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Chemical (e.g., ISFET, CHEMFET)

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257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257213000 - FIELD EFFECT DEVICE

257252000 - Responsive to non-optical, non-electrical signal

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DocumentTitleDate
20080258179Hybrid molecular electronic device for switching, memory, and sensor applications, and method of fabricating same - A hybrid molecular electronic device having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor (FET) formed on a silicon-on-insulator (SOI) substrate. Source and drain doped regions are formed in an upper surface of the SOI substrate, and a metallization layer which can serve as a gate contact is formed on a lower surface of the SOI substrate. A channel region spanning between the doped source and drain regions is left exposed, in order that a monolayer of molecules may be formed therein. Upon application of appropriate gating voltages to the gate contact, conduction between the source and drain regions can be modulated, possibly as a result of the reduction and oxidation of the molecules grafted to the gate region.10-23-2008
20110193140Electronic component for high temperatures - A chemically sensitive field effect transistor includes a substrate, a conductor track structure situated on the substrate, and a functional layer which is contacted via the conductor track structure. To be able to form a thin, oxidation-stable and temperature-stable conductor track structure, the conductor track structure is made of a metal mixture which includes platinum and one or more metals selected from the group made up of rhodium, iridium, ruthenium, palladium, osmium, gold, scandium, yttrium, lanthanum, the lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, tungsten, rhenium, iron, cobalt, nickel, copper, boron, aluminum, gallium, indium, silicon, and germanium.08-11-2011
20110193139CELL MEASURING DEVICE - There is provided a cell measuring apparatus that can measure cells efficiently. In a cell measuring apparatus 08-11-2011
20130075794NANO-ELECTRONIC SENSORS FOR CHEMICAL AND BIOLOGICAL ANALYTES, INCLUDING CAPACITANCE AND BIO-MEMBRANE DEVICES - Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors.03-28-2013
20090321792SEPARATIVE EXTENDED GATE FIELD EFFECT TRANSISTOR BASED URIC ACID SENSING DEVICE, SYSTEM AND METHOD FOR FORMING THEREOF - A separative extended gate field effect transistor based uric acid sensing device is provided, including: a substrate; a conductive layer including a silver paste layer on the substrate and a graphite-based paste layer on the silver paste layer; a conductive wire extended from the conductive layer; a titanium dioxide layer on the conductive layer; and a uric acid enzyme sensing film on the titanium dioxide layer.12-31-2009
20100133591METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR - The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.06-03-2010
20120217550GAS SENSOR - A MISFET-type hydrogen gas sensor having low power consumption which can be operated for one year or longer at a low voltage power source (for example, 1.5 to 3 V) is achieved. A sensor FET is formed in a MEMS region 08-30-2012
20130069121ION SENSOR, DISPLAY DEVICE, METHOD FOR DRIVING ION SENSOR, AND METHOD FOR CALCULATING ION CONCENTRATION - The present invention provides an ion sensor with which an ion concentration in a sample in which both ions are mixed can be measured with high accuracy, a display device, a method for driving the ion sensor, and a method for calculating an ion concentration. The present invention is an ion sensor that includes a field effect transistor. The ion sensor detects one of negative ions and positive ions using the field effect transistor, and consecutively thereafter detects the other of the negative ions and positive ions using the field effect transistor.03-21-2013
20130069120PH SENSOR AND MANUFACTURING METHOD - Disclosed is a pH sensor comprising a carrier (03-21-2013
20090008681ALKALOID SENSOR - An alkaloid sensor, systems comprising the same, and measurement using the systems. The alkaloid sensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and an alkaloid acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit.01-08-2009
20110298015SENSING DEVICE - A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.12-08-2011
20120286333LOW NOISE CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.11-15-2012
20120286332CHEMICALLY SENSITIVE SENSORS WITH SAMPLE AND HOLD CAPACITORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.11-15-2012
20110169057Gas Sensor - [Object] To provide a gas sensor having a self-diagnostic function with a simplified structure.07-14-2011
20090152596SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.06-18-2009
