Class / Patent application number | Description | Number of patent applications / Date published |
327432000 | With bipolar transistor | 23 |
20080238528 | MOSFET GATE INTERFACE - In some embodiments a power circuit includes a driver output, a MOSFET, and circuitry to ensure a full and fast positive drive to a gate of the MOSFET when the driver output goes to a high signal level, and to ensure a full and fast low negative drive to the gate of the MOSFET when the driver output goes to a low signal level. Other embodiments are described and claimed. | 10-02-2008 |
20090058499 | GATE DRIVING CIRCUIT AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET. | 03-05-2009 |
20090289691 | METHOD OF SWITCHING AND SWITCHING DEVICE FOR SOLID STATE POWER CONTROLLER APPLICATIONS - A solid state switching device (SSSD) for AC and DC high power solid state power controller includes, for DC applications, a MOSFET and an IGBT connected in parallel and an optional zener diode connecting a collector and a gate of the IGBT. For AC applications, the SSSD includes a “back to back” pair of MOSFETs connected in parallel with a pair of counter-parallel IGBTs, each in series with a diode, and, optionally, zener diodes “back to back” with conventional diodes connecting a collector and a gate of each of the IGBT. A method of switching establishes a sequence of turning on/off the MOSFET(s) and the IGBT(s) wherein the IGBT(s) turn on before and turn off after the MOSFET(s). A negative feedback prevents a voltage of SSSD rising above predetermined level. | 11-26-2009 |
20110181344 | HIGH POWER, HIGH SPEED SOLID STATE RELAY - Electrically isolating the gate terminals of a pair of semiconductor output devices increases the switching speed of a solid state relay. A time delay enables tuning of the isolated gate circuits facilitating simultaneous operation of the output devices. | 07-28-2011 |
20110298524 | POWER SWITCH CIRCUIT - A power switch circuit providing voltage to an output port is provided. The switch circuit includes a single power supply, a switch unit, a controlling unit, and a logic unit. The switch unit is connected between the single power supply and an output port and capable of being turned on and off alternatively for continuing or discontinuing power from the single power supply to the output port; the single power supply provides power to the output port. The controlling unit is configured for generating a voltage controlling signal and transmitting the voltage controlling signal to the logic unit. The logic unit receives and inverts the voltage controlling signal, and outputs the inverted voltage controlling signal to turn on or turn off the switch unit. | 12-08-2011 |
20110316609 | BIPOLAR JUNCTION TRANSISTOR TURN ON-OFF POWER CIRCUIT - An on-off power circuit connecting a voltage source to a digital system. The on-off power having a turn-on signal source, a control bipolar junction transistor, a switching bipolar junction transistor, a turn-off bipolar junction transistor, and a turn-off signal source. The circuit is activated by a turn-on signal and deactivated by a turn-off signal. | 12-29-2011 |
20120007656 | Radiation Tolerant Complementary Cascode Switch Using Non-Radiation Hardened Transistors - A power switching circuit designed for operating in a radiation environment using non-radiation hardened components is provided. The power switching circuit provides a high-voltage rated, non-radiation hardened N-channel FET (N-FET) controlled by a relatively small, low-voltage, non-radiation hardened P-channel FET (P-FET), while both devices are operating in a radiation environment. The P-FET device is drive by a sufficiently high drive voltage in order to overcome gate threshold shifts resulting from accumulated radiation damage. | 01-12-2012 |
20120139615 | CONTROL DEVICE FOR A MOTOR VEHICLE HAVING AN INPUT EQUIPPED FOR PROCESSING SIGNALS OF DIFFERENT TYPES OF SENSORS - A control device ( | 06-07-2012 |
20120176178 | SWITCH CIRCUIT CAPABLE OF PREVENTING VOLTAGE SPIKE, AND CONTROL METHOD AND LAYOUT STRUCTURE THEREOF - A switch circuit capable of preventing voltage spike, includes an input end for receiving an input voltage, an output end for outputting an output voltage, a switch unit for controlling an electrical connection between the input end and the output end according to a control signal, a protection unit for generating the control signal according to an input current passing through the input end, and a first parasitic transistor for controlling an electrical connection between a second end and a third end according to the control signal, wherein when the input current is greater than a threshold value, the switch unit turns off electrical connection between the input end and the output end according to the control signal, and the first parasitic transistor turns on electrical connection between the second end and the third end of first parasitic transistor according to the control signal to reduce variation of input current. | 07-12-2012 |
