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Temperature

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257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257414000 - RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
257467000 Temperature 89
20130026596FOCAL PLANE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method of forming a focal plane array by: preparing a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer; preparing a second wafer including read-out integrated circuit and a contact pad, which is covered by another sacrificial layer into which are formed support legs in contact with the contact pad, the support legs being covered with a further sacrificial layer; bonding the sacrificial layers of the first and second wafers together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; defining a pixel in the sensing material and forming a conductive via through the pixel for providing a connection between an uppermost surface of the pixel and the supporting legs; and removing the sacrificial layers to release the pixel, with the supporting legs underneath it.01-31-2013
20130026597METHOD OF GENERATING ELECTRICAL ENERGY IN AN INTEGRATED CIRCUIT DURING THE OPERATION OF THE LATTER, CORRESPONDING INTEGRATED CIRCUIT AND METHOD OF FABRICATION - An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.01-31-2013
20130037904PTC ELEMENT AND HEATING-ELEMENT MODULE - An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition.02-14-2013
20100117185Temperature sensor with buffer layer - A temperature sensor with a bandgap circuit is provided. The bandgap circuit is covered by a buffer layer of photoresist. The device is packaged in a housing. By providing the buffer layer, mechanical stress in the bandgap circuit, as it is e.g. caused by different thermal expansion coefficients of the packaging and the chip, can be reduced. This improves the accuracy of the device.05-13-2010
20130075853Stacked Die Package for MEMS Resonator System - A stacked die package for an electromechanical resonator system includes an electromechanical resonator die bonded or fixed to a control IC die for the electromechanical resonator by, for example, a thermally and/or electrically conductive epoxy. In various embodiments, the electromechanical resonator can be a micro-electromechanical system (MEMS) resonator or a nano-electromechanical system (NEMS) resonator. Certain packaging configurations that may include the chip that contains the electromechanical resonator and the control chip include chip-on-lead (COL), chip-on-paddle (COP), and chip-on-tape (COT) packages. The stacked die package may provide small package footprint and/or low package thickness, and low thermal resistance and a robust conductive path between the dice.03-28-2013
20130082345Hybrid FPA for Thz imaging with an antenna array, coupled to CMOS-MEMS thermal sensors, implementing per-pixel ES actuation and enabling tuning, correlated double sampling and AM modulation - A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor that couples energy from the antenna to the thermal sensor. The capacitor plates used for capacitive coupling of the received signal realize an electro-static actuator whereby the application of a DC bias varies the coupling capacitor gap. The DC bias causes the actuator to pull the suspended platform close to the antenna to reduce the capacitive gap, increasing the coupling capacitance, to touch the antenna array thus quickly discharging the heat induced in the sensor platform or to perform advanced readout operations, such as amplitude modulation and correlated double sampling.04-04-2013
20100327393Method and structures for etching cavity in silicon under dielectric membrane - A semiconductor device includes a semiconductor layer (12-30-2010
20100001361SUSPENDED GETTER MATERIAL-BASED STRUCTURE - Getter structure comprising a substrate and at least one getter material-based layer mechanically connected to the substrate by means of at least one support, in which the surface of the support in contact with the substrate is smaller than the surface of a first face of the getter material layer, in which said first face is in contact with the support, and a second face of the getter material layer, opposite said first face is at least partially exposed.01-07-2010
20120217608THERMOELECTRIC DEVICE USING SEMICONDUCTOR TECHNOLOGY - An integrated thermoelectric device in semiconductor technology comprising a hot side arranged in proximity to a heat source, and a cold side, providing a signal according to the temperature difference between the hot and cold sides. The hot and cold sides are arranged in such a way that their temperatures tend to equal out when the temperature of the heat source varies, i.e. when the sensor is in poor operating conditions. A measuring circuit provides useful information according to a continuously variable portion of the signal from a time when the temperature of the heat source varies. If the temperature of the heat source ceases to vary, the temperatures of the hot and cold sides eventually equal out and the signal is annulled and ceases to vary. The distance between the hot and cold sides can be less than 100 μm.08-30-2012
