to the working voltage terminal of the external hard disk. The second bleeder unit is connected between the external power supply and the first input terminal of the N-channel MOSFET. The P-channel MOSFET is connected with the first bleeder unit.10-16-2008
20100277219Clock Gater with Test Features and Low Setup Time - A clock gater circuit comprises a plurality of transistors having source-drain connections forming a stack between a first node and a supply node. A given logical state on the first node causes a corresponding logical state on an output clock of the clock gater circuit. In one embodiment, a first transistor of the plurality of transistors has a gate coupled to receive an enable input signal. A second transistor is connected in parallel with the first transistor, and has a gate controlled responsive to a test input signal to ensure that the output clock is generated even if the enable input signal is not in an enabled state. In another embodiment, the plurality of transistors comprises a first transistor having a gate controlled responsive to a clock input of the clock gater circuit and a second transistor having a gate controlled responsive to an output of a delay circuit. The delay circuit comprises at least one inverter, wherein an input of the delay circuit is the clock input, and wherein a first inverter of the delay circuit is coupled to receive a test input signal and is configured to force a first logical state on an output of the first inverter responsive to an assertion of the test input signal.11-04-2010
20100321090SYSTEM AND CIRCUIT FOR A VIRTUAL POWER GRID - A system and circuit for virtual power grid is disclosed. In one embodiment, a switch system for a virtual power grid includes a first transistor for connecting a power supply to a node of a virtual power grid for an isolated region of circuitry via the first transistor upon a receipt of a first control signal to turn on the first transistor. The switch system further includes a second transistor for connecting the power supply to the isolated region of circuitry via the second transistor upon a receipt of a second control signal to turn on the second transistor. In addition, the switch system includes a self-timed enable module for generating and forwarding the second control signal when a voltage level at the node of the virtual power grid which is charged by the power supply via the first transistor reaches a threshold voltage.12-23-2010
20110025403SWITCH WITH IMPROVED BIASING - Switches with improved biasing and having better isolation and reliability are described. In an exemplary design, a switch is implemented with a set of transistors, a set of resistors, and an additional resistor. The set of transistors is coupled in a stacked configuration, receives an input signal, and provides an output signal. The set of resistors is coupled to the gates of the set of transistors. The additional resistor is coupled to the set of resistors and receives a control signal for the set of transistors. The resistors reduce signal loss through parasitic capacitances of the transistors when they are turned on. The resistors also help split the signal swing of the input signal approximately evenly across the transistors when they are turned off, which may improve reliability of the transistors. The switch may be used in a switchplexer, a power amplifier (PA) module, etc.02-03-2011
20110133816SWITCH-BODY PMOS SWITCH WITH SWITCH-BODY DUMMIES - An analog sample-and-hold switch has parallel branches extending from an input node to an output node connected to a hold capacitor, each branch having a PMOS signal switch FET in series with a PMOS dummy FET. A sample clock controls on-off switching of the PMOS signal switch FETs, and an inverse of the sample clock controls a complementary on-off switching of the PMOS dummy FETs. A bias sequencer circuit biases the PMOS signal switch FETs and biases the PMOS dummy FETs, in a complementary manner, synchronous with their respective on-off states. The on-off switching of the PMOS dummy FETs injects charge cancelling a charge injection by the PMOS signal switch FETs, and injects glitches cancelling glitches injected by the PMOS signal switch FETs.06-09-2011
20110260775NANOSCALE VARIABLE RESISTOR/ELECTROMECHANICAL TRANSISTOR - A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e10-27-2011
20100214005Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors - Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.08-26-2010
20100194464Method and Circuit for Protecting a MOSFET - An integrated circuit includes a transistor. During operation a current slew-rate is determined based on a duration the transistor has been conducting and a current flowing through the transistor. The transistor can then be controlled to switch to its non-conducting state using the slew-rate.08-05-2010
20110148505SOLID-STATE ALTERNATING CURRENT (AC) SWITCH - A solid-state alternating current (AC) switch provides for the sequential turn-on of the associated solid-state switches to reduce the generation of electromagnetic interference (EMI). The solid-state AC switch includes at least first and second solid-state switches connected in series between an AC input and an AC load. A zero-cross detector circuit monitors the AC input to determine zero-crossings associated with the monitored AC input. A controller turns on the first solid-state switch and the second solid-state switch according to a turn-on sequence in which the first transistor is turned ON during a detected zero-crossing window associated with the first transistor and the second transistor is subsequently turned ON during a detected zero-crossing associated with the second transistor.06-23-2011
