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Photodiodes accessed by FETs

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257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257213000 - FIELD EFFECT DEVICE

257288000 - Having insulated electrode (e.g., MOSFET, MOS diode)

257290000 - Light responsive or combined with light responsive device

257291000 - Imaging array

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DocumentTitleDate
20130026547ACTIVE PIXEL SENSOR WITH A DIAGONAL ACTIVE AREA - An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line and a processor based system with such an imaging device. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also may be fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.01-31-2013
20100019295SINGLE PHOTON AVALANCHE DIODES - A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.01-28-2010
20100059803LIGHT REFLECTING CMOS IMAGE SENSOR - An image sensor comprising at least: 03-11-2010
20090194800Dual-Pixel Full Color CMOS Imager with Large Capacity Well - A dual-pixel full color CMOS imager is provided. The imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The imager further includes a single photodiode including a bottom p doped layer overlying the substrate at a third depth, where the third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer.08-06-2009
20090194799Dual-pixel Full Color CMOS Imager - A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.08-06-2009
20100012993SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to each of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.01-21-2010
20110186917SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.08-04-2011
20090200585BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER - A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P08-13-2009
20080258190SOLID-STATE IMAGE SENSING DEVICE AND CAMERA SYSTEM USING THE SAME - A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.10-23-2008
20080258189Image Sensor and Method of Manufacturing the Same - An image sensor and a method of manufacturing the same are provided. The image sensor includes a semiconductor substrate, a metal line layer, a first conduction type conducting layer, a first pixel isolation layer, an intrinsic layer, and second conduction type conducting layer. The semiconductor substrate includes a circuit region. The metal line layer including a plurality of metal lines and an interlayer insulating layer is formed on the semiconductor substrate. The first conductive layer having patterns separated from each other by the pixel isolation layer is formed on the metal lines. The first pixel isolation layer is formed between the separated patterns of the first conduction type conducting layer. The intrinsic layer is formed on the first conductive layer and the first pixel isolation layer. The second conduction type conducting layer is formed on the intrinsic layer.10-23-2008
20080258188METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an MOS device is provided. First, gates and source/drain regions of transistors are formed on a substrate. A photodiode doped region and a floating node doped region are formed in the substrate. Thereafter, a spacer stacked layer including a bottom layer, an inter-layer and a top layer is formed to cover each gate of the transistors. Afterwards, a first mask layer having an opening exposing at least the photodiode doped region is formed on the substrate, and then the top layer exposed by the opening is removed. Next, the first mask layer is removed, and then a second mask layer is formed on a region correspondingly exposed by the opening. A portion of the top layer and the inter-layer exposed by the second mask layer is removed to form spacers on sidewalls of the gates.10-23-2008
20110193147BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME - Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.08-11-2011
20100038689INTEGRATING FABRICATION OF PHOTODETECTOR WITH FABRICATION OF CMOS DEVICE ON A SILICON-ON-INSULATOR SUBSTRATE - A method and semiconductor device for integrating the fabrication of a photodetector with the fabrication of a CMOS device on a SOI substrate. The SOI substrate is divided into two regions, a CMOS region and an optical detecting region. After the CMOS device is fabricated in the CMOS region, the optical detecting region is patterned and etched through the top silicon layer and the buried oxide layer to the base silicon layer. The pattern is etched to a depth so that after a material of a photodetector is deposited in the etched pattern, the material grows to the surface level of the SOI substrate. After the formation of a photodetector structure in the optical detecting region, the metallization process is performed on the CMOS device and the photodetector. In this manner, the fabrication of a photodetector is integrated with the fabrication of a CMOS device on the SOI substrate.02-18-2010
20100032735CMOS Image Sensor and Manufacturing Method Thereof - A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.02-11-2010
20100032734MINIATURE IMAGE SENSOR - An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).02-11-2010
20100052020SEMICONDUCTOR SUBSTRATE AND MOS BASED PIXEL STRUCTURE - The invention relates to a semiconductor substrate 03-04-2010
20100044764COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.02-25-2010
20100044763Method and apparatus providing an imager with a shared power supply and readout line for pixels - A method and apparatus providing an imager with shared power supply and readout lines. A pixel array has a plurality of pixels arranged in rows and columns. Each column of the array comprises a column line coupled to receive pixel signals from the pixels in the column and selectively operated to provide a supply voltage to at least one pixel in a different column.02-25-2010
20090159945IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.06-25-2009
20090159944IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor comprises a substrate including a photodiode, and an insulation pattern structure making contact with the photodiode on the substrate. An anti-reflection pattern is formed on the insulation pattern structure and the substrate. The anti-reflection pattern includes a first opening through which the insulation pattern structure is exposed corresponding to the photodiode. A first insulation interlayer structure is formed on the anti-reflection pattern, and the first insulation interlayer structure includes at least one insulation layer and a second opening connected to the first opening. A metal wiring structure is formed in the insulation layer, and a transparent insulation pattern is formed in the first and second openings. A color filter is formed on the transparent insulation pattern, and a micro lens is formed on the color filter.06-25-2009
20090159943Image Sensor and Method for Manufacturing the Same - An image sensor may include a dielectric, a metal interconnection, an align key, a first substrate, a photodiode, and a transparent electrode. The first substrate may include a pixel region, a peripheral circuitry region and a scribe lane. The dielectric may include a metal interconnection and an align key over the first substrate. The photodiode may be formed over the pixel region and the scribe lane. The transparent electrode may be formed over the photodiode. The align key may have a protrusion formed in a center thereof.06-25-2009
20090159942Image Sensor and Method for Manufacturing the Same - An image sensor can include a readout circuitry, a metal interconnection, a metal layer, and an image sensing device. The metal interconnection can be formed over the readout circuitry and the metal layer can be formed over the metal interconnection. The image sensing device can be formed over the metal layer. The metal layer can be formed through a low temperature deposition method at a low temperature.06-25-2009
20090159941CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A complementary metal oxide silicon (CMOS) image sensor and a method for fabricating the same. In one example embodiment, a CMOS image sensor includes a substrate, a first dielectric film, a plurality of metal patterns, a second dielectric film, a plurality of via holes, a plurality of metal wires, a plurality of silicon oxide films, a plurality of trenches, and a plurality of photo diodes. The first dielectric film is formed on the substrate. The metal patterns are formed on the first dielectric film. The second dielectric film is formed on the first dielectric film and on the metal patterns. The via holes are formed through the second dielectric film. The metal wires are each formed in one of the via holes. The silicon oxide films are formed on the second dielectric film. The trenches are formed between the silicon oxide films. The photo diodes are formed in the trenches.06-25-2009
20090159940STRUCTURE AND METHOD FOR FLEXIBLE SENSOR ARRAY - A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain contact layer and the semiconductor layer substantially simultaneously, wherein the patterned semiconductor layer forms part of a sensor of the sensor array.06-25-2009
20100109060IMAGE SENSOR WITH BACKSIDE PHOTODIODE IMPLANT - An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing.05-06-2010
20090146199CMOS image sensor and method for fabricating the same - A CMOS image sensor and fabricating method can reduce leakage current of a photodiode reduced by configuring a triangular shape of a photodiode area to minimize an interface contacting the STI or performing deuterium annealing to remove dangling bonds from an interface contacting with oxide. The CMOS image sensor includes a semiconductor substrate, a device isolation layer on the semiconductor substrate, and a plurality of diodes, each having a shape minimizing an area of a boundary contacting with the device isolation layer.06-11-2009
20130082313CMOS IMAGE SENSOR WITH RESET SHIELD LINE - Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.04-04-2013
20130082312Transistors, Methods of Manufacturing Thereof, and Image Sensor Circuits with Reduced RTS Noise - Transistors, methods of manufacturing thereof, and image sensor circuits with reduced random telegraph signal (RTS) noise are disclosed. In one embodiment, a transistor includes a channel disposed between two isolation regions in a workpiece. The channel has edge regions proximate the isolation regions and a central region between the edge regions. The transistor includes a gate dielectric disposed over the channel, and a gate disposed over the gate dielectric. The transistor includes a voltage threshold modification feature proximate the edge regions configured to increase a voltage threshold of the transistor proximate edge regions relative to the central region of the channel.04-04-2013
20090200584Full Color CMOS Imager Filter - A full color complementary metal oxide semiconductor (CMOS) imaging circuit is provided. The imaging circuit comprises an array of photodiodes including a plurality of pixel groups. Each pixel group supplies 3 electrical color signals, corresponding to 3 detectable colors. The circuit also includes a color filter array overlying the photodiode array employing less than 3 separate filter colors. Each pixel group may be enabled as a dual-pixel including a single photodiode (PD) to supply a first color signal and stacked PDs to supply a second and third color signal. In one aspect, the color filter array employs 1 filter color per pixel group. In another aspect, the color filter array employees 2 filter colors per pixel group. In either aspect, the color filter array forms a checkerboard pattern of color filter pixels. For example, a magenta color filter may overlie the stacked PDs of each dual-pixel, to name one variation.08-13-2009
20120181590IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a≧b.07-19-2012
20120181589CMOS IMAGE SENSOR WITH NON-CONTACT STRUCTURE - A complementary metal oxide semiconductor (CMOS) image sensor device includes a capacitive coupled photodiode that is formed within a region of a semiconductor substrate. The photodiode receives an incident light and generates a corresponding electric charge. The CMOS image sensor device includes a reset transistor coupled to the photodiode for reverse biasing the photodiode with a predetermined voltage. The CMOS image sensor device further includes a buffer circuit and a capacitor, which is interposed between the photodiode and the buffer circuit. The capacitor is configured to transfer the electric charge to the buffer circuit. The buffer circuit may include an emitter follower or a source follower transistor.07-19-2012
20090045443SPLIT TRUNK PIXEL LAYOUT - A pixel array architecture having multiple pixel cells arranged in a split trunk pixel layout and sharing common pixel cell components. The array architecture increases the fill factor, and in turn, the quantum efficiency of the pixel cells. The common pixel cell components may be shared by a number of pixels in the array, and may include several components that are associated with the storage and readout of a signal from the pixel cells.02-19-2009
20130049083SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.02-28-2013
20100133596SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes pixels arranged in a matrix on a semiconductor substrate, the pixels each including: a photodiode for photoelectric-converting an incident light beam; a readout transistor for reading out a signal charge from the photodiode; and a floating diffusion region for converting the read out signal charge into a voltage, wherein the semiconductor substrate is of an n-type, a first p-type well is provided below an n-type forming layer of the photodiode so as to be located at a distant position from a surface of the n-type substrate at the photodiode side, and partially or entirely below the readout transistor, the first p-type well is formed so as to reach the surface of the semiconductor substrate.06-03-2010
20090302361CMOS Image Sensor and Method for Manufacturing the Same - A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.12-10-2009
20090302360PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE - A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.12-10-2009
20090302358CMOS image sensor with high full-well-capacity - An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.12-10-2009
20130069130SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a semiconductor substrate having a first surface on a light incident side and a second surface on a side opposite to the light incident side, a photodiode in the semiconductor substrate, a functional layer which covers the entire photodiode on the side of the first surface of the semiconductor substrate, and has a function of transmitting the light traveling from an exterior to an interior of the semiconductor substrate, and reflecting the light traveling from the interior to the exterior of the semiconductor substrate, and a reflecting layer which covers the entire second surface of the semiconductor substrate, and has a function of reflecting the light traveling from the interior to the exterior of the semiconductor substrate.03-21-2013
20130056809Image Sensor with Reduced Noiseby Blocking Nitridation Over Selected Areas - An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide layer, the gate oxide layer having a first level of nitridation, and a second transistor having a gate oxide layer, the gate oxide layer having a second level of nitridation that is higher than the first level of nitridation.03-07-2013
20130056808Isolation Area Between Semiconductor Devices Having Additional Active Area - An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.03-07-2013
20080283880CMOS PIXEL SENSOR WITH DEPLETED PHOTOCOLLECTORS AND A DEPLETED COMMON NODE - An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.11-20-2008
20120112255Solid-State Image Sensor - A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.05-10-2012
20090078975CMOS image sensor - There is provided a CMOS image sensor including: a photodiode receiving light to generate photogenerated charges; a transmission gate unit transmitting the photogenerated charges generated by the photodiode to a first floating diffusion area, and increasing the capacitance of the first floating diffusion area; a transfer transistor transferring the photogenerated charges of the first floating diffusion area transmitted by the transmission gate unit to a second floating diffusion area; and a drive transistor converting the photogenerated charges of the second floating diffusion area into a detection voltage.03-26-2009
20090078974Solid-state image capturing device; manufacturing method for the solid-state image capturing device; and electronic information device - A solid-state image capturing device is provided with a plurality of light receiving elements arranged on a surface section of a semiconductor substrate, a color filter of each color for each of the plurality of light receiving elements, and a plurality of microlenses each for condensing incident light into each of the plurality of light receiving elements, in which the interlayer insulation film is provided directly below the color filter of each color in a state where a passivation and hydrogen sintering process film is removed from the interlayer insulation film.03-26-2009
20090065832SOLID-STATE IMAGING DEVICE - It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention. The solid-state imaging device comprises a signal line formed on the substrate, an island shaped semiconductor placed over the signal line, and a pixel selection line connected to an upper portion of the island shaped semiconductor. The island shaped semiconductor comprises a first semiconductor layer disposed in a lower portion of the island shaped semiconductor and connected to the signal line, a second semiconductor layer disposed adjacent to an upper side of the first semiconductor layer, a gate connected to the second semiconductor layer via an insulating film, an electric charge accumulator comprising a third semiconductor layer connected to the second semiconductor layer and carrying a quantity of electric charges which varies in response to a light reception, and a fourth semiconductor layer disposed adjacent to an upper side of the second semiconductor layer and the third semiconductor layer and connected to the pixel selection line. The solid-state imaging devices are arranged on the substrate in a honeycomb configuration.03-12-2009
20090065821IMAGE SENSOR AND FABRICATING METHOD THEREOF - An image sensor and fabricating method thereof for preventing cross-talk between neighboring pixels by providing at least three light-shield walls combining to extend vertically above a lateral periphery of a photodiode for deflecting light from a microlens array towards the photodiode.03-12-2009
20090065820Method and structure for simultaneously fabricating selective film and spacer - The present invention provides a method for simultaneously fabricating a selective film and a spacer. First, a semiconductor substrate is provided and a first device area and a second device area are defined on the semiconductor substrate. At least a gate is formed on the semiconductor substrate in the second device area. Subsequently, at least a dielectric material is formed on the semiconductor substrate and the dielectric material covers the first device area and the second device area. A patterned mask is then formed on a portion of the dielectric material. Subsequently, an etching process is carried out to remove the dielectric material not covered by the patterned mask, thereby a selective film is formed in the first device area and simultaneously spacers are formed on the sidewalls of the gate in the second device area. Finally, the patterned mask is removed.03-12-2009
20090267121SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.10-29-2009
20090242951SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.10-01-2009
20090236645CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CIS and a method of manufacturing the same are provided. The CIS includes a device isolation layer formed on a device isolation region of a substrate of a first conductive type, the substrate including an active region and the device isolation region, the active region including a photodiode region and a transistor region; a high-concentration diffusion region of the first conductive type formed around the device isolation layer; a gate electrode formed on the active region of the substrate with a gate insulation layer interposed therebetween; a low-concentration diffusion region of a second conductive type formed on the photodiode region and spaced a predetermined distance apart from the device isolation layer; and a high-concentration diffusion region of the second conductive type formed on the transistor region.09-24-2009
20090236643CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING - A method of manufacturing an image sensor is capable of preventing image lag and suppressing dark current by performing a substantially perfect reset process. Embodiments relate to a CMOS image sensor which includes a P−-type epi layer which is formed over a semiconductor substrate and defines a photodiode region FD, an active region, and a device isolation region. A device isolation film may be formed in the device isolation region and includes an electrode. A gate electrode may be formed over the P−-type epi layer with a gate insulating film interposed therebetween.09-24-2009
20090026508Solid-state photosensor with electronic aperture control - The effective photosensitive area of a solid-state photosensor is controlled with a multitude of electrodes (E01-29-2009
20090008687SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.01-08-2009
20090008686SOLID-STATE IMAGING DEVICE WITH IMPROVED CHARGE TRANSFER EFFICIENCY - A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.01-08-2009
