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Having semiconductive load

Subclass of:

327 - Miscellaneous active electrical nonlinear devices, circuits, and systems

327100000 - SIGNAL CONVERTING, SHAPING, OR GENERATING

327108000 - Current driver

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DocumentTitleDate
20110199130LOW-POWER HIGH-SPEED DIFFERENTIAL DRIVER WITH PRECISION CURRENT STEERING - In bipolar CMOS or BiCMOS process technologies, drivers (such as mixed mode or hybrid mode drivers) using both bipolar and CMOS transistors (i.e., field effect transistors or FETs) may have undesirable properties, such as reduced speed, ringing, latch-up, or lower electrostatic discharge (ESD) performance. Here, a mixed or hybrid mode driver is provided that employs a current steering circuit (instead of voltages driven differential pair(s) as is done with conventional drivers) to generate pull-down currents that precisely match the voltages in the pull-up portions of driver. It increases the speed and produces smaller output common-mode voltage fluctuation over conventional drivers. Thus, the driver provided here can be produced in BiCMOS process technologies without the undesirable effects of conventional drivers.08-18-2011
20120200320CONTROL CIRCUIT AND METHOD FOR CONTROLLING A POWER SEMICONDUCTOR SWITCH - A driving circuit for driving a power semiconductor switch wherein at least one semiconductor device being provided which is implemented in such a way that it is operated in breakdown in response to the exceeding of a specific collector-emitter voltage of the power semiconductor switch, an output of the at least one semiconductor device being connected via a conductive interconnect to a terminal between the resistors of the resistor series circuit or to the resistor-series-circuit output which is connected to the signal processing unit, and the breakdown voltage of the at least one semiconductor device being selected in such a way that the potential at the output of the at least one semiconductor device is greater than the potential at the gate of the power semiconductor switch in its ON state. The invention further relates to a method for driving a power semiconductor switch.08-09-2012
20130027092Digital Output Driver - A digital output driver is disclosed. In accordance with some embodiments of the present disclosure, a digital output driver may comprise at least one of an output-source PMOS configured to source current during at least a portion of a low-to-high transition of a digital output, wherein the output-source PMOS is configured to mirror a reference PMOS configured to be driven at its gate by a first amplifier and to be biased by a first reference current, and an output-sink NMOS configured to sink current during at least a portion of a high-to-low transition of the digital output, wherein the output-sink NMOS is configured to mirror a reference NMOS configured to be driven at its gate by a second amplifier and to be biased by a second reference current.01-31-2013
20100156475FIELD EFFECT TRANSISTOR WITH ELECTRIC FIELD AND SPACE-CHARGE CONTROL CONTACT - A group III nitride-based transistor capable of achieving terahertz-range cutoff and maximum frequencies of operation at relatively high drain voltages is provided. In an embodiment, two additional independently biased electrodes are used to control the electric field and space-charge close to the gate edges.06-24-2010
20120161821VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE - A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.06-28-2012
20110187416SMART DRIVER FOR FLYBACK CONVERTERS - The present invention discloses a smart driver used in flyback converters adopting a transconductance amplifier to turn on a synchronous rectifier FET, and a comparator to quickly turn off the synchronous rectifier FET.08-04-2011
20100079177SEMICONDUCTOR DEVICE - A light emitting device capable of performing signal electric current write-in operations at high speed and without dispersion in the characteristics of TFTs structuring pixels influencing the brightness of light emitting elements is provided. The gate length L of a transistor in which an electric current flows during write-in of a signal electric current is made shorter than the gate length L of a transistor in which electric current supplied to EL elements flows during light emission, and high speed write-in is thus performed by having a larger electric current flow than the electric current flowing in conventional EL elements. A converter and driver transistor (04-01-2010
20130076406ISOLATED GATE DRIVER ADAPTED FOR PWM-BASED SWITCHING POWER SUPPLY - An isolated gate driver including a driving control circuit, an isolated transformer, an anti-circuit and a secondary processing circuit is provided. The driving control circuit is configured to generate a driving PWM signal for driving a power switch tube. The isolated transformer has a primary winding and a secondary winding. The anti-circuit is connected between the driving control circuit and the primary winding of the isolated transformer, and is configured to suppress a variation of an induced voltage in the secondary winding of the isolated transformer when a duty cycle of the driving PWM signal is sharply decreased. The secondary processing circuit is connected in parallel with the secondary winding of the isolated transformer, and is configured to perform a voltage clamping action on a gate-source voltage of the power switch tube when the duty cycle of the driving PWM signal is sharply decreased.03-28-2013
20130076405SYSTEMS AND METHODS FOR DISCHARGING BUS VOLTAGE USING SEMICONDUCTOR DEVICES - Systems, apparatus, and methods are provided for discharging a voltage bus using a transistor. An exemplary gate drive circuit associated with the transistor includes a pulse generation module having an input and an output and a switched capacitance arrangement coupled between the output and a reference voltage node. The pulse generation module is configured to generate a voltage pulse at its output in response to a control signal at the input. In one embodiment, the control signal results in the voltage pulse having a duty cycle that operates the transistor associated with the gate drive circuit in a linear mode when the switched capacitance arrangement is activated.03-28-2013
20130082746VERTICAL TRANSISTOR HAVING REDUCED PARASITIC CAPACITANCE - A transistor includes a substrate and an electrically conductive material layer stack positioned on the substrate. The electrically conductive material layer stack includes a reentrant profile. A first electrically insulating material layer positioned is in contact with a first portion of the electrically conductive material layer stack. A second electrically insulating material layer is conformally positioned in contact with the first electrically insulating layer, and conformally positioned in contact with a second portion of the electrically conductive material layer stack, and conformally positioned in contact with at least a portion of the substrate.04-04-2013
20130076407CIRCUIT SYSTEM HAVING AT LEAST TWO INVERTER MODULES CONNECTED IN PARALLEL, METHOD FOR CONNECTING AT LEAST TWO INVERTER MODULES IN PARALLEL AND CIRCUIT SUBSTRATE FOR A GATE DRIVER CIRCUIT OF AN INVERTER MODULE - A circuit system having at least two inverter modules connected in parallel, each of which includes an inverter circuit having power semiconductor circuit breakers and a gate driver circuit for controlling the power semiconductor circuit breakers; the gate driver circuit of a first inverter module includes a signal transmission circuit via which a control signal is transmittable from a low-voltage side to a high-voltage side, and a first driver output terminal which is electrically connected to the first driver input terminals of the gate driver circuits of the inverter modules connected in parallel, and via which the high-voltage side control signal or a control signal deduced therefrom is transmittable to the gate driver circuits of the inverter modules connected in parallel. The power semiconductor circuit breakers of the inverter circuits of the inverter modules, connected in parallel to the first inverter module, are controlled based on the transmitted control signal.03-28-2013
20100102856INVERTER CIRCUIT - A first switch (M04-29-2010
20130038355OUTPUT DRIVING CIRCUIT AND TRANSISTOR OUTPUT CIRCUIT - The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a gate of an output transistor; a second driving circuit unit driven by a one-shot pulse generated according to on operation of a second switch, which operates complementarily with the first switch, to discharge a gate-source capacitance of the output transistor; and an output driving voltage clamping unit disposed between a high voltage power source terminal and the gate of the output transistor in parallel with the first driving circuit unit to maintain a gate potential of the output transistor discharged according to the on operation of the second switch is provided.02-14-2013
20130038357DYNAMIC SWITCH DRIVER FOR LOW-DISTORTION PROGRAMMABLE-GAIN AMPLIFIER - A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged so as to selectively apply a pair of drive signals to change the ON/OFF state of the switch, the drive circuit being configured and arranged to generate the drive signals as a function of (a) a pair DC signal components sufficient to change the ON/OFF state of the switch and (b) a pair of time-varying signal components as at least a partial replica of the signal present on the source terminal of each MOSFET so that when applied with the DC signals to the gates of the re-channel MOSFET and p-channel MOSFET respectively, the drive signals will be at the appropriate level to maintain the ON/OFF state of the switch and keep the gate-source voltages of each MOSFET within the gate-source breakdown limit of the MOSFETs.02-14-2013
20130038356OUTPUT DRIVING CIRCUIT AND TRANSISTOR OUTPUT CIRCUIT - Disclosed herein are an output driving circuit and a transistor output circuit. The output driving circuit includes: a reference voltage generating unit generating a reference voltage; a level shift unit including a transistor latch and turning off a first transistor of a driving circuit or driving the first transistor; a driving circuit unit including the first transistor that is driven to apply power to a gate of an output transistor and a second transistor that is driven complementarily to the first transistor to lower a gate voltage of the output transistor and drive the output transistor; and an withstand voltage protecting unit that is driven by receiving a reference voltage and includes a first withstand voltage protecting unit for protecting transistors of the transistor latch and the first transistor for stable operations thereof and a second withstand voltage protecting unit for protecting the output transistor for a stable operation thereof.02-14-2013
20100109718Driving Circuit, and a Pixel Circuit Incorporating the Same - A driving circuit includes: a switch unit permitting transfer of a data signal when operating in an on state; a capacitor having a first end coupled to the switch unit, and a second end; a first transistor having a first terminal for coupling to a second voltage source, a second terminal coupled to the second end of the capacitor and to a load, and a control terminal coupled to the first end of the capacitor; and a second transistor having a first terminal coupled to the second end of the capacitor, a second terminal receiving a bias voltage, and a control terminal coupled to the first terminal of the second transistor.05-06-2010
20100109717Pixel Circuit - A pixel circuit includes an LED having an anode that receives a driving current and a cathode that receives a scan signal, and a driving circuit including: a switch unit operable according to a voltage signal, and adapted for permitting transfer of a data signal when operating in an on state; a capacitor having a first end coupled to the switch unit, and a second end; a first transistor having a first terminal that is coupled to the second end of the capacitor, a second terminal that is coupled to the anode of the LED, and a control terminal that is coupled to the first end of the capacitor; and a second transistor having a first terminal that is adapted for coupling to the voltage source, a second terminal that is coupled to the first terminal of the first transistor, and a control terminal that is adapted for receiving a reference voltage.05-06-2010
20120182050GATE DRIVING CIRCUIT AND DISPLAY DEVICE INCLUDING THE SAME - Embodiments may be directed to a gate driving circuit. The gate driving circuit includes a pre-charge unit, a pull-up unit, a boosting unit, and a discharge unit. The pre-charge unit pre-charges a first node in response to a first input signal. The pull-up unit outputs a first clock signal as a gate driving signal in response to a first node signal of the first node. The boosting unit boosts the first node signal of the first node in response to the first node signal and the first clock signal. The discharge unit discharges the first node to a gate-off voltage level in response to a second input signal and a second clock signal.07-19-2012
20120182049System and Method for Driving a Switch Transistor - In an embodiment, a method of driving a switch transistor includes activating the switch transistor by charging a control node of the switch transistor at a first charging rate for a first time duration. After charging the control node of the switch transistor at the first charging rate, the control node of the switch transistor is further charged at a second charging rate until the control node of the switch transistor reaches a target signal level, where the second charging rate is less than the first charging rate.07-19-2012
20130088266SEMICONDUCTOR DEVICE - A semiconductor device includes first and second power elements and first and second driving circuits. The semiconductor device also includes a resistor having a first end connected to the first power element and a second end connected to the first driving circuit. Furthermore, the semiconductor device includes a switching element connected between the first driving circuit and the first end of the resistor, and turned ON and OFF. When a first input signal is an OFF signal, the first driving circuit causes the first power element to become turned OFF, and when the first input signal is an OFF signal or when a second input signal is an ON signal, the switching element is turned ON.04-11-2013
20120218010SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period.08-30-2012
20120218009CONTROL CIRCUIT OF TRANSISTOR AND METHOD - A control circuit, which controls a transistor including a gate and a field plate, includes: a detecting circuit which detects a driving timing to drive the transistor; a timing controlling circuit which controls a first driving timing to drive the gate and a second driving timing to drive the field plate, in response to the driving timing; and a driving circuit which drives the gate in response to the first driving timing, and drives the field plate in response to the second driving timing.08-30-2012
20120218011GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS - A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.08-30-2012
20130069694SEMICONDUCTOR DEVICE - A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element.03-21-2013
20090066374Drive circuit, light emitting diode head, and image forming apparatus - A drive circuit is provided for selectively driving a driven element. The drive circuit includes a discharge section for discharging charges, which are accumulated in the driven element when the drive element is turned on, when the drive element is turned off. The drive circuit may include a drive element for driving the driven element. The drive element includes a first ground route disposed separately from a second ground route of the driven element. The first ground route is connected to the second ground route through a connection cable. A diode may be disposed between the connection cable and at least one of the first ground route and the second ground route.03-12-2009
20120223746METHOD AND APPARATUS SWITCHING A SEMICONDUCTOR SWITCH WITH A MULTI-STAGE DRIVE CIRCUIT - A multi-stage drive circuit is to be coupled to a semiconductor switch having a drive terminal, a first terminal and a second terminal, to switch the semiconductor switch on and off. The multi-stage drive circuit includes a first drive circuit, a second drive circuit and a selector circuit. The first drive circuit is to be coupled to provide a first drive signal to the drive terminal of the semiconductor switch and the second drive circuit is to be coupled to provide a second drive signal to the drive terminal of the semiconductor switch. The selector circuit is to be coupled to turn on the first and second drive circuits to provide the first and second drive signals to the drive terminal, respectively. The selector circuit turns on the second drive circuit responsive to a voltage between the first and second terminals of the semiconductor switch falling to a threshold value.09-06-2012
20120223745MONOLITHIC LOW IMPEDANCE DUAL GATE CURRENT SENSE MOSFET - A power switch includes a first power transistor having a first source electrode, a first gate electrode, and a first drain electrode, and a second power transistor having a second source electrode, a second gate electrode, and a second drain electrode. The power switch further includes a first pilot transistor which has a third source electrode, a third gate electrode, and a third drain electrode. The first, second and third drain electrodes are electrically connected together. The first and second source electrodes are electrically connected together. The first and third gate electrodes are electrically connected together and can be biased independently from the second gate electrode. The first power transistor is the same size as or smaller than the second power transistor and the first power transistor is larger than the first pilot transistor.09-06-2012
20120223744CONTROL OF SEMICONDUCTOR COMPONENT - An exemplary method and a control circuit are disclosed for controlling a power semiconductor component by producing a control signal (Ucin) for controlling the component, forming a second control signal (Ucout) in the potential of the controlled component from the control signal (Ucin), measuring a current flowing through the component, and comparing the measured current with a set limit. A fault signal (Ufault) having a logical state is provided on the basis of the comparison between the measured current and the set limit, producing a component control signal (Uave) from the fault signal (Ufault) and the second control signal (Ucout). If a fault is indicated, the component control signal has a value between high and low states, and otherwise the state of the component control signal (Uave) equals the state of the second control signal (Ucout).09-06-2012
20110012646BUS LOW VOLTAGE DIFFERENTIAL SIGNALING (BLVDS) CIRCUIT - A differential signaling circuit and a control circuit. The differential signaling circuit includes a first positive driver and a first negative driver. The first negative driver has different impedance than the first positive driver. The first positive driver and the first negative driver together define a first current path between positive and negative power supply terminals. A first output is defined on the first current path intermediate the first positive driver and the first negative driver. The control circuit includes a first driver that drives a transmission line at a first output voltage, a feedback amplifier responsive to the first output voltage to generate a control signal and a metal oxide semiconductor (MOS) driver coupled to the first driver and responsive to the control signal to make impedance of the first driver equivalent to impedance of the transmission line.01-20-2011