20130069194GRAPHENE-BASED THERMOPILE - Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate large output voltages using fewer thermocouples than conventional thermopile devices.03-21-2013
20130062722CHIP MODULE AND A METHOD FOR MANUFACTURING A CHIP MODULE - In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe area and at least partially on the second leadframe area.03-14-2013
20110304004THERMOELECTRIC ELEMENT MODULE AND MANUFACTURING METHOD - A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided.12-15-2011
20090189239Thermoelectric Module - A thermoelectric module has a first substrate, a second substrate spaced from the first substrate, a plurality of P type thermoelectric elements and N type thermoelectric elements arranged in the space between the first and second substrates, and a plurality of electrodes which connect the P type and N type thermoelectric elements in series. Each electrode is connected to a respective one of the plurality of P type thermoelectric elements at a first connection and a respective one of the plurality of N type thermoelectric elements in the space, and a sealant is located at an edge portion of the space. Each one of a series of first or outer electrodes closest to the edge portion of the space has a concave portion that is concaved in a direction departing from the edge portion of the space and is at a position between the first connection and the second connection.07-30-2009
20100032789PASSIVE TEMPERATURE COMPENSATION OF SILICON MEMS DEVICES - The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.02-11-2010
20120187519COOLING DEVICE FOR AN INTEGRATED CIRCUIT - A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane.07-26-2012
20110291222SILICON DIOXIDE CANTILEVER SUPPORT AND METHOD FOR SILICON ETCHED STRUCTURES - An apparatus includes a semiconductor layer (12-01-2011
20110298080METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE, AND THERMOELECTRIC CONVERSION MODULE - There is provided a method for manufacturing a thermoelectric conversion module that can yield a thermoelectric conversion module with a high insulating property and high density without requiring positioning of the thermoelectric conversion elements, as well as a thermoelectric conversion module manufactured by the method. The method for manufacturing a thermoelectric conversion module 12-08-2011
20100078753Flow Sensor and Method of Fabrication - A method for forming a flow sensor having self-supported heat-carrying elements is disclosed. Self-supported heat-carrying elements are capable of operating with higher thermal efficiency, enabling lower power consumption and higher sensitivity, due to a lack of heat loss into a supporting membrane. Self-supported heat-carrying elements facilitate wider operating temperature range and compatibility with harsh media.04-01-2010
20090140369SEMICONDUCTOR POWER MODULE PACKAGE WITHOUT TEMPERATURE SENSOR MOUNTED THEREON AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal.06-04-2009
20110198720THERMAL-TYPE INFRARED SOLID-STATE IMAGING ELEMENT - A thermal-type infrared solid-state imaging element is provided with a pixel having a diaphragm (08-18-2011
20090289321Thermal sensing and reset protection for an integrated circuit chip - There is provided a semiconductor package that includes a first semiconductor die mounted on a package substrate. The semiconductor package further includes a second semiconductor die mounted on the first semiconductor die and including a thermal sensing and reset protection circuit. The thermal sensing and reset protection circuit is configured to determine a temperature of the first semiconductor die and to provide a reset protection signal to the first semiconductor die when the temperature of the first semiconductor die is substantially equal to a preset temperature so as to protect the first semiconductor die from thermal runaway. The reset protection signal can cause the first semiconductor die to be in a sleep mode or a reset state.11-26-2009
20110169123BARIUM TITANATE-BASED SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR - Provided is a barium titanate-based semiconductor ceramic composition which contains no Pb, which can have an increased Curie temperature, which exhibits slight deterioration with time, and which has high reliability, containing a barium titanate-based semiconductor ceramic represented by the composition formula (Ba07-14-2011
20130119504Thermal Airlflow Sensor - An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film 05-16-2013
20110006388SEMICONDUCTOR DEVICE - A semiconductor device which can actively dissipate heat in response to operation is provided. A Seebeck element 01-13-2011
20090026570Methods and structures for discharging plasma formed during the fabrication of semiconuctor device - Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure.01-29-2009
20120139077METHOD AND APPARATUS FOR REDUCING THERMOPILE VARIATIONS - Here, an apparatus is provided. The apparatus generally comprises a substrate and a thermopile. The thermopile includes a cavity that is etched into the substrate, a functional area that is formed over the substrate (where the cavity is generally coextensive with the functional area), and a metal ring formed over the substrate along the periphery of the functional area (where the metal ring is thermally coupled to the substrate).06-07-2012
