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Field-effect transistor

Subclass of:

327 - Miscellaneous active electrical nonlinear devices, circuits, and systems

327365000 - GATING (I.E., SWITCHING INPUT TO OUTPUT)

327419000 - Utilizing three or more electrode solid-state device

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
327434000 Insulated gate FET (e.g., MOSFET, etc.) 158
327430000 JFET (i.e., junction field-effect transistor) 18
327432000 With bipolar transistor 12
327429000 Four or more electrode solid-state device 3
20090289690SEMICONDUCTOR DEVICE WITH SWITCH ELECTRODE AND GATE ELECTRODE AND METHOD FOR SWITCHING A SEMICONDUCTOR DEVICE - A semiconductor device with switch electrode and gate electrode and a method for switching a semiconductor device. One embodiment provides a semiconductor substrate with an emitter region, a drift region, a body region and a source region. The drift region is formed between the emitter and the body region while the body region is formed between the drift and the source region. A first trench structure extends from the source region at least partially into the drift region. The first trench structure includes a gate electrode arranged next to the body region and a switch electrode arranged in portions next to the drift region, wherein the switch and gate electrodes are electrically insulated from each other in the trench structure. A first gate driver is electrically connected to the gate electrode while a second gate driver is electrically connected to the switch gate.11-26-2009
20080290928SWITCHING CIRCUIT - A switching circuit is disclosed. The switching circuit is provided with first and second signal terminals, a control terminal, first and second resisters, and a field-effect transistor having a drain, a source, a gate and a back-gate. One end of the first resister is connected with the control terminal. The field-effect transistor is connected between the first and second signal terminals. The gate of the field-effect transistor is connected with the other end of the first resister. The back-gate of the field-effect transistor is connected with one end of the second resister. One of the source and drain of the first field-effect transistor is connected with the other end of the second resister.11-27-2008
20080211568MuGFET POWER SWITCH - A multi-gate field effect transistor power switch is used to selectively couple a circuit to a supply voltage. In various embodiments, both n and p-type multi-gate field effect transistor power switches may be used to couple sub-circuits of varying granularity to different voltage supplies.09-04-2008
327428000 With silicon controlled rectifier (SCR) 2
20090128218METHOD AND APPARATUS FOR CONTROLLING DEVICE BY DETECTING SCR THEREOF - A method and apparatus for controlling a device by detecting a silicon controlled rectifier (SCR) thereof, as well as a method and apparatus of automatic transfer switch controller thereof are disclosed. In one embodiment, the apparatus includes an input configured to receive input power, an output configured to provide said input power to a load a switch unit electrically coupled between said input and said output, the switch unit having at least one silicon controlled rectifier (SCR), a control unit electrically coupled to the switch unit for detecting the SCR of said switch unit and configured to provide a driving signal, and a device, which is driven by said control unit, wherein the driving signal is determined by the control unit after detecting a voltage value between the gate electrode and the cathode electrode of said SCR.05-21-2009
20110316608SWITCHING ARRAY AND METHODS OF MANUFACTURING AND OPERATION - A switching array includes a plurality of switching elements electrically coupled to each other, each switching element being configured to be switched between conducting and non-conducting states. The switching array also includes at least one parasitic minimizing circuitry electrically coupled to the plurality of switching elements and configured to provide near zero electrical voltage and current across and through each of the plurality of switching elements during switching of the plurality of switching elements between the conducting and non-conducting states.12-29-2011
Entries
DocumentTitleDate
20120200335SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg08-09-2012
20100117713SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME - The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.05-13-2010
20120161850RF BUFFER CIRCUIT WITH DYNAMIC BIASING - A method includes setting a mode of operation of a buffer circuit outputting an output signal. The mode of operation is set to a first mode of operation or a second mode of operation. The output signal is substantially in-phase with an input signal received by the buffer circuit when the mode of operation is the first mode. The output signal is substantially out of phase with the input signal when the mode of operation is the second mode.06-28-2012
20100164599SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME - The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.07-01-2010
20080258799HIGH FREQUENCY SWITCHING CIRCUIT - A high frequency switching circuit is disclosed. The high frequency switching circuit is provided with first and second high frequency signal terminals, a control terminal, a field-effect transistor having a drain, a source and a gate. The field-effect transistor is connected between the first and the second high frequency signal terminals so as to switch a high frequency signal. The high frequency switching circuit is further provided with a variable resistance circuit which is connected between the gate of the field-effect transistor and the control terminal.10-23-2008
20090121775TRANSISTOR AND METHOD FOR OPERATING THE SAME - In a transistor, an AlN buffer layer 05-14-2009
20100073066RADIO-FREQUENCY SWITCH CIRCUIT - A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.03-25-2010
20130033300SEMICONDUCTOR DEVICE AND SOLID STATE RELAY USING SAME - A semiconductor device includes one or more transistor cells mounted on a first conductive type silicon carbide (SiC) substrate, wherein each of the transistor cells includes a second conductive type wall region formed on a first surface of the SiC substrate, a first conductive type source region formed in the wall region, a gate electrode formed with a gate insulating film; a source electrode formed in such a way as to be brought into contact with the source region, and a drain electrode formed on a second surface of the SiC substrate. The semiconductor device further includes a second conductive type region located close to an outside of an outermost cell of the transistor cells, the second conductive type region surrounding the wall region and being insulated from both of the gate electrode and the source electrode.02-07-2013
20100102870WIDEBAND SWITCHED CURRENT SOURCE - A current source block provided according to an aspect of the present invention provides a substantially constant current even when the provision of the current is switched on and off at different frequencies. The current source block contains a main portion and a replica portion, with each portion having a current source and switches to connect output of the current source to corresponding output nodes. Additional connections are provided to enable the replica portion to counter deviations in the current output of the main portion due to parasitic effects. As a result, the current source block provides a constant current even when switched off/on at different (in particular high) frequencies. Such current source blocks may be used in components such as current steering DACs to obtain a linear response even at high operational frequencies.04-29-2010
20100097119GALLIUM NITRIDE SWITCH METHODOLOGY - Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.04-22-2010
20100109750Boost Mechanism Using Driver Current Adjustment for Switching Phase Improvement - System and method for providing a boost current to a switching transistor gate is disclosed. A boost capacitor precharged to a voltage level above a gate-source voltage is coupled to a switching transistor gate at the beginning of a switch-on phase. The boost capacitor is decoupled from the switching transistor gate when a boost capacitor voltage falls below the gate-source voltage and is again precharged to the voltage level above the gate-source voltage. A second-phase resistance is coupled between a supply voltage and the switching transistor gate. The second-phase resistance value is selected based upon a current peak detected in the switching transistor. A switch-off capacitor precharged to a voltage level below the gate-source voltage may be coupled to the switching transistor gate at the beginning of a switch-of phase.05-06-2010
20120182061RADIO-FREQUENCY SWITCH CIRCUIT - A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.07-19-2012
20100327943ILLUMINATED PUSHBUTTON SWITCH WITH ELECTRONIC LATCHING AND BLINKING FEATURE - Within an illuminating pushbutton switch, an electronic circuit replaces an electromagnetic holding coil for latching or releasing a state of the illuminated pushbutton switch, and further provides blinking functionality. The electronic circuit includes inputs receiving set, reset and toggle control signals, outputs delivering open, closed and blink control signals, latch logic controlled by the set and reset control signals and delivering signals maintaining the illuminated pushbutton switch in either an open or closed state, and a frequency divider and oscillator coupled together to deliver a blink control signal. The electronic circuit fits within the illuminated pushbutton switch housing in space sized to hold two snap action switching devices without increase in the length, weight or mounting depth of the illuminated pushbutton switch. The inputs and outputs are coupled to external pins from the illuminated pushbutton switch and may be remotely controlled.12-30-2010
20130069708SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME - One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg03-21-2013
20120218025ELECTRONIC COMPONENTS WITH REACTIVE FILTERS - An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.08-30-2012
20090091372SYSTEM-ON-A-CHIP AND POWER GATING CIRCUIT THEREOF - A system-on-a-chip and a power gating circuit thereof are provided. The power gating circuit includes a first transistor, a charge pump circuit, and a hold circuit. A gate terminal of the first transistor is controlled by a first input signal. A first source/drain terminal of the first transistor is coupled to a first voltage. A second source/drain terminal of the first transistor outputs an output voltage. The charge pump circuit is coupled to a bulk terminal of the first transistor for changing a bulk voltage of the first transistor according to a second input signal. The hold circuit is coupled to the bulk terminal of the first transistor for holding the bulk voltage of the first transistor.04-09-2009
20110037511MULTIPLE SIGNAL SWITCHING CIRCUIT, CURRENT SWITCHING CELL CIRCUIT, LATCH CIRCUIT, CURRENT STEERING TYPE DAC, SEMICONDUCTOR INTEGRATED CIRCUIT, VIDEO DEVICE, AND COMMUNICATION DEVICE - In a multiple signal switching circuit using four input signals IN02-17-2011
20120229192SEMICONDUCTOR INTEGRATED CIRCUIT AND HIGH FREQUENCY MODULE WITH THE SAME - A semiconductor integrated circuit which reduces an increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.09-13-2012
