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Interdigitated electrodes

Subclass of:

310 - Electrical generator or motor structure

310300000 - NON-DYNAMOELECTRIC

310311000 - Piezoelectric elements and devices

310313000 - Surface acoustic wave devices

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
310313000 Envelope or apodized 32
310313000 Grating or reflector in wave path 14
Entries
DocumentTitleDate
20130033150HIGH TEMPERATURE-RESISTANT, ELECTRICALLY CONDUCTIVE THIN FILMS - Electrically conductive thin film metallizations having continuous operating temperatures of 300° C. and more are of considerable practical interest for a number of technical applications, such as surface wave elements. Technical reasons and high production costs are a bar to the use of standard films. In order to remedy this, films including a mixture of a high-melting conductive metal and aluminum oxides, wherein in particular aluminum-rich non-stoichiometric aluminum oxides are used. The aluminum oxides act as components thermally stabilizing the conductive metal film; an optional proportion of chemically available aluminum can additionally alloy with the conductive metal and thereby enables essential film properties, such as the electrical conductivity to be specifically influenced. It is thus possible, using standard materials and methods of thin film deposition, in a cost-effective manner to produce highly electrically conductive, thermally resistant films having good structurability and comparatively low density for a wide range of different applications.02-07-2013
20100045138PIEZOELECTRIC THIN-FILM ACOUSTIC WAVE DEVICE AND INFORMATION PROCESSING UNIT USING THE SAME - A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×1002-25-2010
20100096946SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a surface acoustic wave (SAW) chip, a base that is made of resin and surround the SAW chip, and a cap that is made of resin and is bonded, by a seal member, to the base so as to define a cavity in which the SAW chip is sealed with the cap and the base, the cavity communicating with an outside of the surface acoustic wave device through a through hole formed in the seal member.04-22-2010
20120181899Piezoelectric resonator and elastic wave device - The generation of secondary vibration different in oscillation frequency from primary vibration is suppressed. In a quartz-crystal resonator in which excitation electrodes are formed respectively on both surfaces of a quartz-crystal piece whose primary vibration is thickness shear vibration, a hole portion is formed at a portion, in the excitation electrode, where secondary vibration is generated, and a concave portion is formed in a region, in the quartz-crystal piece, corresponding to the hole portion. Alternatively, a convex portion are preferably provided symmetrically with respect to a center of the quartz-crystal resonator. Consequently, the secondary vibration attenuates and the oscillation frequency of the secondary vibration shifts to a high frequency side.07-19-2012
20100327694SURFACE ACOUSTIC WAVE DEVICE - A highly reliable surface acoustic wave device includes wiring lines that do not easily rupture at a three-dimensional wiring portion. The surface acoustic wave device includes a plurality of surface acoustic wave elements located on a piezoelectric substrate, a supporting member arranged on the piezoelectric substrate so as to enclose vibrating portions including electrodes such as IDT electrodes, and a cover member stacked so as to cover openings of the supporting member and to define hollow spaces facing vibrating electrodes. Furthermore, a three-dimensional wiring portion at which a first wiring line and a second wiring line are stacked with an insulating layer interposed therebetween is provided on the piezoelectric substrate. The three-dimensional wiring portion is enclosed by the supporting member, and thereby disposed inside a space enclosed by the piezoelectric substrate, the supporting member, and the cover member.12-30-2010
20130069481SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a piezoelectric substrate including a groove located in a surface thereof, an IDT electrode, and a dielectric film. The IDT electrode includes a first electrode layer located in the groove and a second electrode layer located outside the groove. The dielectric film is arranged on the piezoelectric substrate so as to cover the IDT electrode. The second electrode layer is tapered toward a side opposite to the piezoelectric substrate.03-21-2013
20090302709BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device is capable of reducing insertion loss and the absolute value of the temperature coefficient of frequency (TCF). The boundary acoustic wave device utilizes a boundary acoustic wave propagating along the interface between a piezoelectric substance and a dielectric substance. The piezoelectric substance has a negative temperature coefficient of frequency and the dielectric substance has a positive temperature coefficient of frequency. IDT electrodes include a first conductive layer arranged on a side of the piezoelectric substance, a third conductive layer arranged on a side of the dielectric substance, and a second conductive layer arranged between the first and third conductive layers and composed of a metal having a lower density than those of the first and third conductive layers or an alloy primarily containing the metal. If thicknesses of the first, second, and third conductive layers are H12-10-2009
20130062995ELECTRONIC COMPONENT - An electronic component includes: a substrate; a functional element located on the substrate; a wiring located on the substrate and electrically connected to the functional element; a metal ceiling located above the functional element so that a space is formed between the metal ceiling and the functional element; and a sealing portion located on the metal ceiling, wherein the metal ceiling is electrically connected to a signal wiring that is included in the wiring and transmits a high-frequency signal.03-14-2013
20090236935BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes an IDT electrode between a piezoelectric layer and a dielectric layer. A low thermal expansion medium layer made of a material having a linear thermal expansion coefficient less than that of the piezoelectric layer is laminated on a surface of the piezoelectric layer opposite to the boundary. Acoustic velocities of transversal waves in a boundary acoustic wave propagation direction at the piezoelectric layer, the dielectric layer, and the low thermal expansion medium layer satisfy Expression (1), and when λ represents a wavelength of the IDT electrode, (an acoustic velocity of a transverse wave at the dielectric layer)/λ satisfies Expression (2) as follows:09-24-2009
20090009029ULTRASONIC MOTOR - An ultrasonic motor comprises an ultrasonic vibrator having a piezoelectric stack, a press member which is securely connected in the vicinity of a node of a standing wave in the ultrasonic vibrator and which presses the ultrasonic vibrator, a driven member which is driven by frictional force between the driven member and the ultrasonic vibrator, and a case to which the press member is fixed. Here, the press member has holes, and the case has guide pins which engage with the holes provided in the press member. Further, the press member is fixed to the case in a state bent in a press direction.01-08-2009
20090102317GLASS BASED PACKAGING AND ATTACHMENT OF SAW TORQUE SENSOR - A glass cover wafer is bonded to a quartz SAW using glass frit technology, such that the glass wafer and glass frit formulation provides a thermal coefficient of expansion (TCE) of glass that fits the average TCE of the quartz in two perpendicular directions in a unique package. A dicing technology is used for chip separation. The sensor back side and the shaft are attached with a glass glue that transitions the TCE from the shaft to the quartz without interposing a large amount of the glue.04-23-2009
20090102318BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device using SH boundary acoustic waves includes a first medium layer, a second medium layer stacked on the first medium layer, and an electrode including an interdigital electrode and reflectors. A sound absorbing layer is provided on the surface of the first medium layer and/or the second medium layer opposite the interface therebetween.04-23-2009
20100033055METHOD FOR MANUFACTURING ELASTIC WAVE DEVICE - A method for manufacturing an elastic wave device includes: forming comb-shaped electrodes for exciting elastic waves on a piezoelectric substrate; forming a dielectric layer having a thickness greater than that of the comb-shaped electrode so as to cover the comb-shaped electrodes, forming an etch back layer so as to cover the dielectric layer, and etching an etch back layer and part of the dielectric layer under the conditions where the etch back layer and the dielectric layer are thinned at the same rate.02-11-2010
20090001850SAW SENSOR WITH ADJUSTABLE PRELOAD - A SAW based sensor having a base and a lid engageable with the base to form an internal cavity therewith. A substrate is supported in the cavity on either tile base or the lid 13 and a dimple 16 is formed on the other which extends towards the substrate so as to engage against the substrate and apply a preload thereto. The base and lid include complementary threads by means of which they are attachable to each other. The preload applied to the substrate by the dimple 16 is adjustable by varying the rotational position of the lid relative to the base.01-01-2009
20090309453ELECTRO ACOUSTIC SENSOR FOR HIGH PRESSURE ENVIRONMENTS - A composite acoustic wave device (AWD) which is adapted for operation at high ambient pressures is provided. The AWD comprises two piezoelectric plates in back to back relationship, with electrodes disposed between the plates. The plates are bonded so as to neutralize the effects of external pressure. Further disclosed is a sensor utilizing the AWD and methods for utilizing such AWD for physical measurements in high pressure environments. An optional cavity formed between the piezoelectric plates offers the capability to measure the pressure and to further neutralize the residual effects of the pressure on measurement accuracy.12-17-2009
20130099628ELECTRONIC COMPONENT AND FABRICATION METHOD OF THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME - An electronic component includes: an element that is located on a substrate; a signal wiring that is located on the substrate and electrically connected to the element; a metal plate that is located so as to form a cavity on a functional part of the element and covers an upper surface of the cavity; a support post that is located on the substrate so as not to be located on the signal wiring, and supports the metal plate; and an insulating portion that covers the metal plate and the support post, and contacts a side surface of the cavity.04-25-2013
20090267448DEVICE FOR MIXING FLUIDS - A device for mixing fluids includes a substrate, a first and a second surface acoustic wave-generating members, and fluid-receiving members. The first and second surface acoustic wave-generating members are positioned on the substrate at opposite ends. The fluid-receiving members are positioned on the substrate and between the first and second surface acoustic wave-generating members. Each fluid-receiving member includes a fixed end and a free end opposite to the fixed end. The fixed end is positioned on the substrate. A groove is defined in the free end and configured to receive the fluids.10-29-2009
20090267449ELASTIC WAVE DEVICE AND FILTER AND ELECTRONIC EQUIPMENT USING THE DEVICE - The elastic wave device of the present invention has an piezoelectric substrate; a first dielectric layer disposed on the piezoelectric substrate; a second dielectric layer disposed on the first dielectric layer; and an acoustical layer on the second dielectric layer. Determining each film thickness of the first and the second dielectric layers provides advantageous effects. That is, energy of an SH wave as a main wave is confined in the boundary between the piezoelectric substrate and the first dielectric layer, and at the same time, an SV wave is suppressed as an unwanted wave. The device allows the SV wave—whose displacement distribution is similar to that of Stoneley wave—to have displacement distribution on the upper surface of the second dielectric layer and to be suppressed by the acoustical layer disposed on the second dielectric layer.10-29-2009
