Class / Patent application number | Description | Number of patent applications / Date published |
257708000 | Entirely of metal except for feedthrough | 11 |
20080246141 | SEMICONDUCTOR DEVICE - A frame-shaped sidewall is provided on a metallic base plate surrounding a semiconductor element arranged on the metallic base plate, which is provided with a stepped surface positioned at lower level at a portion of the base plate than a main surface of the base plate. A first dielectric plate is arranged on one side of the semiconductor element and a first circuit pattern is formed on its surface, a second dielectric plate is arranged on another side of the semiconductor element and a second circuit pattern is formed on the first and the second dielectric plate. An insulator is mounted on the stepped surface of the base plate, which forms a part of the sidewall. Power supply portions are provided including a band-shaped conductor. An interconnection is provided which connects the band-shaped conductor to the circuit pattern. | 10-09-2008 |
20090001554 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer arranged over the carrier and a first semiconductor chip arranged over the electrically insulating layer, wherein the first semiconductor chip has a first contact element on a first surface and a second contact element on a second surface. | 01-01-2009 |
20090001555 | SEMICONDUCTOR DEVICE HAVING METAL CAP - In order to reduce a thermal stress applied by a metal cap to a semiconductor chip: a semiconductor chip ( | 01-01-2009 |
20090146291 | SEMICONDUCTOR PACKAGES - A semiconductor package includes a semiconductor chip including a semiconductor substrate and a plurality of cell transistors arranged on the semiconductor substrate. Channel regions of the cell transistors have channel lengths that extend in a first direction, and the package further includes a supporting substrate having an upper surface on which the semiconductor chip is affixed. The supporting substrate is configured to bend in response to a temperature increase in a manner that applies a tensile stress to the channel regions of the semiconductor chip in the first direction. Related methods are also disclosed. | 06-11-2009 |
20100200983 | ELECTRONIC COMPONENT - An electronic component has a board, a semiconductor element mounted on an upper surface of the board, a ground electrode formed in a region surrounding the semiconductor element on the upper surface of the board, a conductive cap that overlaps the board such that the semiconductor element is covered therewith, and a conductive joining member that joins a whole periphery of a lower surface of the conductive cap to the ground electrode. The conductive cap includes a pressing portion on the lower surface thereof The lower surface of the conductive cap and the ground electrode are joined by the conductive joining member on an outer peripheral side of the pressing portion. | 08-12-2010 |
20120126391 | Methods for Embedding Conducting Material and Devices Resulting from Said Methods - Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure. | 05-24-2012 |
20120228756 | SEMICONDUCTOR HOUSING AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR HOUSING - A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body. | 09-13-2012 |
257709000 | With specified insulator to isolate device from housing | 2 |
20110037164 | THREE-DIMENSIONAL PACKAGE MODULE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING PASSIVE DEVICE APPLIED TO THE THREE-DIMENSIONAL PACKAGE MODULE - Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer. | 02-17-2011 |
20160172259 | CUSTOMIZED MODULE LID | 06-16-2016 |
257710000 | With specified means (e.g., lip) to seal base to cap | 2 |
20090267223 | MEMS Package Having Formed Metal Lid - A hermetic MEMS device ( | 10-29-2009 |
20140332947 | PACKAGES AND METHODS FOR PACKAGING - Packaged integrated devices and methods of forming the same are provided. In one embodiment, a packaged integrated device includes a package substrate, a package lid, and an integrated circuit or microelectromechanical systems (MEMS) device. The package lid is mounted to a first surface of the package substrate using an epoxy, and the package lid and the package substrate define a package interior. The package lid includes an interior coating suited to good adhesion with the epoxy, and an exterior coating suited to RF shielding, where the materials of the interior and exterior coatings are different. In one example, the interior lid coating is nickel whereas the exterior lid coating is tin. | 11-13-2014 |