20130162326HIGH-VOLTAGE SWITCH USING THREE FETS - Switch circuits are disclosed, for providing a single-ended and a differentially switched high-voltage output signals by switching a high supply voltage in response to at least one logic-level control signal. The switch that provides the single-ended switched high-voltage output signal includes a chain of at least three serially coupled field effect transistors (FETs). The chain receives the high supply voltage and switches it to output the high-voltage output signal. The switch that provides the differentially switched high-voltage output signal includes two differentially coupled chains, each having at least three serially coupled FETs. The chains receive the high supply voltage and switch it to output the differential high-voltage output signal. A control/bias circuit provides a control voltage to at least one of the FETs in the chains, responsive to the control signal.06-27-2013
20130162325SWITCHING CIRCUIT - A switching circuit suitable for a low power oscillator circuit includes control and output circuits, the control circuit arranged to control the output circuit, the control circuit having input and output terminals, the output circuit having input and output terminals and control terminals; wherein the input terminal of the control circuit is connected to the input terminal of the output circuit, and the control terminal of the output circuit is connected to the output terminal of the control circuit, the output circuit first switches connected in series and arranged such that in use at least one of the switches is in a low impedance state at any given time, and the control circuit has second switches connected in series and arranged such that in use at least one of the switches is in a low impedance state at any given time.06-27-2013
20120112816CIRCUIT AND METHOD FOR IMPLEMENTING POWER GOOD AND CHIP ENABLE CONTROL BY A MULTI-FUNCTIONAL PIN OF AN INTEGRATED CIRCUIT - A first switch is switched to short a multi-functional pin of an integrated circuit to a ground terminal or let a current supplied to the multi-functional pin to flow to a second switch connected to the multi-functional pin. Before the integrated circuit is ready, the second switch is closed circuit and is detected its current to determine a first signal to enable or disable the integrated circuit. After the integrated circuit is ready, the second switch is open circuit, the voltage at the multi-functional pin is detected to determine a second signal to enable or disable the integrated circuit, and when the voltage at the multi-functional pin is higher than a threshold, a power good signal is triggered.05-10-2012
20100277218Solar Module and Method of Controlling Operation of a Solar Module - A solar module includes a solar generator for converting incident radiation into electrical power and a solar inverter for feeding the power generated by the solar generator into a power supply system or a load. A variable bias load is connected in parallel with the solar generator and a control device, which drives the variable bias load, detects a presently available power of the solar generator as well as a present no-load loss of the solar inverter, compares the detected power of the solar generator and the detected no-load loss of the solar inverter and enables the power of the solar generator to be fed into the power supply system or the load by the solar inverter only when the detected power of the solar generator exceeds the detected no-load loss of the solar inverter. A method of controlling operation of a solar module is also provided.11-04-2010
20120274386SEMICONDUCTOR CIRCUIT - A semiconductor circuit which can have stable input output characteristics is provided. Specifically, a semiconductor circuit in which problems caused by the leakage current of a switching element are suppressed is provided. A field-effect transistor in which a wide band gap semiconductor, such as an oxide semiconductor, is used in a semiconductor layer where a channel is formed is used for a switching element included in a switched capacitor circuit. Such a transistor has a small leakage current in an off state. When the transistor is used as a switching element, a semiconductor circuit which has stable input output characteristics and in which problems caused by the leakage current are suppressed can be fabricated.11-01-2012
20080231341OVER-VOLTAGE TOLERANT PASS-GATE - A pass-gate having a single or parallel opposite polarity FETs is disclosed. The wells of the primary transistor switches are driven from circuitry that reduces over-voltage leakage and other malfunctions. A circuit that drives the wells is also used to power enable circuits that drive the gates of the pass transistors. The use of separate circuits to the gate and the wells further reduces leakage. In the condition of power supply voltage and signal levels that are near the thresholds of the FETs involved, one or more Schottky diodes may be used across pn junctions in the FETs that will prevent turning on the pn junctions.09-25-2008
20110285453COMPENSATION OF NONLINEARITY OF SINGLE ENDED DIGITAL TO ANALOG CONVERTERS - This disclosure relates to a compensating for nonlinearity resulting from a capacitance feedback in current cells of a single ended digital to analog circuit.11-24-2011
20110025402CHOPPING TECHNIQUE FOR CONTINUOUS TIME SIGMA-DELTA ADCS WITHOUT Q-NOISE FOLDING - A chopping transconductor includes an transconductor input stage coupled with input signals of the chopping transconductor; a chopping switch coupled with an output of the transconductor input stage, the chopping switch having a switch output; and a cascode transistor, wherein the switch output is coupled to an output of the chopping transconductor through the cascode transistor. The chopping transconductor may be used in an analog-to-digital converter to isolate chopping switches from junctions with quantization noise.02-03-2011
20090189677GATE DRIVING CIRCUIT AND DISPLAY APPARATUS HAVING THE SAME - A gate driving circuit includes stages, the stages being cascaded and each including: a pull-up part which pulls up a gate voltage to a clock signal during a horizontal scanning period (1H); a carry part which pulls up a carry voltage to the clock signal during the horizontal scanning period (1H); a pull-up driving part connected to a control terminal (Q-node) common to the carry part and the pull-up part and which receives a previous carry voltage from a first previous stage to turn on the pull-up part and the carry part; and a ripple preventing part which prevents a ripple generated at a previous Q-node of a second previous stage based on a ripple generated at the Q-node of the carry part and the pull-up part.07-30-2009
20090189678HIGH TEMPERATURE OPERATING PACKAGE AND CIRCUIT DESIGN - The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.07-30-2009
20090153226HIGH-SIDE DRIVER FOR PROVIDING AN OFF-STATE IN CASE OF GROUND LOSS - An electronic device has circuitry for driving a high side switch. The circuitry has a high side driver including a first switch and a second switch being coupled to each other by a driver output node. The driver output node is adapted to be coupled to a control input of the high side switch. The first switch is coupled to a driver high voltage level and the second switch is coupled to ground for alternately pulling the driver output node to either the driver high voltage level or to ground so as to turn the high side switch on and off. A diode element is coupled between the driver output node and the second switch in a forward direction from the driver output node to the switch.06-18-2009
20080265979Control apparatus - A control apparatus comprises a voltage source, a controlling unit and an enabling unit. The controlling unit is coupled to the voltage source for receiving an input signal and generating an output signal. The enabling unit is coupled to the voltage source, the controlling unit and a ground terminal for controlling whether the controlling unit generates the output signal or not according to an enabling signal. The enabling unit comprises a first switch, a second resistor, a third resistor and a third transistor. The first switch is used for selectively turning on or off according to the enabling signal. A first terminal of the second resistor is coupled to the first switch. A first terminal of the third resistor is coupled to a second terminal of the second resistor and a second terminal of the third resistor is coupled to the ground terminal. A source of the third transistor is coupled to the ground terminal and a gate of the third transistor is coupled between the second and the third resistor.10-30-2008
20110063014SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.03-17-2011
20110199147ELECTROSTATIC ACTUATOR APPARATUS - According to one embodiment, an electrostatic actuator apparatus includes a first voltage generation circuit configured to generate a first voltage, a first switch connected between the first voltage generation circuit and a first node, a second voltage generation circuit configured to generate a second voltage, a second switch connected between the second voltage generation circuit and a second node, a capacitor connected between the first node and the second node, an electrostatic actuator having a drive electrode connected to the first node, and a control circuit configured to perform an operation of sequentially turning on the first switch, turning off the first switch and turning on the second switch when the electrostatic actuator is driven.08-18-2011
20100079194GATE DRIVE METHOD FOR H BRIDGE CIRCUIT - An H bridge circuit includes a gate driver circuit coupled to a gate of an NMOS device. The output of the gate driver circuit is at a voltage from 0.1V to 0.4V during a dead time of the H bridge circuit. The gate voltage of the NMOS device is biased at 0.1˜0.4V to overcome the problems of minority carrier injection and power dissipation as compared with V04-01-2010
20100079195PROTECTED POWER SWITCH WITH LOW CURRENT CONSUMPTION - Under-voltage, over-voltage, and temperature detectors disposed in a switching circuit are turned on periodically and in response to an oscillating signal having a low duty cycle. Accordingly, because the voltage and temperature detectors remain off for long durations, their operating currents, and thus the operating current of the switching circuit is substantially reduced. The switching circuit has a current limiting function which is disabled when the switch current is below a threshold value, thereby further decreasing the current consumption of the switching circuit at low switch current levels.04-01-2010
20090206909BIDIRECTIONAL CONTROLLING DEVICE FOR INCREASING RESISTANCE OF ELEMENTS ON VOLTAGE STRESS - A bidirectional controlling device is utilized for receiving two input signals, which are respectively provided from a first input terminal and a second input terminal, and for respectively providing two output signals to a first output terminal and a second output terminal, by controlling a plurality of switch sets.08-20-2009
20090206910HIGH-FREQUENCY SWITCH CIRCUIT - A high frequency switch circuit is provided with a switch section composed of a field effect transistor having a plurality of bias circuits; and a potential generating circuit for generating a bias voltage from a control signal and supplying a bias circuit with the bias voltage. The field effect transistor serves as a path for a high frequency signal by turning on and off corresponding to the control signal. The bias circuit is provided for generating a potential difference between the drain terminal and the source terminal of the field effect transistor and for applying a bias voltage lower than the voltage of the control signal to the drain terminal and the source terminal.08-20-2009
20090167410POWER SUPPLY SWITCHING CIRCUIT - Provided is a power supply switching circuit capable of efficiently supplying a desired voltage among a plurality of voltages to a load. In the case of a P-type semiconductor substrate, N-type MOS transistors are provided between a load and an AC adapter and between the load and a battery, and hence no parasitic diode exists between the load and the AC adapter or the battery, resulting in no current path due to the parasitic diode. Thus, when the AC adapter and the battery are connected to the power supply switching circuit, the N-type MOS transistor is turned off, whereby the current path between the battery and the load is cut off completely and the N-type MOS transistor is turned on. Accordingly, the battery cannot supply a voltage to the load while only the AC adapter can supply a voltage to the load.07-02-2009