20100102670METHOD AND SYSTEM FOR PACKAGING AND MOUNTING SURFACE ACOUSTIC WAVE SENSOR ELEMENTS TO A FLEX PLATE - A method and system for packaging and mounting a SAW sensor to an automobile flex plate for use in sensing torque. A SAW sense die can be adhesively bonded to a metal disc comprising semicircular holes formed at the periphery of the metal disc. An insulator (e.g., plastic) constituting lead pins can be adhesively bonded to the metal disc that surrounds the sense die in a particular orientation. A cap (e.g., plastic) can then be bonded over the insulator. The metal disc, along with the SAW sense die, can be aligned to the flex plate by matching the semicircular holes on the metal disc with a semicircular hole configured at the edge of a circular cutout on the flex plate. The aligned metal disc and the flex plate can be bonded together by, for example, laser welding.04-29-2010
20110204747Temperature Compensated Surface Acoustic Wave Device and Method Having Buried Interdigital Transducers for Providing an Improved Insertion Loss and Quality Factor - A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.08-25-2011
20080303379SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a LiNbO12-11-2008
20080284281Electronic apparatus - The electronic apparatus comprises a display portion and a quartz crystal oscillator at least, and said electronic apparatus comprises at least one quartz crystal oscillator. Also, the at least one oscillator comprises a quartz crystal oscillating circuit comprising an amplification circuit and a feedback circuit. The feedback circuit is constructed by a flexural mode, quartz crystal tuning fork resonator or a length-extensional mode quartz crystal resonator and for example, the quartz crystal tuning fork resonator comprising tuning fork tines and tuning fork base that are formed integrally, is shown with novel shape and electrode construction. Also, the quartz crystal tuning fork resonator, capable of vibrating in a fundamental mode and having a high frequency stability can be provided with a small series resistance and a high quality factor, even when the tuning fork resonator is miniaturized. In addition, from a relationship of an amplification rate and a feedback rate, an output signal of the quartz crystal oscillating circuit having an oscillation frequency of the fundamental mode vibration for the quartz crystal tuning fork resonator can be provided with the high frequency stability.11-20-2008
20080211344BOUNDARY ACOUSTIC WAVE DEVICE - A dielectric substance is laminated on one surface of a piezoelectric substance, and an IDT and reflectors are disposed as electrodes at a boundary between the piezoelectric substance and the dielectric substance, and the thickness of the electrodes is determined so that the acoustic velocity of the Stoneley wave is decreased less than that of a slow transverse wave propagating through the dielectric substance and that of a slow transverse wave propagating through the piezoelectric substance, thereby forming a boundary acoustic wave device.09-04-2008
20100141088ELASTIC BOUNDARY WAVE DEVICE - An elastic boundary wave device of the present invention includes a plurality of elastic boundary wave elements. The elastic boundary wave elements each include a piezoelectric material layer, an electrode disposed over the piezoelectric material layer, a first dielectric layer formed over the piezoelectric material layer so as to cover the electrode, and a second dielectric layer formed over the first dielectric layer. An acoustic velocity of the second dielectric layers is faster than an acoustic velocity of the first dielectric layers, and the acoustic velocity of the second dielectric layer of at least one elastic boundary wave element from among the plurality of elastic boundary wave elements is different from the acoustic velocity of the second dielectric layer of another of the elastic boundary wave elements. This enables improving the degree of suppression in use as a filter in the elastic boundary wave device.06-10-2010
20110221303ELECTRONIC DEVICE - An electronic device includes: a base substrate having a resonator element fixed to one of principal surfaces, and provided with at least one lead wire; a frame member having a substantially rectangular shape, disposed on the one of the principal surfaces so as to surround a periphery of the resonator element, wherein side surface of the base substrate is provided with a side surface recessed section having a terminal electrically connected to the lead wire, and the side surface recessed section is disposed on the side surface of the base substrate on a side where the resonator element is fixed, at a position where at least a part of the side surface recessed section overlaps an area between two extended lines passing through respective outer side surfaces of the frame member opposed to each other in a plan view from the one of the principal surfaces of the base substrate.09-15-2011
20090230817FERROELECTRIC SINGLE CRYSTAL, SURFACE ACOUSTIC WAVE FILTER COMPRISING THE SAME, AND PRODUCTION METHOD THEREOF - The present invention provides a lithium tantalate (LT) single crystal or a lithium niobate (LN) single crystal, which has strong resistance to stress shock or thermal shock, and a surface acoustic wave filter comprising a piezoelectric substrate produced from the single crystal. The lithium tantalate single crystal or lithium niobate single crystal of the invention contains at least one additional element selected from the group consisting of iron, copper, manganese, molybdenum, cobalt, nickel, zinc, carbon, magnesium, titanium, tungsten, indium, tin, rhenium, scandium, rhodium, ruthenium, palladium, silver, platinum, gold, yttrium, neodymium, iridium, germanium, barium, cesium, strontium, gallium, cerium and other transition elements at a ratio of from 0.002 wt % or more to 0.1 wt % or less, and has excellent stress shock characteristics and thermal shock characteristics.09-17-2009
20090001849Piezoelectric component and manufacturing method thereof - A piezoelectric component with a piezoelectric element includes a piezoelectric substrate, at least one oscillating section formed on the piezoelectric substrate, and an element wiring section connected to the oscillating section. A side face side hollow section forming layer and a lid face side hollow section forming layer made of photosensitive resin surround the top face and side face of the oscillating section while forming a gap so as to provide a hollow section.01-01-2009
20100181869Ultra-thin film electrodes and protective layer for high temperature device applications - An ultra-thin film electrode including at least one electrically conductive layer disposed upon an adhesive layer that is carried by a substrate.07-22-2010
20100187949Component with Reduced Temperature Response, and Method for Production - A component has a substrate and a compensation layer. A lower face of the substrate is mechanically firmly connected to the compensation layer. The lower face of the substrate and the upper face of the compensation layer have a topography.07-29-2010
20090039732Surface acoustic wave device - A surface acoustic wave device includes a SAW device chip mounted on a substrate, and a lid provided so as to cover the SAW device. A maximum thickness of a ceiling portion of the lid that does not face the SAW device chip is greater than that of another ceiling portion of the lid that faces the SAW device chip.02-12-2009
20090072660Slider That Utilizes Surface Acoustic Waves - An apparatus includes a slider having a projection extending therefrom wherein the projection includes a transducer formed thereon. The apparatus also includes a surface acoustic wave generator positioned to direct a surface acoustic wave toward the projection. The transducer may be structured and arranged for performing a data storage read and/or write operation. The surface acoustic wave propagates along a surface of the projection in order to provide for the projection to be in contact with a data storage media. A related method is also provided.03-19-2009
20110018389Acoustic Wave Device and Method for Production of Same - A small and highly reliable acoustic wave device and a method for production of the same will be provided. The acoustic wave device has a piezoelectric substrate 01-27-2011
20090033175Measuring sensor with at least one saw (surface acoustic wave ) element - A measuring sensor comprises at least one SAW (surface acoustic wave) element (02-05-2009
20110241482Method of Rapidly Interrogating Elastic Wave Sensors - A method of remotely interrogating a passive sensor, comprising at least one resonator, so as to determine the resonant frequency of said resonator, having a resonant frequency response defined by the design of said resonator, includes: a preliminary frequency-scan step for interrogating said resonator over a frequency range allowing for the rapid determination of a first resonant frequency (fr10-06-2011
20090096321SURFACE ACOUSTIC WAVE DEVICE, AND MANUFACTURING METHOD THEREFOR - A surface acoustic wave device is enable to prevent electrode erosion, without any specific environmental process. The surface acoustic wave device includes a piezoelectric substrate, an electrode for the formation of surface acoustic wave, being formed on the piezoelectric substrate, on the piezoelectric substrate, a frame-shaped layer surrounding the electrode for the formation of surface acoustic wave, and a lid body formed on the frame-shaped layer by bonding, so as to form a hollow portion between the lid body and the electrode for the formation of surface acoustic wave. The frame-shaped layer and the lid body include photosensitive resin, and the lid body includes a through hole, and the through hole is sealed with a halogen-free thermosetting resin.04-16-2009
20110175487METHOD FOR PRODUCING A DIELECTRIC LAYER IN AN ELECTROACOUSTIC COMPONENT, AND ELECTROACOUSTIC COMPONENT - The invention relates to a method for producing a dielectric layer (07-21-2011
20090051246PIEZOELECTRIC DEVICE PACKAGE AND METHOD FOR DOWNHOLE APPLICATIONS - A new and improved piezoelectric device package that can withstand pressures of at least 25,000 psi, high temperatures of at least 300° C., as well as acidic and caustic environments, such as often encountered in oil and gas wells. The package is comprised of a hermetically sealed piezoelectric device header with an internal cavity for mounting various types of piezoelectric devices, an impedance matching network, an antenna, and a protective radome outer cover. The internal structure of the device package is for the most part solid with the exception of an approximate 1-micron space above the surface of the piezoelectric device to allow acoustic waves a path to travel. The general shape of the piezoelectric device package is typically that of a round disk that can be installed and secured by attaching fingers or other means in a bored cavity of a tool, pipe, or other piece of equipment.02-26-2009
20090051245Surface Acoustic Wave Device and Method for Manufacturing the Same - A surface acoustic wave device includes a piezoelectric substrate and a lid spaced apart from each other oppositely by a specific interval. A comb electrode and a pad electrode are provided to the piezoelectric substrate on a main surface on the lid side, and an external terminal is provided to the lid on a surface on the opposite side to the piezoelectric substrate. Further, the surface acoustic wave device includes a connection electrode that electrically connects the pad electrode and the external terminal, and an insulator interposed between at least one of the main surface of the piezoelectric substrate and the pad electrode and the lid.02-26-2009
20110133601Thin Film Bismuth Iron Oxides Useful for Piezoelectric Devices - The present invention provides for a composition comprising a thin film of BiFeO06-09-2011
20090174285BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes an IDT electrode disposed at the boundary between a first medium and a second medium, the IDT electrode having electrode fingers, in which a third medium is arranged between the electrode fingers of the IDT electrode, the third medium having an acoustic impedance Z07-09-2009
20100219718BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.09-02-2010
20120056507Microacoustic Component and Production Method - The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.03-08-2012
20100052473ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An acoustic wave device includes: a piezoelectric substrate on which an acoustic wave element and an electrode pad connected to the acoustic wave element are formed; a first resin part having a first opening located above a function area in which an acoustic wave is excited by the acoustic wave element and a second opening located above the electrode pad; a second resin part that covers the first opening and has a third opening located above the second opening; and a metal layer formed on the electrode pad in the second opening, the first opening and the second opening being inversely tapered.03-04-2010
20090021109UNDER BUMP METAL FILM, METHOD FOR FORMING SAME, AND SURFACE ACOUSTIC WAVE DEVICE - An under bump metal film formed on a substrate includes a diffusion-resistant barrier layer made of a platinum group metal film, and an aluminum-based stress relaxation layer formed under the diffusion-resistant barrier layer.01-22-2009
