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Magnetic field

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257414000 - RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
257427000 Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit) 30
257422000 With magnetic field directing means (e.g., shield, pole piece, etc.) 20
257425000 Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.) 3
20130069186MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.03-21-2013
20100207222Hall Effect Element Having a Hall Plate with a Perimeter Having Indented Regions - A Hall effect element includes a Hall plate with an outer perimeter. The outer perimeter includes four corner regions, each tangential to two sides of a square outer boundary associated with the Hall plate, and each extending along two sides of the square outer boundary by a corner extent. The outer perimeter also includes four indented regions. Each one of the four indented regions deviates inward toward a center of the Hall plate. The Hall plate further includes a square core region centered with and smaller than the square outer boundary. A portion of each one of the four indented regions is tangential to a respective side of the square core region. Each side of the square core region has a length greater than twice the corner extent and less than a length of each side of the square outer boundary.08-19-2010
20130187248MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY - The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film.07-25-2013
257424000 Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) 1
20130099339Spintronic Electronic Device and Circuits - A spintronic electronic apparatus having a multilayer structure. The apparatus includes a substrate, having disposed in succession upon the substrate; a bottom interface layer; a pinned layer; a tunneling barrier; a free layer; and a top interface layer, wherein the apparatus operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession.04-25-2013
257423000 Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor) 1
20090057795Sensor chip having conductivity film - A sensor chip is provided that includes a sensor element and a control circuit for controlling the sensor element disposed in semiconductor substrate. The control circuit includes a plurality of circuit elements, each of which is isolated by P-N junction separation. The sensor chip further includes a conductivity film disposed on and surrounding at least one of the circuit elements, and having an electric potential fixed to a predetermined value.03-05-2009
Entries
DocumentTitleDate
20110175181Magnetic Tunnel Junction (MTJ) on Planarized Electrode - A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.07-21-2011
20110198715SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The semiconductor device of this invention includes a semiconductor substrate having a main surface, and a magnetoresistive element located over the main surface of the semiconductor substrate. Further, it includes a protective layer, a wiring, a first upper electrode, and a second upper electrode. The protective layer is disposed so as to cover the side surface of the magnetoresistive element. The wiring is located over the top of the magnetoresistive element. The first upper electrode substantially the same in dimensions in plan view as the magnetoresistive element is disposed over the magnetoresistive element. The second upper electrode is electrically coupled with the first upper electrode over the first upper electrode, and larger in dimensions in plan view than the first upper electrode.08-18-2011
20090261434STT MRAM Magnetic Tunnel Junction Architecture and Integration - A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.10-22-2009
20090206425SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a semiconductor device having an MTJ element capable of intentionally shifting the variation, at the time of manufacture, of a switching current of an MRAM memory element in one direction; and a manufacturing method of the device. The semiconductor device has a lower electrode having a horizontally-long rectangular planar shape; an MTJ element having a vertically-long oval planar shape formed on the right side of the lower electrode; and an MTJ's upper insulating film having a horizontally-long rectangular planar shape similar to that of the lower electrode and covering the MTJ element therewith. As the MTJ's upper insulating film, a compressive stress insulating film or a tensile stress insulating film for applying a compressive stress or a tensile stress to the MTJ element is employed.08-20-2009
20100117169MEMORY CELL WITH RADIAL BARRIER - Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.05-13-2010
20100117171SENSOR PACKAGE - Sensor package 05-13-2010
20100117170MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER - A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.05-13-2010
20120161262MAGNETIC TUNNEL JUNCTION DEVICE - The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.06-28-2012
20110298068MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT - A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co12-08-2011
20090194832Magnetic Tunnel Junction Cell Including Multiple Magnetic Domains - In a particular embodiment, a magnetic tunnel junction (MTJ) structure is disclosed that includes an MTJ cell having multiple sidewalls that extend substantially normal to a surface of a substrate. Each of the multiple sidewalls includes a free layer to carry a unique magnetic domain. Each of the unique magnetic domains is adapted to store a digital value.08-06-2009
20090194833TMR device with Hf based seed layer - A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.08-06-2009
20080251867Nanowire Magnetic Random Access Memory - An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10-16-2008
20090065883MRAM Device with Continuous MTJ Tunnel Layers - A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.03-12-2009
20130026585MRAM Device and Fabrication Method Thereof - According to an embodiment, a magnetoresistive random access memory (MRAM) device comprises a bottom electrode, a stack, a dielectric material, a dielectric layer, and a conductive material. The bottom electrode is over a substrate, and the stack is over the bottom electrode. The stack comprises a magnetic tunnel junction (MTJ) and a top electrode. The dielectric material is along a sidewall of the stack, and the dielectric material has a height greater than a thickness of the MTJ and less than a stack height. The dielectric layer is over the stack and the dielectric material. The conductive material extends through the dielectric layer to the top electrode of the stack.01-31-2013
20110193185MAGNETIC MEMORY DEVICE HAVING A RECORDING LAYER - There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.08-11-2011
20130037896SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.02-14-2013
20130037895METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An insulating layer is formed by oxidizing the conductive layer exposed outside the patterned magnetic tunnel junction layer using the etching gas.02-14-2013
20130037897METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE STRUCTURE EMPLOYING REDUCED PROCESSING STEPS - Disclosed is a novel non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM device structure on a planar surface using a reduced number of masks and etching steps.02-14-2013
20130037893SEMICONDUCTOR DEVICE - A semiconductor device includes a first free layer having a magnetic direction that changes according to a direction and an amount of a first current, a first tunnel insulating layer arranged on the first free layer, a pinned layer, arranged on the first tunnel insulating layer, having a magnetic direction set to a first direction, a second tunnel insulating layer arranged on the pinned layer, and a second free layer, arranged on the second tunnel insulating layer, having a magnetic direction that changes according to a direction and an amount of a second current.02-14-2013
20130037894METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION - In a method for fabricating a magnetic tunnel junction, a fixed layer, a tunnel insulating layer, a free layer, and an anti-etch layer are formed on a substrate. A sacrificial layer having a hole is formed on the anti-etch layer. An upper electrode is buried in the hole. The sacrificial layer is removed. The anti-etch layer, the free layer, the tunnel insulating layer, and the fixed layer are etched using the upper electrode as a mask.02-14-2013
20130037892SEMICONDCUTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer and having a changeable magnetic direction, and a magnetic induction layer formed to surround the pinned layer and have a magnetic direction permanently set to a second direction different from the first direction.02-14-2013
20130075846MAGNETIC MEMORY - A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.03-28-2013
20130075843SPIN TRANSISTOR AND MEMORY - A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.03-28-2013
20130032909HALL EFFECT ELEMENT HAVING A WIDE CROSS SHAPE WITH DIMENSIONS SELECTED TO RESULT IN IMPROVED PERFORMANCE CHARACTERISTICS - A Hall effect element includes a Hall plate having geometric features selected to result in a highest ratio of a sensitivity divided by a plate resistance. The resulting shape is a so-called “wide-cross” shape.02-07-2013
20130032911MAGNETIC MEMORY DEVICE AND FABRICATION METHOD THEREOF - A vertical magnetic memory device includes a pinned layer including a plurality of first ferromagnetic layers that are alternately stacked with at least one first spacer, wherein the pinned layer is configured to have a vertical magnetization, a free layer including a plurality of second ferromagnetic layers that are alternately stacked with at least one second spacer, and a tunnel barrier coupled between the pinned layer and the free layer.02-07-2013
20130032908Hybrid Film for Protecting MTJ Stacks of MRAM - A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack. The step of patterning and the step of forming the first dielectric cap layer are in-situ formed in a same vacuum environment. A second dielectric cap layer is formed over and contacting the first dielectric cap layer.02-07-2013
20130032910MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device includes a first fixing layer, a first tunnel barrier coupled to the first fixing layer, a free layer coupled to the first tunnel barrier and having a stacked structure including a first ferromagnetic layer, an oxide tunnel spacer, and a second ferromagnetic layer, a second tunnel barrier coupled to the free layer, and a second fixing layer coupled to the second tunnel barrier.02-07-2013
20130032907MRAM with sidewall protection and method of fabrication - BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited after the memory device has been patterned. The layer material is vertically etched down to expose the upper surface of the top electrode while leaving a residual layer of protective material surrounding the rest of the memory device. The material for the protection layer is selected to resist the etchant used to remove the first dielectric material from the via in the subsequent interconnect process. A second embodiment uses dual-layer sidewall protection in which the first layer covers the memory element is preferably an oxygen-free dielectric and the second layer protects the first layer during via etching.02-07-2013
20130075847MAGNETIC MEMORY - A magnetic memory has: a pinning layer being a perpendicular magnetic film whose magnetization direction is fixed; an underlayer formed on the pinning layer; and a data storage layer being a perpendicular magnetic film formed on the underlayer. The data storage layer has: a magnetization free region whose magnetization direction is reversible; and a magnetization fixed region magnetically coupled with the pinning layer through the underlayer. A magnetization direction of the magnetization fixed region is fixed by the magnetic coupling. The underlayer has a magnetic underlayer made of a magnetic material.03-28-2013
20130075845THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMENTS FOR SPIN-TRANSFER TORQUE SWITCHING DEVICE - Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier, A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.03-28-2013
20130075842SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes: forming an MTJ element and an electrode layer pattern over a substrate; forming a protective layer to protect the MTJ element and the electrode layer pattern; forming at least one insulation layer over the protective layer; forming a first hole by selectively removing the at least one insulation layer; forming an overhang pattern protruding from the sidewall of the first hole; forming a second hole exposing the electrode layer pattern by selectively removing the at least one insulation layer exposed at the bottom of the first hole by using the overhang pattern as a mask; and forming a conductive layer pattern to be electrically coupled to the electrode layer pattern exposed through the second hole.03-28-2013
20130075839STRUCTURE AND METHOD FOR A MRAM DEVICE WITH AN OXYGEN ABSORBING CAP LAYER - The present disclosure provides a MTJ stack for an MRAM device. The MTJ stack includes a pinned ferromagnetic layer over a pinning layer; a tunneling barrier layer over the pinned ferromagnetic layer; a free ferromagnetic layer over the tunneling barrier layer; a conductive oxide layer over the free ferromagnetic layer; and a oxygen-based cap layer over the conductive oxide layer.03-28-2013
20130075838METHOD AND STRUCTURE FOR A MRAM DEVICE WITH A BILAYER PASSIVATION - The present disclosure provides a magnetoresistive random access memory (MRAM) device. The MRAM device includes a magnetic tunnel junction (MTJ) stack on a substrate; and a dual-layer passivation layer disposed around the MTJ stack. The dual-layer passivation layer includes an oxygen-free film formed adjacent sidewalls of the MTJ stack; and a moisture-blocking film formed around the oxygen-free film.03-28-2013
20130075837TECHNIQUE FOR SMOOTHING AN INTERFACE BETWEEN LAYERS OF A SEMICONDUCTOR DEVICE - The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.03-28-2013
20100032777MAGNETIC MEMORY CELL CONSTRUCTION - A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.02-11-2010
20130082339METHOD FOR MANUFACTURING AND MAGNETIC DEVICES HAVING DOUBLE TUNNEL BARRIERS - A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.04-04-2013
20130075844SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to the present embodiment comprises a lower electrode provided above a semiconductor substrate and made of metal, an upper electrode provided above the lower electrode and made of metal, and a crystal layer provided between the lower electrode and the upper electrode. A thickness of each of the lower electrode and the upper electrode is smaller than a thickness of a skin layer deriving from a skin effect corresponding to a frequency of a microwave used to crystallize the crystal layer.03-28-2013
20130075841SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer, and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device.03-28-2013
20130075840METHOD FOR FABRICATION OF A MAGNETIC RANDOM ACCESS MEMORY (MRAM) USING A HIGH SELECTIVITY HARD MASK - A self-aligned via of a MRAM cell that connects a memory element including a top electrode, a memory element stack having a plurality of layers, and a bottom electrode to a bit line running over array of the memory elements. The self-aligned via also serves as a hard mask for memory element etching. The hard mask material has high selectivity in the etching ambient to maintain enough remaining thickness. It is also selectively removed during dual damascene process to form a self-aligned via hole. In one embodiment, Aluminum oxide or Magnesium oxide is adapted as the hard mask.03-28-2013
20090174015Memory Cell and Method of Forming a Magnetic Tunnel Junction (MTJ) of a Memory Cell - A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.07-09-2009
20100102406MAGNETIC STACK DESIGN - A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.04-29-2010
20100096715MAGNETIC RANDOM ACCESS MEMORY - A magnetic recording layer 04-22-2010
20130043549Hole First Hardmask Definition - A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top electrode may have slanted sidewalls. The MTJ stack may be formed by depositing corresponding MTJ layers. A patterned mask may be formed and patterned over the MTJ layers to form an opening defining the top electrode. The opening is filled with a conductive material to form the top electrode. The top electrode is then used as a mask to pattern the MTJ layers, thereby forming a MTJ stack.02-21-2013
20100109111MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE MAGNETIZATION - The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers.05-06-2010
20100109110ST-RAM Cells with Perpendicular Anisotropy - Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or “out-of-plane”. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.05-06-2010
20100109109MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled.05-06-2010
20100109107MAGNETIC STACK DESIGN WITH DECREASED SUBSTRATE STRESS - A magnetic element and a method for making a magnetic element. The method includes patterning a first electrode material to form a first electrode on a substrate and depositing filler material on the substrate around the first electrode. The method further includes polishing to form a planar surface of filler and the first electrode. A magnetic cell is formed on the planar surface and a second electrode is formed on the magnetic cell. In some embodiments, the first electrode has an area that is at least 2:1 to the area of the magnetic cell.05-06-2010
20100109108STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT - Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.05-06-2010
20100109106High density spin-transfer torque MRAM process - A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.05-06-2010
20090146232MAGNETORESISTIVE DEVICE - A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.06-11-2009
20130087870NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER - A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.04-11-2013
20130087871NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER - A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.04-11-2013
20130087872NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER - A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.04-11-2013
20130087869NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER - A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.04-11-2013
20130087868INTEGRATED HALL-CONTROLLED SWITCH DEVICES - Embodiments relate to Hall-controlled switch devices. In an embodiment, a Hall switch and a load switch are integrated in a single integrated circuit device. Embodiments can provide load switching and optional simultaneous logic signaling, for example to update a microcontroller or electronic control unit (ECU), while reducing space and complexity and thereby cost.04-11-2013
20120181644LOW POWER MAGNETIC RANDOM ACCESS MEMORY CELL - The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.07-19-2012
20120181643SPIN TRANSPORT DEVICE - The spin transport device includes a semiconductor layer; a first ferromagnetic layer provided on the semiconductor layer via a first tunnel barrier layer; a second ferromagnetic layer provided on the semiconductor layer via a second tunnel barrier layer so as to be divided from the first ferromagnetic layer; and a first wire which generates, upon application of an electric current, a magnetic field in a region between the first ferromagnetic layer and the second ferromagnetic layer in the semiconductor layer.07-19-2012
20120181641SENSOR MODULE - A sensor module includes a sensor, a module cover, and a wiring unit. The cover holds the sensor and includes a connector configured to make a connection with an external device. The wiring unit is held by the cover and is arranged from the connector to the sensor. The wiring unit includes a connecting member extending from the connector to a central region of the cover in its width direction and a wiring member extending from the central region of the cover in its width direction to a vicinity of the sensor. The cover and the connecting member are integrally formed from a mold material having insulation properties. The connecting member includes a first connecting terminal exposed at the central region of the cover. The wiring member includes a second connecting terminal conductively joined to the first connecting terminal.07-19-2012