20110169548DATA LATCH CIRCUIT, DRIVING METHOD OF THE DATA LATCH CIRCUIT, AND DISPLAY DEVICE - The present invention provides a data latch circuit which can operate stably with a low-amplitude signal, which consumes less electric power, and which is resistant against the variation in TFTs.07-14-2011
20090284302CONTROL CIRCUITS AND METHODS FOR CONTROLLING SWITCHING DEVICES - A control circuit for controlling a switching device having a first terminal, a second terminal, and a control terminal is disclosed. The control circuit includes a first diode for coupling to the first terminal of the switching device, a second diode for coupling to the second terminal of the switching device, a first transistor for coupling to the control terminal of the switching device, and a second transistor coupled to the second diode. The first transistor is coupled to the first diode. The control circuit is configured to allow current flow in only one direction between the first and second terminals of the switching device.11-19-2009
20110204956BOOTSTRAPPED SWITCH CIRCUIT - A bootstrapped switch circuit can include at least one transistor, to receive an input signal and allow the input signal to pass through as an output signal based on a control signal, and a voltage-controlled voltage source, to provide first and second voltages between a gate and a source of the at least one transistor in response to the control signal. The voltage-controlled voltage source can include a differential pair and a current source. A gate of one of the differential pair can receive the control signal and a gate of the other of the differential pair can receive a logical inverse of the control signal. The current source can provide a current to connected sources of the differential pair. The first voltage can turn on the at least one transistor and be produced in response to a first logic state of the control signal resulting in the current of the current source flowing entirely through a first one of the differential pair. The second voltage can turn off the at least one transistor and be produced in response to a second logic state of the control signal resulting in the current of the current source flowing entirely through a second one of the differential pair.08-25-2011
20110199146High-Frequency Switching Circuit - A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.08-18-2011
20080284492Voltage Switch Circuit of Semiconductor Device - Disclosed is a voltage switch circuit of a semiconductor device. The subject voltage switch circuit can be used to apply voltage to a semiconductor memory device control circuit. The voltage switch circuit according to an embodiment includes five transistors and a capacitor. An output terminal of the subject circuit outputs VSS when VDD is applied to an input terminal, and outputs a boosted operating voltage when VSS is applied to the input terminal.11-20-2008
20080284491Integrated Circuit, Electronic Device and Integrated Circuit Control Method - An integrated circuit (11-20-2008
20100201429SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME - The present invention provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit.08-12-2010
20090108909High Current Power Output Stage - A high current end power stage (PA) comprises at least four power transistors (T), two electrical supply lines and at least a safety fuse (S). The at least four power transistors (T) have each a diode (D) which is blocked during normal operation of the respective power transistor (T). The two electrical supply lines couple the at least four power transistors (T) with a supply potential (Up) and a reference potential (Un) in such a way that two of the at least four power transistors (T) are at a time connected in series to each other, to be precise connected electrically between the supply potential (Up) and the reference potential (Un). The at least one safety fuse (S) is connected in series to the at least four power transistors (T) in at least one of the two electrical supply lines. The at least one safety fuse (S) can be triggered by a current which flows through the diode (D) of the at least four power transistors (T), said diode being then arranged in the direction of conduction (D), when the supply potential (Up) and reference potential (Un) are exchanged.04-30-2009
20100141327COMPENSATION OF NONLINEARITY OF SINGLE ENDED DIGITAL TO ANALOG CONVERTERS - This disclosure relates to a compensating for nonlinearity resulting from a capacitance feedback in current cells of a single ended digital to analog circuit.06-10-2010
20090128217Switching circuit - The application provides a switching circuit for switchably connecting an input node and an output node. The switching circuit comprises a switch operable to switchably connect the input node to the output node in response to a switching signal. A sensor is provided for sensing the voltage between the input and output nodes and providing a sense signal in response thereto. A driver coupled to the sensor adjusts the switching signal in response to the sense signal.05-21-2009
20090184746Low Voltage Drop Unidirectional Electronic Valve - A low voltage drop unidirectional electronic valve constituted of: a first terminal; a second terminal; an electronically controlled switch arranged to allow the flow of current from the first terminal to the second terminal when closed, the electronically controlled switch comprising a pair of reverse serially connected field effect transistors; a control circuit, arranged to close the electronically controlled switch responsive to the potential of the first terminal exceeding the potential of the second terminal by a predetermined amount; and a refresh circuit arranged to periodically open the electronically controlled switch. In one embodiment the low voltage drop unidirectional valve is arranged as one of a solar bypass element and an ORing diode.07-23-2009
20120068757SEMICONDUCTOR SWITCH - According to one embodiment, a semiconductor switch includes a power supply circuit, a control circuit and a switch circuit. The power supply circuit includes an internal potential generator connected to a power supply, and a first transistor connected between an input and an output of the internal potential generator. The internal potential generator generates a first potential higher than an input potential. The first transistor is turned on when the first potential becomes lower than the input potential and has a threshold voltage being set so as to keep the first potential not lower than the input potential. The control circuit is configured to receive the first potential to output a high-level or low-level control signal. The switch circuit is configured to receive an input of the control signal to switch connection between terminals.03-22-2012
20090212845High Voltage Control Switch - A high voltage control switch including a voltage controller and a control switch is provided. The high voltage control switch splits the control switching of high voltages into two ranges. The voltage controller determines the on and off voltages appropriate for the application based on the range the input signal is in. The control switch then outputs the appropriate voltages determined by the voltage controller based on a logic input. As such, the high voltage control switch provides fast and reliable operation for high voltage switching applications.08-27-2009
20090243702VARACTOR BANK SWITCHING BASED ON NEGATIVE CONTROL VOLTAGE GENERATION - A method and apparatus for varactor bank switching for a voltage controlled oscillator is disclosed. Varactor bank switching involves generating a negative bias voltage signal as a control signal for a varactor bank switch in an off-state, the varactor bank switch comprising a pass-gate circuit including switching transistors. Generating the negative bias voltage signal includes employing an active rectifier circuit running at the speed of an oscillation signal, the negative bias voltage signal maintaining the gate-source voltage of the pass-gate circuit below a threshold voltage to prevent said switching transistors from becoming conductive in an off-state.10-01-2009
20100148850System And Method For Common Mode Translation - System and method for common mode translation in continuous-time sigma-delta analog-to-digital converters. An embodiment includes a loop filter having an RC network coupled to a differential signal input, a Gm-C/Quantizer/DAC circuit (GQD) coupled to the loop filter, a common-mode level adjust circuit coupled to signal inputs of the GQD, and a tuning circuit coupled to the GQD and the common-mode level adjust circuit. The GQD evaluates an input signal provided by the RC network. computes a difference between a filtered input signal and the feedback quantization signal to generate an error signal, measures the error signal, and compensates for the error signal with sigma-delta noise-shaping. The common-mode level adjust circuit alters a common-mode level of a differential input signal to be substantially equal to a desired common-mode level and the tuning circuit provides a compensation voltage to the common-mode level adjust circuit based on a difference between the common-mode levels.06-17-2010
20100188134CONTROL OF A RESONANT SWITCHING SYSTEM WITH MONITORING OF THE WORKING CURRENT IN AN OBSERVATION WINDOW - Controlling a resonant switching system, which includes a first switch and a second switch in a half-bridge configuration for driving a resonant load. A corresponding control system includes command means for switching on and switching off the switches alternatively according to a working frequency of the switching system. The control system includes detection means for detecting a zeroing of a working current being supplied by the switching system to the resonant load in a temporal observation window; the observation window follows each switching off of at least one of the switches, and has a length equal to a fraction of a working period of the switching system. Correction means are then provided for modifying the working frequency in response to each detection of the zeroing in the observation window.07-29-2010
20100225377SWITCH CIRCUIT - A switch circuit includes an input section; an output section; a first series section having an output and comprising at least a first 4-terminal FET connected between the input section and the output section through the output of the first series section; a first shunt section comprising at least a second 4-terminal FET connected between an output of the first series section and a ground; a first control terminal section connected with a gate of the first 4-terminal FET; a second control terminal section connected with a gate of the second 4-terminal FET; and a back gate control terminal section connected with a back gate of each of the first and second 4-terminal FETs. A bias power supply section is configured to apply a reverse bias voltage between the back gate control terminal section and the ground.09-09-2010
20100237928SWITCHING CIRCUIT AND METHOD FOR TESTING THE SAME - There is provided a method for testing a switching circuit including a first FET connected between input/output terminals, a capacitor connected between one of the input/output terminals and the first FET, and a second FET that is connected in parallel with the capacitor and has a gate electrode connected to a ground terminal. The method includes, applying a potential that sets the second FET to a conducting state to the ground terminal, and testing a DC test for the first FET via the second FET.09-23-2010
