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Imaging array

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257213000 - FIELD EFFECT DEVICE

257288000 - Having insulated electrode (e.g., MOSFET, MOS diode)

257290000 - Light responsive or combined with light responsive device

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
257292000 Photodiodes accessed by FETs 396
257294000 With shield, filter, or lens 34
257293000 Photoresistors accessed by FETs, or photodetectors separate from FET chip 1
20100102368SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME - A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.04-29-2010
Entries
DocumentTitleDate
20120199893SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.08-09-2012
20090194798BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER - A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A redistribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate.08-06-2009
20120168836MULTILAYERED PHOTODIODE AND METHOD OF MANUFACTURING THE SAME - In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.07-05-2012
20110193146Charge Carrier Barrier for Image Sensor - A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vicinity of the dark current correction pixel cell and the buffer pixel cell resembles an active pixel cell. Thus, an environment surrounding the dark current correction pixel cell is similar to the environment surrounding an active pixel cell.08-11-2011
20090267120IMAGE DETECTION APPARATUS AND METHODS - MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.10-29-2009
20130087838PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T04-11-2013
20090045441CMOS image sensor package - A CMOS image sensor package is disclosed. The CMOS image sensor package includes: a substrate, on which a pre-designed circuit pattern is formed, and in which a cavity is formed; a pixel array sensor, which is electrically connected with the circuit pattern and stacked on one side of the substrate; and a control chip, which is electrically connected with the circuit pattern and held within the cavity. According to certain aspects of the invention, the CMOS image sensor chip can be separated into the pixel array sensor and the control chip, with the control chip and passive components embedded in cavities formed in the substrate, so that the size of the chip mounted on the substrate may be reduced, and consequently the overall size of the CMOS image sensor package may be reduced.02-19-2009
20120112253SEMICONDUCTOR IMAGE PICKUP DEVICE - According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric conversion element formed in the pixel area, a first transistor formed in the pixel area and connected to the first photoelectric conversion element, a second photoelectric conversion element formed in the non-pixel area, a second transistor formed in the non-pixel area and connected to the second photoelectric conversion element, a metal wire formed at least in the non-pixel area, a first cap layer formed on the metal wire to prevent diffusion of metal contained in the metal wire, and a dummy via wire formed in the non-pixel area and penetrating the first cap layer.05-10-2012
20090065818STRUCTURE FOR IMAGERS HAVING ELECTRICALLY ACTIVE OPTICAL ELEMENTS - A design structure embodied in a machine readable medium for use in a design process, the design structure representing a CMOS image sensor device comprising an array of active pixel cells. Each active pixel cell includes a substrate; a photosensing device formed at or below a substrate surface for collecting charge carriers in response to incident light; and, one or more light transmissive conductive wire structures formed above the photosensing device, the one or more conductive wire structures being located in an optical path above the photosensing device. The formed light transmissive conductive wire structures provide both an electrical and optical functions. An optical function is provided by tailoring the thickness of the conductive wire layer to filter light according to a pixel color scheme. Alternately, the light transmissive conductive wire structures may be formed as a microlens structure providing a light focusing function. Electrical functions for the conductive wire layer include use as a capacitor plate, as a resistor or as an interconnect.03-12-2009
20130062673SOLID-STATE IMAGING DEVICE - In a solid-state imaging device, a pixel has a first island-shaped semiconductor (P03-14-2013
20110278652SOLID STATE IMAGING DEVICE - A plurality of pixels PX include effective pixels and optical black pixels. Signal lines VL are provided corresponding to each column of the pixels PX and supplied with output signals of the pixels PX of the corresponding column. Clip transistors CL are provided corresponding to the respective signal lines VL and limit a potential of the corresponding vertical signal lines VL based on a gate potential. At least in a predetermined operating mode, a potential Vclip_dark is supplied to a gate of one of the clip transistors CL corresponding to at least one pixel column formed of the optical black pixels when reading a noise level from the pixels PX corresponding to the clip transistors CL and when reading a data level from the pixels PX corresponding to the clip transistors CL.11-17-2011
20080296640SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MAKING SAME, AND IMAGE PICKUP APPARATUS - Disclosed herein is a solid-state image pickup device which includes: a light-receiving unit for photoelectric conversion of incident light; and a charge transfer unit of an n-channel insulating gate type configured to transfer a signal charge photoelectrically converted in the light-receiving unit; wherein the charge transfer unit has an insulating film formed on a transfer electrode and having a negative fixed charge.12-04-2008