20090152598BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.06-18-2009
20090152597BIOSENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.06-18-2009
20090278175METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM - The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.11-12-2009
20090283805BIOSENSOR CONTAINING RUTHENIUM, MEASUREMENT USING THE SAME AND THE APPLICATION THEREOF - A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.11-19-2009
20100090254BIOSENSOR AND MANUFACTURING METHOD THEREOF - Provided is a biosensor which can detect a specific biomaterial by an interaction between target molecules and probe molecules, and a manufacturing method thereof. The biosensor includes: a first conductive semiconductor substrate; a second conductive doping layer formed on the semiconductor substrate; an electrode formed on top of both opposite ends of the doping layer; and probe molecules immobilized on the doping layer.04-15-2010
20100090255Electronic component - An electronic component includes at least one electrode and at least one gas-sensitive region on a substrate. The gas-sensitive region is coated by at least one electrically conductive, gas-sensitive layer, and the electrode contacts the gas-sensitive layer. At least a part of the at least one electrode covers a part of the gas-sensitive region.04-15-2010
20110169056HYDROGEN ION-SENSITIVE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.07-14-2011
20090294805Virtual semiconductor nanowire, and methods of using same - A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.12-03-2009
20110198674GAS-SENSITIVE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING A GAS-SENSITIVE FIELD EFFECT TRANSISTOR - A gas-sensitive field effect transistor is described which includes a semiconductor substrate having a main substrate surface. The semiconductor substrate has a source region, a gate region, and a drain region. The field effect transistor also includes an insulating layer which has a first main surface facing the main substrate surface, and a second main surface facing away from the main substrate surface. The insulating layer at least partially covers the main substrate surface, and in the area of the gate region has an opening or a region having reduced layer thickness having beveled side walls. An area of the opening in the second main surface is larger than an area of the opening in the first main surface. Lastly, the field effect transistor includes a gate electrode layer which covers at least a partial region of the first main surface of the insulating layer, a region of the beveled side walls of the opening, and an area of the gate region. The gate electrode layer includes a material or a structuring which causes a change in the electrical properties of the gate electrode layer upon contact with a predefined gas.08-18-2011
20130214332NANOGRID CHANNEL FIN-FET TRANSISTOR AND BIOSENSOR - A transistor includes a source region, a drain region, and a nanogrid channel connecting the source and drain regions. The nanogrid channel includes first and second vertical channel regions connecting the source and drain regions. The first and second vertical channel regions have a space therebetween. A cross member extends from the first vertical channel region into the space.08-22-2013
20080283875FIELD EFFECT TRANSISTOR, BIOSENSOR PROVIDED WITH IT, AND DETECTING METHOD - A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.11-20-2008
20120032235Backside Stimulated Sensor with Background Current Manipulation - A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.02-09-2012
20080308846DEVICE AND METHOD FOR DETECTING BIOMOLECULES USING ADSORPTIVE MEDIUM AND FIELD EFFECT TRANSISTOR - A device for detecting biomolecules includes: a semiconductor substrate; a source region and a drain region separately provided at the substrate; a chamber formed at the substrate including a region between the source region and the drain region, the chamber configured to contain a sample including the biomolecules; and an electrode which applies a voltage to the sample in the chamber. The biomolecules are mobile with respect to the electrode and sample. Methods for detecting biomolecules are also disclosed.12-18-2008
20130119440BIOSENSORS INTEGRATED WITH A MICROFLUIDIC STRUCTURE - A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.05-16-2013
20100270595Device for Detection of a Gas or Gas Mixture and Method for Manufacturing Such a Device - A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap. The support layer is formed by another semiconductor substrate, and the first gas sensor is integrated in the front side of the second semiconductor substrate facing away from the air gap.10-28-2010
20090127589Methods and apparatus for measuring analytes using large scale FET arrays - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.05-21-2009