20120319758 | BI-FET CASCODE POWER SWITCH - Power switch devices for high-speed applications are disclosed. The power switch device includes a depletion mode field effect transistor (D-FET), an enhancement mode field effect transistor (E-FET) and a bipolar transistor. In one embodiment, the E-FET is coupled in cascode with the D-FET such that turning off the E-FET turns off the D-FET and turning on the E-FET turns on the D-FET. Furthermore, the bipolar transistor is operably associated with the D-FET and the E-FET such that turning on the bipolar transistor drives current from the D-FET through the bipolar transistor to the E-FET to provide a charge that turns on the E-FET. The bipolar transistor provides several advantages such as a higher Schottky breakdown voltage for the E-FET and faster current switching speed for the power switch device. | 12-20-2012 |
20130135031 | SWITCHING CIRCUIT FOR SWITCHING ELECTRIC POTENTIALS - The invention is directed to a switching circuit ( | 05-30-2013 |
20130154717 | SWITCHING CIRCUITS AND METHODS OF TESTING - A switching circuit for connection to a load and to a voltage source is provided. The switching circuit comprises: at least one switching devices for switching on and off power to the load a pulldown device for shorting out the load thereby isolating the load from the voltage source; and a controller operable while the load is shorted to activate at least one of the switching devices at a time, wherein a current passes through the or each activated switching device and is measurable to test whether the or each activated switching device is operating correctly. | 06-20-2013 |
20130234779 | SOLID STATE RELAY CIRCUIT - A solid state relay and method for enabling and disabling power to a load are disclosed. A fast turn-on circuit and fast turn-off circuit receive control signals in an isolated manner. The control signals allow only one of the fast turn-on circuit and fast turn-off circuit to be enabled at a time. A power switching circuit that enables power to be supplied to a load when the fast turn-on circuit is enabled and the fast turn-off circuit is disabled state, and disables the power from being supplied to the load when the fast turn-on circuit is disabled and the fast turn-off circuit is enabled. A power supply circuit provides isolated power used by the fast turn-on and fast turn-off circuits to drive or discharge a gate in the power switching circuit. | 09-12-2013 |
20140035656 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first switching element; a first interconnection; a first resistor; and a second interconnection. The first switching element includes a first control terminal, a first electrode terminal, and a first conductor terminal. The second switching element includes a second control terminal, a second electrode terminal, and a second conductor terminal. The first interconnection includes a first through a fourth interterminal interconnections. The first resistor is connected at a first end to the first control terminal. The second resistor is connected at a first end to the second control terminal and is connected at a second end to a second end of the first resistor. The second interconnection is provided between the first electrode terminal and the second electrode terminal and/or between the first control terminal and the second control terminal. | 02-06-2014 |
20140111270 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD FOR CONTROLLING THE SEMICONDUCTOR DEVICE - An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n | 04-24-2014 |
20140118055 | IGBT DIE STRUCTURE WITH AUXILIARY P WELL TERMINAL - An IGBT die structure includes an auxiliary P well region. A terminal, that is not connected to any other IGBT terminal, is coupled to the auxiliary P well region. To accelerate IGBT turn on, a current is injected into the terminal during the turn on time. The injected current causes charge carriers to be injected into the N drift layer of the IGBT, thereby reducing turn on time. To accelerate IGBT turn off, charge carriers are removed from the N drift layer by drawing current out of the terminal. To reduce V | 05-01-2014 |
20140145782 | HIGH FREQUENCY SWITCH - There is provided a high frequency switch including: a first signal transferring unit including a plurality of first switching devices and at least one first diode device individually connected to control terminals of the plurality of first switching devices to enable or block signal flow between a common port transmitting and receiving a first high frequency signal and a first port inputting and outputting the first high frequency signal; and a second signal transferring unit including a plurality of second switching devices and at least one second diode device individually connected to control terminals of the plurality of second switching devices to enable or block signal flow between the common port transmitting and receiving a second high frequency signal and a second port inputting and outputting the second high frequency signal. | 05-29-2014 |