20120228993Apparatus for Transducing a Surface Acoustic Wave - An apparatus including a piezoelectric substrate configured to propagate a surface acoustic wave; and a transducer, coupled to the piezoelectric substrate, including at least one graphene electrode configured to transduce a propagating surface acoustic wave to an electrical signal.09-13-2012
20120280594MICROELECTROMECHANICAL SYSTEMS (MEMS) RESONATORS AND RELATED APPARATUS AND METHODS - Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.11-08-2012
20120280595Metallization having High Power Compatibility and High Electrical Conductivity - A metallization can be used for components working with acoustic waves. The metallization includes a base having a bottom layer comprising titanium, and an upper layer comprising copper. A top layer of the metallization disposed on the base comprises aluminum.11-08-2012
20120091856SUBSTRATE, MANUFACTURING METHOD OF SUBSTRATE AND SAW DEVICE - A substrate having appropriate strength and allowing firm bonding to a piezoelectric substrate and the like can be obtained at a lower cost. The substrate for an SAW device is formed of spinel, and PV value representing difference in level of one main surface of the substrate is at least 2 nm and at most 8 nm. Preferably, average roughness Ra of one main surface of the substrate is at least 0.01 nm and at most 0.5 nm. With such characteristics, the main surface of the substrate to be bonded to a piezoelectric substrate of the SAW device can be bonded satisfactorily to the piezoelectric material forming the piezoelectric substrate utilizing van der Waals interaction.04-19-2012
20130009517SURFACE ACOUSTIC WAVE SENSOR SYSTEM AND MEASUREMENT METHOD USING MULTIPLE-TRANSIT-ECHO WAVE - A surface acoustic wave (“SAW”) sensor system comprises a signal generating part, which applies an electrical signal to a SAW sensor, the SAW sensor connected to the signal generating part, which converts the electrical signal into a SAW, senses a measurement target using the SAW, and converts a SAW output corresponding to the measurement target into an electrical signal, and a signal measuring part connected to one side of the SAW sensor, which detects a change in the electrical signal by time-gating a multiple-transit-echo wave.01-10-2013
20130134831ACOUSTIC WAVE DEVICE AND MULTILAYERED SUBSTRATE - An acoustic wave device includes: a substrate; a functional element that is located on the substrate and excites acoustic waves; a side wall portion that is made of a metal and is located on the substrate so as to surround the functional element; a metal plate that is located above the functional element and the side wall portion, and seals the functional element so that a space is formed above the functional element; and a terminal that is located on the substrate and further out than the side wall portion, and is electrically connected to the functional element.05-30-2013
20130181574HIGH FREQUENCY ULTRASONIC TRANSDUCER AND MATCHING LAYER COMPRISING CYANOACRYLATE - In one aspect, matching layers for an ultrasonic transducer stack having a matching layer comprising a matrix material loaded with a plurality of micron-sized and nano-sized particles. In another aspect, the matrix material is loaded with a plurality of heavy and light particles. In another aspect, an ultrasound transducer stack comprises a piezoelectric layer and at least one matching layer. In one aspect, the matching layer comprises a composite material comprising a matrix material loaded with a plurality of micron-sized and nano-sized particles. In a further aspect, the composite material can also comprise a matrix material loaded with a plurality of heavy and light particles. In a further aspect, a matching layer can also comprise cyanoacrylate.07-18-2013
20130181573Individually identifiable surface acoustic wave sensors, tags and systems - A surface-launched acoustic wave sensor tag system for remotely sensing and/or providing identification information using sets of surface acoustic wave (SAW) sensor tag devices is characterized by acoustic wave device embodiments that include coding and other diversity techniques to produce groups of sensors that interact minimally, reducing or alleviating code collision problems typical of prior art coded SAW sensors and tags, and specific device embodiments of said coded SAW sensor tags and systems. These sensor/tag devices operate in a system which consists of one or more uniquely identifiable sensor/tag devices and a wireless interrogator. The sensor device incorporates an antenna for receiving incident RF energy and re-radiating the tag identification information and the sensor measured parameter(s). Since there is no power source in or connected to the sensor, it is a passive sensor. The device is wirelessly interrogated by the interrogator.07-18-2013
20110309720PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING SAME - A piezoelectric device employs solder on a roughened surface to improve bonding of electrical contacts with the device package. The device package includes a base, a crystal frame and a lid. The base includes connecting electrodes on a side of the base adjacent the crystal frame. The base has a through hole and a through hole electrode formed in the through hole in electrical contact with the connecting electrodes. The through hole is sealed with a sealing material and a first external electrode layer, which is electrically connected to the through hole electrode, is formed on an outside surface of the base opposite the piezoelectric plate. A second external electrode layer is formed to cover the first external electrode layer and the sealing material.12-22-2011
20120074810MECHANICAL RESONATING STRUCTURES INCLUDING A TEMPERATURE COMPENSATION STRUCTURE - Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.03-29-2012
20100117483ELASTIC WAVE DEVICE AND METHOD OF PRODUCING THE SAME - An elastic wave device has a structure that prevents cracks from being formed in a piezoelectric substrate in flip-chip bonding using a bump, that minimizes the contact resistance in a contact portion where wiring patterns are electrically connected to each other, and that improves the insertion loss. In the elastic wave device, first and second multilayer electrically conductive films are provided on a piezoelectric substrate, the first multilayer electrically conductive film defines an IDT electrode and a first wiring pattern, the second multilayer electrically conductive film defines an electrode pad to which a bump is connected and a second wiring pattern, at least one contact portion where the second wiring pattern is overlapped on the first wiring pattern so as to be electrically connected to each other is provided, a top electrically conductive film of the first multilayer electrically conductive film is a Ti film, and a bottom electrically conductive film of the second multilayer electrically conductive film is an Al-based electrically conductive film including Al or an alloy mainly containing an Al.05-13-2010
20090121584Surface Acoustic Wave Element and Surface Acoustic Wave Device - A surface acoustic wave element 05-14-2009
20130076205ACOUSTIC WAVE DEVICE AND FABRICATION METHOD OF THE SAME - A fabrication method of an acoustic wave device includes: forming acoustic wave elements on a first substrate; forming protrusion electrodes and seal rings on the first substrate simultaneously by an electrolytic plating method, the protrusion electrodes being electrically connected to the acoustic wave elements, each of the seal rings surrounding related acoustic wave elements out of the acoustic wave elements and related protrusion electrodes out of the protrusion electrodes electrically connected to the related acoustic wave elements; and cutting a plating power-supply line used in the electrolytic plating method in a step of dividing the first substrate into pieces each including a corresponding one of the seal rings so as to electrically separate the related acoustic wave elements from the corresponding one of the seal rings.03-28-2013
20090189483BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a LiNbO07-30-2009
20090243430Surface Acoustic Wave Element and Communication Device - An IDT electrode (10-01-2009
20080278031Transducer Working With Surface Waves - A transducer operating with surface acoustic waves is specified, which is divided into cells, whose length essentially equals one wavelength, comprising cells of the second type, which are SPUDT cells and which have an excitation intensity of 100%, and at least one cell of the first cell type, which has at least four excitation centers, wherein an excitation center lies between two adjacent fingers with different polarities, and wherein the cell of the first cell type has an excitation intensity of a maximum of 30%.11-13-2008
20120181898ACOUSTIC WAVE DEVICE - An acoustic wave device includes, a substrate, an acoustic wave device chip that has a vibration part exciting an acoustic wave and is mounted on a surface of the substrate so that the vibration part is exposed to a space formed between the substrate and the acoustic wave device chip, and a joining part that is provided so as to surround the vibration part and joins the substrate and the acoustic wave device chip together. The joining part includes a first member made of solder, and a second member that is stacked on the first member and is made of a substance having a melting point higher than the solder. The second member has a thickness larger than a coplanarity of the surface of the substrate.07-19-2012
20110012477Surface-Wave Passive Sensor Including an Integrated Antenna, and Medical Applications Using Such a Type of Passive Sensor - A remotely interrogatable passive sensor is provided. The sensor comprises an antenna and at least one surface wave resonator including a transducer with inter-digitated electrodes with two ports on the surface of a piezoelectric substrate, in which the antenna comprises conducting elements connected to the two ports and integrated onto said piezoelectric substrate. Advantageously, the antenna elements are folded on the substrate to enhance compactness. The passive sensor can be used for medical applications such as tissue analysis or arterial pressure measurement.01-20-2011
20090236934SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME - A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) formed on the piezoelectric substrate, an interconnection electrode that is provided on the piezoelectric substrate and is connected to the IDT, the IDT being made of a metal identical to that of the IDT, an inorganic insulation layer that is provided on the piezoelectric substrate so that at least the interconnection electrode is exposed, an insulative resin layer that is located on an interface between the inorganic insulation layer and a portion of the interconnection electrode exposed from the inorganic insulation layer and is formed so as to cover a side surface of the interconnection electrode, and a metal layer that is provided on the interconnection electrode and the insulative resin layer.09-24-2009
20090009028SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO01-08-2009
20100038991High frequency surface acoustic wave device and the substrate thereof - A high frequency SAW device and the substrate thereof are disclosed. The disclosed high frequency SAW device does not need to use the conventional and expensive sapphire substrate as its substrate. Besides, the disclosed substrate for a high-frequency SAW device can replace the conventional sapphire substrate in the use of the substrate for a high frequency SAW device. The disclosed high frequency SAW device comprises: a substrate; a first buffering layer forming on the surface of the substrate; a second buffering layer forming on the surface of the first buffering layer; a piezoelectric layer forming on the surface of the second buffering layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface of or beneath the piezoelectric layer.02-18-2010
20100259129SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a LiNbO10-14-2010
20090315430Piezoelectric component and manufacturing method thereof - An object of the invention is to miniaturize a piezoelectric component and reduce the manufacturing cost thereof. Therefore the invention comprises: a piezoelectric element composed of a piezoelectric substrate, comb-shaped electrodes formed on a principal surface of the piezoelectric substrate, and wiring electrodes having element wiring disposed adjacent to the comb-shaped electrodes; an outer wall section formed from photosensitive resin film with an opening section formed on a principal surface of the piezoelectric substrate; and a ceiling section formed from photosensitive resin film laminated onto a top end surface of the outer wall section. A hermetic hollow section C surrounding the comb-shaped electrodes is formed between the outer wall section and the ceiling section, and electrode posts disposed so as to pass through the outer wall section and the ceiling section and that electrically connect the wiring electrodes and terminal electrodes disposed on a rear surface of the ceiling section are formed, and on a principal surface of the piezoelectric substrate are sequentially formed; a SiO12-24-2009