20100026372Power switch for transmitting a power source of low voltage between regular mode and deep-power-down mode - A low-voltage power switch includes a gate-controlled circuit and a switch. The gate-controlled circuit generates a control voltage lower than the voltage of ground according to a control signal. The switch includes a first end, a second end, and a control end. The first end of the switch is coupled to a power supply of a low voltage, the control end of the switch is coupled to the gate-controlled circuit for receiving the gate-controlled signal, and the second end of the switch couples the first end of the switch when the switch receives the gate-controlled signal for outputting the power supply of the low voltage.02-04-2010
20100019829TURN ON-OFF POWER CIRCUIT FOR DIGITAL SYSTEMS - A turn-on circuit that is used to provide power to a system or other circuit when activated. The circuit is activated through depression of a momentary button or other similar device. The circuit is deactivated by a separate digital signal from said system or said other circuit and when deactivated no longer provides power to the system.01-28-2010
20110057716Circuit of Reducing Power Loss of Switching Device - A circuit is provided to reduce power loss on switching. A pair of auxiliary switching devices is switched on before a pair of switching devices. The switching devices are switched on after a corresponding capacitor to the auxiliary switching devices is discharged to zero. Thus, the power loss of the switching devices is reduced.03-10-2011
20090102541SWITCHING CIRCUIT ARRANGEMENT - A switching circuit arrangement (04-23-2009
20110304382Semiconductor device and data processing system - A semiconductor device comprises a first sense amplifier, first to third transmission lines, and first to third switches. The first and second transmission lines are connected to the first sense amplifier. The first and third switches control connections of the first to third transmission lines, and the second switch controls a connection between a fixed potential and third transmission line. When the second transmission line is not accessed, the first and third switches are brought into a non-conductive state and the second switch is brought into a conductive state, and the fixed potential is supplied to the third transmission line, thereby suppressing influence of the coupling noise between the transmission lines.12-15-2011
20120306561I/O CIRCUIT AND INTEGRATED CIRCUIT - An I/O circuit includes: a boost module, a P path, an N path, a PMOS driving transistor, and an NMOS driving transistor, where: a rising edge of an output signal of a non-inverting port of the boost module is slower than a falling edge; a grid electrode of the PMOS driving transistor is connected to the non-inverting port of the boost module via the P path and a grid electrode of the NMOS driving transistor is connected to an inverting port of the boost module via the N path; and the P path includes an odd number of inverters connected in series and the N path includes an even number of inverters connected in series. The present invention also provides an integrated circuit.12-06-2012
20120306563SWITCHING CIRCUIT - A switching circuit according to one embodiment is a switching circuit including at least one semiconductor switch element having an input, output, and a common terminals, a pulse-like signal being applied between the input and common terminals to switch a current between the output and common terminals. The switching circuit further includes a capacitance suppression element section connected at least one of between the input and output terminals, between the input terminal common terminals, and between the output and common terminals. The capacitance suppression element section reduces a parasitic capacitance between the terminals of the semiconductor switch element where the capacitance suppression element section is connected to less than that obtained when the capacitance suppression element section is not connected at a frequency N times (N is an integer of 1 or more) as high as a clock frequency of the pulse-like signal.12-06-2012
20120306562MEMS DISPLAY PIXEL CONTROL CIRCUITS AND METHODS - This disclosure provides novel latching circuits, and pixel circuits and display devices that include such latching circuits. The latches herein include a switch positioned on an inverter coupling interconnect which couples two cross-coupled inverters of the latch. The switch is configured to control a passage of a current between the first and second inverters. By switching the switch OFF at a time a data voltage is transferred to the inverters, any leak current between the inverters can be interrupted. As a result, a malfunctioning of the data latch is prevented.12-06-2012
20120038411HIGH-FREQUENCY SWITCH - According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.02-16-2012
