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With optical element

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257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257414000 - RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)

257428000 - Electromagnetic or particle radiation

257431000 - Light

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DocumentTitleDate
20130043552INTEGRATED INFRARED SENSORS WITH OPTICAL ELEMENTS AND METHODS - An infrared (IR) radiation sensor device (02-21-2013
20130043550SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a solid-state imaging apparatus including a first impurity layer, a second impurity layer, a third impurity layer, and an electrode. The first impurity layer is a photoelectric conversion layer, and is formed to have a constant depth on a semiconductor substrate. The second impurity layer is formed on a surface of the first impurity layer, to have a depth which becomes shallower toward a direction from the first impurity layer to the third impurity layer. The third impurity layer is formed in a position spaced apart from the first impurity layer and the second impurity layer on the surface of the semiconductor substrate. The electrode can transport electric charges from the first impurity layer to the third impurity layer, and is formed between the second impurity layer and the third impurity layer, on the surface of the semiconductor substrate.02-21-2013
20130026591SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus including a substrate and a solid-state image pickup device. The substrate includes an opening portion. The solid-state image pickup device is mounted as a flip chip on a lower surface of the substrate on a circumference of the opening portion and receives and photo-electrically converts light that is taken in by a lens set on an upper surface of the substrate and enters from the opening portion. The circumference of the opening portion of the substrate is thinner than other portions of the substrate.01-31-2013
20120199928SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member.08-09-2012
20130026592FOCAL PLANE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering them with a further sacrificial layer and forming first conductive portions in the surface of the sacrificial layer that are in contact with the supporting legs; forming a second wafer having read-out integrated circuit (ROIC), the second wafer being covered by another sacrificial layer, into which is formed second conductive portions in contact with the ROIC; bringing the sacrificial oxide layers of the first wafer and second wafer together such that the first and second conductive portions are aligned and bonding them together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; and removing the sacrificial layers to release the pixel, with the supporting legs underneath it.01-31-2013
20130026593THIN FILM PHOTOVOLTAIC DEVICE WITH ENHANCED LIGHT TRAPPING SCHEME - A thin film photovoltaic device comprising a relief textured transparent cover plate, a layer of transparent conductive oxide having a layer thickness of less than 700 nm, a light absorbing active layer and a reflective back electrode, where the layer of transparent conductive oxide is a non-textured layer.01-31-2013
20130026590SLOPED STRUCTURE, METHOD FOR MANUFACTURING SLOPED STRUCTURE, AND SPECTRUM SENSOR - A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.01-31-2013
20130026589MINIATURIZATION ACTIVE SENSING MODULE AND METHOD OF MANUFACTURING THE SAME - A miniaturization active sensing module includes a substrate unit, an active sensing unit, and an optical unit. The substrate unit includes a substrate body, a plurality of first bottom conductive pads disposed on the bottom side of the substrate body, and a plurality of first conductive tracks embedded in the substrate body. The substrate body has at least one first groove formed therein. The active sensing unit includes at least one active sensing chip embedded in the first groove. The active sensing chip has at least one active sensing area and a plurality of electric conduction pads disposed on the top side thereof, and each first conductive track has two ends electrically contacted by one electric conduction pad and one first bottom conductive pad, respectively. The optical unit includes at least one optical element, disposed on the substrate body, for protecting the active sensing area.01-31-2013
20090212379Semiconductor apparatus, manufacturing method for the semiconductor apparatus, and electronic information device - A semiconductor apparatus according to the present invention includes one or a plurality of pairs of a standard pattern and an offset pattern formed therein with respect to the standard pattern as manufacturing information and other information at an information writing position, which is visible from the outside, of each semiconductor chip on a wafer.08-27-2009
20080296714Wafer level package of image sensor and method for manufacturing the same - Provided is a wafer level package of an image sensor capable of simply and easily packaging an image sensor in a packaging process, and a method for manufacturing the same. The wafer level package of an image sensor includes a lower substrate including an image sensor, a conductive pattern coupled to the image sensor, and a plurality of vias coupled to the conductive pattern; a micro lens array film having a plurality of micro lenses corresponding to the image sensor, the micro lenses being formed on the lower substrate; and a sealing line surrounding the image sensor while being spaced apart from the image sensor and being in contact with an upper substrate. The wafer level package may be useful to have an electrical connection structure using vias without any need to a bonding wire, an electrode pad and an electrode lead in the conventional wafer level package since a packaging process is carried out by bonding a wafer for an upper substrate with a plurality of the vias being provided in a wafer for a lower substrate12-04-2008
20090160001IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - An image sensor and a method for manufacturing the same are disclosed. The image sensor manufacturing method may include forming a hard mask pattern over a semiconductor substrate to cover a photodiode region; forming convex photodiodes by wet-etching the photodiode region in the semiconductor substrate using the hard mask pattern; removing the hard mask pattern; forming an interlayer insulating film over the photodiode; forming color filter layers aligned with the photodiodes over the interlayer insulating film; and forming microlenses over the color filter layers. The resulting image sensor can transduce a greater quantity of light as compared to the related art, owing to an increased unit surface area, resulting in enhanced optical efficiency characteristics.06-25-2009
20130043551SLOPED STRUCTURE, METHOD FOR MANUFACTURING SLOPED STRUCTURE, AND SPECTRUM SENSOR - A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.02-21-2013
20090146236PHOTOSENSITIVE RESIN COMPOSITION FOR PAD PROTECTIVE LAYER, AND METHOD FOR MAKING IMAGE SENSOR USING THE SAME - The present invention provides a photosensitive resin composition for a pad protective layer that includes (A) an alkali soluble resin, (B) a reactive unsaturated compound, (C) a photoinitiator, and (D) a solvent. The (A) alkali soluble resin includes a copolymer including about 5 to about 50 wt % of a unit having the Chemical Formula 1, about 1 to about 25 wt % of a unit having the Chemical Formula 2, and about 45 to about 90 wt % of a unit having the Chemical Formula 3, and a method of making an image sensor using the photosensitive resin composition.06-11-2009
20130134537SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, ELECTRONIC APPARATUS, AND COMPOSITION FOR SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein the pixels each have at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filters of a part of the pixels are each a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filters of another part of the pixels are each a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film are in the following relationship: (Refractive index of white filter)≧(Refractive index of microlens)>(Refractive index of planarizing film).05-30-2013
20130134540SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 05-30-2013
20130134536SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged, the solid-state imaging device includes: a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels, wherein a protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters, the protrusion having a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.05-30-2013
20130134535BACKSIDE IMAGE SENSOR PIXEL WITH SILICON MICROLENSES AND METAL REFLECTOR - A backside illumination (BSI) image sensor pixel that includes microlenses with elevated refractive indices is provided. The image sensor pixel may include a photodiode formed in a silicon substrate, a first microlens formed in a back surface of the substrate, a second microlens formed over a front surface of the substrate, a dielectric stack formed on the front surface of the substrate, and a reflective structure formed in the dielectric stack above the second microlens. The first microlens may be fabricated by forming shallow trench isolation structures in the back surface. The second microlens may be fabricated by depositing polysilicon on the front substrate of the substrate. The first microlens may serve to concentrate light towards the photodiode, whereas the second microlens may serve to collimate light that traverses through the substrate so that light exiting the second microlens will reflect off the reflective structure and back into the photodiode.05-30-2013
20080258250Solid-state image capturing device, method of manufacturing the same, and electronic information device - A solid-state image capturing device is provided, in which a multilayered wiring section having a plurality of wiring layers laminated via respective interlayer insulation films is provided on a semiconductor substrate or a semiconductor region formed on the substrate where a plurality of light receiving sections for photoelectrically converting a subject light are arranged in matrix in a pixel section; and the interlayer insulation films in a pixel section are evenly engraved, so that the pixel section of the substrate is thinner than a peripheral circuit section; and a plurality of light receiving sections and respective microlenses facing with each other are arranged on the bottom surface of the engraved portion of the interlayer insulation film.10-23-2008
20110193188IMAGE SENSOR - An image sensor comprising a black pixel region and an active pixel region is provided. The active pixel region is adjacent to the black pixel region. The black pixel region comprises a dummy black pixel region and a readout black pixel region. The readout black pixel region is surrounded by the dummy black pixel region. The dummy black pixel region comprises a photo-sensitive element, a first shielding layer, a second shielding layer and a third shielding layer. The first shielding layer, the second shielding layer and the third shielding layer are used for blocking the incident light going into the photo-sensitive element. The first shielding layer, the second shielding layer and the third shielding layer cover the photo-sensitive element, and the second shielding layer is interposed between the first shielding layer and the third shielding layer.08-11-2011
20100148292SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate 06-17-2010
20100164040Microlens Structure for Image Sensors - A microlens structure and a method of fabrication thereof are provided. The method comprises forming a layer of microlens material over a substrate, which has photo-sensitive elements formed therein. The microlens material, which comprises a photo-resist material, is exposed in accordance with a desired pattern a plurality of times. The energy used with each exposure process is less than the energy required if a single exposure is used. Furthermore, the masks used for each exposure may differ. In an embodiment, the masks are varied so as to create a notch in the upper corner of the microlens. The microlens structure may have a height less than about 0.5 um and/or a gap between microlenses less than about 0.2 um. In an embodiment, one or more dielectric layers having a combined thickness greater than about 3.5 um are interposed between the photo-sensitive elements and the microlenses.07-01-2010
20130037902IMAGE SENSING DEVICE, IMAGE SENSING SYSTEM, AND METHOD FOR MANUFACTURING IMAGE SENSING DEVICE - An image sensing device includes a light-shielding film having transit portions, a first film and a second film. The second film comprises a first layer having a different refractive index from the first film. The first layer lies within at least the transit portions, and forms interfaces with the first film. The distance between the interface and the corresponding photoelectric conversion portion is greater than the distance between the photoelectric conversion portion and the lower end of the corresponding transit portion.02-14-2013
20100117175Semiconductor module - A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and a light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light permeable cover. The light permeable cover is provided at the outer circumferential region of the front thereof and at the side thereof with a light shielding layer. It is possible to prevent the incidence of unnecessary light from the side of the light permeable cover of a CSP and to easily adjust the distance between a lens and the front of the semiconductor chip within tolerance.05-13-2010
20100072568Image Sensor and Method of Manufacturing the Same - An image sensor and a method of manufacturing the same are disclosed. The image sensor includes a plurality of photodiodes on a substrate, an dielectric layer on the plurality of the photodiodes, a metal line layer in the dielectric layer corresponding to a border region between neighboring photodiodes, the metal line layer having a curved backside, a color filter layer on the dielectric layer, and a microlens on the color filter layer.03-25-2010
20130075850FLIP-CHIP BONDED IMAGER DIE - An image sensor includes an imager die, a circuit board, and an optical layer. The circuit board is flip-chip bonded to the imager die. The optical layer is adhered to the circuit board and includes a first portion configured to refract light differently than a second portion. Both the first portion and the second portion are integrally formed with the optical layer.03-28-2013
20130032915SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a solid state imaging device includes a substrate, and a plurality of interference filters. The substrate includes a plurality of photoelectric conversion units. The plurality of interference filters is provided individually for the plurality of photoelectric conversion units. The plurality of interference filters includes a plurality of layers with different refractive indices stacked. The plurality of interference filters is configured to selectively transmit light in a prescribed wavelength range. A space is provided between adjacent ones of the interference filters.02-07-2013
20130032914SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS - A solid-state imaging apparatus including: a sensor substrate that has a plurality of pixels configured to receive incident light, the plurality of pixels being arranged on an upper surface of a semiconductor substrate; a transparent substrate that has a lower surface facing an upper surface of the sensor substrate and is configured to transmit the incident light therethrough; and a diffraction grating that is provided at any position between an upper surface of the transparent substrate and the upper surface of the sensor substrate and is configured to transmit the incident light therethrough, in which the diffraction grating is formed so as to diffract reflected diffraction light caused by that the incident light is incident on a pixel area in which the plurality of pixels are arranged on the upper surface of the semiconductor substrate and is diffracted.02-07-2013
20130075849SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING ELEMENT, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING THE SOLID STATE IMAGING ELEMENT - According to one embodiment, a solid state imaging device includes a sensor substrate curved such that an upper face having a plurality of pixels formed is recessed and an imaging lens provided on the upper face side.03-28-2013
20090121302Chip Package - A chip package includes a bump connecting said semiconductor chip and said circuitry component, wherein the semiconductor chip has a photosensitive area used to sense light. The chip package may include a ring-shaped protrusion connecting a transparent substrate and the semiconductor chip.05-14-2009
20130075851SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of pixels arranged in a matrix pattern on a substrate. Each of the pixels includes a photoelectric conversion portion configured to convert incident light to an electric signal, an optical waveguide formed over the photoelectric conversion portion, an interlayer insulating film formed around the optical waveguide, and a color filter formed over the optical waveguide. The optical waveguide is configured so that light intensity distribution of light that has transmitted through the color filter has a single peak in a center of an upper surface of the photoelectric conversion portion. The plurality of pixels include at least two kinds of pixels that include the color filters configured to transmit light of different wavelength bands from each other therethrough.03-28-2013
20100044819Method for Manufacturing CMOS Image Sensor Having Microlens Therein with High Photosensitivity - The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.02-25-2010
20100044818SEMICONDUCTOR LIGHT-RECEIVING DEVICE - Disclosed is light-receiving device (02-25-2010
20100044817PHOTOSENSITIVE RESIN COMPOSITION, COLOR FILTER AND METHOD OF PRODUCING THE SAME, AND SOLID-STATE IMAGING DEVICE - A photosensitive resin composition is provided which provides a high resolution even when a pattern is formed using a low exposure intensity (in particular, less than 200 mJ/cm02-25-2010
20100044816SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A semiconductor device includes: a semiconductor substrate having an imaging region in which a plurality of photoreceptors are arranged, and a peripheral circuit region arranged around the imaging region; a plurality of microlenses formed on the imaging region; a low-refractive-index film formed on the semiconductor substrate to cover the plurality of microlenses and part of the peripheral circuit region; and a transparent substrate formed on part of the low-refractive-index film above the imaging region. A through hole is formed in part of the low-refractive-index film above an amplifier circuit arranged in the peripheral circuit region.02-25-2010
20100044815CMOS IMAGE SENSOR PACKAGE AND CAMERA MODULE USING SAME - An image sensor package includes a cover glass, a color filter layer, an image sensor chip, and a reflecting layer. The cover glass includes a first surface and a second surface at opposite sides thereof. The color filter layer is formed on the first surface of the cover glass. The image sensor chip includes a silicon layer formed on the second surface of the cover glass, a number of pixel regions formed on a third surface of the silicon layer facing away from the cover glass, and a number of bumps formed on the third surface of the silicon layer, the bumps is capable of for electrically connecting the image sensor chip to a circuit board. The reflecting layer covers the pixel regions of the image sensor chip.02-25-2010
20100044814Camera Module and Manufacturing Method Thereof - A camera module includes an image sensor chip module and a lens module. The image sensor chip module includes a base, an image sensor chip disposed on the base and electrically connected with the base, and a frame disposed on the base and surrounding the image sensor chip therein. The lens module includes a barrel mounted on the frame of the image sensor chip module and at least two lens units disposed in the barrel respectively. One of the lens units is disposed on the frame and over the image sensor chip and has a transparent cover capable of filtering infrared rays out and a lens attached to a side of the transparent cover such that the transparent cover separates the lens away from the image sensor chip.02-25-2010
20100044813OPTICALLY CONTROLLED READ ONLY MEMORY - An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.02-25-2010
20090189237SOLID-STATE IMAGING ELEMENT - The present invention provides a solid-state imaging element including: a silicon layer having a photodiode formed therein and a positive charge accumulation region formed on the surface thereof; and an optical waveguide formed above the photodiode to guide incident light into the photodiode, wherein an insulating layer is formed in the optical waveguide, and the insulating layer has a dielectric constant of 5 or greater and negative fixed charge.07-30-2009
20090189232Methods and apparatuses providing color filter patterns arranged to reduce the effect of crosstalk in image signals - Methods and apparatuses providing color filter patterns arranged to reduce cross talk in image signals. The apparatuses include an array of pixels, each pixel having an associated color filter, arranged such that cross-talk is distributed among pixel signals of each color of the color filters.07-30-2009
20090160004SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE - Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. According to embodiments, a method may include forming a metal layer on and/or over a lower structure formed on and/or over a semiconductor substrate, forming neighboring metal lines by patterning the metal layer by a photolithography process, forming an insulating layer on and/or over a surface of the lower structure and forming a void between the metal lines, and performing heat treatment to the metal lines and the insulating layer having the void. According to embodiments, a void may be used as a buffer against expansion of the metal lines in sintering due to a difference in a thermal expansion coefficient. This may prevent a blister phenomenon that may separate an insulating film from metal lines.06-25-2009
20090160003IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method for manufacturing the same. According to embodiments, an image sensor may include a semiconductor substrate and a transistor. An interlayer insulating layer, including a metal line, may be formed on and/or over the semiconductor substrate. A lower electrode may be formed on and/or over the metal line and may be connected with the metal line. A spacer may be formed on a sidewall of the lower electrode. A photo diode may be formed on and/or over an interlayer insulating layer including the lower electrode and the spacer.06-25-2009
20090160002IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor may include an image sensor may include a photodiode formed over a semiconductor substrate. An interlayer dielectric, which may include a plurality of metal wires in a transistor region, may be formed over the semiconductor substrate, including a waveguide dielectric for guiding incident light in a photodiode region. A refractive layer may be formed at a bottom of the waveguide dielectric in the interlayer dielectric. A color filter may be formed over an upper surface of the interlayer dielectric. An overcoat may be formed over the color filter. A micro lens may be formed over the interlayer dielectric. Accordingly, high reflectivity at a bottom of the wave guide can be effectively restrained while guaranteeing reflectivity of the wave guide with respect light which is not vertically incident.06-25-2009
20090160000IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a photodiode; and then forming a reflective film frame on the photodiode, the reflective film frame having sidewalls that are inclined with respect to the uppermost surface of the photodiode; and then forming an opening over the surface of the reflective film frame and corresponding to the photodiode by forming a reflective film on the sidewalls of the reflective film frame.06-25-2009
20100109113SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.05-06-2010
20100109112IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer dielectric layer and metal wirings disposed on the semiconductor substrate; and a photorefractive unit that is formed on the periphery of an optical path incident on the photodiodes. The photorefractive unit has a lower refractive index than the interlayer dielectric layer. The slantly incident light can be incident on the photodiodes, while maintaining the slanted optical path as it is. The light sensitivity of the photodiodes can be improved, thereby improving image quality.05-06-2010
20130082342POLISHING PROCESS FOR ENHANCING IMAGE QUALITY OF BACKSIDE ILLUMINATED IMAGE SENSOR - The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, a method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface; forming a light sensing region at the first surface of the substrate; forming a doped layer at the second surface of the substrate; and after forming the doped layer, polishing the second surface of the substrate.04-04-2013
20130082344PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.04-04-2013
20130082343PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING THE SAME AND PHOTOELECTRIC CONVERSION SYSTEM - One of disclosed embodiments provides a photoelectric conversion device, comprising a member including a first surface configured to receive light, and a second surface opposite to the first surface, and a plurality of photoelectric conversion portions aligned inside the member in a depth direction from the first surface, wherein at least one of the plurality of photoelectric conversion portions other than the photoelectric conversion portion positioned closest to the first surface includes, on a boundary surface thereof with the member, unevenness having a difference in level larger than a difference in level of unevenness of the photoelectric conversion portion positioned closest to the first surface, and wherein the boundary surface having the unevenness is configured to localize or resonate light incident on the member from a side of the first surface around the boundary surface having the unevenness.04-04-2013
20120211851SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.08-23-2012
20090127644Semiconductor device comprising an image sensor, apparatus comprising such a semiconductor device and method of manufacturing such a semiconductor device - The invention relates to a semiconductor device comprising a semiconductor body in which an image sensor is formed and having a semiconductor body surface with an optically active part of the image sensor and a non-optically active part of the image sensor in which electrical connection areas of the image sensor are located, a spacer structure being present on the semiconductor body surface in the non-optically active part of the image sensor and an optical passive component being positioned on top of the spacer structure and above the image sensor and allowing radiation to impinge on the optically active part of the image sensor.05-21-2009
20100052085IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor has a large bridge margin from a repulsive force between adjacent micro lenses having different surface properties. The image sensor has a larger bridge margin with a configuration of a stepped portion between two areas, where the first and the second group of micro lenses are formed, over a planarization layer below these two areas. Thus, a zero gap is realized, where no gap between micro lenses exists, and the fill factor of micro lens is maximized. By the realization of the zero gap, interference effects decrease, noise decreases, and fill factor increases, and thus the sensitivity of an image sensor increases, especially the green sensitivity.03-04-2010
20130087875PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region.04-11-2013
20130087874SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a microlens provided in a pixel area and a monitoring structure provided in a peripheral area that is separate from the pixel area. The monitoring structure has a shape correlated with a shape of the microlens. A shape of a section of the monitoring structure in a plane perpendicular to a substrate is constant.04-11-2013
20130087876SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.04-11-2013
20130087873SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including a semiconductor substrate, a reflector, and an external electrode. The semiconductor substrate has a photosensitive region including a photodiode on the surface thereof and the back surface thereof is polished by mirror finish. The reflector is formed on the back surface of the semiconductor substrate and reflects infrared rays incident on the photosensitive region. The external electrode is electrically connected to the photosensitive region.04-11-2013
20120181647MICROMECHANICAL TUNABLE FABRY-PEROT INTERFEROMETER AND A METHOD FOR PRODUCING THE SAME - The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Micromechanical interferometers of the prior art have a disadvantage of significantly attenuating infrared radiation. In the inventive solution there is a gap in at least one mirror, serving as a layer of the mirror. The other layers of the mirrors can be made of polycrystalline silicon, which has a negligible attenuation at the infrared range. It is also preferable to provide a hole or a recess in a substrate at the optical area of the interferometer.07-19-2012
20120181646CAMERA MODULE AND METHOD OF MANUFACTURING THE SAME - There are provided a camera module and a method of manufacturing the same. The camera module according to embodiments of the present invention includes: a lens assembly including at least one lens element layer and two lenses integrally formed on each lens element layer, the two lenses having the same focal distance and different optical axes; an image sensor package receiving light incident through the lens assembly and having two image sensor chips disposed therein, the two image sensor chips corresponding to the respective two lenses; and a housing receiving the lens assembly and the image sensor package therein.07-19-2012
20120181645PHOTODETECTOR OPTIMIZED BY METAL TEXTURING PROVIDED ON THE REAR SURFACE - Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a minor above the semiconductor layer, and placed between the minor and the semiconductor layer, a periodic grating of metallic patterns, the minor and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer. The minor and the grating verify:07-19-2012
20090045476IMAGE SENSOR PACKAGE AND METHOD FOR FORMING THE SAME - An image sensor package is provided including a substrate; a sensor chip; a plurality of bond wires for connecting the sensor chip to the substrate at predetermined locations; a sensor housing on the substrate for substantially encompassing the sensor chip, the sensor housing having a through-hole cavity defining an optical glass (IR filter) seat, the sensor housing defining an upper surface and an edge surface thereof; an optical glass (IR filter) on the optical glass (IR filter) seat; an encapsulation material for substantially encapsulating the upper surface and edge surface of the sensor housing, a corresponding surface of the substrate adjacent the edge surface of the sensor housing, and the side edge of the optical glass (IR filter); wherein the sensor housing is provided with a gas-exit allowing possible high temperature gas to exit; the encapsulation material forms an upper surface which is substantially aligned with a top surface of the optical glass (IR filter); the encapsulation material forms an upper surface which is lower than a top surface of the optical glass (IR filter); the sensor housing defines a profile shape, the profile shape has at least a step-wise configuration for facilitating and accommodating flowing of the encapsulation material; the sensor housing has a bottom surface adhered to the substrate by an adhesive; and a slot is provided on the bottom surface of the sensor housing for accommodating the adhesive.02-19-2009
20100327383SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.12-30-2010
20100327381SIDEWALL PHOTODETECTOR - Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.12-30-2010
20130049153LIGHT PIPE ETCH CONTROL FOR CMOS FABRICATION - In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.02-28-2013
20110001204TRANSIMPEDANCE AMPLIFIER HAVING A SHARED INPUT - Consistent the present disclosure, a receive circuit is provided that includes a balanced detector portion and a transimpedance amplifier (TIA). The anode of one photodiode is connected to the cathode of the other by a bonding pad, which supplies the sum of the currents generated in each photodiode to an input of the TIA. Thus, the TIA may, for example, have a single input, as opposed to multiple inputs, thereby reducing the number of connections so that the photodiodes and the TIA may be integrated onto a smaller die. In addition, since there are few connections, fewer TIAs are required and differential stages are unnecessary. Power consumption is thus reduced, and, since the photodiode current is fed through one input to the TIA, fewer feedback resistors are required, thereby reducing thermal noise. In addition, since the anode of one photodiode is connected to the cathode of the other, the dark current generated in each flows in opposite directions, and is therefore effectively cancelled out. Since one input is provided, impedance matching with other inputs is unnecessary, nor is additional DC biasing circuitry needed. As described in greater detail below, an example of the present disclosure includes a bonding pad, which connects the two photodiodes and provides the input current to the TIA.01-06-2011
20130127000Interposer Package For CMOS Image Sensor And Method Of Making Same - An image sensor package and method of manufacture that includes a crystalline handler with conductive elements extending therethrough, an image sensor chip disposed in a cavity of the handler, and a transparent substrate disposed over the cavity and bonded to both the handler and image sensor chip. The transparent substrate includes conductive traces that electrically connect the sensor chip's contact pads to the handler's conductive elements, so that off-chip signaling is provided by the substrate's conductive traces and the handler's conductive elements.05-23-2013
20090115012DUAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Embodiments relate to a dual image sensor which includes a first device including a first wafer having a first inclined step, a first reflective face on an inclined plane on the first inclined step, at least one first microlens over a lower end surface adjacent the first inclined step, and a first via-hole filled with metal on an upper end face adjacent the first inclined step. A second device in the dual image sensor includes a second wafer having a second inclined step, a second reflective face on an inclined plane on the second inclined step, and at least one second microlens over a first portion of an upper end face adjacent the second inclined step. A dual image sensor is formed by connecting the metal in the first via-hole and the metal in the second via-hole together. The dual image sensor is capable of imaging light incident from one or both sides as well as light incident in front or rear of the image sensor.05-07-2009
20090302407OPTICAL FILTERING MATRIX STRUCTURE AND ASSOCIATED IMAGE SENSOR - The invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters (R, V, B), an elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers (m12-10-2009
20090302406DELAMINATION AND CRACK RESISTANT IMAGE SENSOR STRUCTURES AND METHODS - A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.12-10-2009
20120217602SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer.08-30-2012
20120217601SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.08-30-2012
20130069188DUAL-FACING CAMERA ASSEMBLY - Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).03-21-2013
20130069189BONDING PAD STRUCTURE AND FABRICATING METHOD THEREOF - A bonding pad structure is used in an integrated circuit device. The integrated circuit device includes a semiconductor substrate with a first surface and a second surface. The bonding pad structure includes a dielectric layer, a conductor structure, a pad opening and an isolation trench. The dielectric layer is formed on the second surface of the semiconductor substrate. The conductor structure is disposed within the dielectric layer. The pad opening is formed in the first surface of the semiconductor substrate. The pad opening runs through the semiconductor substrate and a part of the dielectric layer, so that the conductor structure is exposed. The isolation trench has an opening in the first surface of the semiconductor substrate. The isolation trench runs through the semiconductor substrate and a part of the dielectric layer, and the isolation trench is disposed around the pad opening.03-21-2013
20130069191NOVEL SEMICONDUCTOR AND OPTOELECTRONIC DEVICES - An integrated device, the device including a first crystalline layer covered by an oxide layer, a second crystalline layer overlying the oxide layer, wherein the first and second crystalline layers are image sensor layers, and the device includes a third crystalline layer, wherein the third crystalline layer includes single crystal transistors.03-21-2013
20130069190IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.03-21-2013
20120112300METHOD OF FORMING SILICIDE FOR CONTACT PLUGS - A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a second material layer. The second material layer surrounds the sidewall of the opening, covers part of the bottom of the opening and exposes the metal layer.05-10-2012
20130056842HIGH VOLTAGE PHOTO-SWITCH PACKAGE MODULE HAVING ENCAPSULATION WITH PROFILED METALLIZED CONCAVITIES - A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.03-07-2013
20090273049WDM Signal Detector - A detector includes a light detecting layer and a grating structure. The light detecting layer, which can be a photodiode, has an optical mode that resonates in the light detecting layer, and the grating structure is positioned to interact with the optical mode. The grating structure further couples incident light having a resonant frequency into the optical mode, and causes destructive interference to prevent light having the resonant frequency from escaping the detecting layer. The light detecting layer can be made transparent to light having other frequencies, so that a stack of such detectors, each having a different resonant frequency, can be integrated into a WDM detector that is compact and efficient.11-05-2009
20090273048IMAGE-SENSING CHIP PACKAGE MODULE ADAPTED TO DUAL-SIDE SOLDERING - An image-sensing chip package module adapted to dual-side soldering includes three substrates, an image-sensing chip and a filter lens. The three substrates are stacked together by pressing (using adhesive as adhesion medium), and the image-sensing chip is electrically connected to the top side of the top substrate and the bottom side of the bottom substrate via conductive bodies that are formed on inner surfaces of through holes passing through the three substrates. Hence, the image-sensing chip package module can use the conductive bodies formed on the bottom side of the bottom substrate (positive face electrical conduction) or the conductive bodies formed on the top side of the top substrate (negative face electrical conduction) to electrically connect with a main PCB. Furthermore, the filter lens is received and hidden in an opening of the top substrate in order to prevent the filter lens from being slid, collided and destroyed.11-05-2009
20090273046Process for Producing Solid-State Image Sensing Device, Solid-State Image Sensing Device and Camera - In the formation of a multilayer interference filter that is included in a solid-state imaging device, at the outset, a titanium dioxide layer (11-05-2009
20090079019Solid-state image capturing device, solid-state image capturing apparatus, and electronic information device - A solid-state image capturing device is provided. In the solid-state image capturing device, at least any of openings of electrode wiring layers, color filters and microlenses are provided on a light incident side above light receiving elements as a light receiving region in which the plurality of light receiving elements are disposed on a semiconductor substrate or a semiconductor region provided on a substrate, wherein a shift amount of at least any of the openings of the electrode wiring layers, the color filters and the microlenses in relation to the light receiving elements or in relation to a standard position where a light flux is desired to pass through is calculated by Snell's law based on an incident angle θ03-26-2009
20090267169SEMICONDUCTOR PHOTODETECTOR - A semiconductor photodetector includes a semiconductor substrate of a first conductivity type, a light absorption layer of the first conductivity type on the semiconductor substrate and absorbing light, a diffraction grating layer on the light absorption layer and including a diffraction grating diffracting light, a first light transmissive layer of a second conductivity type on the diffraction grating layer and transmitting light, and a second light transmissive layer of the first conductivity type on the diffraction grating layer and surrounding the first light transmissive layer, the second light transmissive layer transmitting light. The diffraction grating surrounds a region of the diffraction grating layer that is directly below the first light transmissive layer.10-29-2009
20130062719OPTICAL INPUT/OUTPUT DEVICE AND METHOD OF FABRICATING THE SAME - An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.03-14-2013
20130062718BACK-SURFACE-INCIDENCE-TYPE SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.03-14-2013
20110012218SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.01-20-2011
20110012217FREE-STANDING TWO-SIDED DEVICE FABRICATION - Devices having features deposited on two sides of a device substrate and methods for making the same. The devices are useful, for example, as the components in a macroelectronic system. In a preferred embodiment, the devices are photosensors having a plurality of electrodes patterned on a first side of the device and an electromagnetic interference filter patterned on a second side of the device. The method facilitates the fabrication of two-sided devices through the use of an immobilizing layer deposited on top of devices patterned on a first side of a device substrate; flipping the device substrate; processing the second side of the device substrate to produce patterned features on the second side of the device substrate; and releasing the devices having patterned elements on two sides of each device.01-20-2011
20090026565Optical Module - The present invention includes: photoelectric conversion element 01-29-2009
20090026562Package structure for optoelectronic device - A package structure for an optoelectronic device. The package structure comprises a device chip interposed between a lower transparent substrate and an upper transparent substrate. The device chip comprises a semiconductor substrate comprising a device region surrounded by a pad region, in which the pad region comprises a plurality of notches along the edges of the semiconductor substrate. A dielectric layer is between the semiconductor substrate and the upper transparent substrate, comprising a plurality of pads formed therein and substantially aligned with the plurality of notches, respectively. A plurality of metal lines is disposed under a bottom surface of the lower transparent substrate. A plurality of solder balls disposed under the plurality of metal lines, respectively.01-29-2009
20090008731Image Sensor and Method for Manufacturing the Same - An image sensor and method of manufacturing the same are provided. The image sensor can include a photodiode on a substrate, an interlayer insulation layer on the photodiode, and a color filter layer on the interlayer insulation layer. The color filter layer can include a nonsensitive color resin.01-08-2009
20090008730Integrated optical filter - The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.01-08-2009
20130134539Photodiode Comprising Polarizer - A photodiode includes a photosensitive area and a polarizing grating located in front of the photosensitive area. The polarizing grating is formed by a plurality of galvanically conducting filaments.05-30-2013
20130161774SOLID STATE IMAGING DEVICE - A CCD image sensor is provided with a pixel set. The pixel set is composed of first and second pixels and a microlens. The pixels are arranged side by side in a horizontal direction. The microlens has a hemispheric shape. A diameter of the microlens is larger than a length of a rectangular region, being an external shape of the first and second pixels, in a height direction. The rectangular region has a height and width ratio of approximately 1:2. The pixel sets are arranged in a width direction of the rectangular region to constitute a pixel row. In the CCD image sensor, the pixel rows are arranged in the height direction of the rectangular region, with the adjacent pixel rows shifted from each other in the horizontal direction by half pitch of the rectangular region.06-27-2013