20120098387ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An elastic wave device includes a piezoelectric thin film formed from a piezoelectric single crystal substrate by peeling, an inorganic layer formed on a rear surface of the piezoelectric thin film, an elastic layer disposed on a surface of the inorganic layer opposite to the piezoelectric thin film, and a support member adhered to a surface of the elastic layer opposite to the inorganic layer. The elastic layer reduces stress generated when the piezoelectric thin film provided with the inorganic layer and the support member are adhered to each other and has a predetermined elastic modulus. The inorganic layer is formed of a material having a higher elastic modulus than that of the elastic layer and prevents damping generated when the elastic layer is provided.04-26-2012
20090152982ELASTIC WAVE DEVICE, FILTER DEVICE, COMMUNICATION MODULE AND COMMUNICATION APPARATUS - An elastic wave device including a piezoelectric substrate, comb-like electrodes formed on the piezoelectric substrate, and a dielectric layer formed on the piezoelectric substrate. The dielectric layer formed on the piezoelectric substrate covers the comb-like electrodes and the thickness of the dielectric layer formed on the piezoelectric substrate is larger than the sum of the thickness of the comb-like electrodes and the thickness of the dielectric layer formed on the comb-like electrodes.06-18-2009
20100038992SURFACE ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME - A surface acoustic wave device includes a piezoelectric substrate; comb electrodes provided on a first surface of the piezoelectric substrate; and an insulating film provided on at least one of the first surface of the piezoelectric substrate and a second surface thereof opposite to the first surface, the insulating film having a thickness greater than that of the piezoelectric substrate and having a linear expansion coefficient smaller than that of the piezoelectric substrate in a direction of propagation of a surface acoustic wave.02-18-2010
20090152981SURFACE ACOUSTIC WAVE DEVICE, MODULE DEVICE, OSCILLATION CIRCUIT, AND METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE - An objective is to provide an SH wave type SAW device which is a surface acoustic wave device using a quartz substrate and which is small in size and has a large Q value and excellent frequency aging characteristics.06-18-2009
20080265711Mechanical packaging of surface acoustic wave device for sensing applications - A method and apparatus, wherein a die is attached to a supporting base structure utilizing a rigid bond adhesive for a SAW (Surface Acoustic Wave) sensor. A rigid bond adhesive with a preferably high glass transition temperature (Tg) can be applied directly between the die and the die supporting structure in a pattern to eliminate time dependent gradual stress effects upon SAW sensor. The rigid bond adhesive can then be cured, which results in a high yield strength and a high young's modulus. The supporting base and the die material comprise a same co-efficient of thermal expansion in order to avoid die displacement over temperature.10-30-2008
20080265712Energy Harvesting Device Manufactured by Print Forming Processes - Embodiments of making an energy harvesting device are described. In one embodiment, a case and integrated piezoelectric cantilever to harvest vibration energy from an environment being sensed is produced via a print forming method injection molding method. The cantilever device consists of a piezoelectric material member, and a proof mass of high density material coupled to the piezoelectric member. The print forming method is used to build up the base and walls of the device as well as the neutral layers of the piezoelectric member. Metal layers are printed to form the electrode layers of the piezoelectric member and the electrical contact portions of the device. Passive components can also be formed as part of the layers of the device. The entire assembly can be encapsulated in plastic.10-30-2008
20130214640SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device having high heat radiation performance is provided. A surface acoustic wave device includes a piezoelectric substrate, IDT electrodes, a cover, and wiring lines. The IDT electrodes are arranged on a main surface of the piezoelectric substrate. The cover is joined to the main surface. The wiring lines extend to join portions of the main surface and the cover. The cover is provided with through-holes facing the wiring lines, respectively. The surface acoustic wave device further includes under-bump metals arranged in the through-holes, respectively, and bumps arranged on the under-bump metals, respectively. In a plan view, each of the under-bump metals is provided in a region larger than a joint portion of each of the under-bump metals and the corresponding one of the bumps08-22-2013
20100007241WAVEGUIDE COMPONENTS ON THE BASIS OF ACOUSTIC SURFACE WAVES, AND THEIR USE - The invention relates to waveguide components based on acoustic surface waves, comprising at least one interdigital converter for exciting acoustic surface waves in a piezoelectric substrate or a piezoelectric layer. The object of the invention is to change known waveguide components, comprising at least one interdigital converter for exciting acoustic surface waves in a piezoelectric substrate or a piezoelectric layer, such that no reflectors are necessary with an otherwise equivalent function. The inventive waveguide components are characterized in that the interdigital converter(s) a) is or are disposed at a defined distance over the piezoelectric substrate or the piezoelectric layer for exciting wave fields, or b) is or are in contact with the piezoelectric substrate or the piezoelectric layer, wherein in version a) the piezoelectric substrate is designed as a ring and the piezoelectric layer is designed as a circular region. In case of version b), the interdigital converter and/or the piezoelectric layer form circular regions. The components can be used for example as resonators, filters, oscillators and sensors.01-14-2010
20110266918PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - A piezoelectric device includes IDT electrodes and solves various problems resulting from the IDT electrodes. The piezoelectric device has a configuration in which a piezoelectric thin-film and a support are bonded together such that the piezoelectric thin-film is supported by the support. IDT electrodes and interconnect electrodes are provided on a surface of the piezoelectric thin-film that is located on the support side. The piezoelectric thin-film includes a region in which the IDT electrodes are provided and on which no support is provided but an opening is formed. This allows the IDT electrodes and the piezoelectric thin-film and the IDT electrode-formed region of the piezoelectric thin-film to not be in contact with the support, thereby defining a membrane including only the piezoelectric thin-film and the IDT electrodes as elements, the piezoelectric thin-film and the IDT electrodes being disposed therein and being important for properties of the piezoelectric device.11-03-2011
20090096320SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a LiNbO04-16-2009
20080315719Fuel injector having encased piezo electric actuator - An actuator for a fuel injector is disclosed. The actuator has a piezo element, a casing, and at least one end plate. The casing is fabricated through a deep draw process, has bellows, and is configured to house the piezo element. The at least one end plate is hermetically connected to an end portion of the casing.12-25-2008
20080315718Sensing systems utilizing acoustic wave devices - A sensing system includes an acoustic wave device comprising a body of piezoelectric material, and a first electrode assembly mounted on the piezoelectric body whereby an appropriate input applied to the electrode assembly produces an acoustic wave in the piezoelectric body and a first frequency response. The acoustic wave device also has a second electrode assembly to produce a second frequency response, the second electrode assembly being in contact with an area sensitive to a supplied stimulus to cause a characteristic of the sensitive area to change when a supplied stimulus is sensed to thereby change the second frequency response. The acoustic wave device has an output connected to the input of an amplifier, the amplifier having an output connected to the input of a coupling device. The coupling device is connected to the input of the acoustic wave device and has an output connected to a detector. The acoustic wave device, the amplifier and the coupling device are configured to be in an “off” condition when no supplied stimulus is sensed by the sensitive area of the acoustic wave device and to be in an “on” condition when a supplied stimulus is sensed by the sensitive area. The coupling device is configured to send a change signal to the detector when a change from the “off” condition to the “on” condition occurs.12-25-2008
20100181868MULTI-PORT MECHANICAL RESONATING DEVICES AND RELATED METHODS - Multi-port devices having multiple electrical ports are described, as are related methods. Some of the multi-port devices may have two input ports and two output ports, and may be driven differentially, in a single-ended mode, in a single-ended to differential mode, or in a differential to single-ended mode. The multi-port devices may include one or more transducers coupled to the electrical ports.07-22-2010
20100259128SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a LiNbO10-14-2010
20100277035PIEZOELECTRIC DEVICE - A piezoelectric device includes a piezoelectric substrate, a conductive pattern which is provided on one main surface of the piezoelectric substrate and which includes an IDT electrode, a supporting layer which is arranged on the one main surface of the piezoelectric substrate so as to surround the periphery of an IDT-forming region in which the IDT electrode is provided and which has a thickness greater than that of the IDT electrode, and a cover layer which is arranged on the supporting layer and which covers the IDT-forming region. The supporting layer includes removed sections provided at a plurality of positions at least in a region close to the IDT-forming region, the removed sections being obtained by partially removing a portion of the supporting layer to be bonded to the one main surface of the piezoelectric substrate.11-04-2010
20100237741SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device including an SiO film has improved frequency temperature characteristics, prevents an increase in insertion loss, obtains a reflection coefficient of an electrode that is sufficiently high, and achieves more preferable resonant characteristics and filter characteristics. The surface acoustic wave device includes a LiNbO09-23-2010
20110057540SAW TRANSPONDER FOR SENSING PRESSURE - The present invention relates to a surface acoustic wave (SAW) transponder for sensing pressure, and more particularly, to a SAW transponder for sensing pressure, in which a pressure sensor is connected to a SAW transponder receiving an applied radio frequency (RF) signal to generate a surface acoustic wave (SAW) and which can detect a change of a pressure through an amplitude change of a SAW. According to the present invention, a structure of a surface acoustic wave (SAW) transponder for sensing pressure is improved, and thus the change of an external pressure can be effectively detected. In addition, since the variations of the external pressure and the pressure sensor have a linear relationship with each other, the change of the external can be easily and quantitatively detected, and an external transmit/receive device can easily analyze a pressure signal.03-10-2011
20090200894BOUNDARY ACOUSTIC WAVE DEVICE MANUFACTURING METHOD AND BOUNDARY ACOUSTIC WAVE DEVICE - A method for manufacturing a boundary acoustic wave device includes the steps of preparing a laminated structure in which an IDT electrode is disposed at an interface between first and second solid media and reforming the first medium and/or the second medium by externally providing the laminated structure with energy capable of reaching the inside of the first medium and/or the second medium and thus adjusting a frequency of the boundary acoustic wave device. The above provides a boundary acoustic wave device manufacturing method that enables frequency adjustment to be readily performed with high accuracy.08-13-2009
20090072659SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO03-19-2009
