Class / Patent application number | Description | Number of patent applications / Date published |
327389000 | Insulated gate FET (e.g., MOSFET, etc.) | 33 |
20080211565 | Mute Circuit - AnNchMOS transistor ( | 09-04-2008 |
20080218244 | Analog switch - An analog switch comprises a first transistor, a second transistor, the drain and the source thereof being connected between said first input terminal and a second output terminal whereto said second signal is output and the gate thereof being grounded or connected to a supply voltage node, a third transistor, the drain and the source thereof being connected between a second input terminal whereto said second signal is input and said second output terminal and said third transistor being turned on and off by a control signal provided to the gate thereof; and a fourth transistor, the drain and the source thereof being connected between said second input terminal and said first output terminal and the gate thereof being grounded or connected to a supply voltage node. | 09-11-2008 |
20080238526 | Fast Switching Circuit With Input Hysteresis - The present invention relates to a switching circuit and a method of controlling a threshold voltage of a semiconductor switching element of the switching circuit, wherein a bulk voltage of the semiconductor switching element (M | 10-02-2008 |
20090153223 | IGBT-DRIVER CIRCUIT FOR DESATURATED TURN-OFF WITH HIGH DESATURATION LEVEL - A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch. | 06-18-2009 |
20100283527 | Analog Switch - An analog switch comprises a first transistor, a second transistor, the drain and the source thereof being connected between said first input terminal and a second output terminal whereto said second signal is output and the gate thereof being grounded or connected to a supply voltage node, a third transistor, the drain and the source thereof being connected between a second input terminal whereto said second signal is input and said second output terminal and said third transistor being turned on and off by a control signal provided to the gate thereof; and a fourth transistor, the drain and the source thereof being connected between said second input terminal and said first output terminal and the gate thereof being grounded or connected to a supply voltage node. | 11-11-2010 |
20120286845 | CONSTANT VGS ANALOG SWITCH - Apparatus and methods for a switch circuit to provide a substantially constant gate-to source voltage to a passgate are provided. In an example, a switch circuit includes a summing circuit having an output configured to couple to the gate of a passgate, the summing circuit can be configured to maintain a substantially constant voltage between the gate and the source of the pass gate. | 11-15-2012 |
20130194024 | SEMICONDUCTOR DEVICE AND COMMUNICATION INTERFACE CIRCUIT - A semiconductor device prevents recognition failure in mutual recognition between a host and a device compliant with USB Specifications. The semiconductor device includes: an interterminal opening/closing section having a plurality of first conductivity type MOS transistors, the respective sources or drains of which are cascaded, in which the source or drain of a first-stage MOS transistor among the cascaded MOS transistors is used as a first terminal, the source or drain of a final-stage MOS transistor among the cascaded MOS transistors is used as a second terminal, and the respective gates of the cascaded MOS transistors receive a control signal for controlling the opening or short-circuiting between the first and second terminals; and a current bypass section that reduces a current flowing into either one connection node coupling the respective sources or drains of the cascaded MOS transistors. | 08-01-2013 |
20130222044 | POWER TRANSISTOR DRIVING CIRCUITS AND METHODS FOR SWITCHING MODE POWER SUPPLIES - A power supply controller is provided for providing a drive current to a control terminal of a power transistor in three time intervals. The controller includes control circuits configured to control the drive current in multiple stages. During a first time interval, first drive current includes a current spike for turning on the power transistor in response to a start of the control signal pulse. During a second time interval, a second drive current includes a ramping current substantially proportional to a magnitude of a current through the power transistor. During a third time interval, current flow to the power transistor is at least partially turned off before an end of the control signal pulse. | 08-29-2013 |
20130314145 | Device for Switching at least one Energy Storage Means - A device for switching at least one energy storage device includes a parallel circuit of transistors that is connected in series with the energy storage device. Gate terminals of the transistors are connected to one another. At least one of the transistors from the parallel circuit is configured to be operated in avalanche breakdown and has an avalanche voltage which is lower than respective avalanche voltages of the remaining transistors. | 11-28-2013 |
20140320197 | GATE DRIVER CIRCUIT - In High Voltage CMOS technologies the supply voltage is typically higher than the maximum allowed gate voltage. In a switching output stage of amplifiers such class-D amplifiers and DC-DC converters the gates of the power field effect transistors need to be charged quickly. This requires a gate driver that is capable of delivering large currents without exceeding the maximum allowed voltage on the gate of the power field effect transistors. | 10-30-2014 |
20140333366 | BATTERY MANAGEMENT SYSTEM WITH MOSFET BOOST SYSTEM - A boost converter for driving the gate of n-channel MOSFET power devices is described. The boost converter includes a monitoring circuit and a kick start circuit to quickly bring the boost converter online when required to drive the MOSFET on. | 11-13-2014 |