20120235268PHOTOELECTRIC CONVERSION MODULE, METHOD FOR MANUFACTURING SAME, AND POWER GENERATION DEVICE - A photoelectric conversion module comprises: a substrate having a first surface on which a light is incident and a second surface located at the opposite side of the first surface; a photoelectric conversion element provided on the second surface of the substrate; a light-transmitting member provided on the photoelectric conversion element; and a reflecting member provided on the light-transmitting member and configured to reflect a light having transmitted through the light-transmitting member. The reflecting member comprises an inclined light reflection surface that allows a light reflected from the reflecting member to be totally reflected at the first surface of the substrate.09-20-2012
20120235267PHOTODIODE OF THE TYPE AVALANCHE PHOTODIODE - A front-illuminated avalanche photodiode (APD) includes an opening (09-20-2012
20120235266SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.09-20-2012
20120235265LIGHT RECEIVING ELEMENT, LIGHT RECEIVING DEVICE, AND LIGHT RECEIVING MODULE - A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.09-20-2012
20120235264LIGHT RECEIVING ELEMENT, LIGHT RECEIVING DEVICE, AND LIGHT RECEIVING MODULE - A light receiving element includes a waveguide that includes a waveguide core, a multi-mode interference waveguide that has a width larger than a width of the waveguide, the multi-mode interference waveguide receiving a first light from the waveguide core at a first end, and a photodetection portion that includes a first semiconductor layer and an absorption layer disposed on the first semiconductor layer, the first semiconductor layer including at least one layer and receiving a second light from the multi-mode interference waveguide at a second end, the absorption layer being disposed above the first semiconductor layer and absorbing the second light. A distance from the first end of the multi-mode interference waveguide to the second end of the photodetection portion is longer than 70% of a first length and shorter than 100% of the first length, the first length being a length where self-imaging occurs in the multi-mode interference waveguide.09-20-2012
20120235263SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.09-20-2012
20130161775PHOTODETECTOR AND CORRESPONDING DETECTION MATRIX - The invention relates to a photodetector intended for the detection of incident light radiation in the visible and close infrared region, said photodetector comprising: a light-radiation-absorption structure (06-27-2013
20110018083Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus - There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.01-27-2011
20100295142Optical Element Manufacturing Method, Optical Element, Electronic Apparatus Manufacturing Method, and Electronic Apparatus - An optical element manufacturing method wherein change in optical characteristics before and after the reflow process is suppressed, while maintaining excellent transmittance as an optical element. The method is applicable to reflow process wherein an optical apparatus, including an electronic component such as a CCD image sensor (11-25-2010
20120086093SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.04-12-2012
20110278690High Density Photodiodes - The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.11-17-2011
20110278691THREE DIMENSIONAL STRUCTURES HAVING IMPROVED ALIGNMENTS BETWEEN LAYERS OF MICROCOMPONENTS - The invention relates to a method of initiating molecular bonding, comprising bringing one face (11-17-2011
20110278689SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device includes an n-type semiconductor substrate 11-17-2011
20110278688Solid-state imaging device - A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.11-17-2011
20110278687BACKSIDE-ILLUMINATED SENSOR WITH NOISE REDUCTION - A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens.11-17-2011
20100244165METHOD AND APPARATUS PROVIDING COMBINED SPACER AND OPTICAL LENS ELEMENT - A method and apparatus used for forming a lens and spacer combination, and imager module employing the spacer and lens combination. The apparatus includes a mold having a base, spacer section, and mold feature. The method includes using the mold with a blank to create a spacer that includes an integral lens. The spacer and lens combination and imager modules can be formed on a wafer level.09-30-2010
20110140220MICROELECTRONIC DEVICE, IN PARTICULAR BACK SIDE ILLUMINATED IMAGE SENSOR, AND PRODUCTION PROCESS - A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.06-16-2011
20080290435WAFER LEVEL LENS ARRAYS FOR IMAGE SENSOR PACKAGES AND THE LIKE, IMAGE SENSOR PACKAGES, AND RELATED METHODS - Image sensor packages, lenses therefore, and methods for fabrication are disclosed. A substrate having through-hole vias may be provided, and an array of lenses may be formed in the vias. The lenses may be formed by molding or by tenting material over the vias. An array of lenses may provide a color filter array (CFA). Filters of the CFA may be formed in the vias, and lenses may be formed in or over the vias on either side of the filters. A substrate may include an array of microlenses, and each microlens of the array may correspond to a pixel of an associated image sensor. In other embodiments, each lens of the array may correspond to an imager array of an image sensor. A wafer having an array of lenses may be aligned with and attached to an imager wafer comprising a plurality of image sensor dice, then singulated to form a plurality of image sensor packages.11-27-2008
20120187514SYSTEM FOR REDUCING SENSOR AREA IN A BACK SIDE ILLUMINATED CMOS ACTIVE PIXEL SENSOR - The present invention relates to a backside illuminated (BSI) imager having a plurality of layers. A plurality of pixel sensors are positioned on a first layer of a substrate. Pixel select conductors are positioned on the substrate in front of the first layer. Pixel readout conductors including a plurality of output lines, pixel power conductors, and a ground conductor are positioned on the substrate in front of the pixel select conductors. A plurality of sample and hold capacitors coupled to the pixel output lines are positioned vertically and/or horizontally on the substrate in front of the ground conductor.07-26-2012
20110298075Lens Unit, Aligning Method, Image Pickup Device and Method for Manufacturing Image Pickup Device - Provided is a lens unit (12-08-2011
20110298074SOLID-STATE IMAGING ELEMENT AND ELECTRONIC INFORMATION DEVICE - A solid-state imaging element according to the present invention includes a plurality of light receiving sections formed in a pixel array, each light receiving section constituted of a semiconductor element for performing a photoelectric conversion on and capturing an image of image light from a subject, the solid-state imaging element further including: a light shielding wall or a reflection wall provided therein for pixel separation, in between the light receiving sections adjacent to one another in a plan view on a light entering side from the light receiving sections; and a color filter wherein at least a part of the color filter is embedded between the light shielding walls or the reflection walls, in such a manner to correspond to each of the plurality of light receiving sections, so that the distance between the color filter and a substrate can be shortened.12-08-2011
20110298073IMAGE SENSOR DEVICES AND METHODS FOR MANUFACTURING THE SAME - Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens, while a peripheral region of the selected portion of the lens remains exposed. Next, a light-shielding layer is formed on the electromagnetic interference pattern, the second sacrificial element, and the peripheral region of the selected portion of the lens. Thereafter, the second sacrificial element and the light-shielding pattern thereon are removed to expose the center region of the selected portion of the lens as a light transmitting region.12-08-2011
20100171191IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again.07-08-2010
20100006965ELECTRONIC DEVICE PACKAGE WITH ELECTROMAGNETIC COMPATIBILITY (EMC) COATING THEREON - Electronic device packages with electromagnetic compatibility (EMC) coating thereon are presented. An electronic device package includes a chip scale package having a CMOS image sensor (CIS) array chip and a set of lenses configured with an aperture. An encapsulation is molded overlying the chip scale package. A shield is atop the encapsulation. A frame fixes the set of lenses to the encapsulation. An electromagnetic compatibility (EMC) coating is formed on the encapsulation to prevent electromagnetic interference.01-14-2010
20120187515LIGHT SENSOR HAVING TRANSPARENT SUBSTRATE WITH LENS FORMED THEREIN - Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.07-26-2012
20090206434PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device comprises a semiconductor substrate and a multilayer wiring structure, wherein the multilayer wiring structure includes a first wiring layer which serves as a top wiring layer in an effective region and contains aluminum as a principal component, a first insulation film arranged in the effective region and an light-shielded region so as to cover the first wiring layer, and a second wiring layer which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and contains aluminum as a principal component, and wherein the first insulation film has, in the effective region, a first portion which is positioned above the photoelectric conversion unit, and the first portion functions as at least a part of an interlayer lens.08-20-2009
20090278219MICROELECTRONIC DEVICES HAVING AN EMI SHIELD AND ASSOCIATED SYSTEMS AND METHODS - Microelectronic devices having an EMI shield, systems including such microelectronic devices, and methods for manufacturing such microelectronic devices. One embodiment of a microelectronic device comprises an imaging system comprising a microelectronic die, an optics assembly, and an electromagnetic interference (EMI) shield. The microelectronic die includes an image sensor, processing components electrically coupled to the image sensor, a first interconnect electrically isolated from the processing components, and a second interconnect electrically coupled to the processing components. The optics assembly is aligned with the image sensor, and the electromagnetic interference (EMI) shield is between the optics assembly and the processing components. The EMI shield is electrically coupled to the first interconnect.11-12-2009
20110284981IMAGE SENSOR COMPRISING MICROLENS ARRAY, AND MANUFACTURING METHOD THEREOF - The present invention relates to an image sensor comprising a microlens array, and to a manufacturing method thereof. The method of the present invention includes gradually increasing the aluminum composition ratio of a compound semiconductor as the latter gradually gets farther from a substrate, to enable a microlens-forming layer to grow, and making the oxidation rate of the region adjacent to the substrate slower and the oxidation rate of the region farther from the substrate faster, making the interface between the oxidized region and the unoxidized region into a lens shape after the completion of oxidation. The thus-made lens is integrated into an image sensor. The present invention reduces costs for manufacturing image sensors in which a microlens is integrated, increases the signal-to-noise ratio and resolution of the image sensor, and achieves improved sensitivity.11-24-2011
20110284980SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to an aspect of the present invention includes: a first photodiode and a second photodiode; a first optical waveguide formed above the first photodiode; a second optical waveguide formed above the second photodiode; a first color filter which is formed above the first optical waveguide and transmits mainly light having a first wavelength; a second color filter which is formed above the second optical waveguide and transmits mainly light having a second wavelength; a first microlens formed above the first color filter; and a second microlens formed above the second color filter, wherein the first wavelength is longer than the second wavelength, and the first optical waveguide has a first width smaller than a second width of the second optical waveguide, the first and second widths being in a direction parallel to the semiconductor substrate.11-24-2011
20110298076PHOTODIODE AND PHOTODIODE ARRAY12-08-2011
20100090304BONDING PROCESS FOR CMOS IMAGE SENSOR - The present disclosure provides a method of making an integrated circuit (IC). The method includes forming an electric device on a front side of a substrate; forming a top metal pad on the front side of the substrate, the top metal pad being coupled to the electric device; forming a passivation layer on the front side of the substrate, the top metal pad being embedded in the passivation layer; forming an opening in the passivation layer, exposing the top metal pad; forming a deep trench in the substrate; filling a conductive material in the deep trench and the opening, resulting in a though-wafer via (TWV) feature in the deep trench and a pad-TWV feature in the opening, where the top metal pad being connected to the TWV feature through the pad-TWV feature; and applying a polishing process to remove excessive conductive material, forming a substantially planar surface.04-15-2010
20110068423PHOTODETECTOR WITH WAVELENGTH DISCRIMINATION, AND METHOD FOR FORMING THE SAME AND DESIGN STRUCTURE - The disclosure relates generally to photodetectors and methods of forming the same, and more particularly to optical photodetectors. The photodetector includes a waveguide having a radius that controls the specific wavelength or specific range of wavelengths being detected. The disclosure also relates to a design structure of the aforementioned.03-24-2011
20110291213PHOTODIODE MANUFACTURING METHOD AND PHOTODIODES - A semiconductor substrate 12-01-2011
20110291214PHOTO MASK AND METHOD FOR FABRICATING IMAGE SENSORS - A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer.12-01-2011
20110291211IMAGE SENSOR AND RELATED FABRICATING METHOD THEREOF - A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.12-01-2011
20110291212IMAGING APPARATUS HAVING PHOTOSENSOR AND MANUFACTURING METHOD OF THE SAME - A photosensor comprises a photoelectric conversion device region and a connection pad on the lower surface of a semiconductor substrate, and also comprises a wiring line connected to the connection pad via insulating film under the semiconductor substrate, and a columnar electrode as an external connection electrode connected to the wiring line. As a result, as compared with the case where the photoelectric conversion device region and the connection pad connected to the photoelectric conversion device region are formed on the upper surface of the semiconductor substrate, a piercing electrode for connecting the connection pad and the wiring line does not have to be formed in the semiconductor substrate. Thus, the number of steps can be smaller, and a fabrication process can be less restricted.12-01-2011
20110006386Organic-Inorganic Hybrid Composition and Image Sensor - Disclosed are an organic-inorganic hybrid composition including a fluorene-based monomer, an inorganic particle, an initiator, and a solvent, and an image sensor made using the same. The organic-inorganic hybrid composition can have a high refractive index and excellent transmittance to minimize light loss, and the image sensor produced using the same may transport a greater amount of light to a photodiode. Accordingly, it is possible to accomplish a high resolution image sensor having improved sensitivity.01-13-2011
20100213561Optoelectronic Device with Germanium Photodetector - An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.08-26-2010
20100213560PAD DESIGN FOR BACKSIDE ILLUMINATED IMAGE SENSOR - A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.08-26-2010
20100213559Solid-state image pickup apparatus and production method thereof - A solid-state image pickup apparatus includes: a substrate in which a charge generation portion that generates a signal charge is formed on a surface layer; a layer covering an upper surface of the substrate; a waveguide formed on the layer covering the upper surface of the substrate at a position corresponding to the charge generation portion; a hollow portion formed on the layer covering the upper surface of the substrate at a position on an outer side of the waveguide; and an optically-transparent layer formed on the layer covering the upper surface of the substrate such that at least the hollow portion becomes airtight.08-26-2010
20110018081PHOTODIODE DEVICE AND METHOD OF MANUFACTURING THE SAME - A photodiode device and methods of manufacturing the same are provided. The photodiode device comprises a light adsorption layer defining a light-facing side and a back-light side; a via passing through the adsorption layer, the via defining a side wall and a bottom surface; a conformal isolation layer covering the side wall and the bottom surface; a first patterned conductive layer disposed on the back-light side, the first patterned conductive layer having a first portion covering a first portion of the conformation isolation layer; a second patterned conductive layer disposed on the light-facing side of the adsorption layer; and an opening through the conformal isolation layer, wherein the opening is filled with the second patterned conductive layer such that the second patterned conductive layer is connected with the first portion of the first patterned conductive layer.01-27-2011
20100090303SOI SUBSTRATE AND METHOD FOR PRODUCING THE SAME, SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME, AND IMAGE PICKUP APPARATUS - A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.04-15-2010
20120098079PHOTOELECTRIC CONVERSION DEVICE AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic material, and the at least one electron blocking layer has a mixed layer containing fullerene or fullerene derivatives.04-26-2012
20120098078BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME - A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.04-26-2012
20090278220Image sensor and fabricting method thereof - An image sensor includes the steps of forming a sublayer including a photodiode, a transistor and a metal line on a substrate, forming a pattern layer on the sublayer to be overlapped with the photodiode and to having a curved surface, and forming a combined color filter and microlens on the pattern layer to have a curved surface.11-12-2009
20090146234MICROELECTRONIC IMAGING UNITS HAVING AN INFRARED-ABSORBING LAYER AND ASSOCIATED SYSTEMS AND METHODS - Infrared (IR) absorbing layers and microelectronic imaging units that employ such layers are disclosed herein. In one embodiment, a method of manufacturing a microelectronic imaging unit includes attaching an IR-absorbing lamina having a filler material to a backside die surface of an imager workpiece. An individual imaging die is singulated from the workpiece such that a section of the infrared-absorbing lamina remains attached to the individual imaging die. The individual imaging die is coupled to an interposer substrate with a portion of the IR-absorbing lamina positioned therebetween. In another embodiment, the IR-absorbing lamina is a die attach film and the filler material is carbon black.06-11-2009
20100078745SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.04-01-2010
20100078744SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes light-sensing sections serving as pixels, and waveguides each including a core layer and a cladding layer, the waveguides each being disposed at a position corresponding to one of the light-sensing sections. A cross-sectional structure of the waveguide taken in the horizontal direction of an imaging plane is different from a cross-sectional structure of the waveguide taken in the vertical direction of the imaging plane.04-01-2010
20090140362PHOTO DETECTOR - A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST06-04-2009
20100032782IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating layer microlens formed in the trench of the interlayer dielectric layer. According to the method, a substrate including a pixel area and a logic circuit area is prepared; an interlayer dielectric layer is formed on the substrate; a first microlens pattern is formed on the interlayer dielectric layer on the pixel area; and a second microlens pattern is formed by etching the interlayer dielectric layer on the pixel area using the first microlens pattern as an etch mask. During the etching, a second photoresist pattern, exposing the first microlens pattern, can be used to protect the interlayer dielectric layer on the logic circuit area.02-11-2010
20100032781Camera module and method of manufacturing the same - Provided is a camera module including an image sensor module including a substrate; an image sensor that is mounted on a top surface of the substrate; a ground pad that is disposed on a bottom surface of the substrate; and a sealing member that seals the image sensor mounted on the substrate; a lens member that is stacked on the image sensor module; and a conductive member that is formed on side surfaces of the image sensor module and the lens member so as to be electrically connected to the ground pad.02-11-2010
20080308888IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF - An image sensor includes a semiconductor substrate having a pixel region and a peripheral circuit region. An interlayer dielectric layer has metal wirings and a pad formed over the semiconductor substrate. A lower electrode is selectively formed over the metal wirings. A photo diode is formed over the interlayer dielectric layer of the pixel region. An upper electrode formed over the photo diode. Therefore, a vertical integration of the transistor and the photodiode may approach a fill factor to 100%, and provide higher sensitivity, implement more complicated circuitry without reducing sensitivity in each unit pixel, improve the reliability of the image sensor by preventing crosstalk, etc., between the pixels, and improve light sensitivity by increasing the surface area of the photo diode in the unit pixel.12-18-2008
20100025788Solid-state image capturing device, method for manufacturing the same and electronic information device - In a solid-state image capturing device having the locations of photodiodes in each pixel unit to be different according to a sequence, the light receiving sensitivity and the luminance shading characteristic are improved. A circumferential portion of a microlens 02-04-2010
20090200625BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES - An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.08-13-2009
20090189235SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS - A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.07-30-2009
20090189233CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME - An optical image sensor is fabricated by forming a pixel array and a peripheral region surrounding the pixel array on a semiconductor substrate, the peripheral region containing peripheral circuitry. An inter-level-dielectric layer is formed over the substrate and a plurality of interconnect wiring layers are formed over the inter-level-dielectric layer. Each interconnect wiring layer includes interconnecting metal features and a layer of inter-level-dielectric material covering the interconnecting metal features. The plurality of interconnect wiring layers are provided in a manner that there are N levels of wiring layers in the peripheral region and 1 to (N−1) levels of wiring layers over the pixel array. An etch-stop layer is formed over the top-most level interconnecting metal features in the peripheral region.07-30-2009
20090189236SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.07-30-2009
20090189234SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD OF THE SAME, AND IMAGING APPARATUS - In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.07-30-2009
20090166781EMI SHIELDING FOR IMAGER DEVICES - A module that provides EMI shielding for imager devices is disclosed which includes a die comprising an imager device and a plurality of contact pads, a stack positioned above the imager device, the stack comprising at least one lens, a conductive layer positioned above the stack, the conductive layer comprising at least one light opening, and a plurality of wire bonds, each of which conductively couples the conductive layer to one of the contact pads on the die. A method of providing EMI shielding for an imager module is also disclosed which includes conductively coupling a conductive layer of the module to a plurality of contact pads on an imager die and forming an encapsulant material that encapsulates at least the plurality of wire bonds, the conductive layer and the contact pads.07-02-2009
20090166782WAFER PROCESSING - Methods, devices, and systems for wafer processing are described herein. One method of wafer processing includes modifying a peripheral edge of a wafer to create a number of edge surfaces substantially perpendicular to a number of dicing paths and dicing the wafer along the number of dicing paths. In one or more embodiments, the method includes modifying the peripheral edge of the wafer with a first tool and dicing the wafer with a second tool different from the first tool.07-02-2009
20090146235Solid-state image capturing device, camera module and electronic information device - A solid-state image capturing device includes a plurality of electrode pads for inputting and outputting a signal or voltage from and to the outside, a plurality of photoelectric conversion elements, a planarization film for planarizing the difference in the level on the surface above the plurality of photoelectric conversion elements, a microlens for focusing incident light on each of the plurality of photoelectric conversion elements, and a protection film provided above the microlens and the planarization film, the planarization film and the protection film above the plurality of electrode pads being removed as an opening, where the protection film has a protection film removing area that at least includes an area removed across all or a corner portion of the opening and the image capturing area.06-11-2009
20090152661IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing the image sensor includes: forming a photoresist layer on a surface of an image sensor; exposing and developing the photoresist layer using a mask used for fabricating a plurality of micro-lenses, which has a number of first light shielding patterns aligned apart from one another and a number of second light shielding patterns, each being formed at a part, on which four adjacent edges of the first light shielding patterns are centered, so that a photoresist pattern is formed; and reflowing the photoresist pattern to fabricate a plurality of micro-lenses and a concave lens at each part, on which four adjacent edges of the micro-lenses are centered.06-18-2009
20090152660Photomask, Image Sensor, and Method of Manufacturing the Image Sensor - Provided are a photomask, an image sensor, and a method of manufacturing the image sensor. The image sensor can include photodiode structures, color filters, a planarization layer, and microlenses. The photodiode structures can be disposed on a semiconductor substrate according to unit pixel. The color filters can be disposed on the semiconductor substrate in a matrix arrangement above the photodiode structures. The planarization layer can cover the entire semiconductor substrate and includes cavities in regions of the planarization layer corresponding to boundaries between the color filters. The cavities may be arranged at boundaries between unit pixels. The microlenses can be disposed on the planarization layer such that portions of the microlenses are arranged in the cavities of the planarization layer.06-18-2009
20090121301IMAGE CAPTURE MODULE - An image capture module includes an image sensor and a photochromic glass plate. The image sensor includes a photosensitive area. The photochromic glass plate is positioned in front of the photosensitive area, adjusting light transmittance therethrough according to current ambient light conditions, thereby adjusting exposure value of the image sensor. In addition to the image sensor and the photochromic glass plate, the image capture module may further include a lens unit and a packaging substrate. The substrate defines a cavity therein, in which the image sensor is disposed. The photochromic glass plate seals the cavity. The lens unit is disposed on the photochromic glass plate. During image capture, light enters and is transmitted through the lens unit and the photochromic glass plate, forming an image on the photosensitive area of the image sensor. The image sensor converts the visual image into digital data.05-14-2009
20090121300MICROELECTRONIC IMAGER PACKAGES AND ASSOCIATED METHODS OF PACKAGING - The microelectronic imager packages include a semiconductor die having a plurality of photo sensors, a cover spaced apart from the semiconductor die and facing the photo sensors, and a coupling structure between the semiconductor die and the cover. The coupling structure has a spacer separating the semiconductor die and the cover and an adhesive proximate to the spacer. The adhesive bonds the spacer, the semiconductor die, and the cover together.05-14-2009
20080237762Method of Fabricating Back-Illuminated Imaging Sensors Using a Bump Bonding Technique - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.10-02-2008
20090146237IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF - An image sensor and a method for manufacturing thereof include a semiconductor substrate having a plurality of unit pixels formed therein, a dielectric film formed over the semiconductor substrate, a seed lens array including a plurality of seed lenses formed spaced apart by a gap of a predetermined width over the dielectric film, a color micro lens array formed over the seed lens array, the color micro lens array including a color micro lens formed over and contacting a respective one of the seed lenses. In accordance with embodiments, each color micro lens has a thickness that is one-half the predetermined width to thereby fill the gap between the seed lenses.06-11-2009
20100117176Camera module and manufacturing method thereof - A manufacturing method of a camera module includes steps of: forming a wafer assembly of a semiconductor wafer and a light transmissible optical wafer which are fixed to each other, wherein the semiconductor wafer has an array of plural sensor units each having a light receiving unit of a photoelectric conversion element, and wherein the light transmissible optical wafer has an array of plural lens units, the lens units being opposite to the respective sensor units while each pair of the lens unit and the sensor unit faces each other across a space, so that the semiconductor wafer and the light transmissible optical wafer are adhered at circumferences of the respective pair of the lens unit and the sensor unit with a spacer unit, cutting the wafer assembly at the spacer unit to individually divide the wafer assembly into a plurality of camera modules each comprising a sensor chip and a lens chip bonded to each other by a spacer, forming a light shieldable mask film to determine a lens aperture of each of the plural lens units on the light transmissible optical wafer; forming a groove in the light transmissible optical wafer of the wafer assembly such that the groove reaches the spacer unit and filling the groove with a light shieldable resin to form a light shieldable resin layer; and cutting the light shieldable resin layer at a width less than the groove to individually divide the camera modules in each of which the light shieldable resin layer is provided at a side of the lens chip.05-13-2010
20080303107OPTICAL DEVICE AND METHOD FOR FABRICATING THE SAME, CAMERA MODULE USING OPTICAL DEVICE, AND ELECTRONIC EQUIPMENT MOUNTING CAMERA MODULE - An optical device includes a light receiving element chip having: an active region formed on a principal plane of a substrate and made by arranging a plurality of light receiving pixels; a circuit region disposed around an outer circumference of the active region; a penetrating conductor provided to penetrate the substrate in the thickness direction of the substrate; and an external connection terminal provided on a back surface of the substrate facing the principal plane thereof and connected to the penetrating conductor. The optical device further includes a microlens, a planarization film, and a transparent protective film formed on the planarization film.12-11-2008
20080265348Method of Manufacturing an Image Sensor and Image Sensor - A method of manufacturing a back-side (10-30-2008
20080265349Solid-State Image Sensor - An object of the present invention is to provide a solid-state image sensor including a filter membrane that has excellent light resistance and can be thinned. A solid-state image sensor 10-30-2008
20080265352Solid-state image capturing apparatus, method for manufacturing the same, and electronic information device - An image capturing apparatus has a plurality of solid-state image capturing devices each having light receiving sections laminated in a depth direction of a semiconductor substrate. The devices are sequentially arranged in a direction along a substrate surface. Incident light waves having wavelength bands corresponding to depths of respective light receiving sections are detected there and generate signal charges. Bands are associated with light receiving sections by the wavelength dependence of the optical absorption. Trench sections each reach from a light incident surface or an opposite substrate surface to respective light receiving sections that do not overlap each other in a plane view. Electric charge transfer sections transfer electric charges independently from the light receiving sections via side wall portions of their respective trenches to the light incident surface side or the opposite substrate surface side at the time of driving readout gate electrodes at each trench section.10-30-2008
20080265351Semiconductor device and method of fabricating the same - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.10-30-2008
20090309176METHODS FOR PROTECTING IMAGING ELEMENTS OF PHOTOIMAGERS DURING BACK SIDE PROCESSING, PHOTOIMAGERS AND SYSTEMS - Methods for processing photoimagers include forming one or more protective layers over the image sensing elements of a photoimager. Protective layers may facilitate thinning of the substrates of photoimagers, as well as prevent contamination of the image sensing elements and associated optical features during back side processing of the photoimagers. Blind vias, which extend from the back side of a photoimager to bond pads carried by an active surface of the photoimager, may be formed through the back side. The vias may be filled with conductive material and, optionally, redistribution circuitry may be fabricated over the back side of the photoimager. Photoimagers including features at result from such processes are also disclosed.12-17-2009
20100084726Wafer level packaging image sensor module having lens actuator and method of manfacturing the same - Disclosed herein is a wafer level packaging image sensor module, including a wafer including an image sensor, a circuit portion and a lower electrode on one side thereof, a lens actuator disposed on the lower electrode and made of electroactive polymer, an upper electrode disposed on the lens actuator, and a lens unit disposed on the upper electrode to allow light to be transmitted to the image sensor therethrough. The wafer level packaging image sensor module includes the lens actuator made of electroactive polymer, and thus it enables realization of the autofocusing of the wafer level packaging image sensor module.04-08-2010
20100084727PRINTED WIRING BOARD, A METHOD OF MANUFACTURING PRINTED WIRING BOARD, A SENSOR MODULE, AND A SENSING DEVICE - A printed wiring board on which a package to be arranged, including: a first layer that is relatively rigid; and a second layer that is relatively flexible and on which the package is to be soldered, wherein an area other than a package arrangement area of the second layer is joined to the first layer by an adhesion layer.04-08-2010
20090309177Wafer level camera module and method of manufacturing the same - The present invention relates to a wafer level camera module and a method of manufacturing the same and provides a wafer level camera module including a wafer provided with an image sensor on a top surface; a transparent member bonded to the wafer through anodic bonding to seal the image sensor; a spacer bonded to the transparent member through the anodic bonding by including a window to expose the image sensor; and a wafer lens bonded to the spacer through the anodic bonding to cover the window of the spacer and further a method of manufacturing the same.12-17-2009
20120187513LIGHT SENSOR HAVING IR CUT AND COLOR PASS INTERFERENCE FILTER INTEGRATED ON-CHIP - A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.07-26-2012
20120187512LIGHT SENSOR HAVING IR CUT INTERFERENCE FILTER WITH COLOR FILTER INTEGRATED ON-CHIP - Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.07-26-2012
20090267168ELECTRET CAPACITOR TYPE COMPOSITE SENSOR - To provide a small, thin and light-weighted composite sensor which can also detect light together with sound, vibration, pressure or acceleration by a single sensor.10-29-2009
20100078746SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device, an image sensor, and methods of manufacturing the same. A semiconductor device may include metal interconnections formed over a lower substrate, a hard mask formed over metal interconnections, and/or an insulating layer formed over a surface of a lower substrate. A semiconductor device may include an insulating layer including an air gap formed between metal interconnections. An image sensor may include a pixel array area having photodiodes and transistors, and/or a logic area having a plurality of transistors, which may be formed over a semiconductor substrate. An image sensor may include a metal interconnection and/or an insulating layer structure connected to transistors, and may cover a pixel array area and/or a logic area. An image sensor may include a color filter layer formed over a pixel array area, and an insulating layer structure of a pixel array area having an air gap between metal interconnections.04-01-2010
20090256225SOLID-STATE IMAGE CAPTURING DEVICE, MANUFACTURING METHOD OF THE SOLID-STATE IMAGE CAPTURING DEVICE, AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing device according to the present invention includes: a photoelectrical conversion section formed in a semiconductor substrate or in a substrate area provided on a substrate; a first transparent film provided on the photoelectrical conversion section; and a lens provided at a position above the first transparent film corresponding to the photoelectrical conversion section, where the lens is formed by using a second transparent film layered by changing a refractive index successively or incrementally, and at least one of top and bottom surfaces of the second transparent film is formed in a convex shape.10-15-2009
20110062540SOLID-STATE IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.03-17-2011
20100006968Image sensors and methods of manufacturing the same - Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.01-14-2010
20100006967SEMICONDUCTOR PHOTODETECTOR - A semiconductor photodetector comprises: a semiconductor substrate; a first multilayer reflective layer on a first surface of the semiconductor substrate and including semiconductor layers; a first optically-resonant layer on the first multilayer reflective layer; a second multilayer reflective layer on the first optically-resonant layer and including semiconductor layers; a light absorbing layer on the second multilayer reflective layer; a reflective film on the light absorbing layer; and an antireflective film on a second surface of the semiconductor substrate. The first optically-resonant layer has a larger thickness than the semiconductor layers of the first and second multilayer reflective layers. The combined optical thickness of the layers between the second multilayer reflective layer and the reflective film is not equal to the optical thickness of the first optically-resonant layer.01-14-2010
20100084728SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device according to the present invention includes light-receiving units formed on a surface in a substrate, a photo-shield film formed above the substrate and having openings above the light-receiving units, a light-transmissive insulating film formed above the photo-shield film and in the openings in the photo-shield film, downwardly convex in-layer lenses made of a material having a refractive index different from that of the light-transmissive insulating film and formed above the light-transmissive insulating film, an OCCF formed above the in-layer lenses and having a first filter and a second filter which are positioned above different ones of the light-receiving units and transmit lights of different wavelengths, and OCLs formed above the in-layer lenses. The width of the openings in the photo-shield film and the curvature of the in-layer lenses provided under the first filter and those under the second filter are different from each other, respectively.04-08-2010
20100006966Method for making lens modules and lens module made thereby - A method for making lens modules includes the steps of: a) providing a wafer including an array of sensor chips; b) mounting a plurality of lens assemblies on the sensor chips, respectively, thereby defining a plurality of intersecting spacing grooves among the lens assemblies; c) forming substrate layer by filling in the spacing grooves with a resin material; and d) cutting the wafer and the substrate layer along intersecting cutting lines each extending along one of the spacing grooves and each intervening the lens assemblies, the substrate layer being divided into a plurality of barrels respectively surrounding the lens assemblies. A lens module made by the method is also disclosed.01-14-2010
20090206433Image sensor and method for manufacturing the same - An image sensor and a method for manufacturing the same that includes a dielectric layer having a trench formed therein, a first micro-lens having a first structure formed in the trench, and a second micro-lens having a second structure formed over and contacting the first micro-lens such that the second structure is different than the first structure.08-20-2009
20090206432IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.08-20-2009
20090206431Imager wafer level module and method of fabrication and use - Imager wafer level modules, methods of assembly for imager wafer level modules, and systems containing imager wafer level modules. An imager die and an optic lens stack are combined to form a module assembly. The module assembly is combined with a molded plastic, laminated plastic, or metallic interposer to form an imager wafer level module capable of assembly using industry standard equipment sets for all processing, and capable of being used with various imaging systems.08-20-2009
20090206430SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A pattern (08-20-2009
20090256223PHOTODIODE ARRAY - A photodiode array 10-15-2009
20100123209Apparatus and Method of Manufacture for Movable Lens on Transparent Substrate - A lens stack having a movable lens attached to a MEMS structure and method of fabricating the same. The method comprises attaching at least one MEMS structure to a transparent substrate. The method further comprises forming a movable lens in contact with the at least one MEMS structure.05-20-2010
20090045477Solid-State Imager Having Anti-Reflection Film, Display, and Its Manufacturing Method - Solid-state image sensors are disclosed that include an optical unit which separates incident light into a plurality of color elements, an optical receiving unit which converts each of the color elements separated by the optical unit to an electrical signal and an anti-reflection film having a high-refractive-index layer with a refractive index of 1.7 or higher and a low-refractive-index layer with a refractive index of less than 1.7. The anti-reflection film is between the optical unit for each of color elements and the optical receiving unit, on a semiconductor substrate. Each of the high-refractive-index layer and the low-refractive-index layer corresponds to at least one color element of the plurality of color elements and includes two or more layers. With such sensors it is possible to suppress the variation in sensitivity for each color.02-19-2009
20090090989Image Sensor and Method of Manufacturing the Same - An image sensor and a manufacturing method thereof are provided. The image sensor can comprise: a semiconductor substrate, a first dielectric, a second dielectric pattern, a planarization layer, and a color filter. The semiconductor substrate comprises a photodiode. The first dielectric is disposed on the semiconductor substrate. The second dielectric pattern is disposed on the first dielectric and comprises a trench in a region corresponding to the photodiode. The planarization layer is disposed in the trench. The color filter is disposed on the planarization layer disposed on the photodiode.04-09-2009