20110121683Piezoelectric Resonator Operating In Thickness Shear Mode - An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric material can be a piezoelectric and the second dielectric material can be non-piezoelectric. In another embodiment, the first dielectric material is a piezoelectric of first polarity and the second dielectric material is a piezoelectric of opposite polarity or different polarity. Where needed, the resonant layer is supported on a reflector composed of series of layers of high acoustic impedance material(s) alternating with layers of low acoustic impedance material(s). For example, the reflector comprises AlN, Al05-26-2011
20110043075Surface Acoustic Wave Device and Communication Apparatus Using Same - among the plurality of IDT electrodes having serially divided type structures, when designating any three continuously and sequentially arranged IDT electrodes as first, second, and third IDT electrodes in the order of arrangement, electrode fingers are arranged so that a first electrode finger pitch P02-24-2011
20110241481SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device has a large electromechanical coupling coefficient, a low insertion loss, and high resistance to static electricity. In the surface acoustic wave device, a piezoelectric substance includes a plurality of grooves. Each electrode finger of an IDT electrode includes a first electrode layer disposed in the grooves and a second electrode layer disposed on the first electrode layer and located at a position higher than the upper opening of the grooves. In a surface acoustic wave device, the one-half power of the product of the cube of the average density (ρ10-06-2011
20110241480Surface acoustic wave device - A surface acoustic wave device according to the present invention includes a piezoelectric monocrystal substrate 10-06-2011
20100038993SURFACE ACOUSTIC WAVE ELEMENT - A surface acoustic wave element includes: a diamond layer; an alumina nitride layer provided on the diamond layer; a silicon oxide layer provided on the alumina nitride layer; and a pair of electrodes provided between the alumina nitride layer and the silicon oxide layer, the electrodes applying a voltage to the alumina nitride layer. If a thickness of the alumina nitride layer is represented by H02-18-2010
20100072856SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a LiTaO03-25-2010
20120146457ACOUSTIC WAVE ELEMENT AND ACOUSTIC WAVE ELEMENT SENSOR - An acoustic wave element includes a piezoelectric body, an input IDT electrode, an output IDT electrode, a propagation path provided between the input IDT electrode and the output IDT electrode, a first dielectric layer provided on the piezoelectric body so as to cover the input IDT electrode and the output IDT electrode, and a reactive portion provided on the propagation path and reacting to a substance to be detected or a binding substance that binds with the substance to be detected. The main acoustic wave becomes, in the input IDT electrode and the output IDT electrode, a boundary acoustic wave that propagates between the piezoelectric body and the first dielectric layer, and becomes, in the propagation path, a surface acoustic wave that propagates on an upper surface of the propagation path. With this structure, deterioration of the element characteristic is suppressed.06-14-2012
20110101822Surface acoustic wave sensor and system - A surface acoustic wave sensor to measure physical, biological or chemical parameters is claimed. Using different piezoelectric substrate materials, piezoelectric substrates with different thicknesses or metallizations with different thicknesses or patterns are used to distinguish between the effects of different physical, biological or chemical parameters.05-05-2011
20100244626SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT - A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ09-30-2010
20100244625Surface Acoustic Wave Device and Method for Production of Same - A method for fabricating a small and low-profile surface acoustic wave device which can be formed collectively by a wafer process without causing deterioration in characteristics is provided. The surface acoustic wave device has a piezoelectric substrate 09-30-2010
20100244624ACOUSTIC WAVE DEVICE AND METHOD OF PRODUCING THE SAME - A method of producing an acoustic wave device includes: forming an interdigital electrode 09-30-2010
20090256444SURFACE ACOUSTIC WAVE DEVICES - A surface acoustic wave device has a supporting substrates, a propagation substrate 10-15-2009
20110133600ELASTIC WAVE DEVICE - An elastic wave device has a low temperature coefficient of frequency (TCF), a low insertion loss, a high electromechanical coupling coefficient (k06-09-2011
20100123367LAMB WAVE DEVICE - There is provided a lamb wave device with small variations in frequency, the device including: a piezoelectric thin film; an IDT electrode which is provided on a main surface of the piezoelectric thin film; and a support structure which supports a laminate of the IDT electrode and the piezoelectric thin film, and is formed with a cavity that isolates the laminate, wherein a film thickness h of the piezoelectric thin film and a pitch p of a finger of the IDT electrode are selected such that a lamb wave is excited at a target frequency, the lamb wave making dispersibility of a sonic velocity v with respect to the film thickness h of the piezoelectric thin film small.05-20-2010
20100060102ACOUSTIC WAVE DEVICE AND ELECTRONIC EQUIPMENT USING THE SAME - An acoustic wave device has: a piezoelectric body; an interdigital electrode that is arranged on the piezoelectric body and excites an acoustic wave; and a dielectric layer that is arranged on the piezoelectric body so as to cover the interdigital electrode. The dielectric layer includes a composition changing portion made up of a medium where propagation velocity of a transverse wave continuously increases upward. With this configuration, it is possible to shift a spurious radiation by a high-order mode that propagates inside the dielectric layer to a higher frequency, so as to reduce an influence of the spurious radiation by the high-order mode.03-11-2010
20100060101ELASTIC WAVE ELEMENT - An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length λ of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/λ≧0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.03-11-2010
20110148250Spherical surface acoustic wave apparatus - A spherical surface acoustic wave apparatus includes a surface acoustic wave propagation substrate which has a surface acoustic wave circulation path on an outer surface thereof. The path is configured to be annular and continuous using at least a part of a spherical shape, and is able to be excited to generate surface acoustic wave and allows the excited surface acoustic wave to propagate and circulate therein in its annular and continuous direction. The apparatus further includes a substrate support which supports a region of the outer surface of the substrate, the region excluding the circulation path, and a support for a surface acoustic wave excitation/detection unit, which supports an elastic member supporting the excitation/detection unit, which makes the excitation/detection unit being in contact with the circulation path of the outer surface of the substrate through the elastic member, and which elastically deforms the elastic member.06-23-2011
20110115334SURFACE ACOUSTIC WAVE ELEMENT - A surface acoustic wave element includes a piezoelectric substrate made of a LiNbO05-19-2011
20110068655PISTON MODE ACOUSTIC WAVE DEVICE AND METHOD PROVIDING A HIGH COUPLING FACTOR - An interdigital transducer includes an edge gap length between ends of electrodes and the opposing busbar increased sufficiently for reducing or even eliminating tunneling effects through the gap. As a result, a wave velocity of the acoustic wave within the longitudinally extending edge regions is less than the wave velocity within the transducer center region, and the wave velocity within the opposing gap regions is greater than a velocity in the transducer center region, thus an essentially flat propagation mode results within the aperture of the transducer. A SAW transducer or a SAW resonator on a high coupling substrate will thus guide the energy in the transducer region without a need for apodization. Higher equivalent coupling factors as well as lower losses are obtained.03-24-2011
20120306315PIEZOELECTRIC SENSOR - A piezoelectric plate in the piezoelectric sensor is obtained from a rotated Y-plate where a rotation angle around the X-axis is set according to a type of the piezoelectric crystalline material, a detection region is located on a surface parallel to an X-Z plane, and a transmitting and a receiving parts are opposite to each other at positions sandwiching the detection region along an X-axis direction of the piezoelectric plate. When a guided wave excited by applying a frequency signal from the transmitting part satisfies ξh=mπ/(2λ) (2h: thickness of the piezoelectric plate, ξ: wave number in the X-axis, λ: wave number in thickness direction normalized by ξ, m: positive even number), the rotation angle satisfies the displacement of a P wave component of the guided wave becomes the maximum, or the displacement of the SH wave component of the guided wave becomes the maximum.12-06-2012
20120056506BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a first medium, a second medium laminated on the first medium, and an IDT electrode arranged at an interface between the first medium and the second medium. The boundary acoustic wave device further includes a reformed portion disposed in at least one of the first medium and the second medium, reformed by externally provided energy, and having frequency characteristics different from frequency characteristics exhibited when the boundary acoustic wave device includes only at least one of the first medium and the second medium.03-08-2012
20120248933PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD THEREFOR - A manufacturing method, which realizes general versatility of an external connection terminal by reducing deterioration of characteristics and a decrease in yield rate of a piezoelectric device in an external connection terminal forming process, and a piezoelectric device manufactured by this method are provided. Before a piezoelectric device is sealed together with a ceiling layer to form a package, an electrode structure serving as an external connection terminal is provided beforehand on a substrate mounted with a key area of the device, and after formation of the key area of the device, the piezoelectric device is sealed and packaged together with the ceiling layer. The piezoelectric device of the present invention can accommodate a three-dimensional structure by providing a rewiring layer on a principal surface of the substrate.10-04-2012
20090058225ACOUSTIC WAVE DEVICE - An acoustic wave device includes a piezoelectric substrate, IDT electrodes, temperature characteristic-improving layer, and frequency-adjusting layer arranged on the piezoelectric substrate in that order. The piezoelectric substrate has a negative temperature coefficient of frequency TCF. The temperature characteristic-improving layer is made of a material having a positive temperature coefficient of frequency TCF. The frequency-adjusting layer includes a glass thin-film having a velocity of transverse wave less than a velocity of transverse wave of the temperature characteristic-improving layer.03-05-2009
20100052471High frequency surface acoustic wave device - A high frequency surface acoustic wave device is disclosed. The disclosed high frequency surface acoustic wave device can modulate its central frequency easily, by changing the thickness of its nanocrystalline diamond layer. The disclosed high frequency surface acoustic wave device comprises: a silicon substrate; a nanocrystalline diamond layer located above the silicon substrate; a piezoelectric layer formed on the surface of the nanocrystalline diamond layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface or beneath of the piezoelectric layer. Besides, the thickness of the nanocrystalline diamond layer is preferably between 0.5 μm and 20 μm. The piezoelectric layer is preferably made of ZnO, AlN, or LiNbO03-04-2010
20100301700ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (12-02-2010
20120256522MAGNETIC SENSOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC SENSOR APPARATUS - A magnetic sensor device includes a piezoelectric substrate and an IDT electrode disposed on the piezoelectric substrate. At least a portion of the IDT electrode is made of a ferromagnetic metal and the duty ratio of the IDT electrode is higher than about 0.5 and lower than or equal to about 0.99.10-11-2012
20090021107SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO01-22-2009
20080296999ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME - A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.12-04-2008