20090230499Sensor device - A sensor device for sensing air flow speed at the exterior of an aircraft, comprising a substrate having an upper side on which is mounted a diaphragm over an aperture or recess in the substrate, the diaphragm being thermally and electrically insulative, and mounting on its upper surface a heating element comprising a layer of resistive material, and wherein electrical connections to the heating element are buried in the diaphragm and/or the substrate, and provide electrical terminals at the lower side of the substrate. The heating element is exposed to the environment, but the remaining electrical parts of the device are not exposed.09-17-2009
20100001360LEVEL POSTURE SENSING CHIP AND ITS MANUFACTURING METHOD, LEVEL POSTURE SENSOR - The present invention discloses a gas pendulum style level posture sensing chip and its manufacturing method and a level posture sensor. The gas pendulum style level posture sensing chip includes: a semiconductor substrate; two sets of arm thermosensitive fuses formed on the surface of the semiconductor substrate, each set of the thermosensitive fuses including two thermosensitive fuses in parallel to each other, the two sets of thermosensitive fuses being vertical to each other; electrodes formed at the two ends of the thermosensitive fuses. For the level posture sensing chip and sensor provided by the present invention, the parallelism and verticality of the thermosensitive fuses is high in precision such that the more accurate measurement can be implemented.01-07-2010
20120139075THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler is configured to direct heat through channels of the cooler. The thermoelectric cooler has multiple electrodes and a first dielectric material positioned between side surfaces of the electrodes. A second dielectric material, different from the first dielectric material, is in contact with top surfaces of the electrodes. The first dielectric material extends above the top surface of the electrodes, separating portions of the second dielectric material, and is in contact with a portion of the top surfaces of the electrodes. The first dielectric material has a thermal conductivity different than a thermal conductivity of the second dielectric material. A ratio of the first dielectric material to the second dielectric material in contact with the top surface of the electrodes may be selected to control the heat retention. The semiconductor thermoelectric cooler may be manufactured using thin film technology.06-07-2012
20110057285Sensor for detecting thermal radiation - A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.03-10-2011
20110241153METHOD FOR THIN FILM THERMOELECTRIC MODULE FABRICATION - Methods of fabrication of a thermoelectric module from thin film thermoelectric material are disclosed. In general, a thin film thermoelectric module is fabricated by first forming an N-type thin film thermoelectric material layer and one or more metallization layers on a substrate. The one or more metallization layers and the N-type thin film thermoelectric material layer are etched to form a number of N-type thermoelectric material legs. A first electrode assembly is then bonded to a first portion of the N-type thermoelectric material legs, and the first electrode assembly including the first portion of the N-type thermoelectric material legs is removed from the substrate. In a similar manner, a second electrode assembly is bonded to a first portion of a number of P-type thermoelectric material legs. The first and second electrode assemblies are then bonded using a flip-chip bonding process to complete the fabrication of the thermoelectric module.10-06-2011
20110241154OPTICAL SENSOR - In an infrared sensor (10-06-2011
20110042774Film Sensor and Method for Producing a Film Sensor - A film sensor having a first carrier film with at least one first conductor track is disclosed. The film sensor has a second carrier film which has at least one second conductor track. At least one electrical component is arranged between the first carrier film and the second carrier film. The electrical component has the properties of a functional ceramic. The electrical component is electrically contact-connected by means of at least one first conductor track and at least one second conductor track.02-24-2011
20090026571SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes first pixels and second pixels. Each of the first pixels and the second pixels includes a p-type diffusion layer formed in a semiconductor substrate and an n-type diffusion layer formed on the p-type diffusion layer. A first p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the first pixels. A second p-type implantation layer having a lower impurity concentration than the first p-type implantation layer or no p-type implantation layer is formed on a surface side of the semiconductor substrate on the n-type diffusion layer of the second pixels.01-29-2009