20110057713POWER MODULE - The present invention provides a power module in which a first semiconductor device disposed on a first substrate and a second semiconductor device disposed on a second substrate are disposed at symmetrical positions with a third substrate interposed therebetween.03-10-2011
20090167409LEVEL SHIFTING SWITCH DRIVER ON GAAS PHEMPT - A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (07-02-2009
20120139614VOLTAGE SEQUENCE OUTPUT CIRCUIT - A voltage sequence output circuit includes input terminals of a NOR gate connected to first and second input terminals. An output terminal of the NOR gate connected to a first terminal of a first electrical switch. A third terminal of the first electrical switch connected to a power source. A first terminal of a second electrical switch connected to the first input terminal and the power source through a first resistor. A second terminal of the second electrical switch connected to a second terminal of the first electrical switch. A third terminal of the second electrical switch connected to a first output terminal and a second terminal of a third electrical switch. A first terminal of the third electrical switch connected to a second input terminal and the power source through a second resistor. A third terminal of the third electrical switch connected to a second output terminal.06-07-2012
20090212844Information Handling System Port Security - A port securing module includes a power gate that is operable to be coupled in series to a power source and to a load. A resistor is coupled in parallel to the power gate. An operational amplifier includes an inverting input and a non-inverting input that couple the operational amplifier in parallel to each of the power gate and the resistor. The operational amplifier also includes an output that is operable to indicate whether a load is coupled to the power gate and, if a load is coupled to the power gate, supply a voltage to activate the power gate such that power is supplied to the load.08-27-2009
20110032021T SWITCH WITH HIGH OFF STATE ISOLATION - An analog T switch is disclosed which has high isolation in the off state. The analog T switch can include series-connected NMOS transistors having separate gate control. The gates of the NMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog switch can include series-connected PMOS transistors having separate gate control. The gates of the PMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog T switch can include a substrate voltage control circuit that controls the voltage of the substrate regions in which the PMOS transistors are formed. The substrate voltage control circuit can isolate the substrate regions of the PMOS transistors from one another in the off state to improve off state isolation of the analog T switch.02-10-2011
20090102540SWITCH APPARATUS AND CONTROL APPARATUS - There is provided a switching apparatus that switches connection or non-connection between two terminals. The switching apparatus includes a series connection FET (field effect transistor) of which a source and a drain are connected to the two terminals, and a series connection control section that supplies a series connection control signal to perform switching control between the source and the drain to a gate of the series connection FET, and once transits, when switching the series connection FET from an OFF state to an ON state, the series connection control signal from an off-state voltage to hold the OFF state to a voltage exceeding an on-state voltage to hold the ON state and then makes the series connection control signal be the on-state voltage.04-23-2009
20120242395LOW LOSS SWITCHED CAPACITOR - An integrated circuit including a capacitor bank is disclosed. The capacitor bank includes one or more cells. Each cell may include two capacitors in series and a transistor in parallel with one of the capacitors. The transistor switches a capacitance of the parallel capacitor in or out of a larger circuit.09-27-2012
20110115544BOOTSTRAPPED SWITCH CIRCUIT - A bootstrapped switch circuit can include a switch transistor, having a drain configured as an input terminal to receive an input signal, and a voltage-controlled voltage source, configured to provide predetermined constant voltages between a gate and a source of the switch transistor in response to a control signal received at a control terminal. The predetermined constant voltages can include a first predetermined constant voltage to turn on the switch transistor and pass the input signal to the source and a second predetermined constant voltage to turn off the switch transistor. The first and second predetermined constant voltages can be independent of the magnitude of a signal passed to the source of the switch transistor based on the input signal at the drain.05-19-2011
20100301921SWITCHING CONTROL CIRCUIT - According to one embodiment, a switching control circuit includes an output circuit, a first circuit, and a second circuit. The output circuit includes an input terminal, an output terminal, and a switching element. The first circuit is connected to a control terminal of the switching element. The first circuit controls an input signal during a period when an output signal of the output circuit changes. The second circuit is connected to a control terminal of the first circuit. The second circuit generates a control signal for controlling a current flowing in the first circuit during the period when the output signal of the output circuit changes.12-02-2010
20110001545DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal.01-06-2011
20110025401SWITCH CONTROLLING CIRCUIT, SWITCH CIRCUIT UTILIZING THE SWITCH CONTROLLING CIRCUIT AND METHODS THEREOF - A switch controlling circuit, which comprises: a frequency programmable clock signal generator and a plurality of registers. The frequency programmable clock signal generator serves to generate a frequency controllable clock signal. The registers comprises: a first stage register, for receiving an input signal and the frequency controllable clock signal, and for outputting a first output signal, which is utilized to control a first switch device, according to the input signal and the frequency controllable clock signal; and a second stage register, for receiving the first output signal and the frequency controllable clock signal, and for outputting a second output signal, which is utilized to control a second switch device, according to the first output signal and the frequency controllable clock signal.02-03-2011
20110043272CIRCUIT ARRANGEMENT - A circuit includes a switching unit, a switching element, and a control unit. The control unit provides at least one supply signal depending on a switching position of the switching element. An advance signal and the supply signal(s) of the control unit are assigned to the switching unit on the input side. The switching unit supplies and controls predetermined components of the switching unit, which are configured to control the switching element in accordance with the advance signal in such a way that the components activate the switching element. The switching unit is also configured to detect the supply signal(s) present once the switching element has been activated and in response thereto to switch to supplying the predetermined components by way of the supply signal(s).02-24-2011
20110043271Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals - Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.02-24-2011
20110241755High Power Radio Frequency (RF) Switch - A radio frequency (RF) switch circuit includes switching devices coupled at a common node and a floating control signal circuit (CSS) coupled to the control electrodes of the switching devices and the common node and configured to isolate RF signals from the CSS and configured to provide differential voltage signals to the common node and each of the control electrodes.10-06-2011
20090219076APPARATUS, SYSTEM, AND METHOD FOR GROUNDING INTEGRATED CIRCUIT OUTPUTS - An apparatus, system, and method are disclosed for grounding IC outputs. A first switching module turns on when an IC power supply voltage exceeds a base voltage. The first switching module is in communication with IC outputs and a common ground. The IC outputs are configured to be pulled up to the IC power supply voltage through pull-up resistors when a first voltage is driven lower than the base voltage. In addition, the first switching module connects the IC outputs to the common ground. A second switching module turns on, turns turn off the first switching module, disconnects the IC outputs from the common ground, and pulls the IC outputs up to the IC power supply voltage when the IC power supply voltage exceeds a minimum working voltage.09-03-2009
20100013541METHOD AND APPARATUS FOR A DYNAMICALLY SELF-BOOTSTRAPPED SWITCH - A dynamically self-bootstrapping circuit for a switch features a resistor in series with the control node of the switch. A bypass switch connects a control node to ground. When the switch is in an off-state, the bypass switch is enabled.01-21-2010
20090322408METHOD FOR REDUCING SWITCHING POWER LOSS - A method of controlling a switch in a power converter in order to reduce switching power loss is disclosed. A trigger voltage level is set and the voltage level across the switch V12-31-2009
20110175670SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To suppress variation of a signal in a semiconductor device. By suppressing the variation, formation of a stripe pattern in displaying an image on a semiconductor device can be suppressed, for example. A distance between two adjacent signal lines which go into a floating state in different periods (G07-21-2011
20110175669ANALOG SWITCH WITH INTERNAL DEVICE BODY CONTROL - A body control apparatus for an analog switch for minimizing leakage current and keeping PN junctions reverse-biased. The analog switch has first and second switch device clusters coupled between input and output nodes and controlled by a control input, each having a corresponding body junction. The body control apparatus includes body control devices each controlled by one of the input and output nodes for coupling a body junction to the opposite one of the input and output nodes. Each switch device cluster may include a main switch and body devices which keep the body junction of the main switch at a voltage level between the input and output nodes when the analog switch is on. When the analog switch is off, the body control apparatus activates when voltage across the input and output nodes rises to keep the body junctions at desired voltage levels.07-21-2011
20110084755ANALOG SWITCH - An analog switch (04-14-2011
20110248769ILLUMINATED PUSHBUTTON SWITCH WITH CONFIGURABLE ELECTRONIC LATCHING FEATURES - Within an illuminating pushbutton switch, an electronic latching circuit replaces an electromagnetic holding coil for latching or releasing a state of the illuminated pushbutton switch. The electronic latching circuit includes inputs receiving clock and reset control signals, one or more outputs delivering latch output states, which may include multiple configurable states, and latch logic controlled by the clock and reset control signals and delivering signals maintaining the illuminated pushbutton switch in a predetermined condition depending upon the latch state. The electronic logic circuit fits within the illuminated pushbutton switch housing in space sized to hold one snap action switching device without increase in the length, weight or mounting depth of the illuminated pushbutton switch.10-13-2011
