Class / Patent application number | Description | Number of patent applications / Date published |
257448000 | With particular electrode configuration | 58 |
20080230864 | Image Sensor and Method for Manufacturing the Same - Disclosed is an image sensor which includes a plurality of pixel patterns formed on corresponding metal interconnections of an interlayer dielectric and a dummy pixel pattern formed between adjacent pixel patterns of the plurality of the pixel patterns. The dummy pixel patterns are not formed connected to the metal interconnections. The dummy pixel patterns can be formed spaced a distance apart from the plurality of pixel patterns such that air gaps form between the dummy pixel patterns and the pixel patterns in an intrinsic layer that is formed on the dummy pixel pattern and the plurality of pixel patterns. | 09-25-2008 |
20080237770 | RADIATION DETECTOR - A radiation detector that includes a charge conversion layer, a substrate, an electrode layer, an intermediary layer and wiring is provided. The substrate includes a lower electrode portion that collects charge generated by the charge conversion layer. The electrode layer includes an upper electrode portion and an extended electrode portion. The upper electrode portion is laminated on the charge conversion layer. The extended electrode portion extends from the upper electrode portion down a side face of the charge conversion layer to a region on the substrate at which the charge conversion layer is not present. The intermediary layer is formed from between the charge conversion layer and the upper electrode portion to between the extended electrode portion and the substrate. The wiring is electrically connected with the extended electrode portion at the region on the substrate at which the charge conversion layer is not present. | 10-02-2008 |
20090108391 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate. | 04-30-2009 |
20090134485 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a semiconductor substrate including a pixel region and a peripheral circuit region; interlayer insulating films including metal wires arranged on the pixel region and the peripheral circuit region; and a photodiode and an upper electrode disposed on the interlayer insulating film of the pixel region. Further, the image sensor includes a protective layer disposed on the semiconductor substrate including the upper electrode and the interlayer insulating film of the peripheral circuit region and having a sloping portion in a region corresponding to the sidewall of the photodiode; via holes disposed on the protective layer so as to selectively expose the upper electrode and the metal wires of the peripheral circuit region; and upper wiring disposed on the protective layer including the via holes. | 05-28-2009 |
20090174022 | Hyperspectral imaging device - An hyperspectral imaging device comprising semiconductor nanocrystals is provided. | 07-09-2009 |
20100059846 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are image sensors and methods of manufacturing the same. An image sensor includes a metal line and an interlayer insulation layer on a semiconductor substrate including a readout circuit; an image detection unit on the interlayer insulation layer and including stacked first and second doping layers; a pixel separation unit penetrating the image detection unit, separating the image detection unit by pixel; a first metal contact penetrating the image detection unit and the interlayer insulation layer to contact the metal line; a first barrier pattern protecting the first metal contact from contacting the second doping layer, while exposing the first metal contact to the first doping layer; and a second metal contact in a trench above the first metal contact, wherein the second metal contact is electrically connected to the second doping layer while being isolated from the first metal contact by a second barrier pattern. | 03-11-2010 |
20100065939 | THIN ACTIVE LAYER FISHBONE PHOTODIODE WITH A SHALLOW N+ LAYER AND METHOD OF MANUFACTURING THE SAME - The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. | 03-18-2010 |
20100148296 | SOLID STATE IMAGING DEVICE - Storage capacitors Ctd and Cts are provided alternately side by side sequentially in a row direction. Each of the storage capacitors Ctd and Cts has an electrode layer | 06-17-2010 |
20110024864 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a through electrode penetrating a semiconductor substrate, a conductor pad formed on the through electrode and made of a conductor electrically connected to the through electrode, and an interconnection layer formed on a surface of the semiconductor substrate and electrically connected to the conductor pad. | 02-03-2011 |
20110057283 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE - To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member. | 03-10-2011 |
20110089518 | Array of concentric CMOS photodiodes for detection and de-multiplexing of spatially modulated optical channels - An octagonal structure of photodiodes using standard CMOS technology has been developed to serve as a de-multiplexer for spatially multiplexed fiber optic communication systems. | 04-21-2011 |
20110156198 | Method of fabricating patterned CZT and CdTe devices - A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications. | 06-30-2011 |