20110210414Infrared sensor - An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate.09-01-2011
20100283114CHIP-TYPE SEMICONDUCTOR CERAMIC ELECTRONIC COMPONENT - A chip-type semiconductor ceramic electronic component including a ceramic body made of a semiconductor ceramic, first external electrodes formed on opposite end surfaces of the ceramic body, and second external electrodes extending to cover surfaces of the first external electrodes and part of side surfaces of the ceramic body. A curvature radius of a corner portion of the ceramic body is R (μm), a maximum thickness of a layer of the first external electrode layer, which is in contact with the ceramic body, measured from the end surface of the ceramic body is y (μm), and a minimum thickness of a layer of the second external electrode, which is in contact with the side surface of the ceramic body, measured from an apex of the corner portion of the ceramic body is x (μm), and 20≦R≦50, −0.4 x+0.6≦y≦0.4 is satisfied when 0.5≦x≦1.1, and −0.0076 x+0.16836≦y≦0.4 is satisfied when 1.1≦x≦9.0.11-11-2010
20110073984SEMICONDUCTOR POWER MODULE PACKAGE WITH TEMPERATURE SENSOR MOUNTED THEREON AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal.03-31-2011
20110186956ELECTRICALLY CONDUCTIVE POLYMER COMPOSITE AND THERMOELECTRIC DEVICE USING ELECTRICALLY CONDUCTIVE POLYMER MATERIAL - An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle.08-04-2011
20130221475SEMICONDUCTOR CERAMIC AND RESISTIVE ELEMENT - Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R108-29-2013
20110095390THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT - The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A04-28-2011
20110316113PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element, a support member, and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body disposed between the first and second electrodes, and a first reducing gas barrier layer that protects the capacitor from reducing gas. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support member has a mounting member on which the capacitor is mounted and an arm member linked to the mounting member. The support part supports a portion of the support member. An outer peripheral edge of the first reducing gas barrier layer is disposed between and spaced apart from an outer peripheral edge of the mounting member and an outer peripheral edge of the capacitor in plan view.12-29-2011
20110316111PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element mounted on a first side of a support member with a second side facing a cavity. The pyroelectric detection element has a capacitor including a first electrode, a pyroelectric body and a second electrode, and an interlayer insulation layer forming first and second contact holes passing respectively through to the first and second electrodes. First and second plugs are respectively embedded in the first and second contact holes, with first and second electrode wiring layers are respectively connected to the first and second plugs. A thermal conductivity of material of the second electrode wiring layer is lower than a thermal conductivity of material of a portion of the second electrode connected to the second plug.12-29-2011
20110316112PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction.12-29-2011
20120007205INFRARED IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.01-12-2012
20120025343THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE - A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section.02-02-2012
20120211858THERMAL DETECTOR, THERMAL DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light.08-23-2012
20100289108Silicon dioxide cantilever support and method for silicon etched structures - A semiconductor device includes a semiconductor layer (11-18-2010
20120211857PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a substrate, a support member and a pyroelectric detection element, which includes a capacitor, first and second reducing gas barrier layers, an insulating layer, a plug and a second electrode wiring layer. The first reducing gas barrier layer covers at least a second electrode and a pyroelectric body of the capacitor, and has a first opening that overlaps the second electrode in plan view. The insulating layer covers at least the first reducing gas barrier layer, and has a second opening that overlaps the first opening in plan view. The plug is disposed in the first and second openings and connected to the second electrode. The second electrode wiring layer is formed on the insulating layer and connected to the plug. The second reducing gas barrier layer is formed on the insulating layer and the second electrode wiring layer and covers at least the plug.08-23-2012
20120161273THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An M06-28-2012
20120248564Dual Compartment Semiconductor Package with Temperature Sensor - According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package.10-04-2012
20120175723INFRARED IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.07-12-2012
20120074514ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT - A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.03-29-2012
