Entries |
Document | Title | Date |
20080197430 | Biochemical Semiconductor Chip Laboratory Comprising A Coupled Address And Control Chip And Method For Producing The Same - A biochemical semiconductor chip laboratory is disclosed including a coupled address and control chip for biochemical analyses and a method for producing the same. In at least one embodiment the semiconductor chip laboratory has a semiconductor sensor chip, which provides numerous analytical positions for biochemical samples in a matrix. The sensor chip is located on the address and control chip and the analytical positions are in electric contact with a printed contact structure on the upper face of the address and control chip via low-resistance through-platings through the semiconductor substrate of the semiconductor chip. | 08-21-2008 |
20080203502 | SELF-ADDRESSABLE SELF-ASSEMBLING MICROELECTRONIC SYSTEMS AND DEVICES FOR MOLECULAR BIOLOGICAL ANALYSIS AND DIAGNOSTICS - A self-addressable, self-assembling microelectronic device is designed and fabricated to actively carry out and control multi-step and multiplex molecular biological reactions in microscopic formats. These reactions include nucleic acid hybridization, antibody/antigen reaction, diagnostics, and biopolymer synthesis. The device can be fabricated using both microlithographic and micro-machining techniques. The device can electronically control the transport and attachment of specific binding entities to specific micro-locations. The specific binding entities include molecular biological molecules such as nucleic acids and polypeptides. The device can subsequently control the transport and reaction of analytes or reactants at the addressed specific micro-locations. The device is able to concentrate analytes and reactants, remove non-specifically bound molecules, provide stringency control for DNA hybridization reactions, and improve the detection of analytes. The device can be electronically replicated. | 08-28-2008 |
20080211040 | NANOSENSORS - Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described. | 09-04-2008 |
20080237754 | System, methods and apparatuses for nanoelectronics applied to nanorobots - A nanorobotic apparatus is described consisting of hybrid MEMS and NEMS components. The nanorobot contains sensors for situational awareness. The apparatus has nanofilament components for communications. | 10-02-2008 |
20080251865 | NANOELECTROMECHANICAL SYSTEMS AND METHODS FOR MAKING THE SAME - Nanoelectromechanical systems are disclosed that utilize vertically grown or placed nanometer-scale beams. The beams may be configured and arranged for use in a variety of applications, such as batteries, generators, transistors, switching assemblies, and sensors. In some generator applications, nanometer-scale beams may be fixed to a base and grown to a desired height. The beams may produce an electric potential as the beams vibrate, and may provide the electric potential to an electrical contact located at a suitable height above the base. In other embodiments, vertical beams may be grown or placed on side-by-side traces, and an electrical connection may be formed between the side-by-side traces when beams on separate traces vibrate and contact one another. | 10-16-2008 |
20080277746 | Nanowire sensor with self-aligned electrode support - A nanowire sensor with a self-aligned top electrode support insulator, and associated fabrication process are provided. The method begins with a doped silicon-containing substrate. A growth-promotion metal is deposited overlying the substrate. A silicon nitride electrode support is formed overlying the growth-promotion metal. Nanowires are grown from exposed regions of the growth-promotion metal and an insulator is deposited over the nanowires. A top insulator layer is removed to expose tips of the nanowires, and a top electrode metal is deposited overlying the nanowire tips and silicon nitride electrode support. Next, a stack etch is selectively performed, etching down to the level of the growth-promotion metal. A top electrode island is left that is centered on the silicon nitride electrode support and connected to the growth-promotion metal via the nanowires. Then, the sensor is dipped in a buffered hydrofluoric (BHF) solution, to remove any remaining insulator and to expose the nanowires. | 11-13-2008 |
20080296708 | Integrated sensor arrays and method for making and using such arrays - The present invention relates to a method for making an integrated sensor comprising providing a sensor array fabricated on a top surface of a bulk silicon wafer having a top surface and a bottom surface, and comprising a plurality of sensors fabricated on the top surface of the bulk silicon wafer. The method further comprises coupling an SOI wafer to the top surface of the bulk silicon wafer, thinning the back surface of the bulk silicon wafer, coupling a plurality of integrated circuit die to the back surface of the bulk silicon wafer, and removing the SOI wafer from the top surface of the bulk silicon wafer. | 12-04-2008 |
20080308884 | Fabrication of Inlet and Outlet Connections for Microfluidic Chips - A method of making a fluid communication channel between a micro mechanical structure provided on a front side of a device and the back side of said device is described. It includes making the required structural components by lithographic and etching processes on said front side. Holes are then drilled from the back side of said device in precise alignment with the structures on said front side, to provide inlets and/or outlets to and/or from the micromechanical structure. | 12-18-2008 |
20080315331 | ULTRASOUND SYSTEM WITH THROUGH VIA INTERCONNECT STRUCTURE - An ultrasound monitoring system. In one embodiment, an array of transducer cells is formed along a first plane and an integrated circuit structure, formed along a second plane parallel to the first plane, includes an array of circuit cells. A connector provides electrical connections between the array of transducer cells and the array of circuit cells, and an interconnection structure is connected to transfer signals between the circuit cells and processing and control circuitry. The integrated circuit structure includes a semiconductor substrate and a plurality of conductive through-die vias formed through the substrate to provide Input/Output (I/O) connections between the transducer cells and the interconnection structure. The monitoring system may be configured as an imaging system and the processing and control circuitry may be external to the probe unit. | 12-25-2008 |
20090026558 | SEMICONDUCTOR DEVICE HAVING A SENSOR CHIP, AND METHOD FOR PRODUCING THE SAME - A semiconductor sensor device and method is disclosed. In one embodiment, the semiconductor device includes a cavity housing and a sensor chip. In one embodiment, the cavity housing has an opening to the surroundings. The sensor region of the sensor chip faces said opening. The sensor chip is mechanically decoupled from the cavity housing. In one embodiment, the sensor chip is embedded into a rubber-elastic composition on all sides in the cavity of the cavity housing. | 01-29-2009 |
20090026559 | BORON DOPED SHELL FOR MEMS DEVICE - A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer. | 01-29-2009 |
20090050986 | Method for Fabricating Sensor Chip, and Sensor Chip - A method for fabricating a sensor chip having a substrate, a cover layer, a spacer layer interposed between the substrate and the cover layer, and a hollow reaction section provided in the spacer layer, the method comprising the steps of: affixing two or more adhesive or bonding tapes onto a sheet where a plurality of substrates are to be formed or onto a plurality of substrates, to thus form a spacer layer; and forming a hollow reaction section from one or a plurality of gaps between the tapes, whereby volumetric variations or positional displacements of the hollow reaction section can be reduced. A sensor chip which can be fabricated by this method. | 02-26-2009 |
20090050987 | Fabrication of piezoelectric single crystalline thin layer on silicon wafer - The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm. | 02-26-2009 |
20090057789 | PACKAGE STRUCTURE FOR MICRO-SENSOR - The invention discloses a package structure for a micro-sensor including a micro-cantilever for capturing a chemical substance. The package structure, according to the invention, includes a first substrate, a second substrate, and a casing. The first substrate thereon forms a processing circuit. The micro-sensor is bonded to a first upper surface of the first substrate and is electrically connected to the processing circuit capable of outputting a signal relative to the chemical substance sensed by the micro-sensor. The second substrate has a formed-through aperture. The second substrate is bonded to the first substrate such that the micro-sensor is disposed in the formed-through aperture. The casing is bonded to the second substrate and includes a reaction chamber in which the micro-cantilever is installed and a fluid containing the chemical substance flows into. | 03-05-2009 |
20090057790 | PACKAGE FOR A MICRO-ELECTRO MECHANICAL DEVICE - A package for a micro-electromechanical device (MEMS package) includes an inner enclosure having an inner cavity defined therein, and a fill port channel communicating with the inner cavity and of sufficient length to allow a quantity of adhesive to enter the fill port channel while preventing the adhesive from entering the inner cavity. | 03-05-2009 |
20090057791 | MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP - A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer. | 03-05-2009 |
20090065881 | Electric Field Concentration Minimization for MEMS - A method and resulting device for reducing an electrical field at an isolation gap in a capacitive actuator includes providing a bottom electrode layer and forming a pattern in the bottom electrode layer having an isolation gap between center and outer electrode components of the patterned electrode. A spacing material is deposited in the isolation gap, the spacing material having a greater height than a remainder of the patterned electrode, and a sacrificial material is deposited conformably on a surface of the patterned electrode and spacing material. The method also includes applying a deformable electrode to a surface of the sacrificial material, whereby removal of the sacrificial and spacing materials results in a greater spacing between the deformable electrode and the electrode layer at a region of the isolation gap than over a remainder of the spacing between the patterned electrode layer and deformable surface. | 03-12-2009 |
20090072332 | SYSTEM-IN-PACKAGE PLATFORM FOR ELECTRONIC-MICROFLUIDIC DEVICES - The present invention relates to an integrated electronic-micro fluidic device an integrated electronic-micro fluidic device, comprising a semiconductor substrate ( | 03-19-2009 |
20090101996 | NANOSTRUCTURES WITH ELECTRODEPOSITED NANOPARTICLES - A nanoelectronic device includes a nanostructure, such as a nanotube or network of nanotube, disposed on a substrate. Nanoparticles are disposed on or adjacent to the nanostructure so as to operatively effect the electrical properties of the nanostructure. The nanoparticles may be composed of metals, metal oxides or salts and nanoparticles composed of different materials may be present. The amount of nanoparticles may be controlled to preserve semiconductive properties of the nanostructure, and the substrate immediately adjacent to the nanostructure may remain substantially free of nanoparticles. A method for fabricating the device includes electrodeposition of the nanoparticles using one of more solutions of dissolved ions while providing an electric current to the nanostructures but not to the surrounding substrate. | 04-23-2009 |