20110163405 | Image Sensor with Pixel Wiring to Reflect Light - An image sensor with a plurality of photodiode pixels supported by a substrate. At least one of the photodiode pixels includes a reflective element that prevents light from traveling onto an adjacent photodiode pixel. The reflective element may be a floating contact on a dielectric barrier that insulates the contact from a substrate. The reflective element may be a via that may or may not be an essential part of an electrical connection between two or more integrated devices. The reflective element may be elongated in a horizontal section parallel to the substrate to maximize the reflective surface area and thus longer than standard vias and contacts. The reflective element may be non-rectilinear. The via may be directly above but insulated from a conductor by a dielectric layer thinner than an inter-metal dielectric (IMD) thickness between interconnect layers, and may straddle one or more conductors. | 07-07-2011 |
20110215433 | SOLID STATE IMAGING DEVICE AND SOLID STATE IMAGING DEVICE MANUFACTURING METHOD - According to one embodiment, a solid state imaging device includes a first photoelectric conversion film disposed above a semiconductor substrate, a first common electrode pattern which covers a first portion of the first photoelectric conversion film and has an opening pattern corresponding to a second portion of the first photoelectric conversion film, an insulating film which covers the first common electrode pattern and covers the second portion of the first photoelectric conversion film via the opening pattern, a pixel electrode pattern which covers the insulating film, a second photoelectric conversion film which covers the pixel electrode pattern, a second common electrode pattern which covers the second photoelectric conversion film, and a contact plug which penetrates through the insulating film and the second portion of the first photoelectric conversion film so as to electrically connect the pixel electrode pattern and the semiconductor substrate, wherein the width of the opening pattern is larger than the width of the contact plug. | 09-08-2011 |
20110227186 | IMAGE SENSOR PACKAGE AND FABRICATION METHOD THEREOF - An image sensor package includes an image sensor die having an active side and a backside, wherein an image sensor device region and a bond pad are provided on the active side. A through-silicon-via (TSV) structure extending through the thickness of the image sensor die is provided to electrically connect the bond pad. A multi-layer re-distributed interconnection structure is provided on the backside of the image sensor die. A solder mask or passivation layer covers the multi-layer re-distributed interconnection structure. | 09-22-2011 |
20110260279 | Semiconductor Device Connection - A method of bonding a semiconductor structure to a substrate to effect both a mechanical bond and a selectively patterned conductive bond, comprising the steps of mechanically bonding a semiconductor structure to a substrate by means of a bonding layer; providing gaps in the bonding layer generally corresponding to a desired conductive bond pattern; providing vias though the substrate generally positioned at the gaps in the bonding layer; causing electrically conductive material to contact the semiconductor structure exposed through the vias. A device made in accordance with the method is also described. | 10-27-2011 |
20120133015 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer a second semiconductor layer of a second conductivity type, the second semiconductor layer on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided on the light-receiving side of the second semiconductor layer; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element. | 05-31-2012 |
20120181650 | RANGE SENSOR AND RANGE IMAGE SENSOR - A range image sensor | 07-19-2012 |
20120217607 | WIRING BOARD WITH BUILT-IN IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - A wiring board with a built-in imaging element includes a substrate having an accommodation portion and a first surface and a second surface on the opposite side of the first surface, an imaging device having a light receiver and positioned in the accommodation portion of the substrate such that the light receiver faces the first surface of the substrate, and a buildup structure formed on the first surface of the substrate and having insulation layers and conductive layers. The buildup structure has an opening portion formed such that the light receiver of the imaging device is exposed from the opening portion of the buildup structure, and the insulation layers in the buildup structure include a first insulation layer formed on the first surface of the substrate. | 08-30-2012 |
20120235272 | RANGE SENSOR AND RANGE IMAGE SENSOR - A range image sensor | 09-20-2012 |
20120280350 | BARRIER DEVICE POSITION SENSITIVE DETECTOR - According to one embodiment, a position sensitive detector (PSD) comprises a plurality of layers, including a substrate layer, an absorber layer, a barrier layer, a sheet layer, and a contact layer. The absorber layer absorbs incident photons such that the absorbed photons excite positive charges and negative charges in the absorber layer. The barrier layer collects a photocurrent from the absorber layer, the photocurrent comprising either the positive charges or the negative charges. The sheet layer provides resistance to control the flow of the photocurrent between a point of incidence of the photons and a plurality of interconnect contacts. The contact layer comprises the interconnect contacts, each interconnect contact operable to conduct the photocurrent to one or more electrical components external to the PSD. The position sensitive detector facilitates determining the point of incidence of the photons according to a relative amount of photocurrent associated with each interconnect contact. | 11-08-2012 |