20100253182SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF - A surface acoustic wave device causing less wear of a dicing blade and causing less drop in a dicing speed is manufactured from a mother laminate with high yield and high precision. The surface acoustic wave device is manufactured by dicing a piezoelectric wafer. The surface acoustic wave device includes a piezoelectric substrate resulting from dicing the piezoelectric wafer, IDT electrodes and pad electrodes located on a top surface of the piezoelectric substrate. A support layer having an opening opened to the IDT electrodes is provided. An outline edge of the support layer is inside an outline edge of the top surface of the piezoelectric substrate. A cover made of an insulating material is disposed on the support layer to close the opening of the support layer. In plan view, the outline edge of the cover is aligned with the outline edge of the piezoelectric substrate.10-07-2010
20120326560WAFER LEVEL FABRICATION OF CAVITY FOR SURFACE ACOUSTIC WAVE FILTER - This invention utilizes atomic layer deposition (ALD) to deposit a layer of a material (e.g., aluminum oxide) as a passivation and adhesion enhancement layer on a piezoelectric layer and an interdigitated transducer(s) (IDT(s)) of a surface acoustic wave (SAW) filter and also utilizes a photosensitive polymer layer (e.g., epoxy dry film) for photodefining a cavity for SAW filter fabrication. The ALD layer serves to protect the IDTs from possible corrosion caused by either the polymer layer and/or moisture and at same time provide for stable operation of the SAW filter without a signal shift occurring by protection of the piezoelectric layer. The cavity, having walls formed by the photosensitive polymer, provides for a SAW fabrication process that is simple and cost effective.12-27-2012
20120286624ELASTIC WAVE DEVICE - An elastic wave device includes an elastic wave resonator which includes a comb-shaped electrode pair including a pair of com-shaped electrodes interdigitating with each other and provided on a piezoelectric substrate and which is configured to trap energy of the elastic wave therein. Each of the pair of comb-shaped electrodes includes interdigital electrode fingers connected to a common. A pitch of the interdigital electrode fingers changes along a direction perpendicular to a propagation direction of elastic wave. The elastic wave device has a small insertion loss and operates efficiently.11-15-2012
20100277036BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device with increased surge withstand voltage includes a dielectric film composed of a first dielectric and disposed on a top surface of a piezoelectric substrate; an electrode including an IDT electrode disposed on the dielectric film; and a dielectric layer composed of a second dielectric arranged so as to cover the electrode.11-04-2010
20120086309ACOUSTIC WAVE ELEMENT AND ELECTRONIC DEVICE INCLUDING THE SAME - An acoustic wave element of the present invention includes a piezoelectric substrate, an IDT electrode, a sidewall, a lid, and an adhesive layer. The IDT electrode is provided on the piezoelectric substrate. The sidewall is provided around the IDT electrode above the piezoelectric substrate. The lid is provided above the sidewall so as to cover a space above the IDT electrode. The adhesive layer is made of an adhesive provided between the lid and the sidewall. The top surface of the sidewall has a groove. The groove is filled with an adhesive, which reduces the protrusion amount of the adhesive.04-12-2012
20130207514ELASTIC WAVE DEVICE - An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode. The piezoelectric substrate includes a principal surface with a groove tapered in lateral cross section. The interdigital transducer electrode is arranged on the principal surface such that at least one portion thereof is located in the groove. The interdigital transducer electrode is a laminate including a first conductive layer, a second conductive layer, and a diffusion-preventing layer located between the first conductive layer and the second conductive layer and made of an oxide or nitride of Ti or Cr.08-15-2013
20100052470Asymmetric Composite Acoustic Wave Sensor - A composite acoustic wave device provides improved protection from environmental factors while maintaining high electrical characteristics and dynamic range is provided. The device comprises a rigid protector plate having high quality acoustical characteristics and a thickness which is a multiple of half wavelength of the resonant frequency. A piezoelectric plate is coupled to the protector plate, is supported therefrom, and forms an energy interface therewith. The piezoelectric and protector plates are dimensioned such that a wave of resonant frequency traveling between the excitation face and the loaded/sensing face, forms a substantially continuous-phase wave, at substantially peak amplitude, at the energy interface. By doing so the device decouples the electrical thickness of the wave device from the mechanical thickness thereof.03-04-2010
20130088121BOUNDARY ACOUSTIC WAVE DEVICE - Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.04-11-2013
20120187799SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes an electrode and a dielectric layer laminated on a piezoelectric substrate, in which the electrode includes a first electrode film containing Pt, Au, Ag, or Cu and a second electrode film containing Al, the normalized film thickness h/λ of the first electrode film is about 0.005 or more and at most about 0.015 in the case of Pt, the normalized film thickness h/λ of the Al film is about 0.06 or more and at most about 0.185, and the normalized film thickness h/λ of the dielectric layer is about 0.2 or less.07-26-2012
20100171389ELASTIC BOUNDARY WAVE SUBSTRATE AND ELASTIC BOUNDARY WAVE FUNCTIONAL ELEMENT USING THE SUBSTRATE - The structure of the patent is a substrate wherein a metal electrode, a dielectric thin film, and a further dielectric thin film are adhered onto a piezoelectric substrate. A substrate wherein elastic wave energy is confined in the piezoelectric substrate can be obtained. In particular, when a SiO07-08-2010
20110133599SURFACE ACOUSTIC WAVE SENSOR - A surface acoustic wave sensor is capable of detecting a specific detection object with high accuracy and is excellent in economy. The surface acoustic wave sensor includes a piezoelectric substrate and a comb shaped electrode disposed on the piezoelectric substrate to detect a specific detection object on the basis of a change in output signal. At least a portion of the comb shaped electrode is electrically conductive and is made of a sensitive material which responds to the above-described specific detection object.06-09-2011
20090096319SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a base substrate, first and surface acoustic wave filters mounted on a surface of the base substrate, and a sealer provided on the surface of the base substrate and covering the first and second surface acoustic wave filters. The first and second surface acoustic wave filters include first and second piezoelectric substrates. The second piezoelectric substrate is located away from the first piezoelectric substrate via a gap. This surface acoustic wave device reduces inter-modulation.04-16-2009
20100102668LAMB WAVE TYPE ELASTIC WAVE DEVICE - Provided is a device of a high-frequency resonator using Lamb wave type elastic wave having excellent frequency temperature characteristics, the device having a significantly small frequency change.04-29-2010
20100141086Surface acoustic wave devices - A surface acoustic wave device has a supporting substrate 06-10-2010
20090174284BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a piezoelectric substance made of LiNbO07-09-2009
20120068573SURFACE ACOUSTIC WAVE DEVICE, ELECTRONIC APPARATUS, AND SENSOR APPARATUS - A SAW device includes an IDT which is provided on the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between electrode fingers of the IDT. An IDT line occupancy η and an inter-electrode-finger groove depth G satisfy a predetermined relationship in terms of the wavelength λ, such that the SAW device has a frequency-temperature characteristic of a cubic curve having an inflection point between a maximum value and a minimum value in an operation temperature range. The inflection point is adjustable to a desired temperature or a desired temperature range depending on the IDT line occupancy η within an operation temperature range.03-22-2012
20090085429SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO04-02-2009
20090230816SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave resonator includes a rotated Y-cut quartz substrate with a cut angle θ of about −53° to about −52° and an IDT electrode made of aluminum or an alloy primarily including aluminum provided on the quartz substrate. The propagation direction of surface acoustic waves is within a range of about 90°±5° with respect to the X axis. A SiO09-17-2009
20120194032SURFACE ACOUSTIC WAVE DEVICE - An inexpensive surface acoustic wave device that increases an acoustic velocity of a surface acoustic wave and an electromechanical coupling coefficient includes a piezoelectric substrate in which a LiNbO08-02-2012
20100001617Surface acoustic wave device and electronic apparatus - A surface acoustic wave device includes: a quartz substrate; and at least a single-type IDT electrode provided on a surface of the quartz substrate for exciting a Rayleigh surface acoustic wave in the upper limit mode of the surface acoustic wave stop band with the following relationships satisfied; 01-07-2010
20090115287BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device efficiently traps the vibrational energy of boundary acoustic waves and exhibits a high electromechanical coupling coefficient, and is consequently not affected by higher-order modes. The boundary acoustic wave device includes a first medium having piezoelectric characteristics, a non-electroconductive second medium, and a third medium through which slow transverse waves propagate at a lower acoustic velocity than slow transverse waves propagating through the first and second media. The first medium, the third medium, and the second medium are stacked in that order. An IDT is disposed between the first medium and the third medium. The IDT includes a metal layer made of a metal having a density ρ in the range of about 3000 kg/m05-07-2009
20110037343Elastic Wave Device - In a boundary elastic wave resonator formed with a cross finger type transducer (IDT) of a wave length λ of a boundary elastic wave, a silicon oxide film, and an aluminum nitride film above a surface of a θYX-LN single-crystal piezoelectric substrate having a predetermined cut angle θ, a film thickness h02-17-2011
20100320866BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a LiNbO12-23-2010
20120032554TRANSDUCER HAVING NATURAL UNIDIRECTIONALITY FOR SURFACE ACOUSTIC WAVES - The invention relates to a transducer having natural unidirectionality for surface acoustic waves, wherein an interdigital electrode structure is arranged on a piezoelectric crystal substrate and is constructed with interdigital transducers comprising collecting electrodes and fingers, wherein at least two of the fingers form a transducer cell, which comprises at least one excitation center for exciting an electrical potential wave and at least one reflection center for reflecting electrical potential waves. The invention is based on the problem of finding materials, material sections, and propagation directions for transducers having natural unidirectionality that result in a low insertion loss even in broadband transducers, and for which the frequency position is not affected or is affected only slightly by errors in the orientation of the electrode structure on the substrate despite the unidirectional characteristics of the transducers. According to an essential characteristic of the invention, the fingers are oriented perpendicularly to a direction R, wherein the direction R is directed parallel to a 1- or 3-fold rotational axis of the substrate crystal and the derivative dv/dθ=0 applies to R, wherein v is the phase velocity of the surface wave and θ is an angular deviation of the perpendicular to the finger direction from the direction R. According to a further characteristic of the invention, the electrode materials and the layer thicknesses thereof are selected in such a way that the phase shift Φs between the excitation center and a reflection center in each transducer cell, given by the equation sin02-09-2012
20100225201Electroacoustic Component - An electroacoustic component that includes a substrate made of monocrystalline LiNbO09-09-2010
20090051244Surface Acoustic Wave (SAW) Device02-26-2009
20120062070SURFACE ACOUSTIC WAVE DEVICE, ELECTRONIC APPARATUS, AND SENSOR APPARATUS - A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦42°, ψ) and excites a SAW in a stopband upper end mode. Inter-electrode-finger grooves 03-15-2012