20110074490INPUT/OUTPUT CIRCUIT - In some embodiments, an input/output (I/O) circuit sends and receives a high-level signal and a low-level signal via a coupling capacitance provided on a communication line. The I/O circuit includes a receiving portion including a first detection circuit arranged to detect one of the signals and a second detection circuit arranged to detect the other signal, a transmitting portion including a three-value output circuit configured to output one of signals consisting of a high-level signal, a low-level signal, and a high impedance signal, and a control circuit configured to control the receiving portion and the transmitting portion. The control circuit judges a level of an inputted signal depending on detection results of the first detection circuit and the second detection circuit in a receiving state and controls an output value of the three-value output circuit in a transmitting state.03-31-2011
20110248768CHARGE DOMAIN FILTER WITH CONTROLLABLE TRANSFER FUNCTIONS AND TRANSFER FUNCTION CONTROL METHODS THEREOF - A charge domain filter with controllable transfer function is disclosed. The charge domain filter has a plurality of switched-capacitor networks, a switching device and a current adder. The switched-capacitor networks are interleaving controlled, and each have an input terminal and an output terminal, and the input terminals of all of the switched-capacitor networks are connected together to be coupled to an input signal. The switching device is designed for transfer function control, and is operated according to a switch control signal. The switching device determines connections between the output terminals of the switched-capacitor networks and how the output terminals of the switched-capacitor networks are coupled to the current adder and thereby generates at least one current adder input. The at least one current adder input is received by the current adder, and the current adder outputs an output signal accordingly.10-13-2011
20110248770SYSTEM AND METHOD FOR DRIVING BIPOLAR TRANSISTORS IN SWITCHING POWER CONVERSION - A system and method for driving a bipolar junction transistor is provided. The system includes a first transistor including a first gate, a first terminal, and a second terminal. The first gate is configured to receive a first control signal. Additionally, the system includes a second transistor including a second gate, a third terminal, and a fourth terminal. The second gate is configured to receive a second control signal. Moreover, the system includes a first resistor including a fifth terminal and a sixth terminal. The fifth terminal is connected to the first terminal, and the sixth terminal is biased to a first predetermined voltage. The fourth terminal is biased to a second predetermined voltage. The second terminal and the third terminal are connected at a node, and the node is connected to a base for a bipolar junction transistor.10-13-2011
20100321088Electric Circuit - A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.12-23-2010
20100321089COMPLEMENTARY HIGH VOLTAGE SWITCHED CURRENT SOURCE INTEGRATED CIRCUIT - A complementary high voltage switched current source circuit has a complementary current source pair, wherein a first of the current source pair is coupled to a positive voltage rail and a second of the current source pair is coupled to a negative voltage rail. A digital logic-level control interface circuit is coupled to the complementary current source pair and to the positive voltage rail and the negative voltage rail. A pair of high voltage switches is coupled to the complementary current source pair and the digital logic-level control interface circuit and controlled by the digital control interface circuit.12-23-2010
20110260774HIGH POWER FET SWITCH - Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, a first decoupling path and a second decoupling path are provided for the first FET device and the last FET device in the FET device stack. Both decoupling paths are configured to pass a time-variant input signal during the open state. The first decoupling path may be coupled from the drain contact of the first FET device to the gate contact or the source contact. The second decoupling path may be coupled from the source contact of the last FET device to the gate contact or drain contact. The time-variant input signal bypasses the FET device stack through the first and second decoupling paths during the open state.10-27-2011
20110260773HIGH POWER FET SWITCH - Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, one or more decoupling paths are provided and are configured to pass the time-variant input signal during the open state of the FET device stack. The first decoupling path may include a capacitor, a transistor, or the like, that passes the time-variant input signal by, for example, presenting a low impedance to the time-variant input signal during the open state. The decoupling paths may be connected so that the time-variant input signal bypasses a portion of the FET device stack during the open state.10-27-2011
20100283528NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS - Under one aspect, non-volatile transistor device includes a source and drain with a channel in between; a gate structure made of a semiconductive or conductive material disposed over an insulator over the channel; a control gate made of a semiconductive or conductive material; and an electromechanically-deflectable nanotube switching element in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region.11-11-2010
20110133815TOUCH SWITCHES AND PRACTICAL APPLICATIONS THEREFOR - A touch switch apparatus emulating a mechanical switch includes a field effect sensor and an electric field stimulator mechanically associated with the field effect sensor. A field generation signal applied to the field effect sensor causes an electric field to be generated thereabout. The electric field stimulator can be moved between first and second positions with respect to the field effect sensor. When moved into proximity with the field effect sensor, the electric field stimulator disturbs the electric field. A detection circuit coupled to the field effect sensor detects and responds to the disturbance to the electric field.06-09-2011
20110133814TX OUTPUT COMBINING METHOD BETWEEN DIFFERENT BANDS - An output buffer includes a first output transistor, a first switch, a second switch and a third switch. The first output transistor is connected to a first operational voltage for outputting the first operational voltage as the data signal. The first switch is connected to a bulk of the first output transistor for receiving an enable signal. The second switch is connected to the first switch and a second operational voltage for receiving the enable signal, wherein the second operational voltage is lower than the first operational voltage. The third switch includes a first terminal connected to the bulk of the first output transistor, a control terminal connected to the first switch, and a second terminal connected to the first operational voltage.06-09-2011
20110089993ELECTRONIC DEVICE AND METHOD FOR DC-DC CONVERSION - An electronic device for driving a power switch coupled to receive a first supply voltage level at one side of its channel is provided. The electronic device includes a control switch coupled with a first side of a channel to receive a varying control voltage having a maximum level that is greater than a maximum voltage level of the first voltage supply and with another side of the channel to a control gate of the power switch for selectively applying the control voltage to the control gate of the power switch. The first side of the channel is coupled with the control gate of the control switch and a capacitor is provided and coupled with a first side to the control gate of the control switch and with a second side to a constant voltage supply.04-21-2011
20110074489INVERTER - A two-level or multi-level inverter are supplied with a positive auxiliary voltage (Ug+) and a negative auxiliary voltage (Ug−). A bootstrap technique provides a first positive auxiliary voltage and a first negative auxiliary voltage from the supplied potentials. The bootstrap technique provides at least one additional negative auxiliary voltage to a switch driver of at least one semiconductor switch from the first negative auxiliary voltage. At the start up of an inverter, the inverter can perform a startup sequence to provide auxiliary voltages to the respective auxiliary voltage inputs of the switch drivers by turning the power semiconductors sequentially on and off.03-31-2011
20110095809SEMICONDUCTOR DEVICE HAVING SIGNAL TRANSFER LINE - To include a switch transistor inserted between a data bus and an input end of a signal receiving circuit and turned off when a potential of the data bus reaches VPERI−NVth, and an assist transistor that drives the input end of the signal receiving circuit to have VPERI. According to the present invention, because the switch transistor and the assist transistor assist a receiving operation performed by the signal receiving circuit, amplitude of a transferred signal can be reduced without reducing a transfer rate. With this configuration, power consumed by charging or discharging of the data bus can be reduced.04-28-2011
20100214004ANALOG SWITCH CIRCUIT - An analog switch circuit that includes a first field-effect transistor, a source of which is coupled to a first switch terminal, and a drain of which is coupled to a second switch terminal; a first capacitance storing electric charge; a second capacitance storing electric charge; a first switch circuit that couples the first capacitance between a direct current voltage node and a reference potential node; a second switch circuit that couples the first capacitance and the second capacitance in parallel; and a third switch circuit that couples the second capacitance between a gate and the source of the first field-effect transistor.08-26-2010
20110260772OPEN CIRCUIT DETECTOR AND METHOD THEREFORE - A circuit comprises a switch, a driver circuit, and an open circuit detector. The switch has a first current electrode coupled to a power supply terminal, a second current electrode coupled to supply a current to a load, and a control electrode. The driver circuit has an input for receiving a control signal, and an output coupled to the control electrode of the switch. The open circuit detector has a first terminal coupled to receive a voltage from a bootstrap capacitor, a second terminal coupled to the power supply terminal, and a control terminal coupled to the driver circuit. The open circuit detector detects an open circuit, and in response, provides a signal at the control terminal for causing the driver circuit to open the switch.10-27-2011
20100194463SWITCH CONTROL DEVICE AND SWITCH CONTROL METHOD - The present invention relates to a switch control device and a switch control method. The present invention controls a switching operation of a power switch that controls output power of a switching mode power supply (SMPS). The present invention generates an operation current corresponding to an input voltage of the SMPS and counts a compensation period in which a power supply voltage generated by the operation current increases from a predetermined counter low-reference voltage to a predetermined counter high-reference voltage. The present invention generates a compensation feedback current depending on the count result, generates a total feedback current by summing a main feedback current having a predetermined value and the compensation feedback current, and generates a power limit current of which a maximum value increases and decreases depending on the total feedback current. Turn-off of the power switch is determined by comparing the current flowing on the power switch with the power limit current.08-05-2010
