Class / Patent application number | Description | Number of patent applications / Date published |
257483000 | With means to prevent edge breakdown | 32 |
20090236679 | Schottky Diode Structures Having Deep Wells for Improving Breakdown Voltages - An integrated circuit structure includes a semiconductor substrate; a well region of a first conductivity type over the semiconductor substrate; a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barrier; an isolation region encircling the metal-containing layer; and a deep-well region of a second conductivity type opposite the first conductivity type under the metal-containing layer. The deep-well region has at least a portion vertically overlapping a portion of the metal-containing layer. The deep-well region is vertically spaced apart from the isolation region and the metal-containing layer by the well region. | 09-24-2009 |
20130015550 | JUNCTION BARRIER SCHOTTKY DIODE WITH ENFORCED UPPER CONTACT STRUCTURE AND METHOD FOR ROBUST PACKAGINGAANM Bhalla; AnupAACI Santa ClaraAAST CAAACO USAAGP Bhalla; Anup Santa Clara CA USAANM Pan; JiAACI San JoseAAST CAAACO USAAGP Pan; Ji San Jose CA USAANM Ng; DanielAACI CampbellAAST CAAACO USAAGP Ng; Daniel Campbell CA US - A semiconductor junction barrier Schottky (JBS-SKY) diode with enforced upper contact structure (EUCS) is disclosed. Referencing an X-Y-Z coordinate, the JBS-SKY diode has semiconductor substrate (SCST) parallel to X-Y plane. Active device zone (ACDZ) atop SCST and having a JBS-SKY diode with Z-direction current flow. Peripheral guarding zone (PRGZ) atop SCST and surrounding the ACDZ. The ACDZ has active lower semiconductor structure (ALSS) and enforced active upper contact structure (EUCS) atop ALSS. The EUC has top contact metal (TPCM) extending downwards and in electrical conduction with bottom of EUCS; and embedded bottom supporting structure (EBSS) inside TPCM and made of a hard material, the EBSS extending downwards till bottom of the EUCS. Upon encountering bonding force onto TPCM during packaging of the JBS-SKY diode, the EBSS enforces the EUCS against an otherwise potential micro cracking of the TPCM degrading the leakage current of the JBS-SKY diode. | 01-17-2013 |
20140312452 | SEMICONDUCTOR DEVICE AND TERMINATION REGION STRUCTURE THEREOF - A termination region structure of a semiconductor device is provided, which includes: a semiconductor layer; a plurality of trenches, formed on a surface of the semiconductor layer; a connecting trench, formed on the surface of the semiconductor layer, for connecting two adjacent trenches in the plurality of trenches; a first insulating layer, formed on surfaces of the plurality of trenches, the connecting trench, and the semiconductor layer; a conductive material, formed in the plurality of trenches and the connecting trench; a second insulating layer, covering part of a surface of the first insulating layer and part of a surface of the conductive material; and a metal layer, covering part of a surface of the second insulating layer. | 10-23-2014 |
20150028445 | HIGH-VOLTAGE TRENCH JUNCTION BARRIER SCHOTTKY DIODE - In a Schottky diode having an n | 01-29-2015 |
20160005810 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×10 | 01-07-2016 |
20160056306 | SEMICONDUCTOR DEVICE - A p-type anode layer ( | 02-25-2016 |
20160181442 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME | 06-23-2016 |
257484000 | Guard ring | 25 |
20080217725 | SCHOTTKY DIODE STRUCTURE WITH MULTI-PORTIONED GUARD RING AND METHOD OF MANUFACTURE - In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material. | 09-11-2008 |
20100164050 | ROBUST STRUCTURE FOR HVPW SCHOTTKY DIODE - A high-voltage Schottky diode including a deep P-well having a first width is fanned on the semiconductor substrate. A doped P-well is disposed over the deep P-well and has a second width that is less than the width of the deep P-well. An M-type guard ring is formed around the upper surface of the second doped well, A Schottky metal is disposed on an upper surface of the second doped well and the N-type guard ring. | 07-01-2010 |
20100258899 | SCHOTTKY DIODE DEVICE WITH AN EXTENDED GUARD RING AND FABRICATION METHOD THEREOF - A Schottky diode device includes a silicon substrate, an epitaxial silicon layer on the silicon substrate, an annular trench in a scribe line region that encompasses the epitaxial silicon layer, an insulation layer on interior sidewall of the annular trench, a silicide layer on the epitaxial silicon layer, a conductive layer on the silicide layer, and a guard ring in the epitaxial silicon layer, wherein the guard ring butts the insulation layer. | 10-14-2010 |
20100283115 | SCHOTTKY DIODE WITH IMPROVED HIGH CURRENT BEHAVIOR AND METHOD FOR ITS PRODUCTION - In the diffusion region ( | 11-11-2010 |
20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
20110084353 | TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage. | 04-14-2011 |
20110089521 | Electronic Device and Method For Manufacturing Thereof - An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure. | 04-21-2011 |
20110163409 | SEMICONDUCTOR DEVICE - A TMBS diode is disclosed. In an active portion and a voltage withstanding structure portion of the diode, an end portion trench surrounds active portion trenches. An active end portion which is an outer circumferential side end portion of an anode electrode is in contact with conductive polysilicon inside the end portion trench. A guard trench is separated from the end portion trench and surrounds it. A field plate provided on an outer circumferential portion of the anode electrode is separated from the anode electrode, and contacts both part of a surface of an n-type drift layer in a mesa region between the end portion trench and the guard trench and the conductive polysilicon formed inside the guard trench. The semiconductor device is high in withstand voltage without injection of minority carriers, and electric field intensity of a trench formed in an end portion of an active portion is relaxed. | 07-07-2011 |
20110254118 | Schottky Diode with Control Gate for Optimization of the On State Resistance, the Reverse Leakage, and the Reverse Breakdown - A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode. | 10-20-2011 |
20120056294 | SCHOTTKY DIODES WITH DUAL GUARD RING REGIONS AND ASSOCIATED METHODS - The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the outer guard ring. And wherein the inner guard stripe has a shallower junction depth than the outer guard ring. | 03-08-2012 |