20130063189GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.03-14-2013
20130063188POWER MODULE - A power module includes: a drive circuit for driving an IGBT of a semiconductor element; a protection circuit for performing operation for protection of the IGBT if the collector current of the IGBT has reached a trip level; and a control power source voltage detection circuit for detecting a control power source voltage to be supplied to the drive circuit. The protection circuit changes a sense resistor from a resistor to a series circuit with resistors and if the control power source voltage drops to a level lower than a predetermined value, thereby lowering the trip level.03-14-2013
20130063187SOLID-STATE SWITCH DRIVING CIRCUIT FOR VEHICLE - Disclosed herein is a solidstate switch driving circuit for a vehicle. The solidstate switch driving circuit includes an oscillation circuit, a constant voltage circuit, a first Field Effect Transistor (FET), a second FET, a third FET configured, a first time constant circuit, a first time constant circuit, a reverse voltage protection diode, a solidstate power switch, and a second time constant circuit. The first time constant circuit is connected to the drain of the second FET and the drain of the third FET. The reverse voltage protection diode has an N pole and a P pole. The solidstate power switch selectively turns on and off power applied to the load. The second time constant circuit has one side connected to the first time constant circuit and the reverse voltage protection diode, and another side connected to a gate of the solidstate power switch.03-14-2013
20130063186Switching Regulator With Optimized Switch Node Rise Time - A driver circuit for controlling a high-side power switch of a switching regulator includes: a logic circuit configured to generate a gate control signal for turning on the power switch; a diode having coupled to a first power supply voltage; a capacitor having a first electrode coupled to the cathode of the diode and a second electrode coupled to the switching output voltage; and a delay circuit configured to receive the gate control signal and to generate a delayed gate control signal. In operation, the capacitor is precharged to about the first power supply voltage. When the power switch is turned on, a first output drive transistor is turned on to distribute the charge stored on the capacitor to the gate terminal of the high-side power switch, and after the predetermined delay, a second output drive transistor is turned on to drive the output node to a high supply voltage.03-14-2013
20130113524FLEXIBLE LOW POWER SLEW-RATE CONTROLLED OUTPUT BUFFER - An output buffer includes a pullup driver, a pulldown driver, and an output stage. The pullup driver has a drive control input, and an output for providing a pullup drive signal in a push-pull mode in response to receiving a first drive control signal on the drive control input, and in a current limited mode in response to receiving a second drive control signal on said drive control input. The pulldown driver has a drive control input, and an output for providing a pulldown drive signal in the push-pull mode in response to receiving a third drive control signal on the drive control input, and in the current limited mode in response to receiving a fourth drive control signal on the drive control input. The output stage provides a voltage on an output terminal in response to the pullup and pulldown drive signals.05-09-2013
20090237127OPTICAL-SWITCH DRIVE CIRCUIT AND METHOD THEREOF - An optical-switch drive circuit including a driver unit that generates, in response to a control signal, an on/off signal for driving a semiconductor optical amplifier gate switch, and a buffer unit having a high input impedance and connected between an output terminal outputting the on/off signal and the semiconductor optical amplifier gate switch. In the optical-switch drive circuit the buffer unit may include a high-resistance voltage divider that is connected with the output terminal, and an operational amplifier that buffers, and provides to the semiconductor optical amplifier gate switch, a divided voltage of the voltage divider.09-24-2009
20090237126GATE DRIVER FOR SWITCHING POWER MOSFET - A gate driver for switching power MOSFET including a MOS pair, a first conduction path, and a second conduction path is disclosed. The MOS pair electrically coupling gate of the power MOSFET, for controlling turning on or turning off the power MOSFET. The first conduction path electrically couples to gate of the power MOSFET and the MOS pair, and has a constant resistance. The second conduction path electrically coupling to gate of the power MOSFET and the MOS pair, having variable resistance corresponding to gate voltage of the power MOSFET.09-24-2009
20110018592Electric Circuit - As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor.01-27-2011
20130162306METHOD FOR DRIVING SEMICONDUCTOR DEVICE - Provided is a method for driving a semiconductor device, which allows a reduction in scale of a circuit, reduce the power consumption, and increase the speed of reading data. An H level (data “1”) potential or an L level (data “0”) potential is written to a node of a memory cell. Potentials of a source line and a bit line are set to the same potential at an M level (L level06-27-2013
20080309381Device for Controlling a High-Voltage Transistor, in Particular a Mos Transistor of a High-Voltage Radio-Frequency Generator for the Spark Ignition of an Internal Combustion Engine - A control device including: an input terminal for receiving a logic control signal; an output terminal for delivering an output control signal from the high-voltage MOS transistor; a first NMOS control transistor with low internal impedance, which is connected between ground and the output terminal and the gate of which is connected to the input terminal; and a second PMOS control transistor, which is connected between a supply terminal and the output terminal and the gate of which is connected to the input terminal by a bipolar transistor mounted to a common base, and which is current controlled at the emitter thereof by a capacitive connecting circuit.12-18-2008
20120235713WIRING BOARD AND DISPLAY APPARATUS - The present invention provides a wiring board wherein the resistance difference between multiple connection lines is reduced. The wiring board of the present invention comprises: a control region and a peripheral region. The control region includes multiple gate lines extending in a row direction and multiple source lines extending in a column direction. The peripheral region includes a gate driver connected with the gate lines; a source driver connected with the source lines; and multiple connection lines which extend around the control region and which connect the gate driver with the gate lines. Each of the connection lines includes a gate metal portion formed from a material of the gate lines and a source metal portion formed from a material of the source lines. An insulating layer is disposed between the gate metal portion and the source metal portion. The gate metal portion and the source metal portion are connected with each other via a contact portion which penetrates the insulating layer.09-20-2012
20120235712HIGH VOLTAGE SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT - A high voltage semiconductor device is provided and includes an n09-20-2012
20120235710Circuit Arrangement with a MOSFET and an IGBT - A circuit includes at least one FET and at least one IGBT that have their load paths connected in parallel. A voltage limiting circuit is coupled to a gate terminal of the at least one IGBT.09-20-2012
20130162305SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE - To provide a semiconductor device with reduced power consumption that includes a selection transistor. To provide a semiconductor device capable of high-speed operation without increasing a power supply potential. A buffer circuit connected to a gate line has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential in response to a selection signal. Specifically, a bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side in the buffer circuit. Further, the bootstrap circuit boosts the potential when the gate line is selected, and does not boost the potential when the gate line is not selected.06-27-2013
20130162303PROPORTIONAL BIAS SWITCH DRIVER CIRCUIT WITH CURRENT TRANSFORMER - A switch bias system is provided that includes a bipolar junction transistor (BJT) switch comprising a base, emitter, and collector; an energy storage circuit coupled to the collector of the BJT, the energy storage circuit supplying current flow to the collector of the BJT; a current transformer circuit coupled to the emitter, the current transformer circuit configured to sense current flow through the emitter of the BJT switch; and a proportional bias circuit configured to generate a bias current to the base of the BJT switch, the bias current set to a proportion of the sensed current flow through the emitter of the BJT switch.06-27-2013
20130162304Gate Line Driver Capable Of Controlling Slew Rate Thereof - A gate line driver including an output buffer configured to receive a driving signal and output a driving voltage, and a slew rate controller including at least one capacitor and a switch connected in series to the at least one capacitor, the switch configured to selectively, electrically connect the at least one capacitor between an input terminal and an output terminal of the output buffer according to a slew rate control signal to control a slew rate of the output buffer.06-27-2013
20120112802DRIVING TRANSISTOR CONTROL CIRCUIT - A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.05-10-2012
20120112801Low-Current Input Buffer - A current-limited differential entry stage compares an input signal to a reference voltage generated by a current-limited transistor or diode configuration. Current limiters comprise a D-mode feedback transistor having a gate-source junction. The D-mode transistor is not conducting between the source and the drain if a gate-source voltage is more negative than a negative threshold voltage, and conducting between the source and the drain, otherwise a feedback connection connects the source of the D-mode feedback transistor to its gate via a component that generates a voltage drop.05-10-2012
20110169534MEMORY BANK SIGNAL COUPLING BUFFER AND METHOD - A memory array contains a plurality of banks coupled to each other by a plurality of data lines. Each of the data lines is divided into a plurality of segments within the array. Respective bidirectional buffers couple read data from one of the segments to another in a first direction, and to couple write data from one of the segments to another in a second direction that is opposite the first direction. The data lines may be local data read/write lines that couple different banks of memory cells to each other and to respective data terminals, digit lines that couple memory cells in a respective column to respective sense amplifiers, word lines that activate memory cells in a respective row, or some other signal line within the array. The memory array also includes precharge circuits for precharging the segments of respective data lines to a precharge voltage.07-14-2011
20130015889THRESHOLD VOLTAGE BASED POWER TRANSISTOR OPERATION - A system and method for operating a power transistor. Parasitic impedances naturally present in a circuit board or other interconnect structures exhibit a parasitic impedance effective to generate a parasitic voltage signal in response to operating the power transistor. The parasitic voltage signal is monitored in order to better control the power transistor. In particular, the threshold voltage of the power transistor can be determined and used to more optimally control the power transistor.01-17-2013
20110279151BUFFER AND DRIVING METHOD OF THE SAME - A buffer and a driving method thereof are provided. The buffer includes a first transistor for transmitting a first power source voltage to an output terminal according to an input voltage, a second transistor for transmitting an inverted voltage of the input voltage to the output terminal, a capacitor including a first terminal coupled to a gate of the second transistor and a second terminal configured to be input with a first level voltage or a second level voltage according to the input voltage, and a third transistor for transmitting a second power source voltage to the gate of the second transistor according to the input voltage.11-17-2011
20120286829SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT - A high breakdown voltage semiconductor device includes: an n11-15-2012
20120286828Apparatus and Method for Introducing a Controllable Delay to an Input Signal - An apparatus including a first electrode portion configured to inject charge carriers; a second electrode portion configured to collect charge carriers and provide an output signal; a third electrode portion configured to collect charge carriers and provide an output signal; a monolithic semiconductor, providing a first channel for the transport of injected charge carriers between the first electrode portion and the second electrode portion and providing a second channel for the transport of injected charge carriers between the first electrode portion and the third electrode portion, wherein the first channel is configured such that a charge carrier injected at the first electrode portion will reach the second electrode portion via the first channel after a first transport time and the second channel is configured such that a charge carrier injected at the first electrode portion will reach the third electrode portion via the second channel after a second transport time greater than the first transport time; and at least one gate electrode coupled to the monolithic semiconductor configured to enable switching a route for charge carrier transport between at least the first channel and the second channel.11-15-2012
20080290911MOSFET gate drive with reduced power loss - A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A feedback circuit may be used to assure that the magnitude of current in the power MOSFET in its low-current condition is correct. Alternatively, a trimming process may be used to correct the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition.11-27-2008
20120032713Semiconductor Device and Power Supply Unit Utilizing the Same - A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.02-09-2012
20120032708GATE DRIVER POWER AND CONTROL SIGNAL TRANSMISSION CIRCUITS AND METHODS - Methods, systems, and devices are described for both power and control signal transmission through a single coupled inductor. A current driver generates a cyclical current signal on a primary winding of a coupled inductor, to induce a voltage signal at the secondary winding corresponding to the cyclical current signal. A rectifier module is coupled with the secondary winding and configured to rectify the signal induced at the secondary winding. A control timing signal module is coupled with the primary winding and configured to induce voltage pulses on the secondary winding, the induced voltage pulses having an insubstantial impact on the output of the rectifier module. A switching module coupled with the secondary winding is configured to receive the voltage pulses and control a switching signal for a power switch coupled with the output of the rectifier and provide power to a load coupled with the output of the rectifier.02-09-2012
20110285426SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. In the control circuit, the comparison circuit compares an output of the conversion circuit and a reference value, and the logic circuit performs an arithmetic operation between an output of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls a current flowing through the inductor in accordance with an output of the logic circuit, and the output of the conversion circuit is generated in accordance with the current flowing through the inductor.11-24-2011
20110285427SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate.11-24-2011
20100213989GATE DRIVING CIRCUIT - To obtain a gate driving circuit in which rising of a constant current of a constant current circuit is fast and power saving is achieved, the gate driving circuit includes: a constant current driving circuit (08-26-2010
20120098577GATE DRIVER UNIT FOR ELECTRICAL SWITCHING DEVICE - An exemplary apparatus and method for using intelligent gate driver units with distributed intelligence to control antiparallel power modules or parallel-connected electrical switching devices like IGBTs is disclosed. The intelligent gate drive units use the intelligence to balance the currents of the switching devices, even in dynamic switching events. The intelligent gate driver units can use master-slave or daisy chain control structures and instantaneous or time integral differences of the currents of parallel-connected switching devices as control parameters. Instead of balancing the currents, temperature can also be balanced with the intelligent gate driver units.04-26-2012
20110133792BUFFER CIRCUIT - A buffer circuit in accordance with an embodiment comprises output transistors connected between a first fixed voltage terminal and an output terminal, and gate control transistors connected between a second fixed voltage terminal and a gate of one of the output transistors or between two of gates of the output transistors. The output transistors are configured to turn on to change a voltage of the output terminal. The gate control transistors are configured to apply a gate voltage to the gates of the output transistors. A gate of each of the gate control transistors is applied with a certain voltage, such that when a source of each of the gate control transistors changes from a first potential to a second potential, a potential difference between the gate and the source attains a threshold voltage or greater, whereby each of the gate control transistors is turned on.06-09-2011
20100264958OUTPUT CIRCUIT AND MULTI-OUTPUT CIRCUIT - An output circuit includes a high-side transistor, a low-side transistor, a gate protection circuit, a level shift circuit, and a pre-driver circuit. The level shift circuit interrupts a current path from an output terminal to the level shift circuit after a predetermined time has passed since the high-side transistor was switched OFF.10-21-2010
20130214823GATE DRIVING CIRCUIT - A gate driving circuit includes a gate control circuit and a gate voltage limit circuit. The gate control circuit establishes or breaks electrical continuity of a gate voltage supply path from a power source line to a gate terminal of a transistor in response to an on-command and an off-command. The gate voltage limit circuit limits a gate voltage of the transistor to be less than or equal to a first voltage in response to the on-command at least in a period until a determination of whether an electric current greater than a fault criterion value flows to the transistor ends and then limits the gate voltage to be less than or equal to a second voltage.08-22-2013
20130214822GATE DRIVE CIRCUIT - A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.08-22-2013
20110215840GATE DRIVE CIRCUIT - A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.09-08-2011
20110080192DRIVE CIRCUIT FOR SWITCHING DEVICE - The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme.04-07-2011
