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With housing or encapsulation

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257414000 - RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)

257428000 - Electromagnetic or particle radiation

257431000 - Light

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
257434000 With window means 75
Entries
DocumentTitleDate
20100052087Image Sensor - An image sensor die includes a conformal dielectric coating over at least a die sidewall adjacent an interconnect edge and, in some embodiments, a conformal dielectric coating over the image array area of the front side of the die. The die can be connected to circuitry in a support by an electrically conductive material that is applicable in a flowable form, such as a curable electrically conductive polymer, which is applied onto or adjacent the dielectric coating on the die sidewall, and which is cured to complete connection between interconnect pads on the die and exposed sites on the support circuitry. The coating over the image array area, at least, is substantially transparent to visible light, and provides mechanical and chemical protection for underlying structures in and on the image sensor. Also, a package contains such an image sensor die mounted on and electrically connected to a support; and assemblies include such an image sensor die and additional die mounted on and electrically connected to opposite sides of a support. Also, methods are disclosed for making the image sensor die, packages, and assemblies.03-04-2010
20110006387SOLID-STATE IMAGING DEVICE - A photodiode is formed for each pixel of a semiconductor substrate. An insulating film is formed on the semiconductor substrate, the insulating film having a depressed portion over the photodiode. A buried film having a higher refractive index than the insulating film is formed in the depressed portion. The cross sectional area of the depressed portion along a plane parallel to the light-receiving surface of the semiconductor substrate gradually increases at positions further away from the light-receiving surface of the semiconductor substrate.01-13-2011
20120112301REAR-FACE ILLUMINATED SOLID STATE IMAGE SENSORS - A microelectronic unit includes a semiconductor element having a front surface to which a packaging layer is attached, and a rear surface remote from the front surface. The element includes a light detector including a plurality of light detector element arranged in an array disposed adjacent to the front surface and arranged to receive light through the rear surface. The semiconductor element also includes an electrically conductive contact at the front surface connected to the light detector. The conductive contact includes a thin region and a thicker region which is thicker than the thin region. A conductive interconnect extends through the packaging layer to the thin region of the conductive contact, and a portion of the conductive interconnect is exposed at a surface of the microelectronic unit.05-10-2012
20110012220Wafer-level image sensor module, method of manufacturing the same and camera module - A wafer-level image sensor module including: a wafer having an image sensor and a plurality of upper pads provided thereon, the wafer having an inclined surface on either side thereof; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of lead portions having one ends connected to the respective upper pads, the lead portions being formed to extend to the bottom surface of the wafer along the inclined surface of the wafer; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the other ends of the respective lead portions01-20-2011
20110012219OPTIMIZATION OF DESICCANT USAGE IN A MEMS PACKAGE - A MEMS device may be package with a desiccant to provide a moisture-free environment. In order to avoid undesirable effects on the MEMS device, the desiccant may be selected or treated so as to be compatible with a particular MEMS device. This treatment may include baking of the desiccant to as to cause outgassing of moisture or other undesirable material. The structure of the MEMS device may also be altered to improve compatibility with particular desiccants.01-20-2011
20090026566Semiconductor device having backside redistribution layers and method for fabricating the same - Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.01-29-2009
20130161776ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - An electronic device includes a first wiring substrate including a component mounting area, a second wiring substrate stacked on the first wiring substrate, in which an opening portion is provided in a part corresponding to the component mounting area, and connected to the first wiring substrate via solder bumps which are arranged on a periphery of the component mounting area, a frame-like resin dam layer formed between the solder bumps on the periphery of the component mounting area, and surrounding the component mounting area, and an electronic component mounted on the component mounting area of the first wiring substrate, wherein a sealing resin is filled between the first wiring substrate and the second wiring substrate such that the component mounting area is formed as a resin non-forming area by the resin dam layer.06-27-2013
20100244171SEMICONDUCTOR MODULE AND CAMERA MODULE MOUNTING SAID SEMICONDUCTOR MODULE - A semiconductor module includes a lower wiring substrate having a semiconductor device mounted and an upper wiring substrate having an opening in a position corresponding to the semiconductor device and having a packaging-component mountable region around the opening. The lower wiring substrate and the upper wiring substrate are electrically connected to each other via a plurality of solder balls provided around the semiconductor device. The solder balls are covered with light blocking under-fills.09-30-2010