20080211045Module for optical apparatus and method of producing module for optical apparatus - An electric wiring of a module for an optical apparatus includes: a first through electrode passing through the solid-state image sensor; a first rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the solid-state image sensor, and being electrically connected to the first through electrode; a second rewiring layer being formed in such a way as to be re-wired to a necessary area in the rear surface of the image processing apparatus, and being electrically connected to the first rewiring layer; a second through electrode passing through the image processing apparatus and being electrically connected to the second rewiring layer; and a third rewiring layer being formed in such a way as to be re-wired to a necessary area in a front surface of the image processing apparatus, and being electrically connected to the second through electrode. The image processing apparatus includes an external connection terminal electrically connected to the third rewiring layer. With the foregoing structure, a small and light module for an optical apparatus and a production method of such module are realized without giving a constraint on the structure of the module.09-04-2008
20090108386Image Sensor and Method for Manufacturing the Same - Provided is an image sensor and method for manufacturing the same. The image sensor includes a semiconductor substrate including a photodiode for each unit pixel, an interlayer insulating layer including metal lines on the semiconductor substrate, and an optical refractive part in a region of the interlayer insulating layer corresponding to the photodiode for focusing light on the photodiode. The optical refractive part can be formed by implanting impurities into the interlayer insulating layer.04-30-2009
20090273047SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - To a transparent substrate (11-05-2009
20110198716IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other.08-18-2011
20090294886METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR - An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.12-03-2009
20090289316OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device comprises a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially formed on a semiconductor substrate; wherein said Bragg reflection layer of the first conductivity type has first semiconductor layers having a band gap wavelength larger than the wavelength of incident light, and second semiconductor layers having a band gap wavelength smaller than the wavelength of incident light; and an optical layer thickness of each of said first semiconductor layers is larger than the optical layer thickness of each of said second semiconductor layers.11-26-2009
20110169119METHODS TO FABRICATE AND IMPROVE STAND-ALONE AND INTEGRATED FILTERS - Embodiments of the invention provide for fabricating a filter, for electromagnetic radiation, in at least three ways, including (1) fabricating integrated thin film filters directly on a detector; (2) fabricating a free standing thin film filter that may be used with a detector; and (3) treating an existing filter to improve the filter's properties.07-14-2011
20110169117Cross-Talk Suppression in Geiger-Mode Avalanche Photodiodes - An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.07-14-2011
20090294885Silicon Nanoparticle Embedded Insulating Film Photodetector - A photodetector is provided with a method for fabricating a semiconductor nanoparticle embedded Si insulating film for photo-detection applications. The method provides a bottom electrode and introduces a semiconductor precursor and hydrogen. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a semiconductor nanoparticle embedded Si insulating film is formed, where the Si insulating film includes either N or C elements. For example, the Si insulating film may be a non-stoichiometric SiO12-03-2009
20110169118OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention is has an object of providing an optical device miniaturized while maintaining bonding strength between a semiconductor substrate and a light-transmissive plate, reducing possibility of warpage, and maintaining yields and design flexibility, a method of manufacturing the optical device, and an electronic apparatus. The optical device according to the present invention includes a semiconductor substrate having one surface in which a light-receiving element is formed; and a light-transmissive plate provided above the semiconductor substrate so as to cover the light-receiving element. The semiconductor substrate and the light-transmissive plate are partially bonded above a light-receiving unit of the semiconductor substrate. The light-receiving element is formed in the light-receiving unit.07-14-2011
20110204463WAVELENGTH OPTICAL FILTER STRUCTURE AND ASSOCIATED IMAGE SENSOR - The invention relates to an optical filter structure composed of at least two adjacent elementary optical filters, an elementary optical filter being centred on an optimum transmission frequency, characterised in that it comprises a stack of n metallic layers (m08-25-2011
20090261440MICROLENS UNIT AND IMAGE SENSOR - In a microlens unit (MSU), at least part of the edges of microlenses (MS) (convex lenses MS[BG]) supported on elevations (BG) overlap with trenches (DH) in a direction (VV) perpendicular to the surface of a flattening film (10-22-2009
20090261439MICROLENS ARRAY AND IMAGE SENSING DEVICE USING THE SAME - A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.10-22-2009
20090039453SEMICONDUCTOR LIGHT RECEIVING DEVICE - The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (02-12-2009
20090039454SOLID-STATE IMAGE PICKUP DEVICE AND FABRICATION METHOD THEREOF - Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filters 02-12-2009
20100044820CMOS IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A CMOS image sensor is disclosed. The image sensor includes a plurality of polysilicon patterns provided on a silicon epitaxial layer which correspond to the location of a plurality of photodiodes provided in a dummy pixel area, a silicide layer of metal with a high melting point provided on the plurality of the polysilicon patterns, a device protecting layer and a planarization layer provided on the silicon epitaxial layer and silicide layer, and a plurality of microlenses on the planarization layer which correspond to the location of the silicide layer.02-25-2010
20120292726SENSOR INTEGRATED SLIT FOR PUSHBROOM HYPERSPECTRAL SYSTEM - An entry slit panel for a push-broom hyperspectral camera is formed at least partly from a silicon wafer on which at least one companion sensor is fabricated, whereby the companion sensor is co-planar with the slit and detects light imaged on the panel but not on the slit. In embodiments, the companion sensor is a panchromatic sensor or a sensor that detects light outside the wavelength range of the camera. At least a region of the wafer is back-thinned to a thickness appropriate for a diffraction slit. The slit can be etched or laser cut through the thinned region, or formed between the wafer and another wafer or a conventional blade. The wafer can be back-coated or metalized to ensure its opacity across the camera's wavelength range. The companion sensor can be located relative to the slit to detect scene features immediately before or after the hyperspectral camera.11-22-2012
20120292727OPTICAL SENSOR - An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.11-22-2012
20100283111Photo detector - Disclosed is an improved photo detector, which includes a substrate, a light reception chip, and a coating layer. The substrate includes a first electrode member and a second electrode member. The light reception chip is set on the substrate and is electrically connected to the first and second electrode members of the substrate. The coating layer is formed on the light reception chip and functions to filter out visible light and allows only invisible light to transmit therethrough. As such, efficacies of receiving only visible light and minimizing the overall size can be realized.11-11-2010
20100283113WAFER SCALE ARRAY OF OPTICAL PACKAGE AND METHOD FOR FABRICATING THE SAME - A wafer-scale array of optical packages and a method for fabricating the same. The wafer-scale array of optical packages includes at least one wafer-scale array of lens structures, including a wafer-scale array of first barrel structures and a wafer-scale array of lenses directly formed on the wafer-scale array of first barrel structures such that the wafer-scale array of lenses is integrally combined with the wafer-scale array of first barrel structures, the wafer-scale array of first barrel structures being made of a material different from a material of the lens of the wafer-scale array of lenses; and at least one wafer-scale array of second barrel structures stacked on and combined with the at least one wafer-scale array of lens structures.11-11-2010
20100102409Image sensor element and image sensor - An image sensor element is provided according to an embodiment which comprises image sensor element portions sensitive to at least partially different wavelength ranges.04-29-2010
20080246106Integrated circuits having photonic interconnect layers and methods for fabricating same - Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.10-09-2008
20080246107SOLID STATE IMAGING DEVICE AND FABRICATION METHOD OF SOLID STATE IMAGING DEVICE - A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above the substrate; a photoelectric conversion film on or above the lower electrode; and an upper electrode on or above the photoelectric conversion film. The device further comprises: a first inorganic material film that protects each of the photoelectric conversion portions, is formed by a first method and is above the upper electrode and below the color filters; a second inorganic material film that prevents characteristic deterioration of the photoelectric conversion portion caused by the first method, is formed by a second method and is between the upper electrode and the first inorganic material film; and a polymeric material film that enhances a function of the first inorganic material film and is on or above the first inorganic material film.10-09-2008
20110204462METHOD AND APPARATUS PROVIDING AN IMAGER MODULE WITH A PERMANENT CARRIER - Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.08-25-2011
20100155868IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed are an image sensor and a manufacturing method thereof. The image sensor includes a circuit layer on a first surface of a semiconductor substrate, a metal interconnection layer on the circuit layer, trenches formed in a second surface of the semiconductor substrate along a boundary of a pixel, and a light blocking layer in the trenches. The backside illumination type image sensor according to the embodiment has a light blocking structure at a rear surface of the semiconductor substrate, thereby improving sensing efficiency while inhibiting interference between adjacent pixels.06-24-2010
20080237766IMAGE SENSING DEVICES INCLUDING IMAGE SENSOR CHIPS, IMAGE SENSOR PACKAGE MODULES EMPLOYING THE IMAGE SENSING DEVICES, ELECTRONIC PRODUCTS EMPLOYING THE IMAGE SENSOR PACKAGE MODULES, AND METHODS OF FABRICATING THE SAME - An image sensor package includes an image sensor chip, a handling substrate mounted on a front side of the image sensor chip and a through electrode disposed on a backside of the image sensor chip. The through electrode extends into the image sensor chip. Moreover, the image sensor chip includes a semiconductor substrate having a pixel region and a peripheral circuit region, a photoelectric transformation section disposed in the semiconductor substrate of the pixel region and a dielectric layer disposed on a front surface of the semiconductor substrate. The dielectric layer has a step region so that a top surface of the dielectric layer in the pixel region is lower than that of the dielectric layer in the peripheral circuit region. The image sensor chip further includes a conductive pad disposed on the dielectric layer in the peripheral circuit region and is electrically connected to the through electrode.10-02-2008
20090166784SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Gold bumps are located over electrode pads of a solid imaging device and an adhesive is formed over the gold bumps. A transparent plate is supported by the gold bumps and is made to adhere over the solid imaging device by the adhesive. The gold bumps and an electrode and wiring pattern formed over a circuit board are connected by gold wires. At this time the gold wires are approximately parallel to the circuit board near portions where the gold wires and the gold bumps are connected. As a result, it is easy to locate the transparent plate over the portions where the gold wires and the gold bumps are connected. By locating the adhesive over the portions where the gold wires and the gold bumps are connected, the solid imaging device can be made small and light. As a result, a smaller lighter semiconductor device is fabricated.07-02-2009
20080277750Layout Method for Mask, Semiconductor Device and Method for Manufacturing the Same - A mask layout method, semiconductor device and method for fabricating the same using a mask created according to the subject mask layout method are provided. The semiconductor device can include a microlens main pattern on a substrate and a microlens dummy pattern at a side of the microlens main pattern. The microlens dummy pattern can be formed in plurality using a mask created by the subject mask layout method. According to an embodiment of the subject mask layout method, a microlens dummy pattern can be created by forming a base dummy pattern and removing edge areas from the base dummy pattern. The microlens dummy pattern can be created to have a substantially circular shape. In one embodiment, the substantially circular shape can be an octagon.11-13-2008
20080277749Light-Sensitive Component with Increased Blue Sensitivity, Method for the Production Thereof, and Operating Method - A light-sensitive component which has a semiconductor junction between a thin relatively highly doped epitaxial layer and a relatively lightly doped semiconductor substrate. Outside a light incidence window, an insulating layer is arranged between epitaxial layer and semiconductor substrate. In this case, the thickness of the epitaxial layer is less than 50 nm, with the result that a large proportion of the light quanta incident in the light incidence window can be absorbed in the lightly doped semiconductor substrate.11-13-2008
20080283949Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor comprises a pixel region defined on a substrate, an interlayer dielectric on the substrate and comprising a trench above the pixel region, a color filter within the trench, and a microlens on the color filter.11-20-2008
20080283948SEMICONDUCTOR DEVICE HAVING IMAGE SENSOR - A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.11-20-2008
20080290437IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor that includes a contact plug formed in the substrate; a lower electrode formed on the contact plug; a photo diode formed on the lower electrode, the photo diode having a carbon nanotube provided therein; and an upper electrode formed on the photo diode. The photo diode can function as a color photo diode 11-27-2008
20080303106IMAGE SENSOR PACKAGE AND PACKAGING METHOD FOR THE SAME - An image sensor package includes a substrate, a sensor chip, a frame, a lens element and at least a pair of guide pins. The sensor chip is mounted on the substrate, and has two opposite sides and a sensing region, which has a sensing region central axis. The frame is mounted on the substrate, and has an aperture and an inner space with the sensor chip disposed therein. The lens element is disposed inside the aperture and has a lens central axis. The guide pins locate oppositely inside the inner space of the frame with an interval between the tips of the guide pins substantially identical to the distance between the opposite sides of the sensor chip, wherein the central line of the interval between the tips of the guide pins defines a positioning line, which substantially coincides with the lens central axis; wherein the tip of each guide pin is aligned with one of the opposite sides of the sensor chip such that the positioning line is substantially coincided with the sensing region central axis.12-11-2008
20080265350IMAGE CAPTURING DEVICE - An image capturing device includes an image sensor package and a lens module aligned with the image sensor package. The image sensor package includes a substrate, at least one passive component, an insulative layer, and an image sensor. The substrate has a surface facing an object side of the image capturing device, the surface defines a cavity therein. The at least one passive component is disposed within the cavity and electrically connected to the substrate. The insulative layer is received in the cavity and encases the at least one passive component. The image sensor is disposed on the insulative layer and electrically connected to the substrate. The holder has an end connecting with the barrel and an opposite end secured on the substrate.10-30-2008
20090032895Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor comprises at least one unit pixel, an interlayer dielectric, a color filter, a planarization layer, and a microlens. The microlens has a smooth surface after performing a plasma treatment process.02-05-2009
20090014824SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CAMERA HAVING THE DEVICE - Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.01-15-2009
20080211046SEMICONDUCTOR DEVICE FOR IMAGE SENSOR - Embodiments relate to a semiconductor device for an image sensor method of fabricating a semiconductor device for an image sensor having a micro lens. According to embodiments, the method may include forming a lower insulating film having cavities on a substrate, forming an upper insulating film having cavities on the lower insulating film, forming a protective insulating film having metal films on the upper insulating film, forming a number of color filters having a specified pattern on the protective insulating film, forming a planarization layer having a specified curvature on the color filters to bury the color filters in the planarization layer, and forming a number of micro lenses on the planarization layer at respective positions corresponding to the color filters.09-04-2008
20080272452IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor that includes a hard mask layer formed in the upper surface region of the planarization layer and under a microlens to protect an underlying planarization layer from chemicals used during performing a cleaning process after formation of the microlens. The microlens is composed of inorganic materials to prevent cracking by physical impacts.11-06-2008
20080272450PORTABLE OPTICAL DETECTION CHIP AND MANUFACTURING METHOD THEREOF - A portable optical detection chip comprises a substrate, a plurality of avalanche-type photosensitive device modules and a plurality of plane mirrors. The plurality of avalanche-type photosensitive device modules are formed on the substrate, and each of them comprises a plurality of avalanche-type photosensitive devices and a plurality of lenses. Each of the lenses is stacked on one of the avalanche-type photosensitive devices. The plurality of plane mirrors are disposed between the avalanche-type photosensitive device modules. That is, the avalanche-type photosensitive device modules are separated from each other by the plane mirrors.11-06-2008
20080272451Image Sensor and Method of Manufacturing The Same - An image sensor and method of manufacturing the same are provided. The image sensor can include a semiconductor substrate having unit pixels; an interlayer dielectric layer formed on the semiconductor substrate and including metal interconnections; a first protective layer comprising an oxide layer formed on the interlayer dielectric layer; a second protective layer comprising an oxide-nitride layer formed on the first protective layer; and a microlens formed on the second protective layer.11-06-2008
20090001492Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor can comprise a substrate, a metal pad, and a sulfur layer. The substrate can include a pixel region and a pad region. The metal pad can be formed of a material containing sulfur and can be diposed in the pad region of the substrate. The sulfur layer can be formed from the sulfur of the metal pad and provided on a top surface of the metal pad.01-01-2009
20080265353Solid-state imaging device and method for fabricating the same related application data - A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.10-30-2008
20080265354Image sensor - An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.10-30-2008
20090090988SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device includes: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.04-09-2009
20090085134Wafer-level image sensor module, method of manufacturing the same, and camera module - Provided is a wafer-level image sensor module including a wafer; an image sensor mounted on the wafer; a transparent member installed above the top surface of the wafer so as to seal the image sensor; a plurality of vias formed in the wafer so as to be positioned outside the transparent member; a plurality of upper pads formed on the upper ends of the respective vias; an encapsulation portion formed on the top surface of the wafer so as to be positioned outside the transparent member; and a plurality of external connection members that are electrically connected to the lower ends of the respective vias.04-02-2009
20110204461Stack-type image sensor - Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided.08-25-2011
20080258249CMOS image sensor and method for fabricating the same - A CMOS image sensor and a method for fabricating the same improve photosensitivity by imparting a color filter layer with the function of a microlens layer. The CMOS image sensor includes a semiconductor substrate; a plurality of photo-sensing elements formed in the semiconductor substrate; and a color filter layer comprised of a plurality of color filters for filtering light according to wavelength, wherein the plurality of color filters correspond to the plurality of photo-sensing elements and each color filter has a predetermined curvature for focusing light and for transmitting the focused light according to a corresponding wavelength.10-23-2008
20080258248Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.10-23-2008
20100270636ISOLATION STRUCTURE FOR BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated image sensor includes an isolation structure passing through a substrate, a sensor element formed overlying the front surface of the substrate, and a color filter formed overlying the back surface of the substrate.10-28-2010
20110266645Back Side Illuminated Image Sensor With Back Side Pixel Substrate Bias - Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes an isolation feature disposed in the substrate. The image sensor further includes a radiation-sensing region disposed in the substrate and adjacent to the isolation feature. The radiation-sensing region is operable to sense radiation projected toward the radiation-sensing region from the back side. The image sensor also includes a transparent conductive layer disposed over the back side of the substrate.11-03-2011
20090184384ARRAY OF MUTUALLY ISOLATED, GEIGER-MODE, AVALANCHE PHOTODIODES AND MANUFACTURING METHOD THEREOF - An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.07-23-2009
20090127646IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a manufacturing method thereof are provided. The image sensor can include a semiconductor substrate having a photodiode, an interlayer dielectric layer on the semiconductor substrate, and an upper insulating layer on the interlayer dielectric layer. A trench can be provided in the upper insulating layer and the interlayer dielectric layer over the photodiode, and the trench can have a curved sidewall. A lens color filter can be disposed in the trench.05-21-2009
20090127643PHOTODIODE OF AN IMAGE SENSOR AND FABRICATING METHOD THEREOF - A method for fabricating a photodiode of an image sensor includes providing a substrate having a first conductive type and photo sensing regions, respectively forming photodiodes in the photo sensing region, and performing an ion implantation to form an implanted reflective layer having a second conductive type under the plurality of photodiodes for reflecting light and creating depletion regions in the substrate.05-21-2009
20100200943Photosensitive cell with light guide - An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.08-12-2010
20100200942SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.08-12-2010
20100200941PHOTODIODE, OPTICAL COMMUNICATION DEVICE, AND OPTICAL INTERCONNECTION MODULE - Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.08-12-2010
20090184383PHOTODETECTOR - A semiconductor photodetector is disclosed which can have a high responsivity, high saturation power, and high bandwidth. The photodetector comprises a waveguide structure comprising: an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a corresponding electrical signal; a carrier collection layer for transporting the charge carriers conveying the electrical signal; and a secondary waveguide immediately adjacent to the carrier collection layer, for receiving the photons to be detected, and which is evanescently coupled to the active waveguide. The secondary passive waveguide layer in the photodetector epitaxial structure enables the use of fast carrier transport material to generate high intrinsic bandwidth and travelling wave techniques associated with a scheme of evanescent coupling to increase the responsivity, saturated output power and bandwidth. This enables a detector with an ultra-thin absorption layer implying a high intrinsic bandwidth for the device. This can be combined with a travelling wave technique to overcome the limitation on the bandwidth due to the depletion capacitance, resulting in a high bandwidth, high responsivity, high power photodetector.07-23-2009
20090184385OPTICAL SEMICONDUCTOR PACKAGE WITH COMPRESSIBLE ADJUSTMENT MEANS - An optical semiconductor package includes a support with a passage to receive a ring holding a lens situated facing an optical sensor. The support has, in the passage, at least one local release recess and the ring is equipped peripherally with a locally projecting, elastically deformable element. The local release recess and the elastically deformable element are such that, when the ring occupies an angular mounting position, the locally projecting elastically deformable element is engaged in the local recess of the support and, when the ring is pivoted from the aforementioned angular mounting position, the locally projecting elastically deformable element is moved out of the recess of the support and is compressed against the wall of the passage in order to secure the ring relative to the support.07-23-2009
20090140361Image Sensor and Method of Manufacturing the Same - An image sensor and manufacturing method thereof are provided. The image sensor can includes a semiconductor substrate including a light receiving element, a metal interconnection layer having a trench, a guide pattern on a sidewall of the trench, and a color filter in the trench. Since the color filter can be formed in the trench, a length of a light path can be reduced, thereby improving the performance of the image sensor.06-04-2009
20090140360IMAGE SENSOR AND FABRICATING METHOD THEREOF - An image sensor and fabricating method thereof may include a semiconductor substrate, a plurality of photodiodes formed on and/or over the semiconductor substrate, a first insulating layer formed on and/or over the semiconductor substrate including the plurality of photodiodes, at least one metal line formed on and/or over the first insulating layer, a second insulating layer having a plurality of wells formed on and/or over the plurality of photodiodes, a plurality of color filters formed by embedding color filter layers in a plurality of the wells, and a plurality of microlenses formed on and/or over the color filters.06-04-2009
20120068293SEMICONDUCTOR DEVICE HAVING IMAGE SENSOR - A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.03-22-2012
20120068292POLYMERIZABLE COMPOSITION, AND PHOTOSENSITIVE LAYER, PERMANENT PATTERN, WAFER-LEVEL LENS, SOLID-STATE IMAGING DEVICE AND PATTERN FORMING METHOD EACH USING THE COMPOSITION - A polymerizable composition contains (A) a polymerization initiator that is an acetophenone-based compound or an acylphosphine oxide-based compound, (B) a polymerizable compound, (C) at least either a tungsten compound or a metal boride, and (D) an alkali-soluble binder.03-22-2012
20120068290SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND CAMERA MODULE - According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.03-22-2012
20120068289Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods - Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.03-22-2012
20120068288MANUFACTURING METHOD OF MOLDED IMAGE SENSOR PACKAGING STRUCTURE WITH PREDETERMINED FOCAL LENGTH AND THE STRUCTURE USING THE SAME - A manufacturing method of a molded image sensor packaging structure with a predetermined focal length and the structure using the same are disclosed. The manufacturing method includes: providing a substrate; providing a sensor chip disposed on the substrate; providing a lens module set over the sensing area of the chip to form a semi-finished component; providing a mold that has an upper mold member with a buffer layer; disposing the semi-finished component into the mold to form a mold cavity therebetween; injecting a molding compound into the mold cavity; and after transfer molding the molding compound, opening the mold and performing a post mold cure process to cure the molding compound. The buffer layer can fill the air gap between the upper surface of the lens module and the upper mold member, thereby preventing the upper surface of the lens module from being polluted by the molding compound.03-22-2012
20090050994METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH ELECTRODE FOR EXTERNAL CONNECTION AND SEMICONDUCTOR DEVICE OBTAINED BY MEANS OF SAID METHOD - A circuit element is disposed on an organic substrate and is connected to a wiring pattern provided on the organic substrate. Internal connection electrodes are formed on a support of a conductive material through electrofomiing such that the internal connection electrodes are integrally connected to the support. First ends of the internal connection electrodes integrally connected by the support are connected to the wiring pattern. After the circuit element is resin-sealed, the support is removed so as to separate the internal connection electrodes from one another. Second ends of the internal connection electrodes are used as external connection electrodes on the front face, and external connection electrodes on the back face are connected to the wiring pattern.02-26-2009
20090206435Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device - A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heatflowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.08-20-2009
20090321864CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - A CMOS image sensor manufacturing method may include forming an interlayer insulating film over a semiconductor substrate in which a plurality of photodiodes are formed, forming a plurality of color filter layers corresponding to the photodiodes over the interlayer insulating film, forming a flattening layer over an entire surface of the semiconductor substrate including the respective color filter layers, forming gap insulating films over the flattening layer and over boundaries of the color filter layers, and forming micro-lenses over the flattening layer between the gap insulating films, to correspond to the respective photodiodes.12-31-2009
20090321866IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor of a semiconductor and a method for fabricating the same includes a photodiode; an interlayer dielectric layer formed over the photodiode; a wave guide including an ion implantation layer formed in the interlayer dielectric; a color filter formed over the interlayer dielectric layer; and a micro lens formed over the color filter.12-31-2009
20090321863Method and apparatus providing an imager module with a permanent carrier - Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.12-31-2009
20110140221IMAGE SENSOR HAVING CURVED MICRO-MIRRORS OVER THE SENSING PHOTODIODE AND METHOD FOR FABRICATING - The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).06-16-2011
20110140222PASSIVATION PLANARIZATION - A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. A spin-on glass layer may be deposited over the non-uniform passivation layer prior to planarization. Once a uniform, flat first passivation layer is achieved over the final metal, a second passivation layer, a color filter array, or a lens forming layer with uniform thickness is formed over the first passivation layer. The passivation layers can be oxide, nitride, a combination of oxide and nitride, or other suitable materials. The color filter array layer may also undergo a planarization process prior to formation of the lens forming layer. The present invention is also applicable to other devices.06-16-2011
20120104529COLORED COMPOSITION FOR LIGHT-SHIELDING FILM, LIGHT-SHIELDING PATTERN, METHOD FOR FORMING THE SAME, SOLID-STATE IMAGE SENSING DEVICE, AND METHOD FOR PRODUCING THE SAME - The present invention provides a colored composition for a light-shielding film including at least one selected from titanium atom-containing black titanium pigments and at least one organic pigment selected from the group consisting of a red organic pigment, a yellow organic pigment, a violet organic pigment, and an orange color organic pigment, which has a maximum value of the transmittance of light having a wavelength of 400 to 700 nm of 1.5% or less when a film is formed such that the light transmittance at a wavelength of 650 nm is 0.2%, has a wavelength showing the maximum transmittance at 400 to 550 nm, and has a light transmittance at a wavelength of 400 nm of 0.1% or more.05-03-2012
20120104528WAFER-LEVEL PACKAGED MICROELECTRONIC IMAGERS AND PROCESSES FOR WAFER-LEVEL PACKAGING - The following disclosure describes several embodiments of (1) methods for wafer-level packaging of microelectronic imagers, (2) methods of forming electrically conductive interconnects in microelectronic imagers, (3) methods for forming optical devices for microelectronic imagers, and (4) microelectronic imagers that have been packaged using wafer-level packaging processes. Wafer-level packaging of microelectronic imagers is expected to significantly enhance the efficiency of manufacturing microelectronic imagers because a plurality of imagers can be packaged simultaneously using highly accurate and efficient processes developed for packaging semiconductor devices. Moreover, wafer-level packaging of microelectronic imagers is expected to enhance the quality and performance of such imagers because the semiconductor fabrication processes can reliably align an optical device with an image sensor and space the optical device apart from the image sensor by a desired distance with a higher degree of precision.05-03-2012
20120104525IMAGE SENSOR WITH COLOR PIXELS HAVING UNIFORM LIGHT ABSORPTION DEPTHS - An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.05-03-2012
20120104523Solid-state imaging device manufacturing method of solid-state imaging device, and electronic apparatus - A solid-state imaging device includes a substrate, a photodiode region which is formed in the substrate and generates a signal charge using photoelectric conversion of light which is incident from a back surface side of the substrate, a wiring layer which is formed on a front surface side of the substrate which is a side opposite to a light incidence surface, a light-blocking wiring which is formed in the wiring layer and is formed in a region which covers at least a portion of the photodiode region, and a connection portion which supplies a predetermined voltage from the light-blocking wiring to the photodiode region.05-03-2012
20090085136Image sensor and method for manufacturing the same - An image sensor and method of manufacturing the same are provided. The image sensor can comprise a photodiode region an interlayer dielectric, and a microlens. The interlayer dielectric can have a trench over the photodiode region, and the microlens can be disposed in the trench such that the microlens fills the trench.04-02-2009
20090085135Image Sensor and Manufacturing Method Thereof - Provided are embodiments of an image sensor. The image sensor can comprise a first substrate including a transistor circuit, a lower interconnection layer, an upper interconnection layer, and a second substrate including a vertical stacked photodiode. The lower interconnection layer is disposed on the first substrate and comprises a lower interconnection connected to the transistor circuit. The upper interconnection layer is disposed on the lower interconnection layer and comprises an upper interconnection connected with the lower interconnection. The vertical stacked photodiode can be disposed on the upper interconnection layer and connected with the upper interconnection through, for example, a single plug connecting a blue, green, and red photodiode of the vertical stack or a corresponding plug for each of the blue, green, and red photodiode of the vertical stack.04-02-2009
20090102000CMOS IMAGE SENSOR DEVICE AND ITS FORMATION METHOD - A method for forming a CMOS image sensor (CIS) in accordance with embodiments includes sequentially forming a first photoresist and a blocking layer over a semiconductor substrate where a logic section including a photodiode may be formed. A micro lens array pattern may be formed by coating a second photoresist over top of the formed blocking layer, patterning the second photoresist, and then etching the blocking layer by using the patterned second photoresist as a mask. The first photoresist may be patterned by performing isotropic etching using the micro lens array pattern as a mask. A micro lens array may be formed by filling a material having a refractivity higher than that of the first PR in the patterned portion of the first photoresist. The sensitivity of the CIS can be optimized by maximizing the fill factor while maintaining the spherical surface of the lens by fabricating a micro lens array using anisotropic etching.04-23-2009
20110221020WAFER LENS ARRAY AND METHOD FOR MANUFACTURING THE SAME - A wafer lens array comprising a plurality of lens sections arranged one-dimensionally or two-dimensionally, a substrate section connecting the lens sections, and gap sections, wherein the lens surfaces in the lens section each have one or more curved surfaces; the gap section is a part projecting from outside than the inner edge of the lens section; and the inner surfaces of the gap sections are spread from a side near the lens section to the other side.09-15-2011
20090127645In-line light sensor - The sensor includes an optical waveguide defined in a light-transmitting medium. The waveguide includes a sensing portion and an non-sensing portion. The light-transmitting medium included in the sensing portion has defects that provide the light-transmitting medium with a deep band gap level between a valence band of the light-transmitting medium and a conduction band of the light-transmitting medium. The deep band gap level is configured such that the waveguide guiding light signals through the light-transmitting medium in the sensing portion causes free carriers to be generated in the light-transmitting medium. A detector is configured to detect the free carriers in the sensing region of the waveguide.05-21-2009
20090224349IMAGE SENSOR INCLUDING SPATIALLY DIFFERENT ACTIVE AND DARK PIXEL INTERCONNECT PATTERNS - An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.09-10-2009
20090200627Image sensor with high conversion efficiency - An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.08-13-2009
20090200626BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.08-13-2009
20090200623IMAGE SENSOR WITH MICRO-LENSES OF VARYING FOCAL LENGTHS - An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.08-13-2009
20090230492Solid-state image pickup device and method of manufacturing the same - A solid-state image pickup device which includes a substrate carrying a plurality of photoelectric conversion elements which are two-dimensionally arranged therein the substrate having a plurality of rectangular light-receiving faces each corresponding to the photoelectric conversion element, a flattening layer having a plurality of approximately rectangular concave faces each located to correspond to the light-receiving faces, and a color filter having color layers of plural kinds of colors and buried in the concave faces of the flattening layer, the color filter exhibiting a larger refractive index than that of the flattening layer, wherein the color layers are respectively enabled to function as a convex lens.09-17-2009
20090230491PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD - A photoelectric conversion device comprises: a plurality of photoelectric conversion units each generating charges corresponding to light; an element isolation portion which electrically isolate the plurality of photoelectric conversion units; and an antireflection portion which are arranged to prevent reflection of light, which has entered the element isolation portion from above the element isolation portion, only on a bottom face of the element isolation portion or only on the bottom face and a lower part of a side face of the element isolation portion.09-17-2009
20090200622SELF-ALIGNED FILTER FOR AN IMAGE SENSOR - An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.08-13-2009
20090212381WAFER LEVEL PACKAGES FOR REAR-FACE ILLUMINATED SOLID STATE IMAGE SENSORS - A solid state image sensor includes a microelectronic element having a front face and a rear face remote from the front face, the rear face having a recess extending towards the front surface. A plurality of light sensing elements may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. Electrically conductive package contacts may directly overlie the light sensing elements and the front face and be connected to chip contacts at the front face through openings in an insulating packaging layer overlying the front face.08-27-2009
20090243012ELECTROMAGNETIC INTERFERENCE SHIELD STRUCTURES FOR SEMICONDUCTOR COMPONENTS - A microelectronic device assembly with an integrated conductive shield is disclosed herein. The microelectronic device assembly includes a semiconductor substrate, an integrated circuit carried by the semiconductor substrate, a dielectric encapsulant encasing at least a portion of the semiconductor substrate. The microelectronic device assembly also includes a conductive shield in direct contact with at least a portion of the dielectric encapsulant and an interconnect extending through the semiconductor substrate and in direct contact with the conductive shield.10-01-2009
20090256227METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS USING A BUMP BONDING TECHNIQUE - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.10-15-2009
20090256226SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.10-15-2009
20110227180SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a solid-state imaging device includes a multilayer wiring layer, a semiconductor substrate, an impurity diffusion region of a second conductivity type, an anti-reflection film, a color filter, and a metallic layer. The semiconductor substrate is provided on the multilayer wiring layer and includes a first conductivity type layer. The impurity diffusion region of the second conductivity type partitions the first conductivity type layer into a plurality of regions. The anti-reflection film is provided on the semiconductor substrate. The color filter is provided on the anti-reflection film for each of the partitioned regions. The metallic layer is formed in a region of a lower surface of the semiconductor substrate except the partitioned regions. The anti-reflection film is not provided in a region immediately above the metallic layer.09-22-2011
20090243014Image Sensor - Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.10-01-2009
20090250779SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device in the present invention includes plural photoelectric conversion elements, plural wiring layers, and plural optical waveguide regions each corresponding to and arranged over one of the plural photoelectric conversion elements. A top end of each of the plural optical waveguide regions is higher than a top end of at least one of the plural wiring layers. A bottom end of each of the plural optical waveguide regions is lower than a bottom end of at least one of the plural wiring layers. The plural optical waveguide regions include plural types of optical waveguide regions each having different light absorbing characteristics.10-08-2009