20090146698DRIVING CIRCUIT AND A PIXEL CIRCUIT INCORPORATING THE SAME - A driving circuit includes: a switch unit operable according to a scan signal, and adapted for permitting transfer of a data signal when operating in an on state; a capacitor having a first end that is coupled to the switch unit, and a second end; a first transistor having a first terminal that is adapted for coupling to a voltage source, a second terminal that is coupled to the second end of the capacitor and that is adapted to be coupled to a load, and a control terminal that is coupled to the first end of the capacitor; and a second transistor having a first terminal that is adapted for coupling to the voltage source, a second terminal coupled to the second terminal of the first transistor, and a control terminal that is adapted for receiving a bias voltage. Each of the first and second transistors operates in the linear region.06-11-2009
20090309634TRANSISTOR GATE DRIVING CIRCUIT WITH POWER SAVING OF POWER CONVERTER - A transistor gate driving circuit is developed for power saving. It includes a first high-side transistor, a second high-side transistor and a low-side transistor. A voltage clamp device is connected to the gate terminal of the first high-side transistor to limit the maximum output voltage. A detection circuit is coupled to detect a feedback signal of the power converter. The feedback signal is correlated to the output load of the power converter. The detection circuit will generate a disable signal in response to the level of the feedback signal. The disable signal is coupled to disable the second high-side transistor once the level of the feedback signal is lower than a threshold.12-17-2009
20110199131BUS DRIVER CIRCUIT - A bus driver circuit for driving a bus voltage is provided. The bus driver circuit comprises: a bus line output (CANL) the bus voltage of which is driven by the bus driver circuit; a first transistor (M08-18-2011
20100123485Switch Driving Circuit And Switch Driving Method - Disclosed is a switch driving circuit for controlling the switching operation of a switch. The switch driving circuit includes a driver generating a normal gate signal for controlling the switching operation of the switch, and a gate signal correction circuit comparing the normal gate signal with a gate signal applied to a gate electrode of the switch so as to correct the gate signal in accordance with the comparison.05-20-2010
20090278572Load-driving circuit having two transistors switched for heat dissipation - A load-driving circuit supplies electric current to a load, such as a resistor of an airbag squib. The load-driving circuit includes high side and low side current control circuits, both connected in series. Each current control circuit is composed of a driving transistor, a resistor and a current mirror circuit for controlling operation of the driving transistor. The components in the load-driving circuit are positioned in an integrated circuit chip to generate different temperature gradients among the components. For example, the low side resistor is positioned close to the high side driving transistor, so that the low side resistor is heated by the high side driving transistor controlled under a constant current control. As the low side resistor is heated, the high side driving transistor is switched from the constant current control to a full-on control. In this manner, controls of both driving transistors are automatically switched thereby to avoid overheating of one of the driving transistors.11-12-2009
20090284287Output buffer circuit and integrated circuit - Disclosed herein is an output buffer circuit including: a power supply; an output circuit having a first field-effect transistor and a second field-effect transistor; an output control circuit; a substrate-voltage control circuit; a gate-voltage control circuit; and a signal supplying section.11-19-2009
20090289670SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element.11-26-2009
20090289669CONTROLLING THE SLEW-RATE OF AN OUTPUT BUFFER - An output buffer provided according to an aspect of the present invention is designed to generate an output signal with a slew rate that is substantially independent of the threshold voltage of transistors contained within. An output buffer provided according to another aspect of the present invention provides output signals with different slew rates depending on the magnitude of the load capacitance at the output node of the output buffer.11-26-2009
20120119796PASS TRANSISTOR CAPACITANCE AND JITTER REDUCTION - A system comprises a pass switch circuit and a first pass switch activation circuit. The pass switch circuit includes an impedance circuit and a pass transistor having a first source/drain connection, a second source/drain connection, and a gate input. The pass switch circuit passes an electronic signal from the first source/drain connection to the second source/drain connection in response to activation of the gate input. An impedance transfer function of the pass switch circuit is determined at least in part by an impedance of the impedance circuit and the impedance is sized to minimize attenuation of the electronic signal due to the impedance transfer function of the pass switch circuit. The first pass switch activation circuit provides a first activation signal to the gate input in response to an enable signal.05-17-2012
20120293216MEMS CAPACITIVE SENSOR BIASING CIRCUIT INCLUDING AN INTEGRATED INDUCTOR - A MEMS capacitive sensor biasing circuit. The circuit includes a high-voltage (HV) NMOS switch, an inductor, a diode, and a capacitor. The HV NMOS switch has a source coupled to ground. The inductor has a first node coupled to a drain of the HV NMOS switch, and a second node coupled to a DC power source supplying a first DC voltage. The diode has an anode coupled to the first node of the inductor and the drain of the HV NMOS switch. The capacitor has a first node coupled to a cathode of the diode, and a second node coupled to the ground.11-22-2012
20120293218DRIVE CIRCUIT FOR VOLTAGE-CONTROL TYPE OF SEMICONDUCTOR SWITCHING DEVICE - A charging current is supplied to the gate (control terminal) of a driven switching device during an on-state command interval, for raising the gate voltage to an on-state value. Otherwise, discharging of the gate capacitance is enabled, for decreasing the gate voltage to an off-state value. A second switching device is connected between the gate and a circuit point held at the off-state voltage value, and is maintained in an on state while the gate discharging is enabled. At a first time point, the gate voltage rises above a threshold value. At a second time point, a voltage detection circuit detects that that the gate voltage has risen above the threshold value, causing the second switching device to be set in the off state. It is ensured that the delay between the first and second time points is shorter than a minimum duration of an on-state command interval.11-22-2012
20100102857Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.04-29-2010
20080284471Current load driving circuit - A current load driving circuit for driving a current load, including: a first current mirror circuit that outputs a current; and a second current mirror circuit that receives the current outputted from the first current mirror circuit as an input current and then amplifies the input current to drive the current load. The whole of the first current mirror circuit and the second current mirror circuit is divided into an input circuit and an output circuit; and the divided position is provided on a voltage route of the first current mirror circuit or a voltage route of the second current mirror circuit.11-20-2008
20090315595OUTPUT DRIVE CIRCUIT - An output drive circuit includes: a totem-pole output including: a high-side transistor (HST) with drain and source, an output stage power supply voltage applied to the drain, the source connected to the first node (N12-24-2009
20120293217FEEDFORWARD ACTIVE DECOUPLING - There are a variety of duty cycle systems, such as low noise amplifiers or LNAs, that have a large time varying current consumption, and parasitic inductances and resistance (usually from bondwires in the package) that can significantly affect supply currents. Thus, to compensate for these parasitics, a boost circuit is provided that allows for current to be supplied from a separate supply using a feedforward scheme to perform active decoupling.11-22-2012
20100264957OUTPUT CIRCUIT - An output circuit includes: an NMOS transistor of an output buffer, a transistor ON drive circuit configured to turn on the transistor; a switchable current source configured to turn off the transistor; and a drive control circuit configured to control the transistor ON drive circuit and the switchable current source. The electric charge at the gate terminal of the NMOS transistor of the output buffer is pulled out with the current of the switchable current source at a fixed current value even when the gate voltage of the transistor varies in a range of variations of the threshold voltage Vth of the transistor.10-21-2010
20110006814POWER STAGE - An power stage has a differential output stage 01-13-2011
20130214825DRIVE UNIT FOR DRIVING VOLTAGE-DRIVEN ELEMENT - A drive unit comprises a switching circuit and an abnormal signal generating circuit. The switching circuit is configured to be connected to an external time generating circuit, and is configured to switch a driving condition relating to a driving voltage of a voltage-driven element in a transitional period between a driving state and a non-driving state of the voltage-driven element based on a measurement time which is measured by using of the time generating circuit. The abnormal signal generating circuit is configured to generate an abnormal signal when an accurate measurement of the time using the time generating circuit is not executed.08-22-2013
20130120030SEMICONDUCTOR DEVICE MEASURING VOLTAGE APPLIED TO SEMICONDUCTOR SWITCH ELEMENT - A semiconductor device includes a semiconductor switch element including a first conduction electrode and a second conduction electrode, and a voltage measurement circuit for measuring voltage across the first conduction electrode and second conduction electrode of the semiconductor switch element. The voltage measurement circuit includes a diode element connected parallel to the semiconductor switch element to restrict the voltage applied in the conducting direction of the semiconductor switch element to a predetermined value, a control switch connected in series with the diode element, and a switch control unit setting the control switch at an OFF state when the semiconductor switch element is at an OFF state, and setting the control switch at an ON state when the semiconductor switch element is at an ON state.05-16-2013
20090160499Semiconductor output circuit - To improve a depletion transistor provided between a control terminal of an output transistor and an output terminal coupled to a load not to enter a conductive state when the output transistor is in the conductive state. The output transistor is served as a source follower. Control voltages which controlling the conductive state/nonconductive state of the depletion transistor are supplied to both a control terminal (gate) and a substrate terminal (back gate) of the depletion transistor.06-25-2009
20090160500POWER MANAGEMENT SYSTEMS WITH CHARGE PUMPS - A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor.06-25-2009
20090160498Semiconductor output circuit for controlling power supply to a load - Between a control terminal (gate) of an output transistor of a source follower configuration and an output terminal to which a load is coupled, a depletion transistor having a relatively lower breakdown voltage (that is, smaller device-area) is provided as a shutdown transistor of the output transistor, to thereby control a conductive state/nonconductive state of the depletion transistor. There are provided: the output transistor of the source follower configuration coupled between a first power supply line and the output terminal; the load coupled between the output terminal and a second power supply line; the depletion transistor coupled between the gate of the output transistor and the output terminal; and a control circuit controlling the conductive state/nonconductive state of the depletion transistor by applying, between a gate and a source thereof, a voltage smaller than a voltage deference between a potential of the first power supply line and a potential of the second power supply line.06-25-2009
20110204929DRIVE CIRCUIT OF POWER SEMICONDUCTOR DEVICE - In order to obtain a drive circuit of a power semiconductor device capable of making a fast response to a voltage fluctuation dV/dt and preventing a malfunction of the power semiconductor device while suppressing power consumption with a simple circuit configuration, a control circuit controlling ON and OFF switching of the power semiconductor device, a DC power supply supplying a voltage between control terminals of the power semiconductor device, and a switching element connected between the control terminals of the power semiconductor device are provided. The switching element turns ON in a case where a power supply voltage of the DC power supply drops or in a case where the voltage between the control terminals of the power supply device increases in a state where the power supply voltage of the DC power supply has dropped, and thereby causes a short-circuit between the control terminals of the power semiconductor device.08-25-2011
20120068739HIGHLY EFFICIENT CLASS-D AMPLIFIER - A simplistic low cost circuit that generates the necessary drive voltage for use in a source follower totem pole power switching circuit is described where the simplified gate drive circuit may have a dual charge pump and a complementary pair of low-power switching Mosfets.03-22-2012
20110221482Semiconductor device - Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.09-15-2011
20120229174OUTPUT STAGE CIRCUIT FOR OUTPUTTING A DRIVING CURRENT VARYING WITH A PROCESS - An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.09-13-2012
20110140744FLEXIBLE ELECTRONIC CIRCUITS AND DISPLAYS - A backplane for use in an electro-optic display comprises a patterned metal foil having a plurality of apertures extending therethrough, coated on at least side with an insulating polymeric material and having a plurality of thin film electronic devices provided on the insulating polymeric material.06-16-2011
20090096493Driving circuit, LED head and image forming apparatus - A driving circuit is supplied capable of preventing excessive overshoot from occurring when electric current of LED rises; preventing degradation of LED that is caused by peak electric current; and preventing the life of LED from shortening. In the driving circuit, a drive transistor supplies drive electric current to record elements to construct an array, and a reference electric current generating circuit that provides a control voltage to the drive transistor and controls the drive electric current, wherein the drive transistor is composed of a first PMOS transistor and a second PMOS transistor that are connected in series; and the reference electric current generating circuit has a resistance element and a operational amplifier that are used to set a reference electric current for deciding the control voltage, wherein an output of the operational amplifier is provided to a control terminal of the first PMOS transistor; and a drive electric current ON/OFF signal to control on/off of the drive electric current is provided to a control terminal of the second PMOS transistor.04-16-2009
20130214821HIGH VOLTAGE SEMICONDUCTOR ELEMENT AND OPERATING METHOD THEREOF - A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.08-22-2013
20090021287Circuit and method for driving organic light emitting diode - A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.01-22-2009
20110221481GATE DRIVE CIRCUIT - Provided is a gate drive circuit capable of turning off a MOS-FET reliably without adding a complicated structure. The gate drive circuit for driving a power MOS-FET includes: a first switching element connected to a gate terminal of the power MOS-FET through a first resistor, for setting a gate potential of the power MOS-FET to a potential for turning on the power MOS-FET, based on a signal from a signal source; and a second switching element connected to the gate terminal of the power MOS-FET through a second resistor, for setting the gate potential of the power MOS-FET to a potential for turning off the power MOS-FET, based on the signal from the signal source, in which the first resistor has a resistance value set to a value larger than a resistance value of the second resistor.09-15-2011
20090243667OUTPUT DRIVING DEVICE - An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.10-01-2009
20110204928DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND DRIVING METHOD THEREOF - An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.08-25-2011
20090315594Source/Emitter Follower Buffer Driving a Switching Load and Having Improved Linearity - A source follower or emitter follower buffer provided according to an aspect of the present invention includes a capacitor connected between the input path and a node formed by the junction of a pair of transistors forming a cascoded current source connected to the output of the buffer. The capacitor passes input signal current directly to a switching load connected to the output of the buffer, and very little signal-dependant current flows through the transistor receiving the input signal. As a result, input-output non-linearity due to signal-dependant modulation (variation) of transconductance of the transistor receiving the input signal is minimized. When incorporated in switched-capacitor analog to digital converters, the buffer facilitates generation of digital codes that represent an input signal more accurately.12-24-2009
20100176850DEVICE FOR CONVERTING AN ELECTRIC CURRENT - A device for converting an electric current or for forming an electric voltage, Includes semiconductor modules connected in series and having at least one controllable power semiconductor, a high-voltage control unit lying at the potential of one of the semiconductor modules and a low-voltage control unit lying close to a ground potential and connected to the high-voltage control unit by at least one fiber-optic cable. The device is to be safe, low-maintenance and cost-effective and therefore the high-voltage control unit has a high-voltage interface lying at the potential of one of the semiconductor modules and connected to at least two controllable power semiconductors by signal lines and the high-voltage interface is connected to the low-voltage control unit by at least one of the fiber-optic cables.07-15-2010
20120032714OUTPUT DRIVER DEVICE FOR INTEGRATED CIRCUIT - A driver device drives a load circuit by a common output signal from a first driver transistor and a second driver transistor. The driver device includes a first pre-driver unit that outputs a first driver control signal to the first driver transistor in response to the input signal; and a second pre-driver unit that outputs a second driver control signal to the second driver transistor in response to the input signal. The first pre-driver unit controls the first driver control signal in such a manner that the first driver control signal is rounded in the vicinity of a threshold of the first driver transistor and is sharply changed in a region exceeding the threshold.02-09-2012
20120032710SEMICONDUCTOR DEVICE DRIVING UNIT AND METHOD - A semiconductor device (02-09-2012
20130214824DRIVING CIRCUIT - A driving circuit that drives a semiconductor device includes first to sixth semiconductor devices. A first state and a second state are provided in one cycle in which a voltage is applied to a control terminal of the semiconductor device. In the first state, the first semiconductor device is closed, the third and fourth semiconductor devices are opened, and when the second semiconductor device is structured to have a semiconductor switch, the semiconductor switch is closed. In the second state, the first semiconductor device is opened, and the third and fourth semiconductor devices are closed.08-22-2013
