Entries |
Document | Title | Date |
20080230866 | RFID TEMPERATURE SENSING WAFER, SYSTEM AND METHOD - A system and method for manufacturing semiconductor wafers comprising an RFID temperature sensor and generally described herein. Other embodiments may be described and claimed. | 09-25-2008 |
20090026570 | Methods and structures for discharging plasma formed during the fabrication of semiconuctor device - Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure. | 01-29-2009 |
20090026571 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels. | 01-29-2009 |
20090140369 | SEMICONDUCTOR POWER MODULE PACKAGE WITHOUT TEMPERATURE SENSOR MOUNTED THEREON AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal. | 06-04-2009 |
20090189239 | Thermoelectric Module - A thermoelectric module has a first substrate, a second substrate spaced from the first substrate, a plurality of P type thermoelectric elements and N type thermoelectric elements arranged in the space between the first and second substrates, and a plurality of electrodes which connect the P type and N type thermoelectric elements in series. Each electrode is connected to a respective one of the plurality of P type thermoelectric elements at a first connection and a respective one of the plurality of N type thermoelectric elements in the space, and a sealant is located at an edge portion of the space. Each one of a series of first or outer electrodes closest to the edge portion of the space has a concave portion that is concaved in a direction departing from the edge portion of the space and is at a position between the first connection and the second connection. | 07-30-2009 |
20090230499 | Sensor device - A sensor device for sensing air flow speed at the exterior of an aircraft, comprising a substrate having an upper side on which is mounted a diaphragm over an aperture or recess in the substrate, the diaphragm being thermally and electrically insulative, and mounting on its upper surface a heating element comprising a layer of resistive material, and wherein electrical connections to the heating element are buried in the diaphragm and/or the substrate, and provide electrical terminals at the lower side of the substrate. The heating element is exposed to the environment, but the remaining electrical parts of the device are not exposed. | 09-17-2009 |
20090289321 | Thermal sensing and reset protection for an integrated circuit chip - There is provided a semiconductor package that includes a first semiconductor die mounted on a package substrate. The semiconductor package further includes a second semiconductor die mounted on the first semiconductor die and including a thermal sensing and reset protection circuit. The thermal sensing and reset protection circuit is configured to determine a temperature of the first semiconductor die and to provide a reset protection signal to the first semiconductor die when the temperature of the first semiconductor die is substantially equal to a preset temperature so as to protect the first semiconductor die from thermal runaway. The reset protection signal can cause the first semiconductor die to be in a sleep mode or a reset state. | 11-26-2009 |
20100001360 | LEVEL POSTURE SENSING CHIP AND ITS MANUFACTURING METHOD, LEVEL POSTURE SENSOR - The present invention discloses a gas pendulum style level posture sensing chip and its manufacturing method and a level posture sensor. The gas pendulum style level posture sensing chip includes: a semiconductor substrate; two sets of arm thermosensitive fuses formed on the surface of the semiconductor substrate, each set of the thermosensitive fuses including two thermosensitive fuses in parallel to each other, the two sets of thermosensitive fuses being vertical to each other; electrodes formed at the two ends of the thermosensitive fuses. For the level posture sensing chip and sensor provided by the present invention, the parallelism and verticality of the thermosensitive fuses is high in precision such that the more accurate measurement can be implemented. | 01-07-2010 |
20100001361 | SUSPENDED GETTER MATERIAL-BASED STRUCTURE - Getter structure comprising a substrate and at least one getter material-based layer mechanically connected to the substrate by means of at least one support, in which the surface of the support in contact with the substrate is smaller than the surface of a first face of the getter material layer, in which said first face is in contact with the support, and a second face of the getter material layer, opposite said first face is at least partially exposed. | 01-07-2010 |
20100032789 | PASSIVE TEMPERATURE COMPENSATION OF SILICON MEMS DEVICES - The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods. | 02-11-2010 |
20100078753 | Flow Sensor and Method of Fabrication - A method for forming a flow sensor having self-supported heat-carrying elements is disclosed. Self-supported heat-carrying elements are capable of operating with higher thermal efficiency, enabling lower power consumption and higher sensitivity, due to a lack of heat loss into a supporting membrane. Self-supported heat-carrying elements facilitate wider operating temperature range and compatibility with harsh media. | 04-01-2010 |
20100117185 | Temperature sensor with buffer layer - A temperature sensor with a bandgap circuit is provided. The bandgap circuit is covered by a buffer layer of photoresist. The device is packaged in a housing. By providing the buffer layer, mechanical stress in the bandgap circuit, as it is e.g. caused by different thermal expansion coefficients of the packaging and the chip, can be reduced. This improves the accuracy of the device. | 05-13-2010 |
20100283114 | CHIP-TYPE SEMICONDUCTOR CERAMIC ELECTRONIC COMPONENT - A chip-type semiconductor ceramic electronic component including a ceramic body made of a semiconductor ceramic, first external electrodes formed on opposite end surfaces of the ceramic body, and second external electrodes extending to cover surfaces of the first external electrodes and part of side surfaces of the ceramic body. A curvature radius of a corner portion of the ceramic body is R (μm), a maximum thickness of a layer of the first external electrode layer, which is in contact with the ceramic body, measured from the end surface of the ceramic body is y (μm), and a minimum thickness of a layer of the second external electrode, which is in contact with the side surface of the ceramic body, measured from an apex of the corner portion of the ceramic body is x (μm), and 20≦R≦50, −0.4 x+0.6≦y≦0.4 is satisfied when 0.5≦x≦1.1, and −0.0076 x+0.16836≦y≦0.4 is satisfied when 1.1≦x≦9.0. | 11-11-2010 |
20100289108 | Silicon dioxide cantilever support and method for silicon etched structures - A semiconductor device includes a semiconductor layer ( | 11-18-2010 |
20100327393 | Method and structures for etching cavity in silicon under dielectric membrane - A semiconductor device includes a semiconductor layer ( | 12-30-2010 |