20120181640Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof - In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.07-19-2012
20090302404SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device having an MTJ device excellent in operating characteristics and a manufacturing method therefor are obtained. The MTJ device is formed of a laminated structure obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower magnetic film and the upper magnetic film contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO12-10-2009
20090302403SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL - A spin-torque magnetic memory element comprises a large magnetic volume, and a thick magnetic layer. The magnetic layer comprises a nearly round shape, a small intrinsic anisotropy and a uniaxial anisotropy that is substantially based on the shape. In one exemplary embodiment, the nearly round shape substantially comprises about a 60 nm by about a 40 nm ellipse shape, and the thick magnetic layer comprises a thickness of about 20 nm to about 100 nm, preferably about 40 nm. In another exemplary embodiment, the thick magnetic layer comprises a first layer of magnetic material that comprises a reasonably high unaxial magnetic anisotropy; and a second layer of magnetic material comprises between about no anisotropy (i.e., 0 anisotropy) and a much lower unaxial magnetic anisotropy than the first layer of magnetic material.12-10-2009
20090302405METHOD FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES - A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.12-10-2009
20120217598MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE - A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.08-30-2012
20120217597DEVICE FOR INCREASING THE MAGNETIC FLUX DENSITY - A device for increasing the magnetic flux density includes a semiconductor body and a first magnetic sensor integrated into the semiconductor body, whereby a housing section, which forms a cavity, is arranged above the sensor on the semiconductor surface and the cavity is filled with a ferromagnetic material and the material comprises a liquid.08-30-2012
20120217596MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING THE SAME - A magnetic tunnel junction includes a first magnetic layer, a tunnel insulating layer and a second magnetic layer. The first magnetic layer is formed on a substrate. The tunnel insulating layer is formed on the first magnetic layer. The second magnetic layer is formed on the tunnel insulating layer, where the second magnetic layer is shaped to be narrower at a center than at ends.08-30-2012
20120217594MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetic random access memory includes a semiconductor substrate, an MTJ element formed from a perpendicular magnetization film and arranged above the semiconductor substrate, and a stress film including at least one of a tensile stress film arranged on an upper side of the MTJ element to apply a stress in a tensile direction with respect to the semiconductor substrate and a compressive stress film arranged on a lower side of the MTJ element to apply a stress in a compressive direction with respect to the semiconductor substrate.08-30-2012
20130069182MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD - According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.03-21-2013
20130069184MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF - According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.03-21-2013
20130069183Method for Forming A Self-Aligned Hard Mask for Contact to a Tunnel Junction - A magnetic memory cell having a self-aligned hard mask for contact to a magnetic tunnel junction is provided. For example, a magnetic memory cell includes a magnetic storage element formed on a semiconductor substrate, and a hard mask that is self-aligned with the magnetic storage element. The hard mask includes a hard mask material layer formed on an upper surface of a magnetic stack in the magnetic storage element, an anti-reflective coating (ARC) layer formed on at least a portion of an upper surface of the hard mask material layer, wherein the ARC layer is selected to be removable by a wet etch, and a photoresist layer formed on at least a portion of an upper surface of the ARC layer. The selected portions of the ARC layer and photoresist layer are removed in a same processing step with wet etch techniques without interference to the magnetic stack.03-21-2013
20120112299FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME - For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co05-10-2012
20120112298MAGNETIC MEMORY DEVICES - A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a component which lies in a plane perpendicular to the magnetization direction of the magnetic pattern.05-10-2012
20120112297MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME - According to one embodiment, a magnetic random access memory including a magneto resistive element, including a free layer including first metal atoms, a first metal layer on the free layer and including a first metal, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer provided on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second metal layer on the second interfacial magnetic layer and including a second metal, and a pinned layer provided on the second metal layer and including the second metal atoms.05-10-2012
20090273044Semiconductor Device, Memory Module, and Method of Manufacturing a Semiconductor Device - According to one embodiment of the present invention, a semiconductor device is provided including a semiconductor chip. The semiconductor chip is at least partly surrounded by a surrounding structure. The semiconductor chip further includes a magneto-resistive memory cell. A shielding layer is disposed between the semiconductor chip and the surrounding structure, wherein the shielding layer is configured to shield the magneto-resistive memory cell from external magnetic fields.11-05-2009
20130062716METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION DEVICE - A method of forming a magnetic tunnel junction device is disclosed that includes forming a trench in a substrate, the trench including a plurality of sidewalls and a bottom wall. The method includes depositing a first conductive material within the trench proximate to one of the sidewalls and depositing a second conductive material within the trench. The method further includes depositing a material to form a magnetic tunnel junction (MTJ) structure within the trench. The MTJ structure includes a fixed magnetic layer having a magnetic field with a fixed magnetic orientation, a tunnel junction layer, and a free magnetic layer having a magnetic field with a configurable magnetic orientation. The method further includes selectively removing a portion of the MTJ structure to create an opening in the MTJ structure.03-14-2013
20130062715SYMMETRICALLY SWITCHABLE SPIN-TRANSFER-TORQUE MAGNETORESISTIVE DEVICE - A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance layer (SABL) near the free layer of the MTJ reduces a first switching current Ic(p-ap) causing the value of the first switching current to be nearly equal to the value of a second switching current Ic(ap-p) without increasing the average switching current of the device. The SABL may be a non-magnetic switching asymmetry balance layer (NM-SABL) and/or a magnetic switching asymmetry balance layer (M-SABL).03-14-2013
20130062714STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES - Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.03-14-2013
20120235258TMR Device with Improved MgO Barrier - A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a M09-20-2012
20130161768MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE COUPLED TO A MAGNETIC ELEMENT AND METHOD OF MANUFACTURE THEREOF - A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.06-27-2013
20130161770MAGNETORESISTIVE DEVICE AND A METHOD OF FORMING THE SAME - According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.06-27-2013
20130161771REDUCING SOURCE LOADING EFFECT IN SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY (STT-MRAM) - An apparatus includes a memory cell including a magnetic tunnel junction (MTJ) structure coupled between a bit line and a source line. The MTJ structure includes a free layer coupled to the bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. A physical dimension of the pinned layer produces an unbalanced offset magnetic field which corresponds to a first switching current of the MTJ structure that enables switching from the first state to the second state when a first voltage is applied to the bit line and corresponds to a second switching current that enables switching from the second state to the first state when the first voltage is applied to the source line.06-27-2013
20130207209TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION - A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.08-15-2013
20110031569METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.02-10-2011
20120280338SPIN TORQUE MRAM USING BIDIRECTIONAL MAGNONIC WRITING - An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.11-08-2012
20110127626Fabrication and Integration of Devices with Top and Bottom Electrodes Including Magnetic Tunnel Junctions - An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the electronic device and in a separate process from patterning a top electrode. A first dielectric layer is then deposited on the electronic device and the bottom electrode layer followed by a top electrode layer. The top electrode is then patterned in a separate process from the bottom electrode. Separately patterning the top and bottom electrodes improves yields by reducing voids in the dielectric material between electronic devices. One electronic device the manufacturing process is well-suited for is magnetic tunnel junctions (MTJs).06-02-2011
20110298069MAGNETIC RANDOM ACCESS MEMORY WITH DUAL SPIN TORQUE REFERENCE LAYERS - A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage.12-08-2011
20130161769MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME - Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.06-27-2013
20110089507Novel bit line preparation method in MRAM fabrication - A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater than a MTJ top electrode and serves as an etch stop during bit line etching to prevent sub-trenches from forming adjacent to the top electrode and causing shorts. MCBs also prevent insufficient etching that causes open circuits. A MCB is preferably a metal, metal compound, or alloy such as Ta with low resistivity and high conductivity. The MCB layer is patterned prior to using a dual damascene process to form a bit line contacting each MCB and a bit line pad connection to a word line pad. MCB thickness is thin enough to allow a strong bit line magnetic field for switching a free layer and large enough to function as an efficient oxide etch stop.04-21-2011
20090206427MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.08-20-2009
20090206424HALL-EFFECT DEVICE WITH MERGED AND/OR NON-MERGED COMPLEMENTARY STRUCTURE - A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.08-20-2009
20110284977Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy - An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.11-24-2011
20120181642MAGNETIC TUNNEL JUNCTION COMPRISING A POLARIZING LAYER - The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.07-19-2012
20100090300MRAM CELLS INCLUDING COUPLED FREE FERROMAGNETIC LAYERS FOR STABILIZATION - A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.04-15-2010
20100090301MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT - A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.04-15-2010
20110133298Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer - A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure. The MTJ element includes a stack comprising a pinned layer, a barrier layer, and a composite free layer. The composite free layer includes a first free layer, a superparamagnetic layer and a nonmagnetic spacer layer interspersed between the first free layer and the superparamagnetic layer. A thickness of the spacer layer controls a manner of magnetic coupling between the first free layer and the superparamagnetic layer.06-09-2011
20100213558Magnetic Memory Device - A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.08-26-2010
20120098077Writable Magnetic Element - The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle α lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in a first magnetization direction or in a second magnetization direction opposite to the first.04-26-2012
20090146231Magnetic memory device having a C-shaped structure and method of manufacturing the same - A non-volatile magnetic memory device having one or more memory cells, each of the memory cells includes a magnetic switch including a C-shaped magnetic component and a write coil located proximate the magnetic component, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.06-11-2009
20090256220Low switching current MTJ element for ultra-high STT-RAM and a method for making the same - A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R is disclosed. The MTJ has a MgO tunnel barrier formed by natural oxidation to achieve a low RA, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc10-15-2009
20110186948Semiconductor-Based Magnetic Material - Magnetic material based on at least one magnetic 308-04-2011
20110186947MAGNETIC NANOHOLE SUPERLATTICES - A magnetic material is disclosed including a two-dimensional array of carbon atoms and a two-dimensional array of nanoholes patterned in the two-dimensional array of carbon atoms. The magnetic material has long-range magnetic ordering at a temperature below a critical temperature Tc.08-04-2011
20110186946Magnetic Tunnel Junction with Domain Wall Pinning - Magnetic tunnel junctions (MTJs) are manufactured having pinning sites in a ferromagnetic layer of the MTJ. The pinning sites are created using patterns in the photomask used during patterning of the ferromagnetic layer without adding additional processes to manufacturing of the MTJs. The pinning sites create energy barriers substantially preventing a domain wall in the ferromagnetic layer from passing into fixed regions of the ferromagnetic layer. Additionally, the pinning sites substantially prevent a domain wall in the ferromagnetic layer from returning to the middle of the free region. Pinning the domain wall at the boundary of the fixed region and the free region the ferromagnetic layer improves reliability and sensitivity of the MTJ. The ferromagnetic layer may be magnetized in a direction perpendicular to the plane of the ferromagnetic layer.08-04-2011
20100032779SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device that has an improved adhesion between a bottom conductive layer and a protection film protecting an MTJ element.02-11-2010
20100032778MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS - Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.02-11-2010
20100264500METHOD OF FABRICATING STRUCTURES - A method of processing a stack, the method including depositing a fusible material on a first hardmask layer, the first hardmask layer disposed on a surface of a pre-processed stack, the pre-processed stack being disposed on at least a portion of a substrate; heating the fusible material layer to a temperature at or above its melting point to cause it to form a fusible material sphere, the fusible material sphere disposed on less than the entire first hardmask layer; etching the first hardmask layer, wherein the fusible material sphere prevents a portion of the first hardmask layer from etching, thereby forming a second hardmask layer; and etching the pre-processed stack, wherein at least the second hardmask layer prevents a portion of the pre-processed stack from etching, thereby forming a stack.10-21-2010
20100102404Magnetic Tunnel Junction and Method of Fabrication - In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes applying a dielectric layer to a surface, applying a metal layer to the dielectric layer, and adding a cap layer on the dielectric layer. The method also includes forming a magnetic tunnel junction (MTJ) stack such that an electrode of the MTJ stack is disposed on the metal layer and the cap layer contacts a side portion of the metal layer. An adjustable depth to via may connect a top electrode of the MTJ stack to a top metal.04-29-2010
20080272448INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE - An integrated circuit having a magnetic tunnel junction device is disclosed. In one embodiment, the device includes: a spin transfer torque magnetization reversal structure including a first ferromagnetic structure, a second ferromagnetic structure, and a tunnel barrier structure between the first ferromagnetic structure and the second ferromagnetic structure.11-06-2008
20090152657MAGNETIC FIELD DETECTOR - Disclosed is a magnetic field detector having various structures that can be used as a high-density magnetic biosensor. An embodiment of the invention provides a magnetic field detector using a thin film for detecting magnetic beads. The magnetic field detector includes: a substrate; a magnetoresistive element that is formed on an upper surface of the substrate in a ring shape using the thin film; electrodes that are formed on the upper surface of the substrate to be connected to the magnetoresistive element; a protective layer that is formed on the magnetoresistive element and the electrodes; and a magnetic bead limiting layer that is formed on an upper surface of the protective layer to cover the entire surface of the magnetoresistive element and portions of the electrodes.06-18-2009
20120032287MRAM Device and Integration Techniques Compatible with Logic Integration - A semiconductor device includes a magnetic tunnel junction (MTJ) storage element configured to be disposed in a common interlayer metal dielectric (IMD) layer with a logic element. Cap layers separate the common IMD layer from a top and bottom IMD layer. Top and bottom electrodes are coupled to the MTJ storage element. Metal connections to the electrodes are formed in the top and bottom IMD layers respectively through vias in the separating cap layers. Alternatively, the separating cap layers are recessed and the bottom electrodes are embedded, such that direct contact to metal connections in the bottom IMD layer is established. Metal connections to the top electrode in the common IMD layer are enabled by isolating the metal connections from the MTJ storage elements with metal islands and isolating caps.02-09-2012
20090096045MAGNETORESISTIVE DEVICE AND NONVOLATILE MAGNETIC MEMORY EQUIPPED WITH THE SAME - A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.04-16-2009
20090096042MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.04-16-2009
20080308887SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.12-18-2008
20080265347MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF - A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.10-30-2008
20100123208MR device with synthetic free layer structure - A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.05-20-2010
20120187510METHOD FOR FABRICATING MAGNETIC TUNNEL JUNCTION - A method for fabricating a magnetic tunnel junction element includes forming a magneto resistance layer including a first magnetic layer, an insulation layer and a second magnetic layer on a substrate, forming a magnetic loss area by doping a magnetic loss impurity into a region of the magneto resistance layer to cause a magnetic loss, and etching the magnetic loss area to form a magnetic tunnel junction element.07-26-2012
20100078741STRAM WITH COMPENSATION ELEMENT - Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.04-01-2010