20090250777IMAGE SENSOR AND IMAGE SENSOR MANUFACTURING METHOD - In an upper waveguide structure (10-08-2009
20090256228MICRO-LENSES FOR CMOS IMAGERS AND METHOD FOR MANUFACTURING MICRO-LENSES - A micro-lens and a method for forming the micro-lens is provided. A micro-lens includes a substrate and lens material located within the substrate, the substrate having a recessed area serving as a mold for the lens material. The recessed can be shaped such that the lens material corrects for optical aberrations. The micro-lens can be part of a micro-lens array. The recessed area can serve as a mold for lens material for the micro-lens array and can be shaped such that the micro-lens array includes arcuate, non-spherical, or non-symmetrical micro-lenses.10-15-2009
20090256222Packaging method of image sensing device - A packaging method for an image sensing device is disclosed. The packaging method includes the steps of a) providing an annular dam on a substrate; b) mounting an image sensing module, having a light-receiving region exposed, inside the annular dam on the substrate; c) connecting the image sensing module and the substrate via a plurality of bonding wires; d) forming a barrier around the light-receiving region on the image sensing module; e) filling an adhesive between the barrier and the annular dam with the plurality of bonding wires being encapsulated; f) forming a transparent lid above the light-receiving region; and g) cutting off the annular dam.10-15-2009
20090256224INTEGRATED CIRCUIT COMPRISING MIRRORS BURIED AT DIFFERENT DEPTHS - A semiconductor structure including a first active area under which is buried a first reflective layer and a least one second active area under which is buried a second reflective layer, wherein the upper surface of the second reflective layer is closer to the upper surface of the structure than the upper surface of the first reflective layer.10-15-2009
20100264504IMAGE SENSOR HAVING WAVE GUIDE AND METHOD FOR MANUFACTURING THE SAME - An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.10-21-2010
20100264503SOLID-STATE IMAGING DEVICE COMPRISING THROUGH-ELECTRODE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a through-electrode and a first electrode. The imaging element is formed on a first major surface of a semiconductor substrate. The external terminal is formed on a second major surface opposing the first major surface of the semiconductor substrate. The insulating film is formed in a through-hole formed in the semiconductor substrate. The through-electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first electrode is formed on the through-electrode on the first major surface of the semiconductor substrate. When viewed from a direction perpendicular to the first major surface of the semiconductor substrate, an outer shape with which the insulating film and the semiconductor substrate are in contact is larger than an outer shape of the first electrode.10-21-2010
20090283847SEMICONDUCTOR PACKAGE INCLUDING THROUGH-HOLE ELECTRODE AND LIGHT-TRANSMITTING SUBSTRATE - An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.11-19-2009
20090315132SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SAME - In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side and charges electron by photoelectric conversion. A first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer and a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.12-24-2009
20090315131SENSOR STRUCTURE FOR OPTICAL PERFORMANCE ENHANCEMENT - The present disclosure provides an image sensor semiconductor device. The image sensor semiconductor device includes an image sensor disposed in a semiconductor substrate, an inter-level dielectric (ILD) layer disposed on the semiconductor substrate, inter-metal-dielectric (IMD) layers and multi-layer interconnects (MLI) formed on the ILD layer, and a color filter formed in at least one of the IMD layers and overlying the image sensor.12-24-2009
20090315130Solid-state imaging apparatus and method for manufacturing the same - A solid-state imaging apparatus and method for manufacturing the imaging apparatus. A solid-state imaging apparatus with reduced thickness and/or mounting area by forming an aperture in a board and placing a solid-state semiconductor imaging chip, an image processing semiconductor chip, and/or a combination imaging/processing chip within the aperture.12-24-2009
20100148291ULTRAVIOLET LIGHT FILTER LAYER IN IMAGE SENSORS - An image sensor includes one or more ultraviolet (UV) light filter layers disposed between an insulating layer and a color filter array (CFA) layer. The one or more UV light filter layers reflect or absorb UV light while transmitting visible light.06-17-2010
20100148290CMOS IMAGE SENSORS AND RELATED DEVICES AND FABRICATION METHODS - An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.06-17-2010
20100148289BACK ILLUMINATED SENSOR WITH LOW CROSSTALK - A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.06-17-2010
20100155870LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the light guide has an air interface. The air interface improves the internal reflection of the light guide. Additionally, the light guide and an adjacent color filter are constructed with a process that optimizes the upper aperture of the light guide. These characteristics of the light guide eliminate the need for a microlens.06-24-2010
20100181636OPTICAL DEVICE, SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING OPTICAL DEVICE - An optical device includes the following structures. An optical element includes a light-receiving element at an upper surface of the optical element. A transparent member is disposed on the upper surface to cover the light-receiving element. A case includes a bottom wall, a side wall protruding from an outer edge of the bottom wall, and a through-hole penetrating the bottom wall. A sealant is filled in a space defined by surfaces of the optical element, the transparent member, and the case, and also in the through-hole. Here, the optical element and the transparent member are stored in a region between the bottom wall and the side wall. The sealant is filled to the region to seal the space. The bottom wall is segmented into: a center region in which the optical element is placed; and a peripheral region outside the center region. The through-hole is arranged in the peripheral region.07-22-2010
20100155867SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device (06-24-2010
20100187647High Density Photodiodes - The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.07-29-2010
20100258890UNIT PIXEL OF IMAGE SENSOR HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A unit pixel of an image sensor having a three-dimensional structure includes a first chip and a second chip which are stacked, one of the first chip and the second chip having a photodiode, and the other of the first chip and the second chip having a circuit for receiving information from the photodiode and outputting received information. The first chip includes a first pad which is projectedly disposed on an upper surface of the first chip in such a way as to define a concavo-convex structure, and the second chip includes a second pad which is depressedly disposed on an upper surface of the second chip in such a way as to define a concavo-convex structure corresponding to the concavo-convex structure of the first chip. The first chip and the second chip are mated with each other through bonding of the first pad and the second pad.10-14-2010
20100019337PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT - An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.01-28-2010
20080237765IMAGE SENSOR WITH THE ABILITY TO DETECT ALL COLORS AT EACH PIXEL - An image sensor with the ability to detect a different light wavelength at each pixel, due to a change of physical characteristics of material under light with different wavelength illumination.10-02-2008
20090079020SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.03-26-2009
20130214371SOLID-STATE IMAGING DEVICE, IMAGE SENSOR, METHOD OF MANUFACTURING IMAGE SENSOR, AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device including a pixel array unit in which a plurality of unit pixels each having a photoelectric converting unit to generate and store photocharges according to an amount of received light and a charge storage unit to store the photocharges are arranged on a semiconductor substrate. The charge storage unit is formed on a path along which light is incident on the photoelectric converting unit.08-22-2013
20130214372TRIAZINE RING-CONTAINING POLYMER AND MEMBRANE-FORMING COMPOSITION CONTAINING THE SAME - Disclosed is a triazine ring-containing hyperbranched polymer containing a repeating unit structure represented by the expression (1). By this means, it is possible to achieve a triazine ring-containing polymer which, alone, has high heat resistance, high transparency, high refractive index, high light resistance, high solubility, low volume shrinkage without adding metal oxides; and also a membrane-forming composition containing the same.08-22-2013
20120032290SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region.02-09-2012
20100187648PHOTOELECTIC CONVERSION DEVICE AND MANUFACTURING METHOD - A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.07-29-2010
20090302408SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of a semiconductor substrate, for generating charges by photoelectric conversion; a transfer region formed in the upper part of the semiconductor substrate and located on a side of the photoelectric conversion region, for transferring the charges; and a transfer electrode formed over the semiconductor substrate and located above the transfer region. The solid-state image sensor further includes: a first insulating film which covers the photoelectric conversion region and the transfer electrode; an antireflection film which covers the first insulating film; and a first light-shielding film which is formed on the antireflection film and covers at least the transfer electrode. The antireflection film and the first light-shielding film have an opening above the transfer electrode.12-10-2009
20100155869METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE AND SOLID-STATE IMAGE PICKUP DEVICE - A method includes preparing a cover member; preparing an image pickup element including a substrate including a pixel region including a plurality of photo detectors on a principal surface, a first concavo-convex portion including a plurality of first convex portions configured to concentrate light on the plurality of photo detectors, the first convex portions each having a lens shape, and a second concavo-convex portion surrounding the first concavo-convex portion, the second concavo-convex portion including a plurality of second convex portions; and fixing the cover member to a region of the image pickup element using a fixing member, the region being between the first concavo-convex portion and the second concavo-convex portion.06-24-2010
20100013039Backside-illuminated imaging sensor including backside passivation - The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside.01-21-2010
20100176475OPTICAL DEVICE AND METHOD FOR FABRICATING THE SAME - An optical device according to an aspect of the present invention includes: a semiconductor substrate layer including a plurality of elements; at least one optical component which is formed at the first principal surface side of the semiconductor substrate layer and transmits incident light of desired wavelength; and an interconnect layer formed on second principal surface of the semiconductor substrate layer. In the semiconductor substrate layer, (i) a photoelectric conversion element region is formed at a position corresponding to the at least one optical component, and (ii) at least one element among the plurality of elements is formed near the second principal surface. At least a part of the at least one optical component is formed as a part of the semiconductor substrate layer, and the interconnect layer includes the conductive material electrically connected to the photoelectric conversion element region and the at least one element.07-15-2010
20100176473IMAGING PHOTODETECTION DEVICE - An imaging photodetection device includes a plurality of photodetectors (07-15-2010
20100176476OPTICAL DEVICE, SOLID-STATE IMAGING DEVICE, AND METHOD - An optical device including: an optical element including a light-receiving unit as a part of a top surface; a transparent member deposited on the optical element to cover the light-receiving unit; and a sealant formed to seal around the transparent member. The transparent member includes: a first protrusion formed in an upper region of a side surface of the transparent member such that a step is created on the side surface; and a tapered surface on an end surface of the first protrusion, the tapered surface being sloped such that a to cross-sectional area of the transparent member decreases towards an upper side of the transparent member. The sealant covers entirely at least a part of the side surface of the transparent member, the part of the side surface being located below the first protrusion.07-15-2010
20100176474BACK-LIT IMAGE SENSOR AND METHOD OF MANUFACTURE - A backside-illuminated image sensor includes photoelectric converters disposed in a front-side of a substrate and arranged to define pixels, back-side interlayer dielectric patterns disposed on the back-side of the substrate over the photoelectric converters, color filters arranged over the back-side interlayer dielectric patterns, and micro-lenses arranged over the color filters, wherein adjacent back-side interlayer dielectric patterns are separated by an intervening gap region having a refractive index less than that of the back-side interlayer dielectric patterns.07-15-2010
20100224946SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.09-09-2010
20100276773PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD OF PHOTOELECTRIC CONVERSION ELEMENT - An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.11-04-2010
20100237452SEMICONDUCTOR DEVICE AND BACKSIDE ILLUMINATION SOLID-STATE IMAGING DEVICE - A semiconductor substrate has a first principal face and a second principal face opposite thereto. A pixel unit, an analog circuit and a digital circuit are formed in a first, second and third region of the semiconductor substrate. An interconnect is formed on each of the first and second principal faces of the second region. A plurality of penetrative electrodes is formed in the semiconductor substrate to penetrate the first and second principal faces. These penetrative electrodes are electrically connected with interconnects formed in the first and second principal faces of the second region. A guard ring is formed in the semiconductor substrate to penetrate the first and second principal faces, the guard ring is surrounding the penetrative electrodes.09-23-2010
20100237451SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the semiconductor substrate into a plurality of regions, and an insulating member illustratively made of BSG is buried immediately above the p-type region. PD regions are isolated from each other by the p-type region and the insulating member. Moreover, a high-concentration region is formed in a lower portion of the PD region, and an upper portion is served as a low-concentration region.09-23-2010
20100237453OPTOELECTRONIC DEVICE - The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.09-23-2010
20120126355METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.05-24-2012
20100224947STACKED PIXEL FOR HIGH RESOLUTION CMOS IMAGE SENSOR - Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storage region formed in a first region under a surface portion of a substrate and collecting photo-generated carriers; a second charge storage region formed adjacent to the surface portion of the substrate and separated from the standard photo-sensing and charge storage region; and a potential barrier formed between the first region and a second region underneath the first region and diverting the photo-generated carriers from the second region to the second charge storage region.09-09-2010
20120193740OPTICAL SEMICONDUCTOR DEVICE - The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.08-02-2012
20100207225Solid-state imaging device, electronic apparatus, and method for manufacturing the same - A solid-state imaging device includes: photoelectric conversion elements disposed on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge; electrodes interposed between the photoelectric conversion elements; and light blocking portions provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions in the light blocking portions are arranged at second and third pitches, respectively, on the imaging surface. At least the third pitch increases with distance from the center toward the periphery of the imaging surface.08-19-2010
20100207224SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.08-19-2010
20080283950Image Sensor and Method of Manufacturing the Same - An image sensor and method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, a metal interconnection layer, a light-receiving unit, a lens-type upper electrode, and a color filter. The semiconductor substrate can include a circuit region. The metal interconnection layer can include a metal interconnection and an interlayer dielectric. The light-receiving unit can be a photodiode disposed on the metal interconnection layer. The lens-type upper electrode can be disposed on the light-receiving unit and formed in a convex lens shape. The color filter can be disposed on the lens-type upper electrode.11-20-2008
20110108939METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR - A method for manufacturing a back-side illuminated image sensor, including the steps of: forming, inside and on top of an SOI-type silicon layer, components for trapping and transferring photogenerated carriers and isolation regions; forming a stack of interconnection levels on the silicon layer and attaching, on the interconnect stack, a semiconductor handle; removing the semiconductor support; forming, in the insulating layer and the silicon layer, trenches reaching the isolation regions; depositing a doped amorphous silicon layer, more heavily doped than the silicon layer, at least on the walls and the bottom of the trenches and having the amorphous silicon layer crystallize; and filling the trenches with a reflective material.05-12-2011
20090020840SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.01-22-2009
20100164029GRADED ORDER-SORTING FILTER FOR HYPERSPECTRAL IMAGERS AND METHODS OF MAKING THE SAME - A graded order-sorting filter for hyperspectral imagers and methods of making the same are provided. The graded order-sorting filter includes a substrate wafer having a first side and a second side and is formed of a material that is substantially transparent to light photons. The graded order-sorting filter also includes an absorption filter deposited outwardly from the first side of the substrate wafer. The absorption filter is tapered along a taper direction and formed of a graded composition semiconductor material with a bandgap graded to decrease outwardly from the substrate wafer and/or graded along the taper direction. The graded composition semiconductor material is substantially transparent to the light photons for photon energies substantially less than the bandgap. The above filter can also be aligned to a two-dimensional array of pixels to form a hyperspectral imager.07-01-2010
20090020839SEMICONDUCTOR LIGHT RECEIVING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light receiving device includes a light receiving section made of a semiconductor provided on a substrate, an electrode provided on the substrate and configured to apply an electric field to the light receiving section, a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer, and a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode. At least a portion of the resin layer located in the gap has a light blocking property.01-22-2009
20090020838APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS - An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.01-22-2009
20090243011Manufacturing Optical MEMS with Thin-Film Anti-Reflective Layers - In accordance with the teachings of one embodiment of the present disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.10-01-2009
20110057280COLOR IMAGING DEVICE AND COLOR IMAGING DEVICE FABRICATING METHOD - In a color imaging device in which a color filter layer is formed respectively for a plurality of photoelectric conversion elements arranged on a substrate, the color filter layer comprises an underlying layer of a transparent resin and a pigment layer. The pigment layer is heat fused on the underlying layer. A heat treatment temperature for heat fusing is at or above a glass transition temperature of the transparent resin constituting the underlying layer.03-10-2011
20110057279ANTI-REFLECTIVE IMAGE SENSOR - An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third color sensing pixels; a second layer disposed directly on the first layer overlying the first, second and third color sensing pixels; and a third layer disposed directly on portions of the second layer overlying at least one of the first or second color sensing pixels, wherein the first layer has a first refractive index, the second layer has a second refractive index greater than the first refractive index, and the third layer has a third refractive index greater than the second refractive index.03-10-2011
20110057277Image sensor structure and fabricating method therefor - An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.03-10-2011
20100127341Imaging Device Manufacturing Method, Imaging Device and Portable Terminal - Provided are a method for manufacturing a low cost imaging device, the low cost imaging device manufactured by such method and a portable terminal using the imaging device. A silicon wafer 05-27-2010
20110175185SOLID STATE BACK-ILLUMINATED PHOTON SENSOR - A backside-illuminated image sensor is disclosed having improved quantum efficiency (QE) in the near infrared wavelengths (NIR: 750-1100 nm) with minimal optical interference fringes produced by multiple reflected rays within the photosensitive Si region of the sensor, which may be a charge-coupled device, a complementary metal oxide sensor or an electron-multiplication sensor. The invention comprises a fringe suppression layer applied to the backside surface of the photosensitive Si region of a detector (Si substrate) whereby the fringe suppression layer functions in concert with the Si substrate to reduce the occurrence of interference fringes in the NIR while maintaining a high QE over a broad range of wavelengths (300-1100 nm). The combination of a fringe suppression layer applied to a Si substrate provides a new class of back illuminated solid state detectors for imaging.07-21-2011
20100193892CMOS IMAGE SENSOR - Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.08-05-2010
20090166783SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND CAMERA AND ELECTRONIC APPARATUS USING THE SAME - A method of manufacturing a solid-state imaging device is provided. The method includes: forming an insulating layer extending over an effective pixel region where a plurality of pixels each having a photoelectric conversion element is arranged and a peripheral area adjacent to the effective pixel region; forming an opening in the insulating layer located immediately above the photoelectric conversion element on the effective pixel region; forming a dummy opening in the insulating layer on the peripheral region; and forming a buried layer on the insulating layer to fill the opening and the dummy opening formed in the insulating layer.07-02-2009
20090200624Circuit and photo sensor overlap for backside illumination image sensor - A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.08-13-2009
20090039452EMBEDDED BONDING PAD FOR IMAGE SENSORS - A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.02-12-2009
20090115013Image Sensor and Method for Manufacturing the Same - Disclosed is a method for manufacturing an image sensor capable of inhibiting bridge formation between microlenses and minimizing gaps between microlenses. A photodiode and circuitry can be formed on a substrate according to unit pixel. A color filter layer can be formed on the substrate with color filters corresponding to each photodiode. A planarization layer can be formed on the color filter layer, and a groove can be formed in the planarization layer at a boundary between pixels. In one embodiment, the groove can be formed by performing an ashing process with respect to a general photoresist pattern. In another embodiment, the groove can be formed by performing an ashing process with respect to the photoresist pattern for forming the microlens. A microlens can be formed on the planarization layer such that a region of the microlens fills the groove.05-07-2009
20090115011Solid-state imaging device and production method thereof - A solid-state imaging device includes a plurality of photodiode regions arranged in an array, a non-transparent border region existing around each photodiode region, and a microlens array including a plurality of microlenses arranged in an array corresponding to the plurality of photodiode regions; wherein each microlens functions to converge incident light advancing straight toward the non-transparent border region around the corresponding photodiode region into that photodiode region, and the microlens array is formed using a transparent diamond-like carbon (DLC) film, the DLC film including a region where its refractive index is modulated corresponding to each microlens, and a light-converging effect being caused when light flux passes through the region where the refractive index was modulated.05-07-2009
20100219496WAFER ARRANGEMENT AND A METHOD FOR MANUFACTURING THE WAFER ARRANGEMENT - The wafer arrangement (09-02-2010
20080277751Method of fabricating CMOS image sensor - A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The method includes forming a plurality of photodiodes on a semiconductor substrate; forming an insulating interlayer on the semiconductor substrate including the photodiodes; forming a protective layer on the insulating interlayer; forming a plurality of color filters corresponding to the photodiodes; forming a top coating layer on the color filters; forming a microlens pattern on the top coating layer; and forming a plurality of microlenses by reflowing the microlens pattern.11-13-2008
20080272449Solid-state image pickup device, solid-state image pickup device manufacturing method and camera - A solid-state image pickup device 11-06-2008
20090108388SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a semiconductor substrate including a light receiving element, a silicon oxide film formed on the semiconductor substrate, a plurality of wiring interlayer films formed on the silicon oxide film, and each including a wiring layer formed as the result of the fact that copper is buried, and a silicon nitride film formed on the wiring interlayer film of the uppermost layer wherein Si—H concentration is smaller than N—H concentration.04-30-2009
20090108387Semiconductor Device And Method For Strain Controlled Optical Absorption - A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.04-30-2009
20090108385METHOD AND APPARATUS FOR IMPROVING CROSSTALK AND SENSITIVITY IN AN IMAGER - A pixel sensor cell includes a substrate of a first conductivity type, and a photoconversion region. The photoconversion region includes a pinning layer of the first conductivity type for receiving incident light of multiple colors, and a diode implant layer of a second conductivity type, disposed below the pinning layer, for accumulating photo-generated charge. Also included is a deep well of the first conductivity type, disposed below the diode implant layer, for rejecting at least one color of the incident light. The deep well includes a doped region, vertically disposed at a predetermined depth below the diode implant layer. The diode implant layer is effective in accumulating photo-generated charge of a blue color, and the deep well is effective in rejecting photo-generated charges of green and red colors from the diode implant layer. By placing the deep well at another predetermined depth below the diode implant layer, the deep well is effective in rejecting photo-generated charge of a red color from the diode implant layer.04-30-2009
20090108384Optoelectronic Device with Germanium Photodetector - An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.04-30-2009
20100295141TWO COLOUR PHOTON DETECTOR - A two-color radiation detector includes a mesa-type multi-layered mercury-cadmium-telluride detector structure monolithically integrated on a substrate. The detector is responsive to two discrete wavelength ranges separated by a wavelength range to which the detector is not responsive. The detector further includes two contact points deposited on the layer disposed furthest away from the entry point of the radiation, the contact points being isolated with respect to each other by a trench disposed within the layer.11-25-2010
20100308428SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND OPTICAL COMMUNICATION DEVICE - A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.12-09-2010
20100301437Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems - A sensor for capturing light at the ultraviolet (UV) or the deep UV wavelength includes a multi-layer anti-reflective coating (ARC). In a two-layer ARC, the first layer is formed on either the substrate or the circuitry layer, and the second layer is formed on the first layer and receives the light as an incident light beam. Notably, the first layer is at least twice as thick as the second layer, thereby minimizing an electrical field at a substrate surface due to charge trapping in the ARC. In a four-layer ARC, the third layer is formed on the second layer and the fourth layer is formed on the third layer. The first and third layers may be formed from the same material, and the second and fourth layers may be formed from materials having same/similar indexes of refraction. In this case, the first layer is at least twice as thick as any of the second, third, or fourth layers.12-02-2010
20100301439Solid-state imaging device and method of manufacturing solid-state imaging device - A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.12-02-2010
20100301438SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.12-02-2010
20130134538SOLID-STATE IMAGING DEVICE - According to an embodiment, an image sensor is provided for photoelectrically converting blue light, green light and red light for each pixel. A photoelectric conversion layer for red light is provided having a light absorption coefficient that is different than the light absorption coefficient of the photoelectric conversion layers for blue light and green light.05-30-2013
20090152658METHODS OF PACKAGING IMAGER DEVICES AND OPTICS MODULES, AND RESULTING ASSEMBLIES - A method of packaging imager devices and optics modules is disclosed which includes positioning an imager device and an optics module in each of a plurality of openings in a carrier body, introducing an encapsulant material into each of the openings in the carrier body and cutting the carrier body to singulate the plurality of imager devices and optics modules into individual units, each of which comprise an imager device and an optics module. A device is also disclosed which includes an imager device comprising a plurality of photosensitive elements and an optics module coupled to the imager device, the optics module comprising at least one lens that, when the optics module is coupled to the imager device, is positioned a fixed, non-adjustable distance from the plurality of photosensitive elements.06-18-2009
20100320552CMOS Image Sensor - The present invention discloses a CMOS image sensor comprising: a substrate; a photo diode formed in the substrate; an interconnection formed on the substrate, wherein the portions of the interconnection are insulated from one another by a dielectric material; a light passage penetrating through at least part of the dielectric material; a micro lens above the light passage; and a color filter above the micro lens.12-23-2010
20110127628ION IMPLANTATION TO CHANGE THE OPTICAL PROPERTIES OF THE PASSIVATION FILMS IN CMOS IMAGER DEVICES - Imager sensor pixels, image sensor and methods for forming image sensors. An image sensor pixel includes a photosensor, a microlens that receives incident light, at least one fabrication layer between the photosensor and the microlens and a passivation layer between the microlens and the at least one fabrication layer. The passivation layer includes a plurality of impurities and passes the incident light from the microlens to the photosensor without substantially redirecting the incident light.06-02-2011
20110127629SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid state imaging device including a semiconductor layer, an insulating material in an opening penetrating a surface of the semiconductor layer, and a protective film that is resistant to etching covering one end of the insulating material on an interior side of the semiconductor layer.06-02-2011
20110001206IMAGE SENSOR DEVICE AND METHOD FOR MAKING SAME - The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device comprises an optical pixel and an electronic circuit, wherein the optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.01-06-2011
20110024859PHOTOELECTRIC CONVERSION DEVICE, FABRICATION METHOD FOR THE SAME, AND SOLID STATE IMAGING DEVICE - A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.02-03-2011
20110024857SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME - Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.02-03-2011
20100133634PRODUCTION OF A SELF-ALIGNED CUSIN BARRIER - A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.06-03-2010
20100133633BEAM STEERING ELEMENT WITH BUILT-IN DETECTOR AND SYSTEM FOR USE THEREOF - An all-optical cross-connect switching system provides optical switching that may reduce processing requirements by three orders of magnitude over conventional techniques by associating at least one optical detector with an optical beam steering element. In one embodiment, a first beam steering element, having a reflective surface in optical association with a first optical fiber array, and a second beam steering element, having a reflective surface in optical association with a second optical fiber array, are optically arranged to direct an optical beam from a first optical fiber in the first optical fiber array to a second optical fiber in the second optical fiber array. The optical detector provides information about a first position of the optical beam on the second beam steering element. Based on this information, the angle of the first beam steering element may be adjusted to cause the optical beam to change to a second position on the second beam steering element.06-03-2010
20110018080METHOD FOR MANUFACTURING SOLID STATE IMAGE FORMING DEVICE, AND SOLID STATE IMAGE FORMING DEVICE - A method for manufacturing a solid state image forming device according to an embodiment includes forming a transparent resin layer 01-27-2011
20110018082ELECTRONIC ASSEMBLY FOR IMAGE SENSOR DEVICE - An electronic assembly for an image sensor device is disclosed. The electronic assembly comprises a package module and a lens set mounted thereon. The package module comprises a device substrate comprising at least one grounding plug therein, in which the grounding plug is insulated from the device substrate and an array of optoelectronic devices therein. A transparent substrate comprises a dam portion attached to the device substrate to form a cavity between the device and transparent substrates. A micro-lens array is disposed within the cavity. A conductive layer is electrically connected to the grounding plug and covers the sidewalls of the lens set and the package module and the upper surface of the lens set. A method for fabricating the electronic assembly is also disclosed.01-27-2011
20110108938IMAGE SENSOR HAVING WAVEGUIDES FORMED IN COLOR FILTERS - An image sensor having an array of pixels disposed in a substrate. Each pixel includes a photosensitive element, a color filter, and waveguide walls. The waveguide walls are disposed in the color filter and surround portions of the color filter to form waveguides through the color filter. The refractive index of the waveguide walls is less than the refractive index of the color filter. The image sensor may be back side illuminated (BSI) or front side illuminated (FSI). In some embodiments, metal walls may be coupled to the waveguide walls.05-12-2011
20110024856COLUMNATED BACKSIDE ILLUMINATION METHOD AND STRUCTURE - Imager devices, systems including the imager devices and methods of forming the imager devices are provided. The imager device has a substrate with first and second opposing sides. The imager also includes an array of imager pixels at the first side of the substrate, each including a photoconversion device. An antireflective material is on the second side of the substrate and a dielectric material is over the antireflective material. A light guide material is disposed within a plurality of openings in the dielectric material and optically aligned with a respective photoconversion device.02-03-2011
20110024858SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME - A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.02-03-2011
20110042767FILTERS IN AN IMAGE SENSOR - A method of forming an image sensor having a sensor, a cover, and a filter, that may include applying a filter layer to a cover layer by masking the cover layer with a predetermined pattern and applying the filter layer by a deposition process. The method may also include bonding the cover layer to a sensor layer including a plurality of sensors. The predetermined pattern may result in a filter layer which is aligned with each sensor. There may be gaps in the filter layer around each sensor.02-24-2011
20110042766PHOTODETECTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND LIGHT EMITTING DEVICE - One embodiment of the present invention includes a first light-blocking layer and a second light-blocking layer which are over a light-transmitting substrate, a first photodiode over the first light-blocking layer, a second photodiode over the second light-blocking layer, a first color filter covering the first photodiode, a second color filter covering the second photodiode, and a third light-blocking layer formed using the first color filter and the second color filter and disposed between the first photodiode and the second photodiode.02-24-2011
20110042770WAFER LEVEL PROCESSING FOR BACKSIDE ILLUMINATED IMAGE SENSORS - A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.02-24-2011
20110042769ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS - The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.02-24-2011
20110115042STRUCTURE FOR DECREASING MINIMUM FEATURE SIZE IN AN INTEGRATED CIRCUIT - A structure for decreasing minimum feature size in an integrated circuit design that includes a substrate comprising a first material is provided. The structure comprises a layer of second material formed on a surface of the substrate and a micro-aperture formed in the layer of second material. The micro-aperture has sidewalls formed to be substantially perpendicular to the surface of the substrate and a horizontal tip formed on the surface of the substrate and extending orthogonally from a portion of the sidewalls.05-19-2011
20110115041NANOWIRE CORE-SHELL LIGHT PIPES - Embodiments relate to methods and devices comprising an optical pipe comprising a core and a cladding. An embodiment includes obtaining a substrate comprising a photodiode and a first protective layer, the first protective layer having a predetermined thickness and growing a nanowire having a length L on the photodiode, wherein the length L is greater than the predetermined thickness of the protective layer. Another embodiment includes (1) obtaining a substrate comprising a photodiode and a protective layer, (2) fabricating a nanowire light pipe on the photodiode, the light pipe comprising a nanowire core and a cladding; and (3) coating the substrate and the nanowire light pipe with a protective coating.05-19-2011
20090050993PHOTOELECTRIC CONVERSION DEVICE AND MULTI-CHIP IMAGE SENSOR - A pixel space is narrowed without increasing PN junction capacitance. A photoelectric conversion device includes a plurality of pixels arranged therein, each including a first impurity region of a first conductivity type forming a photoelectric conversion region, a second impurity region of a second conductivity type forming a signal acquisition region arranged in the first impurity region, a third impurity region of the first conductivity type and a fourth impurity region of the first conductivity type are arranged in a periphery of each pixel for isolating the each pixel, the fourth impurity region is disposed between adjacent pixels, and an impurity concentration of the fourth impurity region is smaller than an impurity concentration of the third impurity region.02-26-2009
20090032893Image sensor package and fabrication method thereof - An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via hole therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via hole for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.02-05-2009
20090032894Flip-Chip Photodiode - A photodiode is provided according to various embodiments. In some embodiments, the photodiode includes a substrate and an active region. The active region is configured to receive light through the substrate. In such a configuration, the substrate not only participates in the photodiode operation acts as a light filter depending on the substrate material. In some embodiments, the active region may include solder balls that may be used to couple the photodiode to a printed circuit board. In some embodiments, the active region is coupled face-to-face with the printed circuit board.02-05-2009
20100164039IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a photodiode arranged over a semiconductor substrate, a core layer for an optical waveguide, to allow incident light to move toward the photodiode, the core layer being arranged over the photodiode, a clad layer for the optical waveguide, having a lower refractive index than the core layer to reflect the incident light to the photodiode, the clad layer being arranged over the side core layer, and a dielectric layer arranged over a side of the clad layer. An optical waveguide having a uniform refractive index and a flat light-reflection surface can be formed using semiconductor materials such as InP, InGaAsP, SiO2, SiON and PMMA. Furthermore, the optical waveguide can control a refractive index and thus reduce light loss, and a buffer layer can be simply formed by using a polymer.07-01-2010
20100164038IMAGE SENSOR - Embodiments relate to an image sensor and a method of manufacturing the image sensor. An image sensor according to the embodiment includes: silicon patterns that are formed on a flexible substrate; a device isolation pattern that is formed between the silicon patterns; a circuit layer that is formed on the silicon patterns and has a first isolation pattern directly connected with the device isolation pattern; and a wiring layer that is formed on the circuit layer and includes a second isolation pattern corresponding to the first isolation pattern, and a wiring electrically connected with the circuit layer. The embodiments provide a flexible image sensor that can be applied to a variety of products and a method of manufacturing the flexible image sensor.07-01-2010
20100164034IMAGE SENSOR AND FABRICATION METHOD THEREOF - An image sensor and a method of fabricating an image sensor. A method of fabricating an image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate, a filter array including color filters arranged corresponding to upper parts of photodiodes, a plurality of hydrophilic lenses arranged over a filter array spaced apart from one another, and/or a plurality of hydrophobic lenses arranged over a filter array between hydrophilic lenses. A curvature of a lens may be substantially equal in a horizontal, vertical and/or diagonal direction.07-01-2010
20100164037METHOD FOR MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming a circuit area including a circuitry on and/or over a semiconductor substrate having a pixel area and/or a peripheral area, provided with a photodiode. A method may include forming a metal interconnection layer, which may include a metal interconnection on and/or over a interlayer dielectric layer, on and/or over a circuit area, forming a trench over a metal interconnection layer of a pixel area, performing a cleaning process on and/or over a the metal interconnection layer including a trench, and/or forming a micro-lens on and/or over a bottom surface of a trench of a metal interconnection layer.07-01-2010
20100164036BACK SIDE ILLUMINATION IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the pixel area; an interlayer dielectric layer and a metal line on the front side of the first substrate; a second substrate bonded to the front side of the first substrate formed with the metal line; a pixel division ion implantation layer on the isolation region at a back side of the first substrate; and a micro-lens on the photo detector at the back side of the first substrate.07-01-2010