20110006388 | SEMICONDUCTOR DEVICE - A semiconductor device which can actively dissipate heat in response to operation is provided. A Seebeck element | 01-13-2011 |
20110042774 | Film Sensor and Method for Producing a Film Sensor - A film sensor having a first carrier film with at least one first conductor track is disclosed. The film sensor has a second carrier film which has at least one second conductor track. At least one electrical component is arranged between the first carrier film and the second carrier film. The electrical component has the properties of a functional ceramic. The electrical component is electrically contact-connected by means of at least one first conductor track and at least one second conductor track. | 02-24-2011 |
20110057285 | Sensor for detecting thermal radiation - A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension. | 03-10-2011 |
20110073984 | SEMICONDUCTOR POWER MODULE PACKAGE WITH TEMPERATURE SENSOR MOUNTED THEREON AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal. | 03-31-2011 |
20110095390 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT - The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A | 04-28-2011 |
20110169123 | BARIUM TITANATE-BASED SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR - Provided is a barium titanate-based semiconductor ceramic composition which contains no Pb, which can have an increased Curie temperature, which exhibits slight deterioration with time, and which has high reliability, containing a barium titanate-based semiconductor ceramic represented by the composition formula (Ba | 07-14-2011 |
20110186956 | ELECTRICALLY CONDUCTIVE POLYMER COMPOSITE AND THERMOELECTRIC DEVICE USING ELECTRICALLY CONDUCTIVE POLYMER MATERIAL - An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle. | 08-04-2011 |
20110198720 | THERMAL-TYPE INFRARED SOLID-STATE IMAGING ELEMENT - A thermal-type infrared solid-state imaging element is provided with a pixel having a diaphragm ( | 08-18-2011 |
20110210414 | Infrared sensor - An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate. | 09-01-2011 |
20110210415 | FREESTANDING CARBON NANOTUBE NETWORKS BASED TEMPERATURE SENSOR - The present invention introduces a small-size temperature sensor, which exploits a random or oriented network of un-functionalized, single or multi-walled, carbon nanotubes to monitor a wide range of temperatures. Such network is manufactured in the form of freestanding thin film with an electric conductance proven to be a monotonic function of the temperature, above 4.2 K. Said carbon nanotube film is wire-connected to a high precision source-measurement unit, which measures its electric conductance by a standard two or four-probe technique. Said temperature sensor has a low power consumption, an excellent stability and durability, a high sensitivity and a fast response; its manufacturing method is simple and robust and yields low-cost devices. Said temperature sensor, freely scalable in dimension, is suitable for local accurate measurements of rapidly and widely changing temperatures, while introducing a negligible disturb to the measurement environment. | 09-01-2011 |
20110233710 | PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a support member, a capacitor and a fixing part. The support member includes a first side and a second side opposite from the first side, with the first side facing a cavity. The capacitor includes a pyroelectric body between a first electrode and a second electrode such that an amount of polarization varies based on a temperature. The capacitor is mounted and supported on the second side of the support member with the first electrode being disposed on the second side of the support member. A thermal conductance of the first electrode is less than a thermal conductance of the second electrode. The fixing part supports the support member. | 09-29-2011 |
20110241153 | METHOD FOR THIN FILM THERMOELECTRIC MODULE FABRICATION - Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on a substrate. The one or more metallization layers and the N-type thin film thermoelectric material layer are etched to form a number of N-type thermoelectric material legs. A first electrode assembly is then bonded to a first portion of the N-type thermoelectric material legs, and the first electrode assembly including the first portion of the N-type thermoelectric material legs is removed from the substrate. In a similar manner, a second electrode assembly is bonded to a first portion of a number of P-type thermoelectric material legs. The first and second electrode assemblies are then bonded using a flip-chip bonding process to complete the fabrication of the thermoelectric module. | 10-06-2011 |
20110241154 | OPTICAL SENSOR - In an infrared sensor ( | 10-06-2011 |
20110291222 | SILICON DIOXIDE CANTILEVER SUPPORT AND METHOD FOR SILICON ETCHED STRUCTURES - An apparatus includes a semiconductor layer ( | 12-01-2011 |
20110298080 | METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE, AND THERMOELECTRIC CONVERSION MODULE - There is provided a method for manufacturing a thermoelectric conversion module that can yield a thermoelectric conversion module with a high insulating property and high density without requiring positioning of the thermoelectric conversion elements, as well as a thermoelectric conversion module manufactured by the method. The method for manufacturing a thermoelectric conversion module | 12-08-2011 |
20110304004 | THERMOELECTRIC ELEMENT MODULE AND MANUFACTURING METHOD - A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided. | 12-15-2011 |
20110304005 | RESONATOR ELEMENT AND RESONATOR PIXEL FOR MICROBOLOMETER SENSOR - A resonator element for the absorption and/or conversion of electromagnetic waves having a predefined wavelength, in particular infrared radiation having a wavelength of 2 μm to 200 μm, into heat, has a three-layer structure formed of a first metal layer, a second metal layer and a dielectric layer interposed between the two metal layers. The maximum lateral dimension of the layers is in the range between one quarter and a half of the predefined wavelength. | 12-15-2011 |
20110309463 | ELECTROCALORIC EFFECT MATERIALS AND THERMAL DIODES - Examples are generally described that include a substrate, an electrocaloric effect material at least partially supported by the substrate, and a thermal diode at least partially supported by the electrocaloric effect material. | 12-22-2011 |
20110316111 | PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element mounted on a first side of a support member with a second side facing a cavity. The pyroelectric detection element has a capacitor including a first electrode, a pyroelectric body and a second electrode, and an interlayer insulation layer forming first and second contact holes passing respectively through to the first and second electrodes. First and second plugs are respectively embedded in the first and second contact holes, with first and second electrode wiring layers are respectively connected to the first and second plugs. A thermal conductivity of material of the second electrode wiring layer is lower than a thermal conductivity of material of a portion of the second electrode connected to the second plug. | 12-29-2011 |
