Class / Patent application number | Description | Number of patent applications / Date published |
257437000 | Antireflection coating | 63 |
20080230863 | Methods and apparatus for manufacturing semiconductor devices - In accordance with the teachings of the present disclosure, methods and apparatus are provided for a semiconductor device having thin anti-reflective layer(s) operable to absorb radiation that may otherwise reflect off surfaces disposed inwardly from the anti-reflective layer(s). In a method embodiment, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. The method further includes forming an anti-reflective layer outwardly from the first outer sidewall surface. The anti-reflective layer has: a second outer sidewall surface that is not parallel with the substrate, a second refractive index that is greater than the first minimum refractive index, and a second thickness that is less than the first thickness. | 09-25-2008 |
20080277753 | THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME - The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. | 11-13-2008 |
20080308890 | BACK-ILLUMINATED TYPE IMAGING DEVICE AND FABRICATION METHOD THEREOF - Light is illuminated from a back-surface side of a silicon substrate | 12-18-2008 |
20090008736 | METHOD FOR PHOTO-DETECTING AND APPARATUS FOR THE SAME - A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal. | 01-08-2009 |
20090008737 | Image Sensor Having Anti-Reflection Film and Method of Manufacturing the Same - Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. | 01-08-2009 |
20090057801 | Back-Illuminated, Thin Photodiode Arrays with Trench Isolation - Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed. | 03-05-2009 |
20090085140 | FINGER TYPE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a finger type photodiode and a method of manufacturing the same, which can reduce noise by forming a shallow doping layer. The finger type photodiode includes a bottom substrate supporting layers to be formed thereon, an epitaxial layer formed on the bottom substrate, a finger doping layer formed in a finger shape on a top surface of the epitaxial layer, and a shallow doping layer formed with a shallow depth on an externally exposed top surface of the epitaxial layer and a top surface of the finger doping layer. Since the dangling bond generated on the epitaxial layer and the finger doping layer is reduced, noise can be reduced, thereby improving the light efficiency and reliability of the photodiode. | 04-02-2009 |
20090243018 | HYBRID INORGANIC-ORGANIC POLYMER COMPOSITIONS FOR ANTI-REFLECTIVE COATINGS - An organic-inorganic composition, which has a backbone containing —Si—O— units with chromophore groups attached directly to at least a part of the silicon atoms. The film forming composition and resulting coating properties can be tailored to suit the specific exposure wavelength and device fabrication and design requirements. By using two different chromophores the refractive index and the absorption co-efficient can be efficiently tuned and a desired Si-content of the anti-reflective coating composition can be obtained—a high Si-content will give good mechanical and thermal properties and also the required wet etch and dry etch properties. | 10-01-2009 |
20090302409 | IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS - An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light. | 12-10-2009 |
20090302410 | Photodiode array and production method thereof, and radiation detector - A photodiode array | 12-10-2009 |
20090315134 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 12-24-2009 |
20100001358 | PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR - A photodetector | 01-07-2010 |
20100038740 | COLOR IMAGE SENSOR WITH IMPROVED OPTICAL CROSSTALK - The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention proposes positioning, between the adjacent filters of different colors (FR, FB, FV), a wall ( | 02-18-2010 |
20100164042 | BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING - Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed. | 07-01-2010 |
20100200944 | DARK CURRENT REDUCTION IN BACK-ILLUMINATED IMAGING SENSORS - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device. | 08-12-2010 |
20100264505 | Photodiodes with PN Junction on Both Front and Back Sides - The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector. | 10-21-2010 |
20100270638 | PHOTODIODES WITH SURFACE PLASMON COUPLERS - A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure. | 10-28-2010 |
20100301441 | PHOTODIODE WITH HIGH ESD THRESHOLD - A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer. | 12-02-2010 |
20100301442 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device that performs photoelectric conversion, comprising: a semiconductor substrate that includes (i) a first conductivity-type semiconductor region, (ii) a second conductivity-type semiconductor region that is positioned on the first conductivity-type semiconductor region and has a light receiving surface, and (iii) a first conductivity-type contact region that penetrates, from an upper surface of the second conductivity-type semiconductor region, the second conductivity-type semiconductor region so as to be in contact with the first conductivity-type semiconductor region; an electrode pair for drawing current obtained by performing photoelectric conversion of light incident on the light receiving surface, the electrode pair being composed of (i) a first electrode that is positioned on the first conductivity-type contact region and (ii) a second electrode that is positioned on the second conductivity-type semiconductor region so as to be separated from the first electrode; an insulating film that is positioned on the second conductivity-type semiconductor region and in an area between the first electrode and the second electrode; and a third electrode that is positioned on the insulating film. | 12-02-2010 |