20120292731 | LIGHT-RECEIVING DEVICE ALLAY, OPTICAL RECEIVER MODULE, AND OPTICAL TRANSCEIVER - A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode. | 11-22-2012 |
20120313211 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 12-13-2012 |
20130009269 | ALIGNMENT MARKS AND ALIGNMENT METHODS FOR ALIGNING BACKSIDE COMPONENTS TO FRONTSIDE COMPONENTS IN INTEGRATED CIRCUITS - An imaging system may include an imager integrated circuit with frontside components such as imaging pixels and backside components. The imager integrated circuit may also include mirrored alignment marks formed with the frontside components. As part of forming the backside components, the integrated circuit may be flipped over such that the mirrored alignment marks are no longer mirrored and are readable by alignment systems. The formerly mirrored alignment marks may be used by the alignment systems in aligning the backside components with the frontside components in the imager integrated circuit (e.g., in forming the backside components in alignment with the frontside components). | 01-10-2013 |
20130026595 | SEMICONDUCTOR LIGHT-RECEIVING DEVICE - A semiconductor light-receiving device includes a semiconductor light-receiving element that has a first electrode and a second electrode, a first wiring coupled to the first electrode, and a second wiring coupled to the second electrode, a width of the second wiring being smaller than a width of the first wiring. | 01-31-2013 |
20130062721 | SEMICONDUCTOR STRIP DETECTOR - The present invention provides a semiconductor strip detector that can reduce noise generated from floating capacitance between electrodes while maintaining high detection efficiency. The semiconductor strip detector for detecting radiation includes: a substrate integrally formed from semiconductor and receiving incident radiation; a first electrode group made up of a plurality of strip-shaped electrodes to provided in parallel to each other on a major surface of the substrate; and a second electrode group made up of a plurality of strip-shaped electrodes to provided coaxially with an orthogonal projection of the plurality of strip-shaped electrodes to of the first electrode group onto the major surface of the substrate, and the electrode groups are formed so that a ratio of a longitudinal length to an electrode-to-electrode length is 10 or more. Therefore, noise can be sufficiently reduced while a detection range is being maintained. | 03-14-2013 |
20130134543 | CMOS Image Sensor Big Via Bonding Pad Application for AICu Process - An integrated circuit includes a substrate having a bonding pad region and a non-bonding pad region. A relatively large via, called a “big via,” is formed on the substrate in the bonding region. The big via has a first dimension in a top view toward the substrate. The integrated circuit also includes a plurality of vias formed on the substrate in the non-bonding region. The plurality of vias each have a second dimension in the top view, the second dimension being substantially less than the first dimension. | 05-30-2013 |
20130168796 | PHOTODIODE ARRAYS AND METHODS OF FABRICATION - Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes. | 07-04-2013 |
20130168797 | METHOD AND STRUCTURE FOR USING DISCONTINUOUS LASER SCRIBE LINES - A thin film photovoltaic device includes a substrate and a first conductive layer coupled to the substrate. The first conductive layer includes at least one first groove extending through a first portion of the first conductive layer to a portion of the substrate. The device also includes at least one semiconductor layer coupled to a remaining portion of the first conductive layer and the portion of the substrate. The at least one semiconductor layer includes a plurality of non-overlapping vias, each via extending through a portion of the at least one semiconductor layer to a portion of the first conductive layer. The device further includes a second conductive layer coupled to a remaining portion of the at least one semiconductor layer and portions of the first conductive layer. The second conductive layer includes at least one second groove extending through a portion of the second conductive layer to a portion of the at least one semiconductor layer. | 07-04-2013 |
20130228889 | SILICON PHOTOELECTRIC MULTIPLIER WITH MULTIPLE READ-OUT - A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a ring-like line, wherein the plurality of cells may be divided into a number of segments, and each one of the read-out lines may be electrically connected with the cells of at least one segment. | 09-05-2013 |
20130285189 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli. | 10-31-2013 |
20140001591 | PHOTODIODE CARRIER AND PHOTO SENSOR USING THE SAME | 01-02-2014 |