20100013525Output driving device in semiconductor device - An output driving device prevents an inflow of external current through an output terminal even when there is no power supply. The output driving device includes an output circuit that maintains an output terminal at a low impedance state by receiving a supply of power in an output drive operation and maintains the output terminal at a high impedance state by receiving the supply of power in a non-output drive operation and a leakage prevention unit coupled to the output terminal of the output circuit, the leakage prevention unit preventing a current inflow to the output circuit through the output terminal when the supply of power is not supplied to the output circuit.01-21-2010
20090108884High Side Boosted Gate Drive Circuit - A high-side boosted gate drive circuit is disclosed. In a particular example, an output driver is described, comprising a switching device configured to selectively conduct current in response to a charge being present at a control terminal for a duty cycle, a charging device configured to deliver charge to the control terminal based on the first duty cycle, a charge control device configured to selectively couple the charging device to deliver charge to the control terminal and to selectively decouple the charging device from the control terminal to charge the charging device, and a discharge control device configured to remove charge from the control terminal.04-30-2009
20100237911Drive Circuit For A Power Switch Component - A drive circuit for a power switch component.09-23-2010
20100253395TRANSISTOR Gate Driver for Short Circuit Protection - Particular embodiments generally relate to driver structures. In one embodiment, an apparatus includes a first driver that drives a first current for a transistor. The first driver drives the first current during a first portion of a drive time of driving the transistor. The first driver is OFF during a second portion. A second driver drives a second current for the transistor during the second portion.10-07-2010
20100123486Driver for a Synchronous Rectifier and Power Converter Employing the Same - A driver for a switch, method of driving a switch, and a power converter employing the same. In one embodiment, the driver for the switch includes a first driver switch coupled to a terminal of the switch. The driver also includes a second driver switch inverted with respect to the first driver switch and coupled to another terminal of the switch, wherein the first and second driver switches are configured to provide a drive signal to a control terminal of the switch.05-20-2010
20100201406Temperature and Supply Independent CMOS Current Source - An improved current source may provide an improvement over a typical ΔV08-12-2010
20120194226SWITCHING ELEMENT CONTROL APPARATUS - A switching element control apparatus capable of controlling a switching element that is driven by controlling a voltage on its control terminal properly in response to characteristic information of the switching element. The apparatus includes a constant current circuit that applies a constant current to the control terminal, a voltage-limiting circuit that limits the voltage on the control terminal so as not to exceed a limiting voltage, and a control circuit that controls the constant current circuit to apply the constant current to the control terminal when having received a drive signal for turning on the switching element, and controls the voltage-limiting circuit to limit the voltage on the control terminal for a voltage-limiting time period. The control circuit includes a memory storing the characteristic information and variably sets at least one of the limiting voltage, the voltage-limiting time period, and the constant current in response to the characteristic information.08-02-2012
20120032712HIGH TEMPERATURE OPERATING PACKAGE AND CIRCUIT DESIGN - The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.02-09-2012
20120032709SEMICONDUCTOR DEVICE DRIVING UNIT AND METHOD - A turn-off feedback unit (02-09-2012
20100308873SWITCHING DEVICE DRIVING APPARATUS - An IGBT drive circuit is provided with a series regulator and a drive circuit. The series regulator includes a transistor and a control circuit. The control circuit and the drive circuit are integrated as an IC. The transistor is connected to the IC as an external component. Since the control circuit and the drive circuit are integrated, the number of components necessary for the IGBT drive circuit can be reduced. Further, the transistor is excluded from the IC so that radiant heat by the IC can be suppressed whereby an IC package having high heat-radiation characteristics is not necessarily used so that increasing size of the IC is avoided.12-09-2010
20110248751SLEW DETECTION FOR HIGH VOLTAGE ISOLATION REGION - A system includes control circuitry configured to provide one or more control pulses in response to a command signal, the one or more control pulses being communicated from the control circuitry to associated circuitry via a connection. A detector is configured to detect a disturbing signal that mitigates reception of the one or more control pulses via the connection. The command signal is controlled to cause the control circuitry to provide one or more additional control pulses when the disturbing signal is detected by the detector to improve a likelihood of the reception of the one or more control pulses via the connection.10-13-2011
20110018593MOSFET gate drive with reduced power loss - A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A trimming process is used to adjust the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition.01-27-2011
20090066373DEVICE FOR ADJUSTING CHIP OUTPUT CURRENT AND METHOD FOR THE SAME - A device for adjusting chip output current and a method for the same are provided. The device includes: a driving circuit for outputting a driving current according to a control signal, wherein the driving current flows to a reference resistor in another chip so as to generate an output voltage; and a detecting circuit coupled to the driving circuit and adapted for detecting the output voltage and a reference voltage, so as to generate the control signal; wherein the control signal controls the number of parallel connections of NMOS transistors or PMOS transistors in the driving circuit, so as to adjust the magnitude of the driving current.03-12-2009
20120032711SYSTEM AND METHOD FOR PRE-CHARGING A CURRENT MIRROR - A system for pre-charging a current mirror includes a controller configured to provide a first current and an additional current to a current mirror to rapidly charge a capacitance associated with the current mirror based on a reference voltage or control signals. A power amplifier module includes at least one current minor and a controller. A capacitor is coupled to the current minor. The controller provides a bias current in an amount proportional to an input to a voltage-to-current converter. The controller receives a control signal that directs the controller to apply one of a pre-charge voltage and a nominal voltage to the voltage-to-current converter.02-09-2012
20110109351SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.05-12-2011
20110241737POWER SUPPLY CIRCUIT FOR CPU - A power supply circuit is configured for supplying power to a central processing unit (CPU). The power supply circuit includes a pulse-width modulation (PWM) controller, a driving integrated circuit (IC), a first transistor, a second transistor, and a voltage regulator. The PWM controller is capable of outputting a PWM signal to regulate a voltage supplied to the CPU. The driving IC is connected to the PWM controller and capable of outputting a first driving signal and a second driving signal according to the PWM signal. The first transistor is connected to the driving IC and controlled by the first driving signal. The second transistor is connected to the driving IC and controlled by the second driving signal. The voltage regulator is capable of regulating a voltage of a power source to an optimized voltage and supplies the driving IC with the optimized voltage.10-06-2011
20120242375SWITCHING CIRCUIT DEVICE AND CONTROL CIRCUIT - A switching circuit device has a first transistor which has a drain coupled to a high-potential terminal, a source coupled to a low-potential power supply, and, a driving circuit, which outputs, to a gate of the first transistor in response to an input control signal, a pulse having a potential higher than a threshold voltage of the first transistor and a potential of the low-potential power supply, wherein the driving circuit has a first inverter including a second transistor provided between the gate and the source of the first transistor, wherein when the first transistor changes from on to off due to the pulse, the second transistor conducts and short-circuits the gate and the source of the first transistor.09-27-2012
20100141304DRIVE CIRCUIT FOR POWER ELEMENT - A driving circuit (06-10-2010
20100253396APPARATUS AND METHOD FOR CONTROLLING A COMMON-MODE VOLTAGE OF SWITCHING AMPLIFIERS - The present invention relates to an H-bridge controller and method for controlling a common-mode voltage and/or current of an H-bridge circuit. The H-bridge controller comprises a section for receiving a signal indicating at least one of a common-mode voltage and common-mode current of the H-bridge circuit, and a section for generating control signals which determine switching of the H-bridge circuit so as to control at least one of the common-mode voltage and common-mode current of the H-bridge circuit.10-07-2010
20110241738SWITCHING DEVICE DRIVING UNIT AND SEMICONDUCTOR APPARATUS - In order to provide a switching device driving unit that, even in a case where a threshold voltage of a switching device is varied, can suppress variations in switching speed, and prevent a power loss caused by an unnecessary gate current in a constant ON operation state of the switching device, so that a desired slew rate can be easily set, a control current source circuit sets to different values based on a first input driving signal, in a driving current to be source-outputted to a gate or a base of the switching device, a current in a stage of an initial ON operation of a switching operation of the switching device and a current in a stage after completion of the switching operation.10-06-2011
20090322382Semiconductor Device, Driving Method Thereof and Electronic Device - The invention provides a semiconductor device having a current input type pixel in which a signal write speed is increased and an effect of variations between adjacent transistors is reduced. When a set operation is performed (write a signal), a source-drain voltage of one of two transistors connected in series becomes quite low, thus the set operation is performed to the other transistor. In an output operation, the two transistors operate as a multi-gate transistor, therefore, a current value in the output operation can be small. In other words, a current in the set operation can be large. Therefore, an effect of intersection capacitance and wiring resistance which are parasitic on a wiring and the like do not affect much, thereby the set operation can be performed rapidly. As one transistor is used in the set operation and the output operation, an effect of variations between adjacent transistors is lessened.12-31-2009
20120229175Coupling Circuit, Driver Circuit and Method for Controlling a Coupling Circuit - A coupling circuit has a first and a second transistor (P09-13-2012
20110175649DRIVER CIRCUIT FOR HIGH VOLTAGE DIFFERENTIAL SIGNALING - Driver circuit for high voltage differential signaling. The circuit includes a first positive driver that generates a first positive transition at a first output in response to an input. The circuit also includes a first current element coupled to the first positive driver to enable generation of a current. Further, the circuit includes a first negative driver coupled to the first current element, and responsive to the input and the current, due to the first current element, to generate a first negative transition, at a second output, at a rate similar to that of the first positive transition.07-21-2011
20110068832DRIVING CIRCUIT FOR POWER MOSFET - A driving circuit for a power MOSFET includes a first switch, a second switch, a third switch and a fourth switch. The first switch is connected to a first node, a second node and a first power end. The first power end supplies a first voltage. The second switch is connected to the first node, the second node and a first ground end. The third switch is connected to the second node, a third node and the first power end. The fourth switch is connected to the second node, the third node and a second ground end. The power MOSFET is connected to the third node and a PWM signal is inputted into the first node. The PWM signal has a second voltage lower than the first voltage.03-24-2011
20110068833Dynamic Switch Driver for Low-Distortion Programmable-Gain Amplifier - A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged so as to selectively apply a pair of drive signals to change the ON/OFF state of the switch, the drive circuit being configured and arranged to generate the drive signals as a function of (a) a pair DC signal components sufficient to change the ON/OFF state of the switch and (b) a pair of time-varying signal components as at least a partial replica of the signal present on the source terminal of each MOSFET so that when applied with the DC signals to the gates of the n-channel MOSFET and p-channel MOSFET respectively, the drive signals will be at the appropriate level to maintain the ON/OFF state of the switch and keep the gate-source voltages of each MOSFET within the gate-source breakdown limit of the MOSFETs.03-24-2011
20100301905Output circuit having pre-emphasis function - An output circuit includes a first differential pair of transistors driven by a first current source and differentially receiving input signals and a second differential pair of transistors driven by a second current source and differentially receiving first control signals (EMT, EMB). Output pairs of the first and second differential pairs are connected to the differential output terminals. A load resistor element pair is connected between a power supply and the differential output terminals. The output circuit further includes a third differential pair of transistors driven by a third current source and differentially receiving second control signals and a fourth differential pair of transistors driven by a fourth current source and differentially receiving third control signals. An output pair of the third differential pair of transistors is connected between one of the differential output terminals and the power supply. An output pair of the fourth differential pair of transistors is connected between the power supply and the other of the differential output terminals.12-02-2010
20110148475DRIVING CIRCUIT OF INPUT/OUTPUT INTERFACE - A driving circuit of an input/output (I/O) interface is provided. The driving circuit includes a main output stage and an enhancing unit. The main output stage receives at least one driving signal and outputs an output signal corresponding to an input signal accordingly. The enhancing unit is coupled to the main output stage. The enhancing unit receives and detects the level of the output signal so as to drive the output force of the main output stage in a first output level or a second output level, wherein the first output level is higher than the second output level.06-23-2011
20110248750HIGH-BANDWIDTH ON-CHIP COMMUNICATION - Some embodiments of the present invention provide techniques and systems for high-bandwidth on-chip communication. During operation, the system receives an input voltage signal which is to be transmitted over a wire in a chip. The system then generates one or more modified voltage signals from the input voltage signal. Next, the system drives each of the voltage signals (i.e., the input voltage signal and the one or more modified voltage signals) through a respective capacitor. The system then combines the output signals from the capacitors to obtain a combined voltage signal. Next, the system transmits the combined voltage signal over the wire. The transmitted signals can then be received by a hysteresis receiver which is coupled to the wire through a coupling capacitor.10-13-2011
20110037503Buffer-driving circuit capable of increasing responding speed and prolonging lifespan, buffer, and method thereof - A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal.02-17-2011
20100097105SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack 04-22-2010
20120200319Method for operating a PWM output of a driver for a power semiconductor - A method for outputting an analog value at a PWM output of a driver for a power semiconductor. The method comprises converting the analog value to a PWM signal which has two signal levels and which is at a fixed PWM frequency. For an inactive state of a binary supplementary value the PWM signal is output at the PWM output. For an active value of the supplementary value the PWM signal is output together with a supplementary signal at the PWM output. The current signal level of the PWM signal and the respective other signal level are output alternately as a supplementary signal at a signal frequency greater than the PWM frequency.08-09-2012
20110210766DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.09-01-2011
20080204087METHOD AND CIRCUIT ARRANGEMENT CONFIGURED FOR DRIVING A FIELD-EFFECT-CONTROLLED TRANSISTOR - A method and circuit arrangement including driving a field effect controlled transistor. One embodiment provides a first load terminal, a second load terminal and a control terminal. The control terminal is driven, at least during a Miller plateau phase of the transistor, with a pulse-width-modulated control signal whose period duration is shorter than the duration of the Miller plateau phase.08-28-2008
20100321070SWITCHING ELEMENT DRIVING CIRCUIT AND CONVERTER - A driving circuit in which, during an on-period of a switching element, a voltage applied to the switching element is stored, and during an off-period of the switching element, the stored voltage is supplied to turn off the switching element.12-23-2010
20110133790DEVICE FOR DRIVING SWITCHING ELEMENTS - A drive unit controls the operation of a corresponding power switching element such as IGBT which forms an inverter and a converter. The drive unit controls the operation of the corresponding power switching element to supply an operation current to a motor generator. First and second switching elements in the drive unit are simultaneously turned on when an operation signal transferred from a control device is switched to a turning-on instruction operation signal. The voltage at the gate terminal of the power switching element is shifted to a divided voltage obtained by dividing a voltage of the power source by first and second resistances connected in series in the drive unit. When a mirror time period of the power switching element is elapsed, the second switching element only is turned off in order to shift the gate voltage of the power switching element to the voltage of the power source.06-09-2011
20110133791OUTPUT BUFFER CIRCUIT, INPUT BUFFER CIRCUIT, AND INPUT/OUTPUT BUFFER CIRCUIT - An output buffer circuit in accordance with an embodiment comprises a plurality of buffer circuits, each of the buffer circuits including a transistor operative to change an output signal of an output terminal in response to a change in an input signal, the output buffer circuit being configured to enable the plurality of buffer circuits to be driven selectively. Each of the plurality of buffer circuits includes a plurality of output transistors having respective current paths formed in parallel to one another between a fixed voltage terminal supplying a certain fixed voltage and an output terminal, and being selectively rendered in an operable state in accordance with a control signal provided from external. The plurality of output transistors included in each of the plurality of buffer circuits are formed having a certain size ratio.06-09-2011