20100327386 | PHOTODIODE ARRAY, IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD - A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit. | 12-30-2010 |
20110018085 | SILICON PHOTOELECTRIC MULTIPLIER HAVING CELL STRUCTURE - Disclosed is a silicon photoelectric multiplier having a cell structure, which includes a first type silicon substrate; a plurality of cells including a first type epitaxial layer formed on the substrate, a high concentration first type conductive layer formed on the epitaxial layer, and a high concentration second type conductive layer doped with a second type opposite the first type and formed on the high concentration first type conductive layer; a trench formed to optically separate the plurality of cells; and a guard ring formed on an outer wall of the trench so as to reach a bottom surface of the first type epitaxial layer, thus further increasing the degree of optical separation to thereby increase light detection efficiency. | 01-27-2011 |
20110042771 | Near-Infrared Absorbing Film Compositions - A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film. | 02-24-2011 |
20110169121 | THIN WAFER DETECTORS WITH IMPROVED RADIATION DAMAGE AND CROSSTALK CHARACTERISTICS - The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises several embodiments that provide for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. In one embodiment, a photodiode array comprises a substrate having at least a front side and a back side, a plurality of diode elements integrally formed in the substrate forming the array, wherein each diode element has a p+ fishbone pattern on the front side, and wherein the p+ fishbone pattern substantially reduces capacitance and crosstalk between adjacent photodiodes, a plurality of front surface cathode and anode contacts, and wire interconnects between diode elements made through a plurality of back surface contacts. | 07-14-2011 |
20110175187 | SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges. | 07-21-2011 |
20110198717 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate. | 08-18-2011 |
20110221024 | ALUMINUM INDIUM ANTIMONIDE FOCAL PLANE ARRAY - In one embodiment, a detector includes an Al | 09-15-2011 |
20110221025 | ALUMINUM INDIUM ANTIMONIDE FOCAL PLANE ARRAY - In one embodiment, a detector includes an Al | 09-15-2011 |
20110248370 | ELECTROMAGNETIC RADIATION CONVERTER WITH A BATTERY - The invention relates to semiconductor electronics and can be used for producing high-efficient broad-band electromagnetic radiation converters for directly converting incident radiation into electromotive force in both, the optically visible and optically invisible ranges. The inventive electromagnetic radiation converter comprises a semiconductor substrate with N=1 discrete local domains of a first conductivity type formed thereon, and since said substrate is of a second conductivity type, the above-mentioned domains of a first conductivity type form together with the substrate N=1 p-n junctions combined into a current node. Furthermore, isotype junctions generating repulsive isotype barriers to the minority charge carriers are formed on the face side of the substrate beyond the domains of a first conductivity type. The inventive design of the converter enables it to operate in a broader electromagnetic radiation frequency range, thereby promoting the increase in the performance factor and power thereof in comparison with converters known in the prior art, and to achieve the high accuracy and stability on the output characteristics thereof. Batteries formed of the converters of said type are also disclosed. | 10-13-2011 |
20110272774 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which has a low-profile laminate structure including an interlayer insulating film and includes an easily formed alignment mark, and a method for manufacturing the semiconductor device. The semiconductor device includes a photoelectric transducer formed in a semiconductor substrate, a stopper film in a mark area, a first interlayer insulating film formed over the stopper film and photoelectric transducer, a first metal interconnect, and a second interlayer insulating film. A through hole which penetrates the first and second interlayer insulating films and reaches the stopper film is made and a first concave is made in the upper surface of a conductive layer in the through hole. A second concave to serve as an alignment mark is made in a second metal interconnect above the first concave. | 11-10-2011 |
20110291217 | PHOTOELECTRIC CONVERTER AND IMAGING SYSTEM INCLUDING THE SAME - A photoelectric converter includes a substrate, photoelectric converting elements formed in the substrate and each having a light-receiving surface, an antireflection film arranged above at least a part of the light-receiving surface of each photoelectric converting element, an element isolation region including an insulator, a plurality of transistors including read transistors configured to read electric charges of the photoelectric converting elements, an interlayer insulating film arranged above the photoelectric conversion elements and the read transistors, and contacts electrically connected to active regions of the transistors. The antireflection film is arranged above the element isolation region and the active region connected to each contact. The antireflection film serves as an etch stop film when the interlayer insulating film is etched. | 12-01-2011 |