20140061842 | Multiple Metal Film Stack in BSI Chips - A method includes forming an opening extending from a back surface of a semiconductor substrate to a metal pad on a front side of the semiconductor substrate, and forming a first conductive layer including a first portion overlapping active image sensors in the semiconductor substrate, a second portion overlapping black reference image sensors in the semiconductor substrate, and a third portion in the opening to contact the metal pad. A second conductive layer is formed over and contacting the first conductive layer. A first patterning step is performed to remove the first and the second portions of the second conductive layer, wherein the first conductive layer is used as an etch stop layer. A second patterning step is performed to remove a portion of the first portion of the first conductive layer. The second and the third portions of the first conductive layer remain after the second patterning step. | 03-06-2014 |
20140061843 | High Speed Backside Illuminated, Front Side Contact Photodiode Array - The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region. | 03-06-2014 |
20140117486 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state imaging apparatus having a plurality of pixels, comprising: a substrate; a wiring layer formed on the substrate and including an insulating film and a plurality of wires; a plurality of lower electrodes formed on the wiring layer in one-to-one correspondence with the plurality of pixels; a photoelectric conversion film formed covering the plurality of lower electrodes; a light-transmissive upper electrode formed on the photoelectric conversion film; and a shield electrode extending through a gap between each pair of adjacent lower electrodes among the plurality of lower electrodes, the shield electrode having a fixed potential and being electrically insulated from the plurality of lower electrodes. | 05-01-2014 |
20140124889 | DIE SEAL RING FOR INTEGRATED CIRCUIT SYSTEM WITH STACKED DEVICE WAFERS - An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer. | 05-08-2014 |
20140217543 | INGAAS PHOTODIODE ARRAY - The invention relates to an InGaAs photodiode army ( | 08-07-2014 |
20140252530 | Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition - Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided. | 09-11-2014 |
20140284752 | DETECTOR STRUCTURE FOR IMAGING APPLICATIONS AND RELATED METHOD OF MANUFACTURE - A hybrid pixel detector structure including a plurality of detector entities, each detector entity including at least one read-out element, such as a read-out ASIC, and an overlapping substantially edgeless radiation sensitive detector volume, these two being electrically coupled utilizing a number of conductive elements in between, further including a substrate, such as a circuit board, or multiple substrates such as one per detector entity, for accommodating the plurality of detector entities, wherein the substantially edgeless detector volume of at least one detector entity of the plurality includes an overhang portion outside the overlap between the detector volume and the read-out element, and the read-out element of at least one other detector entity of the plurality includes an extension portion, also outside the overlap, with a number of electrical coupling elements to electrically couple to the substrate, such as conductors and/or electronics thereof. A corresponding method of manufacture is presented. | 09-25-2014 |
20140306314 | PHOTODIODE ARRAY - A light receiving region includes a plurality of light detecting sections | 10-16-2014 |
20140327101 | IMAGE PICKUP DEVICE AND MANUFACTURING METHOD FOR PRODUCING SAME - An image pickup device includes a light-receiving device unit, a processing portion, a first connection body, and a second connection body. The first connection body electrically connects a first electrode of the light-receiving device unit to a corresponding second electrode of the processing portion. The first connection body includes an indium-containing solder portion disposed between the first electrode and the second electrode, and a barrier layer for suppressing alloying of the solder portion with the first electrode and the second electrode. The second connection body includes an alloy portion formed by alloying with a solder containing a material having a melting point equal to or higher than a melting point of the first connection body and a hardness higher than that of the first connection body. | 11-06-2014 |
20140361395 | Biometric Sensor Chip Having Distributed Sensor and Control Circuitry - A sensor includes a sensor array formed on a first side of a substrate and at least one circuit operative to communicate with the sensor array formed on a second side of the substrate. At least one via extends through the substrate to electrically connect the sensor array to the at least one circuit. Placing the at least one circuit on the second side of the substrate allows the sensor array to occupy substantially all of the first side of the substrate. | 12-11-2014 |
20140367823 | IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region. | 12-18-2014 |
20140374869 | DETECTOR MODULE FOR AN IMAGING SYSTEM - A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector. | 12-25-2014 |
20150014806 | Image Sensor and Manufacturing Method Thereof - The invention discloses an image sensor ( | 01-15-2015 |
20150021731 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - The solid-state imaging device according to the present invention includes a semiconductor substrate including an imaging region and a peripheral circuit region, a wiring layer formed on the semiconductor substrate, a plurality of pixel electrodes arranged in a matrix on the wiring layer above the imaging region, a photoelectric conversion film formed on the wiring layer and the plurality of pixel electrodes above the imaging region, and an upper electrode formed on the photoelectric conversion film. The photoelectric conversion film has a laminated structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated, the well layers made of a first semiconductor having a fundamental absorption edge in a wavelength region longer than a near-infrared light wavelength, and the barrier layers made of an insulator or a second semiconductor having a band gap wider than that of the first semiconductor. | 01-22-2015 |