20110298022MANUFACTURING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE, SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS - A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the charge accumulation region, and a gate electrode disposed on a surface of the substrate which is closer to the first impurity region. Further, a portion of the first impurity region and the charge accumulation region extend underneath a portion of the gate electrode, and edges of the charge accumulation region and first impurity region which lie underneath the gate electrode are in registry with each other.12-08-2011
20110291165DETECTOR MODULE - A detector module, in particular for super-resolution satellites, contains a multi-chip carrier. At least one TDI-CCD detector and at least one CMOS chip are arranged on the multi-chip carrier, and are electrically connected to one another. The CMOS chip contains at least the digital output electronics for the TDI-CCD detector.12-01-2011
20090179238Image pickup element performing image detection of high resolution and high image quality and image pickup apparatus including the same - In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.07-16-2009
20100102367IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A method of fabricating an image sensor. A method of fabricating an image sensor may include preparing a substrate including a pixel region and/or a logic region having transistors and/or gates. A method of fabricating an image sensor may include forming a first interlayer dielectric film on and/or over a substrate to cover gates. A method of fabricating an image sensor may include forming a first dielectric film to expose an upper surface of at least one gate over a pixel region. A method of fabricating an image sensor may include forming a second interlayer dielectric film over a first interlayer dielectric film and/or dielectric film. A method of fabricating an image sensor may include forming a plurality of contact holes, which may be simultaneously formed over a second interlayer dielectric film. An image sensor may include contacts formed over a second interlayer dielectric film. An image sensor is disclosed.04-29-2010
20100102366Integrated Infrared and Color CMOS Imager Sensor - An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR pixel. Each visible light pixel includes a moderately p doped bowl with a bottom p doped layer and p doped sidewalls. An n doped layer is enclosed by the p doped bowl, and a moderately p doped surface region overlies the n doped layer. A transfer transistor has a gate electrode overlying the p doped sidewalls, a source formed from the n doped layer, and an n+ doped drain connected to a floating diffusion region. The IR pixel is the same, except that there is no bottom p doped layer. An optical wavelength filter overlies the visible light and IR pixels.04-29-2010
20090014759SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME - A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.01-15-2009
20090121264CMOS IMAGE SENSOR AND METHOD OF FORMING THE SAME - A CMOS image sensor is formed utilizing a through-poly implantation process. First, a substrate including a photo-sensing region and a transistor region is provided. Subsequently, at least a gate structure is formed on a surface of the substrate within the transistor region. Thereafter, an ion implantation process is performed on the substrate to form a first conductive type well in the substrate through the gate structure. Since the ion implantation process implants ions into the substrate to a channel region of the transistor through the gate structure, the implant depth of the uncovered parts of the substrate is deeper than the implant depth of the parts of the substrate covered by the gate structure, and defects caused by the energy of the ion implantation process are prevented within the channel region.05-14-2009
20090146196IMAGE SENSOR - An image sensor, in particular a CMOS image sensor, for electronic cameras having a plurality of light-sensitive pixels which are arranged in rows and columns and whose signals are conducted via a plurality of column lines to column amplifiers, with a column amplifier being associated with each column line. At least one further column amplifier which is simultaneously also associated with at least one other column line is associated with the respective column line. A switching device switches the respective column line selectively to one of the associated column amplifiers.06-11-2009
20100123174LIGHTLY-DOPED DRAINS (LDD) OF IMAGE SENSOR TRANSISTORS USING SELECTIVE EPITAXY - Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.05-20-2010
20080296639Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device - A plural line CMOS sensor array device is provided with sensor cells arranged in a matrix of coordinate-wise rows and columns. Each cell comprises a photosensitive area, an output node, and a transfer gate for selectively interconnecting the photosensitive area and the output node. Along at least a first coordinate direction adjacent cells are functionally configured as mutually mirror-symmetric structures in that their proximate output nodes are facing each other and are arranged for separately feeding a respective output channel.12-04-2008
20090090943SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF THE SAME - A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first is region, under an end of the gate electrode in a gate width direction.04-09-2009