20090085072Biosensor using nanoscale material as transistor channel and method of fabricating the same - Example embodiments relate to a biosensor using a nanoscale material as a channel of a transistor and a method of fabricating the same. A biosensor according to example embodiments may include a plurality of insulating films. A first signal line and a second signal line may be interposed between the plurality of insulating films. A semiconductor nanostructure may be disposed on the plurality of insulating films, the semiconductor nanostructure having a first side electrically connected to the first signal line and a second side electrically connected to the second signal line. A plurality of probes may be coupled to the semiconductor nanostructure. A biosensor according to example embodiments may have a reduced analysis time.04-02-2009
20090085071SENSOR DEVICE COMPRISING ELONGATED NANOSTRUCTURES - A sensor device is provided for determining the presence and/or amount of at least one component in a fluid. The sensor device comprises at least one sensor unit, the at least one sensor unit comprising at least one elongated nanostructure and a dielectric material surrounding the at least one elongated nanostructure. The dielectric material is such that it is selectively permeable for one of the at least one component and is capable of sensing the component permeated through the dielectric material. The sensor device according to preferred embodiments shows good sensitivity and good mechanical strength. The present invention furthermore provides a method for manufacturing such a sensor device and a method for determining the presence and/or amount of at least one component in a fluid using such a sensor device.04-02-2009
20100148222GAS SENSOR HAVING A FIELD-EFFECT TRANSISTOR - A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region.06-17-2010
20100276734ELECTROCHEMICAL BIOSENSOR ARRAYS AND SYSTEMS AND METHODS OF MAKING SAME - Electrochemical biosensor arrays and systems, as well as methods of making the electrochemical biosensor arrays and systems, are described herein. The electrochemical biosensor systems can be used with CMOS detection circuits that have a plurality of chemical detection and/or actuation channels or sites. The biosensor systems generally include a first inert conducting electrode disposed on a first portion of a CMOS detection circuit and a polymeric layer adjacent the first inert conducting electrode. The biosensor systems can also include a capture biomolecule bound to the polymeric layer. The biosensor system can also include the CMOS detection and/or actuation circuit having a plurality of channels.11-04-2010
20100224913One-dimensional FET-based corrosion sensor and method of making same - A field effect transistor corrosion sensor (09-09-2010
20120139011ION SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSOR REGION - An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. The adapting or matching layer differs from the intermediate insulator and the substrate oxide in its chemical composition and/or structure. The adapting or matching layer and the ion sensitive, sensor layer each have an electrical conductivity greater than that of the intermediate insulator. There is an electrically conductive connection between the adapting or matching layer and the ion sensitive, sensor layer.06-07-2012
20100230731Circuitry and method - An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s).09-16-2010
20100301398METHODS AND APPARATUS FOR MEASURING ANALYTES - Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.12-02-2010
20110018038ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF - The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer.01-27-2011
20110031537SENSOR ELEMENT OF A GAS SENSOR - A sensor element of a gas sensor for determining gas components in gas mixtures is provided, which includes a field-effect transistor having a source electrode, a drain electrode, and a gate electrode. The gate electrode includes a gate metallization, which is in contact with an insulation layer or a semiconductor substrate of the field-effect transistor via a boundary layer, the boundary layer being formed by modifying the surface of the insulation layer or the semiconductor substrate using metal alkoxides, metal amides, metal halogenides and/or metal alkyls. Furthermore, a method for producing said sensor element is provided.02-10-2011
20110248320METHODS AND APPARATUS FOR MEASURING ANALYTES - Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.10-13-2011
20110248319METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.10-13-2011