20090008685Image Sensor and Controlling Method Thereof - A controlling method of an image sensor is disclosed. The method includes: measuring a first output voltage of a drive transistor, a gate of which is combined to a floating diffusion region, after a predetermined integration time; resetting the floating diffusion region by turning on a reset transistor connected between the floating diffusion region and a power supply group; measuring a reference voltage outputted from the drive transistor; transferring electric charges generated in a photo diode by sensing light inputted from the outside to the floating diffusion region by turning on a transfer transistor connected to the photo diode; and measuring a second output voltage of the drive transistor; wherein an image is generated by using a voltage difference between the first output voltage and the reference voltage, and a voltage difference between the second output voltage and the reference voltage.01-08-2009
20090008684PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGE SENSING SYSTEM - A photoelectric conversion device comprises a photoelectric conversion unit, a floating diffusion region, a transfer transistor, and an output unit. A control electrode of the transfer transistor includes a first portion which extends along a channel width direction and overlaps a first boundary side when seen through from a direction perpendicular to a light receiving surface of the photoelectric conversion unit, and a second portion which extends along a channel length direction from one end of the first portion and overlaps a second boundary side when seen through from the direction perpendicular to the light receiving surface, and the control electrode of the transfer transistor has an L shape when viewed from the direction perpendicular to the light receiving surface.01-08-2009
20090008683IMAGING APPARATUS - An imaging apparatus comprises: a semiconductor imaging device having a plurality of photodiodes and a color filter; and an imaging optical system for guiding light from a subject to the semiconductor imaging device, where a diameter of an aperture (01-08-2009
20090008682Light-Receiving Device - Disclosed is a light-receiving device comprising a substrate provided with at least one light-receiving element and a transparent cover (01-08-2009
20090032852CMOS image sensor - A CMOS (Complementary Metal-Oxide Semiconductor) image sensor is provided. A CMOS image sensor includes a first light-receiving unit converting light into charge, a first floating diffusion region, in which a first potential corresponding to the converted amount of charge is generated and a second floating diffusion region, to which the charge in the first floating diffusion region is transmitted, and in which a second potential is generated, wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitively signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output.02-05-2009
20100163941IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing the same that includes readout circuitry, an electrical junction region, an interconnection, an image sensing device, and an infrared filter. The readout circuitry and the electrical junction region are formed in a first substrate and are electrically connected to each other. The interconnection is formed over the electrical junction region and the image sensing device is formed over the interconnection. The infrared filter is formed on the image sensing device and includes a plurality of thin films.07-01-2010
20110278653SOLID-STATE IMAGE PICKUP DEVICE - In a solid-state image pickup device according to this invention, because a photodiode 11-17-2011
20100171157IMAGE SENSOR WITH COMPACT PIXEL LAYOUT - Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.07-08-2010
20090206378PHOTO SENSOR AND FLAT PANEL DISPLAY USING THE SAME - A photo sensor in a flat panel display includes a first transistor having first, second, and gate electrodes respectively coupled to first, second, and third nodes; a second transistor having first, second, and gate electrodes, respectively coupled to a fourth node, the first node, and a first control signal line; a third transistor having first, second, and gate electrodes, respectively coupled to the second node, the third node, and the first control signal line; a fourth transistor having first, second, and gate electrodes, respectively coupled to a reset power line, the third node, and a reset signal line; a fifth transistor having first, second, and gate electrodes, respectively coupled to a first power source, the first node, and a second control signal line; a sixth transistor having first, second, and gate electrodes, respectively coupled to the second node, output line, and the second control signal line; and a seventh transistor.08-20-2009
20100006911CMOS Image Sensor and Manufacturing Method Thereof - Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes forming an isolation layer in a semiconductor substrate, defining an active region including a photo diode region and a transistor region; forming a gate insulating layer and a gate electrode on the transistor region; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming an insulating layer over an entire surface of the substrate; implanting fluorine ions in an upper surface of the photo diode region; etching the insulating layer to form insulating sidewalls on sides of the gate electrode; forming a high-concentration diffusion region in the transistor region partially overlapping with the second low-concentration diffusion region; and forming a third low-concentration diffusion region on the upper surface of the photo diode region, the third low-concentration diffusion region having a conductivity type opposite to the first low-concentration diffusion region.01-14-2010
20110163361SOLID STATE IMAGING DEVICE - A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.07-07-2011
20100264473ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS - Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.10-21-2010
20120098044SOLID-STATE IMAGING DEVICE - Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.04-26-2012
20090014760CMOS IMAGE SENSOR AND METHOD OF MANUFACTURE - A CMOS image sensor that is capable of substantially completely intercepting unnecessary light incident from the outside and preventing the occurrence of a hot pixel phenomenon and a method of fabricating the same are disclosed. A CMOS image sensor includes an epitaxial layer having a plurality of photodiodes. The epitaxial layer may be formed over a main pixel region and a dummy pixel region, which may be defined on a semiconductor substrate. A device passivation layer may be formed by depositing and planarizing oxide over the epitaxial layer. A silicon oxide layer may be formed by depositing and planarizing silicon oxide over the device passivation layer. The silicon oxide layer may have a concavo-convex type oxide pattern over the main pixel region and a planar oxide pattern over the dummy pixel region. A plurality of dark matrix elements may be formed by sequentially stacking a dual layer and a metal layer over the silicon oxide layer. A planarization process may be performed until the concavo-convex type oxide pattern is exposed. Micro lenses may be formed such that the micro lenses are aligned with photodiodes which will be formed at the main pixel region and the dummy pixel region.01-15-2009
20080272419Solid-state imaging device - A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.11-06-2008
20090065822Image Sensor and Method for Manufacturing an Image Sensor - Provided are methods for manufacturing an image sensor. A method for manufacturing an image sensor can include: forming a readout circuitry on a substrate; forming an electrical junction region in the substrate; forming an interconnection connected to the electrical junction region; and forming an image sensing device on the interconnection. The readout circuitry can be formed on a first substrate. The electrical junction region can be formed in the first substrate to electrically connect the image sensing device with the readout circuitry. The image sensing device can be formed using a second substrate that is then bonded on the interconnection.03-12-2009
20090101950CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A CMOS image sensor and a method for fabricating the same. In one example embodiment, a method for fabricating a CMOS image sensor includes various steps. First, an interlayer dielectric that includes a plurality of metal lines is formed on a semiconductor substrate that includes a photodiode. Next, a trench is formed in the interlayer dielectric. Then, a passivation layer is formed in the trench. Next, the trench is filled by vapor-depositing an additional dielectric layer on the passivation layer. Then, a color filter is formed on the additional dielectric layer. Next, a planarization layer is formed on the color filter. Finally, a micro lens is formed on the planarization layer.04-23-2009
20090200591IMAGE SENSOR WITH LIGHT RECEIVING REGION HAVING DIFFERENT POTENTIAL ENERGY ACCORDING TO WAVELENGTH OF LIGHT AND ELECTRONIC PRODUCT EMPLOYING THE SAME - There is provided a CMOS image sensor and an electronic product using the same. The CMOS image sensor includes a plurality of pixels for embodying colors having different wavelengths. Each of pixels includes a buried barrier layer disposed in a semiconductor substrate and having a barrier potential energy of a conduction band thereof at an equilibrium state, a first layer disposed at a main surface of the semiconductor substrate separated from the buried barrier layer in a vertical direction and having a first potential energy of a conduction band thereof at the equilibrium state, and a second layer disposed between the first region and the buried barrier layer having a second potential energy of a conduction band thereof at the equilibrium state. The second potential energy is higher than the first potential energy and the barrier potential energy and a thickness of the second layer is thicker as the wavelength is longer08-13-2009
20090224298CMOS Image Sensor and Manufacturing Method Thereof - Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.09-10-2009
20120025281SOLID-STATE IMAGING DEVICE - A pixel includes at least first to fourth semiconductor tiers. The first semiconductor tier includes a first semiconductor region that is electrically connected to a first external circuit, a second semiconductor region, and a third semiconductor region that is isolated from the first semiconductor region by the second semiconductor region and that is electrically connected to a second external circuit. The second semiconductor tier includes a MOS transistor that has insulating films and gate conductive electrodes that are electrically connected to a third external circuit. The third semiconductor tier includes a photodiode formed of the second and fourth semiconductor regions. A junction transistor is formed in which the fourth semiconductor region serves as a gate and in which one of the first and fifth semiconductor regions serves as a drain and the other serves as a source.02-02-2012
20120025280SOLID-STATE IMAGE SENSING DEVICE - A solid-state imaging device comprises a plurality of pixels that includes a photoelectric conversion portion, a charge-voltage converter that receives the charge and converts the charge to a voltage, an amplifier that outputs a signal corresponding to a potential of the charge-voltage converter, a transfer portion that transfers a charge from the photoelectric conversion portion to the charge-voltage converter, and a reset transistor that resets a potential of the charge-voltage converter; a connection transistor that connects or disconnects the charge-voltage converter of at least one of the pixels and the charge-voltage converter of at least one of the other pixels. A threshold voltage of the connection transistor is higher than a threshold voltage of the reset transistor.02-02-2012
20090189207Multicolor photodiode array and method of manufacturing - Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector offers high quantum efficiency>95% over wide spectral ranges, high frequency response>10 GHz (@3 dB). The photodiode array of N×N (or M×N) elements is also provided. The array also offers wide spectral detection ranges ultraviolet to 2500 nm with high quantum efficiency>95% and high frequency response of >10 GHz, cross-talk of <0.1%. In the array, each photodiode is independently addressable and is made either as top-illuminated or as bottom illuminated type detector. The photodiode and its array provided in this invention, could be used in multiple purpose applications such as telecommunication, imaging, and sensing applications including surveillance, satellite tracking, advanced lidar systems, etc. The advantages of this photodetectors are that they are uncooled and performance will not be degraded under wide range of temperature variation.07-30-2009
20090189208Multicolor photodiode array and method of manufacturing - Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector offers high quantum efficiency>95% over wide spectral ranges, high frequency response>10 GHz (@3 dB). The photodiode array of N×N (or M×N) elements is also provided. The array also offers wide spectral detection ranges ultraviolet to 2500 nm with high quantum efficiency>95% and high frequency response of >10 GHz, cross-talk of <0.1%. In the array, each photodiode is independently addressable and is made either as top-illuminated or as bottom illuminated type detector. The photodiode and its array provided in this invention, could be used in multiple purpose applications such as telecommunication, imaging, and sensing applications including surveillance, satellite tracking, advanced lidar systems, etc. The advantages of this photodetectors are that they are uncooled and performance will not be degraded under wide range of temperature variation.07-30-2009
20090189206CMOS image sensor and method of fabricating the same - A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.07-30-2009
20090152603IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor that may include transistors, a first dielectric, a crystalline semiconductor layer on and/or over the first dielectric, a photodiode, a dummy region, via contacts, and a second dielectric. A photodiode may be formed by implanting impurity ions into a crystalline semiconductor layer to correspond the pixel region. A dummy region may be formed in the crystalline semiconductor layer excepting a region for the photodiode. Via contacts may penetrate the dummy region, and may be connected to the first metal interconnections. A second dielectric may include a plurality of second metal interconnections on and/or over the crystalline semiconductor layer. The plurality of second metal interconnections may electrically connect the via contacts to the photodiode.06-18-2009
20110266598Solid-state image pickup device - In a rear surface incidence type CMOS image sensor having a wiring layer 11-03-2011
20090146198Photodiodes, image sensing devices and image sensors - Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.06-11-2009
20080237671Method of Fabricating CMOS Image Sensor - A method of fabricating a CMOS image sensor is disclosed that enhances device robustness. The method includes the steps of forming a metal pad on a pad area of a substrate, forming a planarizing layer on the substrate including the metal pad, removing a portion of the planarizing layer to open a surface of the metal pad, forming a protective layer over the substrate including the metal pad, coating a color filter resist layer on the protective layer and selectively exposing the color filter resist layer, coating a microlens resist layer on the color filter resist layer and selectively exposing the microlens resist layer, developing the exposed color filter and microlens resist layers, forming a pad opening by selectively removing the protective layer to open a surface of the metal, and reflowing the microlens pattern.10-02-2008
20080237668METHOD OF FABRICATING BACK-ILLUMINATED IMAGING SENSORS - A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; forming at least one bond pad region extending into the epitaxial layer to a surface of the insulator layer; fabricating at least one bond pad at least partially overlying the at least one bond pad region; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; fabricating a passivation layer substantially overlying the epitaxial layer, the at least one bond pad, and the at least one imaging component; bonding a handle wafer to the passivation layer; and etching through at least a portion of the insulator layer and at least a portion of the bond pad region to expose at least a portion of the at least one bond pad.10-02-2008
20080237667SEMICONDUCTOR DEVICE - A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.10-02-2008
20100117126SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate, a plurality of photodiodes arranged in the substrate in a depth direction of the substrate, a vertical readout gate electrode for reading signal charges in the photodiodes, the vertical readout gate electrode being embedded in the substrate such that the readout gate electrode extends in the depth direction of the substrate, a dark-current suppressing area which covers a bottom portion and a side surface of the readout gate electrode, the dark-current suppressing area including a first-conductivity-type semiconductor area having a uniform thickness on the side surface of the readout gate electrode, and a reading channel area disposed between the first-conductivity-type semiconductor area and the photodiodes, the reading channel area including a second-conductivity-type semiconductor area.05-13-2010
20090309143PIXEL SENSOR CELL, METHODS AND DESIGN STRUCTURE INCLUDING OPTICALLY TRANSPARENT GATE - A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.12-17-2009
20110163363COMS image sensors and methods of manufacturing the same - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.07-07-2011
20090212335COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSOR AND FABRICATING METHOD THEREOF - A method of fabricating a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. First, an isolation structure is formed in a substrate with a photo-sensitive region and a transistor device region in the substrate. The transistor device region includes at least a region for forming a transfer transistor. A dielectric layer and a conductive layer are sequentially formed on the substrate. An ion implantation process is performed to implant a dopant into the substrate below the position for forming a gate of the transfer transistor and in the photo-sensitive region through the conductive layer and the dielectric layer. The conductive layer and the dielectric layer are patterned to at least form the gate structure of the transfer transistor on the transistor device region. Thereafter, a photo diode is formed in the substrate in the photo-sensitive region.08-27-2009
20100084695METHOD OF FABRICATING CMOS IMAGE SENSOR - A CMOS image sensor and a method of fabricating the same. The CMOS image sensor may minimize disappearance of electrons generated by light without transmission of electrons to a transfer gate. A method of manufacturing a CMOS image sensor may include forming a trench over an isolation region of a semiconductor substrate to define an active region including a photodiode region and a transistor region. The method may include forming first conductivity-type ion implanted regions over a trench side wall of a photodiode region and over a region adjacent to the transistor region. The method may include forming second conductivity-type ion implanted regions between a first conductivity-type ion implanted region and a trench, and between a lower part of a transistor region and a first conductivity-type ion implanted region. The method may include forming an isolation layer, forming a gate electrode and a spacer, and/or forming a photodiode.04-08-2010
20100084694IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.04-08-2010
20090050943IMAGERS, APPARATUSES AND SYSTEMS UTILIZING PIXELS WITH IMPROVED OPTICAL RESOLUTION AND METHODS OF OPERATING THE SAME - A pixel array resolution is doubled by adding a plurality of second photodiodes, but only a single, common transfer control line. By controlling a combination of the single, common transfer control line and a transfer control line unique to controlling first transfer transistors in pixels in a row, first and second photodiodes in a pixel can be separately readout.02-26-2009
20100006909COLOR FILTER ARRAY ALIGNMENT MARK FORMATION IN BACKSIDE ILLUMINATED IMAGE SENSORS - A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.01-14-2010
20100078692IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a first pixel having a first photodiode and a first readout circuit and a second pixel having a second photodiode and a second readout circuit. The second pixel is aligned at one side of the first pixel, and a light receiving area of the first photodiode is different from a light receiving area of the second photodiode.04-01-2010
20090179240DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME - The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy ε07-16-2009
20120193692SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE - A semiconductor element includes a base-body region of p-type; a charge-generation buried region of a n-type, implementing a photodiode together with the base-body region, configured to create a first potential valley in the base-body region; an accumulation region of n-type, being buried in a part of the upper portion of the base-body region, configured to create a second potential valley deeper than the first potential valley; a transfer-gate insulation film provided on a surface of the base-body region; a transfer-gate electrode provided on the transfer-gate insulation film, configured to control a potential of a transfer channel formed in the base-body region between the charge-generation buried region and the accumulation region; and a recessed-potential creation mechanism configured to create a stair-like-shaped potential barrier for electronic shuttering.08-02-2012