20100194462Current Control Circuits - Circuit, system and method of current control circuits are disclosed. In one embodiment, a control circuit includes a first MOS transistor and a second MOS transistor. The first source/drains of the first and the second MOS transistors are coupled to an output of a power source. A second source/drain of the first MOS transistor is coupled to a first output node of the current control circuit. A second source/drain of the second MOS transistor is coupled to a second output node of the current control circuit. The control circuit further includes a means to block flow of current from the first output node of the current control circuit to the second output node of the current control circuit.08-05-2010
20110133813ANALOG SWITCH WITH A LOW FLATNESS OPERATING CHARACTERISTIC - An analog switch includes a transistor whose source connected to a signal input and whose drain is connected to a signal output. An output of a gate control circuit is connected to the transistor gate. A first input of the gate control circuit is connected to the source of the transistor. The gate control circuit responds to a logic transition of an enable signal received at a second input by pre-charging a substantially constant gate-to-source voltage across the transistor. This voltage is stored by a gate-to-source connected capacitor. In one steady-state logic condition of the enable signal, the gate control circuit operates to turn off the transistor. In another steady-state logic condition of the enable signal, the gate control circuit permits the signal received at the signal input to drive the gate of the transistor with a voltage offset by the substantially constant gate-to-source voltage stored on the capacitor.06-09-2011
20110148504APPARATUS AND METHOD FOR HDMI TRANSMISSION - Apparatus and methods are disclosed, such as those involving a high frequency transmitter. One such apparatus includes a pre-amplifier configured to receive an input signal via an input node; and a capacitor block electrically coupled between the pre-amplifier and an output node from which an output signal is transmitted. The capacitor block is configured to provide charge to the output node or pull charge from the output node while the output signal transitions. The apparatus further includes a switch electrically coupled between the output node and a voltage reference, wherein the switch is turned on or off at least partly in response to a signal from the pre-amplifier. This configuration effectively reduces rise and fall time of the output signal for high-frequency transmission.06-23-2011
20080265978Tuning capacitance to enhance FET stack voltage withstand - An RF switch to controllably withstand an applied RF voltage Vsw, or a method of fabricating such a switch, which includes a string of series-connected constituent FETs with a node of the string between each pair of adjacent FETs. The method includes controlling capacitances between different nodes of the string to effectively tune the string capacitively, which will reduce the variance in the RF switch voltage distributed across each constituent FET, thereby enhancing switch breakdown voltage. Capacitances are controlled, for example, by disposing capacitive features between nodes of the string, and/or by varying design parameters of different constituent FETs. For each node, a sum of products of each significant capacitor by a proportion of Vsw appearing across it may be controlled to approximately zero.10-30-2008
20090174461Quick turn on apparatus and method for a NMOSFET switch - A quick turn on apparatus and method for a NMOSFET switch are used to maintain the gate voltage of the NMOSFET switch non-zero but not enough to turn on the NMOSFET switch, such that the NMOSFET switch turns on more quickly when it is to be turned on. Seamless transition can be further achieved in a single pole double throw switching circuit by using the quick turn on apparatus and method.07-09-2009
20110115545SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor.05-19-2011
20090033405DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE USING THE SAME - A driver circuit of the present invention includes: a pair of switch elements (P02-05-2009
20090167411NORMALLY-OFF ELECTRONIC SWITCHING DEVICE - A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.07-02-2009
20110050323SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period.03-03-2011
20110156795BIDIRECTIONAL SWITCH - A bidirectional switch includes a semiconductor switch Q06-30-2011
20120001676HIGH FREQUENCY SWITCH CIRCUIT DEVICE - A switch circuit device includes a switch circuitry and a driver circuitry. The switch circuitry switches an electrical connection between first and second terminals between the on-state and the off-state in response to a set of control signals. The driver circuitry is configured to generate the control signals and includes an N-latch circuit and a leakage current suppression circuitry. The N-latch circuit selectively outputs lower one of two input voltages fed thereto as one of the control signals. The leakage current suppression circuitry suppresses the leakage current through the N-latch circuit.01-05-2012
20120007655INPUT/OUTPUT CIRCUIT - In some embodiments, an input/output (I/O) circuit sends and receives a high-level signal and a low-level signal via a coupling capacitance provided on a communication line. The I/O circuit includes a receiving portion including a first detection circuit arranged to detect one of the signals and a second detection circuit arranged to detect the other signal, a transmitting portion including a three-value output circuit configured to output one of signals consisting of a high-level signal, a low-level signal, and a high impedance signal, and a control circuit configured to control the receiving portion and the transmitting portion. The control circuit judges a level of an inputted signal depending on detection results of the first detection circuit and the second detection circuit in a receiving state and controls an output value of the three-value output circuit in a transmitting state.01-12-2012
20120056659INTEGRATED CIRCUITS FOR CONVERTING A HIGH VOLTAGE LEVEL TO A LOW VOLTAGE LEVEL - An integrated circuit includes a high side driver and a low side driver. The low side driver is electrically coupled with the high side driver. A circuit is electrically coupled with the high side driver and a first node between the high side driver and the low side driver. The circuit is configured to substantially turn off the high side driver if the high side driver leaves a cutoff region of the high side driver during a tri-state mode.03-08-2012
20120025895POWER SUPPLY UNIT AND ELECTRONIC APPARATUS USING THE SAME - An electronic apparatus capable of saving power is provided. The electronic apparatus includes a buffer, a central processing unit (CPU), and a power supply unit. The power supply unit includes a mechanical switch circuit, a first switch circuit, and a second switch circuit. The first switch circuit is capable of being turned on by the mechanical switch circuit to receive power from a power input port and providing power to the buffer. The second switch circuit is capable of being turned on by the mechanical switch circuit to receive power from the power input port through the first switch circuit and providing power to the CPU, and the CPU being operable to generate a control signal to turn off the second switch circuit to interrupt the power provided to the CPU.02-02-2012
20120062308POWER SWITCH DESIGN AND METHOD FOR REDUCING LEAKAGE POWER IN LOW-POWER INTEGRATED CIRCUITS - Power switching circuits and power management techniques are provided that can reduce static power of ICs, including digital core processors. In one embodiment, the power switching circuit includes a footer (power-gating transistor) between the core and a ground rail and at least two additional power-gating transistors parallel to the footer. The power-gating transistors are controlled by respective control signals to enable selective switching. In a specific embodiment, for each sleep mode, at most, a single one of the transistors is turned on. Multiple sleep modes are accomplished according to the relative sizing of the additional power-gating transistors. A larger of the additional transistors is used to provide a standby mode during short idling times by providing a fast wake-up time and some reduction in static power. For standby modes during longer idling periods, smaller sized transistors are turned on. For longest idling periods, all transistors are turned off.03-15-2012
20120062307System and Method for Switch Leakage Cancellation - In accordance with embodiments of the present disclosure, a circuit may include a transmission switch and a dummy switch coupled at its output to the output of the transmission switch. The transmission switch may be configured to be selectively enabled and disabled based on a control signal received at a gate of the transmission switch. The transmission switch may be further configured to receive a first polarity of a differential signal at its input and pass the first polarity of the differential signal to its output when enabled. The dummy switch may be configured to be disabled and to receive a second polarity of the differential signal at its input, the second polarity of opposite polarity of the first polarity.03-15-2012
20120154018HIGH FREQUENCY SEMICONDUCTOR SWITCH - There is provided a high frequency semiconductor switch having an FET designed in consideration of characteristics required for a transmission terminal and a reception terminal. The high frequency semiconductor switch includes a plurality of field effect transistors that each include a source region and a drain region formed on a substrate to be spaced apart by a predetermined distance, a gate formed on the substrate to be disposed at the predetermined distance, a source contact formed on the substrate to be connected with the source region, and a drain contact formed on the substrate to be connected with the drain region. A distance between a source contact and a drain contact of a reception terminal side transistor is longer than a distance between a source contact and a drain contact of a transmission terminal side transistor.06-21-2012
20120105130RECEIVING CIRCUIT, LSI CHIP, AND STORAGE MEDIUM - A receiving circuit with a simple circuit structure for performing wireless communication utilizing electromagnetic induction is provided. An LSI chip and a storage medium where wireless communication utilizing electromagnetic induction is performed and the circuit scale and circuit size can be reduced are provided. The following receiving circuit may be used: a parallel circuit where two diode elements whose directions are opposite are connected in parallel is used, one end of the parallel circuit is connected to the other end of a coil whose one end is connected to a ground potential line, and a capacitor is connected in series with the other end of the parallel circuit. A transistor whose leakage current is markedly reduced may be used as a diode in the receiving circuit. Such a receiving circuit may be used in an LSI chip or a storage medium.05-03-2012
20110089992Systems for Accurate Multiplexing - The disclosure presented herein provides example embodiments of systems for accurate multiplexing. The systems and methods presented may be suitable for non-limiting examples of analog to digital conversion with a switched input voltage (for a switched capacitor application) or any circuit with high voltage/high accuracy voltage multiplexing. In an example embodiment, pulsed current sources may be implemented to rapidly turn on and turn off the selected and unselected multiplexer ports while maintaining relatively low power consumption. A Kelvin input port may allow a high voltage input to be accurately sensed by avoiding a voltage drop associated with a selected pass gate p-channel FET channel resistance and parasitic wire resistance. The Kelvin input port biases the gate of a pass FET structure whose body terminals are allowed to remain floating.04-21-2011