20150091123 | LIGHT SENSOR - Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels. | 04-02-2015 |
20150311358 | PHOTODIODE ARRAY - A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region. | 10-29-2015 |
20150340400 | STACKED SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A stacked solid-state imaging device includes a first substrate and a second substrate that are stacked on each other, a photoelectric conversion unit that converts incident light into an electrical signal, an electrode portion that is provided on the first substrate and has an exposed surface exposed to the outside in order to deliver an electrical signal to and from the outside, a connection portion that electrically connects a first contact portion provided on the first substrate and a second contact portion provided on the second substrate, and a wiring portion that is provided on the first substrate and electrically connects the electrode portion and the first contact portion in which the connection portion is arranged so as not to overlap the exposed surface when seen from a stacked direction in which the first substrate and the second substrate are stacked on each other. | 11-26-2015 |
20150357366 | NON-PLANAR INORGANIC OPTOELECTRONIC DEVICES - A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes. | 12-10-2015 |
20150380455 | SEMICONDUCTOR PHOTODETECTION DEVICE - A plurality of semiconductor photodetecting elements have a planar shape having a pair of first sides opposed to each other in a first direction and a pair of second sides being shorter than the pair of first sides and opposed to each other in a second direction perpendicular to the first direction, and are disposed on a base so as to be adjacent to each other in juxtaposition. A plurality of bump electrodes each are disposed on sides where the pair of first sides lie in each semiconductor photodetecting element, to electrically and mechanically connect the base to each semiconductor photodetecting element. A plurality of dummy bumps are disposed so that at least one dummy bump is disposed on each of sides where the pair of second sides lie in each semiconductor photodetecting element, to mechanically connect the base to each semiconductor photodetecting element. | 12-31-2015 |
20160043128 | SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SEMICONDUCTOR UNIT, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS - A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is provided on one surface side of the first semiconductor substrate; a second device substrate including a second semiconductor substrate and a second wiring layer, in which the second device substrate is bonded to the first device substrate, and the second wiring layer is provided on one surface side of the second semiconductor substrate; a through-electrode penetrating the first device substrate and a part or all of the second device substrate, and electrically connecting the first wiring layer and the second wiring layer to each other; and an insulating layer provided in opposition to the through-electrode, and penetrating one of the first semiconductor substrate and the second semiconductor substrate. | 02-11-2016 |
20160086997 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer. | 03-24-2016 |
20160093657 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device includes a photoelectric conversion unit disposed above a substrate and a reading circuit. The photoelectric conversion unit includes a first electrode disposed above the substrate, a second electrode disposed above the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The second electrode includes an opening, and is disposed in contact with the photoelectric conversion film at a boundary between adjacent photoelectric conversion units. An insulating film is disposed in contact with the second electrode. | 03-31-2016 |
20160118432 | IMAGE SENSOR WITH VERTICAL ELECTRODES - An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening. | 04-28-2016 |
20160148966 | Space-Efficient PCB-Mountable Image Sensor, And Method For Fabricating Same - A space-efficient PCB-mountable image sensor includes a semiconductor substrate having a top surface and a side surface, a bond pad on the top surface, and a conductive layer formed on the side surface and electrically connected to the bond pad. A camera module includes a PCB and a space-efficient PCB-mountable image sensor. A conductive layer of the PCB-mountable image sensor is electrically connected between the bond pad and a contact pad of the PCB. A method for fabricating a space-efficient PCB-mountable image sensor includes forming a trench next to an image sensor on a first side of an image sensor wafer, the image sensor including a bond pad. The method also includes forming a conductive layer spanning the bond pad and at least part of a side wall of the trench, and singulating the image sensor wafer along the trench. | 05-26-2016 |
20160190201 | IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region. | 06-30-2016 |
20160204140 | SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE | 07-14-2016 |