20090108380 | FET-BASED GAS SENSOR SYSTEM - A sensor system for detection of gas with a modified ion selection FET. The FET may have a gate of low conductivity material for detection of a species in a fluid. A component such as a capacitor may be connected to an electrode of the FET, such as a source, in conjunction with the FET to reduce noise of the detection signal of the species. One or more current sources may provide a current through the FET, and through a resistor to provide a constant source-to-drain voltage. The system may have a bulk voltage selection of either that of a voltage approximately equal to the FET source voltage or greater than the FET source voltage. Also, a guard ring may be implemented in the FET for preventing leakage currents relative to the source or drain. | 04-30-2009 |
20090115004 | SURFACE ACOUSTIC WAVE SENSOR ASSEMBLIES - The invention is directed to a surface acoustic wave sensor assembly that makes use of a Z-axis conductive layer, such as a Z-axis conductive elastomer, or the like. In particular, a Z-axis conductive elastomer couples a circuit layer to a surface acoustic wave (SAW) sensor in order to form a SAW sensor assembly. For example, a plurality of electrical contacts of the circuit layer can be coupled to a plurality of electrodes of the SAW sensor via the Z-axis conductive elastomer. The Z-axis conductive elastomer provides electrical coupling between the electrical contacts and the electrodes, and also forms a hermetic barrier between the circuit layer and the SAW sensor. In addition, elastic properties of the Z-axis conductive elastomer may reduce pressure exerted on the SAW sensor during use. | 05-07-2009 |
20090159995 | Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns - The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas. | 06-25-2009 |
20090184381 | SEMICONDUCTOR SENSOR AND METHOD FOR MANUFACTRUING THE SAME - A semiconductor sensor includes: a semiconductor substrate; a plurality of piezoelectric thin films layered on the semiconductor substrate, the plurality of piezoelectric thin films including at least a pair of the piezoelectric thin films layered above and below; a pair of electrodes that are formed at an interface of at least the pair of the piezoelectric thin films layered above and below and excite surface acoustic waves; a thin film directly under a lowest-layer piezoelectric film of the piezoelectric thin films; a metal thin film that is formed at an interface of the lowest-layer piezoelectric thin film and the thin film, and facilitate a growth of a ridge-and-valley portion on a surface of an uppermost-layer piezoelectric thin film of the piezoelectric thin films; and a sensitive film for molecular adsorption formed on at least the ridge-and-valley portion on the uppermost-layer piezoelectric thin film. | 07-23-2009 |
20090243003 | MANUFACTURING METHOD OF A GAS SENSOR INTEGRATED ON A SEMICONDUCTOR SUBSTRATE - A method manufactures a gas sensor integrated on a semiconductor substrate. The method includes: realizing a first plurality of openings in the semiconductor substrate; realizing a crystalline silicon membrane suspended on the semiconductor substrate, forming an insulating cavity buried in the substrate; realizing a second plurality of openings in the semiconductor substrate, so as to totally suspend on the semiconductor substrate the crystalline silicon membrane; realizing, through a thermal oxidation process of the totally suspended crystalline silicon membrane, a suspended dielectric membrane; realizing, through selective photolithography, a heating element; realizing, through selective photolithography, electrodes and a pair of electric contacts; and selectively realizing, above the electrodes, a sensitive element by compacting layers of metallic oxide through a sintering process generated in the gas sensor by connecting the electrodes to a voltage generator. | 10-01-2009 |
20090256215 | GATED METAL OXIDE SENSOR - An apparatus for sensing an analyte gas is provided. The apparatus may include a signal amplifier that may include a thin film transistor that may include a semiconducting film that may include a metal oxide capable of chemical interaction with the analyte gas, such as carbon monoxide. The apparatus may be tuned for detecting the analyte gas by varying the gate voltage of the transistor. | 10-15-2009 |
20090256216 | Wafer Level CSP Sensor - An electronics package has a wafer level chip scale package (WLCSP) die substrate containing electronic circuits. Through-silicon vias through the die substrate electrically connect the electronic circuits to the bottom surface of the die substrate. A package sensor is coupled to the die substrate for sensing an environmental parameter. A protective encapsulant layer covers the top surface of the die substrate. A sensor aperture over the package sensor provides access for the package sensor to the environmental parameter. | 10-15-2009 |
20090267164 | METHOD OF MANUFACTURING A SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE - The invention relates to a method of manufacturing a semiconductor sensor device ( | 10-29-2009 |
20090278212 | Integrated Device - An integrated device including a sensor and the like formed on a γ-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a γ-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the γ-alumina film is grown; and wiring means for connecting the first function area with the second function area. | 11-12-2009 |
20090278213 | ELECTRODE ARRAYS AND METHODS OF FABRICATING THE SAME USING PRINTING PLATES TO ARRANGE PARTICLES IN AN ARRAY - Electrode arrays and methods of fabricating the same using a printing plate to arrange conductive particles in alignment with an array of electrodes are provided. In one embodiment, a semiconductor device comprises: a semiconductor topography comprising an array of electrodes disposed upon a semiconductor substrate; a dielectric layer residing upon the semiconductor topography; and at least one conductive particle disposed in or on the dielectric layer in alignment with at least one of the array of electrodes. | 11-12-2009 |
20090283844 | PROCESS OF FABRICATING MICROFLUIDIC DEVICE CHIPS AND CHIPS FORMED THEREBY - A process for fabricating multiple microfluidic device chips. The process includes fabricating multiple micromachined tubes in a semiconductor device wafer. The tubes are fabricated so that each tube has an internal fluidic passage and an inlet and outlet thereto defined in a surface of the device wafer. The device wafer is then bonded to a glass wafer to form a device wafer stack, and so that through-holes in the glass wafer are individually fluidically coupled with the inlets and outlets of the tubes. The glass wafer is then bonded to a metallic wafer to form a package wafer stack, so that through-holes in the metallic wafer are individually fluidically coupled with the through-holes of the glass wafer. Multiple microfluidic device chips are then singulated from the package wafer stack. Each device chip has a continuous flow path for a fluid therethrough that is preferably free of organic materials. | 11-19-2009 |
20100013030 | BIOSENSOR, MANUFACTURING METHOD THEREOF, AND BIOSENSING APPARATUS INCLUDING THE SAME - Provided is a biosensor with a three-dimensional multi-layered structure, a method for manufacturing the biosensor, and a biosensing apparatus including the biosensor. The biosensing apparatus includes: a chamber having an inlet through which a fluid containing a biomaterial enters and an outlet through which the fluid exits; and a plurality of biosensors inserted and fixed in the chamber. Each biosensor includes: a support unit having a fluid channel through which a fluid containing a biomaterial flows; and a sensing unit disposed on the support unit in such a way that the sensing unit is exposed three-dimensionally in the fluid channel of the support unit, the sensing unit being surface-treated with a reactive material that is to react with the biomaterial flowing through the fluid channel. | 01-21-2010 |
20100044807 | CMOS-Compatible Microstructures and Methods of Fabrication - The present invention addresses the aims and issues of making multi layer microstructures including “metal-shell-oxide-core” structures and “oxide-shell-metal-core” structures, and mechanically constrained structures and the constraining structures using CMOS (complimentary metal-oxide-semiconductor transistors) materials and layers processed during the standard CMOS process and later released into constrained and constraining structures by etching away those CMOS materials used as sacrificial materials. The combinations of possible constrained structures and methods of fabrication are described. | 02-25-2010 |
20100052080 | BIOSENSOR CHIP AND A METHOD OF MANUFACTURING THE SAME - A biosensor chip ( | 03-04-2010 |
20100096708 | Chip Module for Installing in Sensor Chip Cards for Fluidic Applications and Method for Producing a Chip Module of This Type - A plate-shaped chip supporting body has a number of write/read contacts for exchanging data with an external chip card. A number of corresponding terminal panels which are electrically connected to the write/read contacts of the front flat side, are arranged on the opposite rear side of the chip supporting body. A sensor ship is attached to the rear side of the chip supporting body and has contact pads electrically connected to the terminal panels of the chip supporting body. Contact panels on the flat side of the sensor chip are oriented toward the chip supporting body and are connected to the pad contact, which are located on the opposite flat side of the sensor chip, by at least one electrical signal line path passing through the sensor chip, and the contact panels are connected to the terminal panels of the chip supporting body by electrically conductive material. | 04-22-2010 |
20100096709 | UNCOOLED IR DETECTOR ARRAYS BASED ON NANOELECTROMECHANICAL SYSTEMS - We describe the use of a high-quality-factor torsional resonator of microscale dimensions. The resonator has a paddle that is supported by two nanoscale torsion rods made of a very low thermal conductivity material, such as amorphous (“a-”) silicon. The body of the torsion paddle is coated with an infrared-absorbing material that is thin and light weight, but provides sufficient IR absorption for the applications. It may be placed above a reflecting material of similar dimensions to form a quarter wave cavity. Sensing of the response of the paddle to applied electromagnetic radiation provides a measure of the intensity of the radiation as detected by absorption, and the resulting temperature change, in the paddle. | 04-22-2010 |