20110298077METHODS OF FABRICATION OF PACKAGE ASSEMBLIES FOR OPTICALLY INTERACTIVE ELECTRONIC DEVICES AND PACKAGE ASSEMBLIES THEREFOR - Packaging assemblies for optically interactive devices and methods of forming the packaging assemblies in an efficient manner that eliminates or reduces the occurrence of process contaminants. In a first embodiment, a transparent cover is attached to a wafer of semiconductor material containing a plurality of optically interactive devices. The wafer is singulated, and the optically interactive devices are mounted on an interposer and electrically connected with wire bonds. In a second embodiment, the optically interactive devices are electrically connected to the interposer with back side conductive elements. In a third embodiment, the optically interactive devices are mounted to the interposer prior to attaching a transparent cover. A layer of encapsulant material is formed over the interposer, and the interposer and encapsulant material are cut to provide individual packaging assemblies. In a fourth embodiment, the optically interactive devices are mounted in a preformed leadless chip carrier.12-08-2011
20110291215WAFER LEVEL IMAGE SENSOR PACKAGING STRUCTURE AND MANUFACTURING METHOD FOR THE SAME - The present invention discloses a wafer level image sensor packaging structure and a manufacturing method for the same. The manufacturing method includes the following steps: providing a silicon wafer with image sensor chips, providing a plurality of transparent lids, allotting one said transparent lid on top of the corresponding image sensor chip, and carrying out a packaging process. The manufacturing method of the invention has the advantage of having a simpler process, lower cost, and higher production yield rate. The encapsulation compound arranges on the first surface of the image sensor chip and covers the circumference of the transparent lid to avoid the side light leakage as traditional chip scale package (CSP). Thus, the sensing performance of the wafer level image sensor packaging structure can be enhanced.12-01-2011
20120098080METHOD AND PACKAGE FOR AN ELECTRO-OPTICAL SEMICONDUCTOR DEVICE - An electro-optical semiconductor device having a semiconductor die including an active region for detecting light which is covered by a cover. The cover has a transparent pane over the active region, and is supported by a standoff. The standoff sits on the die on a perimeter region between the active region and a plurality of bond pads disposed around the periphery of the die.04-26-2012
20090189238PACKAGED MICROELECTRONIC IMAGERS AND METHODS OF PACKAGING MICROELECTRONIC IMAGERS - Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microelectronic substrate, an integrated circuit, and an image sensor electrically coupled to the integrated circuit. A bond-pad is carried by the substrate and electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends partially through the substrate and is in contact with the bond-pad. The interconnect can include a passage extending partially through the substrate to the bond-pad, a dielectric liner deposited into the passage and in contact with the substrate, a conductive layer deposited onto at least a portion of the dielectric liner, a wetting agent deposited onto at least a portion of the conductive layer, and a conductive fill material deposited into the passage and electrically coupled to the bond-pad.07-30-2009
20090152662MICRO-SENSOR AND MANUFACTURING METHOD THEREOF - The micro-sensor for a micro image pick-up device includes a flexible circuit board and a circuit substrate. The flexible circuit board has an opening exposing an end of a plurality of metal wires. An image sensing device that electrically connected to a plurality of printed wires disposed on the circuit substrate. The circuit substrate is disposed at the opening of the flexible circuit board. The plurality of printed wires on the circuit substrate corresponds to and contacts the end of the plurality of metal wires exposed out of the flexible circuit board. With the design of the flexible circuit board, the steps of forming a plurality of wiring ducts on the circuit substrate and electrically connecting the printed wires of the circuit substrate by a plurality of connecting lines for transferring signals can be omitted.06-18-2009
20120032291Stand-Alone Device - A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.02-09-2012
20090309178IMAGE SENSOR PACKAGE AND FABRICATION METHOD THEREOF - The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.12-17-2009
20090212382OPTICAL LEADLESS LEADFRAME PACKAGE - Apparatuses and methods directed to a semiconductor chip package having an optical component are disclosed. Packages include a die having a light sensing region and a stress buffer on a first surface, a first opaque encapsulant having an opening therethrough disposed atop the first surface, and a second transparent or translucent encapsulant formed within the first encapsulant opening and directly atop and contacting the light sensing region. A leadless leadframe or other conductive component can be coupled to a second surface of the die. The die may also have light sensitive regions that are shielded by the first encapsulant and/or stress buffer. The stress buffer can be a layer formed at the wafer stage or a dam formed at the panel stage. A customized mold is used while dispensing the first encapsulant such that the opening therethrough is properly formed.08-27-2009
20080283952Semiconductor Package, Method of Fabricating the Same and Semiconductor Package Module For Image Sensor - Provided are a semiconductor package, a method of fabricating the same, and a semiconductor package module for an image sensor The semiconductor package includes a mounting portion on which a semiconductor chip is mounted; a semiconductor chip including a plurality of bonding pads disposed along an edge thereof, wherein the semiconductor chip adhered onto the mounting portion; a plurality of leads spaced apart from a sidewall of the semiconductor chip and having a greater height than the semiconductor chip; an encapsulant for fixing the mounting portion and the leads and encapsulating a bottom surface and a sidewall of the semiconductor package and exposing top and bottom surfaces of the leads; bonding wires for connecting the bonding pads of the semiconductor chip with the exposed top surfaces of the leads; and a transparent plate adhered onto the leads a predetermined space apart from the semiconductor chip.11-20-2008