20100078742FLUX-CLOSED STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER - Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.04-01-2010
20100078743STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER - Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.04-01-2010
20110062538MAGNETIC ELEMENT HAVING REDUCED CURRENT DENSITY - A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.03-17-2011
20110062537Magnetic Memory Devices - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.03-17-2011
20110062536Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory - A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.03-17-2011
20090206426MAGNETORESISTIVE EFFECT ELEMENT - A magnetoresistive element includes first, second, and third fixed layers, first, second, and third spacer layers, and a free layer. The first fixed layer is made of a ferromagnetic material and having an invariable magnetization direction. The first spacer layer is formed on the first fixed layer and made of an insulator. The free layer is formed on the first spacer layer, made of a ferromagnetic material, and having a variable magnetization direction. The second spacer layer is formed on the free layer and made of a nonmagnetic material. The second fixed layer is formed on the second spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction. The third spacer layer is formed below the first fixed layer and made of a nonmagnetic material. The third fixed layer is formed below the third spacer layer, made of a ferromagnetic material, and having an invariable magnetization direction.08-20-2009
20090278218Magnetoresistive element - A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer.11-12-2009
20100123207Bottom electrode mask design for ultra-thin interlayer dielectric approach in MRAM device fabrication - A bottom electrode (BE) layout is disclosed that has four distinct sections repeated in a plurality of device blocks and is used to pattern a BE layer in a MRAM. A device section includes BE shapes and dummy BE shapes with essentially the same shape and size and covering a substantial portion of substrate. There is a via in a plurality of dummy BE shapes where each via will be aligned over a WL pad. A second bonding pad section comprises an opaque region having a plurality of vias. The remaining two sections relate to open field regions in the MRAM. The third section has a plurality of dummy BE shapes with a first area size. The fourth section has a plurality of dummy BE shapes with a second area size greater than the first area size to provide more complete BE coverage of an underlying etch stop ILD layer.05-20-2010
20110169114ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC ORIENTATION - Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.07-14-2011
20110169113SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH07-14-2011
20110169112Composite Hardmask Architecture and Method of Creating Non-Uniform Current Path for Spin Torque Driven Magnetic Tunnel Junction - A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includes a pinned layer, a barrier layer, a free layer and a composite hardmask or top electrode. The composite hardmask/top electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional tuning layer interposed between the free layer and the top electrode helps to reduce the damping constant of the free layer.07-14-2011
20110169111OPTIMIZED FREE LAYER FOR SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY - A magnetic tunnel junction stack that includes a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), and a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to an MgO interface of the tunnel barrier layer and with a magnetic moment per unit area within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm07-14-2011
20090273045MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device further includes a magnetic tunnel junction structure connected to the readout diode, first and second write-in conductors disposed at both sides of the magnetic tunnel junction structure and connected to the first and second write-in diodes, respectively and a first write-in line, a readout line and a second write-in line, which are connected to the first write-in conductor, the magnetic tunnel injection structure, and the second write-in conductor, respectively.11-05-2009
20100276768SIDEWALL COATING FOR NON-UNIFORM SPIN MOMENTUM-TRANSFER MAGNETIC TUNNEL JUNCTION CURRENT FLOW - A magnetic tunnel junction device comprises a substrate including a patterned wiring layer. A magnetic tunnel junction (MTJ) stack is formed over the wiring layer. A low-conductivity layer is formed over the MTJ stack and a conductive hard mask is formed thereon. A spacer material is then deposited that includes a different electrical conductivity than the low conductivity layer. The spacer material is etched from horizontal surfaces so that the spacer material remains only on sidewalls of the hard mask and a stud. A further etch process leaves behind the sidewall-spacer material as a conductive link between a free magnetic layer and the conductive hard mask, around the low-conductivity layer. A difference in electrical conductivity between the stud and the spacer material enhances current flow along the edges of the free layer within the MTJ stack and through the spacer material formed on the sidewalls.11-04-2010
20090294881SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH12-03-2009
20090261436NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT - A magneto-resistive device has a magnetic free layer (10-22-2009
20090261435MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE - A magnetic memory element having a layer structure containing a fixing layer (pinned layer: PL) having a magnetization direction fixed unidirectionally, a nonmagnetic dielectric layer (TN10-22-2009
20120292724MAGNETIC DEVICE - A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.11-22-2012
20100102407MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.04-29-2010
20100102405ST-RAM EMPLOYING A SPIN FILTER - A memory cell that includes a first electrode layer; a spin filter layer that includes a material that has exchange splitting in the conduction band; and a magnetic layer, wherein the magnetization of the second magnetic layer can be effected by the torque of electrons tunneling through, wherein the spin filter layer is between the first electrode layer and the magnetic layer.04-29-2010
20080246104High Capacity Low Cost Multi-State Magnetic Memory - One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.10-09-2008
20080246103MR device with surfactant layer within the free layer - The dR/R ratios of TMR and GMR devices, having a FeCo/NiFe type of free layer, have been significantly increased by inserting a suitable surfactant layer within (as opposed to above or below) the free layer. Our preferred surfactant material has been oxygen but similar-acting materials could be substituted. The concept can be applied to GMR CPP, CIP, and CCP sensor designs.10-09-2008
20110204458Semiconductor Device and Method of Manufacturing the Same - The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO08-25-2011
20110204459SIDEWALL COATING FOR NON-UNIFORM SPIN MOMENTUM-TRANSFER MAGNETIC TUNNEL JUNCTION CURRENT FLOW - A magnetic tunnel junction device comprises a substrate including a patterned wiring layer. A magnetic tunnel junction (MTJ) stack is formed over the wiring layer. A low-conductivity layer is formed over the MTJ stack and a conductive hard mask is formed thereon. A spacer material is then deposited that includes a different electrical conductivity than the low conductivity layer. The spacer material is etched from horizontal surfaces so that the spacer material remains only on sidewalls of the hard mask and a stud. A further etch process leaves behind the sidewall-spacer material as a conductive link between a free magnetic layer and the conductive hard mask, around the low-conductivity layer. A difference in electrical conductivity between the stud and the spacer material enhances current flow along the edges of the free layer within the MTJ stack and through the spacer material formed on the sidewalls.08-25-2011
20090166773Magnetic memory cell and magnetic random access memory - Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.07-02-2009
20100193888Magnetic Tunnel Junction (MTJ) Storage Element and Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) Cells Having an MJT - A magnetic tunnel junction storage element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) bit cell includes a bottom electrode layer, a pinned layer adjacent to the bottom electrode layer, a dielectric layer encapsulating a portion of the bottom electrode layer and the pinned layer, the dielectric layer including sidewalls that define a hole adjacent to a portion of the pinned layer, a tunneling barrier adjacent to the pinned layer, a free layer adjacent to the tunneling barrier, and a top electrode adjacent to the free layer, wherein a width of the bottom electrode layer and/or the pinned barrier in a first direction is greater than a width of a contact area between the pinned layer and the tunneling barrier in the first direction. Also a method of forming an STT-MRAM bit cell.08-05-2010
20080277748Novel Class of Ferromagnetic Semiconductors - Single crystal and polycrystal oxoruthenates having the generalized compositions (Ba11-13-2008
20130020659MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.01-24-2013
20120193738TMR Device with Low Magnetorestriction Free Layer - A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA <3 ohm-um08-02-2012
20080283946MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - A magnetic random access memory includes a transistor having a gate electrode formed above a surface of a substrate, and first and second impurity diffusion regions which sandwich a channel region below the gate electrode, a first plug formed on the first impurity diffusion region, a recording element formed on the first plug, including a plurality of stacked layers, and configured to hold information in accordance with an internal magnetization state, a first signal line formed on the recording element, a second plug formed on the second impurity diffusion region, an electrical conductor formed on the second plug, an area of a shape of the electrical conductor, which is projected onto the surface of the substrate, being larger than that of a shape of the recording element, which is projected onto the surface of the substrate, and a second signal line formed on the electrical conductor.11-20-2008
20080308885MAGNETIC RANDOM ACCESS MEMORY AND FABRICATING METHOD THEREOF - A magnetic random access memory including a substrate, a first conductor layer, a magnetic layer, an insulating layer, a dielectric layer, two contacts and a second conductor layer is provided. The first conductor layer is disposed on the substrate. The magnetic layer is disposed on the first conductor layer. The insulating layer is disposed between the first conductor layer and the magnetic layer, and the thickness of the insulating layer is less than or equal to 1000 angstroms. The dielectric layer is disposed on the substrate and covers the magnetic layer, the insulating layer and the first conductor layer. The contacts are disposed in the dielectric layer and electrically connected to the first conductor layer and the magnetic layer respectively. The second conductor layer is disposed on the dielectric layer and includes two conductor patterns electrically connected to the corresponding contacts respectively.12-18-2008
20100276770SPIN CURRENT THERMAL CONVERSION DEVICE AND THERMOELECTRIC CONVERSION DEVICE - The invention relates to a spin current thermal conversion device and a thermoelectric conversion device, with which a spin current is thermally generated, and its concrete application is realized.11-04-2010
20090321859System and Method to Fabricate Magnetic Random Access Memory - A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, the method includes depositing a cap layer on a magnetic tunnel junction (MTJ) structure, depositing a first spin-on material layer over the cap layer, and etching the first spin-on material layer and at least a portion of the cap layer.12-31-2009
20130119496Semiconductor Magnetoresistive Random-access Memory (MRAM) Device and Manufacturing Method thereof - The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent magnetic tunnel junctions when data is written and read. This semiconductor MRAM device comprises a magnetic tunnel junction unit and a magnetic shielding material layer covering the sidewalls of the magnetic tunnel junction unit. The method for manufacturing a semiconductor device comprises: forming a magnetic tunnel junction unit, depositing an isolation dielectric layer to cover the top and the sidewall of the magnetic tunnel junction unit, and depositing a magnetic shielding material layer on the isolation dielectric layer.05-16-2013
20110006385MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS - A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.01-13-2011
20110006384MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE - A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.01-13-2011
20100140727MAGNETIC THIN FILM AND METHOD OF MANUFACTURING THE SAME, AND VARIOUS APPLICATION DEVICES USING THE SAME - The present invention relates to a magnetic thin film containing a L106-10-2010
20080258247SPIN-TRANSFER MRAM STRUCTURE AND METHODS - A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.10-23-2008
20100200939STORAGE ELEMENT AND MEMORY - A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 08-12-2010
20120068286MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.03-22-2012
20120068285MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT - According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.03-22-2012
20120068284MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1003-22-2012
20120068283SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer.03-22-2012
20120068282SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - To provide a semiconductor device capable of suppressing a short circuit between an upper conductive element and a lower conductive element which constitute an MRAM, and a manufacturing method of the same.03-22-2012
20120068281MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.03-22-2012
20120068280Magnetic Nano-Ring Device and Method of Fabrication - A magnetic nano-ring device and method of fabrication includes providing a substrate; forming at least one nano-pillar on the substrate; depositing a plurality of electrodes on the substrate; depositing an anti-ferromagnetic layer on a first electrode of the plurality of electrodes; depositing a first ferromagnetic layer on the anti-ferromagnetic layer; depositing a tunnel barrier layer on the first ferromagnetic layer; depositing a second ferromagnetic layer on the tunnel barrier layer; planarizing the nano-pillars and the second ferromagnetic layer to form a co-planar nano-pillar and second ferromagnetic layer; depositing a second electrode on the co-planar nano-pillar and second ferromagnetic layer; and forming a nano-structure ring in a substantially cylindrical configuration.03-22-2012
20120068279DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE - A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.03-22-2012
20090321860INTEGRATED CIRCUIT HAVING A MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD - An integrated circuit having a magnetic tunnel junction and method. One embodiment provides an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction includes a barrier layer. The barrier layer includes carbon, pyrolytic carbon, or graphene, or graphite.12-31-2009
20110140217SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION - A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.06-16-2011
20090050991Magnetic Element Having Low Saturation Magnetization - A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials02-26-2009
20090085132MRAM Cell Structure with a Blocking Layer for Avoiding Short Circuits - A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wider than the magnetic tunnel junction unit for preventing against formation of a short circuit between a contact and the magnetic tunnel junction unit.04-02-2009
20090224340ANTIFERROMAGNETIC HALF-METALLIC SEMICONDUCTOR AND MANUFACTURING METHOD THEREFOR - An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.09-10-2009
20110221016FLUX-CLOSED STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER - Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.09-15-2011
20090224342MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.09-10-2009
20100264501METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORAGE DEVICE - Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.10-21-2010
20090243008MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a10-01-2009
20090243007SPIN-DEPENDENT TUNNELLING CELL AND METHOD OF FORMATION THEREOF - A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.10-01-2009
20090250776MAGNETIC MEMORY DEVICE - There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.10-08-2009
20090250775MAGNETIC DEVICE WITH INTEGRATED MAGNETO-RESISTIVE STACK - This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic material; and means for causing an electron current to flow perpendicular to the plane of the layers, with at least one integrated nano-contact intended to inject the current into the magneto-resistive stack. The nano-contact is made in a bilayer composed of a solid electrolyte on which has been deposited a soluble electrode composed of a metal, and at least partially dissolved in the electrolyte.10-08-2009
20090140358MAGNETORESISTIVE ELEMENT - A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.06-04-2009
20120193736FABRICATION PROCESS AND LAYOUT FOR MAGNETIC SENSOR ARRAYS - A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.08-02-2012
20090256221METHOD FOR MAKING VERY SMALL ISOLATED DOTS ON SUBSTRATES - A method for forming very small isolated dots of a target material, e.g., a ferromagnetic material or phase change material, on a substrate includes providing a substrate having a layer of the target material disposed on a surface thereof, etching the layer of target material so as to form a plurality of lines of the material on the surface of the substrate, and etching the lines of the target material so as to form a rectangular matrix of substantially similar, very small isolated dots of the target material on the substrate. By the successive formation of orthogonally intersecting linear patterns on the substrate, including the formation and use of “hard” etch masks, spacer approach and selective etching techniques, the method enables very small (<65 nm) isolated dots of the target material to be formed on the substrate reliably and with the use of conventional 193 nm wavelength photolithographic methods and apparatus.10-15-2009
20120193737MRAM DEVICE AND METHOD OF ASSEMBLING SAME - A method of packaging a magnetoresistive random access memory (MRAM) die includes providing a lead frame having a die pad and lead fingers. The MRAM die is attached to the die pad with a first die attach adhesive and bond pads of the MRAM die are electrically connected to the lead fingers of the lead frame with wires using a wire bonding process. A pre-formed composite magnetic shield is attached to a top surface of the MRAM die with a second die attach adhesive. The magnetic shield includes a magnetic permeable filler material dispersed within an organic matrix. An encapsulating material is dispensed onto a top surface of the lead frame, MRAM die and magnetic shield such that the encapsulating material covers the MRAM die and the magnetic shield. The encapsulating material is then cured.08-02-2012
20090315128SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO12-24-2009
20100148288Vertical Cell Edge Junction Magnetoelectronic Device Family - Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element. The devices also employ a new operational geometry in which the transport of bias current is in the film plane of at least one of the thin film elements, but is substantially perpendicular to the film plane of at least one of the thin film elements. Additionally, any of the variety magnetoelectronic devices (e.g., current-in-plane spin valves, current-perpendicular-to-the-plane spin valves, magnetic tunnel junctions, and lateral spin valves can be fabricated using these features.06-17-2010