20100164035BACK SIDE ILLUMINATON IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A back side illumination image sensor according to an embodiment includes: a device isolation region and a pixel region that are on a front side of a first substrate; a light sensor and a readout circuit that are on the pixel region; an interlayer dielectric layer and a metal line that are on the front side of the first substrate; a second substrate that is bonded to the front side of the first substrate on which the metal line is formed; a pixel isolating dielectric layer that is on the device isolation region at a back side of the first substrate; and a microlens that is on the light sensor at the back side of the first substrate07-01-2010
20100164031IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor and a manufacturing method thereof are provided. The image sensor according to an embodiment includes: a semiconductor substrate where a light receiving device is formed for each pixel; a dielectric layer formed on the semiconductor substrate; and a metal layer formed in the dielectric layer and including metal wires and light shielding patterns formed on an interface between pixels. In the image sensor according to the embodiment, since the light shielding pattern is formed by using a dummy pattern of the metal wire, the light shielding pattern may be formed close to the semiconductor substrate to minimize generation of optical leakage current, thereby improving reliability of the device.07-01-2010
20100164033IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method of manufacturing an image sensor. An image sensor may include a semiconductor substrate which may include a readout circuitry. An image sensor may include an interlayer dielectric over a semiconductor substrate, and/or a first metal pattern over an interlayer dielectric. An interconnection may penetrate an interlayer dielectric and/or may be connected to a readout circuitry. A first metal pattern may be formed over an interlayer dielectric, and/or may be connected to an interconnection. A second metal pattern may be formed over a first metal pattern. A photodiode pattern may be formed over a second metal pattern.07-01-2010
20100164032SEMICONDUCTOR OPTICAL SENSOR ELEMENT AND METHOD OF PRODUCING THE SAME - A method of producing a semiconductor optical sensor element includes the steps of: forming an oxide film on a silicon carbide substrate; forming a gate electrode layer on the oxide film; patterning the gate electrode layer to form a gate electrode; and processing thermally the gate electrode layer or the gate electrode under an oxidation environment. Further, the gate electrode layer or the gate electrode is thermally processed under the oxidation environment at a temperature between 750° C. and 900° C.07-01-2010
20100164030CHIP CARRIER BEARING LARGE SILICON FOR HIGH PERFORMANCE COMPUTING AND RELATED METHOD - Embodiments of the present invention provide a system and method for manufacturing integrated circuit (IC) chip packages. In one embodiment, the integrated circuit (IC) chip package can include an IC chip and a substrate coupled to the IC chip. The substrate can include a glass fiber re-enforced epoxy core, a plurality copper circuitry containing particle re-enforced epoxy layers symmetrically-oriented to each surface of the glass fiber re-enforced epoxy core, and an outermost amorphous glass layer on each surface of the plurality of layers. The IC chip can be coupled to copper circuitry bonded to one of the outermost amorphous glass layers.07-01-2010
20090321861MICROELECTRONIC IMAGERS WITH STACKED LENS ASSEMBLIES AND PROCESSES FOR WAFER-LEVEL PACKAGING OF MICROELECTRONIC IMAGERS - Microelectronic imagers including stacked lens assemblies and process for wafer-level packaging of microelectronic imagers. One embodiment of a method for manufacturing stacked lens assemblies for integrated imagers comprises attaching a first lens substrate to a base spacer, fixing an intermediate spacer to the first lens substrate, and mounting a second lens substrate to the intermediate spacer. In a specific embodiment, the first lens substrate can be a component of a first lens unit and the second lens substrate can be a component of a second lens unit. Additionally, the first and second lens substrates can have one or more lens elements, aperture layers and/or filters on the substrates as described above or in other combinations.12-31-2009
20110084350SOLID STATE IMAGE CAPTURE DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a solid state image capture device includes a multilayered interconnect layer, a semiconductor substrate, a pillar diffusion layer and an insulating member. The multilayered interconnect layer includes an interconnect. The semiconductor substrate is provided on the multilayered interconnect layer and the semiconductor substrate has a through-trench. The pillar diffusion layer is formed in the semiconductor substrate around the through-trench. In addition, an insulating member is filled into the through-trench.04-14-2011
20090085137SOLID-STATE IMAGING DEVICE - In a solid-state imaging device of the present invention, light-sensitive elements 04-02-2009
20110241145BACKSIDE ILLUMINATION IMAGE SENSORS WITH REFLECTIVE LIGHT GUIDES - Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.10-06-2011
20100219495Photosensitizing chip package & manufacturing method thereof - A photosensitizing chip package construction and manufacturing method thereof is comprised of photosensitizing chips constructed on one side of a wafer using a bonding layer; a color attachment array being disposed over those photosensitizing chips; a glass substrate provided with weir and covered up over the color attachment array; a proper gap being defined between the glass substrate and the color attachment array to promote permeability of stream of light by direct receiving stream of light from those photosensitizing chips constructed over the wafer.09-02-2010
20110241146MANUFACTURING METHOD AND STRUCTURE OF A WAFER LEVEL IMAGE SENSOR MODULE WITH PACKAGE STRUCTURE - The present invention discloses a manufacturing method and structure of a wafer level image sensor module with package structure. The structure of the wafer level image sensor module with package structure includes a semi-finished product, a plurality of solder balls, and an encapsulant. The semi-finished product includes an image sensing chip and a wafer level lens assembly. The encapsulant is disposed on lateral sides of the image sensing chip and the wafer level lens assembly. Also, the manufacturing method includes the steps of: providing a silicon wafer, dicing the silicon wafer, providing a lens assembly wafer, fabricating a plurality of semi-finished products, performing a packaging process, mounting the solder balls, and cutting the encapsulant. Accordingly, the encapsulant encapsulates each of the semi-finished products by being disposed on the lateral sides thereof.10-06-2011
20090224348SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD - A solid-state imaging device includes a semiconductor substrate having a photoelectric conversion region, a first microlens provided above the semiconductor substrate, covering the photoelectric conversion region, and having a convex upper surface, for gathering external light into the photoelectric conversion region, and a second microlens provided above the first microlens and having a convex upper surface, for gathering external light into the first microlens. A flat surface is provided at a top portion of one of the first and second microlenses and immediately above the photoelectric conversion region.09-10-2009
20090212380METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device is provided.08-27-2009
20090321865SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device having a color filter with high color reproducibility even in the case of using lighting of low color temperatures. The solid-state imaging device has a plurality of pixels arranged two-dimensionally, and comprises a color separation filter which allows transmission of light of a predetermined wavelength in incident light for each of the plurality of pixels, wherein the color separation filter includes: a visible-light and near-infrared filter having transmission bands in regions of a visible lo wavelength band and a near-infrared wavelength band; and a near-infrared normalization filter laminated with the visible-light and near-infrared filter, wherein the near-infrared normalization filter is substantially transparent in the visible wavelength band and a first near-infrared wavelength band, and is substantially not transparent in a second near-infrared wavelength band between the visible wavelength band and the first near-infrared wavelength band.12-31-2009
20090321862IMAGE SENSOR AND FABRICATING METHOD THEREOF - A method for fabricating an image sensor, which includes the following steps, is provided. A semiconductor substrate including a sensor array, a pad and a passivation layer is provided, and the passivation layer covers the sensor array and the pad. An opening, which comprises tapered sidewalls not perpendicular to a bared surface of the pad, is formed in the semiconductor substrate to expose the pad. An under layer is formed on the semiconductor substrate, and covers the pad and the passivation layer. A color filter array is formed on the under layer and over the corresponding sensor array. A planar layer is formed on the color filter array. A portion of the under layer is removed to expose the pad. A plurality of U-lenses is formed on the planar layer.12-31-2009
20100013040PHOTODIODE - A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.01-21-2010
20100038736SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE - A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.02-18-2010
20120068291IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.03-22-2012
20110175183INTEGRATED PLASMONIC LENS PHOTODETECTOR - Metal-semiconductor-metal (MSM) photodetectors may see increased responsivity when a plasmonic lens is integrated with the photodetector. The increased responsivity of the photodetector may be a result of effectively ‘guiding’ photons into the active area of the device in the form of a surface plasmon polariton. In one embodiment, the plasmonic lens may not substantially decrease the speed of the MSM photodetector. In another embodiment, the Shottkey contacts of the MSM photodetector may be corrugated to provide integrated plasmonic lens. For example, one or more of the cathodes and anodes can be modified to create a plurality of corrugations. These corrugations may be configured as a plasmonic lens on the surface of a photodetector. The corrugations may be configured as parallel linear corrugations, equally spaced curved corrugations, curved parallel corrugations, approximately equally spaced concentric circular corrugations, chirped corrugations or the like.07-21-2011
20120199929NEAR INFRARED CUTOFF FILTER - To provide a near infrared cutoff filter at low costs, which is useful as cover glass for a solid state imaging sensor package, by providing a thin film attenuation layer for effectively shielding α rays emitted from substrate glass in a form not to influence the optical characteristics. A near infrared cutoff filter comprising substrate glass made of fluorophosphate glass containing CuO or phosphate glass containing CuO, and a thin film attenuation layer formed on at least one light-permeable surface of the substrate glass to attenuate α rays emitted from the substrate glass.08-09-2012
20120199927SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MAKING THE SAME - A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.08-09-2012
20120199926BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS - A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.08-09-2012
20120199925BSI IMAGE SENSOR PACKAGE WITH EMBEDDED ABSORBER FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS - A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.08-09-2012
20120199924BSI IMAGE SENSOR PACKAGE WITH VARIABLE LIGHT TRANSMISSION FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS - A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a semiconductor region adjacent a rear face. The semiconductor region has a first region of material overlying the first light sensing element and a second region of material overlying the second light sensing element such that the first and second wavelengths are able to pass through the first and second regions, respectively, and reach the first and second light sensing elements with substantially the same intensity.08-09-2012
20120241893DEVICES INCLUDING BOND PAD HAVING PROTECTIVE SIDEWALL SEAL - A device having a detector includes a sensor package. The sensor package includes a light sensor, at least one filter located over the light sensor and at least one bond pad. The light sensor is formed on a semiconductor device that provides sensor information related to light incident upon the light sensor. A perimeter of each bond pad is covered by a protective layer forming a sidewall seal. The sensor package also includes a package that encases the light sensor, filter(s) and bond pad(s). Additionally, at least one package pin is communicatively coupled to the bond pad(s). The device also includes a functional circuit that is coupled to the sensor package and receives the sensor information from the light sensor. The device can be an ambient light sensor, camera, backlit mirror, handheld electronic device, filter device, light-to-digital output sensor, gain selection device, proximity sensor, or light-to-voltage non-linear converter.09-27-2012
20120241890IR SENSOR USING REO UP-CONVERSION - A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.09-27-2012
20110175182Optical Seneor Package Structure And Manufactueing Method Thereof - An optical sensor package structure includes a substrate, a metal plate, an optical sensing chip, a plurality of bonding wires and a lens module. The substrate includes a top surface, a bottom surface and a hole penetrating the top surface and the bottom surface. The metal plate covers the hole from the bottom surface of the substrate. The optical sensing chip is received in the hole and mounted on the metal plate. The bonding wires interconnect the optical sensing chip and the top surface of substrate. The lens module is covering on the hole and mounting on the top surface of the substrate to enclose the optical sensing chip and the bonding wires. Because the optical sensing chip is received in the hole of the substrate, the height of the optical sensor package structure can be reduced to adapt to a compact size electrical device.07-21-2011
20110175184SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE - The invention provides a solid-state imaging device and a method of manufacturing a solid-state imaging device capable of reducing a variation in the shape of an in-layer lens and deeply forming a lens portion. Disclosed is a method of manufacturing a solid-state imaging device including a photoelectric conversion unit and a light shielding film. The method includes: forming the light shielding film; forming a first insulating film and performing a reflow process on the first insulating film; etching the first insulating film such that the first insulating film remains only in a side portion of the light shielding film; forming a second insulating film; and forming another insulating film. A lens portion is formed on another insulating film so as to protrude toward the photoelectric conversion unit, and the lens portion has a shape corresponding to the surface shape of the second insulating film.07-21-2011
20110073975SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, AND MANUFACTURING METHODS THEREOF - According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on the first surface of the semiconductor substrate; a light-transmissive protective member disposed above the light-receiving part of the semiconductor substrate with a predetermined gap and adhered via the adhesive layer; and plural external connection terminals arranged in a predetermined array on the second surface of the semiconductor substrate are included. Each center point of the external connection terminals forming two facing edges is positioned inside of an area of the adhesive layer projected on the second surface among the outermost external connection terminals.03-31-2011
20110101480COMPACT CAMERA MODULE AND METHOD FOR FABRICATING THE SAME - A compact camera module (CCM) includes an image sensor, a lens unit and a specific filter glass unit. The image sensor is used for sensing an image. The lens unit is used for guiding light beams toward the image sensor. The specific filter glass unit is implemented external to the lens unit and has the image sensor and the lens unit disposed on opposite sides of the specific filter glass unit, for filtering out a specific light of the light beams.05-05-2011
20110101483TWO COLOUR PHOTON DETECTOR - A two-colour radiation detector (05-05-2011
20110101481Photodetector Array Having Array of Discrete Electron Repulsive Elements - Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a substrate, and a material coupled between the surface and the plurality of photosensitive regions. The material may receive the light. At least some of the light may free electrons in the material. The apparatus may also include a plurality of discrete electron repulsive elements. The discrete electron repulsive elements may be coupled between the surface and the material. Each of the discrete electron repulsive elements may correspond to a different photosensitive region. Each of the discrete electron repulsive elements may repel electrons in the material toward a corresponding photosensitive region. Other apparatus are also disclosed, as are methods of use, methods of fabrication, and systems incorporating such apparatus.05-05-2011
20110073977AMINO ACID GENERATOR AND POLYSILOXANE COMPOSITION CONTAINING THE SAME - There is provided an amino acid generator comprising a protecting group for an amino group that is eliminated to generate an amino acid, and a coating film forming composition using the amino acid generator and a polysiloxane composition containing the amino acid generator. A coating film forming composition comprising: a component (A): an amino acid generator comprising a protecting group that is eliminated to generate an amino acid, which is a compound of Formula (1): D-A (1) where D is a protecting group for an amino group, and A is an organic group remaining after subtracting hydrogen atoms from an amino group of an amino acid; a component (B): a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a mixture thereof; and a component (C): a solvent.03-31-2011
20110073974SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film (SiO03-31-2011
20110073973SEMICONDUCTOR LIGHT RECEIVING ELEMENT - A semiconductor light detecting element includes: a semiconductor substrate; and a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially laminated on the semiconductor substrate. The distributed Bragg reflector layer includes first and second alternately laminated semiconductor layers with different band-gap wavelengths, sandwiching the wavelength of detected incident light. The sum of thicknesses a first and a second semiconductor layer is approximately one-half the wavelength of the incident light detected.03-31-2011
20120119316SOLID-STATE IMAGING DEVICE AND METHOD FOR MAKING THE SAME, AND MANUFACTURING SUBSTRATE FOR SOLID-STATE IMAGING DEVICE - A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.05-17-2012
20110031573SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: photodetection cells formed in a semiconductor substrate and including respective photodetection photoelectric conversion elements for detecting light coming form a subject; black level detection cells formed in the semiconductor substrate, for detecting a black level; and a light shield layer which is formed over an area where the photodetection cells and the black level detection cells are formed, has openings over the respective photodetection photoelectric conversion elements of the photodetection cells, has no openings over the black level detection cells, and has contact portions that are in contact with the semiconductor substrate, the contact portions being formed only in or in the vicinity of plan-view areas of the black level detection cells, respectively.02-10-2011
20090026564SEMICONDUCTOR COMPONENT, LIGHTING UNIT FOR MATRIX SCREENS, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT - A semiconductor component, lighting unit for matrix screens, and method for manufacturing a semiconductor component is provided. The semiconductor component includes an integrated circuit, which has at least one light detector provided with a silicon-containing coating, particularly a coating of silicon nitride or silicon dioxide. A layer thickness of the silicon-containing coating, particularly the coating of silicon nitride or silicon dioxide, is selected in such a way that a predefinable, narrow-band, wavelength-selective transmission of light waves, particularly of light waves in a wavelength range from 300 nm to 850 nm, can be achieved.01-29-2009
20090026563SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s01-29-2009
20100006963WAFER LEVEL PROCESSING FOR BACKSIDE ILLUMINATED SENSORS - A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.01-14-2010
20110042765IMAGE SENSOR AND MANUFACTURING METHOD FOR SAME - An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.02-24-2011
20110042768Semiconductor Device and Method for Manufacturing Semiconductor Device - An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.02-24-2011
20110031575SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes first and second pixels formed on a semiconductor substrate. The first pixel includes: a first photoelectric conversion region located in an upper portion of the semiconductor substrate; a first transfer electrode; a light-shield film covering the first transfer electrode and having a first opening on the first photoelectric conversion region; and a first anti-reflection film located on the first photoelectric conversion region and, when viewed in plan, within the first opening so as not to overlap the first light-shield film. The second pixel includes: a second photoelectric conversion region located in an upper portion of the semiconductor substrate; a second transfer electrode; the light-shield film covering the second transfer electrode and having a second opening on the second photoelectric conversion region; and a second anti-reflection film located on the second photoelectric conversion region and continuously extending to a portion on the second transfer electrode.02-10-2011
20110248368SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a semiconductor substrate including a light receiving element, a silicon oxide film formed on the semiconductor substrate, a plurality of wiring interlayer films formed on the silicon oxide film, and each including a wiring layer formed as the result of the fact that copper is buried, and a silicon nitride film formed on the wiring interlayer film of the uppermost layer wherein Si—H concentration is smaller than N—H concentration.10-13-2011
20110248367IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.10-13-2011
20090014822MICROELECTRONIC IMAGERS AND METHODS FOR MANUFACTURING SUCH MICROELECTRONIC IMAGERS - Microelectronic imagers and methods of manufacturing such microelectronic imagers are disclosed. In one embodiment, a method for manufacturing a microelectronic imager can include irradiating selected portions of an imager housing unit. The housing unit includes a body having lead-in surfaces and a support surface that define a recess sized to receive a microelectronic die. The method also includes depositing a conductive material onto the irradiated portions of the housing unit and forming electrically conductive traces. The method further includes coupling a plurality of terminals at a front side of a microelectronic die to corresponding electrically conductive traces in the recess in a flip-chip configuration. The microelectronic die includes an image sensor aligned with at least a portion of an optical element carried by the housing unit and at least partially aligned with the recess. The method can then include depositing an encapsulant into the recess and over at least a portion of the microelectronic die.01-15-2009
20100244169SOLID-STATE IMAGING DEVICE, FABRICATION METHOD THEREOF, IMAGING APPARATUS, AND FABRICATION METHOD OF ANTI-REFLECTION STRUCTURE - A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.09-30-2010
20100244166Multilayer wiring substrate, stack structure sensor package, and method of manufacturing stack structure sensor package - A multilayer wiring substrate has a through hole that passes from a first surface through to a second surface. The multilayer wiring substrate includes an electrical connection terminal formed in at least one of an inner edge portion which is a periphery of the through hole, an outer edge portion which is an outer periphery of the substrate, and a non-edge portion, on at least one of the first surface and the second surface. The electrical connection terminal has a castellation structure that does not pass through to a surface opposite to a formation surface.09-30-2010
20080237764SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element comprises: a semiconductor substrate; and an amorphous metal oxide film as a first film deposited on the semiconductor substrate. By providing the amorphous metal oxide film as the first film, a recess with a large aspect ratio can be filled. As a result, a void/crack-free film of excellent quality can be formed.10-02-2008
20100244168SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a substrate including a plurality of light receiving sections; and a color filter including a guided-mode resonant grating provided immediately above each of the plurality of light receiving sections, at least one of an upper surface and a lower surface of the guided-mode resonant grating being covered with a layer having a lower refractive index than the guided-mode resonant grating.09-30-2010
20100244170PHOTO DETECTOR AND OPTICALLY INTERCONNECTED LSI - A photo detector having an electrically conductive thin film and a light-receiving unit. A coupling periodic structure is provided on a surface of the film and converts incidence light to surface plasmon. The coupling periodic structure has an opening that penetrates the obverse and reverse surfaces of the thin film. The light-receiving unit is provided at one end of the opening in the surface that is opposite to the surface on which the coupling periodic structure is provided. The opening is shaped like a slit and is broader than half (½) the wavelength of the surface plasmon in a direction that intersects at right angles with a polarization direction of the incidence light and is narrower than half (½) the wavelength of the surface plasmon in a direction parallel to the polarization direction.09-30-2010
20100244167SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - A solid-state imaging device includes: a substrate including a plurality of light receiving sections; an optical waveguide provided above each of the plurality of light receiving sections and surrounded by a cladding layer; a color filter provided above each of the optical waveguides; and a lens provided above the color filter, the optical waveguide including a first layer having a first refractive index and a second layer being in contact with the first layer and having a second refractive index higher than the first refractive index.09-30-2010
20100059838IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - An image sensor module includes a transparent substrate having recesses defined in a lower face thereof. A light concentration member includes transparent light concentration parts each of which are disposed in a corresponding one of the recesses. Color filters are disposed over each of the light concentration parts and photo diode units having photo diodes are disposed over each of the color filters. An insulation member covers the photo diode units and input/output terminals disposed over the insulation member are each electrically connected to a corresponding photo diode unit.03-11-2010
20090001494Backside illuminated image sensor - A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.01-01-2009
20090001491Method for producing a microchip that is able to detect infrared light with a semiconductor at room temperature - The inventions relate to a method for producing a microchip that is able to detect infrared light with a semiconductor, the basic infrared light is absorber by the semiconductor surrounded, attached or embedded in a polymer which is brought in a thin layer on the surface of the semiconductor and which is grown by polymer around the semiconductor in an acid fluid.01-01-2009
20090001490Optoelectronic Component that Emits Electromagnetic Radiation and Illumination Module - An optoelectronic component emitting electromagnetic radiation, comprising a housing body which has a cavity, the cavity being fashioned trenchlike and in the cavity a plurality of semiconductor chips being arranged in a linear arrangement. Two neighboring semiconductor chips have a distance from one another which is less than or equal to one-and-a-half lateral edge lengths of the semiconductor chips and greater than or equal to 0 μm. In addition, an illumination module comprising such a component is disclosed.01-01-2009
20090250778PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, PHOTOELECTRIC CONVERSION DEVICE DESIGNING METHOD, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD - A photoelectric conversion device comprises a plurality of photoelectric conversion units, a first antireflection portion including a first insulation film which has a first refractive index and a second insulation film which has a second refractive index, and a second antireflection portion including an element isolation portion which includes an insulator having a third refractive index and a third insulation film which has the second refractive index, wherein the first antireflection portion reduces reflection of light entering the photoelectric conversion unit in the photoelectric conversion unit, and the second antireflection portion reduces reflection of light entering the element isolation portion in the element isolation portion.10-08-2009
20080315339Solid-state imaging device - A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.12-25-2008
20110037135INTEGRATED CIRCUIT MANUFACTURING METHOD - A method of providing a dielectric material (02-17-2011
20090243013SEMICONDUCTOR PHOTORECEPTOR DEVICE - A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an n-cladding layer, a light absorption layer, and a p-cladding layer, laminated on one another over the n-contact layer, in that order. An Fe—InP current blocking layer is disposed on the n-cladding layer such that sides of the optical waveguide layer are buried in the Fe—InP current blocking layer. A p-electrode includes a contact electrode electrically connected to the p-cladding layer of the optical waveguide layer, a lead-out electrode portion extending on a side wall of the current blocking layer from the contact electrode and extending on the Fe—InP substrate, and an electrode pad disposed on a surface of the Fe—InP substrates with an SiN film between the electrode pad and the surface of the Fe—InP substrate and connected to the lead-out electrode portion.10-01-2009
20090230490SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device includes: photoelectric transducers arranged in a matrix pattern on a substrate; and a plurality of color filter layers of different colors formed above the photoelectric transducers so as to correspond to the photoelectric transducers. One of the color filter layers of the color, which accounts for a largest area, is formed by two layers which are a bottom layer and a top layer of the color filter layers.09-17-2009
20090230488Low dark current image sensor - Imaging sensors (CMOS image sensor, CCD) with low dark current. The disclosed embodiments employ a stacked structure directly on the sensing area. The stack structure an SiO09-17-2009
20090230489Low dark current image sensors by substrate engineering - Image sensors and the manufacture of image sensors having low dark current. A SiGe or Ge layer is selectively grown on the silicon substrate of the sensing area using an epitaxial chemical vapor deposition (CVD) method. After the SiGe or Ge growth, a silicon layer may be grown by the same epitaxial CVD method in an in-situ manner. This facilitates the formation of the hole accumulation diode and reduces the defect density of the substrate, resulting in device having a lower dark current.09-17-2009
20080315340SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING THE SAME - A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.12-25-2008
20090102001Image Sensor and a Method for Manufacturing Thereof - An image sensor according to an embodiment includes a semiconductor substrate including a photodiode; a protective layer pattern having a lower trench that is disposed on the semiconductor substrate to expose the photodiode; an insulating layer pattern having the upper trench that is disposed on the lower trench of the protective layer pattern to expose the photodiode; and a wave guide that is disposed in the lower trench and the upper trench.04-23-2009
20080290436Photon guiding structure and method of forming the same - A photon guiding structure for reducing optical crosstalk in an image sensor and method of forming the same. The method includes forming a trench within an interlayer dielectric region formed over a photo-conversion device. The trench is formed such that it is vertically aligned with and has a horizontal cross-sectional shape similar to that of the photo-conversion device. A material is formed within the trench and a dielectric is formed over the material. The lined trench causes photons to strike the proper photo-conversion device and, as such, reduces the chance that photons will impinge upon neighboring photo-conversion devices.11-27-2008
20090014823SOLID STATE IMAGING DEVICE IN WHICH A PLURALITY OF IMAGING PIXELS ARE ARRANGED TWO-DIMENSIONALLY, AND A MANUFACTURING METHOD FOR THE SOLID STATE IMAGING DEVICE - A solid state imaging device includes a plurality of imaging pixels that are arranged two-dimensionally along a main face of a semiconductor substrate. Each imaging pixel in the solid state imaging device includes a photodiode that performs photoelectric conversion and a color filter that is disposed higher in the Z axis direction than the photodiode. Also, light blocking portions have been formed between pairs of adjacent imaging pixels, on the main face of the semiconductor substrate to a height in a thickness direction (Z axis direction) of the semiconductor substrate that is substantially equal to or higher than top edges of the optical filters. Each light blocking portion is constituted from a combination of a light blocking film and a light blocking wall.01-15-2009
20080251874Solid-state image capturing Device, method for the same, and electronic information device - A solid-state image capturing device according to the present invention is provided, in which a plurality of conductive films is formed via respective insulation films, and an optical waveguide is formed above a light receiving section, a plurality of light receiving sections is provided in a surface portion of a semiconductor substrate, and the plurality of conductive films is formed on a region other than a region right above the light receiving section, wherein a plural-layered optical waveguide tube is formed as the optical waveguide, with the same material as at least one of the plural-layered conductive films.10-16-2008
20080251872IMAGE SENSOR PACKAGE, METHOD OF MANUFACTURING THE SAME, AND IMAGE SENSOR MODULE INCLUDING THE IMAGE SENSOR PACKAGE - An image sensor package, a method of manufacturing the same, and an image sensor module including the image sensor package are provided. In the image sensor package, an image sensor chip is installed onto a depression of a transmissive substrate. An adhesive bonds the image sensor chip to the transmissive substrate and seals an Active Pixel Sensor (APS) on the image sensor chip, protecting it from fine particle contamination. An IR cutting film is disposed on the transmissive substrate to minimize the height of the image sensor package. The image sensor package is electrically connected to external connection pads in the depression. Consequently, the image sensor package has a minimum height, is not susceptible to particle contamination, and does not require expensive alignment processes during manufacturing.10-16-2008
20080251873SOLID-STATE IMAGING DEVICE, MANUFACTORING METHOD THEREOF AND CAMERA - A solid-state imaging device which includes a color filter having excellent color reproduction, a manufacturing method thereof and a camera are provided.10-16-2008
20080251871Semiconductor fabrication method and system - Embodiments of the present invention are generally directed to a method for manufacturing a semiconductor device. In one embodiment, the method includes providing a substrate that includes a via or interconnect. In this embodiment, the method also includes forming a sealed array, in which forming such an array includes attaching a carrier to a first surface of the substrate to form a sealed cavity between the carrier and the substrate. Further, the method of this embodiment also includes forming a redistribution layer on the sealed array over a second surface of the substrate. Devices and systems having a carrier attached to a substrate are also disclosed.10-16-2008
20080211047SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A solid-state imaging device includes a semiconductor substrate, a first pixel with a green color filter, a second pixel with a blue color filter and a third pixel with a red color filter. The first pixel includes a first area for generating an electric signal by photoelectric conversion, disposed in a first trench that is formed on a surface of the semiconductor substrate, and a first transistor area that outputs the electric signal obtained from the first area. The second pixel includes a second area formed in a flat shape on the surface of the semiconductor substrate, and a second transistor area that outputs the electric signal obtained from the second area. The third pixel includes a third area formed in a flat shape on the surface of the semiconductor substrate, and a third transistor area that outputs the electric signal obtained from the third area.09-04-2008
20080203508Image sensing device having protection pattern on the microlens, camera module, and method of forming the same - An image sensing device having a protection pattern formed on microlenses is provided. The device includes a plurality of photodiodes provided in a semiconductor substrate. An insulating layer having a substantially flat top surface is disposed on the photodiodes. A plurality of microlenses are provided on the insulating layer and disposed over the photodiodes. The microlenses are covered with a protection pattern. The protection pattern can be formed of an oxide-based photosensitive polymer layer or a nitride-based photosensitive polymer layer, as examples. The protection pattern can have a substantially flat top surface.08-28-2008
20080203509PHOTOELECTRIC CONVERSION DEVISE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device comprises a photoelectric conversion element disposed at a semiconductor substrate, and a multilayered wiring structure including a plurality of wiring layers disposed over the semiconductor substrate in such a manner to sandwich an interlayer insulation film therebetween. A diffusion suppressing film is disposed at least on the uppermost one of the wiring layers, the diffusion suppressing film serving to suppress diffusion of material forming the uppermost wiring layer; the diffusion suppressing film covers regions of the uppermost wiring layer and the interlayer insulation film corresponding to the photoelectric conversion element; and a lens is disposed with respect to a region of the diffusion suppressing film corresponding to the photoelectric conversion element.08-28-2008
20080203507Image sensors for zoom lenses and fabricating methods thereof - An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.08-28-2008
20110254115INSERTED REFLECTIVE SHIELD TO IMPROVE QUANTUM EFFICIENCY OF IMAGE SENSORS - The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.10-20-2011
20100320553ILLUMINATED FINGER SENSOR ASSEMBLY AND RELATED METHODS - A finger sensor assembly may include a circuit board and an integrated circuit (IC) finger sensor grid array package including a grid array on a lower end thereof mounted to the circuit board, and a finger sensing area on an upper end thereof. The finger sensor assembly may further include at least one visible light source carried by the circuit board and a visible light guide optically coupled to the at least one visible light source. The at least one visible light source may at least partially laterally surround the upper end of the IC finger sensor grid array package to provide visual light indications. The IC finger sensor grid array package may also include circuitry for controlling the at least one visible light source.12-23-2010
20100320554METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, AND SOLID STATE IMAGING DEVICE - Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.12-23-2010
20080197437Solid-state imaging apparatus, manufacturing method therefor and electronic equipment using the same - Provided is a solid-state imaging apparatus having excellent reading accuracy. The solid-state imaging apparatus of the present invention includes a solid-state imaging element (light receiving element portion) (08-21-2008
20110031574SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a first well layer which is provided in a semiconductor substrate, has a conductivity type that is opposite to a conductivity type of the semiconductor substrate, and includes photoelectric conversion elements and a reading unit for reading signals corresponding to charges generated in the respective photoelectric conversion elements; a second well layer provided in the semiconductor substrate and having the conductivity type that is opposite to the conductivity type of the semiconductor substrate; and a light shield layer which is provided over an area where the photoelectric conversion elements are provided, has openings over the respective photoelectric conversion elements, and has contact portions that are in contact with the second well layer.02-10-2011
20110049661SOLID-STATE IMAGING DEVICE AND PROCESS OF MAKING SOLID STATE IMAGING DEVICE - A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters.03-03-2011
20110068426PHOTODIODES AND METHODS FOR FABRICATING PHOTODIODES - A photodiode includes an opening over an active photodiode region so that a top passivation layer and interlayer dielectric layers (ILDs) do not affect the spectral response of the photodiode. A dielectric reflective optical coating filter, which includes a plurality of dielectric layers, fills at least a portion of the opening and thereby covers the active photodiode region, to shape a spectral response of the photodiode. Alternatively, the dielectric reflective optical coating filter is formed prior to the opening, and the opening is formed by removing a top passivation coating and ILDs to expose the dielectric reflective optical coating filter.03-24-2011
20110018079APPARATUS AND METHOD OF MANUFACTURE FOR DEPOSITING A COMPOSITE ANTI-REFLECTION LAYER ON A SILICON SURFACE - An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.01-27-2011
20100181635METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES - Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.07-22-2010
20100181634METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES - Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.07-22-2010
20110163403NANOSTRUCTURE-BASED TRANSPARENT CONDUCTORS HAVING INCREASED HAZE AND DEVICES COMPRISING THE SAME - The present disclosure relates to modifications to nanostructure based transparent conductors to achieve increased haze/light-scattering with different and tunable degrees of scattering, different materials, and different microstructures and nanostructures.07-07-2011
20110169120INTEGRATED CIRCUIT WITH GRATING AND MANUFACTURING METHOD THEREFOR - Disclosed is an integrated circuit (07-14-2011
20100117177Image Sensor and Method of Manufacturing the Same - An image sensor and a method of manufacturing the same are disclosed. A passivation layer on an interlayer dielectric layer has different thicknesses for neighboring pixels. Consequently, a phase of light incident on a pixel is out of phase with light incident on an adjacent pixel before it reaches a photodiode. As a result, diffraction of the incident light results in destructive interference between the pixels. Thus, cross talk between adjacent pixels can be prevented.05-13-2010
20100117181SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package includes a semiconductor chip, a transparent substrate, an adhesive pattern, and at least one dew-proofer. The semiconductor includes a pixel area. The transparent substrate is disposed on the semiconductor chip. The adhesive pattern is disposed between the semiconductor chip and the transparent substrate and provides a space on the pixel area. At least one dew-proofer is disposed between the semiconductor chip and the transparent substrate and spaced from the adhesive pattern.05-13-2010