20100096710 | SEMICONDUCTOR FINGERPRINT APPARATUS WITH FLAT TOUCH SURFACE - In a fingerprint apparatus, fingerprint sensing members disposed on a silicon substrate detect skin textures of a finger placed thereon to generate electric signals. A set of integrated circuits formed on the substrate processes the electric signals. First bonding pads are disposed on the substrate and electrically connected to the set of integrated circuits. A first insulating layer is disposed below the first bonding pads. Metal plugs penetrating through the substrate are respectively electrically connected to the first bonding pads. A second insulating layer is formed on the substrate and between the metal plugs and the substrate. Second bonding pads are formed on a rear side of the second insulating layer, and are respectively electrically connected to the first bonding pads through the metal plugs. The protection layer is disposed on the substrate and covers the sensing members to form a flat touch surface to be touched by the finger. | 04-22-2010 |
20100109100 | MICRO-FLUIDIC STRUCTURE - A microfabricated structure that includes a first layer of material on a substrate, and a second layer of material over the first layer that forms an encapsulated cavity, and a structural support layer added to the second layer. Openings can be formed in the cavity, and the cavities can be layered side by side, vertically stacked with interconnections via the openings, and a combination of both can be used to construct stacked arrays with interconnections throughout. | 05-06-2010 |
20100117165 | DEPOSITION OF LAYERS OF POROUS MATERIALS, LAYERS THUS OBTAINED AND DEVICES CONTAINING THEM - The present invention describes a process for the deposition of one or more layers of zeolites on rigid supports of various natures and geometry, particularly on silicon wafers. The coating containing zeolites is characterised by pore sizes ranging from 1 Angstrom to a few nanometer units. The deposition process does not interfere with and/or alter the correct functioning of the electronic devices (diodes, bipolar junction transistors, field effect transistors and electronic amplifiers in general) already integrated on the support to be coated on which said deposition is effected. The process according to the invention can be applied to electronic devices and permits their unaltered correct functioning. | 05-13-2010 |
20100133629 | INTEGRATED SENSOR INCLUDING SENSING AND PROCESSING DIE MOUNTED ON OPPOSITE SIDES OF PACKAGE SUBSTRATE - An integrated circuit (IC) device includes a lead frame having a first and a second opposing surface and a plurality of lead fingers. A first die including a signal processor is mounted on the first surface of the lead frame while a second die is mounted on the second surface of the lead frame. The second die includes at least one sensor that senses at least one non-electrical parameter and has at least one sensor output that provides a sensing signal for the parameter. The sensor output is coupled to the signal processor for processing the sensing signal. | 06-03-2010 |
20100148282 | WAFER JOINING METHOD, WAFER COMPOSITE, AND CHIP - A method for joining a first wafer to at least a second wafer. The method is characterized by the following operations of depositing a sinterable bonding material on at least one of the wafers, joining the wafers, and sintering the bonding material by heating. Furthermore, a wafer composite and a chip are also described. | 06-17-2010 |
20100176463 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In order to provide a technique capable of executing an etching process using a dry etching method and a wet etching method in combination with high processing dimensional accuracy, an interlayer insulating film | 07-15-2010 |
20100176464 | Sensor Die Structure - A sensor is implemented in an integrated circuit. The sensor includes one or more sensor pads that are provided at or near a surface of the integrated circuit. One or more integrated circuit components such as a sense amplifier are provided in the integrated circuit die adjacent the sensor pads. One or more other components are provided in the integrated circuit die adjacent the sensor pads. | 07-15-2010 |
20100193884 | Method of Fabricating High Aspect Ratio Transducer Using Metal Compression Bonding - A method and apparatus are described for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer ( | 08-05-2010 |
20100200938 | METHODS FOR FORMING LAYERS WITHIN A MEMS DEVICE USING LIFTOFF PROCESSES - Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges. | 08-12-2010 |
20100219487 | METHOD FOR MANUFACTURING A SENSOR COMPONENT AND SENSOR COMPONENT - A method for manufacturing a sensor component and a sensor component. The sensor component has a semiconductor substrate and a metal substrate. The semiconductor substrate and the metal substrate are bonded together with the aid of a low-temperature process. A bonding material containing metal particles is applied in a first step to the semiconductor substrate and/or the metal substrate and a sintering process is used in a second step for producing the bond between the semiconductor substrate and the metal substrate. | 09-02-2010 |
20100219488 | SILICON STRUCTURE, METHOD FOR MANUFACTURING THE SAME, AND SENSOR CHIP - A silicon structure of the present invention is provided with a silicon substrate ( | 09-02-2010 |
20100230766 | SENSOR DEVICE AND METHOD - A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element. | 09-16-2010 |
20100283110 | INTEGRATED SENSOR CHIP UNIT - An integrated sensor chip unit and fabrication method includes a measured-value pickup for determining measurement data and a circuit arrangement for enabling a wireless power supply and interrogation of the measurement data. The measured-value pickup is formed as an integratable sensor, and the circuit arrangement is formed as an integrated semiconductor circuit module. The sensor and the semiconductor circuit module are mechanically and electrically conductively connected to one another using one or more microsystems engineering techniques. | 11-11-2010 |
20100289095 | SEMICONDUCTOR DEVICE - The semiconductor device comprises a semiconductor chip defining a first face and a second face opposite to the first face, the semiconductor chip comprising at least one contact element on the first face of the semiconductor chip, an encapsulating body encapsulating the semiconductor chip, the encapsulating body having a first face and a second face opposite to the first face, a redistribution layer extending over the semiconductor chip and the first face of the encapsulating body and containing a metallization layer comprising contact areas connected with the contact elements of the semiconductor chip, and an array of external contact elements located on the second phase of the encapsulating body. | 11-18-2010 |
20100314699 | ELECTROCHEMICAL SENSOR DEVICE, METHOD OF MANUFACTURING THE SAME - An electrochemical sensor device ( | 12-16-2010 |
20100314700 | FABRICATING METHOD FOR MICRO GAS SENSOR AND THE SAME - There are provided a micro gas sensor and a method for fabricating the same that comprises a micro heater formed inside a polysilicon membrane by doping impurities into a specific region of the polysilicon membrane positioned under a gas sensing substance, thereby improving thermal structural stability and making it easy to form the gas sensing substance. The micro gas sensor comprises: a micro heater formed by doping impurities into polysilicon vapor-deposited on a substrate on which a first insulating layer is formed; a polysilicon membrane for decreasing a heat loss of the micro heater; a power electrode for supplying power and a temperature measurement electrode for measuring a temperature, positioned at both ends of the micro heater; a second insulating layer formed on the micro heater; a sensing substance formed on the second insulating layer, for sensing a gas; and a sensing electrode for measuring a change in properties of the sensing substance. The method for fabricating a micro gas sensor comprises steps of: forming polysilicon on a substrate on which a first insulating layer is formed; forming a micro heater by doping impurities into the polysilicon; forming electrodes at both ends of the micro heater; forming a second insulating layer on the micro heater; forming a sensing substance on the second insulating layer; and forming a sensing electrode on the sensing substance. | 12-16-2010 |
20110049647 | METHOD AND APPARATUS FOR TUNABLE ELECTRICAL CONDUCTIVITY - An embodiment relates a method comprising creating a reversible change in an electrical property by adsorption of a gas by a composition, wherein the composition comprises a noble metal-containing nanoparticle and a single walled carbon nanotube. Another embodiment relates to a method comprising forming a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube and forming a device containing the said composition. Yet another method relates to a device comprising a composition comprising a noble metal-containing nanoparticle and a single walled carbon nanotube on a silicon wafer, wherein the composition exhibits a reversible change in an electrical property by adsorption of a gas by the composition. | 03-03-2011 |
20110057273 | System with Recessed Sensing or Processing Elements - Backside recesses in a base member host components, such as sensors or circuits, to allow closer proximity and efficient use of the surface space and internal volume of the base member. Recesses may include covers, caps, filters and lenses, and may be in communication with circuits on the frontside of the base member, or with circuits on an active backside cap. An array of recessed components may a form complete, compact sensor system. | 03-10-2011 |
20110062531 | SENSOR ARRAY AND A METHOD OF MANUFACTURING THE SAME - A sensor array ( | 03-17-2011 |
20110084343 | Monolithic IC and MEMS microfabrication process - Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures. | 04-14-2011 |
20110101473 | Junction deveice - This invention relates to a junction device, especially a p-n junction device. This invention also relates to a backward current decoupler which is also a good sensor. An induced backward current by forward current input can be decoupled by the backward current decoupler. The new p-n junction device has built-in damper and better capacitive property so that less power is consumed. The new sensor can be interactable with thermal, magnetic, optical, force or electrical fields. | 05-05-2011 |
20110108931 | ANODIC BONDABLE PORCELAIN AND COMPOSITION FOR THE PORCELAIN - An anodic bondable low-temperature fired porcelain having high-strength and low-thermal-expansion, wherein a conductive ion during anodic bonding is an Li ion, containing a complex oxide having a composition represented by the following formula: | 05-12-2011 |
20110115035 | General strength and sensitivity enhancement method for micromachined device - This invention disclosed a method to strengthen structure and enhance sensitivity for CMOS-MEMS micro-machined devices which include micro-motion sensor, micro-actuator and RF switch. The steps of the said method contain defining deposited region by metal and passivation layer, forming a cavity for depositing metal structure by lithography process, depositing metal structure on the top metal layer of micromachined structure by Electroless plating, polishing process and etching process. The method aims at strengthening structures and minimizing CMOS-MEMS device size. Furthermore, this method can also be applied to inertia sensors such as accelerometer or gyroscope, which can enhance sensitivity and capacitive value, and deal with curl issues for suspended CMOS-MEMS devices. | 05-19-2011 |
20110127619 | BIOSENSOR DEVICES AND METHOD FOR FABRICATING THE SAME - A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the mirco-wells. | 06-02-2011 |