20120181651Temperature Sensor Based on Magnetic Tunneling Junction Device - A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection.07-19-2012
20120228733MEMS-BASED GETTER MICRODEVICE - A MEMS (micro-electro-mechanical system) getter microdevice for controlling the ambient pressure inside the hermetic packages that enclose various types of MEMS, photonic, or optoelectronic devices. The getter microdevice revolves around a platform suspended at a height above a substrate, and which is supported by supporting legs having low thermal conductance. Layers are deposited on the platform, such layers including a properly patterned resistor element, a heat-spreading layer and, finally, a thin-film getter material. When an electrical current flows through it, the resistor element heats the thin-film getter material until it reaches its activation temperature. The getter material then absorbs the gas species that could be present in the hermetic package, such gas species possibly impairing the operation of the devices housed in the packages while reducing their lifetime. The weak thermal conductance between the platform and the substrate helps in preventing damages to the surrounding devices when the MEMS getter microdevice is heated at its activation temperature, and it reduces the electrical power required for reaching the activation temperature as well.09-13-2012
20120261785SHARED MEMBRANE THERMOPILE SENSOR ARRAY - A thermopile sensor array is provided. The thermopile sensor array may include multiple pixels formed by multiple thermopiles arranged on a single common shared support membrane. A separation between the edge of the shared support membrane and the outermost thermopile(s) may be included to provide additional thermal isolation between the thermopile and an underlying silicon substrate.10-18-2012
20120319226FABRICATION OF ROBUST ELECTROTHERMAL MEMS WITH FAST THERMAL RESPONSE - Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror.12-20-2012
20120091553Method for Detecting the Repackaging of an Integrated Circuit after it has been Originally Packaged, and Corresponding Integrated Circuit - An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.04-19-2012
20120139078Microbolometer Semiconductor Material - A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate (06-07-2012
20120139076THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology.06-07-2012
20130015548INTEGRATED CIRCUIT WITH TEMPERATURE INCREASING ELEMENT AND ELECTRONIC SYSTEM HAVING THE SAMEAANM Chen; Hsieh-ChunAACI Taichung CityAACO TWAAGP Chen; Hsieh-Chun Taichung City TWAANM Chen; Tsang-YiAACI New Taipei CityAACO TWAAGP Chen; Tsang-Yi New Taipei City TW - To provide an integrated circuit with functionality under environment with temperature lower than a working condition, the integrated circuit is designed to include a heating element incorporated with signal pins on a carrier, such as a lead frame, that supports a chip die and controlled by a heating control unit to increase temperature of the chip die. The heating control unit provides voltage for the heating element when a detecting unit detects that the temperature of the chip die falls below a predetermined temperature and a power control unit provide operation power for the chip die when the temperature of the chip die detected by the detecting unit reaches or falls above the predetermined temperature.01-17-2013
20130015549Integrated Thermoelectric GeneratorAANM Fornara; PascalAACI PourrieresAACO FRAAGP Fornara; Pascal Pourrieres FRAANM Rivero; ChristianAACI RoussetAACO FRAAGP Rivero; Christian Rousset FR - An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity.01-17-2013
20130020670TEMPERATURE SENSOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND TEMPERATURE SENSOR - A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element α having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element α in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from −50° C. to 1050° C.01-24-2013
20080230866RFID TEMPERATURE SENSING WAFER, SYSTEM AND METHOD - A system and method for manufacturing semiconductor wafers comprising an RFID temperature sensor and generally described herein. Other embodiments may be described and claimed.09-25-2008
20130168798CHIP PACKAGE STRUCTURE - A first back surface of a first chip faces toward a carrier. A first active surface of the first chip has first pads and a first insulting layer thereon. A second chip is disposed on the first chip and electrically connected to the carrier. A second active surface of the second chip faces toward the first active surface. The second active surface has second pads and a second insulting layer thereon. Bumps connect the first and second pads. First and second daisy chain circuits are respectively disposed on the first and second insulting layers. Hetero thermoelectric device pairs are disposed between the first and second chips and connected in series by the first and second daisy chain circuits, and constitute a circuit with an external device. First and second heat sinks are respectively disposed on a second surface of the carrier and a second back surface of the second chip.07-04-2013