20120038410CIRCUIT AND METHOD FOR CHARACTERIZING THE PERFORMANCE OF A SENSE AMPLIFIER - An integrated circuit includes a sensing circuit, a fuse box, and a fuse bus decoder. The sensing circuit includes an output node, and the fuse box includes a plurality of switches coupled in series with a plurality of resistive elements. The fuse box is coupled to the output node of the sensing circuit from which the fuse box is configured to receive a current. The fuse bus decoder is coupled to the fuse box and includes at least one demultiplexer configured to receive a signal and in response output a plurality of control signals for selectively opening and closing the switches of the fuse box to adjust a resistance across the fuse box. A voltage of the output node of the sense amplifier is based on a resistance the fuse box and the current.02-16-2012
20090278590POWER SEQUENCE CONTROL CIRCUIT, AND GATE DRIVER AND LCD PANEL HAVING THE SAME - A power sequence control circuit receives an input positive voltage and an input negative voltage. The control circuit includes a pull-up stage, having a first terminal receiving the input positive voltage, a second terminal coupled to a node, and a control terminal receiving feedback of an output positive voltage. A pull-down stage has a first terminal coupled to the node and a second terminal coupled to an output negative voltage. A current-limit switching unit has a first terminal receiving the input positive voltage, a second terminal outputting the output positive voltage, and a control terminal coupled to the node. When the output negative voltage decreases, and if the pull-down stage decreases a control voltage at the node and the control voltage is less than a threshold value, the current-limit switching unit is conducted to transmit the input positive voltage as the output positive voltage.11-12-2009
20120056660SWITCH CIRCUIT - A signal line from a common terminal, which allows the insertion of a terminal of a cable for transmitting high-frequency signals or the insertion of a terminal of a cable dedicated to the transmission of audio signals, is branched into one line which is connected to one end of a high-frequency signal switch (USB switch) and the other line which is connected to one end of an audio signal switch (audio switch), respectively. A signal line from the other end of the high-frequency signal switch is connected to a target circuit. A signal line from the other end of the audio signal switch in a primary hierarchical position is branched into a plurality of lines, and the respective plurality of lines are connected to one end of audio signal switches (e.g., headphone switch and microphone switch) in a secondary hierarchical position. And the respective signal lines from the other end of the plurality of audio signal switches of secondary hierarchical position are connected to respective target circuits.03-08-2012
20120206187SEMICONDUCTOR DEVICE - A semiconductor device that makes isolation circuits unnecessary and that also resolves the problem of through-current flowing during power supply shutdown transitions and during power supply recovery and that even flows between the regions during power shutdown. A semiconductor device of the present invention including a first power supply line, and a second power supply line coupled to a first power supply line by way of a first switch, a macro cell containing a macro cell core coupled to the second power supply line, and a third power supply line coupled by way of a second switch to a first power supply line, and a circuit block coupled to the third power supply line and also coupled to at least either the macro cell core input or output; and the second power supply line is coupled to the third power supply line.08-16-2012
20120062309POWER SUPPLY CIRCUIT - A power supply circuit for protecting a battery from current leakage when the battery is not in use includes a control signal input circuit and a switch circuit. The control signal input circuit receives a first control signal from a chip and output a second control signal. The switch circuit receives the second control signal and turns on or off an electronic connection between the battery and the chip. Wherein when the battery is not in use and not being charged by the adaptor, there is a possibility of current leakage from the battery. In such case, the switch circuit turns off the electronic connection between the battery and the chip, and the battery does not provide power to the chip.03-15-2012
20120119817POWER CONTROL MODULE - A power control module including a socket, a switch circuit and an interface control circuit is provided. A plug is adapted to be inserted into the socket, and the socket has a positive terminal, a first negative terminal and a second negative terminal. When the plug is inserted into the socket, a negative terminal of the plug sequentially contacts the first negative terminal and the second negative terminal. The switch circuit receives a power voltage through the positive terminal. The interface control circuit determines whether to generate a switching signal to the switch circuit according to a voltage level of the second negative terminal. When receiving the switching signal, the switch circuit outputs the power voltage.05-17-2012