20120062069SURFACE ACOUSTIC WAVE DEVICE, ELECTRONIC APPARATUS, AND SENSOR APPARATUS - A SAW device has an IDT which is provided on the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79≦|ψ|≦49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. A first direction (X′ axis) perpendicular to the electrode fingers and the conductor strips intersects the electrical axis (X axis) of the quartz crystal substrate at an angle ψ. At least a part of the IDT and the reflectors are arranged in a second direction intersecting the first direction at an angle α of 1.0°≦α≦2.75°. An excellent frequency-temperature characteristic and a high Q value in an operation temperature range are realized simultaneously.03-15-2012
20100187947ACOUSTIC WAVE DEVICE - An acoustic wave device having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate made of LiNbO07-29-2010
20100289379SURFACE ACOUSTIC WAVE (SAW) DEVICE - [Problem] In a SAW device using a SH-wave type surface acoustic wave, obtain a means to improve the Q factor.11-18-2010
20120176001SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a piezoelectric substrate including an R-plane, a-plane, or m-plane sapphire substrate and a LiNbO07-12-2012
20120074809SURFACE ACOUSTIC WAVE SENSOR - A surface acoustic wave sensor that achieves increased detection sensitivity includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, and a protection layer arranged on the piezoelectric substrate so as to cover the IDT electrode. The surface acoustic wave sensor is arranged so as to be excited by the IDT electrode in a high-order mode of an SH wave in which displacement at a surface of the protection layer and displacement near a boundary between the piezoelectric substrate and the IDT electrode have opposite directions, and the maximum displacement occurs at the surface of the protection layer.03-29-2012
20120223616Surface Acoustic Wave Resonator - According to embodiments of the present invention, a surface acoustic wave resonator is provided. The surface acoustic wave resonator includes: a first electrode and a second electrode arranged in a first layer; a piezoelectric material formed in a second layer adjacent to the first layer; wherein the piezoelectric material is electrically coupled to the first electrode and the second electrode; and wherein the first layer is free of the09-06-2012
20080303378SURFACE ACOUSTIC WAVE (SAW) DEVICES BASED ON CUBIC BORON NITRIDE/DIAMOND COMPOSITE STRUCTURES - A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp12-11-2008
20110266917Guided Bulk Acoustic Wave Device Having Reduced Height and Method for Manufacturing - Guided bulk acoustic wave devices and method for manufacturing guided bulk acoustic wave devices are provided. A guided bulk acoustic wave device includes a resonator structure with a piezoelectric layer, an electrode layer for exciting guided bulk acoustic waves and a wave guide layer. The thickness of the piezoelectric layer is less than or equal to 50 μm.11-03-2011
20100314967SURFACE ACOUSTIC WAVE SENSOR DEVICE - Provided herein is a surface acoustic wave (SAW) sensor device including a surface acoustic wave sensor and an oscillator corresponding to the surface acoustic wave sensor. A horizontal plane defined by the oscillator is inclined at a predetermined angle with respect to a horizontal plane defined by the surface acoustic wave sensor. The predetermined angle is greater than zero degrees.12-16-2010
20120086308Surface acoustic wave device, electronic apparatus, and sensor apparatus - A SAW device has an IDT which is provided in the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT. The depth G of the inter-electrode-finger grooves is 0.01λ≦G≦0.07λ, and an electrode finger thickness H and an IDT line occupancy η satisfy a predetermined relationship. Thus, a frequency-temperature characteristic constantly has an inflection point between a maximum value and a minimum value in an operation temperature range, thereby suppressing a fluctuation in an inflection-point temperature due to a manufacturing variation in the IDT line occupancy η.04-12-2012
20130026881ACOUSTIC WAVE ELEMENT - An IDT electrode includes a first electrode layer mainly made of Mo disposed above the piezoelectric body and a second electrode layer mainly made of Al disposed above the first electrode layer. The IDT electrode has a total thickness not more than 0.15λ. The first electrode layer has a thickness not less than 0.05λ. The second electrode layer has a thickness not less than 0.025λ.01-31-2013
20100109475SURFACE ACOUSTIC WAVE ELEMENT, SURFACE ACOUSTIC WAVE DEVICE AND METHODS FOR MANUFACTURING THE SAME - A surface acoustic wave (“SAW”) element includes a substrate which is formed of a piezoelectric material, a plurality of first electrodes which are disposed on the substrate and separated from each other, a plurality of second electrodes which are disposed on the substrate and are separated from the first electrodes and are separated from each other, and oxide films which are disposed on the respective plurality of first electrodes and the plurality of second electrodes.05-06-2010
20080309192ACOUSTIC WAVE RESONATOR - In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.12-18-2008
20120194033ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME - An acoustic wave device includes a piezoelectric substrate, interdigitated electrodes formed on the piezoelectric substrate, and an insulation film that is formed on a surface of the interdigitated electrodes by atomic layer deposition and includes aluminum oxide.08-02-2012
20090160290ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME - An acoustic wave device includes a substrate, an acoustic wave element, an electrode pad, a resin portion and a metal post. The acoustic wave element is provided on the substrate. The electrode pad is provided on the substrate, is electrically coupled to the acoustic wave element, and has an Au layer and an adhesive layer formed on the Au layer and having an opening. The resin portion is provided on the substrate so as to cover the acoustic wave element and the electrode pad, and has a through-hole formed to expose a surface of the electrode pad. The metal post is provided in the through-hole and contacts with the Au layer through the opening of the adhesive layer. The adhesive layer is provided between the Au layer and the resin portion.06-25-2009
20120104897SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.05-03-2012
20100187948Protected resonator - A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.07-29-2010
20100277037Surface Acoustic Wave Device and Method of Manufacturing the Same - A surface acoustic wave device excellent in reliability and a method of manufacturing the same are provided. The surface acoustic wave device comprises a piezoelectric substrate (11-04-2010
20100219717ACOUSTIC WAVE DEVICE - An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.09-02-2010
20100127597ACOUSTIC BOUNDARY WAVE DEVICE AND ELECTRONIC APPARATUS USING THE SAME - An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.05-27-2010
20090267447ACOUSTIC WAVE DEVICE - An acoustic wave device includes a piezoelectric substrate having a surface adapted to allow leaky surface wave to propagate thereon, an interdigital electrode provided on a portion of the surface of the piezoelectric substrate, and a dielectric layer provided on the surface of the piezoelectric substrate to cover the interdigital electrode. The piezoelectric substrate is made of lithium niobate. The dielectric layer is made of tantalum pentoxide. The piezoelectric substrate is made of a rotated Y-cut substrate having a cut angle which is not smaller than 2.5 degrees and is not larger than 22.5 degrees. A ratio H/λ of a film thickness H of the dielectric layer to a wavelength λ of a center frequency of the leaky surface wave ranges from 0.034 to 0.126. This acoustic wave device works in a wide band width.10-29-2009
20120133246BOUNDARY ACOUSTIC WAVE DEVICE - Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.05-31-2012
20110254406BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device that has a three-medium structure and that prevents a high-order mode spurious response includes a piezoelectric substrate, a first dielectric layer laminated on the piezoelectric substrate, a second dielectric layer laminated on the first dielectric layer, and an IDT electrode provided at an interface between the piezoelectric substrate and the first dielectric layer. The boundary acoustic wave device utilizes a Stoneley wave that propagates along the interface. Where V10-20-2011
20100148626ACOUSTIC WAVE DEVICE, COMMUNICATION MODULE, AND COMMUNICATION APPARATUS - An acoustic wave device of the present application includes a piezoelectric substrate (06-17-2010
20100060103SURFACE ACOUSTIC WAVE RESONATOR - A surface acoustic wave resonator of the present invention includes a piezoelectric substrate (03-11-2010
20110068656SURFACE ACOUSTIC WAVE SENSOR SYSTEM - A surface acoustic wave sensor system includes a base substrate, a piezoelectric substrate disposed on the base substrate, inter-digital transducer (IDT) electrodes disposed along a longitudinal direction on the piezoelectric substrate, each IDT electrode including an input inter-digital transducer and an output inter-digital transducer paired with and facing the input inter-digital transducer, each pair of input and output IDTs forming a surface acoustic wave unit sensor with the piezoelectric substrate, and connection electrodes disposed in the base substrate and electrically connected to the surface acoustic wave unit sensors.03-24-2011
20110109196PLATE WAVE ELEMENT AND ELECTRONIC EQUIPMENT USING SAME - A plate wave element includes a piezoelectric body, a comb-shaped electrode disposed on an upper surface of the piezoelectric body, and a medium layer disposed on the upper surface of the piezoelectric body so as to cover the comb-shaped electrode. The comb-shaped electrode excites a Lamb wave as a main wave. The medium layer has a frequency temperature characteristic opposite to that of the piezoelectric body. The plate wave element has a preferable frequency temperature characteristic.05-12-2011
20120038244PIEZOELECTRIC VIBRATION DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF ADJUSTING RESONANT FREQUENCY - A method of manufacturing a piezoelectric vibration device having a surface acoustic wave element includes a step of forming a functional film adapted to increase a velocity of a wave on a surface of the surface acoustic wave element. Further, the Young's modulus of the functional film is higher than the Young's modulus of each of the excitation electrode and the piezoelectric body, and the density of the functional film is lower than the density of each of the excitation electrode and the piezoelectric body. Thus, it is possible to develop the frequency rise due to the elastic modulus rise while suppressing the influence of the frequency drop due to the mass attachment effect to thereby raise the resonant frequency of the surface acoustic wave element.02-16-2012
20110050034BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a first medium layer made of a first dielectric material and a second medium layer made of a second dielectric material having an acoustic velocity different from the acoustic velocity of the first dielectric material. The first medium layer and the second medium layer are disposed on a piezoelectric substrate, and an IDT electrode is arranged along the interface between the piezoelectric substrate and the first medium layer. When the fast transverse bulk wave of the piezoelectric substrate has an acoustic velocity V03-03-2011
20110156531ACOUSTIC WAVE DEVICE - An acoustic wave device includes a piezoelectric substrate and an IDT electrode disposed thereon. The IDT electrode includes a metal laminate. The metal laminate includes a first metal layer made of Al or an Al-based alloy, a second metal layer made of a metal or alloy different from that used in the first metal layer, a Cu layer, and a Ti layer. The Cu layer and the Ti layer are disposed between the first and second metal layers. The Cu layer is located on the first metal layer side.06-30-2011
20120313483ACOUSTIC WAVE DEVICE - An acoustic wave device includes a substrate, a dielectric film formed on the substrate and a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film. At least one of the substrate and the dielectric film is piezoelectric. The IDT electrodes each include an electrode finger that extends in at least one direction. A film thickness of the dielectric film changes in a gap portion between a tip of the electrode finger of one of the IDT electrodes and the other opposing IDT electrode in the direction of extension of the electrode finger.12-13-2012
20120161577Acoustic Wave Guide Device and Method for Minimizing Trimming Effects and Piston Mode Instabilities - An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.06-28-2012