20100117182IMAGE PICKUP DEVICE - An image pickup device includes a plurality of photoelectric transducers. The plurality of photoelectric transducers includes color filters provided thereon. A diffusion-reflection layer is provided in front of the plurality of photoelectric transducers, includes a microstructure which is finer than each light receiving element of the image pickup device and is provided on surfaces of the color filters so as to diffuse and reflect a part of incident light. A part of incident light on the diffusion-reflection layer is reflected and dispersed therefrom, and a remainder of the incident light is transmitted through the diffusion-reflection layer so as to be incident on the plurality of photoelectric transducers.05-13-2010
20100117178IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor is disclosed that includes a first substrate including an electric junction region, a transistor, and a metal line connected to the electric junction region or the transistor; and a photodiode formed on the first substrate. The first substrate is formed at an upper portion thereof with a reflective layer to reflect light back to the photodiode.05-13-2010
20100117180IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same. An image sensor may include a first interlayer dielectric layer having a first metal wiring and/or a bonding silicon including impurity regions on and/or over a first interlayer dielectric layer. An image sensor may include a second interlayer dielectric layer formed on and/or over a bonding silicon, and/or a first contact plug connected to a first metal wiring. An image sensor may include a third interlayer dielectric layer on and/or over a second interlayer dielectric layer, a second contact plug connected to a first impurity region and/or a second metal wiring on and/or over a second interlayer dielectric layer. An image sensor may include and a color filter layer and/or a microlens. A dielectric layer may be between a first contact plug and a first impurity region. A dielectric layer may be on and/or over a second interlayer dielectric layer.05-13-2010
20100117179IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a substrate, a bonding silicon, an interlayer dielectric, a first contact plug, a second contact plug, a second metal interconnection, and a color filter layer and a microlens. The substrate comprises a first metal interconnection. The bonding silicon is formed on the substrate, and comprises a plurality of impurity regions. The interlayer dielectric is formed on the bonding silicon. The first contact plug penetrates the bonding silicon and is electrically connected to the first metal interconnection. The second contact plug penetrates the interlayer dielectric and is connected to a surface of the bonding silicon. The second metal interconnection is formed on the interlayer dielectric, and is connected to the second contact plug. The color filter layer and a microlens are formed over the second metal interconnection.05-13-2010
20110068425Optical device having light sensor employing horizontal electrical field - The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.03-24-2011
20110068424THICK BOND PAD FOR CHIP WITH CAVITY PACKAGE - Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and an optically transparent layer contacting the polymer layer and covering the cavity.03-24-2011
20110079868SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the diffusion layer region in a pixel region, and a first deep diffusion layer of the first conductive type provided at the deepest position of the diffusion layer region in a first peripheral logic region for electrically connecting the semiconductor substrate and the first peripheral logic region and having a first concentration gradient equal to that of the diffusion layer for pixel separation.04-07-2011
20110079867SOLID-STATE IMAGING DEVICE - A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N04-07-2011
20120146171Image Sensor Unit and Image Sensor Apparatus - An image sensor unit includes a fixed substrate, a movable substrate, an actuate section including an actuator for moving the movable substrate against the fixed substrate, an image sensor having an imaging surface on a front surface of the image sensor, and at least, a part of a rear surface of the image sensor being directly fixed onto the movable substrate, an external electrical connecting member for conducting a transmission and reception of signals between the actuate section and the image sensor and an outside of the image sensor unit, and an internal electrical connecting member electrically connects the actuate section, the image sensor and the external connection wiring, wherein the actuate section, the image sensor, the internal connection wiring and a part of the external connection wiring are sealed into the same space.06-14-2012
20110095389Optoelectronic Semiconductor Device and Method of Fabrication - An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.04-28-2011
20110095388AVALANCHE PHOTODIODE - The invention relates to an avalanche photodiode (04-28-2011
20100283112Light Guide Array for An Image Sensor - An image sensor pixel that includes a photoelectric conversion unit (11-11-2010
20100059843SOLID-STATE IMAGING DEVICE AND METHOD FOR MAKING THE SAME, AND MANUFACTURING SUBSTRATE FOR SOLID-STATE IMAGING DEVICE - A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.03-11-2010
20100059841IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes an image sensing device on a substrate, an interlayer dielectric layer over the image sensing device, and an aspheric microlens over the interlayer dielectric layer.03-11-2010
20100059842IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A manufacturing method of an image sensor includes forming a photodiode region by implanting impurity ions in a semiconductor substrate, forming an interlayer dielectric over the semiconductor substrate having the photodiode region, forming a recess in the interlayer dielectric to expose the photodiode region, vapor-depositing a plurality of refractive layers over an inner surface of the recess, each refractive layer having a different refractive index, forming a color filter layer over the interlayer dielectric having the plurality of refractive layers, and forming a micro lens over the color filter layer.03-11-2010
20100059845IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a plurality of unit pixels arranged in a matrix shape, each of which is disposed in a region defined by a gate line extending in a first direction and a data line extending in a second direction that is different from the first direction. Each of the unit pixels includes a switching diode and a sensing diode. The switching diode has a plus terminal electrically connected to the gate line, and a minus terminal electrically connected to a signal node. The sensing diode has a plus terminal electrically connected to the data line, and a minus terminal electrically connected to the signal node. Therefore, a two-dimensional image may be sensed at once without moving of the sensing module so that scan time (image sensing time) may be reduced.03-11-2010
20100059844SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DESIGNING METHOD - A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.03-11-2010
20100059840CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A Complementary Metal Oxide Semiconductor (CMOS) image sensor and a method for manufacturing the same are disclosed. The CMOS image sensor includes a photodiode formed in a semiconductor substrate, an inter dielectric layer formed over the semiconductor substrate in which the photodiode is formed, at least one metal line layer formed in the inter dielectric layer, an anti-reflection layer formed over the metal line layer in the inter dielectric layer, a color filter layer formed over the inter dielectric layer, and a micro-lens formed over the color filter layer.03-11-2010
20100059839LIGHT RECEIVING ELEMENT - A light receiving element comprises: a photodiode including an optical waveguide, an end surface of the optical waveguide being a light receiving surface of the photodiode; a signal electrode and a bias electrode on a common surface of the photodiode, the signal electrode being connected to an anode of the photodiode, the bias electrode being connected to a cathode of the photodiode; an insulating film on the bias electrode; and a metal electrode on the insulating film.03-11-2010
20100032783METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; forming at least one bond pad region extending into the epitaxial layer to a surface of the insulator layer; fabricating at least one bond pad at least partially overlying the at least one bond pad region; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer, fabricating a passivation layer substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component; bonding a handle wafer to the passivation layer; and etching through at least a portion of the insulator layer and at least a portion of the bond pad region to expose at least a portion of the at least one bond pad.02-11-2010
20110260276SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.10-27-2011
20110260275ELECTRONIC DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are an electronic device package and a method of manufacturing the same. The electronic device package includes an electronic device including a polymer layer and a passivation layer configured to protect a device layer, a substrate assembly facing the electronic device, and a sealing ring formed in a closed loop between the electronic device and the substrate assembly and surrounding a sealing region. At least one side surface of the sealing ring contacts the polymer layer, and the sealing ring is disposed on the passivation layer. A polymer layer such as a microlens and a color filter is removed from a region provided with a sealing ring to form the sealing ring on a passivation layer, thereby making the sealing ring and joints the same height, thus preventing an electrical defect.10-27-2011
20110147872OPTICAL DEVICE, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING THE SAME - An optical device includes a semiconductor device, a light receiving part formed on the main surface of the semiconductor device, and a transparent board laminated above the main surface of the semiconductor device, with an adhesive material interposed between the transparent board and the main surface of the semiconductor device. A serrated part is formed on at least one of (i) the main surface that is of the transparent board and faces the semiconductor device and (ii) the back surface of the transparent board.06-23-2011
20110147871SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device and a method of manufacturing the same, which have a device structure ensuring high degrees of reliability and mass-productivity at low cost.06-23-2011
20110147870PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF - According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.06-23-2011
20110147869INTEGRATED INFRARED SENSORS WITH OPTICAL ELEMENTS, AND METHODS - An infrared (IR) radiation sensor device (06-23-2011
20110186952SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THEREOF, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including a first photoelectric-conversion-portion selectively receiving a first wavelength light in incident light and performing photoelectric conversion; and a second photoelectric-conversion-portion selectively receiving a second wavelength light which is shorter than the first wavelength, wherein the first photoelectric-conversion-portion is laminated above the second photoelectric-conversion-portion in an imaging area of a substrate so that the second photoelectric-conversion-portion receives the light transmitting the first photoelectric-conversion-portion, wherein a transmitting portion is formed in the first photoelectric-conversion-portion so that the second wavelength light transmits the second photoelectric-conversion-portion more than other portions, and wherein the transmitting portion is formed to include a portion satisfying the following Equation within a width D defined in the direction of the imaging area, a refraction index n of a peripheral portion of the transmitting portion, and the longest wavelength λc of the second wavelength range selectively photoelectrically-converted in the second photoelectric-conversion-portion:08-04-2011
20110186951BACKSIDE ILLUMINATED SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element.08-04-2011
20110186950METHOD OF FABRICATING IMAGE SENSOR AND IMAGE SENSOR THEREOF - A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array.08-04-2011
20110186953METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a semiconductor body connected to a main area of a carrier body by a solder layer, wherein sidewalls of the semiconductor body are provided with a dielectric layer, and a mirror layer applied to the dielectric layer.08-04-2011
20100025792IMAGE PICKUP APPARATUS, MANUFACTURING METHOD THEREOF, AND MOBILE TERMINAL - Degradation of a picked-up image quality occurs because of entry or a move of dust in the internal space of an image pickup apparatus. An image pickup apparatus for decreasing degradation of the image quality by capturing dust is provided. An image pickup apparatus 02-04-2010
20100025791SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - An interconnect layer is formed on a lower face of a silicon wafer, a support substrate is adhered over a lower face of the interconnect layer, and a thickness reduction of the silicon wafer is performed from an upper face side. Next, a photodiode is formed in an upper face of the silicon wafer, and a microlens is formed at a position corresponding to the photodiode. An adhesive layer is formed on the silicon wafer in a region not covering the microlens, a low refractive index layer having a lower refractive index than the microlens is formed in a region covering the microlens, and a glass substrate is adhered to the silicon wafer by the adhesive layer. The support substrate is removed from the interconnect layer, and a solder ball is bonded to a lower face of the interconnect layer. Thereafter, a CMOS image sensor is manufactured by dicing the silicon wafer.02-04-2010
20100025790IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a semiconductor substrate having first and second surfaces opposite to each other, an isolation layer defining an active region while extending from the first surface toward the second surface, a photodiode in the active region and extending from the first surface toward the second surface, a reflection part adjacent to the first surface and disposed corresponding to the photodiode, and a lens part adjacent to the second surface.02-04-2010
20100025789IMAGING DEVICE, METHOD FOR MANUFACTURING THE IMAGING DEVICE AND CELLULAR PHONE - An imaging device includes a lens (02-04-2010
20100025787System and method for providing a high frequency response silicon photodetector - A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.02-04-2010
20110215432SPECTROSCOPIC SENSOR AND ELECTRONIC APPARATUS - A spectroscopic sensor has plural angle limiting filters that limit incident angles of incident lights, plural light band-pass filters that transmit specific wavelengths, and plural photodiodes to which corresponding transmitted lights are input. The spectroscopic sensor is a semiconductor device in which the angle limiting filters, the light band-pass filters, and the photodiodes are integrated, and, assuming that the surface on which impurity regions for the photodiodes are formed is a front surface of a semiconductor substrate, holes for receiving lights are formed in the impurity regions from the rear surface side.09-08-2011
20100019336MEMS DEVICES HAVING OVERLYING SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME - Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.01-28-2010
20100019335Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.01-28-2010
20100019334Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.01-28-2010
20090152659REFLOWABLE CAMERA MODULE WITH IMPROVED RELIABILITY OF SOLDER CONNECTIONS - A reflowable camera module has a set of solder joints formed on a bottom surface of the camera module that provide electrical signal and power connections between the camera module and a printed circuit substrate. The solder joints are susceptible to failure caused by shear forces, particularly in corner regions. Additional localized mechanical supports are provided to protect those solder joints carrying power and electrical signals for the camera module. The localized mechanical supports are formed outside of a region containing the solder joints carrying power and electrical signals. The localized mechanical supports may include dummy solder joints formed in corner regions and/or dummy leads used to support the camera module. Solder joint reliability is enhanced without requiring the use of an underfill encapsulant.06-18-2009
20120146170MANUFACTURING OF A CAMERA MODULE - A camera module includes a sensor die, a glass plate, peripheral spacer, an optical element, an outer surface having a shoulder extending in a direction substantially parallel to the sensor die, and a metal layer at least partially covering the outer surface. A method of manufacturing a camera module includes providing an assembly including a sensor dice wafer, a spacer wafer in front of the sensor dice wafer, and an optical element wafer in front of the spacer wafer. The method includes sawing a top cut, using a first saw blade of a first thickness, proceeding in a direction from the optical element wafer toward the sensor dice wafer, stopping before the sensor dice wafer is reached, and sawing a bottom cut, using a second saw blade of a second thickness, proceeding in a direction from the sensor dice wafer toward the optical element wafer.06-14-2012
20080272453OPTICAL DEVICE COOLING APPARATUS AND METHOD - An optical device cooling apparatus includes an image sensor array and a MEMS fan. The MEMS fan is formed integrally with the image sensor array, and cools the image sensor array.11-06-2008
20110101482METHOD OF MANUFACTURE OF A BACKSIDE ILLUMINATED IMAGE SENSOR - A method of manufacturing a backside illuminated image sensor includes providing a start material that has a layer of semiconductor material on a substrate. The layer of semiconductor material has a first face and a second, backside, face. The layer of semiconductor material is processed to form semiconductor devices in the layer adjacent the first face. At least a part of the substrate is removed to leave an exposed face. A passivation layer is formed on the exposed face, the passivation layer having negative fixed charges. The passivation layer can be Al2O3 (Sapphire). The passivation layer can have a thickness less than 5 μm, advantageously less than 1 μm, and more advantageously in the range 1 nm-150 nm. Another layer, or layers, can be provided on the passivation layer, including: an anti-reflective layer, a layer to improve passivation, a layer including a color filter pattern, a layer comprising a microlens.05-05-2011
20090174019IMAGE SENSING DEVICE AND MANUFACTURE METHOD THEREOF - An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.07-09-2009
20090174020SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device includes a substrate having a plurality of pixels and a plurality of on-chip lenses arranged above the substrate, each on-chip lens having a lens surface formed by subjecting a transparent photosensitive film to exposure using a mask having a gradation pattern and development so that the lens surface serves to correct shading in accordance with the gradation pattern.07-09-2009
20090174018CONSTRUCTION METHODS FOR BACKSIDE ILLUMINATED IMAGE SENSORS - A method of constructing a backside illuminated image sensor is described. The method includes the steps of forming a semiconductor wafer, forming at least electrical contacts in the semiconductor wafer, forming, in a handle wafer separate from the semiconductor wafer, a plurality of via holes, attaching the semiconductor wafer to the handle wafer such that the via holes in the handle wafer are aligned with the respective electrical contacts on the semiconductor wafer, removing the substrate layer from the semiconductor wafer, removing at least a portion of the handle wafer to expose the plurality of via holes, filling each of the exposed via holes with a conductive material and applying a solder material to each of the exposed via holes such that the conductive material in each of the via holes is electrically connected to the solder material.07-09-2009
20110073976BACK-SIDE IMAGE SENSOR - A color back-side illuminated image sensor including, on the side of the thin semiconductor layer opposite to the illuminated surface, periodic thickness unevennesses forming an optic network having characteristics which make it capable of reflecting a given wavelength chosen within the range of the wavelengths of an illuminating incident beam.03-31-2011
20110133301WAFER LEVEL OPTICAL IMAGING APPARATUS - A wafer level optical imaging apparatus includes a covering substrate that covers an imaging unit. A top shading layer is formed on a top surface of the covering substrate, and a bottom shading layer is formed on a bottom surface of the covering substrate.06-09-2011
20110303999SEMICONDUCTOR LIGHT-DETECTING ELEMENT - Prepared is an n12-15-2011
20120205767 PLASMONIC DETECTOR AND METHOD FOR MANUFACTURING THE SAME - A plasmonic detector and method for manufacturing a plasmonic detector. The plasmonic detector comprises two nanoscale metallic rods coupled to a bias voltage; a nanoscale cavity formed between adjacent ends of the two nanoscale metallic rods; and an absorption material disposed in the nanoscale cavity for converting an electromagnetic field to an electric current for outputting via the nanoscale metallic rods.08-16-2012
20110140219PHOTOELECTRIC CONVERSION DEVICE - A device includes a plurality of photoelectric conversion regions, an interlayer insulating film arranged on the plurality of photoelectric conversion regions, a protective insulating film that is arranged in contact with the interlayer insulating film and has a refractive index different from that of the interlayer insulating film, recesses arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions, and embedded regions embedded in the recesses. When a wavelength of incident light to each of the plurality of photoelectric conversion regions is denoted by λ and a refractive index of the embedded regions is denoted by n, a depth d of the recesses is represented by an expression d≧λ/4n.06-16-2011
20120205766SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS - A solid-state imaging device includes: an optical filter in which a filter layer is formed on a transparent substrate; a solid-state imaging component that is arranged to be opposed to the optical filter and in which plural pixels that receive light made incident via the filter layer are arrayed in a pixel area of a semiconductor substrate; and a bonding layer that is provided between the optical filter and the solid-state imaging component and sticks the optical filter and the solid-state imaging component together.08-16-2012
20110057278X-RAY DETECTOR USING LIQUID CRYSTAL DEVICE - An X-ray detector includes a first substrate having a bottom surface on which a first electrode is formed. A second substrate has a top surface on which a second electrode and a polyimide layer are sequentially formed. A photoconductive layer is formed on a bottom surface of the first electrode and generates electron-hole pairs. A reflective layer is formed on a bottom surface of the photoconductive layer. A liquid crystal polymer layer is formed on a bottom surface of the reflective layer, and peaks and valleys are alternately formed on a bottom surface of the liquid crystal polymer layer. A liquid crystal layer is formed between the liquid crystal polymer layer and the polyimide layer, and liquid crystal molecules are aligned in a direction in which the peaks and valleys on the bottom surface are arranged.03-10-2011
20110115040Semiconductor Optoelectronic Structure and the Fabricating Method Thereof - A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.05-19-2011
20120306037PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD - A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.12-06-2012
20120306035PROCESS FOR FABRICATING A BACKSIDE-ILLUMINATED IMAGING DEVICE AND CORRESPONDING DEVICE - An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.12-06-2012
20120306036FLIP-CHIP PHOTODIODE - A photodiode is provided according to various embodiments. In some embodiments, the photodiode includes a substrate and an active region. The active region is configured to receive light through the substrate. In such a configuration, the substrate not only participates in the photodiode operation acts as a light filter depending on the substrate material. In some embodiments, the active region may include solder balls that may be used to couple the photodiode to a printed circuit board. In some embodiments, the active region is coupled face-to-face with the printed circuit board.12-06-2012
20090008729IMAGE SENSOR PACKAGE UTILIZING A REMOVABLE PROTECTION FILM AND METHOD OF MAKING THE SAME - The present invention discloses a structure of image sensor package utilizing a removable protection film. The structure comprises a substrate with a die receiving cavity and inter-connecting through holes. Terminal pads are formed under the inter-connecting through holes and metal pads are formed on an upper surface of the substrate. A die is disposed within the die receiving cavity by an adhesion material. Bonding pads are formed on the upper edge of the die. Bonding wires are coupled to the metal pads and the bonding pads. A protection layer is formed on the micro lens area to protect the micro lens from particle contamination. A removable protection film is formed over the protection layer to protect the micro lens from water, oil, dust or temporary impact during the packaging and assembling process.01-08-2009
20120146169METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE AND SOLID STATE IMAGING DEVICE - Certain embodiments provide a method for manufacturing a solid state imaging device, the method including: forming a plurality of first semispherical lens bodies; forming a second transparent resin layer; and forming a second lens body. The plurality of first semispherical lens bodies are respectively formed on a plurality of photodiode layers formed on a principal surface of a semiconductor substrate. The second transparent resin layer is a resin layer having an etching rate higher than that of the first lens body, and is formed so that the semiconductor substrate including the plurality of first lens bodies is covered with the second transparent resin layer. The second lens bodies are formed on a surface except the top part of each of the first lens bodies by etching an entire surface of the second transparent resin layer until top parts of the first lens bodies are exposed.06-14-2012
20120038013METHOD AND APPARATUS FOR A LATERAL RADIATION DETECTOR - A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.02-16-2012
20120153420OPTICAL STRUCTURE OF SEMICONDUCTOR PHOTOMULTIPLIER AND FABRICATION METHOD THEREOF - Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.06-21-2012
20110316106LIGHT PIPE ETCH CONTROL FOR CMOS FABRICATION - In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.12-29-2011
20110316107SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD OF THE SENSOR - A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer is bonded to the silicon oxide layer on the first wafer. After that, an SOI wafer including the silicon oxide layer formed on the second wafer and the single crystal silicon layer formed on the silicon oxide layer is formed by separating the first wafer including the single crystal silicon layer from the second wafer including the single crystal silicon layer in the defect layer. Then, a photodiode is formed in the single crystal silicon layer. An interconnect layer is formed on a surface of the single crystal silicon layer which is opposite to the silicon oxide layer.12-29-2011
20120001284SILICON NITRIDE LIGHT PIPES FOR IMAGE SENSORS - Various embodiments for etching of silicon nitride (Si01-05-2012
20120043635Image Sensor Package with Dual Substrates and the Method of the Same - The image sensor package with dual substrates comprises a first substrate with a die receiving opening and a plurality of first through hole penetrated through the first substrate; a second substrate with a die opening window and a plurality of second through hole penetrated through the second substrate, formed on the first substrate. A part of the second wiring pattern is coupled to a part of the third wiring pattern; an image die having conductive pads and sensing array received within the die receiving opening and the sensing array being exposed by the die opening window; and a through hole conductive material refilled into the plurality of second through hole, some of the plurality of second through hole coupling to the conductive pads of the image sensor.02-23-2012
20120043634METHOD OF MANUFACTURING MICROLENS ARRAY, METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, AND SOLID-STATE IMAGE SENSOR - A method of manufacturing a microlens array includes forming a resist film on a structure including a plurality of light-receiving portions, exposing the resist film using a photomask in which a plurality of lens patterns for forming a plurality of microlenses are arranged, forming a resist pattern by developing the exposed resist film, and forming the plurality of microlens by annealing the resist pattern, wherein the plurality of lens patterns include lens patterns having exposure light transmittance distributions different from each other.02-23-2012
20120001285SOLID STATE IMAGING APPARATUS - According to one embodiment, in the upper laminated structure, first layers and second layers are alternately laminated, the first layer and the second layer having different refractive indices. In the lower laminated structure, first layers and second layers are alternately laminated, the first layer and the second layer having different refractive indices. The upper laminated structure and the lower laminated structure are equal in number of layers laminated therein. Each of the lowermost layer of the upper laminated structure and the uppermost layer of the lower laminated structure are configured by the first layer. The upper laminated structure and the lower laminated structure are configured to be asymmetric to each other such that, within some layer sets out of a plurality of layer sets each including two layers disposed at corresponding positions in the upper and lower laminated layers, one layer of the two layers in each layer set of the some layer sets is thinner than the other layer.01-05-2012
20120001287IMAGE SENSOR AND METHOD FOR MANUFACTURING AN IMAGE SENSOR - An image sensor and a method for manufacturing an image sensor are described in which the image sensor includes at least one substrate having a plurality of light-sensitive elements forming a sensor field and first microfilter elements for wavelength-selective filtering of incident light. The first microfilter elements are attached to a transparent carrier made of glass or a transparent film, for example. A first microfilter element is situated in front of a portion of the light-sensitive elements for wavelength-selective filtering of light striking the light-sensitive element. No microfilter element is situated in front of a further portion of the light-sensitive elements.01-05-2012
20120001288SUB-PIXEL NBN DETECTOR - A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.01-05-2012
20120001286IMAGE SENSOR AND PACKAGE INCLUDING THE IMAGE SENSOR - Provided are an image sensor and a package including the same. The image sensor may include an interconnection layer comprising a plurality of interconnections that are vertically stacked, a light penetration layer including color filters and microlenses, a semiconductor layer disposed between the interconnection layer and the light penetration layer and including photoelectrical transformation elements and a light shielding pattern disposed between the light penetration layer and the semiconductor layer. A surface of the semiconductor layer adjacent to the light penetration layer defines a recess region recessed toward the interconnection layer. The light shielding pattern is formed in the recess region and at least one of the photoelectrical transformation elements is formed in the semiconductor layer between the light shielding pattern and the interconnection layer.01-05-2012
20120001289UNIT PIXEL ARRAY OF AN IMAGE SENSOR - A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.01-05-2012
20110156189PHOTODETECTOR WITH A PLASMONIC STRUCTURE - This photodetector capable of detecting electromagnetic radiation comprises: 06-30-2011
20110156188IMAGE SENSOR PACKAGING STRUCTURE WITH LOW TRANSMITTANCE ENCAPSULANT - An image sensor packaging structure with a low transmittance encapsulant is provided. The image sensor packaging structure includes a substrate, a chip, a transparent lid, and the low transmittance encapsulant. The chip is combined with the substrate. The transparent lid is adhered to the chip and cover above a sensitization area of the chip to form an air cavity. The low transmittance encapsulant is formed on the substrate and encapsulates the chip and the transparent lid so as to accomplish the package of the image sensor packaging structure. Due to the feature of prohibiting from light passing through the low transmittance encapsulant, the arrangement of the low transmittance encapsulant can avoid the light from outside interfere the image sensing effect of the image sensor. Therefore, the quality of the image sensing can be ensured.06-30-2011
20110156187IMAGE SENSOR PACKAGING STRUCTURE WITH PREDETERMINED FOCAL LENGTH - An image sensor packaging structure with a predetermined focal length is provided. The image sensor packaging structure includes a substrate, a chip, an optical assembly, and an encapsulation compound. The chip has a sensitization area and is coupled to the substrate. Conductive contacts on the substrate are electrically connected with conductive contacts around the sensitization area. The optical assembly has the predetermined focal length and is disposed above the chip so as to form an air cavity between the optical assembly and the sensitization area of the chip. The encapsulation compound is formed on the substrate to surround the chip and the optical assembly. With the above stated structure, not only can the focus adjusting procedure be dispensed with, but also the image sensor packaging structure can be manufactured by a molding or dispensing process.06-30-2011
20110156185Resin Composition for Protection Layer of Color Filter, Protection Layer of Color Filter Using Same and Image Sensor Including Same - Disclosed is a resin composition for a protective layer of a color filter including an acrylate-based resin including a repeating unit represented by each of Chemical Formulae 1 to 3, a melamine-based resin represented by Chemical Formula 4, a thermal acid generator (TAG), and a solvent.06-30-2011
20110156183INTEGRATED OPTICAL RECEIVER ARCHITECTURE FOR HIGH SPEED OPTICAL I/O APPLICATIONS - An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.06-30-2011
20110156186SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.06-30-2011
20110156184Methods for improving detector response and system thereof - A method and system for detecting light in accordance with other embodiments of the present invention includes providing at least one imaging sensor that detects a band of wavelengths. At least one layer of undoped quantum dots is optically coupled to the at least one imaging sensor. The at least one layer of undoped quantum dots absorbs at one or more wavelengths outside the band of wavelengths and outputs at least partially in the band of wavelengths.06-30-2011
20120056291IMAGING DEVICE, IMAGING MODULE AND METHOD FOR MANUFACTURING IMAGING DEVICE - According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.03-08-2012
20120056292SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD FOR A SEMICONDUCTOR PACKAGE AS WELL AS OPTICAL MODULE - A semiconductor package includes: a supporting substrate; a functioning element and a first joining element formed on a first principal surface of the supporting substrate; a sealing substrate disposed in an opposing relationship to the supporting substrate with the functioning element and the first joining element interposed therebetween; a second joining element provided on a second principal surface of the supporting substrate; a through-electrode provided in and extending through the supporting substrate and adapted to electrically connect the first and second joining elements; and a first electromagnetic shield film coated in an overall area of a side face of the supporting substrate which extends perpendicularly to the first and second principal surfaces.03-08-2012
20120056293SEMICONDUCTOR OPTICAL ELEMENT - A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.03-08-2012
20120056290THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK - A method of manufacturing a layer stack adapted for a thin-film solar cell and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer, wherein the depositing includes: providing for a first SiOx-containing anti-reflection layer by chemical vapor deposition. The method further includes depositing a first intrinsic-type layer and depositing a further conductive-type layer with a conductivity opposite to the first conductive-type layer.03-08-2012
20120007202Radiation-Receiving Semiconductor Component and Optoelectronic Device - A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 μm. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.01-12-2012
20120007200Image Sensor and Method for Manufacturing the Same - Disclosed is an image sensor including a photo-sensing device, a color filter positioned on the photo-sensing device, a microlens positioned on the color filter, and an insulation layer positioned between the photo-sensing device and the color filter, and including a trench exposing the photo-sensing device and a filler filled in the trench. The filler has light transmittance of about 85% or more at a visible ray region, and a higher refractive index than the insulation layer. A method of manufacturing the image sensor is also provided.01-12-2012
20080251870DETECTOR FOR DETECTING ELECTROMAGNETIC WAVES - A detector for detecting electromagnetic waves, the detector having an antenna for receiving the electromagnetic waves, a semiconductor element, wherein a termination section of the semiconductor element establishes a termination resistor of the antenna, wherein the termination section is provided for heating a temperature-sensitive part of the semiconductor element, wherein the semiconductor element comprises a temperature-dependent characteristic that is dependent from the temperature of the temperature sensitive part and a measurement unit for measuring the temperature-dependent characteristic of the semiconductor element.10-16-2008
20120007201MONOLITHIC PHOTODETECTOR - A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R01-12-2012
20080303108SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD FOR THE SAME - Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.12-11-2008
20120012962ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - An electronic device and a method of fabricating the same are provided. The electronic device includes: a photodiode layer; a wiring layer formed on the first surface of the photodiode layer; a plurality of electrical contact pads formed on the wiring layer; a passivation layer formed on the wiring layer and the electrical contact pads; an antireflective layer formed on the second surface of the photodiode layer; a color filter layer formed on the antireflective layer; a dielectric layer formed on the antireflective layer and the color filter layer; and a microlens layer formed on the dielectric layer, allowing the color filter layer, the dielectric layer and the microlens layer to define an active region within which the electrical contact pads are positioned. As the electrical contact pads are positioned within the active region, an area of the substrate used for an inactive region can be eliminated.01-19-2012
20120012961SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING OF SAME - A solid-state imaging device (01-19-2012
20120012960METHOD AND SYSTEM OF EMBEDDED MICROLENS - A method of making an embedded microlens includes providing a substrate having a photo-sensing region, forming a dielectric film overlying the substrate, forming a mask having a circular opening over the dielectric film, the opening being center-aligned over the photo-sensing region, and etching the dielectric film to form a cavity under the mask by introducing an isotropic etchant through the opening, the cavity being characterized by a truncated plano-convex shape having a flat circular bottom and curved peripheral sides convex towards the dielectric film. The method further includes removing the mask, depositing a lens material with a higher refractive index than that of the dielectric film to fill the cavity, planarizing the lens material to form the embedded microlens in the cavity having a smooth top surface, and forming a color filter layer overlying the microlens. The dielectric film includes silicon dioxide having a refractive index of 1.5 or less.01-19-2012
20120012959IMAGE SENSORS AND FABRICATION METHOD THEREOF - An image sensor is provided. The image sensor includes a pixel sensor, a color filter array comprising a plurality of color filters formed on the pixel sensor, wherein two adjacent color filters have a gap therebetween, and a gapless microlens array comprising a plurality of microlenses formed on the color filter array. The invention also provides a method for fabricating the image sensor.01-19-2012
20110049660WAVEGUIDE PHOTO-DETECTOR - Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.03-03-2011
20120104524Wiring Substrate, Imaging Device and Imaging Device Module - A imaging device includes a first insulating substrate having a through hole, a connection electrode and a first wiring conductor, a second insulating substrate having outside terminals and a second wiring conductor, and an imaging element including a light-receiving portion arranged at a center portion on an upper surface thereof and a connection terminal arranged at an outer peripheral portion thereof, at least one of the lower surface of the first insulating substrate and the upper surface of the second insulating substrate including a recess portion, the through hole being located on an inner side thereof, the imaging element being arranged below the first insulating substrate such that the light-receiving portion is located within the through hole, the connection terminal being electrically connected to the connection electrode, the imaging element being accommodated inside the recess portion, outer peripheral portions of the first insulating substrate and the second insulating substrate being electrically connected to each other.05-03-2012
20120104526IMAGER MODULE OPTICAL FOCUS AND ASSEMBLY METHOD - An imager apparatus and methods are described. An embodiment of an imager module includes a plurality of groups of optical lenses, a lens frame, and at least one associated lens barrel configured to position and hold the plurality of groups of optical lenses. At least one of the groups of optical lenses is movable with respect to at least one other group of optical lenses for achieving optical focus. The imager module includes an integrated circuit (IC) imager die in proximity to the plurality of lenses, the imager die containing at least one image capture microelectronic device.05-03-2012
20120061787LIQUID ELECTRICAL INTERCONNECT AND DEVICES USING SAME - Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device.03-15-2012
20120061786ISOLATED BOND PAD WITH CONDUCTIVE VIA INTERCONNECT - An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.03-15-2012
20120280343BACK-SIDE ILLUMINATION IMAGE SENSOR AND METHOD FOR FABRICATING BACK-SIDE ILLUMINATION IMAGE SENSOR - A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.11-08-2012
20110089514COLOR-OPTIMIZED IMAGE SENSOR - An image sensor pixel array includes a photoelectric conversion unit comprising a second region in a substrate and vertically below a gate electrode of a transistor. A first region under a top surface of the substrate and above the second region supports a channel of the transistor. A color filter transmits a light via a light guide, the gate electrode and the first region to generate carriers collected by the second region. The gate electrode may be made thinner by a wet etch. An etchant for thinning the gate electrode may be introduced through an opening in an insulating film on the substrate. The light guide may be formed in the opening after the thinning. An anti-reflection stack may be formed at a bottom of the opening prior to forming the light guide.04-21-2011