20120175724 | Trenched Schottky Diode and Method of Forming a Trenched Schottky Diode - A Schottky diode with a small footprint and a high-current carrying ability is fabricated by forming an opening that extends into an n-type semiconductor material. The opening is then lined with a metallic material such as platinum. The metallic material is then heated to form a salicide region where the metallic material touches the n-type semiconductor material. | 07-12-2012 |
20120211859 | SCHOTTKY DIODE - A Schottky diode including a semiconductor region, a first terminal comprising a metal or a metal silicide or being metallic, and a second terminal comprising at least a portion of the semiconductor region. The diode further includes an at least partly conductive material or a material capable of holding a charge in close proximity to, or in contact with, or surrounding one of the first and second terminals, a field insulator located at least partly in the semiconductor region, a dielectric region located over the semiconductor region between the field insulator and the one of the first and second terminals for isolating the conductive or charge-holding material from the semiconductor region, and wherein the dielectric region comprises insulating regions of different thicknesses. | 08-23-2012 |
20130062723 | SCHOTTKY DIODE - The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer. | 03-14-2013 |
20130119505 | Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy - Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process. | 05-16-2013 |
20130221477 | SEMICONDUCTOR DEVICE - A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n | 08-29-2013 |
20130277791 | SCHOTTKY DIODE WITH OPPOSITE-POLARITY SCHOTTKY DIODE FIELD GUARD RING - In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode. | 10-24-2013 |
20130307111 | SCHOTTKY BARRIER DIODE HAVING A TRENCH STRUCTURE - A TMBS diode is disclosed. In an active portion and voltage withstanding structure portion of the diode, an end portion trench surrounds active portion trenches. An active end portion which is an outer circumferential side end portion of an anode electrode is in contact with conductive polysilicon inside the end portion trench. A guard trench is separated from the end portion trench and surrounds it. A field plate provided on an outer circumferential portion of the anode electrode is separated from the anode electrode, and contacts both part of a surface of n-type drift layer in a mesa region between the end portion trench and the guard trench and the conductive polysilicon formed inside the guard trench. The semiconductor device has high withstand voltage without injection of minority carriers, and relaxed electric field intensity of the trench formed in an end portion of an active portion. | 11-21-2013 |
20140077328 | TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME - A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage. | 03-20-2014 |
20140145290 | HIGH-VOLTAGE SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF - A high-voltage Schottky diode and a manufacturing method thereof are disclosed in the present disclosure. The diode includes: a P-type substrate and two N-type buried layers, a first N-type buried layer is located below a cathode lead-out area, and a second N-type buried layer is located below a cathode region; an epitaxial layer; two N-type well regions located on the epitaxial layer, a first N-type well region is a lateral drift region and it is provided with a cathode lead-out region, and a second N-type well region is located on the second N-type buried layer and it is a cathode region; a first P-type well region located on the second N-type buried layer and surrounding the cathode region; a field oxide isolation region located on the lateral drift region; an anode located on the cathode region and a cathode located on the surface of the cathode lead-out region. | 05-29-2014 |
20140210037 | SEMICONDUCTOR DEVICE - A power diode is disclosed wherein it is possible to lower on-voltage by expanding a conducting region at an on time. By applying negative voltage to a plate electrode when turning on a power diode, an inversion layer is formed in a front surface layer of an n drift region sandwiched between a p guard ring region and a p anode region, and the p guard ring region and p anode region are connected by the inversion layer, thereby causing one portion or all of the p guard ring region to function as an active region together with the anode region, and expanding an energization region, thus lowering on-voltage. | 07-31-2014 |
20140312453 | SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY - Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process. | 10-23-2014 |
20160027866 | SEMICONDUCTOR DEVICE - A semiconductor device, including: a semiconductor substrate of a first conductivity type, the semiconductor substrate having an edge termination area adjacent to an outermost periphery thereof; an anode structure provided in a bottom surface of the semiconductor substrate; a cathode region of the first conductivity type selectively provided in a top surface of the semiconductor substrate at an inner side of the edge termination area; a cathode electrode on the cathode layer; and an isolation region of a second conductivity type in the outermost periphery of the semiconductor substrate, the isolation region having a vertically elongated shape such that a bottom of the isolation region is connected to an outermost periphery of the anode structure on the bottom surface of the semiconductor substrate and a top of the isolation region reaches the top surface of the semiconductor substrate. | 01-28-2016 |
20160064475 | LATERAL PiN DIODES AND SCHOTTKY DIODES - Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate. | 03-03-2016 |
20160079347 | SEMICONDUCTOR DEVICE - It is an objective to improve reverse surge withstand capability of a semiconductor device, for example, a Schottky barrier diode. | 03-17-2016 |
20160118473 | NON-PLANAR SCHOTTKY DIODE AND METHOD OF FABRICATION - A non-planar Schottky diode includes a semiconductor substrate of a first type, the first type including one of n-type and p-type. The structure further includes raised semiconductor structure(s) of a second type opposite the first type coupled to the substrate, isolation material surrounding a lower portion of the raised structure(s), a first well of the second type directly under the raised structure(s), a guard ring of the first type around an edge of a top portion of the first well, a conformal layer of silicide over a top portion of the raised structure(s) above the isolation material, and a common contact above the conformal layer of silicide. The non-planar Schottky diode can be fabricated with non-planar transistors, e.g., FinFETs. | 04-28-2016 |