20110316112 | PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction. | 12-29-2011 |
20110316113 | PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element, a support member, and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body disposed between the first and second electrodes, and a first reducing gas barrier layer that protects the capacitor from reducing gas. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support member has a mounting member on which the capacitor is mounted and an arm member linked to the mounting member. The support part supports a portion of the support member. An outer peripheral edge of the first reducing gas barrier layer is disposed between and spaced apart from an outer peripheral edge of the mounting member and an outer peripheral edge of the capacitor in plan view. | 12-29-2011 |
20120007205 | INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure. | 01-12-2012 |
20120025343 | THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE - A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section. | 02-02-2012 |
20120068296 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: | 03-22-2012 |
20120074514 | ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT - A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating. | 03-29-2012 |
20120086098 | IONIC ISOLATION RING - There has been very little (if any) attention to address contamination diffusion within an integrated circuit (IC) because there are very few applications where a protective overcoat will be penetrated as part of the manufacturing process. Here, a sealing ring is provided that address this problem. Preferably, the sealing ring uses the combination of electrically conductive barrier rings and the tortuous migration path to allow an electronic device (i.e., thermopile), where a protective overcoat is penetrated during manufacture, to communicate with external devices while being isolated to prevent contamination. | 04-12-2012 |
20120091553 | Method for Detecting the Repackaging of an Integrated Circuit after it has been Originally Packaged, and Corresponding Integrated Circuit - An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged. | 04-19-2012 |
20120139075 | THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler is configured to direct heat through channels of the cooler. The thermoelectric cooler has multiple electrodes and a first dielectric material positioned between side surfaces of the electrodes. A second dielectric material, different from the first dielectric material, is in contact with top surfaces of the electrodes. The first dielectric material extends above the top surface of the electrodes, separating portions of the second dielectric material, and is in contact with a portion of the top surfaces of the electrodes. The first dielectric material has a thermal conductivity different than a thermal conductivity of the second dielectric material. A ratio of the first dielectric material to the second dielectric material in contact with the top surface of the electrodes may be selected to control the heat retention. The semiconductor thermoelectric cooler may be manufactured using thin film technology. | 06-07-2012 |
20120139076 | THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology. | 06-07-2012 |
20120139077 | METHOD AND APPARATUS FOR REDUCING THERMOPILE VARIATIONS - Here, an apparatus is provided. The apparatus generally comprises a substrate and a thermopile. The thermopile includes a cavity that is etched into the substrate, a functional area that is formed over the substrate (where the cavity is generally coextensive with the functional area), and a metal ring formed over the substrate along the periphery of the functional area (where the metal ring is thermally coupled to the substrate). | 06-07-2012 |
20120139078 | Microbolometer Semiconductor Material - A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate ( | 06-07-2012 |
20120161273 | THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An M | 06-28-2012 |
20120175723 | INFRARED IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection. | 07-12-2012 |
20120181651 | Temperature Sensor Based on Magnetic Tunneling Junction Device - A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection. | 07-19-2012 |
20120187519 | COOLING DEVICE FOR AN INTEGRATED CIRCUIT - A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane. | 07-26-2012 |
20120211857 | PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a substrate, a support member and a pyroelectric detection element, which includes a capacitor, first and second reducing gas barrier layers, an insulating layer, a plug and a second electrode wiring layer. The first reducing gas barrier layer covers at least a second electrode and a pyroelectric body of the capacitor, and has a first opening that overlaps the second electrode in plan view. The insulating layer covers at least the first reducing gas barrier layer, and has a second opening that overlaps the first opening in plan view. The plug is disposed in the first and second openings and connected to the second electrode. The second electrode wiring layer is formed on the insulating layer and connected to the plug. The second reducing gas barrier layer is formed on the insulating layer and the second electrode wiring layer and covers at least the plug. | 08-23-2012 |
20120211858 | THERMAL DETECTOR, THERMAL DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light. | 08-23-2012 |
20120217608 | THERMOELECTRIC DEVICE USING SEMICONDUCTOR TECHNOLOGY - An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 μm. | 08-30-2012 |
20120228733 | MEMS-BASED GETTER MICRODEVICE - A MEMS (micro-electro-mechanical system) getter microdevice for controlling the ambient pressure inside the hermetic packages that enclose various types of MEMS, photonic, or optoelectronic devices. The getter microdevice revolves around a platform suspended at a height above a substrate, and which is supported by supporting legs having low thermal conductance. Layers are deposited on the platform, such layers including a properly patterned resistor element, a heat-spreading layer and, finally, a thin-film getter material. When an electrical current flows through it, the resistor element heats the thin-film getter material until it reaches its activation temperature. The getter material then absorbs the gas species that could be present in the hermetic package, such gas species possibly impairing the operation of the devices housed in the packages while reducing their lifetime. The weak thermal conductance between the platform and the substrate helps in preventing damages to the surrounding devices when the MEMS getter microdevice is heated at its activation temperature, and it reduces the electrical power required for reaching the activation temperature as well. | 09-13-2012 |
