Class / Patent application number | Description | Number of patent applications / Date published |
257475000 | With doping profile to adjust barrier height | 25 |
20080203517 | SEMICONDUCTOR COMPONENT HAVING RECTIFYING JUNCTIONS AND METHOD FOR PRODUCING THE SAME - A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude. | 08-28-2008 |
20090020843 | Bottom anode Schottky diode structure and method - This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as an Schottky anode. The BAS diode further includes a lateral cathode region extended laterally from a cathode electrode near a top surface of the semiconductor substrate opposite the Schottky barrier metal wherein the lateral cathode region doped with an opposite dopant from the sinker dopant region and interfacing the sinker dopant region whereby a current path is formed from the cathode electrode to the anode electrode through the lateral cathode region and the sinker dopant region in applying a forward bias voltage and the sinker dopant region depleting the cathode region in applying a reverse bias voltage for blocking a leakage current. | 01-22-2009 |
20090057807 | SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREOF - The invention provides a Schottky barrier diode in which a forward voltage is low, a backward leakage current is small, and a withstanding voltage of an element is high, by improving both the forward voltage VF and the backward leakage current IR. A Schottky barrier diode of the invention includes a semiconductor substrate whose surface is provided with a semiconductor layer of first conduction type, a plurality of semiconductor layers of second conduction type provided as junction barriers at a predetermined depth from the surface of the semiconductor layer of first conduction type, an annular shape guard ring comprised of a semiconductor layer of second conduction type to surround the semiconductor layer of second conduction type on the surface of the semiconductor layer of first conduction type, and a metal layer disposed so as to contact the semiconductor layer of first conduction type and the semiconductor layer of second conduction type. In this Schottky barrier diode, a width of a depletion layer is determined such that an inside of the junction barrier is filled with the depletion layer upon application of a voltage. | 03-05-2009 |
20090283851 | NOVEL SCHOTTKY DIODE FOR HIGH SPEED AND RADIO FREQUENCY APPLICATION - A semiconductor diode that eliminates leakage current and reduces parasitic resistance is disclosed. The semiconductor diode comprises a semiconductor substrate; a semiconductor layer disposed on the semiconductor substrate, wherein the semiconductor layer includes a first dopant and a first well with a Schottky region; and a polysilicon device positioned above the semiconductor layer and adjacent to the first well with the Schottky region. | 11-19-2009 |
20100032790 | Rectifier With PN Clamp Regions Under Trenches - A structure that includes a rectifier is formed as follows. A trench is formed in a semiconductor region of a first conductivity type. A dielectric layer is formed along opposing sidewalls of the trench but is discontinuous along the bottom of the trench. A doped liner is formed over the dielectric layer and along the bottom of the trench. The doped liner includes dopants of a second conductivity type and is in direct contact with the semiconductor region along the bottom of the trench. A portion of the dopants are diffused from the doped liner into the semiconductor region along the bottom of the trench to form a doped region. The doped region forms a PN junction with the surrounding semiconductor region. | 02-11-2010 |
20100155877 | NOVEL SCHOTTKY DIODE FOR HIGH SPEED AND RADIO FREQUENCY APPLICATION - A semiconductor diode that is disclosed. An exemplary semiconductor diode includes a portion of a semiconductor substrate including a first dopant, a first well with a Schottky region, and a second well with a second dopant; and an isolation region replacement element positioned over the semiconductor substrate and adjacent to the first and second wells. | 06-24-2010 |
20100314707 | Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers - Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion. | 12-16-2010 |
20110042775 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A method of producing a Schottky diode includes the steps of: forming a resist layer on the semiconductor substrate; performing a first exposure process on the resist layer; performing a first developing process for developing the resist layer to form a first Schottky diode having an excess region; performing a first cleaning process; performing a second exposure process on the first Schottky diode; performing a second developing process on the first Schottky diode to remove the excess region from the first Schottky diode so that a second Schottky diode corresponding to the specific Schottky diode is formed; and performing a second cleaning process. | 02-24-2011 |
20110227187 | Schottky barrier semiconductor device - The present invention provides a Schottky barrier semiconductor device having a semiconductor substrate | 09-22-2011 |
20120086099 | SCHOTTKY DIODE - An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The integrated circuit device includes a substrate, a diffusion source, and a lightly doped diffusion region in contact with a conductive layer. A junction of the lightly doped diffusion region with the conductive layer forms a Schottky region. An annealing process is performed to form the lightly doped diffusion region. The annealing process causes dopants from the diffusion source (for example, an n-well disposed in the substrate) of the integrated circuit device to diffuse into a region of the substrate, thereby forming the lightly doped diffusion region. | 04-12-2012 |