20080211049METHOD AND DEVICE FOR INTEGRATING AN ILLUMINATION SOURCE AND DETECTOR INTO THE SAME IC PACKAGE THAT ALLOWS ANGULAR ILLUMINATION WITH A COMMON PLANAR LEADFRAME - An optical navigation device includes an integrated package. The integrated package includes a planar leadframe, a light source die mounted on the leadframe, and a sensor die mounted on the leadframe to be coplanar with the light source die. The integrated package may be mounted at an angle or parallel to a navigation surface. The sensor die may be mounted at a distance from the light source die to detect specular or scattered reflection. The optical navigation device may be devoid of any optical element used to manipulate light generated by the light source die.09-04-2008
20090289318ELECTRONICS DEVICE PACKAGE AND FABRICATION METHOD THEREOF - Embodiments provide an electronic device package and a method for fabricating thereof. A semiconductor chip has a substrate. A supporting brick is separated from the substrate by a certain distance. A bonding pad having a surface is disposed across the substrate and the supporting brick.11-26-2009
20090289317PACKAGING STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention provides a packaging structure and a method for fabricating the same, the packaging structure includes a chip, a compatible pad provided on the chip, an intermediate metal layer electrically connecting with the compatible pad, a solder bump, and a redistribution metal layer electrically connecting with the solder bump, wherein the redistribution metal layer connects with the intermediate metal layer directly to form an electrical connection. Also, some connections between the redistribution metal layer and the intermediate metal layer are in a manner of concave shape, while other connections between the redistribution metal layer and the intermediate metal layer are in a manner of “-” shape, so that the number of the connections increases while the stability of connection is ensured.11-26-2009
20090039455Image sensor package with trench insulator and fabrication method thereof - The invention provides an image sensor package and a method for fabricating thereof. The package comprises a substrate having an image sensor device electrically connected to a metal layer thereon and a covering plate disposed over the substrate. A plurality of trench insulators is formed in the substrate, whereby the each trench insulator surrounds an isolation region each. A via hole is formed in the substrate within the isolation region and electrically connects to the metal layer to a solder ball thereby transmitting a signal from the image sensor device to an exterior circuit.02-12-2009
20090166785Semiconductor Device with Optical Sensor and Method of Forming Interconnect Structure on Front and Backside of the Device - A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump.07-02-2009
20080303109Optoelectronic device chip having a composite spacer structure and method making same - An optoelectronic device chip, and a method for making the chip, are disclosed. The chip comprises a device substrate, an optically transparent upper substrate, and a composite spacer layer which includes an adhesive material and a plurality of particles dispersed in said adhesive material. The distance between the device substrate and the upper substrate is controlled by the thickness of the composite spacer layer so that the variation is within the depth of focus of optical system.12-11-2008
20090014826Image sensor package and fabrication method thereof - An image sensor package and a method for fabricating thereof are provided. A substrate having an insulator filled cavity is provided with an image sensor device electrical connected to a metal layer, thereon. A covering plate is then disposed on the substrate. The substrate is subsequently thinned to expose the insulator. Removing a portion of the insulator, a hole is formed and a conductive layer is filled therein to form a via hole. Next, a solder ball is located over a backside of the substrate which is electrically connected to the metal layer through the via hole. The image sensor package is thinned, thus, the dimensions thereof are reduced.01-15-2009
20080265355SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.10-30-2008
20110204464Micro-Optical Device Packaging System - According to one embodiment, a micro-optical device includes an electro-optical circuit and an annular frame disposed on a surface of a substrate. The electro-optical circuit has an active region that is encapsulated by a window and an interconnect region adjacent at least one edge of the electro-optical circuit. The annular frame extends around an outer periphery of the window and is separated from the window by a gap, the annular frame and the electro-optical circuit form a cavity for placement of a plurality of bonding wires the interconnect that electro-optical circuit to the substrate.08-25-2011
20090140363Optical semiconductor device having photosensitive diodes and process for fabricating such a device - An optical semiconductor device includes, in a zone (06-04-2009
20100276774INTEGRATED CIRCUIT PACKAGE AND METHOD FOR FABRICATION THEREOF - The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.11-04-2010
20120104530SUBSTRATE FOR DISPLAY PANEL, AND DISPLAY DEVICE - A display panel substrate includes a plurality of pixels, a pixel in the display panel substrate including a PIN diode for conducting therethrough a different electric current in accordance with an amount of light received by the light receiving element, a first inorganic insulating film formed on the PIN diode, a line formed on or above the first inorganic insulating film and electrically connected to the PIN diode, an organic insulating film formed on or above the line, a transparent pixel electrode formed on the organic insulating film, and a transparent cover electrode provided at such a position that the transparent electrode is located between the organic insulating film and the first inorganic insulating film and formed to cover at least a part of an I-layer of the PIN diode.05-03-2012
20090102003PACKAGE COMPRISING AN ELECTRICAL CIRCUIT - A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.04-23-2009