20120119816VARIABLE-WIDTH POWER GATING MODULE - A semiconductor device includes a primary voltage rail, a secondary voltage rail, a plurality of transistors coupled between the primary and secondary voltage rails, and control logic operable to enable a first subset of the plurality of transistors to couple the primary voltage rail to the secondary voltage rail. During a steady state condition, the first subset comprises less than all of the plurality of transistors.05-17-2012
20120161851HIGH BANDWIDTH SWITCH DESIGN - An analog switch includes a transistor having a current path between an input and an output, a gate coupled to a control terminal, and a bulk terminal, and a switched bulk control circuit coupled to the control terminal, the bulk terminal, and ground to reduce an equivalent capacitance seen from a source terminal or drain terminal of the transistor towards the bulk terminal of the transistor. The bulk control circuit includes an all-NMOS bulk control circuit if an NMOS transistor switch is used.06-28-2012
20120313689LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A low voltage isolation circuit is coupled between an input terminal for receiving a high voltage signal and an output terminal for transmitting the high voltage signal to a load. The isolation circuit includes a driving block; having a first driving transistor coupled between a first voltage reference and an intermediate node and a second driving transistor coupled between the intermediate node and a second voltage reference; an isolation block connected between the input and output terminals and, through a protection block to the intermediate node. The protection block includes first and second protection transistors (MD12-13-2012
20120249215SWITCH CIRCUIT - A switch circuit for switching between a first storage and a second storage. The switch circuit includes a switch, a control circuit, a switch control chip, and a processing chip. The control circuit is connected to the switch, the first storage, and the second storage. The control circuit either transmits power from a power supply to the first or second storage according to the switch. The switch control chip is connected to the control circuit. The processing chip is connected to the switch control chip. The control circuit controls the switch control chip to either transmit data between the processing chip and the first storage in response to the power supply powering the first storage, or transmit data between the processing chip and the second storage in response to the power supply powering the second storage.10-04-2012
20090058500BIDIRECTIONAL SWITCH MODULE - A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit.03-05-2009
20090058501SEMICONDUCTOR DEVICE - A semiconductor device includes an input terminal, a first aging device whose source is connected to the input terminal to turn on at τ03-05-2009
20120169398Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink - A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.07-05-2012
20120075004SWITCH AND METHOD OF CONTROL THE SAME - A switch includes, a common terminal, a first terminal, a second terminal, a first FET having a first source, a first drain and a first gate, one of the first source and the first drain being coupled to the common terminal, the other of the first source and the first drain being coupled to the first terminal, and a second FET having a second source, a second drain and a second gate, one of the second source and the second drain being coupled to the common terminal, the other of the second source and the second drain being coupled to the second terminal. The first FET is controlled to a turn-off state by an absolute voltage of the first gate which is smaller than an absolute voltage of the second gate to control a turning-off state for the second transistor.03-29-2012
20100007401SWITCH CONTROL CIRCUIT - A switch control circuit for controlling a bridge circuit comprising: an upper and a lower transistor, connected to a positive and a negative voltage, respectively, and comprising a flywheel diode connected in parallel with each transistor. An LC-circuit filters the voltage from the junction of the transistors. A drive circuit controls each transistor in order to switch off the corresponding switch element when a reference current has been obtained in the inductor and for switching on the corresponding switch element when the current in the inductor is essentially zero. A first timer circuit is arranged for preventing the on-switch of the switch element until a minimum time period has passed.01-14-2010
20120256678Variable Impedance Single Pole Double Throw CMOS Switch - A single pole double throw (SPDT) semiconductor switch includes a series connection of a first transmitter-side transistor and a first reception-side transistor between a transmitter node and a reception node. Each of the two first transistors is provided with a gate-side variable impedance circuit, which provides a variable impedance connection between a complementary pair of gate control signals. Further, the body of each first transistor can be connected to a body bias control signal through a body-side variable impedance circuit. In addition, the transmitter node is connected to electrical ground through a second transmitter-side transistor, and the reception node is connected to electrical ground through a second reception-side transistor. Each of the second transistors can have a body bias that is tied to the body bias control signals for the first transistors so that switched-off transistors provide enhanced electrical isolation.10-11-2012