20080315335MAGNETORESISTIVE RANDOM ACCESS MEMORY - A magnetoresistive random access memory includes first and second magnetoresistive effect element. A shape of the first magnetoresistive effect element has a first length in a first direction and a second length in a second direction. The second length is equal to or greater than the first length. A ratio of the second length to the first length is a first value. The second magnetoresistive effect element is used to determine a resistance state of the first magnetoresistive effect element. A shape of the second magnetoresistive effect element has a third length in a third direction and a fourth length in a fourth direction. The fourth length is equal to or greater than the third length. A ratio of the fourth length to the third length is a second value which is greater than the first value.12-25-2008
20100258887Magnetic Tunnel Junction (MTJ) and Methods, and Magnetic Random Access Memory (MRAM) Employing Same - Magnetic tunnel junctions (MTJs) and methods of forming same are disclosed. A pinned layer is disposed in the MTJ such that a free layer of the MTJ can couple to a drain of an access transistor when provided in a magnetic random access memory (MRAM) bitcell. This structure alters the write current flow direction to align the write current characteristics of the MTJ with write current supply capability of an MRAM bitcell employing the MTJ. As a result, more write current can be provided to switch the MTJ from a parallel (P) to anti-parallel (AP) state. An anti-ferromagnetic material (AFM) layer is provided on the pinned layer to fix pinned layer magnetization. To provide enough area for depositing the AFM layer to secure pinned layer magnetization, a pinned layer having a pinned layer surface area greater than a free layer surface area of the free layer is provided.10-14-2010
20090079018MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L103-26-2009
20100258889High performance MTJ elements for STT-RAM and method for making the same - An STT-MTJ MRAM cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a composite tri-layer free layer that comprises an amorphous layer of Co10-14-2010
20100258886SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION STRUCTURE - The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.10-14-2010
20120228728SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.09-13-2012
20100176472NONVOLATILE MAGNETIC MEMORY DEVICE - A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second wiring line electrically connected to an upper part of the laminated structure, wherein a high Young's modulus region having a Young's modulus of a higher value than that of a Young's modulus of a material forming the recording layer is provided close to a side surface of the laminated structure.07-15-2010
20100176471Magnetic Element With Storage Layer Materials - According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.07-15-2010
20100176470NOVEL FREE LAYER/CAPPING LAYER FOR HIGH PERFORMANCE MRAM MTJ - An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni07-15-2010
20100193891In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.08-05-2010
20100193890MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY - A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.08-05-2010
20100193889MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - A domain wall motion type MRAM 08-05-2010
20100276769SEMICONDUCTOR DEVICE - A semiconductor device includes a magnetic sensor chip, an electrically conducting layer wafer-level patterned in contact with the magnetic sensor chip, encapsulation material disposed on the magnetic sensor chip, and an array of external contact elements electrically coupled with the magnetic sensor chip through the electrically conducting layer.11-04-2010
20100230770MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME - The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.09-16-2010
20100237448SEMICONDUCTOR MEMORY DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION ELEMENT AND FABRICATION METHOD THEREFOR - A method for fabricating a semiconductor memory device. An interlayer dielectric layer is formed over a semiconductor substrate including a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) as a cell transistor and a plurality of contact plugs in contact with source and drain regions of the cell transistor. A plurality of openings exposing one of the contact plugs is formed by removing a portion of the interlayer dielectric layer. A fixed magnetization layer, a tunnel barrier layer, and a free magnetization layer are sequentially stacked over the interlayer dielectric layer including the openings. A magnetic tunnel junction element is formed by planarizing the interlayer dielectric layer until a surface of the interlayer dielectric layer is exposed. The magnetic tunnel junction element includes the fixed magnetization layer, the tunnel barrier layer, and the free magnetization layer that fill each of the openings.09-23-2010
20100001356MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.01-07-2010
20120139069STORAGE NODES, MAGNETIC MEMORY DEVICES, AND METHODS OF MANUFACTURING THE SAME - A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.06-07-2012
20100237449MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.09-23-2010
20100207220ULTRAFAST MAGNETIC RECORDING ELEMENT AND NONVOLATILE MAGNETIC RANDOM ACCESS MEMORY USING THE MAGNETIC RECORDING ELEMENT - Provided are an ultrafast magnetic recording element and a nonvolatile magnetic random access memory using the same. The magnetic recording element includes a read electrode, a magnetic pinned layer formed on the read electrode, and an insulating layer or a conductive layer formed on the magnetic pinned layer. The magnetic recording element includes a magnetic free layer formed on the insulating layer or the conductive layer, in which a magnetic vortex is formed, and a plurality of drive electrodes applying a current or magnetic field to the magnetic free layer. Alternatively, the magnetic recording element includes a magnetic free layer in which a magnetic vortex is formed, a plurality of drive electrodes applying a current or a magnetic field to the magnetic free layer, and a read line disposed around the magnetic free layer. Herein, a current generated by a voltage induced by the movement of a magnetic vortex core flows through the read line. According to the magnetic recording elements, the magnetic recording element with a simple structure can be realized using a magnetic layer with a magnetic vortex formed, and the magnetic recording element can be accurately driven with low power using a plurality of drive electrodes.08-19-2010
20100252900Vertical Hall Sensor and Method of Producing a Vertical Hall Sensor - Through a main surface (10-07-2010
20100252901FERROELECTRIC THIN FILMS - Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.10-07-2010
20090096043MRAM with means of controlling magnetic anisotropy - We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, H04-16-2009
20090039451METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE - A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.02-12-2009
20090039450STRUCTURE OF MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE - A structure of magnetic memory cell including a first anti-ferromagnetic layer is provided. A first pinned layer is formed over the first anti-ferromagnetic layer. A tunneling barrier layer is formed over the first pinned layer. A free layer is formed over the tunneling barrier layer. A metal layer is formed over the free layer. A second pinned layer is formed over the metal layer. A second anti-ferromagnetic layer is formed over the second pinned layer.02-12-2009
20080296711MAGNETOELECTRONIC DEVICE HAVING ENHANCED PERMEABILITY DIELECTRIC AND METHOD OF MANUFACTURE - A magnetoelectronic device structure 12-04-2008
20100219492LOW SWITCHING FIELD LOW SHAPE SENSITIVITY MRAM CELL - Disclosed is a Magnetic Tunnel Junction (MTJ) stack usable in a nonvolatile magnetic memory array of MTJ stacks, the MTJ stack comprising: a) a fixed ferromagnetic layer having its magnetic moment fixed in a preferred direction in the presence of an applied magnetic field caused by a current; b) an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer; and c) a free ferromagnetic layer in contact with the insulating tunnel barrier layer, the free ferromagnetic layer comprising a synthetic anti-ferromagnet (SAF) stack comprising i) at least three ferromagnetic layers arranged anti-ferromagnetically relative to the next, and ii) at least two coupling layers, wherein the at least three ferromagnetic layers are separated by the at least two coupling layers.09-02-2010
20100219493Method of Forming a Magnetic Tunnel Junction Device - A method of forming a magnetic tunnel junction device is disclosed that includes forming a trench in a substrate, the trench including a first sidewall, a second sidewall, a third sidewall, a fourth sidewall, and a bottom wall. The method includes depositing a first conductive material within the trench proximate to the first sidewall and depositing a second conductive material within the trench. The method further includes depositing a magnetic tunnel junction (MTJ) structure within the trench. The MTJ structure includes a fixed magnetic layer having a magnetic field with a fixed magnetic orientation, a tunnel junction layer, and a free magnetic layer having a magnetic field with a configurable magnetic orientation. The method further includes selectively removing a portion of the MTJ structure that is adjacent to the fourth sidewall to create an opening such that the MTJ structure is substantially u-shaped.09-02-2010
20090108383High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same - A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um04-30-2009
20110049656Magnetic Tunnel Junction Device and Fabrication - A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming a top electrode layer over an MTJ structure. The top electrode layer includes a first nitrified metal.03-03-2011
20100289098Magnetic Tunnel Junction Device and Fabrication - A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) device on a structure that includes a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device including a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis.11-18-2010
20110001201SACRIFICE LAYER STRUCTURE AND METHOD FOR MAGNETIC TUNNEL JUNCTION (MTJ) ETCHING PROCESS - A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer.01-06-2011
20110241139MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory (MRAM) has a perpendicular magnetization direction. The MRAM includes a first magnetic layer, a second magnetic layer, a first polarization enhancement layer, a second polarization enhancement layer, a barrier layer, a spacer, and a free assisting layer. A pinned layer formed by the first magnetic layer and the first polarization enhancement layer has a first magnetization direction and a first perpendicular magnetic anisotropy. A free layer formed by the second magnetic layer and the second polarization enhancement layer has a second magnetization direction and a second perpendicular magnetic anisotropy. The barrier layer is disposed between the first polarization enhancement layer and the second polarization enhancement layer. The spacer is disposed on the second magnetic layer. The free assisting layer is disposed on the spacer and has an in-plane magnetic anisotropy. The spacer and the barrier layer are on opposite sides of the free layer.10-06-2011
20110108937Magnetic Tunnel Junction Structure - Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.05-12-2011
20120032288MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element comprises a multilayered structure and insulating film. The multilayered structure is formed on a substrate, and includes a fixed layer which has the invariable magnetization direction, a free layer which contains cobalt or iron and has the variable magnetization direction, and a nonmagnetic layer sandwiched between the fixed layer and free layer. The insulating film is formed on the side surface of the free layer, and contains boron and nitrogen.02-09-2012
20110031570Magnetic tunnel junction device and method of manufacturing the same - The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 02-10-2011
20090032891STRUCTURE OF MAGNETIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF - A structure of magnetic random access memory includes a magnetic memory cell formed on a substrate. An insulating layer covers over the substrate and the magnetic memory cell. A write current line is in the insulating layer and above the magnetic memory cell. A magnetic cladding layer surrounds the periphery of the write current line. The magnetic cladding layer includes a first region surrounding the top of the write current line, and a second region surrounding the side edge of the write current line, and extending towards the magnetic memory cell and exceed by a distance.02-05-2009
20100140726METHOD AND SYSTEM FOR PROVIDING MAGNETIC ELEMENTS HAVING ENHANCED MAGNETIC ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.06-10-2010
20110241140SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ASSEMBLY - A semiconductor device excellent in the magnetic shielding effect of blocking off external magnetic fields is provided. The semiconductor device includes: an interlayer insulating film so formed as to cover a switching element formed over a main surface of a semiconductor substrate; a flat plate-like lead wiring; a coupling wiring coupling the lead wiring and the switching element with each other; and a magnetoresistive element including a magnetization free layer the orientation of magnetization of which is variable and formed over the lead wiring. The semiconductor device has a wiring and another wiring through which the magnetization state of the magnetization free layer can be varied. In a memory cell area where multiple magnetoresistive elements are arranged, a first high permeability film arranged above the magnetoresistive elements is extended from the memory cell area up to a peripheral area that is an area other than the memory cell area.10-06-2011
20110241141Magnetic Element Having Low Saturation Magnetization - A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.10-06-2011
20110241138MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.10-06-2011
20100219491Magnetic Tunnel Junction Device and Fabrication - A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.09-02-2010
20110084347MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.04-14-2011
20100258888High performance MTJ element for STT-RAM and method for making the same - An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co10-14-2010
20100181632Magnetic tunnel junction device and memory device including the same - The output voltage of an MRAM is increased by means of an Fe(07-22-2010
20110147865INTEGRATED HYBRID HALL EFFECT TRANSDUCER - A Hall effect transducer in a semiconductor wafer comprises a first layer of semiconducting material, a second layer of semiconducting material, and a contact structure configured to provide a path for electrical current to pass through the second layer. The second layer has higher electron hole mobility than the first layer, and is epitaxially grown atop the first layer.06-23-2011
20110084349THERMOELECTRIC CONVERSION DEVICE - The thermoelectric conversion efficiency of a thermoelectric conversion device is increased by increasing the figure of merit of a spin-Seebeck effect element.04-14-2011
20090218644Integrated Circuit, Memory Device, and Method of Manufacturing an Integrated Circuit - According to one embodiment of the present invention, an integrated circuit including a plurality of conductive lines is provided. The conductive lines are configured to guide electric currents or voltages. The conductive lines are at least partially surrounded by material which increases the electric field confinement of electric fields occurring within the conductive lines, and which functions as a diffusion barrier for material included within the conductive lines.09-03-2009
20090218645 MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY - A multi-state spin-torque transfer magnetic random access memory (STTMRAM) is formed on a film and includes a first magnetic tunneling junctions (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer and a first free layer. The first fixed layer and first free layer each have a first magnetic anisotropy. The STTMRAM further includes a non-magnetic spacing layer formed on top of the first MTJ layer and a second MTJ formed on top of the non-magnetic spacing layer. The second MTJ has a second fixed layer, a second sub-MTJ layer and a second free layer. The second fixed and second free layers each have a second magnetic anisotropy, wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.09-03-2009
20100032780MRAM WITH EDDY CURRENT BARRIER - Disclosed is a magnetoresistive random access memory (“MRAM”) device comprising a plurality of layers on a substrate. The plurality of layers comprises pinning layers, flipping layers, and at least one insulating layer between the pinning layers and the flipping layers. An eddy current side wall encapsulates at least the pinning layers of the plurality of layers. The eddy current side wall comprises a grain insulating layer for electrical insulation, and a magnetic barrier layer for magnetic isolation.02-11-2010
20120146167MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME - A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.06-14-2012
20100065935Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM - A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc03-18-2010
20120199923METHOD AND APPARATUS FOR CONTROLLING TOPOGRAPHICAL VARIATION ON A MILLED CROSS-SECTION OF A STRUCTURE - An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.08-09-2012
20120199922STORAGE ELEMENT AND MEMORY DEVICE - A storage element includes: a storage layer that has magnetization perpendicular to a film face, the direction of the magnetization being changed corresponding to information; a magnetization fixed layer that has magnetization perpendicular to a film face that is a reference of the information stored in the storage layer; and an insulating layer that is formed of a nonmagnetic body provided between the storage layer and the magnetization fixed layer. The magnetization fixed layer has a structure in which the nonmagnetic layer is interposed between upper and lower ferromagnetic layers which have a laminated ferri-pinned structure of magnetically anti-parallel coupling. The direction of the magnetization of the storage layer is changed by injecting spin-polarized electrons in a lamination direction of a layer structure having the storage layer, the insulating layer, and the magnetization fixed layer, and recording of the information is performed on the storage layer.08-09-2012
20120241885MAGNETIC DEVICES AND STRUCTURES - Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is presented. The magnetic device includes a ferromagnet, an antiferromagnet coupled to the ferromagnet, and a nonmagnetic metal proximate to the ferromagnet. The antiferromagnet provides uniaxial anisotropy to the magnetic device. A resistance of the nonmagnetic metal is dependent upon a direction of a magnetic moment of the ferromagnet.09-27-2012
20120241886MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT - A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.09-27-2012
20120241882SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device, the method comprising forming a magnetic tunnel junction pattern on a substrate, forming a spacer having a metal oxide layer on a sidewall of the magnetic tunnel junction pattern, forming a first interlayer insulating layer on the substrate having the spacer and the magnetic tunnel junction pattern formed thereon, forming a first damascene pattern by etching the first interlayer insulating layer so that a top portion of the magnetic tunnel junction pattern is exposed, and forming a first wire buried in the first damascene pattern.09-27-2012