20120205765IMAGE SENSORS WITH STACKED PHOTO-DIODES - This describes color filter arrangements for image sensor arrays that are formed using image sensor pixels with stacked photo-diodes. The stacked photo-diodes may include first and second photo-diodes and may have the ability to separate color signal according to the depth of carrier generation in a silicon substrate. A single color filter may be formed over the stacked photo-diodes to provide full red-green-blue sensing capability. Charge drain regions may also be formed at different depths in the silicon substrate. If the charge drain regions are formed beneath the stacked photo-diodes in the substrate, full red-green-blue color sensing may be achieved without the use of color filters.08-16-2012
20120153419SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other.06-21-2012
20120153418SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes photodiodes provided in a substrate, and includes semiconductor regions of a first conductivity type, respectively, and an element isolation region provided in the substrate, includes a semiconductor region of a second conductivity type, and configured to electrically isolate the photodiodes from each other. The element isolation region is tilted in a direction of the center of an image area in which the photodiodes are arrayed.06-21-2012
20120153417Laser Power Converter for Data Detection and Optical-to-Electrical Power Generation - The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).06-21-2012
20110073972VERTICAL MIRROR IN A SILICON PHOTONIC CIRCUIT - A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.03-31-2011
20120104527SEMICONDUCTOR IMAGING INSTRUMENT AND MANUFACTURING METHOD THEREOF, AND CAMERA AND MANUFACTURING METHOD THEREOF - A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.05-03-2012
20090134484Image sensor with correcting lens and fabrication thereof - An image sensor with at least one correcting lens and a method for fabricating the same are described. The image sensor includes a substrate with an array of microlenses thereon and at least one correcting lens disposed over the substrate covering the microlens array. In the fabricating method, a substrate having formed with a microlens array thereon is provided, and then at least one correcting lens is disposed over the substrate covering the microlens array. The at least one correcting lens can, in use of the image sensor, shift the incident direction of light to a microlens in edge parts of the array of microlenses toward the normal line direction of the image sensor.05-28-2009
20090134483ELECTRONIC ASSEMBLY FOR IMAGE SENSOR DEVICE - An electronic assembly for an image sensor device is disclosed. The electronic assembly comprises a package module and a lens set mounted thereon. The package module comprises a device substrate comprising at least one grounding plug therein, in which the grounding plug is insulated from the device substrate and an array of optoelectronic devices therein. A transparent substrate comprises a dam portion attached to the device substrate to form a cavity between the device and transparent substrates. A micro-lens array is disposed within the cavity. A conductive layer is electrically connected to the grounding plug and covers the sidewalls of the lens set and the package module and the upper surface of the lens set. A method for fabricating the electronic assembly is also disclosed.05-28-2009
20120211849SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR LAMINATING SEMICONDUCTOR WAFERS, AND ELECTRONIC DEVICE - A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.08-23-2012
20120313202PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy n12-13-2012
20100289101IMAGE SENSOR - An image sensor including an array of pixels, wherein each pixel includes, in a vertical stack: a central photosensitive area; a stack of interconnects on top of the periphery of the photosensitive area, extending upwards up to a first height; a filtering layer on top of the photosensitive area, extending upwards from a height lower than the first height; and a microlens overlying the filtering layer in vertical projection, the optical axis of this microlens being such that the light rays received by the pixel reach the photosensitive area, substantially at its center.11-18-2010
20100289100SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.11-18-2010
20120126356PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device including a substrate, a photoelectric conversion element including a first electrode, a second electrode and an organic compound layer and a sealing member that are disposed in this order. When a cross section of the photoelectric conversion device in a thickness direction is observed with the sealing member being placed at an upper side, a bonding member seals the organic compound layer at an outside thereof. An output electrode on the sealing member has a protrusion. A side conductive portion is electrically connected with the protrusion in an up-and-down direction. A substrate conductive member electrically connected with the first electrode and the second electrode extends to an outside of the bonding member. An electrical connecting member electrically connects the side conductive portion to the substrate conductive member at a further outside of the bonding member.05-24-2012
20120126354Down-Converting And Detecting Photons - In certain embodiments, an apparatus for down-converting and detecting photons includes a detector layer and a nanocrystal layer. The nanocrystal layer includes nanocrystals operable to absorb first photons of a higher energy and emit second photons of a lower energy in response to the absorption. The detector layer is configured to detect the second photons. In certain embodiments, a method for manufacturing an apparatus for down-converting and detecting photons includes preparing an outer surface of a substrate. Nanocrystals are disposed outwardly from the outer surface. The nanocrystals are operable to absorb first photons of a higher energy and emit second photons of a lower energy in response to the absorption.05-24-2012
20110001207SOLID STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid state image sensor includes: a first pixel and a second pixel, each including a light receiving portion; a first color filter formed in an upper part of the first pixel on a first main surface side of a semiconductor substrate; a second color filter formed in an upper part of the second pixel on the first main surface side of the semiconductor substrate; a metal interconnect layer formed on a second main surface side of the semiconductor substrate; and a substrate contact connected to the second main surface of the semiconductor substrate, and provided between the metal interconnect layer and the second main surface. The first color filter mainly transmits first light therethrough, and the second color filter mainly transmits second light therethrough. The second light has a shorter wavelength than that of the first light. The substrate contact is not provided in the first pixel.01-06-2011
20110001205Image sensor and semiconductor device including the same - Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.01-06-2011
20120161269LOW-CROSSTALK FRONT-SIDE ILLUMINATED IMAGE SENSOR - A front-side illuminated image sensor, including photodetection regions, charge transfer elements, and an interconnection stack, all formed at the surface of a semiconductor substrate, microcavities being formed in the interconnection stack in front of the photodetection regions, microcavities being filled with materials forming color filters including metal pigments, regions of a material forming a barrier against ionic diffusion extending on the lateral walls of the microcavities.06-28-2012
20120133012COMPOSITE SYSTEM FOR PHOTOVOLTAIC MODULES - The present invention relates to a composite system for photovoltaic (PV) modules. The composite system consists of a carrier foil, a metal foil applied onto the carrier foil, and an insulating layer applied onto the metal foil. Using different connecting techniques, different photovoltaic (PV) cells can be fastened to the composite system and electrically interconnected thereby. In addition, the invention relates to a method for producing the composite system for PV modules, and to the use of the composite system for the back side contacting of wafer cells that have both contacts on the same side and that are placed, with the contacts, onto conductor structures that interconnect them into a module, and to the use of the composite system for modules of internally interconnected thin-film cells.05-31-2012
20100207223Optical device having light sensor employing horizontal electrical field - The optical device includes a waveguide and a light sensor on a base. The light sensor includes a light-absorbing medium configured to receive a light signal from the waveguide. The light sensor also includes field sources for generating an electrical field in the light-absorbing medium. The field sources are configured so the electrical field is substantially parallel to the base.08-19-2010
20100207226IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.08-19-2010
20120133011SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.05-31-2012
20120211850IMAGING ELEMENT, METHOD FOR MANUFACTURING IMAGING ELEMENT, PIXEL DESIGN METHOD, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion element and a light collecting part that collects incident light toward the light receiving part. Each of the light collecting parts in the plurality of pixels includes an optical functional layer having, in a surface, a specific projection and depression structure depending on the pixel position.08-23-2012
20110180891CONDUCTOR PACKAGE STRUCTURE AND METHOD OF THE SAME - The present invention provides a conductor package structure comprising an optical sensor element. A filling material is filled around the optical sensor element. At least one conductor element is formed through the filling material from top side to the back side for signal connection. A redistribution layer is formed on the at least one conductor element and coupled to die pad of the optical sensor element. A transparent material is formed on the redistribution layer.07-28-2011
20110180893IMAGING MODULE, FABRICATING METHOD THEREFOR, AND IMAGING DEVICE - An imaging module includes an imaging chip including a micro-lens guiding incident light and an imaging element in a semiconductor substrate and converting the incident light into an electric signal, and a polarizing glass chip including a polarizing filter glass having a polarizer determining a polarization direction of the incident light arranged on a transparent substrate such that the polarizer faces the micro-lens and a spacer member connected to the polarizing filter glass to adjust a gap between the polarizer and the micro-lens of the imaging chip. In the imaging module, a melt-bonding surface of the spacer member is melt-bonded to the semiconductor substrate such that the polarizer of the polarizing glass chip and the micro-lens of the imaging chip are arranged close to each other via the gap, and the imaging element and the micro-lens of the imaging chip are sealed by the polarizing glass chip.07-28-2011
20110180892SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor package and a method for manufacturing the same are provided. The semiconductor package includes a semiconductor chip having a first surface, a second surface and a pixel area, first adhesion patterns disposed on the first surface, second adhesion patterns disposed between the first adhesion patterns and the pixel area and disposed on the first surface, and external connection terminals disposed on the second surface, wherein the second adhesion patterns and the external connection terminals are disposed to overlap each other.07-28-2011
20120161270SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.06-28-2012
20120133010SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a through-hole formed in a semiconductor layer; a through-hole insulting layer formed on a sidewall of the through-hole to retract from a front surface of the semiconductor layer; a through-electrode embedded in the through-hole via the through-hole insulating layer; and a sidewall insulating film formed on a sidewall of the through-electrode to be embedded in a retracting section of the through-hole insulating layer.05-31-2012
20120313203SEMICONDUCTOR PACKAGE - A semiconductor package includes a wiring board, an electronic component mounted on the wiring board, and an enclosing frame arranged on an upper surface of the electronic component. The enclosing frame includes a basal portion, which has the form of a closed frame and extends along the upper surface of the electronic component, and an adhesion portion, which is wider than the basal portion and is arranged on the upper surface of the basal portion. A cap is adhered to an upper surface of the adhesion portion. A molding resin contacts a lower surface of the adhesion portion and seals the electronic component and the wiring board that are exposed from the enclosing frame.12-13-2012
20120313204Process Module for Increasing the Response of Backside Illuminated Photosensitive Imagers and Associated Methods - Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.12-13-2012
20120313206IMAGE SENSOR HAVING WAVEGUIDES FORMED IN COLOR FILTERS - An image sensor having an array of pixels disposed in a substrate. The array of pixels includes photosensitive elements, a color filters, and waveguide walls. The waveguide walls are disposed in the color filters and surround portions of the color filters to form waveguides through the color filters. In some embodiments, metal walls may be coupled to the waveguide walls.12-13-2012
20120313205Photosensitive Imagers Having Defined Textures for Light Trapping and Associated Methods - Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.12-13-2012
20120248561OPTICAL ELEMENT AND IMAGE SENSOR - An optical element includes a refractive index pattern that is periodically formed by a plurality of media having refractive indices different from each other. The highest diffraction order for a light beam of a first wavelength region that enters the optical element is greater than the highest diffraction order for a light beam of a second wavelength region that is longer than the first wavelength region, and the light beams of the first wavelength region and the second wavelength region are emitted so that each of the light beams of the first wavelength region and the second wavelength region is periodically localized.10-04-2012
20120248560Image Sensors - An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.10-04-2012
20120248559OPTICAL ELEMENT PRODUCING A MODULATED REGION OF DECREASED LIGHT INTENSITY AND OPTICALLY ENHANCED PHOTOVOLTAIC CELL INCLUDING THE SAME - An optical element has a plano-plano body formed of a first material having a greater refraction index n10-04-2012
20090057798Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus - There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.03-05-2009
20090057797Image Sensor and a Method for Manufacturing the Same - An image sensor and manufacturing method thereof are provided. An insulating layer having a wiring can be provided on a semiconductor substrate. A barrier wiring can be provided in the insulating layer between the wiring of a unit pixel and an adjacent wiring of an adjacent pixel. A device isolating pattern can be provided on the barrier wiring, and a lower electrode can be provided on the insulating layer and the wiring. A photodiode can be provided on the lower electrode, and an upper electrode can be provided on the photodiode.03-05-2009
20090057796PHOTODIODE BEING MONOLITHICALLY INTEGRATED ONTO A WAVEGUIDE - A waveguide-integrated photodiode for high bandwidths with a semi-insulating monomode supply waveguide monolithically integrated on a substrate, together with an overlying photodiode mesa structure having an electroconducting n-contact layer, an absorption layer, a p+-contact layer and a metallic p-contact, the refraction index of the n-contact layer being greater than the refraction index of the semi-insulating waveguide layer. Lengthening the n-contact layer by a predetermined length L in the direction of the supply waveguide in relation to the overlying layers correspondingly increases at least one factor of the product of quantum efficiency and bandwidth.03-05-2009
20120168888IMAGE SENSOR CIRCUIT, SYSTEM, AND METHOD - A process of forming optical sensors includes sealing an imaging portion of each of a plurality of optical sensors on a sensor wafer with a transparent material. The operation of sealing leaves a bonding portion of each of the optical sensors exposed. The process further includes cutting the wafer into a plurality of image sensor dies after sealing the optical sensors such that each image sensor die includes one of the optical sensors sealed with a corresponding portion of the transparent material.07-05-2012
20120168889MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - A manufacturing method of a solid-state imaging device includes: preparing a photoelectric conversion device; forming an insulating layer on a surface of the photoelectric conversion device; forming a wire-grid polarizer on a support base; bonding a forming surface of the wire-grid polarizer on the support base to the insulating layer on the surface of the photoelectric conversion device and removing the support base from the wire-grid polarizer.07-05-2012
20100052086ELECTRONIC DEVICE PACKAGES AND METHODS OF FABRICATING ELECTRONIC DEVICE PACKAGES - Electronic device packages comprise transparent substrates covering an active surface of an optically interactive electronic device. In some embodiments, the optically interactive electronic device is bonded to conductive traces formed directly on the transparent substrate. In other embodiments, a secondary substrate comprising a plurality of conductive traces is disposed between the transparent substrate and the optically interactive electronic device.03-04-2010
20100052084IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed are an image sensor employing an annealing process and a manufacturing method thereof. According to the method, in one embodiment, a transistor structure is formed over a semiconductor substrate, a metal interconnection layer is formed over the transistor structure, a protective layer is formed over the metal interconnection layer, a nitride layer is formed over the protective layer, and the semiconductor substrate formed with the nitride layer is subject to a high pressure annealing process.03-04-2010
20090096050Image Sensor and Method for Manufacturing the Same - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate including a unit pixel, first to third color filters provided on the semiconductor substrate, a first micro-lens provided on each of the first and third color filters, and a second micro-lens provided on the second color filter, in which an outer periphery of the first micro-lens has a square shape, and an upper portion of the first micro-lens has a semi-spherical or convex shape.04-16-2009
20090096049SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.04-16-2009
20090096048OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - An optical device includes a base and an optical element. The base has a through hole in a center and includes leads and a resin. Each lead has an L-shaped cross-section and is formed by an inner lead extending from the center toward a peripheral edge and an outer lead connected to the inner lead and extending downward. The optical element is provided under the base so as to correspond to the through hole. Electrode pads of the optical element are connected to the leads of the base through bumps, respectively. The resin is formed so as to cover respective inner ends of the leads and respective front surfaces of the inner leads and to fill a gap between adjacent leads, and respective outer ends of the leads and respective front surfaces of the outer leads are exposed.04-16-2009
20090096047IMAGING MODULE PACKAGE - An exemplary imaging module package includes a substrate, an imaging sensor chip set on the substrate, a housing positioned on the substrate, and a lens module. The housing includes a first chamber enclosing the imaging sensor chip therein, a second chamber coaxially extending from the first chamber for receiving the lens module therein, and a shoulder between the first and second chambers. The shoulder abuts against a top surface of the imaging sensor chip.04-16-2009
20120256284IMAGING DEVICE AND CAMERA MODULE - An imaging device includes: an optical sensor including a light receiving unit capable of forming an object image; a seal material for protecting the light receiving unit of the optical sensor; an intermediate layer formed at least between the light receiving unit and an opposite surface of the seal material facing the light receiving unit; and a control film arranged between the intermediate layer and the opposite surface of the seal material, wherein, in the control film, a cutoff wavelength is shifted to a shortwave side in accordance with an incident angle of light which is obliquely incident on the film.10-11-2012
20120256285SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a light-receiving element; and a multilayer film which is disposed on a side of a light-receiving surface of the light-receiving element and is formed by laminating a plurality of layers made of materials having different refractive indices, in which a defect layer is included in at least one of the laminated layers, wherein in the defect layer, a plurality of kinds of materials having different refractive indices coexist in a surface parallel to the light-receiving surface.10-11-2012
20120175720CMOS IMAGE SENSORS AND RELATED DEVICES AND FABRICATION METHODS - An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.07-12-2012
20120175719X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME - In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.07-12-2012
20100270637SOLID-STATE IMAGINING DEVICE - A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.10-28-2010
20120217600SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.08-30-2012
20100006964BACKSIDE ILLUMINATED IMAGE SENSOR HAVING BIASED CONDUCTIVE LAYER FOR INCREASED QUANTUM EFFICIENCY - A backside illuminated image sensor includes a sensor layer comprising a plurality of photosensitive elements of the pixel array, a circuit layer comprising circuitry associated with the pixel array, a conductive layer formed on a backside surface of the sensor layer, and one or more conductive contacts configured to couple the conductive layer to a bias source in the circuit layer. The biased conductive layer produces an electric field across the photosensitive elements of the pixel array that facilitates charge carrier collection and reduces crosstalk between adjacent photosensitive elements, thereby providing improved quantum efficiency in the image sensor. The image sensor may be implemented in a digital camera or other type of digital imaging device.01-14-2010
20120313201OPTICAL SENSOR DEVICES INCLUDING FRONT-END-OF-LINE (FEOL) OPTICAL FILTERS AND METHODS FOR FABRICATING OPTICAL SENSOR DEVICES - Optical sensor devices, and methods of manufacturing the same, are described herein. In an embodiment, a monolithic optical sensor device includes a semiconductor substrate having a trench, with a photodetector region under said trench. An optical filter is formed in the trench and over at least a portion of the photodetector region. One or more metal structures extend above a top surface of said optical filter. The trench, photodetector region and optical filter are formed as part of a front-end-of-line (FEOL) semiconductor fabrication process. The one or more metal structures are formed as part of a back-end-of-line (BEOL) semiconductor fabrication process.12-13-2012
20090001493ELECTRONIC IMAGING DEVICE - An electronic imaging device includes a base layer containing electrical functional circuitry, the base layer having a first side for interconnection of the circuitry and a second side which serves as a photo-detection side. The second side has exposed photosensitive electrical elements arranged in the base layer. Spacers of a predetermined height are provided adjacent to said second side. The spacers can advantageously be used for gaining control over the tolerance of a desired distance between a lens of a lens system and said photo-detection side. Thus, individual focusing of the lens system of each imager device after completion of production is no longer needed. Moreover, an air gap that improves the performance of the micro-lenses may be formed.01-01-2009
20080315341Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a passivation layer on a substrate having a pad area and a pixel area, a color filter layer on the passivation layer over the pixel area, a first low temperature oxide layer on the substrate including the color filter layer, and a low temperature oxide layer microlens on the first low temperature oxide layer. The low temperature oxide layer microlens can include a seed microlens and a second low temperature oxide layer on the seed microlens. The seed microlens can be formed from the first low temperature oxide layer.12-25-2008
20110121422SOLID-STATE IMAGE SENSOR - A solid-state image sensor having a configuration which reduces increases in light-collection loss and light mixing due to an increase in the angle of light entering into a waveguide path during oblique incidence and which is effective for sensitivity improvement includes: an Si substrate; unit-pixels arranged on the Si substrate; a wiring layer formed on the unit-pixels; optical waveguide regions each formed on a photoelectric conversion region included in a corresponding one of the unit-pixels, and penetrating the wiring layer; and light-collecting elements each formed above a corresponding one of the optical waveguide regions, wherein each of the light-collecting elements is a gradient index microlens having an effective refractive index distribution.05-26-2011
20110121421IMAGE SENSOR HAVING NONLINEAR RESPONSE - In previously known imaging devices as in still and motion cameras, for example, image sensor signal response typically is linear as a function of intensity of incident light. Desirably, however, akin to the response of the human eye, response is sought to be nonlinear and, more particularly, essentially logarithmic. Preferred nonlinearity is realized in image sensor devices of the invention upon severely limiting the number of pixel states, combined with clustering of pixels into what may be termed as super-pixels.05-26-2011
20110121420REVERSE IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME - A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a first surface and a second surface facing away from the first surface, photodiodes disposed on the first surface, and a wiring layer disposed on the second surface and having wiring lines electrically connected to the photodiodes and bonding pads electrically connected to the wiring lines. The second semiconductor chip includes a second semiconductor chip body having a third surface facing the wiring layer, and through-electrodes electrically connected to the bonding pads and passing through the second semiconductor chip body. The first insulation layer is disposed on the wiring layer, and the second insulation layer is disposed on the third surface of the second semiconductor chip body facing the first insulation layer and is joined to the first insulation layer.05-26-2011
20100327385SEMICONDUCTOR LIGHT-RECEIVING ELEMENT - The Si waveguide 12-30-2010
20100327384SOLID-STATE IMAGE DEVICE - Stacked filters are primary color filters and complementary color filters. Thus it is possible to suppress an increase in spectral characteristics and improve the color reproducibility of the primary color filters.12-30-2010
20100327382High Bandwidth, Monolithic Traveling Wave Photodiode Array - The monolithic application of a high speed TWPDA with impedance matching. Use of the high speed monolithic TWPDA will allow for more efficient transfer of optical signals within analog circuits and over distances.12-30-2010
20080296715Semiconductor device and optical device module having the same - In a solid-state imaging device 12-04-2008
20080296713Image Sensor with Color Filters and Method of Manufacturing the Same - An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO12-04-2008
20120261781SIDEWALL FOR BACKSIDE ILLUMINATED IMAGE SENSOR METAL GRID AND METHOD OF MANUFACTURING SAME - The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.10-18-2012
20120261780BACKSIDE-ILLUMINATED IMAGE SENSOR AND FABRICATING METHOD THEREOF - A backside-illuminated image sensor and a fabricating method thereof are provided. The fabricating method includes the following steps. Firstly, a first substrate having a first side and a second side is provided, wherein a sensing structure is formed on the first side of the first substrate, and the sensing structure includes an alignment mark. Then, a second substrate is provided and bonded to the first side of the first substrate. Then, a light-transmissible structure is formed on the second side of the first substrate at a location corresponding to the alignment mark. Afterwards, an optical structure is positioned on the second side of the first substrate by referring to the light-transmissible structure and the alignment mark.10-18-2012
20120261782SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME - The present invention provides a solid-state image pickup device that includes a plurality of photoelectric conversion units disposed in a semiconductor substrate, a first planarizing layer disposed at a first principal surface side of the semiconductor substrate where light enters, a color filter layer disposed on the first planarizing layer and including color filters each of which is provided for a corresponding photoelectric conversion unit, and a second planarizing layer disposed on the color filter layer for reducing a level difference between the color filters. In the solid-state image pickup device, a gap is disposed in a position corresponding to a boundary between the neighboring color filters in the color filter layer, the gap extending to the second planarizing layer, and a sealing layer for sealing the gap is disposed on the gap and the second planarizing layer.10-18-2012
20120299140SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND CAMERA MODULE - Certain embodiments provide a solid-state imaging device including a curved guide having a curved portion of a concave shape, a sensor substrate, an adhesive, a transparent substrate, and an external electrode. The sensor substrate includes a sensor section, for receiving light collected by a lens and generating charges in accordance with a light receiving quantity, on a surface, has the curved guide fixed on a back surface, and has a region including the sensor section curved downward to a convex shape along the curved portion of the curved guide. The adhesive is formed at a periphery of the sensor section. The transparent substrate is a plate-like substrate fixed on the sensor substrate by the adhesive. The external electrode is formed on the back surface of the sensor substrate, and is electrically connected to the sensor section through a through-electrode provided on the sensor substrate.11-29-2012
20120299139METHOD OF FABRICATION OF AN ARRAY OF GRADED REFRACTIVE INDEX MICROLENSES INTEGRATED IN A IMAGE SENSOR - Methods and devices that incorporate microlens arrays are disclosed. An image sensor includes a pixel layer and a dielectric layer. The pixel layer has a photodetector portion configured to convert light absorbed by the pixel layer into an electrical signal. The dielectric layer is formed on a surface of the pixel layer. The dielectric layer has a refractive index that varies along a length of the dielectric layer. A method for fabricating an image sensor includes forming an array of microlenses on a surface of the dielectric layer, emitting ions through the array of microlenses to implant the ions in the dielectric layer, and removing the array of microlenses from the surface of the dielectric layer.11-29-2012
20120299138Wafer Level Optical Packaging System, And Associated Method Of Aligning Optical Wafers - An optical system has a first relief-type diffraction grating fiducial, or alignment mark, on a transparent surface of a first optical wafer or plate, the grating arranged to deflect light away from an optical path and appear black. The first wafer may have lenses. The first fiducial is aligned to another fiducial on a second wafer having further optical devices as part of system assembly; or the fiducials are aligned to alignment marks or fiducials on an underlying photosensor. Once the optical devices are aligned and the wafers bonded, they are diced to provide aligned optical structures for a completed camera system. Alternatively, an optical wafer is made by aligning a second relief-type diffraction grating fiducial on a first master to a first relief-type diffraction grating fiducial on an optical wafer preform, pressing the first master into a blob to form optical shapes and adhere the blob to the optical wafer preform.11-29-2012
20110037134Solid-State Image Sensor Device - In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.02-17-2011
20110037133Semiconductor Photodetector Structure and the Fabrication Method Thereof - A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.02-17-2011
20120267739SOLID-STATE IMAGING DEVICE - There is employed a lamination structure of semiconductor substrate in which light receiving part having a photoelectric converting function is formed in an inner portion, and insulating films and wirings. There are provided a wiring layer formed above semiconductor substrate and having a concave portion formed in a place corresponding to a portion disposed above light receiving part, second insulating film having a higher refractive index than insulating films and covering a side surface of the wiring layer facing the concave portion, third insulating film having a lower refractive index than second insulating film and covering the side surface of second insulating film, and fourth insulating film having a higher refractive index than third insulating film and covering the side surface of third insulating film.10-25-2012
20120267742SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.10-25-2012
20120267744SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided semiconductor substrate, ground layer formed on semiconductor substrate and having an upper surface corresponding to pixel region, the upper surface being lower than an upper surface corresponding to peripheral circuit region, a plurality of color filters disposed two-dimensionally on the upper surface corresponding to pixel region in ground layer, and partition wall provided between color filters. In a section which is orthogonal to the upper surface corresponding to pixel region in ground layer, an occupied area of partition wall provided in outer portion disposed in contact with peripheral circuit region is smaller than that of partition wall provided in central portion of pixel region.10-25-2012
20120267741SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device includes: a light receiving portion formed on a semiconductor substrate; a multilayer structure formed on the semiconductor substrate, that includes an interlayer insulating film and a first concave portion at a position corresponding to the light receiving portion; and an optical waveguide formed in the first concave portion. The optical waveguide includes a first film and a second film formed sequentially from a side of the multilayer structure. The first film covers a side face and a bottom face of the first concave portion and includes a second concave portion. The second film is in contact with the first film and fills up the second concave portion. The thickness of the first film formed on the side face of the first concave portion is thinner at a top portion of the first concave portion than at the bottom portion thereof.10-25-2012
20120267743SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.10-25-2012
20120267745SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device includes a semiconductor substrate having a photodiode formed therein, and a lamination structure of an insulating film and a wiring. The solid-state imaging device includes a partition wall formed on a wiring layer, constituted by an inorganic material and formed in a portion corresponding to a portion provided between the adjacent photodiodes, and a color filter constituted by an organic material and formed between the adjacent partition walls. The solid-state imaging device includes an adhesion layer constituted by an organic material and formed between a side surface of the partition wall and the color filter. An adhesive property of the adhesion layer to the color filter is higher than that of the partition wall to the color filter, and an adhesive property of the adhesion layer to the partition wall is higher than an adhesive property of the color filter to the partition wall.10-25-2012
20120267740SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.10-25-2012
20120319223DIFFUSE OMNI-DIRECTIONAL BACK REFLECTORS AND METHODS OF MANUFACTURING THE SAME - Ultra-high reflectivity is projected for internal reflectors comprised of a metal film and nanostructured transparent conductive oxide (TCO) bi-layer on the back side of a semiconductor device. Oblique-angle deposition can be used to fabricate indium tin oxide (ITO) and other TCO optical thin-film coatings with a porous, columnar nanostructure. The resulting low-n dielectric films can then be employed as part of a conductive omni-directional reflector (ODR) structure capable of achieving high internal reflectivity over a broad spectrum of wavelengths and a wide range of angles. In addition, the dimensions and geometry of the nanostructured, low-n TCO films can be adjusted to enable diffuse reflections via Mie scattering. Diffuse ODR structures enhance the performance of light trapping and light guiding structures in photonic devices.12-20-2012
20120319222SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING POLARIZING ELEMENT - The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element. The solid-state imaging device includes a plurality of solid-state imaging elements 12-20-2012
20110227181PHOTOELECTRIC CONVERSION FILM-STACKED SOLID-STATE IMAGING DEVICE WITHOUT MICROLENSES, ITS MANUFACTURING METHOD, AND IMAGING APPARATUS - There are provided a circuit board; a semiconductor substrate bonded to a light-incidence-side surface of the circuit board; a photoelectric conversion film stacked on a layer that is disposed on the light incidence side of the semiconductor substrate; an imaging device chip having signal reading means which is formed in a surface portion of the semiconductor substrate, for reading out, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film according to incident light quantities; a transparent substrate bonded to a layer that is disposed on the light incidence side of the photoelectric conversion film with a transparent resin adhesive; and bonding wires which connect connection pads formed on a peripheral portion, not covered with the transparent substrate, of the semiconductor substrate to connection terminals on the circuit board.09-22-2011
20120080765METHOD OF DAMAGE-FREE IMPURITY DOPING FOR CMOS IMAGE SENSORS - A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.04-05-2012
20100224948SOLID-STATE IMAGING ELEMENT, METHOD FOR FABRICATING THE SAME, AND SOLID-STATE IMAGING DEVICE - A solid-state imaging element includes a semiconductor substrate formed with a valid pixel section including a plurality of photodetector sections, spacers formed on the valid pixel section, a transparent adhesive filling gaps among the spacers, and a transparent substrate which is bonded onto the spacers using the transparent adhesive and covers the valid pixel section when viewed in plan. Electrode pad sections are formed in a region of the semiconductor substrate located outside the valid pixel section.09-09-2010
20120280345PHOTODETECTOR AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate, a waveguide formed on a surface of the substrate, a first metal layer formed on a first side of the waveguide, wherein a first interface is defined between the waveguide and the first metal layer, and a silicide layer formed on a second side of the waveguide, wherein a second interface is defined between the waveguide and the silicide layer, and wherein the second side is opposite to the first side, and wherein at least one of the first interface and the second interface is at least substantially perpendicular to the surface of the substrate. Various embodiments further provide a method of forming the photodetector.11-08-2012
20120280344Wafer Scale Packaging Platform For Transceivers - A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules.11-08-2012
20120280346SENSOR STRUCTURE FOR OPTICAL PERFORMANCE ENHANCEMENT - The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.11-08-2012
20120280347WAVEGUIDE PHOTO-DETECTOR - Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.11-08-2012
20110298072RIDGE STRUCTURE FOR BACK SIDE ILLUMINATED IMAGE SENSOR - Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.12-08-2011
20120326257PHOTOELECTRIC CONVERSION LAYER STACK-TYPE SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A photoelectric conversion layer stack-type solid-state imaging device includes a semiconductor substrate, a photoelectric conversion portion, a conductive light shield film, and a dielectric layer. A signal reading portion is formed on a semiconductor substrate. The photoelectric conversion portion is stacked above a light incidence side of the semiconductor substrate and includes a photoelectric conversion layer formed between a first electrode film and a second electrode film which is divided into a plurality of regions corresponding to pixels respectively. The conductive light shield film is stacked above the light incidence side of the photoelectric conversion portion outside an effective pixel region. The dielectric layer is disposed between the conductive light shield and the first electrode film. A given voltage is applied to the first electrode film through a lowpass filter formed by a resistance of wiring to the first electrode film and a capacitor formed between the conductive light shield film and the first electrode film.12-27-2012
20120326256SPECTRALLY TUNED PLASMONIC LIGHT COLLECTORS - Electronic devices may be provided with imaging modules that include plasmonic light collectors. Plasmonic light collectors may be configured to exploit an interaction between incoming light and plasmons in the plasmonic light collector to alter the path of the incoming light. Plasmonic light collectors may include one or more spectrally tuned plasmonic image pixels configured to preferentially trap light of a given frequency. Spectrally tuned plasmonic image pixels may include plasmonic structures formed form a patterned metal layer over doped silicon layers. Doped silicon layers may be interposed between plasmonic structures and a reflective layer. Plasmonic image pixels may be used to absorb and detect as much as, or more than, ninety percent of incident light at wavelengths ranging from the infrared to the ultraviolet. Plasmonic image pixels that capture light of different colors may be arranged in patterned arrays to form imager modules or imaging spectrometers for optofluidic microscopes.12-27-2012
20120091552OPTICAL DEVICES BASED ON NON-PERIODIC SUB-WAVELENGTH GRATINGS - Various embodiments of the present invention are directed to optical devices comprising planar lenses. In one aspect, an optical device includes two or more planar lenses (04-19-2012
20120091551METHOD OF MANUFACTURING A MULTITUDE OF MICRO-OPTOELECTRONIC DEVICES, AND MICRO-OPTOELECTRONIC DEVICE - A wafer stack that is diced to produce a multitude of micro-optoelectronic devices includes a first wafer including a semiconductor material; a second wafer including an optically transparent material; a multitude of light sensor arrangements in the semiconductor material of the first wafer for each of the micro-optical devices; the second wafer structured to form a multitude of micro-optical elements therein for each of the micro-optoelectronic devices; and a wafer stack produced wafer bonding, the wafer stack including the first wafer and the second wafer arranged above same, each of the micro-optical elements arranged and structured such that different portions of light incident on the micro-optical element are directed onto different light sensor elements of a light sensor arrangement at least partly arranged below the micro-optical element.04-19-2012
20120091550SPECTROSCOPY AND SPECTRAL IMAGING METHODS AND APPARATUS - The invention pertains to a new type of standing wave filter in which the detector is located within the cavity, rather than outside the cavity and methods of manufacturing such a filter.04-19-2012
20120091549FORMATION OF EMBEDDED MICRO-LENS - Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.04-19-2012
20120286385SEMICONDUCTOR DEVICE, CAMERA MODULE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device is provided which has a semiconductor element having an element forming surface at which a sensor element is formed, a back surface on the opposite side of the element forming surface, and a light transmissive protective member laminated over the element forming surface via an adhering portion. The semiconductor device includes a region exposed from the protective member at the outer peripheral end portion of the semiconductor element, when viewed from the protecting member in a laminating direction.11-15-2012