20110140208 | FABRICATION PROCESS OF A BIOSENSOR ON A SEMICONDUCTOR SUBSTRATE - The disclosure relates to a fabrication process of a biosensor on a semiconductor wafer, comprising steps of: making a central photosensitive zone comprising at least one pixel-type biological analysis device comprising a photosensitive layer, and a first peripheral zone surrounding the central photosensitive zone, comprising electronic circuits. The first peripheral zone is covered by a hydrophilic coating, and the central photosensitive zone is covered with a hydrophobic coating. A barrier of a bio-compatible resin is formed on the second peripheral zone. | 06-16-2011 |
20110140209 | MULTI-LAYER MICRO STRUCTUREFOR SENSING SUBSTANCE - A micro structure for sensing a substance using light scattering includes a substrate, a first layer on the substrate, wherein the first layer comprises a metallic material, a second layer over the first layer, and a mask layer over the second layer. A plurality of nano holes are formed through the mask layer and the second layer, wherein the plurality of holes are defined in part by internal surfaces on the second layer and the mask layer. Two or more structure layers are formed on the mask layer and the internal surfaces in the plurality of holes. The two or more structure layers comprise different material compositions. | 06-16-2011 |
20110156175 | METHOD OF FORMING A DIE HAVING AN IC REGION ADJACENT A MEMS REGION - A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having a third dopant concentration overlying the first layer, doping the second layer that overlies the micro-electromechanical region to have a fourth dopant concentration, forming a micro-electromechanical structure in the micro-electromechanical region using the first and second layers, and forming active components in the integrated circuit region using the second layer. | 06-30-2011 |
20110156176 | Leadframe-Based Premolded Package Having Acoustic Air Channel for Micro-Electro-Mechanical System - A low-cost micro-electro-mechanical system (MEMS) has a mass-produced carrier fabricated as a pre-molded leadframe so that the space of the leadframe center is filled with compound and a two-tier recess is created in the center. The first tier is filled by an inset with a first perforation and a second perforation. An integrated circuit chip with an opening and a membrane at the end of the opening, operable as a pressure sensor, microphone, speaker, etc, is assembled on the inset so that the opening is aligned with the first perforation. The chip is protected by a cover transected by a vent aligned with the second inset perforation. An air channel can then reach from the ambient through the vent and the second perforation to the second tier recess, which connects to the first perforation and the chip opening to the membrane. | 06-30-2011 |
20110156177 | REDUCING CAPACITIVE CHARGING IN ELECTRONIC DEVICES - The invention relates to an electronic device for measuring and/or controlling a property of an analyte ( | 06-30-2011 |
20110180884 | METHODS, APPARATUSES, AND SYSTEMS FOR MICROMECHANICAL GAS CHEMICAL SENSING CAPACITOR - A capacitive chemical sensor, along with methods of making and using the sensor are provided. The sensors described herein eliminate undesirable capacitance by etching away the substrate underneath the capacitive chemical sensor, eliminating most of the substrate capacitance and making changes in the chemical-sensitive layer capacitance easier to detect. | 07-28-2011 |
20110186939 | SEMICONDUCTOR TYPE GAS SENSOR AND MANUFACTURING METHOD THEREOF - This invention provides a semiconductor type gas sensor that can considerably increase the detection sensitivity to low-concentration gases, and can increase the response-recovery speed to achieve a conspicuous improvement in the overall performance, as well as a manufacturing method thereof. | 08-04-2011 |
20110186940 | NEUTRON SENSOR WITH THIN INTERCONNECT STACK - A semiconductor device comprises a substrate, an active semiconductor layer situated on the substrate, a stack of interconnect layers deposited on the active semiconductor layer, and a neutron conversion layer deposited on the stack of interconnect layers, wherein the stack of interconnect layers is configured such that at least about 10% of secondary charged particles generated in the neutron conversion layer will have a sufficient ion track length in the active semiconductor layer to generate a detectable charge in the active semiconductor layer. Another semiconductor device comprises a substrate, an active semiconductor layer situated on the substrate, a neutron conversion layer deposited on the active semiconductor layer, and a stack of interconnect layers deposited on the neutron conversion layer. | 08-04-2011 |
20110186941 | DEVICE WITH MICROSTRUCTURE AND METHOD OF FORMING SUCH A DEVICE - Disclosed is a device comprising a substrate carrying a microscopic structure in a cavity capped by a capping layer including a material of formula SiN | 08-04-2011 |
20110186942 | CONTROLLING DIAMOND FILM SURFACES AND LAYERING - A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices. | 08-04-2011 |
20110193183 | NANOWIRE SENSOR, NANOWIRE SENSOR ARRAY AND METHOD OF FABRICATING THE SAME - A method of fabricating a sensor comprising a nanowire on a support substrate with a first semiconductor layer arranged on the support substrate is disclosed. The method comprises forming a fin structure from the first semiconductor layer, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing at least the fin portion of the fin structure thereby forming the nanowire being surrounded by a first layer of oxide; and forming an insulating layer above the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel. A nanowire sensor is also disclosed. The nanowire sensor comprises a support substrate, a semiconducting fin structure arranged on the support substrate, the fin structure comprising at least two semiconducting supporting portions and a nanowire arranged there between; and a first insulating layer on a contact surface of the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel. | 08-11-2011 |
20110204455 | HYDROGEN ION SENSING DEVICE USING OF ARRAYED GATED LATERAL BJT - A hydrogen ion sensing device includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel. With this configuration, an operation point can be adjusted by the bases current with the emitter voltage fixed. In addition, polarities of values of X and Y axes are positive in comparison with a p-channel MOSFET driven with the common collector setting and the device can be operated in a linear region (an active mode) in comparison with ISFET operating in a saturation region. In addition, a sensing area and ion sensitivity can be greatly improved over a single gated lateral BJT and the ion sensitivity can be adjusted by the gate voltage and the base current. Further, the device is capable of operating in a first quadrant even in an n-well, which results in significant reduction of production costs. | 08-25-2011 |
20110210407 | DOUBLE-FACED ADHESIVE FILM AND ELECTRONIC COMPONENT MODULE USING SAME - A double-faced adhesive film including: a supporting film; a first adhesive layer laminated on one surface of the supporting film; and a second adhesive layer laminated on the other surface of the supporting film, wherein the glass transition temperatures, after curing, of the first adhesive layer and the second adhesive layer are each 100° C. or lower, and the first adhesive layer and the second adhesive layer are the layers capable of being formed by a method including the steps of directly applying a varnish to the supporting film and drying the applied varnish. | 09-01-2011 |
20110221013 | MICROELECTROMECHANICAL DEVICE INCLUDING AN ENCAPSULATION LAYER OF WHICH A PORTION IS REMOVED TO EXPOSE A SUBSTANTIALLY PLANAR SURFACE HAVING A PORTION THAT IS DISPOSED OUTSIDE AND ABOVE A CHAMBER AND INCLUDING A FIELD REGION ON WHICH INTEGRATED CIRCUITS ARE FORMED, AND METHODS FOR FABRICATING SAME - There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide. | 09-15-2011 |
20110233690 | SEMICONDUCTOR CHIP ARRANGEMENT WITH SENSOR CHIP AND MANUFACTURING METHOD - On a carrier ( | 09-29-2011 |
20110241134 | MICRO-CHANNEL CHIP AND MICRO-ANALYSIS SYSTEM - A micro-channel chip can be coated uniformly with a thin inorganic oxide film and can prevent an ionic hydrophobic substance from adsorbing through a surface of an inorganic oxide film. In the micro-channel chip, surfaces of inner walls of through-holes in an upper plate member and a channel of a lower plate member are entirely coated with a SiO | 10-06-2011 |
20110260265 | BONDED WAFER SUBSTRATE FOR USE IN MEMS STRUCTURES - A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer. | 10-27-2011 |
20110272768 | Lead Frame and Method of Producing Lead Frame - Provided is a lead frame, an electronic device provided with a lead frame, a method of producing a lead frame, and a method of producing an electronic device provided with a lead frame that has been produced by the method of producing a lead frame, in which a lead frame is not corroded, a mechanical strength of the lead frame is not lowered, it is not necessary to carry out the conventional plating processing steps composed of two stages, the processes are simple, a cost is lower, and a large amount of waste liquid such as plating processing liquid is not generated, thereby preventing an environment from being affected. The lead frame includes an outer lead part and an inner lead part, and plating is carried out on at least a part of one or both of the outer lead part or the inner lead part. | 11-10-2011 |
20110284974 | SEMICONDUCTOR DEVICE - An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films. | 11-24-2011 |
20120001273 | Micro-package for Micromachining Liquid Flow Sensor Chip - The current invention disclosed a micro-package design for packaging of micromachining liquid flow sensor. The package in present invention is fabricated with micromachining or micro-molding approach, which can greatly reduce the manufacturing cost due to the batch production. The micro-package design provides packaging solution for general micromachining liquid flow sensors that can enable various microfluidic applications while reaching the cost threshold for a disposable unit. | 01-05-2012 |
20120025330 | FABRICATION METHOD OF CARBON NANOTUBE FILM AND SENSOR BASED ON CARBON NANOTUBE FILM - A method for fabricating a carbon nanotube film floating on a bottom is provided. The fabrication method of a carbon nanotube film comprises: forming electrodes on a substrate; arranging a suspension comprising a plurality of carbon nanotubes on the electrodes; and arranging the carbon nanotubes on the electrodes by applying a voltage to the electrodes. | 02-02-2012 |
20120080761 | SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA - A semiconductor device includes a substrate wafer, a dielectric layer overlying the substrate wafer, a patterned conductor layer in the dielectric layer, and a first barrier layer overlying the conductor layer. A silicon top wafer is bonded to the dielectric layer. A via is formed through the top wafer and a portion of the dielectric layer to the first barrier layer. A sidewall dielectric layer is formed along inner walls of the via, adjacent the top wafer to a distance below an upper surface of the top wafer, forming a sidewall dielectric layer shoulder. A sidewall barrier layer is formed inward of the sidewall dielectric layer, lining the via from the first barrier layer to the upper surface of the top wafer. A conductive layer fills the via and a top barrier layer is formed on the conductive layer, the sidewall barrier layer, and the top wafer. | 04-05-2012 |