20120193691BACK-SIDE ILLUMINATION IMAGE SENSOR - A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the first transistor.08-02-2012
20090206377METHOD AND DEVICE FOR REDUCING CROSSTALK IN BACK ILLUMINATED IMAGERS - A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer.08-20-2009
20090283808Photo Sensor - A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.11-19-2009
20090166694Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current.07-02-2009
20090045442SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A first oxide film (02-19-2009
20090090944Image Sensor and Method of Fabricating the Same - Provided is an image sensor and a method of fabricating the image sensor. The image sensor can comprise: a semiconductor substrate comprising a photodiode; a metal wiring layer disposed on the semiconductor substrate and comprising a metal wiring and an interlayer dielectric; a trench formed in the interlayer dielectric to correspond to the photodiode; and a color filter formed in the trench. Accordingly, the distance between the photodiode and the color filter can be significantly reduced by forming the color filter in the trench.04-09-2009
20080210995Image sensor and method for fabricating the same - An image sensor and a method for fabricating the same are disclosed, in which an impurity implantation layer having a predetermined thickness is formed on a source diffusion layer, thereby controlling a substantial contact point between a contact plug and the source diffusion layer upward from a surface of a semiconductor substrate. As a result, it is possible to minimize a length of an open hole, which is a main channel of the contact plug, so that the open hole has the sufficiently large size, thereby inducing the improvement of the contact quality between the contact plug and the source diffusion layer. Also, in case of the CMOS image sensor, in state the impurity implantation layer having the impurity selectively implanted is formed on the source diffusion layer, the impurity implantation layer is electrically connected with the source diffusion layer. Accordingly, without the additional process such as highly-impurity implantation and formation of salicide layer, it is possible for the source diffusion layer to increase the impurity concentration of impurity therein. Eventually, in case of realizing the image sensor according to the present invention, it is possible to the greatest contact quality between the contact plug and the source diffusion layer. In case of realizing the greatest contact quality between the contact plug and the source diffusion layer with the additional formation of the impurity implantation layer, for example, the source diffusion layer normally performs the function of converting the optical charges generated by the photodiode to voltage constituents. Thus, the completed image sensor according to the present invention realizes the great image quality.09-04-2008
20080210992CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A CMOS image sensor that can include a first shallow trench isolation layer and a second shallow trench isolation layer formed in an epitaxial layer on both sides of a predetermined region of the epitaxial layer; a poly gate contacting the first shallow trench isolation layer and the second shallow trench isolation layer and formed over the predetermined region of the epitaxial layer; and a plurality of channels formed in the epitaxial layer and under the poly gate.09-04-2008
20080210997Solid-state image pickup device and manufacturing method thereof - A solid-state image pickup device is provided in which a pixel forming region 4 and a peripheral circuit forming region 09-04-2008
20080210991CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING - A CMOS image sensor capable of preventing leakage current of a transfer transistor and a method of manufacturing thereof are disclosed. Embodiments relate to a complementary metal-oxide-silicon (CMOS) image sensor including a transfer transistor. The transfer transistor includes an epi-layer formed over a semiconductor substrate defined by a photodiode area, an active area, and a device isolation area. A device isolation film may be formed in the device isolation area. A gate electrode may be formed over the epi-layer for the transfer transistor with a gate insulating film interposed therebetween. A first dopant diffusion area may be formed by implanting first dopant ions into the epi-layer of the photodiode area. A potential well area may be formed in the first dopant diffusion area adjacent to the gate electrode. A second dopant diffusion area may be formed by implanting second dopant ions into the epi-layer of a side-surface floating diffusion area of a gate spacer.09-04-2008
20080210994Solid-state imaging devices - A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.09-04-2008
20080210990CMOS IMAGE SENSOR AND FABRICATING METHOD THEREOF - A CMOS image sensor and fabricating method thereof by which capacitance of a floating diffusion region (FD) can be increased. The CMOS image sensor can include an epitaxial layer formed over a semiconductor substrate; a gate electrode formed over the epitaxial layer; a gate metal formed over a floating diffusion region of the epitaxial layer; n+ type source and drain regions formed in the epitaxial layer; a gate spacer formed on both sidewalls of the gate electrode and both sidewalls of the gate metal; an insulating interlayer formed over the epitaxial layer including the gate electrode, the gate spacer and the gate metal layer, the insulating interlayer including a first contact hole extending through the insulating interlayer exposing the source region; a second contact hole extending through the insulating interlayer exposing the gate metal; a first contact plug formed in the first contact hole and connected to the source region; a second contact plug formed in the second contact hole and connected to the gate metal; and a metal line formed over the first contact plug and the second contact plug to electrically connect the source region to the gate metal.09-04-2008
20090289286CMOS Image Sensor Having improved signal eficiency and method for manufacturing the same - A CMOS image sensor and a method for manufacturing the same improves signal efficiency by reducing a dark signal, and includes a substrate having a first conductive type comprising an image area and a circuit area, a STI isolation layer in the substrate for electrical isolation within the circuit area, and a field oxide in the substrate for electrical isolation within the image area.11-26-2009
20080210993SOLID-STATE IMAGE PICKUP DEVICE AND METHOD - The invention provides a solid-state image pickup device and method for realizing a higher sensitivity and a higher S/N ratio especially in the low-luminance region while maintaining a wide dynamic range. Plural pixels are integrated in an array configuration on a semiconductor substrate with each pixel having photodiode PD, which receives light and generates and stores photoelectric charge, transfer transistor Tr09-04-2008
20090294814Three-Dimensional Integrated Circuits and Techniques for Fabrication Thereof - Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a substrate; a digital CMOS circuitry layer adjacent to the substrate; and a first bonding oxide layer adjacent to a side of the digital CMOS circuitry layer opposite the substrate. The top device layer comprises an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer having a buried oxide (BOX) with a thickness of greater than or equal to about 0.5 micrometers; and a second bonding oxide layer adjacent to the analog CMOS and photonics circuitry layer. The bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.12-03-2009
20090278181SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.11-12-2009
20090283807Anti-Reflection Structures For CMOS Image Sensors - Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.11-19-2009
20090289287CMOS Image Sensor and Method of Manufacturing the Same - Disclosed herein are a CMOS image sensor and a method of manufacturing the same, which can reduce current leakage through a plug connecting a photodiode and a transfer transistor to each other, and thereby provide low dark current levels. The CMOS image sensor includes a first epitaxial layer on or in a substrate. A photodiode PD is in the first epitaxial layer. A second epitaxial layer is on or in the substrate (e.g., on the first epitaxial layer). A shallow trench isolation region is in an area of the substrate. A plug is in the substrate (e.g., the second epitaxial layer) connected with the photodiode and spaced apart from the shallow trench isolation region. A transfer transistor having a gate electrode and source/drain regions is connected with the plug.11-26-2009
20090294812Optical Sensor Including Stacked Photosensitive Diodes - A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.12-03-2009
20090294816CMOS image sensor and driving method of the same - Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.12-03-2009
20090294813Optical Sensor Including Stacked Photodiodes - A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.12-03-2009
20090294811IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N12-03-2009
20090008688Unit pixels, image sensors and methods of manufacturing the same - Unit pixels, image sensors and methods for fabricating the image sensor are provided. A unit pixel includes: a photodiode for accumulating photocharges; a floating diffusion region for detecting the photocharges accumulated in the photodiode; a reset element for periodically resetting the floating diffusion region; a drive element for amplifying the photocharges accumulated in the floating diffusion region; a selection element for selecting the unit pixel; and a silicide layer formed on top surfaces of the transfer gate. The photocharges are transferred to the floating diffusion region via a transfer gate.01-08-2009
20090065833CMOS IMAGE SENSOR - A CMOS image sensor is described, based on a substrate and including a transfer transistor, a reset transistor, a source follower transistor, a select transistor, a photodiode and a floating node structure. The substrate includes a floating node area between the transfer transistor and the reset transistor. The floating node structure includes a P-well in the substrate within the floating node area, an N-well in the substrate outside of the floating node region, a lightly N-doped region having a portion in the P-well and another portion connected with the N-well, a heavily N-doped region in the N-well, and a contact plug for coupling the heavily N-doped region to the source follower transistor.03-12-2009
20080246065IMAGING APPARATUS, IMAGING SYSTEM, ITS CONTROLLING METHOD, AND STORAGE MEDIUM STORING ITS PROGRAM - An idling time period after applying a bias to a conversion element until a start of an accumulation of the conversion element for deriving an image and an accumulation period from the start of the accumulation to a termination of the accumulation are measured. An offset correction of the image is conducted by using a dark current accumulation charge quantity in the accumulation calculated based on the measured idling time period and accumulation period and stored dark current response characteristics. Thus, even just after applying the bias to the conversion element, the offset correction can be properly conducted. An imaging apparatus which can execute a good radiographing without increasing costs and a size even just after applying the bias to the conversion element is provided.10-09-2008
20080246064Semiconductor device and electronic device using the same - To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor through the photoelectric conversion element. The other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor. By using transistors which have different threshold voltages for the first transistor and the second transistor, a semiconductor device which can perform detecting of low illuminance can be obtained.10-09-2008
20110204425METHOD AND DEVICE FOR CMOS IMAGE SENSING WITH MULTIPLE GATE OXIDE THICKNESSES - A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer with at least a first part and a second part on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first part of the gate oxide layer is associated with a first thickness, and the second part of the gate oxide layer is associated with a second thickness. The first thickness and the second thickness are different. The first gate region is located on the first part of the gate oxide layer associated with the first thickness, while the second gate region is located on both the first part of the gate oxide layer associated with the first thickness and the second part of the gate oxide layer associated with the second thickness. The first gate region is associated with the first well, and the second gate region is associated with the second well. Additionally, the method includes forming a third well in the substrate, implanting a first plurality of ions to form a first lightly doped source region and a first lightly doped drain region in the first well, implanting a second plurality of ions to form at least a second lightly doped drain region in the second well, and implanting a third plurality of ions to form a source in the second well.08-25-2011
20090166693Image Sensor and Manufacturing Method Thereof - An image sensor and manufacturing method thereof are provided. The image sensor can include a gate on a semiconductor substrate, first and second p-type doping areas below the gate, a third p-type doping area adjacent to the first p-type doping area, and a fourth p-type doping area adjacent to the third p-type doping area. An n-type doping area can be provided in the semiconductor substrate such that at least a portion of the n-type doping area is disposed below the first, third, and fourth p-type doping areas. A floating diffusion area can be provided adjacent to the second p-type doping area.07-02-2009
20080251823Separation Type Unit Pixel Having 3D Structure for Image Sensor and Manufacturing Method Thereof - A separation type unit pixel of an image sensor, which can handle light that incidents onto a photodiode at various angles, and provides a zoom function in a mini camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The separation type unit pixel having a 3 D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer. Accordingly, by forming an area for a photodiode and an area for a pixel almost the same, an10-16-2008
20080251821METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS - A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.10-16-2008
20090309144CMOS Image sensor having a crosstalk prevention structure - In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P12-17-2009
20090050945SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.02-26-2009
20090230444CMOS IMAGE SENSOR CONFIGURED TO PROVIDE REDUCED LEAKAGE CURRENT - A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) includes a semiconductor substrate including a photodiode therein as a light sensing unit. A floating diffusion region of a first conductivity type is provided in the semiconductor substrate, and is configured to receive charges generated in the photodiode. A power supply voltage region of the first conductivity type is also provided in the semiconductor substrate. A reset transistor including a reset gate electrode on a surface of the substrate between the floating diffusion region and a power supply voltage region is configured to discharge charges stored in the floating diffusion region in response to a reset control signal. The reset transistor includes a channel region in the substrate extending between the floating diffusion region and the power supply voltage region such that the floating diffusion region and the power supply voltage regions define source/drain regions for the reset transistor. An impurity region is provided in a first portion of the channel region adjacent to the floating diffusion region. The impurity region has a doping such that the first portion of the channel region adjacent to the floating diffusion region has a different built-in potential than a second portion of the channel region adjacent to the power supply voltage region.09-17-2009
20090166695IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - A method for manufacturing an image sensor having a peripheral circuit unit and a pixel unit includes forming a device isolation layer that defines an active area in the pixel area, on a semiconductor substrate, forming a gate pattern on the active area of the semiconductor substrate, forming a photodiode area at one side of the gate pattern in the semiconductor substrate, vapor-depositing a plurality of dielectric layers on the whole surface of the substrate including the gate pattern, forming a spacer at lateral sides of the gate pattern by removing part of the plurality of dielectric layers by dry etching, and removing the other dielectric layer disposed between the lowermost dielectric layer and the uppermost dielectric layer by wet etching, while leaving a lowermost dielectric layer among the plurality of dielectric layers on the substrate where a floating diffusion area will be formed.07-02-2009
20090166689IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate, readout circuitry, an electrical junction region, a metal interconnection and an image sensing device. The readout circuitry is formed on and/or over the first substrate and the electrical junction region is formed in the first substrate and electrically connected to the readout circuitry. The metal interconnection is electrically connected to the electrical junction region. The image sensing device is formed on and/or over the metal interconnection.07-02-2009
20080277702SOLID-STATE IMAGING DEVICE AND CAMERA HAVING THE SAME - Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.11-13-2008
20080283884CMOS IMAGE DEVICE WITH POLYSILICON CONTACT STUDS - A CMOS image device comprises a pixel array region including a photo diode region, a floating diffusion region, and at least one MOS transistor having a gate and a junction region, a CMOS logic region disposed around the pixel array region, the CMOS logic region including a plurality of nMOS transistors and pMOS transistors, and contact studs formed on the floating diffusion region and the junction region in the pixel array region, the contact studs comprising impurity-doped polysilicon layers.11-20-2008
20080283885Small pixel for CMOS image sensors with vertically integrated set and reset diodes - A pixel of an image sensor, the pixel includes a floating diffusion node to sense photo-generated charge, a reset diode to reset the floating diffusion node in response to a reset signal, and a set diode to set the floating diffusion node.11-20-2008
20080283881Image Sensor and Method for Manufacturing the Same - An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.11-20-2008
20080237670Light receiving element - A structure is provided in a light receiving element having a plurality of light receiving regions, in which noise charges from other light receiving regions to the signal charges of each light receiving region are prevented from becoming superimposed, and each light receiving region can generate accurate electric current signals. The structure is provided with a first light receiving region and a second light receiving region, which are formed on a semiconductor substrate having a first conductivity, and a drain region, which is formed on the semiconductor substrate having a second conductivity. Each light receiving region has at least one light receiving unit that is divided into a plurality of segments and that outputs electric currents corresponding to incident light. The drain region is formed between the first light receiving region and the second light receiving region.10-02-2008
20080283887CMOS Image Sensor - A method of fabricating a CMOS image sensor is disclosed, by which image sensor characteristics are enhanced. In one aspect, the method includes forming a plurality of photodiodes in the photodiode region of a semiconductor substrate; stacking a first insulating layer over the semiconductor substrate including the photodiodes; forming a metal pad on the insulating layer in the pad region of the substrate; forming a second insulating layer over the semiconductor substrate including the metal pad; selectively etching exposed portions of the second insulating layer, using a mask, to form simultaneously a pad opening in the pad region and a trench in the photodiode region; selectively etching portions of the second insulating layer and the first insulating layer under the trench; and forming a slope on lateral sides of at least the second insulating layer.11-20-2008
20080283882SEMICONDUCTOR DEVICE - A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially formed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction forming layer each being a compound semiconductor; a source electrode and a drain electrode located on the Schottky junction forming layer; and a gate electrode disposed between the source and drain electrodes and forming a Schottky junction with the Schottky junction forming layer. The carrier density in the channel layer is inversely proportional to the third power of depth into the channel layer from a top surface of the channel layer, the channel layer has a uniform sheet carrier density, and the top surface of the channel layer has a dopant concentration in a range from 5.0×1011-20-2008