20110316110 | ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS - A back-illuminated silicon photodetector has a layer of Al | 12-29-2011 |
20120038014 | BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM - A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region. | 02-16-2012 |
20120038015 | ANTIREFLECTIVE LAYER FOR BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING SAME - The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm. | 02-16-2012 |
20120061788 | PHOTODIODES WITH PN-JUNCTION ON BOTH FRONT AND BACK SIDES - The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector. | 03-15-2012 |
20120104531 | AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME - Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process. | 05-03-2012 |
20120112302 | Novel Integration Process to Improve Focus Leveling Within a Lot Process Variation - A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer. | 05-10-2012 |
20120168891 | ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS - High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches. | 07-05-2012 |
20120241895 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: an opto-electrical conversion section provided inside a semiconductor substrate to receive incident light coming from one surface of the semiconductor substrate; a wiring layer provided on the other surface of the semiconductor substrate; and a light absorption layer provided between the other surface of the semiconductor substrate and the wiring layer to absorb transmitted light passing through the opto-electrical conversion section as part of the incident light. | 09-27-2012 |
20120299143 | Thin, very high transmittance, back-illuminated, silicon-on-saphire semiconductor substrates bonded to fused silica - A very high transmittance, back-illuminated, silicon-on-thin sapphire-on-fused silica wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays with improved indirect optical crosstalk suppression. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiN | 11-29-2012 |
20130049154 | DEVICE AND METHOD FOR INDIVIDUAL FINGER ISOLATION IN AN OPTOELECTRONIC DEVICE - An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers includes a pad area for forming an electrical contact. The optoelectronic device includes a plurality of pad areas that is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact. | 02-28-2013 |
20130099346 | Back-Side Readout Semiconductor Photomultiplier - This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region. | 04-25-2013 |
20130105930 | METHOD FOR MAKING SEMICONDUCTOR LIGHT DETECTION DEVICES | 05-02-2013 |
20130113065 | PAD DESIGN FOR CIRCUIT UNDER PAD IN SEMICONDUCTOR DEVICES - Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via. | 05-09-2013 |
20130134542 | DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR - Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material. | 05-30-2013 |
20130161777 | ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS - Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package. | 06-27-2013 |
20140061840 | MANUFACTURING METHOD FOR EDGE ILLUMINATED TYPE PHOTODIODE AND SEMICONDUCTOR WAFER - A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions | 03-06-2014 |
20140159187 | ANTIREFLECTION SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of antireflection substrate structure includes: providing a silicon wafer having a first rough surface; forming an antireflection optical film on the silicon wafer, wherein the antireflection optical film conformally overlays the first rough surface; performing a surface treatment on the antireflection optical film so that the antireflection optical film has a hydrophilic surface, and the hydrophilic surface is relatively far away from the silicon wafer; dropping a colloidal solution on the hydrophilic surface of the antireflection optical film, wherein the colloidal solution includes a solution and multiple nano-balls and the nano-balls are adhered onto the hydrophilic surface; and performing an etching process on the hydrophilic surface of the antireflection optical film by taking the nano-balls as an etching mask so as to form a second rough surface, wherein the roughness of the second rough surface is different from the roughness of the first rough surface. | 06-12-2014 |
20140167197 | Metal Shield Structure and Methods for BSI Image Sensors - A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate. | 06-19-2014 |
20140167198 | ATOMIC LAYER DEPOSITION OF HIGH PERFORMANCE ANTI REFLECTION COATINGS ON DELTA-DOPED CCDS - A back-illuminated silicon photodetector has a layer of Al | 06-19-2014 |
20140183681 | Surface Treatment for BSI Image Sensors - A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein a first dielectric layer formed over the first side of the semiconductor substrate and an interconnect layer formed over the first dielectric layer. The image sensor structure further comprises a backside illumination film formed over a second side of the semiconductor substrate and a first silicon halogen compound layer formed between the second side of the semiconductor substrate and the backside illumination film. | 07-03-2014 |
20140210034 | NEAR-INFRARED ABSORBING FILM COMPOSITIONS - A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film. | 07-31-2014 |