20090021294Driving device of voltage drive type semiconductor device - A driving device 01-22-2009
20120262221LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A low voltage isolation switch is coupled between an input terminal suitable for receiving a high voltage signal and an output terminal suitable for transmitting this high voltage signal to a load. The isolation switch includes a first driving transistor coupled between a first reference terminal and an intermediate node, a second driving transistor coupled between the intermediate node and the second reference terminal, a control transistor connected across a diode block coupled between the input and output terminals. The control transistor has a control terminal connected to the intermediate node through a low voltage decoupling block that includes first and second substrate terminals, first and second parasitic capacitive element connected to these first and second substrate terminals, and first and second decoupling transistors coupled in parallel to each other and having control terminals connected to the first and second parasitic capacitive elements, respectively.10-18-2012
20120299636Power gating circuit - A functional circuit is coupled to a power supply conductor by at least one power gating transistor. A switching device applies a gate drive voltage to a gate terminal of the power gating transistor via a resistive element. The power gating transistor provides a Miller capacitance between its drain and gate terminals. The Miller capacitance, the resistance of the resistive element, and the drive strength of the switching device are configured such that, in response to the switching device switching the gate drive voltage to allow more current to pass through the power gating transistor, the Miller capacitance provides a feedback mechanism competing against the switching device to reduce the slew rate of the gate drive voltage such that the current passing between the power gate supply conductor and the functional circuit through the power gating transistor is less than the saturation current of the power gating transistor.11-29-2012
20100327947Circuit and Method for Controlling the Secondary FET of Transformer Coupled Synchronous Rectified Flyback Converter - A secondary FET12-30-2010
20110279167INPUT/OUTPUT CIRCUIT AND SYSTEM - An input/output circuit has a first load having one end coupled to a first standard voltage line, a first MOS transistor having a drain electrode coupled to another end of the first load, a second load having one end coupled to the first standard voltage line, a second MOS transistor having a drain electrode coupled to another end of the second load, a third MOS transistor having a source electrode each of which is coupled to source electrodes of the first and second MOS transistors, a first constant-current source coupled between the source electrode of the first MOS transistor and a second standard voltage line, and a second constant-current source coupled between the source electrode of the second MOS transistor and the second standard voltage line. The circuit size is reduced by transmitting a differential signal or a single-ended signal using a single input/output circuit.11-17-2011
20120133421POWER SUPPLY SWITCH APPARATUS - A power supply switch apparatus includes a main outlet, first and second load outlets, a manual switch, and first and second electronic switches. The positive terminal of the main outlet is connected to the positive terminal of the first load outlet and connected to the second terminal of the first electronic switch. The third terminal of the first electronic switch is connected to the positive terminal of the second load outlet. The first terminal of the first electronic switch is connected to the second terminal of the second electronic switch and connected to a voltage terminal through a first resistor. The third terminal of the second electronic switch is grounded. The first terminal of the second electronic switch is connected to the voltage terminal through the manual switch and a second resistor in that order, and grounded through a third resistor.05-31-2012
20130015905Nested Composite Switch - There are disclosed herein various implementations of nested composite switches. In one implementation, a nested composite switch includes a normally ON primary transistor coupled to a composite switch. The composite switch includes a low voltage (LV) transistor cascoded with an intermediate transistor having a breakdown voltage greater than the LV transistor and less than the normally ON primary transistor. In one implementation, the normally on primary transistor may be a group III-V transistor and the LV transistor may be an LV group IV transistor.01-17-2013
20110273224COMPLEMENTARY HIGH VOLTAGE SWITCHED CURRENT SOURCE INTEGRATED CIRCUIT - A complementary high voltage switched current source circuit has a complementary current source pair, wherein a first of the current source pair is coupled to a positive voltage rail and a second of the current source pair is coupled to a negative voltage rail. A digital logic-level control interface circuit is coupled to the complementary current source pair and to the positive voltage rail and the negative voltage rail. A pair of high voltage switches is coupled to the complementary current source pair and the digital logic-level control interface circuit and controlled by the digital control interface circuit.11-10-2011