20120248564 | Dual Compartment Semiconductor Package with Temperature Sensor - According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package. | 10-04-2012 |
20120261785 | SHARED MEMBRANE THERMOPILE SENSOR ARRAY - A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate. | 10-18-2012 |
20120319226 | FABRICATION OF ROBUST ELECTROTHERMAL MEMS WITH FAST THERMAL RESPONSE - Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror. | 12-20-2012 |
20130015548 | INTEGRATED CIRCUIT WITH TEMPERATURE INCREASING ELEMENT AND ELECTRONIC SYSTEM HAVING THE SAMEAANM Chen; Hsieh-ChunAACI Taichung CityAACO TWAAGP Chen; Hsieh-Chun Taichung City TWAANM Chen; Tsang-YiAACI New Taipei CityAACO TWAAGP Chen; Tsang-Yi New Taipei City TW - To provide an integrated circuit with functionality under environment with temperature lower than a working condition, the integrated circuit is designed to include a heating element incorporated with signal pins on a carrier, such as a lead frame, that supports a chip die and controlled by a heating control unit to increase temperature of the chip die. The heating control unit provides voltage for the heating element when a detecting unit detects that the temperature of the chip die falls below a predetermined temperature and a power control unit provide operation power for the chip die when the temperature of the chip die detected by the detecting unit reaches or falls above the predetermined temperature. | 01-17-2013 |
20130015549 | Integrated Thermoelectric GeneratorAANM Fornara; PascalAACI PourrieresAACO FRAAGP Fornara; Pascal Pourrieres FRAANM Rivero; ChristianAACI RoussetAACO FRAAGP Rivero; Christian Rousset FR - An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity. | 01-17-2013 |
20130020670 | TEMPERATURE SENSOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND TEMPERATURE SENSOR - A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element α having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element α in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from −50° C. to 1050° C. | 01-24-2013 |
20130026596 | FOCAL PLANE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method of forming a focal plane array by: preparing a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer; preparing a second wafer including read-out integrated circuit and a contact pad, which is covered by another sacrificial layer into which are formed support legs in contact with the contact pad, the support legs being covered with a further sacrificial layer; bonding the sacrificial layers of the first and second wafers together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; defining a pixel in the sensing material and forming a conductive via through the pixel for providing a connection between an uppermost surface of the pixel and the supporting legs; and removing the sacrificial layers to release the pixel, with the supporting legs underneath it. | 01-31-2013 |
20130026597 | METHOD OF GENERATING ELECTRICAL ENERGY IN AN INTEGRATED CIRCUIT DURING THE OPERATION OF THE LATTER, CORRESPONDING INTEGRATED CIRCUIT AND METHOD OF FABRICATION - An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material. | 01-31-2013 |
20130037904 | PTC ELEMENT AND HEATING-ELEMENT MODULE - An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition. | 02-14-2013 |
20130062722 | CHIP MODULE AND A METHOD FOR MANUFACTURING A CHIP MODULE - In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe area and at least partially on the second leadframe area. | 03-14-2013 |
20130069194 | GRAPHENE-BASED THERMOPILE - Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices. | 03-21-2013 |
20130075853 | Stacked Die Package for MEMS Resonator System - A stacked die package for an electromechanical resonator system includes an electromechanical resonator die bonded or fixed to a control IC die for the electromechanical resonator by, for example, a thermally and/or electrically conductive epoxy. In various embodiments, the electromechanical resonator can be a micro-electromechanical system (MEMS) resonator or a nano-electromechanical system (NEMS) resonator. Certain packaging configurations that may include the chip that contains the electromechanical resonator and the control chip include chip-on-lead (COL), chip-on-paddle (COP), and chip-on-tape (COT) packages. The stacked die package may provide small package footprint and/or low package thickness, and low thermal resistance and a robust conductive path between the dice. | 03-28-2013 |
20130082345 | Hybrid FPA for Thz imaging with an antenna array, coupled to CMOS-MEMS thermal sensors, implementing per-pixel ES actuation and enabling tuning, correlated double sampling and AM modulation - A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor that couples energy from the antenna to the thermal sensor. The capacitor plates used for capacitive coupling of the received signal realize an electro-static actuator whereby the application of a DC bias varies the coupling capacitor gap. The DC bias causes the actuator to pull the suspended platform close to the antenna to reduce the capacitive gap, increasing the coupling capacitance, to touch the antenna array thus quickly discharging the heat induced in the sensor platform or to perform advanced readout operations, such as amplitude modulation and correlated double sampling. | 04-04-2013 |
20130119504 | Thermal Airlflow Sensor - An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film | 05-16-2013 |
20130134544 | ENERGY HARVESTING IN INTEGRATED CIRCUIT PACKAGES - An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone. | 05-30-2013 |
20130147004 | Integrated Capacitive Device Having a Thermally Variable Capacitive Value - An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances. | 06-13-2013 |
20130168798 | CHIP PACKAGE STRUCTURE - A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip. | 07-04-2013 |
20130175654 | BULK NANOHOLE STRUCTURES FOR THERMOELECTRIC DEVICES AND METHODS FOR MAKING THE SAME - Array of nanoholes and method for making the same. The array of nanoholes includes a plurality of nanoholes. Each of the plurality of nanoholes corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μm. Each of the plurality of nanoholes corresponds to a cross-sectional area associated with a distance across, and the distance across ranges from 5 nm to 500 nm. Each of the plurality of nanoholes is separated from at least another nanohole selected from the plurality of nanoholes by a semiconductor material associated with a sidewall thickness, and the sidewall thickness ranges from 5 nm to 500 nm. | 07-11-2013 |