20120241880MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.09-27-2012
20120241878MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER - A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.09-27-2012
20110101477Method for manufacturing magnetic field detection devices and devices therefrom - A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.05-05-2011
20110101478High density spin-transfer torque MRAM process - A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.05-05-2011
20110073970MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.03-31-2011
20120119313Memory Cell With Phonon-Blocking Insulating Layer - An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.05-17-2012
20110248365MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME - A magnetic random access memory includes a magnetoresistive effect element which has a fixed layer, a recording layer and a non-magnetic layer provided between the fixed layer and the recording layer and in which the magnetization directions of the fixed layer and the recording layer are brought into a parallel state or an anti-parallel state in accordance with a direction of a current flowing between the fixed layer and the recording layer, a first contact which is connected to the recording layer and in which a contact area between the recording layer and the first contact is smaller than an area of the recording layer, and a cap layer which is provided between the first contact and the recording layer and which directly comes in contact with the first contact and which has a resistance higher than a resistance of the recording layer.10-13-2011
20100301436SEMICONDUCTOR DEVICE AND METHOD FOR MAKING SEMICONDUCTOR DEVICE - A semiconductor device with a functional element including an upper electrode composed of an electrically conductive metal oxide and being configured to store information; an interlayer insulating film covering the functional element; a contact hole formed in the interlayer insulating film, the contact hole including a side wall surface and a bottom and exposing an upper surface of the upper electrode at the bottom; an electrically conductive barrier film covering the bottom and the side wall surface of the contact hole; and a tungsten film formed on the electrically conductive barrier film, the tungsten film filling at least part of the contact hole, wherein a layer in which silicon atoms are concentrated is formed at the interface between the tungsten film and the electrically conductive barrier film.12-02-2010
20100295140SEMICONDUCTOR DEVICE - A semiconductor device includes a housing defining a cavity, a magnetic sensor chip disposed in the cavity, and mold material covering the magnetic sensor chip and substantially filling the cavity. One of the housing or the mold material is ferromagnetic, and the other one of the housing or the mold material is non-ferromagnetic.11-25-2010
20120267736Method And System For Providing A Magnetic Junction Having An Engineered Barrier Layer - A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.10-25-2012
20100244163MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.09-30-2010
20100084724MEMORY CELL WITH STRESS-INDUCED ANISOTROPY - A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.04-08-2010
20100084725MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER - A magnetic tunnel junction cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state. Memory devices and methods are also described.04-08-2010
20080315336Method of Assembly Using Array of Programmable Magnets - Systems and methods for assembling a structure onto a substrate include an array of programmable magnets disposed beneath a substrate, wherein a magnetic field is applied to the structure to levitate the structure above the substrate while the structure is moved relative to the substrate to align the structure with a corresponding recess formed in the substrate. A magnetic field may be applied to translate and rotate the structure relative to the substrate. Differences between or among the programmable magnets regarding magnetic polarity, energized versus de-energized status, and magnetic field strength may be used to move the structure relative to the substrate in conjunction with a closed-loop control system. A bonded substrate assembly and a method of bonding a first wafer to a second wafer include wherein the first wafer includes a projection and the second wafer includes a matching depression. The first and second wafers are bonded together at least in part via magnetic attraction between respective magnetic layers in the projection and the depression.12-25-2008
20080290432System having improved surface planarity for bit material deposition - The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.11-27-2008
20110254113ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT - In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.10-20-2011
20110163401SEMICONDUCTOR DEVICE HAVING MEMORY ELEMENT WITH STRESS INSULATING FILM - Provided are a semiconductor device having an MTJ element capable of intentionally shifting the variation, at the time of manufacture, of a switching current of an MRAM memory element in one direction; and a manufacturing method of the device. The semiconductor device has a lower electrode having a horizontally-long rectangular planar shape; an MTJ element having a vertically-long oval planar shape formed on the right side of the lower electrode; and an MTJ's upper insulating film having a horizontally-long rectangular planar shape similar to that of the lower electrode and covering the MTJ element therewith. As the MTJ's upper insulating film, a compressive stress insulating film or a tensile stress insulating film for applying a compressive stress or a tensile stress to the MTJ element is employed.07-07-2011
20110163402MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.07-07-2011
20110163400FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT - In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer.07-07-2011
20100320551Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof - A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.12-23-2010
20100320550Spin-Torque Magnetoresistive Structures with Bilayer Free Layer - Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.12-23-2010
20110084348MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art.04-14-2011
20110133299Magnetic Tunnel Junction Device - A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.06-09-2011
20100181633Magnetic Memory Device - A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.07-22-2010
20110254112SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes a semiconductor substrate, and plural switching transistors provided on the semiconductor substrate. A contact plug is embedded between the adjacent two switching transistors described above, is insulated from gates of the adjacent two switching transistors, and is electrically connected to diffusion layers of the adjacent two switching transistors. An upper connector is formed on the contact plug, and an upper surface is at a position higher than upper surfaces of the switching transistors. A memory element is provided on the upper surface of the upper connector, and stores data. A wiring is provided on the memory element.10-20-2011
20110133300Bottom electrode for MRAM device - A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.06-09-2011
20120146168MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.06-14-2012
20100059837Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same - A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.03-11-2010
20080217710Novel SyAF structure to fabricate Mbit MTJ MRAM - A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm09-11-2008
20110260274MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS - A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.10-27-2011
20110260273MAGNETIC MEMORY DEVICE AND MAGNETIC RANDOM ACCESS MEMORY - A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.10-27-2011
20110260271SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a semiconductor device causing less peeling between an insulating film having on the top surface thereof a strap line and a wiring formed on the bottom surface of the insulating film, and a manufacturing method of the semiconductor device. The semiconductor device according to the invention has a semiconductor substrate, first wiring layers formed over the semiconductor substrate and having a peripheral wiring and a first wiring, a second wiring layer formed over the first wiring layers and having a second wiring, and a third wiring layer formed over the second wiring layer and having a magnetic storage element. The diffusion preventive films formed over the first wiring are each comprised of a SiCN film or an SiC film and the diffusion preventive film formed over the second wiring is comprised of SiN.10-27-2011
20110260270MR enhancing layer (MREL) for spintronic devices - The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as API, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.10-27-2011
20090174016MAGNETIC MEMORY DEVICE - A magnetic memory device is provided in which, even when a recording layer having an asymmetric shape and a local via are formed over a strap wiring with a sufficient distance allowed therebetween, increase in the size of the magnetic memory device can be suppressed. The magnetic memory device includes the strap wiring, the local via, and a magnetic recording element (TMR element). The TMR element includes a fixed layer and the recording layer. The planar shape of the recording layer is asymmetric with respect to the direction of the easy magnetization axis of the recording layer and is symmetric with respect to the axis of symmetry perpendicular to the easy magnetization axis. The contoured portion of the recording layer on the side closer to the center of area of the recording layer is opposed to the local via formation side.07-09-2009
20120146164MAGNETIC FIELD CURRENT SENSORS - Embodiments relate to magnetic field current sensors. In an embodiment, a magnetic field current sensor includes a semiconductor die having first and second opposing surfaces and comprising at least one magnetic field sensing element; and a unitary conductor comprising a footprint portion, first and second pillar portions, and first and second contact portions, the first pillar portion having a first height and coupling the first contact portion to the footprint portion, the second pillar portion having the first height and coupling the second contact portion to the footprint portion, the first height being a monotonic vertical dimension separating the footprint portion from the first and second contact portions, and the footprint portion coupling the conductor to the first surface of the die such that the footprint portion is substantially parallel to the first surface of the die and within a perimeter of the first surface and the first and second contacts portions are closer to the first surface than the second surface.06-14-2012
20110147866SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.06-23-2011
20120205761Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability - A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.08-16-2012
20120205758Magnetic element with improved out-of-plane anisotropy for spintronic applications - A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co08-16-2012
20120205759MAGNETIC TUNNEL JUNCTION WITH SPACER LAYER FOR SPIN TORQUE SWITCHED MRAM - A magnetic tunnel junction (MTJ) includes first and second magnetic layers; a tunnel barrier located between the first and second magnetic layers; a first spacer layer located between the first magnetic layer and the tunnel barrier, the first spacer layer comprising a non-magnetic material; and a first interfacial layer located between the first spacer layer and the tunnel barrier.08-16-2012
20120205757Pinning field in MR devices despite higher annealing temperature - The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.08-16-2012
20120306033VIALESS MEMORY STRUCTURE AND METHOD OF MANUFACTURING SAME - A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.12-06-2012
20120306034Magnetoresistive Device - A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the free magnetic layer structure and either one of the first fixed magnetic layer structure or the second fixed magnetic layer structure. The respective magnetization orientations of the first and the second fixed magnetic layer structures are oriented anti-parallel to each other, and the first fixed magnetic layer structure is a static fixed magnetic layer structure having a switching field that is larger than a switching field of the free magnetic layer structure.12-06-2012
20120146165MAGNETIC FIELD CURRENT SENSORS - Embodiments relate to magnetic field current sensors. In an embodiment, a method of forming a conductor clip for a magnetic field current sensor comprises forming a footprint portion; forming first and second contact portions; and forming first and second pillar portions coupling the first and second contact portions, respectively, to the footprint portion, the first and second pillar portions having a constant height and being at approximate right angles to the first and second contact portions and the footprint portion.06-14-2012
20120146166MAGNETIC RANDOM ACCESS MEMORY CELLS HAVING IMPROVED SIZE AND SHAPE CHARACTERISTICS - A manufacturing method to form a memory device includes: (1) forming a dielectric layer adjacent to a magnetic stack; (2) forming an opening in the dielectric layer; (3) applying a hard mask material adjacent to the dielectric layer to form a pillar disposed in the opening of the dielectric layer; and (4) using the pillar as a hard mask, patterning the magnetic stack to form a MRAM cell.06-14-2012
20120038011MAGNETIC TUNNELING JUNCTION DEVICE AND ITS MANUFACTURING METHOD - A magnetic pinned layer is formed over a substrate. An insulating film is formed over the magnetic pinned layer. A recess is formed in and through the insulating film. A tunneling insulating film is formed over a bottom of the recess. A first magnetic free layer is formed over the bottom of the recess via the tunneling insulating film. A second magnetic free layer is formed over the insulating film and made of a same material as the first magnetic free layer. A non-magnetic film is formed on sidewalls of the recess, extending from the first magnetic free layer to the second magnetic free layer and made of oxide of the material of the first magnetic free layer. An upper electrode is disposed over the first magnetic free layer, non-magnetic film and second magnetic free layer, and electrically connected to the first magnetic free layer and second magnetic free layer.02-16-2012
20120038012TMR device with novel free layer structure - A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1+1002-16-2012
20110316104MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY - It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.12-29-2011
20110316103STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY - Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.12-29-2011
20110316102STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.12-29-2011
20110012215SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION - A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.01-20-2011
20110101476ELECTRONIC DEVICE, MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME - Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.05-05-2011
20120043630SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been used widely to secure reliability of a high reliability product. There is a high possibility of MRAM being mounted in high reliability products so that reliability is important. Clad wiring however increases the resistance of the CuAl wiring, which is originally high, so that using both may fail to satisfy the specification of the wiring resistance. In the semiconductor device of the invention having plural copper-embedded wiring layers, copper wiring films of plural copper-embedded clad wirings configuring a memory cell matrix region of MRAM are made of relatively pure copper, while a CuAl wiring film is used as copper wiring films of copper-embedded non-clad wirings below these wiring layers.02-23-2012
20120061783MEMORY CELL WITH RADIAL BARRIER - Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.03-15-2012
20120061780STORAGE ELEMENT AND MEMORY DEVICE - Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.03-15-2012
20120205762MAGNETIC TUNNEL JUNCTION DEVICE - The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.08-16-2012
20120001280Hall sensor - Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. The Hall element includes: a Hall sensing portion having a shape of a cross and four convex portions; Hall voltage output terminals which are arranged at the centers of the front edges of the four convex portions, respectively; and control current input terminals which are arranged on side surfaces of each of the convex portions independently of the Hall voltage output terminals. In this case, the Hall voltage output terminal has a small width and the control current input terminal has a large width.01-05-2012
20120001281MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY - Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.01-05-2012
20120001279Hall sensor - Provided is a highly-sensitive Hall element capable of eliminating an offset voltage without increasing the chip size. At the four vertices of a square Hall sensing portion, Hall voltage output terminals and control current input terminals are respectively arranged independently from each other. The Hall voltage output terminals all have the same shape. The control current input terminals are arranged on both sides of the Hall voltage output terminals, respectively, to be spaced apart from the Hall voltage output terminals so as to prevent electrical connection to the Hall voltage output terminals, and have the same shape at the four vertices.01-05-2012
20110156182SEMICONDUCTOR DEVICE - To provide a semiconductor device capable of further suppressing the leakage of magnetic field in a magnetoresistive element and capable of further improving performance.06-30-2011
20110156181SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device is provided which can further suppress the leakage of a magnetic field in a magnetoresistive element, and which can further improve the performance of the semiconductor device. A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over a main surface of the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the other main surface opposite to one main surface of the free layer opposed to the tunneling insulating film. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer included in the magnetoresistive element is a layer which is disposed over one main surface of the lower electrode, and whose magnetization direction is fixed. The tunneling insulating film is disposed over the other main surface opposite to one main surface of the fixed layer opposed to the lower electrode. The free layer is a layer which is disposed over the other main surface opposite to one main surface of the tunneling insulating film opposed to the fixed layer, and whose magnetization direction is variable. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer in the direction intersecting the lamination direction of the lower electrode, the fixed layer 06-30-2011
20120056286MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.03-08-2012
20120056284MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.03-08-2012
20120056283MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.03-08-2012
20120061784MAGNETIC RECORDING DEVICE AND MAGNETIC RECORDING APPARATUS - An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.03-15-2012
20120007196MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive random access memory includes a magnetoresistive element in a memory cell, the magnetoresistive element including a first metal magnetic layer, a second metal magnetic layer, and an insulation layer interposed between the first and second metal magnetic layers. An area of each of the first and second metal magnetic layers is smaller than an area of the insulation layer.01-12-2012