20090261394Method and System for Creating Photosensitive Array with Integrated Backplane - A method of fabricating a photoactive array having an integrated backplane is provided. The layers of the device may be stamped or deposited on a planar or a curved substrate, such as a semispherical or ellipsoidal substrate. Each metal layer may be stamped using an elastomeric stamp and a vacuum mold. By depositing the patterned and full-surface layers in a single process, a photosensitive array with an integrated transistor backplane may be fabricated, resulting in improved sensitivity and performance.10-22-2009
20090261393COMPOSITE TRANSFER GATE AND FABRICATION THEREOF - A composite transfer gate is described, which is disposed over a semiconductor substrate between an electron reservoir and a floating node in the semiconductor substrate. The composite transfer gate includes at least one N-type portion and a P-type portion that are arranged laterally.10-22-2009
20080251820CMOS image sensor and fabricating method thereof - A fabricating method of a CMOS image sensor includes the steps of: forming a transfer gate on a semiconductor substrate where a device isolation layer is formed; forming a first n- type ion implantation region for a photodiode beneath a surface of the semiconductor substrate, the first n-type ion implantation region being aligned at one side of the transfer gate and having a first width and a first ion implantation depth; forming a second n-type ion implantation region aligned at one side of the transfer gate, the second n-type ion implantation region enclosing the first n-type ion implantation region and having a second width wider than the first width and a second ion implantation depth deeper than the first ion implantation depth and a second depth; forming a p-type ion implantation region between a surface of the semiconductor substrate and the first n-type ion implantation region, the p-type ion implantation region being aligned at one side of the transfer gate and partially overlapped with the first n-type ion implantation region; forming spacers on both sidewalls of the transfer gate; and forming a floating diffusion region at the other side of the transfer gate.10-16-2008
20090166688IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes an interlayer dielectric including metal lines disposed on a semiconductor substrate; first conductive regions formed on a crystalline semiconductor substrate which is bonded to the semiconductor substrate, and connected with the metal lines; second conductive regions formed between the respective first conductive regions; first conductive-type high-density dopant regions adjoining the first conductive regions, being formed on the crystalline semiconductor substrate; and second conductive-type high-density dopant regions adjoining the second conductive regions, being formed between the respective first conductive-type high-density dopant regions.07-02-2009
20080272415Solid-state imaging device - A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.11-06-2008
20080290382SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device including: a substrate; a light-receiving part; a second-conductivity-type isolation layer; a detection transistor; and a reset transistor.11-27-2008
20080290381CAPACITANCE NOISE SHIELDING PLANE FOR IMAGER SENSOR DEVICES - A conductive shield plane electrically isolating the photodiode regions from metal interconnect lines in an imager sensor device.11-27-2008
20080272414Image sensing cell, device, method of operation, and method of manufacture - An image sensing device can include one or more image sensing cells. Each image sensing cell can have a charge store element formed from a semiconductor material doped to a first conductivity type. The charge store element can be in contact with a channel region formed from a semiconductor material doped to a second conductivity type. The charge store element can have one or more surfaces for exposure to an image source. Each image sensing cell can also include a charge electrode formed from a semiconductor material doped to the first conductivity type that is separated from the charge store element by a semiconductor material doped to the second conductivity type. In addition, one or more current detection electrodes can be included in each image sensing cell. A current detection electrode can pass a current flowing through the channel region in a read operation. Such an image sensing cell can be compact in size and/or have a large image sensing area.11-06-2008
20080265295METHODS, STRUCTURES AND SYTEMS FOR AN IMAGE SENSOR DEVICE FOR IMPROVING QUANTUM EFFICIENCY OF RED PIXELS - A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.10-30-2008
20110220976SOLID-STATE IMAGING DEVICE - Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.09-15-2011
20090242948METHOD OF FORMING AN INVERTED LENS IN A SEMICONDUCTOR STRUCTURE - A flat-top convex-bottom lower lens is formed by first applying a positive tone photoresist over a silicon oxide layer and an optional metallic barrier layer thereupon in a back-end-of-line (BEOL) metallization structure. The positive tone photoresist is exposed under defocused illumination conditions and/or employing a half-tone mask so that a cross-sectional profile of the positive tone photoresist after exposure contains a continuous and smooth concave profile, which is transferred into the underlying silicon oxide layer to form a concave cavity therein. After removing the photoresist, the cavity is filled with a high refractive index material such as silicon nitride, and planarized to form a flat-top convex-bottom lower lens. Various aluminum metal structures, a color filter, and a convex-top flat-bottom upper lens are thereafter formed so that the upper lens and the lower lens constitute a composite lens system.10-01-2009