20130187252 | BONDPAD INTEGRATED THEROMELECTRIC COOLER - An integrated circuit has thermoelectric cooling devices integrated into bondpads. A method for operating the integrated circuit includes turning a thermal switch to a thermoelectric cooler operate position when the integrated circuit is powered up, turning the thermal switch to a thermoelectric cooler operate position to allow the thermoelectric cooler to operate when the integrated circuit powers down, and turning the thermal switch to a thermoelectric cooler off position when a predetermined integrated circuit chip temperature is reached. | 07-25-2013 |
20130221475 | SEMICONDUCTOR CERAMIC AND RESISTIVE ELEMENT - Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R1 | 08-29-2013 |
20130228890 | POWER SEMICONDUCTOR MODULE WITH METHOD FOR MANUFACTURING A SINTERED POWER SEMICONDUCTOR MODULE - Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallisation on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection. | 09-05-2013 |
20130256825 | INTEGRATED CIRCUIT COMPRISING A GAS SENSOR - An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element. | 10-03-2013 |
20130292789 | Optically Transitioning Thermal Detector Structures - A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature. | 11-07-2013 |
20130313674 | THERMAL ELECTROMAGNETIC WAVE DETECTION ELEMENT, METHOD FOR PRODUCING THERMAL ELECTROMAGNETIC WAVE DETECTION ELEMENT, THERMAL ELECTROMAGNETIC WAVE DETECTION DEVICE, AND ELECTRONIC APPARATUS - To provide a thermal electromagnetic wave detection element, a method for producing a thermal electromagnetic wave detection element, a thermal electromagnetic wave detection device, and an electrical apparatus, which are highly reliable and make it possible to prevent damage or deformation in the vicinity of the corner parts of a void, a thermal electromagnetic wave detection element includes: a semiconductor substrate; a support member provided on the semiconductor substrate; a detection unit that is provided on the support member and is able to extract from a pair of electrodes an electrical signal corresponding to a received amount of electromagnetic waves; and a pair of electrically conductive vias that perforate through the semiconductor substrate and are electrically connected to the pair of electrodes, a void that opens on the support member side being provided between the pair of vias of the semiconductor substrate. | 11-28-2013 |
20130313675 | Thermal Type Flowmeter - Provided is a compact thermal type flowmeter that can perform a partial thermal treatment on a sensor element portion without affecting other elements and can improve the reliability of a sensor element while improving the sensitivity of the sensor element. | 11-28-2013 |
20130320480 | METHODS AND STRUCTURES FOR REDUCING HEAT EXPOSURE OF THERMALLY SENSITIVE SEMICONDUCTOR DEVICES - A semiconductor device comprises an integrated circuit (IC) die having a top side and a back side. The circuit substrate includes a heat source circuit, a heat sensitive circuit, a package substrate coupled to the top side of the circuit substrate, and a plurality of thermally conductive through-silicon vias (TSVs) formed from the back side of the circuit substrate to near but not through the top side of the circuit substrate. | 12-05-2013 |
20130320481 | High Density Pyroelectric Thin Film Infrared Sensor Array and Method of Manufacture Thereof - A method of manufacturing a thermal sensor array comprises: (a) providing a first wafer comprising an integrated circuit; (b) providing a second wafer comprising a carrier substrate, a thermally sensitive layer, a first electrode and a second electrode; (c) applying a polymer to a bonding surface of at least one of the first wafer and the second wafer; (d) contacting the first wafer and the second wafer for a period of time and at a temperature and pressure sufficient to create a bond; (e) removing the carrier substrate; and (f) patterning and etching the thermally sensitive layer, the first electrode and the second electrode to create an array of pixels, wherein the first wafer and the second wafer are bonded without the need for fine alignment of the wafers. | 12-05-2013 |
20130328153 | ELECTRONIC-COMPONENT MOUNTING STRUCTURE - An electronic-component mounting structure includes an electronic component which includes a metal substrate, a semiconductor ceramic layer located on the metal substrate, a pair of split electrodes located on the semiconductor ceramic layer, and plating films located on the split electrodes and the metal substrate, and a mounting body on which lands to be connected to the respective split electrodes of the electronic component are provided. The position of a peripheral end portion of each land to be connected to the corresponding split electrode is located farther inside than the position of a peripheral end portion of the split electrode. In addition, a plane area of the land is smaller than that of the split electrode. | 12-12-2013 |
20130328154 | ELECTRONIC COMPONENT PACKAGE STRUCTURE - A thermistor includes a metal substrate, a semiconductor ceramic layer on the metal substrate, and a pair of split electrodes on the semiconductor layer. The semiconductor ceramic layer is formed by a solid-phase method. The metal substrate includes ceramic particles and is not interrupted in the direction of thickness by the ceramic particles or a pillar defined by a chain of the ceramic particles. Preferably, the metal substrate and the ceramic layer of the thermistor have a thickness of about 10 μm to about 80 μm and about 1 μm to about 10 μm, respectively. | 12-12-2013 |
20130334646 | METALLIC THERMAL SENSOR FOR IC DEVICES - A thermal sensor for use in an IC device is formed of a plurality of metal resistor units connected in series where each of the plurality of metal resistor units are formed on different wiring layers of the IC device connected by via segments and the metal resistor units are in a superimposed alignment with each other forming a stack. | 12-19-2013 |
20140015088 | THREE-DIMENSIONAL INTEGRATED STRUCTURE CAPABLE OF DETECTING A TEMPERATURE RISE - A three-dimensional integrated structure is formed from a first integrated circuit with a first cavity filled with a first conductive material and a second integrated circuit with a second cavity filled with a second conductive material, the second cavity facing the first cavity. The filled first cavity forms a first element and the filled second cavity forms a second element, the first and second elements separated from each other by a cavity. The first and second conductive materials have different thermal expansion coefficients. A contact detection circuit is electrically connected to the filled first and second cavities, and is operable to sense electrical contact between the first and second conductive materials in response to a change in temperature. | 01-16-2014 |