20080303073CMOS Image Sensor - Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging. The CMOS image sensor may include: a semiconductor substrate; at least one photodiode on or in the semiconductor substrate; a first insulating layer on the substrate including the photodiode(s); a plurality of metal lines on and/or in the first insulating layer; a second insulating layer on the first insulating layer including at least some of the metal lines; a patterned light shielding layer on the second insulating layer; and microlenses in a remaining space on the second insulating layer.12-11-2008
20090315087IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an image sensor includes forming an isolation area in a semiconductor substrate, forming a plurality of gate insulating layers and a plurality of gates over a transistor area of the semiconductor substrate, forming a photodiode over the semiconductor substrate between the gates and the isolation area, forming a nitride layer over the semiconductor substrate such that tensile stress is applied to the transistor area of the semiconductor substrate, forming a floating diffusion layer over the semiconductor substrate between the gates, and removing the nitride layer over the photodiode, and forming an oxide layer over the photodiode.12-24-2009
20090014763CMOS image sensor with photo-detector protecting layers - An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector is formed to a side of the first gate electrode within the semiconductor substrate. The first protecting layer is formed over the first gate electrode and the photo-detector. The first spacers are formed over the first protecting layer to the sides of the first gate electrode. The second protecting layer is formed over the first protecting layer and the spacers. The first and second protecting layers are for preventing a contaminant from reaching the photo-detector.01-15-2009
20080272416Image sensor and method of manufacturing the same - Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.11-06-2008
20080230817SEMICONDUCTOR PHOTODETECTOR DEVICE - A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first conductivity type semiconductor layer a formed on a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on the semiconductor layer; and a first conductivity type second semiconductor region formed on the semiconductor layer and separated from the first semiconductor region. The current amplifying operation section includes: the second semiconductor region; a second conductivity type third semiconductor region formed in the semiconductor substrate; a second conductivity type fourth semiconductor region formed on the third semiconductor region and separated from the second semiconductor region.09-25-2008
20080265296IMAGING ELEMENT AND IMAGING DEVICE - An imaging element comprises: an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises: a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light; a charge storage part that stores the signal charge; and a reading transistor that reads the signal charge stored in the charge storage part.10-30-2008
20080272418Semiconductor component comprising a buried mirror - A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.11-06-2008
20110266599SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.11-03-2011
20080272417Image Sensor and Method for Manufacturing the Same - An image sensor and method for manufacturing the same are provided. The image sensor can include an isolation area and active area on a substrate; a photodiode area and a transistor area provided on the active area; a gate insulating layer on the transistor area; and a gate electrode provided on the gate insulating layer and a portion of the photodiode area by extending over a portion of the isolation area between the transistor area and the photodiode area. In one embodiment, the gate electrode can be a gate electrode of a drive transistor of a 3-T type image sensor.11-06-2008
20080272420CMOS image sensor and manufacturing method thereof - A gate insulation layer with a high dielectric constant for a CMOS image sensor formed by a damascene process. A silicide layer on a gate electrode layer is formed in both a pixel region and a peripheral circuit region, and a silicide layer on a source/drain region is formed only in a peripheral circuit.11-06-2008
20080283886Small pixel for image sensors with JFET and vertically integrated reset diode - A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node.11-20-2008
20080265297CMOS image sensor and method for manufacturing the same - A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.10-30-2008
20080258187METHODS, SYSTEMS AND APPARATUSES FOR THE DESIGN AND USE OF IMAGER SENSORS - An imager sensor cell design having readout circuitry contained within the photodiode region.10-23-2008
20090179241Photosensor and photo IC equipped with same - The present invention provides a photosensor formed in a semiconductor substrate having a silicon substrate, an insulating layer formed over the silicon substrate, and a silicon semiconductor layer formed over the insulating layer, comprising an ultraviolet photosensitive element formed in the silicon semiconductor layer, and at least one visible light photosensitive element formed in the silicon substrate.07-16-2009
20090179242IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection and readout circuitry over a first substrate, a metal layer over the metal interconnection, and an image sensing device electrically connected to the metal layer. According to embodiments, an electric field may not be generated on and/or over an Si surface. This may contribute to a reduction in a dark current of a 3D integrated CMOS image sensor.07-16-2009
20090179239CMOS image sensors and methods of manufacturing the same - A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.07-16-2009
20090127598IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a first impurity region formed in the semiconductor substrate spaced from the photodiode, a second impurity region formed in the semiconductor substrate spaced from the first impurity region, a first gate formed over the semiconductor substrate between the photodiode and the first impurity region, a second gate formed over the semiconductor substrate between the first impurity region and the second impurity region, a spacer formed over the fourth impurity region and a first sidewall of the second gate, and an insulating film formed over the photodiode, the first gate, the first impurity region and a second sidewall and a portion of the uppermost surface of the second gate.05-21-2009
20090127599Image Sensor and Method of Manufacturing the Same - Provided is an image sensor. The image sensor includes a semiconductor substrate, an interlayer dielectric, metal interconnections, a first electrode, a lower electrode, a second electrode, and a photodiode. The semiconductor substrate has at least one transistor thereon. The interlayer dielectric is on the semiconductor substrate. The metal interconnections pass through the interlayer dielectric. The first electrode is in the interlayer dielectric between the metal interconnections. The lower electrode is on the interlayer dielectric to connect to the metal interconnection. The second electrode is on the interlayer dielectric at a position corresponding to the first electrode, and a gap region is between the second electrode and the lower electrode. The photodiode is on the interlayer dielectric with the lower electrode and the second electrode.05-21-2009
20090127600IMAGE SENSOR AND FABRICATING METHOD THEREOF - An image sensor and fabricating method thereof are disclosed by which damage to a protective layer can be prevented in a manner of reducing thermal stress of an uppermost metal line in performing thermal treatment for enhancing the dark characteristic. Such damage can be prevented by forming a poly layer pattern in an insulating interlayer on at least one side of the uppermost layer metal line.05-21-2009
20090166691Image Sensor and Method of Manufacturing the Same - Image sensors and manufacturing methods thereof are provided. An image sensor according to an embodiment comprises a second conductive type diffusion layer formed on a first conductive type substrate; a device isolating layer formed in the second conductive type diffusion layer to isolate the second conductive type diffusion layer according to unit pixel; a gate formed on the second conductive type diffusion layer; a first conductive type area formed on a surface of the second conductive type diffusion layer at one side of the gate; a first conductive type well area formed in the second conductive type diffusion layer at the other side of the gate; and a floating diffusion area formed in the first conductive type well area.07-02-2009
20090166690Image Sensor and Method of Manufacturing the Same - An image sensor and manufacturing method thereof are provided. The image sensor can include a gate, a channel region, a first p-type doped region, a second p-type doped region, an n-type doped region, and a floating diffusion region. The gate can be disposed on a semiconductor substrate, and the channel region can be disposed in the semiconductor substrate under the gate. The first p-type doped region can be disposed at a side of the gate and can be adjacent to the channel region. The second p-type doped region can be disposed under the first p-type doped region and spaced apart from the gate. The n-type doped region can be disposed under the first and second p-type doped regions, and the floating diffusion region can be disposed at another side of the gate.07-02-2009
20090140305IMAGING DEVICE - A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr06-04-2009
20090140304SOLID-STATE IMAGING DEVICE AND CAMERA - Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.06-04-2009
20120139018Solid-state imaging device and method of manufacturing solid-state imaging device - A solid-state imaging device includes: a gate electrode arranged over an upper surface of a semiconductor substrate; a photoelectric conversion portion formed over the semiconductor substrate to position under the gate electrode; an overflow barrier formed over the semiconductor substrate to position in a portion other than a position facing the gate electrode in a planar direction and adjoin a side face of the photoelectric conversion portion; and a drain formed over the semiconductor substrate to adjoin a side face of the overflow barrier opposite to a side face adjoining the photoelectric conversion portion.06-07-2012
20090309142IMAGER DEVICES HAVING DIFFERING GATE STACK SIDEWALL SPACERS, METHOD FOR FORMING SUCH IMAGER DEVICES, AND SYSTEMS INCLUDING SUCH IMAGER DEVICES - Imager devices have a sensor array and a peripheral region at least partially surrounding the sensor array. At least one transistor in the peripheral region has a gate stack sidewall spacer that differs in composition from a gate stack sidewall spacer on at least one transistor in the sensor array. Imaging systems include such an imager device configured to communicate electrically with at least one electronic signal processor and at least one memory storage device. Methods of forming such imager devices include providing layers of oxide and nitride materials over transistors on a workpiece, and using etching processes to form gate stack sidewall spacers on the transistors.12-17-2009
20090078978IMAGE SENSOR HAVING A CHARGE STORAGE REGION PROVIDED WITHIN AN IMPLANT REGION - A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.03-26-2009
20090050944CMOS image sensor and method of fabrication - A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.02-26-2009
20090065825Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor comprises an interlayer dielectric, lines, and a crystalline semiconductor layer including photodiodes and a device isolation region. The interlayer dielectric can be formed on a first substrate comprising a readout circuitry. The lines pass through the interlayer dielectric to connect with the readout circuitry, and each line is formed according to unit pixel. The crystalline semiconductor layer can be bonded on the interlayer dielectric including the lines. The photodiodes, formed inside the crystalline semiconductor layer, are electrically connected with the lines. The device isolation region comprises conductive impurities and is formed inside the crystalline semiconductor layer so that the photodiodes can be separated according to unit pixels.03-12-2009
20090101948CMOS image sensors having transparent transistors and methods of manufacturing the same - CMOS image sensors having transparent transistors and methods of manufacturing the same are provided. The CMOS image sensors include a photodiode and at least one transistor formed on the photodiode. The image sensor may include a plurality of transistors wherein at least one of the plurality of transistors is a transparent transistor.04-23-2009
20090085080Image Sensor and Method for Manufacturing The Same - Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.04-02-2009
20090085076Photo Sensor and a Method for Manufacturing Thereof - According to a method of manufacturing photo sensor, a diode can be formed by one lithography step. In addition, the source/drain is arranged on a gate dielectric layer to avoid the conventional plug structure. Moreover, a diode stack is formed on one of the source/drain to simplify the structure of the photo sensor.04-02-2009
20090085079Image Sensor and Method for Manufacturing The Same - An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region.04-02-2009
20090085077Photo Sensor and a Method for Manufacturing Thereof - A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of phtoresist to reduce a side leakage current.04-02-2009
20110140182SOLID-STATE IMAGING DEVICE WHICH CAN EXPAND DYNAMIC RANGE - According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT06-16-2011
20090101949IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor having maximized photosensitivity includes a photodiode and a transistor formed over the semiconductor substrate. A first passivation layer is formed over the semiconductor substrate including the transistor and the photodiode, a pre-metal dielectric layer formed over the first passivation layer and insulating layers having metal wirings formed over the pre-metal dielectric layer. A trench is formed in the insulating layers and the pre-metal dielectric layer exposing a portion of the first passivation layer formed over the photodiode while a second passivation layer formed on sidewalls and a bottom of the trench and over the uppermost surface of the insulating layer such that the second passivation layer directly contacts the portion of the first passivation layer formed over the photodiode. A photosensitive material is then formed over the second passivation layer and buried in the trench.04-23-2009
20090101953PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode.04-23-2009
20090101951CMOS Image Sensor and Fabricating Method Thereof - A CMOS image sensor and fabricating method thereof are disclosed. The method includes forming a plurality of photodiode regions on a semiconductor substrate, forming a plurality of color filters respectively corresponding to the photodiode regions, forming a planarization layer on the color filters, forming a protective layer on the planarization layer, and forming a microlens layer comprising a plurality of microlenses corresponding to the photodiode regions by depositing a low-temperature oxide layer on the protective layer and then patterning the low-temperature oxide layer. After the planarization layer is formed, the protective layer is formed by plasma processing. Thus, the planarization layer can be protected from chemical penetration via numerous pin holes in the microlens layer in the course of wet processing. Accordingly, the method prevents the microlens from lifting from the planarization layer.04-23-2009
20090101947Image sensor device and fabrication method thereof - An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel array therein. A first transparent layer with a curved surface is disposed on the substrate. A micro lens array is conformally disposed on the curved surface of the first transparent layer and corresponds to the pixel array in the substrate. The invention also discloses an electronic assembly for an image sensor device and a fabrication method thereof.04-23-2009
20120104479SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.05-03-2012
20120104478SOLID STATE IMAGING DEVICE - An island-shaped semiconductor constituting a pixel includes a first semiconductor N05-03-2012
20080296644CMOS IMAGE SENSORS AND METHODS OF FABRICATING SAME - A CMOS image sensor includes an image transfer transistor therein. This image transfer transistor includes a semiconductor channel region of first conductivity type and an electrically conductive gate on the semiconductor channel region. A gate insulating region is also provided. The gate insulating region extends between the semiconductor channel region and the electrically conductive gate. The gate insulating region includes a nitridated insulating layer extending to an interface with the electrically conductive gate and a substantially nitrogen-free insulating layer extending to an interface with the semiconductor channel region. The nitridated insulating layer may be a silicon oxynitride (SiON) layer.12-04-2008
20090212336PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along a side surface and a bottom surface of an element isolation region, a reference voltage to the semiconductor region of the second conduction-type arranged below source and drain regions of the amplifying transistor in a region below a gate electrode of the amplifying transistor.08-27-2009
20090200590IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK - An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.08-13-2009
20090200588BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE - A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.08-13-2009
20090200586BACKSIDE ILLUMINATED IMAGING SENSOR WITH SILICIDE LIGHT REFLECTING LAYER - A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.08-13-2009
20090200589BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.08-13-2009
20090108309CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS image sensor, which can monitor accurate overlay information even when a dual microlens is employed, and a method for manufacturing the same are disclosed. The CMOS image sensor includes a substrate having a photosensitive element formed therein; a light shield layer formed over the substrate and having a portion spatially corresponding to the photosensitive element; a color filter formed over the light shield layer; and a microlens having a first microlens portion and a second microlens portion formed spaced apart over the color filter, the second microlens portion being formed in a region surrounded by the first microlens portion.04-30-2009
20090230443RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM - A radiation imaging apparatus comprises a pixel region, on an insulating substrate 09-17-2009
20090212337SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material film as a mask. Moreover, a trench is formed by further processing the recess in a processing region. A half-buried dielectric film and a STI are formed by burying a dielectric material in the recess and the trench to remove the hard mask material film. Next, two electrodes are formed so as to overlap the half-buried dielectric film and the STI, respectively, and impurities are implanted into the imaging region using one electrode and the half-buried dielectric film as a mask, and hence a n-type region constituting a photodiode is formed in a region being in contact with the p-type region in the semiconductor substrate.08-27-2009
20090242950ACTIVE PIXEL SENSOR HAVING TWO WAFERS - A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.10-01-2009
20090236644HIGH EFFICIENCY CMOS IMAGE SENSOR PIXEL EMPLOYING DYNAMIC VOLTAGE SUPPLY - A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.09-24-2009
20090127597Photodiode Structure - A photodiode structure including a semiconductor of a first conductivity type, the semiconductor having a main surface, a first well formed in the semiconductor at the main surface thereof, the first well being of a second conductivity type opposite to the first conductivity type. A second well formed in the semiconductor at the main surface thereof laterally outside the first well, the second well being of the second conductivity type, and a first terminal electrically connecting the first well and the second well, and a second terminal connecting the semiconductor such that a depletion region of laterally varying distance to the main surface results from applying a reverse voltage to the first and second terminals.05-21-2009
20090242949CMOS IMAGE SENSOR WITH REDUCED DARK CURRENT - A carbon-containing semiconductor layer is formed on exposed surfaces of a p-doped semiconductor layer abutting sidewalls of a shallow trench. Following formation of a dielectric layer on the carbon-containing semiconductor layer, a surface pinning layer having a p-type doping is formed underneath the carbon-containing semiconductor layer. A shallow trench isolation structure and a photodiode are subsequently formed. Diffusion of defects directly beneath the shallow trench isolation structure, now contained in the carbon-containing semiconductor layer, is suppressed. Further, boron diffusion into the shallow trench isolation structure and into the photodiode is also suppressed by the carbon-containing semiconductor layer, providing reduction in dark current and enhancement of performance of the photodiode.10-01-2009
20090250734PIXEL WITH ASYMMETRIC TRANSFER GATE CHANNEL DOPING - A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.10-08-2009