20130175654BULK NANOHOLE STRUCTURES FOR THERMOELECTRIC DEVICES AND METHODS FOR MAKING THE SAME - Array of nanoholes and method for making the same. The array of nanoholes includes a plurality of nanoholes. Each of the plurality of nanoholes corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 μm. Each of the plurality of nanoholes corresponds to a cross-sectional area associated with a distance across, and the distance across ranges from 5 nm to 500 nm. Each of the plurality of nanoholes is separated from at least another nanohole selected from the plurality of nanoholes by a semiconductor material associated with a sidewall thickness, and the sidewall thickness ranges from 5 nm to 500 nm.07-11-2013
20130147004Integrated Capacitive Device Having a Thermally Variable Capacitive Value - An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances.06-13-2013
20110210415FREESTANDING CARBON NANOTUBE NETWORKS BASED TEMPERATURE SENSOR - The present invention introduces a small-size temperature sensor, which exploits a random or oriented network of un-functionalized, single or multi-walled, carbon nanotubes to monitor a wide range of temperatures. Such network is manufactured in the form of freestanding thin film with an electric conductance proven to be a monotonic function of the temperature, above 4.2 K. Said carbon nanotube film is wire-connected to a high precision source-measurement unit, which measures its electric conductance by a standard two or four-probe technique. Said temperature sensor has a low power consumption, an excellent stability and durability, a high sensitivity and a fast response; its manufacturing method is simple and robust and yields low-cost devices. Said temperature sensor, freely scalable in dimension, is suitable for local accurate measurements of rapidly and widely changing temperatures, while introducing a negligible disturb to the measurement environment.09-01-2011
20130134544ENERGY HARVESTING IN INTEGRATED CIRCUIT PACKAGES - An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone.05-30-2013
20110233710PYROELECTRIC DETECTOR, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A pyroelectric detector includes a support member, a capacitor and a fixing part. The support member includes a first side and a second side opposite from the first side, with the first side facing a cavity. The capacitor includes a pyroelectric body between a first electrode and a second electrode such that an amount of polarization varies based on a temperature. The capacitor is mounted and supported on the second side of the support member with the first electrode being disposed on the second side of the support member. A thermal conductance of the first electrode is less than a thermal conductance of the second electrode. The fixing part supports the support member.09-29-2011
20110304005RESONATOR ELEMENT AND RESONATOR PIXEL FOR MICROBOLOMETER SENSOR - A resonator element for the absorption and/or conversion of electromagnetic waves having a predefined wavelength, in particular infrared radiation having a wavelength of 2 μm to 200 μm, into heat, has a three-layer structure formed of a first metal layer, a second metal layer and a dielectric layer interposed between the two metal layers. The maximum lateral dimension of the layers is in the range between one quarter and a half of the predefined wavelength.12-15-2011
20110309463ELECTROCALORIC EFFECT MATERIALS AND THERMAL DIODES - Examples are generally described that include a substrate, an electrocaloric effect material at least partially supported by the substrate, and a thermal diode at least partially supported by the electrocaloric effect material.12-22-2011
20130187252BONDPAD INTEGRATED THEROMELECTRIC COOLER - An integrated circuit has thermoelectric cooling devices integrated into bondpads. A method for operating the integrated circuit includes turning a thermal switch to a thermoelectric cooler operate position when the integrated circuit is powered up, turning the thermal switch to a thermoelectric cooler operate position to allow the thermoelectric cooler to operate when the integrated circuit powers down, and turning the thermal switch to a thermoelectric cooler off position when a predetermined integrated circuit chip temperature is reached.07-25-2013
20120068296SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value:03-22-2012
20120086098IONIC ISOLATION RING - There has been very little (if any) attention to address contamination diffusion within an integrated circuit (IC) because there are very few applications where a protective overcoat will be penetrated as part of the manufacturing process. Here, a sealing ring is provided that address this problem. Preferably, the sealing ring uses the combination of electrically conductive barrier rings and the tortuous migration path to allow an electronic device (i.e., thermopile), where a protective overcoat is penetrated during manufacture, to communicate with external devices while being isolated to prevent contamination.04-12-2012
257468000 Semiconductor device operated at cryogenic temperature 1
20110037138Semiconductor Device having variable parameter selection based on temperature and test method - A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.02-17-2011