20110089991RF BUFFER CIRCUIT WITH DYNAMIC BIASING - An RF buffer circuit for a voltage controlled oscillator (VCO) includes dynamic biasing circuitry to selectively flip the phase of the output voltage waveform. In a CMOS implementation, a PMOS/NMOS pair is employed in an output path. During a high (voltage) swing mode condition, the phase of the output is flipped such that the output waveform is in phase with the voltages appearing at the gates of the PMOS/NMOS pair. The technique thereby reduces peak gate-to-drain voltages and allows for improved reliability of the MOS devices in a configuration amenable to low phase noise and low power consumption.04-21-2011
20110109371ENERGY-SAVING CIRCUIT FOR A PERIPHERAL DEVICE, PERIPHERAL DEVICE, SWITCHING DEVICE AND METHOD OF OPERATION - An energy-saving circuit applies to a peripheral device for connection to a data bus of a host system. The energy-saving circuit includes a monitoring circuit for monitoring a communication via the data bus, a holding circuit for holding a connection state of the peripheral device, at least one switching element for interrupting a supply voltage for the peripheral device, and a control circuit. The control circuit is set up to recognize by means of the monitoring circuit the beginning of an idle state of the data bus, to hold the connection state of the peripheral device by activation of the holding circuit upon recognition of the idle state, and to interrupt the feeding of a supply voltage for the peripheral device by opening the at least one switching element.05-12-2011
20100097118Activating an Information Handling System Battery From a Ship Mode - In some embodiments, a method for activating an information handling system battery without using AC power is provided. One or more switches associated with a battery are maintained in a ship mode state during shipping of the information handling system such that the battery remains disconnected from particular information handling system components during shipping. In response to a user input, a power-on device generates and communicates a power-on signal to a battery management unit (BMU) of the battery. In response to receiving the power-on signal, the BMU activates the one or more switches from the ship mode state, which connects the battery to the particular information handling system components. The power-on device generates and communicates the power-on signal to the BMU, and the BMU activates the one or more switches from the ship mode state, while the information handling system is not connected to any AC power source.04-22-2010
20100244929METHODS AND SYSTEMS FOR CONTROLLING ELECTRICAL POWER TO DC LOADS - Fixed Frequency, Fixed Duration power controls methods and systems are described for application of power to electrical loads. FFFD techniques according to the present disclosure utilize power train pulses with fixed-frequency fixed-duration pulses to control power applied to a load. The load can be any type of DC load. FFFD techniques allows for controlled variation of the fixed length of the ON pulse, the Fixed length of the OFF or recovery period, the total time period for one cycle, and/or the number of pulses in that time period. Applications to electric motors, electric lighting, and electric heating are described. Related circuits are also described.09-30-2010
20100052768GATE-CHARGE RETAINING SWITCH - This invention provides a means and method for preventing unwanted semiconductor turn-on and turn-off, caused by a high rate of voltage change, without significantly affecting the desired ON and OFF transitions of the semiconductor. According to this invention, time is provided during either or both bistable ON and OFF semiconductor states, during which the semiconductor gate is allowed to float, neither being driven ON or OFF, and circuitry for lowering gate-node impedance at non-transitional times to prevent state disruptions by dV/dT is provided.03-04-2010
20120126879Apparatus and method for controlling power gating in an integrated circuit - A technique for controlling power gating in an integrated circuit is provided. The integrated circuit comprises a block of components to be power gated, and power gating circuitry for selectively isolating the block of components from the source voltage supply in order to achieve such power gating. Voltage regulator circuitry is used to provide a control voltage to the power gating circuitry when performing such power gating operations, the control voltage being settable to any of a plurality of predetermined voltage levels. An adaptive controller receives operating parameter data from either or both of the block of components and the power gating circuitry, that operating parameter data being indicative of leakage current. The adaptive controller then issues a feedback control signal to the voltage regulator circuitry whose value is dependent on the received operating parameter data. The voltage regulator circuitry is then responsive to the feedback control signal to change the control voltage between the plurality of predetermined voltage levels, until the operating parameter data indicates that a desired leakage current has been obtained within the power gating circuitry. Such an approach enables a balance to be achieved between reducing leakage current and reducing wear out of the power gating circuitry.05-24-2012
20120161848AREA EFFICIENT EMI REDUCTION TECHNIQUE FOR H-BRIDGE CURRENT MODE TRANSMITTER - The invention relates to a driver circuit used to transmit a digital signal from a source device to a destination device. The driver circuit provides a controlled switching time to improve digital signal quality, while reducing electromagnetic interference. In the circuit, a pair of first switches of a first plurality are coupled in parallel between a first current node and respective ones of first and second output terminals. A plurality of pairs of second switches of a second plurality are coupled in parallel between a respective second current node and the first and second output terminals. Timing circuitry applies input signals to the pair of first switches and successive input signals to the pairs of second switches so as to develop a staggered voltage across a load coupled between the first and second output terminals.06-28-2012
20120161849POWER SUPPLY CIRCUIT FOR PCI-E SLOT - A power supply circuit for a PCI-E slot includes a control chip, a first electronic switch, and a second electronic switch. The control chip determines a status of a motherboard, outputting a control signal. A first terminal of the first electronic switch is connected to the control chip to receive the control signal, and connected to a +3.3V dual power supply of the motherboard through a first resistor. A second terminal of the first electronic switch is grounded. A third terminal of the first electronic switch is connected to a first terminal of the second electronic switch, and connected to the +3.3V dual power supply through a second resistor. A second terminal of the second electronic switch is connected to the +3.3V dual power supply. A third terminal of the second electronic switch is connected to a PCI-E slot.06-28-2012
20110181343Power controlling integrated circuit and retention switching circuit - A power control integrated circuit is provided having a voltage switching device and a retention switching device that has an input from an overdrive voltage supply such that in a retention enabled configuration a retention switching device is switched on more strongly relative to being both coupled to and driven from the voltage supply input signal associated with the voltage switching device. An overdriven retention switching device is provided as a separate entity from the voltage switching device itself and a computer readable storage medium is provided storing a data structure comprising a standard cell circuit definition for use in generating validating the circuit layout of a circuit cell of an integrated circuit. The circuit cell comprising an overdriven retention switching device. A further data structure corresponding to a standard cell is provided comprising an overdriven retention switching device and a voltage switching device and yet a further standard cell data structure is provided comprising an overdriven voltage switching device.07-28-2011
20120133419TRIGGER CIRCUIT AND RECTIFIER, IN PARTICULAR FOR A SELF-POWERED MICROSYSTEM HAVING A PIEZOELECTRIC MICROGENERATOR - For detecting a sufficiently large voltage level and providing sufficient output power, a trigger circuit is provided. A rectifier can also be provided, providing effectively greater output power compared to known solutions at the same input voltage. Two competing field effect transistors are used in the trigger circuit. A field effect transistor connected as a diode is connected in parallel to an active rectifier in the rectifier circuit. The trigger circuit and rectifier are useable in a self-powered microsystem including a piezoelectric microgenerator.05-31-2012
20100013542Driving transistor control circuit - A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.01-21-2010
20120188002MODULARIZED THREE-DIMENSIONAL CAPACITOR ARRAY - A modularized capacitor array includes a plurality of capacitor modules. Each capacitor module includes a capacitor and a switching device that is configured to electrically disconnect the capacitor. The switching device includes a sensing unit configured to detect the level of leakage of the capacitor so that the switching device disconnects the capacitor electrically if the leakage current exceeds a predetermined level. Each capacitor module can include a single capacitor plate, two capacitor plates, or more than two capacitor plates. The leakage sensors and switching devices are employed to electrically disconnect any capacitor module of the capacitor array that becomes leaky, thereby protecting the capacitor array from excessive electrical leakage.07-26-2012
20120188001ELECTRONIC CONTROL APPARATUS HAVING SWITCHING ELEMENT AND DRIVE CIRCUIT - An electronic control apparatus includes a switching element having a control terminal; an ON-drive constant-current circuit for supplying a constant current to the control terminal, thereby charging the control terminal of the switching element with electrical charge; an OFF-drive switching element for discharging electrical charge from the control terminal of the switching element by being turned ON; and a control circuit adapted to control the ON-drive constant-current circuit and the OFF-drive switching element in response to a drive signal being inputted, thereby controlling the voltage of the control terminal of the switching element to drive the switching element. The ON-drive constant-current circuit includes a current control transistor and a current detection element. The control circuit controls the current control transistor based on the voltage of the current detection resistor and detects abnormality in the ON-drive constant-current circuit based on a source-drain voltage of the current control transistor.07-26-2012
20120229191NEUTRAL SWITCHING HIGH SPEED AC TRANSFER SWITCH - A hybrid neutral transfer switch in an electrical system to transfer a load between multiple AC power sources is provided. The hybrid neutral transfer switch includes a neutral gate controlled device connected to a neutral input of each of the multiple power sources and a mechanical transfer switch that switches between the neutral input of each of the power sources. During the transfer of power from one power source to another power source, the neutral gate controlled devices are activated and/or deactivated in conjunction with the switching of the mechanical transfer switch from one neutral input to another neutral input.09-13-2012