20120205763NON-VOLATILE MAGNETIC MEMORY WITH LOW SWITCHING CURRENT AND HIGH THERMAL STABILITY - A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.08-16-2012
20120012954MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (01-19-2012
20120012952Magnetic Storage Element Utilizing Improved Pinned Layer Stack - A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.01-19-2012
20120012955MAGNETIC MEMORY - Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression M01-19-2012
20110049659MAGNETIZATION CONTROL METHOD, INFORMATION STORAGE METHOD, INFORMATION STORAGE ELEMENT, AND MAGNETIC FUNCTION ELEMENT - The present invention provides a magnetization control method controlling, utilizing no current-induced magnetic field or spin transfer torque a magnetization direction with low power consumption, an information storage method, an information storage element, and a magnetic function element. The magnetization control method involves controlling a magnetization direction of a magnetic layer, and includes: forming a structure including (i) the magnetic layer which is an ultrathin film ferromagnetic layer having a film thickness of one or more atomic layers and of 2 nm or less, and (ii) an insulating layer provided on the ultrathin film ferromagnetic layer and working as a potential barrier; and controlling a magnetization direction of the ultrathin film ferromagnetic layer by applying either (i) a voltage to opposing electrodes sandwiching the structure and a base layer or (ii) an electric field to the structure to change magnetic anisotropy of the ultrathin film ferromagnetic layer. The magnetization control method further involves controlling a waveform of the applied voltage or the applied electric field to switch the magnetization direction.03-03-2011
20110049658MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER - Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.03-03-2011
20110049657SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.03-03-2011
20110049655PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY - A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.03-03-2011
20110049654Magnetic Tunnel Junction Device and Fabrication - A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming an MTJ cap layer on an MTJ structure and forming a top electrode layer over the MTJ cap layer. The top electrode layer includes a first nitrified metal.03-03-2011
20120112296Semiconductor Inductor with a Serpentine Shaped Conductive Wire and a Serpentine Shaped Ferromagnetic Core and a Method of Forming the Semiconductor Inductor - The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.05-10-2012
20120112295METHOD AND SYSTEM FOR PROVIDING HYBRID MAGNETIC TUNNELING JUNCTION ELEMENTS WITH IMPROVED SWITCHING - A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.05-10-2012
20120025338Non-Volatile Magnetic Memory Element with Graded Layer - A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.02-02-2012
20120025339MAGNETIC MEMORY WITH STRAIN-ASSISTED EXCHANGE COUPLING SWITCH - A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.02-02-2012
20120061782SPIN WAVE DEVICE - A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.03-15-2012
20120061781MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes Fe03-15-2012
20120061779MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.03-15-2012
20080308886Semiconductor Sensor - This application relates to a semiconductor sensor comprising a carrier that comprises a first surface and a second surface; a sensor chip attached to the first surface; attachment means on the second surface; and mould material applied over the sensor chip and the attachment means.12-18-2008
20120280340MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A memory device includes a lower electrode formed on a substrate, and an information storage unit formed on the lower electrode. The information storage unit includes a plurality of information storage layers spaced apart from one another. Each of the plurality of information storage layers is an information unit. A method of manufacturing a memory device uses a porous film to form the plurality of information storage layers.11-08-2012
20120205760MAGNETIC RANDOM ACCESS MEMORY WITH FIELD COMPENSATING LAYER AND MULTI-LEVEL CELL - A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.08-16-2012
20120104522MAGNETIC TUNNEL JUNCTION CELLS HAVING PERPENDICULAR ANISOTROPY AND ENHANCEMENT LAYER - A magnetic tunnel junction cell that includes a ferromagnetic free layer; an enhancement layer having a thickness of at least about 15 Å; an oxide barrier layer; and a ferromagnetic reference layer, wherein the enhancement layer and the oxide barrier layer are positioned between the ferromagnetic reference layer and ferromagnetic free layer and the oxide barrier layer is positioned adjacent the ferromagnetic reference layer, and wherein the ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer all have magnetization orientations that are out-of-plane05-03-2012
20120153413Non-Volatile Memory Cell with Lateral Pinning - An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.06-21-2012
20120153412WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES - The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.06-21-2012
20120153411SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY IN DISK BASE WITH REDUCED THRESHOLD CURRENT - A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.06-21-2012
20100096716SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY HAVING MAGNETIC TUNNEL JUNCTION WITH PERPENDICULAR MAGNETIC ANISOTROPY - A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.04-22-2010
20110089510MAGNETIC MEMORY CELL CONSTRUCTION - A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.04-21-2011
20110089509MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS - Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.04-21-2011
20110089508MAGNETIC TUNNEL JUNCTION STRUCTURE WITH PERPENDICULAR MAGNETIZATION LAYERS - Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.04-21-2011
20120211846MRAM DEVICE AND METHOD OF ASSEMBLING SAME - A method of assembling a magnetoresistive random access memory (MRAM) device includes providing a substrate having an opening. A tape is applied to a surface of the substrate and a first magnetic shield is placed onto the tape and within the substrate opening. An adhesive is applied between the first magnetic shield and the substrate to attach the first magnetic shield to the substrate. An MRAM die is attached to the first magnetic shield and bond pads of the MRAM die are connected to pads on the substrate with wires. A second magnetic shield is attached to a top surface of the MRAM die. An encapsulating material is dispensed onto the substrate, the MRAM die, the second magnetic shield and part of the first magnetic shield, cured, and then the tape is removed. Solder balls then may be attached to the substrate.08-23-2012
20120161261MAGNETIC PHASE CHANGE LOGIC - Provided are transistor devices such as logic gates that are capable of associating a computational state and or performing logic operations with detectable electronic spin state and or magnetic state. Methods of operating transistor devices employing magnetic states are provided. Devices comprise input and output structures and magnetic films capable of being converted between magnetic states.06-28-2012
20120126353Magnetic Memory Device - A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.05-24-2012
20110001203MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.01-06-2011
20100207221Magnetic Random Access Memory - A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure.08-19-2010
20100207219SINGLE LINE MRAM - A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.08-19-2010
20120133008SPIN-INJECTION ELEMENT, AND MAGNETIC FIELD SENSOR AND MAGNETIC RECORDING MEMORY EMPLOYING THE SAME - Provided are a spin-injection element having high spin-injection efficiency, and a magnetic field sensor and a magnetic recording memory employing the element. The element comprises a barrier layer, a magnetic conductive layer, and a spin accumulation portion comprised of non-magnetic conductive material. In the element, a first spin accumulation layer (05-31-2012
20120133007MAGNETIZATION REVERSAL DEVICE, MEMORY ELEMENT, AND MAGNETIC FIELD GENERATION DEVICE - A magnetization reversal device includes a ferromagnetic 05-31-2012
20110180888MAGNETIC STACK DESIGN - A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.07-28-2011
20120313192MAGNETIC STICK AND MEMORY CELL COMPRISING SUCH A STACK - A magnetic stack with out of plane magnetisation, the magnetic stack including: a first magnetic layer constituted of one or more materials selected from the following group: cobalt, iron and nickel and magnetic alloys based on the materials; a second layer constituted of a metallic material able to confer to an assembly formed by the first and the second layers a perpendicular anisotropy of interfacial origin when the second layer has a shared interface with the first layer; and a third layer deposited on the first layer, the second layer being deposited on the third layer, the third layer being constituted of a metallic material having a miscibility less than 10% with the material of the first layer.12-13-2012
20120313191SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME - A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.12-13-2012
20120248557CONFINED CELL STRUCTURES AND METHODS OF FORMING CONFINED CELL STRUCTURES - Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.10-04-2012
20090057794Planar flux concentrator for MRAM devices - The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.03-05-2009
20090057793SPIN TRANSISTOR AND METHOD OF MANUFACTURING SAME - The spin transistor in accordance with the present invention comprises a magnetoresistive element having a fixed layer, a free layer, and a semiconductor layer provided between the fixed layer and free layer; a source electrode layer electrically connected to one end face in a laminating direction of the magnetoresistive element; a drain electrode layer electrically connected to the other end face in the laminating direction of the magnetoresistive element; and a gate electrode layer laterally adjacent to the semiconductor layer through a gate insulating layer provided on a side face of the semiconductor layer.03-05-2009
20120168887Magnetic Memory Devices and Methods of Forming the Same - Provided are a magnetic memory device and a method of forming the same. The method may include forming a pinning pattern on a substrate; forming a first interlayer insulating layer that exposes the pinning pattern on the substrate; forming a pinned layer, a tunneling barrier layer and a second magnetic conductive layer on the pinning pattern; and forming a pinned pattern, a tunnel barrier pattern and a second magnetic conductive pattern by performing a patterning process on the pinned layer, the tunnel barrier layer and the second magnetic conductive layer.07-05-2012
20120168886METHOD FOR FABRICATING A MICROSWITCH ACTUATABLE BY A MAGNETIC FIELD - The invention concerns a method for the fabrication, on a plane substrate, of a microswitch actuatable by a magnetic field, comprising: 07-05-2012
20120211847SEMICONDUCTOR DEVICE INCLUDING A MAGNETIC TUNNEL JUNCTION AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device that has an improved adhesion between a bottom conductive layer and a protection film protecting an MTJ element.08-23-2012
20120168885METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES - A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.07-05-2012
20120248558STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME - A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.10-04-2012
20120248556THREE-DIMENSIONAL MAGNETIC CIRCUITS INCLUDING MAGNETIC CONNECTORS - A device including at least two spintronic devices and a method of making the same. A magnetic connector extends between the two spintronic devices to conduct a magnetization between the two. The magnetic connector may further be disposed to conduct current to switch a magnetization of one of the two spintronic devices.10-04-2012
20100276771MAGNETORESISTANCE DEVICE INCLUDING LAYERED FERROMAGNETIC STRUCTURE, AND METHOD OF MANUFACTURING THE SAME - A layered ferromagnetic structure is composed of a first ferromagnetic layer positioned over a substrate; a second ferromagnetic layer positioned over the first ferromagnetic layer; and a first non-magnetic layer placed between the first and second ferromagnetic layers. The top surface of the first ferromagnetic layer is in contact with the first non-magnetic layer. The first ferromagnetic layer includes a first orientation control buffer that exhibits an effect of enhancing crystalline orientation of a film formed thereon.11-04-2010
20090096044Spin-Wave Architectures - Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and multi-scale computational architectures comprised of a plurality of inputs and a plurality of outputs are described where such devices are configured to simultaneously transmit data elements from the inputs to the outputs by using spin-waves of differing frequencies. These devices include but are not limited to a spin-wave crossbar, a spin-wave reconfigurable mesh, a spin-wave fully-interconnected cluster, a hierarchical multi-scale spin-wave crossbar, a hierarchical multi-scale spin-wave reconfigurable mesh and a hierarchical multi-scale spin-wave fully-interconnected cluster.04-16-2009
20120175717STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide.07-12-2012
20120175716STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.07-12-2012
20120175718BIPOLAR SELECT DEVICE FOR RESISTIVE SENSE MEMORY - A resistive sense memory apparatus includes a bipolar select device having a semiconductor substrate, a plurality of collector contacts disposed in a first side of the of the semiconductor substrate, an emitter contact layer disposed in a second side of the semiconductor substrate, and a base layer separating the plurality of collector contacts from the emitter contact layer. Each collector contact is electrically isolated from each other. A resistive sense memory cells is electrically coupled to each collector contacts and a bit line. The base layer and the emitter contact layer provide an electrical path for the plurality of collector contacts.07-12-2012
20100038735MAGNET-ASSISTED TRANSISTOR DEVICES - A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.02-18-2010
20100270634SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention makes it possible to obtain: a semiconductor device capable of forming a highly reliable upper wire without a harmful influence on the properties of the magnetic material for an MTJ device; and the manufacturing method thereof. Plasma treatment is applied with reducible NH10-28-2010
20100270633NONVOLATILE MEMORY DEVICE - Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.10-28-2010
20120217599MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES - A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.08-30-2012
20120217595MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) - A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.08-30-2012
20100006960Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current - A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×1001-14-2010
20120228729STAGGERED MAGNETIC TUNNEL JUNCTION - A staggered magnetic tunnel junction includes a free magnetic layer extending in a lateral direction between a first end portion and an opposing second end portion and a tunneling barrier disposed between a reference magnetic layer and the first end portion and forming a magnetic tunnel junction. Current flows through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.09-13-2012
20110121419METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE - A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.05-26-2011
20110121418MRAM Cells Including Coupled Free Ferromagnetic Layers for Stabilization - A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.05-26-2011
20110121417Magnetic Tunnel Junction Device and Fabrication - A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction structure above a bottom electrode. The method also includes forming a diffusion barrier layer above and adjacent to the magnetic tunnel junction structure. The method further includes etching back the diffusion barrier layer, removing the diffusion barrier layer above the magnetic tunnel junction structure. The method also includes connecting a top of the magnetic tunnel junction structure to a conductive layer.05-26-2011
20080296710Photoconductive Metamaterials with Tunable Index of Refraction - Materials and structures whose index of refraction can be tuned over a broad range of negative and positive values by applying above band-gap photons to a structure with a strip line element, a split ring resonator element, and a substrate, at least one of which is a photoconductive semiconductor material. Methods for switching between positive and negative values of n include applying above band-gap photons to different numbers of elements. In another embodiment, a structure includes a photoconductive semiconductor wafer, the wafer operable to receive above band-gap photons at an excitation frequency in an excitation pattern on a surface of the wafer, the excitation patterns generating an effective negative index of refraction. Methods for switching between positive and negative values of n include projecting different numbers of elements on the wafer. The resonant frequency of the structure is tuned by changing the size of the split ring resonator excitation patterns.12-04-2008
20120261777Magnetoresistive Element and Method of Manufacturing the Same - A magnetoresistive element (and method of fabricating the magnetoresistive element) that includes a free ferromagnetic layer comprising a first reversible magnetization direction directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a second fixed magnetization direction directed substantially perpendicular to the film surface, and a nonmagnetic insulating tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer, wherein the free ferromagnetic layer, the tunnel barrier layer, and the pinned ferromagnetic layer have a coherent body-centered cubic (bcc) structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses the magnetization direction of the free ferromagnetic layer.10-18-2012
20120261776METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.10-18-2012
20120261778SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME - Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.10-18-2012
20120299137SEED LAYER AND FREE MAGNETIC LAYER FOR PERPINDICULAR ANISOTROPY IN A SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.11-29-2012
20120299135NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES - An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.11-29-2012
20120299134Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)11-29-2012
20120299133MAGNETIC DEVICES AND METHODS OF FABRICATING THE SAME - Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic pattern. An edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern. The central portion of the tunnel barrier pattern has a substantially uniform thickness.11-29-2012
20120299132TUNNELING MAGNETORESISTANCE (TMR) READ SENSOR WITH LOW-CONTACT-RESISTANCE INTERFACES - The invention provides a TMR read sensor with low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces. The low-contact-resistance metal/metal interfaces in a reference or sense layer structure are in-situ formed in a high-vacuum deposition module of a sputtering system, without exposures to low vacuum in a transfer module and damages caused by a plasma treatment conducted in an etching module. The low-contact-resistance metal/oxide interface is formed by utilizing a thin Co—Fe—B reference layer and a thick Co—Fe reference layer to reduce boron diffusion and segregation caused by annealing. The low-contact-resistance oxide/metal interface is formed by replacing a Co—Fe—B sense layer with a Co-rich Co—Fe sense layer to eliminate boron diffusion and segregation caused by annealing. With the low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces, the TMR read sensor exhibits a junction resistance-area product of below 0.6 Ω-μm11-29-2012