20120187520 | Semiconductor Device Comprising A Schottky Barrier Diode - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 07-26-2012 |
20120205773 | SCHOTTKY DIODE WITH LOWERED FORWARD VOLTAGE DROP - A Schottky diode with a lowered forward voltage drop has an N− type doped drift layer formed on an N+ type doped layer. The N− type doped drift layer has a surface formed with a protection ring inside which is a P-type doped layer. The surface of the N− type doped drift layer is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N− type doped drift layer within the P-type doped layer forms a Schottky barrier. An upward extending N type doped layer is formed on the N+ type doped layer and under the Schottky barrier to reduce the thickness of the N− type doped drift layer under the Schottky barrier. This lowers the forward voltage drop of the Schottky diode. | 08-16-2012 |
20120241897 | SEMICONDUCTOR SYSTEM INCLUDING A SCHOTTKY DIODE - A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown. | 09-27-2012 |
20120241898 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second semiconductor region of the first conductivity type and a second electrode. The first semiconductor region includes a first portion including a first major surface and a second portion extending in a first direction perpendicular to the first major surface on the first major surface. The first electrode includes a third portion provided to face the second portion and is provided to be separated from the first semiconductor region. The second semiconductor region is provided between the second and third portions, includes a first concentration region having a lower impurity concentration than the first semiconductor region and forms a Schottky junction with the third portion. The second electrode is provided on an opposite side of the first major surface and in conduction with the first portion. | 09-27-2012 |
20130026598 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material. | 01-31-2013 |
20130299937 | METHOD AND APPARATUS FOR ULTRA-LOW CONTACT RESISTANCE FOR SEMICONDUCTOR CHANNEL N-FET - A method and apparatus for reducing external series resistance (R | 11-14-2013 |
20140035090 | TRENCH SCHOTTKY DIODE - A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations. | 02-06-2014 |
20140061847 | SEMICONDUCTOR DEVICE COMPRISING A SCHOTTKY BARRIER DIODE - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-06-2014 |
20140145289 | SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARRIER ELEMENTS - The present disclosure relates to a Schottky diode having a drift layer and a Schottky layer. The drift layer is predominantly doped with a doping material of a first conductivity type and has a first surface associated with an active region. The Schottky layer is provided over the active region of the first surface to form a Schottky junction. A plurality of junction barrier elements are formed in the drift layer below the Schottky junction, and a plurality of central implants are also formed in the drift layer below the Schottky junction. In certain embodiments, at least one central implant is provided between each adjacent pair of junction barrier elements. | 05-29-2014 |
20150061067 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an epitaxial layer of a first conductive type; an anode electrode and a cathode electrode arranged on the epitaxial layer to be separated from each other; a first drift layer of the first conductive type formed in the epitaxial layer; a Schottky contact area at a region of contact between the anode electrode and the first drift layer; an impurity region of a second conductive type different from the first conductive type at the epitaxial layer; and an insular impurity region formed below the Schottky contact area. | 03-05-2015 |
20150084153 | SCHOTTKY DEVICE AND METHOD OF MANUFACTURE - A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile. | 03-26-2015 |
20150333191 | SCHOTTKY DIODE - The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer. | 11-19-2015 |
20150364562 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer that includes a first region and a second region, a second semiconductor layer that is provided on an upper side of the first semiconductor layer, a third semiconductor layer that is selectively provided on an upper side of the second semiconductor layer, a control electrode provided in the second semiconductor layer and the third semiconductor layer through an insulation film, a first conductor that is provided in the first semiconductor layer so as to be in contact with the control electrode and the first semiconductor layer through the insulation film and is positioned further on a first semiconductor layer side than the control electrode, a second conductor that extends in a direction from the third semiconductor layer to the first semiconductor layer in the second region and is provided in the first semiconductor layer through an insulation film, a first electrode that is electrically connected to the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer, and a second electrode that is electrically connected to the first semiconductor layer. | 12-17-2015 |
20160020272 | Schottky Diode and Method of Manufacturing the Same - A Schottky diode includes a drift region of a first conductive type formed at a surface portion of a substrate, an insulating layer disposed on the substrate and having an opening exposing a portion of the drift region, and a titanium silicide layer disposed on the portion of the drift region exposed by the opening. | 01-21-2016 |
20160172458 | SCHOTTKY DEVICE AND METHOD OF MANUFACTURE | 06-16-2016 |