20100187580METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED INFRARED SENSING DEVICE - Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between. In an embodiment, the micro lens array is fabricated on a silicon substrate and bonded to the sensing pixel array substrate. In another embodiment, the micro lens array is fabricated monolithically using amorphous silicon. The micro lens array layer encapsulates the pixel sensing array hermetically, preferably in a vacuum environment.07-29-2010
20100237393SOLID-STATE IMAGE PICK-UP DEVICE AND IMAGING SYSTEM USING THE SAME - The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 09-23-2010
20100252870DUAL SHALLOW TRENCH ISOLATION AND RELATED APPLICATIONS - Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. The depth of each STI structure depends on the need and/or isolation tolerance of devices in each region. In an embodiment, the pixel region uses NMOS devices and the STI in this region is shallower than that of in the periphery region that includes both NMOS and PMOS device having different P- and N-wells and that desire more protective isolation (i.e., deeper STI). Depending on implementations, different numbers of masks (e.g., two, three) are used to generate the dual STI, and are disclosed in various method embodiments.10-07-2010
20110018041Semiconductor Device and Method of Driving the Same - To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed.01-27-2011
20090065819APPARATUS AND METHOD OF MANUFACTURE FOR AN IMAGER STARTING MATERIAL - An imager apparatus and associated starting material are provided. Such starting material includes a first silicon layer and an oxide layer disposed adjacent to the first silicon layer. Further included is a first doped layer disposed adjacent to the oxide layer with a first doping, and a second doped layer disposed adjacent to the first doped layer with, a second doping that is less than the first doping layer.03-12-2009
20110115003SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.05-19-2011
20110241089SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and which is operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof; an electric-charge holding region which has an impurity region of the first conductivity type and in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out; an intermediate transfer path through which only the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined electric charge amount is transferred into the electric-charge holding region; and an impurity layer.10-06-2011
20110210381TRANSISTOR, IMAGE SENSOR WITH THE SAME, AND METHOD OF MANUFACTURING THE SAME - Provided is an image sensor including a drive transistor as a voltage buffer, which can suppress generation of secondary electrons from a channel of the drive transistor to prevent generation of image defects caused by dark current. The transistor includes a gate electrode formed on a substrate, source and drain regions formed in the substrate exposed to both sides of the gate electrode, respectively, and an electric field attenuation region formed on the drain region and partially overlapping the gate electrode.09-01-2011
20110210382DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME - Method of manufacturing imaging arrays can include providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.09-01-2011
20110175150IMAGE PICKUP DEVICE - The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.07-21-2011
20110175151PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.07-21-2011
20090001433Image Sensor and Method for Manufacturing the Same - Provided are an image sensor and a method of fabricating the same. The image sensor includes a substrate having an active area and a device isolation area; a well implantation area in the active area; a threshold voltage implantation area in the well implantation area; and a transistor gate on the threshold voltage implantation area, wherein the threshold voltage implantation has a width greater than a width of the transistor gate.01-01-2009
20080315269PHOTODETECTOR ARRAY USING ISOLATION DIFFUSIONS AS CROSSTALK INHIBITORS BETWEEN ADJACENT PHOTODIODES - A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.12-25-2008
20100320514DIGITAL RADIOGRAPHY IMAGER WITH BURIED INTERCONNECT LAYER IN SILICON-ON-GLASS AND METHOD OF FABRICATING SAME - A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface.12-23-2010
20110073923SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.03-31-2011
20110079832SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a second buried gate electrode formed away from each of the photoelectric conversion element and the first buried gate electrode, a first diffusion layer formed between the first buried gate electrode and the second buried gate electrode, and a second diffusion layer formed between the first buried gate electrode and the second buried gate electrode away from the first diffusion layer so as to overlap the first diffusion layer; wherein electric charges accumulated in the photodiode conversion element are transferred to the second diffusion layer through the first diffusion layer.04-07-2011
20120146115Design Structure, Methods, and Apparatus Involving Photoconductor-on-Active Pixel Devices - A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.06-14-2012
20110127592METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING APPARATUS - A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conductivity type into the semiconductor substrate, forming a lightly doped drain region by performing, after forming a mask pattern including an opening portion narrower than a width of the gate electrode on an upper layer of the gate electrode of the transistor, ion implantation of an impurity of a second conductivity type near the surface of the semiconductor substrate with the mask pattern as a mask, and forming a source region and a drain region of the transistor by performing ion implantation of an impurity of the second conductivity type into the semiconductor substrate after forming the gate electrode of the transistor.06-02-2011