20120286384SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SOLID-STATE IMAGING DEVICE - A semiconductor package includes: a sheet-like thin plate on which a semiconductor chip is secured; and a substrate including a wiring layer, disposed on the thin plate to extend over a part of a region surrounding the region where the semiconductor chip is secured or over the entire surrounding region, wherein the semiconductor chip and the substrate are electrically connected.11-15-2012
20120286386SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DESIGNING METHOD - A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.11-15-2012
20130009263SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions.01-10-2013
20130015545SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUSAANM Toumiya; YoshinoriAACI KumamotoAACO JPAAGP Toumiya; Yoshinori Kumamoto JPAANM Ootsuka; YoichiAACI KumamotoAACO JPAAGP Ootsuka; Yoichi Kumamoto JPAANM Maeda; KensakuAACI KanagawaAACO JPAAGP Maeda; Kensaku Kanagawa JP - A solid-state imaging device includes: a substrate on which plural pixels having photoelectric converters are formed; an inorganic microlens made of an inorganic material and formed above the substrate, and an organic microlens made of an organic material and formed adjacent to the inorganic microlens so that a hem portion touches or overlaps a hem portion of the inorganic microlens.01-17-2013
20130015546MULTI-LAYER PHOTOELECTRIC INTEGRATED CIRCUIT DEVICE WITH OVERLAPPING DEVICESAANM Joe; In-sungAACI SeoulAACO KRAAGP Joe; In-sung Seoul KRAANM Suh; Sung-dongAACI SeoulAACO KRAAGP Suh; Sung-dong Seoul KRAANM Na; Kyoung-wonAACI SeoulAACO KRAAGP Na; Kyoung-won Seoul KRAANM Ha; Kyoung-hoAACI SeoulAACO KRAAGP Ha; Kyoung-ho Seoul KRAANM Kim; Seong-guAACI Pyeongtaek-siAACO KRAAGP Kim; Seong-gu Pyeongtaek-si KRAANM Shin; Young-hwackAACI Yeonsu-guAACO KRAAGP Shin; Young-hwack Yeonsu-gu KR - An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at least one photo device and/or the at least one electronic device of the first one of the device layers.01-17-2013
20130020668Optical device having light sensor with doped regions - The optical device includes a waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The sensor waveguide receives the light signal from the input waveguide. Additionally, the sensor waveguide includes a light-absorbing medium having an input side. The input side is interfaced with the light-transmitting medium such that at least a portion of the light signal received by the sensor waveguide travels through the input side of the light-absorbing medium upon being received by the sensor waveguide. The light-absorbing medium includes doped regions. One or more of the doped regions each extends from within the light-absorbing medium to the input side of the light-absorbing medium.01-24-2013
20130020667SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.01-24-2013
20130020666DIRECT READOUT FOCAL PLANE ARRAY - According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.01-24-2013
20130020664Application of electrical field power to light-transmitting medium - A device includes an input waveguide on a base. The input waveguide guides a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The device also includes a sensor waveguide on the base. The sensor waveguide includes a light-absorbing medium that receives the light signal from the input waveguide. The light-absorbing medium has one or more continuous doped regions that are each positioned such that an application of electrical energy to the doped regions forms an electrical field in the light-absorbing medium. One or more of the doped regions has a first portion that is located within the light-absorbing medium and a second portion located outside of the light-absorbing medium. The device also includes an electrical conductor for applying the electrical energy to one of the doped regions. The electrical conductor contacts the portion of the doped regions that is located outside of the light-absorbing medium.01-24-2013
20130020665Low Stress Cavity Package For Back Side Illuminated Image Sensor, And Method Of Making Same - An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the first surface. A compliant dielectric material is disposed in the cavity. The image sensor front surface is attached to the crystalline substrate handler second surface. A plurality of electrical interconnects each include a hole aligned with one of the contact pads, with a first portion extending from the second surface to the cavity and a second portion extending through the compliant dielectric material, a layer of insulation material formed along a sidewall of the first portion of the hole, and conductive material extending through the first and second portions of the hole and electrically coupled to the one contact pad.01-24-2013
20120241892SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - In a method for manufacturing a semiconductor device according to an embodiment, a trench is formed in an outer peripheral portion of a chip region on a bonding surface of a support substrate, and a semiconductor substrate having a chip ring in the outer peripheral portions of the chip regions on an inside of a dicing line respectively and the support substrate are bonded to position the trench from above the chip ring to the inside of the dicing line. In the method for manufacturing a semiconductor device, furthermore, the semiconductor substrate and the support substrate which are bonded to each other are subjected to dicing along the dicing line.09-27-2012
20120241891WIDE FIELD OF VIEW OPTICAL RECEIVER - Techniques are disclosed for creating optical systems and assemblies that provide increased field of view (FOV) for light detection by coupling a flip-chip light sensor directly to a condenser lens. According to certain embodiments of the invention, an optical assembly can include a condenser lens with a substantially flat surface optically contacted with a substantially flat surface of a substrate of a flip-chip light sensor. The thickness of the substrate is such that the active area of the light sensor is disposed on a focal plane of the optical system. This enables accurate light detection and increased FOV over conventional techniques.09-27-2012
20080251869PHOTOSENSITIVE CHIP PACKAGE - A photosensitive chip package includes a substrate on which a photosensitive chip having a photo-active zone and a photo-inactive zone surrounding the photo-active zone is bonded. A light-transmissive film covers the photo-active zone of the photosensitive chip. Bonding wires are electrically connected with the photosensitive chip and the substrate. An encapsulant covers the photo-inactive zone of the photosensitive chip, a border periphery of the light-transmissive film and the bonding wires. The encapsulant has an opening corresponding to the photo-active zone. By means of the light-transmissive film, the photo-active zone of the photosensitive chip is protected, thereby lowering the chance of accidental damage to the photosensitive chip by the tool used during formation of the encapsulant and/or during a cleaning work.10-16-2008
20080237763ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS - The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.10-02-2008
20080237761SYSTEM AND METHOD FOR ENHANCING LIGHT SENSITIVITY FOR BACKSIDE ILLUMINATION IMAGE SENSOR - A system and method for enhancing light sensitivity of a back-side illumination image sensor are described. An integrated circuit includes a substrate and an image sensor device comprising at least one transistor formed over a first surface of the substrate and a photosensitive region. A color filter is disposed over a second surface of the substrate opposite the first surface thereof. A micro-lens structure is disposed between the second surface of the substrate and the color filter.10-02-2008
20130168791Quantum Efficiency Back Side Illuminated CMOS Image Sensor And Package, And Method Of Making Same - An image sensor device (and method of making same) that includes a substrate with front and back opposing surfaces, a plurality of photo detectors formed at the front surface, and a plurality of contact pads formed at the front surface which are electrically coupled to the photo detectors. A cavity is formed into the back surface. A plurality of secondary cavities are formed into a bottom surface of the cavity such that each secondary cavity is disposed over one of the photo detectors. Absorption compensation material having light absorption characteristics that differ from those of the substrate is disposed in the secondary cavities. A plurality of color filters are each disposed in the cavity or in one of the secondary cavities and over one of the photo detectors. The plurality of photo detectors are configured to produce electronic signals in response to light incident through the color filters.07-04-2013
20130168792Three Dimensional Architecture Semiconductor Devices and Associated Methods - Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.07-04-2013
20130140663IMAGE SENSOR AND IMAGE CAPTURE APPARATUS - An image sensor in which each pixel includes a first sub-pixel including a first semiconductor layer, a second sub-pixel including a second semiconductor layer having a polarity different from a polarity of the first semiconductor layer, a third semiconductor layer having a polarity equal to the polarity of the first semiconductor layer, and a microlens, and which includes a plurality of pixels in which the first semiconductor is included in the second semiconductor layer, and the second semiconductor layer is included in the third semiconductor layer, wherein a center of gravity position of a light-receiving surface defining the first semiconductor layer is different from a center of gravity position of a light-receiving surface defining both the first semiconductor layer and the second semiconductor layer.06-06-2013
20080224247BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS - A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate.09-18-2008
20080224246Image Sensor and Method for Fabricating the Same - An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.09-18-2008
20080224245IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor including an interlayer dielectric layer formed over a semiconductor substrate, a color filter layer formed over the interlayer dielectric layer, a planarization layer formed over the color filter, and a microlens array having a gapless, continuous shape and a multilayered structure formed over the planarization layer.09-18-2008
20080224244IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor include an interlayer dielectric layer formed over a semiconductor substrate; a color filter array formed over the interlayer dielectric layer; a planarization layer formed over the color filter; and a microlens array having a continuous, gapless shape formed over the planarization layer and spatially corresponding to the color filter array. The microlens array is composed of a first dielectric layer and a second dielectric layer formed over the first dielectric layer.09-18-2008
20080224243Image Sensor and Method of Manufacturing the Same - An image sensor is provided. The image sensor can include a semiconductor substrate including a circuit region, an interlayer electric including a metal interconnection on the semiconductor substrate, a lower electrode on the metal interconnection, and a light receiving portion on the lower electrode. The light receiving portion can be a PIN diode formed to have a convex shape.09-18-2008
20130175648PHOTOVOLTAIC DEVICE - A photovoltaic device including a semiconductor substrate having a first surface and a second surface, the second surface being opposite to the first surface; a first passivation layer on the first surface; and a second passivation layer on the second surface, wherein each of the first passivation layer and the second passivation layer comprises an aluminum-based compound, is disclosed. A method of preparing a photovoltaic device, the method including: forming a semiconductor substrate to have a first surface and a second surface, the second surface being opposite to the first surface; forming an emitter region and a back surface field (BSF) region at the second surface; and forming a first passivation layer on the first surface and a second passivation layer on the second surface, wherein the first passivation layer and the second passivation layer are formed concurrently, is also disclosed.07-11-2013
20130181310SEMICONDUCTOR APPARATUS AND IMAGE SENSOR PACKAGE USING THE SAME - A semiconductor apparatus and an image sensor package. The image sensor package includes a semiconductor apparatus including a body having a first surface and a second surface which face each other, a first trench formed in the first surface of the body, a second trench formed in the second surface of the body, a third trench formed in a bottom surface of the second trench, and an aperture connecting the first trench to the third trench, a transparent member placed in the third trench and covering the aperture, a mounting board placed under the second surface of the body, and an image sensor chip placed between the mounting board and the transparent member and surrounded by the second trench.07-18-2013
20130181311IMAGE SENSOR UNIT, IMAGE READING APPARATUS, IMAGE FORMING APPARATUS, AND MANUFACTURING METHOD - An image sensor unit includes: sensor substrates on which a plurality of sensor chips are mounted; rod-lens arrays that focus light from an original on the sensor substrates; and a frame body that houses the plurality of sensor substrates and the plurality of rod-lens arrays. The frame body is divided into a first frame and a second frame. A side surface of the rod-lens array in a sub-scan direction is fixed only by the first frame, and the plurality of rod-lens arrays are arranged in the main-scan direction.07-18-2013
20130181312SURFACE PASSIVATION BY QUANTUM EXCLUSION USING MULTIPLE LAYERS - A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×1007-18-2013
20080217714SEMICONDUCTOR DEVICE HAVING TILES FOR DUAL-TRENCH INTEGRATION AND METHOD THEREFOR - A method for forming a semiconductor device includes providing a semiconductor substrate having a first region and a second region. The first region has one or more first elements and the second region has one or more second elements. The first elements are different from the second elements. A tile location and a first tile surface area for a tile feature on the semiconductor device is defined. An active semiconductor layer is formed over both the first region and the second region of the semiconductor substrate. A first trench is formed in the active semiconductor layer at the tile location using a negative tone mask. The first trench has a first depth and forms at least a portion of the tile feature. A second trench is formed in the active semiconductor layer using a positive tone mask. The second trench has a second depth different than the first depth.09-11-2008
20090200628REDUCED IMAGER CROSSTALK AND PIXEL NOISE USING EXTENDED BURIED CONTACTS - Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor portion of the pixel. The section of the buried-contact layer covering the photosensor portion of the pixel serves to filter the light striking the buried-contact layer before the light strikes the photosensor. The polysilicon light filter reduces the amount of stray light entering from the adjacent pixels without adding significant processing complexity.08-13-2009
20130093036METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR - Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.04-18-2013
20130093034SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - According to one embodiment, there is provided a solid-state imaging device including a first photoelectric conversion layer and a color filter. The color filter includes a multi-layer interference filter and a guided mode resonant grating. The guided mode resonant grating includes a plurality of diffraction gratings and a plurality of inter-grating regions. The plurality of diffraction gratings are formed of a material having a first index of refraction and periodically arrayed at least one-dimensionally. The plurality of inter-grating regions are arranged between at least the plurality of diffraction gratings. Each of the plurality of inter-grating regions includes an insulating film region and an air gap region. The insulating film region is formed of a material having a second index of refraction lower than the first index of refraction.04-18-2013
20130093033THREE DIMENSIONAL STRUCTURES HAVING IMPROVED ALIGNMENTS BETWEEN LAYERS OF MICROCOMPONENTS - The invention relates to a method of initiating molecular bonding, comprising bringing one face (04-18-2013
20130093035PHOTO DETECTOR AND INTEGRATED CIRCUIT - The photo detector (04-18-2013
20130113061IMAGE SENSOR TRENCH ISOLATION WITH CONFORMAL DOPING - Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.05-09-2013
20130113063HIGH BANDWIDTH, MONOLITHIC TRAVELING WAVE PHOTODIODE ARRAY - The monolithic application of a high speed TWPDA with impedance matching. Use of the high speed monolithic TWPDA will allow for more efficient transfer of optical signals within analog circuits and over distances.05-09-2013
20130113064PHOTODETECTOR, OPTICAL COMMUNICATION DEVICE EQUIPPED WITH THE SAME, METHOD FOR MAKING OF PHOTODETECTOR, AND METHOD FOR MAKING OF OPTICAL COMMUNICATION DEVICE - The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged on the substrate, an optical waveguide arranged on the lower cladding layer, an intermediate layer arranged on the optical waveguide, a optical absorption layer arranged on the intermediate layer, a pair of electrodes arranged on the optical absorption layer, and wherein the optical absorption layer includes a IV-group or III-V-group single-crystal semiconductor, and the optical absorption layer absorbs an optical signal propagating through the optical waveguide.05-09-2013
20130099342LATERAL COLLECTION PHOTOVOLTAICS - A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode.04-25-2013
20130099343SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of pixel cells; and column signal lines. Each of the pixel cells includes: a photoelectric conversion film, a pixel electrode, a transparent electrode, an amplifier transistor, a reset transistor, and an address transistor. The solid-state imaging device further includes: a lower-refractive-index transparent layer formed above the transparent electrode; and higher-refractive-index transparent parts embedded in the lower-refractive-index transparent layer and each having a refractive index higher than a refractive index of the lower-refractive-index transparent layer. Each of the higher-refractive-index transparent parts separates light passing through the higher-refractive-index transparent part into zero-order diffracted light, first-order diffracted light, and negative-first-order diffracted light which exit the higher-refractive-index transparent part and travel toward the photoelectric conversion film.04-25-2013
20130099341IMAGE SENSOR FOR STABILIZING A BLACK LEVEL - An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.04-25-2013
20130113062Lens Holder, Method for Manufacturing the Same and Image Capturing Device Thereof - A lens holder, a method for manufacturing the same and an image capturing device thereof. The lens holder comprises a hollow substrate, a filter, a hollow elastomer and a photodetector module. The hollow substrate comprises a photodetector accommodating space and a plurality of fixing mechanisms disposed around the photodetector accommodating space. The filter is disposed inside the photodetector accommodating space and covers a hollow section of the hollow substrate. The hollow elastomer is disposed on the filter. The photodetector module is disposed on the hollow elastomer and comprises a photodetector and a substrate. The substrate can be fixed onto the hollow substrate through the plurality of fixing mechanisms. Wherein, a plurality of protrusion parts extends from the hollow elastomer for holding the substrate. The aforementioned lens holder structure can be used to perform a tilt alignment of the photodetector efficiently.05-09-2013
20130187249STRUCTURES AND DESIGN STRUCTURES FOR IMPROVED ADHESION OF PROTECTIVE LAYERS OF IMAGER MICROLENS STRUCTURES - Structures and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.07-25-2013
20130127002SOLID STATE IMAGING DEVICE - A CCD image sensor, being a solid state imaging device, has four types of pixels, first to fourth pixels. The first to fourth pixels are arranged in a predetermined pattern. Each of the pixels has a PD and a microlens. Each of the microlens is arranged with its optical axis center eccentric or shifted in a predetermined direction from a center of a light receiving surface of the PD. A part of the microlens overlaps one or more adjacent pixels.05-23-2013
20130127001SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A semiconductor package is provided, including a silicon-containing substrate, a photo-sensor chip disposed on the silicon-containing substrate, a plurality of conductive lines electrically connected to the silicon-containing substrate and the photo-sensor chip, an encapsulating layer encapsulating the photo-sensor chip and the conductive lines, and a colloid lens disposed on the encapsulating layer. With the photo-sensor chip stacked on the silicon-containing substrate, a circuit board may have a reduced region that is occupied by the semiconductor package. A method of fabricating the semiconductor package is also provided.05-23-2013
20110272771THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THIN FILM PHOTOELECTRIC CONVERSION DEVICE - A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided. A plasmon resonance phenomenon, which enhances a photo-induced electric field, is caused in a wide range of light, by a metal nanostructure which is formed by annealing a substrate on which a first metal thin film layer composed of a first metal and a second metal thin film layer composed of a second metal which is partially overlapped onto the first metal thin film layer are laminated, and in which a periodic structure, wherein a number of first convex parts successively lie with a pitch of from one-tenth of a wavelength of an incident light to a wavelength equal to or shorter than the wavelength of the incident light in a planar direction along the substrate, is formed on the surface of the substrate; and a random structure, wherein a distance between any pair of a number of second convex parts formed at random positions on the substrate, or a distance between a second convex part and a first convex part is shorter than 100 nm, is formed on the substrate in a position within a region of the periodic structure or in a position adjacent to the region of the periodic structure, and as a result, high sensitivity photo-induced current is generated.11-10-2011
20110272772SOLID STATE IMAGING DEVICE - A solid state imaging device includes: a first photoelectric conversion layer of an organic material; a second photoelectric conversion layer of an inorganic material; a third photoelectric conversion layer of an inorganic material; a first filter of an inorganic material; a second filter of an inorganic material. The first photoelectric conversion layer photoelectrically-converts a light of a first color. The first filter is disposed between the first photoelectric conversion layer and the second photoelectric conversion layer to selectively guide a light of a second color, out of a light that passed through the first photoelectric conversion layer, to the second photoelectric conversion layer. The second filter being disposed between the first photoelectric conversion layer and the third photoelectric conversion layer to selectively guide a light of a third color, out of the light that passed through the first photoelectric conversion layer, to the third photoelectric conversion layer.11-10-2011
20130146999METHOD FOR FORMING A SELECTIVE CONTACT - A method for forming a selective contact for a photovoltaic cell is disclosed. The method includes forming a doped contact layer at the surface of a semiconductor substrate and annealing a portion of the doped contact layer with a laser beam, the portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid. Wherein the laser beam is pulsed and shaped to the 2D-pattern. A photovoltaic cell having a selective contact formed by the method is also provided.06-13-2013
20130147000WAFER SCALE IMAGE SENSOR PACKAGE AND OPTICAL MECHANISM INCLUDING THE SAME - There is provided an optical mechanism including a substrate, an image sensor chip, a light source, a blocking member and a securing member. The image sensor chip is attached to the substrate and has an active area. The light source is attached to the substrate. The blocking member covers the image sensor chip and has an opening to expose at least the active area of the image sensor chip. The securing member fits on the blocking member to secure the blocking member to the substrate.06-13-2013
20130147001WAFER SCALE IMAGE SENSOR PACKAGE AND OPTICAL MECHANISM - There is provided an optical mechanism including a substrate, an image chip, a light source and a securing member. The image chip and the light source are attached to the substrate. The securing member is secured to the substrate and includes a first containing space for accommodating the light source, a second containing space for accommodating the image chip and a blocking region between the first containing space and the second containing space.06-13-2013
20130175649Sensor - An apparatus including: a transparent substrate including a first surface and an opposing second surface; a sensor connected to the first surface of the transparent substrate; and a casing, including interconnects to the sensor, and defining a cavity and at least one aperture to the cavity, wherein the transparent substrate and the sensor are located within the cavity with the second surface of the transparent substrate adjacent the at least one aperture.07-11-2013
20080197436ELECTRONIC DEVICE, METHOD FOR MANUFACTURING THE SAME, AND SILICON SUBSTRATE FOR ELECTRONIC DEVICE - An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.08-21-2008
20080197435Wafer level image sensor package with die receiving cavity and method of making the same - The present invention provides a structure of package comprising a substrate with a die receiving cavity formed within an upper layer of the substrate, wherein terminal pads are formed on the upper surface of the substrate, the same plain as the micro lens. A die is disposed within the die receiving cavity by adhesion and a dielectric layer formed on the die and the substrate. A re-distribution metal layer (RDL) is formed on the dielectric layer and coupled to the die. An opening is formed within the dielectric layer and a top protection layer to expose the micro lens area of the die for Image Sensor chip. A protection layer (film) be coated on the micro lens area with water repellent and oil repellent to away the particle contamination. A transparent cover with coated IR filter is optionally formed over the micron lens area for protection.08-21-2008
20110221022OPTICAL MEMBER, SOLID-STATE IMAGING DEVICE, AND MANUFACTURING METHOD - An optical member including high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light.09-15-2011
20110221021Solid state image pickup device and method of producing solid state image pickup device - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.09-15-2011
20110221019Silicon-Based Schottky Barrier Detector With Improved Responsivity - A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.09-15-2011
20110221018Electronic Device Package and Methods of Manufacturing an Electronic Device Package - An electronic device package comprises a substrate 09-15-2011
20130147002RECEIVER MODULE AND DEVICE - Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting.06-13-2013
20100308427IMAGE SENSORS WITH LIGHT GUIDES - An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.12-09-2010
20120273911PHOTOELECTRIC TRANSDUCER - A photoelectric transducer (11-01-2012
20120273910PHOTODETECTOR, IMAGE SENSOR AND METHOD FOR MANUFACTURING - The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.11-01-2012
20120273909SEMICONDUCTOR LIGHT-RECEIVING DEVICE - A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.11-01-2012
20120273908STACKED SENSOR PACKAGING STRUCTURE AND METHOD - Disclosed herein is a stacked chip package including an image sensor including a recess formed on a surface thereof, and a digital signal processor chip that is positioned within the recess. Also disclosed herein is a method of fabricating a stacked chip package including the steps of forming a recess on a surface of an image sensor and positioning a digital signal processor in the recess of the image sensor.11-01-2012
20120273907IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes: a substrate having a plurality of unit pixel region; a light receiving element formed in the substrate at the unit pixel region; an interlayer dielectric layer formed over the substrate; a lightguide formed in the interlayer dielectric layer for the light receiving element; a light focusing pattern formed over the interlayer dielectric layer at the pixel region; a planarization layer formed over the substrate and covering the light focusing pattern; and a lens formed over the planarization layer at the pixel region.11-01-2012
20120273906DIELECTRIC BARRIERS FOR PIXEL ARRAYS - Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.11-01-2012
20120273905CFA RESIST SILYLATION FOR LIMITING COLOR INTERACTIONS AND IMPROVING CROSSTALK - An electronic imager includes a pixel sensor array, a plurality elements of a color filter array containing pigments forming multiple color filter patterns on the pixel sensor array and a silylating agent formed between at least first and second elements of the multiple color filter patterns. A method for forming a color filter array on a pixel sensor array of an electronic imager includes forming a pixel sensor array on a substrate, forming a first color filter pattern on the pixel sensor array, depositing a silylating agent on the first color filter pattern, disposing elements of a second color filter pattern on the silylating agent between respective elements of the first color filter pattern and disposing elements of a third color filter pattern on the silylating agent between respective elements of the first color filter pattern.11-01-2012
20110233705WAFER PROCESSING - Methods, devices, and systems for wafer processing are described herein. One method of wafer processing includes modifying a peripheral edge of a wafer to create a number of edge surfaces substantially perpendicular to a number of dicing paths and dicing the wafer along the number of dicing paths. In one or more embodiments, the method includes modifying the peripheral edge of the wafer with a first tool and dicing the wafer with a second tool different from the first tool.09-29-2011
20110233704SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD - A solid-state imaging device 09-29-2011
20110233703PHOTO DETECTOR DEVICE, PHOTO SENSOR AND SPECTRUM SENSOR - A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.09-29-2011
20110233702SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF DESIGNING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS - A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.09-29-2011
20100314704SOLID-STATE IMAGING DEVICE AND METHOD FOR MAKING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor base; a film constituting a cladding of a waveguide together with the insulating layer and being formed in an outer part of an interior of a hole by coating, the hole being formed in the insulating layer above the light receiving unit; a core of the waveguide, the core being composed of a material having a higher refractive index than a material for the insulating layer and a material for the film formed by coating, the core being formed in an inner part of the interior of the hole; and an inner lens integrated with the waveguide, the inner lens having a lens surface formed at the bottom of the hole at the interface between the film formed by coating and the core.12-16-2010
20100314703IMAGE SENSOR PACKAGE AND IMAGE SENSING MODULE USING SAME - An exemplary image sensor package includes a base substrate, an image sensor, and a number of wires. The base substrate contains carbon nanotubes and alumina, and includes a number of base pads. The image sensor is mounted on the base substrate, and includes a sensing portion and a number of contacts. The wires electrically connect the base pads to the respective contacts.12-16-2010
20130154041SOLID-STATE IMAGE SENSOR - According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.06-20-2013
20130154042Photonic Systems and Methods of Forming Photonic Systems - Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.06-20-2013
20130154043FILM-FORMING COMPOSITION - A film-forming composition including a triazine ring-containing hyperbranched polymer with a repeating unit structure indicated by formula (1), and inorganic micro particles is provided. This enables the provision of a film-forming composition capable of hybridizing without reducing dispersion of the inorganic micro particles in a dispersion fluid, capable of depositing a coating film with a high refractive index, and suitable for electronic device film formation.06-20-2013
20110284982BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING - Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.11-24-2011
20110284979SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SAME - A solid-state imaging device according to an aspect of the present invention includes: a semiconductor substrate; and a plurality of light-receiving units formed in a matrix in the semiconductor substrate and converting incident light into signal charges, and each of the convex parts is positioned corresponding to one of the light-receiving units and formed integrally with the semiconductor substrate.11-24-2011
20110304000SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SAME, AND IMAGE PICKUP APPARATUS - Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and constitutes a sensor unit; a charge storage sub-region made of an impurity region of the first conduction type, which is formed, in plural layers, in the semiconductor substrate below the charge storage region serving as a main charge storage region and wherein at least one or more of the plural layers are formed entirely across a pixel; and a device isolation region that is formed in the semiconductor substrate, isolates pixels from one another, and is made of an impurity region of a second conduction type.12-15-2011
20110309461OPTICAL DETECTOR AND SPECTRUM DETECTOR - A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through the plurality of convex portions among light incident on the plurality of convex portions. Accordingly, it is possible to detect light with a specific peak wavelength without using an optical component such as a diffraction grating or prism, so that a small-sized photodetector that does not require a complicated alignment of the optical axis in an optical system may be implemented.12-22-2011
20110309460SOLID-STATE IMAGING DEVICE INCLUDING A MULTILAYER WIRING LAYER, COLOR FILTERS, AND LENSES, AND MANUFACTURING METHOD FOR THE SAME - The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit region except areas above the photoelectric conversion elements; a waveguide member filling the areas above the photoelectric conversion elements (waveguides) and covering the multilayer wiring layer at least within the pixel region; and an optical structure (composed of a color filter material and a lens material) disposed above the waveguide member within the pixel region, wherein a groove is formed by removing a portion of the waveguide member from an area within the pixel region that is in a border between the pixel region and the peripheral circuit region.12-22-2011
20110309459Multi-Cascaded Photodiode - The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple structure and low cost.12-22-2011
20120007199PROTECTING BOND PAD FOR SUBSEQUENT PROCESSING - A method for opening a bond pad on a semiconductor device is provided. The method comprises removing a first layer to expose a first portion of the bond pad and forming a protective layer over the exposed first portion of the bond pad. The method further comprises performing subsequent processing of the semiconductor device and removing the protective layer to expose a second portion of the bond pad.01-12-2012
20120007198BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated (BSI) image sensor including a substrate, a plurality of photosensitive regions, a back-end-of-line (BEOL), a pad, a color filter array, a plurality of micro-lenses and a protection layer is provided. The substrate has a first surface and a second surface. The substrate has a pad opening therein through the first surface and the second surface. The photosensitive regions are disposed in the substrate. The BEOL is disposed on the first surface of the substrate. The pad is disposed in the BEOL and exposed by the pad opening. The color filter array is disposed on the second surface of the substrate. The micro-lenses are disposed on the color filter array. The protection layer at least covers the top corner and the sidewall of the pad opening.01-12-2012
20120018833Light-Guiding Structure, Image Sensor Including The Light-Guiding Structure, And Processor-Based System Including The Image Sensor - An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.01-26-2012
20120018832METHODS, STRUCTURES, AND DESIGN STRUCTURES FOR IMPROVED ADHESION OF PROTECTIVE LAYERS OF IMAGER MICROLENS STRUCTURES - Methods, structures, and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.01-26-2012
20120018831LIGHT PIPE FABRICATION WITH IMPROVED SENSITIVITY - In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.01-26-2012
20120018830Packaging device of image sensor - A packaging device of an image sensor includes a supporting seat and the image sensor. The supporting seat is a hollow frame having a predetermined thickness, a first surface, a second surface, and an inner edge receding from the second surface toward the first surface to form a recessed step. Plural contacts in the recessed step and in the outer periphery of the supporting seat are electrically connected by plural electrical connection structures. The image sensor has an active surface set on the recessed step by a flip-chip packaging technique. The image sensor also has plural conductive ends electrically connected to the contacts in the recessed step. An insulating material covers an inactive surface of the image sensor and fills the gap between the recessed step of the supporting seat and the image sensor to provide dust-proofness, shock resistance, and prevention against static electricity and leakage of light.01-26-2012
20130193541UV Radiation Recovery of Image Sensor - A method of an embodiment comprises forming a dielectric layer on a first side of an image sensor substrate, and exposing the dielectric layer to ultraviolet (UV) radiation. The image sensor substrate comprises a photo diode. A structure of an embodiment comprises a substrate and a charge-less dielectric. The substrate comprises a photo diode. The charge-less dielectric layer is on a first side of the substrate, and a total charge of the charge-less dielectric results in an average voltage drop of less than 0.2 V across the charge-less dielectric layer.08-01-2013
20130193538Methods and Apparatus for an Improved Reflectivity Optical Grid for Image Sensors - An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.08-01-2013
20130193539Method for Increasing Photodiode Full Well Capacity - A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.08-01-2013
20130193540Apparatus and Method for Reducing Dark Current in Image Sensors - A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.08-01-2013
20130193542IMAGE SENSOR, PRODUCTION APPARATUS, PRODUCTION METHOD, AND IMAGING APPARATUS - An image sensor includes a substrate formed of a material having a light absorption coefficient higher than that of silicon, and a photoelectric conversion element formed on the substrate for photoelectrically converting incident light.08-01-2013
20130193543SEMICONDUCTOR OPTOELECTRONICS DEVICES - A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.08-01-2013
20130193544MICROSCOPY METHOD AND SYSTEM INCORPORATING NANOFEATURES - A lensfree imaging and sensing device includes an image sensor comprising an array of pixels and a substantially optically transparent layer disposed above the image sensor. Nano-sized features that support surface plasmon waves are populated on the substantially optically transparent layer separating the image sensor from the nano-sized features. The nano-sized features may include apertures through a substantially optically opaque layer (e.g., metal layer) or they may include antennas. An illumination source is provided that is configured to illuminate a sample. At least one processor is operatively coupled to the image sensor. Changes to the detected transmission pattern at the image sensor are used to sense conditions at or near the surface containing the nano-sized features. Conditions may include binding events or other changes to the index of refraction occurring near the surface of the device.08-01-2013
20130200478SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state imaging apparatus and a manufacturing method of a solid-state imaging apparatus are provided. Metal wirings 08-08-2013
20130099344RADIATION IMAGE PICKUP APPARATUS, RADIATION IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING RADIATION IMAGE PICKUP APPARATUS - The present invention provides a radiation image pickup apparatus in which one or more image pickup elements are easily exchanged.04-25-2013
20120086096CONDENSER LENS-COUPLED PHOTOCONDUCTIVE ANTENNA DEVICE FOR TERAHERTZ WAVE GENERATION AND DETECTION AND FABRICATING METHOD THEREOF - Provided are a condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection and a fabricating method thereof. A condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection includes a condenser lens, a photoconductive thin film deposited on the condenser lens, and a metal electrode formed on the photoconductive thin film for a photoconductive antenna. In the antenna device, the condenser lens and the photoconductive thin film are coupled to each other.04-12-2012
20120086095Photoelectric Conversion Device and Image Pick-Up Device - A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.04-12-2012
20120086094SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed in the same layer as the light-shielding film; an on-chip lens layer formed over the light-shielding film and the pad section base layer in a side opposite from the substrate side; a back electrode pad section formed above the on-chip lens layer; a through-hole formed to penetrate the on-chip lens layer, the pad section base layer, and the substrate so as to expose the surface electrode pad section; and a through-electrode layer which is formed in the through-hole and connects the surface electrode pad section and the back electrode pad section.04-12-2012
20120086092SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate in which a plurality of pixels including photoelectric converters are formed, a wiring layer that includes wirings in a plurality of layers formed via an interlayer insulating film in a front surface side of the substrate, a base electrode pad portion that includes a portion of the wirings formed in the wiring layer, an opening that penetrates the substrate from a rear surface side of the substrate and reaches the base electrode pad portion, and an embedded electrode pad layer that is formed so as to be embedded in the opening by electroless plating.04-12-2012
20120086091BACKSIDE IMAGE SENSOR - A backside image sensor including an assembly of pixels, each pixel including, in a vertical stack, a photosensitive area and a filtering element topping the photosensitive area on the back surface side, wherein at least two adjacent filtering elements of adjacent pixels are separated by a vertical metal wall extending over at least eighty percent of the height of the filtering elements or over a greater height.04-12-2012
20130207213Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same - A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.08-15-2013
20130207214Integrated Visible and Infrared Imager Devices and Associated Methods - Semiconductor devices having three dimensional (3D) architectures and methods form making such devices are provided. In one aspect, for example, a method for making a semiconductor device can include forming a device layer on a front side of a semiconductor layer that is substantially defect free, bonding a carrier substrate to the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a smart substrate to the processed surface. In some aspects, the method can also include removing the carrier substrate from the semiconductor layer to expose the device layer.08-15-2013
20130207215SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (08-15-2013
20130207212LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS - A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.08-15-2013