20120098074 | MEMS DEVICE WITH RELEASE APERTURE - The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided. | 04-26-2012 |
20120098075 | INTEGRATED ELECTRONIC DEVICE FOR DETECTING MOLECULES AND METHOD OF MANUFACTURE THEREOF - An integrated electronic device for detecting gases or biological molecules having a microchip comprising integrated electronics manufactured by the CMOS process. The microchip includes a passivation layer. The passivation layer includes one or more windows configured to cover at least one electronic circuit component of the microchip. The one or more windows leave one or more contacts free. The microchip further includes a sensitive covering coupled with said one or more contacts. | 04-26-2012 |
20120133001 | TILEABLE SENSOR ARRAY - A method for forming a tileable detector array is presented. The method includes forming a detector module, where forming the detector module includes providing a sensor array having a first side and a second side, where the sensor array includes a first plurality of contact pads disposed on the second side of the sensor array, disposing the sensor array on an interconnect layer, where the interconnect layer includes a redistribution layer having a first side and a second side, where the redistribution layer includes a second plurality of contact pads disposed on the first side, an integrated circuit having a plurality of through vias disposed therethrough, where a first side of the integrated circuit is operationally coupled to the second side of the redistribution layer, where the sensor array is disposed on the interconnect layer such that the first plurality of contact pads on the second side of the sensor array are aligned with the second plurality of contact pads on the first side of the redistribution layer, operationally coupling the first plurality of contact pads on the second side of the sensor array to the second plurality of contact pads on the redistribution layer to form a sensor stack, coupling the sensor stack to a substrate to form the detector module, and tiling a plurality of detector modules on a second substrate to form the tileable detector array. | 05-31-2012 |
20120146162 | NANOSENSOR AND METHOD OF MANUFACTURING THE SAME - A nanosensor comprising a substrate in which an opening defining a hole is formed; a first layer disposed on the substrate, which comprises a first nanopore in communication with the hole in the substrate; and a second layer contacted or coupled with the first layer and formed of a porous material. | 06-14-2012 |
20120153407 | LIGHT-ASSISTED BIOCHEMICAL SENSOR - A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider. | 06-21-2012 |
20120161253 | GAS SENSOR AND MANUFACTURING METHOD THEREOF - A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm. | 06-28-2012 |
20120168882 | INTEGRATED CHEMICAL SENSOR - A integrated circuit die includes a chemical sensor, a thermal sensor, and a humidity sensor formed therein. The chemical sensor, thermal sensor, and humidity sensor include electrodes formed in a passivation layer of the integrated circuit die. The integrated circuit die further includes transistors formed in a monocrystalline semiconductor layer. | 07-05-2012 |
20120193730 | GAS SENSOR ELEMENT AND MANUFACTURING METHOD OF THE SAME - Provided herein are a gas sensor element in which deformation of a sensitive portion due to stress may be reduced and a method of manufacturing the gas sensor element. A base insulating layer | 08-02-2012 |
20120211845 | Integrated Circuit with Sensor and Method of Manufacturing Such an Integrated Circuit - Disclosed is an integrated circuit comprising a substrate ( | 08-23-2012 |
20120256280 | PACKAGING FOR FINGERPRINT SENSORS AND METHODS OF MANUFACTURE - A fingerprint sensor package, including a sensing side for sensing fingerprint information and a separate connection side for electrically connecting the fingerprint sensor package to a host device, is disclosed. The fingerprint sensor package can also include a sensor integrated circuit facing the sensing side and substantially surrounded by a fill material. The fill material includes vias at peripheral locations around the sensor integrated circuit. The fingerprint sensor package can further include a redistribution layer on the sensing side which redistributes connections of the sensor integrated circuit to the vias. The connections can further be directed through the vias to a ball grid array on the connection side. Some aspects also include electrostatic discharge traces positioned at least partially around a perimeter of the connection side. Methods of manufacturing arc also disclosed. | 10-11-2012 |
20120256281 | SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES - Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode. | 10-11-2012 |
20120267729 | SELF-SEALED FLUIDIC CHANNELS FOR NANOPORE ARRAY - A method of forming a nanopore array includes patterning a front layer of a substrate to form front trenches, the substrate including a buried layer disposed between the front layer and a back layer; depositing a membrane layer over the patterned front layer and in the front trenches; patterning the back layer and the buried layer to form back trenches, the back trenches being aligned with the front trenches; forming a plurality of nanopores through the membrane layer; depositing a sacrificial material in the front trenches and the back trenches; depositing front and back insulating layers over the sacrificial material; and heating the sacrificial material to a decomposition temperature of the sacrificial material to remove the sacrificial material and form pairs of front and back channels, wherein the front channel of each channel pair is connected to the back channel of its respective channel pair by an individual nanopore. | 10-25-2012 |
20120299126 | INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT - Disclosed is an integrated circuit (IC) comprising a substrate ( | 11-29-2012 |
20120306030 | BALANCING A MICROELECTROMECHANICAL SYSTEM - A method of balancing a microelectromechanical system comprises determining if a microelectromechanical system is balanced in a plurality of orthogonal dimensions, and if the microelectromechanical system is not balanced, selectively depositing a first volume of jettable material on a portion of the microelectromechanical system to balance the microelectromechanical system in the plurality of orthogonal dimensions. A jettable material for balancing a microelectromechanical system comprises a vehicle, and a dispersion of nano-particles within the vehicle, in which the total mass of jettable material deposited on the microelectromechanical system is equal to the weight percentage of nano-particles dispersed within the vehicle multiplied by the mass of jettable material deposited on the microelectromechanical system. A microelectromechanical system comprises a number of unbalanced structures, and a number of droplets of jettable material disposed on the unbalanced structures, in which the droplets of jettable material balance the unbalanced structures in a plurality of orthogonal dimensions. | 12-06-2012 |
20120326247 | SELF-SEALED FLUIDIC CHANNELS FOR A NANOPORE ARRAY - A method of forming a nanopore array includes patterning a front layer of a substrate to form front trenches, the substrate including a buried layer disposed between the front layer and a back layer; depositing a membrane layer over the patterned front layer and in the front trenches; patterning the back layer and the buried layer to form back trenches, the back trenches being aligned with the front trenches; forming a plurality of nanopores through the membrane layer; depositing a sacrificial material in the front trenches and the back trenches; depositing front and back insulating layers over the sacrificial material; and heating the sacrificial material to a decomposition temperature of the sacrificial material to remove the sacrificial material and form pairs of front and back channels, wherein the front channel of each channel pair is connected to the back channel of its respective channel pair by an individual nanopore. | 12-27-2012 |
20130032902 | INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT - Disclosed is an integrated circuit comprising a substrate ( | 02-07-2013 |
20130032903 | INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT - Disclosed is an integrated circuit comprising a substrate ( | 02-07-2013 |
20130056838 | SENSOR CHIP AND METHOD FOR MANUFACTURING A SENSOR CHIP - The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighbouring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level. | 03-07-2013 |
20130056839 | ULTRASENSITIVE BIOSENSORS - The present invention is a biosensor apparatus that includes a substrate, a source on one side of the substrate, a drain spaced from the source, a conducting channel between the source and the drain, an insulator region, and receptors on a gate region for receiving target material. The receptors are contacted for changing current flow between the source and the drain. The source and the drain are relatively wide compared to length between the source and the drain through the conducting channel. | 03-07-2013 |
20130069176 | INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT - An integrated circuit package for an integrated circuit having one or more sensor elements in a sensor element area of the circuit. An encapsulation covers bond wires but leaves an opening over the sensor element area. A protection layer is provided over the integrated circuit over which the encapsulation extends, and it has a channel around the sensor element area to act as a trap for any encapsulation material which has crept into the opening area. | 03-21-2013 |
20130099331 | STRUCTURE AND PROCESS FOR MICROELECTROMECHANICAL SYSTEM-BASED SENSOR - A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component. | 04-25-2013 |
20130113054 | SEMICONDUCTOR SENSOR DEVICE AND METHOD OF PACKAGING SAME - A packaged semiconductor device with a cavity formed by a cover or lid mounted to a substrate. The lid covers one or more semiconductor sensor dies mounted on the substrate. The dies are coated with a gel or spray on coating, and the lid is encapsulated with a mold compound. A hole or passage may be formed through the cover and mold compound to expose the sensor dies to selected environmental conditions. | 05-09-2013 |
20130119488 | THINNED FINGER SENSOR AND ASSOCIATED METHODS - An electronic device may include a housing with a connector member opening therein, electronic circuitry within the housing, and a finger sensor assembly carried by the housing. The finger assembly may include a thinned finger sensing integrated circuit (IC) secured to the housing that has a thickness less than 200 microns. The finger sensor assembly may also include a connector member extending through the connector member opening in the housing and coupling together the thinned finger sensing IC and the electronic circuitry. The thinned finger sensing IC may be adhesively secured to the housing, such as using a pressure sensitive adhesive, and the thinned finger sensing IC may conform to a non-planar surface. | 05-16-2013 |