20110187417RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.08-04-2011
20100213988DRIVING CIRCUIT OF SWITCH DEVICE - The present invention relates to a driving circuit of switch device. The present invention employs transformer isolated driving. The number of said transformers is two. The primary sides of the two transformers are connected to two driving modulators, respectively. The input terminal of a high frequency carrier signal and the input terminal of a driving signal are connected to the input terminal of a first driving modulator. The input terminal of a driving signal being connected with an inverter together with the input terminal of the high frequency carrier signal are connected to the input terminal of a second driving modulator. The first secondary side of the first transformer is connected to a power supply circuit which may provide a necessary voltage for turning on the switch device during a high level period of the driving signal. The first secondary side of a second transformer is connected to a voltage discharging circuit which may discharge a turn-on voltage of the switch device into a low level during a low level period of the driving signal. Therefore, the pair transistor amplification circuit in the existing transformer isolated driving becomes unnecessary, which provides a high driving power. In addition, employing no optical coupler isolated element makes the working life even longer.08-26-2010
20100213987SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD FOR THE SAME - A semiconductor device includes an element to be protected formed on a semiconductor substrate, a first protection transistor, and a second protection transistor. The first protection transistor is formed on a first well of a first conductivity type formed in an upper portion of a deep well of a second conductivity type. The second protection transistor is formed on a second well of the second conductivity type. A second source/drain diffusion layer is electrically connected with a third source/drain diffusion layer and at the same potential as the first well. A fourth source/drain diffusion layer is electrically connected with a second diffusion layer and at the same potential as the second well and the second diffusion layer.08-26-2010
20100213990HIGH FREQUENCY POWER SWITCHING CIRCUIT WITH ADJUSTABLE DRIVE CURRENT - A MOSFET pre-driver circuit with highly adjustable drive current for a high frequency switching power MOSFET circuit decreases the peak of the drive current and power loss of the pre-driver while maintaining power loss of the power stage so that total power loss is decreased and circuit efficiency is increased. A resistor arranged in series with a source of the MOSFET of the pre-driver circuit is provided to adjust the drive current.08-26-2010
20100079178IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.04-01-2010
20100060326CONTROL OF POWER SEMICONDUCTOR DEVICES - This invention relates to a control method and a circuit for MOS-gated power semiconductor switching devices such as IGBTs or MOSFETs, which allows control and optimisition of the current and voltage commutation of a power semiconductor switching device and freewheel diode pair in the basic half-bridge circuit found in a wide range of equipment. The method comprises the stages of: applying, upon receipt of a switch-on command signal, a voltage function to the control terminal or the gate of the power semiconductor switching device that allows a regulated current rise in the device whilst maintaining the voltage across the device falling at a predetermined rate; and at the instant when the voltage across the diode begins to change from the on-state towards the off-state level, applying a voltage function to the control terminal or the gate of the power semiconductor switching device to enable the voltage falling across the power semiconductor switching device to track the voltage falling across the diode in order to ensure a fast and controlled completion of the switching operation without diode reverse voltage overshoot. The gate drive automatically modifies the voltage function according to the working condition thereby accounting for the actual operating conditions.03-11-2010
20100194448Predriver and output driver circuit using the same - An output driver circuit includes a predriver control signal generation unit receiving a pull-up code signal, a pull-down code signal, a predriver selection signal and a read control signal and generating a pull-up control signal and a pull-down control signal; a predriver driven in response to the pull-up control signal and the pull-down control signal and receiving an internal data to drive a pull-up driving signal and a pull-down driving signal; and a driver receiving the pull-up driving signal and the pull-down driving signal and driving an output data outputted to a DQ pad, wherein the pull-up control signal and the pull-down control signal are enabled when the predriver is selected in a read operation period and a preset combination of the code signals is inputted.08-05-2010
20100194451METHOD OF CONTROLLING AN IGBT AND A GATE DRIVER - A method is disclosed for controlling an IGBT component and a gate driver. An exemplary method includes producing, with two separate driver circuits, a gate voltage for controlling the IGBT component, the outputs of the driver circuits being connected to free ends of a series connection of resistive components. A location, such as a midpoint between the series connection, forms the gate voltage.08-05-2010
20100194450THIN-FILM TRANSISTOR CIRCUIT, DRIVING METHOD THEREOF, AND LIGHT-EMITTING DISPLAY APPARATUS - In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT08-05-2010
20100194449Circuitry and Method for Reducing Second and Third-Order Nonlinearities - An electronic circuit (08-05-2010
20110148477SIGNAL TRANSMISSION DEVICE - A signal transmission device includes a transmitting circuit 06-23-2011
20110148476Overload Protection for a Circuit Arrangement Having a Transistor - A drive circuit for a transistor and a method for driving a transistor are described.06-23-2011
20100019808DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (01-28-2010
20110050292CORELESS PRINTED-CIRCUIT-BOARD (PCB) TRANSFORMERS AND OPERATING TECHNIQUES THEREFOR - Optimal operating techniques are disclosed for using coreless printed-circuit-board (PCB) transformers under (1) minimum input power conditions and (2) maximum energy efficiency conditions. The coreless PCB transformers should be operated at or near the ‘maximum impedance frequency’ (MIF) in order to reduce input power requirement. For maximum energy efficiency, the transformers should be at or near the “maximum efficiency frequency” (MEF) which is below the MIF. The operating principle has been confirmed by measurement and simulation. The proposed operating techniques can be applied to coreless PCB transformers in many circuits that have to meet stringent height requirements, for example to isolate the gates of power MOSFET and IGBT devices from the input power supply.03-03-2011
20110304363Input/Output Driver with Controlled Transistor Voltages - In an embodiment, an integrated circuit comprises core circuitry and at least one driver circuit. The core circuitry is powered by a first supply voltage during use, and comprises a control circuit configured to generate a pull up control signal, a pull down control signal, and at least one reference voltage. The driver circuit is powered by a second supply voltage during use, the second supply voltage having a greater magnitude than the first supply voltage. The driver circuit is connected to a pad to be connected to a pin on a package of the integrated circuit. The driver circuit comprises a cascode connection of a first transistor and a second transistor, and a capacitor coupled between a first gate terminal of the first transistor and a second gate terminal of the second transistor. The first gate terminal is coupled to receive the pull down control signal.12-15-2011
20110304362CURRENT-SOURCE CIRCUIT - A current-source circuit includes a plurality of input-side transistors; a plurality of output-side transistors current-mirror-coupled to the plurality of input-side transistors; an output terminal from which an output current is output; and a switching control circuit to switch the plurality of input-side transistors and activate at least one of the plurality of input-side transistors sequentially.12-15-2011
20120306545GATE DRIVER - A gate driver turns on/off a switching element Q12-06-2012
20120306546SEMICONDUCTOR DEVICE - A semiconductor device configured that its differential pair is made operable in both states of high speed with a high consumption current and low speed with a low consumption current. A differential circuit includes differential pair transistors and a tail current source for supplying a tail current that is switchable so that an amount of current flowing in the differential pair transistors may be switched between at least two sates of different levels. The differential pair transistors have a characteristic that, with a decrease of currents flowing in the differential pair transistors, a value of σ(ΔI/gm) decreases monotonously, where σ denotes a standard deviation, ΔI denotes a difference of the amounts of current of the differential pair transistors, and gm denotes transconductance of the differential pair transistors.12-06-2012
20100019807Current-source gate driver - Provided is a current-source gate driver for use with a switching device having a gate capacitance, including an input terminal for receiving a DC voltage; a first switch connected between the input terminal and an output terminal; a second switch connected between the output terminal and a circuit common; a series circuit comprising a first capacitor and an inductor, the series circuit connected between the input terminal and the output terminal; wherein the gate capacitance of the switching device is connected between the output terminal and the circuit common. The current-source gate driver improves efficiency of the power switching devices of a voltage regulator module or other switching converter.01-28-2010
20120038392DRIVING CIRCUIT OF INSULATED GATE DEVICE - A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device. The gate voltage controlling semiconductor device has a source and a gate, and is driven by a current charging the parasitic capacitor. The driving circuit also includes a pull-up device disposed between, and connecting, the source and the drain of the gate voltage controlling semiconductor device.02-16-2012
20120038391TRANSISTOR MODULE AND TRANSISTOR DRIVING MODULE - The present invention discloses a transistor driving module, coupling to a converting controller, to driving a high side transistor and a low side transistor connected in series, wherein one end of the high side transistor is coupled to an input voltage and one end of the low side transistor is grounded. The transistor driving module comprises a high side driving unit, a low side driving unit, a current limiting unit and an anti-short through unit. The high side driving unit generates a high side driving signal to turn the high side transistor on according to a duty cycle signal, and the low side driving unit generates a low side driving signal turn the low side transistor on according to the high side driving signal. The current limiting unit is coupled to the high side transistor and the high side driving unit, and generates a current limiting signal when a current flowing through the high side transistor higher than a current limiting value. The high side driving unit is stopped to generate the high side driving signal when receiving the current limiting value. The anti-short through unit is coupled to the high side driving unit and the low side driving unit to control the generations of the high side driving signal and the low side driving signal to have the timings of the high side driving signal and the low side driving signal non-overlapped.02-16-2012
20120206174DRIVING CIRCUIT FOR SWITCHING ELEMENT AND POWER CONVERTER - A short-circuit protection circuit (08-16-2012
20110156765DATA OUTPUT CIRCUIT PROVIDED WITH OUTPUT DRIVER - Provided is a data output circuit having an output driver that outputs accurate data voltages while preventing unwanted current leakage through switching CMOS transistors. The data output circuit includes a pre-driver, an output driver and a high resistance resistor. The pre-driver is configured to pre-drive a data pulse. The output driver is configured to receive the output signal of the pre-driver. The high resistance resistor is configured to adjust the output signal of the pre-drive so that a slope of the output signal is gradual r and to provide the smoothed output signal to the output driver. The high resistance resistor is a gate resistor of a MOS transistor of the output driver.06-30-2011
20120056648SEMICONDUCTOR DEVICE, ELECTRIC CIRCUIT USING THE SAME AND METHOD OF CONTROLLING ELECTRIC CIRCUIT - The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 03-08-2012
20120001663MIXED-MODE INPUT BUFFER - An input buffer with a reduced sensitivity to an externally generated reference voltage includes: a first input coupled between a first load and ground, the first input being an externally generated reference voltage; a second input coupled between a second load and ground, for generating an output; and a third input coupled in parallel to the first input, the third input being an internally generated reference voltage. The output switches between high and low or vice versa when the second input exceeds a switching point which is an average of the first input and the third input according to the relative size of the first input and the third input.01-05-2012
20120007636ANALOG SWITCH FOR SIGNAL SWINGING BETWEEN POSITIVE AND NEGATIVE VOLTAGES - An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state.01-12-2012
20120206170SEMICONDUCTOR SWITCHING DEVICE DRIVE CIRCUIT - Four energization switching devices and positive/negative switching devices are controlled to form a path charging a positive capacitor; a path connecting a power supply with the positive capacitor in series and energizing an inductor to charge a control terminal of a target switching device; a path charging the control terminal using electromagnetism in the inductor; a path supplying circulating current to the power supply when potential of the control terminal becomes higher than voltage of the power supply; a path charging a negative capacitor; a path connecting the power supply with the negative capacitor in series and energizing the inductor to discharge the control terminal; a path discharging the control terminal using electromagnetism in the inductor; and a path supplying circulating current to the power supply when potential of the control terminal becomes lower than potential of a negative terminal of the power supply.08-16-2012
20120206171SEMICONDUCTOR SWITCHING DEVICE DRIVE CIRCUIT - One of first and second switching devices turns on to flow a current along a current path between a potential reference output terminal of a drive-target switching device and a control terminal of the drive-target switching device to turn on the drive-target switching device. Thereby, a voltage changes between the control terminal of the drive-target switching device and the potential reference output terminal of the drive-target switching device to turn off the one of the first and second switching devices being turned on. Thereby, a potential of the control terminal of the drive-target switching device is clamped.08-16-2012
20120206169DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT - A drive circuit for a semiconductor switching element is disclosed. The drive circuit includes a power supply, a capacitor, a connection changeover unit for switching a connection form between the power supply and the capacitor, a resistor connected to a control terminal of the semiconductor switching element, first and second switching elements whose common connection point is connected to the resistor, a positive-side diode whose cathode is connected to the first switching element, a negative-side diode whose anode is connected to the second switching element, and a current conduction control circuit for controlling the connection changeover unit, and the first and second switching elements to form (i) a first path for charging the capacitor, (ii) a second path for charging the control terminal of the semiconductor switching element, and (iii) a third path for discharging the control terminal of the semiconductor switching element.08-16-2012
20120013369Synchronous Rectifier Gate Drive Timing To Compensate For Transformer Leakage Inductance - An apparatus for providing synchronous rectifier gate drive timing is described. The apparatus includes circuitry to receive a first signal. The apparatus also includes circuitry to generate a second signal by modifying the first signal to delay a transition from high to low for a non-zero overlap duration. An output to apply an inverse of the first signal as a gate drive timing of at least a first transistor and to apply the second signal as a gate drive timing of at least a second transistor, where the first transistor is a part of a primary side of a full-bridge synchronous rectifier and the second transistor is a part of a secondary side of the full-bridge synchronous rectifier is also included. The second signal and the inverse of the first signal are high during the overlap duration. Methods and program storage devices are also disclosed.01-19-2012
20120013370GATE DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - A gate driving circuit for driving a power semiconductor element can include a MSINK that is an n-channel metal-oxide silicon field-effect transistor (MOSFET) with a low resistance value for rapidly drawing out the charges accumulated on the gate of an insulated gate bipolar transistor (IGBT), and a MSOFT that is an n-channel MOSFET with a high resistance value for slowly drawing out the charges. By shifting the time for turning ON of these MOSFETs, soft interruption can be performed rapidly and surely when overcurrent or short circuit current flows in the IGBT. Therefore, device breakdown is minimized or avoided and noise generation is suppressed.01-19-2012
20120013371GATE DRIVING CIRCUIT - A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value I01-19-2012
20120056647SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.03-08-2012
20120056646SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.03-08-2012
20120112800Method of and Driver Circuit for Operating a Semiconductor Power Switch - To operate a semiconductor power switch having a control electrode and a reference electrode in response to first and second switching commands, a control voltage between a first electric pole and a second electric pole is provided. Upon each first switching command, the control electrode is coupled to the first electric pole, and the reference electrode is coupled to the second electric pole; and upon each second switching command, the control electrode is coupled to the second electric pole, and the reference electrode is coupled to the first electric pole. Upon each switching command, continuously transitioning an electric potential of the one of the control and reference electrodes during a first transition period, and continuously transitioning an electric potential of the respective other of the control and reference electrodes during a second transition period occurs, wherein the first transition period beginning before and ending after the second transition period.05-10-2012
