Class / Patent application number | Description | Number of patent applications / Date published |
257728000 | For high frequency (e.g., microwave) device | 12 |
20080203561 | HIGH FREQUENCY DEVICE MODULE AND MANUFACTURING METHOD THEREOF - A high frequency device module of an embodiment of a current invention includes: an insulation substrate in which electrodes are provided on the front surface thereof and a grounding substrate is provided on the rear surface thereof; a high frequency device provided on the insulation substrate with a terminal of the device connected to the electrodes; potting material for covering the high frequency device; and a metallic layer provided on the potting material and connected to the grounding substrate. | 08-28-2008 |
20090008774 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular. | 01-08-2009 |
20090014867 | SEAL RING FOR GLASS WALL MICROELECTRONICS PACKAGE - A seal ring formed from a conductive material has at least one recessed area formed on an internal or external surface which is dimensioned to permit attachment of a wire bond so that the wire and any attachment material remain recessed from the upper and lower contact surfaces of the seal ring, allowing the seal ring to make flat and even contact with the adjacent package layer so that a hermetic seal is formed. | 01-15-2009 |
20090085200 | LOW LOSS RADIO FREQUENCY SIGNAL COMMUNICATION WITHIN A PACKAGE, A BOARD AND/OR A WAVE GUIDE - In some embodiments an integrated circuit package includes a coaxial arrangement of one or more ground via surrounding a signal via. The one or more ground via and the signal via extend through the package to allow transmission of signals between an integrated circuit and a board. Other embodiments are described and claimed. | 04-02-2009 |
20090206473 | System and Method for Integrated Waveguide Packaging - A millimeter wave system or package may include at least one printed wiring board (PWB), at least one integrated waveguide interface, and at least one monolithic microwave integrated circuit (MMIC). The package may be assembled in panel form incorporating parallel manufacturing techniques. | 08-20-2009 |
20090206474 | ELECTRICAL DEVICE AND METHOD OF MANUFACTURING ELECTRICAL DEVICES USING FILM EMBOSSING TECHNIQUES TO EMBED INTEGRATED CIRCUITS INTO FILM - An electrical device and method of making same is provided wherein a chip or other electrical component is embedded in a substrate. The substrate may be a thermoplastic material capable of deforming around the chip and at least partially encasing the chip when heat and/or pressure is applied to the substrate. Electromagnetic radiation such a near infrared radiation can be used to heat the substrate. The substrate may include a compressible layer that can be compressed and/or crushed to form a recess into which the chip can be inserted. Once embedded, the chip or electrical component is secured by the substrate and may be coupled to another electrical component. A method of making an RFID transponder is also provided wherein an RFID chip is embedded in a substrate using heat and/or pressure, an antenna structure is applied to the substrate, and the RFID chip and antenna structure are coupled together. | 08-20-2009 |
20090236737 | RF TRANSISTOR OUTPUT IMPEDANCE TECHNIQUE FOR IMPROVED EFFICIENCY, OUTPUT POWER, AND BANDWIDTH - An RF/microwave circuit is configured to eliminate the physical constraint that requires a sacrifice of one output series inductor wirebond for each shunt inductor wirebond. The circuit employs a multi-level metalized substrate as part of its output impedance matching network. The lower level of the multi-level substrate serves as an intermediate connection point for the output series inductor wirebonds as it extends from the output terminal of an active device to an output metallization pad. The upper level of the multi-level substrate serves to support a DC block capacitor and as an intermediate connection point for the shunt inductor wirebonds. The multi-level substrate allows the series inductor wirebonds to be positioned at a lower height, and the shunt inductor wirebonds at a greater height. Because they are at different heights, the physical constraint of sacrificing a series wirebond per a shunt inductor wirebond can be eliminated. This leads to improved power efficiency, higher gain, and greater bandwidth. | 09-24-2009 |
20100038775 | MINIATURE ELECTRONIC COMPONENT FOR MICROWAVE APPLICATIONS - The invention relates to a miniature microwave component having: a microwave chip ( | 02-18-2010 |
20100038776 | MINIATURE MICROWAVE PACKAGE AND PROCESS FOR FABRICATING THE PACKAGE - The invention relates to a miniature microwave package comprising a microwave chip ( | 02-18-2010 |
20100102443 | HIGH-FREQUENCY SEMICONDUCTOR DEVICE - An example of a high-frequency semiconductor device includes two unit semiconductor devices. Each of the two unit semiconductor devices has a ground substrate, a high-frequency semiconductor element, an input-side matching circuit, an output-side matching circuit, a side wall member, an input terminal, and an output terminal. The ground substrate has heat-radiating property. The high-frequency semiconductor element is provided on the ground substrate. The input-side matching circuit is connected to the high-frequency semiconductor element. The output-side matching circuit is connected to the high-frequency semiconductor element. The side wall member surrounds at least the high-frequency semiconductor element. The input terminal is connected to the input-side matching circuit. The output terminal is connected to the output-side matching circuit. The two unit semiconductor devices are coupled to each other at upper edges of the side wall members. | 04-29-2010 |
20110074012 | Substrate with built-in semiconductor element, and method of fabricating substrate with built-in semiconductor element - There is provided a substrate with a built-in semiconductor element, including: a first substrate at which a wiring layer is layered on a dielectric layer; a semiconductor element that is structured to include a distributed constant circuit, and at which plural bonding pads are formed at a peripheral region of a surface that faces the first substrate, and that is electrically connected to the wiring layer by an electrically-conductive member that has electrical conductivity and corresponds to the plural bonding pads; a supporting member that is disposed at an inner side region that is further toward an inner side than the peripheral region of the semiconductor element, and that is interposed between the semiconductor element and the first substrate and supports the semiconductor element; and a second substrate that is laminated to the first substrate and the semiconductor element. | 03-31-2011 |
20120139099 | SYSTEM AND METHOD FOR INTEGRATED WAVEGUIDE PACKAGING - A millimeter wave integrated waveguide interface package device may comprise: (1) a package comprising a printed wiring board (PWB) and a monolithic microwave integrate circuit (MMIC), wherein the MMIC is in communication with the PWB; and (2) a waveguide interface integrated with the package. The package may be adapted to operate at high frequency and high power, where high frequency includes frequencies greater than about 5 GHz, and high power includes power greater than about 0.5 W. | 06-07-2012 |