20110163353GAS SENSOR - A gas sensor having at least one gas-sensitive electrically conductive layer having a surface region which can be brought into contact with a target gas and in which the work function depends on the concentration of the target gas in contact therewith. At least one electrical potential sensor is capacitively coupled to the surface region via an air gap. The surface region is structured by at least one recess in which a flat material element which is connected to the gas-sensitive layer in an electrically conductive manner is arranged, the material of the material element differing from that of the gas-sensitive layer and comprising a metal and/or a metal-containing chemical compound.07-07-2011
20120199884PH SENSOR, PH MEASUREMENT METHOD, ION SENSOR, AND ION CONCENTRATION MEASUREMENT METHOD - A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode.08-09-2012
20100283087Electric Component - An electric component comprising a sensor and/or actuator chip with a substrate on which a passivating layer and a sensor and/or actuator structure consisting of an active surface area is arranged. The chip is surrounded by an encapsulation having an opening which forms an access to the at least one active surface area. A layer stack is arranged on the substrate, said stack of layers comprising from the passivating layer to the substrate at least one first strip conductor layer, a first electric insulating layer, a second strip conductor layer and a second electric insulating layer. The first conductor strip layer is fully arranged outside the area of the chip covered by the opening. At least one conductor strip of the second conductor strip layer is connected to the sensor and/or actuator structure.11-11-2010
20110108892DETECTOR OF BIOLOGICAL OR CHEMICAL MATERIAL AND CORRESPONDING ARRAY OF DETECTORS - A detector of biological or chemical material, including a MOS transistor having its channel region inserted between upper and lower insulated gates, the upper insulated gate including a detection layer capable of generating a charge at the interface of the upper insulated gate and of its gate insulator, the thickness of the upper gate insulator being smaller than the thickness of the lower gate insulator.05-12-2011
20110133255APPARATUS AND METHOD FOR MOLECULE DETECTION USING NANOPORES - A detector device: a source region (S), a drain region (D) and a gate contact (06-09-2011
20110260219PROTECTIVE LAYERS SUITABLE FOR EXHAUST GASES FOR HIGH-TEMPERATURE CHEMFET EXHAUST GAS SENSORS - In a method for producing a sensor element including at least one sensitive component, a masking layer made of a material which is thermally decomposable without residue is applied to the sensitive component, the sensitive component being essentially covered by the masking layer, a protective layer made of a temperature-stable material is applied to the masking layer, and the masking layer is removed by pyrolysis or a low-temperature-guided oxygen plasma. The resulting sensor element includes at least one sensitive component covered by a protective layer made of a temperature-stable material, the sensitive component and the protective layer being placed at a distance from each other.10-27-2011
20100065892Bio-sensor and method of manufacturing the same - A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.03-18-2010
20110147803Gas Sensor And Flip-Chip Method For Its Manufacture - A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described.06-23-2011
20110147802Sensor - A sensor configured to sense an external event including: a first component having a first impedance that changes when the external event occurs and being connected between a reference voltage node and an output node wherein the output node is configured to provide, when the external event occurs, a feedback signal to the first component that further changes the first impedance and wherein the first component is a field effect transistor comprising: a gate formed from a conductive core of a nanowire and connected to the output node; a gate dielectric formed from an insulating shell of the nanowire; a source/drain electrode connected to the output node; a source/drain electrode connected to the reference node; and a channel extending between the source/drain electrodes.06-23-2011
20130200437METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PATTERN, AND METHOD OF MANUFACTURING THE BIOSENSOR - Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed.08-08-2013
20130200438SYSTEMS AND METHODS FOR SIGNAL AMPLIFICATION WITH A DUAL-GATE BIO FIELD EFFECT TRANSISTOR - The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface.08-08-2013
20100012987Field Effect Transistor Based Sensor - The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.01-21-2010
20120037961Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.02-16-2012
20110316054Method, Apparatus, and System for Micromechanical Gas Chemical Sensing Capacitor - A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.12-29-2011
20120001235CHEMICALLY SENSITIVE SENSOR WITH LIGHTLY DOPED DRAINS - A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.01-05-2012