20120206173Control of cross-over point - There is provided an output stage comprising: a phase splitter for receiving an input signal and for generating first and second drive signals of opposite phase in dependence thereon; a DC offset signal generator for generating a DC offset signal; an adder for adding the DC offset signal to the first drive signal to provide a first modified drive signal; a subtractor for subtracting the DC offset signal from the second drive signal to provide a second modified drive signal; a first drive transistor associated with a first power supply voltage, for generating a first output signal in dependence on the first modified drive signal; a second drive transistor associated with a second power supply voltage, for generating a second output signal in dependence on the second modified drive signal; and a combiner for combining the first and second output signals to generate a phase combined output signal.08-16-2012
20120206172INTERNAL POWER SUPPLY VOLTAGE GENERATION CIRCUIT - Provided is an internal power supply voltage generation circuit, with which a through current that flows during the operation of a logic circuit can be prevented from being excessive due to fluctuations in threshold voltage of a P-type transistor and an N-type transistor forming the logic circuit, and current consumption can be suppressed. Provided is an internal power supply voltage generation circuit for generating an internal power supply voltage at an internal power supply terminal and supplying the internal power supply voltage to a logic circuit, the internal power supply voltage generation circuit including a transistor having a source follower configuration for outputting a voltage applied to a gate thereof. A value of the internal power supply voltage is given based on the sum of an absolute value of a threshold voltage of an N-type transistor and an absolute value of a threshold voltage of a P-type transistor.08-16-2012
20120153996GATE DRIVING CIRCUIT ON ARRAY APPLIED TO CHARGE SHARING PIXEL - The disclosure provides a gate driving circuit on array applied to a display panel with charge sharing pixel structure. In particular, the gate driving circuit is adapted to receive multi-phase clock signal and includes a plurality of shift registers. Each shift register includes a driving circuit including a first driving transistor and a second driving transistor, a pull-down unit and at least one pull-up unit, so that is capable of generating mutually non-overlapped main gate driving signal and sub gate driving signal. Furthermore, the advantage of the disclosure is to provide a gate driving circuit with simplified circuit structure and circuit layout.06-21-2012
20120153997Circuit for Generating a Reference Voltage Under a Low Power Supply Voltage - A circuit for generating a reference voltage including: a first current source in series with a first bipolar transistor, between a first and a second terminal of application of a power supply voltage; a second current source in series with a second bipolar transistor and a first resistive element, between said first and second terminals, the junction point of the first resistive element and of the second bipolar transistor defining a third terminal for providing the reference voltage; a follower assembly having an input terminal connected between the first current source and the first bipolar transistor, and having an output terminal connected to a base of the second bipolar transistor; and a resistive dividing bridge between the output terminal of the follower assembly and said second terminal, the midpoint of this dividing bridge being connected to a base of the first bipolar transistor.06-21-2012
20120153995RESONANT TANK DRIVE CIRCUITS FOR CURRENT-CONTROLLED SEMICONDUCTOR DEVICES - A resonant tank circuit has an output port configured to be coupled to a load comprising a current-controlled semiconductor device, such as a diode, thyristor, transistor or the like. A voltage generator circuit is configured to intermittently apply voltages to an input port of the resonant tank circuit in successive intervals having a duration equal to or greater than a resonant period of the resonant tank circuit. Such an arrangement may be used, for example, to drive a static switch.06-21-2012
20120025873SEMICONDUCTOR DRIVE DEVICE - When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or a turn-off gate drive switching element. Furthermore, instead of detecting the temperature of the turn-on gate resistor or turn-off gate resistor, a thermistor is connected in series with the turn-on gate drive switching element or turn-off gate drive switching element, the resistance change corresponding to a change in temperature of the thermistor is detected, and the drive circuit is protected by turning off the turn-on gate drive switching element or turn-off gate drive switching element.02-02-2012
20120025874SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME - A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.02-02-2012
20120025876Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current.02-02-2012
20120025875APPARATUS FOR DRIVING VOLTAGE CONTROLLED SWITCHING ELEMENTS - An apparatus is provided to drive a voltage controlled switching element having a conduction control terminal. In the apparatus, it is determined whether or not voltage at the conduction control terminal is at a first voltage which is lower than a second voltage and which is equal to or more than a threshold voltage. The second voltage is a voltage provided when the switching element is in a normal on-state thereof. The threshold voltage is voltage at which the switching element is switched on. When it is determined that the voltage at the conduction control terminal is at the first voltage, the switching element is forcibly switched off.02-02-2012
20120062281Power Converter with Split Power Supply - A power converter driver that is supplied with two different voltages.03-15-2012
20120153998GATE DRIVE CIRCUIT - A gate drive circuit capable of turning on a semiconductor switching element at high speed, which includes: a buffer circuit including a turn-on-drive switching element and a turn-off-drive switching element that are complementarily turned on and off, for driving the semiconductor switching element; a first DC voltage supply including a positive electrode connected to the source or emitter of the turn-on-drive switching element and a negative electrode connected to a reference potential; and a second DC voltage supply including a positive electrode connected to the source or emitter of the turn-off-drive switching element and a negative electrode connected to the reference potential.06-21-2012
20130009673ADAPTIVE BODY BIAS CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME - An adaptive body bias (ABB) circuit and a semiconductor integrated circuit (IC) having the ABB circuit include: a logic circuit performing logic calculations, a clock line through which a clock signal is transmitted to the logic circuit, and at least one bias line through which a bias voltage is applied to the logic circuit, wherein the bias voltage is applied to a body of a metal oxide semiconductor (MOS) transistor constituting the logic circuit, and the bias line is arranged at a predetermined distance from the clock line to shield the clock signal from crosstalk due to other adjacent signal lines.01-10-2013
20120313670SYSTEM AND METHODS TO IMPROVE THE PERFORMANCE OF SEMICONDUCTOR BASED SAMPLING SYSTEM - Circuits and methods that improve the performance of electronic sampling systems are provided. Impedances associated with sampling semiconductor switches are maintained substantially constant during sample states, at least in part, by compensating for encountered input signal variations in order to reduce or minimize signal distortion associated with sampled signals that pass through the sampling switch.12-13-2012
20120212262Driver Circuit for a Semiconductor Power Switch - A driver circuit for controlling a semiconductor power switch comprises a first power driver transistor and a second power driver transistor complementary to the first power driver transistor. Both power driver transistors have an output terminal connected to an input terminal of the semiconductor power switch. An input terminal of the second power driver transistor is connected to a half bridge circuit comprising a first pre-driver transistor and a second pre-driver transistor complementary to the first pre-driver transistor. Both first and second pre-driver transistors have an output terminal connected to the input terminal of the second power driver transistor. This provides fast switching times with low power consumption for the pre-driver transistors.08-23-2012
20100289535INTEGRATED GATE DRIVER CIRCUIT - An integrated gate driver circuit includes an output drive circuit and a voltage stabilizing circuit. The voltage stabilizing circuit is configured to stabilize an output voltage outputted by the output drive circuit thereby reducing the ripple of the output voltage.11-18-2010
20100244909LOW-SPEED DRIVER CIRCUIT - A driver circuit includes an output transistor circuit that includes a first transistor of a first conductivity type and a second transistor of a second conductivity type disposed between a supply voltage source and a reference voltage source, and that outputs an output signal from a connection node between the first transistor and the second transistor, a first pre-buffer circuit that drives a gate of the first transistor in response to an input signal, and a second pre-buffer circuit that drives a gate of the second transistor in response to the input signal.09-30-2010
20100244908Semiconductor device having a complementary field effect transistor - A semiconductor device prevents the ON current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a buffer circuit that generates a power-supply voltage of a CMOS; a first replica transistor that is a replica of a p-channel MOS transistor forming the CMOS, and is diode-connected; a second replica transistor that is a replica of an n-channel MOS transistor forming the CMOS, and is diode-connected; and a voltage controller that controls the voltage between the anode and cathode of the replica transistors so that the current value of the current flowing into the replica transistor becomes equal to a given target value. In this semiconductor device, the buffer circuit generates the power-supply voltage, with the target voltage being a voltage that is controlled by the voltage controller.09-30-2010
20100244907LOW SPEED, LOAD INDEPENDENT, SLEW RATE CONTROLLED OUTPUT BUFFER WITH NO DC POWER CONSUMPTION - An output buffer utilizes capacitive feedback to control the output slew rate largely independent of load capacitance. The invention slows the rising and falling slew rates and via a capacitance feedback reduces the effect of load capacitance on slew rate, and uses no DC current. Transistor switches are employed to isolate and reduce noise and interaction among the circuit components and functions.09-30-2010
20120126861LOAD DRIVING CIRCUIT - A load driving circuit in which the off-time Toff and the fall time Tf can be improved in turn-off operation of the N-channel type MOSFET used as a high side switch. The load driving circuit uses an N-channel type power MOSFET as a high side switch connected between a power supply and a load, including a comparator circuit for comparing a gate voltage of the power MOSFET with a power-supply voltage; and a shut-off circuit for discharging the gate terminal of the power MOSFET in turn-off operation of the power MOSFET, the rate of discharging the gate terminal of the power MOSFET performed with the shut-off circuit being set such that the discharge rate provided if the gate voltage Vg is lower than the power-supply voltage Vp is slower than the rate of discharging the same provided if the gate voltage Vg is higher than the power-supply voltage Vp.05-24-2012
20120161822ELECTRICAL LOAD DRIVING APPARATUS - The electrical load driving apparatus includes means for alternately lowering the gate voltages of two current supply transistors connected in parallel to each other at regular time intervals, a current being supplied to an electrical load through drain-source paths of both the current supply transistors, and means for detecting wire breakage in two current supply wires in which the current supply transistors are interposed respectively at portions near the electrical load with respect to the current supply transistors based on the drain-source voltages of the current supply transistors.06-28-2012
20120126860GATE DRIVING CIRCUIT - A highly-reliable gate driving circuit achieved by suppressing the amount of hot-carriers generated in a MOSFET. In the gate driving circuit having NOEMI circuits, same-type NOEMI circuits are connected in series with a p-channel MOSFET constituting a gate charging circuit and an n-channel MOSFET constituting a gate discharging circuit, respectively, so as to suppress the amount of hot-carriers generated in the p-channel MOSFET and the n-channel MOSFET.05-24-2012
20120161820GATE DRIVE CIRCUIT, DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A gate drive circuit includes plural stages connected together one after each other. Each of the plural stages includes a circuit transistor, a capacitor part, a first connection part and a second connection part. The circuit transistor outputs the gate signal through a source electrode in response to a control signal applied through a gate electrode. The capacitor part includes a first electrode, a second electrode formed on the first electrode, and a third electrode formed on the second electrode. The first connection part electrically connects the gate electrode of the circuit transistor and the second electrode of the capacitor part. The second connection part electrically connects the source electrode of the circuit transistor and the first electrode of the capacitor part. Thus, an integrated size of a gate drive circuit may be decreased, and a reliability of a gate drive circuit may be enhanced.06-28-2012
20120161819HIGH VOLTAGE TRANSMISSION SWITCH, NAMELY FOR ULTRASOUND APPLICATIONS - A high voltage transmission switch comprises a switching block coupled between a connection terminal to a load and a low voltage output terminal and comprising at least a first switching transistor and a second switching transistor coupled between the connection terminal and the low voltage output terminal and interconnected at a first circuit node; and a driving circuit coupled between a positive low voltage supply reference and a negative high voltage supply reference and having an output terminal connected to the switching block. The driving circuit including at least a first driving transistor coupled between the positive low voltage supply reference and the output terminal and a second driving transistor coupled between the output terminal and the negative high voltage supply reference.06-28-2012
20110181324SELF-ADJUSTING GATE BIAS NETWORK FOR FIELD EFFECT TRANSISTORS - The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented.07-28-2011
20110181323METHOD FOR GENERATING A SIGNAL REPRESENTATIVE OF THE CURRENT DELIVERED TO A LOAD BY A POWER DEVICE AND RELATIVE POWER DEVICE - An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track.07-28-2011
20120133399SEMICONDUCTOR DEVICE HAVING SENSE AMPLIFIER - A semiconductor device includes a first driver circuit for supplying a first potential to a first power supply node of the sense amplifier, second and third driver circuits for supplying a second potential and a third potential to a second power supply node of the sense amplifier, and a timing control circuit for controlling operations of the first to third driver circuits. The timing control circuit includes a delay circuit for deciding an ON period of the third driver circuit. The delay circuit includes a first delay circuit having a delay amount that depends on an external power supply potential and a second delay circuit having a delay amount that does not depend on the external power supply potential, and the ON period of the third driver circuit is decided based on a sum of the delay amounts of the first and second delay circuits.05-31-2012
20120133398System and Method for Driving a Cascode Switch - In accordance with an embodiment, a method of driving switches includes sensing a control node of a first switch, sensing a control node of a second switch, and driving the control node of the first switch to a first active state after the control node of the second switch transitions to a second active state. The method also includes driving the control node of the second switch to a second inactive state after the control node of the first switch transitions to a first inactive state. Driving the control node of the first switch is based on sensing the control node of the second switch, and driving the control node of the second switch is based on based on sensing the control node of the first switch.05-31-2012
20110175650DRIVER CIRCUIT AND METHOD FOR REDUCING ELECTROMAGNETIC INTERFERENCE - An apparatus and a method switch a load through a power transistor. The apparatus includes: a first current generator for generating a current to charge a capacitance of a control terminal of the power transistor during power on of the power transistor; a second current generator for generating a current to discharge the capacitance during power off of the power transistor. The apparatus is equipped with control circuitry having a storage element for storing a voltage value representative of the potential difference between the control terminal and a conduction terminal of the power transistor when the power transistor operates in the saturation region and a discharge circuit for generating an additional current to discharge the capacitance during the power-off process. The additional current is a function of the potential difference of the control terminal and the stored voltage value from the conduction terminal.07-21-2011
20120235711LINE DRIVER - A line driver includes the following. A current replication unit replicates a reference current according to an input signal. A current mapping unit adjusts a number of P channel transistors connected in parallel and inside the current mapping unit according to control information, so as to amplify the reference current according to a magnification value. A first resistor is electrically connected between the current replication unit and a direct-current voltage. A second resistor is electrically connected to the current replication unit and the current mapping unit and generates an output signal. A signal detection unit performs integration on a part of a difference between the input signal and the output signal, thereby generating an integration signal. A magnification control unit gradually adjusts magnification information related to a reference signal, and updates the control information by the magnification information when the reference signal is equal to the integration signal.09-20-2012
20120169381OUTPUT SLEW RATE CONTROL - This document discusses, among other things, output slew rate control. Methods and structures are described to provide slew rate control of an output driver circuit such as a DRAM output driver on a die. A selectable combination of series coupled transistors are configured as a parallel array of complementary inverter pairs to provide a divided voltage to a calibrator. The calibrator is configured to respond to a differential voltage to adjust the divided voltage such that the differential voltage is forced to zero. The calibrator outputs a plurality of discrete signals from an up/down counter to toggle the individual transistors of the parallel array to increase and decrease a collective current. In some embodiments, transistor channel currents are modulated to step-adjust a voltage based on a ratio associated with a static resistance. In various embodiments, the divided voltage is an analog voltage based on a resistance associated with trim circuitry.07-05-2012
