Entries |
Document | Title | Date |
20080230862 | Method, Apparatus, Material, and System of Using a High Gain Avalanche Photodetector Transistor - Here, we demonstrate new material/structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The desired properties of an optimum photodetector is achieved. Different variations are discussed, both in terms of structure and material. | 09-25-2008 |
20080265357 | Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device - A semiconductor optical receiver device is provided, which a mesa comprising a plurality of semiconductor crystal layers formed on a semiconductor substrate including a pn junction having a first conductive semiconductor crystal layer and a second conductive semiconductor crystal layer and including a first contact layer on the semiconductor substrate, a plurality of electrodes to apply electric field to the pn junction are coupled on the semiconductor substrate, a second contact layer is formed on a buried layer in which the mesa is buried, and the electric field is applied to the pn junction through the first and second contact layers. | 10-30-2008 |
20080290440 | Photodiode for Image Sensor and Method of Manufacturing the Same - A photodiode for an image sensor capable of reducing reflection of light incident onto the photodiode and effectively absorbing transmitted light and a method of manufacturing the same are provided. In the photodiode for the image sensor, a silicon concavo-convex surface with a nano-thickness is formed by forming silicon oxide (SiO, x=0.5-1.5) layer on a silicon substrate and treating the silicon oxide layer with heat. A photodiode region is formed under the silicon layer having convexes and concaves. In this case, light absorptance increases because light reflected on the silicon concavo-convex surface is reincident onto another convex or concave. Therefore, an effective depth of the photodiode is larger than that of a planar photodiode, and accordingly, quantum efficiency of the photodiode increases. | 11-27-2008 |
20090008735 | PHOTO DETECTOR, IMAGE SENSOR, PHOTO-DETECTION METHOD, AND IMAGING METHOD - A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure is included in the photoelectric conversion layer of the photo detector. | 01-08-2009 |
20090121305 | Front-Illuminated Avalanche Photodiode - The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD. | 05-14-2009 |
20090218649 | Highly efficient silicon detector with wide spectral range - High efficiency silicon radiation detector from ultraviolet to near infrared region, including a structure with a wide spectral range that work at the ultraviolet region, said structure, comprises a silicon photodetector with an excess of silicon 3-10%, and annealing temperature at 1100° C., increasing the wave length range from 200 to 1100 nm. | 09-03-2009 |
20100025796 | Microchannel plate photocathode - An energy-enhanced, low-temperature growth technique is used for direct deposition of periodic table column III nitrides-based negative electron affinity (NEA) photocathodes on standard glass microchannel plates (MCPs.) As working examples, low-temperature RF plasma-assisted molecular beam epitaxy growth (MBE) of p-type GaN layers on sapphire, quartz, and glass and alumina MCPs and their photoemission characterization is disclosed. | 02-04-2010 |
20100025797 | Device Comprising an Ohmic Via Contact, and Method of Fabricating Thereof - Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity. | 02-04-2010 |
20100052088 | HIGH SENSITIVITY PHOTODETECTORS, IMAGING ARRAYS, AND HIGH EFFICIENCY PHOTOVOLTAIC DEVICES PRODUCED USING ION IMPLANTATION AND FEMTOSECOND LASER IRRADIATION - The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention. | 03-04-2010 |
20100155872 | IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR - An image sensor includes a trench formed in a semiconductor substrate, a first reflection part formed in the trench and having an inclined, curved surface, a second reflection part formed on the first reflection part such that a remaining space of the trench is filled with the second reflection part, and a vertical type photodiode formed on a region of the substrate between trenches. A method for forming the image sensor includes forming a trench in a semiconductor substrate, forming a first reflection part having an inclined, curved surface in the trench, forming a second reflection part on the first reflection part such that a remaining space of the trench is filled with the second reflection part, and forming a vertical type photodiode on a region of the substrate between trenches. | 06-24-2010 |
20100207228 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate. | 08-19-2010 |
20100301440 | Mesa photodiode and method for manufacturing the same - A mesa photodiode which includes a mesa, the sidewall of the mesa is a surface that is inclined in the direction in which the bottom of the mesa becomes wider. At least the sidewall of the mesa is covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type. The semiconductor layer is grown on at least the sidewall of the mesa. The inclined angle of the inclined surface of the mesa at the upper end portion is smaller than the inclined angle of the inclined surface of the mesa at the lower end portion. | 12-02-2010 |