20090102002PACKAGED SEMICONDUCTOR ASSEMBLIES AND ASSOCIATED SYSTEMS AND METHODS - Semiconductor packages, packaged semiconductor devices, methods of manufacturing semiconductor packages, methods of packaging semiconductor devices, and associated systems are disclosed. A semiconductor package in accordance with a particular embodiment includes a die having a first side carrying a first bond site electrically connected to a sensor and/or a transmitter configured to receive and/or transmit radiation signals. The semiconductor package also includes encapsulant material at least partially encapsulating a portion of the die. The semiconductor package includes a conductive path from the first bond site to a second bond site, positioned on a back surface of the encapsulant, which can include through-encapsulant interconnects. A cover can be positioned adjacent to the die and be generally transparent to a target wavelength.04-23-2009
20090230493SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at either an upper surface of the transparent member or an upper surface of the supporting member; and a second mark disposed at an outer side of the light-receiving area, at an upper surface of the solid-state imaging element.09-17-2009
20090001495Image sensor package and fabrication method thereof - The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.01-01-2009
20120193741METHODS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSORS WITH FRONT SIDE METAL REDISTRIBUTION LAYERS - Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.08-02-2012
20120193742PHOTOELECTRIC CONVERSION MODULE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion module includes: a substrate having a light transmitting property and having a mounting surface; a photoelectric conversion element mounted on the mounting surface of the substrate; a cover member fixed to the substrate via a solder layer constituted by solder and forming, cooperatively with the substrate, an airtight chamber housing the photoelectric conversion element; and a solder adsorbing film provided near an area fixed to the substrate by the solder layer, in a surface, of the cover member, facing the mounting surface, the solder having an adhesive property to the solder adsorbing film.08-02-2012
20090315133IMAGE SENSOR MODULE AND CAMERA MODULE HAVING SAME - An exemplary image sensor module includes a heat pipe and an image sensor. The heat pipe includes a main body and a working fluid. The main body includes a top flat cover, an opposite bottom flat cover and a chamber cooperatively defined between the top cover and the bottom cover. The working fluid is filled in the chamber. The image sensor is in thermal contact with an evaporation end of the heat pipe.12-24-2009
20100019338STACK TYPE SEMICONDUCTOR CHIP PACKAGE HAVING DIFFERENT TYPE OF CHIPS AND FABRICATION METHOD THEREOF - A stack type semiconductor chip package includes a first wafer mold, a protection substrate, and a second wafer mold that are stacked in a wafer level process. The first wafer mold includes a first chip having first pads and a first mold layer encapsulating the first chip. The protection substrate is placed on the first wafer mold, is mechanically bonded with the first wafer mold using a first adhesive layer, and includes wiring layers facing the first pads. The second wafer mold is placed under the first wafer mold, is mechanically bonded with the first wafer mold using a second adhesive layer, and includes a second chip having second pads, and a second mold layer encapsulating the second chip. First vias electrically connect the wiring layers of the protection substrate with the second pads. Second vias electrically connect the wiring layers of the protection substrate with external connection terminals.01-28-2010
20100258891FINGERPRINT SENSOR CHIP PACKAGE METHOD AND THE PACKAGE STRUCTURE THEREOF - A fingerprint sensor chip package method and the package structure thereof are disclosed. The invention includes: providing a substrate; arranging a sensor chip on the substrate, with an active surface of the sensor chip facing upward; forming a patterned conductive colloid on the sensor chip, wherein the patterned conductive colloid extends from the periphery of the active surface of the sensor chip along the side wall of the sensor and electrically connects with the circuit layer of the substrate; forming a non-conductive film to cover the sensor chip, the patterned conductive colloid and a portion of the substrate; and forming a conductive film on the non-conductive film. The patterned conductive colloid replaces the conventional bond wires to improve the product yield and to omit the molding process. The conductive film is electrically connected with the grounding point/area on the substrate to dissipate the static charges for protecting the chip.10-14-2010
20100213563SEMICONDUCTOR OPTOELECTRONIC DEVICE AND QUAD FLAT NON-LEADED OPTOELECTRONIC DEVICE - A semiconductor optoelectronic device including a substrate, a control chip, a light-sensing chip and a molding compound is provided. The control chip is disposed on the substrate and electrically connected to the substrate. The light-sensing chip is disposed on the substrate and electrically connected to the substrate and the control chip. The molding compound encapsulates the control chip and a material of the molding compound is an insulating material doped with a non-electro-conductive magnetic conductive material.08-26-2010
20100213562QUAD FLAT NON-LEADED CHIP PACKAGE STRUCTURE - A quad flat non-leaded chip package structure includes a leadframe, a control chip, a light-sensing chip, a first bonding wire, a plurality of second bonding wires, and a molding compound. The leadframe includes a plurality of leads. Besides, the leadframe has an upper surface and a lower surface opposite to the upper surface. The control chip and the light-sensing chip are disposed on the upper surface of the leadframe. The light-sensing chip is electrically connected to the control chip through the first bonding wire. The control chip is electrically connected to the leads through the second bonding wires. The molding compound encapsulates a portion of the leadframe, the control chip, the light-sensing chip, the first bonding wire, and the second bonding wires. In addition, the molding compound fills among the leads.08-26-2010
20080283951Semiconductor device and method for manufacturing the same - A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.11-20-2008
20100140730SEMICONDUCTOR DEVICES AND SYSTEMS - A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.06-10-2010
20080230860Integrated cirucit package and method for fabrication thereof - The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device, a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.09-25-2008