20120249190SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - To provide a semiconductor device including an A/D converter circuit that is capable of performing A/D conversion with high accuracy and high resolution and that can be reduced in size. One loop resistance wiring is shared by a plurality of power supply switches and a plurality of output circuits, and a reference voltage having a triangular (step-like) wave generated using the resistance wiring and the plurality of power supply switches is utilized. Thus, high-accuracy digital signals can be obtained using such an A/D converter circuit that can be reduced in size as an output circuit, without using a complicated circuit structure. Further, the number of constituent elements of the A/D converter circuit is small, whereby in the case of providing A/D converter circuits in parallel, variation between the A/D converter circuits can be made small.10-04-2012
20120249189SINGLE-PULSE RESONANT GATE DRIVER FOR DRIVING SWITCHES IN RESONANT ISOLATED CONVERTERS AND OTHER SYSTEMS - A gate driving circuit includes a driving stage configured to receive an input signal and generate a gate drive signal for a gate of a transistor switch. The gate driving circuit also includes an LC circuit having an inductor and a gate capacitance of the transistor switch. The LC circuit is configured so that a pulse in the gate drive signal generates a ringing in the LC circuit at a resonance frequency of the LC circuit to transfer energy into and out of the gate capacitance of the transistor switch. A switch could selectively couple the gate of the transistor switch to ground in order to discharge the gate capacitance. A control circuit could be used to provide the input signal, and the control circuit could be configured to regulate a duty cycle of the gate drive signal by adjusting an off-time between consecutive pulses in the input signal.10-04-2012
20120176164Circuit Arrangement Having a Load Transistor and a Voltage Limiting Circuit and Method for Driving a Load Transistor - The present invention relates to a circuit arrangement having the following features: 07-12-2012
20120074988ELECTRONIC DEVICE WITH DYNAMIC DRIVE STRENGTH ADJUSTMENT TO MITIGATE IMPACT OF SYSTEM NOISE ON WIRELESS PERFORMANCE - Electronic devices such as portable computers may contain circuits that generate radio-frequency noise. The radio-frequency noise may interfere with the operation of sensitive circuitry such as wireless communications circuitry. The circuits that generate the radio-frequency noise may include differential signal drivers that drive signals onto communications lines such as lines in a bus or output interface. A control circuit may power the drivers at an adjustable driver voltage bias level. The amount of noise that is generated by the drivers may vary as a function of the voltage bias level and may produce different amounts of noise at different wireless frequencies. Computer lid position and other factors may also influence the amount of interference that is generated. The control circuit may determine the current operating state of the device and may make voltage bias level adjustments that minimize interference between the drivers and the wireless circuitry.03-29-2012
20100039146High-Speed Multiplexer and Semiconductor Device Including the Same - High speed multiplexers include a first N-to-1 selection circuit, where N is an integer greater than one, a second N-to-1 selection circuit and an output driver. The first N-to-1 selection circuit is configured to route a true or complementary version of a selected first input signal (from amongst N input signals) to an output thereof in response to a first multi-bit selection signal, where N is an integer greater than one. The second N-to-1 selection circuit is configured to route a true or complementary version of the selected first input signal to an output thereof in response to a second multi-bit selection signal. The output driver includes a pull-up circuit, which is responsive to a signal generated at the output of the first N-to-1 selection circuit, and a pull-down circuit, which is responsive to a signal generated at the output of the second N-to-1 selection circuit.02-18-2010
20100271081GATE DRIVE CIRCUITRY FOR NON-ISOLATED GATE SEMICONDUCTOR DEVICES - One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch.10-28-2010
20120182051DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.07-19-2012
20120262206DATA LATCH CIRCUIT AND ELECTRONIC DEVICE - The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage.10-18-2012
20120299624VOLTAGE CONTROLLED SWITCHING ELEMENT GATE DRIVE CIRCUIT - A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.11-29-2012
20120229176Integrated Semiconductor Device - A III-nitride device that includes a silicon body having formed therein an integrated circuit and a III-nitride device formed over a surface of the silicon body.09-13-2012
20120229173Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage - Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation.09-13-2012
20100327919DIFFERENTIAL AMPLIFIER CIRCUIT - A differential amplifier main circuit amplifies, while first voltage is applied to drains of first and second transistors via a load circuit and second voltage is applied to source of third transistor, a difference between voltages applied to gates of the first and second transistors, and outputs it from a connection between the load circuit and drains of the first or second transistor. A voltage application circuit applies voltage to the gate of the third transistor so that a current between the source and drain thereof to have a predetermined magnitude. Gates of transistors of the application circuit are connected to a second common-connection of drains thereof to which the first voltage is applied via a load, the second voltage is applied to a first common-connection of sources of the transistors, and a connection of the second common-connection and the load is connected to the gate of the third transistor.12-30-2010
20120319742SYSTEMS AND METHODS FOR DRIVING A BIPOLAR JUNCTION TRANSISTOR BY ADJUSTING BASE CURRENT WITH TIME - System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period.12-20-2012
20120319741REDUCED CROSSTALK WIRING DELAY EFFECTS THROUGH THE USE OF A CHECKERBOARD PATTERN OF INVERTING AND NONINVERTING REPEATERS - A buffer arrangement in wire lines in which at least one aggressor wire line is located adjacent and substantially parallel to a victim wire line has a plurality of alternately arranged inverting and noninverting buffers. The alternately arranged in a checkerboard pattern in which noninverting and inverting buffers are located in the victim wire line in locations corresponding to locations of the inverting and noninverting buffers in the at least one aggressor wire line.12-20-2012
20120319740Method and Circuit for Driving an Electronic Switch - Disclosed is an electronic circuit. The electronic circuit includes a transistor having a control terminal to receive a drive signal, and a load path between a first and a second load terminal. A voltage protection circuit is coupled to the transistor, has a control input, is configured to assume one of an activated state and a deactivated state as an operation state dependent on a control signal received at the control input, and is configured to limit a voltage between the load terminals or between one of the load terminals and the control terminal. A control circuit is coupled to the control input of the voltage protection circuit and is configured to deactivate the voltage protection circuit dependent on at least one operation parameter of the transistor and when a voltage across the load path or a load current through the load path is other than zero.12-20-2012
20120326756ELECTRONIC CIRCUIT AND METHOD FOR TESTING AND KEEPING A MOS TRANSISTOR SWITCHED-OFF - The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal. A resistor has a first terminal connected to the gate terminal and has a second terminal connected to an auxiliary pad. When the electronic circuit is operating in a test phase and is configured for receiving a test signal for performing the test of the transistor, the auxiliary pad is electrically floating. When the electronic circuit is operating in a normal phase and is configured for receiving a supply voltage, the auxiliary pad is electrically connected to a voltage value smaller than the sum of the voltage value of the source terminal with the threshold voltage value of the transistor.12-27-2012
20120326755BIAS CIRCUIT - A bias circuit for an operating transistor has a first resistor disposed in a path for supplying a bias current to a base of the operating transistor, a first transistor for applying the bias current flowing to the first resistor, a second transistor for applying a corresponding current corresponding to the bias current supplied via at least one current mirror circuit, a third transistor having bases connected in common with the first transistor for applying the corresponding current, a second resistor for applying the corresponding current and obtaining a voltage drop corresponding to a voltage drop at the first resistor, and a fourth transistor receiving a reference voltage at an emitter side and having a base connected to an emitter side of the third transistor.12-27-2012
20120326757CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A DRIVE SIGNAL FOR A TRANSISTOR - Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. The control circuit transmits, depending on the switching signal for each switching operation of the transistor, switching information and switching parameter information via the transmission channel to the driver circuit. The driver circuit generates the drive signal depending on the switching information and depending on the switching parameter information.12-27-2012
20100225364Stacked semiconductor devices and signal distribution methods thereof - A stacked semiconductor device includes a plurality of stacked chips, each having a plurality of elements to receive a signal. At least one first ladder main signal line for receiving the signal is arranged to pass through the chips. At least one second ladder main signal line is arranged to pass through the chips. A plurality of ladder buffers buffer the signal applied from the first ladder main signal line to the second ladder main signal line. The signal is uniformly distributed to the stacked chips using a ladder type circuit network technique.09-09-2010
20100225363Integrated Circuit for Driving Semiconductor Device and Power Converter - An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 09-09-2010
20100231270SWITCHING OUTPUT CIRCUIT - A high-side transistor and a low-side transistor each has gate electrodes configured so as to allow signals to be input and output via a driving contact and a detection contact provided at different positions. When a control signal is at a first level and a signal output from the detection contact on the low-side transistor side is at a low level, the high-side driver applies a low-level signal to the driving contact on the high-side transistor side. When the control signal is at a second level and a signal output from the detection contact on the high-side transistor side is at a high level, the low-side driver applies a high-level signal to the driving contact on the low-side transistor side.09-16-2010
20100231269DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT - A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.09-16-2010
20120086479Controlling Power Chain with Same Controller in Either of Two Different Applications - A controller for controlling a power chain in an electronic device can be used in either of two different applications. The first application requires the controller to produce drive signals for driving discrete power MOSFETs within the power chain. The second application requires the controller to produce an output PWM signal to control an integrated circuit having power MOSFETs integrated with MOSFET drivers within the power chain. The controller generally includes a sensor that detects which of the two applications the controller is in. The controller also generally includes outputs that produce, when the controller is in the first application, the drive signals for driving the discrete power MOSFETs. But when the controller is in the second application, one of the outputs is used to produce the output PWM signal for controlling the integrated circuit.04-12-2012
20120280725DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.11-08-2012
20120092043High Voltage Output Driver - An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions.04-19-2012
20120139589GATE DRIVER AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME - A gate driver for driving a gate of a switching element Tr06-07-2012
20130009672ENERGY-RECYCLING RESONANT DRIVE CIRCUITS FOR SEMICONDUCTOR DEVICES - A transistor driver includes an inductor coupled to a gate terminal of a transistor and a switching circuit coupled to the inductor and configured to charge a capacitance at a gate terminal of the transistor from a source via the inductor responsive to a first state of a control input, to block discharge of the charged capacitance responsive to a voltage at the gate terminal and to return charge from the charged capacitance to the source responsive to transition of the control input to a second state. The switching circuit may include a switch coupled in series with the inductor and the source and configured to conduct responsive to transition of the control input to the first state and a rectifier coupled in series with the inductor and the source and configured to block discharge of the charged capacitance responsive to the voltage at the gate terminal.01-10-2013
20130009675GATE DRIVER - A gate driver of a switching element Q01-10-2013
20130009676BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME - A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.01-10-2013
20130009674HIGH TEMPERATURE HALF BRIDGE GATE DRIVER - A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto celcius (200 degrees celcius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout.01-10-2013
20130015888SEMICONDUCTOR DEVICE, START-UP CIRCUIT, OPERATING METHOD FOR THE SAMEAANM Chan; Wing-ChorAACI Hsinchu CityAACO TWAAGP Chan; Wing-Chor Hsinchu City TWAANM Hu; Chih-MinAACI Kaohsiung CityAACO TWAAGP Hu; Chih-Min Kaohsiung City TWAANM Chen; Li-FanAACI Hsinchu CityAACO TWAAGP Chen; Li-Fan Hsinchu City TW - A semiconductor device, a start-up circuit, and an operating method for the same are provided. The start-up circuit comprises a semiconductor unit, a first circuit, a second circuit, a voltage input terminal and a voltage output terminal. The first circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The second circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The semiconductor unit is coupled to a first node between the first circuit and the second circuit. The voltage input terminal is coupled to the semiconductor unit. The voltage output terminal is coupled to a second node between the semiconductor unit and the first circuit.01-17-2013
20130015887DRIVE CIRCUIT WITH ADJUSTABLE DEAD TIMEAANM Piselli; MarcoAACI PaduaAACO ITAAGP Piselli; Marco Padua ITAANM Massaro; SimoneAACI VeneziaAACO ITAAGP Massaro; Simone Venezia ITAANM Lenz; MichaelAACI ZornedingAACO DEAAGP Lenz; Michael Zorneding DEAANM Puerschel; MarcoAACI MunichAACO DEAAGP Puerschel; Marco Munich DEAANM Graovac; DusanAACI MunichAACO DEAAGP Graovac; Dusan Munich DE - A drive circuit includes a first input terminal configured to receive a first input signal, a first output terminal configured to provide a first drive signal, a second output terminal configured to provide a second drive signal, and a mode selection terminal configured to have a mode selection element connected thereto. The drive circuit is configured to generate the first and second drive signals dependent on the first input signal such that there is a dead time between a time when one of the first and second drive signals assumes an off-level and a time when the other one of the first and second drive signals assumes an on-level, and evaluate at least one electrical parameter of the mode selection element and is configured to adjust a first signal range of the first drive signal and a second signal range of the second drive signal dependent on the evaluated parameter and to adjust the dead time dependent on the evaluated parameter.01-17-2013
20130015886High Voltage, High temperature Semiconductor Driver for Switching Power semiconductor devicesAANM Johnson; Brant TureAACI ConcordAAST MAAACO USAAGP Johnson; Brant Ture Concord MA US - The application discloses a novel way to provide an integrated circuit driver interface between a control device and semiconductor power devices that benefit from the drivers unique ability to provide positive and negative voltages that improve the switching characteristics of the power devices. This invention's unique construction allows it to operate at high voltages and high temperature to the benefit of multiple power conversion applications.01-17-2013
20130021067METHOD FOR DRIVING IGBT - Provided is a method for driving an IGBT, wherein a transient voltage applied across the IGBT is reduced by reducing a slope of a gate-emitter voltage of IGBT.01-24-2013
20120242376LOAD DRIVE APPARATUS AND SEMICONDUCTOR SWITCHING DEVICE DRIVE APPARATUS - A load drive apparatus includes a switching device, a gate drive circuit, a clamp circuit, a temperature detection circuit, and an arithmetic device. The switching device controls an on-off state of current supply to a load. The gate drive circuit turns on the switching device by controlling a gate voltage of the switching device so that the switching device operates in a full-on state. The clamp circuit clamps the gate voltage of the switching device to a clamp voltage lower than the gate voltage in the full-on state and higher than a mirror voltage. The temperature detection circuit detects a temperature of the switching device. The arithmetic device calculates a voltage corresponding to a variation in a mirror voltage based on the detected temperature and controls the clamp voltage in the clamp circuit so as to be the calculated voltage.09-27-2012
20130169320GATE DRIVER WITH DIGITAL GROUND - Various exemplary embodiments relate to gate driver circuitry that compensate for parasitic inductances. Input buffers in the gate driver are grounded to an exposed die pad. Grounding may involve either a downbond or conductive glue.07-04-2013
20130169321INTEGRATED CIRCUIT (IC), ADAPTIVE POWER SUPPLY USING IC CHARACTERISTICS AND ADAPTIVE POWER SUPPLY METHOD ACCORDING TO IC CHARACTERISTICS, ELECTRONIC DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD OF IC - Embodiments disclose an integrated circuit (IC) including a power input unit, which receives power from an external power supply, a core, which is driven by the power input through the power input unit, and a controller, which determines characteristics of the core and controls the external power supply to supply the power according to the determined characteristics.07-04-2013
20130169322EFFICIENT REDUCTION OF ELECTROMAGNETIC EMISSION IN LIN DRIVER - A Local Interconnect Network (LIN) driver circuit employs a charging/discharging current applied to the gate of a driver transistor coupled to an LIN bus. The charging current includes a constant charging current and an additional soft charging current, whereas the discharging current includes a constant discharging current and an additional soft discharging current. As a result of the soft charge/discharge components, there is a significant reduction in electromagnetic emission on the LIN bus.07-04-2013