20120249216HIGH VOLTAGE SWITCH CONFIGURATION - A High Voltage switch configuration having an input terminal which receives an input signal and an output terminal which issues an output signal to a load. The High Voltage switch configuration comprises at least a first and a second diode, being placed in antiseries between said input and output terminals and having a pair of corresponding terminals in common, in correspondence of a first internal circuit node.10-04-2012
20130093498MATRIX-STAGES SOLID STATE ULTRAFAST SWITCH - A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.04-18-2013
20130099850VOLTAGE SWITCH CIRCUIT - A voltage switch circuit uses PMOS transistors to withstand high voltage stress. Consequently, the NMOS transistors are not subject to high voltage stress. The lightly-doped PMOS transistors are compatible with a logic circuit manufacturing process. Consequently, the voltage switch circuit may be produced by a logic circuit manufacturing process.04-25-2013
20130127519Auto Switch Mosfet - In one preferred form shown in 05-23-2013
20130127518CONTROL CIRCUIT AND ELECTRONIC DEVICE - A control circuit includes: a first switching element having a source, a gate, and a drain; a battery configured to supply a voltage to the gate through a second switching element; a PWM signal generator circuit configured to supply a PWM signal to the gate through a third switching element; and a gate control circuit configured to, under a power-off condition, turn on the second switching element to supply the voltage of the battery to the gate and turns off the third switching element, and configured to under a power-on condition, turn on the third switching element to supply the PWM signal voltage to the gate and turns off the second switching element.05-23-2013
20130200941CASCADED HIGH VOLTAGE SWITCH ARCHITECTURE - Devices and circuits for high voltage switch (HVS) configurations. HVS may pass high voltage without suffering voltage drops. HVS may also guarantee safe operations for p-mos transistors. HVS may not sink current in its steady state. Further, HVS may select between two or more different voltage values to be passed onto the output node even after the high voltage has already been fully developed on the high voltage supply line.08-08-2013
20100315152CONTROL METHOD FOR SOFT SWITCH CIRCUIT IN SWITCH POWER SUPPLY - The present invention relates to a control method for a soft switch circuit in a switch power supply, which controls first and second main power switch devices to be turned on and turned off constantly to generate an alternating main power filter current, and controls forward and backward auxiliary switch devices to be turned on and turned off to generate an intermittent alternating resonant current across a resonant branch in the same direction as the main power filter current to thereby achieve zero-voltage turn-on of the first and second main power switch devices; and further controls the forward and backward auxiliary switch devices to be turned on and turned off to generate compensation currents across the resonant branch in the opposite direction to the alternating main power filter current in at least a period of time during resting of the resonant current to thereby accomplish a charging and discharging process of resonant capacitors in a dead time. Thus, a freewheeling diode can be turned on normally, so that it is possible to avoid a damage to the devices due to an impact current and a spark voltage resulting at zero crossing of the current in the soft switch circuit.12-16-2010
20130154718Fully Capacitive Coupled Input Choppers - A method of differential signal transfer from a differential input Vinp and Vinn having a common mode input voltage that can be higher than the power supply voltage by providing an input chopper having Vinp and Vinn as a differential input, providing an output chopper, capacitively coupling a differential output Voutp and Voutn of the input chopper to a differential input of the output chopper, capacitively coupling a clock to the input chopper and coupling the clock to the output chopper, the clock having a first phase and a second phase opposite from the first phase, the first phase being coupled to the gates of the first and second transistors and the second phase being coupled to the gates of the third and fourth transistors, and providing protection of the gates of the first through fourth transistors from excessive voltages. Various embodiments are disclosed.06-20-2013
20120086499LOW LEAKAGE DYNAMIC BI-DIRECTIONAL BODY-SNATCHING (LLDBBS) SCHEME FOR HIGH SPEED ANALOG SWITCHES - A bidirectional switch device includes a main pass field effect transistor (FET) connected to an input node and an output node. A body region of the first main pass transistor is tied to a voltage substantially halfway between the voltage at the input node side of the first main pass transistor and the voltage at the output node side of the transistor when the first main pass transistor is in an ON state.04-12-2012

Patent applications in class Insulated gate FET (e.g., MOSFET, etc.)

Patent applications in all subclasses Insulated gate FET (e.g., MOSFET, etc.)