20110057281WAFER LEVEL PACKAGED INTEGRATED CIRCUIT - A wafer level packaged integrated circuit includes an array of contacts, a silicon layer and a glass layer. The silicon and glass layers are bonded together to form a bonding material layer therebetween. The bonding material layer includes gaps between the silicon layer and the glass layer at areas where no bonding material is present. An array of contacts is adjacent the semiconductor layer on a side thereof opposite the bonding layer. The wafer level packaged integrated circuit is provided with additional bonding material layer portions within the gaps and aligned with at least some of the contacts. When the wafer level packaged integrated circuit is configured as an image sensor or display having a pixel array, the additional bonding material layer portions are not used in an area of the pixel array.03-10-2011
20100207227Electronic Device and Method of Manufacturing Same - This application relates to a method of manufacturing a semiconductor device comprising providing a semiconductor wafer with the semiconductor wafer defining a first main face and a second main face opposite to the first main face; forming trenches in the first main face of the semiconductor wafer; forming a dielectric layer over the first main face and in the trenches; thinning the semiconductor wafer by removing semiconductor material from the second main face of the semiconductor wafer after the forming of the dielectric layer; and singulating at least one semiconductor chip from the semiconductor wafer along lines defined by the trenches.08-19-2010
20100133635image sensor and image sensing system including the same - The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.06-03-2010
20110024860Device For The Detection Of Electromagnetic Waves And Method For Producing Such A Device - Device for the detection of electromagnetic waves with 02-03-2011
20110210413CHIP PACKAGE AND FABRICATION METHOD THEREOF - An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region; and an auxiliary pattern having a hollow pattern formed in the spacing layer, a material pattern located between the spacing layer and the device region, or combinations thereof.09-01-2011
20100065936INTEGRATED CIRCUIT PACKAGE SYSTEM WITH IMAGE SENSOR SYSTEM - An integrated circuit package system is provided including providing a wafer including image sensor systems having interconnects connected thereto and encapsulating the image sensor systems and interconnects in a transparent encapsulant. The system includes removing a portion of the transparent encapsulant to expose portions of the interconnects and singulating the wafer to form image sensor devices including at least one of the image sensor systems and a number of the interconnects.03-18-2010
20100252902SEMICONDUCTOR DEVICE AND IMAGING DEVICE USING THE SEMICONDUCTOR DEVICE - A semiconductor device, includes: a semiconductor substrate including a first surface and a second surface which are opposite to one another; a light receiving portion provided at the first surface of the semiconductor substrate; and an optical transparent protective member so as to cover and to be adjacent to the first surface or the second surface of the semiconductor substrate; wherein a plurality of depressed portions are formed at the optical transparent protective member so as to be opposite to the light receiving portion.10-07-2010
20110037136INTEGRATED CIRCUIT PACKAGE SYSTEM WITH IMAGE SENSOR SYSTEM - An integrated circuit package system includes: an integrated circuit die including an image sensor system having interconnects connected thereto; and a transparent encapsulant on the integrated circuit die with portions of the interconnects exposed and with only the transparent encapsulant over the image sensor system to comprise an image sensor device.02-17-2011
20090014825Flexible photo-detectors - Apparatus including flexible line extending along a length. Flexible line includes first charge carrier-transporting body, photosensitive body over first charge carrier-transporting body, and second charge carrier-transporting body over photosensitive body. Each of first and second charge carrier-transporting bodies and photosensitive body extend along at least part of length of flexible line. Photosensitive body is capable of near-infrared or visible light-induced generation of charge carrier pairs. Second charge carrier-transporting body is at least semi-transparent to near-infrared light or visible light.01-15-2009
20080203510OPTICAL MODULE - An optical module of the present invention includes: a semiconductor device 08-28-2008
20100320555CONTROLLING ELECTROMECHANICAL BEHAVIOR OF STRUCTURES WITHIN A MICROELECTROMECHANICAL SYSTEMS DEVICE - In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.12-23-2010
20110068427STACKABLE WAFER LEVEL PACKAGE AND FABRICATING METHOD THEREOF - A stackable wafer level package and a fabricating method thereof are disclosed. In the stackable wafer level package, bond pads (or redistribution layers) are arranged on a bottom semiconductor die, and metal pillars are formed on some of the bond pads positioned around the edges of the bottom semiconductor die. A top semiconductor die is electrically connected to the other bond pads, on which the metal pillars are not formed, positioned around the center of the bottom semiconductor die through conductive bumps. The metal pillars and the top semiconductor die are encapsulated by an encapsulant. A plurality of interconnection patterns electrically connected to the metal pillars are formed on the surface of the encapsulant. Solder balls are attached to the interconnection patterns. Due to this stack structure, the wafer level package is reduced in thickness and footprint. Therefore, the wafer level package is highly suitable for mobile applications.03-24-2011