20080224738HIGH-SIDE SWITCH WITH A ZERO-CROSSING DETECTOR - A circuit arrangement comprising a high-side semiconductor switch with a first load terminal connected to a first supply terminal receiving an input voltage, a second load terminal connected to an output terminal providing an output signal, and a control terminal, a floating driver circuit connected to the control terminal for driving the semiconductor switch, a level shifter receiving an input signal and providing a floating input signal dependent on the input signal, a floating control logic receiving the output signal and the floating input signal and providing at least one control signal to the floating driver circuit, wherein the floating control logic comprises means for detecting an edge in the output signal and means for generating the control signal dependent on the result of the edge detection.09-18-2008
20110260758HALF-POWER BUFFER AMPLIFIER - A half-power buffer amplifier is disclosed. A buffer stage includes a first-half buffer stage and a second-half buffer stage, wherein an output of the first-half buffer stage is controllably fed back to a rail-to-rail differential amplifier, and an output of the second-half buffer stage is controllably fed back to the rail-to-rail differential amplifier. The switch network controls the connection between the outputs of the buffer stage and an output node of the half-power buffer amplifier in a manner such that a same pixel, with respect to different frames, of a display panel is driven by the same rail-to-rail differential amplifier. In one embodiment, the rail-to-rail differential amplifier and the buffer stage comprise half-power transistors operated within and powered by half of a full range spanning from power to ground.10-27-2011
20110273206SWITCHING GATE DRIVER - Disclosed is a switching gate driver of an IGBT device, including a resistor unit to control a gate current of the IGBT device; and a voltage reader that outputs a control signal to control a variable resistor unit of the resistor unit to the resistor unit, according to a collector-emitter voltage of the IGBT device.11-10-2011
20110273208JUNCTION GATE DRIVER WITH TAPPED INDUCTOR CURRENT SOURCE - A junction device driver is provided that includes a current regulator, an inductor coupled with the current regulator, and a switching module coupled with the inductor. The current regulator is configured to generate a current, and the inductor is configured to store energy generated by the current produced by the current regulator. The switching module is configured to control a conduction current for a gate of a junction device. The conduction current is generated, initially, from the stored energy of the inductor to thereby provide a relatively high initial current. As the energy stored in the inductor is discharged, the current level drops to a lower level that is sufficient to maintain the junction device in an “on” state.11-10-2011
20110273207JUNCTION GATE DRIVER - A junction device driver is provided that includes a current regulator, an inductor coupled with the current regulator, and a switching module coupled with the inductor. The current regulator is configured to generate a current, and the inductor is configured to store energy generated by the current produced by the current regulator. The switching module is configured to control a conduction current for a gate of a junction device. The conduction current is generated, initially, from the stored energy of the inductor to thereby provide a relatively high initial current. As the energy stored in the inductor is discharged, the current level drops to a lower level that is sufficient to maintain the junction device in an “on” state.11-10-2011
20130120029HIGH-SPEED PRE-DRIVER AND VOLTAGE LEVEL CONVERTER WITH BUILT-IN DE-EMPHASIS FOR HDMI TRANSMIT APPLICATIONS - In an example, a high-speed pre-driver and voltage level converter with built-in de-emphasis for HDMI transmit applications is provided. An exemplary integrated circuit includes a serializer, a pre-driver coupled to receive a differential input from the serializer, and a driver. The pre-driver includes all-p-type metal-oxide-silicon (PMOS) cross-coupled level converter comprising four PMOS transistors and two de-emphasis PMOS transistors forming a de-emphasis tap coupled to the output of the cross-coupled level converter. The driver is coupled to the pre-driver output and is configured to receive a differential input from the pre-driver.05-16-2013
20130093474SYSTEMS AND METHODS FOR DRIVING TRANSISTORS WITH HIGH THRESHOLD VOLTAGES - System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor.04-18-2013
20130113526CONTROL SIGNAL GENERATION CIRCUIT, CHARGE PUMP DRIVE CIRCUIT, CLOCK DRIVER, AND DRIVE METHOD OF CHARGE PUMP - A control signal generation circuit which generates a control signal for controlling a gate of an MOS transistor, comprises a first switching part connected to a current source and the gate and controlled based on an input signal; and a second switching part connected to the current source and the gate and controlled based on an input signal and control signal, wherein a voltage value of the control signal changes based on the input signal, and a slant of the voltage value with respect to time is switched to become smaller after the voltage value exceeds a threshold voltage of the MOS transistor compared with when the voltage value equals to or less than the threshold voltage of the MOS transistor.05-09-2013
20130113525SEMICONDUCTOR DEVICE AND OPERATION MODE SWITCH METHOD - A semiconductor device includes a first internal terminal, a first transistor, a second transistor, an oscillator including an output terminal to output a clock signal, and a comparator coupled to a first internal terminal, and that compares a potential of the first internal terminal when the first internal terminal is coupled to the first reference potential with a potential of the first internal terminal when the first internal terminal is coupled to a second reference potential, an external terminal being connectable to the first internal terminal, and a second internal terminal being coupled to the external terminal, and that receives an input signal through the external terminal. Each of the first control terminal and the second control terminal is coupled to the output terminal to commonly receive the clock signal. The first transistor and the second transistor exclusively operate according to the clock signal.05-09-2013
20130127500POWER SEMICONDUCTOR DEVICE DRIVING CIRCUIT - A power semiconductor device driving circuit includes a gate control terminal, which is provided at a position separated from a drain terminal of a power semiconductor device by a predetermined distance so that electric discharge is generated between the drain terminal and the gate control terminal at the time of generation of surge. A surge voltage is applied to the gate control terminal due to this discharge, the gate of the power semiconductor device is charged to turn on and absorb the surge energy. Thus it becomes possible to suppress the surge voltage applied to the drain terminal and prevent breakdown of the power semiconductor device.05-23-2013
20110210765RECONFIGURABLE SEMICONDUCTOR DEVICE - A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.09-01-2011
20080197893VARIABLE OFF-CHIP DRIVE - A driver circuit includes a set of selectable drivers each having an individual drive capability, the drivers being selectable such that i) when a subset of the drivers is selected, a signal will be driven by the drivers at a first drive level, and ii) when the subset of the drivers and at least one additional driver is selected, signal will be driven by the drivers at a level that is greater than the first level by a level of drive provided by the least one additional driver.08-21-2008
20110221480DRIVE CIRCUIT - A resonant gate drive circuits for a voltage controlled transistor according to the embodiments are characterized by connecting a resonant inductor and a resistor to a gate of the voltage controlled transistor or a gate of the normally-on voltage controlled transistor or a voltage control terminal of a pseudo normally-off element, in series, and providing the drive circuit with two complementary switching elements connected in series.09-15-2011
20130147525DRIVE CIRCUIT FOR INSULATED GATE SWITCHING ELEMENT - Embodiments of the invention provide a drive circuit including: a constant current source that generates a constant current; a switching circuit that connects a gate of the insulated gate switching element to a power supply potential side via the constant current source when turning the insulated gate switching element ON and connects the gate of the insulated gate switching element to a reference potential side via a discharge circuit when turning the insulated gate switching element OFF; a gate voltage detection circuit that detects a gate voltage of the insulated gate switching element; and a current mode selection circuit that switches a mode of the constant current source from a normal current mode to a low current consumption mode when detecting, based on the gate voltage detected by the gate voltage detection circuit, that the insulated gate switching element is turned ON.06-13-2013
20100283515GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS - A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.11-11-2010
20100283514POWER SUPPLY DEVICE AND METHOD FOR DRIVING THE SAME - In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.11-11-2010
20120256661Current Mode Line Driver - The present invention discloses a line driver for a communication system with a variable loading. The line driver includes a positive output terminal, a negative output terminal, a plurality of current cells, for generating a plurality of output currents, and a plurality of switches, for controlling a number of connections between the plurality of current cells and the positive output terminal and the negative output terminal according to impedance of the variable loading, to generate a total output current such that a output voltage swing stays within a specific range.10-11-2012
20110234263DRIVER AND OUTPUT BUFFER CIRCUIT - A driver circuit transmits a signal generated by a signal level generation circuit to a circuit to be measured by transmitting the signal to a output buffer circuit via a circuit (prebuffer circuit) that drives the output buffer circuit and causing the output buffer circuit to drive a transmission line. The driver circuit includes the prebuffer circuit and a replica buffer circuit formed by imitating the prebuffer circuit. The prebuffer circuit and the replica buffer circuit are disposed in parallel. The driver circuit temporarily increases input bias current to be supplied to output-stage transistors of the output buffer circuit on the basis of output current of the replica buffer circuit during transition of an input or output signal.09-29-2011
20130181749DRIVE CIRCUIT FOR SWITCHING ELEMENT - The drive circuit is for turning on and off a switching element having an open/close control terminal, an input terminal and an output terminal by moving electrical charge in the open/close control terminal in accordance with an on-manipulation command and an off-manipulation command received from outside. The drive circuit includes an active gate control means for changing a moving speed of the electrical charge midway between when movement of the electrical charge is started and when the movement is completed, and a determination means for making at least one of a determination on a change timing to change the moving speed and a determination on whether or not a change of the moving speed by the active gate control means should be made.07-18-2013
20130181748METHOD AND APPARATUS FOR DRIVING A VOLTAGE CONTROLLED POWER SWITCH DEVICE - A driving circuit for at least one voltage controlled power switch device comprises a driver signal generating circuit and a trigger signal generating circuit adapted to generate trigger signals for said voltage controlled power switch device (PT). The trigger signal generating circuit includes a first driving transistor, and at least one energy buffer component coupled between the trigger signal generating circuit and the control electrode of said power switch device (PT).07-18-2013
20130181750ACTIVE GATE DRIVE CIRCUIT - Exemplary embodiments are directed to a gate drive circuit and a method for controlling a gate-controlled component. The gate drive circuit includes a PI controller that receives an input reference signal (v07-18-2013
20130187683LINEARIZING FIELD EFFECT TRANSISTORS IN THE OHMIC REGION - Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus can include a field effect transistor (FET), averaging resistors and a bidirectional current source. The averaging resistors can apply an average of a voltage at the source of the FET and a voltage at the drain of the FET to the gate of the field effect transistor. The bidirectional current source can turn the FET on and off. The FET can operate in the ohmic region when on. Such an apparatus can improve the linearity of the FET as a resistor, for example, at lower frequencies near or at direct current (DC). In some implementations, the apparatus can include one or more current sources to remove an offset introduced by the bidirectional current source at the source and/or the drain of the FET.07-25-2013
20130187684FAST GATE DRIVER FOR SILICON CARBIDE JUNCTION FIELD-EFFECT (JFET) SWITCHING DEVICES - Devices and techniques are described for selectively driving an electronically controllable switching device between on and off states. A first signal driver provides a respective output selectively switchable between “on” and “off” states responsive to an input signal. A second signal driver likewise provides a respective output selectively switchable between “on” and “off” states responsive to the input signal. Each of the respective outputs is switchable to an overriding isolated state responsive to an enable signal. The outputs are combined at a driving node, such that only one of the outputs drives the node at any given time. Additionally, one of the outputs is coupled to the output node through a current limiting resistor. Accordingly for each switching cycle, the switching device can be pre-charged by a high-current output, then held on for a predetermined period by a controlled-current output, and held off during other periods.07-25-2013
20120019287GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.01-26-2012
20130194006DEAD TIME GENERATION CIRCUIT AND LOAD DRIVING APPARATUS - A dead time generation circuit includes a high-side control signal generation circuit and a low-side control signal generation circuit which are separate circuits. The high-side control signal generation circuit inverts a level of a high-side control signal from a driving prohibition level to a driving permission level when a time corresponding to a first clock number has elapsed in a state where a control signal keeps a first level after the control signal transitions from a second level to the first level. The low-side control signal generation circuit inverts a level of a low-side control signal from the driving prohibition level to the driving permission level when a time corresponding to a second clock number has elapsed in a state where the control signal keeps the second level after the control signal transitions from the first level to the second level.08-01-2013
20120293219BOOTSTRAP GATE DRIVER - A bootstrap gate driver including a load indication unit, a bootstrap gate-drive unit and a drive-control unit is provided. The load indication unit is configured to generate a load indication signal in response to a state of a load. The bootstrap gate-drive unit is configured to drive a switch-transistor circuit in response to an inputted pulse-width-modulation (PWM) signal, wherein the switch-transistor circuit has a high-side driving path and a low-side driving path. The drive-control unit is coupled to the load indication unit and the bootstrap gate-drive unit, and configured to enable or disable the high-side driving path in response to the load indication signal. In the invention, the operation of the low-side driving path is not affected by enabling or disabling the high-side driving path.11-22-2012
20130200927Over-Temperature Protected Transistor - A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true.08-08-2013
20130200929POWER MODULE AND OUTPUT CIRCUIT - A power module (08-08-2013
20130200928External Power Transistor Control - The present document relates to the control of an external power transistor. In particular, the present document relates to a method and system for avoiding ringing at the external power transistor subsequent to switching of the external power transistor. A driver circuit to generate a drive signal for switching a driven switch between an off-state and an on-state is described. The driver circuit comprises a drive signal generation unit configured to generate a high drive signal triggering the driven switch to switch to the on-state; wherein an output resistance of the driver circuit is adjustable; an oscillation detection unit to detect a degree of oscillation on the drive signal; and a resistance control unit to adjust the output resistance of the driver circuit based on the degree of oscillation on the drive signal.08-08-2013
20130099832Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current.04-25-2013
20130099831GATE DRIVE CIRCUIT AND ASSOCIATED METHOD - A method of driving a number of series connected active power semiconductor groups, wherein each of the active power semiconductor groups includes one or more gate oxide-isolated active power semiconductor devices. The method includes generating a current pulse, providing the current pulse to a primary portion of a transformer unit and in response thereto causing a number of reflected current pulses to be reflected at a secondary portion of the transformer unit, and transferring and latching each of the reflected current pulses to create a respective latched gate drive signal, and providing each respective latched gate drive signal to an associated one of the active power semiconductor groups for driving the one or more gate oxide-isolated active power semiconductor devices of the associated one of the active power semiconductor groups. Also, a gate drive circuit that implements the method.04-25-2013
20120299625GATE DRIVING CIRCUIT - A gate driving circuit includes a control power; a transformer having a primary winding and a secondary winding; a first switching element; a second switching element; a rectifying element; and a capacitance element, wherein the first switching element is connected between the control power and one end of the primary winding, and the second switching element is connected to the other end of the primary winding, wherein one end of the capacitance element is connected to either one of the one end and the other end of the primary winding, and wherein, when one of the first switching element and the second switching element is turned on, the capacitance element is charged by the control power, and when the other of the first switching element and the second switching element is turned on, the capacitance element is discharged.11-29-2012
20130207695POWER SUPPLY CIRCUITS WITH DISCHARGE CAPABILITY AND METHODS OF OPERATING SAME - A power supply circuit includes a sequence control circuit configured to generate at least one control signal in response to a main power source, a voltage regulator circuit configured to be coupled to the main power source and to selectively generate at least one power supply voltage for a chipset from the main power source in response to the at least one control signal and a discharge circuit configured to discharge the voltage regulator circuit responsive to the at least one control signal.08-15-2013

Patent applications in class Having semiconductive load