20120262028BOUNDARY ACOUSTIC WAVE DEVICE - In a boundary acoustic wave device, a silicon oxide layer and a dielectric layer exhibiting a higher acoustic velocity than the silicon oxide layer are stacked on a LiTaO10-18-2012
20110037344BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a piezoelectric substrate made of single-crystalline LiTaO02-17-2011
20100231089SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF THE SAME SURFACE ACOUSTIC WAVE DEVICE - A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.09-16-2010
20100225202Acoustic Wave Device - Provided is a highly reliable acoustic wave device wherein deterioration of electrical characteristics due to deformation of a protective cover is suppressed. A method for manufacturing such acoustic wave device is also provided. The acoustic wave device has a piezoelectric substrate 09-09-2010
20120091855ATOMIC LAYER DEPOSITION ENCAPSULATION FOR ACOUSTIC WAVE DEVICES - Acoustic wave devices and methods of coating a protective film of alumina (Al04-19-2012
20130015744SAW FILTER HAVING PLANAR BARRIER LAYER AND METHOD OF MAKINGAANM Adkisson; James W.AACI JericoAAST VTAACO USAAGP Adkisson; James W. Jerico VT USAANM Candra; PanglijenAACI Essex JunctionAAST VTAACO USAAGP Candra; Panglijen Essex Junction VT USAANM Dunbar; Thomas J.AACI StamfordAAST CTAACO USAAGP Dunbar; Thomas J. Stamford CT USAANM Gambino; Jeffrey P.AACI WestfordAAST VTAACO USAAGP Gambino; Jeffrey P. Westford VT USAANM Jaffe; Mark D.AACI ShelburneAAST VTAACO USAAGP Jaffe; Mark D. Shelburne VT USAANM Stamper; Anthony K.AACI WillistonAAST VTAACO USAAGP Stamper; Anthony K. Williston VT USAANM Wolf; Randy L.AACI Essex JunctionAAST VTAACO USAAGP Wolf; Randy L. Essex Junction VT US - Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer.01-17-2013
20120274179BOUNDARY ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING SAME - In the boundary acoustic wave device, an IDT electrode, a first dielectric layer, and a second dielectric layer are provided on a piezoelectric substrate. The first dielectric layer is made of a deposited film. A thickness of the IDT electrode is about 10% or more of λ. A difference between a height of the first dielectric layer, measured from an upper surface of the piezoelectric substrate, above a center of an electrode finger of the IDT electrode and a height of the first dielectric layer, measured from the upper surface of the piezoelectric substrate, above a center of a gap between adjacent electrode fingers, i.e., a magnitude of unevenness in an upper surface of the first dielectric layer, is about 5% or less of λ.11-01-2012
20110309719SURFACE ACOUSTIC WAVE ELEMENT AND METHOD OF MANUFACTURING SAME - A surface acoustic wave element has a small energy loss and when it is used in a filter device, suppresses a spurious component occurring near the resonant frequency of a principal response and improves the frequency characteristic near the pass band of the filter device. The surface acoustic wave element includes a piezoelectric substrate, a comb-shaped electrode, and an insulating film. The comb-shaped electrode is disposed on the piezoelectric substrate. The insulating film is disposed so as to cover the piezoelectric substrate and the comb-shaped electrode. Where λ is the wavelength of an elastic wave that propagates in the piezoelectric substrate and h is the difference between the maximum and minimum values of a thickness dimension from the top surface of the piezoelectric substrate to the top surface of the insulating film, 0.01≦h/λ≦0.03 is satisfied.12-22-2011
20120019102ELASTIC WAVE ELEMENT AND ELECTRONIC APPARATUS USING SAME - An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,01-26-2012
20120019101ELASTIC WAVE DEVICE - An elastic wave device that achieves an improved frequency-temperature characteristic and a sufficiently reduced spurious component includes a piezoelectric body including a LiNbO01-26-2012
20130026882SURFACE ACOUSTIC WAVE SENSOR - In a SAW device, a first area placed at a surface of a measurement subject directly under a propagation portion is fixed to the measurement subject, and a second area placed at the surface of the measurement subject directly under both a drive electrode and a reflector is not fixed to the measurement subject. When a strain is generated in the measurement subject, a strain is generated only in the propagation portion, and a phase change is generated in a surface acoustic wave reflected by the reflector. Because the phase change is hardly affected by a temperature change, the strain of the measurement subject can be measured based on the phase change. Because a resonant frequency of the SAW device is changed by the temperature change, but is not affected by the strain of the measurement subject, a temperature can be measured based on a resonant frequency change.01-31-2013
20130057113ELASTIC WAVE DEVICE - In an elastic wave device that significantly reduces and prevents deterioration of a frequency characteristic without roughening an undersurface of a piezoelectric substrate, a structure is bonded to a surface of a piezoelectric substrate other than a main surface of the piezoelectric substrate on which IDTs are located. The structure is provided so that a path difference is defined between a first component and a second component of a bulk wave that is excited by the IDT and propagates in the piezoelectric substrate toward the bonding surface. The first component of the bulk wave is reflected from the bonding surface. The second component of the bulk wave enters the structure from the bonding surface, propagates in the structure, enters the piezoelectric substrate from the bonding surface, and propagates in the same direction as that of the first component reflected from the bonding surface in the piezoelectric substrate.03-07-2013
20110278985SURFACE ACOUSTIC WAVE RESONATOR WITH AN OPEN CIRCUIT GRATING FOR HIGH TEMPERATURE ENVIRONMENTS - Surface acoustic wave resonators for use in high temperature applications including a piezoelectric substrate, at least one interdigital transducer supported by the piezoelectric substrate, and a grating reflector supported by the piezoelectric substrate, the grating reflector being fabricated of a heavy metal and comprising a plurality of electrodes, at least one electrode of the plurality of electrodes being electrically isolated from at least one other electrode. Methods of making surface acoustic wave resonators are also included.11-17-2011
20100102669SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE DEVICE - A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum.04-29-2010
20100141087SURFACE ACOUSTIC WAVE BASED SENSOR APPARATUS AND METHOD UTILIZING SEMI-SYNCHRONOUS SAW RESONATORS - A SAW based sensor apparatus utilizing semi-synchronous SAW resonator having a single resonance at Bragg frequency with very high quality factor is disclosed. The semi-synchronous SAW resonator includes at least one inter-digital transducer, which generates and receives surface acoustic wave and a number of grating reflectors, which reflect the surface acoustic wave and generate a standing wave between the reflectors, The interdigital transducer and the grating reflectors can be fabricated on a substrate (e.g., quartz) by photolithographic process. The resonance condition is independent of transducer directivity and reflection coefficient per finger. Such a SAW based sensor apparatus having three semi-synchronous SAW resonators can be utilized for measuring pressure and temperature for a wireless tire-pressure monitoring system.06-10-2010
20090085430COMPENSATION OF RESONATORS FOR SUBSTRATE AND TRANSDUCER ASSYMETRY - An in-line SAW resonator employs an asymmetric adjustment of the Bragg frequencies of the left outer reflector and right outer reflector where the degree of periodicity shift and the relative direction of the frequency shift are calculated to move the peaks of the acoustic standing wave trapped between the gratings to coincide with the optimized centers of transduction of one or more interdigital transducers (IDTs) without the need for undesirable breaks in the periodicity or the use of reflectionless IDTs.04-02-2009
20090212659ELASTIC BOUNDARY WAVE DEVICE - An elastic boundary wave device includes a first medium with piezoelectricity, an electrode exciting an elastic wave and provided on the first medium, a second medium made of a different material from the first medium and provided on the first medium to cover the electrode, and a sound absorbing portion provided on the second medium.08-27-2009
20100237742LAMB-WAVE RESONATOR AND OSCILLATOR - A Lamb-wave resonator includes a piezoelectric substrate, and an IDT electrode disposed on one principal surface of the piezoelectric substrate. The IDT electrode has bus bar electrodes connecting sends of a plurality of electrode finger elements. The plurality of electrode finger elements being interdigitated with each other to form an apposition area. The IDT electrode includes a pair of reflectors disposed on the one principal surface of the piezoelectric substrate, and respectively arranged on both sides of the IDT electrode in a propagation direction of a Lamb wave.09-23-2010
20120242190SAW SENSOR - Provided is a surface acoustic wave (SAW) sensor sensing pressure, temperature, etc., by using a SAW. The SAW sensor includes: a substrate having one of its surfaces formed with a cavity having a predetermined depth; a piezoelectric plate which has piezoelectricity, so as to make a SAW, and which is adhered to the surface in which the cavity is formed, so as to cover the cavity of the substrate; a pressure resonator which is installed to a portion of the piezoelectric plate that corresponds to the cavity groove, and which generates a SAW due to a radio frequency (RF) signal applied thereto; and a reference resonator which is installed to the piezoelectric plate to be outside the portion corresponding to the cavity and be parallel to the pressure resonator, and which generates a SAW due to the RF signal applied thereto.09-27-2012
20080252171Surface Acoustic Wave Motor - In an energy recovery type surface acoustic wave motor, an increase in energy efficiency at the time of energy recovery and supply is achieved by adjusting phase change. A surface acoustic wave motor comprises: a surface acoustic wave substrate; a slider provided with an applied pressure; a driving interdigital electrode connected to an external power supply for generating a driving surface acoustic wave on a surface so as to drive the slider by a frictional force which is generated on a contact surface of the slider with the surface acoustic wave substrate based on the surface acoustic wave and the applied pressure; recovery interdigital electrodes placed forward and backward in the direction of travel of the surface acoustic wave for recovering energy of a surface acoustic wave unused to drive the slider, and for using that energy to generate a surface acoustic wave; and phase adjusting means for matching the phase of a surface acoustic wave generated by the recovery interdigital electrodes to the phase of the driving surface acoustic wave W generated by the driving interdigital electrode.10-16-2008
20100289380Surface Wave Resonator Having Reduced Parasitic Resonance - The invention relates to a surface acoustic wave resonator produced on a cut substrate with propagation axes for which a nonzero directivity exists and comprising at least one central transducer (Tc) exhibiting a central axis, a first array of reflectors (R11-18-2010
20100052472ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT - A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.03-04-2010
20090021108Surface Acoustic Wave (Saw) Device, Module and Oscillator - [Problem] In a SAW device using a quartz crystal substrate, prevent the deterioration of Q factor due to the difference in the peak frequency between the radiation conductance of an IDT and the reflection coefficient of a reflector.01-22-2009
20120080979SURFACE ACOUSTIC WAVE COMPONENT - A surface wave component contains at least two interdigital transducers having natural unidirectionality, disposed on a piezoelectric crystal substrate, which form a transducer pair consisting of transmission transducer and reception transducer. The transducers consist of an interdigital electrode structure having prongs and bus bars, and have opposite forward directions. At least two of the prongs form a transducer cell that has at least one excitation center for exciting an electrical potential wave and at least one reflection center for reflection of electrical potential waves, The transducer cells consist of two prongs having the same width, having a distance between the prong centers equal to half the length of a transducer period, whereby the electrode structures of the two transducers consist of the same material, but have different layer thicknesses.04-05-2012

Patent applications in class Interdigitated electrodes

Patent applications in all subclasses Interdigitated electrodes