20100155871SILICONE RESIN COMPOSITION - A silicone resin composition containing (i) a silicone resin and (ii) fine metal oxide particles without having a reactive functional group or with a protected reactive functional group on the surface thereof (fine metal oxide particles B), wherein the silicone resin is obtained by carrying out a polymerization reaction between a silicone derivative having an alkoxysilyl group at an end of a molecule and a molecular weight of from 200 to 3000, and fine metal oxide particles having a reactive functional group on the surface thereof (fine metal oxide particles A), and wherein the fine metal oxide particles B are dispersed in the silicone resin (Embodiment 1); a silicone resin composition obtained by carrying out a polymerization reaction between a silicone derivative having a trifunctional alkoxysilyl group at an end of a molecule, and fine metal oxide particles having a reactive functional group on the surface thereof, wherein the silicone derivative contains two or more kinds of silicone derivatives each having a trifunctional alkoxysilyl group at an end of a molecule, and wherein the silicone derivative is added in two or more divided stages in the presence of the fine metal oxide particles in the polymerization reaction (Embodiment 2); and a silicone resin composition obtained by carrying out a polymerization reaction between a silicone derivative having an alkoxysilyl group at an end of a molecule or in a side chain thereof, and fine metal oxide particles having a reactive functional group on the surface thereof, wherein the alkoxysilyl group contains a silyl group having an alkoxy group and an aromatic group as functional groups directly bonded to a silicon atom (Embodiment 3). The silicone resin composition of the present invention can be suitably used as, for example, materials for encapsulating photosemiconductor elements for use in backlights for liquid crystal displays, traffic lights, outdoor big displays, advertisement sign boards, and the like.06-24-2010
20100025793Assembly for image sensing chip and assembling method thereof - An assembly for an image sensing chip to reduce the entire thickness and an assembling method thereof are disclosed. Meanwhile, the electro-optical assembly includes an image sensing chip; and a multi-layer printed circuit board having a recess to accommodate the image sensing chip, thereby decreasing the entire electro-optical assembly in thickness. The image sensing chip further includes a holder mounted on the multi-layer printed circuit board for protecting the image sensing chip and a lens mounted on the holder for being pervious to light.02-04-2010
20110156191PACKAGE STRUCTURE FOR A CHIP AND METHOD FOR FABRICATING THE SAME - The embodiment provides a package structure for a chip and a method for fabricating the same. The package structure for the chip includes a chip having a substrate and a bonding pad structure. The chip has an upper surface and a lower surface. An upper packaging layer covers the upper surface of the chip. A spacer layer is between the upper packaging layer and the chip. A conductive path is electrically connected to the bonding pad structure. An anti-reflective layer is disposed between the spacer layer and the upper packaging layer. An overlapping region is between the anti-reflective layer and the spacer layer.06-30-2011
20110156190ELECTRONIC COMPONENT - An electronic component includes a base member comprising a main surface, a cap member on the base member, a first concave portion between the main surface and the cap member, a second concave portion on the main surface, an element on the main surface and above the second concave portion, and a getter member in the second concave portion and under the element. The second concave portion, when observed from a planar view, includes a first opening portion overlapping the element and a second opening portion not overlapping the element.06-30-2011
20120153421BARRIER FILM AND PRODUCTION METHOD THEREOF - Provided are a barrier film production method and a barrier film comprising at least one organic layer and two or more inorganic layers on a surface of a plastic film, wherein, under an atmosphere of at least 0.3 atmospheric pressure and at most 1.1 atmospheric pressure (1 atmospheric pressure is 1.01325×105 Pa), an organic layer coating liquid is applied on at least one surface of the plastic film, and dried to form the organic layer, thereafter, an inorganic layer coating liquid containing an inorganic compound is applied and dried on the organic layer to laminate at least 2 to 6 inorganic layers, and thereafter, at least two layers of the laminated inorganic layers are subjected to a modification process.06-21-2012
20110089515SEMICONDUCTOR LIGHT RECEIVING DEVICE - A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier.04-21-2011
201203132073D Integration Microelectronic Assembly For Integrated Circuit Devices And Method Of Making Same - A microelectronic assembly for packaging/encapsulating IC devices, which includes a crystalline substrate handler having opposing first and second surfaces and a cavity formed into the first surface, a first IC device disposed in the cavity and a second IC device mounted to the second surface, and a plurality of interconnects formed through the crystalline substrate handler. Each of the interconnects includes a hole formed through the crystalline substrate handler from the first surface to the second surface, a compliant dielectric material disposed along the hole's sidewall, and a conductive material disposed along the compliant dielectric material and extending between the first and second surfaces. The compliant dielectric material insulates the conductive material from the sidewall. The second IC device, which can be an image sensor, is electrically coupled to the conductive materials of the plurality of interconnects. The first IC can be a processor for processing the signals from the image sensor.12-13-2012
20090057799Sensor semiconductor device and method for fabricating the same - A sensor semiconductor device and a method for fabricating the same are provided. At least one sensor chip is mounted and electrically connected to a lead frame. A first and a second encapsulation molding processes are sequentially performed to form a transparent encapsulant for encapsulating the sensor chip and a part of the lead frame and to form a light-impervious encapsulant for encapsulating the transparent encapsulant. The transparent encapsulant has a light-pervious portion formed at a position corresponding to and above a sensor zone of the sensor chip. The light-pervious portion is exposed from the light-impervious encapsulant. Light may penetrate the light-pervious portion, without using an additional cover board, thereby reducing manufacturing steps and costs. The above arrangement avoids prior-art problems of poor reliability caused by a porous encapsulant and poor signal reception caused by interference of ambient light entering into a conventional chip only encapsulated by a transparent encapsulant.03-05-2009