20150303914 | SOLID-STATE REPLACEMENT FOR TUBE-BASED MODULATORS - Embodiments described herein include a solid-state switch tube replacement for the radar system such as, for example, the SPY-1 radar system. Some embodiments provide for a technology for the precision switching that enables IGBT power modules to operate robustly in a series configuration and/or a parallel configuration to produce precision switching at high voltage (e.g., 20 kV and above) and high frequencies (e.g., 1 MHz and above). | 10-22-2015 |
20160043713 | DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT AND SEMICONDUCTOR SWITCHING ELEMENT MODULE HAVING THE SAME - In a drive circuit, a threshold voltage control device is activated when a mode determination circuit determines a specific mode switching signal. The threshold voltage control device controls a threshold voltage of a comparator through a threshold voltage setting device to be sequentially changed in a period where a semiconductor switching element is turned on in a state where a constant current is externally supplied between conduction terminals of the semiconductor switching element. The threshold voltage control device stores data corresponding to the threshold voltage of a time point where an output signal of the comparator changes due to the threshold voltage being changed to a nonvolatile storage. The threshold voltage control device reads out the threshold voltage from the storage and permits the threshold voltage setting device to set the threshold voltage read out to the comparator, when the mode determination circuit determines a drive control signal. | 02-11-2016 |
20160056810 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a diode-integrated IGBT element in a same semiconductor substrate having a diode element and an IGBT element driven by a drive signal towards a gate; a sense element having a diode sense element with a current proportional to a current through the diode element and an IGBT sense element with a current proportional to a current through the IGBT element; a switch element connected to a first current pathway through the diode sense element and to a second current pathway different from the first current pathway. The switch element is turned off to control the second current pathway to be discontinuous with the first current pathway when no current flows through the diode sense element, and is turned on to control the second current pathway to be continuous with the first current pathway and apply a current when a current flows through the diode sense element. | 02-25-2016 |
20160072499 | SEMICONDUCTOR DEVICE - A semiconductor device, according to one possible configuration, includes switching circuits, each switching circuit comprising IGBT chips connected in series and clamping diodes. The semiconductor device also includes a first and a second wiring line and auxiliary emitter lines. The first wiring line and a first auxiliary emitter line connect the emitter terminals of IGBT chips of the first and second switching circuits. The second wiring line and another auxiliary emitter line connect the emitter terminals of the third IGBT chips of the first and second switching circuits. The wiring lines have a large current carrying capacity and a lower resistance value than their respectively connected auxiliary emitter line. | 03-10-2016 |
20160182034 | GATE DRIVE CIRCUIT AND METHOD OF OPERATING SAME | 06-23-2016 |
20160191046 | METHODS AND SYSTEMS FOR OPERATING HYBRID POWER DEVICES USING MULTIPLE CURRENT-DEPENDENT SWITCHING PATTERNS - An integrated circuit includes a hybrid switch having first and second switching devices of different type therein. A control circuit is provided, which is configured to drive the first and second devices with respective first and second control signals having first and second unequal duty cycles, respectively, when the first and second devices are supporting a forward current in a first current range. The control circuit is further configured to drive the first and second devices with respective third and fourth control signals having third and fourth unequal duty cycles, respectively, when the first and second devices are supporting a forward current in a second current range outside the first current range. The first duty cycle may be greater than the second duty cycle and the third duty cycle may be less than the fourth duty cycle. | 06-30-2016 |