20140015089 | DIFFERENTIAL TEMPERATURE SENSOR AND ITS CAPACITORS IN CMOS/BICMOS TECHNOLOGY - The sensor is made on a semiconductor substrate covered with an electrically insulating layer. The electrically insulating layer separates a thermocouple from the substrate. It includes a first portion presenting a first value of capacitance per unit area and a second portion presenting a second value of capacitance per unit area, which is lower than the first value. The sensor includes first and second output terminals connected to the thermocouple. The first output terminal includes a first capacitor having a first electrode formed by a first leg made of an electrically conducting material. The second electrode of the capacitor is formed by a part of the substrate facing said first leg and separated from the first electrode by the first portion of the electrically insulating layer. The first leg connects the thermocouple while overlapping the second portion of the electrically insulating layer. | 01-16-2014 |
20140021576 | MINIATURE THERMOELECTRIC ENERGY HARVESTER AND FABRICATION METHOD THEREOF - A miniature thermoelectric energy harvester and a fabrication method thereof Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved. | 01-23-2014 |
20140061845 | SERPENTINE IR SENSOR - In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror. | 03-06-2014 |
20140070355 | ELECTRONIC DEVICE INCLUDING THERMAL SENSOR AND PELTIER COOLER AND RELATED METHODS - An electronic device may include a temperature sensing semiconductor substrate, that may include a thermal sensor at an upper surface thereof, and a cooling semiconductor substrate having an upper surface coupled to a lower surface of the temperature sensing semiconductor substrate. The cooling semiconductor substrate may include a Peltier cooler. At least one of the temperature sensing semiconductor substrate and the cooling semiconductor substrate may have a cavity therein beneath the thermopile and aligned therewith. | 03-13-2014 |
20140091422 | Thin Film with Improved Temperature Range - A device and a method of forming the same are disclosed. The device comprises a substrate and a thin film. The substrate is characterized by a first coefficient of thermal expansion. The thin film is attached to a surface of the substrate, and is characterized by a second coefficient of thermal expansion. The thin film includes first and second layers in states of compression, and a third layer in a state of tension, the third layer being positioned between the first and second layers. The thin film is in a net state of tension within a temperature range. | 04-03-2014 |
20140091423 | Infrared photosensor - A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce a current density in an area near to the surface and to increase it in an area far from the surface. In addition, a topology having an even absorption layer is proposed. The measures proposed have the aim of realizing a low-noise diode for thermal applications. | 04-03-2014 |
20140124890 | Semiconductor Package Having Multi-Phase Power Inverter with Internal Temperature Sensor - According to an exemplary implementation, a semiconductor package includes a multi-phase power inverter having power switches and situated on a leadframe of the semiconductor package. The semiconductor package further includes a temperature sensor situated on the leadframe, where the temperature sensor is configured to generate a sensed temperature of the power switches. The semiconductor package also includes a driver circuit configured to drive the power switches of the multi-phase power inverter responsive to the sensed temperature. The temperature sensor can be on a common IC with the driver circuit. Furthermore, the semiconductor package can include an over-temperature protection circuit configured to provide over-temperature protection to the multi-phase power inverter using the sensed temperature. | 05-08-2014 |
20140159191 | SEMICONDUCTOR CERAMIC AND SEMICONDUCTOR CERAMIC ELEMENT - Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor. | 06-12-2014 |
20140210036 | MEMBRANE-BASED SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below. | 07-31-2014 |
20140239434 | SEMICONDUCTOR PACKAGE - According to example embodiments, a semiconductor package may include a first package substrate, a first semiconductor chip on the first package substrate, and a thermistor array film on the first semiconductor chip. The thermistor array film may include a variable resistive film that covers the first semiconductor chip, and an array of electrode patterns that are connected to the variable resistive film. The array of electrode patterns may be connected to at least one of the upper and lower surfaces of the variable resistive film. | 08-28-2014 |
20140246749 | INFRARED DETECTOR AND INFRARED IMAGE SENSOR INCLUDING THE SAME - An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber. | 09-04-2014 |
20140252531 | SYSTEMS AND METHODS FOR HARVESTING DISSIPATED HEAT FROM INTEGRATED CIRCUITS (ICS) IN ELECTRONIC DEVICES INTO ELECTRICAL ENERGY FOR PROVIDING POWER FOR THE ELECTRONIC DEVICES - Systems and methods for harvesting dissipated heat from integrated circuits (ICs) in electronic devices into electrical energy for providing power for the electronic devices are disclosed. In one embodiment, energy transferred from one or more ICs in the form of dissipated heat is harvested to convert at least a portion of this dissipated heat into electricity. This power can be used to provide power to the ICs to reduce overall power consumption by the electronic device. The harvested dissipated heat can be supplied to ICs in the electronic device to provide power to the ICs. Alternatively, or in addition, the harvested dissipated heat can be stored in an energy storage device to provide power to the ICs at a later time. | 09-11-2014 |
20140264712 | INFRARED DETECTOR MADE UP OF SUSPENDED BOLOMETRIC MICRO-PLATES - An array bolometric detector for detecting an electromagnetic radiation in a predetermined infrared or terahertz wavelength range, including a substrate, and an array of bolometric microplates for the detection of the radiation, suspended above the substrate by support elements. The detector includes a membrane arranged above each microplate, and having patterns having a refractive index smaller than that of the membrane formed therein. The patterns are placed periodically along at least one axis of the membrane, according to a period shorter than or equal to | 09-18-2014 |
20140284753 | Thermal Air Flow Sensor - A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure. | 09-25-2014 |
20140291797 | Semiconductor Device - A semiconductor device of this disclosure includes: a circuit element mounted on a main face of a lead frame; an inductor mounted on a back face of the lead frame; and a resin body sealing the circuit element and the inductor; wherein the circuit element includes a thermo-sensitive element and has an overheating protection function of the inductor. | 10-02-2014 |