20120223404DETECTION MATRIX WITH IMPROVED BIASING CONDITIONS AND FABRICATION METHOD - The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.09-06-2012
20120228732PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device including a first substrate; a second substrate located generally opposite to the first substrate; a first grid pattern located on the first substrate, wherein the first grid pattern includes a first finger electrode; a first collector electrode spaced from the first finger electrode and extending in a direction that intersects the first finger electrode; and a first connecting electrode connecting the first finger electrode and the first collector electrode; and a second grid pattern located on the second substrate, wherein the second grid pattern includes a second finger electrode; a second collector electrode spaced from the second finger electrode and extending in a direction that intersects the second finger electrode; and a second connecting electrode connecting the second finger electrode and the second collector electrode, wherein the first connecting electrode and the second connecting electrode are arranged alternately and do not overlap each other.09-13-2012
20080296716Sensor semiconductor device and manufacturing method thereof - A sensor semiconductor device and a manufacturing method thereof are disclosed. The method includes: providing a light-permeable carrier board with a plurality of metallic circuits; electrically connecting the metallic circuits to a plurality of sensor chips through conductive bumps formed on the bond pads of the sensor chips, wherein the sensor chips have been previously subjected to thinning and chip probing; filling a first dielectric layer between the sensor chips to cover the metallic circuits and peripheries of the sensor chips; forming a second dielectric layer on the sensor chips and the first dielectric layer; forming grooves between the sensor chips for exposing the metallic circuits such that a plurality of conductive traces electrically connected to the metallic circuits can be formed on the second dielectric layer; and singulating the sensor chips to form a plurality of sensor semiconductor devices. The present invention overcomes the drawbacks of breakage of trace connection due to a sharp angle formed at joints, poor electrical connection and chip damage due to an alignment error in cutting from the back of the wafer, as well as an increased cost due to multiple sputtering processes for forming traces.12-04-2008
20110001208SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.01-06-2011
20100224949EPOXY RESIN COMPOSITION FOR OPTICAL SEMICONDUCTOR LIGHT-RECEIVING ELEMENT ENCAPSULATION AND PROCESS FOR PRODUCING THE SAME, AND OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to an epoxy resin composition for optical semiconductor light-receiving element encapsulation, the epoxy resin composition including the following components (A) to (D): (A) an epoxy resin; (B) a curing agent; (C) a curing accelerator; and (D) a yellow colorant, in which the component (D) is contained in a ratio of 0.01% by weight or more based on the whole of the epoxy resin composition.09-09-2010
20120326258PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE PHOTOELECTRIC CONVERSION DEVICE - It is aimed to provide a photoelectric conversion device having high reliability by reducing cracks occurring in a photoelectric conversion layer. Included is a laminate in which a substrate, a pair of electrodes located on the substrate with a gap therebetween, and a photoelectric conversion layer located in the gap and on the pair of electrodes are laminated, wherein each of the pair of electrodes includes a linear portion extending along the gap and a first projecting portion including a curved tip surface projecting from the linear portion toward the gap, the linear portion and the first projecting portion being alternately arranged along the gap.12-27-2012
20120286387SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.11-15-2012
20130009264MOISTURE BARRIER - A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al01-10-2013
20130020669METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, RESIN SEALING APPARATUS, AND SEMICONDUCTOR DEVICE - When a resin sealed package is molded with use of a release film for the purpose of preventing generation of a flash on a surface of a seal glass, the seal glass may be broken by being compressed and bent by the release film at a portion of the seal glass below which there is a cavity. The present invention prevents this breakage of the seal glass. More specifically, the present invention prevents breakage of the seal glass by forming a recess corresponding to a compression allowance of the release film at a mold die above the portion of the seal glass below which there is the cavity, or at the seal glass itself, and thereby releasing a pressure from the release film.01-24-2013
20120241894PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion layer and contains an Ia group element. Diffusion of the Ia group element to the photoelectric conversion layer improves the photoelectric conversion efficiency. A protective layer is formed between the supply layer and the circuit layer and prevents the diffusion of the Ia group element to the circuit layer.09-27-2012