257470000 Pn junction adapted as temperature sensor 14
20120217609SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device includes a stacked body with a recessed gas passage formed therein, a heater disposed in the stacked body, the heater being exposed on a bottom surface of the gas passage, and a plurality of thermal sensors disposed in the stacked body in such a manner that the plurality of thermal sensors sandwich the heater therebetween in an extending direction of the gas passage, the plurality of thermal sensors being exposed on the bottom surface of the gas passage. An acceleration sensor having a high affinity to the ordinary semiconductor manufacturing process can be provided.08-30-2012
20080237772SEMICONDUCTOR DEVICE AND TEMPERATURE SENSOR STRUCTURE FOR A SEMICONDUCTOR DEVICE - A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.10-02-2008
20090166794TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES DISTRIBUTED IN THE CONTACT STRUCTURE - By forming thermocouples in a contact structure of a semiconductor device, respective extension lines of the thermocouples may be routed to any desired location within the die, without consuming valuable semiconductor area in the device layer. Thus, an appropriate network of measurement points of interest may be provided, while at the same time allowing the application of well-established process techniques and materials. Hence, temperature-dependent signals may be obtained from hot spots substantially without being affected by design constraints in the device layer.07-02-2009
20090206438Semiconductor component - A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.08-20-2009
20090230500Semiconductor device - A semiconductor device equipped with a primary semiconductor element and a temperature detecting element for detecting a temperature of the primary semiconductor element. The device includes a first semiconductor layer of a first conductivity type that forms the primary semiconductor element. A second semiconductor region of a second conductivity type is provided in the first semiconductor layer. A third semiconductor region of the first conductivity type is provided in the second semiconductor region. The temperature detecting element is provided in the third semiconductor region and is separated from the first semiconductor layer by a PN junction.09-17-2009
20110241155SEMICONDUCTOR THERMOCOUPLE AND SENSOR - Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.10-06-2011
20110248374UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME - This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.10-13-2011
20110062545SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device in accordance with the present invention includes a diode 03-17-2011
20080283955Temperature Sensing Device - The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.11-20-2008
20120061791INFRARED DETECTION DEVICE - According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.03-15-2012
20090152666THERMOELECTRIC SEMICONDUCTOR DEVICE - A thermoelectric semiconductor device includes a plurality of alternating P-type and N-type semiconductor elements disposed between first and second ceramic layers, first conductor elements attached to the first ceramic layer and interconnecting cold junctions of the P-type and N-type semiconductor elements, and second conductor elements attached to the second ceramic layer and interconnecting hot junctions of the P-type and N-type semiconductor elements. A thermal insulation material made from ammonium phosphate is filled in gaps between the first and second ceramic layers and the P-type and N-type semiconductor elements so that the temperature difference between the hot and cold junctions can be maximized06-18-2009
20110210416POLARIZATION ALIGNED AND POLARIZATION GRADED THERMOELECTRIC MATERIALS AND METHOD OF FORMING THEREOF - Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first volume and form a single anisotropic crystal. The first volume has a first outer surface and a second outer surface opposite the first outer surface, with the outer surfaces defining the central axis passing through a bulk. The bulk polarization field is formed from a first electrical sheet charge and a second opposing electrical sheet charge, one on each atomic plane. The opposing sheet charges define a bulk polarization field aligned with the central axis, and the bulk polarization field causes asymmetric thermal and electrical conductivity through the first volume along the central axis.09-01-2011
20090212386MEMS DEVICE AND METHOD OF MAKING SAME - A MEMS device includes a P-N device formed on a silicon pin, which is connected to a silicon sub-assembly, and where the P-N device is formed on a silicon substrate that is used to make the silicon pin before it is embedded into a first glass wafer. In one embodiment, forming the P-N device includes selectively diffusing an impurity into the silicon pin and configuring the P-N device to operate as a temperature sensor.08-27-2009
20120018835Thermoelectric Conversion Module - A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrode 01-26-2012

Patent applications in class Temperature

Patent applications in all subclasses Temperature