20110001202FORMING INDUCTOR AND TRANSFORMER STRUCTURES WITH MAGNETIC MATERIALS USING DAMASCENE PROCESSING FOR INTEGRATED CIRCUITS - Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.01-06-2011
20120267735Planar Multiferroic/Magnetostrictive Nanostructures as Memory Elements, Two-Stage Logic Gates and Four-State Logic Elements for Information Processing - A magnetostrictive-piezoelectric multiferroic single- or multi-domain nanomagnet whose magnetization can be rotated through application of an electric field across the piezoelectric layer has a structure that can include either a shape-anisotropic mangnetostrictive nanomagnet with no magnetocrystalline anisotropy or a circular nanomagnet with biaxial magnetocrystalline anisotropy with dimensions of nominal diameter and thickness. This structure can be used to write and store binary bits encoded in the magnetization orientation, thereby functioning as a memory element, or perform both Boolean and non-Boolean computation, or be integrated with existing magnetic tunneling junction (MTJ) technology to perform a read operation by adding a barrier layer for the MTJ having a high coercivity to serve as the hard magnetic layer of the MTJ, and electrical contact layers of a soft material with small Young's modulus. Equivalently, mangnetostrictive nanomagnetic elements whose magnetization is rotated by strain transferred from the substrate that has acoustic waves propagating on the substrate can be used.10-25-2012
20120267734SPIN TRANSPORT DEVICE - A spin transport device includes a semiconductor layer 10-25-2012
20120267733MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY - A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.10-25-2012
20110227179MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.09-22-2011
20120126352METHOD FOR MANUFACTURING SEMICONDUCTOR CHIPS, MOUNTING METHOD AND SEMICONDUCTOR CHIP FOR VERTICAL MOUNTING ONTO CIRCUIT SUBSTRATES - A semiconductor chip having contact surfaces on an upper side parallel to the wafer plane has terminal pads on a terminal-pad side perpendicular to the upper side, each terminal pad being conductively connected to an assigned contact surface. This allows vertical mounting of the chip on a substrate and contacting with the aid of customary bonding techniques. A manufacturing method and two mounting methods are described.05-24-2012
20090261433One-Mask MTJ Integration for STT MRAM - A method for integrating a magnetic tunnel junction (MTJ) device into an integrated circuit includes providing in a semiconductor back-end-of-line (BEOL) process flow a substrate having a first interlevel dielectric layer and at least a first metal interconnect. Over the first interlevel dielectric layer and the first metal interconnect, magnetic tunnel junction material layers are deposited. From the material layers a magnetic tunnel junction stack, coupled to the first metal interconnect, is defined using a single mask process. The magnetic tunnel junction stack is integrated into the integrated circuit.10-22-2009
20110254114MAGNETORESISTIVE EFFECT ELEMENT - A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.10-20-2011
20100230769Magnetoresistive element, magnetic random access memory and method of manufacturing the same - A magnetoresistive element includes: a lower magnetic layer; a barrier layer; and an upper magnetic layer. The barrier layer is provided on the lower magnetic layer. The upper magnetic layer is provided on the barrier layer. One of magnetization directions of the lower magnetic layer and the upper magnetic layer is fixed. The barrier layer has a first surface which includes a surface contacted with an upper surface of the lower magnetic layer. The upper magnetic layer has a second surface which includes a surface contacted with an upper surface of the barrier layer. Each of the first surface and the second surface is larger than the upper surface of the lower magnetic layer in area.09-16-2010
20120326250SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY - Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.12-27-2012
20120326254MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.12-27-2012
20120326252SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on a semiconductor substrate, the first magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; a non-magnetic layer formed on the first magnetic layer; a second magnetic layer formed on the non-magnetic layer, the second magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; and a sidewall film provided so as to cover a sidewall of each of the magneto-resistance elements with a protective film interposed therebetween, the sidewall film providing a tensile stress to the magneto-resistance element along the easy axis of magnetization.12-27-2012
20120280336Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications - A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.11-08-2012
20120280339PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER - A STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.11-08-2012
20120280337Composite free layer within magnetic tunnel junction for MRAM applications - A MTJ in an MRAM array is disclosed with a composite free layer having a FL1/FL2/FL3 configuration where FL1 and FL2 are crystalline magnetic layers and FL3 is an amorphous NiFeX layer for improved bit switching performance. FL1 layer is CoFe which affords a high magnetoresistive (MR) ratio when forming an interface with a MgO tunnel barrier. FL2 is Fe to improve switching performance. NiFeX thickness where X is Hf is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. Annealing at 330° C. to 360° C. provides a high MR ratio of 190%. Furthermore, low Hc and Hk are simultaneously achieved with improved bit switching performance and fewer shorts without compromising other MTJ properties such as MR ratio. As a result of high MR ratio and lower bit-to-bit resistance variation, higher reading margin is realized.11-08-2012
20110298067MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent to the magnetic insertion layer and opposite to the non-magnetic insertion layer with respect to the magnetic insertion layer; and a first magnetization fixed layer provided adjacent to the spacer layer and opposite to the magnetic insertion layer with respect to the spacer layer. The magnetization free layer and the first magnetization fixed layer have magnetization components in directions approximately perpendicular to a film surface. The magnetization free layer includes two magnetization fixed portions and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetization of one of the two magnetization fixed portions and magnetization of the other of the two magnetization fixed portions are fixed approximately anti-parallel to each other in a direction approximately perpendicular to a film surface. The domain wall motion portion has a magnetic anisotropy in a direction perpendicular to a film surface.12-08-2011
20120326251SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.12-27-2012
20120326253METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORIES - A method and system provide a magnetic junction. A free layer, a symmetry filter, and a pinned layer are provided. The free layer has a magnetic moment switchable between stable states when a write current is passed through the magnetic junction. The symmetry filter transmits charge carriers having a first symmetry with higher probability than charge carriers having another symmetry. The symmetry filter resides between the free layer and the pinned layer. The free layer and/or the pinned layer lies in a plane, has the charge carriers of the first symmetry in a spin channel at a Fermi level, lacks the charge carriers of the first symmetry at the Fermi level in another spin channel, and has a nonzero magnetic moment component perpendicular to the plane. The free layer and/or the pinned layer and the symmetry filter has at least one lattice mismatch of less than seven percent.12-27-2012
20120091548FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME - Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl04-19-2012
20120286382Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)11-15-2012
20130009259MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.01-10-2013
20130009261SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRICATING THE MEMORY ELEMENT - A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.01-10-2013
20130009260Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.01-10-2013
20130009258TUNNELING MAGNETORESISTANCE SENSOR - A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time.01-10-2013
20130015542MAGNETO-ELECTRONIC DEVICES AND METHODS OF PRODUCTION - A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the insulating layer. The first and second ferromagnetic layers have respective first and second magnetic anisotropies that are alignable substantially parallel to each other in a first state and substantially antiparallel in a second state of the electric-field-controllable magnetic tunnel junction.01-17-2013
20130015543MAGNETIC MEMORY CELL CONSTRUCTION - A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.01-17-2013
20130015540MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR FABRICATING THE SAMEAANM CHOI; Won JoonAACI SeoulAACO KRAAGP CHOI; Won Joon Seoul KR - A magnetic tunnel junction device includes a first electrode having a curved top surface, a magnetic tunnel junction layer formed along the top surface of the first electrode, and a second electrode formed on the magnetic tunnel junction layer.01-17-2013
20130015538MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MAKING THE SAMEAANM LIU; Ming-TeAACI TaipeiAACO TWAAGP LIU; Ming-Te Taipei TWAANM CHIANG; Tien-WeiAACI HsinchuAACO TWAAGP CHIANG; Tien-Wei Hsinchu TWAANM KAO; Ya-ChenAACI Fuxing TownshipAACO TWAAGP KAO; Ya-Chen Fuxing Township TWAANM CHEN; Wen-ChengAACI HsinchuAACO TWAAGP CHEN; Wen-Cheng Hsinchu TW - A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MIJ.01-17-2013
20130015539MAGNETIC MEMORY DEVICE HAVING INCREASED MARGIN IN THICKNESS OF MAGNETIC LAYERSAANM CHOI; Won JoonAACI Ichon-siAACO KRAAGP CHOI; Won Joon Ichon-si KR - A magnetic memory device capable of ensuring a constant TMR difference even when the margin in a thickness of a magnetic layer constituting a KO is small is provided. The magnetic memory device includes a first magnetic layer having a fixed magnetization direction, a magnetization fixing layer formed on the first magnetic layer, a tunnel barrier layer formed on the magnetization fixing layer, and a second magnetic layer formed on the tunnel barrier layer and having a changeable magnetization direction.01-17-2013
20130015541SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOFAANM KANAYA; HiroyukiAACI Yokohama-shiAACO JPAAGP KANAYA; Hiroyuki Yokohama-shi JP - A memory includes a semiconductor substrate. Cell transistors are on the substrate. Contact plugs each of which is buried between the adjacent cell transistors and electrically connected to a diffusion layer between the adjacent cell transistors. An interlayer dielectric film buries gaps between the contact plugs. A storage element is provided not above the contact plugs but above the interlayer dielectric film. A sidewall film covers a part of a side surface of the storage element, and is provided to overlap with one of the contact plugs as viewed from above a surface of the semiconductor substrate. A lower electrode is provided between a bottom of the storage element and the interlayer dielectric film and between the sidewall film and one of the contact plugs, and electrically connects the storage element to one of the contact plugs.01-17-2013
20130168787MAGNETIC SENSOR - A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness to be at a superparamagnetic range, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.07-04-2013
20120241884MAGNETIC MEMORY - According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm09-27-2012
20120241883SPIN TRANSPORT DEVICE AND MAGNETIC HEAD - The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor 09-27-2012
20120241881MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn09-27-2012
20120241879MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.09-27-2012
20130168786MAGNETIC SHIFT REGISTER WITH PINNING STRUCTURE - A magnetic shift register includes a first supporting layer, a second supporting layer, a first pinning material layer, and at least one magnetic memory track. The first supporting layer has trenches on a first surface extending along a first direction. The second supporting layer is filled in the trenches, wherein the first support layer and the second support layer have at least a portion substantially equal in height. The first pinning material layer is disposed between the first supporting layer and the second supporting layer, wherein a plurality of end surfaces of the first pinning material layer are exposed on the first surface. The magnetic memory track extending along a second direction on the first surface is disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same or perpendicular to the first direction.07-04-2013
20130168788TUNNELING MAGNETO-RESISTOR REFERENCE UNIT AND MAGNETIC FIELD SENSING CIRCUIT USING THE SAME - A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.07-04-2013
20130140659FLUX-CLOSED STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER - Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.06-06-2013
20130140660MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY - In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.06-06-2013
20130140661PEROVSKITE MANGANESE OXIDE THIN FILM AND MANUFACTURING METHOD THEREFOR - A perovskite manganese oxide thin film formed on a substrate that allows a first order phase transition and has A-site ordering. The thin film contains Ba and a rare earth element in the A sites of a perovskite crystal lattice and has an (m10) orientation for which m=2n, and 9≧n≧1. A method for manufacturing the film includes forming in a controlled atmosphere using laser ablation an atomic layer or thin film that assumes a pyramidal structure having oxygen-deficient sites in a plane containing the rare earth element and oxygen; and filling the oxygen-deficient sites with oxygen. The controlled atmosphere has an oxygen partial pressure controlled to a thermodynamically required value for creating oxygen deficiencies and contains a gas other than oxygen, and has a total pressure that is controlled to a value at which the A sites have a fixed compositional ratio.06-06-2013
20130119495MAGNETIC TUNNEL JUNCTION DEVICES HAVING MAGNETIC LAYERS FORMED ON COMPOSITE, OBLIQUELY DEPOSITED SEED LAYERS - Semiconductor stack structures such as magnetic tunnel junction structures having a magnetic free layer that is grown on composite, obliquely deposited seed layers to induce an increased in-plane magnetic anisotropy Hk of the magnetic free layer. In one aspect, a semiconductor device includes a composite seed layer formed on a substrate, and a magnetic layer formed on the composite seed layer. The composite seed layer includes a first seed layer obliquely formed with an incident angle from a surface normal of the substrate along a first direction of the substrate, and a second seed layer obliquely formed with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction.05-16-2013
20110260272Magnetic Memory Device - A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.10-27-2011
20130200476Memory Cell with Phonon-Blocking Insulating Layer - An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.08-08-2013
20130181304METHODS AND APPARATUS FOR MAGNETIC SENSOR HAVING NON-CONDUCTIVE DIE PADDLE - Methods and apparatus to provide an integrated circuit package having a conductive leadframe, a non-conductive die paddle mechanically coupled to the leadframe, and a die disposed on the die paddle and electrically connected to the leadframe. With this arrangement, eddy currents are reduced near the magnetic field transducer to reduce interference with magnetic fields.07-18-2013
20130181305MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having changeable magnetization substantially perpendicular to a film plane; a second ferromagnetic layer having fixed magnetization substantially perpendicular to the film plane; a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on the opposite side of the second ferromagnetic layer from the first nonmagnetic layer, the third ferromagnetic layer having magnetization substantially parallel to the film plane, the third ferromagnetic layer generating a rotating magnetic field when spin-polarized electrons are injected thereinto; and a second nonmagnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer.07-18-2013
20130181306NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION - A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.07-18-2013
20080217711Vertical Spin Transistor and Method of Manufacturing the Same - A vertical spin transistor according to an embodiment of the present invention includes: a first source/drain layer including a layer formed of magnetic material; a protruding structure including, a channel layer formed on the first source/drain layer and including a layer formed of semiconductor, and a second source/drain layer formed on the channel layer and including a layer formed of magnetic material; a gate insulating film formed on a side of the channel layer; and a gate electrode formed on a surface of the gate insulating film.09-11-2008
20130134533MAGNETIC TUNNEL JUNCTION (MTJ) AND METHODS, AND MAGNETIC RANDOM ACCESS MEMORY (MRAM) EMPLOYING SAME - Magnetic tunnel junctions (MTJs) and methods of forming same are disclosed. A pinned layer is disposed in the MTJ such that a free layer of the MTJ can couple to a drain of an access transistor when provided in a magnetic random access memory (MRAM) bitcell. This structure alters the write current flow direction to align the write current characteristics of the MTJ with write current supply capability of an MRAM bitcell employing the MTJ. As a result, more write current can be provided to switch the MTJ from a parallel (P) to anti-parallel (AP) state. An anti-ferromagnetic material (AFM) layer is provided on the pinned layer to fix pinned layer magnetization. To provide enough area for depositing the AFM layer to secure pinned layer magnetization, a pinned layer having a pinned layer surface area greater than a free layer surface area of the free layer is provided.05-30-2013
20130093032SEMICONDUCTOR TRENCH INDUCTORS AND TRANSFORMERS - Semiconductor trench inductor and transformer structures are provided, which include thin film conductive layers and magnetic layers formed within trenches etched in semiconductor substrates. Semiconductor trench devices effectively provide vertical oriented inductor and transformer structures whereby conductive coils and magnetic layers are vertically oriented on edge within trenches, thereby providing a space-saving compact design, and which allows the conductive layers within the trench to be enclosed by magnetic material, thereby providing a density of magnetic material that increases the storable energy density.04-18-2013
20130099337MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.04-25-2013
20130099338MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.04-25-2013
20130099334Z-Axis Semiconductor Fluxgate Magnetometer - A z-axis fluxgate magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the fluxgate magnetometer. The semiconductor wafer fabrication sequence forms a vertical magnetic core structure, a first wire structure wound around the magnetic core structure, and a second wire structure wound around the magnetic core structure.04-25-2013
20130099335Novel Magnetic Tunnel Junction Device And Its Fabricating Method - Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.04-25-2013
20130099336MAGNETIC TUNNEL JUNCTION DEVICE AND ITS FABRICATING METHOD - The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.04-25-2013
20100019331HALL-EFFECT MAGNETIC SENSORS WITH IMPROVED MAGNETIC RESPONSIVITY AND METHODS FOR MANUFACTURING THE SAME - A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.01-28-2010