20110121882CIRCUIT FOR DETECTING MANAGEMENT ENGINE STATE - A circuit for detecting management engine (ME) state of a computer includes first and second electrical switches, and an indicating circuit. The first and second electrical switches are connected to a south bridge of the computer and respectively receive an ME state signal and a startup signal from the south bridge. The ME state signal and startup signal are operable to turn on or turn off the first and second electrical switches to control the indicating circuit to indicate ME state of the computer.05-26-2011
20100327946BOOST MECHANISM USING DRIVER CURRENT ADJUSTMENT FOR SWITCHING PHASE IMPROVEMENT - System and method for providing a boost current to a switching transistor gate is disclosed. A boost capacitor precharged to a voltage level above a gate-source voltage is coupled to a switching transistor gate at the beginning of a switch-on phase. The boost capacitor is decoupled from the switching transistor gate when a boost capacitor voltage falls below the gate-source voltage and is again precharged to the voltage level above the gate-source voltage. A second-phase resistance is coupled between a supply voltage and the switching transistor gate. The second-phase resistance value is selected based upon a current peak detected in the switching transistor. A switch-off capacitor precharged to a voltage level below the gate-source voltage may be coupled to the switching transistor gate at the beginning of a switch-of phase.12-30-2010
20100327945PORTABLE OBJECT WITH SELF SWITCHING DEVICE - A portable electronic device 12-30-2010
20100327944Signal Buffer Amplifier - A signal buffer amplifier with high linearity is provided. A circuit includes a first transistor having a first gate terminal, a first source terminal, and a first drain terminal. The circuit also includes a second transistor having a second gate terminal, a second source terminal, and a second drain terminal, the second drain terminal coupled to the first source terminal. The circuit further includes a first signal path coupled in between a signal input and the first gate terminal, a second signal path coupled in between the signal input and the second gate terminal, and a signal output coupled to the second source terminal. The first signal path includes a filter.12-30-2010
20110001544Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals - Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.01-06-2011
20120268194SEMICONDUCTOR DEVICE - In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.10-25-2012
20120081171SWITCHING DEVICE - A switching device includes: a first switching circuit, having a control node coupled to a first control signal, and arranged to selectively couple a signal node to a first amplifying circuit according to the first control signal; and a first control circuit, having a first control node and a second control node coupled to the control node of the first switching circuit and the signal node, respectively, wherein when the first switching circuit is controlled to electrically disconnect the signal node from the first amplifying circuit and a voltage level of the signal node reaches a first predetermined voltage level, the first control circuit is arranged to make the control node of the first switching circuit electrically connected to the signal node.04-05-2012
20120326765REFERENCE CURRENT DISTRIBUTION - Example reference current distribution circuitry described herein include current mirrors having resistive elements of varying sizes between gate nodes of sense amplifier transistors along a voltage distribution line. Examples of counter coupling capacitances which may be coupled to the gate nodes of sense amplifier transistors are also described.12-27-2012
20130009692Inductive Load Power Switching Circuits - Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.01-10-2013
20130021086HIGH CAPACITY ELECTRONIC SWITCH - Embodiments of the present invention provide an electronic switch for commodity use. Specifically, embodiments of this invention provide a high capacity intelligent electronic switch for commodity use. A flexible film substrate is used along with a field-effect transistor (FET) to produce a commodity switch. Multiple printed flexible electronics PFE substrates are stacked to and integrated into an electronic switch system. Various methods are used to measure power consumption within the switch. The modular cell design allows for horizontal and vertical scaling.01-24-2013
20080252358Circuit and method for reducing charge injection and clock feed-through in switched capacitor circuits - A low charge injection, low clock feed-through switch (10-16-2008
20110273223SIGNAL DISTRIBUTION DEVICE AND DISPLAY DEVICE - A peripheral region of a display panel includes a signal distribution device (11-10-2011
20110273222ELECTRICALLY TUNABLE CONTINUOUS-TIME CIRCUIT AND METHOD FOR COMPENSATING A POLYNOMIAL VOLTAGE-DEPENDENT CHARACTERISTIC OF CAPACITANCE - A capacitance compensation circuit includes an input terminal, a plurality of switches coupled to the input terminal, a plurality of varactors coupled to the plurality of switches, and a plurality of blocking capacitors coupled between the plurality of switches and the plurality of varactors. The capacitance compensation circuit further includes a plurality of adjustable biasing circuits to precisely compensate for linear and parabolic voltage dependent components of an input or other capacitor. Two such circuits can be used with a single input terminal to compensate for both increasing and decreasing voltage dependent characteristics of a target capacitor.11-10-2011
20120274385Transmission Gate - A transmission gate includes first and second transmission path terminals, a series connection of first and second field effect transistors (FETs), and a control circuit. The channels of the first and second FETs are coupled in series between the first transmission path terminal and the second transmission path terminal, such that a channel contact of the first FET is coupled to the second transmission path terminal and a channel contact of the second FET is coupled to the first transmission path terminal. The control circuit is configured to provide a control voltage for a gate contact of the first FET and a control voltage for a gate contact of the second FET, such that the control voltage for the gate contact of the first FET is, in a switch-off state of the transmission gate, based on a voltage present at the first transmission path terminal, and such that the control voltage for the gate contact of the second FET is, in the switch-off state of the transmission gate, based on a voltage present at the second transmission path terminal.11-01-2012
20110234297SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS CONTROL TECHNIQUE - Provided is a control technique of a semiconductor integrated circuit capable by which power on/shut-off of a power shut-off area at an optimum speed in accordance with variations in fabricating devices as suppressing the malfunction of a circuit during operation in the power on/shut-off. A semiconductor integrated circuit includes: an always-on area; a power shut-off area; and a plurality of power-supply switches connected to the power shut-off area for supplying or shutting off the power to the power shut-off area.09-29-2011
20110309874SEMICONDUCTOR SWITCHING SYSTEM - According to one embodiment, a semiconductor switch includes a first element that includes a switching element and an anti-parallel diode. The switching element has a breakdown voltage and is coupled to a control terminal and second and third terminals. The semiconductor switch further includes a second element having a breakdown voltage lower than that of the first element. The second element is coupled to a control terminal and second and third terminals. The semiconductor switch also includes a flyback diode having a breakdown voltage substantially similar to that of the first element. A negative electrode of the first element is connected to a negative electrode of the second element and the flyback diode is connected in parallel between a positive terminal of the first element and a positive terminal of the second element. The control terminal for the first element and the control terminal for the second element are coupled to one or more control circuits independently of each other.12-22-2011
20120007654SYSTEM AND METHOD OF TRANSISTOR SWITCH BIASING IN A HIGH POWER SEMICONDUCTOR SWITCH - A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.01-12-2012
20130194026Half Bridge Flyback and Forward - A circuit includes a high-side switch, a low-side switch, a diode, a transformer having a primary winding and a secondary windowing, and an input connected to a first terminal of the primary winding. The high-side switch has a source, a gate connected to a drive source and a drain connected to a second terminal of the primary winding. The low-side switch has a source connected to ground, a gate connected to a drive source and a drain connected to the source of the high-side switch. The diode is connected between the gate of the high-side switch and the first terminal of the primary winding. The diode forms a current loop with the primary winding and the high-side switch to circulate current when low side switch is off until the high side switch turns off.08-01-2013
20120038409Nanotechnology - An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.02-16-2012
20120075003ELECTRONIC CIRCUIT - An electronic circuit includes: first through third transistors having a control terminal, first and second terminals; a first direct current path supplying a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; a second direct current path that is different from the first direct current path and supplies a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; and a common coupling point coupling the first direct current path and the second direct current path in common.03-29-2012
20120086498HIGH-VOLTAGE SWITCH USING THREE FETS - Switch circuits are disclosed, for providing a single-ended and a differentially switched high-voltage output signals by switching a high supply voltage in response to at least one logic-level control signal. The switch that provides the single-ended switched high-voltage output signal includes a chain of at least three serially coupled field effect transistors (FETs). The chain receives the high supply voltage and switches it to output the high-voltage output signal. The switch that provides the differentially switched high-voltage output signal includes two differentially coupled chains, each having at least three serially coupled FETs. The chains receive the high supply voltage and switch it to output the differential high-voltage output signal. A control/bias circuit provides a control voltage to at least one of the FETs in the chains, responsive to the control signal.04-12-2012
20120086497COMPOUND FIELD EFFECT TRANSISTOR WITH MULTI-FEED GATE AND SERPENTINE INTERCONNECT - Aspects provide for reducing the size and cost of a compound semiconductor power FET device while increasing yield and maintaining current handling capabilities of the FET by distributing portions of the current in parallel to sections the source and drain fingers to maintain a low current density, and applying the gate signal to both ends of the gate fingers to increase yield. The current to be handled by the FET may be divided among a set of electrodes arrayed along the width of the source or drain fingers and oriented to cross the fingers along the length of the source and drain fingers. The current may be conducted from the electrodes to the source and drain fingers through vias disposed along the surface of the fingers. Heat developed in the source, drain, and gate fingers may be conducted through the vias to the electrodes and out of the device.04-12-2012

Patent applications in class Field-effect transistor

Patent applications in all subclasses Field-effect transistor