20110140224 | DIODE BOLOMETER AND METHOD FOR PRODUCING A DIODE BOLOMETER - A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength. | 06-16-2011 |
20110147874 | PHOTODIODE ISOLATION IN A PHOTONIC INTEGRATED CIRCUIT - Consistent with the present disclosure, a current blocking layer is provided between output waveguides carrying light to be sensed by the photodiodes in a balanced photodetector, and the photodiodes themselves. Preferably, the photodiodes are provided above the waveguides and sense light through evanescently coupling with the waveguides. In addition, the current blocking layer may include alternating p and n-type conductivity layers, such that, between adjacent ones of such layers, a reverse biased pn-junction is formed. The pn-junctions, therefore, limit the amount of current flowing from one photodiode of the balanced detector to the other, thereby improving performance. | 06-23-2011 |
20110156194 | PHOTODETECTOR WITH A PLASMONIC STRUCTURE - This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector. | 06-30-2011 |
20110233708 | SEMICONDUCTOR LIGHT RECEIVING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light receiving device including: a semiconductor substrate; a semiconductor layer laminated on the semiconductor substrate and including an upper surface portion; a reflecting film formed to cover the upper surface portion of the semiconductor layer and including a principal reflecting region and an upper surface; and an upper electrode formed to cover at least one portion of the upper surface of the reflecting film, and including a junction portion extending through the reflecting file to be provided in contact with the upper surface portion of the semiconductor layer, the junction portion of the upper electrode surrounding a portion of a circumference of the principal reflecting region of the reflecting film, the principal reflecting region being connected to a region of the reflecting film located outside the junction portion, in which the semiconductor light receiving device detects light entering from another side of the semiconductor substrate. | 09-29-2011 |
20120032292 | PHOTODETECTOR HAVING A VERY THIN SEMICONDUCTING REGION - The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio. | 02-09-2012 |
20120211853 | SOLID-STATE IMAGING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A solid-state imaging apparatus includes: an imaging section having a light-receiving portion for receiving light from an object to image the object; and a substrate on which the imaging section is disposed, wherein a predetermined member provided on the substrate in the neighborhood of the light receiving portion is partially or entirely coated in black. | 08-23-2012 |
20120292729 | Optoelectronic Devices Having Deep Level Defects and Associated Methods - Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm. | 11-22-2012 |
20120299142 | PHOTOELECTRIC CONVERSION DEVICE - Disclosed is a photoelectric conversion device provided with transparent electrodes having high electric conductivity, low optical absorptance, and capable of obtaining a high light scattering effect. A first transparent electrode layer ( | 11-29-2012 |
20130001729 | High Fill-Factor Laser-Treated Semiconductor Device on Bulk Material with Single Side Contact Scheme - The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor. | 01-03-2013 |
20130015547 | PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME, PHOTO SENSOR AND IMAGING DEVICEAANM Hamano; MitsumasaAACI KanagawaAACO JPAAGP Hamano; Mitsumasa Kanagawa JP - Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device. | 01-17-2013 |
20130099345 | ELECTRICAL CONTACTS TO NANOSTRUCTURED AREAS - A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed. | 04-25-2013 |
20130187250 | Semiconductor Devices Having an Enhanced Absorption Region and Associated Methods - Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm. | 07-25-2013 |
20130200480 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a first structure part, a second structure part, and a third structure part. The first structure part includes a first insulating body and a first photoelectric conversion part. The first photoelectric conversion part is periodically disposed in the first insulating body and selectively absorbs light in the first wavelength band. The second structure part includes a second insulating body and a second photoelectric conversion part. The second photoelectric conversion part is periodically disposed in the second insulating body and selectively absorbs light in the second wavelength band. The third structure part includes a third photoelectric conversion part. The third photoelectric conversion part absorbs light in a third wavelength band. When viewed in the light incidence direction, the first photoelectric conversion part, the second photoelectric conversion part, and the third photoelectric conversion part are disposed in this order. | 08-08-2013 |