20140361397 | LOW POWER THERMAL IMAGER - A low power thermal imager is disclosed. In one embodiment, the thermal imager comprises a cross-bar architecture having a plurality of horizontal lines each arranged in a row, a plurality of vertical lines each arranged in a column, and a plurality of cross-points each formed at an intersection between one of the plurality of horizontal lines and one of the plurality of vertical lines; and a plurality of tunnel junction structures each located at one of the plurality cross-points, each tunnel junction structure including a first metal layer disposed over one of the plurality of vertical lines, an insulator layer disposed over the first metal layer, and a second metal layer disposed over the insulator layer and underneath one of the plurality of horizontal lines. | 12-11-2014 |
20150054114 | VERTICALLY STACKED THERMOPILE - A vertically stacked thermopile and an IR sensor using said stacked thermopiles are provided. The vertically stacked thermopile may include multiple thermocouples stacked vertically on one another. The thermocouples may be connected in series, parallel, or a combination of series and parallel. One or more vertically stacked thermopiles may be included in an IR sensor and the thermopiles may be connected in series, parallel, or a combination of series and parallel. | 02-26-2015 |
20150076650 | Semiconductor Device and a Method for Forming a Semiconductor Device - A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a first doping region arranged at a main surface of the semiconductor substrate, an emitter layer arranged at a back side surface of the semiconductor substrate, at least one first conductivity type area separated from the first doping region by a second doping region of the semiconductor substrate and at least one temperature-stabilizing resistance area. The first doping region has a first conductivity type and the emitter layer has at least mainly a second conductivity type. The second doping region has the second conductivity type and the at least one first conductivity type area has the first conductivity type. The at least one temperature-stabilizing resistance area is located within the second doping region and adjacent to the at least one first conductivity type area. Further, the at least one temperature-stabilizing resistance area has a lower variation of a resistance over a range of an operating temperature of the semiconductor device than at least a part of the second doping region located adjacent to the at least one temperature-stabilizing resistance area. | 03-19-2015 |
20150076651 | THERMOCOUPLE, THERMOPILE, INFRARED RAY SENSOR AND METHOD OF MANUFACTURING INFRARED RAY SENSOR - An infrared ray sensor includes a thermopile. The thermopile includes a first semiconductor material part and a second semiconductor material part, the first semiconductor material part and the second semiconductor material part are laminated, and a dielectric film is provided between the first semiconductor material part and the second semiconductor material part. | 03-19-2015 |
20150097260 | Single Silicon Wafer Micromachined Thermal Conduction Sensor - A single silicon wafer micromachined thermal conduction sensor is described. The sensor consists of a heat transfer cavity with a flat bottom and an arbitrary plane shape, which is created in a silicon substrate. A heated resistor with a temperature dependence resistance is deposed on a thin film bridge, which is the top of the cavity. A heat sink is the flat bottom of the cavity and parallel to the bridge completely. The heat transfer from the heated resistor to the heat sink is modulated by the change of the thermal conductivity of the gas or gas mixture filled in the cavity. This change can be measured to determine the composition concentration of the gas mixture or the pressure of the air in a vacuum system. | 04-09-2015 |
20150130012 | THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer. | 05-14-2015 |
20150137303 | MECHANISMS FOR FORMING MICRO-ELECTRO MECHANICAL DEVICE - Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS sensor over the substrate. The MEMS sensor includes a floating heater disposed over the substrate. The MEMS sensor further includes a heat sink disposed over the substrate and at a side of the floating heater, and the heat sink has an air gap with the floating heater. The MEMS sensor further includes a first plurality of vias formed through the heat sink and thermally connected to the first substrate. | 05-21-2015 |
20150137304 | STRUCTURE AND FABRICATION METHOD OF A HIGH PERFORMANCE MEMS THERMOPILE IR DETECTOR - The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures. The hot junctions of the thermopile are in contact with the IR absorber through the second thermal-conductive-electrical-isolated structures, and the second thermal-conductive-electrical-isolated structures are located above the releasing barrier band. The structure of such detector is simple, and it is easy to implement and can also be monolithicly integrated. Such detector has high responsivity and detection rate, and is CMOS-compatible, thus can be used widely in a safe and reliable manner. | 05-21-2015 |
20150311246 | MICROBOLOMETER CONTACT SYSTEMS AND METHODS - Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a second metal layer formed on the first metal layer; a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills an inner portion of the contact; and a first passivation layer formed on the third metal layer. | 10-29-2015 |
20150332987 | Microelectronic Assembly including Built-In Thermoelectric Cooler and Method of Fabricating Same - A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device. | 11-19-2015 |
20150362381 | TEMPERATURE SENSOR - Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film, wherein the thin film thermistor portion is disposed on the distal end of the insulating film in a state of being bent into a substantially U-shape, and both ends of the insulating film are fixed to the pair of lead frames. | 12-17-2015 |
20150372162 | SENSOR ARRAY WITH SELF-ALIGNED OPTICAL CAVITIES - A sensing device includes an array of sensing elements. Each sensing element includes a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor. An individual reflector is formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation. | 12-24-2015 |
20150372216 | Thermodiode Element for a Photosensor for Infrared Radiation Measurement, Photosensor and Method for producing a Thermodiode Element - A thermodiode element for a photosensor of a thermocamera usable for infrared radiation measurement includes a semiconductor substrate that has a first layer, and a second layer adjoining the first layer. The first layer has a base doping zone, and the second layer has a side doping zone that is the same doping type as the base doping zone. The second layer also has a further doping zone that is arranged as an island in the side doping zone and that has a doping type that is opposite to the doping type of the base doping zone. The base doping zone is further arranged in the first layer so as to adjoin the further doping zone. | 12-24-2015 |
20150377813 | SEMICONDUCTOR GAS SENSOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity. | 12-31-2015 |