20130126987 | PHYSICAL QUANTITY SENSOR AND METHOD OF MAKING THE SAME - A first sealing layer having a frame-like shape and a first contact layer are formed on a back surface of a frame portion of a sensor substrate. The first contact layer is separated from the first sealing layer, extends through a functional member and an insulation layer, and is electrically connected to the functional member and a first base member. A second sealing layer and a second contact layer are formed on a surface of a wiring substrate. The second sealing layer faces the first sealing layer. The second contact layer is separated from the second sealing layer, extends through the insulation layer, and is electrically connected to the second base member. The sealing layers are eutectically bonded to each other. The contact layers are electrically connected to each other, and thereby the first and second base members and the frame portion have the same potential. | 05-23-2013 |
20130140649 | TRANSIENT DEVICES DESIGNED TO UNDERGO PROGRAMMABLE TRANSFORMATIONS - The invention provides transient devices, including active and passive devices that electrically and/or physically transform upon application of at least one internal and/or external stimulus. Materials, modeling tools, manufacturing approaches, device designs and system level examples of transient electronics are provided. | 06-06-2013 |
20130168781 | TWO-WAFER MEMS IONIZATION DEVICE - A microelectromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer. | 07-04-2013 |
20130193527 | MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THE SAME - The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures. | 08-01-2013 |
20130207204 | BIOSENSOR CHIP AND A METHOD OF MANUFACTURING THE SAME - A method of forming a biosensor chip enables a bond pad and detector electrode to be formed of different materials (one is formed of a connection layer such as copper and the other is formed of a diffusion barrier layer such as tantalum or tantalum nitride). A single planarizing operation is used for both the bond pad and the detector electrode. By using the same processing, resist patterning on an already-planarized surface is avoided, and the cleanliness of both the bond pad and detector electrode is ensured. Self-aligned nanoelectrodes and bond pads are obtained. | 08-15-2013 |
20130207205 | NOISE SHIELDING TECHNIQUES FOR ULTRA LOW CURRENT MEASUREMENTS IN BIOCHEMICAL APPLICATIONS - A device having an integrated noise shield is disclosed. The device includes a plurality of vertical shielding structures substantially surrounding a semiconductor device. The device further includes an opening above the semiconductor device substantially filled with a conductive fluid, wherein the plurality of vertical shielding structures and the conductive fluid shield the semiconductor device from ambient radiation. In some embodiments, the device further includes a conductive bottom shield below the semiconductor device shielding the semiconductor device from ambient radiation. In some embodiments, the opening is configured to allow a biological sample to be introduced into the semiconductor device. In some embodiments, the vertical shielding structures comprise a plurality of vias, wherein each of the plurality of vias connects more than one conductive layers together. In some embodiments, the device comprises a nanopore device, and wherein the nanopore device comprises a single cell of a nanopore array. | 08-15-2013 |
20130207206 | SEMICONDUCTOR DEVICE HAVING AU-CU ELECTRODES, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed. | 08-15-2013 |
20130221452 | Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus - A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A conductive layer can be formed over the encapsulant and the semiconductor die. A transmissive layer can be formed over the semiconductor die. An interconnect structure can be formed through the encapsulant and electrically connected to the conductive layer, whereby the interconnect structure is formed off to only one side of the semiconductor die. | 08-29-2013 |
20130228880 | INTEGRATED SENSOR STRUCTURE - Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated readout electronics and a metallization structure is provided, the metallization structure including tungsten and being exposed on a surface of the semiconductor substrate. In another step, a sensor layer is deposited onto the surface of the semiconductor substrate, the semiconductor substrate having the integrated readout electronics and the metallization structure being exposed, when depositing the sensor layer, to a temperature which is above a maximum temperature used when generating the integrated readout electronics such that the sensor layer is connected to the integrated readout electronics via the metallization structure. | 09-05-2013 |
20130249022 | Double-sided diaphragm micro gas-preconcentrator - A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by bonding an upper silicon substrate with a lower silicon substrate. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator. | 09-26-2013 |
20130256813 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device has a sensor unit including a sensing part, and a semiconductor substrate. The semiconductor substrate is bonded to the sensor unit through an insulation film such that the sensing part is disposed in an air-tightly sealed chamber provided between a recessed portion of the semiconductor substrate and the sensor unit. A surface of the semiconductor substrate provided on a periphery of the recessed portion includes a boundary region at a perimeter of the recessed portion and a bonding region on a periphery of the boundary region. The bonding region has an area greater than an area of the boundary region. The bonding region of the semiconductor substrate is bonded to the sensor unit through the insulation film. | 10-03-2013 |
20130264660 | MICROMECHANICAL SUBSTRATE FOR A DIAPHRAGM WITH A DIFFUSION BARRIER LAYER - At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer. | 10-10-2013 |
20130307093 | BACKSIDE STIMULATED SENSOR WITH BACKGROUND CURRENT MANIPULATION - A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current. | 11-21-2013 |
20130334619 | INTEGRATED CIRCUIT WITH ION SENSITIVE SENSOR AND MANUFACTURING METHOD - Disclosed is an integrated circuit comprising a substrate ( | 12-19-2013 |
20130341734 | INTEGRATED CIRCUIT WITH SENSORS AND MANUFACTURING METHOD - Disclosed is an integrated circuit comprising a substrate ( | 12-26-2013 |
20140027866 | NOISE SHIELDING TECHNIQUES FOR ULTRA LOW CURRENT MEASUREMENTS IN BIOCHEMICAL APPLICATIONS - A device having an integrated noise shield is disclosed. The device includes a plurality of vertical shielding structures substantially surrounding a semiconductor device. The device further includes an opening above the semiconductor device substantially filled with a conductive fluid, wherein the plurality of vertical shielding structures and the conductive fluid shield the semiconductor device from ambient radiation. In some embodiments, the device further includes a conductive bottom shield below the semiconductor device shielding the semiconductor device from ambient radiation. In some embodiments, the opening is configured to allow a biological sample to be introduced into the semiconductor device. In some embodiments, the vertical shielding structures comprise a plurality of vias, wherein each of the plurality of vias connects more than one conductive layers together. In some embodiments, the device comprises a nanopore device, and wherein the nanopore device comprises a single cell of a nanopore array. | 01-30-2014 |
20140061823 | MEMBRANE STRUCTURE FOR ELECTROCHEMICAL SENSOR - A micro-electrochemical sensor contains magnetic compounds inserted within a substrate that exert a magnetic force of attraction on paramagnetic beads held in contact with an electrode. The magnetic compounds can be contained within a fluid that is introduced into a void in the substrate. The electrode can be spaced apart from the magnetic compounds by a dielectric multi-layer membrane. During the fabrication process, different layers within the membrane-electrode structure can be tuned to have compressive or tensile stress so as to maintain structural integrity of the membrane, which is thin compared with the size of the void beneath it. During a process of forming the structure of the sensor, the tensile stress in a TiW adhesion layer can be adjusted to offset a composite net compressive stress associated with the dielectric layers of the membrane. The membrane can also be used in forming both the electrode and the void. | 03-06-2014 |
20140077314 | INTEGRATED CIRCUIT COMPRISING A CAPACITIVE GAS SENSOR - An integrated circuit and a method of making the same. The integrated circuit includes a capacitive gas sensor on a semiconductor substrate. The gas sensor includes first and second capacitor electrodes on the substrate. The gas sensor also includes a gas sensitive material having a dielectric constant that is sensitive to a gas to be detected. The gas sensitive material at least partially surrounds the capacitor electrodes and extends between the capacitor electrodes and the substrate. | 03-20-2014 |
20140077315 | ELECTRONIC SENSOR APPARATUS FOR DETECTING CHEMICAL OR BIOLOGICAL SPECIES, MICROFLUIDIC APPARATUS COMPRISING SUCH A SENSOR APPARATUS, AND METHOD FOR PRODUCING THE SENSOR APPARATUS AND METHOD FOR PRODUCING THE MICROFLUIDIC APPARATUS - An electronic sensor apparatus for detecting chemical or biological species includes a semiconductor chip, a sensor device, and a substrate. The chip is produced from a semiconductor substrate and is configured for one or more functions such as: amplifying and/or evaluating an electrical voltage, amplifying and/or evaluating an electric current, amplifying and/or evaluating an electrical charge, and amplifying and/or reading out capacitance changes. The sensor device has an active surface configured to detect chemical or biological species and generate an electrical signal based on a species-characteristic interaction with the active surface. The electrical signal can be an electrical voltage, an electric current, an electrical charge and/or a capacitance change. The substrate is produced from a melt-moldable material and has a surface including first and second regions. The chip is at least partly embedded in the first region, and the sensor device is at least partly embedded in the second region. | 03-20-2014 |
20140084390 | CHEMICAL SENSOR - In a method for manufacturing a chemical sensor with multiple sensor cells, a substrate is provided and an expansion inhibitor is applied to the substrate for preventing a sensitive material to be applied to an area on the substrate for building a sensitive film of a sensor cell to expand from said area. The sensitive material is provided and the sensitive film is built by contactless dispensing the sensitive material to said area. | 03-27-2014 |
20140084391 | Composite Reconstituted Wafer Structures - A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behaviour of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials may be used in the substrate to forms part of or all of the passive component. A metal carrier may form part of the substrate and part of the at least one passive component. | 03-27-2014 |