20150070075 | RADIO FREQUENCY SWITCH WITH IMPROVED LINEARITY - A Radio Frequency (RF) switch element is described. The RF switch element comprises a primary transistor element for facilitating switching an RF signal between circuit nodes. A pair of secondary transistor elements are also provided. The pair of secondary transistor elements are co-operable with the primary transistor element and provide respective signal paths which have a lower impedance level than an intrinsic element associated with the primary transistor element. | 03-12-2015 |
20150137871 | GATE DRIVER AND POWER MODULE EQUIPPED WITH SAME - A gate driver that drives a field-effect transistor on the basis of an input signal includes a comparator that compares an applied voltage applied between the drain and the source of a field-effect transistor to a reference voltage for detecting noise occurring between the drain and the source of the field-effect transistor, and a gate voltage switching circuit that, if the field-effect transistor is off, switches the voltage applied between the gate and the source of the field-effect transistor from a first voltage to a second voltage when the output of the comparator transitions from a state indicating that the applied voltage between the drain and the source is less than the reference voltage to a state indicating that the applied voltage between the drain and the source is equal to or greater than the reference voltage. | 05-21-2015 |
327390000 | With capacitive bootstrapping | 15 |
20080272824 | CMOS RF switch for high-performance radio systems - A wireless device includes high-performance CMOS RF switches that include serially connected transistors coupled between an input terminal and an output terminal, with an inductor coupled from the input to the output that resonates out the capacitance of the transistors to improve isolation. The transistors have a floating/bootstrapped body with remote body contacts. | 11-06-2008 |
20080303580 | CONTROL CIRCUIT FOR A HIGH-SIDE SEMICONDUCTOR SWITCH FOR SWITCHING A SUPPLY VOLTAGE - A high-side semiconductor switch control circuit for switching a positive supply voltage is provided, having a circuit to provide a drive voltage for the high-side semiconductor switch, a driver circuit for driving the high-side semiconductor switch based on the control circuit, wherein both the circuit for providing the drive voltage as well as the driver circuit operate in relation to a floating switching point, an input circuit portion that receives a control signal related to ground, and a level shift circuit portion that is connected between the input circuit portion and the driver circuit portion and set up so as to transform the control signal related to ground into a floating voltage level for the driver circuit portion. | 12-11-2008 |
20090051405 | ADAPTIVE CAPACITANCE FOR TRANSISTOR - A circuit includes a transistor having a source, drain, a gate, and an electrode structure. A source terminal is coupled to the source. A drain terminal coupled to the drain. Terminals are coupled to the gate and to the electrode structure. A switch is coupled to the source, the gate terminal and the electrode terminal to selectively couple one of the gate and electrode structure to the source. In further embodiments, a second switch is used to selectively couple a resistor between the gate and the source. A method is used to control the switches to keep the transistor in an off state or allow it to switch to an on state. | 02-26-2009 |
20090108908 | BOOTSTRAP CIRCUIT AND STEP-DOWN CONVERTER USING SAME - The invention provides a bootstrap circuit which enables adequate charging of a capacitor used in the bootstrap circuit even during light load or no load conditions, and which does not impede the performance of a step-down converter proper, as well as a step-down converter using the bootstrap circuit. A capacitor charge/discharge path formation mechanism is provided in the bootstrap circuit that enables a terminal of a capacitor used in the bootstrap circuit to be separated and made independent from a step-down converter circuit. | 04-30-2009 |
20090189674 | Circuit that facilitates proximity communication - One embodiment of the present invention provides a system that facilitates proximity communication. This system includes a circuit containing a bootstrap transistor and a pass-gate transistor, where the drain of the bootstrap transistor is coupled to the gate of the pass-gate transistor. Note that a first coupling capacitance exists between the source of the pass-gate transistor and the drain of the bootstrap transistor and a second coupling capacitance exists between the drain of the pass-gate transistor and the drain of the bootstrap transistor. During operation, the gate and the source of the bootstrap transistor are coupled to a high voltage, thereby causing an intermediate voltage at the drain of the bootstrap transistor. When the source of the pass-gate transistor transitions to a high voltage, the first coupling capacitance and the second coupling capacitance boost the voltage at the gate of the pass-gate transistor higher than the high voltage, thereby enabling the high voltage at the source of the pass-gate transistor to pass to the drain of the pass-gate transistor. | 07-30-2009 |
20090201071 | Bootstrap circuit - Disclosed herein is a bootstrap circuit configured to employ first, second and third transistors of the same conduction type wherein: a node section connecting a gate electrode of the first transistor and a specific one of the source and drain areas of a third transistor to each other is put in a floating state when the third transistor is put in a turned-off state; a gate electrode of the second transistor is connected to a clock supply line which conveys the other one of the two clock signals; and a voltage-variation repression capacitor is provided between the node section and a first voltage supply line. | 08-13-2009 |