20080237767Sensor-type semiconductor device and manufacturing method thereof - A sensor-type semiconductor device and manufacturing method thereof are disclosed. The method includes providing a wafer comprising a plurality of sensor chips; forming concave grooves between the solder pads formed on the active surface of adjacent sensor chips; filling a filling material into the concave grooves and forming first conductive circuits electrically connecting the solder pads of adjacent sensor chips; mounting a light permeable body on the active surface of the wafer and thinning the non-active surface of the wafer to expose the filling material; mounting the wafer on a carrier board with second conductive circuits formed thereon corresponding in position to the filling material; forming first openings by cutting the light permeable body and the wafer to a position at which the second conductive circuits are located; forming metallic layers in the first openings by electroplating, the metallic layers electrically connecting the first and second conductive circuits of adjacent sensor chips; forming second openings by cutting the metallic layers to break the first conductive circuit connections and the second conductive circuit connections of adjacent sensor chips and meanwhile keep the first and second conductive circuits of each sensor chip still electrically connected through the metallic layers; filling a dielectric material into the second openings and removing the carrier board; and separating each of the sensor chips to form a plurality of sensor-type semiconductor devices. The invention overcomes the drawbacks of the prior art such as slanting notches formed on the non-active surface of the wafer, displacement of the notches due to the difficulty in precise alignment, as well as broken joints caused by concentrated stress generated in the slanting notches and exposed circuits.10-02-2008
20080224249SEMICONDUCTOR DEVICE AND METHOD OF MANUAFCTURING THE SAME - A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.09-18-2008
20080224248Image sensor module having build-in package cavity and the method of the same - The present invention provides an image sensor module having build-in package cavity and the Method of the same. An image sensor module structure comprising a substrate with a package receiving cavity formed within an upper surface of the substrate and conductive traces within the substrate, and a package having a die with a micro lens disposed within the package receiving cavity. A dielectric layer is formed on the package and the substrate, a re-distribution conductive layer (RDL) is formed on the dielectric layer, wherein the RDL is coupled to the die and the conductive traces and the dielectric layer has an opening to expose the micro lens. A lens holder is attached on the substrate and the lens holder has a lens attached an upper portion of the lens holder. A filter is attached between the lens and the micro lens. The structure further comprises a passive device on the upper surface of the substrate within the lens holder.09-18-2008
20130181313IMAGE PICKUP UNIT AND METHOD OF MANUFACTURING THE SAME - An image pickup device and a method of the same are described herein. By way of first example, the image pickup device includes a seal member having a first surface, the first surface of the seal member including a concave portion, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member. By way of a second example, the image pickup device includes a seal member having a first surface, the first surface being a polished surface, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member.07-18-2013
20110272773METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSING DEVICE, AND SOLID-STATE IMAGE SENSING DEVICE - A method for manufacturing a solid-state image sensing device, includes mounting a solid-state image sensor on a substrate, forming an elastic layer on a first surface of a glass lid, fixing the glass lid onto the solid-state image sensor with a bonding agent so that the glass lid covers the solid-state image sensor while a second surface opposite to the first surface of the glass lid faces the solid-state image sensor, electrically connecting a terminal provided on the solid-state image sensor, to a terminal provided on the substrate, through a wire, and encapsulating the wire and covering a side surface of the glass lid with a resin.11-10-2011
20080211048Encapsulated Optical Package - A method for providing an encapsulated optoelectronic chip is provided. The optoelectronic chip is secured on a substrate. A translucent coating substance is then applied on said optoelectronic chip and the translucent coating substance is then polished away to enable an optical coupling.09-04-2008
20110233706Method For Wafer Level Package and Semiconductor Device Fabricated Using The Same - Provided is a wafer level packaging method and a semiconductor device fabricated using the same. In the method, a substrate comprising a plurality of chips is provided. An adhesive layer is formed on the substrate corresponding to boundaries of the plurality of chips. A cover plate covering an upper portion of the substrate and having at least one opening exposing the adhesive layer or the substrate at the boundaries among the plurality of chips is attached to the adhesive layer.09-29-2011
20110304001FINGERPRINT SENSING CIRCUIT - Fingerprint sensing circuit packages and methods of making such packages may comprise a first substrate having a top side and a bottom side; the top side comprising a fingerprint image sensing side over which a user's fingerprint is swiped; the bottom side comprising a metal layer forming a fingerprint sensing circuit image sensor structure; and a sensor control circuit housed in a sensor control circuit package mounted on the metal layer. The sensor control circuit may comprise an integrated circuit die contained within the sensor control circuit package. The fingerprint sensing circuit package may also have a second substrate attached to the bottom side of the first substrate having a second substrate bottom side on which is placed connector members connecting the fingerprint sensing circuit package to a device using a fingerprint image generated from the fingerprint sensing circuitry contained in the fingerprint sensing circuitry package.12-15-2011
20130193545SEMICONDUCTOR APPARATUS AND IMAGE SENSOR PACKAGE USING THE SAME - A semiconductor apparatus and a method of fabricating the same are provided. The semiconductor apparatus includes a body part having a first surface and a second surface facing each other, a first trench formed into the first surface of the body part, a second trench formed into the second surface of the body part, an opening connecting the first trench and the second trench to each other, a first adhesion enhancer, such as a rough surface, formed on a bottom surface of the first trench, and a second adhesion enhancer, such as a rough surface, formed on the second surface of the body part.08-01-2013

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