20140117468 | METHODS AND INTEGRATED CIRCUIT PACKAGE FOR SENSING FLUID PROPERTIES - An integrated circuit package for sensing fluid properties includes: a substrate made of semiconductor material; a fluid property measurement circuit formed on the substrate; and a sensor circuit coupled to the fluid property measurement circuit within a same integrated circuit package. The sensor circuit is configured to generate a field that interacts with the fluid. The fluid property measurement circuit is configured to determine a change in a property of the sensor circuit as results from the field interacting with the fluid and is further configured to determine a property of the fluid based on the change in the property of the sensor circuit. | 05-01-2014 |
20140159173 | SEMICONDUCTOR DEVICE HAVING AU-CU ELECTRODES, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed. | 06-12-2014 |
20140175570 | DUAL-SIDE MICRO GAS SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a dual-side micro gas sensor and a method of fabricating the same. The sensor may include an elastic layer, a heat-generating resistor layer on the elastic layer, an interlayered insulating layer on the heat-generating resistor layer, an upper sensing layer on the interlayered insulating layer, and a lower sensing layer provided below the elastic layer to face the heat-generating resistor layer, thereby reducing heat loss of the heat-generating resistor layer. | 06-26-2014 |
20140183667 | NANOPORE SENSOR DEVICE - A pair of electrode plates can be provided by directional deposition and patterning of a conductive material on sidewalls of a template structure on a first dielectric layer. An electrode line straddling the center portion is formed. A dielectric spacer and a conformal conductive layer are subsequently formed. Peripheral electrodes laterally spaced from the electrode line are formed by pattering the conformal conductive layer. After deposition of a second dielectric material layer that encapsulates the template structure, the template structure is removed to provide a cavity that passes through the pair of electrode plates, the electrode line, and the peripheral electrodes. A nanoscale sensor thus formed can electrically characterize a nanoscale string by passing the nanoscale string through the cavity while electrical measurements are performed employing the various electrodes. | 07-03-2014 |
20140183668 | NANOPORE SENSOR DEVICE - A pair of electrode plates can be provided by directional deposition and patterning of a conductive material on sidewalls of a template structure on a first dielectric layer. An electrode line straddling the center portion is formed. A dielectric spacer and a conformal conductive layer are subsequently formed. Peripheral electrodes laterally spaced from the electrode line are formed by pattering the conformal conductive layer. After deposition of a second dielectric material layer that encapsulates the template structure, the template structure is removed to provide a cavity that passes through the pair of electrode plates, the electrode line, and the peripheral electrodes. A nanoscale sensor thus formed can electrically characterize a nanoscale string by passing the nanoscale string through the cavity while electrical measurements are performed employing the various electrodes. | 07-03-2014 |
20140197500 | CAPACITIVE SENSOR INTEGRATED ONTO SEMICONDUCTOR CIRCUIT - There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad. | 07-17-2014 |
20140231933 | GAS SENSOR AND MANUFACTURING METHOD THEREOF - Provided is a gas sensor including a substrate, a sensing electrode extended in a first direction on the substrate, and a plurality of heaters disposed in a second direction crossing the first direction on the substrate. The plurality of heaters is separated at both sides of the sensing electrode. The plurality of heaters includes graphene. | 08-21-2014 |
20140252505 | SEMICONDUCTOR ANALYSIS MICROCHIP AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor analysis microchip configured to detect a fine particle in a sample liquid, including a semiconductor substrate, a first flow channel provided in the semiconductor substrate, to which the sample liquid is introduced, and a pore provided in the first flow channel and configured to pass the fine particle in the sample liquid. | 09-11-2014 |
20140264642 | GAS SENSOR - A gas sensor comprises a set of one or more sensor cells (SC) and a substrate ( | 09-18-2014 |
20140291778 | INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY - An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor. | 10-02-2014 |
20140332908 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A chip package including a chip is provided. The chip includes a sensing region or device region adjacent to an upper surface of the chip. A sensing array is located in the sensing region or device region and includes a plurality of sensing units. A plurality of first openings is located in the chip and correspondingly exposes the sensing units. A plurality of conductive extending portions is disposed in the first openings and is electrically connected to the sensing units, wherein the conductive extending portions extend from the first openings onto the upper surface of the chip. A method for forming the chip package is also provided. | 11-13-2014 |
20140346618 | SURFACE TREATED SILICON CONTAINING ACTIVE MATERIALS FOR ELECTROCHEMICAL CELLS - Provided are active materials for electrochemical cells. The active materials include silicon containing structures and treatment layers covering at least some surface of these structures. The treatment layers may include aminosilane, a poly(amine), or a poly(imine). These layers are used to increase adhesion of the structures to polymer binders within active material layers of the electrode. As such, when the silicon containing structures change their size during cycling, the bonds between the binder and the silicon containing structure structures or, more specifically, the bonds between the binder and the treatment layer are retained and cycling characteristics of the electrochemical cells are preserved. Also provided are electrochemical cells fabricated with such active materials and methods of fabricating these active materials and electrochemical cells. | 11-27-2014 |
20150021716 | LOW POWER MICRO SEMICONDUCTOR GAS SENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a low power micro semiconductor gas sensor and a method of manufacturing the same. The micro semiconductor gas sensor includes a substrate having an air gap, a peripheral portion provided on the substrate and comprising electrode pads, a sensor portion comprising sensing electrodes connected from the electrode pads and a sensing film on the sensing electrodes and floating on the air gap, and a connection portion comprising conductive wires electrically connecting the electrode pads and the sensing electrodes to each other, and connecting the peripheral portion and the sensor portion to one another. In this case, the air gap penetrates the substrate, and a thermal isolation area extended from the air gap to a space between the peripheral portion and the sensor portion is provided. | 01-22-2015 |
20150061043 | COMPACT SENSOR MODULE - A compact sensor module and methods for forming the same are disclosed herein. In some embodiments, a sensor die is mounted on a sensor substrate. A processor die can be mounted on a flexible processor substrate. In some arrangements, a thermally insulating stiffener can be disposed between the sensor substrate and the flexible processor substrate. At least one end portion of the flexible processor substrate can be bent around an edge of the stiffener to electrically couple to the sensor substrate | 03-05-2015 |
20150137274 | SEMICONDUCTOR SENSOR CHIPS - Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad. | 05-21-2015 |
20150137275 | Titanium Nitride Electrode - The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises obtaining a titanium nitride element and hydrothermally treating the titanium nitride element by immersing the titanium nitride element in a liquid comprising water while heating said liquid. | 05-21-2015 |
20150291415 | HERMETIC ENCAPSULATION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES - Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects. | 10-15-2015 |
20150291417 | DEVICE PACKAGING METHOD AND DEVICE PACKAGE USING THE SAME - A device packaging method and a device package using the same may be provided. The device packaging method includes forming a package sacrificial layer by applying a first material on a substrate on which a device has been formed; forming a package cap by applying a second material on the package sacrificial layer; generating gas molecules from the package sacrificial layer by applying external stimuli such as light or heat to the package sacrificial layer; and heating the gas molecule and forming a cavity between the device and the package cap. | 10-15-2015 |
20150325557 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A chip package including a first substrate is provided. The first substrate includes a sensing device. A second substrate is attached onto the first substrate and includes an integrated circuit device. A first conductive structure is electrically connected to the sensing device and the integrated circuit device through a redistribution layer disposed on the first substrate. An insulating layer covers the first substrate, the second substrate and the redistribution layer. The insulating layer has a hole therein and a second conductive structure is disposed under the bottom of the hole. A method for forming the chip package is also provided. | 11-12-2015 |
20150336792 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 11-26-2015 |
20150347806 | CHIP PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING CHIP PACKAGE STRUCTURE - A chip package structure includes a flexible substrate, a patterned circuit layer, a fingerprint sensor chip, a plurality of bumps, a patterned dielectric layer and an encapsulant layer. The patterned circuit layer disposed on the flexible substrate includes a fingerprint sensing circuit and a plurality of terminals. The fingerprint sensor chip disposed on the flexible substrate is electrically connected to the fingerprint sensing circuit and includes an active surface, a back surface, and a plurality of bonding pads disposed on the active surface. The bumps disposed between the fingerprint sensor chip and the patterned circuit layer electrically connect the bonding pads and the terminals. The patterned dielectric layer including a first surface and a second surface having a fingerprint sensing region at least covers the fingerprint sensing circuit with the first surface. The encapsulant layer is filled between the flexible substrate and the fingerprint sensor chip and covers the bumps. | 12-03-2015 |
20150353343 | ASIC ELEMENT, IN PARTICULAR AS A COMPONENT OF A VERTICALLY INTEGRATED HYBRID COMPONENT - Measures are provided which are used for stabilizing the substructure of the connecting areas of ASIC elements. These measures relate to ASIC elements including an ASIC substrate, into which electrical circuit functions are integrated, and including an ASIC layer structure on the ASIC substrate, which includes multiple wiring levels for the circuit functions, which are separated from one another by insulation layers and are interconnected via metallic plugs. At least one connecting area for placing wire bonds or for wafer bonding is implemented in at least one of the uppermost wiring levels. At least one chain of metallic plugs arranged vertically in a direct line is implemented in the ASIC layer structure below the connecting area, which extends from the uppermost wiring level up to the ASIC substrate or oxide trenches introduced therein. | 12-10-2015 |