20100164597 | Bootstrap Transistor Circuit - A switch circuit is described, where a switch to be controlled is formed of two NMOS transistors having their source terminals connected together and their gate terminals connected together. Their drain terminals are the input and output terminals of the switch. A driver circuit controls a bootstrap circuit that is formed of a latching circuit and a capacitor. When the switch is in an off state, the driver circuit connects the capacitor to a charging voltage source for charging the capacitor to a bootstrap voltage, and applies a non-zero voltage across the latching circuit. When the driver circuit is controlled to turn on the switch, the driver circuit disconnects the capacitor from the charging voltage source, and the latching circuit becomes conductive and effectively connects the capacitor across the gate and source terminals of the switch to turn it on with the bootstrap voltage. The bootstrap voltage across the capacitor maintains the latching circuit in a latched conductive state. | 07-01-2010 |
20110080205 | Switch Driving Circuit And Driving Method Thereof - The present invention relates to a switch driving circuit and a driving method thereof. | 04-07-2011 |
20120242393 | CONVERTER INCLUDING A BOOTSRAP CIRCUIT AND METHOD - In accordance with an embodiment, a converter includes a circuit and method for charging a bootstrap capacitor. The circuit monitors a voltage across the bootstrap capacitor and enables charging the bootstrap capacitor in response to the voltage across the bootstrap capacitor being less than a threshold voltage. | 09-27-2012 |
20130154715 | Bootstrapped Switch with a Highly Linearized Resistance - Systems and methods are disclosed for operating a highly linearized resistance for a switch through use of a bootstrapped features. In one exemplary implementation, there is provided a method and system that implements a method for operating a circuit configured to provide a highly linearized resistance including receiving a signal via a bootstrapped switch, coupling the received signal to a gate if the received signal is high, receiving a signal via a switch control input coupled to a high impedance element. Moreover, the method includes coupling the high impedance element to the gate and turning off the switch via a gate turn off when the gate turn off pulls the gate low. | 06-20-2013 |
20130278324 | SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE - A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal. | 10-24-2013 |
20140266395 | AC COUPLING CIRCUIT WITH HYBRID SWITCHES - A coupling apparatus having a first branch and a second branch is disclosed. The first branch generally comprises (A) a first switch group configured to connect an input signal to an output node through a first capacitor, and (B) second switch group configured to connect either (i) a second signal, or (ii) a ground voltage, to the output node through a second capacitor. The second branch generally comprises (A) a third switch group configured to connect the input signal to the output node through a third capacitor, and (B) a fourth switch group configured to connect either (i) the second signal, or (ii) the ground voltage, to the output node through a fourth capacitor. | 09-18-2014 |
20150311891 | HIGH VOLTAGE BOOTSTRAP GATE DRIVING APPARATUS - A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage. | 10-29-2015 |
20150341024 | Bootstrapped Switch With A Highly Linearized Resistance - Systems and methods are disclosed for operating a highly linearized resistance for a switch through use of a bootstrapped features. In one exemplary implementation, there is provided a method and system that implements a method for operating a circuit configured to provide a highly linearized resistance including receiving a signal via a bootstrapped switch, coupling the received signal to a gate if the received signal is high, receiving a signal via a switch control input coupled to a high impedance element. Moreover, the method includes coupling the high impedance element to the gate and turning off the switch via a gate turn off when the gate turn off pulls the gate low. | 11-26-2015 |
20160197603 | DECOUPLING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | 07-07-2016 |
327391000 | Complementary metal-oxide semiconductor (CMOS) | 5 |
20090058496 | CIRCUIT ARRANGEMENT AND CORRESPONDING METHOD FOR CONTROLLING AND/OR PREVENTING INJECTION CURRENT - In order to further develop a circuit arrangement ( | 03-05-2009 |
20100244928 | Method and System to Reduce Electromagnetic Radiation for Semiconductor Devices - Reducing electromagnetic radiation from semiconductor devices. At least some of the illustrative embodiments are methods comprising driving a Boolean state to a signal pad of a semiconductor device (the driving through a transistor with a first drain-to-source impedance during the driving), and maintaining the Boolean state applied to the signal pad through the transistor with a second drain-to-source impedance, higher than the first drain-to-source impedance. | 09-30-2010 |
20110298523 | APPARATUS AND METHOD FOR WELL BUFFERING - Apparatuses and methods for well buffering are disclosed. In one embodiment, an apparatus includes a complimentary metal oxide semiconductor (CMOS) switch having a gate, a drain, a source, and a well. The source and drain are formed in the well, and the gate is formed adjacent the well between the source and drain. The source is configured to receive a bias voltage from a power amplifier. The apparatus further includes a gate bias control block for biasing the gate voltage of the switch, a well bias control block for biasing the well voltage of the switch, and a buffer circuit for increasing the impedance between the well bias control block and the well of the switch. | 12-08-2011 |
20140132332 | INTERLEAVED TRANSIENT FILTER - An interleaved filter circuit has a delay element configured to receive an input signal. An interleaved output buffer has a first input which receives the input signal and a second input which receives the output of the delay element. An output of the interleaved output buffer is driven when the first input and the second input are at a same logic level. | 05-15-2014 |
20150137872 | VOLTAGE CONTROLLED SWITCHING ELEMENT GATE DRIVE CIRCUIT - A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors. | 05-21-2015 |