20140217540 | FULLY DEPLETED DIODE PASSIVATION ACTIVE PASSIVATION ARCHITECTURE - A fully depleted “diode passivation active passivation architecture” (DPAPA) produces a photodiode structure which includes a substrate, a highly-doped buffer layer of a first carrier doping type above the substrate, a low-doped or undoped semiconductor active layer of the first carrier doping type above the buffer layer, a low-doped or undoped passivation layer above the active layer, the passivation layer having a wider band gap than the active layer; and a junction layer of a carrier doping type opposite the first carrier doping type above the passivation layer such that a pn junction is formed between the junction layer and the passivation and active layers, the junction creating a depletion region which expands completely through the passivation and active layers in response to a reverse bias voltage. The fully depleted structure substantially eliminates Auger recombination, reduces dark currents and enables cryogenic level performance at high temperatures. | 08-07-2014 |
20140239432 | ENERGY CONVERSION AND STORAGE DEVICE AND MOBILE ELECTRONIC DEVICE CONTAINING SAME - An energy conversion and storage device includes an energy storage component ( | 08-28-2014 |
20140299956 | LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS - An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer. | 10-09-2014 |
20140312447 | LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS - A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. | 10-23-2014 |
20150325723 | POLYCRYSTALLINE PHOTODETECTORS AND METHODS OF USE AND MANUFACTURE - Method and apparatus for semiconductor devices are presented. The method may be performed by applying a layer of polycrystalline material to a surface of a substrate. The polycrystalline layer may be a lead salt semiconductor material. The method is further performed by applying junctions and two or more spaced apart electrical contacts to the polycrystalline material to create a photovoltaic device in which changes in light interacting with the polycrystalline material causes changes in voltage at the junctions thereby enabling photodetection. | 11-12-2015 |
20150349009 | DARK CURRENT REDUCTION FOR BACK SIDE ILLUMINATED IMAGE SENSOR - A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material. | 12-03-2015 |
20150357359 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a solid state imaging device includes a semiconductor layer, an intermediate film, an anti-reflection film and a conductive film. The semiconductor layer performs photoelectric conversion. The intermediate film is provided on the semiconductor layer. The intermediate film has a negative charge. The anti-reflection film is provided on the intermediate film. The conductive film is provided on the anti-reflection film. | 12-10-2015 |
20150380447 | DEEP TRENCH ISOLATION SHRINKAGE METHOD FOR ENHANCED DEVICE PERFORMANCE - Some embodiments of the present disclosure relate to a deep trench isolation (DTI) structure configured to enhance efficiency and performance of a photovoltaic device. The photovoltaic device comprises a functional layer disposed over an upper surface of a semiconductor substrate, and a pair of pixels formed within the semiconductor substrate, which are separated by the DTI structure. The DTI structure is arranged within a deep trench. Sidewalls of the deep trench are partially covered with a protective sleeve formed along the functional layer prior to etching the deep trench. The protective sleeve prevents etching of the functional layer while etching the deep trench, which prevents contaminants from penetrating the pair of pixels. The protective sleeve also narrows the width of the DTI structure, which increases pixel area and subsequently the efficiency and performance of the photovoltaic device. | 12-31-2015 |
20160005913 | SEMICONDUCTOR PHOTOMULTIPLIER AND A PROCESS OF MANUFACTURING A PHOTOMULTIPLIER MICROCELL - The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process. | 01-07-2016 |
20160016791 | OPTICAL ELECTRONIC DEVICE AND METHOD OF FABRICATION - An optical electronic device and method that forms cavities through an interposer wafer after bonding the interposer wafer to a window wafer. The cavities are etched into the bonded interposer/window wafer pair using the anti-reflective coating of the window wafer as an etch stop. After formation of the cavities, the bonded interposer/window wafer pair is bonded peripherally of die areas to the MEMS device wafer, with die area micromechanical elements sealed within respectively corresponding ones of the cavities. | 01-21-2016 |
20160035778 | Thin Active Layer Fishbone Photodiode With A Shallow N+ Layer and Method of Manufacturing the Same - The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application. | 02-04-2016 |
20160126267 | IMAGING SYSTEMS WITH BACKSIDE ISOLATION TRENCHES - An image sensor such as a backside illumination image sensor may be provided with analog circuitry, digital circuitry, and an image pixel array on a semiconductor substrate. Trench isolation structures may separate the analog circuitry from the digital circuitry on the substrate. The trench isolation structures may be formed from dielectric-filled trenches in the substrate that isolate the portion of the substrate having the analog circuitry from the portion of the substrate having the digital circuitry. The trench isolation structures may prevent digital circuit operations such as switching operations from negatively affecting the performance of the analog circuitry. Additional trench isolation structures may be interposed between portions of the substrate on which bond pads are formed and other portions of the substrate to prevent capacitive coupling between the bond pad structures and the substrate, thereby enhancing the high frequency operations of the image sensor. | 05-05-2016 |