20110260222Image Sensor having Reduced Dark Current - An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region of the substrate. The stress layer pattern is formed over the field effect transistor for creating stress therein to improve transistor performance. The surface passivation material is formed on the first region of the substrate for passivating dangling bonds at the surface of the light receiving device.10-27-2011
20100224918Semiconductor devices and CMOS image sensors having a shielding wall, electronic apparatuses having the same and methods of fabricating the same - Semiconductor devices, CMOS image sensors, electronic apparatuses and methods of fabricating the same are provided, the semiconductor devices include a semiconductor substrate having stopper layers and interlayer insulating layers which are alternately stacked, wherein interfaces between the stopper layers and the interlayer insulating layers are formed in a horizontal direction. A first conductor and a second conductor each vertically extend through the interlayer insulating layers and the stopper layers. An insulating shielding wall is formed between the first and second conductors. The insulating shielding wall vertically extends through the interfaces between the stopper layers and the interlayer insulating layers such that at least one of the interfaces is divided into separate sections.09-09-2010
20110115002BACKSIDE ILLUMINATED IMAGING SENSOR WITH REINFORCED PAD STRUCTURE - A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.05-19-2011
20120153367SEMICONDUCTOR APPARATUS - A power supply wiring and a pad are arranged on a first wiring layer. Then, the power supply wiring and the pad are arranged so as not to be mutually overlapped. Signal wirings are arranged on a second wiring layer. Another signal wiring is arranged on a layer different from the second wiring layer. The other signal wiring is arranged below the pad so as to be overlapped with the pad. The signal wirings and the other signal wiring are mutually connected by a plug. A buffer is arranged between the pad and the other signal wiring.06-21-2012
20090134436SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD AND ELECTRONIC APPARATUS THEREOF - The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.05-28-2009
20110180860Solid-state imaging apparatus, method of manufacturing same, and electronic apparatus - A solid-state imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and pixel transistors, which are formed on a semiconductor substrate; a floating diffusion unit in the pixel; a first-conductivity-type ion implantation area for surface pinning, which is formed over the surface on the side of the photoelectric conversion unit and the surface of the semiconductor substrate; and a second-conductivity-type ion implantation area for forming an overflow path serving as an overflow path for the floating diffusion unit, the second-conductivity-type ion implantation area being formed below the entire area of the first-conductivity-type ion implantation area. An overflow barrier is formed using the second-conductivity-type ion implantation area. A charge storage area is formed using an area in which the second-conductivity-type semiconductor area and the second-conductivity-type ion implantation area superpose each other.07-28-2011
20110180859Semiconductor device, method of manufacturing semiconductor device, and solid-state imaging apparatus - A semiconductor device includes a gate electrode formed on a substrate with a gate insulating layer in between, an insulating layer of property and thickness that allow for a silicide block formed in a first region of the substrate so as to cover the gate electrode, a sidewall formed to at least partly include the insulating layer at a side of the gate electrode, a first impurity region formed by implantation of a first impurity in a peripheral region of the gate electrode formed in the first region of the substrate before the insulating layer is formed, a second impurity region formed by implantation of a second impurity in a peripheral region of the sidewall of the gate electrode formed in a second region of the substrate after the sidewall is formed, and a silicide layer formed on a surface of the second impurity region of the substrate.07-28-2011
20120074474PHOTOTRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME - A phototransistor includes a source electrode and a gate electrode which have the same electric potential, a transparent electrode formed on a surface of an interlayer insulating film so as to be located above a channel region, and a refresh controller for reducing a charge accumulated in a portion of the channel region, the portion facing the transparent electrode, by applying a voltage between the transparent electrode, and the gate electrode and the source electrode.03-29-2012
20100006908BACKSIDE ILLUMINATED IMAGE SENSOR WITH SHALLOW BACKSIDE TRENCH FOR PHOTODIODE ISOLATION - A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.01-14-2010
20120228682FIELD-EFFECT TRANSISTOR, FIELD-EFFECT TRANSISTOR MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - According to the present disclosure, it is possible to further miniaturize the gate electrode of the field-effect transistor. The field-effect transistor includes a substrate; a semiconductor layer configured to be formed on the substrate and have a fin region formed thereon with a source region and a drain region formed at both ends of the fin region; and a gate electrode configured to have a convex portion partially in contact with at least two faces of the fin region.09-13-2012