20130299933 | PLASMON INDUCED HOT CARRIER DEVICE, METHOD FOR USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME - In general, the invention relates to a unit that includes a semiconductor and a plasmonic material disposed on the semiconductor, where a potential barrier is formed between the plasmonic material and the semiconductor. The unit further includes an insulator disposed on the semiconductor and adjacent to the plasmonic material and a transparent conductor disposed on the plasmonic material, where, upon illumination, the plasmonic material is excited resulting the excitation of an electron with sufficient energy to overcome the potential barrier. | 11-14-2013 |
20140042580 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface. | 02-13-2014 |
20140048899 | LOW DAMAGE LASER-TEXTURED DEVICES AND ASSOCIATED METHODS - Methods for laser processing semiconductor materials for use in optoelectronic and other devices, including materials, devices, and systems associated therewith are provided. In one aspect, a method of minimizing laser-induced material damage while laser-texturing a semiconductor material can include delivering short pulse duration laser radiation to a target region of a semiconductor material to form a textured region having a reorganized surface layer, wherein the laser radiation has a wavelength from about 200 nm to about 600 nm and a pulse duration of from about 10 femtoseconds to about 400 picoseconds, and wherein defect density of the semiconductor material from beneath the reorganized surface layer up to a depth of about 1 micron is less than or equal to about 10 | 02-20-2014 |
20140191354 | LASER SYSTEM WITH POLARIZED OBLIQUE INCIDENCE ANGLE AND ASSOCIATED METHODS - Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized. | 07-10-2014 |
20140231948 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME - A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region. | 08-21-2014 |
20140264704 | LOW CROSS-TALK FOR SMALL PIXEL BARRIER DETECTORS - Methods and structures of barrier detectors are described. The structure may include an absorber that is at least partially reticulated. The at least partially reticulated absorber may also include an integrated electricity conductivity structure. The structure may include at least two contact regions isolated from one another. The structure may further include a barrier layer disposed between the absorber and at least two contact regions. | 09-18-2014 |
20140284750 | Photovoltaic Device Including A Back Contact And Method Of Manufacturing - A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer. | 09-25-2014 |
20150069565 | Germanium Photodetector Having Absorption Enhanced under Slow-Light Mode - A novel germanium (Ge) photodetector is disclosed, containing a stripe layer including Ge, a substrate supporting the stripe layer, and P and N regions, which are located inside the substrate and near opposite sides of the stripe. The stripe layer containing Ge for light absorption is operated in a slow-light mode by adding combinations of a gradual taper indent structure and a periodic indent structure to reduce light scatterings and to control light group velocity inside the stripe. Due to the slower light traveling velocity inside the stripe, the absorption coefficient of the stripe containing Ge is upgraded to be 1 to 2 orders of magnitude larger than that of a traditional bulk Ge at L band, and so the absorption coefficient reaches more than 1 dB/μm at the wavelength of 1600 nm. | 03-12-2015 |
20150137300 | Infrared Sensor Device and Method for Producing an Infrared Sensor Device - An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio. | 05-21-2015 |
20150311374 | OPTOELECTRONIC DEVICE WITH LATERAL PIN OR PIN JUNCTION - An optoelectronic device, including a semiconductor body having a surface to receive photons and a plurality of doped regions of opposite doping polarities, the doped regions extending substantially from the surface of the semiconductor body and into the semiconductor body, and being arranged in one or more pairs of opposite doping polarities such that each pair of doped regions forms a corresponding space charge region having a corresponding electric field therein, the space charge region extending substantially from the surface of the semiconductor body and into the semiconductor body such that photons entering the semiconductor body through the surface and travelling along paths within the space charge region generate electron-hole pairs in the space charge region that are separated in opposing directions substantially orthogonal to the photon paths by the electric field and collected by the corresponding pair of doped regions, thereby providing an electrical current to be conducted from the device. | 10-29-2015 |
20160079452 | PHOTODETECTOR WITH PLASMONIC STRUCTURE AND METHOD FOR FABRICATING THE SAME - A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon. | 03-17-2016 |
20170236864 | CMOS IMAGE SENSOR STRUCTURE | 08-17-2017 |