20120001236ONE-TRANSISTOR PIXEL ARRAY WITH CASCODED COLUMN CIRCUIT - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 01-05-2012
20120001237TWO-TRANSISTOR PIXEL ARRAY - A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device.01-05-2012
20120056248ONE-TRANSISTOR PIXEL ARRAY - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column.03-08-2012
20120061733METHODS AND APPARATUS FOR DETECTING MOLECULAR INTERACTIONS USING FET ARRAYS - Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes.03-15-2012
20120012901Selective Functionalization by Joule Effect Thermal Activation - The invention relates to a method for functionalizing a conductive or semiconductor material (M) by covalent grafting of receptor molecules (R) to its surface, said method comprising the following steps: (i) applying, across the terminals of a source electrode and a drain electrode located on either side of the material (M), sufficient potential difference to thermally activate the material (M) with respect to the grafting reaction of the molecules (R); and (ii) placing the material (M) thus activated in contact with a liquid or gaseous medium containing receptor molecules (R), thereby obtaining a material (M) functionalized by covalently grafted receptor molecules (R).01-19-2012
20120012900SEMICONDUCTOR BIO-SENSORS AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor bio-sensor comprises providing a substrate, forming a first dielectric layer on the substrate, forming a patterned first conductive layer on the first dielectric layer, the patterned first conductive layer including a first portion and a pair of second portions, forming a second dielectric layer, a third dielectric layer and a fourth dielectric layer in sequence over the patterned first conductive layer, forming cavities into the fourth dielectric layer, forming vias through the cavities, exposing the second portions of the patterned first conductive layer, forming a patterned second conductive layer on the fourth dielectric layer, forming a passivation layer on the patterned second conductive layer, forming an opening to expose a portion of the third dielectric layer over the first portion of the patterned first conductive layer, and forming a chamber through the opening.01-19-2012
20120153360METHOD AND DEVICE FOR REGENERATING A HYDROGEN SENSOR - The regeneration method relates to a hydrogen sensor, which comprises a transistor of the MOS type whose gate is covered with a palladium catalyst and which is placed in a low-pressure enclosure. After a leak has been detected, a voltage is imposed on the gate of the transistor by means of an electronic circuit in order to regenerate the catalyst. The electronic circuit comprises a low-frequency DC generator and a switch for changing from the “measurement” mode to the “regeneration” mode, and vice versa.06-21-2012
20120161207CHEMICAL SENSING AND/OR MEASURING DEVICES AND METHODS - Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.06-28-2012
20100207171METHOD FOR SODIUM ION SELECTIVE ELECTRODE, SODIUM ION SELECTIVE ELECTRODE THEREFROM AND SODIUM ION SENSING DEVICE - The invention provides a method for forming a sodium ion selective electrode, including: (a) providing a conductive substrate; (b) forming a conductive wire which extends from the conductive substrate for external contact; and (c) forming a sodium ion sensing film on the conductive substrate, wherein the method for forming the conductive substrate includes: providing a substrate; and forming a conductive layer on the substrate.08-19-2010
20110180856SENSING DEVICE - Provided is a sensing device, which includes a reactive material layer (07-28-2011
20120168826ONE-TRANSISTOR PIXEL ARRAY - To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 07-05-2012
20120223370BIOCHEMICAL SENSOR AND METHOD OF MANUFACTURING THE SAME - A biochemical sensor and a method of manufacturing the same are disclosed. The biochemical sensor includes a substrate, a gate arranged on one side of the substrate, a gate insulating layer arranged on one side of the gate opposite to the substrate, an active layer arranged on one side of the gate insulating layer opposite to the gate, a source and a drain arranged on one side of the active layer opposite to the gate insulating layer, and a biochemical sensing layer arranged on one side of the active layer opposite to the gate insulating layer and between the source and the drain.09-06-2012
20120223371VIRTUAL SEMICONDUCTOR NANOWIRE, AND METHODS OF USING SAME - A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.09-06-2012
20110121368Gas-sensitive semiconductor device - A gas-sensitive semiconductor device having a semiconductive channel (05-26-2011