20120261730FLOATING DIFFUSION STRUCTURE FOR AN IMAGE SENSOR - An image sensor including a pixel array having a floating diffusion region of a pixel which is disposed in a substrate, the floating diffusion region to receive a charge from a photosensitive region. In an embodiment, a transfer gate disposed on the substrate, wherein a portion of the transfer gate forms a cavity extending through the transfer gate. In another embodiment, a cavity extending through a transfer gate exposes a floating diffusion region.10-18-2012
20120299070PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER - Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.11-29-2012
20120267694INTEGRATED CIRCUIT ARRANGEMENTS - An integrated circuit arrangement is provided, including a transistor including a gate region; and a wavelength conversion element, wherein the wavelength conversion element may include the same material or same materials as the gate region of the transistor.10-25-2012
20110260221LASER ANNEAL FOR IMAGE SENSORS - A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.10-27-2011
20120280295IMAGE PICKUP DEVICE - An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.11-08-2012
20130181268PHOTOELECTRIC CONVERSION APPARATUS, IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion section contains a semiconductor element having a laminated structure which contains an electroconductor, a semiconductor, and an insulator provided between the electroconductor and the semiconductor, in which the insulator is a silicon oxide film containing nitrogen in a main portion located between the electroconductor and the semiconductor.07-18-2013
20130099296TRANSISTOR WITH SELF-ALIGNED CHANNEL WIDTH - A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.04-25-2013
20110272750PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along a side surface and a bottom surface of an element isolation region, a reference voltage to the semiconductor region of the second conduction-type arranged below source and drain regions of the amplifying transistor in a region below a gate electrode of the amplifying transistor.11-10-2011
20100276736CMOS IMAGE SENSOR ON STACKED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a CMOS image sensor result in a plurality of photo sensitive layers, each layer including: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including a plurality of semiconductor islands, at least one island operating as a color sensitive photo-detector sensitive to a respective range of light wavelengths, wherein the plurality of photo sensitive layers are stacked one on the other, such that incident light enters the CMOS image sensor through the first spaced-apart surface of the glass or glass ceramic substrate of one of the plurality of photo sensitive layers, and subsequently passes into further photo sensitive layers if one or more wavelengths of the incident light are sufficiently long.11-04-2010
20080197386Semiconductor Device With An Image Sensor And Method For The Manufacture Of Such A Device - The invention relates to a semiconductor device with a semiconductor body (08-21-2008
20110227138Photosensitive Imaging Devices And Associated Methods - Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.09-22-2011
20130153976SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE - Provided is a solid-state imaging apparatus including: a plurality of photoelectric conversion units; an element isolation unit that performs element isolation between the plurality of photoelectric conversion units; and a diffusion prevention unit that prevents diffusion of a dark current component generated on an interfacial surface of the element isolation unit to a region surrounding the dark current component generation region.06-20-2013
20130153977PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device according to one or more embodiments includes a plurality of photoelectric conversion units. A readout portion is configured to output current signals to an output line. Each of the current signals is based on an amount of charges generated by a corresponding one of the photoelectric conversion units. The readout portion includes a plurality of transistors including at least a plurality of first input transistors and a plurality of second input transistors. Each of the first input transistors and a corresponding one of the second input transistor form a differential pair. Of the plurality of the transistors, any transistors repeatedly arranged correspondingly to every one or more of the photoelectric conversion units have the same conductivity type.06-20-2013
20110298023SOLID-STATE IMAGING DEVICE - According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The first photoelectric conversion film covers the surface and the side of the first electrode film. The first conductive film covers the light receiving surface and the side of the first photoelectric conversion film. The dielectric film covers a portion corresponding to the side of the first photoelectric conversion film in the first conductive film. The second photoelectric conversion film covers a main portion of a portion corresponding to the light receiving surface of the first photoelectric conversion film in the first conductive film. The second conductive film covers the light receiving surface and the side of the second photoelectric conversion film.12-08-2011

Patent applications in class Imaging array

Patent applications in all subclasses Imaging array