20100155797CMOS image sensors - CMOS image sensors and methods of manufacturing the same are provided, the CMOS image sensors include an epitaxial layer, a photodiode, a transfer transistor, CMOS transistors, first metal wirings and a second metal wiring formed on a substrate. The substrate may have a photodiode region, a floating diffusion region, an active pixel sensor (APS) array circuit region and a peripheral circuit region. The photodiode may be formed on the epitaxial layer in the photodiode region. The transfer transistor may be formed on the epitaxial layer in the floating diffusion region. The CMOS transistors may be formed on the epitaxial layer in the APS array circuit region and the peripheral circuit region. The first metal wirings may be formed over the photodiode region. The second metal wiring may be formed on one of the first metal wirings. The second metal wiring may be located higher than the first metal wirings.06-24-2010
20100155796SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole penetrating the semiconductor substrate through an insulating film formed to include a uniform thickness, used also as an alignment mark, and configured to draw out an electrode to the back side of the semiconductor substrate. The device further includes a pad provided on the back side of the semiconductor substrate, and connected to the back side drawn electrode.06-24-2010
20100187582SOLID-STATE IMAGING DEVICE HAVING TRANSMISSION GATES WHICH PASS OVER PART OF PHOTO DIODES WHEN SEEN FROM THE THICKNESS DIRECTION OF THE SEMICONDUCTOR SUBSTRATE - A solid-state imaging device having a plurality of image pixels arranged along a main surface of a semiconductor substrate, wherein each of the plurality of image pixels includes a photodiode that converts incident light into an electric charge and a transmission gate that is formed so as to have a crossing area that partially passes over the photodiode when seen from the thickness direction of the semiconductor substrate. The transmission gate of the solid-state imaging device is formed in a manner that (i) a first region including a laminated body of a silicon film and a silicide film, and (ii) a second region that includes the silicon film and does not include the silicide film, both arranged along a main surface of the semiconductor substrate, and the second region in the transmission gate is formed in at least one part of the crossing area.07-29-2010
20100187581SOLID-STATE IMAGE SENSING DEVICE AND CAMERA SYSTEM USING THE SAME - A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.07-29-2010
20100019294METHOD AND APPARATUS FOR DECREASING STORAGE NODE PARASITIC CHARGE IN ACTIVE PIXEL IMAGE SENSORS - Methods, systems and apparatuses for an imager that improve the quality of a captured image. The imager includes a pixel having a photosensor that generates charge in response to receiving electromagnetic radiation and a storage region that stores the generated charge. A protection region assists in keeping undesirable charge from reaching the storage region.01-28-2010
20090078977SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.03-26-2009
20090078976SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.03-26-2009
20090078973Image Sensor Element For Backside-Illuminated Sensor - Provides is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.03-26-2009
20090294815SOLID STATE IMAGING DEVICE INCLUDING A SEMICONDUCTOR SUBSTRATE ON WHICH A PLURALITY OF PIXEL CELLS HAVE BEEN FORMED - A solid state imaging device including a pixel region where a plurality of pixel cells 12-03-2009
20100276737PIXEL OF IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.11-04-2010
20090020795SOLID-STATE IMAGING ELEMENT AND METHOD FOR FABRICATING THE SAME - A solid-state imaging element includes a photodiode formed in an upper portion of a semiconductor substrate to perform a photoelectric conversion, a silicon dioxide film formed on the substrate to cover the photodiode, and a silicon nitride film formed on the silicon dioxide film. The silicon nitride film has a thinner portion smaller in thickness than at least an end portion of the silicon nitride film entirely or partly over the photodiode.01-22-2009
20090020794Image Sensor and Method of Manufacturing the Same - Provided are an image sensor and a method of manufacturing the same. The image sensor can be vertically arranged image sensor where the photodiode is provided above the circuitry on the substrate. The photodiode can be formed on a lower electrode provided electrically connected to a CMOS circuit on a substrate. The photodiode can have a PIN or PI photodiode structure including an intrinsic layer on the lower electrode and a conductive type layer on the intrinsic layer. A salicide layer can be disposed on the intrinsic layer, and the conductive type conduction layer can be disposed on the salicide layer. The intrinsic layer can be formed to create a light condensing portion, providing a convex-shaped upper surface.01-22-2009
20100127314PHOTODIODES AND FABRICATION THEREOF - A photodiode includes an anode (05-27-2010
20090026510Image sensor and method for fabricating the same - An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.01-29-2009
20090200587Masked laser anneal during fabrication of backside illuminated image sensors - A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.08-13-2009
20090321799Method and apparatus for increasing conversion gain in imagers - A method, apparatus, and system providing a pixel having increased conversion gain by decreasing the size of an output charge storage region to less than that of a photosensor. A pixel readout is executed by multiple sampling signals based on portions of charge transferred from the photosensor to the storage region and combining the sampled signals in either the analog domain or the digital domain into a representative pixel output signal.12-31-2009
20080296642PHOTODIODE AND PHOTO IC USING SAME - The present invention provides a photodiode comprising a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.12-04-2008
200901843493D BACKSIDE ILLUMINATED IMAGE SENSOR WITH MULTIPLEXED PIXEL STRUCTURE - A three-dimensional pixel array, a method of manufacturing a pixel array and an imager including the three-dimensional pixel array. The three-dimensional array includes multiple groups of pixels, each group of pixels including a first layer and a second layer. The first layer includes multiple photosensitive elements, one per pixel in the group, at least one floating diffusion region connected to each photosensitive element in the group via at least one respective transfer gate per pixel and multiple transfer gate lines, at least two transfer gate lines connected to each respective transfer gate in each row of pixels. The second layer includes at least a rest transistor per group and a source follower transistor coupled to the shared floating diffusion in the first layer.07-23-2009
20090114959Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors - A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.05-07-2009
20080308852IMAGE SENSOR CIRCUITS INCLUDING SHARED FLOATING DIFFUSION REGIONS - An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.12-18-2008
20090114964IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate having a lower wiring line and electric circuitry formed therein, a bonding layer formed over the first substrate, a second substrate bonded to the first substrate via the bonding layer, a vertical-type photodiode formed in the second substrate, and a contact plug formed in the photodiode and the bonding layer and electrically connected to the lower wiring line.05-07-2009
20090114962Image Sensor and Method for Manufacturing Thereof - Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a first pixel including a first photodiode and a first gate; a second pixel adjacent the first pixel and including a second photodiode and a second gate; and a barrier layer between the first photodiode and the second photodiode. The barrier layer can be formed by implanting ions into a semiconductor substrate at a region between adjacent photodiodes. A shallow trench isolation (STI) can be omitted in the regions between adjacent photodiodes by using the ion-implanted barrier layer to isolate the photodiodes from each other.05-07-2009
20090114961Image Sensor - Provided is an image sensor. According to embodiments, the subject image sensor can include a photodiode for converting incident light into electrical signals, a reset transistor for resetting a voltage value of a unit pixel, a drive transistor for providing an output voltage, a select transistor for selecting the unit pixel, a storage capacitor for storing electrons leaking from the photodiode, and a switching transistor for controlling the flow of charge to and from the storage capacitor. The switching transistor can be disposed connected to a node between the photodiode and the reset transistor, and the storage capacitor can be disposed at a side of the switching transistor.05-07-2009
20090114960Image Sensor and a Method for Manufacturing the Same - An image sensor and method for manufacturing the same are provided. According to an embodiment, the image sensor includes a photodiode on a semiconductor substrate according to unit pixels; an insulating layer arranged on the semiconductor substrate; and an inter metal dielectric (IMD) including metal wirings arranged on the insulating layer. A trench is provided through the IMD in a region corresponding to the photodiode for each unit pixel; and a color filter is arranged filling the trench. The color filter can function as a wave guide to improve the photosensitivity of the image sensor.05-07-2009
20080303071Image Sensor and Method for Manufacturing the Same - An image sensor and a fabricating method thereof are provided. A pixel area and a peripheral circuit area can have a step difference on a semiconductor substrate. A Complimentary Metal Oxide Semiconductor (CMOS) circuit can be provided on the pixel area, and an interlayer dielectric layer can be provided on the pixel area and the peripheral circuit area. A photodiode can be provided on the interlayer dielectric layer of the pixel area such that the top of the photodiode, or an intrinsic layer of the photodiode, is about even with the top of the interlayer dielectric layer of the peripheral circuit area.12-11-2008
20100219457SOLID-STATE IMAGING DEVICE - It is an object to provide an image sensor having a sufficiently-large ratio of a surface area of a light-receiving section to an overall surface area of one pixel. This object is achieved by a solid-state imaging device comprising: a signal line formed on a substrate; an island-shaped semiconductor arranged on the signal line; and a pixel selection line connected to a top of the island-shaped semiconductor, wherein the island-shaped semiconductor includes: a first semiconductor layer formed as a bottom portion of the island-shaped semiconductor and connected to the signal line; a second semiconductor layer formed above and adjacent to the first semiconductor layer; a gate connected to the second semiconductor layer through a dielectric film; a charge storage section comprised of a third semiconductor layer connected to the second semiconductor layer and adapted, in response to receiving light, to undergo a change in amount of electric charges therein; and a fourth semiconductor layer formed above and adjacent to the second and third semiconductor layers, and wherein the pixel selection line is comprised of a transparent conductive film, and a part of the gate is disposed inside a depression formed in a sidewall of the second semiconductor layer.09-02-2010
20090072284IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY - In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.03-19-2009
20090072281CMOS image sensor layout capable of removing difference between Gr and Gb sensitivities and method of laying out the CMOS image sensor - Provided is a layout of a CMOS image sensor having an asymmetrical pixel structure in which a plurality of photodiodes may share a transistor block. The layout may include a first region in which a plurality of photodiodes are arranged asymmetrically on a semiconductor substrate, a second region including a metal shield layer arranged on an upper surface of the first region, and a third region arranged on an upper surface of the second region. The metal shield layer may be arranged asymmetrically according to the layout of the photodiodes.03-19-2009
20090072283CMOS image sensor and method for manufacturing the same - A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.03-19-2009
20090072282Image Sensor and Method for Manufacturing the Same - Provided is an image sensor. In the image sensor, a transistor region is on a substrate, and a photo diode region is at one side of the transistor region. A dielectric layer is formed on the transistor region and the photo diode region. A metal line is formed on the dielectric layer in the transistor region. A color filter is formed on the dielectric layer in the photo diode region.03-19-2009
20090108310CMOS image sensor and fabricating method thereof - A CMOS image sensor and fabricating method thereof are disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The present invention includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.04-30-2009
20110127593PHOTOELECTRIC CONVERSION DEVICE AND ITS MANUFACTURING METHOD - A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric conversion layer formed on the lower electrode, an upper electrode formed from a transparent conductive film on the photoelectric conversion layer, the upper electrode being formed so as to be contained within an upper surface of the photoelectric conversion layer as viewed from a top, and a protective film (compound layer or the like) formed so as to protect a part of an upper surface of the photoelectric conversion layer located outside the upper electrode.06-02-2011
20110024808SUBSTRATE BIAS FOR CMOS IMAGERS - A CMOS image sensor is disclosed. The CMOS imager includes a lightly doped semiconductor substrate of a first conductivity type. At least one CMOS pixel of a second conductivity type is formed in the semiconductor substrate. The semiconductor substrate is configured to receive a bias voltage applied for substantially depleting the semiconductor substrate and for forming a depletion edge within the semiconductor substrate. A well of the second conductivity type substantially surrounds the at least one CMOS pixel to form a depletion region about the at least one CMOS pixel operable to form a minimum predetermined barrier to the depletion edge within the semiconductor substrate to pinch off substrate bias in proximity to the return contact.02-03-2011
20110024809RING PIXEL FOR CMOS IMAGERS - A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a transfer gate formed about the sense node; and at least one photodiode formed about the transfer gate. A reset transistor, a source follower transistor, and a row select transistor are located substantially to one side of the CMOS pixel substantially adjacent to the photodiode. The sense node is operable to be floating. An implant may be formed about the photodiode configured to step potential in a direction toward the sense node.02-03-2011
20110024810SOI-BASED CMOS IMAGERS EMPLOYING FLASH GATE/CHEMISORPTION PROCESSING - A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide layer is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.02-03-2011
20110024807SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes a semiconductor substrate having at least one surface provided with a semiconductor element, wherein the semiconductor substrate includes a region of a first conductivity type, the region being formed in a surface layer portion of the semiconductor substrate; a first diffusion region of a second conductivity type, the first diffusion region having a first impurity concentration and being formed in the surface layer portion, and a pn junction being formed between the first diffusion region and the region of the first conductivity type; and a first metal silicide film formed on part of a portion of the surface corresponding to the first diffusion region.02-03-2011
20090065831Image Sensor and Method for Manufacturing the Same - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate including a CMOS circuit, a dielectric layer including a metal interconnection on the semiconductor substrate, a bottom electrode on the metal interconnection, in which the bottom electrode has at least one protrusion, a photodiode on the dielectric layer and the bottom electrode, and a top electrode on the photodiode.03-12-2009
20090065830Image Sensor and a Method for Manufacturing the Same - An image sensor and manufacturing method thereof are provided. A semiconductor substrate can include a center region and an edge region, each with a gate. A first impurity region and a second impurity region can be provided in the semiconductor substrate to a first side of each gate. A floating diffusion region can be provided to a second side of teach gate. A third impurity region can be provided in the semiconductor substrate to the first side of the gate in the edge region.03-12-2009
20090065829Image Sensor and Method for Manufacturing the Same - Provided are image sensors and a method of manufacturing the same. The image sensor can include a semiconductor substrate having a metal line and a readout circuitry formed thereon; a photodiode on the semiconductor substrate, the photodiode including a first impurity region and a second impurity region horizontally arranged in a crystalline region; and a first contact and a second contact penetrating the photodiode. The first contact can penetrate the first impurity region of the photodiode, and the second contact can penetrate the second impurity region to connect with the metal line.03-12-2009
20090065828Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be formed on the first substrate to connect with the readout circuitry and the peripheral circuitry. A crystalline semiconductor layer can be provided on a portion of the interlayer dielectric corresponding to the pixel portion through a bonding process. The crystalline semiconductor layer can include a first photodiode and second photodiode. The first and second photodiodes can be defined by device isolation trenches in the crystalline semiconductor layer. A device isolation layer can be formed on the crystalline semiconductor layer comprising the device isolation trenches. An upper electrode layer passes through the device isolation layer to connect with a portion of the first photodiode. An expose portion can be formed in the upper electrode layer to selectively expose an upper region of the first photodiode. A passivation layer can be formed on the first substrate on which the expose portion is provided.03-12-2009
20090065827Image Sensor and Manufacturing Method Thereof - Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate. An interlayer dielectric is formed on the first substrate, and comprises a lower line therein. A crystalline semiconductor layer is bonded to the interlayer dielectric. A photodiode can be formed in the crystalline semiconductor layer, and comprises a first impurity region and a second impurity region. A via hole can be formed passing through the crystalline semiconductor layer and the interlayer dielectric to expose the lower line. A plug is formed inside the first via hole to connect with only the lower line and the first impurity region. A device isolation region can be formed in the crystalline semiconductor layer to separate the photodiode according to unit pixel.03-12-2009
20090065826Image Sensor and Method for Manufacturing the Same - Provided is an image sensor. The image sensor can include a first substrate, an image sensing device and a light shielding layer. The first substrate includes a readout circuitry and an interconnection. The image sensing device is formed on the interconnection. The light shielding layer is formed in portions of the image sensing device on a boundary between pixels.03-12-2009
20090065824Image Sensor and Manufacturing Method Thereof - An image sensor can be formed of a first substrate having a readout circuitry, an interlayer dielectric, and lower lines, and a second substrate having a photodiode. The first substrate comprises a pixel portion and a peripheral portion. The readout circuitry is formed on the pixel portion. The interlayer dielectric is formed on the pixel portion and the peripheral portion. The lower lines pass through the interlayer dielectric to electrically connect with the readout circuitry and the peripheral portion. The photodiode is bonded to the first substrate and etched to correspond to the pixel portion. A transparent electrode is formed on the interlayer dielectric on which the photodiode is formed such that the transparent electrode can be connected with the photodiode and the lower line in the peripheral portion. A first passivation layer can be formed on the transparent electrode. In one embodiment, the first passivation layer includes a trench exposing a portion of the transparent electrode. Then, an upper line can be formed on the peripheral portion and in the trench to shield a lateral side of the photodiode.03-12-2009
20110031542METHOD TO OPTIMIZE SUBSTRATE THICKNESS FOR IMAGE SENSOR DEVICE - Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.02-10-2011
20110108897IMAGE SENSOR - An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion.05-12-2011
20110115004EMBEDDED PHOTODETECTOR APPARATUS IN A 3D CMOS CHIP STACK - An embedded photodetector apparatus for a three-dimensional complementary metal oxide semiconductor (CMOS) stacked chip assembly having a CMOS chip and one or more thinned CMOS layers is provided. At least one of the one or more thinned CMOS layers includes an active photodiode area defined within the one or more thinned CMOS layers, the active photodiode area being receptive of an optical signal incident thereon, and the active photodiode area comprising a bulk substrate portion of the thinned CMOS layer. The bulk substrate portion has a diode photodetector formed therein.05-19-2011