20150353347 | Component including two semiconductor elements, between which at least two hermetically sealed cavities are formed and method for establishing a corresponding bonding connection between two semiconductor elements - To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities. | 12-10-2015 |
20150360938 | MEMS STRUCTURE, CAP SUBSTRATE AND METHOD OF FABRICATING THE SAME - A micro electro mechanical system (MEMS) structure is provided, which includes a first substrate, a second substrate, a MEMS device and a hydrophobic semiconductor layer. The first substrate has a first portion. The second substrate is substantially parallel to the first substrate and has a second portion substantially aligned with the first portion. The MEMS device is between the first portion and the second portion. The hydrophobic semiconductor layer is made of germanium (Ge), silicon (Si) or a combination thereof on the first portion, the second portion or the first portion and the second portion and faces toward the MEMS device. A cap substrate for a MEMS device and a method of fabricating the same are also provided. | 12-17-2015 |
20150375996 | METHOD OF MAKING A SYSTEM-IN-PACKAGE DEVICE, AND A SYSTEM-IN-PACKAGE DEVICE - A method of making a system-in-package device, and a system-in-package device is disclosed. In the method, at least one first species die with predetermined dimensions, at least one second species die with predetermined dimensions, and at least one further component of the system-in-device is included in the system-in package device. At least one of the first and second species dies is selected for redimensioning, and material is added to at least one side of the selected die such that the added material and the selected die form a redimensioned die structure. A connecting layer is formed on the redimensioned die structure. The redimensioned die structure is dimensioned to allow mounting of the non-selected die and the at least one further component into contact with the redimensioned die structure via the connecting layer. | 12-31-2015 |
20160013112 | Sensor System Comprising a Ceramic Housing | 01-14-2016 |
20160023888 | Methods And Structures For Thin-Film Encapsulation And Co-Integration Of Same With Microelectronic Devices and Microelectromechanical Systems (MEMS) - Methods and structures that may be implemented in one example to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) such as sensors and actuators. For example, structures having varying characteristics may be fabricated using the same basic process flow by selecting among different process options or modules for use with the basic process flow in order to create the desired structure/s. Various process flow sequences as well as a variety of device design structures may be advantageously enabled by the various disclosed process flow sequences. | 01-28-2016 |
20160023889 | Membrane Transducer Structures And Methods Of Manufacturing Same Using Thin-Film Encapsulation - Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers. | 01-28-2016 |
20160025664 | Trapped Sacrificial Structures And Methods Of Manufacturing Same Using Thin-Film Encapsulation - Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures. | 01-28-2016 |
20160027728 | NOISE SHIELDING TECHNIQUES FOR ULTRA LOW CURRENT MEASUREMENTS IN BIOCHEMICAL APPLICATIONS - A device having an integrated noise shield is disclosed. The device includes a plurality of vertical shielding structures substantially surrounding a semiconductor device. The device further includes an opening above the semiconductor device substantially filled with a conductive fluid, wherein the plurality of vertical shielding structures and the conductive fluid shield the semiconductor device from ambient radiation. In some embodiments, the device further includes a conductive bottom shield below the semiconductor device shielding the semiconductor device from ambient radiation. In some embodiments, the opening is configured to allow a biological sample to be introduced into the semiconductor device. In some embodiments, the vertical shielding structures comprise a plurality of vias, wherein each of the plurality of vias connects more than one conductive layers together. In some embodiments, the device comprises a nanopore device, and wherein the nanopore device comprises a single cell of a nanopore array. | 01-28-2016 |
20160039664 | MONOLITHIC INTEGRATION OF STRESS ISOLATION FEAUTURES IN A MICROELECTROMECHANICAL SYSTEM (MEMS) STRUCTURE - A microelectromechanical (MEMS) structure is provided. In one embodiment, the MEMS structure includes a glass substrate layer containing at least one embedded stress isolation feature. The glass substrate also includes at least one bump bond site configured for coupling the MEMS structure to a package. The MEMS structure also includes a semiconductor device layer, formed on the glass substrate layer, that includes a MEMS sensor. The MEMS structure also includes a top glass layer disposed on the semiconductor device layer | 02-11-2016 |
20160056365 | Micromechanical Sensor Device and Corresponding Production Method - A micromechanical sensor device and a corresponding production method include a substrate that has a front and a rear and a plurality of pillars that are formed on the front of the substrate. On each pillar, a respective sensor element is formed, which has a greater lateral extent than the associated pillar. A cavity is provided laterally to the pillars beneath the sensor elements. The sensor elements are laterally spaced apart from each other by respective separating troughs and make electrical contact with a respective associated rear contact via the respective associated pillar. | 02-25-2016 |
20160091446 | SENSOR CHIP - A sensor chip comprises a substrate ( | 03-31-2016 |
20160093548 | SEMICONDUCTOR PACKAGE WITH PRINTED SENSOR - A method forming packaged semiconductor devices includes providing a completed semiconductor package having a die with bond pads coupled to package pins. Sensor precursors including an ink and a liquid carrier are additively printed directly on the die or package to provide precursors for electrodes and a sensing material between the sensor electrodes. Sintering or curing removes the liquid carrier such that an ink residue remains to provide the sensor electrodes and sensing material. The sensor electrodes electrically coupled to the pins or bond pads or the die includes a wireless coupling structure coupled to the bond pads and the method includes additively printing an ink then sintering or curing to form a complementary wireless coupling structure on the completed semiconductor package coupled to the sensor electrodes so that sensing signals sensed by the sensor are wirelessly transmitted to the bond pads after being received by the wireless coupling structure. | 03-31-2016 |
20160099195 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A chip package including a first substrate having an upper surface, a lower surface and a sidewall is provided. A sensing region or device region and a conducting pad are adjacent to the upper surface. A through-hole penetrates the first substrate. A redistribution layer extends from the lower surface into the through-hole and is electrically connected to the conducting pad. The redistribution layer further laterally extends from the lower surface to protrude from the sidewall. A method for forming the chip package is also provided. | 04-07-2016 |
20160103109 | GAS SENSOR DEVICE WITH FRAME PASSAGEWAYS AND RELATED METHODS - A gas sensor device may include a gas sensor integrated circuit (IC) having a gas sensing surface, and bond pads adjacent to the gas sensing surface, and a frame having gas passageways extending therethrough adjacent the gas sensing surface. The gas sensor device may include leads, each having a proximal end spaced from the frame and bonded to a respective bond pad, and a distal end extending downwardly from the proximal end, and encapsulation material filling the space between the proximal ends of the leads and the frame. | 04-14-2016 |
20160126195 | NON-MAGNETIC PACKAGE AND METHOD OF MANUFACTURE - A non-magnetic hermetic package includes walls that surround an open cavity, with a generally planar non-magnetic and metallic seal ring disposed in a continuous loop around upper edges of the walls; a sensitive component that is bonded within the cavity; and a non-magnetic lid that is sealed to the seal ring to close the cavity by a metallic seal. | 05-05-2016 |
20160137488 | METHOD AND APPARATUS OF MAKING MEMS PACKAGES - MEMS packages and modules are described. In an embodiment, a module includes a package mounted within an opening in a module board. The package includes a flexible wiring board mounted to a back surface of the module board and spanning across the opening in the module board. A die is mounted on the flexible wiring board and is encapsulated within an overmold. An air gap exists laterally between the overmold and side surface of the opening in the module board. | 05-19-2016 |
20160152467 | MEMS CAPPING METHOD | 06-02-2016 |
20160159639 | METHOD FOR HERMETICALLY SEALING WITH REDUCED STRESS - An electronic device comprising a first substrate having a device area, a first sealing element comprising an anelastic material and a second sealing element being a metal. The first sealing means and the second sealing means are arranged such that the inner side or the outer side of the sealing is completely formed by the second sealing element providing hermiticity and the other side is substantially formed by the first sealing element providing a flexible sealing. | 06-09-2016 |
20160167953 | MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR | 06-16-2016 |
20160172264 | PACKAGE STRUCTURE AND FABRICATION METHOD THEREOF | 06-16-2016 |
20160178656 | Silicon-Based MEMS Devices Including Wells Embedded with High Density Metal | 06-23-2016 |
20160185593 | WAFER LEVEL PACKAGE FOR A MEMS SENSOR DEVICE AND CORRESPONDING MANUFACTURING PROCESS - A MEMS device having a wafer-level package, is provided with: a stack of a first die and a second die, defining at least a first internal surface internal to the package and carrying at least an electrical contact pad, and at least a first external surface external to the package and defining a first outer face of the package; and a mold compound, at least in part coating the stack of the first and second dies and having a front surface defining at least part of a second outer face of the package, opposite to the first outer face. The MEMS device is further provided with: at least a vertical connection structure extending from the contact pad at the first internal surface towards the front surface of the mold compound; and at least an external connection element, electrically coupled to the vertical connection structure and exposed to the outside of the package, at the second outer face thereof. | 06-30-2016 |
20160195504 | METHODS AND DEVICES FOR DEPOSITION OF MATERIALS ON PATTERNED SUBSTRATES | 07-07-2016 |
20160200566 | MICROELECTROMECHANICAL SYSTEM (MEMS) ON APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC) | 07-14-2016 |
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20180022601 | METHOD FOR PRODUCING A SEMICONDUCTOR MODULE | 01-25-2018 |
20190148253 | System and Method for a Transducer in an eWLB Package | 05-16-2019 |
20190148344 | MULTIPLE PLATED VIA ARRAYS OF DIFFERENT WIRE HEIGHTS ON SAME SUBSTRATE | 05-16-2019 |
20190148566 | Semiconductor Sensor Device and Method for Fabricating the Same | 05-16-2019 |