Class / Patent application number | Description | Number of patent applications / Date published |
257609000 | For compound semiconductor (e.g., deep level dopant) | 11 |
20090039469 | Low temperature impurity doping of silicon carbide - The method described herein enables the introduction of external impurities into Silicon Carbide (SiC) to be conducted at a temperature between 1150-1400° C. Advantages include: a) low temperature diffusion procedure with greater control of the doping process, b) prevent roughness of SiC surface, c) less surface defects and d) better device performance and higher yield. The method described herein involves depositing a ceramic layer that contains the desired impurity and a certain element such as oxygen (in the form of oxide), or other elements/compounds that draw out the silicon and carbon atoms from the surface region of the SiC leaving behind carbon and silicon vacancies which then allow the external impurity to diffuse into the SiC more easily. In another embodiment, the deposited layer also has carbon atoms that discourage carbon from escaping from the SiC, thus generating a surface region of excess carbon in addition to the silicon vacancies. | 02-12-2009 |
20090108407 | Oxygen-doped n-type gallium nitride freestanding single crystal substrate - Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. | 04-30-2009 |
20090166806 | EPITAXIAL SEMICONDUCTOR LAYER AND METHOD - A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface. | 07-02-2009 |
20090230513 | COMPOUND SEMICONDUCTOR SUBSTRATE AND CONTROL FOR ELECTRICAL PROPERTY THEREOF - There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded. | 09-17-2009 |
20100025822 | GERMANIUM ON INSULATOR (GOI) SEMICONDUCTOR SUBSTRATES - Germanium on insulator (GOI) semiconductor substrates are generally described. In one example, a GOI semiconductor substrate comprises a semiconductor substrate comprising an insulative surface region wherein a concentration of dopant in the insulative surface region is less than a concentration of dopant in the semiconductor substrate outside of the insulative surface region and a thin film of germanium coupled to the insulative surface region of the semiconductor substrate wherein the thin film of germanium and the insulative surface region are simultaneously formed by oxidation anneal of a thin film of silicon germanium (Si | 02-04-2010 |
20110084363 | Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them - A compound semiconductor substrate | 04-14-2011 |
20120299155 | METHOD FOR FORMING FULLY RELAXED SILICON GERMANIUM ON SILICON - Semiconductor devices are formed with a thin layer of fully strain relaxed epitaxial silicon germanium on a substrate. Embodiments include forming a silicon germanium (SiGe) epitaxial layer on a semiconductor substrate, implanting a dopant into the SiGe epitaxial layer, and annealing the implanted SiGe epitaxial layer. | 11-29-2012 |
20140001603 | Integrated Circuit Structures Containing a Strain- Compensated Compound Semiconductor Layer and Methods and System Related Thereto | 01-02-2014 |
20140284768 | SEMICONDUCTOR ON INSULATOR STRUCTURE WITH IMPROVED ELECTRICAL CHARACTERISTICS - A semiconductor structure comprising a first semiconductor layer, a bulk semiconductor layer, an insulation layer between the first semiconductor layer and the bulk semiconductor layer, a first implanted region that is at least partially within the insulation layer; and a second doped region that is at least partially within the bulk semiconductor layer, wherein the first implanted region has an implant profile that shows a maximum within the insulation layer and a tail extending within the bulk semiconductor layer so as to inhibit the diffusion of a second doping material of the second doped region within the insulation layer. | 09-25-2014 |
20140346638 | Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof - The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×10 | 11-27-2014 |
20160254150 | SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE | 09-01-2016 |