20090057733Image Sensor and a Method for Manufacturing the Same - An image sensor and manufacturing method thereof are provided. A semiconductor substrate can include a light blocking region and a light receiving region. A photodiode can be formed in the light blocking region and in the light receiving region. A gate can be disposed at a side of the photodiode in the light receiving region, and a light blocking gate can be disposed on the photodiode in the light blocking region. A salicide layer can be formed on the light blocking gate.03-05-2009
20110210383IMAGING DEVICE - First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.09-01-2011
20090032853CMOS image sensors and methods of fabricating the same - CMOS image sensors and methods of fabricating the same. The CMOS image sensors include a pixel array region having an active pixel portion and an optical block pixel portion which encloses the active pixel portion. The optical block pixel portion includes an optical block metal pattern for blocking light. The optical block metal pattern may be connected to a ground portion.02-05-2009
20100163942CMOS IMAGE SENSOR HAVING DOUBLE GATE INSULATOR THEREIN AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.07-01-2010
20100163940IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a photodiode, a floating diffusion region, a reset transistor, and a drive transistor. The photodiode generates photocharges. The floating diffusion region accumulates the photocharges. The reset transistor has a source connected to the floating diffusion region, and has a gate and a drain connected to each other to perform a reset function. The drive transistor receives the photocharges and serves as a source follower buffer amplifier.07-01-2010
20090321800SEMICONDUCTOR DEVICE INCLUDING SOLID STATE IMAGE PICKUP DEVICE, AND PORTABLE ELECTRONIC APPARATUS - A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.12-31-2009
20110079833Semiconductor device and method for manufacturing same - A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material film as a mask. Moreover, a trench is formed by further processing the recess in a processing region. A half-buried dielectric film and a STI are formed by burying a dielectric material in the recess and the trench to remove the hard mask material film. Next, two electrodes are formed so as to overlap the half-buried dielectric film and the STI, respectively, and impurities are implanted into the imaging region using one electrode and the half-buried dielectric film as a mask, and hence a n-type region constituting a photodiode is formed in a region being in contact with the p-type region in the semiconductor substrate.04-07-2011
20110241090HIGH FULL-WELL CAPACITY PIXEL WITH GRADED PHOTODETECTOR IMPLANT - Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.10-06-2011
20100038688CMOS image sensor, method of making the same, and method of suppressing dark leakage and crosstalk for CMOS image sensor - A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.02-18-2010
20090218606VERTICALLY INTEGRATED LIGHT SENSOR AND ARRAYS - Embodiments hereof include a photosensing device, comprising an isolation layer; a photodetector layer comprising a plurality of pixels, wherein the photodetector layer is in contact with a first side of the isolation layer, wherein the photodetector layer comprises a laser-processed semiconductor material; and a semiconductor layer disposed on a second side of the isolation layer.09-03-2009
20100038691IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor and a method for fabricating the same are provided. The image sensor includes a first conductive type substrate including a trench formed in a predetermined portion of the first conductive type substrate, a second conductive type impurity region for use in a photodiode, formed below a bottom surface of the trench in the first conductive type substrate, and a first conductive type epitaxial layer for use in the photodiode, buried in the trench.02-18-2010
20100065896Image sensor including a pixel cell having an epitaxial layer, system having the same, and method of forming a pixel cell - A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.03-18-2010
20100059804PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.03-11-2010
20110084322CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed is a CMOS image sensor and a manufacturing method thereof. According to an aspect of the present invention, each pixel of CMOS image sensor includes a photo detector that includes an electon Collection layer doped with a concentration of 5×1004-14-2011
20100127313PIXEL FOR PICKING UP IMAGE SIGNAL AND METHOD OF MANUFACTURING THE PIXEL - Provided is a pixel for picking up an image signal capable of suppressing an occurrence of a cross-talk. The pixel for picking up an image signal includes a substrate surrounded by a trench, a photodiode, and a pass transistor. The photodiode is formed at an upper portion of the substrate and includes a P-type diffusion area and an N-type diffusion area which are joined with each other in a longitudinal direction. The pass transistor is formed at the upper portion of the substrate and includes the one terminal that is the joined P-type diffusion area and the N-type diffusion area, the other terminal that is a floating diffusion area, and a gate terminal disposed between the two terminals. The pixel for picking up an image signal is surrounded by the trench which penetrates the substrate from the upper portion to the lower portion of the substrate, and the trench is tilled with an insulator.05-27-2010
20090026512CMOS image sensor and method for manufacturing the same - A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.01-29-2009
20090026509PHOTOSENSOR - For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.01-29-2009
20110018042UNIT PIXEL, AND CMOS IMAGE SENSOR HAVING THE SAME - A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.01-27-2011
20100264474SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device (10-21-2010
20110163362Methods of fabricating image sensors and image sensors fabricated thereby - A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.07-07-2011
20090001435Visible Light Detecting Semiconductor Radiation Detector - A semiconductor radiation detector device, comprising a bulk layer (01-01-2009
20090250733PIXEL SENSOR WITH REDUCED IMAGE LAG - A tensile-stress-generating structure is formed above a gate electrode in a CMOS image sensor to apply a normal tensile stress between a charge collection well of a photodiode, which is also a source region of a transfer transistor, and a floating drain in the direction connecting the source region and the floating drain. The tensile stress lowers the potential barrier between the source region and the body of the transfer transistor to effect a faster and more through transfer of the electrical charges in the source region to the floating drain. Image lag is thus reduced in the CMOS image sensor. Further, charge capacity of the source region is also enhanced due to the normal tensile stress applied to the source region.10-08-2009
20080315271IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - Disclosed are an image sensor and a method for fabricating the same. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a photoresist pattern as a mask; forming a metal layer on the photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the photoresist pattern, and at least a portion of the sacrificial oxide layer; and forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film.12-25-2008
20080315272IMAGE SENSOR WITH GAIN CONTROL - An image sensor having a plurality of pixels; each pixel includes one or more photosensitive elements that collect charge in response to incident light; one or more transfer mechanisms that respectively transfer the charge from the one or more photosensitive elements; a charge-to-voltage conversion region having a capacitance, and the charge-to-voltage region receives the charge from the one or more photosensitive elements; a first reset transistor connected to the charge-to-voltage conversion region; a second reset transistor connected to the first reset transistor, which in combination with the first reset transistor, selectively sets the capacitance of the charge-to-voltage conversion regions from a plurality of capacitances.12-25-2008
20080315273IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.12-25-2008
20090166696CMOS Image Device with Local Impurity Region - According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.07-02-2009
20120199894SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.08-09-2012
20090114963Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor can include a lower interconnection for connecting transistor circuitry provided on a substrate to a photodiode element provided above the transistor circuitry, a lower electrode on the lower interconnection, and the photodiode element including an intrinsic layer and a second conductive type conduction layer. A dielectric can be disposed on the substrate exposing a top surface of the lower interconnection, and. the lower electrode can be disposed on the lower interconnection within the dielectric. The intrinsic layer can be disposed on the lower electrode, and the second conductive type conduction layer can be disposed on the intrinsic layer.05-07-2009
20090090945PIXEL WITH TRANSFER GATE WITH NO ISOLATION EDGE - A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.04-09-2009
20090065823Image Sensor and Method for Manufacturing an Image Sensor - Provided is an image sensor. The image sensor can include a readout circuitry on a first substrate, an electrical junction region in the first substrate electrically connected with the readout circuitry, and an interconnection on the first substrate. The interconnection can be formed for connection to the electrical junction region. An image sensing device can be formed on the interconnection.03-12-2009
20080283883Image Sensor and Method for Manufacturing the Same - An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.11-20-2008
20090014761IMAGE SENSOR PIXEL AND FABRICATION METHOD THEREOF - Provided is an image sensor pixel in which a specific or entire area of a field oxide layer inside the pixel can be used as a photodiode so as to increase a fill factor, and a fabrication method thereof. The image sensor pixel includes: a photodiode which is buried inside a semiconductor substrate; and pixel transistors which are formed after the photodiode is formed. In addition, the image sensor pixel includes: pixel transistors; a field oxide layer which separates the pixel transistors; and a photodiode which is located at the lower portion in a specific or entire area of the field oxide layer. In addition, the fabrication method includes: (a) forming a trench region in a specific area of a semiconductor substrate; (b) forming a photodiode which includes at least a portion of the trench region; and (c) forming pixel transistor, after the photodiode is formed. Accordingly, a surface area of a photodiode increases, thereby improving a fill factor and photosensitivity. In addition, in a unit pixel of an image sensor, the entire pixel area becomes a photodiode region except for a region where transistors are formed, thereby maximizing the fill factor.01-15-2009
20090014762BACK-ILLUMINATED TYPE SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA MODULE USING THE SAME - The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section. An interconnect layer driving the field-effect transistor in the image pickup pixel section is formed on a first surface side of the semiconductor substrate. A light receiving surface of the photoelectric conversion element is located on a second surface side of the semiconductor substrate. The solid-state image pickup device includes a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.01-15-2009
20080303072CMOS Active Pixel Sensor - A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.12-11-2008
20090101952IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to the positions of the photodiodes, lower microlenses composed of an organic material formed over the seed pattern, a second insulating layer formed over the lower microlenses, a third insulating layer formed over the second insulating layer, color filters formed over the third insulating layer, and upper micro lenses formed over the color filters.04-23-2009
20090026511Isolation process and structure for CMOS imagers - A barrier implanted region of a first conductivity type formed in lieu of an isolation region of a pixel sensor cell that provides physical and electrical isolation of photosensitive elements of adjacent pixel sensor cells of a CMOS imager. The barrier implanted region comprises a first region having a first width and a second region having a second width greater than the first width, the second region being located below the first region. The first region is laterally spaced from doped regions of a second conductivity type of adjacent photodiodes of pixel sensor cells of a CMOS imager.01-29-2009
20090032854IMAGE SENSOR AND SENSOR UNIT - This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.02-05-2009
20080203451CMOS image sensor and method for fabricating the same - A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.08-28-2008
20100320517SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging apparatus comprises: a plurality of photoelectric conversion elements for converting light into an electric charge, including a first photoelectric conversion element; a first semiconductor region from which the electric charge is transferred from a first photoelectric conversion element; an amplifying MOS transistor including a gate electrode connected to the first semiconductor region to amplify the potential of the first semiconductor region; an insulating film; a metal wiring layer above the insulating film; a local interconnect of a first conductor, formed in the insulating film, for connecting the gate electrode of the amplifying MOS transistor to the first semiconductor region not through the metal wiring layer; a second semiconductor region, different from the first semiconductor region; and a second conductor for connecting the second semiconductor region to at least a part of the metal wiring layer.12-23-2010
20100320516IMAGE SENSOR HAVING FOUR-TRANSISTOR OR FIVE-TRANSISTOR PIXELS WITH RESET NOISE REDUCTION - The invention relates to image sensors produced with CMOS technology, whose individual pixels, arranged in an array of rows and columns, each consist of a photodiode associated with a charge storage region which receives the photogenerated charge before a charge readout phase. To eliminate the risk of introducing kTC-type noise into the signal, during the reset of the storage zone at the end of a readout cycle, the invention proposes that the storage zone be divided into two parts one of which, adjacent to the reset gage, is covered by a diffused region of the same type of conductivity as the substrate in which the photodiode is formed, this region being brought to the fixed potential of the substrate, and the other of which is not covered by such a region and is not adjacent to the reset gate.12-23-2010
20100320515High sensitivity image sensors and methods of operating the same - A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.)12-23-2010
20130168750PHOTODIODE ARRAY AND METHODS OF FABRICATION - Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.07-04-2013
20110101430CMOS IMAGE SENSOR - A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region.05-05-2011
20100181604STRUCTURE AND METHOD FOR FLEXIBLE SENSOR ARRAY - A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain contact layer and the semiconductor layer substantially simultaneously, wherein the patterned semiconductor layer forms part of a sensor of the sensor array.07-22-2010
20110254065PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE PICKUP SYSTEM - An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).10-20-2011
20110133260METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS - A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.06-09-2011
20110068382TWO-DIMENSIONAL TIME DELAY INTEGRATION VISIBLE CMOS IMAGE SENSOR - A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two adjacent pinned photodiodes, and a plurality of readout nodes connected to the plurality of pinned photodiodes via address lines.03-24-2011
20120146116BACK SIDE ILLUMINATION TYPE SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an imaging device includes a semiconductor substrate having a first conductivity type, a well region which is arranged on a front surface side of the semiconductor substrate and has the first conductivity type, photodiodes which are arranged in the well region and have a second conductivity type, a diffusion layer which is arranged between the photodiodes, supplies a potential to the well region, and has the first conductivity type, an overflow drain layer which is arranged on a back surface side of the semiconductor substrate and has the second conductivity type, an overflow drain electrode which extends from the front surface side of the semiconductor substrate to the overflow drain layer and supplies a bias potential to the overflow drain layer from the front surface side of the semiconductor substrate, and a wiring layer which is arranged on the front surface of the semiconductor substrate.06-14-2012
20100252871LIGHT SENSORS WITH INFRARED SUPPRESSION - Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.10-07-2010
20110260223STRESS ENGINEERING TO REDUCE DARK CURRENT OF CMOS IMAGE SENSORS - The active pixel cell structures and methods of preparing such structures described above enable reduction of dark current and white cell counts for active pixel cells. The process of preparing active pixel cell structures introduces stress on the substrate, which could lead to increased dark current and white cell counts of active pixel cells. By depositing a stress layer as part of a pre-metal dielectric layer with a stress that counters the stress induced, both the dark current and the white cell counts can be reduced. If the transistors of the active pixel cells are NMOS, the carrier mobility can also be increased by a tensile stress layer. Raman Spectroscopy can be used to measure the stress exerted on the substrate prior to the deposition of the stress layer.10-27-2011
20100038690IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a first gate insulation layer having a central opening and a second gate insulation layer formed on and/or over an uppermost surface of the first gate insulation layer including the opening. The gate electrode can be formed on and/or over the gate insulation layer. The photodiode can be formed in the semiconductor substrate at one side of the gate electrode so as to generate an optical charge. The floating diffusion region can be formed in the semiconductor at the other side of the gate electrode opposite to the photodiode. The floating diffusion region can be electrically connected to the photodiode through a channel so as to store the optical charge generated from the photodiode.02-18-2010
20100059802IMAGE SENSOR WITH RAISED PHOTOSENSITIVE ELEMENTS - An image sensor having a pixel array comprises periphery elements formed over a substrate, an oxide layer formed over the periphery elements, an epitaxial layer formed in an opening in the oxide layer in a pixel array area, and a plurality of photosensitive elements of the pixel array formed in the epitaxial layer. Formation of an initial metallization layer occurs after the formation of the photosensitive elements in the epitaxial layer. The photosensitive elements can thus be formed in the epitaxial layer at a higher level within an image sensor stack than that of the initial metallization layer. This advantageously allows stack height and pixel size to be reduced, and fill factor to be increased. The image sensor may be implemented in a digital camera or other type of digital imaging device.03-11-2010
20080217667IMAGE SENSING DEVICE - An image sensing device includes a substrate with a photo sensing and a transistor region, a photo diode, a transistor, a dielectric layer, a metal interconnect, a metal conductive line, a conformal passivation layer, a color filter, a lens planar layer, and a microlens. The photo diode is in the substrate within the photo sensing region. The transistor is on the substrate in the transistor region. The dielectric layer is on the substrate. Except the photo sensing region, the metal interconnect and the metal conductive line are respectively located in and on the dielectric layer. The conformal passivation layer is on the dielectric layer and covers the metal conductive line. The color filter is on the conformal passivation layer in the photo sensing region and the bottom thereof is lower than the bottom of the metal conductive line. The lens planar layer and the microlens are sequentially on precedent structure.09-11-2008
20110186918SHALLOW TRENCH ISOLATION STRUCTURE HAVING AIR GAP, CMOS IMAGE SENSOR USING THE SAME AND METHOD OF MANUFACTURING CMOS IMAGE SENSOR - Disclosed is a shallow trench isolation structure having an air gap for suppressing the dark currents and cross-talk which occur in CMOS image sensors. The shallow trench isolation structure suppresses photons injected from neighboring pixels and dark current, so that high-quality images are obtained. Since impurities are removed from a p type ion implantation region for a photodiode when an inner wall oxide layer is etched to form the air gap, the p type ion implantation region has a uniform doping profile, thereby suppressing the diffusion of electrons towards the surface and achieving an image having a high quality.08-04-2011
20100025746METHODS, STRUCTURES AND SYSTEMS FOR INTERCONNECT STRUCTURES IN AN IMAGER SENSOR DEVICE - Methods, structures and systems for a substantially non-light blocking conductive interconnect structure for an imager sensor device.02-04-2010