20110266642METHOD FOR PRODUCING A MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNEL JUNCTION THUS OBTAINED - According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.11-03-2011
20110272770METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE, AND MAGNETIC STORAGE DEVICE - A lower conductive film is formed over a substrate. A first insulating film is formed in the lower conductive film. An opening which reaches the lower conductive film is formed in the first insulating film. An MTJ multilayer film having a magnetization free layer, a tunnel barrier layer and a magnetization fixed layer is deposited over the lower conductive film in the opening and over the first insulating film. An upper electrode is formed over the MTJ multilayer film. By removing the portion of the MTJ multilayer film deposited over the first insulating film, an MTJ device composed of the portion of the MTJ multilayer film which has remained in the opening is formed. A lower electrode composed of the lower conductive film is formed under the MTJ device by removing at least a part of the first insulating film, and a part of the lower conductive film.11-10-2011
20130187247MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING SAME - A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the free magnetic layer. Also a method of forming an STT-MTJ memory.07-25-2013
20130134534Magnetoresistive Device - According to embodiments of the present invention, a magnetoresistive device having a magnetic junction is provided. The magnetic junction includes at least one fixed magnetic layer structure having a fixed magnetization orientation; and at least two free magnetic layer structures, each of the at least two free magnetic layer structures having a variable magnetization orientation; wherein the at least one fixed magnetic layer structure overlaps with the at least two free magnetic layer structures such that a current flow is possible through the magnetic junction; and wherein the at least one fixed magnetic layer structure and the at least two free magnetic layer structures are respectively configured such that the fixed magnetization orientation and the variable magnetization orientation are oriented in a direction substantially perpendicular to a plane defined by an interface between the at least one fixed magnetic layer structure and either one of the at least two free magnetic layer structures.05-30-2013
20130134532MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.05-30-2013
20130140658MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.06-06-2013
20130140657MAGNETIC MEMORY DEVICES INCLUDING FREE MAGNETIC LAYER HAVING THREE-DIMENSIONAL STRUCTURE - Magnetic memory devices including a free magnetic layer having a three-dimensional structure, include a switching device and a magnetic tunnel junction (MTJ) cell connected thereto. The MTJ cell includes a lower magnetic layer, a tunnel barrier layer, and a free magnetic layer, which are sequentially stacked. A portion of the free magnetic layer protrudes in a direction away from an upper surface of the tunnel barrier layer.06-06-2013
20080203503MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line, and running in a first direction in which the first bit line and the second bit line run, a first magnetoresistive effect element connected to the first bit line, a second magnetoresistive effect element connected to the second bit line, a first transistor connected in series with the first magnetoresistive effect element, and a second transistor connected in series with the second magnetoresistive effect element. A first cell having the first magnetoresistive effect element and the first transistor and a second cell having the second magnetoresistive effect element and the second transistor are connected together to the source line.08-28-2008
20130146996MAGNETIC DEVICE FABRICATION - The present disclosure provides for magnetic devices and methods of fabricating such a device. In one embodiment, a magnetic device includes a first elliptical pillar of first material layers; a second elliptical pillar concentrically disposed over the first elliptical pillar, the second elliptical pillar includes second material layers. The second elliptical pillar is smaller than the first elliptical pillar in size.06-13-2013
20130126996MAGNETIC MEMORY DEVICE - A magnetic memory device using magnetic resistance is provided. The magnetic memory device may include a magnetic memory layer comprising a plurality of magnetic layers; and a tunnel barrier layer provided between the plurality of magnetic layers; and a stress-generating layer for applying stress to the tunnel barrier layer.05-23-2013
20130126995SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor substrate device includes a plurality of memory elements formed on the top surface of a semiconductor substrate, interlayer insulating films buried between the adjacent memory elements, a protection film formed on sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements, and contacts formed in the interlayer insulating films. The protection film includes a first protection film formed on the sides of each of the memory elements and the top surface of the semiconductor substrate between the adjacent memory elements and a second protection film formed on the first protection film. The first protection film is made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film, and the second protection film is made of a boron film or a boron nitride film.05-23-2013
20130126997UNIDIRECTIONAL SPIN TORQUE TRANSFER MAGNETIC MEMORY CELL STRUCTURE - Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.05-23-2013
20130175647MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL - A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.07-11-2013
20130175646MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE - Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.07-11-2013
20130175645MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME - A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.07-11-2013
20130175644Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Composite Tunneling Barrier Layer - A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.07-11-2013
20080197434MAGNETIC MEMORY DEVICE - A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: 08-21-2008
20080197433MEMORY DEVICE AND MEMORY - Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer, in the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.08-21-2008
20080197432Microchip Assembly Produced by Transfer Molding - The invention relates to a microchip assembly and an associated general production process, wherein an originally unshaped first component (08-21-2008
20080197431Magnetic memory element and magnetic memory apparatus - A magnetic memory element includes a laminated construction of an electrode, a first pinned layer, a first intermediate layer, a first memory layer, a second intermediate layer, a second memory layer, a third intermediate layer, a second pinned layer and electrode. The magnetization direction of the first memory layer takes a first and a second directions and that of the second memory layer takes a third and a fourth directions corresponding to a value and polarity of a current between the electrodes. In response to the current, the second intermediate layer has an electric resistance higher than the first intermediate layer and than the third intermediate layer.08-21-2008
20130119498MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME - A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.05-16-2013
20120086089MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION - A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. A particular embodiment includes a magnetic tunnel junction structure above a bottom electrode. The particular embodiment further includes a portion of a diffusion barrier layer adjacent to the magnetic tunnel junction structure. A top of the magnetic tunnel junction structure is connected to a conductive layer.04-12-2012
20110233697MAGNETIC MEMORY - According to one embodiment, a magnetic memory according to an embodiment includes a magnetoresistive effect element and a fourth magnetic layer which is provided on the side surface of the magnetoresistive effect element via an insulating film. The magnetoresistive effect element has a first magnetic layer of which the magnetization direction is variable, a second magnetic layer of which the magnetization direction fixed, a third magnetic layer of which the magnetization direction parallel to a film plane is variable, and an intermediate layer between the first magnetic layer and the second magnetic layer. The fourth magnetic layer collects a magnetic field generated from the end of the third magnetic layer.09-29-2011
20110233696Perpendicular Magnetic Tunnel Junction Structure - In a particular illustrative embodiment, a method of fabricating a semiconductor device is disclosed that includes forming a metal layer over a device substrate, forming a via in contact with the metal layer, and adding a dielectric layer above the via. The method further includes etching a portion of the dielectric layer to form a trench area, and depositing a perpendicular magnetic tunnel junction (MTJ) structure within the trench area.09-29-2011
20110233695Magnetoresistive Random Access Memory (MRAM) With Integrated Magnetic Film Enhanced Circuit Elements - A Magnetoresistive Random Access Memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The magnetic tunnel junction region is disposed on the substrate, and includes a first magnetic layer and a second magnetic layer separated by a tunnel barrier insulating layer. The magnetic circuit element region is disposed on the substrate, and includes a plurality of interconnected metal portions. The integrated magnetic material is disposed on the substrate adjacent to the plurality of interconnected metal portions.09-29-2011
20110233700MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING SAME - Disclosed are a magnetoresistance effect element equipped with an magnesium oxide passivation layer, and a high-speed, ultra-low power consumption nonvolatile memory using said element. A tunnel magnetoresistance effect (TMR) film comprised of a ferromagnetic free layer, an insulation layer, and a ferromagnetic fixed layer is provided, and an MgO passivation layer is provided on the side walls of a protective layer and an orientation control layer, thus suppressing elemental diffusion of a tunnel magnetoresistance effect (TMR) element from each layer due to thermal processing at 350° or higher and obtaining a magnetic memory cell and magnetic random access memory having stable, high-output reading and a low current writing characteristics. Furthermore, when CoFeB is used in the ferromagnetic layer and MgO is used in the insulation layer, it is preferable that the MgO passivation layer have an (001) orientation.09-29-2011
20110233699MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY DEVICE - Magnetic memory element includes recording layer changing magnetization direction by external magnetic field, having easy-axis and hard-axis crossing easy-axis, first conductive layer forming magnetic field in direction crossing direction of easy-axis at layout position of recording layer, second conductive layer extending in direction crossing first conductive layer and forming magnetic field in direction crossing direction of hard-axis at layout position of recording layer. Recording layer has at least part between first conductive layer and second conductive layer. Planar-shaped recording layer viewed from direction where first and second conductive layers and recording layer are laminated, has portion located on side and other portion located on other side, with respect to virtual first center line of first conductive layer along direction where first conductive layer extends viewed from lamination direction. Area of portion viewed from lamination direction is less than or equal to one-third area of other portion.09-29-2011
20110233698MAGNETIC MEMORY DEVICES - Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state.09-29-2011
20100314702SPIN TRANSPORT DEVICE - A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.12-16-2010
20130154037METHOD OF MAKING DEVICE - A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a magnetic junction assembly layer over the bottom electrode assembly, forming a patterned mask over the magnetic junction assembly layer, etching the magnetic junction assembly layer to form the magnetic junction assembly with gaps, gap filling the magnetic junction assembly, and planarizing the magnetic junction assembly. A top electrode assembly is formed.06-20-2013
20130154034METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION - A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.06-20-2013
20130154035METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING - A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.06-20-2013
20130154036METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.06-20-2013
20130154038High Performance MTJ Element for Conventional MRAM and for STT-RAM and a Method for Making the Same - A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um06-20-2013
20110291209MAGNETIC MEMORY DEVICE - To provide a magnetic memory device having an increased write current and improved reliability in writing. The magnetic memory device of the invention has a substrate, a write line provided over the substrate, a bit line placed with a space from the write line in a thickness direction of the substrate and extending in a direction crossing with an extending direction of the write line, and a magnetic memory element positioned between the write line and the bit line. The magnetic memory element has a pinned layer whose magnetization direction has been fixed and a recording layer whose magnetization direction changes, depending on an external magnetic field. The recording layer contains an alloy film. The alloy film contains cobalt, iron, and boron and its boron content exceeds 21 at %.12-01-2011
20130119497MAGNETIC TUNNEL JUNCTION STRUCTURE - A magnetic tunnel junction (MTJ) device is formed by a process that includes forming a trench in a substrate and depositing an MTJ structure within the trench. The MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer, and a top electrode. The process includes applying reverse photo etching to remove material that is not directly over the trench. The process also includes plagiarizing the MTJ structure without performing a photo-etch process on the MTJ structure.05-16-2013
20130119494MTJ STRUCTURE AND INTEGRATION SCHEME - A memory device may comprise a magnetic tunnel junction (MTJ) stack, a bottom electrode (BE) layer, and a contact layer. The MTJ stack may include a free layer, a barrier, and a pinned layer. The BE layer may be coupled to the MTJ stack, and encapsulated in a planarized layer. The BE layer may also have a substantial common axis with the MTJ stack. The contact layer may be embedded in the BE layer, and form an interface between the BE layer and the MTJ stack.05-16-2013
20110303998LOW COST MULTI-STATE MAGNETIC MEMORY - A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.12-15-2011
20110303997MAGNETIC TUNNEL JUNCTION DEVICE - A magnetic tunnel junction device comprises a fixed magnetic layer having a first side and a second side, the fixed magnetic layer having a magnetic anisotropy that is out of the film plane of the fixed magnetic layer; a stack of a plurality of bilayers adjacent to the first side of the fixed magnetic layer, each bilayer comprising a first layer comprising at least one of cobalt, iron, a CoFeB alloy, or a CoB alloy and a second layer in contact with the first layer, the second layer comprising palladium or platinum, wherein the plurality of bilayers has a magnetic anisotropy that is out of the film plane of each of the bilayers, wherein the fixed magnetic layer is exchange coupled to the stack of the plurality of bilayers, and a tunnel barrier layer in contact with the second side of the fixed magnetic layer.12-15-2011
20110303996MAGNETIC MEMORY DEVICES - A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.12-15-2011
20110303995SEED LAYER AND FREE MAGNETIC LAYER FOR PERPENDICULAR ANISOTROPY IN A SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic tunnel junction (MTJ) stack.12-15-2011
20120286383EFFICIENTLY INJECTING SPIN-POLARIZED CURRENT INTO SEMICONDUCTORS BY INTERFACING CRYSTALLINE FERROMAGNETIC OXIDES DIRECTLY ON THE SEMICONDUCTOR MATERIAL - A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO11-15-2012
20130113058MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY AND MANUFACTURING METHOD OF THE SAME - A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation layer configured to be provided under the first magnetization free layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region configured to be connected with the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one of a step, a groove and a protrusion inside.05-09-2013
20120012953METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.01-19-2012
20120018826SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor memory device includes sequentially depositing a bottom electrode layer, a magnetic tunnel junction (MTJ) layer, a first top electrode layer, a second top electrode layer and a mask layer, etching the mask layer and forming a mask pattern, etching the second top electrode layer and the first top electrode layer by using the mask pattern as an etch barrier, etching the MTJ layer by using the mask layer and the second top electrode layer as an etch barrier, and etching the bottom electrode layer by using the first top electrode layer as an etch barrier.01-26-2012
20120018825MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME - Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.01-26-2012
20120018824MAGNETIC MEMORY LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME - A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.01-26-2012
20120018823SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER - A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.01-26-2012
20120018822 Writable Magnetic Element - The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.01-26-2012
20120292723Magnetoresistive Device - A magnetoresistive device having a magnetic junction is provided. The magnetic junction of the magnetoresistive device includes a first fixed magnetic layer structure having a fixed magnetization orientation, a second fixed magnetic layer structure having a fixed magnetization orientation, and a free magnetic layer structure having a variable magnetization orientation, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free magnetic layer structure are arranged one over the other, wherein the first fixed magnetic layer structure, the second fixed magnetic layer structure and the free magnetic layer structure have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the first fixed magnetic layer structure and the second fixed magnetic layer structure, wherein the respective magnetization orientations of the first fixed magnetic layer structure and the second fixed magnetic layer structure are oriented in opposite directions, and wherein the magnetization orientation of the first fixed magnetic layer structure is configured to oscillate in a first direction in response to a current or a voltage applied across the magnetic junction so as to change the magnetization orientation of the free magnetic layer structure.11-22-2012
20120043631MAGNETIC MEMORY ELEMENT - A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.02-23-2012
20120056285MEMORY ELEMENT AND MEMORY DEVICE - There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.03-08-2012
20130200475MRAM Device and Fabrication Method Thereof - A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.08-08-2013
20120299136PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY - A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.11-29-2012
20120086090METHODS AND APPARATUS FOR PASSIVE ATTACHMENT OF COMPONENTS FOR INTEGRATED CIRCUITS - Methods and apparatus provide a sensor including a component coupled to the leadframe such that the component is an integrated part of the IC package.04-12-2012

Patent applications in class Magnetic field

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