Class / Patent application number | Description | Number of patent applications / Date published |
315111310 | With extraction electrode | 12 |
20110068691 | METHOD FOR PRODUCING A PLASMA BEAM AND PLASMA SOURCE - A method for generating a plasma beam and a plasma source for carrying out the method, where the plasma beam is extracted from a plasma generated by electric and magnetic fields by means of a radiofrequency voltage being applied to an extraction electrode and an RF electrode device having an excitation electrode having an excitation area, where a plasma space is arranged between extraction electrode and excitation area and the plasma, relative to the extraction electrode, on average over time, is at a higher potential which accelerates positive plasma ions, and | 03-24-2011 |
20130015765 | Methods and Structures for Rapid Switching Between Different Process Gases in an Inductively-Coupled Plasma (ICP) Ion SourceAANM Graupera; AnthonyAACI HillsboroAAST ORAACO USAAGP Graupera; Anthony Hillsboro OR USAANM Kellogg; SeanAACI PortlandAAST ORAACO USAAGP Kellogg; Sean Portland OR USAANM Utlaut; Mark W.AACI ScappooseAAST ORAACO USAAGP Utlaut; Mark W. Scappoose OR USAANM Parker; N. WilliamAACI HillsboroAAST ORAACO USAAGP Parker; N. William Hillsboro OR US - An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source. | 01-17-2013 |
20130300288 | METHOD AND DEVICE FOR FORMING A PLASMA BEAM - The invention relates to a method and device for forming a plasma beam. According to the invention: the quality of the electroneutrality of the plasma beam (PB) is detected (in | 11-14-2013 |
20130307413 | Circular Hollow Anode Ion Electron Plasma Source - The Circular Hollow Anode Ion Electron Plasma Source is a hollow anode ion electron plasma source presenting the limited area of the inner surface only of an anode exit aperture, leading to high brightness and high efficiency in a simple robust plasma device. | 11-21-2013 |
20140077699 | RF SYSTEM, MAGNETIC FILTER, AND HIGH VOLTAGE ISOLATION FOR AN INDUCTIVELY COUPLED PLASMA ION SOURCE - In a plasma ion source having an induction coil adjacent to a reactor chamber for inductively coupling power into the plasma from a radio frequency power source and designed for negative and positive ion extraction, a method for operating the source according to the invention comprises providing radio frequency power to the induction coil with a RF amplifier operating with a variable frequency connected to a matching network mainly comprised of fixed value capacitors. In this device the impedance between the RF power source and the plasma ion source is matched by tuning the RF frequency rather than adjusting the capacitance of the matching network. An option to use a RF power source utilizing lateral diffused metal oxide semiconductor field effect transistor based amplifiers is disclosed. | 03-20-2014 |
20140217893 | PLASMA SOURCE - A plasma source comprising an RF coupling system, magnets or coils that generate magnetic fields, a gas injection system, and a vacuum tight RF transparent gas containment tube, wherein said RF coupling system comprises an RF coupler and said plasma source further comprises a choke point wherein the ratio of the field strength at said choke point to the field strength at said RF coupler is greater than two. | 08-07-2014 |
20140265853 | SYSTEM AND METHOD FOR PLASMA CONTROL USING BOUNDARY ELECTRODE - An ion source may include a chamber configured to house a plasma comprising ions to be directed to a substrate and an extraction power supply configured to apply an extraction terminal voltage to the plasma chamber with respect to a voltage of a substrate positioned downstream of the chamber. The system may further include a boundary electrode voltage supply configured to generate a boundary electrode voltage different than the extraction terminal voltage, and a boundary electrode disposed within the chamber and electrically coupled to the boundary electrode voltage supply, the boundary electrode configured to alter plasma potential of the plasma when the boundary electrode voltage is received. | 09-18-2014 |
20140265854 | Ion Source - An ion source is provided that includes at least one electron gun. The electron gun includes an electron source for generating a beam of electrons and an inlet for receiving a gas. The electron gun also includes a plasma region defined by at least an anode and a ground element, where the plasma region can form a plasma from the gas received via the inlet. The plasma can be sustained by at least a portion of the beam of electrons. The electron gun further includes an outlet for delivering at least one of (i) ions generated by the plasma or (ii) at least a portion of the beam of electrons generated by the electron source. | 09-18-2014 |
20140265855 | ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED SUPPRESSION ELECTRODE FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution. | 09-18-2014 |
20140306607 | Methods and Structures for Rapid Switching Between Different Process Gases in an Inductively-Coupled Plasma (ICP) Ion Source - An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source. | 10-16-2014 |
20160093463 | FOCUSED ION BEAM SYSTEMS AND METHODS OF OPERATION - A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece. | 03-31-2016 |
20160205759 | PLASMA SOURCE WITH AN RF COUPLING SYSTEM AND METHOD OF OPERATING THEREOF | 07-14-2016 |