20100019296IMAGE SENSOR HAVING NANODOT - An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.01-28-2010
20110031543IMAGING DEVICE BY BURIED PHOTODIODE STRUCTURE - An n-type region as a charge storage region of a photodiode is buried in a substrate. The interface between silicon and a silicon oxide film is covered with a high concentration p-layer and a lower concentration p-layer is formed only in the portion immediately below a floating electrode for signal extraction. Electrons generated by light are stored in the charge storage region, thereby changing the potential of the portion of the p-layer at the surface of the semiconductor region. The change is transmitted through a thin insulating film to the floating electrode by capacitive coupling and read out by a buffer transistor. Initialization of charges is executed by adding a positive high voltage to the gate electrode of a first transfer transistor such that the electrons stored in the charge storage region are transferred to the n+ region and generation of reset noise is protected.02-10-2011
20090173976Light-Sensing Device for Multi-Spectral Imaging - A method of fabricating multi-spectral photo-sensors including photo-diodes incorporating stacked epitaxial superlattices monolithically integrated with CMOS devices on a common semiconductor substrate.07-09-2009
20090173975WELL FOR CMOS IMAGER AND METHOD OF FORMATION - A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.07-09-2009
20090173974TWO-BY-TWO PIXEL STRUCTURE IN AN IMAGING SYSTEM-ON-CHIP - The claimed subject matter provides systems and/or methods that facilitate mitigating an impact resulting from mismatch between signal chains in a CMOS imaging System-on-Chip (iSoC) sensor. Two-by-two pixel structures can be a basic building block upon which a pixel array is constructed. Further, each two-by-two pixel structure can be associated with a read bus that carries a sampled signal to a top end and a bottom end of a chip. Moreover, multiplexers at either end of the chip can select a subset of the read buses from which to receive a subset of the sampled signals. Accordingly, pixels in a first color plane can be read, processed, etc. on the same side of the chip (e.g., utilizing a common signal chain), while pixels in at least one second color plane can be read, processed, etc. on the other side of the chip (e.g., employing a differing signal chain).07-09-2009
20080315270MULTILAYER ANTIREFLECTION COATINGS, STRUCTURES AND DEVICES INCLUDING THE SAME AND METHODS OF MAKING THE SAME - Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and methods of forming the same are disclosed. A block copolymer is applied to a substrate and self-assembled into parallel lamellae above a substrate. The block copolymer may optionally be allowed to self-assemble into a multitude of domains oriented either substantially parallel or substantially perpendicular to an widerlying substrate12-25-2008
20120037968SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME - By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film remains on each of the plurality of photodiodes to form a lower antireflection coating and the stack film remains on a sidewall of the gate electrode layer to form a sidewall. Using the gate electrode layer and the sidewall as a mask, an impurity is introduced to form a source/drain region of the MOS transistor. After the impurity was introduced, an upper antireflection coating is formed at least on a lower antireflection coating. At least any of the upper antireflection coating and the lower antireflection coating is etched such that the antireflection coatings on the two respective photodiodes are different in thickness from each other.02-16-2012
20080277701High energy implant photodiode stack - An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, with a corresponding fabrication process. The color imager cell array is formed from a bulk silicon (Si) substrate without an overlying epitaxial Si layer. A plurality of color imager cells are formed in the bulk Si substrate, where each color imager cell includes a photodiode set and a U-shaped well liner. The photodiode set includes first, second, and third photodiode formed as a stacked multifunction structure, while the U-shaped well liner fully isolates the photodiode set from adjacent photodiode sets in the array. The U-shaped well liner includes a physically interfacing doped well liner bottom and first wall. The well liner bottom is interposed between the substrate and the photodiode set, and the first wall physically interfaces each doped layer of each photodiode in the photodiode set.11-13-2008
20120146117SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a first photodiode receiving light of a first color; a second photodiode that is arranged next to the first photodiode in a first direction and receives light of a second color; a third photodiode that is arranged next to the second photodiode in a second direction and receives light of the first color; a fourth photodiode that is arranged next to the third photodiode in the first direction and receives light of a third color; a first reset transistor for discharging a charge generated in the first photodiode and the second photodiode; and a second reset transistor for discharging a charge generated in the third photodiode and the fourth photodiode. The first photodiode and the third photodiode have a small difference in area.06-14-2012
20120037967CMOS PIXEL SENSOR CELLS WITH POLY SPACER TRANSFER GATES AND METHODS OF MANUFACTURE - CMOS pixel sensor cells with spacer transfer gates and methods of manufacture are provided herein. The method includes forming a middle gate structure on a gate dielectric. The method further includes forming insulation sidewalls on the middle gate structure. The method further includes forming spacer transfer gates on the gate dielectric on opposing sides of the middle gate, adjacent to the insulation sidewalls which isolate the middle gate structure from the spacer transfer gates. The method further includes forming a photo-diode region in electrical contact with one of the spacer transfer gates and a floating diffusion in electrical contact with another of the spacer transfer gates.02-16-2012
20100127315CMOS IMAGE SENSOR - A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode, a gate pattern of a transfer transistor contacting one side of the photodiode, a gate pattern of a drive transistor disposed to have a predetermined spacing distance from the gate pattern of the transfer transistor, and a floating diffusion node disposed between the gate pattern of the transfer transistor and the gate pattern of the drive transistor.05-27-2010
20090039400IMAGE SENSOR WITH INTER-PIXEL ISOLATION - An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. Located adjacent to the first region and between second regions of adjacent photodiodes is a barrier region. The photodiodes are reversed biased to create depletion regions within the first regions. The barrier region limits the lateral growth of the depletions regions and inhibits depletion merger between adjacent photodiodes.02-12-2009
20080290383CMOS IMAGING DEVICE COMPRISING A MICROLENS ARRAY EXHIBITING A HIGH FILLING RATE - A CMOS imager includes a photosite array and a microlens array. The microlens array comprises microlenses of a first type and microlenses of a second type, the microlenses of first type being manufactured according to a first circular template having a first radius, the microlenses of second type being manufactured according to a second circular template having a second radius inferior to the first radius, and the first and second templates having overlap areas. One advantage is that the CMOS imager has a high fill rate.11-27-2008
20090146197PHOTO-DETECTOR ARRAY DEVICE WITH ROIC MONOLITHICALLY INTEGRATED FOR LASER-RADAR IMAGE SIGNAL AND MANUFACTURING METHOD THEREOF - A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.06-11-2009
20120205731SINGLE PHOTON AVALANCHE DIODES - A CMOS single photon avalanche diode (SPAD) design uses conventional, or at least known, CMOS processes to produce a device having a breakdown region in which the main p-n junction is formed of a deep n-well layer, and optionally on the other side, a p-add layer. The SPAD may also have a guard ring region which comprises the p-epi layer without any implant. The SPAD may have curved or circular perimeters. A CMOS chip comprises SPADs as described and other NMOS devices all sharing the same deep n-well.08-16-2012
20120001241CMOS Image Sensor Including PNP Triple Layer And Method Of Fabricating The CMOS Image Sensor - A CMOS image sensor (CIS) for sensing visible light and infrared (IR) light, capable of effectively preventing increase in electrical crosstalk that is caused when photodiodes are formed deeply and the thickness of an epitaxial layer is increased due to deep permeation of IR light, and a method of fabricating the CIS. The CIS includes a substrate; the PNP triple layer including a P-type lower layer, an N-type intermediate layer, and a P-type upper layer that are sequentially stacked on the substrate; a plurality of photodiodes formed in the P-type upper layer and isolated from each other by isolation regions; a wiring layer formed on the P-type upper layer and the plurality of photodiodes and including a plurality of wirings; and a plurality of lenses for focusing light to transfer the light to the photodiodes.01-05-2012
20110156113BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME - A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.06-30-2011
20110156112IMAGE SENSOR WITH DOPED TRANSFER GATE - An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.06-30-2011
20110156111Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device - A back-illuminated type solid-state image pickup device (06-30-2011
20120056252ELECTRONIC DEVICE - An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.03-08-2012
20120056251SEMICONDUCTOR INTEGRATED CIRCUIT, ELECTRONIC DEVICE, SOLID-STATE IMAGING APPARATUS, AND IMAGING APPARATUS - A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.03-08-2012
20120007157IMAGE SENSOR WITH COMPACT PIXEL LAYOUT - Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.01-12-2012
20120007156METHOD AND STRUCTURE TO REDUCE DARK CURRENT IN IMAGE SENSORS - A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.01-12-2012
20120205730TRANSPARENT CONDUCTIVE FILM FOR IMPROVING CHARGE TRANSFER IN BACKSIDE ILLUMINATED IMAGE SENSOR - The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.08-16-2012
20090001434Vertical Pin or Nip Photodiode and Method for the Production which is Compatible with a Conventional Cmos-Process - The invention relates to a fast photodiode and to a method for the production thereof in CMOS technology. The integrated PIN photodiode, which is formed or can be formed by CMOS technology, consists of an anode corresponding to a highly doped p-type substrate with a specific electric resistance of less than 50 mOhm*cm, a lightly p-doped l-region which is adjacent to the anode, and an n-type cathode which corresponds to the doping in the n-well region. The lightly doped l-region has a doping concentration of less than 1001-01-2009
20080237669PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE - An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage V10-02-2008
20120112254SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a photoelectric conversion unit that is formed on a semiconductor substrate, a reading unit that reads signal charges of the photoelectric conversion unit, a gate insulating film and an electrode disposed thereon that constitute the reading unit, a light shielding film that covers the electrode, and an antireflection film that is formed on the photoelectric conversion unit and is constituted by films of four or more layers. The film of the lower layer of the antireflection film is also used as a stopper film during patterning, and a gap between the end of the light shielding film and the semiconductor substrate which is defined by interposing a plurality of films of the lower layer of the antireflection film is set so as to be smaller than the thickness of the gate insulating film.05-10-2012
20110049591SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.03-03-2011
20110049590SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device that includes at least one pixel. The pixel includes a photodiode, a floating diffusion element in a region of the photodiode and a read out gate electrode at least partially surrounding the floating diffusion element in plan view.03-03-2011
20110049589BACKSIDE ILLUMINATED IMAGE SENSOR HAVING CAPACITOR ON PIXEL REGION - A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.03-03-2011
20100096675BACKSIDE ILLUMINATED CMOS IMAGE SENSOR WITH PHOTO GATE PIXEL - A pixel for a CMOS photo sensor with increased full well capacity is disclosed. The pixel having a photosensitive element, a photo gate, potential well and a readout circuit. The photosensitive element having a front side and a back side, for releasing charge when light strikes the back side of the photosensitive element. The potential well receives the released charge from the photosensitive element. The photo gate located on the front side of the photosensitive element, for transferring the released charge from the potential well to a sense node. The readout circuit coupled to the sense node, for measuring a voltage corresponding to the released charge transferred to the sense node.04-22-2010
20100096676PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C04-22-2010
20110068381IMAGE SENSOR PIXEL CIRCUIT - A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.03-24-2011
20090134438Image Sensor - A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.05-28-2009
20090134437IMAGE SENSOR AND CMOS IMAGE SENSOR - In an image sensor, a first electrode, a second electrode, a third electrode and a fourth electrode are formed between a photoelectric conversion portion and a voltage conversion portion and are provided so as not to overlap with at least a part of the photoelectric conversion portion in plan view.05-28-2009
20120119272SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND IMAGING SYSTEM - A solid-state image sensor includes a pixel region and peripheral circuit region arranged on a semiconductor substrate. The pixel region includes pixels. Each pixel includes a photoelectric conversion element and an amplification MOS transistor that outputs a signal corresponding to charges of the photoelectric conversion element to a column signal line. The peripheral circuit region includes a circuit that drives the pixel or processes the signal output to the column signal line. A resistance of a source region of the amplification MOS transistor is lower than a resistance of a drain region of the amplification MOS transistor.05-17-2012
20120119271SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device includes an imaging region including unit pixels which are two-dimensionally arranged on a semiconductor layer and each of which includes a photoelectric conversion unit and a signal scanning circuit unit. The unit pixel includes a transfer gate provided on the semiconductor layer, a photogate provided on the semiconductor layer, a first semiconductor layer of a first conductivity type, which is provided in the semiconductor layer below the photogate, and a second semiconductor layer of the first conductivity type, which is adjacent to the first semiconductor layer and provided in the semiconductor layer between the transfer gate and the photogate.05-17-2012
20120161214CMOS IMAGE SENSOR WITH SHARED SENSING MODE - A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.06-28-2012
20120161213MATRIX IMAGING DEVICE HAVING PHOTOSITES WITH GLOBAL SHUTTER CHARGE TRANSFER - An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.06-28-2012
20090057735Image sensor having reduced dark current - An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.03-05-2009
20090057734IMAGE SENSOR - An image sensor includes a photoelectric conversion portion generating signal charges, a first electrode for forming an electric field transferring the signal charges generated by the photoelectric conversion portion, formed to be adjacent to the photoelectric conversion portion; and a second electrode for forming an electric field transferring the signal charges, provided on a side opposite to the photoelectric conversion portion with respect to the first electrode and formed to partially extend on the first electrode.03-05-2009
20090057732CMOS IMAGE SENSOR AND FABRICATING METHOD THEREOF - A CMOS image sensor and a fabricating method for a semiconductor device are disclosed. Embodiments provide a CMOS image sensor having an improved structure using a light reflection system, with a fabricating method thereof to simplify the fabrication process and maximize a light receiving area. Embodiments may be applied to a semiconductor device having a lamination structure.03-05-2009
20120248514SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device has a unit pixel containing a photoelectric conversion element for detecting a light to generate photoelectrons and pixel drive circuits for driving the unit pixel. The photoelectric conversion element has a photogate structure, and the pixel drive circuits apply a voltage selected from three voltages to the photogate of the photoelectric conversion element to generate or transfer the photoelectrons. The three voltages include at least a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the first voltage and lower than the second voltage.10-04-2012
20120248515STRESS ENGINEERING TO REDUCE DARK CURRENT OF CMOS IMAGE SENSORS - This disclosure relates to an active pixel cell including a shallow trench isolation (STI) structure. The active pixel cell further includes a photodiode neighboring the STI structure, where a first stress resulted from substrate processing prior to deposition of a pre-metal dielectric layer increases dark current and white cell counts of a photodiode of the active pixel cell. The active pixel cell further includes a transistor, where the transistor controls the operation of the active pixel cell. The active pixel cell further includes a stress layer over the photodiode, the STI structure, and the transistor, and the stress layer has a second stress that counters the first stress exerted on the substrate, and the second stress reduces the dark current and the white cell counts caused by the first stress.10-04-2012
20090114965IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the same that includes providing a semiconductor substrate having a photodiode, forming a color filter over the photodiode, forming a micro lens over the color filter and then forming at least one metal layer vertically extending through the microlens at an outer edge thereof.05-07-2009
20080210996Frame shutter pixel with an isolated storage node - A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion.09-04-2008
20120175691HOLE-BASED ULTRA-DEEP PHOTODIODE IN A CMOS IMAGE SENSOR AND A PROCESS THEREOF - A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.07-12-2012
20090085078IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a pixel array including a photodiode, a peripheral region including a logic circuit, and an isolation region formed between the pixel array and the peripheral region and formed under the peripheral region to electrically isolate the pixel array from the peripheral region.04-02-2009
20120217558IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a substrate which is formed of a semiconductor and includes a first surface and a second surface which face opposite sides; a gate insulation film which is formed on a trench formed in the substrate to penetrate the first surface and the second surface; and a gate electrode which is embedded in the trench through the gate insulation film to be exposed to a second surface side of the substrate. A step difference is formed from the second surface of the substrate to a tip end surface of the gate electrode on the second surface side.08-30-2012
20100006910IMAGE SENSOR - An image sensor includes a photoelectric conversion portion generating signal charges, a voltage conversion portion for converting the signal charges to a voltage, a charge increasing portion for increasing the number of the signal charges stored in the photoelectric conversion portion, a first light shielding film formed to cover at least one part of the charge increasing portion and a second light shielding film provided separately from the first light shielding film and formed to cover the voltage conversion portion.01-14-2010
20100244108CMOS IMAGE SENSOR ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a CMOS image sensor result in: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including: at least first, second, and third semiconductor islands, each island operating as a color sensitive photo-detector and each being of a different thickness such that each is sensitive to a respective range of light wavelengths, and a fourth semiconductor island on which at least one transistor is disposed, the at least one transistor operating to at least one of buffer, select, and reset one or more of the photo-detectors.09-30-2010
20090315086IMAGE SENSOR AND CMOS IMAGE SENSOR - An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.12-24-2009
20120187464ELECTROMAGNETIC WAVE DETECTING ELEMENT - The present invention is to provide an electromagnetic wave detecting element that can prevent a decrease in light utilization efficiency at sensor portions. The sensor portions are provided so as to correspond to respective intersection portions of scan lines and signal lines, and have semiconductor layer that generate charges due to electromagnetic waves being irradiated, and at whose electromagnetic wave irradiation surface sides upper electrodes are formed, and at whose electromagnetic wave non-irradiation surface sides lower electrodes are formed. Bias voltage is supplied to the respective upper electrodes via respective contact holes by a common electrode line that is formed further toward an electromagnetic wave downstream side than the semiconductor layer.07-26-2012