20150380627 | LID ASSEMBLY FOR THERMOPILE TEMPERATURE SENSING DEVICE IN THERMAL GRADIENT ENVIRONMENT - A temperature sensing device and method for fabrication of the temperature sensing device are described that include a second temperature sensor disposed on and/or in the lid assembly. In an implementation, the temperature sensing device includes a substrate, a ceramic structure disposed on the substrate, a thermopile disposed on the substrate, a first temperature sensor disposed on the substrate, and a lid assembly disposed on the ceramic structure, where the lid assembly includes a base layer, a first filter layer disposed on a first side of the base layer, a first metal layer disposed on a second side of the base layer, a passivation layer disposed on the first metal layer, where the passivation layer includes at least one of a second metal layer, a via, a metal plate, or an epoxy ring, and a second temperature sensor disposed on and/or in the passivation layer. | 12-31-2015 |
20160020377 | Wafer Level Package Structure for Temperature Sensing Elements - A wafer level package structure for temperature sensing elements, which includes a wafer cover and a substrate. The wafer cover is formed of infrared penetrable material. The wafer cover has a plurality of package walls, and the plurality of package walls form a plurality of first grooves and a plurality of second grooves in the wafer cover. The substrate includes a plurality of chip areas, a plurality of soldering areas, and a plurality of pin areas. The plurality of chip areas are disposed a temperature sensing chip respectively and correspond to the plurality of first grooves respectively and the plurality of soldering areas solder with respect to the plurality of package walls, such that the plurality of chip areas and the plurality of first grooves form a plurality of vacuum sealed spaces respectively. | 01-21-2016 |
20160056364 | Integrated Thermoelectric Generator - An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity. | 02-25-2016 |
20160079306 | Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber - A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector. | 03-17-2016 |
20160101974 | LOW-STRESS DOPED ULTRANANOCRYSTALLINE DIAMOND - Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications. | 04-14-2016 |
20160126127 | Adhesive Sheet, Method for Manufacturing Semiconductor Device Using Same, Method for Manufacturing Thermal Airflow Sensor Using Same, and Thermal Airflow Sensor - Provided is a thermal type airflow volume meter improving measurement accuracy, a method for manufacturing the same, and an adhesive sheet for use therein, the adhesive sheet divided into at least two or more per adherend and having a thickness of approximately 0.1 mm or less is divided to correspond to a shape of the adherend and generates or increases adhesion or stickiness by external energy. | 05-05-2016 |
20160133813 | On-Chip Thermoelectric Generator - An on-chip thermoelectric generator comprises an integrated circuit comprising a substrate and at least one thermocouple integrated with the substrate, wherein the thermocouple is configured to convert a temperature difference into a voltage. A metal bump or metal pillar is thermally connected to a portion of the thermocouple for generating the temperature difference. The metal bump or metal pillar is electrically insulated from said at least one thermocouple. The metal bump or metal pillar is electrically connected to a component of the integrated circuit which is different from the thermocouple. | 05-12-2016 |
20160159641 | ENVIRONMENT-RESISTANT MODULE, MICROPACKAGE AND METHODS OF MANUFACTURING SAME - An environment-resistant module which provides both thermal and vibration isolation for a packaged micromachined or MEMS device is disclosed. A microplatform and a support structure for the microplatform provide the thermal and vibration isolation. The package is both hermetic and vacuum compatible and provides vertical feedthroughs for signal transfer. A micromachined or MEMS device transfer method is also disclosed that can handle a wide variety of individual micromachined or MEMS dies or wafers, in either a hybrid or integrated fashion. The module simultaneously provides both thermal and vibration isolation for the MEMS device using the microplatform and the support structure which may be fabricated from a thin glass wafer that is patterned to create crab-leg shaped suspension tethers or beams. | 06-09-2016 |
20160163942 | MEMS-BASED WAFER LEVEL PACKAGING FOR THERMO-ELECTRIC IR DETECTORS - A device and techniques for fabricating the device are described for forming a wafer-level thermal sensor package using microelectromechanical system (MEMS) processes. In one or more implementations, a wafer level thermal sensor package includes a thermopile stack, which includes a substrate, a dielectric membrane, a first thermoelectric layer, a first interlayer dielectric, a second thermoelectric layer, a second interlayer dielectric, a metal connection assembly, a passivation layer, where the passivation layer includes at least one of a trench or a hole, and where the substrate includes a cavity adjacent to the at least one trench or hole, and a bond pad disposed on the passivation layer and electrically coupled to the metal connection assembly; and a cap wafer assembly coupled to the thermopile stack, the cap wafer assembly including a wafer having a cavity formed on a side of the wafer configured to be adjacent to the thermopile stack. | 06-09-2016 |
20160163965 | NANOMETER MAGNETIC MULTILAYER FILM FOR TEMPERATURE SENSOR AND MANUFACTURING METHOD THEREFOR - A magnetic multilayer film for a temperature sensor is disclosed. The magnetic multilayer film comprises: a bottom magnetic composite layer provided on a substrate, the bottom magnetic composite layer having a direct pinning structure, an indirect pinning structure, a synthetic ferromagnetic structure, or a synthetic anti-ferromagnetic structure; a spacer layer provided on the bottom magnetic composite layer; and a top magnetic composite layer provided on the spacer layer, the top magnetic composite layer having the direct pinning structure, the indirect pinning structure, the synthetic ferromagnetic structure, or the synthetic anti-ferromagnetic structure, wherein a ferromagnetic layer of the bottom magnetic composite layer closest to the spacer layer has a magnetic moment anti-parallel with that of a ferromagnetic layer of the top magnetic composite layer closest to the spacer layer. | 06-09-2016 |
20160181501 | DIFFERENTIAL TEMPERATURE SENSOR | 06-23-2016 |
20160181502 | DIFFERENTIAL TEMPERATURE SENSOR | 06-23-2016 |
20160200564 | SENSOR PACKAGE | 07-14-2016 |
20160254432 | THERMOELECTRIC ELEMENT, THERMOELECTRIC MODULE AND MANUFACTURING METHOD THEREOF | 09-01-2016 |
20180026075 | INTEGRATED CIRCUIT COMPONENTS INCORPORATING ENERGY HARVESTING COMPONENTS/DEVICES, AND METHODS FOR FABRICATION, MANUFACTURE AND PRODUCTION OF INTEGRATED CIRCUIT COMPONENTS INCORPORATING ENERGY HARVESTING COMPONENTS/DEVICES | 01-25-2018 |