20120267693Ultrasensitive Biosensors - The present invention is a biosensor apparatus that includes a substrate, a source on one side of the substrate, a drain spaced from the source, a conducting channel between the source and the drain, an insulator region, and receptors on a gate region for receiving target material. The receptors are contacted for changing current flow between the source and the drain. The source and the drain are relatively wide compared to length between the source and the drain through the conducting channel.10-25-2012
20120326213MICROWELL STRUCTURES FOR CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.12-27-2012
20120280286CHEMICALLY-SENSITIVE SAMPLE AND HOLD SENSORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.11-08-2012
20120280284MICRO-FLUIDIC ELECTRONIC DEVICES AND METHOD FOR PRODUCING SUCH DEVICES - A micro-fluidic electronic device includes a micro-fluidic component and an electronic component formed on a sheet of paper. An electrically-active layer of the electronic component, such as a nano-material layer, interacts with a fluid sample deposited within a fluid reservoir of the component, and changes the electronic properties of the electronic component. This can be detected by passing an electrical signal through the electronic component. The micro-fluidic electronic device can be formed straightforwardly and inexpensively by printing or mold-casting.11-08-2012
20120280285CHEMICALLY SENSITIVE SENSORS WITH FEEDBACK CIRCUITS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.11-08-2012
20120091512MICROSYSTEM FOR ANALYZING BLOOD - The present disclosure utilizes the MEMS (Micro Electro Mechanical Systems) process and packaging method to produce a microsystem for analyzing blood which is capable of detecting several kinds of ions. The microsystem for analyzing blood has a miniaturized reference electrode, so size of the microsystem can be greatly reduced. The microsystem further has a gate detecting area larger than a conventional planar ISE or a conventional ISFET does, so interference with signals can be avoided, and packaging difficulty and blood leakage can be reduced. Therefore, the microsystem is thin and small, reacts rapidly, and has a high accuracy, and a high compatibility with IC (integrated circuit) process. In addition, the microsystem has high stability of long-term potential, low offset-potential characteristics, low alternating current impedance, high stability of dynamic reference potential, low electrochemical noises and high reproducibility of the electrode.04-19-2012
20130009214MICROWELL STRUCTURES FOR CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.01-10-2013
20130015505METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.01-17-2013
20130015506METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.01-17-2013
20080237654Device for Detecting a Gas or Gas Mixture - A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.10-02-2008
20130126947SEMICONDUCTOR GAS SENSOR - A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.05-23-2013
20110272747Electronic component - An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.11-10-2011
20080210987Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes - In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J09-04-2008
20130153969STRUCTURE FOR MOSFET SENSOR - A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.06-20-2013
20110241081METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.10-06-2011
20100301399Sensitive field effect transistor apparatus - The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.12-02-2010
20120273846Sensor for Detecting a Component of a Gas Mixture - A sensor for detecting a first component in a gas mixture is disclosed having a gas-sensitive electrode and a catalyst which is arranged on and/or spaced apart from the electrode in a porous carrier ceramic. The catalyst has the effect that a second component in the gas mixture is chemically altered such that the component contributes to no substantial change in the potential of the electrode.11-01-2012
20120273845ELECTRONIC PH SENSOR DIE PACKAGING - A pH sensor is provided. The pH sensor comprises a substrate and an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate. The pH sensor also comprises a protective layer formed over at least a portion of an outer surface of the ISFET die and at least a portion of the substrate. Further, the pH sensor comprises a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part.11-01-2012
20130187200TRANSISTOR-BASED PARTICLE DETECTION SYSTEMS AND METHODS - Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.07-25-2013
20110303953GAS SENSOR AND METHOD FOR MANUFACTURING THE GAS SENSOR - It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed.12-15-2011
20090014757QUANTUM WIRE SENSOR AND METHODS OF FORMING AND USING SAME - A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a quantum wire channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance of the transistor.01-15-2009

Patent applications in class Chemical (e.g., ISFET, CHEMFET)