20120187463CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR - An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.07-26-2012
20120187462HIGH OPTICAL EFFICIENCY CMOS IMAGE SENSOR - High optical efficiency CMOS image sensors capable of sustaining pixel sizes less than 1.2 microns are provided. Due to high photodiode fill factors and efficient optical isolation, microlenses are unnecessary. Each sensor includes plural imaging pixels having a photodiode structure on a semiconductor substrate adjacent a light-incident upper surface of the image sensor. An optical isolation grid surrounds each photodiode structure and defines the pixel boundary. The optical isolation grid extends to a depth of at least the thickness of the photodiode structure and prevents incident light from penetrating through the incident pixel to an adjacent pixel. A positive diffusion plug vertically extends through a portion of the photodiode structure. A negative diffusion plug vertically extends into the semiconductor substrate for transferring charge generated in the photodiode to a charge collecting region within the semiconductor substrate. Pixel circuitry positioned beneath the photodiode controls charge transfer to image readout circuitry.07-26-2012
20120261731IMAGE SENSOR - An image sensor is disclosed. The image sensor includes a substrate, at least a color filter, and a microlens disposed on the color filter. The substrate includes a passivation layer thereon, and the color filter is disposed on the passivation layer, in which the color filter is truncated.10-18-2012
20110121371SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.05-26-2011
20080296643SOLID STATE IMAGE SENSING DEVICE - A solid state image sensing device in which many pixels are disposed in a matrix on a two-dimensional plane comprises a plurality of light receiving devices disposed in such a way that a center interval may periodically change in a column direction and/or a row direction, and a plurality of micro-lenses, for collecting an incident light of each light receiving device, wherein a center interval periodically changes in accordance with the periodic change of the center interval of the light receiving device.12-04-2008
20080296641Multi-well CMOS image sensor and methods of fabricating the same - Provided is a multi-well CMOS image sensor and a method of fabricating the same. The multi-well CMOS image sensor may include a plurality of photodiodes vertically formed in a region of a substrate, an n+ wall that vertically connects an outer circumference of the photodiodes, and a floating diffusion region that is connected to the photodiodes on a side of the n+ wall to receive charges from the photodiodes, wherein a p-type region is formed between the floating diffusion region and the n+ wall, and the plurality of photodiodes have a multi-potential well structure.12-04-2008
20100327332SOLID STATE IMAGING DEVICE - A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate 12-30-2010
20120261732METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR - A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.10-18-2012
20110037107Silicon Photon Detector - A silicon photon detector device and methodology are provided for detecting incident photons in a partially depleted floating body SOI field-effect transistor (02-17-2011
20120299071SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes a photodiode includes an N-type region and a P-type region, a floating diffusion region, and a transfer transistor. The N-type diffusion region of the photodiode comprises a first semiconductor region and a second semiconductor region formed shallower than the first semiconductor region. An end portion of the first semiconductor region is positioned on the floating diffusion region side rather than an end portion of a gate electrode of the transfer transistor. An end portion of the second semiconductor region is set in substantially the same position as that of the end portion of the gate electrode of the transfer transistor.11-29-2012
20120267695SOLID STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel array unit arrayed unit pixels in a matrix pattern, each of the unit pixels including a photoelectric conversion element and a floating diffusion region, signal lines provided for respective pixel columns and configured to read signals from the unit pixels, capacitive interconnections provided for the respective pixel columns and capacitively coupled to the floating diffusion regions, first switch elements configured to switch a connection state between the signal lines and the capacitive interconnections, and second switch elements configured to switch a connection state between the capacitive interconnections and a power supply line.10-25-2012
20120080733PHOTODETECTOR ISOLATION IN IMAGE SENSORS - Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.04-05-2012
20120080732ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES - Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.04-05-2012
20120080731PHOTODETECTOR ISOLATION IN IMAGE SENSORS - A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.04-05-2012
20100140675CMOS IMAGE SENSOR WITH IMPROVED BACKSIDE SURFACE TREATMENT - An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.06-10-2010
20130020620OPTICAL WAVEGUIDES IN IMAGE SENSORS - An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.01-24-2013
20120091515Semiconductor Devices Having Backside Illuminated Image Sensors - A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.04-19-2012
20130009224SOLID-STATE IMAGING DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE - In a manufacturing method for a solid-state imaging device, a photoelectric conversion portion including a first impurity layer whose carrier polarity is a first conductivity type is formed within a substrate, a second impurity layer, whose carrier polarity is a second conductivity type opposite to the first conductivity type, is formed on a surface of the first impurity layer so as to be in contact with the surface located on one surface side of the substrate, a third impurity layer, whose carrier polarity is the first conductivity type, is formed on the second impurity layer so as to be in contact therewith, a gate electrode is formed above the third impurity layer so as to cover the third impurity layer, and an impurity region portion, whose carrier polarity is the first conductivity type, is formed within the substrate so as to be connected to the third impurity layer.01-10-2013
20130015513SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICEAANM Kido; HideoAACI KanagawaAACO JPAAGP Kido; Hideo Kanagawa JPAANM Enomoto; TakayukiAACI KanagawaAACO JPAAGP Enomoto; Takayuki Kanagawa JPAANM Togashi; HideakiAACI KanagawaAACO JPAAGP Togashi; Hideaki Kanagawa JP - A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.01-17-2013
20130020621SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode 01-24-2013
20080251822AMPLIFICATION-TYPE SOLID-STATE IMAGE SENSING DEVICE - According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.10-16-2008
20080277700Imaging Device by Buried Photodiode Structure - To achieve an image sensor with low noise, small dark current and the high sensitivity, an n-type region serving as a charge storage region (11-13-2008
20130140613SOI-BASED CMOS IMAGERS EMPLOYING FLASH GATE/CHEMISORPTION PROCESSING - A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide later is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.06-06-2013
20080224191Image pickup device with prevention of leakage current - An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.09-18-2008
20080224190IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.09-18-2008
20080224189IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.09-18-2008
20080224188IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor.09-18-2008
20080224187Image Sensor Pixel and Method of Fabricating the Same - A new structure of a photodiode of a pixel in CMOS image sensor and a method of fabricating the same are provided. The photodiode is fabricated by using one photo mask, so that the number of masks decreases and the fabrication processes are simplified. In addition, two conducting layers constituting a photodiode are self-aligned, so that a fabrication process for connecting the photodiode and a transfer transistor is not required. Accordingly, a problem of channeling generated in a lower portion of a gate of the transfer transistor can be solved, so that an improved pixel can be fabricated.09-18-2008
20080224186High Dynamic Range Imaging Cell With Electronic Shutter Extensions - A pixel sensor cell of improved dynamic range comprises a coupling transistor that couples a capacitor device to a photosensing region (e.g., photodiode) of the pixel cell, the photodiode being coupled to a transfer gate and one terminal of the coupling transistor. In operation, the additional capacitance is coupled to the pixel cell photodiode when the voltage on the photodiode is drawn down to the substrate potential. Thus, the added capacitance is only connected to the imager cell when the cell is nearing its charge capacity. Otherwise, the cell has a low capacitance and low leakage. In an additional embodiment, a terminal of the capacitor is coupled to a “pulsed” supply voltage signal that enables substantially full depletion of stored charge from the capacitor to the photosensing region during a read out operation of the pixel sensor cell. In various embodiments, the locations of the added capacitance and photodiode may be interchanged with respect to the coupling transistor. In addition, the added capacitor of the pixel sensor cell allows for a global shutter operation.09-18-2008
20120248516MULTILINEAR IMAGE SENSOR WITH CHARGE INTEGRATION - The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.10-04-2012
20130126952SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a semiconductor substrate; and a plurality of pixels arrayed two-dimensionally in the semiconductor substrate, each of the pixels having a photoelectric conversion element that performs photoelectric conversion, the photoelectric conversion element having a first impurity region, formed in the semiconductor substrate, containing an impurity of a first conductivity type; a second impurity region formed in the semiconductor substrate so as to be in contact with the first impurity region, containing an impurity of a second conductivity type different from the first conductivity type; and a PN junction portion in which the first impurity region and the second impurity region are in contact with each other, formed in a protruding shape projecting toward a surface side of the semiconductor substrate.05-23-2013
20110272751SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode 11-10-2011
20080203452CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR - An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.08-28-2008
20080197389Image sensor with improved charge transfer efficiency and method for fabricating the same - An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.08-21-2008
20080197388Pixel structure of CMOS image sensor and method of forming the pixel structure - Provided is a pixel structure of a CMOS image sensor. The pixel structure may include a semiconductor substrate, a photo diode, and a color filter. The photo diode may have a trench structure formed in the semiconductor substrate. The color filter may be formed in the trench structure. The color filter may be formed by filling a material in the trench structure using a gap-fill process. The material in the trench structure may transmit light having a wavelength within a predetermined or given range. Because the color filter of the pixel structure of the CMOS image sensor may be formed in the photo diode having the afore-mentioned trench structure, the height of the pixel may be decreased, and the efficiency of the output signal and the color sensitivity may be increased.08-21-2008
20080197387Solid-State imaging device and camera - A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.08-21-2008
20090302359Anti-blooming protection of pixels in a pixel array for multiple scaling modes - Circuits and methods of generating control signals for transistors in a pixel row of a pixel array are disclosed. The circuits include a transfer transistor control signal row driver that includes a plurality of output branches and a reset transistor control signal row driver that includes a plurality of output branches. The row drivers output positive boosted control signals to selected pixel rows during a photosensor-to-floating diffusion region charge transfer phase and during a floating diffusion region reset phase and to unselected pixel rows during an initial part of an integration phase. The row drivers output positive non-boosted control signals to unselected non-integrating pixel rows.12-10-2009
20090166692CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS image sensor may include a dielectric layer formed on a semiconductor substrate, first and second passivation layers sequentially formed on the whole surface of the dielectric layer, a planarization layer, a color filter layer, and an overcoating layer and a microlens sequentially formed on the second passivation layer. The CMOS image sensor may further include a plurality of metal pads arranged on the dielectric layer to surround the microlens, a water barrier formed on the dielectric layer between the microlens and the metal pads, and first and second open parts exposing the metal pads and the water barrier.07-02-2009
20100308387Solid state imaging device - A solid state imaging device having a light receiving region on a first surface side of a semiconductor substrate, incident light from an object to be imaged being illuminated on a second surface side of the semiconductor substrate, the solid state imaging device including an impurity diffusion layer formed on the first surface side of the semiconductor substrate, a surface of the impurity diffusion layer being silicided, and a gate electrode formed on the first surface side of the semiconductor substrate. The impurity diffusion layer includes the light receiving region disposed on the first surface side of the semiconductor substrate, a surface of the light receiving region being silicided, and the impurity diffusion layer includes at least a surface adjacent to the gate electrode.12-09-2010
20100308386SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.12-09-2010
20100308385SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE PICKUP ELEMENT - Disclosed herein is a semiconductor device having a vertical MOS transistor having a channel of a first conductivity type and formed by burying a gate electrode in a semiconductor substrate, a planar MOS transistor having a channel of the first conductivity and having a gate electrode formed on the semiconductor substrate, and a planar MOS transistor having a channel of a second conductivity and having a gate electrode formed on the semiconductor substrate, the semiconductor device, including other circuit element(s), other than a transistor, formed either below or above the vertical MOS transistor having the channel of the first conductivity type.12-09-2010
20100308384METAL OXIDE SEMICONDUCTOR (MOS) SOLID STATE IMAGING DEVICE THAT INCLUDES A SURFACE LAYER FORMED BY IMPLANTING A HIGH CONCENTRATION OF IMPURITY DURING CREATION OF A PHOTODIODE, AND MANUFACTURING METHOD THEREOF - A photodiode has a carrier accumulation layer of a second conductivity type and a surface area of a first conductivity type deposited in order from an inside towards a surface of a first conductivity type well region. A transfer transistor is formed so that a transfer gate electrode of the transfer transistor partially overlaps the surface layer of the photodiode and is formed above a surface of the first conductivity type well region with a gate insulating film therebetween. The surface layer includes a first surface layer, which partially overlaps the transfer gate electrode in the direction of the x-axis, and a second surface layer adjacent to the first surface layer. A concentration of the impurity of the first conductivity type is higher in the second surface layer than in the first surface layer.12-09-2010
20120273855UNIT PIXEL, AND CMOS IMAGE SENSOR HAVING THE SAME - A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.11-01-2012
20130187210PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.07-25-2013
20100314672SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SOLID-STATE IMAGE SENSING DEVICE - Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.12-16-2010
20120001242SINGLE POLY CMOS IMAGER - More complete charge transfer is achieved in a CMOS or CCD imager by reducing the spacing in the gaps between gates in each pixel cell, and/or by providing a lightly doped region between adjacent gates in each pixel cell, and particularly at least between the charge collecting gate and the gate downstream to the charge collecting gate. To reduce the gaps between gates, an insulator cap with spacers on its sidewalls is formed for each gate over a conductive layer. The gates are then etched from the conductive layer using the insulator caps and spacers as hard masks, enabling the gates to be formed significantly closer together than previously possible, which, in turn increases charge transfer efficiency. By providing a lightly doped region on between adjacent gates, a more complete charge transfer is effected from the charge collecting gate.01-05-2012
20120018787SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a pixel array having a plurality of photodiodes that are disposed in a matrix, electric charge transfer gates, and a floating diffusion (FD), and further includes a reset transistor and an amplifier transistor each shared by the four adjacent photodiodes. In the solid-state image pickup device, the photodiodes include first to fourth photodiodes. In a state where the amplifier transistor is activated, electric charge transfer gates connected respectively to the first to fourth photodiodes are sequentially turned ON and electric charges accumulated in the photodiodes are sequentially read out through the FD. Accordingly, a readout blanking period can be minimized to and signal charges can be read out at high speed. Moreover, readout signal lines need only to be provided for every two columns of the photodiodes, so that openings of the photodiodes can be increased in size.01-26-2012
20130193497PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes: a first semiconductor region forming a part of a photoelectric conversion element; a second semiconductor region stacked on the first semiconductor region, and forming a part of the photoelectric conversion element; a third semiconductor region to which a signal charge transferred from the photoelectric conversion element; a fourth semiconductor region of the first conductivity type having an higher impurity concentration, between the first and third semiconductor region and between the second and third semiconductor regions, closer to a main surface than the first semiconductor region, and connected to the first semiconductor region; a first gate electrode over the fourth semiconductor region, an insulating film on the main surface and between the first gate electrode and the fourth semiconductor region; and a second gate electrode between the third and fourth semiconductor regions, and over the insulating film.08-01-2013
20130193495LIGHT RECEIVING CIRCUIT - According to an embodiment, a light-receiving circuit includes a MOSFET, a first light-receiving element and a second light-receiving element. The first light-receiving element controls a state of the MOSFET between ON state and OFF state by applying a voltage induced by a light signal between a gate of the MOSFET and a source of the MOSFET; and a second light-receiving element controls a threshold voltage of the MOSFET.08-01-2013
20130193496IMAGE SENSORS - In image sensors and methods of manufacturing the same, a substrate has a photoelectric conversion area, a floating diffusion area and a recess between the photoelectric conversion area and the floating diffusion area. A plurality of photodiodes is vertically arranged inside the substrate in the photoelectric conversion area. A transfer transistor is arranged along a surface profile of the substrate having the recess and configured to transfer electric charges generated from the plurality of photodiodes to the floating diffusion area. The transfer transistor includes a gate insulation pattern on a sidewall and a bottom of the recess and on a surface of the substrate around the recess, and a gate conductive pattern including polysilicon doped with impurities and positioned on the gate insulation pattern along the surface profile of the substrate having the recess, wherein a cavity is in an upper surface of the gate conductive pattern.08-01-2013
20130207169ACTIVE MATRIX IMAGE SENSING PANEL AND APPARATUS - An active matrix image sensing panel includes a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and includes a data line, a first thin film transistor (TFT) device and a second TFT device. The first TFT device includes a first electrode, a second electrode and a first gate electrode. The second electrode is coupled to the data line through a first via. The second TFT device includes a third electrode, a fourth electrode and a second gate electrode. The fourth electrode is electrically connected to the data line through a second via. The second electrode and the fourth electrode are connected with each other and overlap the data line.08-15-2013

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